Solar cell and manufacturing method therefor, conductive device and laser-assisted sintering apparatus

Abstract

The present application relates to a solar cell and a manufacturing method therefor, a conductive device, and a laser-assisted sintering apparatus. The manufacturing method for a solar cell comprises: forming a grid line pattern on a cell body, wherein the grid line pattern comprises N fingers arranged in parallel and spaced apart, and N is an integer greater than or equal to 2; applying a bias voltage to the N fingers, wherein the bias voltage on each finger is positively correlated with its conductive resistance; and performing a laser-assisted sintering process on the N fingers.

Description

Solar cells and their fabrication methods, conductive devices and laser-assisted sintering equipment

[0001] Related applications

[0002] This application claims priority to Chinese patent application filed on December 5, 2024, application number 202411774636.1, entitled "Solar Cell and Method for Preparing the Same, Conductive Device and Laser-Assisted Sintering Equipment", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of photovoltaic technology, and in particular to solar cells and their preparation methods, conductive devices, and laser-assisted sintering equipment. Background Technology

[0004] The contact resistance between the surface electrode and the back electrode of a solar cell has a significant impact on the cell's conversion efficiency; the lower the metal-semiconductor contact resistance, the higher the conversion efficiency. Currently, the main method to reduce metal-semiconductor contact resistance is Laser Enhanced Contact Optimization (LECO), also known as laser-assisted sintering. This process involves irradiating the photovoltaic cell with a high-intensity laser to excite charge carriers and applying a deflection voltage to separate these carriers, creating a localized current that initiates sintering, thereby reducing the contact resistance between the metal and the semiconductor. Summary of the Invention

[0005] In a first aspect, embodiments of this application provide a method for preparing a solar cell, comprising:

[0006] A grid pattern is formed on the battery body, the grid pattern comprising N parallel and spaced sub-grid lines, where N is an integer greater than or equal to 2;

[0007] A bias voltage is applied to N sub-gate lines, wherein the bias voltage on each sub-gate line is positively correlated with its conductivity resistance;

[0008] Laser-assisted sintering is performed on the N sub-gate lines.

[0009] The solar cell fabrication method provided in this application involves applying a bias voltage to N sub-grid lines, ensuring that the bias voltage on each sub-grid line is positively correlated with its conductivity resistance, and then performing laser-assisted sintering on the N sub-grid lines. In other words, a corresponding bias voltage is applied to each sub-grid line based on its conductivity resistance, causing the local current flowing through each sub-grid line to generate corresponding Joule heat, reducing over-burning or under-burning, thereby facilitating the sintering of the sub-grid lines. This allows all N sub-grid lines to form good contact with the semiconductor layer of the cell body, improving the conversion efficiency of the solar cell.

[0010] In some embodiments, the step of applying bias voltages to the N sub-gate lines includes:

[0011] The N sub-grid lines are divided into M grid line groups along the first direction, where M is an integer greater than or equal to 2. The first direction is perpendicular to the thickness direction of the battery body and perpendicular to the extension direction of the sub-grid lines.

[0012] A bias voltage is applied to M gate line groups, and the bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group.

[0013] The average conductivity resistance of the grid line group is the average conductivity resistance of all sub-grid lines in the grid line group.

[0014] In some embodiments, applying a bias voltage to the M gate line groups, wherein the bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group, includes:

[0015] The bias voltage on each gate line group is negatively correlated with the average linewidth of that gate line group.

[0016] In some embodiments, M is 2-100, optionally 5-30, and further optionally 8-20.

[0017] In some embodiments, the number of sub-gate lines in each gate line group is 1-100, optionally 5-50, and further optionally 10-40.

[0018] In some embodiments, the step of applying a bias voltage to the N sub-gate lines includes:

[0019] The N sub-grid lines are equally divided into M grid line groups along a first direction. The conductivity of all sub-grid lines in each grid line group falls within the same first preset range. The difference in average conductivity of two adjacent grid line groups falls within the same second preset range. The average conductivity of a grid line group is the average conductivity of all sub-grid lines in the grid line group. The first direction is perpendicular to the thickness direction of the battery body and is also perpendicular to the extension direction of the sub-grid lines.

