Mask device

Abstract

To provide a mask device capable of enhancing the position accuracy of a mask layer.SOLUTION: A mask device includes: a mask; a first frame connected to the mask; a base material including a first surface, a second surface positioned on the side opposite to the first surface and a plurality of first openings penetrated from the first surface to the second surface; and a mask layer including a third surface facing the second surface and a fourth surface positioned on the side opposite to the third surface. The base material includes silicon or a silicon compound; the mask layer includes a plurality of second openings overlapping with the first openings in the plane view and penetrated from the third surface to the fourth surface; the base material includes an internal area positioned among the plurality of first openings in the plane view and an external area spreading along the outer edge of the base material and surrounding the plurality of first openings and the internal areas in the plane view; a first surface of the external area includes a part inclined to a second surface of the frame; and the first frame includes one third opening overlapping with the plurality of first openings of the base material in the plane view.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a mask device.

Background Art

[0002] As a method for forming a precise pattern, a vapor deposition method is known. In the vapor deposition method, a mask having a plurality of openings is combined with a substrate. Subsequently, a vapor deposition material is attached to the substrate through the openings of the mask. Thereby, a vapor deposition layer containing the vapor deposition material is formed on the substrate in a pattern corresponding to the pattern of the openings of the mask. The vapor deposition method is used, for example, as a method for forming pixels of an organic EL display device.

[0003] For example, Patent Document 1 discloses a vapor deposition mask including a substrate containing silicon and a mask layer having a plurality of openings. Since the substrate containing silicon and the mask layer are combined, the shape accuracy and position accuracy of the through holes of the mask layer are improved.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] When deformation such as bending occurs in the substrate, the positions of the plurality of openings in the mask layer are shifted from the ideal positions as a whole.

Means for Solving the Problems

[0006] A mask device according to one embodiment of the present disclosure may include a mask and a first frame connected to the mask. The mask may include a substrate having a first surface, a second surface located opposite to the first surface, and a plurality of first openings penetrating from the first surface to the second surface, and a mask layer having a third surface facing the second surface and a fourth surface located opposite to the third surface. The substrate may contain silicon or a silicon compound. The mask layer may include a plurality of second openings overlapping the first openings in a plan view and penetrating from the third surface to the fourth surface. The substrate may include an inner region located between the plurality of first openings in a plan view, and an outer region extending along the outer edge of the substrate and surrounding the plurality of first openings and the inner region in a plan view. The first frame may include a first frame surface and a second frame surface located opposite to the first frame surface and facing the first surface of the substrate. The first surface of the outer region may include a portion inclined with respect to the second frame surface. The first frame may include a third opening that overlaps with the plurality of first openings of the substrate in a plan view. [Effects of the Invention]

[0007] According to the embodiments of this disclosure, the positional accuracy of the mask layer can be improved. [Brief explanation of the drawing]

[0008] [Figure 1] This is a cross-sectional view showing an example of an organic device. [Figure 2] This figure shows an example of a vapor deposition apparatus equipped with a mask device. [Figure 3] This is a plan view showing an example of a mask device as seen from the side of the incident surface. [Figure 4] This is a plan view showing an example of a mask device as seen from the side of the emission surface. [Figure 5] Figure 3 is a cross-sectional view of the mask along the VV line. [Figure 6] This is a cross-sectional view showing an example of the outer region of the substrate and the first frame. [Figure 7] It is a cross-sectional view showing an example of the outer region of the substrate. [Figure 8] It is a plan view showing an example of the mask when viewed from the side of the incident surface. [Figure 9] It is a cross-sectional view showing an example of the inner region of the substrate and the mask layer. [Figure 10] It is a cross-sectional view showing an example of the second region of the mask layer. [Figure 11] It is a cross-sectional view showing an example of the process of forming the intermediate layer. [Figure 12] It is a cross-sectional view showing an example of the process of forming the first resist layer. [Figure 13] It is a cross-sectional view showing an example of the process of forming the mask layer. [Figure 14] It is a cross-sectional view showing an example of the process of forming the protective layer and the second resist layer. [Figure 15] It is a cross-sectional view showing an example of the process of processing the substrate. [Figure 16] It is a cross-sectional view showing an example of the process of forming the third resist layer. [Figure 17] It is a cross-sectional view showing an example of the process of processing the substrate. [Figure 18] It is a cross-sectional view showing an example of the process of removing a part of the intermediate layer. [Figure 19] It is a cross-sectional view showing an example of the process of removing the third resist layer and the protective layer. [Figure 20] It is a cross-sectional view showing an example of the process of measuring the position in the thickness direction of the mask. [Figure 21] It is a cross-sectional view showing an example of the process of adjusting the angle of the substrate. [Figure 22] It is a cross-sectional view showing the process of fixing the mask to the first frame. [Figure 23] It is a plan view showing an example of the second frame. [Figure 24] It is a cross-sectional view showing an example of the process of adjusting the angle of the substrate. [Figure 25] It is a plan view showing an example of the second frame. [Figure 26]It is a plan view showing an example of a mask when viewed from the side of the incident surface. [Figure 27] It is a cross-sectional view showing an example of the outer region of the substrate. [Figure 28] It is a cross-sectional view showing an example of the outer region of the substrate and the first frame. [Figure 29] It is a cross-sectional view showing an example of the outer region of the substrate. [Figure 30] It is a cross-sectional view showing an example of the outer region of the substrate. [Figure 31] It is a cross-sectional view showing an example of the outer region of the substrate and the first frame. [Figure 32] It is a cross-sectional view showing an example of the outer region of the substrate. [Figure 33] It is a cross-sectional view showing an example of the outer region of the substrate. [Figure 34] It is a cross-sectional view showing an example of the outer region of the substrate. [Figure 35] It is a cross-sectional view showing an example of a mask apparatus.

Embodiments for Carrying Out the Invention

[0009] In this specification and the drawings, unless otherwise specifically explained, terms such as "substrate", "sheet", "film", etc., which mean the substance that forms the basis of a certain structure, are not distinguished from each other based only on the difference in name.

[0010] In this specification and the drawings, unless otherwise specifically explained, terms that specify the shape, geometric conditions, and their degrees, such as terms like "parallel" and "orthogonal", and values of length and angle, etc., are not bound by a strict meaning, and are interpreted to include a range that allows for similar functions.

[0011] In this specification and these drawings, unless otherwise specified, when a component or region is described as being "on top of," "below," "upper side," "lower side," or "upward" or "downward" of another component or region, this includes cases where one component is in direct contact with another. Furthermore, it also includes cases where another component is located between one component and another, i.e., where they are indirectly in contact. In addition, unless otherwise specified, the terms "up," "upper side," or "upward," or "down," "lower side," or "downward," may be used with the direction of up and down reversed.

[0012] In this specification, if multiple candidate upper limits and multiple candidate lower limits are given for a certain parameter, the numerical range of that parameter may be constructed by combining any one candidate upper limit and any one candidate lower limit. For example, consider the case where it is stated that "Parameter B is, for example, A1 or greater, and may be A2 or greater, and may be A3 or greater. Parameter B is, for example, A4 or less, and may be A5 or less, and may be A6 or less." In this case, the numerical range of parameter B may be A1 or greater and A4 or less, A1 or greater and A5 or less, A1 or greater and A6 or less, A2 or greater and A4 or less, A2 or greater and A5 or less, A2 or greater and A6 or less, A3 or greater and A4 or less, A3 or greater and A5 or less, and A3 or greater and A6 or less.

[0013] In this specification and these drawings, unless otherwise specified, the state in which a face of element A "facing" a face of element B includes not only the case where a face of element A is in contact with a face of element B, but also the case where element C is located between the faces of element A and element B. In other words, the term "facing" is a term that describes the orientation of the two faces.

[0014] In this specification and these drawings, unless otherwise specified, identical or similarly functioning parts are denoted by the same or similar reference numerals, and repeated descriptions may be omitted. Furthermore, the dimensional ratios in the drawings may differ from the actual ratios for illustrative purposes, and some components may be omitted from the drawings.

[0015] Unless otherwise specified in this specification and these drawings, one embodiment described herein may be combined with other examples to the extent that it does not conflict with the original. Furthermore, other examples may be combined with each other to the extent that it does not conflict with the original.

[0016] In this specification and these drawings, unless otherwise specified, when disclosing two or more steps or processes relating to a method such as a manufacturing method, other steps or processes not disclosed may be performed between the disclosed steps or processes. Furthermore, the order of the disclosed steps or processes is arbitrary as long as it does not create a contradiction.

[0017] In one embodiment of this specification, an example is described in which a mask is used to form an organic layer or electrodes on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes for a device that displays or projects images or videos for representing virtual reality (VR) or augmented reality (AR). The mask of this embodiment may also be used to form electrodes for display devices other than organic EL displays, such as electrodes for liquid crystal displays. Furthermore, the mask of this embodiment may be used to form components of devices other than display devices, such as electrodes for pressure sensors.

