Laser-based chuck heating device and substrate processing device including the device

Abstract

A laser-based chuck heating device according to an embodiment of the present invention includes a supporting chuck and a chuck temperature control device, wherein the supporting chuck includes: a chuck plate, a supporting substrate; a light-absorbing part including a light-absorbing material for absorbing laser light; and a thermal interface layer disposed between the chuck plate and the light-absorbing part. The chuck temperature control device irradiates the light-absorbing part with laser light so that the light energy of the laser light is absorbed by the light-absorbing material, thereby controlling the temperature of the supporting chuck. The laser light has a wavelength set according to the maximum absorbance of the light-absorbing material.

Description

Technical Field

[0001] The present invention relates to a chuck heating device and a substrate processing device including the device, and more specifically, to a chuck heating device and a substrate processing device that utilize laser heating of the chuck. Prior Technology

[0002] Semiconductor integrated circuits are typically very small and thin silicon wafers, but they are composed of a variety of electronic components. A semiconductor wafer undergoes various manufacturing processes before it is produced, including photolithography, etching, deposition, reflow, and packaging. Temperature control of the substrate is crucial in semiconductor manufacturing, and heating the chucks that support the substrate is a commonly used method.

[0003] Traditional chuck heating methods generally employ two heat transfer methods to control temperature during the chuck heating process. The first method involves embedding fluid flow channels inside the chuck and regulating the chuck temperature by controlling the flow rate and fluid temperature. This method utilizes an external heat exchanger or similar device to control the fluid flow.

[0004] The second method involves controlling the temperature by embedding a heating element that matches the heat source inside. In this case, fluid flow pipes are embedded together, and electricity is applied to the heating element for heating. Cooling control is performed by controlling the fluid flow rate. This achieves a state of thermal equilibrium between heating and cooling, thereby controlling the chuck temperature.

[0005] Previous techniques for controlling chuck temperature have struggled to achieve rapid temperature control, thus typically employing methods that maintain the chuck temperature at an appropriate level. However, this temperature maintenance method has limitations when the temperature needs to be changed according to the process requirements. Summary of the Invention

[0006] [The problem the invention aims to solve]

[0007] The present invention provides a laser-based chuck heating device and a substrate processing device that can effectively heat the chuck using a laser.

[0008] In addition, the present invention provides a laser-based chuck heating device and a substrate processing device that can uniformly heat the chuck using a laser.

[0009] The problems to be solved by the present invention are not limited to those described above, and those skilled in the art can clearly understand other problems not mentioned from the following description.

[0010] [Methods used to solve problems]

[0011] Embodiments of the present invention provide a laser-based chuck heating device, comprising a supporting chuck and a chuck temperature control device. The supporting chuck includes: a chuck plate, a supporting substrate; a light-absorbing portion including a light-absorbing material for absorbing laser light; and a thermal interface layer disposed between the chuck plate and the light-absorbing portion. The chuck temperature control device irradiates the light-absorbing portion with laser light so that the light energy of the laser is absorbed by the light-absorbing material, thereby controlling the temperature of the supporting chuck. The laser has a wavelength set according to the maximum absorbance of the light-absorbing material.

[0012] Embodiments of the present invention can provide a laser-based chuck heating device, wherein the heat transfer medium layer comprises a material with a higher thermal conductivity than the light-absorbing part.

[0013] An embodiment of the present invention can provide a laser-based chuck heating device, wherein the heat transfer medium layer includes a first layer in contact with the chuck plate and a second layer in contact with the light-absorbing part.

[0014] Embodiments of the present invention may provide a laser-based chuck heating device, wherein the first layer and the second layer are bonded to each other by copper-to-copper bonding.

[0015] Embodiments of the present invention may provide a laser-based chuck heating device, wherein the heat transfer medium layer includes a refrigerant pipe in which refrigerant flows.

[0016] Embodiments of the present invention may provide a laser-based chuck heating device, wherein the heat transfer medium layer includes a region having a first thickness and a region having a second thickness less than the first thickness.

[0017] Embodiments of the present invention may provide a laser-based chuck heating device, wherein the light-absorbing part has a textured surface.

[0018] An embodiment of the present invention can provide a laser-based chuck heating device, wherein the supporting chuck further includes an anti-reflective layer disposed below the light-absorbing part.

[0019] An embodiment of the present invention can provide a laser-based chuck heating device, wherein the wavelength of the laser is set in the wavelength range of 700 nm to 1500 nm to correspond to more than 60% of the maximum light absorption rate of the light-absorbing material.