[0020] A bias voltage is applied to M gate line groups, and the bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group.

[0021] In some embodiments, the step of applying a bias voltage to the N sub-gate lines includes:

[0022] The N sub-gate lines are equally divided into M gate line groups along a first direction. The linewidth of all the sub-gate lines in each gate line group falls within the same third preset range. The difference in the average linewidth of two adjacent gate line groups falls within the same fourth preset range. The average linewidth of the gate line group is the average of the linewidths of all the sub-gate lines in the gate line group. The first direction is perpendicular to the thickness direction of the battery body and perpendicular to the extension direction of the sub-gate lines.

[0023] A bias voltage is applied to M gate line groups, and the bias voltage on each gate line group is negatively correlated with the average linewidth of the gate line group.

[0024] In some embodiments, the step of performing laser-assisted sintering on the N sub-gate lines includes:

[0025] The N sub-gate lines are irradiated with a laser to sinter them.

[0026] In some embodiments, the power of the laser is between 9W and 15W.

[0027] Secondly, embodiments of this application provide a solar cell prepared by the preparation method described in any of the above embodiments. This improves the conversion efficiency of the solar cell.

[0028] Thirdly, embodiments of this application provide a conductive device applied to a solar cell, comprising:

[0029] Installation components;

[0030] The probe assembly includes a plurality of probes arranged at intervals along a first preset direction and passing through the mounting member, the probes being used for electrical connection with the sub-grid lines of the solar cell;

[0031] Multiple conductive modules are spaced apart on the mounting component; each conductive module is connected to a corresponding probe, and the conductive module is used to control the bias voltage applied to the corresponding probe.

[0032] The conductive device provided in this application embodiment includes a mounting component, a probe assembly, and multiple conductive modules. The probe assembly comprises multiple probes spaced apart along a first preset direction and passing through the mounting component. The multiple conductive modules are connected one-to-one with the multiple probes. In this way, during laser-assisted sintering of the solar cell, the first preset direction can be perpendicular to the thickness direction of the solar cell and perpendicular to the extension direction of the sub-grid lines. That is, the first preset direction is parallel to or coincides with the first direction. This facilitates the electrical connection between the multiple probes and the multiple sub-grid lines of the solar cell. Based on the conductivity resistance of the sub-grid lines, the bias voltage applied to the corresponding probe is controlled by the conductive modules. This makes the bias voltage on each sub-grid line positively correlated with its conductivity resistance, causing the local current flowing through each sub-grid line to generate corresponding Joule heat, reducing over-burning or under-burning, thus facilitating the sintering of the sub-grid lines. Consequently, multiple sub-grid lines on the solar cell can form good contact with the semiconductor layer of the solar cell, thereby improving the conversion efficiency of the solar cell.

[0033] In some embodiments, the conductive module includes a conductive element and a voltage control module. The conductive element is connected to the corresponding probe. The voltage control module is electrically connected to the conductive element and is used to control the bias voltage applied to the corresponding probe.

[0034] In some embodiments, the conductive element includes a conductive block disposed within the mounting element, the conductive block having a mounting hole thereon, and the probe passing through the mounting hole;

[0035] The voltage control module includes a voltage controller, which is mounted on the mounting component and connected to the conductive block.

[0036] In some embodiments, the probe includes a conductive connector and an abutment, the conductive connector being disposed on the mounting member, and the abutment extending along a first preset direction and connected to one end of the conductive connector; the abutment is used to abut against the sub-grid line or main grid line of the solar cell.

[0037] In some embodiments, the plurality of probes are arranged in a row along a first preset direction and in a column along a second preset direction intersecting the first preset direction; two adjacent abutments along the second preset direction are staggered along the first preset direction.