[0018] A first aspect of this disclosure is a mask, A substrate comprising a first surface, a second surface located opposite the first surface, and a plurality of first openings penetrating from the first surface to the second surface, The mask layer includes a third surface facing the second surface and a fourth surface located on the opposite side of the third surface, The aforementioned substrate comprises silicon or a silicon compound. The mask layer includes a plurality of second openings that overlap the first opening in a plan view and penetrate from the third surface to the fourth surface. The substrate includes an inner region located between the plurality of first openings in a plan view, and an outer region extending along the outer edge of the substrate and surrounding the plurality of first openings and the inner region in a plan view. The first surface of the outer region is a mask that includes at least one first projection.

[0019] A second aspect of the present disclosure is a mask according to the first aspect described above, wherein the first surface of the outer region may include a first inner edge and a first outer edge, and the first projection may be located between the first inner edge and the first outer edge.

[0020] A third aspect of the present disclosure is a mask according to the first aspect described above, which may include the following aspects: The first surface of the outer region may include a first inner edge and a first outer edge, and the first projection may be located on the first inner edge.

[0021] A fourth aspect of the present disclosure is a mask according to the second or third aspect described above, which may include the following aspect: The angle formed by a hypothetical straight line tangent to the first outer edge and the first projection with respect to the first surface of the outer region may be 0.01° or more and 1.00° or less.

[0022] A fifth aspect of the present disclosure is a mask according to the first aspect described above, which may include the following aspects: The first surface of the outer region may include a first inner edge and a first outer edge, and the first projection may be located on the first outer edge.

[0023] A sixth aspect of the present disclosure is a mask according to the second or fifth aspect described above, which may include the following aspect: The angle formed by a hypothetical straight line tangent to the first inner edge and the first projection with respect to the first surface of the outer region may be 0.01° or more and 1.00° or less.

[0024] A seventh aspect of the present disclosure is a mask according to any one of the first to sixth aspects described above, wherein the first surface of the outer region may include a second projection, and the distance from the second projection to the center point of the substrate may be different from the distance from the first projection to the center point.

[0025] An eighth aspect of the present disclosure is a mask according to the seventh aspect described above, which may include the following features: the first projection may have a first height, and the second projection may have a second height smaller than the first height.

[0026] A ninth aspect of the present disclosure is a mask according to the eighth aspect described above, which may include the following aspect: The angle formed by the imaginary straight line tangent to the first projection and the second projection with respect to the first surface of the outer region may be 0.01° or more and 1.00° or less.

[0027] A tenth aspect of the present disclosure is a mask according to any one of the first to ninth aspects described above, which may include the following features: The first projection may extend continuously to surround the center point of the substrate in a plan view.

[0028] An eleventh aspect of the present disclosure may include the following aspect of a mask according to any one of the first to ninth aspects described above: The at least one first projection may include a plurality of first projections arranged to surround the center point of the substrate in a plan view.

[0029] A twelfth aspect of this disclosure is a method for manufacturing a mask device, The process of preparing the mask, The process includes a connection step of connecting the mask to the first frame, The aforementioned mask is A substrate comprising a first surface, a second surface located opposite the first surface, and a plurality of first openings penetrating from the first surface to the second surface, The mask layer includes a third surface facing the second surface and a fourth surface located on the opposite side of the third surface, The aforementioned substrate comprises silicon or a silicon compound. The mask layer includes a plurality of second openings that overlap the first opening in a plan view and penetrate from the third surface to the fourth surface. The substrate includes an inner region located between the plurality of first openings in a plan view, and an outer region extending along the outer edge of the substrate and surrounding the plurality of first openings and the inner region in a plan view. The first frame includes a first frame surface and a second frame surface located on the opposite side of the first frame surface and facing the first surface of the substrate, The connection step is a method for manufacturing a mask device, which includes an angle adjustment step of pressing a portion of the second surface of the outer region of the substrate toward the first frame to change the angle of the first surface of the substrate with respect to the second surface of the frame.

[0030] A thirteenth aspect of the present disclosure is a method for manufacturing a mask device according to the twelfth aspect described above, further comprising the following aspects: The connection step may include, after the angle adjustment step, a curing step of curing an adhesive located between the first surface of the outer region of the substrate and the second frame surface of the first frame.

[0031] A fourteenth aspect of the present disclosure is a method for manufacturing a mask device according to the twelfth or thirteenth aspect described above, comprising the following aspects: The first surface of the outer region may include at least one first projection, and in the angle adjustment step, with the first projection in contact with the second surface of the frame, the portion of the second surface of the outer region that does not overlap with the first projection in a plan view may be pressed toward the first frame.

[0032] A fifteenth aspect of the present disclosure is a method for manufacturing a mask device according to any one of the twelfth to fourteenth aspects described above, which may include the following aspect: In the angle adjustment step, the second frame in contact with the second surface of the substrate may be pressed toward the first frame.

[0033] A sixteenth aspect of the present disclosure is a method for manufacturing a mask device according to any one of the twelfth to fourteenth aspects described above, which may include the following aspect: In the angle adjustment step, a portion of the second surface of the outer region of the substrate may be pressed toward the first frame by a pin inserted into a through hole formed in the second frame that is in contact with the second surface of the substrate.

[0034] A 17th aspect of the present disclosure is a method for manufacturing a mask device according to any one of the 12th to 16th aspects described above, further comprising the following aspects: The connection step may include a measurement step of measuring the position of the mask in the thickness direction at a first reference point and a second reference point of the mask layer, and in the angle adjustment step, a portion of the second surface of the outer region of the substrate may be pressed toward the first frame such that the distance between the first reference point and the second reference point in the thickness direction is reduced.

[0035] A 18th aspect of this disclosure is a mask device, masks and, The system comprises a first frame connected to the mask, The aforementioned mask is A substrate comprising a first surface, a second surface located opposite the first surface, and a plurality of first openings penetrating from the first surface to the second surface, The mask layer includes a third surface facing the second surface and a fourth surface located on the opposite side of the third surface, The aforementioned substrate comprises silicon or a silicon compound. The mask layer includes a plurality of second openings that overlap the first opening in a plan view and penetrate from the third surface to the fourth surface. The substrate includes an inner region located between the plurality of first openings in a plan view, and an outer region extending along the outer edge of the substrate and surrounding the plurality of first openings and the inner region in a plan view. The first frame includes a first frame surface and a second frame surface located on the opposite side of the first frame surface and facing the first surface of the substrate, The first surface of the outer region is a mask device that includes a portion inclined with respect to the second surface of the frame. The first frame may include a third opening that overlaps with the plurality of first openings of the substrate in a plan view.

[0036] A 19th aspect of the present disclosure may include the following aspect of the mask device according to the 18th aspect described above: The first surface of the outer region may include at least one first projection in contact with the second surface of the frame.

[0037] One embodiment of this disclosure will be described in detail with reference to the drawings. Note that the embodiments described below are examples of embodiments of this disclosure, and this disclosure is not to be construed as being limited to these embodiments only.

[0038] This section describes an organic device 100 comprising an organic layer formed by using a mask. The organic device 100 comprises an organic layer or electrode formed by using a mask. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0039] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along the in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located opposite the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, red pixels, blue pixels, and green pixels.

[0040] The element 115 may include a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

[0041] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 may contain, for example, polyimide. The insulating layer 160 may overlap the edges of the first electrodes 120. "Plan view" means viewing the object along the direction normal to the surface of a plate-like member such as a substrate 110.

[0042] The substrate 110 may be an insulating material. The material of the substrate 110 can be, for example, a material with poor flexibility such as silicon, quartz glass, Pyrex® glass, or synthetic quartz plate, or a flexible material such as a resin film, optical resin plate, or thin glass. The substrate 110 may have a planar shape similar to that of a silicon wafer used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment that performs semiconductor manufacturing processes. For example, a first electrode 120, an insulating layer 160, etc., can be formed on the substrate 110 using equipment that performs semiconductor manufacturing processes.

[0043] The element 115 is configured to perform some function when a voltage is applied between the first electrode 120 and the second electrode 140, or when a current flows between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that constitutes an image.

[0044] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or other conductive inorganic material. The first electrode 120 may also include a transparent and conductive metal oxide, such as indium tin oxide.

[0045] The organic layer 130 contains an organic material. When the organic layer 130 is energized, it can perform some function. Energization means that a voltage is applied to the organic layer 130 or that an electric current flows through the organic layer 130. The organic layer 130 can be an emissive layer that emits light when energized, or a layer whose light transmittance or refractive index changes when energized. The organic layer 130 may also contain an organic semiconductor material.