[0020] Embodiments of the present invention may provide a laser-based chuck heating device, which includes a laser-based chuck heating device and a processing unit that performs processing on the substrate in the cavity.

[0021] [Invention Effects]

[0022] According to embodiments of the present invention, a laser-based chuck heating device and a substrate processing device are provided, which can effectively heat the chuck using a laser.

[0023] In addition, according to embodiments of the present invention, a laser-based chuck heating device and a substrate processing device are provided, which can use a laser to uniformly heat the chuck.

[0024] The effects of the present invention are not limited to those described above, and those skilled in the art can clearly understand other effects not mentioned from the following description. Simple Explanation of the Diagram

[0025] Figure 1 is a schematic diagram illustrating a laser-based chuck heating device according to an embodiment of the present invention.

[0026] Figure 2 is a schematic plan view of a laser-based chuck heating device according to an embodiment of the present invention.

[0027] Figure 3 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention.

[0028] Figure 4 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention.

[0029] Figure 5 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention.

[0030] Figure 6 is a structural diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0031] Figure 7 is a schematic diagram illustrating a laser-based chuck heating device according to an embodiment of the present invention.

[0032] Figure 8 is a schematic diagram illustrating a laser-based chuck heating device according to an embodiment of the present invention.

[0033] Figure 9 is a flowchart of a laser-based chuck heating method according to an embodiment of the present invention.

[0034] Figure 10 is a flowchart specifically illustrating step S20 of Figure 9.

[0035] Figure 11 is a graph showing the variation of the optical properties (absorption, reflection, and transmission spectra) of Si material with wavelength. Implementation

[0036] The exemplary embodiments of the present invention will now be described in detail with reference to the figures. However, the present invention is not limited to or restricted by the exemplary embodiments. Unless otherwise defined, all terms (including technical and scientific terms) used in this specification are to be understood in the sense that they can be commonly understood by one of ordinary skill in the art, and may be changed according to the intent or precedent of one of ordinary skill, the emergence of new technologies, etc.

[0037] Furthermore, commonly used terms defined in dictionaries should not be idealized or over-interpreted without explicit specific definitions. In some cases, terms arbitrarily chosen by the applicant may exist; in such cases, their meanings will be detailed in the corresponding description. Therefore, the terminology used in the various embodiments of this disclosure should be defined based on the meaning of the terms and the descriptions provided herein.

[0038] When a part of the entire specification "includes" a certain element, unless specifically stated to the contrary, this does not mean that other elements are excluded, but may be included. In this specification, unless otherwise specified, singular forms also include plural forms. Furthermore, the expression "at least one of a, b, and / or c" as used throughout this specification includes "a single a," "a single b," "a single c," "a and b," "a and c," "b and c," or "all of a, b, and c."

[0039] Furthermore, the terms "first and / or second" used in this specification are for describing various constituent elements, but are only used to distinguish a constituent element from other constituent elements, and are not intended to limit the constituent element referred to by the corresponding term. For example, without departing from the scope of the invention, a first constituent element may be named a second constituent element, and a second constituent element may be named a first constituent element.

[0040] Furthermore, the terms "...section" and "...module" described in this specification refer to a unit for processing at least one function and operation, and can be implemented by hardware components or software components and combinations thereof. Additionally, embodiments of the present invention can be represented by a functional block structure and various processing steps. Such functional blocks can be implemented as various numbers of hardware and / or software components performing specific functions. For example, embodiments of the present invention can be constructed using direct circuits such as storage, processing, logic, lookup tables, etc., capable of performing various functions by relying on the control of one or more microprocessors or other control devices.

[0041] Hereinafter, various embodiments of the present invention will be described in detail with reference to the drawings. In describing the embodiments, descriptions of technical content well-known in the technical field to which this invention pertains and not directly related to this invention will be omitted. This is to ensure that the spirit of the invention is conveyed clearly and without confusion by omitting unnecessary descriptions. For the same reason, some constituent elements in the drawings are exaggerated, omitted, or shown in a simplified manner. Furthermore, the size of each constituent element does not fully reflect its actual size. Throughout this specification, the same reference numerals may refer to the same or corresponding constituent elements.

[0042] Figure 1 is a schematic diagram illustrating a laser-based chuck heating device according to an embodiment of the present invention.

[0043] Figure 2 is a schematic plan view of a laser-based chuck heating device according to an embodiment of the present invention.

[0044] Referring to Figures 1 and 2, a laser-based chuck heating device 100 according to an embodiment of the present invention may include: a supporting chuck 50, a supporting substrate S; and a chuck temperature control device 60, which irradiates the supporting chuck 50 with laser L and controls the temperature of the supporting chuck 50 and the substrate S.

