Polishing composition for semiconductor processes and method for manufacturing a substrate using the same
The polishing composition with alkali metal ions and balanced metal ion ratios enhances dispersibility and defect control, addressing dispersibility and defect formation challenges in semiconductor CMP processes, achieving efficient and defect-free polishing of silicon oxide and tungsten films.
JP7885303B2Active Publication Date: 2026-07-06YOUNG CHANG CHEMICAL CO LTD
Patent Information
- Application Number
- JP2024191127
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2023-11-02
- Filing Date
- 2024-10-30
- Publication Date
- 2026-07-06
- Estimated Expiration
- 2044-10-30
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Abstract
To provide a polishing composition for semiconductor processes that has excellent dispersibility and can embody a polished surface with a defect count regulated below a certain level when applied to chemical mechanical polishing (CMP) processes.SOLUTION: A polishing composition for semiconductor processes according to an embodiment of the present description contains abrasive particles and a first metal ion, which is an alkali metal ion. The abrasive particles present a surface positive charge. The content of the first metal ion in the polishing composition for semiconductor processes is 15 ppm (weight basis) to 100 ppm (weight basis). Such polishing compositions have excellent dispersion and can provide polished surfaces with defect counts regulated below a certain level.SELECTED DRAWING: None
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Citation Information
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