[0046] As shown in Figure 1, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown in the figure, the organic layer 130 may also include a third organic layer included in the third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0047] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is driven. If the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and extracted to the outside from either the second electrode 140 side or the first electrode 120 side.

[0048] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0049] The second electrode 140 may contain a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, carbon, and alloys thereof. As shown in Figure 1, the second electrode 140 may extend so as to overlap two adjacent organic layers 130 in a plan view.

[0050] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Figure 2 shows a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process in which a vapor deposition material is deposited onto the target object.

[0051] As shown in Figure 2, the deposition apparatus 10 may include a deposition source 6, a heater 8, and a mask 20 inside. The deposition apparatus 10 may further include an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 10. The deposition source 6 is, for example, a crucible. The deposition source 6 contains a deposition material 7, such as an organic material or a metallic material. The heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere.

[0052] The mask 20 includes an incident surface 201, an exit surface 202, a plurality of first apertures 31, and a plurality of second apertures 41. The incident surface 201 faces the deposition source 6. The exit surface 202 is located on the opposite side of the incident surface 201. The exit surface 202 faces the first surface 111 of the substrate 110. The first aperture 31 is located on the incident surface 201. The second aperture 41 is located on the exit surface 202. The first aperture 31 and the second aperture 41 are connected in the thickness direction of the mask 20. The plurality of second apertures 41 overlap one first aperture 31 in a plan view. A portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the first apertures 31 and the second apertures 41 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110. With respect to the mask 20, "plan view" means viewing the mask 20 along the direction normal to the second surface 302 of the substrate 30. With respect to the mask device described later, "plan view" means viewing the mask device along the direction normal to the second surface of the frame of the first frame.

[0053] As shown in Figure 2, the deposition apparatus 10 may be equipped with a magnet 5 positioned on the second surface 112 side of the substrate 110. If the mask 20 contains a magnetic material, the magnet 5 can pull the mask 20 toward the substrate 110 by magnetic force. This reduces or eliminates the gap between the mask 20 and the substrate 110. This suppresses the occurrence of shadows during the deposition process. In this application, a shadow is a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. Shadows are caused by the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, etc.

[0054] The mask 20 may be supported by a first frame 60. The first frame 60 may be located on the incident surface 201 of the mask 20. The first frame 60 includes a first frame surface 601 and a second frame surface 602. A portion of the second frame surface 602 faces the incident surface 201 of the mask 20. The first frame surface 601 is located on the opposite side of the second frame surface 602.

[0055] The first frame 60 has a third opening 61 that penetrates from the first surface 601 of the frame to the second surface 602 of the frame. The single third opening 61 overlaps with the multiple first openings 31 in a plan view. The device comprising the mask 20 and the first frame 60 is also referred to as the mask device 15.

[0056] The first frame 60 includes an outer surface 603 and an inner surface 604. The inner surface 604 is the surface of the first frame 60 that faces the third opening 61. The outer surface 603 defines the outer edge of the first frame 60 in a plan view.

[0057] Next, the mask 20 and the mask device 15 will be described in detail. Figure 3 is a plan view showing an example of the mask device 15 as seen from the side of the incident surface 201. Figure 4 is a plan view showing an example of the mask device 15 as seen from the side of the exit surface 202. Figure 5 is a cross-sectional view of the mask device 15 in Figure 3 along the VV line.

[0058] As shown in Figure 5, the mask 20 comprises a base material 30, a mask layer 40, and an intermediate layer 50.

[0059] The substrate 30 includes a first surface 301, a second surface 302, a plurality of first openings 31, and a plurality of first wall surfaces 32. The first surface 301 may constitute the incident surface 201. The second surface 302 is located on the opposite side of the first surface 301. The first wall surfaces 32 are located between the first surface 301 and the second surface 302.

[0060] The first opening 31 penetrates the base material 30 from the first surface 301 to the second surface 302. As shown in Figure 3, the base material 30 may contain a plurality of first openings 31. The plurality of first openings 31 may be aligned in a first direction D1 and a second direction D2. The second direction D2 may be perpendicular to the first direction D1. The first direction D1 and the second direction D2 are directions parallel to the second surface 302 of the base material 30 of the mask 20 when it is not joined to the first frame 60.

[0061] One first aperture 31 may correspond to one device. For example, one first aperture 31 may correspond to one screen of an organic EL display device. A mask 20 containing multiple first apertures 31 can simultaneously form patterns of organic layers corresponding to multiple screens on the substrate 110. As shown in Figure 3, the first aperture 31 may have a rectangular contour in plan view.

[0062] The first wall surface 32 faces the first opening 31. In the example shown in Figure 5, the first wall surface 32 extends along the direction normal to the second surface 302.

[0063] As shown in Figures 3 and 5, the area of ​​the substrate 30 other than the first opening 31 may be divided into an outer area 35 and an inner area 36. The inner area 36 is the area of ​​the substrate 30 located between two adjacent first openings 31 in a plan view. The outer area 35 is the area of ​​the substrate 30 located between the outer edge 303 of the substrate 30 and the first opening 31 in a plan view. As shown in Figure 3, the inner area 36 may extend in a first direction D1 and a second direction D2.

[0064] As shown in Figures 3 and 4, the substrate 30 may include alignment marks 39. The alignment marks 39 are formed, for example, on the second surface 302. The alignment marks 39 may also be formed on the first surface 301. The alignment marks 39 are used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 is transparent to visible light, the alignment marks 39 can be seen through the substrate 110.

[0065] As shown in Figures 3 and 4, the alignment mark 39 may have a circular outline in plan view. Although not shown, the alignment mark 39 may have an outline other than a circle, such as a rectangle or a cross. The alignment mark 39 may be located in the outer region 35 or in the inner region 36.

[0066] The shape of the alignment mark 39 in the cross-sectional view is arbitrary. For example, the alignment mark 39 may include a recess located on the first surface 301 or the second surface 302. The alignment mark 39 may include a hole penetrating from the first surface 301 to the second surface 302. The recess and hole may be formed by etching the first surface 301 or the second surface 302. The recess and hole may also be formed by irradiating the first surface 301 or the second surface 302 with a laser. For example, the alignment mark 39 may include a layer located on the first surface 301 or the second surface 302. The layer is formed of a material different from the substrate 30. The alignment mark 39 may be formed on a layer other than the substrate 30.

[0067] The substrate 30 contains silicon or a silicon compound. The substrate 30 is manufactured, for example, by processing a silicon wafer. As shown in Figure 3, the outer edge 303 of the substrate 30 may include a linear portion. The linear portion is also called an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also called a notch. The orientation flat and notch represent the crystal orientation of the silicon wafer. The substrate 30 may have light-transmitting properties used in the heating process described later. The silicon compound is, for example, glass such as quartz glass.

[0068] The maximum dimension S1 of the base material 30 in plan view is, for example, 100 mm or more, may be 150 mm or more, or 200 mm or more. The dimension S1 is, for example, 500 mm or less, may be 400 mm or less, or 300 mm or less.

[0069] The dimension S2 of the first opening 31 in the direction in which the first openings 31 are aligned is, for example, 5 mm or more, may be 10 mm or more, or may be 20 mm or more. The dimension S2 is, for example, 100 mm or less, may be 50 mm or less, or may be 30 mm or less.

[0070] The spacing S3 between two first openings 31 in the direction in which the first openings 31 are aligned is, for example, 0.1 mm or more, may be 0.5 mm or more, or may be 1.0 mm or more. The spacing S3 is, for example, 20 mm or less, may be 15 mm or less, or may be 10 mm or less.

[0071] The thickness of the substrate 30 is defined as the maximum thickness T1 of the outer region 35. The thickness T1 is, for example, 50 μm or more, may be 100 μm or more, or 200 μm or more. The thickness T1 is, for example, 1000 μm or less, may be 800 μm or less, or 600 μm or less.

[0072] Next, the mask layer 40 will be described. As shown in Figure 5, the mask layer 40 includes a third surface 401, a fourth surface 402, and a plurality of second openings 41. The third surface 401 faces the second surface 302 or the first opening 31 of the substrate 30. The fourth surface 402 is located on the opposite side of the third surface 401 in the thickness direction of the substrate 30. The fourth surface 402 may constitute the exit surface 202 of the mask 20.

[0073] The second aperture 41 penetrates from the third surface 401 to the fourth surface 402. One second aperture 41 corresponds to one vapor-deposited layer. The vapor-deposited layer is, for example, an organic layer 130. A group of regularly arranged second apertures 41 corresponds to one screen of the organic EL display device. As shown in Figures 3 and 4, a group of regularly arranged second apertures 41 may overlap a single first aperture 31 in a plan view.