[0045] The support chuck 50 may include: a chuck plate 10, a light-absorbing part 30, and a heat transfer medium layer (thermal interface layer) 20. The support chuck 50 may also include an anti-reflective layer 40.

[0046] The chuck plate 10 is configured to support the substrate S, which is the processing target of the substrate processing apparatus. The laser-based chuck heating device 100 can be an apparatus for performing processes such as, but is not limited to, plasma processes, packaging processes, reflow processes, etching processes, deposition processes, photolithography processes, or thermal processing processes. The substrate S can be, for example, a semiconductor wafer, a mask, a glass substrate, or a liquid crystal display (LCD) panel, but is not limited to these.

[0047] A heat transfer medium layer 20 is disposed between the chuck plate 10 and the light-absorbing part 30, allowing heat to be transferred from the light-absorbing part 30 to the chuck plate 10. The heat transfer medium layer 20 may include a material with a thermal conductivity higher than that of the light-absorbing part 30. The heat transfer medium layer 20 may also include a metallic material, such as at least one of copper (Cu), silver (Ag), aluminum (Al), zinc (Zn), and nickel (Ni). The heat transfer medium layer 20 also serves to bond the chuck plate 10 and the light-absorbing part 30 together. Furthermore, the heat transfer medium layer 20 may include a material with high laser reflectivity, further improving the light absorption rate to the light-absorbing part 30.

[0048] The heat transfer medium layer 20 may include a first layer 22 in contact with the chuck plate 10 and a second layer 24 in contact with the light-absorbing portion 30. The first layer 22 may be disposed on, for example, the side (lower surface) opposite to the surface (upper surface) on which the substrate S is disposed on the chuck plate 10. The second layer 24 may be disposed on the surface (upper surface) of the light-absorbing portion 30 opposite to the chuck plate 10. The first layer 22 and the second layer 24 may be formed, for example, by metal plating. In this case, the first layer 22 and the second layer 24 may be formed on the chuck plate 10 and the light-absorbing portion 30 respectively based on different seed layers. The first layer 22 and the second layer 24 may be bonded to each other by, for example, hybrid bonding such as copper-copper bonding. In addition, while the metal paste is applied to the chuck plate 10 and the light-absorbing portion 30 respectively, the heat transfer medium layer 20 may also be formed by heat curing after bonding them together.

[0049] The heat transfer medium layer 20 is ideally composed of copper (Cu) for the following reasons: Copper has high thermal conductivity, enabling rapid heat transfer in high-temperature light-absorbing materials. Furthermore, copper is easy to process and can be easily plated onto the chuck plate 10 and the light-absorbing portion 30 separately. Additionally, the diffusion properties of copper facilitate the bonding of the layers (22, 24). Moreover, copper has the property of reflecting incident near-infrared laser light. To ensure the absorption distance of the incident laser according to Beer-Lambert's law, the light-absorbing portion 30 needs to reach a predetermined thickness; however, by utilizing the reflective properties of copper, the thickness of the light-absorbing portion 30 can be reduced. Considering the difference in thermal expansion coefficients between silicon and copper (both light-absorbing materials) at high temperatures, the warpage problem can be solved. That is, the thinner the silicon layer, the better it can prevent soft warpage and minimize the risk of substrate breakage.

[0050] The light-absorbing portion 30 may include a light-absorbing material that absorbs the laser L irradiated by the chuck temperature control device 60. One or more light-absorbing portions 30 may be provided. The light-absorbing portion 30 may be attached to the chuck plate 10 via a heat transfer medium layer 20. In another embodiment, the light-absorbing portion 30 may also be embedded inside the chuck plate 10 (see Figure 8). The light-absorbing portion 30 may be made of semiconductor materials such as silicon (Si), germanium (Ge), or silicon-germanium (SiGe), but is not limited thereto.

[0051] As shown in Figures 1 and 2, the light-absorbing portion 30 can be configured as concentric circles with reference to the center of the chuck plate 10. For example, the light-absorbing portion 30 may include an inner light-absorbing portion 30A in a first region (inner region) and an outer light-absorbing portion 30B in a second region (outer region). Compared to the first region, the second region may be closer to the edge of the chuck plate 10. Multiple inner light-absorbing portions 30A and outer light-absorbing portions 30B can be configured. Although six inner light-absorbing portions 30A and twelve outer light-absorbing portions 30B are shown in the figures, this is only an example, and the number of light-absorbing portions 30 can be varied according to different embodiments. In addition, the configuration of the light-absorbing portions (30A, 30B) can also be varied according to different embodiments.

