Method for manufacturing a gallium oxide layer

Abstract

The present invention provides a method for forming a gallium oxide (GaO) layer on a substrate, comprising the steps of forming a first gallium oxide layer and forming a second gallium oxide layer on the first gallium oxide layer, wherein the step of forming one of the first and second gallium oxide layers is performed using atomic layer deposition (ALD), and the step of forming the remaining gallium oxide layer is performed using chemical vapor deposition (CVD).

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a gallium oxide layer.

Background Art

[0002] Oxide semiconductors have the advantage that they have high mobility and can have a large resistance change according to the oxygen content, so that desired physical properties can be easily obtained. In addition, since an oxide constituting an oxide semiconductor layer can be formed at a relatively low temperature in the manufacturing process of an oxide semiconductor, the manufacturing cost is low.

[0003] There can be various methods for depositing an oxide semiconductor. For example, an oxide semiconductor can be deposited using an atomic layer deposition (ALD) method, a chemical vapor deposition (CVD) method, or the like. However, when depositing an oxide semiconductor using a single method in the process of depositing an oxide semiconductor, there are problems that the film quality of the oxide semiconductor is non-uniform or it takes a long time to form the oxide semiconductor.

[0004] Furthermore, for example, when using the atomic layer deposition (ALD) method as a method for depositing an oxide semiconductor, an oxide semiconductor layer can be formed by depositing a source material and a reactant material. Here, after the process of injecting the source material and the process of injecting the reactant material are completed, unnecessary source material or reactant material may remain in the chamber, which can be a factor inhibiting the film quality of the oxide semiconductor.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present invention was devised to overcome the drawbacks of the above-described method for manufacturing a gallium oxide layer, and aims to provide a method for manufacturing a gallium oxide layer that can shorten the time required to deposit the gallium oxide layer while forming a good quality film of the gallium oxide layer. [Means for solving the problem]

[0006] To achieve the above objective, the present invention provides a method for forming a gallium oxide (GaO) layer on a substrate, comprising the steps of forming a first gallium oxide layer and forming a second gallium oxide layer on the first gallium oxide layer, wherein the step of forming either the first or second gallium oxide layer is performed using atomic layer deposition (ALD), and the step of forming the remaining gallium oxide layer is performed using chemical vapor deposition (CVD).

[0007] In this invention, the step of forming the first gallium oxide layer can be performed using atomic layer deposition (ALD), and the step of forming the second gallium oxide layer can be performed using chemical vapor deposition (CVD).

[0008] The present invention includes the step of forming a third gallium oxide layer containing gallium oxide on the second gallium oxide layer, and the step of forming the third gallium oxide layer can be performed using atomic layer deposition (ALD).

[0009] In this invention, the step of forming the first gallium oxide layer can be performed using chemical vapor deposition, and the step of forming the second gallium oxide layer can be performed using atomic layer deposition.

[0010] The present invention includes the step of forming a third gallium oxide layer containing gallium oxide on the second gallium oxide layer, and the step of forming the third gallium oxide layer can be performed by chemical vapor deposition.

[0011] The present invention allows the step of forming the one gallium oxide layer using atomic layer deposition (ALD) to include the steps of injecting a first source material containing gallium, injecting a first purge gas, injecting a first reactant material containing oxygen, and injecting a second purge gas.

[0012] The present invention allows the first source substance to include trimethylgallium (TMGa), and the first reactant substance to include either oxygen (O2) or nitrous oxide (N2O).

[0013] The present invention may further include a step of forming a plasma containing hydrogen (H2) gas or argon (Ar) gas between the step of injecting the first source material and the step of injecting the first reactant material.

[0014] The present invention may further include the step of forming a plasma containing hydrogen (H2) gas or argon (Ar) gas after the step of injecting the first reactant material.

[0015] The present invention makes it possible to form an oxygen-containing plasma during the step of injecting the first reactant material.

[0016] The present invention allows the step of forming the remaining gallium oxide layer using chemical vapor deposition (CVD) to include the steps of injecting a first source material containing gallium and injecting a first reactant material containing oxygen.

[0017] The present invention allows the first source substance to include trimethylgallium (TMGa), and the first reactant substance to include either oxygen (O2) or nitrous oxide (N2O).

[0018] The present invention may further include the steps of injecting the first source material and, after the step of injecting the first reactant material, forming a plasma containing hydrogen (H2) gas or argon (Ar) gas.

[0019] The present invention makes it possible to form an oxygen-containing plasma during the steps of injecting the first source material and injecting the first reactant material. [Effects of the Invention]

[0020] According to the present invention as described above, the following effects are obtained.

[0021] According to the present invention, the first gallium oxide layer is formed by atomic layer deposition (ALD), and the second gallium oxide layer is formed by chemical vapor deposition (CVD). This method improves the film quality of the gallium oxide layer, including the first and second gallium oxide layers, while also increasing the rate at which the gallium oxide layer is formed.

[0022] According to the present invention, the first gallium oxide layer is formed by atomic layer deposition (ALD), the second gallium oxide layer by chemical vapor deposition (CVD), and the third gallium oxide layer by atomic layer deposition (ALD). This method improves the film quality of the gallium oxide layer, including the first to third gallium oxide layers, while also increasing the rate at which the gallium oxide layer is formed.

[0023] According to the present invention, when depositing a first gallium oxide layer using atomic layer deposition (ALD), the generation of impurities by the first source material and the first reactant material can be prevented by adding plasma after injecting the first source material and the first reactant material.

[0024] According to the present invention, when a third gallium oxide layer is deposited using atomic layer deposition (ALD), the generation of impurities by the third source material and the third reactant material can be prevented by adding plasma after the third source material is injected and then adding plasma after the third reactant material is injected. [Brief explanation of the drawing]

[0025] [Figure 1] It is a schematic cross-sectional view of a gallium oxide layer according to an embodiment of the present invention. [Figure 2] It is a schematic cross-sectional view of a gallium oxide layer according to another embodiment of the present invention. [Figure 3] It is a schematic flowchart of a method for manufacturing a gallium oxide layer according to an embodiment of the present invention. [Figure 4] It is a schematic flowchart of a method for manufacturing a gallium oxide layer according to another embodiment of the present invention. [Figure 5] It is a schematic flowchart of a method for manufacturing a gallium oxide layer according to still another embodiment of the present invention. [Figure 6] It is a schematic flowchart of a method for manufacturing a gallium oxide layer according to still another embodiment of the present invention. [Figure 7] It is a schematic cross-sectional view of a gallium oxide layer according to still another embodiment of the present invention. [Figure 8] It is a schematic cross-sectional view of a gallium oxide layer according to still another embodiment of the present invention. [Figure 9] It is a schematic flowchart of a method for manufacturing a gallium oxide layer according to still another embodiment of the present invention. [Figure 10] It is a schematic flowchart of a method for manufacturing a gallium oxide layer according to still another embodiment of the present invention. [Figure 11] It is a schematic flowchart of a method for manufacturing a gallium oxide layer according to still another embodiment of the present invention. [Figure 12] It is a schematic flowchart of a method for manufacturing a gallium oxide layer according to still another embodiment of the present invention. [Figure 13] It is a diagram showing a manufacturing apparatus for a gallium oxide layer according to another embodiment of the present invention.

