Sheet for manufacturing semiconductor device

Abstract

A sheet for semiconductor device fabrication comprising: a base material, a pressure-sensitive adhesive layer, an intermediate layer, and a film-shaped adhesive, the sheet being configured by laminating the pressure-sensitive adhesive layer, the intermediate layer, and the film-shaped adhesive in this order on the base material, and the intermediate layer including a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component.

Description

[Technical field]

[0001] The present invention relates to a sheet for manufacturing a semiconductor device. This application claims priority based on Japanese Patent Application No. 2020-058734, filed on March 27, 2020, the contents of which are incorporated herein by reference. [Background technology]

[0002] When manufacturing a semiconductor device, a semiconductor chip with a film-like adhesive is used, which includes a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip. An example of a method for producing a semiconductor chip with a film-like adhesive is shown below.

[0003] That is, first, a dicing die bonding sheet is attached to the back surface of a semiconductor wafer. The dicing die bonding sheet may, for example, be one that includes a support sheet and a film-like adhesive provided on one side of the support sheet, and the support sheet can be used as a dicing sheet. There are several types of support sheets with different configurations, such as one that includes a substrate and an adhesive layer provided on one side of the substrate, and one that consists of a substrate only. In the support sheet that includes an adhesive layer, the outermost surface on the adhesive layer side is the surface on which the film-like adhesive is provided. The dicing die bonding sheet is attached to the back side of the semiconductor wafer by the film-like adhesive therein.

[0004] Next, the semiconductor wafer and the film-like adhesive on the support sheet are both cut by blade dicing. The "cutting" of the semiconductor wafer is also called "splitting", and the semiconductor wafer is divided into individual semiconductor chips. The film-like adhesive is cut along the periphery of the semiconductor chip. This results in a semiconductor chip with a film-like adhesive, which includes a semiconductor chip and the cut film-like adhesive provided on the back surface of the semiconductor chip, and also results in a group of semiconductor chips with a film-like adhesive, which is configured by holding a plurality of these semiconductor chips with a film-like adhesive in an aligned state on the support sheet.

[0005] Next, the semiconductor chip with the film-like adhesive is peeled off from the support sheet and picked up. If a support sheet with a curable adhesive layer is used, the adhesive layer is cured at this time to reduce the adhesiveness, which makes picking up easier. In this manner, a semiconductor chip with a film-like adhesive for use in manufacturing a semiconductor device is obtained.

[0006] Another example of the method for producing a semiconductor chip with a film-like adhesive is shown below. That is, first, a backgrind tape (sometimes called a "surface protection tape") is applied to the circuit-forming surface of a semiconductor wafer. Next, a portion to be divided is set inside the semiconductor wafer, and a laser beam is irradiated so as to converge on the focal point, with the region included in this portion as a focal point, to form a modified layer inside the semiconductor wafer. Next, the back surface of the semiconductor wafer is ground using a grinder to adjust the thickness of the semiconductor wafer to a desired value, and the grinding force applied to the semiconductor wafer at this time is used to divide (single) the semiconductor wafer at the portion where the modified layer is formed, to produce a plurality of semiconductor chips. This method of dividing a semiconductor wafer with the formation of a modified layer is called stealth dicing (registered trademark), and is essentially completely different from laser dicing, which cuts the semiconductor wafer from its surface while irradiating the semiconductor wafer with laser light to scrape off the semiconductor wafer at the irradiated portion.

[0007] Next, one die bonding sheet is attached to the back surface (in other words, the ground surface) of all of these semiconductor chips fixed on the back grinding tape after the above-mentioned grinding. The die bonding sheet may be the same as the above-mentioned dicing die bonding sheet. In this way, the die bonding sheet may be designed to have the same configuration as the dicing die bonding sheet, but is not used during dicing of the semiconductor wafer. The die bonding sheet is also attached to the back surface of the semiconductor chip by the film-like adhesive therein.

[0008] Next, after removing the backgrind tape from the semiconductor chip, the die bonding sheet is stretched in a direction parallel to its surface (e.g., the surface of the film-like adhesive that is attached to the semiconductor chip) while being cooled, a process known as expanding (cool expanding), thereby cutting the film-like adhesive along the outer periphery of the semiconductor chip. By the above steps, a semiconductor chip with a film-like adhesive is obtained, which includes a semiconductor chip and the cut film-like adhesive provided on the back surface of the semiconductor chip.

[0009] Next, in the same manner as in the case where the above-mentioned blade dicing is used, the semiconductor chip with the film-like adhesive is separated from the support sheet and picked up, thereby obtaining a semiconductor chip with the film-like adhesive for use in manufacturing a semiconductor device.

[0010] Both the dicing die bonding sheet and the die bonding sheet can be used to manufacture a semiconductor chip with a film-like adhesive, and ultimately enable the manufacture of the desired semiconductor device. In this specification, the dicing die bonding sheet and the die bonding sheet are collectively referred to as "semiconductor device manufacturing sheet".

[0011] As a sheet for manufacturing a semiconductor device, for example, a dicing die bonding tape (corresponding to the dicing die bonding sheet) having a structure in which a base layer (corresponding to the support sheet) and an adhesive layer (corresponding to the film-like adhesive) are laminated in direct contact has been disclosed (see Patent Document 1). In this dicing die bonding tape, the 90-degree peel strength of the base layer and adhesive layer at -15°C is adjusted to a specific range, so that the adhesive layer can be accurately divided by expanding, and since the 90-degree peel strength of the base layer and adhesive layer at 23°C is adjusted to a specific range, when this dicing die bonding tape is used, a semiconductor chip with an adhesive layer (corresponding to the semiconductor chip with the film-like adhesive) can be picked up without difficulty, and peeling of the semiconductor wafer and the semiconductor chip from the adhesive layer can be suppressed during the process of picking up. [Prior art documents] [Patent documents]

[0012] [Patent Document 1] Japanese Patent Application Publication No. 2018-56289 Summary of the Invention [Problem to be solved by the invention]

[0013] However, although the dicing die bonding tape disclosed in Patent Document 1 is suitable for use in Stealth Dicing (registered trademark), it is not suitable for use in blade dicing. When this dicing die bonding tape is used for blade dicing, whisker-like cutting debris (sometimes called "whiskers" in the art) is likely to be generated from the base layer, and the tape is poorly suited for dividing semiconductor wafers.

[0014] An object of the present invention is to provide a sheet for manufacturing semiconductor device, which has excellent suitability for dividing semiconductor wafers. [Means for solving the problem]

[0015] The present invention provides a sheet for manufacturing semiconductor device, comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, the adhesive layer, the intermediate layer, and the film-like adhesive being laminated in this order on the substrate, and the intermediate layer containing a non-silicon-based resin having a weight-average molecular weight of 100,000 or less as a main component. In the sheet for manufacturing a semiconductor device of the present invention, when the surface of the intermediate layer facing the film-like adhesive is analyzed by X-ray photoelectron spectroscopy, the ratio of the silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon may be 1 to 20%. In the sheet for manufacturing semiconductor device of the present invention, the intermediate layer may contain an ethylene-vinyl acetate copolymer which is the non-silicon-based resin, and a siloxane-based compound, and in the ethylene-vinyl acetate copolymer, the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units may be 10 to 40 mass%, the content of the ethylene-vinyl acetate copolymer in the intermediate layer may be 90 to 99.99 mass%, and the content of the siloxane-based compound in the intermediate layer may be 0.01 to 10 mass%, relative to the total mass of the intermediate layer. Effect of the Invention

[0016] According to the present invention, there is provided a sheet for manufacturing semiconductor device which has excellent suitability for dividing semiconductor wafers. [Brief description of the drawings]

[0017] [Figure 1] 1 is a cross-sectional view that illustrates a schematic diagram of a sheet for manufacturing a semiconductor device according to one embodiment of the present invention. [Diagram 2] FIG. 2 is a plan view of the sheet for manufacturing semiconductor device shown in FIG. [Figure 3A] FIG. 2 is a cross-sectional view for illustrating a schematic example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 3B] FIG. 2 is a cross-sectional view for illustrating a schematic example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 3C] FIG. 2 is a cross-sectional view for illustrating a schematic example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 4A] 1A to 1C are cross-sectional views for illustrating an example of a method for manufacturing a semiconductor chip. [Figure 4B] 1A to 1C are cross-sectional views for illustrating an example of a method for manufacturing a semiconductor chip. [Figure 4C] 1A to 1C are cross-sectional views for illustrating an example of a method for manufacturing a semiconductor chip. [Figure 5A] 10A to 10C are cross-sectional views for illustrating a schematic example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 5B] 10A to 10C are cross-sectional views for illustrating a schematic example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 5C] 10A to 10C are cross-sectional views for illustrating a schematic example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] ◇ Sheets for manufacturing semiconductor devices A sheet for manufacturing semiconductor device according to one embodiment of the present invention comprises a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, and is configured by laminating the adhesive layer, the intermediate layer, and the film-like adhesive in this order on the substrate, and the intermediate layer contains a non-silicon-based resin having a weight average molecular weight of 100,000 or less as its main component.

[0019] When the semiconductor device manufacturing sheet of this embodiment is used as a dicing die bonding sheet and blade dicing is performed, the semiconductor device manufacturing sheet has the intermediate layer, which makes it easy to prevent the blade from reaching the substrate, and suppresses the generation of whisker-like cutting debris (also known as whiskers, hereinafter, not limited to those derived from the substrate, but may simply be referred to as "cutting debris") from the substrate. Furthermore, since the main component of the intermediate layer cut by the blade is a non-silicon-based resin having a weight average molecular weight of 100,000 or less, and in particular, the weight average molecular weight is 100,000 or less, the generation of the cutting debris from the intermediate layer can also be suppressed.

[0020] On the other hand, when the semiconductor device manufacturing sheet of this embodiment is used as a die bonding sheet and dicing involving the formation of a modified layer on a semiconductor wafer (stealth dicing (registered trademark)) is performed, since the semiconductor device manufacturing sheet has the intermediate layer, the semiconductor device manufacturing sheet can be subsequently stretched in a direction parallel to its surface (for example, the surface of the film-like adhesive that is attached to the semiconductor chip), i.e., expanded, so that the film-like adhesive can be cut accurately at the desired location and cutting defects can be suppressed.

[0021] In this way, the sheet for manufacturing semiconductor device of this embodiment suppresses the generation of cutting chips from the base material and intermediate layer during blade dicing, and suppresses poor cutting of the film-like adhesive during the expanding process, and has the property of suppressing the occurrence of defects when dividing semiconductor wafers, making it excellent in suitability for dividing semiconductor wafers.

[0022] In this specification, unless otherwise specified, the "weight average molecular weight" is a polystyrene equivalent value measured by gel permeation chromatography (GPC).

[0023] The method of using the sheet for manufacturing semiconductor device of this embodiment will be described in detail later.

[0024] The sheet for manufacturing a semiconductor device according to the present embodiment will be described in detail below with reference to the drawings. Note that the drawings used in the following description may show the main parts enlarged for the sake of convenience in order to make the features of the present invention easier to understand, and the dimensional ratios of each component may not necessarily be the same as the actual ones.

[0025] FIG. 1 is a cross-sectional view that illustrates a sheet for manufacturing a semiconductor device according to one embodiment of the present invention, and FIG. 2 is a plan view of the sheet for manufacturing a semiconductor device illustrated in FIG. In FIG. 2 and subsequent figures, the same components as those shown in the figures already described are given the same reference numerals as in the figures already described, and detailed description thereof will be omitted.

[0026] The sheet 101 for manufacturing semiconductor device shown here includes a base material 11, and is configured by laminating, in this order, a pressure-sensitive adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14 on the base material 11. The sheet 101 for manufacturing semiconductor device further includes a release film 15 on a surface 14a (hereinafter sometimes referred to as a "first surface") of the film-like adhesive 14 opposite to the side on which the intermediate layer 13 is provided.

[0027] In the sheet 101 for manufacturing semiconductor device, an adhesive layer 12 is provided on one surface (sometimes referred to as the "first surface" in this specification) 11a of a substrate 11, an intermediate layer 13 is provided on a surface (sometimes referred to as the "first surface" in this specification) 12a of the adhesive layer 12 opposite to the side on which the substrate 11 is provided, a film-like adhesive 14 is provided on a surface (sometimes referred to as the "first surface" in this specification) 13a of the intermediate layer 13 opposite to the side on which the adhesive layer 12 is provided, and a release film 15 is provided on the first surface 14a of the film-like adhesive 14. In this manner, the sheet 101 for manufacturing semiconductor device is configured by laminating the substrate 11, the adhesive layer 12, the intermediate layer 13, and the film-like adhesive 14 in this order in the thickness direction.

[0028] The semiconductor device manufacturing sheet 101 is used by removing the release film 15 and attaching the first surface 14a of the film-like adhesive 14 therein to the back surface of a semiconductor wafer, a semiconductor chip, or a semiconductor wafer that has not been completely divided (not shown).

[0029] In this specification, for both a semiconductor wafer and a semiconductor chip, the surface on which circuits are formed is referred to as the "circuit-forming surface," and the surface opposite the circuit-forming surface is referred to as the "rear surface."

[0030] In this specification, a laminate having a structure in which a base material and a pressure-sensitive adhesive layer are laminated in their thickness direction and no intermediate layer is laminated is sometimes referred to as a "support sheet." In Figure 1, the support sheet is indicated by the reference numeral 1. A laminate having a structure in which a substrate, a pressure-sensitive adhesive layer, and an intermediate layer are laminated in this order in the thickness direction may be referred to as a "laminate sheet." In Fig. 1, the laminate sheet is indicated by the reference numeral 10. The laminate of the support sheet and the intermediate layer is included in the laminate sheet.

[0031] When viewed from above, the intermediate layer 13 and the film-like adhesive 14 each have a circular planar shape, and the diameter of the intermediate layer 13 and the diameter of the film-like adhesive 14 are the same. In the semiconductor device manufacturing sheet 101, the intermediate layer 13 and the film-like adhesive 14 are arranged so that their centers coincide, in other words, so that the positions of the outer periphery of the intermediate layer 13 and the film-like adhesive 14 both coincide in the radial direction.

[0032] The first surface 13a of the intermediate layer 13 and the first surface 14a of the film-like adhesive 14 each have an area smaller than that of the first surface 12a of the pressure-sensitive adhesive layer 12. 13 (i.e., diameter) and the width W of the film adhesive 14 14 The maximum values ​​(i.e., diameters) of are both smaller than the maximum width of the adhesive layer 12 and the maximum width of the base material 11. Therefore, in the sheet 101 for manufacturing semiconductor device, a part of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film-like adhesive 14. In such an area of ​​the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated, the release film 15 is laminated in direct contact therewith, and when the release film 15 is removed, this area is exposed (hereinafter, in this specification, this area may be referred to as the "non-laminated area"). In addition, in the semiconductor device manufacturing sheet 101 having a release film 15, the areas of the adhesive layer 12 that are not covered by the intermediate layer 13 and the film-like adhesive 14 may or may not have areas where the release film 15 is not laminated, as shown here.

