Sensors and inspection devices

Abstract

To provide a sensor and inspection equipment that can improve characteristics.SOLUTION: According to an embodiment, a sensor includes first and second magnetic regions, first and second opposing magnetic regions, first and second elements, a conductive member, and first and second terminals. The conductive member includes a first conductive region and a second conductive region. The first conductive region includes a first conductive portion corresponding to a first portion of the first element and a first other conductive portion corresponding to a first other portion of the first element. The second conductive region includes a second conductive portion corresponding to a second portion of the second element and a second other conductive portion corresponding to a second other portion of the second element. The first other conducting portion is continuous with the second conducting portion. The first terminal is electrically connected to the first other conducting portion and the second conducting portion. The second terminal is electrically connected to the first other conducting portion and the second other conducting portion.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to sensors and inspection devices.

Background Art

[0002] For example, there is a sensor using a magnetic layer. In the sensor, improvement in characteristics is desired.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a sensor and an inspection device capable of improving characteristics.

Means for Solving the Problems

[0006] [Figure 1] Figure 1 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 2] Figure 2 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 3] Figures 3(a) and 3(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. [Figure 4] Figure 4 is a schematic diagram illustrating the characteristics of the sensor according to the first embodiment. [Figure 5] Figure 5 is a schematic plan view illustrating a sensor related to a reference example. [Figure 6] Figure 6 is a graph illustrating the characteristics of the sensor. [Figure 7] Figures 7(a) and 7(b) are schematic plan views illustrating a part of the sensor according to the first embodiment. [Figure 8] Figure 8 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 9] Figure 9 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 10] Figure 10 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 11] Figure 11 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 12] Figures 12(a) and 12(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. [Figure 13] Figures 13(a) and 13(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. [Figure 14] Figures 14(a) and 14(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. [Figure 15] Figures 15(a) and 15(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. [Figure 16] Figures 16(a) and 16(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. [Figure 17] Figure 17 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 18] FIG. 18 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 19] FIG. 19 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 20] FIG. 20 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 21] FIG. 21 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 22] FIG. 22 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 23] FIG. 23 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 24] FIG. 24 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 25] FIGS. 25(a) and 25(b) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 26] FIG. 26 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 27] FIG. 27 is a schematic diagram showing the inspection apparatus according to the second embodiment. [Figure 28] FIG. 28 is a schematic perspective view showing the inspection apparatus according to the second embodiment. [Figure 29] FIG. 29 is a schematic plan view showing the inspection apparatus according to the second embodiment. [[ID=3V6]] [Figure 30] FIG. 30 is a schematic diagram showing the sensor and the inspection apparatus according to the embodiment. [Figure 31] FIG. 31 is a schematic diagram showing the inspection apparatus according to the embodiment.

MODE FOR CARRYING OUT THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may differ between drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals with respect to previously shown figures, and detailed explanations are omitted as appropriate.

[0008] (First Embodiment) Figures 1 and 2 are schematic plan views illustrating a sensor according to the first embodiment. Figures 3(a) and 3(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. Figure 3(a) is a cross-sectional view taken along the line E1-E2 in Figure 1. Figure 3(b) is a cross-sectional view taken along the line F1-F2 in Figure 1.

[0009] As shown in Figure 1, the sensor 110 according to this embodiment includes an element section 10E. The element section 10E includes a first magnetic region 51, a first opposing magnetic region 51A, a first element 11, a second magnetic region 52, a second opposing magnetic region 52A, a second element 12, a third element 13, a fourth element 14, a conductive member 20, a first terminal 25A, and a second terminal 25B.

[0010] The first opposing magnetic region 51A moves away from the first magnetic region 51 in the first direction D1 from the first magnetic region 51 to the first opposing magnetic region 51A.

[0011] The first direction D1 is defined as the X-axis direction. One direction perpendicular to the X-axis direction is defined as the Y-axis direction. The direction perpendicular to both the X-axis and Y-axis directions is defined as the Z-axis direction.

[0012] As shown in Figure 3(a), the first element 11 includes a first magnetic layer 11a and a first opposing magnetic layer 11b. The first element 11 is a magnetic element. The first element 11 may include a first non-magnetic layer 11n. The first non-magnetic layer 11n is provided between the first magnetic layer 11a and the first opposing magnetic layer 11b. The first non-magnetic layer 11n includes, for example, Cu. The first element 11 is, for example, a GMR (Giant Magnetoresistive effect) element.

[0013] The position of at least a portion of the first element 11 in the first direction D1 is between the position of the first magnetic region 51 in the first direction D1 and the position of the first opposing magnetic region 51A in the first direction D1.

[0014] As shown in Figure 3(a), a region 51S exists between the first magnetic region 51 and the first opposing magnetic region 51A. In the Z-axis direction, at least a portion of the first element 11 overlaps with region 51S. As will be described later, a portion of the first element 11 may also overlap with the first magnetic region 51 in the Z-axis direction. As will be described later, a portion of the first element 11 may also overlap with the first opposing magnetic region 51A in the Z-axis direction.

[0015] As shown in Figure 3(a), an insulating member 81 may be provided between the first magnetic region 51, the first opposing magnetic region 51A, the first element 11, and the third element 13. An insulating member 81 may be provided in region 51S.

[0016] As shown in Figure 3(a), in this example, the first element 11 is separated from the first magnetic region 51 and the first opposing magnetic region 51A in the third direction D3. The third direction D3 intersects the plane containing the first direction D1 and the second direction D2.

[0017] As shown in Figure 1, the first element 11 includes a first portion 11e and a first other portion 11f. The second direction D2 from the first portion 11e to the first other portion 11f intersects the first direction D1. The second direction D2 is, for example, the Y-axis direction.

[0018] The direction from the first magnetic region 51 to the second magnetic region 52 is along the second direction D2. The second magnetic region 52 may be separate from the first magnetic region 51. The second magnetic region 52 may be continuous with the first magnetic region 51. If the second magnetic region 52 is continuous with the first magnetic region 51, the boundary between these regions may be clear or unclear.

[0019] The second opposing magnetic region 52A separates from the second magnetic region 52 in the first direction D1. The direction from the first opposing magnetic region 51A to the second opposing magnetic region 52A is along the second direction D2. The second opposing magnetic region 52A may be separate from the first opposing magnetic region 51A. The second opposing magnetic region 52A may be continuous with the first opposing magnetic region 51A. If the second opposing magnetic region 52A is continuous with the first opposing magnetic region 51A, the boundary between these regions may be clear or unclear.

[0020] As shown in Figure 3(b), the second element 12 includes a second magnetic layer 12a and a second counter magnetic layer 12b. The second element 12 is a magnetic element. The second element 12 may include a second non-magnetic layer 12n. The second non-magnetic layer 12n is provided between the second magnetic layer 12a and the second counter magnetic layer 12b. The second non-magnetic layer 12n includes, for example, Cu. The second element 12 is, for example, a GMR element.

[0021] The position of at least a portion of the second element 12 in the first direction D1 lies between the position of the second magnetic region 52 in the first direction D1 and the position of the second opposing magnetic region 52A in the first direction D1.

[0022] As shown in Figure 3(b), a region 52S exists between the second magnetic region 52 and the second opposing magnetic region 52A. In the Z-axis direction, at least a portion of the second element 12 overlaps with region 52S. As will be described later, a portion of the second element 12 may also overlap with the second magnetic region 52 in the Z-axis direction. As will be described later, a portion of the second element 12 may also overlap with the second opposing magnetic region 52A in the Z-axis direction.

[0023] As shown in Figure 3(b), an insulating member 81 may be provided between the second magnetic region 52, the second opposing magnetic region 52A, the second element 12, and the fourth element 14. An insulating member 81 may be provided in region 52S.