[0038] In some embodiments, the dimension of the abutment member along the first preset direction is L;

[0039] In two abutting members that are adjacent along the second preset direction and staggered along the first preset direction, the distance between the geometric center of one member and the geometric center of the other member in the first preset direction is S; 1 / 2L≤S<L.

[0040] In some embodiments, the plurality of probes are arranged at intervals along a first preset direction, and the distance between two adjacent abutments is less than the first preset distance.

[0041] In some embodiments, the first preset spacing is 0.2mm-2mm.

[0042] In some embodiments, the dimension of the abutment member along the first preset direction is L, where 10mm≤L≤26.25mm.

[0043] In some embodiments, the conductive connector includes a plurality of conductive rods, which are distributed in parallel at intervals and pass through the mounting member, and the plurality of conductive rods are connected to the abutment member.

[0044] Fourthly, embodiments of this application provide a laser-assisted sintering apparatus for performing laser-assisted sintering processing on solar cells, including:

[0045] The conductive device described in any of the above embodiments;

[0046] A conductive support device is used to support the solar cell; and the conductive support device is also used to be electrically connected to the solar cell.

[0047] The laser-assisted sintering equipment provided in this application includes a conductive device and a conductive support device as described in any of the above embodiments. The conductive device includes a mounting component, a probe assembly, and multiple conductive modules. The probe assembly includes multiple probes spaced apart along a first preset direction and passing through the mounting component. The multiple conductive modules are connected one-to-one with the multiple probes. Thus, during laser-assisted sintering of the solar cell, the conductive support device carries the solar cell and is electrically connected to it. The multiple probes are electrically connected to multiple sub-grid lines of the solar cell to apply a bias voltage to the solar cell. Based on the conductivity resistance of the sub-grid lines, the conductive modules control the bias voltage applied to the corresponding probes, thereby making the bias voltage on each sub-grid line positively correlated with its conductivity resistance. This reduces the Joule heat generated by the local current flowing through each sub-grid line, thus reducing over-burning or under-burning, which is beneficial for the sintering of the sub-grid lines. Consequently, multiple sub-grid lines on the solar cell can form good contact with the semiconductor layer of the solar cell, thereby improving the conversion efficiency of the solar cell. Attached Figure Description

[0048] Figure 1 is a flowchart of a method for preparing a solar cell according to one embodiment of this application.

[0049] Figure 2 is a schematic diagram of the structure of a conductive device provided in one embodiment of this application.

[0050] Figure 3 is a schematic diagram of the conductive device provided in one embodiment of this application from another perspective.

[0051] Figure 4 is a schematic diagram of the distribution of multiple abutting members in a conductive device provided in one embodiment of this application.

[0052] Figure 5 is a schematic diagram showing another distribution of multiple abutting members in a conductive device provided in one embodiment of this application.

[0053] Figure 6 is a partial structural schematic diagram of a laser-assisted sintering device provided in one embodiment of this application.

[0054] Figure 7 is a schematic diagram of the structure of a solar cell in one embodiment of this application.

[0055] Figure 8 is a cross-sectional view along line II-II in Figure 7.

[0056] Figure 9 is a schematic diagram of the structure of the conductive module in a laser-assisted sintering device provided in one embodiment of this application.

[0057] Explanation of reference numerals in the attached drawings: 10, conductive device; 11, mounting component; 12, probe assembly; 121, probe; 1211, conductive connector; 1211a, conductive rod; 1212, abutment component; 13, conductive module; 20, conductive support device; 30, solar cell; 31, main grid line; 32, sub-grid line; X, first preset direction; Y, second preset direction. 110, substrate; 160, tunneling layer; 170, doped polycrystalline silicon layer; 120, emitter; 190A, 190B, passivation layer; 130, antireflection layer; 132, conductive component; 134, voltage control module; 136, conductive block; 134', voltage controller; 40, lifting control bracket. Detailed Implementation

[0058] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0059] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0060] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0061] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0062] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0063] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0064] It should be understood that the terms “comprising,” “including,” “having,” “containing,” and any derivative thereof used in this application should be considered as non-exclusively including the features referred to by the term, and do not imply the exclusion of the existence of any additional features unless otherwise stated or implied. Any reference to prior art in this specification is not, and should not be construed as, an admission or in any way an implication that such prior art constitutes part of common general knowledge.