[0033] The semiconductor device manufacturing sheet 101, in which the film-like adhesive 14 is not cut and is attached to the semiconductor wafer or semiconductor chip or the like by the film-like adhesive 14, can be fixed by attaching a part of the non-laminated region of the pressure-sensitive adhesive layer 12 therein to a jig such as a ring frame for fixing a semiconductor wafer. Therefore, it is not necessary to provide a separate jig adhesive layer on the semiconductor device manufacturing sheet 101 for fixing the semiconductor device manufacturing sheet 101 to the jig. And since it is not necessary to provide a jig adhesive layer, the semiconductor device manufacturing sheet 101 can be manufactured inexpensively and efficiently.

[0034] Thus, the sheet 101 for manufacturing semiconductor device has an advantageous effect by not including a jig adhesive layer, but may include a jig adhesive layer. In this case, the jig adhesive layer is provided in a region near the periphery of the surface of any of the layers constituting the sheet 101 for manufacturing semiconductor device. Examples of such a region include the non-laminated region on the first surface 12a of the pressure-sensitive adhesive layer 12.

[0035] The adhesive layer for the jig may be a known one, for example, it may be a single-layer structure containing an adhesive component, or it may be a multi-layer structure in which layers containing an adhesive component are laminated on both sides of a core sheet.

[0036] Furthermore, as described below, when the semiconductor device manufacturing sheet 101 is stretched in a direction parallel to its surface (for example, the first surface 12a of the adhesive layer 12), that is, so-called expanding, the presence of the non-laminated region on the first surface 12a of the adhesive layer 12 makes it easy to expand the semiconductor device manufacturing sheet 101. Not only can the film-like adhesive 14 be easily cut, but peeling of the intermediate layer 13 and the film-like adhesive 14 from the adhesive layer 12 can also be suppressed.

[0037] In sheet 101 for manufacturing semiconductor device, intermediate layer 13 contains a non-silicon based resin having a weight average molecular weight of 100,000 or less as a main component.

[0038] The sheet for manufacturing a semiconductor device of this embodiment is not limited to that shown in Figures 1 and 2, and some of the configurations shown in Figures 1 and 2 may be changed, deleted, or added within the scope that does not impair the effects of the present invention.

[0039] For example, the sheet for manufacturing a semiconductor device of this embodiment may include other layers that do not fall under any of the following: a substrate, a pressure-sensitive adhesive layer, an intermediate layer, a film-like adhesive, a release film, and a jig adhesive layer. However, the sheet for manufacturing a semiconductor device of this embodiment preferably includes the pressure-sensitive adhesive layer in direct contact with the substrate, the intermediate layer in direct contact with the pressure-sensitive adhesive layer, and the film-like adhesive in direct contact with the intermediate layer, as shown in FIG.

[0040] For example, in the sheet for manufacturing semiconductor device of this embodiment, the planar shapes of the intermediate layer and the film-like adhesive may be shapes other than circular, and the planar shapes of the intermediate layer and the film-like adhesive may be the same as or different from each other. Furthermore, the area of ​​the first surface of the intermediate layer and the area of ​​the first surface of the film-like adhesive are both preferably smaller than the area of ​​the surface of the layer closer to the substrate than these (e.g., the first surface of the pressure-sensitive adhesive layer), and may be the same as or different from each other. Furthermore, the positions of the outer peripheries of the intermediate layer and the film-like adhesive may or may not coincide in the radial direction. Next, each layer constituting the sheet for manufacturing semiconductor device of this embodiment will be described in more detail.

[0041] ○Base material The substrate is in the form of a sheet or film. The material constituting the substrate is preferably various resins, and specific examples thereof include polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE, etc.)), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylenebutylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane acrylate, polyimide (PI), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, ethylene copolymers other than ethylene-(meth)acrylic acid copolymer and ethylene-(meth)acrylic acid ester copolymer, polystyrene, polycarbonate, fluororesin, water additives, modified products, crosslinked products, or copolymers of any of these resins, and the like.

[0042] In this specification, the term "(meth)acrylic acid" is a concept that includes both "acrylic acid" and "methacrylic acid." The same applies to terms similar to (meth)acrylic acid. For example, "(meth)acrylate" is a concept that includes both "acrylate" and "methacrylate," and "(meth)acryloyl group" is a concept that includes both "acryloyl group" and "methacryloyl group."

[0043] The resin constituting the substrate may be of only one type, or of two or more types. When two or more types are used, the combination and ratio thereof can be selected arbitrarily.

[0044] The substrate may be one layer (single layer) or two or more layers. When the substrate is made of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited as long as it does not impair the effects of the present invention. In this specification, not only in the case of a substrate, "multiple layers may be the same or different from one another" means "all layers may be the same, all layers may be different, or only some layers may be the same", and further, "multiple layers are different from one another" means "at least one of the constituent materials and thicknesses of each layer is different from one another".

[0045] The thickness of the substrate can be appropriately selected depending on the purpose, but is preferably 50 to 300 μm, and more preferably 60 to 150 μm. When the thickness of the substrate is equal to or greater than the lower limit, the structure of the substrate is more stable. When the thickness of the substrate is equal to or less than the upper limit, the film-like adhesive can be cut more easily during blade dicing and the expanding of the semiconductor device manufacturing sheet. Here, the "thickness of the substrate" means the thickness of the entire substrate. For example, the thickness of a substrate consisting of multiple layers means the total thickness of all layers constituting the substrate.

[0046] In order to improve adhesion to other layers, such as an adhesive layer, provided thereon, the substrate may be subjected to a surface treatment such as sandblasting, solvent treatment, embossing, or other roughening treatment; or a corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone / ultraviolet radiation treatment, flame treatment, chromate treatment, hot air treatment, or other oxidation treatment. The surface of the substrate may be treated with a primer. The substrate may have an antistatic coating layer; a layer that prevents the substrate from adhering to other sheets or to an adsorption table when the die bonding sheets are stacked and stored; or the like.

[0047] In addition to the main constituent materials such as the resin, the substrate may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers).

[0048] The optical properties of the substrate are not particularly limited as long as the effects of the present invention are not impaired. The substrate may be, for example, a substrate that transmits laser light or energy rays.

[0049] The substrate can be produced by a known method. For example, a substrate containing a resin (having a resin as a constituent material) can be produced by molding the resin or a resin composition containing the resin.

[0050] Adhesive layer The pressure-sensitive adhesive layer is in the form of a sheet or film and contains a pressure-sensitive adhesive. The pressure-sensitive adhesive layer can be formed using a pressure-sensitive adhesive composition containing the pressure-sensitive adhesive. For example, the pressure-sensitive adhesive composition can be applied to a surface on which the pressure-sensitive adhesive layer is to be formed, and then dried as necessary to form the pressure-sensitive adhesive layer at the desired site.

[0051] In the pressure-sensitive adhesive layer, the proportion of the total content of one or more ingredients contained in the pressure-sensitive adhesive layer, which will be described later, relative to the total mass of the pressure-sensitive adhesive layer does not exceed 100 mass %. Similarly, in the pressure-sensitive adhesive composition, the proportion of the total content of one or more components contained in the pressure-sensitive adhesive composition, which will be described later, relative to the total mass of the pressure-sensitive adhesive composition does not exceed 100 mass %.

[0052] The pressure-sensitive adhesive composition may be applied by a known method, for example, a method using various coaters such as an air knife coater, a blade coater, a bar coater, a gravure coater, a roll coater, a roll knife coater, a curtain coater, a die coater, a knife coater, a screen coater, a Mayer bar coater, or a kiss coater.

[0053] The drying conditions for the pressure-sensitive adhesive composition are not particularly limited. When the pressure-sensitive adhesive composition contains a solvent described below, it is preferable to heat-dry the composition. In this case, it is preferable to dry the composition at 70 to 130°C for 10 seconds to 5 minutes.

[0054] Examples of the adhesive include adhesive resins such as acrylic resins, urethane resins, rubber-based resins, silicone resins, epoxy-based resins, polyvinyl ethers, polycarbonates, and ester-based resins, with acrylic resins being preferred.

[0055] In this specification, the term "adhesive resin" includes both a resin having adhesiveness and a resin having adhesiveness. For example, the adhesive resin includes not only resins having adhesiveness by themselves, but also resins that exhibit adhesiveness when used in combination with other components such as additives, and resins that exhibit adhesiveness in the presence of a trigger such as heat or water.

[0056] The pressure-sensitive adhesive layer may be either curable or non-curable, for example, either energy ray curable or non-energy ray curable. The physical properties of the curable pressure-sensitive adhesive layer before and after curing can be easily adjusted.

[0057] In this specification, the term "energy rays" refers to electromagnetic waves or charged particle beams that have an energy quantum. Examples of energy rays include ultraviolet rays, radiation, and electron beams. Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, or an LED lamp as an ultraviolet ray source. Electron beams can be irradiated by generating them using an electron beam accelerator or the like. In this specification, the term "energy ray curable" means a property of being cured by irradiation with energy rays, and the term "non-energy ray curable" means a property of not being cured even when irradiated with energy rays.

[0058] The adhesive layer may consist of one layer (single layer), or may consist of two or more layers. If it consists of multiple layers, these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited.

[0059] The thickness of the pressure-sensitive adhesive layer is preferably from 1 to 100 μm, more preferably from 1 to 60 μm, and particularly preferably from 1 to 30 μm. Here, "the thickness of the adhesive layer" means the thickness of the entire adhesive layer, and for example, the thickness of an adhesive layer consisting of multiple layers means the total thickness of all layers that make up the adhesive layer.

[0060] The optical properties of the pressure-sensitive adhesive layer are not particularly limited as long as the effects of the present invention are not impaired. For example, the pressure-sensitive adhesive layer may transmit energy rays. Next, the pressure-sensitive adhesive composition will be described.

[0061] <<Adhesive composition>> When the adhesive layer is energy ray curable, examples of the adhesive composition containing an energy ray curable adhesive, i.e., the energy ray curable adhesive composition, include an adhesive composition (I-1) containing a non-energy ray curable adhesive resin (I-1a) (hereinafter may be abbreviated as "adhesive resin (I-1a)") and an energy ray curable compound; an adhesive composition (I-2) containing an energy ray curable adhesive resin (I-2a) (hereinafter may be abbreviated as "adhesive resin (I-2a)") in which an unsaturated group has been introduced into the side chain of the non-energy ray curable adhesive resin (I-1a); an adhesive composition (I-3) containing the adhesive resin (I-2a) and an energy ray curable compound, and the like.

[0062] <Adhesive composition (I-1)> As described above, the pressure-sensitive adhesive composition (I-1) contains a non-energy ray-curable pressure-sensitive adhesive resin (I-1a) and an energy ray-curable compound.

[0063] [Adhesive resin (I-1a)] The adhesive resin (I-1a) is preferably an acrylic resin. The acrylic resin may, for example, be an acrylic polymer having at least a structural unit derived from an alkyl (meth)acrylate ester. The structural unit contained in the acrylic resin may be of only one type, or may be of two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0064] The adhesive composition (I-1) may contain only one type of adhesive resin (I-1a), or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0065] In the pressure-sensitive adhesive composition (I-1), the content of the adhesive resin (I-1a) relative to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 15 to 90 mass%.

[0066] [Energy ray curable compounds] The energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1) includes a monomer or oligomer having an energy ray-polymerizable unsaturated group and capable of being cured by irradiation with energy rays. Among the energy ray-curable compounds, examples of the monomer include polyvalent (meth)acrylates such as trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butylene glycol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate; urethane (meth)acrylate; polyester (meth)acrylate; polyether (meth)acrylate; and epoxy (meth)acrylate. Among the energy ray-curable compounds, examples of the oligomer include oligomers obtained by polymerizing the above-exemplified monomers. The energy ray curable compound is preferably a urethane (meth)acrylate or a urethane (meth)acrylate oligomer, since it has a relatively large molecular weight and is less likely to reduce the storage modulus of the pressure-sensitive adhesive layer.

[0067] The pressure-sensitive adhesive composition (I-1) may contain only one type of energy ray-curable compound, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0068] In the pressure-sensitive adhesive composition (I-1), the content of the energy ray-curable compound relative to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 1 to 95 mass%, more preferably 5 to 90 mass%, and particularly preferably 10 to 85 mass%.

[0069] [Crosslinking agent] When the adhesive resin (I-1a) is an acrylic polymer having, in addition to a structural unit derived from a (meth)acrylic acid alkyl ester, a structural unit derived from a functional group-containing monomer, it is preferable that the adhesive composition (I-1) further contains a crosslinking agent.

[0070] The crosslinking agent, for example, reacts with the functional group to crosslink the adhesive resins (I-1a) together. Examples of the crosslinking agent include isocyanate-based crosslinking agents (crosslinking agents having an isocyanate group) such as tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy-based crosslinking agents (crosslinking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine-based crosslinking agents (crosslinking agents having an aziridinyl group) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure) such as aluminum chelate; and isocyanurate-based crosslinking agents (crosslinking agents having an isocyanuric acid skeleton). The crosslinking agent is preferably an isocyanate-based crosslinking agent from the viewpoints of improving the cohesive strength of the pressure-sensitive adhesive and thereby improving the adhesive strength of the pressure-sensitive adhesive layer, and of easy availability.

[0071] The crosslinking agent contained in the pressure-sensitive adhesive composition (I-1) may be one type only, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0072] When a crosslinking agent is used, the content of the crosslinking agent in the pressure-sensitive adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-1a).

[0073] [Photopolymerization initiator] The pressure-sensitive adhesive composition (I-1) may further contain a photopolymerization initiator. The pressure-sensitive adhesive composition (I-1) containing a photopolymerization initiator sufficiently undergoes a curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

[0074] Examples of the photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; acyl phosphinates such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; Examples of such compounds include phosphine oxide compounds; sulfide compounds such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzyl; dibenzyl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; and 2-chloroanthraquinone. As the photopolymerization initiator, for example, a quinone compound such as 1-chloroanthraquinone; a photosensitizer such as an amine, and the like can also be used.

[0075] The photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-1) may be only one type, or may be two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0076] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable compound.

[0077] [Other additives] The pressure-sensitive adhesive composition (I-1) may contain other additives that do not fall into any of the above-mentioned components, as long as the effects of the present invention are not impaired. Examples of the other additives include known additives such as antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, colorants (pigments, dyes), sensitizers, tackifiers, reaction retarders, and crosslinking accelerators (catalysts).

[0078] The reaction retarder is, for example, a component for suppressing the progress of unintended crosslinking reaction in the pressure-sensitive adhesive composition (I-1) during storage due to the action of a catalyst mixed in the pressure-sensitive adhesive composition (I-1). For example, the reaction retarder may be one that forms a chelate complex by chelating with the catalyst, and more specifically, one that has two or more carbonyl groups (-C(=O)-) in one molecule.

[0079] The other additives contained in the pressure-sensitive adhesive composition (I-1) may be of only one type, or of two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0080] The content of other additives in the pressure-sensitive adhesive composition (I-1) is not particularly limited and may be appropriately selected depending on the type of additive.