[0024] As shown in Figure 3(b), in this example, the second element 12 is separated from the second magnetic region 52 and the second opposing magnetic region 52A in the third direction D3.

[0025] The second element 12 includes a second portion 12e and a second other portion 12f. The direction from the second portion 12e to the second other portion 12f is along the second direction D2.

[0026] The third element 13 includes a third portion 13e and a third other portion 13f. The third portion 13e is electrically connected to the first portion 11e. The third other portion 13f is electrically connected to the second portion 12e. In this example, the third element 13 includes a third magnetic layer 13a.

[0027] The fourth element 14 includes a fourth portion 14e and a fourth other portion 14f. The fourth portion 14e is electrically connected to the first other portion 11f. The fourth other portion 14f is electrically connected to the second other portion 12f. In this example, the fourth element 14 includes a fourth magnetic layer 14a.

[0028] For example, wiring 78a electrically connects the third part 13e to the first part 11e. Wiring 78b electrically connects the third other part 13f to the second part 12e. Wiring 78c electrically connects the fourth part 14e to the first other part 11f. Wiring 78d electrically connects the fourth other part 14f to the second other part 12f.

[0029] As described above, the element section 10E includes four elements. The four elements are connected in a bridge configuration. This bridge configuration enables detection with higher accuracy.

[0030] The target magnetic field Hs (see Figure 1) is collected by the first magnetic region 51 and the first opposing magnetic region 51A. The collected target magnetic field Hs is efficiently applied to the first element 11. The target magnetic field Hs is collected by the second magnetic region 52 and the second opposing magnetic region 52A. The collected target magnetic field Hs is efficiently applied to the second element 12. The magnetic regions and opposing magnetic regions function as an MFC (Magnetic Flux Concentrator).

[0031] The electrical resistance of the first element 11 and the electrical resistance of the second element 12 can be changed according to the magnetic field (detectable magnetic field Hs) around the element section 10E. 。

[0032] On the other hand, the magnetic field collected by the MFC is not substantially applied to the third element 13 and the fourth element 14. The electrical resistance of the third element 13 and the electrical resistance of the fourth element 14 do not substantially change even when the magnetic field around the element section 10E (detectable magnetic field Hs) changes. The change in the electrical resistance of the third element 13 with respect to the detectable magnetic field Hs, and the change in the electrical resistance of the fourth element 14 with respect to the detectable magnetic field Hs are smaller than the change in the electrical resistance of the first element 11 with respect to the detectable magnetic field Hs, and are smaller than the change in the electrical resistance of the second element 12 with respect to the detectable magnetic field Hs.

[0033] This bridge circuit configuration allows for the detection of changes in the electrical resistance of the first element 11 and the electrical resistance of the second element 12. This enables the detection of the target magnetic field Hs with high accuracy.

[0034] In Figure 2, a portion of Figure 1 is extracted and depicted. As shown in Figure 2, the conductive member 20 includes a first conductive region 21 and a second conductive region 22. The first conductive region 21 includes a first conductive portion 21e corresponding to the first portion 11e and a first other conductive portion 21f corresponding to the first other portion 11f. The second conductive region 22 includes a second conductive portion 22e corresponding to the second portion 12e and a second other conductive portion 22f corresponding to the second other portion 12f. In this example, the first other conductive portion 21f is continuous with the second conductive portion 22e.

[0035] As shown in Figure 2, the first terminal 25A is electrically connected to the first non-conductive portion 21f and the second conductive portion 22e. The second terminal 25B is electrically connected to the first conductive portion 21e and the second non-conductive portion 22f.

[0036] For example, current (conductive material current Iac) is supplied between the first terminal 25A and the second terminal 25B. The conductive material current Iac includes an AC component.

[0037] As shown in Figure 1, for example, a control unit 70 may be provided. The control unit 70 may be included in the sensor 110. The control unit 70 may be provided separately from the sensor 110. The control unit 70 includes an AC circuit 73. The AC circuit 73 is capable of supplying a conductive member current Iac, which includes an AC component, to the conductive member 20 via the first terminal 25A and the second terminal 25B.

[0038] In one state (see Figure 2) when a conductive member current Iac containing an AC component is supplied to the conductive member 20, the conductive member current Iac has a direction from the first non-conductive portion 21f to the first conductive portion 21e. At this time, the conductive member current Iac has a direction from the second conductive portion 22e to the second non-conductive portion 22f.

[0039] That is, opposite-phase alternating currents flow in the first conductive region 21 and the second conductive region 22. An alternating magnetic field Hac based on the opposite-phase alternating current is applied to the first element 11 and the second element 12. Based on the alternating magnetic field Hac, the first electrical resistance of the first element 11 and the second electrical resistance of the second element 12 change. The increase or decrease in the change of electrical resistance based on the alternating magnetic field Hac is reversed in these elements. An alternating magnetic field Hac with inverted phase is applied to these elements.

[0040] In addition to the detection target magnetic field Hs, the AC magnetic field Hac is applied to the first element 11 and the second element 12. The first electrical resistance of the first element 11 and the second electrical resistance of the second element 12 change according to the detection target magnetic field Hs and the AC magnetic field Hac. An example of the change in the electrical resistance of one element is described below.

[0041] Figure 4 is a schematic diagram illustrating the characteristics of the sensor according to the first embodiment. In Figure 4, the horizontal axis represents the magnetic field H applied to the element. The vertical axis represents the signal V obtained from the element. The signal V corresponds to electrical resistance. As shown in Figure 4, the signal V (electrical resistance) obtained from the element changes in an even function with respect to the applied magnetic field H.

[0042] An alternating magnetic field Hac and a target magnetic field Hs are applied to an element having these characteristics. When the frequency of the alternating magnetic field Hac is "f", the signal V obtained from the element contains a component with a frequency of 1f and a component with a frequency of 2f. The component with a frequency of 1f is based on the target magnetic field Hs. The component with a frequency of 2f is based on the alternating magnetic field Hac.

[0043] The characteristics shown in Figure 4 occur in the first element 11 and the second element 12. At this time, as described above, the phase is inverted in the AC magnetic field Hac applied to the first element 11 and the AC magnetic field Hac applied to the second element 12. As a result, the 2f frequency component is removed from the signal V obtained from the combination of the first element 11 and the second element 12. This allows for efficient extraction of the 1f frequency component based on the target magnetic field Hs. By amplifying the 1f frequency component, a high signal strength can be easily obtained. A high signal-to-noise ratio can be obtained. According to this embodiment, a sensor capable of improving characteristics can be provided. The signal V may be the signal obtained from a bridge circuit including the first element 11 and the second element 12.

[0044] As shown in Figure 1, an element current circuit 71 and a detection circuit 72 may be provided. For example, the element current circuit 71 and the detection circuit 72 may be included in the sensor 110.

[0045] The element current circuit 71 is capable of supplying element current Ie between the first connection point CP1 of the first part 11e and the third part 13e and the second connection point CP2 of the second other part 12f and the fourth other part 14f.

[0046] The detection circuit 72 is capable of detecting the detection signal Sig1 that occurs between the third connection point CP3 of the third other part 13f and the second part 12e, and the fourth connection point CP4 of the first other part 11f and the fourth part 14e.

[0047] The element current circuit 71 and the detection circuit 72 may be included in the control unit 70, for example. The control unit 70 (for example, the detection circuit 72) outputs an output signal Sig2 based on the detection signal Sig1.

[0048] The detection circuit 72 can output an output signal Sig2 by processing the detection signal Sig1 based on the frequency of the conductive material current Iac. The detection circuit 72 can output a value corresponding to the 1f frequency component of the detection signal Sig1 as the output signal Sig2. The output signal Sig2 reflects the magnetic field Hs to be detected. The detection circuit 72 may include, for example, a filter circuit. The detection circuit 72 may include, for example, a lock-in amplifier circuit. The lock-in amplifier circuit processes the detection signal Sig1 by referring to the frequency of the conductive material current Iac.