[0065] In some cases, for brevity and / or to aid in understanding the scope of this disclosure, a single embodiment may combine multiple features. It should be understood that in such cases, these multiple features may be provided individually (e.g., in different embodiments) or in any other suitable combination. Conversely, when different features are described in different embodiments, these different features may be combined to form a single embodiment unless otherwise stated or implied. This principle also applies to the claims, whose claims may be rearranged in any combination, i.e., any claim may be modified to include any feature defined in the other claims. In this application, unless otherwise stated or implied, the phrase “at least one” followed by a list of items refers to any combination of the listed items, including single members. Whether the expression “at least one of a, b, or c” or “at least one of a, b, and c”, it is intended to cover: a, b, c, combinations of a and b, combinations of a and c, combinations of b and c, and combinations of a, b, and c.

[0066] In this application, "conductive resistance" refers to the transmission resistance of the gate line, that is, the resistance of the gate line itself.

[0067] The contact resistance between the semiconductor layer and the surface metal electrodes of a solar cell has a significant impact on the cell's conversion efficiency; the lower the metal-semiconductor contact resistance, the higher the conversion efficiency. Currently, the main method to reduce metal-semiconductor contact resistance is Laser Enhanced Contact Optimization (LECO), also known as laser-assisted sintering. This process involves irradiating the solar cell with a high-intensity laser to excite charge carriers and applying a bias voltage (also known as a reverse voltage) to separate the charge carriers, forming a local current and initiating sintering, thereby reducing the contact resistance between the metal and the semiconductor.

[0068] However, in related technologies, the LECO process for solar cells is prone to problems of over-burning and under-burning of the grid lines. This results in significant differences in the contact effect between the grid lines and the semiconductor layer in different regions of the solar cell, greatly limiting the improvement of the conversion efficiency of solar cells by the LECO process. Specifically, in related technologies, when the same bias voltage is applied to all sub-grid lines, some sub-grid lines may over-burn due to their lower resistance, while others may under-burn due to their higher resistance.

[0069] Based on the above-mentioned technical problems, this application provides a solar cell and its preparation method, a conductive device, and a laser-assisted sintering equipment, so that multiple sub-grid lines of the solar cell can form good contact with the semiconductor layer, thereby improving the conversion efficiency of the solar cell.

[0070] Referring to Figure 1, in a first aspect, embodiments of this application provide a method for fabricating a solar cell, comprising:

[0071] S10. Form a grid pattern on the battery body. The grid pattern includes N parallel and spaced sub-grid lines (N is an integer greater than or equal to 2).

[0072] S20. Apply a bias voltage to N sub-gate lines, wherein the bias voltage on each sub-gate line is positively correlated with its conductivity resistance.

[0073] S30. Perform laser-assisted sintering on N sub-gate lines.

[0074] The conductivity resistance of each sub-grid line can be obtained, but is not limited to, through multiple experiments. For example, before applying a bias voltage, the conductivity resistance of each of the N sub-grid lines formed on the battery body can be measured. The bias voltage is positively correlated with the conductivity resistance, meaning that the greater the conductivity resistance, the greater the bias voltage, and vice versa.

[0075] The solar cell fabrication method provided in this application applies a bias voltage to N sub-grid lines, and makes the bias voltage on each sub-grid line positively correlated with its conductivity resistance. Laser-assisted sintering is then performed on the N sub-grid lines. In other words, a corresponding bias voltage is applied to each sub-grid line according to its conductivity resistance, so that the local current flowing through each sub-grid line generates corresponding Joule heat, reducing over-burning or under-burning, which is beneficial to the sintering of the sub-grid lines. As a result, all N sub-grid lines can form good contact with the semiconductor layer of the cell body, thereby improving the conversion efficiency of the solar cell.