[0081] [solvent] The pressure-sensitive adhesive composition (I-1) may contain a solvent. By containing a solvent, the pressure-sensitive adhesive composition (I-1) has improved suitability for application to a surface to be coated.

[0082] The solvent is preferably an organic solvent.

[0083] <Adhesive composition (I-2)> As described above, the adhesive composition (I-2) contains an energy ray-curable adhesive resin (I-2a) in which an unsaturated group has been introduced into the side chain of a non-energy ray-curable adhesive resin (I-1a).

[0084] [Adhesive resin (I-2a)] The adhesive resin (I-2a) can be obtained, for example, by reacting a functional group in the adhesive resin (I-1a) with an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group.

[0085] The unsaturated group-containing compound is a compound that, in addition to the energy ray-polymerizable unsaturated group, further has a group that can bond to the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a). Examples of the energy ray-polymerizable unsaturated group include a (meth)acryloyl group, a vinyl group (ethenyl group), and an allyl group (2-propenyl group), and the like, with a (meth)acryloyl group being preferred. Examples of groups capable of bonding to functional groups in the adhesive resin (I-1a) include isocyanate groups and glycidyl groups capable of bonding to hydroxyl groups or amino groups, and hydroxyl groups and amino groups capable of bonding to carboxy groups or epoxy groups.

[0086] Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.

[0087] The adhesive composition (I-2) may contain only one type of adhesive resin (I-2a), or two or more types of adhesive resins. When two or more types of adhesive resins are contained, the combination and ratio thereof can be selected arbitrarily.

[0088] In the pressure-sensitive adhesive composition (I-2), the content of the adhesive resin (I-2a) relative to the total mass of the pressure-sensitive adhesive composition (I-2) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 10 to 90 mass%.

[0089] [Crosslinking agent] When the adhesive resin (I-2a) is, for example, an acrylic polymer having a structural unit derived from a functional group-containing monomer similar to that in the adhesive resin (I-1a), the adhesive composition (I-2) may further contain a crosslinking agent.

[0090] The crosslinking agent in the pressure-sensitive adhesive composition (I-2) may be the same as the crosslinking agent in the pressure-sensitive adhesive composition (I-1). The crosslinking agent contained in the pressure-sensitive adhesive composition (I-2) may be one type only, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0091] When a crosslinking agent is used, the content of the crosslinking agent in the pressure-sensitive adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-2a).

[0092] [Photopolymerization initiator] The pressure-sensitive adhesive composition (I-2) may further contain a photopolymerization initiator. The pressure-sensitive adhesive composition (I-2) containing a photopolymerization initiator sufficiently undergoes a curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

[0093] The photopolymerization initiator in the pressure-sensitive adhesive composition (I-2) may be the same as the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1). The photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-2) may be only one type, or may be two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0094] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-2) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-2a).

[0095] [Other additives, solvents] The pressure-sensitive adhesive composition (I-2) may contain other additives that do not fall under any of the above-mentioned components, as long as the effects of the present invention are not impaired. The pressure-sensitive adhesive composition (I-2) may contain a solvent for the same purpose as in the pressure-sensitive adhesive composition (I-1). The other additives and solvents in the pressure-sensitive adhesive composition (I-2) include the same as the other additives and solvents in the pressure-sensitive adhesive composition (I-1), respectively. The other additives and the solvent contained in the pressure-sensitive adhesive composition (I-2) may each be of only one type, or of two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily. The contents of other additives and the solvent in the pressure-sensitive adhesive composition (I-2) are not particularly limited and may be appropriately selected depending on the types thereof.

[0096] <Adhesive composition (I-3)> As described above, the pressure-sensitive adhesive composition (I-3) contains the pressure-sensitive adhesive resin (I-2a) and an energy ray-curable compound.

[0097] In the pressure-sensitive adhesive composition (I-3), the content of the adhesive resin (I-2a) relative to the total mass of the pressure-sensitive adhesive composition (I-3) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 15 to 90 mass%.

[0098] [Energy ray curable compounds] The energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-3) includes monomers and oligomers that have an energy ray-polymerizable unsaturated group and are curable by irradiation with energy rays, and includes the same as the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1). The pressure-sensitive adhesive composition (I-3) may contain only one type of energy ray-curable compound, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0099] In the pressure-sensitive adhesive composition (I-3), the content of the energy ray-curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-2a).

[0100] [Photopolymerization initiator] The pressure-sensitive adhesive composition (I-3) may further contain a photopolymerization initiator. The pressure-sensitive adhesive composition (I-3) containing a photopolymerization initiator sufficiently undergoes a curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

[0101] The photopolymerization initiator in the pressure-sensitive adhesive composition (I-3) may be the same as the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1). The photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-3) may be only one type, or may be two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0102] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-3) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the total content of the pressure-sensitive adhesive resin (I-2a) and the energy ray-curable compound.

[0103] [Other additives, solvents] The pressure-sensitive adhesive composition (I-3) may contain other additives that do not fall under any of the above-mentioned components, as long as the effects of the present invention are not impaired. The pressure-sensitive adhesive composition (I-3) may contain a solvent for the same purpose as in the pressure-sensitive adhesive composition (I-1). The other additives and solvents in the pressure-sensitive adhesive composition (I-3) include the same as the other additives and solvents in the pressure-sensitive adhesive composition (I-1), respectively. The other additives and the solvent contained in the pressure-sensitive adhesive composition (I-3) may each be of only one type, or of two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily. The contents of other additives and the solvent in the pressure-sensitive adhesive composition (I-3) are not particularly limited and may be appropriately selected depending on the types thereof.

[0104] <Adhesive compositions other than the adhesive compositions (I-1) to (I-3)> So far, the adhesive composition (I-1), the adhesive composition (I-2) and the adhesive composition (I-3) have been mainly explained, but the components explained as contained therein can be similarly used in general adhesive compositions other than these three types of adhesive compositions (referred to in this specification as "adhesive compositions other than adhesive compositions (I-1) to (I-3)").

[0105] Examples of pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) include energy ray-curable pressure-sensitive adhesive compositions as well as non-energy ray-curable pressure-sensitive adhesive compositions. Examples of the non-energy ray curable adhesive composition include an adhesive composition (I-4) containing a non-energy ray curable adhesive resin (I-1a) such as an acrylic resin, a urethane resin, a rubber-based resin, a silicone resin, an epoxy-based resin, a polyvinyl ether, a polycarbonate, or an ester-based resin, and those containing an acrylic resin are preferred.

[0106] It is preferable that the pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) contain one or more crosslinking agents, and the content thereof can be the same as that of the above-mentioned pressure-sensitive adhesive composition (I-1) etc.

[0107] <Adhesive composition (I-4)> A preferred pressure-sensitive adhesive composition (I-4) is, for example, one containing the pressure-sensitive adhesive resin (I-1a) and a crosslinking agent.

[0108] [Adhesive resin (I-1a)] The adhesive resin (I-1a) in the adhesive composition (I-4) may be the same as the adhesive resin (I-1a) in the adhesive composition (I-1). The adhesive composition (I-4) may contain only one type of adhesive resin (I-1a), or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0109] In the pressure-sensitive adhesive composition (I-4), the content of the adhesive resin (I-1a) relative to the total mass of the pressure-sensitive adhesive composition (I-4) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 15 to 90 mass%.

[0110] [Crosslinking agent] When the adhesive resin (I-1a) is an acrylic polymer having, in addition to a structural unit derived from a (meth)acrylic acid alkyl ester, a structural unit derived from a functional group-containing monomer, it is preferable that the adhesive composition (I-4) further contains a crosslinking agent.

[0111] The crosslinking agent in the pressure-sensitive adhesive composition (I-4) may be the same as the crosslinking agent in the pressure-sensitive adhesive composition (I-1). The crosslinking agent contained in the pressure-sensitive adhesive composition (I-4) may be one type only, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0112] In the pressure-sensitive adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and particularly preferably 0.1 to 10 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-1a).

[0113] [Other additives, solvents] The pressure-sensitive adhesive composition (I-4) may contain other additives that do not fall into any of the above-mentioned components, as long as the effects of the present invention are not impaired. The pressure-sensitive adhesive composition (I-4) may contain a solvent for the same purpose as in the pressure-sensitive adhesive composition (I-1). The other additives and solvents in the pressure-sensitive adhesive composition (I-4) include the same as the other additives and solvents in the pressure-sensitive adhesive composition (I-1), respectively. The other additives and the solvent contained in the pressure-sensitive adhesive composition (I-4) may each be of only one type, or of two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily. The contents of other additives and the solvent in the pressure-sensitive adhesive composition (I-4) are not particularly limited and may be appropriately selected depending on the types thereof.

[0114] <<Method of manufacturing pressure-sensitive adhesive composition>> The pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3), such as the pressure-sensitive adhesive compositions (I-4), can be obtained by blending the pressure-sensitive adhesive and, as necessary, components other than the pressure-sensitive adhesive, for example, components for constituting the pressure-sensitive adhesive composition. The order of addition of the components when blending is not particularly limited, and two or more components may be added simultaneously. When a solvent is used, the solvent may be used by mixing it with any of the other ingredients to pre-dilute the ingredients, or the solvent may be used by mixing it with any of the other ingredients without pre-diluting the ingredients. The method for mixing the components during blending is not particularly limited, and may be appropriately selected from known methods such as a method of mixing by rotating a stirrer or stirring blade, a method of mixing using a mixer, a method of mixing by adding ultrasound, etc. The temperature and time during addition and mixing of each component are not particularly limited as long as the components do not deteriorate, and may be adjusted appropriately. A temperature of 15 to 30°C is preferred.

[0115] ○Intermediate layer, intermediate layer forming composition The intermediate layer is in the form of a sheet or film, and contains the non-silicon resin as a main component. The intermediate layer may contain only a non-silicon resin (consisting of a non-silicon resin), or may contain a non-silicon resin and other components.

[0116] The intermediate layer can be formed, for example, by using a composition for forming an intermediate layer containing the non-silicon resin. For example, the intermediate layer can be formed at a desired location by applying the composition for forming an intermediate layer to a surface on which the intermediate layer is to be formed and drying it as necessary.

[0117] In the intermediate layer, the ratio of the total content of one or more components contained in the intermediate layer, which will be described later, to the total mass of the intermediate layer does not exceed 100 mass %. Similarly, in the composition for forming an intermediate layer, the ratio of the total content of one or more components contained in the composition for forming an intermediate layer, which will be described later, to the total mass of the composition for forming an intermediate layer does not exceed 100 mass %.

[0118] The intermediate layer forming composition can be applied in the same manner as in the application of the pressure-sensitive adhesive composition described above.

[0119] The drying conditions of the composition for forming an intermediate layer are not particularly limited. When the composition for forming an intermediate layer contains a solvent described later, it is preferable to heat-dry it, and in this case, it is preferable to dry it under conditions of, for example, 60 to 130° C. for 1 to 6 minutes.

[0120] The non-silicon resin has a weight average molecular weight of 100,000 or less. In order to further improve the suitability of the sheet for manufacturing semiconductor device for dividing the above-mentioned semiconductor wafers, the weight average molecular weight of the non-silicon-based resin may be, for example, any one of 80,000 or less, 60,000 or less, and 40,000 or less.

[0121] The lower limit of the weight average molecular weight of the non-silicon-based resin is not particularly limited, and for example, non-silicon-based resins having a weight average molecular weight of 5000 or more are more readily available.

[0122] The weight average molecular weight of the non-silicon resin can be appropriately adjusted within a range set by any combination of the above lower limit and any of the upper limits. For example, in one embodiment, the weight average molecular weight may be any of 5000 to 100000, 5000 to 80000, 5000 to 60000, and 5000 to 40000.

[0123] In this embodiment, "the intermediate layer contains a non-silicon-based resin having a weight average molecular weight of 100,000 or less as a main component" means "the intermediate layer contains the non-silicon-based resin in an amount sufficient to fully exert the effect of containing the non-silicon-based resin having a weight average molecular weight of 100,000 or less." From this perspective, in the intermediate layer, the ratio of the content of the non-silicon-based resin to the total mass of the intermediate layer (in other words, the ratio of the content of the non-silicon-based resin to the total content of all components other than the solvent in the composition for forming the intermediate layer) is preferably 80% by mass or more, more preferably 90% by mass or more, and may be, for example, any one of 95% by mass or more, 97% by mass or more, and 99% by mass or more. On the other hand, the proportion is 100% by mass or less.

[0124] The non-silicon-based resin having a weight average molecular weight of 100,000 or less is not particularly limited as long as it is a resin component that does not contain silicon atoms as constituent atoms and has a weight average molecular weight of 100,000 or less. The non-silicon resin may be, for example, either a polar resin having a polar group, or a non-polar resin having no polar group. For example, the non-silicon-based resin is preferably a polar resin in that it has high solubility in the intermediate layer forming composition and the intermediate layer forming composition has higher coatability.

[0125] In this specification, unless otherwise specified, the term "non-silicon-based resin" refers to the above-mentioned non-silicon-based resin having a weight average molecular weight of 100,000 or less.

[0126] The non-silicon resin may be, for example, a homopolymer that is a polymer of one type of monomer (in other words, having only one type of structural unit), or a copolymer that is a polymer of two or more types of monomers (in other words, having two or more types of structural units).

[0127] Examples of the polar group include a carbonyloxy group (-C(=O)-O-), an oxycarbonyl group (-OC(=O)-), and the like.

[0128] The polar resin may have only a constituent unit having a polar group, or may have both a constituent unit having a polar group and a constituent unit not having a polar group.

[0129] Examples of the structural unit having a polar group include a structural unit derived from vinyl acetate. Examples of the structural unit not having a polar group include a structural unit derived from ethylene.

[0130] In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all structural units is preferably 5 to 70 mass%, and may be, for example, any one of 7.5 to 55 mass% and 10 to 40 mass%. In other words, in the polar resin, the ratio of the mass of the structural unit not having a polar group to the total mass of all structural units is preferably 30 to 95 mass%, and may be, for example, any one of 45 to 92.5 mass% and 60 to 90 mass%. When the mass ratio of the structural unit having a polar group is equal to or greater than the lower limit, the polar resin has a more significant characteristic of having a polar group. When the mass ratio of the structural unit having a polar group is equal to or less than the upper limit, the polar resin has a more moderate characteristic of not having a polar group.

[0131] The polar resin may, for example, be an ethylene-vinyl acetate copolymer. Among them, preferred examples of the polar resin include those in which the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units in an ethylene-vinyl acetate copolymer (sometimes referred to as the "content of structural units derived from vinyl acetate" in this specification) is 10 to 40 mass%. In other words, preferred examples of the polar resin include those in which the ratio of the mass of structural units derived from ethylene to the total mass of all structural units in an ethylene-vinyl acetate copolymer is 60 to 90 mass%.

[0132] Examples of the non-polar resin include polyethylene (PE) such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene-catalyzed linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), and high-density polyethylene (HDPE); polypropylene (PP), and the like.