Mode for Carrying Out the Invention

[0026] The advantages and features of the present invention, and the methods for achieving them, will become clearer by referring to an example described in detail below with accompanying figures. However, the present invention is not limited to the example disclosed below, but can be embodied in a variety of different forms, and the example provided is merely to complete the disclosure of the present invention and to fully inform those skilled in the art of the invention of the present invention of the scope of the invention. The present invention is defined solely by the claims.

[0027] The shapes, sizes, proportions, angles, numbers, etc., disclosed in the diagrams illustrating an example of the present invention are illustrative and not limited to those shown in the diagrams. Throughout the specification, the same component may refer to the same reference numeral. In describing an example of the present invention, if a specific description of the relevant prior art is deemed to unnecessarily obscure the gist of the application, such detailed description will be omitted. Where "includes," "has," "consists of," etc., as used herein, other parts may be added unless "only" is used. When a component is expressed singly, it includes cases where it includes multiple components unless otherwise explicitly stated.

[0028] In interpreting the constituent elements, they shall be interpreted as including a margin of error, even if not explicitly stated otherwise.

[0029] When describing a spatial relationship, for example, when the positional relationship between two parts is described using phrases like "on top," "above," "below," or "next to," one or more other parts may be located between the two parts, unless expressions like "immediately" or "directly" are used.

[0030] When describing temporal relationships, for example, when a temporal sequence is described using phrases like "after," "following," "next," or "before," it can include cases that are not continuous unless "immediately" or "directly" is used.

[0031] While terms such as "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are simply used to distinguish one component from others. Therefore, the first component referred to below may also be the second component within the technical concept of the present invention.

[0032] The features of some examples of the present invention can be combined or linked together in part or as a whole, enabling various technically interconnected and driven configurations, and each embodiment can be implemented independently of others or in association with each other.

[0033] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the figures.

[0034] Figure 1 is a schematic cross-sectional view of a gallium oxide layer according to one embodiment of the present invention.

[0035] As can be seen from Figure 1, the gallium oxide layer according to one embodiment of the present invention comprises a first gallium oxide layer 121 and a second gallium oxide layer 122. Here, the first gallium oxide layer can be formed by atomic layer deposition (ALD), and the second gallium oxide layer can be formed by chemical vapor deposition (CVD).

[0036] The first gallium oxide layer 121 can be formed on the substrate 100. The first gallium oxide layer 121 comprises an oxide semiconductor; for example, the first gallium oxide layer 121 may comprise a GaO-based oxide semiconductor containing gallium.

[0037] The first gallium oxide layer 121 can be formed using atomic layer deposition (ALD). Because the first gallium oxide layer 121 is formed using atomic layer deposition, the film quality of the first gallium oxide layer 121 is excellent.

[0038] On the other hand, the first gallium oxide layer 121 can be formed using Plasma Enhanced Atomic Layer Deposition (PEALD).

[0039] The second gallium oxide layer 122 is formed on the first gallium oxide layer 121.

[0040] The second gallium oxide layer 122 comprises an oxide semiconductor; for example, the second gallium oxide layer 122 may comprise a GaO-based oxide semiconductor containing gallium.

[0041] The gallium oxide layer 122 can be formed using chemical vapor deposition (CVD). When the gallium oxide layer 122 is formed using chemical vapor deposition, it can be formed more rapidly than when atomic layer deposition is used.

[0042] On the other hand, the second gallium oxide layer 122 can also be formed using plasma-enhanced chemical vapor deposition (PECVD).

[0043] Figure 2 is a schematic cross-sectional view of a gallium oxide layer according to another embodiment of the present invention.

[0044] As can be seen from Figure 2, the gallium oxide layer according to another embodiment of the present invention comprises a first gallium oxide layer 121, a second gallium oxide layer 122, and a third gallium oxide layer 123. On the other hand, the gallium oxide layer according to the embodiment in Figure 2 is the same as the gallium oxide layer according to the embodiment in Figure 1, except for the third gallium oxide layer 123, so the following explanation will focus on the differences in configuration.

[0045] The first gallium oxide layer 121 is formed using atomic layer deposition, and the second gallium oxide layer 122 is formed using chemical vapor deposition.

[0046] The third gallium oxide layer 123 is formed on the second gallium oxide layer 122.

[0047] The third gallium oxide layer 123 comprises an oxide semiconductor; for example, the third gallium oxide layer 123 may comprise a GaO-based oxide semiconductor containing gallium.

[0048] The third gallium oxide layer 123 can be formed using atomic layer deposition (ALD). Since the first gallium oxide layer 123 is formed using atomic layer deposition, the film quality of the first gallium oxide layer 123 is excellent.

[0049] On the other hand, the third gallium oxide layer 123 can also be formed using plasma-enhanced atomic layer deposition (PEALD).

[0050] Figure 3 is a schematic flowchart of a method for producing a gallium oxide layer according to one embodiment of the present invention.

[0051] As can be seen from Figure 3, a method for producing a gallium oxide layer according to one embodiment of the present invention comprises the steps of: injecting a first source substance (S110); injecting a first reactant substance (S120); and injecting a second source substance and a second reactant substance (S130).

[0052] Here, the steps of injecting the first source material (S110) and injecting the first reactant material (S120) can be performed using atomic layer deposition (ALD).

[0053] Therefore, the steps of injecting the first source material (S110) and the first reactant material (S120) can be performed in a vacuum chamber. Specifically, a substrate can be placed on a susceptor provided on the lower side of the vacuum chamber, and the first source material and the first reactant material can be injected through a gas nozzle provided on the upper side of the vacuum chamber to form a first gallium oxide layer on the substrate (see 121 in Figures 1 and 2).

[0054] When using atomic layer deposition, the process of spraying a first source material onto a substrate, followed by spraying a first reactant material, can be repeated as a single cycle.

[0055] In the step of injecting the first source material (S110), the first source material may include a material containing gallium (Ga). Here, such material may be a precursor material or a gaseous material.

[0056] Such a gallium (Ga)-containing substance may be, for example, trimethylgallium (TMGa). However, such a gallium (Ga)-containing substance is not limited to this and can vary in various ways according to the common technical knowledge in this field.