[0052] In addition, the light-absorbing part 30 may have a disk shape, but its shape may vary depending on the embodiment. For example, the light-absorbing part 30 may have a shape such as a cuboid, cylinder, or cone, or it may have a cylindrical shape with a concave or convex lower surface.

[0053] In embodiments of the present invention, different amounts of power can be supplied to the inner light-absorbing portion 30A and the outer light-absorbing portion 30B. For example, the first light-emitting device 65A facing the inner light-absorbing portion 30A can receive less power than the second light-emitting device 65B facing the outer light-absorbing portion 30B. Conversely, the first light-emitting device 65A can receive more power than the second light-emitting device 65B. By adjusting the light energy of the laser irradiating the inner and outer regions of the chuck plate 10, the temperature of the chuck plate 10 can be effectively controlled. Furthermore, the light energy of the laser irradiating the light-absorbing portion 30 attached to the chuck plate 10 can be controlled independently by the chuck temperature control device 60.

[0054] An anti-reflective layer 40 can be disposed below the light-absorbing part 30. The anti-reflective layer 40 can prevent laser light irradiated onto the light-absorbing part 30 from being reflected, interfered with, or scattered on its surface. Therefore, the light transmittance of the light-absorbing part 30 can be improved.

[0055] The chuck temperature control device 60 can irradiate the light-absorbing section 30 with a laser having a wavelength set according to the maximum light absorption rate of the light-absorbing material in the light-absorbing section 30. The chuck temperature control device 60 can control the temperature of the chuck plate 10 by supplying the light energy of the laser to the light-absorbing material of the light-absorbing section 30.

[0056] The chuck temperature control device 60 may include a light source control device (62A, 62B) and a light source device (65A, 65B). When it is necessary to heat the supporting chuck 50, the light source control device (62A, 62B) can supply power to the light source device (65A, 65B). Thus, the light source device (65A, 65B) can irradiate the supporting chuck 50 with laser L. The first light source control device 62A can supply power to the first light source device 65A, which can irradiate the inner light-absorbing part 30A with laser L. The second light source control device 62B can supply power to the second light source device 65B, which can irradiate the outer light-absorbing part 30B with laser L. Multiple light source devices (65A, 65B) may be configured, each capable of irradiating laser with its corresponding light-absorbing part 30.

[0057] Figure 3 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention. Figure 3 shows an enlarged view of the area corresponding to region "A" in Figure 1.

[0058] Referring to Figure 3, the chuck plate 10 of the laser-based chuck heating device 100A may include portions (10a, 10b) with varying thicknesses depending on the region, and the heat transfer medium layer 20 may include portions with varying thicknesses depending on the region.

[0059] When heat is transferred from the light-absorbing section 30 to the chuck plate 10, the temperature of the central region and the edge regions will be heated at different temperatures. This is due to the different degrees of surface exposure of the chuck plate 10 depending on the region. For example, the temperature in the central region will rise relatively higher compared to the edge regions.

[0060] According to an embodiment of the present invention, in order to improve the heat transfer efficiency of the edge region, the thickness T1 of the heat transfer medium layer 20 in the edge region can be designed to be thicker than the thickness T2 of the heat transfer medium layer 20 in the central region. Furthermore, in the chuck plate 10, the thickness of the central region can be designed to be thicker than the thickness of the edge region. Therefore, temperature uniformity from the light-absorbing portion 30 to the chuck plate 10 can be controlled, and the temperature gradient of the chuck plate 10 can be controlled.

[0061] According to an embodiment of the present invention, the lower surface of the chuck plate 10 may be provided with a protrusion 10a and a recess 10b to control the thickness. The protrusion 10a and the recess 10b may be alternately arranged, and their height or width may vary depending on the embodiment. Correspondingly, the upper surface of the heat transfer medium layer 20 may be provided with a protrusion 20a and a recess 20b. The protrusion 20a of the heat transfer medium layer 20 may contact the recess 10b of the chuck plate 10, and the recess 20b of the heat transfer medium layer 20 may contact the protrusion 10a of the chuck plate 10.

[0062] In addition, the temperature gradient on the surface of the chuck plate 10 can be controlled by controlling the size or temperature of the light-absorbing part 30, which serves as a heat source, so as to control the chuck plate 10 to have different temperature gradients in different areas.