[0133] The non-silicon resin contained in the intermediate layer forming composition and the intermediate layer may be one type or two or more types, and when there are two or more types, the combination and ratio thereof can be selected arbitrarily. For example, the composition for forming an intermediate layer and the intermediate layer may contain one or more types of non-silicon-based resins that are polar resins, and may not contain any non-silicon-based resins that are non-polar resins, or may contain one or more types of non-silicon-based resins that are non-polar resins, and may not contain any non-silicon-based resins that are polar resins, or may contain one or more types of both a non-silicon-based resin that is a polar resin and a non-silicon-based resin that is a non-polar resin. The intermediate layer forming composition and the intermediate layer preferably contain at least a non-silicon based resin that is a polar resin.

[0134] In the intermediate layer forming composition and the intermediate layer, the ratio of the content of the non-silicon-based resin, which is a polar resin, to the total content of the non-silicon-based resin is preferably 80% by mass or more, more preferably 90% by mass or more, and may be, for example, any one of 95% by mass or more, 97% by mass or more, and 99% by mass or more. When the ratio is equal to or more than the lower limit, the effect of using the polar resin is more significantly obtained. On the other hand, the proportion is 100% by mass or less.

[0135] That is, in the composition for forming an intermediate layer and the intermediate layer, the ratio of the content of the non-silicon-based resin, which is a non-polar resin, to the total content of the non-silicon-based resin is preferably 20 mass% or less, more preferably 10 mass% or less, and may be, for example, any one of 5 mass% or less, 3 mass% or less, and 1 mass% or less. On the other hand, the ratio is 0% by mass or more.

[0136] In terms of ease of handling, the composition for forming the intermediate layer preferably contains a solvent in addition to the non-silicon-based resin, and may contain a component (sometimes referred to as an "additive" in this specification) that does not fall into either the category of the non-silicon-based resin or the solvent. The intermediate layer may contain only the non-silicon resin, or may contain both the non-silicon resin and the additive.

[0137] The additives may be either resin components (sometimes referred to as "other resin components" in this specification) or non-resin components.

[0138] Examples of the other resin components include non-silicon-based resins having a weight average molecular weight (Mw) of more than 100,000 (Mw>100,000) and silicon-based resins.

[0139] There are no particular limitations on the non-silicon-based resin having a weight average molecular weight of more than 100,000, so long as it satisfies these conditions.

[0140] The intermediate layer containing the silicon-based resin makes it easier to pick up the semiconductor chip with the film-like adhesive attached thereto, as described below.

[0141] The silicon-based resin is not particularly limited as long as it is a resin component having silicon atoms as constituent atoms. For example, the weight average molecular weight of the silicon-based resin is not particularly limited.

[0142] Preferred silicon-based resins include, for example, resin components that exhibit a releasing effect against pressure-sensitive adhesive components, and siloxane-based resins (resin components having a siloxane bond (-Si-O-Si-), also known as siloxane-based compounds) are more preferred.

[0143] The siloxane-based resin may, for example, be polydialkylsiloxane. The alkyl group in the polydialkylsiloxane preferably has 1 to 20 carbon atoms. In the polydialkylsiloxane, the two alkyl groups bonded to one silicon atom may be the same or different.When the two alkyl groups bonded to one silicon atom are different, the combination of these two alkyl groups is not particularly limited. The polydialkylsiloxane may, for example, be polydimethylsiloxane.

[0144] The non-resin component is not particularly limited and may be, for example, either an organic compound or an inorganic compound.

[0145] The additives contained in the intermediate layer-forming composition and the intermediate layer may be of only one type, or may be of two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily. For example, the composition for forming an intermediate layer and the intermediate layer may contain, as the additives, one or more resin components and no non-resin components, may contain one or more non-resin components and no resin components, or may contain one or more resin components and one or more non-resin components.

[0146] When the intermediate layer forming composition and the intermediate layer contain the additives, the ratio of the content of the non-silicon-based resin in the intermediate layer to the total mass of the intermediate layer (in other words, the ratio of the content of the non-silicon-based resin to the total content of all components other than the solvent in the intermediate layer forming composition) is preferably 90 to 99.99 mass%, and may be, for example, any of 90 to 97.5 mass%, 90 to 95 mass%, and 90 to 92.5 mass%, or any of 92.5 to 99.99 mass%, 95 to 99.99 mass%, and 97.5 to 99.99 mass%, or may be 92.5 to 97.5 mass%. When the intermediate layer forming composition and the intermediate layer contain the additives, the ratio of the content of the additives in the intermediate layer to the total mass of the intermediate layer (in other words, the ratio of the content of the additives to the total content of all components other than the solvent in the intermediate layer forming composition) is preferably 0.01 to 10 mass%, and may be, for example, any of 2.5 to 10 mass%, 5 to 10 mass%, and 7.5 to 10 mass%, or any of 0.01 to 7.5 mass%, 0.01 to 5 mass%, and 0.01 to 2.5 mass%, or may be 2.5 to 7.5 mass%.

[0147] The solvent contained in the composition for forming an intermediate layer is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone. The intermediate layer forming composition may contain only one type of solvent, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0148] The solvent contained in the composition for forming an intermediate layer is preferably tetrahydrofuran or the like, since the components contained in the composition for forming an intermediate layer can be mixed more uniformly.

[0149] The content of the solvent in the composition for forming an intermediate layer is not particularly limited, and may be appropriately selected depending on, for example, the types of components other than the solvent.

[0150] As described below, from the viewpoint of making it easier to pick up the semiconductor chip with the film-like adhesive, a preferred intermediate layer is, for example, one that contains an ethylene-vinyl acetate copolymer, which is the non-silicon-based resin, and a siloxane-based compound, which is the additive, and in which the ratio of the content of the ethylene-vinyl acetate copolymer (the non-silicon-based resin) to the total mass of the intermediate layer is within any of the numerical ranges described above, and the ratio of the content of the siloxane-based compound (the additive) to the total mass of the intermediate layer is within any of the numerical ranges described above. For example, such an intermediate layer may contain an ethylene-vinyl acetate copolymer, which is the non-silicon resin, and a siloxane compound, which is the additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer. However, this is one example of a preferred intermediate layer.

[0151] A more preferred intermediate layer is, for example, one in which the intermediate layer contains the non-silicon resin ethylene-vinyl acetate copolymer and the additive siloxane compound, and in which the ratio of the mass of the structural units derived from vinyl acetate to the total mass of all structural units in the ethylene-vinyl acetate copolymer (in other words, the content of the structural units derived from vinyl acetate) is 10-40% by mass, the ratio of the content of the ethylene-vinyl acetate copolymer to the total mass of the intermediate layer in the intermediate layer is 90-99.99% by mass, and the ratio of the content of the siloxane compound to the total mass of the intermediate layer in the intermediate layer is 0.01-10% by mass. However, this is just one example of a more preferred intermediate layer.

[0152] When the surface of the intermediate layer on the film-like adhesive side of the sheet for manufacturing semiconductor device (for example, first surface 13a of intermediate layer 13 in FIG. 1) is analyzed by X-ray photoelectron spectroscopy (sometimes referred to as "XPS" in this specification), the ratio of the silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon (sometimes abbreviated as "silicon concentration ratio" in this specification) is preferably 1 to 20% on a molar basis of the element. By using a sheet for manufacturing semiconductor device having such an intermediate layer, it is possible to more easily pick up a semiconductor chip with a film-like adhesive, as described below.

[0153] XPS analysis can be performed by using an X-ray photoelectron spectrometer with the film-like adhesive side of the intermediate layer as the analysis subject, setting the X-ray irradiation angle to 45°, the X-ray beam diameter to 20 μmφ, and the output to 4.5 W.

[0154] The silicon concentration ratio is calculated by the following formula: [Measured silicon concentration (atomic %) in XPS analysis] / {[Measured carbon concentration (atomic %) in XPS analysis]+[Measured oxygen concentration (atomic %) in XPS analysis]+[Measured nitrogen concentration (atomic %) in XPS analysis]+[Measured silicon concentration (atomic %) in XPS analysis]}×100 It can be calculated as follows.

[0155] In order to make such effects more pronounced, the silicon concentration may be, for example, any one of 4 to 20%, 8 to 20%, and 12 to 20%, or any one of 1 to 16%, 1 to 12%, and 1 to 8%, or any one of 4 to 16% and 8 to 12%, on a molar basis of the element.

[0156] When the XPS analysis is performed as described above, there is a possibility that other elements not corresponding to any of carbon, oxygen, nitrogen, and silicon are detected on the surface (the surface to be analyzed by XPS) of the intermediate layer. However, even if the other elements are detected, their concentrations are usually very small, so that the silicon concentration ratio can be calculated with high accuracy by using the measured values ​​of the concentrations of carbon, oxygen, nitrogen, and silicon.

[0157] The intermediate layer may consist of one layer (single layer) or may consist of two or more layers. If it consists of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited.

[0158] As explained above, the maximum width of the intermediate layer is preferably smaller than the maximum width of the pressure-sensitive adhesive layer and the maximum width of the substrate. The maximum width of the intermediate layer can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum width of the intermediate layer may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150 mm, 200 mm, or 300 mm in a direction parallel to the attachment surface of the semiconductor device manufacturing sheet. However, as explained above, when the film-like adhesive is cut by expanding the semiconductor device manufacturing sheet after dicing accompanied by the formation of a modified layer in the semiconductor wafer, the semiconductor chips (semiconductor chip group) after dicing are grouped together and the semiconductor chip manufacturing sheet is attached to these semiconductor chips as described below.

[0159] In this specification, unless otherwise specified, the "width of the intermediate layer" means, for example, the "width of the intermediate layer in a direction parallel to the first surface of the intermediate layer." For example, in the case of an intermediate layer having a circular planar shape, the maximum value of the width of the intermediate layer described above is the diameter of the circle that is the planar shape. This also applies to semiconductor wafers. That is, the "width of the semiconductor wafer" means the "width of the semiconductor wafer in a direction parallel to the surface of the semiconductor wafer attached to the sheet for manufacturing semiconductor device." For example, in the case of a semiconductor wafer having a circular planar shape, the maximum value of the width of the semiconductor wafer is the diameter of the circle that is the planar shape.

[0160] The maximum width of the intermediate layer of 150 to 160 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 150 mm by not exceeding 10 mm. Similarly, the maximum width of the intermediate layer of 200 to 210 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 200 mm by not exceeding 10 mm. Similarly, the maximum width of the intermediate layer of 300 to 310 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 300 mm by not exceeding 10 mm. That is, in this embodiment, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer may be, for example, 0 to 10 mm, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm.

[0161] The thickness of the intermediate layer can be appropriately selected depending on the purpose, but is preferably 5 to 150 μm, more preferably 5 to 120 μm, and may be, for example, any one of 10 to 90 μm and 10 to 60 μm, or any one of 30 to 120 μm and 60 to 120 μm. When the thickness of the intermediate layer is equal to or greater than the lower limit, the structure of the intermediate layer is more stable. When the thickness of the intermediate layer is equal to or less than the upper limit, the film-like adhesive can be cut more easily during blade dicing and the expanding of the semiconductor device manufacturing sheet. Here, "the thickness of the intermediate layer" means the thickness of the entire intermediate layer. For example, the thickness of an intermediate layer consisting of multiple layers means the total thickness of all layers that make up the intermediate layer.

[0162] When the intermediate layer contains the silicon-based resin, particularly when the compatibility between the silicon-based resin and the non-silicon-based resin, which is the main component, is low, the silicon-based resin in the intermediate layer in the sheet for manufacturing semiconductor device is likely to be unevenly distributed on both sides (the first side and the opposite side) of the intermediate layer and the areas nearby. The stronger this tendency is, the easier it is for the film-like adhesive adjacent to (in direct contact with) the intermediate layer to peel off from the intermediate layer, and as described below, the easier it is to pick up the semiconductor chip with the film-like adhesive. For example, when comparing intermediate layers that are different from each other only in thickness and are the same in other respects such as composition and the area of ​​both sides, the ratio (mass %) of the content of the silicon-based resin to the total mass of the intermediate layers is the same for these intermediate layers. However, the content (mass parts) of the silicon-based resin in the intermediate layer is greater in the thick intermediate layer than in the thin intermediate layer. Therefore, when the silicon-based resin is likely to be unevenly distributed in the intermediate layer as described above, the thick intermediate layer will have a greater amount of silicon-based resin unevenly distributed on both sides (the first surface and the surface opposite thereto) and the adjacent areas than the thin intermediate layer. Therefore, even without changing the ratio, it is possible to adjust the pick-up suitability of the semiconductor chip with the film-like adhesive by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing sheet. For example, by increasing the thickness of the intermediate layer in the semiconductor device manufacturing sheet, the semiconductor chip with the film-like adhesive can be picked up more easily.

[0163] ○Film adhesive The film-like adhesive has a curing property, preferably a thermosetting property, and preferably a pressure-sensitive adhesive property. A film-like adhesive having both a thermosetting property and a pressure-sensitive adhesive property can be applied to various adherends by lightly pressing it against the adherend in an uncured state. The film-like adhesive may also be one that can be applied to various adherends by heating and softening it. The film-like adhesive finally becomes a cured product with high impact resistance by curing, and this cured product can retain sufficient adhesive properties even under harsh conditions of high temperature and high humidity.

[0164] When the sheet for manufacturing semiconductor device is viewed from above in a plan view, it is preferable that the area of ​​the film-like adhesive (i.e., the area of ​​the first surface) is set smaller than the area of ​​the base material (i.e., the area of ​​the first surface) and the area of ​​the adhesive layer (i.e., the area of ​​the first surface) so as to be close to the area of ​​the semiconductor wafer before division. In such a sheet for manufacturing semiconductor device, a part of the first surface of the adhesive layer has an area (i.e., the non-laminated area) that is not in contact with the intermediate layer and the film-like adhesive. This makes it easier to expand the sheet for manufacturing semiconductor device, and since the force applied to the film-like adhesive during expansion is not dispersed, the film-like adhesive can be cut more easily.

[0165] The film-like adhesive can be formed using an adhesive composition containing the constituent materials thereof. For example, the adhesive composition can be applied to a surface on which the film-like adhesive is to be formed, and then dried as necessary to form the film-like adhesive at the desired site.

[0166] In the film-like adhesive, the proportion of the total content of one or more components contained in the film-like adhesive, which will be described later, relative to the total mass of the film-like adhesive does not exceed 100 mass %. Similarly, in the adhesive composition, the proportion of the total content of one or more components contained in the adhesive composition, which will be described later, relative to the total mass of the adhesive composition does not exceed 100 mass %.

[0167] The adhesive composition can be applied in the same manner as in the application of the pressure-sensitive adhesive composition described above.

[0168] The drying conditions for the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, it is preferable to heat-dry it, and in this case, it is preferable to dry it under conditions of, for example, 70 to 130° C. for 10 seconds to 5 minutes.

[0169] The film-like adhesive may consist of one layer (single layer) or may consist of two or more layers. If it consists of multiple layers, these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited.

[0170] As explained above, the maximum width of the film-like adhesive is preferably smaller than the maximum width of the pressure-sensitive adhesive layer and the maximum width of the substrate. The maximum width of the film adhesive may be the same as the maximum width of the intermediate layer described above with respect to the size of the semiconductor wafer. That is, the maximum width of the film-like adhesive can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum width of the film-like adhesive may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width in a direction parallel to the attachment surface with the semiconductor device manufacturing sheet of 150 mm, 200 mm, or 300 mm.