[0074] As shown in Figures 4 and 5, the mask layer 40 may include a plurality of first regions 43 and second regions 44 in a plan view. In other words, the mask layer 40 may be divided into a plurality of first regions 43 and second regions 44 in a plan view. The first region 43 is the region of the mask layer 40 that overlaps the first opening 31 in a plan view.

[0075] The second region 44 is a region located between or outside of the multiple first regions 43 in a plan view. "Outside" refers to the side away from the center point of the mask 20 in a plan view. "Inside" refers to the side approaching the center point of the mask 20 in a plan view.

[0076] The intermediate layer 50 will now be described. The intermediate layer 50 is a layer located between the second surface 302 of the base material 30 and the third surface 401 of the mask layer 40 in the thickness direction of the mask 20. In a plan view, the intermediate layer 50 is positioned to overlap the inner region 36 of the base material 30. In a plan view, the intermediate layer 50 may be positioned to overlap both the inner region 36 and the outer region 35 of the base material 30. Although not shown in the figures, a portion of the intermediate layer 50 may be positioned to overlap the first opening 31 of the base material 30.

[0077] The first frame 60 will now be described. The first frame 60 is a component connected to the mask 20 for the purpose of gripping the mask 20 when handling it, for example, when moving the mask 20. By connecting the first frame 60 to the mask 20, the handling of the mask 20 becomes easier.

[0078] As shown in Figure 5, the first frame 60 is connected to the outer region 35 of the substrate 30. For example, the second frame surface 602 of the first frame 60 may be connected to the first surface 301 of the outer region 35 of the substrate 30. An adhesive layer 70 may be placed between the first surface 301 of the outer region 35 and the second frame surface 602 of the first frame 60. That is, the first frame 60 may be connected to the substrate 30 via the adhesive layer 70.

[0079] In a plan view, the first frame 60 does not overlap with the first opening 31 of the base material 30. Also in a plan view, at least a portion of the first frame 60 extends outside the outer edge 303 of the base material 30. This expands the area for gripping when handling the mask 20. The first frame 60 may include a region that extends circumferentially outside the outer edge 303 of the base material 30 in a plan view. The first frame 60 may include an outer surface 603 that surrounds the outer edge 303 of the base material 30 in a plan view.

[0080] Figure 6 is a cross-sectional view showing an example of the outer region 35 of the substrate 30 and the first frame 60.

[0081] The first frame 60 may contain glass or metal materials. Glass materials include quartz glass, borosilicate glass, alkali-free glass, soda glass, etc. Metal materials include Invar, SUS430, SUS304, and other types of stainless steel. By including these materials in the first frame 60, the rigidity of the first frame 60 can be made higher than that of the base material 30. The material of the first frame 60 may be determined to ensure that the first frame 60 has the necessary rigidity, taking into consideration the gripping force of the operator or robot hand handling the mask device 15.

[0082] The linear thermal expansion coefficient of the first frame 60 is preferably about the same as that of the base material 30. This suppresses the occurrence of a difference in the elongation rates of the first frame 60 and the base material 30 when the mask device 15 is heated. The absolute value of the difference between the linear thermal expansion coefficient of the first frame 60 and the linear thermal expansion coefficient of the base material 30 is, for example, 15 ppm / °C or less, but may also be 10 ppm / °C or less, or 5.0 ppm / °C or less.

[0083] The thickness T5 of the first frame 60 is, for example, 500 μm or more, and may be 1 mm or more, or 5 mm or more. The thickness T5 is, for example, 30 mm or less, and may be 20 mm or less, or 10 mm or less.

[0084] The adhesive layer 70 fixes the first frame 60 to the substrate 30. The adhesive layer 70 may include a surface in contact with the first surface 301 and a surface in contact with the second surface 602 of the frame. Although not shown, the masking device 15 may include a layer located between the second surface 602 of the first frame 60 and the adhesive layer 70. Although not shown, the masking device 15 may include a layer located between the first surface 301 of the substrate 30 and the adhesive layer 70.

[0085] The adhesive layer 70 may contain glass material, inorganic material, metal material, or resin material. The adhesive layer 70 may be formed from glass frit, glass paste, solder paste, conductive paste, epoxy resin, polyimide, acrylic resin, etc. To suppress outgassing from the adhesive layer 70 during the vapor deposition process in the vapor deposition apparatus 10, for example, Alemco Products' high heat-resistant epoxy adhesive "Alemco Bond 526N" or Kyoritsu Chemical Industry Co., Ltd.'s UV-curing adhesive "WORLDROCK® 5910 (product number)" or "WORLDROCK® 8723K9B (product number)" can be used as the material for forming the adhesive layer 70. By using a material with high solvent resistance as the material for forming the adhesive layer 70, it is possible to suppress the risk that the adhesive layer 70, which comes into contact with the cleaning solution when the mask apparatus 15 used in the vapor deposition process is cleaned to remove the vapor deposition material, may deform and cause the first frame 60 to unintentionally separate from the mask 20. For example, ThreeBond's UV-curing adhesive "ThreeBond® 3026E (product name)" can be used as the material for forming the adhesive layer 70.

[0086] The thickness of the adhesive layer 70 is, for example, 0.05 μm or more, may be 1 μm or more, may be 5 μm or more, or may be 10 μm or more. The thickness of the adhesive layer 70 is, for example, 100 μm or less, may be 50 μm or less, or may be 20 μm or less.

[0087] The base material 30 will now be described. As shown in Figure 6, the first surface 301 of the outer region 35 of the base material 30 may include a portion that is inclined with respect to the second surface 602 of the frame. The portion of the first surface 301 that is inclined with respect to the second surface 602 of the frame is also called an inclined surface. The inclined surface may be inclined at a certain angle with respect to the second surface 602 of the frame. The inclined surface of the first surface 301 of the outer region 35 may have the largest occupancy rate on the first surface 301 of the outer region 35. In other words, the portion that is inclined at a certain angle with respect to the second surface 602 of the frame and has the largest occupancy rate on the first surface 301 of the outer region 35 may be identified as the inclined surface.

[0088] The occupancy rate of the inclined surface on the first surface 301 of the outer region 35 is, for example, 30% or more, may be 40% or more, or may be 50% or more. The occupancy rate of the inclined surface on the first surface 301 of the outer region 35 is, for example, 90% or less, may be 80% or less, or may be 70% or less.

[0089] In Figure 6, the symbol θ1 represents the inclination angle of the inclined surface of the first surface 301 of the outer region 35 with respect to the second surface 602 of the frame. In the example shown in Figure 6, the outer region 35 is inclined with respect to the second surface 602 of the frame such that the gap between the first surface 301 of the outer region 35 and the second surface 602 of the first frame 60 widens as it moves inward. In this case, the inclination angle θ1 is also called the back inclination angle θ1. In Figure 6, the line denoted by the symbol HL is a hypothetical straight line parallel to the second surface 602 of the frame.

[0090] The backward tilt angle θ1 of the outer region 35 is, for example, 0.01° or more, may be 0.05° or more, may be 0.10° or more, or may be 0.20° or more. The backward tilt angle θ1 of the outer region 35 is, for example, 1.00° or less, may be 0.80° or less, may be 0.60° or less, or may be 0.40° or less.

[0091] In Figure 6, the symbol ΔZ1 represents the distance in the thickness direction D3 between the outer region 35 and the inner region 36 that are facing each other in the first direction D1 within a single first opening 31. The thickness direction D3 is the normal direction to the second surface 302 of the base material 30. The position of the outer region 35 in the thickness direction D3 is determined by the position of the second surface 302 in contact with the first wall surface 32. The position of the inner region 36 in the thickness direction D3 is determined by the position of the second surface 302 in contact with the first wall surface 32. As shown in Figure 6, if the outer region 35 has a backward tilt angle θ1, the inner region 36 can be positioned above the outer region 35. The distance ΔZ1 is also referred to as the push-up distance ΔZ1.

[0092] The push-up distance ΔZ1 of the substrate 30 is, for example, 0.1 μm or more, may be 0.5 μm or more, may be 2.0 μm or more, or may be 10.0 μm or more. The push-up distance ΔZ1 of the substrate 30 is, for example, 50.0 μm or less, may be 40.0 μm or less, may be 30.0 μm or less, or may be 20.0 μm or less.

[0093] In conventional masking devices, when deflection occurs in the substrate 30 due to its own weight, the inner region 36 is generally located lower than the outer region 35. As a result, the positions of the multiple second openings 41 of the mask layer 40 in the thickness direction D3 fluctuate according to the positions of the second openings 41 in a plan view. The greater the fluctuation in the positions of the multiple second openings 41 in the thickness direction D3, the more difficult it becomes to adjust the positions of the multiple second openings 41 of the mask layer 40 relative to the substrate 110.