[0076] Solar cells can be tunneling layer passivated contact cells (TOPCon cells), back contact cells (BC cells), or other types of solar cells.

[0077] Taking a TOPCon cell as an example, please refer to Figures 7 and 8. In some embodiments, the cell body of the solar cell 30 includes a substrate 110, a tunneling layer 160, a doped polycrystalline silicon layer 170, a first functional layer, an emitter 120, and a second functional layer. The tunneling layer 160 is disposed on a first side of the substrate 110. The doped polycrystalline silicon layer 170 is disposed on the tunneling layer 160, and the first functional layer is disposed on the doped polycrystalline silicon layer 170. The emitter 120 is disposed on a second side of the substrate 110. The second functional layer is disposed on the emitter 120. The first and second functional layers can be, but are not limited to, passivation layers 190A and 190B, antireflection layer 130, etc. The materials of the passivation layers 190A and 190B can be, but are not limited to, one or more of aluminum oxide films. The material of the antireflection layer 130 can be, but is not limited to, one or more of silicon nitride films. Grid paste is disposed on the first and second functional layers to form main grid lines 31 and sub-grid lines 32, thereby forming a grid pattern on the cell body. Using the above-described preparation method, multiple sub-gate lines 32 pass through the first functional layer and form good contact with the doped polycrystalline silicon layer 170. In addition, multiple sub-gate lines 32 pass through the second functional layer and form good contact with the emitter 120, thereby improving the conversion efficiency of the TOPCon cell.

[0078] In S10, N sub-gate lines in the gate pattern can be set on the same side of the substrate 110, such as the first side or the second side.

[0079] In some embodiments, in S20, applying a bias voltage to the N sub-gate lines includes:

[0080] S22, divide the N sub-grid lines into M grid line groups along the first direction (M is an integer greater than or equal to 2), the first direction is perpendicular to the thickness direction of the battery body, and the first direction is perpendicular to the extension direction of the sub-grid lines.

[0081] S24, apply a bias voltage to M gate line groups, the bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group;

[0082] The average conductivity resistance of the grid line group is the average conductivity resistance of all sub-grid lines in the grid line group, such as the arithmetic mean.

[0083] In some embodiments, such as when the thickness of each gate line is substantially the same, in S24, a bias voltage is applied to the M gate line groups. The bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group. This can be achieved by making the bias voltage on each gate line group negatively correlated with the average linewidth of that gate line group. The average linewidth of the gate line group is the average of the linewidths of all sub-gate lines in the gate line group, for example, the arithmetic mean.

[0084] Correspondingly, before applying the bias voltage, the method may also include measuring the average conductivity resistance of each gate line group or measuring the average linewidth of each gate line group.

[0085] In some embodiments, the M gate line groups are implemented by spatially dividing the N sub-gate lines into multiple groups along a first direction, that is, the sub-gate lines in each gate line group are adjacent to each other, and there are no gate lines from other groups between the gate lines in the same group.

[0086] In some embodiments, the number of sub-gate lines in each gate line group may be equal or unequal.

[0087] Specifically, multiple regions can be divided on the battery body along the first direction, and the sub-grid lines covered by each region form a grid line group.

[0088] In some embodiments, adjacent grid line groups may share the same or some sub-grid lines, that is, two adjacent regions divided along the first direction may overlap each other, but not completely overlap.

[0089] In other embodiments, adjacent gate line groups do not share sub-gate lines; each sub-gate line belongs to one gate line group and only to one gate line group. That is, there is no overlap between two adjacent regions divided along the first direction, and multiple regions can completely cover the sub-gate lines on the same side of the substrate.