[0171] In this specification, unless otherwise specified, the "width of the film-like adhesive" means, for example, "the width of the film-like adhesive in a direction parallel to the first surface of the film-like adhesive." For example, in the case of a film-like adhesive having a circular planar shape, the maximum value of the width of the film-like adhesive described above is the diameter of the circle that is the planar shape. Furthermore, unless otherwise specified, the "width of the film-like adhesive" does not mean the width of the film-like adhesive after cutting during the manufacturing process of semiconductor chips with film-like adhesive described below, but rather the "width of the film-like adhesive before cutting (uncut)."

[0172] The maximum width of the film-like adhesive of 150 to 160 mm means that it is equal to or larger than the maximum width of a semiconductor wafer of 150 mm by not exceeding 10 mm. Similarly, the maximum width of the film-like adhesive of 200 to 210 mm means that it is equal to or larger than the maximum width of a semiconductor wafer of 200 mm by not exceeding 10 mm. Similarly, the maximum width of the film-like adhesive of 300 to 310 mm means that it is equal to or larger than the maximum width of a semiconductor wafer of 300 mm by not exceeding 10 mm. That is, in this embodiment, the difference between the maximum width of the film-like adhesive and the maximum width of the semiconductor wafer may be, for example, 0 to 10 mm, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm.

[0173] In this embodiment, the maximum width of the intermediate layer and the maximum width of the film-like adhesive may both be within any of the above-mentioned numerical ranges. That is, an example of the sheet for manufacturing a semiconductor device of this embodiment is one in which the maximum width of the intermediate layer and the maximum width of the film-like adhesive are both 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm.

[0174] The thickness of the film-like adhesive is not particularly limited, but is preferably 1 to 30 μm, more preferably 2 to 20 μm, and particularly preferably 3 to 10 μm. When the thickness of the film-like adhesive is equal to or greater than the lower limit, a higher adhesive strength to the adherend (semiconductor chip) can be obtained. When the thickness of the film-like adhesive is equal to or less than the upper limit, the film-like adhesive can be cut more easily during blade dicing and the expansion of the semiconductor device manufacturing sheet. Here, "thickness of the film-like adhesive" means the thickness of the entire film-like adhesive; for example, the thickness of a film-like adhesive consisting of multiple layers means the total thickness of all layers that make up the film-like adhesive. Next, the adhesive composition will be described.

[0175] <<Adhesive composition>> A preferred adhesive composition includes, for example, one containing a polymer component (a) and a thermosetting component (b). Each component will be described below. The adhesive composition shown below is a preferred example, and the adhesive composition in this embodiment is not limited to the one shown below.

[0176] [Polymer component (a)] The polymer component (a) is a component that can be considered to be formed by a polymerization reaction of a polymerizable compound, and is a polymer compound that imparts film-forming properties, flexibility, etc. to the film-like adhesive and improves adhesion (in other words, stickability) to an adhesion target such as a semiconductor chip. The polymer component (a) has thermoplasticity and does not have thermosetting properties. In this specification, the polymer compound also includes the product of a polycondensation reaction.

[0177] The adhesive composition and film-like adhesive may contain only one type of polymer component (a), or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0178] Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, and saturated polyester resins. Of these, the polymer component (a) is preferably an acrylic resin.

[0179] In the adhesive composition, the proportion of the content of polymer component (a) relative to the total content of all components other than the solvent (i.e., the proportion of the content of polymer component (a) in the film adhesive relative to the total mass of the film adhesive) is preferably 20 to 75 mass%, more preferably 30 to 65 mass%.

[0180] [Thermosetting component (b)] The thermosetting component (b) has thermosetting properties and is a component for thermally curing the film-like adhesive. The thermosetting component (b) contained in the adhesive composition and film-like adhesive may be one type, or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0181] Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins. Among these, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

[0182] 〇Epoxy thermosetting resin The epoxy thermosetting resin is composed of an epoxy resin (b1) and a thermosetting agent (b2). The adhesive composition and the film-like adhesive may contain only one type of epoxy thermosetting resin, or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0183] Epoxy resin (b1) The epoxy resin (b1) may be any known substance, such as a polyfunctional epoxy resin, a biphenyl compound, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolac epoxy resin, a dicyclopentadiene type epoxy resin, a biphenyl type epoxy resin, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, or a phenylene skeleton type epoxy resin.

[0184] As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group may be used. The epoxy resin having an unsaturated hydrocarbon group has a higher compatibility with the acrylic resin than the epoxy resin not having an unsaturated hydrocarbon group. Therefore, by using the epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained by using the film-like adhesive is improved.

[0185] The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be one type, or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0186] ·Heat hardener (b2) The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1). The thermosetting agent (b2) may be, for example, a compound having two or more functional groups capable of reacting with an epoxy group in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and an anhydride group of an acid group, and the like. The phenolic hydroxyl group, the amino group, or an anhydride group of an acid group is preferable, and the phenolic hydroxyl group or the amino group is more preferable.

[0187] Among the heat curing agents (b2), examples of phenolic curing agents having a phenolic hydroxyl group include polyfunctional phenolic resins, biphenols, novolac-type phenolic resins, dicyclopentadiene-type phenolic resins, and aralkyl-type phenolic resins. Among the heat curing agents (b2), examples of amine-based curing agents having an amino group include dicyandiamide (DICY) and the like.

[0188] The heat curing agent (b2) may have an unsaturated hydrocarbon group.

[0189] The adhesive composition and film-like adhesive may contain only one type of thermosetting agent (b2), or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0190] In the adhesive composition and the film-like adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, and may be, for example, any one of 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass, relative to 100 parts by mass of the epoxy resin (b1). When the content of the thermosetting agent (b2) is equal to or greater than the lower limit, the curing of the film-like adhesive proceeds more easily. When the content of the thermosetting agent (b2) is equal to or less than the upper limit, the moisture absorption rate of the film-like adhesive is reduced, and the reliability of the package obtained using the film-like adhesive is further improved.

[0191] In the adhesive composition and film-like adhesive, the content of the thermosetting component (b) (e.g., the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and particularly preferably 5 to 50 parts by mass, per 100 parts by mass of the polymer component (a), and may be, for example, any of 5 to 35 parts by mass and 5 to 20 parts by mass. When the content of the thermosetting component (b) is within such a range, the peel force between the intermediate layer and the film-like adhesive becomes more stable.

[0192] In order to improve various physical properties of the film-like adhesive, the adhesive composition and the film-like adhesive may contain, in addition to the polymer component (a) and the thermosetting component (b), other components not falling under these categories, as necessary. Preferred examples of other components contained in the adhesive composition and the film-like adhesive include a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), an energy ray-curable resin (g), a photopolymerization initiator (h), and a general-purpose additive (i).

[0193] [Cure accelerator (c)] The curing accelerator (c) is a component for adjusting the curing speed of the adhesive composition. Preferred examples of the curing accelerator (c) include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are substituted with organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate.

[0194] The adhesive composition and film-like adhesive may contain only one type of curing accelerator (c), or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0195] When the curing accelerator (c) is used, the content of the curing accelerator (c) in the adhesive composition and the film-like adhesive is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the thermosetting component (b). When the content of the curing accelerator (c) is equal to or greater than the lower limit, the effect of using the curing accelerator (c) is more pronounced. When the content of the curing accelerator (c) is equal to or less than the upper limit, for example, the effect of suppressing the highly polar curing accelerator (c) from migrating to the adhesive interface with the adherend and segregating in the film-like adhesive under high temperature and high humidity conditions is enhanced, and the reliability of the package obtained using the film-like adhesive is further improved.

[0196] [Filler (d)] By including the filler (d), the cuttability of the film adhesive by expansion is improved. Furthermore, by including the filler (d), the thermal expansion coefficient of the film adhesive can be easily adjusted, and by optimizing this thermal expansion coefficient for the object to which the film adhesive is applied, the reliability of the package obtained using the film adhesive is improved. Furthermore, by including the filler (d) in the film adhesive, it is possible to reduce the moisture absorption rate of the film adhesive after curing and improve the heat dissipation properties.

[0197] The filler (d) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler. Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride, and the like; beads obtained by spheronizing these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, and the like. Among these, the inorganic filler is preferably silica or alumina.

[0198] The adhesive composition and film-like adhesive may contain only one type of filler (d), or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0199] When the filler (d) is used, the ratio of the content of the filler (d) to the total content of all components other than the solvent in the adhesive composition (i.e., the ratio of the content of the filler (d) to the total mass of the film-like adhesive in the film-like adhesive) is preferably 5 to 80 mass%, more preferably 10 to 70 mass%, and particularly preferably 20 to 60 mass%. By having the ratio in such a range, the effect of using the filler (d) can be obtained more significantly.

[0200] [Coupling agent (e)] The film adhesive contains a coupling agent (e) to improve its adhesion and adhesion to the adherend. In addition, the film adhesive contains a coupling agent (e) to improve the water resistance of the cured product without impairing the heat resistance. The coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.

[0201] The coupling agent (e) is preferably a compound having a functional group capable of reacting with the functional groups of the polymer component (a), the thermosetting component (b), etc., and is more preferably a silane coupling agent.

[0202] The coupling agent (e) contained in the adhesive composition and the film-like adhesive may be one type, or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0203] When a coupling agent (e) is used, the content of the coupling agent (e) in the adhesive composition and the film-like adhesive is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b). When the content of the coupling agent (e) is equal to or greater than the lower limit, the effects of using the coupling agent (e), such as improved dispersibility of the filler (d) in the resin and improved adhesion of the film-like adhesive to the adherend, can be more significantly obtained. When the content of the coupling agent (e) is equal to or less than the upper limit, the generation of outgassing is more suppressed.

[0204] [Crosslinking agent (f)] When the polymer component (a) is one having a functional group capable of bonding with other compounds, such as a vinyl group, (meth)acryloyl group, amino group, hydroxyl group, carboxyl group, isocyanate group, etc., such as the above-mentioned acrylic resin, the adhesive composition and film-like adhesive may contain a crosslinking agent (f). The crosslinking agent (f) is a component for bonding the functional group in the polymer component (a) with other compounds to crosslink them, and by crosslinking in this way, the initial adhesive strength and cohesive strength of the film-like adhesive can be adjusted.

[0205] Examples of the crosslinking agent (f) include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridinyl group).

[0206] When an organic polyisocyanate compound is used as the crosslinking agent (f), it is preferable to use a hydroxyl group-containing polymer as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinked structure can be easily introduced into the film-like adhesive by the reaction between the crosslinking agent (f) and the polymer component (a).

[0207] The crosslinking agent (f) contained in the adhesive composition and film-like adhesive may be one type, or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0208] When the crosslinking agent (f) is used, the content of the crosslinking agent (f) in the adhesive composition is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass, per 100 parts by mass of the polymer component (a). When the content of the crosslinking agent (f) is equal to or greater than the lower limit, the effect of using the crosslinking agent (f) is more pronounced. When the content of the crosslinking agent (f) is equal to or less than the upper limit, excessive use of the crosslinking agent (f) is suppressed.

[0209] [Energy ray curable resin (g)] By containing the energy ray-curable resin (g) in the adhesive composition and film-like adhesive, the properties of the film-like adhesive can be changed by irradiation with energy rays.

[0210] The energy ray curable resin (g) is obtained from an energy ray curable compound. The energy ray-curable compound includes, for example, a compound having at least one polymerizable double bond in the molecule, and is preferably an acrylate-based compound having a (meth)acryloyl group.

[0211] The adhesive composition may contain only one type of energy ray-curable resin (g), or may contain two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0212] When an energy ray curable resin (g) is used, the content of the energy ray curable resin (g) in the adhesive composition relative to the total mass of the adhesive composition is preferably 1 to 95 mass%, more preferably 5 to 90 mass%, and particularly preferably 10 to 85 mass%.

[0213] [Photopolymerization initiator (h)] When the adhesive composition and the film-like adhesive contain an energy ray-curable resin (g), they may contain a photopolymerization initiator (h) in order to efficiently proceed with the polymerization reaction of the energy ray-curable resin (g).

[0214] Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; and acylphosphines such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide. Oxide compounds; sulfide compounds such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzyl; dibenzyl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone, etc. Examples of the photopolymerization initiator (h) include photosensitizers such as amines.

[0215] The adhesive composition may contain only one type of photopolymerization initiator (h), or may contain two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0216] When a photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) in the adhesive composition is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass, per 100 parts by mass of the energy ray-curable resin (g).

[0217] [General purpose additives (i)] The general-purpose additive (i) may be a known one and may be arbitrarily selected depending on the purpose, and is not particularly limited. Preferred examples thereof include plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), gettering agents, and the like.

[0218] The adhesive composition and the film-like adhesive may contain only one type of general-purpose additive (i), or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily. The contents of the adhesive composition and the film-like adhesive are not particularly limited and may be appropriately selected depending on the purpose.

[0219] [solvent] The adhesive composition preferably further contains a solvent. An adhesive composition containing a solvent has good handleability. The solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone. The adhesive composition may contain only one type of solvent, or two or more types. When there are two or more types, the combination and ratio of the solvents can be selected arbitrarily.

[0220] The solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like, since this allows the components contained in the adhesive composition to be mixed more uniformly.

[0221] The content of the solvent in the adhesive composition is not particularly limited and may be appropriately selected depending on, for example, the types of components other than the solvent.

[0222] <<Method of manufacturing adhesive composition>> The adhesive composition can be obtained by blending the respective components constituting the adhesive composition. The adhesive composition can be produced, for example, in the same manner as in the case of the pressure-sensitive adhesive composition described above, except that the types of ingredients used are different.

[0223] ◇ Manufacturing method of sheets for manufacturing semiconductor device The semiconductor device manufacturing sheet can be manufactured by laminating the above-mentioned layers in a corresponding positional relationship. The method of forming each layer is as described above.

[0224] For example, the semiconductor device manufacturing sheet can be manufactured by preparing the base material, pressure-sensitive adhesive layer, intermediate layer and film-like adhesive in advance, and laminating these in the following order: base material, pressure-sensitive adhesive layer, intermediate layer and film-like adhesive. However, this is just one example of a method for producing a sheet for manufacturing a semiconductor device.

[0225] The semiconductor device manufacturing sheet can also be manufactured, for example, by preparing two or more intermediate laminates in advance, each having a structure in which a plurality of layers are laminated, and bonding these intermediate laminates together. The structure of the intermediate laminate can be selected as appropriate. For example, a first intermediate laminate (corresponding to the support sheet) having a structure in which a base material and an adhesive layer are laminated, and a second intermediate laminate having a structure in which an intermediate layer and a film-like adhesive are laminated are prepared in advance, and the adhesive layer in the first intermediate laminate and the intermediate layer in the second intermediate laminate are bonded together to manufacture the semiconductor device manufacturing sheet. However, this is also just one example of the method for producing a sheet for producing semiconductor device.