[0063] However, Figure 3 is only an example of the present invention and is not limited thereto. The configuration of different thicknesses of the chuck plate 10 or the heat transfer medium layer 20 can be varied. For example, the chuck plate 10 can also be configured such that the thickness gradually decreases or increases from the central region of the irradiated laser to the peripheral region of the central region.

[0064] Figure 4 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention. Figure 4 shows an enlarged view of the area corresponding to region "A" in Figure 1.

[0065] Referring to FIG4, in the laser-based chuck heating device 100B according to an embodiment of the present invention, a cooling conduit 28 for refrigerant flow can be provided within the heat transfer medium layer 20. At least a portion of the cooling conduit 28 can be embedded in the protrusion 20a of the heat transfer medium layer 20. The refrigerant flowing into the cooling conduit 28 can absorb heat from the chuck plate 10, thereby lowering the temperature of the chuck plate 10. The refrigerant can be injected into the cooling conduit 28 in liquid or gas form.

[0066] During the substrate processing, it is sometimes necessary to perform fine temperature adjustment or cooling on the chuck plate 10 or the substrate S. According to an embodiment of the present invention, by forming a coolant path inside the heat transfer medium layer 20 with relatively high thermal conductivity, cooling of the support chuck 50 can be effectively performed. In addition, the temperature of the support chuck 50 can be quickly controlled.

[0067] Furthermore, according to an embodiment of the present invention, a predetermined zone is marked on the chuck plate 10, and the refrigerant control unit controls the flow rate of the refrigerant according to each zone, thereby enabling fine temperature adjustment according to the zone.

[0068] Furthermore, the structure with embedded cooling pipes 28 can also be applied to other embodiments of the present invention. For example, cooling pipes 28 can also be provided on the heat transfer medium layer 20 of the laser-based chuck heating device of Figures 1, 7, or 8.

[0069] Figure 5 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention. Figure 5 shows an enlarged view of the area corresponding to region "B" in Figure 1.

[0070] Referring to FIG5, the light-absorbing portion 30 of the laser-based chuck heating device 100C according to an embodiment of the present invention may have textured surfaces (30c1, 30c2). The upper surface 30c1 of the light-absorbing portion 30, which contacts the heat transfer medium layer 20, may have unevenness. The lower surface 30c2 of the light-absorbing portion 30, which contacts the anti-reflective layer 40, may have unevenness. The unevenness can improve the light absorption rate of the light-absorbing portion 30. Corresponding to the upper surface 30c1, the surface of the second layer 24 of the heat transfer medium layer 20 may also have unevenness. Corresponding to the lower surface 30c2, the surface of the anti-reflective layer 40 may also have unevenness.

[0071] The textured surface structure of the light-absorbing portion 30 can also be applied to other embodiments of the present invention. For example, the light-absorbing portion 30 of the laser-based chuck heating device in Figures 3 and 4 can also be provided with a textured surface structure.

[0072] Figure 6 is a structural diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0073] Referring to FIG6, the laser-based chuck heating device 100 according to an embodiment of the present invention may include a laser control unit 2, a laser wavelength determination unit 3, a laser output direction adjustment unit 4, a chuck temperature control unit 5, a light absorption control unit 6, and a refrigerant control unit 7.

[0074] As the program (algorithm) stored in memory is executed, the laser control unit 2, laser wavelength determination unit 3, laser output direction adjustment unit 4, chuck temperature control unit 5, light absorption control unit 6, and refrigerant control unit 7 can perform temperature control processing for supporting the chuck by means of the control unit 1, which includes at least one processor.

[0075] The laser control unit 2 can control the wavelength and intensity of the laser irradiated from the laser-based chuck heating device according to the process scheme of the processing unit. Based on the laser irradiation direction, the thickness of the light-absorbing part 30 can be designed to have the maximum light absorption rate according to the light absorption characteristics of the light-absorbing material.

[0076] The laser wavelength determination unit 3 can generate an absorption spectrum representing the absorbance based on the laser wavelength of the light-absorbing material. The laser wavelength determination unit 3 can determine the laser wavelength based on the peak wavelength of the absorbance, which represents the maximum absorbance in the absorption spectrum.

[0077] The laser output direction adjustment unit 4 can adjust the direction of the laser so that it irradiates the area in the support chuck 50 that requires temperature control using the laser, according to the temperature distribution of the support chuck 50. The laser output direction adjustment unit 4 may include a device for adjusting the direction of the laser generating device of the chuck temperature control unit 5, such as a drive cylinder or a drive motor.