[0049] In this embodiment, the first element 11 and the second element 12 are provided at diagonal positions of the bridge circuit. The first element 11 and the second element 12 function as detection elements. The third element 13 and the fourth element 14 are provided at other diagonal positions of the bridge circuit. The third element 13 and the fourth element 14 function as reference resistors.

[0050] In this embodiment, MFCs are provided in both the first element 11 and the second element 12, which function as detection elements. On the other hand, MFCs are not provided in the third element 13 and the fourth element 14, which function as reference resistors. This makes the element section 10E compact. For example, detection with high spatial resolution is possible.

[0051] Figure 5 is a schematic plan view illustrating a sensor related to a reference example. As shown in Figure 5, the sensor 119 in the reference example includes four elements, four magnetic regions, and four opposing magnetic regions. The multiple magnetic regions function as an MFC. The first element 11 overlaps with the region between the first magnetic region 51 and the first opposing magnetic region 51A. The second element 12 overlaps with the region between the second magnetic region 52 and the second opposing magnetic region 52A. The third element 13 overlaps with the region between the third magnetic region 53 and the third opposing magnetic region 53A. The fourth element 14 overlaps with the region between the fourth magnetic region 54 and the fourth opposing magnetic region 54A. The four elements are bridge-connected.

[0052] In sensor 119, the electrical resistance of each of the four elements changes according to the target magnetic field Hs. Sensor 119 can obtain a high output signal. However, in sensor 119, the first element 11 and the second element 12 are located diagonally opposite each other in the bridge circuit. The third element 13 and the fourth element 14 are also located diagonally opposite each other in the bridge circuit. In sensor 119, the distance between the first element 11 and the second element 12 along the first direction D1 (e.g., the X-axis direction) is long. It is difficult to obtain high spatial resolution in sensor 119.

[0053] In contrast, in the sensor 110 according to this embodiment, the MFC is omitted in the third element 13 and the fourth element 14. This makes it possible to shorten the distance along the first direction D1 between the first element 11 and the second element 12. Sensor 110 can obtain a higher spatial resolution than sensor 119.

[0054] In sensor 110, the electrical resistance of the third element 13 and the electrical resistance of the fourth element 14 do not change substantially with respect to the target magnetic field Hs. Therefore, the output signal of sensor 110 is lower than the output signal of sensor 119. However, the spatial resolution of detection in sensor 110 is higher than that of detection in sensor 119. For example, the target magnetic field Hs can be detected with high positional accuracy. According to this embodiment, a sensor capable of improving characteristics can be provided.

[0055] Figure 6 is a graph illustrating the characteristics of the sensor. The horizontal axis of Figure 6 represents the distance dZ between the detection target material generating the detection magnetic field Hs and the element part 10E. The vertical axis represents the parameter FWHM (Full Width at Half Maximum). FWHM is the full width at half the peak value of the sensitivity distribution function in the X-axis direction calculated by the finite element method. A small FWHM corresponds to high spatial resolution. 6 The characteristics of sensor 110 and sensor 119 are illustrated as examples.

[0056] As shown in Figure 6, sensor 110 yields a smaller FWHM than sensor 119. This difference in characteristics is particularly noticeable when the distance dZ is short during observation at high spatial resolution. According to this embodiment, detection with high spatial resolution is possible.

[0057] For example, as illustrated in Figure 1, in the sensor 110, the direction from the first element 11 to the second element 12 is along the second direction D2. This makes it easier to obtain higher spatial resolution.

[0058] As shown in Figure 3(a), in the sensor 110 according to this embodiment, the third element 13 includes a third magnetic layer 13a and a third opposing magnetic layer 13b. The third element 13 may include a third non-magnetic layer 13n provided between the third magnetic layer 13a and the third opposing magnetic layer 13b.

[0059] As shown in Figure 3(b), the fourth element 14 includes a fourth magnetic layer 14a and a fourth opposing magnetic layer 14b. The fourth element 14 may also include a fourth non-magnetic layer 14n provided between the fourth magnetic layer 14a and the fourth opposing magnetic layer 14b.

[0060] The third element 13 and the fourth element 14 are, for example, GMR elements. The third element 13 contains, for example, the same material as the first element 11. The fourth element 14 contains, for example, the same material as the second element 12. These elements can be obtained by a simple process. The configuration of the sensor 111, apart from the above, may be the same as the configuration of the sensor 110.

[0061] The direction from the first magnetic layer 11a to the first opposing magnetic layer 11b is along the third direction D3. As already explained, the third direction D3 intersects the plane containing the first direction D1 and the second direction D2. The direction from the second magnetic layer 12a to the second opposing magnetic layer 12b is along the third direction D3. The direction from the third magnetic layer 13a to the third opposing magnetic layer 13b is along the third direction D3. The direction from the fourth magnetic layer 14a to the fourth opposing magnetic layer 14b is along the third direction D3.

[0062] Figures 7(a) and 7(b) are schematic plan views illustrating a part of the sensor according to the first embodiment. As shown in Figure 7(a), for example, the length L11 of the first element 11 along the second direction D2 is longer than the length W11 of the first element 11 along the first direction D1. This shape makes the magnetization of the first magnetic layer 11a and the magnetization of the first opposing magnetic layer 11b more stable. As shown in Figure 7(b), the length L12 of the second element 12 along the second direction D2 is longer than the length W12 of the second element 12 along the first direction D1. This shape makes the magnetization of the second magnetic layer 12a and the magnetization of the second opposing magnetic layer 12b more stable.

[0063] One of the first magnetic layer 11a and the first opposing magnetic layer 11b is a magnetization free layer. The other of the first magnetic layer 11a and the first opposing magnetic layer 11b is a magnetization reference layer. One of the second magnetic layer 12a and the second opposing magnetic layer 12b is a magnetization free layer. The other of the second magnetic layer 12a and the second opposing magnetic layer 12b is a magnetization reference layer.

[0064] The first magnetic layer 11a, the first opposing magnetic layer 11b, the second magnetic layer 12a, and the second opposing magnetic layer 12b each include, for example, at least one selected from the group consisting of Fe, Co, and Ni.

[0065] Figure 8 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 8, in the sensor 110, the first magnetic region 51 includes a first outer portion 51o and a first inner portion 51i. The first opposing magnetic region 51A includes a first opposing inner portion 51Ai and a first opposing outer portion 51Ao. The first inner portion 51i is located between the first outer portion 51o and the first opposing outer portion 51Ao. The first opposing inner portion 51Ai is located between the first inner portion 51i and the first opposing outer portion 51Ao.

[0066] In this example, the length Li1 of the first inner portion 51i along the second direction D2 is shorter than the length Lo1 of the first outer portion 51o along the second direction D2. The length LAi1 of the first opposing inner portion 51Ai along the second direction D2 is shorter than the length LAo1 of the first opposing outer portion 51Ao along the second direction D2.

[0067] The second magnetic region 52 includes a second outer portion 52o and a second inner portion 52i. The second opposing magnetic region 52A includes a second opposing inner portion 52Ai and a second opposing outer portion 52Ao. The second inner portion 52i is located between the second outer portion 52o and the second opposing outer portion 52Ao. The second opposing inner portion 52Ai is located between the second inner portion 52i and the second opposing outer portion 52Ao.

[0068] The length Li2 of the second inner portion 52i along the second direction D2 is shorter than the length Lo2 of the second outer portion 52o along the second direction D2. The length LAi2 of the second opposing inner portion 52Ai along the second direction D2 is shorter than the length LAo2 of the second opposing outer portion 52Ao along the second direction D2.