[0226] When the sheet for manufacturing a semiconductor device is manufactured as shown in Fig. 1, in which the area of ​​the first side of the intermediate layer and the area of ​​the first side of the film-like adhesive are both smaller than the areas of the first side of the pressure-sensitive adhesive layer and the first side of the base material, a step of processing the intermediate layer and the film-like adhesive to a desired size may be added at any stage of the above-mentioned manufacturing method. For example, in the manufacturing method using the second intermediate laminate, a sheet for manufacturing a semiconductor device may be manufactured by adding a step of processing the intermediate layer and the film-like adhesive in the second intermediate laminate to a desired size.

[0227] When manufacturing a sheet for manufacturing semiconductor device having a release film on the film-like adhesive, for example, the film-like adhesive may be prepared on the release film, and the remaining layers may be laminated while maintaining this state to produce the sheet for manufacturing semiconductor device, or the base material, pressure-sensitive adhesive layer, intermediate layer, and film-like adhesive may all be laminated, and then the release film may be laminated on the film-like adhesive to produce the sheet for manufacturing semiconductor device. The release film may be removed at a necessary stage before the sheet for manufacturing semiconductor device is used.

[0228] A sheet for manufacturing a semiconductor device that has another layer that does not fall into any of the following categories: a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, and a release film, can be manufactured by adding a step of forming and laminating this other layer at an appropriate time in the above-mentioned manufacturing method.

[0229] A preferred example of the sheet for manufacturing a semiconductor device according to the present embodiment includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material, The intermediate layer contains, as a main component, a non-silicon resin having a weight average molecular weight of 100,000 or less, the intermediate layer contains at least a polar resin as the non-silicon-based resin, the intermediate layer has a content of the non-silicon-based resin relative to a total mass of the intermediate layer of any one of 80% by mass or more, 90% by mass or more, 95% by mass or more, 97% by mass or more, and 99% by mass or more; In the intermediate layer, the ratio of the content of the non-silicon-based resin that is the polar resin to the total content of the non-silicon-based resin is any one of 80 mass% or more, 90 mass% or more, 95 mass% or more, 97 mass% or more, and 99 mass% or more; In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all structural units is any one of 5 to 70 mass%, 7.5 to 55 mass%, and 10 to 40 mass%.

[0230] Another preferred example of the sheet for manufacturing a semiconductor device according to the present embodiment includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material, The intermediate layer contains, as a main component, a non-silicon resin having a weight average molecular weight of 100,000 or less, the intermediate layer contains at least a polar resin as the non-silicon-based resin, the intermediate layer has a content of the non-silicon-based resin relative to a total mass of the intermediate layer of any one of 80% by mass or more, 90% by mass or more, 95% by mass or more, 97% by mass or more, and 99% by mass or more; In the intermediate layer, the ratio of the content of the non-silicon-based resin that is the polar resin to the total content of the non-silicon-based resin is any one of 80 mass% or more, 90 mass% or more, 95 mass% or more, 97 mass% or more, and 99 mass% or more; In the polar resin, the ratio of the mass of a structural unit having a polar group to the total mass of all structural units is any one of 5 to 70 mass%, 7.5 to 55 mass%, and 10 to 40 mass%, Examples of the sheet for manufacturing semiconductor device include a sheet in which, when the surface of the intermediate layer facing the film-like adhesive is analyzed by X-ray photoelectron spectroscopy, the ratio of the silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon is any of 1 to 20%, 4 to 16%, and 8 to 12%.

[0231] Yet another example of a preferable sheet for manufacturing a semiconductor device according to the present embodiment includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material, The intermediate layer contains a non-silicon-based resin having a weight average molecular weight of 100,000 or less as a main component, and further contains a silicon-based resin; the intermediate layer contains at least a polar resin as the non-silicon-based resin, the intermediate layer contains the non-silicon-based resin in an amount of 90 to 99.99 mass%, 90 to 97.5 mass%, 90 to 95 mass%, or 90 to 92.5 mass% relative to the total mass of the intermediate layer; In the intermediate layer, a content ratio of the silicon-based resin relative to a total mass of the intermediate layer is any one of 0.01 to 10 mass%, 2.5 to 10 mass%, 5 to 10 mass%, and 7.5 to 10 mass%, However, in the intermediate layer, the ratio of the total content of the non-silicon-based resin and the silicon-based resin to the total mass of the intermediate layer does not exceed 100 mass%, In the intermediate layer, the ratio of the content of the non-silicon-based resin that is the polar resin to the total content of the non-silicon-based resin is any one of 80 mass% or more, 90 mass% or more, 95 mass% or more, 97 mass% or more, and 99 mass% or more; In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all structural units is any one of 5 to 70 mass%, 7.5 to 55 mass%, and 10 to 40 mass%.

[0232] Yet another example of a preferable sheet for manufacturing a semiconductor device according to the present embodiment includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material, The intermediate layer contains a non-silicon-based resin having a weight average molecular weight of 100,000 or less as a main component, and further contains a silicon-based resin; the intermediate layer contains at least a polar resin as the non-silicon-based resin, the intermediate layer contains the non-silicon-based resin in an amount of 90 to 99.99 mass%, 90 to 97.5 mass%, 90 to 95 mass%, or 90 to 92.5 mass% relative to the total mass of the intermediate layer; In the intermediate layer, a content ratio of the silicon-based resin relative to a total mass of the intermediate layer is any one of 0.01 to 10 mass%, 2.5 to 10 mass%, 5 to 10 mass%, and 7.5 to 10 mass%, However, in the intermediate layer, the ratio of the total content of the non-silicon-based resin and the silicon-based resin to the total mass of the intermediate layer does not exceed 100 mass%, In the intermediate layer, the ratio of the content of the non-silicon-based resin that is the polar resin to the total content of the non-silicon-based resin is any one of 80 mass% or more, 90 mass% or more, 95 mass% or more, 97 mass% or more, and 99 mass% or more; In the polar resin, the ratio of the mass of a structural unit having a polar group to the total mass of all structural units is any one of 5 to 70 mass%, 7.5 to 55 mass%, and 10 to 40 mass%, The thickness of the intermediate layer is any one of 5 to 150 μm, 5 to 120 μm, 30 to 120 μm, and 60 to 120 μm.

[0233] ◇Method of using semiconductor device manufacturing sheets (method of manufacturing semiconductor chips with film-like adhesive) The sheet for manufacturing a semiconductor device can be used when manufacturing a semiconductor chip with a film-like adhesive in the process of manufacturing a semiconductor device. Hereinafter, a method for using the sheet for manufacturing semiconductor device (a method for manufacturing a semiconductor chip with a film-like adhesive) will be described in detail with reference to the drawings.

[0234] 3A, 3B, and 3C are cross-sectional views for explaining an example of a method of using the semiconductor device manufacturing sheet, and show a case where the semiconductor device manufacturing sheet is attached to a semiconductor wafer and then used. In this method, the semiconductor device manufacturing sheet is used as a dicing die bonding sheet. Here, the method of use will be explained by taking the semiconductor device manufacturing sheet 101 shown in FIG. 1 as an example.

[0235] First, as shown in FIG. 3A, sheet 101 for manufacturing semiconductor device from which release film 15 has been removed is heated, and film-like adhesive 14 therein is attached to rear surface 9b' of semiconductor wafer 9'. Reference numeral 9a' denotes a surface of the semiconductor wafer 9' on which circuits are formed.

[0236] The heating temperature during application of the semiconductor device manufacturing sheet 101 is not particularly limited, but is preferably 40 to 70° C. in order to further improve the thermal application stability of the semiconductor device manufacturing sheet 101 .

[0237] Width W of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 13 and the width W of the film adhesive 14 14 The maximum value of each of these is the width W of the semiconductor wafer 9'. 9’ It is either exactly the same as the maximum value of , or, although not the same, the error is minor and it is almost the same.

[0238] For example, the width W of the semiconductor wafer 9′ 9’ When the maximum value of is 150 mm, the width W of the intermediate layer 13 13 and the width W of the film adhesive 14 14 The maximum value of is preferably 150 to 160 mm, and the width W of the semiconductor wafer 9' is 9’ When the maximum value of is 200 mm, the width W of the intermediate layer 13 13and the width W of the film adhesive 14 14 The maximum value of is preferably 200 to 210 mm, and the width W of the semiconductor wafer 9' is 9’ When the maximum value of is 300 mm, the width W of the intermediate layer 13 13 and the width W of the film adhesive 14 14 The maximum value is preferably 300 to 310 mm. Thus, in this embodiment, the width W of the intermediate layer 13 13 and the width W of the semiconductor wafer 9' 9’ The difference between the maximum value of and the width W of the film adhesive 14 14 and the width W of the semiconductor wafer 9' 9’ The maximum value of and the difference between may be 0 to 10 mm. Here, the width W of the semiconductor wafer 9′ 9’ For example, it means the width of a semiconductor wafer 9' in a direction parallel to its back surface 9b'.

[0239] Next, the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' obtained above is cut with a blade from the circuit forming surface 9a' side of the semiconductor wafer 9' (blade dicing is performed) to divide the semiconductor wafer 9' and cut the film-like adhesive 14.

[0240] Blade dicing can be performed by a known method. For example, the region (the non-laminated region) near the periphery of the first surface 12a of the pressure-sensitive adhesive layer 12 in the sheet 101 for manufacturing a semiconductor device, where the intermediate layer 13 and the film-like adhesive 14 are not laminated, can be fixed to a jig such as a ring frame (not shown), and then the semiconductor wafer 9' can be divided and the film-like adhesive 14 can be cut using a blade.

[0241] 3B, a plurality of semiconductor chips 914 with a film-like adhesive are obtained, each of which includes a semiconductor chip 9 and a cut film-like adhesive 140 provided on its back surface 9b. These semiconductor chips 914 with a film-like adhesive are aligned and fixed on the intermediate layer 13 in the laminated sheet 10, constituting a group 910 of semiconductor chips with a film-like adhesive. A back surface 9b of the semiconductor chip 9 corresponds to a back surface 9b' of the semiconductor wafer 9'. In addition, in Fig. 3B, reference numeral 9a denotes a circuit formation surface of the semiconductor chip 9, which corresponds to a circuit formation surface 9a' of the semiconductor wafer 9'.

[0242] During blade dicing, the semiconductor wafer 9' is divided by cutting into it across its entire thickness, and the semiconductor device manufacturing sheet 101 is cut into the film-like adhesive 14 across its entire thickness by cutting from the first surface 14a of the film-like adhesive 14 to the area halfway through the intermediate layer 13, preferably without cutting into the pressure-sensitive adhesive layer 12. That is, during blade dicing, it is preferable that the blade cuts into the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' in the stacking direction from the circuit formation surface 9a' of the semiconductor wafer 9' to at least the first surface 13a of the intermediate layer 13, but not to the surface opposite the first surface 13a of the intermediate layer 13 (i.e., the contact surface with the adhesive layer 12).

[0243] In this process, it is easy to prevent the blade from reaching the substrate 11, thereby suppressing the generation of cutting chips from the substrate 11. Furthermore, since the main component of the intermediate layer 13 cut by the blade is a non-silicon resin having a weight average molecular weight of 100,000 or less, and in particular, since the weight average molecular weight is 100,000 or less, the generation of cutting chips from the intermediate layer 13 can also be suppressed.

[0244] The conditions for the blade dicing may be appropriately adjusted depending on the purpose, and are not particularly limited. In general, the rotation speed of the blade is preferably 15,000 to 50,000 rpm, and the movement speed of the blade is preferably 5 to 75 mm / sec.

[0245] After blade dicing, the semiconductor chip 914 with the film-like adhesive is detached from the intermediate layer 13 in the laminated sheet 10 and picked up, as shown in Fig. 3C. Here, the case where the semiconductor chip 914 with the film-like adhesive is detached in the direction of arrow P using detachment means 7 such as a vacuum collet is shown. Note that the detachment means 7 is not shown in cross section here. The semiconductor chip 914 with the film-like adhesive attached can be picked up by a known method.

[0246] When the silicon concentration on the first surface 13a of the intermediate layer 13 is between 1 and 20%, the semiconductor chip 914 with the film adhesive can be picked up more easily. When the intermediate layer 13 contains, for example, an ethylene-vinyl acetate copolymer which is the non-silicon-based resin and a siloxane-based compound which is the additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90 to 99.99 mass%, and the content of the siloxane-based compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01 to 10 mass%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.

[0247] A preferred embodiment of the method for producing a semiconductor chip with a film-like adhesive described above is, for example, a method for producing a semiconductor chip with a film-like adhesive, the method comprising: a semiconductor chip; and a film-like adhesive provided on the back surface of the semiconductor chip, The sheet for manufacturing a semiconductor device includes the base material, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, The manufacturing method includes the steps of: heating the semiconductor device manufacturing sheet while attaching the film-like adhesive therein to the back surface of the semiconductor wafer; cutting the semiconductor wafer to which the film-like adhesive has been attached across its entire thickness from the circuit formation side and dividing it to produce the semiconductor chips; cutting the semiconductor device manufacturing sheet in its thickness direction from the film-like adhesive side to a region halfway through the intermediate layer to cut the film-like adhesive, but not cutting into the pressure-sensitive adhesive layer, thereby obtaining a group of semiconductor chips with film-like adhesive in which a plurality of semiconductor chips with film-like adhesive are aligned on the intermediate layer; and separating the semiconductor chips with film-like adhesive from the intermediate layer and picking them up (sometimes referred to in this specification as "manufacturing method 1").

[0248] Figures 4A, 4B, and 4C are cross-sectional views for illustrating an example of a method for manufacturing semiconductor chips for which a semiconductor device manufacturing sheet is used, and show the case where semiconductor chips are manufactured by dicing a semiconductor wafer, which involves the formation of a modified layer. 5A, 5B, and 5C are cross-sectional views for explaining another example of a method of using the semiconductor device manufacturing sheet, and show a case where the semiconductor device manufacturing sheet is attached to a semiconductor chip before use. In this method, the semiconductor device manufacturing sheet is used as a die bonding sheet. Here, the method of use will be explained by taking the semiconductor device manufacturing sheet 101 shown in FIG. 1 as an example.

[0249] First, prior to using the sheet 101 for manufacturing semiconductor device, as shown in FIG. 4A, a semiconductor wafer 9' is prepared, and a backgrind tape (sometimes called a "surface protection tape") 8 is attached to its circuit formation surface 9a'. In FIG. 4A, symbol W 9’ indicates the width of the semiconductor wafer 9'.

[0250] Next, a laser beam (not shown) is irradiated so as to be focused at a focal point set inside the semiconductor wafer 9', thereby forming a modified layer 90' inside the semiconductor wafer 9' as shown in FIG. 4B. The laser light is preferably applied to the semiconductor wafer 9' from the back surface 9b' side of the semiconductor wafer 9'.

[0251] The position of the focus at this time is the planned dividing (dicing) position of the semiconductor wafer 9', and is set so that the desired size, shape and number of semiconductor chips can be obtained from the semiconductor wafer 9'.