[0090] It is understandable that the values ​​of M and N are integers greater than 2, which can, to a certain extent, achieve the application of a corresponding bias voltage based on the different conductive resistances of different sub-grid lines or the different average resistances of different grid line groups. Compared with the application of the same bias voltage to all sub-grid lines in related technologies, this can reduce over-burning or under-burning to a certain extent, so that all N sub-grid lines can form good contact with the semiconductor layer of the cell body, thereby improving the conversion efficiency of the solar cell.

[0091] In some embodiments, M can be a fixed value, such as any integer in the range of 2-100, for example, greater than 3, so as to better reflect the regional changes. It can be further selected as 5-30, and even further selected as 8-20, such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, or fall within the range of any two of the above values. The number of subgrid lines in each grid group can also be a fixed value, for example, any integer in the range of 1-100, such as 5-50, or further, 10-40, for example, 1, 2, 3, 4, 5, 6, 7, 8, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, or falling within any two of the above values.

[0092] In other embodiments, the specific value of M may be determined based on the total number of sub-gate lines N and / or the consistency between the gate lines. For example, the larger the value of N, the larger the value of M can be; the lower the gate line consistency, the larger the value of M can be; and vice versa.

[0093] For example, the value of M can make the difference in conductivity resistance of sub-gate lines within the same gate line group smaller (e.g., all falling within a first preset range), and / or, the value of M can make the difference in average conductivity resistance between adjacent gate line groups smaller (e.g., all falling within a second preset range).

[0094] Alternatively, the value of M can make the difference in linewidth of sub-grid lines within the same grid line group smaller (e.g., all falling within a third preset range), and / or the value of M can make the difference in average linewidth between adjacent grid line groups smaller (e.g., all falling within a fourth preset range).

[0095] In some embodiments, the total number of sub-gate lines N can be limited based on M, for example, N<100, 150, 200, 250 or 300, thereby determining the number of sub-gate lines in each gate line group M.

[0096] In some embodiments, S20 applies a bias voltage to the N sub-gate lines, specifically including:

[0097] The N sub-grid lines are equally divided into M grid line groups along the first direction. The conductivity of all sub-grid lines in each grid line group falls within the same first preset range. The difference in average conductivity of two adjacent grid line groups falls within the same second preset range. The average conductivity of the grid line group is the average conductivity of all sub-grid lines in the grid line group, such as the arithmetic mean. The first direction is perpendicular to the thickness direction of the battery body and perpendicular to the extension direction of the sub-grid lines.

[0098] A bias voltage is applied to M gate line groups, and the bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group.

[0099] In the above process, the N sub-grid lines are divided into M grid line groups along the first direction according to their conductivity resistance. The conductivity resistance of all sub-grid lines in each grid line group falls within the same first preset range, and the difference in average conductivity resistance between two adjacent grid line groups falls within a second preset range. By applying a bias voltage to the M grid line groups, the bias voltage on each grid line group is positively correlated with the average conductivity resistance of that grid line group. This makes the bias voltage applied to each sub-grid line positively correlated with its conductivity resistance, causing the local current flowing through each sub-grid line to generate corresponding Joule heat, reducing over-burning or under-burning, which is beneficial to the sintering of the sub-grid lines. This allows all N sub-grid lines to form good contact with the semiconductor layer of the cell body, thereby improving the conversion efficiency of the solar cell.

[0100] In addition, by dividing the N sub-grid lines into M grid line groups and applying a bias voltage to the M grid line groups, the number of bias voltage parameters that need to be adjusted can be reduced, the difficulty of bias voltage adjustment can be reduced, and it is easy to achieve a positive correlation between the bias voltage and the conductivity resistance of each sub-grid line. This makes it easy to ensure that all N sub-grid lines form good contact with the semiconductor layer of the cell body, which is beneficial to improving the conversion efficiency of the solar cell.