[0057] After the step of injecting the first source material (S110) is carried out, the step of injecting the first reactant material (S120) can be carried out.

[0058] If the first source material contains a gallium (Ga)-containing substance, the first reactant material may contain either oxygen (O2) or nitrous oxide (N2O), in which case gallium oxide (GaO) is obtained as the first gallium oxide layer (see 121 in Figures 1 and 2).

[0059] When proceeding to the step of injecting the first reactant material (S120), the first reactant material can be injected with or without forming a plasma.

[0060] Here, if plasma is not formed in the step of injecting the first reactant material (S120), the first gallium oxide layer is formed using atomic layer deposition (ALD), and if plasma is formed in the step of injecting the first reactant material (S120), the first gallium oxide layer can be formed using plasma-enhanced atomic layer deposition (PEALD).

[0061] If the step of injecting the first reactant material (S120) uses plasma-enhanced atomic layer deposition, the plasma may contain oxygen (O2).

[0062] The first gallium oxide layer is formed by atomic layer deposition (ALD or PEALD), and the film quality can be excellent.

[0063] After the step of injecting the first reactant material (S120) is carried out, the step of injecting the second source material and the second reactant material (S130) can be carried out.

[0064] The step of injecting the second source material and the second reactant material (S130) can utilize chemical vapor deposition (CVD). Here, in a chamber where the first gallium oxide layer has been formed through the steps of injecting the first source material (S110) and the first reactant material (S120), the second source material and the second reactant material are simultaneously injected onto the first gallium oxide layer (see 121 in Figures 1 and 2) via a gas injection port, thereby forming a second gallium oxide layer (see 122 in Figures 1 and 2) on the first gallium oxide layer (see 121 in Figures 1 and 2) by chemical vapor deposition.

[0065] The second source substance may be a substance containing gallium (Ga). Here, the second source substance may include, for example, trimethylgallium (TMGa).

[0066] The second reactant substance may contain either oxygen (O2) or nitrous oxide (N2O).

[0067] When the second source material contains a gallium (Ga)-containing substance and the second reactant material contains either oxygen (O2) or nitrous oxide (N2O), gallium oxide (GaO) is obtained as the second gallium oxide layer (see 121 in Figures 1 and 2).

[0068] When proceeding with the step of injecting the second source material and the second reactant material (S130), the second source material and the second reactant material can be injected with or without forming a plasma.

[0069] Here, if plasma is not formed in the step of injecting the second source material and the second reactant material (S130), the second gallium oxide layer (see 121 in Figures 1 and 2) is formed using chemical vapor deposition (CVD). If plasma is formed in the step of injecting the second source material and the second reactant material (S130), the second gallium oxide layer (see 121 in Figures 1 and 2) can be formed using plasma-enhanced chemical vapor deposition (PECVD). Here, the plasma may contain oxygen (O2).

[0070] The gallium oxide second layer (see 121 in Figures 1 and 2) is formed by chemical vapor deposition (CVD or PECVD), which can shorten the deposition time.

[0071] Although not shown in the diagram, a step of injecting purge gas can be added between each step (S110, S120, S130). For example, a step of injecting purge gas can be added between the step of injecting the first source material (S110) and the step of injecting the first reactant material (S120), and a step of injecting purge gas can be added between the step of injecting the first reactant material (S120) and the step of injecting the second source material and the second reactant material (S130).

[0072] Figure 4 is a schematic flowchart of the method for producing a gallium oxide layer according to the present invention and other embodiments.

[0073] As can be seen from Figure 4, another embodiment of the present invention provides a method for producing a gallium oxide layer, comprising the steps of: injecting a first source substance (S110), injecting a first reactant substance (S120), injecting a second source substance and a second reactant substance (S130), injecting a third source substance (S140), and injecting a third reactant substance (S150). Here, the method for producing a gallium oxide layer according to Figure 4 is the same as the method for producing a gallium oxide layer according to Figure 3, except for the steps of injecting a third source substance (S140) and injecting a third reactant substance (S150). Therefore, the following explanation will focus on the differences in configuration.

[0074] The steps of injecting the third source material (S140) and injecting the third reactant material (S150) can be performed using atomic layer deposition (ALD).

[0075] Therefore, the steps of injecting the third source material (S140) and the third reactant material (S150) can be performed in a vacuum chamber. Specifically, a substrate with a first gallium oxide layer and a second gallium oxide layer formed thereon is placed on a susceptor provided on the lower side of the vacuum chamber, and the third source material and the third reactant material are injected through a gas injection port provided on the upper side of the vacuum chamber to form a third gallium oxide layer on the second gallium oxide layer (see 123 in Figure 2).

[0076] When using atomic layer deposition, the process of spraying a third source material onto a substrate, followed by spraying a third reactant material, can be repeated in a single cycle.

[0077] The step of injecting the third source material (S140) can proceed after the step of injecting the second source material and the second reactant material (S130).

[0078] In the step of injecting the third source material (S140), the third source material may include a material containing gallium (Ga). In this case, such material may be a precursor material or a gaseous material.

[0079] Such a gallium (Ga)-containing substance may be, for example, trimethylgallium (TMGa). However, such a gallium (Ga)-containing substance is not limited to this and can vary in various ways depending on the common technical knowledge in this field.

[0080] After the step of injecting the third source material (S140) is carried out, the step of injecting the third reactant material (S150) can be carried out.

[0081] If the third source material contains a gallium (Ga)-containing substance, the third reactant material may contain either oxygen (O2) or nitrous oxide (N2O), in which case gallium oxide (GaO) is obtained as the third gallium oxide layer (see 123 in Figure 2).

[0082] When the step of injecting the third reactant material (S150) is carried out, the third reactant material can be injected with or without forming a plasma.

[0083] Here, if plasma is not formed in the step of injecting the third reactant material (S150), the third gallium oxide layer (see 123 in Figure 2) can be formed using atomic layer deposition (ALD), and if plasma is formed in the step of injecting the third reactant material (S150), the third gallium oxide layer (see 123 in Figure 2) can be formed using plasma-enhanced atomic layer deposition (PEALD).

[0084] If the step of injecting the third reactant material (S150) uses plasma-enhanced atomic layer deposition, the plasma may contain oxygen (O2).

[0085] The third gallium oxide layer (see 123 in Figure 2) is formed by atomic layer deposition (ALD or PEALD), and the film quality can be excellent.

[0086] Although not shown in the diagram, a step of injecting purge gas can be added between each step (S110, S120, S130, S140, S150). For example, a step of injecting purge gas can be added between the step of injecting the first source material (S110) and the step of injecting the first reactant material (S120), a step of injecting purge gas can be added between the step of injecting the first reactant material (S120) and the step of injecting the second source material and the second reactant material (S130), a step of injecting purge gas can be added between the step of injecting the second source material and the second reactant material (S130) and the step of injecting the third source material (S140), and a step of injecting purge gas can be added between the step of injecting the third source material (S140) and the step of injecting the third reactant material (S150).