[0252] Next, a grinder (not shown) is used to grind the back surface 9b' of the semiconductor wafer 9'. This adjusts the thickness of the semiconductor wafer 9' to a desired value, and the grinding force applied to the semiconductor wafer 9' at this time is used to divide the semiconductor wafer 9' at the portion where the modified layer 90' is formed, to produce a plurality of semiconductor chips 9 as shown in FIG. 4C.

[0253] The modified layer 90' of the semiconductor wafer 9' is different from other parts of the semiconductor wafer 9' in that it has been altered by the irradiation of the laser light and has a weakened strength. Therefore, when a force is applied to the semiconductor wafer 9' on which the modified layer 90' has been formed, the force is applied to the modified layer 90', and the semiconductor wafer 9' is cracked at the site of the modified layer 90', and a plurality of semiconductor chips 9 are obtained.

[0254] By the above steps, semiconductor chips 9 are obtained, which are the targets of use of semiconductor device manufacturing sheet 101. More specifically, this process produces semiconductor chip group 901 in which a plurality of semiconductor chips 9 are aligned and fixed on backgrind tape 8.

[0255] When semiconductor chip group 901 is viewed from above in a planar view, the planar shape formed by connecting the outermost portions of semiconductor chip group 901 (in this specification, such a planar shape may be simply referred to as the "planar shape of the semiconductor chip group") is exactly the same as the planar shape of semiconductor wafer 9' when viewed in a similar planar view, or the differences between these planar shapes are so minor that they can be ignored, and it can be said that the planar shape of semiconductor chip group 901 is generally the same as the planar shape of semiconductor wafer 9'. Therefore, the width of the planar shape of the semiconductor chip group 901 is, as shown in FIG. 4C, the width W 9’ The maximum width of the planar shape of the semiconductor chip group 901 is equal to the width W of the semiconductor wafer 9′. 9’ can be considered to be the same as the maximum value of

[0256] Note that, here, we show a case where semiconductor chips 9 can be produced as intended from the semiconductor wafer 9'; however, depending on the conditions for grinding the back surface 9b' of the semiconductor wafer 9', some areas of the semiconductor wafer 9' may not be divided into semiconductor chips 9.

[0257] Next, the semiconductor chips 9 (semiconductor chip group 901) obtained above are used to manufacture semiconductor chips with a film-like adhesive. 5A, one semiconductor device manufacturing sheet 101 from which release film 15 has been removed is heated and film-like adhesive 14 therein is attached to the back surfaces 9b of all the semiconductor chips 9 in semiconductor chip group 901. The object to which film-like adhesive 14 is attached at this time may be a semiconductor wafer that has not been completely divided.

[0258] Width W of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 13 and the width W of the film adhesive 14 14 The maximum value of each of these is the width W of the semiconductor wafer 9'. 9’(in other words, the width of the semiconductor chip group 901) or, although not the same, the error is slight and the result is approximately the same.

[0259] That is, the width W of the intermediate layer 13 13 The relationship between the maximum value of and the maximum width of the semiconductor chip group 901 is determined by the width W 13 and the width W of the semiconductor wafer 9' 9’ The relationship between the maximum value of and the width W of the film adhesive 14 may be the same as that of. 14 and the maximum width of the semiconductor chip group 901, the relationship between the maximum value of 14 and the width W of the semiconductor wafer 9' 9’ The relationship between the maximum value of and may be the same as that between.

[0260] At this time, the attachment of the film-like adhesive 14 (sheet 101 for manufacturing a semiconductor device) to the semiconductor chip group 901 can be carried out in the same manner as the attachment of the film-like adhesive 14 (sheet 101 for manufacturing a semiconductor device) to the semiconductor wafer 9' in the manufacturing method 1, except that the semiconductor chip group 901 is used instead of the semiconductor wafer 9'.

[0261] Next, the backgrind tape 8 is removed from the semiconductor chip group 901 in this fixed state. Then, as shown in FIG. 5B, the semiconductor device manufacturing sheet 101 is expanded by being stretched in a direction parallel to its surface (for example, the first surface 12a of the adhesive layer 12) while being cooled. Here, the expanding direction of the semiconductor device manufacturing sheet 101 is indicated by an arrow E1. By expanding in this manner, the film-like adhesive 14 is cut along the outer periphery of the semiconductor chip 9.

[0262] This process produces a plurality of semiconductor chips 914 with a film-like adhesive, each of which includes a semiconductor chip 9 and a cut film-like adhesive 140 provided on the back surface 9b of the semiconductor chip 9. These semiconductor chips 914 with a film-like adhesive are aligned and fixed on the intermediate layer 13 in the laminated sheet 10, constituting a group 910 of semiconductor chips with a film-like adhesive. The semiconductor chip 914 with film-like adhesive and the group of semiconductor chips 910 with film-like adhesive obtained here are both substantially the same as the semiconductor chip 914 with film-like adhesive and the group of semiconductor chips 910 with film-like adhesive obtained by the manufacturing method 1 described above.

[0263] As explained above, if a portion of the semiconductor wafer 9' is not divided into semiconductor chips 9 when the semiconductor wafer 9' is divided, this portion will be divided into semiconductor chips by performing this process.

[0264] It is preferable that semiconductor device manufacturing sheet 101 is expanded at a temperature of −5 to 5° C. By cooling and expanding semiconductor device manufacturing sheet 101 in this manner (performing cool expansion), film-like adhesive 14 can be cut more easily and with higher accuracy.

[0265] The semiconductor device manufacturing sheet 101 can be expanded by a known method. For example, the semiconductor device manufacturing sheet 101 can be expanded by fixing a region (the non-laminated region) near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are not laminated to a jig such as a ring frame (not shown), and then pushing up the entire region of the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are laminated from the base material 11 side in a direction from the base material 11 toward the adhesive layer 12.

[0266] In Figure 5B, the non-laminated region of the first surface 12a of the adhesive layer 12, where the intermediate layer 13 and the film-like adhesive 14 are not laminated, is approximately parallel to the first surface 13a of the intermediate layer 13. However, as described above, when the semiconductor device manufacturing sheet 101 is expanded by being pushed up, the non-laminated region includes an inclined surface whose height decreases in the opposite direction to the pushing-up direction as it approaches the outer periphery of the adhesive layer 12.

[0267] In this process, since the semiconductor device manufacturing sheet 101 has an intermediate layer 13 (in other words, the film-like adhesive 14 before cutting is provided on the intermediate layer 13), the film-like adhesive 14 can be cut precisely at the desired location (in other words, along the outer periphery of the semiconductor chip 9), thereby preventing poor cutting.

[0268] After the expansion, as shown in FIG. 5C, the semiconductor chip 914 with the film-like adhesive attached is separated from the intermediate layer 13 in the laminated sheet 10 and picked up. The pick-up at this time can be performed in the same manner as the pick-up in the manufacturing method 1 described above, and the pick-up suitability is also the same as that in the manufacturing method 1.

[0269] For example, in this step too, when the silicon concentration ratio on the first surface 13a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film adhesive can be picked up more easily. Furthermore, when the intermediate layer 13 contains, for example, an ethylene-vinyl acetate copolymer which is the non-silicon resin and a siloxane-based compound which is the additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90 to 99.99 mass%, and the content of the siloxane-based compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01 to 10 mass%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.

[0270] A preferred embodiment of the method for producing a semiconductor chip with a film-like adhesive described above is, for example, a method for producing a semiconductor chip with a film-like adhesive, the method comprising: a semiconductor chip; and a film-like adhesive provided on the back surface of the semiconductor chip, The sheet for manufacturing a semiconductor device includes the base material, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, The manufacturing method includes the steps of forming a modified layer inside the semiconductor wafer by irradiating laser light so as to be focused on a focal point set inside the semiconductor wafer; grinding the back surface of the semiconductor wafer after the modified layer is formed, and dividing the semiconductor wafer at the formation site of the modified layer by utilizing the force applied to the semiconductor wafer during grinding to obtain a group of semiconductor chips in a state in which the semiconductor chips are aligned; attaching the film-like adhesive therein to the back surfaces of all of the semiconductor chips in the group of semiconductor chips while heating the semiconductor device manufacturing sheet; cutting the film-like adhesive along the periphery of the semiconductor chips by stretching the semiconductor device manufacturing sheet after being attached to the semiconductor chips in a direction parallel to the surface while cooling, thereby obtaining a group of semiconductor chips with a film-like adhesive in a state in which the semiconductor chips with the film-like adhesive are aligned on the intermediate layer; and separating the semiconductor chips with the film-like adhesive from the intermediate layer and picking them up (sometimes referred to in this specification as "manufacturing method 2").

[0271] Up to this point, in both the manufacturing method 1 and the manufacturing method 2, the usage method has been described using the semiconductor device manufacturing sheet 101 shown in Fig. 1 as an example, but other semiconductor device manufacturing sheets according to this embodiment can also be used in the same way. In that case, the semiconductor device manufacturing sheet may be used by appropriately adding other steps based on the difference in configuration between this semiconductor device manufacturing sheet and the semiconductor device manufacturing sheet 101, as necessary.

[0272] Not limited to the cases of manufacturing method 1 and manufacturing method 2, after obtaining the group of semiconductor chips with film-like adhesive, before picking up the semiconductor chips with film-like adhesive, the laminated sheet may be expanded in a direction parallel to the surface (first surface) of the pressure-sensitive adhesive layer facing the intermediate layer, and further, while maintaining this state, the peripheral portion of the laminated sheet on which the semiconductor chips with film-like adhesive (group of semiconductor chips with film-like adhesive) are not placed may be heated. In this way, the distance between adjacent semiconductor chips, i.e., the kerf width, can be maintained sufficiently wide and highly uniform on the laminated sheet while the peripheral portion is shrunk, and the semiconductor chips with the film-like adhesive attached can be picked up more easily. EXAMPLES

[0273] The present invention will be described in more detail below with reference to specific examples, although the present invention is not limited to the following examples.

[0274] <<Raw materials for manufacturing adhesive composition>> The raw materials used in producing the adhesive composition are shown below. [Polymer component (a)] (a)-1: An acrylic resin (weight average molecular weight: 800,000, glass transition temperature: 9° C.) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass). [Epoxy resin (b1)] (b1)-1: Cresol novolac type epoxy resin to which an acryloyl group has been added ("CNA147" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 518g / eq, number average molecular weight 2100, unsaturated group content equal to that of epoxy groups). [Thermal hardener (b2)] (b2)-1: Aralkyl-type phenolic resin (Mitsui Chemicals, Inc., "Milex XLC-4L", number average molecular weight 1100, softening point 63°C) [Filler (d)] (d)-1: Spherical silica ("YA050C-MJE" manufactured by Admatechs Co., Ltd., average particle size 50 nm, methacrylsilane-treated product) [Coupling agent (e)] (e)-1: Silane coupling agent, 3-glycidoxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Silicone Co., Ltd.) [Crosslinking agent (f)] (f)-1: Tolylene diisocyanate crosslinking agent ("Coronate L" manufactured by Tosoh Corporation)

[0275] [Example 1] <<Manufacturing of sheets for manufacturing semiconductor devices>> <Production of substrate> Low-density polyethylene (LDPE, "Sumikathene L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted using an extruder, the molten material was extruded using the T-die method, and the extrudate was biaxially stretched using a cooling roll to obtain an LDPE substrate (thickness 110 μm).

[0276] <Preparation of adhesive layer> A non-energy ray curable adhesive composition was produced containing an acrylic resin (Olivine BPS 6367X, manufactured by Toyochem Co., Ltd.) (100 parts by mass) as an adhesive resin (I-1a) and a crosslinking agent (BXX 5640, manufactured by Toyochem Co., Ltd.) (1 part by mass).

[0277] Next, a release film made of polyethylene terephthalate on one side of which a release treatment had been performed by silicone treatment was used, and the adhesive composition obtained above was applied to the release-treated surface, followed by heating and drying at 100°C for 2 minutes to produce a non-energy ray-curable adhesive layer (thickness 10 μm).

[0278] <Preparation of intermediate layer> At room temperature, ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 30,000, content of structural units derived from vinyl acetate 25% by mass) (15 g) was dissolved in 85 g of tetrahydrofuran, and a siloxane-based compound (polydimethylsiloxane, "BYK-333" manufactured by BYK Japan, number of structural units represented by the formula "-Si(-CH3)2-O-" in one molecule is 45 to 230) (1.5 g) was added to the resulting solution and stirred to prepare a composition for forming an intermediate layer.

[0279] A release film made of polyethylene terephthalate on one side of which a release treatment had been performed by silicone treatment was used, and the composition for forming an intermediate layer obtained above was applied to the release-treated surface, followed by heating and drying at 70°C for 5 minutes to produce an intermediate layer (thickness 20 μm).

[0280] <Preparation of film adhesive> A thermosetting adhesive composition was produced containing polymer component (a)-1 (100 parts by mass), epoxy resin (b1)-1 (10 parts by mass), thermosetting agent (b2)-1 (1.5 parts by mass), filler (d)-1 (75 parts by mass), coupling agent (e)-1 (0.5 parts by mass), and crosslinking agent (f)-1 (0.5 parts by mass).

[0281] Next, a release film made of polyethylene terephthalate, one side of which had been treated for release by silicone treatment, was used, and the adhesive composition obtained above was applied to the release-treated surface, followed by heating and drying at 80°C for 2 minutes to produce a thermosetting film-like adhesive (thickness 7 μm).

[0282] <Production of Sheets for Manufacturing Semiconductor Device> The exposed surface of the adhesive layer obtained above, opposite the side having the release film, was bonded to one surface of the substrate obtained above to produce a first intermediate laminate with a release film (in other words, a support sheet with a release film). The exposed surface of the film-like adhesive obtained above, opposite the side having the release film, was bonded to the exposed surface of the intermediate layer obtained above, opposite the side having the release film, to produce a second intermediate laminate with a release film (a laminate of a release film, an intermediate layer, a film-like adhesive and a release film).

[0283] Next, this second intermediate laminate with release film was punched out using a cutting blade from the release film on the intermediate layer side to the film-like adhesive, and unnecessary portions were removed to produce a second intermediate laminate with release film, which was composed of a film-like adhesive (thickness 7 μm) with a circular planar shape (diameter 305 mm), an intermediate layer (thickness 20 μm), and a release film laminated in this order in the thickness direction on the release film on the film-like adhesive side.

[0284] Next, the release film was removed from the first intermediate laminate with the release film obtained above to expose one surface of the pressure-sensitive adhesive layer. Furthermore, the circular release film was removed from the second intermediate laminate workpiece with the release film obtained above to expose one surface of the intermediate layer. Next, the newly exposed surface of the adhesive layer in the first intermediate laminate was attached to the newly exposed surface of the intermediate layer in the second intermediate laminate product. The substrate and adhesive layer (i.e., the support sheet) in the laminate thus obtained were punched from the substrate side using a cutting blade (diameter 370 mm) to remove unnecessary portions so that the planar shape of these (the support sheet) was circular (diameter 370 mm) and concentric with the circular film-like adhesive and intermediate layer (diameter 305 mm). As a result of the above, a sheet for manufacturing semiconductor device with a release film was obtained, which was composed of a substrate (thickness 110 μm), an adhesive layer (thickness 10 μm), an intermediate layer (thickness 20 μm), a film-like adhesive (thickness 7 μm) and a release film laminated in this order in the thickness direction.