[0101] In some embodiments, S20 applies a bias voltage to the N sub-gate lines, specifically including:

[0102] The N sub-gate lines are equally divided into M gate line groups along the first direction. The linewidth of all sub-gate lines in each gate line group falls within the same third preset range. The difference in the average linewidth of two adjacent gate line groups falls within the same fourth preset range. The average linewidth of the gate line group is the average of the linewidths of all sub-gate lines in the gate line group, such as the arithmetic mean. The first direction is perpendicular to the thickness direction of the battery body and perpendicular to the extension direction of the sub-gate lines.

[0103] A bias voltage is applied to M gate line groups. The bias voltage on each gate line group is negatively correlated with the average linewidth of the gate line group. Thus, when the thickness of each gate line is basically the same, it can be positively correlated with the average conductivity resistance of the gate line group. The average conductivity resistance of the gate line group is the average value of the conductivity resistance of all sub-gate lines in the gate line group.

[0104] In the above process, the N sub-grid lines are divided into M grid line groups along the first direction according to the linewidth of the sub-grid lines. The linewidth of all sub-grid lines in each grid line group falls within the same third preset range, and the difference in the average linewidth of two adjacent grid line groups falls within a fourth preset range. By applying a bias voltage to the M grid line groups, the bias voltage on each grid line group is negatively correlated with the average linewidth of the grid line group. Thus, when the thickness of each grid line is basically the same, it can be basically positively correlated with the average conductivity resistance of the grid line group. This allows the bias voltage applied to each sub-grid line to be positively correlated with the conductivity resistance, causing the local current flowing through each sub-grid line to generate corresponding Joule heat, reducing over-burning or under-burning, which is beneficial to the sintering of the sub-grid lines. This allows all N sub-grid lines to form good contact with the semiconductor layer of the cell body, thereby improving the conversion efficiency of the solar cell.

[0105] In addition, the linewidth of the sub-grid lines is easy to measure. Based on the linewidth of the sub-grid lines, the N sub-grid lines can be easily divided into M grid line groups. Applying a bias voltage to the M grid line groups can reduce the number of bias voltage parameters that need to be adjusted, reduce the difficulty of bias voltage adjustment, and make it easy to achieve a positive correlation between the bias voltage and the conductivity resistance of each sub-grid line. This makes it easy to ensure that all N sub-grid lines form good contact with the semiconductor layer of the cell body, which is beneficial to improving the conversion efficiency of the solar cell.

[0106] In some embodiments, S30 involves laser-assisted sintering of the N sub-gate lines, specifically including:

[0107] N sub-gate lines are irradiated with a laser to sinter them.

[0108] In the above process, laser irradiation is applied to N sub-grid lines. The laser heats the region where the sub-grid lines are located, exciting charge carriers. Under the action of a bias voltage, a local current is generated. This local current flows through the sub-grid lines, generating Joule heat, which causes the sub-grid lines to sinter. By applying a bias voltage proportional to the conductivity of each sub-grid line (or the average conductivity of each grid line group), a corresponding proportion of Joule heat is generated. This reduces over-burning or under-burning, ensuring good contact between the sub-grid lines and the semiconductor layer of the solar cell body, reducing contact resistance, and thus improving the conversion efficiency of the solar cell.

[0109] In some embodiments, the power of the laser is between 9W and 15W. Specifically, the power of the laser can be any value among 9W, 10W, 11W, 12W, 13W, 14W, 15W or 9W to 15W, without any special limitation.

[0110] Secondly, embodiments of this application provide a solar cell prepared by the preparation method described in any of the above embodiments. This improves the conversion efficiency of the solar cell.

[0111] Thirdly, referring to Figures 2 to 4, this application provides a conductive device 10 applied to a solar cell 30, including a mounting component 11, a probe assembly 12, and multiple conductive modules 13; the probe assembly 12 includes multiple probes 121 arranged at intervals along a first preset direction X and passing through the mounting component 11, the probes 121 being used for electrical connection with the sub-grid lines 32 of the solar cell 30; the multiple conductive modules 13 are spaced apart on the mounting component 11; the multiple conductive modules 13 are connected one-to-one with the multiple probes 121, and the conductive modules 13 are used to control the bias voltage applied to the corresponding probes 121.