[0087] Figure 5 is a schematic flowchart of the method for producing a gallium oxide layer according to the present invention and other embodiments.

[0088] As can be seen from Figure 5, another embodiment of the present invention provides a method for manufacturing a gallium oxide layer, comprising the steps of: injecting a first source material (S110); adding a plasma containing hydrogen gas or argon gas (S115); injecting a first reactant material (S120); adding a plasma containing hydrogen gas or argon gas (S125); and injecting a second source material and a second reactant material (S130). Here, the method for manufacturing a gallium oxide layer according to Figure 5 is the same as the method for manufacturing a gallium oxide layer according to Figure 3, except for the steps of adding a plasma containing hydrogen gas or argon gas (S115, S125). Therefore, the following explanation will focus on the differences in configuration.

[0089] The step of adding a plasma containing hydrogen gas or argon gas (S115, S125) may proceed after the step of injecting the first source material (S110) or after the step of injecting the first reactant material (S120).

[0090] In the step of adding a plasma containing hydrogen gas or argon gas (S115, S125), a plasma containing hydrogen gas (H2) or argon (Ar) gas can be added to the chamber. Specifically, the step of injecting a first source material (S110) can be carried out, and a plasma containing hydrogen gas or argon gas can be added to the substrate on which the first source material has been adsorbed. In this case, impurities that remain on the substrate without being adsorbed can be removed.

[0091] Alternatively, the process of injecting a first reactant material (S125) can be carried out, and a plasma containing hydrogen gas or argon gas can be applied to the substrate on which the first source material and the first reactant material have reacted to form a first gallium oxide layer. In this case, impurities that remain on the substrate without reacting can be removed.

[0092] Therefore, when the steps of injecting the first source material (S110) and injecting the first reactant material (S120) are carried out using atomic layer deposition, the amount of impurities on or inside the first gallium oxide layer formed can be minimized.

[0093] Although not shown in the diagram, the process may further include adding a plasma containing hydrogen gas or argon gas after the step of injecting the second source material and the second reactant material (S130).

[0094] Although not shown in the diagram, a step of injecting purge gas can be added between each step (S110, S115, S120, S125, S130).

[0095] Figure 6 is a schematic flowchart of the method for producing a gallium oxide layer according to the present invention and other embodiments.

[0096] As can be seen from Figure 6, a method for producing a gallium oxide layer according to yet another embodiment of the present invention comprises the steps of: injecting a first source material (S110); adding a plasma containing hydrogen gas or argon gas (S115); injecting a first reactant material (S120); adding a plasma containing hydrogen gas or argon gas (S125); injecting a second source material and a second reactant material (S130); injecting a third source material (S140); adding a plasma containing hydrogen gas or argon gas (S145); injecting a third reactant material; and adding a plasma containing hydrogen gas or argon gas (S155).

[0097] Here, the gallium oxide layer manufacturing method shown in Figure 6 is the same as the gallium oxide layer manufacturing method shown in Figure 5, except for the step of injecting the third source material (S140) or the step of adding plasma containing hydrogen gas or argon gas (S155). Therefore, the following explanation will focus on the differences in configuration.

[0098] The steps of injecting the third source material (S140) and the third reactant material (S150) are the same as those shown in Figure 4. Therefore, atomic layer deposition can be used for the steps of injecting the third source material (S140) and the third reactant material (S150), and a third gallium oxide layer can be formed there.

[0099] The step of adding a plasma containing hydrogen gas or argon gas (S145, S155) may proceed after the step of injecting the third source material (S140) or after the step of injecting the third reactant material (S150).

[0100] In the step of adding a plasma containing hydrogen gas or argon gas (S145, S155), a plasma containing hydrogen gas (H2) or argon (Ar) gas can be added to the chamber. Specifically, the step of injecting a third source material (S140) can be carried out, and a plasma containing hydrogen gas or argon gas can be added onto the gallium oxide layer on which the third source material has been adsorbed. In this case, impurities that remain on the substrate without being adsorbed can be removed.

[0101] Alternatively, the process of injecting a third reactant material (S155) can be carried out, and a plasma containing hydrogen gas or argon gas can be applied to the substrate on which a third gallium oxide layer has been formed by the reaction of the third source material and the third reactant material. In this case, impurities that remain on the substrate without reacting can be removed.

[0102] Therefore, when the steps of injecting the third source material (S140) and injecting the third reactant material (S150) are carried out using atomic layer deposition, the amount of impurities on the surface or inside the third gallium oxide layer formed can be minimized.

[0103] Although not shown in the diagram, the process may further include adding a plasma containing hydrogen gas or argon gas between the step of injecting the second source material and the second reactant material (S130) and the step of injecting the third source material (S140).

[0104] Although not shown in the diagram, a step of injecting purge gas can be added between each step (S110, S115, S120, S125, S130, S140, S145, S150, S155).

[0105] Figure 7 is a schematic cross-sectional view of a gallium oxide layer according to the present invention and other embodiments.

[0106] As can be seen from Figure 7, the gallium oxide layer according to yet another embodiment of the present invention comprises a first gallium oxide layer 221 and a second gallium oxide layer 222. Here, the first gallium oxide layer can be formed by chemical vapor deposition (CVD), and the second gallium oxide layer can be formed by atomic layer deposition (ALD).

[0107] The first gallium oxide layer 221 comprises an oxide semiconductor; for example, the first gallium oxide layer 221 may comprise a GaO-based oxide semiconductor containing gallium.

[0108] The first gallium oxide layer 221 can be formed on the substrate 200. The first gallium oxide layer 221 can be formed using chemical vapor deposition (CVD). When the first gallium oxide layer 221 is formed using chemical vapor deposition, it can be formed more quickly than when atomic layer deposition is used.

[0109] On the other hand, the first gallium oxide layer 221 can be formed using plasma-enhanced chemical vapor deposition (PECVD).

[0110] The second gallium oxide layer 222 is formed on the first gallium oxide layer 221.

[0111] The second gallium oxide layer 222 comprises an oxide semiconductor; for example, the second gallium oxide layer 222 may comprise a GaO-based oxide semiconductor containing gallium.

[0112] The gallium oxide layer 222 can be formed using atomic layer deposition (ALD). Because the gallium oxide layer 222 is formed using atomic layer deposition, the film quality of the gallium oxide layer 222 is excellent.

[0113] On the other hand, the second gallium oxide layer 222 can also be formed using plasma-enhanced atomic layer deposition (PEALD).