[0078] The chuck temperature control unit 5 can control the chuck temperature control device (see "60" in Figure 1). The chuck temperature control unit 5 can control the output of the laser irradiating each light-absorbing section 30 according to the configuration of the light-absorbing sections 30. For example, the chuck temperature control unit 5 can supply a first power to the light-absorbing sections in a predetermined area, and can supply a second power different from the first power to the light-absorbing sections in other predetermined areas. Furthermore, the chuck temperature control unit 5 may include a wavelength-variable laser (variable frequency laser). The wavelength-variable laser can adjust the wavelength of the laser and output it according to the target temperature for the supporting chuck 50.

[0079] The light absorption control unit 6 adjusts the distance between the support chuck 50 and the laser generating device of the chuck temperature control unit 5 according to the target temperature of the support chuck 50 and the area of ​​the region in the support chuck 50 that requires temperature change, thereby controlling the laser light energy absorbed by the light absorption unit 30 and the area of ​​the light absorption region.

[0080] When it is necessary to lower the target temperature of the support chuck 50 and the temperature within the support chuck 50, the refrigerant control unit 7 can supply refrigerant to the refrigerant pipes (see "28" in Figure 4) installed in the support chuck 50. Furthermore, the refrigerant control unit 7 can control the flow rate, type, and timing of refrigerant inflow and outflow to each zone of the support chuck 50.

[0081] The substrate processing apparatus according to an embodiment of the present invention may include the laser-based chuck heating device 100 described above and a processing unit that performs processing on the substrate S within a cavity (not shown). The cavity has a processing space for processing the substrate S. Depending on the type of substrate processing process performed by the substrate processing apparatus, various components required for processing the substrate S may be provided inside the cavity.

[0082] For example, when the substrate processing apparatus is an apparatus that uses plasma to process a substrate, the following components may be provided: a structure for providing process gas for generating plasma into the processing space of the cavity, a structure for converting process gas into plasma (e.g., a high-frequency generator), and a component for discharging process gas and plasma from inside the processing space.

[0083] The support chuck 50 corresponds to the support portion provided for supporting the substrate S. For example, it can be provided as an electrostatic chuck on the bottom surface (lower surface) of the substrate S, but is not limited to this. A guide ring (or edge ring) for guiding the substrate S can be provided around the support chuck 50. The support chuck 50 can be insulated by an insulator.

[0084] An exhaust ring for uniformly discharging process gases may be provided within the cavity. The processing unit is a configuration for performing the aforementioned substrate processing process on the substrate S, and may include, for example, a high-frequency generator for generating and controlling plasma, a high-frequency controller, and a heater for heating the substrate S.

[0085] Figure 7 is a schematic diagram illustrating a laser-based chuck heating device according to an embodiment of the present invention.

[0086] Referring to FIG7, in the laser-based chuck heating device 100D according to an embodiment of the present invention, a light-absorbing portion 30 may be disposed below the chuck plate 10. The light-absorbing portion 30 may have the same width as or a similar width to the chuck plate 10. The light-absorbing portion 30 can transfer heat to the chuck plate 10 by means of a wider area, and the heat transfer medium layer 20 disposed between the light-absorbing portion 30 and the chuck plate 10 can effectively and uniformly transfer heat.

[0087] Figure 8 is a schematic diagram illustrating a laser-based chuck heating device according to an embodiment of the present invention.

[0088] Referring to Figure 8, in the laser-based chuck heating device 100E according to an embodiment of the present invention, the light-absorbing part 30 and the heat transfer medium layer 20 can be embedded within the chuck plate 10. In this case, the heat transfer medium layer 20 can at least surround the upper surface and side surfaces of the light-absorbing part 30. The heat transfer medium layer 20 can increase the contact area between the chuck plate 10 and the light-absorbing part 30, thereby enabling effective and uniform heat transfer. Although not shown, it is also possible to provide an anti-reflective layer below the light-absorbing part 30.

[0089] Figure 9 is a flowchart of a laser-based chuck heating method according to an embodiment of the present invention. Referring to Figures 1 to 9, the laser-based chuck heating method according to an embodiment of the present invention includes: a step of preparing a support chuck 50 (step S10), the support chuck 50 having a light-absorbing portion 30 including a light-absorbing material for absorbing laser light; and a step of controlling the temperature of the support chuck 50 by irradiating the light-absorbing portion 30 with a laser having a wavelength set according to the maximum light absorption rate of the light-absorbing material using a chuck temperature control device 60, so that the light energy of the laser light is absorbed by the light-absorbing material.