[0094] In this embodiment, since the outer region 35 has a backward tilt angle θ1, a portion of the inner region 36 is pushed up relative to the outer region 35 in the thickness direction D3. Part of the positional variation of the mask layer 40 in the thickness direction D3, caused by the deflection of the outer region 35 due to its own weight, is canceled out by the backward tilt angle θ1. As a result, the amount of positional variation of the multiple second openings 41 in the thickness direction D3 is suppressed. This suppression of variation makes it easier to adjust the position of the multiple second openings 41 of the mask layer 40 relative to the substrate 110.

[0095] The amount of variation in the position of the multiple second openings 41 in the thickness direction D3 may be evaluated based on the distance in the thickness direction D3 between the first reference point and the second reference point P2 of the mask 20.

[0096] As shown in Figure 5, the second reference point P2 is the center point of the mask 20 in a plan view. The position of the second reference point P2 in the thickness direction D3 is measured at the exit surface 202.

[0097] The first reference point is located on a straight line passing through the center point of the mask 20 in a plan view, and is a point on the outer edge of the second opening 41 that is closest to the outer edge of the mask 20. The mask 20 may include multiple first reference points. For example, the first reference points of the mask 20 may include an 11th reference point P11 and a 12th reference point P12, as shown in Figure 5. The 11th reference point P11 and the 12th reference point P12 are each located on a straight line passing through the center point of the mask 20 in a plan view and extending in a first direction D1, and are points on the outer edge of the second opening 41 that is closest to the outer edge of the mask 20. As shown in Figure 5, the positions of the 11th reference point P11 and the 12th reference point P12 in the thickness direction D3 are measured at the exit surface 202. Although not shown, the mask 20 may include three or more first reference points.

[0098] Figure 7 is a cross-sectional view showing an example of the outer region 35 of the base material 30. The first surface 301 of the outer region 35 may include at least one first projection 37. The first projection 37 is a portion of the first surface 301 that protrudes toward the second surface 602 of the first frame 60. The first projection 37 has a first height H1. The user of the mask 20 can tilt the first surface 301 relative to the second surface 602 of the frame by utilizing the first projection 37.

[0099] The first height H1 of the first projection 37 is, for example, 1.0 μm or more, may be 2.0 μm or more, may be 3.0 μm or more, or may be 5.0 μm or more. The first height H1 of the first projection 37 is, for example, 500 μm or less, may be 100 μm or less, may be 50 μm or less, or may be 10 μm or less.

[0100] The first surface 301 of the outer region 35 includes a first outer edge 3011 and a first inner edge 3012. The first outer edge 3011 is the outermost edge of the first surface 301 of the outer region 35 in a plan view. The first outer edge 3011 is in contact with the outer edge 303. The first inner edge 3012 is the innermost edge of the first surface 301 of the outer region 35 in a plan view. The first inner edge 3012 is in contact with the first wall surface 32. As shown in Figure 7, the first projection 37 may be located between the first outer edge 3011 and the first inner edge 3012.

[0101] The first projection 37 may include a flat surface 371. The flat surface 371 may extend parallel to the portion of the first surface 301 that constitutes an inclined surface when the mask 20 is connected to the first frame 60. If the first projection 37 includes a flat surface 371, the first height H1 is the distance between the flat surface 371 and the portion of the first surface 301 that constitutes an inclined surface when the mask 20 is connected to the first frame 60.

[0102] In Figure 7, the symbol θ10 represents the angle that the straight line SL1 makes with respect to the first surface 301 of the outer region 35. The straight line SL1 is a hypothetical straight line tangent to the first outer edge 3011 and the first projection 37. The aforementioned backward tilt angle θ1 is maximized when both the first outer edge 3011 and the first projection 37 are tangent to the second surface 602 of the first frame 60. The angle θ10 is also referred to as the maximum backward tilt angle θ10.

[0103] The maximum backward tilt angle θ10 is, for example, 0.01° or more, may be 0.05° or more, may be 0.10° or more, or may be 0.20° or more. The maximum backward tilt angle θ10 is, for example, 1.00° or less, may be 0.90° or less, may be 0.80° or less, or may be 0.70° or less.

[0104] In Figure 7, the symbol K1 represents the distance from the first outer edge 3011 to the first projection 37 in the first direction D1. The larger the ratio of the first height H1 to the distance K1, the larger the maximum backward tilt angle θ10.

[0105] In Figure 7, the sign θ20 represents the angle that the straight line SL2 makes with respect to the first surface 301 of the outer region 35. The straight line SL2 is a hypothetical straight line tangent to the first inner edge 3012 and the first projection 37. As will be described later, the first surface 301 of the outer region 35 may be inclined with respect to the second surface 602 of the frame such that the gap between the first surface 301 of the outer region 35 and the second surface 602 of the frame of the first frame 60 narrows as it moves inward. In this case, the inclination angle of the first surface 301 of the outer region 35 is also called the forward inclination angle. The angle θ20 is also called the maximum forward inclination angle θ20.

[0106] The maximum forward tilt angle θ20 is, for example, 0.01° or more, may be 0.05° or more, may be 0.10° or more, or may be 0.20° or more. The maximum forward tilt angle θ20 is, for example, 1.00° or less, may be 0.90° or less, may be 0.80° or less, or may be 0.70° or less.

[0107] In Figure 7, the symbol K2 represents the distance from the first inner edge 3012 to the first projection 37 in the first direction D1. The larger the ratio of the first height H1 to the distance K2, the larger the maximum forward tilt angle θ20.

[0108] Figure 8 is a plan view showing an example of the mask 20 as seen from the incident surface. The first projection 37 may extend continuously to surround the center point of the base material 30 in a plan view. The first projection 37 may also extend parallel to the outer edge 303 in a plan view.

[0109] As shown in Figure 8, the inner region 36 of the base material 30 may include a plurality of first rib regions 361 and a plurality of second rib regions 362 in a plan view. The first rib region 361 is the portion of the inner region 36 extending in a first direction D1. The second rib region 362 is the portion of the inner region 36 extending in a second direction D2. Each of the plurality of first openings 31 is surrounded in a plan view by two first rib regions 361 and two second rib regions 362.

[0110] Figure 9 is a cross-sectional view showing an example of the inner region 36 of the substrate 30 and the mask layer 40. The intermediate layer 50 includes a layer that performs some function for the substrate 30 or the mask layer 40. For example, the intermediate layer 50 may include a stopper layer that stops etching in the process of processing the substrate 30 by etching. The stopper layer has resistance to etchants that etch the substrate 30. The stopper layer may include nickel, copper, titanium, aluminum, iron, or alloys thereof. For example, the stopper layer may include an iron alloy containing nickel. An example of an iron alloy containing nickel is permalloy. Permalloy is an iron alloy containing 35% to 80% by weight of nickel. The stopper layer may also include an inorganic compound such as silicon oxide. The stopper layer can suppress the etching of the mask layer 40 in the process of processing the substrate 30.

[0111] The intermediate layer 50 may include an adhesion layer to enhance the adhesion between the substrate 30 and the mask layer 40. The adhesion layer may contain titanium or a titanium alloy. The intermediate layer 50 may also include a stopper layer and an adhesion layer.

[0112] The thickness T3 of the intermediate layer 50 is, for example, 0.01 μm or more, may be 0.03 μm or more, or 0.05 μm or more. The thickness T3 of the intermediate layer 50 is, for example, 10 μm or less, may be 1.0 μm or less, or 0.10 μm or less.

[0113] The intermediate layer 50 may be positioned so as not to overlap the second opening 41 of the mask layer 40 in a plan view. This can suppress the occurrence of shadows caused by the intermediate layer 50. The intermediate layer 50 may be positioned so as not to overlap the first opening 31 of the substrate 30 in a plan view. Although not shown in the figures, the intermediate layer 50 may include a portion that overlaps the first opening 31 of the substrate 30 in a plan view.

[0114] The mask layer 40 includes a second wall surface 42 facing the second opening 41. The symbol S6 represents the distance in the planar direction of the substrate 30 between the second wall surface 42 of the mask layer 40 and the first wall surface 32 of the substrate 30. The distance S6 is, for example, 1.0 μm or more, may be 2.0 μm or more, or 3.0 μm or more. The distance S6 is, for example, 10.0 μm or less, may be 7.0 μm or less, or 5.0 μm or less.

[0115] Figure 10 is a cross-sectional view showing an example of a first region 43 of the mask layer 40. The second region 44 may include a metal layer. The first region 43 may consist only of a metal layer. The layer configuration of the first region 43 may be the same as that of the second region 44.

[0116] The symbol R1 represents the dimension of the second opening 41 on the third surface 401. The symbol R2 represents the dimension of the second opening 41 on the fourth surface 402. Dimension R1 is also referred to as the first dimension. Dimension R2 is also referred to as the second dimension. The dimensions of the vapor-deposited layer formed on the substrate 110 by the vapor deposition process using the mask 20 are determined according to the second dimension R2.