[0114] Figure 8 is a schematic cross-sectional view of a gallium oxide layer according to the present invention and other embodiments.

[0115] As can be seen from Figure 8, the gallium oxide layer according to another embodiment of the present invention comprises a first gallium oxide layer 221, a second gallium oxide layer 222, and a third gallium oxide layer 223. On the other hand, the gallium oxide layer according to the embodiment in Figure 8 is the same as the gallium oxide layer according to the embodiment in Figure 7, except for the third gallium oxide layer 223, so the following explanation will focus on the differences in configuration.

[0116] The first gallium oxide layer 221 is formed using chemical vapor deposition, and the second gallium oxide layer 222 is formed using atomic layer deposition.

[0117] The third gallium oxide layer 223 is formed on the second gallium oxide layer 222.

[0118] The third gallium oxide layer 223 comprises an oxide semiconductor; for example, the third gallium oxide layer 223 may comprise a GaO-based oxide semiconductor containing gallium.

[0119] The gallium trioxide layer 223 can be formed using chemical vapor deposition (CVD). When the gallium trioxide layer 223 is formed using chemical vapor deposition, it can be formed more rapidly compared to when atomic layer deposition is used.

[0120] On the other hand, the third gallium oxide layer 223 can also be formed using plasma-enhanced atomic layer deposition (PEALD).

[0121] Figure 9 is a schematic flowchart of the method for producing a gallium oxide layer according to the present invention and other embodiments.

[0122] As can be seen from Figure 9, a method for producing a gallium oxide layer according to one embodiment of the present invention comprises the steps of injecting a first source substance and a first reactant substance (S210), injecting a second source substance (S220), and injecting a second reactant substance (S230).

[0123] The step of injecting the first source material and the second reactant material (S210) can be performed by chemical vapor deposition (CVD). The step of injecting the first source material and the first reactant material (S210) can be performed in a vacuum chamber. Specifically, a substrate is placed on a susceptor provided on the lower side of the vacuum chamber, and the first source material and the first reactant material are simultaneously injected onto the substrate through a gas injection port provided on the upper side of the vacuum chamber, thereby forming a first gallium oxide layer on the substrate by chemical vapor deposition (see 221 in Figures 7 and 8).

[0124] The first source substance may be a substance containing gallium (Ga). Here, the first source substance may include, for example, trimethylgallium (TMGa).

[0125] The first reactant substance may contain either oxygen (O2) or nitrous oxide (N2O).

[0126] When the first source material contains a gallium (Ga)-containing substance and the first reactant material contains either oxygen (O2) or nitrous oxide (N2O), gallium oxide (GaO) is obtained as the first gallium oxide layer (see 221 in Figures 7 and 8).

[0127] When step S210, which involves injecting the first source material and the first reactant material, is carried out, the first source material and the first reactant material can be injected with or without forming a plasma.

[0128] Here, if plasma is not formed in the step of injecting the first source material and the first reactant material (S210), the first gallium oxide layer (see 221 in Figures 7 and 8) is formed using chemical vapor deposition (CVD). If plasma is formed in the step of injecting the first source material and the first reactant material (S210), the first gallium oxide layer (see 221 in Figures 7 and 8) can be formed using plasma-enhanced chemical vapor deposition (PECVD). Here, the plasma may contain oxygen (O2).

[0129] The first gallium oxide layer (see 221 in Figures 7 and 8) is formed by chemical vapor deposition, which can shorten the deposition time.

[0130] After the step of injecting the first source material and the first reactant material (S210) has been carried out, the step of injecting the second source material (S220) and the step of injecting the second reactant material (S230) can be carried out.

[0131] The steps of injecting the second source material (S220) and injecting the second reactant material (S230) can be performed using atomic layer deposition (ALD).

[0132] In a chamber where a first gallium oxide layer has been formed through a step of injecting a first source material and a first reactant material (S210), a second gallium oxide layer (see 222 in Figures 7 and 8) can be formed on the first gallium oxide layer (see 221 in Figures 7 and 8) by atomic layer deposition by injecting a second source material and a second reactant material onto the first gallium oxide layer (see 222 in Figures 7 and 8) through a gas injection port.

[0133] When using atomic layer deposition, the process of injecting a second source material onto a first gallium oxide layer (see 221 in Figures 7 and 8), followed by injecting a second reactant material, can be repeated as one cycle.

[0134] In the step of injecting the second source material (S210), the second source material may include a material containing gallium (Ga). Here, such material may be a precursor material or a gaseous material.

[0135] Such a gallium (Ga)-containing substance may be, for example, trimethylgallium (TMGa). However, such a gallium (Ga)-containing substance is not limited to this and can vary in various ways depending on the common technical knowledge in this field.

[0136] After the step of injecting the second source material (S220) is carried out, the step of injecting the second reactant material (S230) can be carried out.

[0137] If the second source material contains a gallium (Ga)-containing substance, the second reactant material may contain either oxygen (O2) or nitrous oxide (N2O), in which case gallium oxide (GaO) is obtained as the second gallium oxide layer (see 222 in Figures 7 and 8).

[0138] When the step of injecting the second reactant material (S230) is carried out, the second reactant material can be injected with or without forming a plasma.

[0139] Here, if plasma is not formed in the step of injecting the second reactant material (S230), the second gallium oxide layer (see 222 in Figures 7 and 8) is formed using atomic layer deposition (ALD), and if plasma is formed in the step of injecting the second reactant material (S230), the second gallium oxide layer can be formed using plasma-enhanced atomic layer deposition (PEALD).

[0140] If the step of injecting the second reactant material (S230) uses plasma-enhanced atomic layer deposition, the plasma may contain oxygen (O2).

[0141] The second gallium oxide layer (see 222 in Figures 7 and 8) is formed by atomic layer deposition (ALD or PEALD), which can result in superior film quality.

[0142] Although not shown in the diagram, a step of injecting purge gas can be added between each step (S210, S220, S230).

[0143] Figure 10 is a schematic flowchart of the method for producing a gallium oxide layer according to the present invention and other embodiments.

[0144] As can be seen from Figure 10, another embodiment of the present invention provides a method for producing a gallium oxide layer, comprising the steps of: injecting a first source substance and a first reactant substance (S210); injecting a second source substance (S220); injecting a second reactant substance (S230); and injecting a third source substance and a third reactant substance (S240). Here, the method for producing a gallium oxide layer according to Figure 10 is the same as the method for producing a gallium oxide layer according to Figure 9, except for the step of injecting a third source substance and a third reactant substance (S240). Therefore, the following explanation will focus on the differences in configuration.

[0145] The step of injecting the third source material and the third reactant material (S240) can be performed using chemical vapor deposition (CVD).