[0069] Because the lengths of the inner parts (lengths Li1, LAi1, Li2, and LAi2) are shorter than the lengths of the outer parts, the detection magnetic field Hs is more effectively concentrated and applied to the first element 11 and the second element 12. Higher sensitivity can be obtained.

[0070] For example, the first outer portion 51o may be the outer end of the first magnetic region 51. The first inner portion 51i may be the inner end of the first magnetic region 51. The first opposing outer portion 51Ao may be the outer end of the first opposing magnetic region 51A. The first opposing inner portion 51Ai may be the inner end of the first opposing magnetic region 51A.

[0071] For example, the second outer portion 52o may be the outer end of the second magnetic region 52. The second inner portion 52i may be the inner end of the second magnetic region 52. The second opposing outer portion 52Ao may be the outer end of the second opposing magnetic region 52A. The second opposing inner portion 52Ai may be the inner end of the second opposing magnetic region 52A.

[0072] In this embodiment, the lengths of the inner portion (lengths Li1, LAi1, Li2, and LAi2) may be substantially the same as the lengths of the outer portion (lengths Lo1, LAo1, Lo2, and LAo2). This facilitates manufacturing and enables low-cost production.

[0073] As shown in Figure 8, in the sensor 110, at least one of the positions of the first magnetic region 51 in the first direction D1 and the position of the first opposing magnetic region 51A in the first direction D1 lies between the position of the third element 13 in the first direction D1 and the position of the fourth element 14 in the first direction D1.

[0074] As shown in Figure 8, at least one of the positions of the second magnetic region 52 in the first direction D1 and the second opposing magnetic region 52A in the first direction D1 lies between the position of the third element 13 in the first direction D1 and the position of the fourth element 14 in the first direction D1.

[0075] The following describes some examples of sensor configurations. In the following diagrams, some elements, such as the conductive member 20, are omitted as appropriate.

[0076] Figure 9 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 9, in the sensor 110p according to this embodiment, the edges of the multiple magnetic regions (such as the first magnetic region 51) are curved. In this example, the curves are convex.

[0077] Figure 10 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 10, in the sensor 110q according to this embodiment, the edges of the multiple magnetic regions (such as the first magnetic region 51) are curved. In this example, the curve is concave.

[0078] In sensors 110p and 110q, the curved edges of the magnetic region suppress the generation of magnetic domains, for example, at the edges. This reduces noise and makes it easier to achieve high yields during processing.

[0079] Figure 11 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 11, in the sensor 110r according to the embodiment, in each of the multiple magnetic regions, the length of the second direction D2 is qualitative It remains constant. Even with such a sensor 110r, it is possible to improve its characteristics.

[0080] Figures 12(a) and 12(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. As shown in Figure 12(a), in the sensor 110a according to the embodiment, the position of one end of the first element 11 in the first direction D1 coincides with the position of the end of the first magnetic region 51 in the first direction D1. The position of the other end of the first element 11 in the first direction D1 coincides with the position of the end of the first opposing magnetic region 51A in the first direction D1.

[0081] As shown in Figure 12(b), in the sensor 110a according to the embodiment, the position of one end of the second element 12 in the first direction D1 coincides with the position of the end of the second magnetic region 52 in the first direction D1. The position of the other end of the second element 12 in the first direction D1 coincides with the position of the end of the second opposing magnetic region 52A in the first direction D1.

[0082] Figures 13(a) and 13(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. As shown in Figure 13(a), in the sensor 110b according to the embodiment, the first element 11 overlaps with at least one of the first magnetic region 51 and the first opposing magnetic region 51A in the first direction D1. The third element 13 may overlap with at least one of the first magnetic region 51 and the first opposing magnetic region 51A in the first direction D1.

[0083] As shown in Figure 13(b), the second element 12 overlaps with at least one of the second magnetic region 52 and the second opposing magnetic region 52A in the first direction D1. The fourth element 14 may overlap with at least one of the second magnetic region 52 and the second opposing magnetic region 52A in the first direction D1. The configuration of sensor 110b, excluding the above, may be the same as the configuration of sensor 110, etc.

[0084] Figures 14(a) and 14(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. As shown in Figure 14(a), in the sensor 110c according to the embodiment, a part of the first element 11 overlaps with at least one of the first magnetic region 51 and the first opposing magnetic region 51A in the third direction D3. As already explained, the third direction D3 intersects the plane containing the first direction D1 and the second direction D2.

[0085] As shown in Figure 14(b), a portion of the second element 12 overlaps with at least one of the second magnetic region 52 and the second opposing magnetic region 52A in the third direction D3. The configuration of the sensor 110c, excluding the above, may be the same as that of the sensor 110.

[0086] Figures 15(a) and 15(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. As shown in Figures 15(a) and 15(b), in the sensor 110d according to this embodiment, the thickness of the magnetic region in the Z-axis direction changes. The configuration of the sensor 110d, aside from this, may be the same as that of the sensor 110.

[0087] As shown in Figure 15(a), in the sensor 110d, in the first magnetic region 51, the length ti1 of the first inner portion 51i along the third direction D3 is shorter than the length to1 of the first outer portion 51o along the third direction D3. The length tAi1 of the first opposing inner portion 51Ai along the third direction D3 is shorter than the length tAo1 of the first opposing outer portion 51Ao along the third direction D3.

[0088] As shown in Figure 15(b), the length ti2 of the second inner portion 52i along the third direction D3 is shorter than the length to2 of the second outer portion 52o along the third direction D3. The length tAi2 of the second opposing inner portion 52Ai along the third direction D3 is shorter than the length tAo2 of the second opposing outer portion 52Ao along the third direction D3.

[0089] Because the thickness of the inner part (length along the third direction D3) is shorter than the thickness of the outer part, the target magnetic field Hs is more effectively concentrated and applied to the first element 11 and the second element 12. Higher sensitivity can be obtained.

[0090] Figures 16(a) and 16(b) schematically illustrate the sensor according to the first embodiment. Cut off This is a view drawing. As shown in Figures 16(a) and 16(b), in the sensor 110e according to this embodiment, the configuration of the third element 13 and the fourth element 14 differs from the configuration of the third element 13 and the fourth element 14 in sensor 110. The configuration of sensor 110e other than this can be the same as that of sensor 110 and the like.

[0091] In the sensor 110e, the third element 13 and the fourth element 14 may each be a resistive member. The third element 13 and the fourth element 14 may each be a resistive member including a magnetic layer.

[0092] If the third element 13 and the fourth element 14 are both resistive members, these elements may be provided in the control unit 70 or the like. For example, the third element 13 and the fourth element 14 may be included in the element current circuit 71. Alternatively, the third element 13 and the fourth element 14 may be provided separately from the element section 10E and the control unit 70. In this case as well, a high signal-to-noise ratio can be obtained.

[0093] Figure 17 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 17, in the sensor 110f according to this embodiment, the positions of the third element 13 and the fourth element 14 are different from the positions of the third element 13 and the fourth element 14 in sensor 110. The configuration of sensor 110f, apart from this, may be the same as the configuration of sensor 110 and the like.

[0094] In the sensor 110f, the position of the first magnetic region 51 in the second direction D2, and the position of the second magnetic region 52 in the second direction D2, are located between the position of the third element 13 in the second direction D2 and the position of the fourth element 14 in the second direction D2.

[0095] Figure 18 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 18, in the sensor 110g according to this embodiment, the positions of the third element 13 and the fourth element 14 are different from those of the third element 13 and the fourth element 14 in sensor 110. The configuration of sensor 110g, aside from this, may be the same as that of sensor 110 and the like.

[0096] In sensor 110g, the direction from the first element 11 to the second element 12 is along the second direction D2. The direction from the third element 13 to the first element 11 is along the second direction D2. The direction from the second element 12 to the fourth element 14 is along the second direction D2.