[0090] Figure 10 is a flowchart specifically illustrating step S20 of Figure 9. Referring to Figures 9 and 10, the laser-based chuck heating method according to an embodiment of the present invention may include: a step of generating an absorption spectrum representing the absorbance of the light-absorbing material according to the laser wavelength by means of a laser wavelength determination unit (step S22); and a step of determining the wavelength of the laser based on the peak wavelength of the absorbance representing the maximum absorbance in the absorption spectrum (step S24).

[0091] As described above, the laser-based chuck heating device and method according to embodiments of the present invention generate heat by having the light energy of a laser absorbed by a light-absorbing material of the chuck. A wavelength of light easily absorbed by the light-absorbing material and a light-absorbing material that can improve the absorption rate can be selected. Therefore, the light energy incident on the support chuck can be effectively absorbed as a heat source. The temperature of the support chuck can be controlled by the absorbed laser heat source, and temperature control of the substrate (wafer) can be performed by controlling the temperature of the support chuck.

[0092] According to embodiments of the present invention, the heating and cooling of the support chuck can be rapidly adjusted by laser, thereby easily controlling the temperature of the chuck. The laser-based chuck heating device and method according to embodiments of the present invention can heat and cool the material by irradiating the target material with laser light energy, utilizing the material's light-absorbing properties.

[0093] Figure 11 shows the variation of the optical properties (absorption, reflection, and transmission spectra) of Si material with wavelength. In Figure 11, the solid lines represent the absorption spectrum of Si material, the long-spaced dashed lines represent the reflection spectrum of Si material, and the short-spaced dashed lines represent the transmission spectrum of Si material.

[0094] By using laser-regulated light-absorbing materials as components of the chuck support, the temperature of the chuck support can be effectively controlled. Temperature regulation of the chuck can be effectively performed based on the laser wavelength and intensity, as well as the light-absorbing material and its thickness. Silicon has the highest absorptivity at a wavelength of 980 nm.

[0095] From the optical properties of Si, when irradiated with wavelengths in the 200-2000 nm range, laser light propagates through absorption, reflection, and transmission. The energy from the dual absorption is absorbed as heat, causing the temperature of Si to rise. The highest absorptivity of Si was confirmed in the 980 nm wavelength range. Si exhibits an absorptivity exceeding 60% in the 700-1000 nm region, enabling effective light absorption and heat conversion at these wavelengths.

[0096] Considering that the absorption decreases exponentially with the thickness of the light-absorbing material, the appropriate absorption thickness can be calculated based on the absorption characteristics of the light-absorbing material. A wavelength of 980 nm is considered the optimal wavelength for absorption by Si materials, and the laser wavelength can be calculated within the range of 700 nm to 1500 nm.

[0097] Light-absorbing materials can be not only silicon (Si), but also dielectrics, metals, crystals, etc. The degree of light absorption depends on the wavelength of the incident laser, the amount of absorption by the absorbing material, and the intensity of the laser source. Depending on the intensity of the laser source, the temperature can rise by more than 100°C per second.

[0098] For example, when choosing a Si material for the chuck heating structure, it can be fabricated as follows: an upper layer of dielectric or metallic material for placing the wafer, a lower layer for heating the material by laser irradiation, and an intermediate layer of metallic material bonded to both sides and transferring heat. In this case, the materials and structure of the upper, intermediate, and lower layers effectively convert the laser light source into heat and transfer it to the wafer. Depending on the requirements, the upper and intermediate layers can be fabricated from the same material.

[0099] When a 300mm wafer is placed on the chuck, multiple light sources can be integrated to illuminate the lower part of the chuck, allowing for adjustment of the laser source size and intensity. The light-absorbing material can be divided into one to seven or more sections, and its size can be selected for attachment to the lower end of the chuck. The example in Figure 2 above shows an example with eighteen light-absorbing sections attached. In the illustrated example, multiple light sources are provided, and the laser from each light source illuminates each light-absorbing section.

[0100] By utilizing the light absorption properties of the material, it is also possible to directly heat the Si wafer inside the cavity. It can also be applied to directly absorb light from a laser source located above the chuck within the cavity. However, direct absorption on the substrate involves irradiating the laser inside the process cavity, thus requiring separation of the light source (via a window glass) from the cavity, and the need for devices to prevent the absorption of device patterns on the Si wafer and to prevent damage to the patterns caused by the laser.

[0101] The purpose of temperature control using a laser chuck is primarily twofold. First, by guiding rapid temperature regulation, it is possible to selectively deposit or remove the substrate film on the chuck. Second, during standby periods in processes where chuck heating is used to remove the film, unnecessary heating is stopped, thereby saving energy.