[0117] The first dimension R1 may be greater than the second dimension R2. In other words, the second dimension R2 may be less than the first dimension R1. This helps to suppress the occurrence of shadows in the vicinity of the second wall surface 42. The first dimension R1 and the second dimension R2 are determined in the direction in which the second openings 41 are aligned.

[0118] As shown in Figure 10, the second wall surface 42 may include a tapered surface 42a that widens away from the center of the second opening 41 as it moves from the fourth surface 402 toward the third surface 401. By including the tapered surface 42a in the second wall surface 42, dimension R1 can be made larger than dimension R2.

[0119] In Figure 10, the symbol S8 represents the width of the tapered surface 42a in the direction in which the second openings 41 are aligned. The width S8 is, for example, 0.2 μm or more, may be 0.5 μm or more, or may be 1.0 μm or more. The width S8 is, for example, 25 μm or less, may be 20 μm or less, or may be 10 μm or less.

[0120] In Figure 10, the symbol φ1 represents the angle formed by the second wall surface 42 and the fourth surface 402. The angle φ1 is, for example, 50° or more, may be 55° or more, or may be 60° or more. The angle φ1 is, for example, less than 90°, may be 85° or less, or may be 80° or less.

[0121] The thickness T2 of the mask layer 40 is smaller than the thickness T1 of the substrate 30. The thickness T2 is, for example, 25.0 μm or less, may be 10.0 μm or less, or 5.0 μm or less. This suppresses the occurrence of shadows. The thickness T2 is, for example, 0.5 μm or more, may be 1.0 μm or more, or 2.0 μm or more. This suppresses the occurrence of defects such as pinholes or deformations in the effective region 431.

[0122] The spacing S5 between the two second wall surfaces 42 in the direction in which the second openings 41 are aligned is, for example, 1.0 μm or more, may be 2.0 μm or more, or may be 3.0 μm or more. The spacing S5 is, for example, 25.0 μm or less, may be 10.0 μm or less, or may be 5.0 μm or less.

[0123] The metal layer of the mask layer 40 may contain a magnetic material or a non-magnetic material. Examples of magnetic materials include nickel, iron, cobalt, and alloys thereof. Examples of non-magnetic materials include copper, aluminum, titanium, chromium, and alloys thereof.

[0124] The mask layer 40 may include a seed layer. The seed layer is a layer that carries charge to the plating solution when forming a metal layer by electroplating. The seed layer may contain a metal. Examples of metals include nickel, copper, titanium, aluminum, and alloys thereof. The seed layer may consist of one layer or multiple layers.

[0125] The thickness of the seed layer is, for example, 2.0 nm or more, may be 10.0 nm or more, or 30.0 nm or more. The thickness of the seed layer is, for example, 5.0 μm or less, may be 1.0 μm or less, or 150 nm or less.

[0126] The thickness of each layer, the dimensions of each component, and the spacing are measured by observing a cross-sectional image of the mask 20 using a scanning electron microscope.

[0127] Next, a method for manufacturing the mask 20 will be described. First, a substrate 30 is prepared. A silicon wafer may be used as the substrate 30. The first surface 301 and the second surface 302 of the substrate 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientations of the first surface 301 and the second surface 302 may be (100) and (110), etc.

[0128] Next, as shown in Figure 11, an intermediate layer 50 is formed on the second surface 302 of the substrate 30. The intermediate layer 50 may be formed over the entire second surface 302. The intermediate layer 50 may be formed by a physical deposition method such as sputtering, vapor deposition, or ion plating.

[0129] Next, a step is performed to form a first resist layer 55 on the intermediate layer 50. For example, a dry film resist may be attached to the intermediate layer 50. For example, a solution containing a resist material may be applied onto the intermediate layer 50. The first resist layer 55 may contain a positive-type resist material or a negative-type resist material. If the first resist layer 55 contains an inorganic compound such as silicon oxide, the first resist layer 55 may be formed by a vapor phase growth method such as CVD. Next, a step is performed to process the first resist layer 55. Figure 12 is a cross-sectional view showing the processed first resist layer 55. The first resist layer 55 includes a plurality of island portions 573. The second opening 41 of the mask 20 described above is formed at the location of the island portions 573.

[0130] The method for processing the first resist layer 55 is not particularly limited. For example, if the first resist layer 55 is photosensitive, the first resist layer 55 may be processed by exposure and development. For example, if the first resist layer 55 contains a silicon compound, the first resist layer 55 may be processed by dry etching using an etching gas. Dry etching may also be reactive ion etching.

[0131] Next, a step of forming a mask layer 40 is carried out. The mask layer 40 is formed in the gaps 574 between the multiple island portions 573 of the first resist layer 55. The mask layer 40 is also formed on the outside of the multiple island portions 573. The mask layer 40 may also be formed by a plating step. In the plating step, a plating solution containing ions of the metal constituting the mask layer 40 is supplied to the gaps 574 of the first resist layer 55. The plating step may be an electrolytic plating step or an electroless plating step. If an electrolytic plating step is carried out, a seed layer may be formed on the intermediate layer 50. Alternatively, the intermediate layer 50 may function as a seed layer.

[0132] Next, the process of removing the first resist layer 55 is carried out. Figure 13 is a cross-sectional view showing an example of the mask layer 40 after the first resist layer 55 has been removed.

[0133] Next, a substrate processing step is performed to process the substrate 30. The substrate processing step may include a projection forming step to form a first projection 37, and an opening forming step to form a first opening 31 in the substrate 30.

[0134] In the protrusion formation process, as shown in Figure 14, a second resist layer 71 may be formed on a portion of the first surface 301 of the substrate 30. As shown in Figure 14, a protective layer 75 may be formed to cover the mask layer 40.

[0135] The second resist layer 71 may be a photoresist. In this case, first, the second resist layer 71 is formed on the first surface 301 by coating it with a liquid resist material. After coating, a step of heating the second resist layer 71 may be performed. Subsequently, a photolithography process is performed to expose and develop the second resist layer 71. As a result, the second resist layer 71 is formed on a portion of the first surface 301 corresponding to the first protrusion 37.

[0136] The second resist layer 71 may be a silicon oxide film partially formed on the first surface 301. The silicon oxide film is formed, for example, by partially performing a thermal oxidation treatment on the first surface 301. The silicon oxide film may be formed on the substrate 30 before the intermediate layer 50 is laminated onto the substrate 30.

[0137] Next, as shown in Figure 15, the first surface 301 of the substrate 30 is etched. By etching the portion of the substrate 30 that is not covered by the second resist layer 71, the first protrusion 37 is formed on the first surface 301. Etching may also be performed using dry etching with an etching gas.

[0138] Next, an opening formation process is carried out. In the opening formation process, as shown in Figure 16, a third resist layer 72 may be partially formed on the first surface 301. A resist opening 721 is formed in the portion of the third resist layer 72 corresponding to the first opening 31.

[0139] The third resist layer 72 may be a photoresist or a silicon oxide film.

[0140] In the opening formation process, as shown in Figure 17, a first opening 31 is formed in the substrate 30 by etching the substrate 30 from the first surface 301 side. The etching may be dry etching using an etching gas. If the intermediate layer 50 has resistance to the etchant, the etching is prevented from progressing to the mask layer 40, as shown in Figure 17. The etching gas is, for example, SF6 gas.

[0141] Next, as shown in Figure 18, an intermediate layer removal process is performed to remove a portion of the intermediate layer 50. The intermediate layer removal process is carried out by supplying an etchant for the intermediate layer 50 to the first aperture 31. The intermediate layer 50 that overlaps the first aperture 31 in a plan view is removed. The removal of the intermediate layer 50 may be carried out by dry etching using an etching gas. Dry etching may also be performed by reactive ion etching.

[0142] Next, the third resist layer 72 and the protective layer 75 are removed. This yields the mask 20. The order of these steps is not particularly limited. Figure 19 is a cross-sectional view showing the mask 20 after the third resist layer 72 and the protective layer 75 have been removed.

[0143] Next, a connection process is performed to connect the mask 20 to the first frame 60. The connection process includes, for example, a measurement process, an angle adjustment process, and a fixing process.

[0144] In the measurement process, the position of the mask 20 in the thickness direction D3 is measured at the first reference points P11, P12 and the second reference point P2. Figure 20 is a cross-sectional view showing an example of the measurement process. In the measurement process, the mask 20 is positioned so that the first projection 37 of the base material 30 is in contact with the second frame surface 602 of the first frame 60. In the measurement process, the portion of the base material 30 other than the first projection 37 does not need to be in contact with the second frame surface 602 of the first frame 60.