[0097] Figure 19 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 19, in the sensor 110h according to this embodiment, the positions of the third element 13 and the fourth element 14 are different from the positions of the third element 13 and the fourth element 14 in sensor 110. The configuration of sensor 110h other than this can be the same as the configuration of sensor 110 and the like.

[0098] In sensor 110h, at least one of the positions of the third element 13 in the second direction D2 and the fourth element 14 in the second direction D2 lies between the position of the first magnetic region 51 in the second direction D2 and the position of the second magnetic region 52 in the second direction D2.

[0099] In the various sensors described above, at least one of the positions of at least a portion of the first element 11 in the first direction D1, and at least one of the positions of at least a portion of the second element 12 in the first direction D1, lies between the position of the third element 13 in the first direction D1 and the position of the fourth element 14 in the first direction D1.

[0100] In the various sensors described above, the third element 13 and the fourth element 14 do not overlap with the first magnetic region 51, the first opposing magnetic region 51A, the second magnetic region 52, and the second opposing magnetic region 52A in the third direction D3.

[0101] Figure 20 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 20, in the sensor 110i according to this embodiment, the positions of the third element 13 and the fourth element 14 are different from the positions of the third element 13 and the fourth element 14 in sensor 110. The configuration of sensor 110i, aside from this, may be the same as the configuration of sensor 110 and the like.

[0102] In the sensor 110i, the third element 13 overlaps with the second opposing magnetic region 52A in the third direction D3. The fourth element 14 overlaps with the first magnetic region 51 in the third direction D3. For example, a small element portion 10E can be easily obtained.

[0103] In this embodiment, at least one of the third element 13 and the fourth element 14 may overlap with at least one of the first magnetic region 51, the first opposing magnetic region 51A, the second magnetic region 52, and the second opposing magnetic region 52A in the third direction D3.

[0104] High spatial resolution can be obtained with the above-mentioned sensors. Sensors with improved characteristics can be provided.

[0105] Figure 21 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 21, in the sensor 110j according to this embodiment, the position of the second element 12 in the first direction D1 is different from the position of the first element 11 in the first direction D1. The second element 12 may be shifted from the first element 11. The configuration of the sensor 110j, aside from this, may be the same as that of the sensor 110 and the like.

[0106] In the sensor 110j, the distance (shift amount) along the first direction D1 between the position of the first element 11 in the first direction D1 and the position of the second element 12 in the first direction D1 may be 0.3 times or less the length of the first magnetic region 51 in the first direction D1.

[0107] Figure 22 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 22, in the sensor 110k according to the embodiment, the position of the second element 12 in the first direction D1 is different from the position of the first element 11 in the first direction D1. In the sensor 110k, the position of the first outer portion 51o in the first direction D1 may be substantially the same as the position of the second outer portion 52o in the first direction D1. The position of the first opposing outer portion 51Ao in the first direction D1 may be substantially the same as the position of the second opposing outer portion 52Ao in the first direction D1. The configuration of the sensor 110k, apart from these, may be the same as the configuration of the sensor 110j.

[0108] Figure 23 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 23, in the sensor 111 according to this embodiment, the configuration of the conductive member 20 and the terminals differs from their configurations in the sensor 110. The rest of the configuration of the sensor 111 may be the same as that of the sensor 110.

[0109] In the sensor 111, the conductive member 20 includes a first conductive region 21 and a second conductive region 22. The first conductive region 21 includes a first conductive portion 21e corresponding to the first portion 11e and a first other conductive portion 21f corresponding to the first other portion 11f. The second conductive region 22 includes a second conductive portion 22e corresponding to the second portion 12e and a second other conductive portion 22f corresponding to the second other portion 12f. The first other conductive portion 21f is separated from the second conductive portion 22e. The first conductive portion 21e is connected to the second conductive portion 22e. The first terminal 25A is electrically connected to the first other conductive portion 21f. The second terminal 25B is electrically connected to the second other conductive portion 22f.

[0110] As shown in Figure 23, a control unit 70 including an AC circuit 73 may be provided. The AC circuit 73 is capable of supplying a conductive member current Iac, which includes an AC component, between the first terminal 25A and the second terminal 25B.

[0111] The AC circuit 73 can supply a conductive member current Iac containing an AC component to the conductive member 20 via these terminals. When the conductive member current Iac has a direction from the first non-conductive portion 21f to the first conductive portion 21e, the conductive member current Iac has a direction from the second conductive portion 22e to the second non-conductive portion 22f.

[0112] An AC magnetic field Hac based on the conductive member current Iac is applied to the first element 11 and the second element 12. The phase of the AC magnetic field Hac is inverted in these elements. By applying the inverted AC magnetic field Hac to these elements, the 2f frequency component is effectively removed in the bridge output. A high signal-to-noise ratio is obtained. Sensor 111 can provide a sensor with improved characteristics.

[0113] In sensor 111, the configurations of sensors 110p to 110r and sensors 110a to 110k may be applied.

[0114] Figure 24 is a schematic plan view illustrating a sensor according to the first embodiment. Figures 25(a) and 25(b) are schematic cross-sectional views illustrating a sensor according to the first embodiment. Figure 25(a) is a cross-sectional view taken along the line E1-E2 in Figure 24. Figure 25(b) is a cross-sectional view taken along the line F1-F2 in Figure 24. As shown in Figures 24, 25(a), and 25(b), the sensor 112 according to this embodiment further includes a conductive layer 20L. The configuration of the sensor 112, excluding this layer, may be the same as that of the sensor 110.

[0115] The conductive layer 20L extends along the first element 11 and the second element 12. A conductive layer current Ic may be supplied to the conductive layer 20L. The conductive layer current Ic includes, for example, a DC component. The conductive layer current Ic can, for example, correct for the effects of the Earth's magnetic field. This allows for detection of the target magnetic field Hs with higher accuracy.

[0116] As shown in Figure 24, the control unit 70 can supply a conductive layer current Ic, which includes a DC component, to the conductive layer 20L. The control unit 70 may include a current circuit 74. The current circuit 74 can supply a conductive layer current Ic to the conductive layer 20L.

[0117] As shown in Figure 25(a), the conductive layer 20L may overlap with the first element 11 in the third direction D3. As shown in Figure 25(b), the conductive layer 20L may overlap with the second element 12 in the third direction D3. The stacking order is arbitrary.

[0118] Figure 26 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 26, the sensor 113 according to this embodiment further includes a conductive layer 20L. The configuration of the sensor 113, excluding this layer, may be the same as that of the sensor 111. For example, it can compensate for the effects of the Earth's magnetic field. It can detect the target magnetic field Hs with higher accuracy. The control unit 70 may include a current circuit 74.

[0119] (Second Embodiment) The second embodiment relates to an inspection device. As will be described later, the inspection device may also include a diagnostic device.

[0120] Figure 27 shows a model of an inspection apparatus according to the second embodiment. Equation diagram That is the case. As shown in Figure 27, the inspection apparatus 710A according to the second embodiment includes a sensor according to the first embodiment (e.g., sensor 110) and a processing unit 770. The processing unit 770 processes the signal obtained from sensor 110. The processing unit 770 may also perform a comparison between the signal obtained from sensor 110 and a reference value. Based on the processing results, the processing unit 770 can output an inspection result.

[0121] For example, the inspection device 710A inspects the object to be inspected 680. The object to be inspected 680 is, for example, an electronic device (including semiconductor circuits, etc.). The object to be inspected 680 includes, for example, a substrate 80 and wiring 80c. The sensor 110 detects the target magnetic field Hs based on the current flowing through the wiring 80c. The target magnetic field Hs can be detected with high spatial position accuracy. For example, abnormalities in the wiring 80c can be detected with high positional accuracy.