[0285] <<Evaluation of sheets for manufacturing semiconductor devices>> <Calculation of silicon concentration on the film adhesive side of the intermediate layer> In the manufacturing process of the above-mentioned semiconductor device manufacturing sheet, the exposed surface of the intermediate layer before being bonded to the adhesive layer was analyzed by XPS to measure the concentrations (atomic %) of carbon (C), oxygen (O), nitrogen (N) and silicon (Si). From the measured values, the percentage of silicon concentration relative to the total concentration of carbon, oxygen, nitrogen and silicon was calculated. The XPS analysis was performed using an X-ray photoelectron spectrometer (ULVAC, "Quantra SXM") under conditions of an irradiation angle of 45°, an X-ray beam diameter of 20 μmφ, and an output of 4.5 W. The results are shown in the "Percentage of element concentration in intermediate layer (%)" column in Table 1, together with the percentages of concentration (%) of other elements.

[0286] <Evaluation of the effect of suppressing the generation of cutting debris during blade dicing> [Manufacturing groups of silicon chips with film-like adhesive] The release film was removed from the sheet for manufacturing a semiconductor device obtained above. A silicon wafer (diameter 300 mm, thickness 75 μm) whose back surface had been polished by dry polishing was used, and the above-mentioned sheet for manufacturing semiconductor device was attached to the back surface (polished surface) of the wafer using a tape mounter ("Adwill RAD2500" manufactured by Lintec Corporation) with the film-like adhesive while heating to 60° C. This resulted in a laminate (a laminate formed by laminating the laminate sheet, film-like adhesive, and silicon wafer in this order in the thickness direction) constituted by the substrate, adhesive layer, intermediate layer, film-like adhesive, and silicon wafer.

[0287] Next, the area (the non-laminated area) near the periphery of the first surface of the pressure-sensitive adhesive layer in the laminate where no intermediate layer was provided was fixed to a ring frame for wafer dicing. Next, the silicon wafer was divided by dicing using a dicing device (DISCO Corporation's "DFD6361"), and the film-like adhesive was also cut to obtain silicon chips measuring 8 mm x 8 mm. The dicing was performed by setting the blade rotation speed to 30,000 rpm and the blade movement speed to 30 mm / sec, and cutting the semiconductor device manufacturing sheet from the surface of the film-like adhesive attached to the silicon wafer to the intermediate region of the intermediate layer (i.e., the entire region of the film-like adhesive in the thickness direction and the intermediate layer from the surface of the film-like adhesive side to the intermediate region). The blade used was DISCO Corporation's "Z05-SD2000-D1-90 CC." As a result of the above, a group of silicon chips with film-like adhesive was obtained, in which a large number of silicon chips with film-like adhesive, each of which had a silicon chip and a cut film-like adhesive applied to its back surface, were aligned and fixed on the intermediate layer in the laminated sheet by the film-like adhesive therein.

[0288] [Evaluation of the effect of suppressing the generation of cutting debris] Using a digital microscope (Keyence Corp. "VH-Z100"), the silicon chips with film-like adhesive obtained above were observed from above the silicon chip side to check for the presence or absence of cutting debris. If no cutting debris was generated at all, it was judged as "A", and if even a small amount of cutting debris was generated, it was judged as "B". The results are shown in Table 1.

[0289] <Evaluation of cuttability of film adhesive during expansion> [Manufacturing groups of silicon chips with film-like adhesive] A silicon wafer having a circular planar shape, a diameter of 300 mm, and a thickness of 775 μm was used, and a backgrind tape ("Adwill E-3100TN" manufactured by Lintec Corporation) was attached to one surface of the wafer. Next, a laser beam was irradiated using a laser beam irradiation device (DISCO Corporation, "DFL73161") so as to be focused on a focal point set inside the silicon wafer, thereby forming a modified layer inside the silicon wafer. At this time, the focal point was set so that a large number of silicon chips measuring 8 mm x 8 mm were obtained from the silicon wafer. The laser beam was irradiated from the other side of the silicon wafer (the side on which the backgrind tape was not attached). Next, the other surface of the silicon wafer was ground with a grinder to a thickness of 30 μm, and the grinding force applied to the silicon wafer at this time was used to divide the silicon wafer at the portion where the modified layer was formed, to produce a plurality of silicon chips. As a result, a group of silicon chips was obtained in which a plurality of silicon chips were aligned and fixed on the backgrind tape.

[0290] Next, using a tape mounter ("Adwill RAD2500" manufactured by Lintec Corporation), one of the semiconductor device manufacturing sheets obtained above was heated to 60°C and the film-like adhesive contained therein was attached to the other surface (in other words, the ground surface) of all of the silicon chips (silicon chip group). Next, the area (the non-laminated area) near the periphery where no intermediate layer was provided on the first surface of the adhesive layer in the semiconductor device manufacturing sheet after it had been attached to the group of silicon chips was fixed to a ring frame for wafer dicing.

[0291] Next, the backgrind tape was removed from the group of silicon chips in this fixed state. Then, using a fully automatic die separator (Disco's "DDS2300"), the sheet for manufacturing semiconductor device was expanded in a direction parallel to its surface while cooling it in an environment of 0°C, thereby cutting the film-like adhesive along the periphery of the silicon chip. At this time, the peripheral portion of the sheet for manufacturing semiconductor device was fixed, and the entire area where the intermediate layer and the film-like adhesive of the sheet for manufacturing semiconductor device were laminated was pushed up by a height of 15 mm from the substrate side, thereby expanding it. This resulted in a group of silicon chips with film-like adhesive, in which a plurality of silicon chips with film-like adhesive, each of which had a silicon chip and a cut film-like adhesive applied to the other surface (ground surface) of the silicon chip, were aligned and fixed on the intermediate layer.

[0292] Next, the sheet for manufacturing semiconductor device was once released from expansion, and then the laminate (i.e., the laminate sheet) consisting of the base material, the adhesive layer, and the intermediate layer was expanded in a direction parallel to the first surface of the adhesive layer at room temperature. Furthermore, while maintaining this expanded state, the peripheral portion of the laminate sheet on which the silicon chip with the film-like adhesive was not placed was heated. As a result, the kerf width between adjacent silicon chips on the laminate sheet was maintained at a certain value or more while the peripheral portion was contracted.

[0293] [Evaluation of the cuttability of film adhesives] During the manufacturing of the silicon chip group with the film-like adhesive described above, the silicon chip group with the film-like adhesive obtained above was observed from above the silicon chip side using a digital microscope (Keyence Corporation "VH-Z100"). Then, among the multiple cut lines of the film-like adhesive extending in one direction that should be formed if the film-like adhesive is normally cut by expanding the semiconductor device manufacturing sheet, and the multiple cut lines of the film-like adhesive extending in a direction perpendicular to this direction, the number of cut lines that were not actually formed and the number of cut lines that were incompletely formed were confirmed, and the cuttability of the film-like adhesive was evaluated according to the following evaluation criteria. The results are shown in Table 1. (Evaluation Criteria) A: The total number of cut lines in the film-like adhesive that are not actually formed and cut lines in the film-like adhesive that are incompletely formed is 5 or less. B: The total number of cut lines in the film-like adhesive that are not actually formed and cut lines in the film-like adhesive that are incompletely formed is 6 or more.

[0294] <Evaluation of pick-up ability of silicon chip with film-like adhesive after expansion> After the evaluation of the cuttability of the film-like adhesive described above, the silicon chips with film-like adhesive were picked up from the intermediate layer in the laminated sheet using a die bonding device ("PU100" manufactured by Fasford Technology) under conditions of a push-up height of 250 μm, a push-up speed of 5 mm / s, and a push-up time of 500 ms. If all the silicon chips with film-like adhesive were successfully picked up, they were evaluated as "A", and if one or more silicon chips with film-like adhesive could not be successfully picked up, they were evaluated as "B". The results are shown in Table 1.

[0295] <Measurement of T-peel strength between intermediate layer and film-like adhesive> The release film was removed from the sheet for manufacturing a semiconductor device obtained above. The entire exposed surface of the film-like adhesive in the semiconductor device manufacturing sheet thus produced was bonded to the adhesive surface of an adhesive tape having a polyethylene terephthalate layer ("PET50(A) PL Shin 8LK" manufactured by Lintec Corporation), and the resulting laminate was cut into a size of 50 mm x 100 mm to prepare a test specimen. In accordance with JIS K6854-3, the laminate of the substrate, the adhesive layer and the intermediate layer (i.e., the laminate sheet) was peeled off from the laminate of the film-like adhesive and the adhesive tape, so that the test piece was peeled off in a T-shape, and the maximum peel force (mN / 50mm) measured at this time was used as the T-shape peel strength. At this time, the peel speed was 50mm / min. The results are shown in Table 1.

[0296] <<Production and evaluation of sheets for manufacturing semiconductor devices>> [Example 2] A sheet for manufacturing a semiconductor device was produced and evaluated in the same manner as in Example 1, except that the coating amount of the composition for forming the intermediate layer was increased and the thickness of the intermediate layer was changed from 20 μm to 80 μm, and the results are shown in Table 1.

[0297] [Example 3] A sheet for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Example 1, except that, when preparing the composition for forming an intermediate layer, the siloxane compound was not added, and the amount of the ethylene-vinyl acetate copolymer used was changed from 15 g to 16.5 g (in other words, the siloxane compound was replaced with the same mass of the ethylene-vinyl acetate copolymer, and only the ethylene-vinyl acetate copolymer was dissolved in tetrahydrofuran). The results are shown in Table 1. In Table 1, a "-" in the column for additives means that the additive was not used.

[0298] [Comparative Example 1] A sheet for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Example 1, except that, when preparing the composition for forming an intermediate layer, the ethylene-vinyl acetate copolymer was replaced with the same mass of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 200,000, content of structural units derived from vinyl acetate 25% by mass), and the coating amount of the composition for forming an intermediate layer was increased to change the thickness of the intermediate layer to 80 μm instead of 20 μm. The results are shown in Table 1.

[0299] [Comparative Example 2] A sheet for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Example 1, except that the ethylene-vinyl acetate copolymer was replaced with the same mass of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 200,000, content of structural units derived from vinyl acetate 25% by mass) when preparing the composition for forming an intermediate layer. The results are shown in Table 1.

[0300] [Table 1]

[0301] As is clear from the above results, in Examples 1 to 3, the generation of cutting debris was suppressed during blade dicing, and poor cutting of the film-like adhesive was suppressed during expansion, demonstrating excellent suitability for dividing semiconductor wafers. In Examples 1 to 3, the weight average molecular weight of the ethylene-vinyl acetate copolymer contained as the main component in the intermediate layer in the sheet for manufacturing semiconductor device was 30,000.

[0302] In addition, in Examples 1 to 3, the content of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer was 90.9 mass% or more, and the content of the siloxane-based compound relative to the total mass of the intermediate layer was 9.1 mass% or less.

[0303] Furthermore, in Examples 1 and 2, the pick-up properties of the silicon chip with the film-like adhesive after expansion were also excellent. In Examples 1 and 2, the T-peel strength between the intermediate layer and the film-like adhesive was 100 mN / 50 mm or less, which was appropriately low, and the silicon concentration in the intermediate layer was 9%, which was appropriately high. These evaluation results were consistent with the evaluation results of the pick-up properties of the silicon chip with the film-like adhesive described above. In Example 3, the intermediate layer in the sheet for manufacturing a semiconductor device did not contain the siloxane-based compound.

[0304] The difference between the semiconductor device manufacturing sheets of Examples 1 and 2 is only the thickness of the intermediate layer, but the semiconductor device manufacturing sheet of Example 2 has a smaller T-shaped peel strength between the intermediate layer and the film-like adhesive than the semiconductor device manufacturing sheet of Example 1, and picking up a silicon chip with a film-like adhesive is easier in Example 2 than in Example 1. This is presumably because, even if the ratio (mass%) of the content of the siloxane-based compound in the intermediate layer to the total mass of the intermediate layer is the same in the semiconductor device manufacturing sheets of Examples 1 and 2, the content (parts by mass) of the siloxane-based compound in the intermediate layer is greater in Example 2 than in Example 1, and furthermore, since the siloxane-based compound is likely to be unevenly distributed on both sides of the intermediate layer and in the areas nearby the intermediate layer, the amount of the siloxane-based compound unevenly distributed on both sides of the intermediate layer and in the areas nearby the intermediate layer is also greater in Example 2 than in Example 1.

[0305] In Examples 1 to 3, no nitrogen was detected in the XPS analysis of the exposed surface of the intermediate layer.

[0306] In contrast to this, in Comparative Examples 1 and 2, the generation of cutting waste during blade dicing was not suppressed, and the suitability for dividing the semiconductor wafer was poor. In Comparative Examples 1 and 2, the weight average molecular weight of the ethylene-vinyl acetate copolymer contained as the main component in the intermediate layer in the sheet for manufacturing semiconductor device was 200,000.

[0307] The only difference between the semiconductor device manufacturing sheets of Comparative Examples 1 and 2 was the thickness of the intermediate layer, and the relationship between the T-peel strength between the intermediate layer and the film-like adhesive in Comparative Examples 1 and 2 showed a similar tendency to that in Examples 1 and 2. In Comparative Examples 1 and 2, too, no nitrogen was detected in the XPS analysis of the exposed surface of the intermediate layer. [Industrial Applicability]

[0308] The present invention can be used in the manufacture of semiconductor devices. [Explanation of symbols]

[0309] 101: Sheet for manufacturing semiconductor device; 11: Base material; 12: Adhesive layer; 13: Intermediate layer; 13a: First surface of intermediate layer; 14: Film-like adhesive

Claims

1. A sheet for manufacturing a semiconductor device comprising a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, the sheet for manufacturing a semiconductor device is configured by laminating the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive in this order on the base material, the intermediate layer contains as a main component a non-silicon-based resin having a weight average molecular weight of 100,000 or less, A sheet for manufacturing semiconductor device, wherein when the surface of the intermediate layer facing the film-like adhesive is analyzed by X-ray photoelectron spectroscopy, the ratio of the concentration of silicon to the total concentration of carbon, oxygen, nitrogen and silicon is 1 to 20%.

2. A sheet for manufacturing a semiconductor device comprising a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, the sheet for manufacturing a semiconductor device is configured by laminating the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive in this order on the base material, the intermediate layer contains as a main component a non-silicon-based resin having a weight average molecular weight of 100,000 or less, the intermediate layer contains an ethylene-vinyl acetate copolymer, which is the non-silicon-based resin, and a siloxane-based compound; In the ethylene-vinyl acetate copolymer, the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units is 10 to 40 mass%, the intermediate layer has an ethylene-vinyl acetate copolymer content of 90 to 99.99% by mass relative to the total mass of the intermediate layer; The sheet for manufacturing semiconductor device, wherein the intermediate layer contains the siloxane compound in an amount of 0.01 to 10 mass % relative to the total mass of the intermediate layer.

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