[0146] Therefore, the step of injecting the third source material and the third reactant material (S240) can be performed in a vacuum chamber. Specifically, a substrate with a first gallium oxide layer and a second gallium oxide layer formed thereon is placed on a susceptor provided on the lower side of the vacuum chamber, and the third source material and the third reactant material are simultaneously injected through a gas injection port provided on the upper side of the vacuum chamber to form a third gallium oxide layer on the second gallium oxide layer (see 223 in Figure 8).

[0147] The step of injecting the third source material and the third reactant material (S240) can proceed after the step of injecting the second reactant material (S230).

[0148] The third source substance may be a substance containing gallium (Ga). Here, the third source substance may include, for example, trimethylgallium (TMGa).

[0149] The third reactant substance may contain either oxygen (O2) or nitrous oxide (N2O).

[0150] When the third source material contains a gallium (Ga)-containing substance and the third reactant material contains either oxygen (O2) or nitrous oxide (N2O), gallium oxide (GaO) is obtained as the third gallium oxide layer.

[0151] In the step of injecting the third source material and the third reactant material (S240), the third source material and the third reactant material can be injected with or without forming a plasma.

[0152] Here, if plasma is not formed in the step of injecting the third source material and the third reactant material (S240), the third gallium oxide layer (see 223 in Figure 8) can be formed using chemical vapor deposition (CVD). If plasma is formed in the step of injecting the third source material and the third reactant material (S240), the third gallium oxide layer (see 223 in Figure 8) can be formed using plasma-enhanced chemical vapor deposition (PECVD). Here, the plasma may contain oxygen (O2).

[0153] The third gallium oxide layer (see 223 in Figure 8) is formed by chemical vapor deposition (CVD or PECVD), which can shorten the deposition time.

[0154] Although not shown in the diagram, a step of injecting purge gas can be added between each step (S210, S220, S230, S240).

[0155] Figure 11 is a schematic flowchart of the method for producing a gallium oxide layer according to the present invention and other embodiments.

[0156] As can be seen from Figure 11, another embodiment of the present invention provides a method for producing a gallium oxide layer, comprising the steps of: injecting a first source material and a first reactant material (S210); adding a plasma containing hydrogen gas or argon gas (S215); injecting a second source material (S220); and injecting a second reactant material (S230). Here, the method for producing a gallium oxide layer according to Figure 11 is the same as the method for producing a gallium oxide layer according to Figure 9, except for the step of adding a plasma containing hydrogen gas or argon gas (S215). Therefore, the following explanation will focus on the differences in configuration.

[0157] The step of adding a plasma containing hydrogen gas or argon gas (S215) can be carried out after the step of injecting the first source material and the first reactant material (S210).

[0158] In the step of adding a plasma containing hydrogen gas or argon gas (S215), a plasma containing hydrogen gas (H2) or argon (Ar) gas can be added to the chamber. Specifically, the step of injecting a first source material and a first reactant material (S210) can be carried out, and a plasma containing hydrogen gas or argon gas can be added to the substrate on which a first gallium oxide layer has been formed by the reaction of the first source material and the first reactant material. In this case, impurities that remain on the substrate without reacting can be removed.

[0159] Therefore, the amount of impurities on or inside the surface of the first gallium oxide layer formed through the step of injecting the first source material and the first reactant material (S210) can be minimized.

[0160] Although not shown in the diagram, the process may further include adding a plasma containing hydrogen gas or argon gas between the step of injecting the second source material (S220) and the step of injecting the second reactant material (S230). Furthermore, the process may further include adding a plasma containing hydrogen gas or argon gas after the step of injecting the second reactant material (S230).

[0161] Although not shown in the diagram, a step of injecting purge gas can be added between each step (S210, S215, S220, S230).

[0162] Figure 12 is a schematic flowchart of the method for producing a gallium oxide layer according to the present invention and other embodiments.

[0163] As can be seen from Figure 12, another embodiment of the present invention provides a method for producing a gallium oxide layer, comprising the steps of: injecting a first source material and a first reactant material (S210); adding a plasma containing hydrogen gas or argon gas (S215); injecting a second source material (S220); injecting a second reactant material (S230); injecting a third source material and a third reactant material (S240); and adding a plasma containing hydrogen gas or argon gas (S245).

[0164] Here, the gallium oxide layer manufacturing method shown in Figure 12 is the same as the gallium oxide layer manufacturing method shown in Figure 11, except for the step of injecting the third source material (S240) and the step of adding plasma containing hydrogen gas or argon gas (S245). Therefore, the following explanation will focus on the differences in configuration.

[0165] The step of injecting the third source material and the third reactant material (S240) is the same as the step of injecting the third source material and the third reactant material shown in Figure 10. Therefore, the step of injecting the third source material and the third reactant material (S240) can be performed using chemical vapor deposition, and a third gallium oxide layer can be formed here.

[0166] The step of adding a plasma containing hydrogen gas or argon gas (S245) can be carried out after the step of injecting the third source material and the third reactant material (S240).

[0167] In the step of adding a plasma containing hydrogen gas or argon gas (S245), a plasma containing hydrogen gas (H2) or argon (Ar) gas can be added to the chamber. Specifically, after proceeding with the step of injecting the third source material and the third reactant material (S240), a plasma containing hydrogen gas or argon gas can be added to the formed third gallium oxide layer.

[0168] Adding a plasma containing hydrogen gas or argon gas can remove impurities generated after the step of injecting the third source material and the third reactant material (S240). Therefore, the amount of impurities on the surface or inside the third gallium oxide layer formed when the steps of injecting the third source material and the third reactant material (S240) and the step of injecting the third reactant material (S150) are carried out using chemical vapor deposition can be minimized.

[0169] Although not shown in the diagram, the process may further include adding a plasma containing hydrogen gas or argon gas between the step of injecting the second source material (S220) and the step of injecting the second reactant material (S230). Furthermore, the process may further include adding a plasma containing hydrogen gas or argon gas between the step of injecting the second reactant material (S230) and the step of injecting the third source material and the third reactant material (S240).

[0170] Although not shown in the diagram, a step of injecting purge gas can be added between each step (S210, S215, S220, S230, S240, S250).

[0171] Figure 13 shows a gallium oxide layer manufacturing apparatus according to another embodiment of the present invention.

[0172] Referring to Figure 13, the gallium oxide layer manufacturing apparatus according to an embodiment of the present invention is an apparatus for depositing a gallium oxide layer and comprises an upper dome 352 and a lower dome 358. Process gases, i.e., source material and reactant material, are injected into the upper dome 352, and the process gases, i.e., source material and reactant material, can be exhausted from the upper dome 352. The source material and reactant material can be injected via a gas injection unit. The gas injection unit comprises one or more injectors, and the process gas can be injected into the process space by one or more injectors. A stepped space can be located below the upper dome 352. By supplying purge gas to the lower dome 358 and process gas to the upper dome 352, it is possible to prevent the process gas from flowing into the lower dome 358 and suppress the deposition of abnormal layers on the lower dome 358. Furthermore, a uniform plasma can be formed, and a uniform layer can be formed without rotating the substrate 374.