[0122] Figure 28 is a schematic perspective view showing an inspection apparatus according to the second embodiment. As shown in Figure 28, the inspection apparatus 710 according to the second embodiment includes a sensor 150a (magnetic sensor) and a processing unit 770. The sensor 150a may be the sensor according to the first embodiment or a variation thereof. The processing unit 770 processes the signal obtained from the sensor 150a. The processing unit 770 may also perform a comparison between the signal obtained from the sensor 150a and a reference value. Based on the processing results, the processing unit 770 can output an inspection result.

[0123] For example, the inspection device 710 inspects the object to be inspected 680. The object to be inspected 680 is, for example, an electronic device (including semiconductor circuits, etc.). The object to be inspected 680 may also be, for example, a battery 610.

[0124] For example, the sensor 150a according to the embodiment may be used together with the battery 610. For example, the battery system 600 includes the battery 610 and the sensor 150a. The sensor 150a can detect the magnetic field generated by the current flowing through the battery 610.

[0125] Figure 29 is a schematic plan view showing an inspection apparatus according to the second embodiment. As shown in Figure 29, the sensor 150a includes, for example, a plurality of sensors according to the embodiment. In this example, the sensor 150a includes a plurality of sensors (such as element parts 10E, such as sensor 110). The plurality of sensors are arranged, for example, along two directions. The plurality of sensors 110 are, for example, provided on a substrate.

[0126] Sensor 150a can detect the magnetic field generated by the current flowing through the object to be inspected 680 (for example, a battery 610). For example, when a battery 610 approaches an abnormal state, an abnormal current may flow through it. By detecting this abnormal current with sensor 150a, changes in the state of the battery 610 can be detected. For example, with sensor 150a placed close to the battery 610, the entire battery 610 can be inspected in a short time using sensor group driving means in two directions. Sensor 150a may also be used for inspecting the battery 610 during its manufacturing process.

[0127] The sensor according to this embodiment can be applied, for example, to an inspection device 710 such as a diagnostic device. Figure 30 is a schematic diagram showing a sensor and inspection apparatus according to an embodiment. As shown in Figure 30, the diagnostic device 500, which is an example of the inspection device 710, includes a sensor 150. The sensor 150 includes the sensors described with respect to the first embodiment and variations thereof.

[0128] In the diagnostic device 500, the sensor 150 is, for example, a magnetoencephalograph (MEG). The MEG detects magnetic fields emitted by cranial nerves. When the sensor 150 is used in a MEG, the size of the elements included in the sensor 150 is, for example, 1 mm or more and less than 10 mm. This size includes, for example, the MFC (Magnoluminescent Focus Cell).

[0129] As shown in Figure 30, the sensor 150 (magnetoencephalograph) is attached, for example, to the head of a human body. The sensor 150 (magnetoencephalograph) includes a sensor unit 301. The sensor 150 (magnetoencephalograph) may include multiple sensor units 301. The number of multiple sensor units 301 is, for example, about 100 (for example, 50 to 150). The multiple sensor units 301 are provided on a flexible base 302.

[0130] The sensor 150 may include, for example, a circuit for differential detection. The sensor 150 may also include other sensors (for example, a potential terminal or an acceleration sensor).

[0131] The size of sensor 150 is smaller than that of conventional SQUID sensors. Therefore, it is easy to install multiple sensor units 301. It is easy to install multiple sensor units 301 and other circuits. It is easy for multiple sensor units 301 and other sensors to coexist.

[0132] The base body 302 may include an elastic material such as silicone resin. Multiple sensor units 301 can be connected to the base body 302, for example. The base body 302 can be attached to the head, for example.

[0133] The input / output code 303 of the sensor unit 301 is connected to the sensor drive unit 506 and the signal input / output unit 504 of the diagnostic device 500. Based on the power from the sensor drive unit 506 and the control signal from the signal input / output unit 504, the sensor unit 301 performs magnetic field measurement. The result is input to the signal input / output unit 504. The signal obtained by the signal input / output unit 504 is supplied to the signal processing unit 508. In the signal processing unit 508, processing such as noise removal, filtering, amplification, and signal calculations is performed. The signal processed by the signal processing unit 508 is supplied to the signal analysis unit 510. The signal analysis unit 510 extracts specific signals for magnetoencephalography, for example. In the signal analysis unit 510, signal analysis is performed, for example, to match the signal phase.

[0134] The output of the signal analysis unit 510 (data after signal analysis is complete) is supplied to the data processing unit 512. The data processing unit 512 performs data analysis. In this data analysis, image data such as MRI (Magnetic Resonance Imaging) can be incorporated. In this data analysis, scalp potential information such as EEG (Electroencephalogram) can be incorporated. Through data analysis, for example, nerve firing point analysis or inverse problem analysis can be performed.

[0135] The results of the data analysis are supplied, for example, to the imaging diagnostic unit 516. Imaging is performed in the imaging diagnostic unit 516. The imaging assists in the diagnosis.

[0136] The above series of operations are controlled, for example, by a control mechanism 502. Necessary data, such as primary signal data or metadata during data processing, is stored in a data server. The data server and the control mechanism may be integrated.

[0137] The diagnostic device 500 according to the embodiment includes a sensor 150 and a processing unit that processes signals obtained from the sensor 150. This processing unit includes, for example, at least one of a signal processing unit 508 and a data processing unit 512. The processing unit includes, for example, a computer.

[0138] In the sensor 150 shown in Figure 30, the sensor unit 301 is installed on the head of a human body. The sensor unit 301 may also be installed on the chest of a human body. This enables magnetocardiography. For example, the sensor unit 301 may also be installed on the abdomen of a pregnant woman. This allows for fetal heart rate testing.

[0139] It is preferable that the sensor equipment, including the subjects, be installed in a shielded room. This helps to suppress the effects of, for example, geomagnetic fields or magnetic noise.

[0140] For example, a mechanism may be provided to locally shield the measurement area of ​​the human body or the sensor unit 301. For example, a shielding mechanism may be provided on the sensor unit 301. For example, effective shielding may be performed during signal analysis or data processing.

[0141] In the embodiment, the base 302 may be flexible or not substantially flexible. In this example, the base 302 is a continuous membrane processed into a cap shape. The base 302 may also be net-like. This provides, for example, good wearability. For example, the adhesion of the base 302 to the human body is improved. The base 302 may be helmet-like and rigid.

[0142] Figure 31 is a schematic diagram showing an inspection apparatus according to an embodiment. In the example shown in Figure 31, the sensor unit 301 is provided on a flat, rigid base 305.

[0143] In the example shown in Figure 31, the input and output of the signal obtained from the sensor unit 301 are the same as the input and output described with respect to Figure 30. In the example shown in Figure 31, the processing of the signal obtained from the sensor unit 301 is the same as the processing described with respect to Figure 30.

[0144] One example of a device used to measure weak magnetic fields, such as those generated by living organisms, is the use of a SQUID (Superconducting Quantum Interference Device) sensor. However, because this example uses superconductivity, the device is large and consumes a lot of power, placing a significant burden on the person being measured (the patient).

[0145] According to the embodiment, the device can be made smaller. Power consumption can be reduced. The burden on the person being measured (patient) can be reduced. According to the embodiment, the signal-to-noise ratio of magnetic field detection can be improved. Sensitivity can be improved.