[0145] In the measurement process, the position of the mask 20 in the thickness direction D3 may be measured at the first reference points P11, P12 and the second reference point P2 using a laser displacement meter 80. The laser displacement meter 80 emits a laser L1 toward the fourth surface 402 of the mask layer 40 of the mask 20. The laser L1 may travel along the normal direction of the fourth surface 402 and be incident on the fourth surface 402. The laser displacement meter 80 detects the light L2 that is reflected by the mask layer 40 and returns to the laser displacement meter 80. Based on the angle of the light L2 incident on the laser displacement meter 80, the laser displacement meter 80 may calculate the position in the thickness direction D3 of the portion of the fourth surface 402 that was incident on by the laser L1.

[0146] Based on the positions of the first reference points P11, P12 and the second reference point P2 in the thickness direction D3 of the mask 20, the 11th distance ΔZ11 and the 12th distance ΔZ12 are calculated. The 11th distance ΔZ11 is the distance in the thickness direction D3 between the 11th reference point P11 and the second reference point P2. The 12th distance ΔZ12 is the distance in the thickness direction D3 between the 12th reference point P12 and the second reference point P2.

[0147] In the angle adjustment process, as shown in Figure 21, a portion of the second surface 302 of the outer region 35 of the base material 30 is pressed toward the first frame 60. For example, a portion of the second surface 302 adjacent to the 11th reference point P11 may be pressed toward the first frame 60 with a force F11. For example, a portion of the second surface 302 adjacent to the 12th reference point P12 may be pressed toward the first frame 60 with a force F12. The pressing changes the angle of the first surface 301 of the base material 30 with respect to the second surface 602 of the frame.

[0148] In the angle adjustment process, with the first projection 37 in contact with the second surface 602 of the frame, a portion of the second surface 302 of the outer region 35 that does not overlap with the first projection 37 in a plan view may be pressed toward the first frame 60. As shown in Figure 21, when a portion of the outer region 35 located outside the first projection 37 in a plan view is pressed, the inner region 36 is pushed up relative to the outer region 35, resulting in an upward push distance ΔZ1.

[0149] The angle of the first surface 301 of the substrate 30 with respect to the second surface 602 of the frame is adjusted so that the distance in the thickness direction D3 between the first reference points P11, P12 and the second reference point P2 is small. For example, the angle adjustment process may be performed so that both the 11th distance ΔZ11 and the 12th distance ΔZ12 are less than or equal to the first threshold. The first threshold is, for example, 10.0 μm, but may also be 7.0 μm, 5.0 μm, or 3.0 μm.

[0150] As shown in Figure 21, during the angle adjustment process, the second frame 65, which is in contact with the second surface 302 of the base material 30, may be pressed toward the first frame 60. The pressing of the second frame 65 causes a portion of the second surface 302 of the outer region 35 of the base material 30 to be pressed toward the first frame 60.

[0151] As shown in Figure 21, during the angle adjustment process, the outer region 35 may be pressed so that the first outer edge 3011 of the first surface 301 of the base material 30 does not come into contact with the second frame surface 602 of the first frame 60. Although not shown, during the angle adjustment process, the outer region 35 may be pressed so that the first outer edge 3011 of the first surface 301 of the base material 30 comes into contact with the second frame surface 602 of the first frame 60. When the first outer edge 3011 of the first surface 301 of the base material 30 comes into contact with the second frame surface 602 of the first frame 60, the backward tilt angle θ1 is equal to the maximum backward tilt angle θ10.

[0152] After the angle adjustment process, a fixing process is performed. In the fixing process, the base material 30 is fixed to the first frame 60. The base material 30 may be fixed to the first frame 60 while maintaining the angle adjusted in the angle adjustment process.

[0153] The fixing process may include a coating process and a curing process. In the coating process, an adhesive is applied between the first surface 301 of the outer region 35 of the substrate 30 and the second surface 602 of the frame of the first frame 60. The adhesive is, for example, photocurable.

[0154] In the curing process, the adhesive is cured. If the adhesive is photocurable, light such as ultraviolet light is irradiated onto the adhesive. The light irradiation causes the adhesive to cure and an adhesive layer 70 is formed. In this way, a mask device 15 is obtained which includes a base material 30 that contains an outer region 35 that is tilted with respect to the first frame 60.

[0155] Figure 23 is a plan view showing an example of a second frame 65. The second frame 65 may be located on the exit surface 202 of the mask 20. The first frame 60 includes a third frame surface 651 and a fourth frame surface 652. A portion of the third frame surface 651 faces the exit surface 202 of the mask 20. The fourth frame surface 652 is located on the opposite side of the third frame surface 651.

[0156] The second frame 65 may have a fourth opening 66 that penetrates from the third surface 651 to the fourth surface 652 of the frame. The fourth opening 66 overlaps with the multiple first openings 31 in a plan view.

[0157] After the fixing process, the second frame 65 may be separated from the mask 20. The masking device 15 in use does not necessarily have to include the second frame 65.

[0158] In this embodiment, the first surface 301 of the outer region 35 of the base material 30 of the mask 20 includes an inclined surface that is inclined with respect to the second surface 602 of the frame. For example, the outer region 35 has a backward tilt angle θ1. As a result, in the thickness direction D3, a part of the inner region 36 is pushed up relative to the outer region 35. A portion of the positional variation of the mask layer 40 in the thickness direction D3, caused by the deflection of the outer region 35 due to its own weight, is canceled out by the backward tilt angle θ1. As a result, the amount of positional variation of the multiple second openings 41 in the thickness direction D3 is suppressed.

[0159] A method for manufacturing a device using mask 20 is described. The manufacturing method comprises an alignment step and a deposition step.

[0160] In the alignment process, the position of the mask 20 relative to the substrate 110 is adjusted. The position of the mask 20 relative to the substrate 110 may be calculated based on a plurality of alignment marks 39 on the mask 20. In this embodiment, the amount of variation in the position of the plurality of second openings 41 of the mask layer 40 in the thickness direction D3, caused by the deflection of the outer region 35 due to its own weight, is suppressed. By suppressing the amount of variation, the adjustment of the position of the plurality of second openings 41 of the mask layer 40 relative to the substrate 110 is facilitated in the alignment process.

[0161] In the deposition process, the deposition material that passes through the multiple second openings 41 of the mask layer 40 adheres to the first surface 111 of the substrate 110, thereby forming multiple deposition layers on the substrate 110. The higher the positional accuracy of the multiple second openings 41, the higher the positional accuracy of the multiple deposition layers formed on the substrate 110.

[0162] The above-described embodiment can be modified in various ways. Hereinafter, modifications will be described with reference to the drawings as necessary. In the following description and the drawings used therein, parts that can be configured similarly to the above-described embodiment will be given the same reference numerals as those used for the corresponding parts in the above-described embodiment. Duplicate explanations will be omitted. Furthermore, if it is clear that the effects and advantages obtained in the above-described embodiment can also be obtained in the modifications, the explanation may be omitted.

[0163] Figure 24 is a cross-sectional view showing an example of the angle adjustment process. In the angle adjustment process, a portion of the second surface 302 of the outer region 35 of the base material 30 may be pressed toward the first frame 60 by a pin 68 inserted into a through hole 67 formed in the second frame 65. The through hole 67 may be located outside the first projection 37 in a plan view. In this case, a portion of the outer region 35 located outside the first projection 37 in a plan view is pressed by the pin 68.

[0164] Figure 25 is a plan view showing the second frame 65 of Figure 24. The second frame 65 may include a plurality of through holes 67. The plurality of through holes 67 may be arranged so as to surround the center point of the base material 30 in a plan view. "Surrounding the center point" means that the center point of the base material 30 coincides with a virtual polygon formed by connecting the plurality of through holes 67.

[0165] Figure 26 is a plan view showing an example of the mask 20 as seen from the incident surface. The substrate 30 may include a plurality of first protrusions 37 located on the first surface 301. The plurality of first protrusions 37 may be arranged so as to surround the center point of the substrate 30 in a plan view. "Surrounding the center point" means that the center point of the substrate 30 coincides with a virtual polygon formed by connecting the plurality of first protrusions 37.

[0166] Figure 27 is a cross-sectional view showing an example of the outer region 35 of the base material 30. Figure 28 is a cross-sectional view showing an example of the outer region 35 of the base material 30 and the first frame 60. The first projection 37 may include a curved surface 372. The curved surface 372 may be in contact with the second frame surface 602 of the first frame 60. Including a curved surface 372 in the first projection 37 of the base material 30 facilitates the angle adjustment process.

[0167] Figure 29 is a cross-sectional view showing an example of the outer region 35 of the base material 30. The first projection 37 may be located on the first inner edge 3012 of the first surface 301. In other words, the side surface of the first projection 37 may constitute part of the first wall surface 32. The position of the first projection 37 on the first inner edge 3012 increases the distance K1.