[0173] Furthermore, the gallium oxide (GaO) in this process can also be formed using a plasma-enhanced ALD (PEALD) apparatus employing an inductively coupled plasma source.

[0174] The gallium oxide layer manufacturing apparatus, comprising an upper dome 352 and a lower dome 358, is equipped with liners 354 and 356 to prevent the deposition of unwanted layers on the inner wall of the chamber 360. The liners 354 and 356 can be periodically replaced or cleaned.

[0175] The lamp heater 366, located at the bottom of the lower dome 358, is a ring-shaped lamp heater and multiple units can be provided. Multiple lamp heaters 366 can independently control their power to uniformly heat the substrate 374.

[0176] The high-vacuum pump 390, consisting of a turbomolecular pump (TMP) connected to the exhaust section of the chamber 360, maintains a base vacuum inside the chamber 360, thereby enabling the formation of a stable plasma at a pressure of a few Torr or less during the process.

[0177] The gallium oxide layer manufacturing apparatus of the present invention reduces the performance degradation caused by infrared heating of the antenna 310 that forms the inductively coupled plasma, which is located above the upper dome 352, while providing infrared rays reflected by the electromagnetic shielding housing 330 back to the substrate 374, thereby enabling the formation of a uniform layer on the substrate 374 at high speed.

[0178] Referring to Figure 13, a gallium oxide layer manufacturing apparatus 300 according to one embodiment of the present invention includes a chamber 360 having side walls, a substrate support portion 372 provided inside the chamber for supporting a substrate, an upper dome 352 covering the upper surface of the chamber 360 and formed of a transparent dielectric material, an antenna 310 positioned above the upper dome 352 to form an inductively coupled plasma, and an electromagnetic shielding housing 330 positioned to enclose the antenna 310. The electromagnetic shielding housing 330 can be heated by a heater.

[0179] Antenna 310 includes two one-turn unit antennas, which can be connected in parallel to RF power supply 340.

[0180] The plasma generated in the step of generating hydrogen plasma after the step of injecting the reactant material, and the plasma generated in the step of generating plasma between the source material injection step and the reactant material injection step, can be formed by antenna 310.

[0181] The source material and reactant material can be injected by an injector (not shown) into the process space within the upper dome 352 and the lower dome 358. The source material and reactant material can be injected by the injector in the direction of the upper dome 352 or horizontally into the chamber 360.

[0182] Chamber 360 is formed of a conductive material, its internal space is cylindrical, and its external shape may be a rectangular parallelepiped. Chamber 360 can be cooled by cooling water. Chamber 360, upper dome 352, and lower dome 358 are joined together to provide a sealed space.

[0183] A substrate inlet / outlet 360a is provided on one side of the chamber 360, and an exhaust port 360b may be provided on the other side of the chamber 360 opposite the substrate inlet / outlet 360a. The exhaust port 360b can be connected to a high vacuum pump 390. The high vacuum pump 390 may be a turbomolecular pump. The high vacuum pump 390 maintains a low base pressure and can maintain a pressure of a few tolls or less even during process operation. The upper surface of the exhaust port 360b may be the same as or lower than the upper surface of the substrate inlet / outlet 360a.

[0184] The upper dome 352 is a transparent dielectric and can be made of quartz, sapphire, or ceramic. The upper dome 352 can be made of ceramic material. Ceramic material has better corrosion resistance and corrosion resistance than quartz.

[0185] The upper dome 352 can be inserted into a jaw formed on the upper surface of the chamber 360 and coupled to the chamber 360. The coupling portion of the upper dome 352 that connects to the chamber 360 for vacuum sealing may be washer-shaped. The upper dome 352 may be arc-shaped or elliptical. The upper dome 352 can transmit infrared radiation incident from below.

[0186] Infrared rays reflected by the electromagnetic shielding housing 330 can pass through the upper dome 352 and enter the substrate 374.

[0187] The lower dome 358 can be made of a transparent dielectric material such as quartz or sapphire. The lower dome 358 may include a washer-shaped coupling portion that connects to a jaw formed on the lower surface of the chamber 360, a funnel-shaped lower dome body extending below the coupling portion, and a cylindrical pipe extending downward from the center of the lower dome body. The lower dome 358 can be inserted into the jaw formed on the lower surface of the chamber 360 and coupled to the chamber 360. The coupling portion of the lower dome 358 that connects to the chamber 360 for vacuum sealing may be washer-shaped.

[0188] The drive shafts of the first lifter 384 and the second lifter 382 can be inserted and positioned within the cylindrical pipe of the lower dome 358. The purge gas supplied through the lower dome 358 can be supplied through a flow path, which may be the cylindrical pipe of the lower dome 358. The purge gas may be an inert gas such as argon.

[0189] The upper liner 354 can be made of a transparent dielectric material. For example, the upper liner 354 can be made of quartz, alumina, sapphire, or aluminum nitride. The upper liner 354 can be made of a material that suppresses the deposition of abnormal layers.

[0190] The insulating section 362 is positioned between the lower surface of the chamber 360 and the reflector 361 and may be ring-shaped. The insulating section 362 can reduce heat transfer from the heated reflector 361 to the chamber 360. The insulating section 362 may be made of ceramic material. The upper surface of the insulating section 362 may be provided with jaws. The jaws of the insulating section 362 and the jaws of the lower surface of the chamber 360 can accommodate a washer-shaped joint portion of the lower dome 358 and be vacuum-sealed.

[0191] The concentric circular lamp heater 366 includes multiple concentric circular ring-shaped lamp heaters and can be connected to a power supply 364. The concentric circular ring-shaped lamp heaters 366 are arranged at regular intervals along the inclined surface of the lower dome 358, and the concentric circular lamp heaters 366 are divided into three groups, each able to receive power independently of the others. The concentric circular ring-shaped lamp heaters 366 can be inserted into and aligned in ring-shaped grooves formed in the inclined surface of the reflector 361.

[0192] For example, the concentric lamp heaters 366 are halogen lamp heaters and there may be eight of them. The three lower lamp heaters can form a first group, the two middle lamp heaters can form a second group, and the three upper lamp heaters can form a third group. The first group can be connected to a first power supply 364a, the second group to a second power supply 364b, and the third group to a third power supply 364c. The first to third power supplies 364a to 364c can be controlled independently to heat the substrate uniformly.