[0146] The embodiment may include the following configuration (e.g., proposed technical details). (Composition 1) The first magnetic region and, A first opposing magnetic region, wherein the first opposing magnetic region is separated from the first magnetic region in a first direction from the first magnetic region to the first opposing magnetic region, A first element comprising a first magnetic layer, wherein the position of at least a portion of the first element in the first direction lies between the position of the first magnetic region in the first direction and the position of the first opposing magnetic region in the first direction, and the first element comprises a first portion and a first other portion, and a second direction from the first portion to the first other portion intersects the first direction with the first element. The second magnetic region is such that the direction from the first magnetic region to the second magnetic region is along the second direction. A second opposing magnetic region, wherein the earlier second opposing magnetic region is separated from the earlier second magnetic region in the earlier first direction, and the direction from the earlier first opposing magnetic region to the earlier second opposing magnetic region is along the earlier second direction, A second element comprising a second magnetic layer, wherein the position of at least a portion of the second element in the first direction is between the position of the second magnetic region in the first direction and the position of the second opposing magnetic region in the first direction, and the second element comprises a second portion and a second other portion, and the direction from the second portion to the second other portion is along the second direction, A third element comprising a third part and a third other part, wherein the third part is electrically connected to the first part, and the third other part is electrically connected to the second part, A fourth element comprising a fourth part and a fourth other part, wherein the fourth part is electrically connected to the first other part, and the fourth other part is electrically connected to the second other part, A conductive member comprising a first conductive region and a second conductive region, wherein the first conductive region comprises a first conductive portion corresponding to the first part and a first other conductive portion corresponding to the first other part, and the second conductive region comprises a second conductive portion corresponding to the second part and a second other conductive portion corresponding to the second other part, and the first other conductive portion is continuous with the second conductive portion and the conductive member, A first terminal electrically connected to the first non-conductive portion and the second conductive portion, A second terminal electrically connected to the first conductive portion and the second non-conductive portion, A sensor equipped with this feature.

[0147] (Configuration 2) The first magnetic region and, A first opposing magnetic region, wherein the first opposing magnetic region is separated from the first magnetic region in a first direction from the first magnetic region to the first opposing magnetic region, A first element comprising a first magnetic layer, wherein the position of at least a portion of the first element in the first direction lies between the position of the first magnetic region in the first direction and the position of the first opposing magnetic region in the first direction, and the first element comprises a first portion and a first other portion, and a second direction from the first portion to the first other portion intersects the first direction with the first element. The second magnetic region is such that the direction from the first magnetic region to the second magnetic region is along the second direction. A second opposing magnetic region, wherein the earlier second opposing magnetic region is separated from the earlier second magnetic region in the earlier first direction, and the direction from the earlier first opposing magnetic region to the earlier second opposing magnetic region is along the earlier second direction, A second element comprising a second magnetic layer, wherein the position of at least a portion of the second element in the first direction is between the position of the second magnetic region in the first direction and the position of the second opposing magnetic region in the first direction, and the second element comprises a second portion and a second other portion, and the direction from the second portion to the second other portion is along the second direction, A third element comprising a third part and a third other part, wherein the third part is electrically connected to the first part, and the third other part is electrically connected to the second part, A fourth element comprising a fourth part and a fourth other part, wherein the fourth part is electrically connected to the first other part, and the fourth other part is electrically connected to the second other part, A conductive member comprising a first conductive region and a second conductive region, wherein the first conductive region comprises a first conductive portion corresponding to the first part and a first other conductive portion corresponding to the first other part, and the second conductive region comprises a second conductive portion corresponding to the second part and a second other conductive portion corresponding to the second other part, wherein the first other conductive portion is separated from the second conductive portion and the first conductive portion is connected to the second conductive portion, A first terminal electrically connected to the first non-conductive portion, A second terminal electrically connected to the second non-conductive portion, A sensor equipped with this feature.

[0148] (Composition 3) It further includes a control unit that includes an AC circuit, The sensor according to configuration 1 or 2, wherein the AC circuit is capable of supplying a conductive member current containing an AC component between the first terminal and the second terminal.

[0149] (Composition 4) The first magnetic region and, A first opposing magnetic region, wherein the first opposing magnetic region is separated from the first magnetic region in a first direction from the first magnetic region to the first opposing magnetic region, A first element comprising a first magnetic layer, wherein the position of at least a portion of the first element in the first direction lies between the position of the first magnetic region in the first direction and the position of the first opposing magnetic region in the first direction, and the first element comprises a first portion and a first other portion, and a second direction from the first portion to the first other portion intersects the first direction with the first element. The second magnetic region is such that the direction from the first magnetic region to the second magnetic region is along the second direction. A second opposing magnetic region, wherein the earlier second opposing magnetic region is separated from the earlier second magnetic region in the earlier first direction, and the direction from the earlier first opposing magnetic region to the earlier second opposing magnetic region is along the earlier second direction, A second element comprising a second magnetic layer, wherein the position of at least a portion of the second element in the first direction is between the position of the second magnetic region in the first direction and the position of the second opposing magnetic region in the first direction, and the second element comprises a second portion and a second other portion, and the direction from the second portion to the second other portion is along the second direction, A third element comprising a third part and a third other part, wherein the third part is electrically connected to the first part, and the third other part is electrically connected to the second part, A fourth element comprising a fourth part and a fourth other part, wherein the fourth part is electrically connected to the first other part, and the fourth other part is electrically connected to the second other part, A conductive member comprising a first conductive region and a second conductive region, wherein the first conductive region comprises a first conductive portion corresponding to the first part and a first other conductive portion corresponding to the first other part, and the second conductive region comprises a second conductive portion corresponding to the second part and a second other conductive portion corresponding to the second other part, and when a conductive member current containing an AC component is supplied to the conductive member, the conductive member current has a direction from the first other conductive portion to the first conductive portion, and the conductive member comprises a conductive member comprising a conductive member comprising a first conductive region and a second other conductive region, wherein when the conductive member current has a direction from the first other conductive portion to the first conductive portion, the conductive member current has a direction from the second conductive portion to the second other conductive portion, A sensor equipped with this feature.

[0150] (Composition 5) It further includes a control unit that includes an AC circuit, The sensor according to configuration 1 or 2, wherein the AC circuit is capable of supplying conductive member current to the conductive member.

[0151] (Composition 6) The control unit further comprises an element current circuit and a detection circuit. The element current circuit is capable of supplying element current between the first connection point of the first and third parts and the second connection point of the second and fourth parts. The sensor according to configuration 3 or 5, wherein the detection circuit is capable of detecting a detection signal generated between the third connection point of the third other part and the second part and the fourth connection point of the first other part and the fourth part.

[0152] (Composition 7) The sensor according to configuration 6, wherein the detection circuit is capable of outputting an output signal obtained by processing the detection signal based on the frequency of the conductive member current.

[0153] (Composition 8) The device further comprises a conductive layer extending along the first element and the second element, The sensor according to configuration 3 or 5, wherein the control unit is capable of supplying a conductive layer current containing a DC component to the conductive layer.

[0154] (Composition 9) The sensor according to any one of configurations 3 to 5, wherein the magnetic field based on the conductive member current includes a component in the first direction.

[0155] (Composition 10) At least one of the positions of the first magnetic region in the first direction and the positions of the first opposing magnetic region in the first direction is located between the position of the third element in the first direction and the position of the fourth element in the first direction. The sensor according to any one of configurations 1 to 9, wherein at least one of the positions of the second magnetic region in the first direction and the positions of the second opposing magnetic region in the first direction is located between the position of the third element in the first direction and the position of the fourth element in the first direction.

[0156] (Composition 11) The sensor according to any one of configurations 1 to 9, wherein at least one of the positions of the first element in the first direction and at least one of the positions of the second element in the first direction is located between the position of the third element in the first direction and the position of the fourth element in the first direction.

[0157] (Composition 12) The sensor according to any one of configurations 1 to 9, wherein the position of the first magnetic region in the second direction and the position of the second magnetic region in the second direction are between the position of the third element in the second direction and the position of the fourth element in the second direction.