[0102] In semiconductor manufacturing, cleaning or atomic layer etching / deposition processes require in-situ temperature control. Traditionally, to create a high-temperature environment, additional temperature risers or cavities with additional high-temperature chucks were fabricated within the chamber. These additional temperature risers attempted to control the temperature of the thin film on the wafer by adjusting the nozzle position or placing additional lamps inside the chamber. Laser-based chuck temperature control irradiates the laser from below the chuck outside the chamber, rather than from inside the chamber where various chemical reactions occur. Furthermore, the ability to adjust the temperature rise and fall by regulating the laser's optical intensity enables fine-grained process control.

[0103] Semiconductor equipment consumes a large amount of power. Along with radio frequency (RF), vacuum pumps, air conditioning, and control system lights, chuck heating also requires significant power. However, when using RF, the equipment does not need to generate plasma in standby mode, greatly reducing standby power consumption. Conversely, in traditional chuck heating methods, temperature control is achieved through heat exchangers or heating elements, but a constant power consumption is essential for stability. This is because the heat exchange rate of the heat source is very low, and it takes several minutes to tens of minutes to adjust from room temperature to the controlled temperature. When using lasers, there is no standby power, and the required process temperature can be quickly controlled during process switching, significantly reducing the equipment's power consumption.

[0104] The above detailed description is an example of the present invention. Furthermore, the above content describes preferred embodiments of the present invention, which can be used in various combinations, modifications, and environments. That is, changes or modifications can be made to the concept and scope of the invention disclosed in this specification, to the equivalent scope of the written disclosure, and / or to the scope of technology or knowledge in the art. The written embodiments illustrate the optimal state for implementing the technical idea of ​​the present invention, and various required modifications can be made to the specific application field and use of the invention. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Furthermore, the appended claims should be interpreted as including other embodiments.

[0105] 1: Control Department 2: Laser Control Unit 3: Laser Wavelength Determination Unit 4: Laser output direction adjustment unit 5: Chuck Temperature Control Unit 6: Light Absorption Control Unit 7: Refrigerant Control Department 10: Chuck plate 10a: Protrusion 10b: Recessed portion 20: Heat transfer medium layer 20a: Protruding part 20b: Recessed portion 22: First Floor 24: Second layer 28: Cooling pipes 30:Light absorption part 30A: Inner light-absorbing section 30B: Outer light-absorbing part 30c1: Upper surface 30c2: Lower surface 40: Anti-reflective layer 50: Support chuck 60: Chuck temperature control device 62A: First Light Source Control Device 62B: Second Light Source Control Device 65A: First Light Source Device 65B: Second light source device 100, 100A, 100B, 100C, 100D, 100E: Laser-based chuck heating devices Areas A and B L: Laser S:Substrate T1, T2: Thickness S10, S20, S22, S24: Steps

Claims

1. A laser-based chuck heating device, comprising: A support chuck includes a chuck plate supporting a substrate, a light-absorbing portion including a light-absorbing material for absorbing laser light, and a heat transfer medium layer disposed between the chuck plate and the light-absorbing portion; and a chuck temperature control device that irradiates the light-absorbing portion with the laser light so that the light energy of the laser light is absorbed by the light-absorbing material, thereby controlling the temperature of the support chuck, wherein the laser light has a wavelength set according to the maximum absorbance of the light-absorbing material, and the heat transfer medium layer includes a first layer in contact with the chuck plate and a second layer in contact with the light-absorbing portion.

2. The laser-based chuck heating device as described in claim 1, wherein, The heat transfer medium layer comprises a material with a higher thermal conductivity than the light-absorbing part.

3. The laser-based chuck heating device as described in claim 1, wherein, The first layer and the second layer are bonded to each other by copper-copper bonding.

4. The laser-based chuck heating device as described in claim 1, wherein, The heat transfer medium layer includes refrigerant pipes through which refrigerant flows.

5. The laser-based chuck heating device as described in claim 1, wherein, The heat transfer medium layer includes a region having a first thickness and a region having a second thickness less than the first thickness.

6. The laser-based chuck heating device as described in claim 1, wherein, The light-absorbing part has a textured surface.

7. The laser-based chuck heating device as described in claim 1, wherein, The support chuck also includes an anti-reflective layer disposed below the light-absorbing part.

8. The laser-based chuck heating device as described in claim 1, wherein, The wavelength of the laser is set to correspond to more than 60% of the maximum absorbance of the light-absorbing material within the wavelength range of 700nm to 1500nm.

9. A substrate processing apparatus, comprising: The laser-based chuck heating device and the processing unit that performs processing on the substrate inside the cavity, as described in any one of claims 1 to 8.

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