[0168] Figure 30 is a cross-sectional view showing an example of the outer region 35 of the base material 30. The first surface 301 of the outer region 35 may include a first projection 37 and a second projection 38. The second projection 38 is located in a different position from the first projection 37 in the radial direction of the base material 30. In other words, the distance from the second projection 38 to the center point of the base material 30 is different from the distance from the first projection to the center point. The first projection 37 and the second projection 38 may be aligned in the radial direction of the base material 30. For example, the first projection 37 and the second projection 38 may be aligned in the direction of a straight line passing through the center point of the base material 30 and extending in a first direction D1. Both the first projection 37 and the second projection 38 may be located between the first outer edge 3011 and the first inner edge 3012.

[0169] In the thickness direction D3, the first projection 37 has a first height H1, and the second projection 38 has a second height H2. The second height H2 may be different from the first height H1. For example, the second height H2 may be smaller than the first height H1. In the angle adjustment step described above, at least the first projection 37 of the first projection 37 and the second projection 38 may be in contact with the second frame surface 602 of the first frame 60.

[0170] The first projection 37 may be located inward in a plan view compared to the second projection 38. In the angle adjustment step described above, a portion of the outer region 35 may be pressed toward the first frame 60 so that the second projection 38 approaches the second frame surface 602 of the first frame 60. In this case, the inclined surface of the first surface 301 of the base material 30 has a backward tilt angle θ1.

[0171] In the angle adjustment process, the outer region 35 may be pressed so that the first projection 37 contacts the second surface 602 of the first frame 60, but the second projection 38 does not contact the second surface 602. In the angle adjustment process, the outer region 35 may be pressed so that both the first projection 37 and the second projection 38 contact the second surface 602 of the frame. When both the first projection 37 and the second projection 38 contact the second surface 602 of the frame, the backward tilt angle θ1 is equal to the maximum backward tilt angle θ10. In the example shown in Figure 30, the maximum backward tilt angle θ10 is the angle that the straight line SL3 makes with respect to the first surface 301 of the outer region 35. The straight line SL1 is a hypothetical straight line tangent to the first projection 37 and the second projection 38.

[0172] In Figure 30, the symbol K3 represents the distance between the first projection 37 and the second projection 38 in the first direction D1. The larger the ratio of the difference between the first height H1 and the second height H2 to the distance K3, the larger the maximum backward tilt angle θ10.

[0173] Figure 31 is a cross-sectional view showing an example of the outer region 35 of the base material 30 and the first frame 60. The outer region 35 may be inclined with respect to the second frame surface 602 such that the gap between the first surface 301 of the outer region 35 and the second frame surface 602 of the first frame 60 narrows as it moves inward. In this case, the inclination angle θ2 is also referred to as the forward inclination angle θ2.

[0174] The forward tilt angle θ2 of the outer region 35 is, for example, 0.01° or more, may be 0.05° or more, may be 0.10° or more, or may be 0.20° or more. The forward tilt angle θ2 of the outer region 35 is, for example, 1.00° or less, may be 0.80° or less, may be 0.60° or less, or may be 0.40° or less.

[0175] In Figure 31, the symbol ΔZ1 represents the distance in the thickness direction D3 between the outer region 35 and the inner region 36 that are facing each other in the first direction D1 within a single first opening 31. The position of the outer region 35 in the thickness direction D3 is determined by the position of the second surface 302 that is in contact with the first wall surface 32. The position of the inner region 36 in the thickness direction D3 is determined by the position of the second surface 302 that is in contact with the first wall surface 32. As shown in Figure 31, if the outer region 35 has a forward tilt angle θ2, the inner region 36 can be positioned below the outer region 35. The distance ΔZ2 is also referred to as the push-down distance ΔZ2.

[0176] The depression distance ΔZ2 of the substrate 30 is, for example, 0.1 μm or more, may be 0.5 μm or more, may be 2.0 μm or more, or may be 10.0 μm or more. The depression distance ΔZ2 of the substrate 30 is, for example, 50.0 μm or less, may be 40.0 μm or less, may be 30.0 μm or less, or may be 20.0 μm or less.

[0177] Depending on the state of the base material 30, it may be advantageous to push the inner region 36 down relative to the outer region 35. The configuration in which the inner region 36 is pushed down relative to the outer region 35 may be adopted when the base material 30 has different problems than the configuration in which the inner region 36 is pushed up relative to the outer region 35. In the example shown in Figure 31, during the angle adjustment process, a portion of the outer region 35 located inside the first projection 37 in a plan view may be pressed.

[0178] In the example shown in Figure 31, during the angle adjustment process, the outer region 35 may be pressed so that the first projection 37 contacts the second frame surface 602 of the first frame 60, but the first surface 301 other than the first projection 37 does not contact the second frame surface 602. During the angle adjustment process, the outer region 35 may be pressed so that both the first projection 37 and a portion of the first surface 301 other than the first projection 37 contact the second frame surface 602.

[0179] Figure 32 is a cross-sectional view showing an example of the outer region 35 of the base material 30. The first projection 37 may be located on the first outer edge 3011 of the first surface 301. In other words, the side surface of the first projection 37 may constitute part of the outer edge 303. The position of the first projection 37 on the first outer edge 3011 increases the distance K2.

[0180] Figure 33 is a cross-sectional view showing an example of the outer region 35 of the base material 30. The first surface 301 of the outer region 35 may include a first projection 37 and a second projection 38. The second height H2 of the second projection 38 may be smaller than the first height H1 of the first projection 37. The first projection 37 may be located further outward than the second projection 38 in a plan view. In the angle adjustment process, a portion of the outer region 35 may be pressed toward the first frame 60 so that the second projection 38 approaches the second frame surface 602 of the first frame 60. In this case, the inclined surface of the first surface 301 of the base material 30 has a forward tilt angle θ2.

[0181] In the angle adjustment process, the outer region 35 may be pressed so that the first projection 37 contacts the second surface 602 of the first frame 60, but the second projection 38 does not contact the second surface 602. In the angle adjustment process, the outer region 35 may be pressed so that both the first projection 37 and the second projection 38 contact the second surface 602 of the frame. When both the first projection 37 and the second projection 38 contact the second surface 602 of the frame, the forward tilt angle θ2 is equal to the maximum forward tilt angle θ20. In the example shown in Figure 33, the maximum forward tilt angle θ20 is the angle that the straight line SL3 makes with respect to the first surface 301 of the outer region 35. The straight line SL3 is a hypothetical straight line tangent to the first projection 37 and the second projection 38.

[0182] Figure 34 is a cross-sectional view showing an example of the outer region 35 of the base material 30. The second height H2 of the second projection 38 may be the same as the first height H1 of the first projection 37. In the angle adjustment process, the angle of the first surface 301 of the base material 30 with respect to the second surface 602 of the frame may be changed by contracting the first projection 37 or the second projection 38 in the thickness direction D3. For example, if the second projection 38 contracts in the thickness direction D3 by pressing a portion of the second surface 302 toward the first frame 60, a backward tilt angle θ1 is created in the outer region 35.

[0183] Figure 35 is a cross-sectional view showing an example of the mask device 15. As shown in Figure 35, the thickness of the inner region 36 may be the same as the thickness of the portion of the outer region 35 on which the first protrusion 37 is formed. As shown in Figure 5 above, the thickness of the inner region 36 may be less than the thickness of the portion of the outer region 35 on which the first protrusion 37 is formed.

[0184] The multiple components disclosed in the above embodiments and variations can be combined as needed. Alternatively, some components may be removed from all the components shown in the above embodiments and variations.

[0185] For example, the curved surface 372 of the first projection 37 of the base material 30, as shown in Figure 27, may be used in other first projections 37.

Claims

[Claim 1] A mask device, masks and, The system comprises a first frame connected to the mask, The aforementioned mask is A substrate comprising a first surface, a second surface located opposite the first surface, and a plurality of first openings penetrating from the first surface to the second surface, The mask layer includes a third surface facing the second surface and a fourth surface located on the opposite side of the third surface, The aforementioned substrate comprises silicon or a silicon compound. The mask layer includes a plurality of second openings that overlap the first opening in a plan view and penetrate from the third surface to the fourth surface. The substrate includes an inner region located between the plurality of first openings in a plan view, and an outer region extending along the outer edge of the substrate and surrounding the plurality of first openings and the inner region in a plan view. The first frame includes a first frame surface and a second frame surface located on the opposite side of the first frame surface and facing the first surface of the substrate. The first surface of the outer region includes a portion that is inclined with respect to the second surface of the frame, A masking device wherein the first frame includes a third opening that overlaps with a plurality of first openings in the substrate in a plan view.

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