[0158] (Composition 13) The sensor according to any one of configurations 1 to 9, wherein at least one of the positions of the third element in the second direction and the position of the fourth element in the second direction lies between the position of the first magnetic region in the second direction and the position of the second magnetic region in the second direction.

[0159] (Composition 14) The sensor according to any one of configurations 1 to 9, wherein the third element and the fourth element do not overlap with the first magnetic region, the first opposing magnetic region, the second magnetic region, and the second opposing magnetic region in a third direction intersecting a plane including the first and second directions.

[0160] (Composition 15) The sensor according to any one of configurations 1 to 14, wherein the first electrical resistance of the first element and the second electrical resistance of the second element are changeable according to the magnetic field to be detected.

[0161] (Composition 16) The sensor according to configuration 15, wherein the change in the third electrical resistance of the third element with respect to the magnetic field, and the change in the fourth electrical resistance of the fourth element with respect to the magnetic field are smaller than the change in the first electrical resistance with respect to the magnetic field, and smaller than the change in the second electrical resistance with respect to the magnetic field.

[0162] (Composition 17) The first element further includes a first opposing magnetic layer, The second element further includes a second opposing magnetic layer, The sensor according to any one of configurations 1 to 8, wherein at least one of the directions from the first magnetic layer to the first opposing magnetic layer and the direction from the second magnetic layer to the second opposing magnetic layer is along a third direction that intersects a plane including the first and second directions.

[0163] (Composition 18) The length of the first element along the second direction is longer than the length of the first element along the first direction. The sensor according to any one of configurations 1 to 17, wherein the length of the second element along the second direction is longer than the length of the second element along the first direction.

[0164] (Composition 19) The third element includes a third magnetic layer and a third opposing magnetic layer, The sensor according to any one of configurations 1 to 18, wherein the fourth element includes a fourth magnetic layer and a fourth opposing magnetic layer.

[0165] (Composition 20) A sensor described in one of configurations 1 to 19, A processing unit that processes signals obtained from the aforementioned sensor, An inspection device equipped with the following features.

[0166] According to the embodiment, a sensor and inspection device capable of improving characteristics can be provided.

[0167] Embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configuration of each element, such as magnetic layers, elements, conductive members, control units and processing units, included in a sensor or inspection device, is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known scope to implement the present invention in a similar manner and obtain similar effects.

[0168] Combinations of two or more elements from each example, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0169] All sensors and inspection devices that a person skilled in the art can design and implement based on the sensors and inspection devices described above as embodiments of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0170] Within the scope of the concept of this invention, a person skilled in the art would be able to conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of this invention.

[0171] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of symbols]

[0172] 10E...Element section, 11-14...First to fourth elements, 11a-14a...First to fourth magnetic layers, 11b-14b...First to fourth opposing magnetic layers, 11e-14e...First to fourth parts, 11f-14f...First to fourth other parts, 11n-14n...First to fourth non-magnetic layers, 20... Conductive member, 20L... Conductive layer, 21, 22... First and second conductive regions, 21e, 22e... First and second conductive parts, 21f, 22f... First and second other conductive parts, 25A, 25B... First and second terminals, 51-54... First to fourth magnetic regions, 51A to 54A...first to fourth opposing magnetic regions, 51Ai, 52Ai...first and second opposing inner parts, 51Ao, 52Ao...First and second opposing outer parts, 51S, 52S...Region, 51i, 52i...First and second inner parts, 51o, 52o...First and second outer parts, 70...Control unit, 71...Element current circuit, 72...Detection circuit, 73...AC circuit, 74...Current circuit, 78a~78d...Wiring, 80...Substrate, 80c...Wiring, 81...Insulating material, 110, 110a~110k, 110p~110r, 111~113, 119, 150, 150a...Sensor, 301...Sensor unit, 302...Base, 303...Input / output code, 305...Base, 500...Diagnostic device, 502...Control mechanism, 504...Signal input / output unit, 506...Sensor drive unit, 508…Signal processing unit, 510…Signal analysis unit, 512…Data processing unit, 516…Image diagnostic unit, 600…Battery system, 610…Battery, 680…Inspection target, 710, 710A…Inspection device, 770…Processing unit, CP1~CP4…1st~4th connection point, D1~D3…1st~3rd direction, H…Magnetic field, Hac…AC magnetic field, Hs…Detection target magnetic field, Iac…Conductive material current, Ic…Conductive layer current, Ie…Element current, L11, L12, LAi1, LAi2, LAo1, LAo2, Li1, Li2, Lo1, Lo2…Length, Sig1…Detection signal, Sig2…Output signal, W11, W12…Length, dY…Distance, tAi1, tAi2, tAo1, tAo2, ti1, ti2, to1, to2…Length

Claims

1. The first magnetic region and, A first opposing magnetic region, wherein the first opposing magnetic region is separated from the first magnetic region in a first direction from the first magnetic region to the first opposing magnetic region, A first element comprising a first magnetic layer, wherein the position of at least a portion of the first element in the first direction is between the position of the first magnetic region in the first direction and the position of the first opposing magnetic region in the first direction, and the first element comprises a first portion and a first other portion, and a second direction from the first portion to the first other portion intersects the first direction with the first element, The second magnetic region, wherein the direction from the first magnetic region to the second magnetic region is along the second direction, A second opposing magnetic region, wherein the second opposing magnetic region is separated from the second magnetic region in the first direction, and the direction from the first opposing magnetic region to the second opposing magnetic region is along the second direction, A second element comprising a second magnetic layer, wherein the position of at least a portion of the second element in the first direction is between the position of the second magnetic region in the first direction and the position of the second opposing magnetic region in the first direction, and the second element comprises a second portion and a second other portion, and the direction from the second portion to the second other portion is along the second direction, A third element comprising a third part and a third other part, wherein the third part is electrically connected to the first part, and the third other part is electrically connected to the second part, A fourth element comprising a fourth part and a fourth other part, wherein the fourth part is electrically connected to the first other part, and the fourth other part is electrically connected to the second other part, A conductive member comprising a first conductive region and a second conductive region, wherein the first conductive region comprises a first conductive portion corresponding to the first part and a first other conductive portion corresponding to the first other part, and the second conductive region comprises a second conductive portion corresponding to the second part and a second other conductive portion corresponding to the second other part, wherein the first other conductive portion is separated from the second conductive portion and the first conductive portion is connected to the second conductive portion, A first terminal electrically connected to the first non-conductive portion, A second terminal electrically connected to the second non-conductive portion, A sensor equipped with this feature.

2. It further includes a control unit that includes an AC circuit, The sensor according to claim 1, wherein the AC circuit is capable of supplying a conductive member current containing an AC component between the first terminal and the second terminal.

3. It further includes a control unit that includes an AC circuit, The sensor according to claim 1, wherein the AC circuit is capable of supplying conductive member current to the conductive member.

4. The control unit further comprises an element current circuit and a detection circuit. The element current circuit is capable of supplying element current between the first connection point of the first and third parts and the second connection point of the second and fourth parts. The sensor according to claim 2, wherein the detection circuit is capable of detecting a detection signal generated between the third connection point of the third other part and the second part and the fourth connection point of the first other part and the fourth part.

5. The sensor according to claim 4, wherein the detection circuit is capable of outputting an output signal obtained by processing the detection signal based on the frequency of the conductive member current.

6. The device further comprises a conductive layer extending along the first element and the second element, The sensor according to claim 2, wherein the control unit is capable of supplying a conductive layer current containing a DC component to the conductive layer.

7. The sensor according to claim 2, wherein the magnetic field based on the conductive member current includes a component in the first direction.

8. The sensor according to claim 1, A processing unit that processes signals obtained from the aforementioned sensor, An inspection device equipped with the following features.

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