[0193] The RF power supply 340 can supply RF power to the antenna 310 via an impedance matching box 342 and a power supply line 343. The antenna 310 through which the RF current flows must have sufficient cross-sectional area for the high current and preferably form a closed loop to form sufficient magnetic flux. The antenna 310 may use vertically erected striplines to absorb infrared radiation incident from its top or bottom and minimize resistance increase due to heating. The antenna 310 provides high light transmission to infrared radiation.

[0194] Furthermore, the antenna 310 can be coated with gold (Au) or silver (Ag) to increase infrared reflection. Additionally, a two-layer antenna 310 can be used to ensure sufficient magnetic flux. In a single-turn unit antenna, the location receiving RF power is positioned on the upper surface, which can reduce power loss due to capacitive coupling.

[0195] The lower dome 358 covers the lower surface of the chamber 360 and is formed of a transparent dielectric material, and can have the same curvature as the upper dome 352. The lamp heater 366 can be positioned on the lower surface of the lower dome 358. The reflector 361 can be positioned on the lower surface of the lamp heater 366.

[0196] In addition, the system may further include a control unit (not shown) for controlling the RF power supply 340. Here, for example, the source material supply path (not shown) and the reactant material supply path (not shown) for supplying the raw material gas can be formed separately.

[0197] On the other hand, the substrate support portion 372 can be used to place a substrate in the chamber 360 for the layer formation process. The substrate 374 can include various substrates for forming a gallium oxide (GaO) layer.

[0198] The substrate support section 372 is equipped with, for example, an electrostatic chuck, so that the substrate 374 can be placed on and supported. The substrate 374 can also be held by electrostatic attraction, or supported by vacuum attraction or mechanical force.

[0199] The clamp 350 can be positioned to cover the end portion of the upper dome 352. The clamp 350 is made of a conductor and can be cooled by cooling water. The lower surface of the clamp 350 has jaws to engage with the washer-shaped joint portion of the upper dome 352 and may include a curved portion 350a to cover a portion of the curved part of the upper dome 352. The curved portion 350a of the clamp 350 can be gold-plated to reflect infrared rays. The inner diameter of the clamp 350 may be substantially the same as the inner diameter of the upper liner 354. Alternatively, the inner diameter of the clamp 350 may be the same as the diameter of the antenna housing 330.

[0200] The chamber housing 332 can be positioned on the clamp 350 and cover the antenna housing 330.

[0201] On the other hand, the system can be configured to supply a gas containing gallium (Ga) as the source material, and a gas containing oxygen (O) as the reactant material. Here, the source material, for example, the gas containing gallium, may include trimethylgallium (TMGa) gas, and the reactant material, for example, the gas containing oxygen, may include oxygen (O2) gas or nitrous oxide (N2O) gas.

[0202] Although embodiments of the present invention have been described in more detail above with reference to the attached figures, the present invention is not necessarily limited to these embodiments and can be implemented in various modified forms without departing from the technical concept of the present invention. Therefore, the embodiments disclosed herein are for illustrative purposes only and not to limit the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by such embodiments. Accordingly, the embodiments described above should be understood to be illustrative and not limiting in all respects. The scope of protection of the present invention should be interpreted by the claims, and all technical concepts within an equivalent scope should be interpreted as being included in the scope of the rights of the present invention. [Explanation of Symbols]

[0203] 100, 200: Circuit board 120: Gallium oxide layer 121: First gallium oxide layer 122: Second gallium oxide layer 123: Third gallium oxide layer

Claims

1. A method for forming a gallium oxide (GaO) layer on a substrate, A step of forming a first gallium oxide layer, and The process includes the step of forming a second gallium oxide layer on the first gallium oxide layer, A method for producing a gallium oxide layer, wherein the step of forming one of the first gallium oxide layer and the second gallium oxide layer is performed using atomic layer deposition (ALD), and the step of forming the remaining gallium oxide layer is performed using chemical vapor deposition (CVD).

2. The method for producing a gallium oxide layer according to claim 1, wherein the step of forming the first gallium oxide layer is performed using atomic layer deposition (ALD), and the step of forming the second gallium oxide layer is performed using chemical vapor deposition (CVD).

3. The process includes the step of forming a third gallium oxide layer containing gallium oxide on the second gallium oxide layer, The method for producing a gallium oxide layer according to claim 2, wherein the step of forming the third gallium oxide layer is performed using atomic layer deposition (ALD).

4. The method for producing a gallium oxide layer according to claim 1, wherein the step of forming the first gallium oxide layer is performed using chemical vapor deposition, and the step of forming the second gallium oxide layer is performed using atomic layer deposition.

5. The process includes the step of forming a third gallium oxide layer containing gallium oxide on the second gallium oxide layer, The method for producing a gallium oxide layer according to claim 4, wherein the step of forming the third gallium oxide layer is performed by chemical vapor deposition.

6. The step of forming the one gallium oxide layer using the atomic layer deposition (ALD) method includes the step of injecting a first source material containing gallium, The first step is to inject purge gas. A step of injecting a first reactant substance containing oxygen, and A method for producing a gallium oxide layer according to any one of claims 1 to 5, comprising the step of injecting a second purge gas.

7. The first source substance contains trimethylgallium (TMGa), The first reactant material is oxygen (O ２ ) and nitrous oxide (N ２ The method for producing a gallium oxide layer according to claim 6, comprising any one of O).

8. Between the step of injecting the first source material and the step of injecting the first reactant material, hydrogen (H ２ The method for producing a gallium oxide layer according to claim 6, further comprising the step of forming a plasma containing a gas or argon (Ar) gas.

9. After the step of injecting the first reactant material, hydrogen (H ２ The method for producing a gallium oxide layer according to claim 6, further comprising the step of forming a plasma containing a gas or argon (Ar) gas.

10. The method for producing a gallium oxide layer according to claim 6, wherein a plasma containing oxygen is formed during the step of injecting the first reactant material.

11. The step of forming the remaining gallium oxide layer using the chemical vapor deposition (CVD) method includes the step of injecting a first source material containing gallium, and A method for producing a gallium oxide layer according to any one of claims 1 to 5, comprising the step of injecting a first reactant substance containing oxygen.

12. The first source substance contains trimethylgallium (TMGa), The first reactant material is oxygen (O ２ ) and nitrous oxide (N ２ The method for producing a gallium oxide layer according to claim 11, comprising any one of O).

13. After the steps of injecting the first source material and injecting the first reactant material, hydrogen (H ２ The method for producing a gallium oxide layer according to claim 11, further comprising the step of forming a plasma containing a gas or argon (Ar) gas.

14. A method for producing a gallium oxide layer according to claim 11, wherein an oxygen-containing plasma is formed during the steps of injecting the first source material and injecting the first reactant material.

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