[0112] The conductive device 10 provided in this embodiment of the application, by setting a mounting component 11, a probe assembly 12, and multiple conductive modules 13, makes the probe assembly 12 include multiple probes 121 arranged at intervals along a first preset direction X and passing through the mounting component 11. The multiple conductive modules 13 are connected one-to-one with the multiple probes 121. In this way, when performing laser-assisted sintering on the solar cell 30, the first preset direction X can be made perpendicular to the thickness direction of the solar cell 30 and perpendicular to the extension direction of the sub-grid line 32. That is, the first preset direction X is parallel to or coincides with the first direction. In this way, the multiple probes 121 can be arranged along the solar cell... The N sub-grid lines 32 on the battery 30 are arranged in a directional manner at intervals. This facilitates the electrical connection of multiple probes 121 with the N sub-grid lines 32 of the solar cell 30. Based on the conductivity resistance of the sub-grid lines 32, the bias voltage applied to the corresponding probe 121 is controlled by the conductive module 13. This ensures that the bias voltage on each sub-grid line 32 is positively correlated with its conductivity resistance, causing the local current flowing through each sub-grid line 32 to generate corresponding Joule heat, reducing over-burning or under-burning. This is beneficial for the sintering of the sub-grid lines 32, and further ensures that all N sub-grid lines 32 on the solar cell 30 form good contact with the semiconductor layer of the solar cell 30, thereby improving the conversion efficiency of the solar cell 30.

[0113] It should be noted that the probe 121 is used to electrically connect with the sub-grid line 32 of the solar cell 30. This can be understood as the probe 121 being able to directly connect with the sub-grid line 32 of the solar cell 30, for example, the probe 121 being directly contacted and electrically connected with the sub-grid line 32 of the solar cell 30; or the probe 121 being able to indirectly connect with the sub-grid line 32 of the solar cell 30, for example, the probe 121 being directly contacted and electrically connected with the main grid line 31 that overlaps with the sub-grid line 32, thereby indirectly connecting with the sub-grid line 32.

[0114] Referring to Figure 9, in some embodiments, the conductive module 13 includes a conductive element 132 and a voltage control module 134. The conductive element 132 is connected to the corresponding probe 121; the voltage control module 134 is electrically connected to the conductive element and is used to control the bias voltage applied to the corresponding probe 121.

[0115] Thus, by setting the conductive component 132 and the voltage control module 134, the conductive module 13 can be easily connected to the probe 121, and the conductive module 13 can easily control the bias voltage applied to the corresponding probe 121.

[0116] In some embodiments, the conductive element 132 includes a conductive block 136 disposed within the mounting member 11, and the conductive block 136 has a mounting hole through which the probe 121 passes; the voltage control module 134 includes a voltage controller 134' disposed on the mounting member 11 and electrically connected to the conductive block 136. In some embodiments, the mounting member 11 can be a strip structure, and the length of the mounting member 11 can be greater than or equal to the width of the battery body, so that when the length direction of the mounting member 11 is arranged perpendicular to the length direction of the sub-grid line 32, it can span all the sub-grid lines 32.

[0117] Thus, by setting conductive block 136 and voltage controller 134', conductive block 136 is set inside mounting component 11, and mounting hole for probe 121 to pass through is provided on conductive block 136, probe 121 can be easily installed on mounting component 11, and bias voltage applied to probe 121 can be easily controlled by voltage controller 134'.

[0118] Referring to Figures 2 and 3, in some embodiments, the probe 121 includes a conductive connector 1211 and an abutment 1212. The conductive connector 1211 passes through the mounting member 11, and the abutment 1212 extends along a first preset direction X and is connected to one end of the conductive connector 1211. The abutment 1212 is used to abut against the sub-grid line 32 or the main grid line 31 of the solar cell 30.

[0119] Thus, by providing a conductive connector 1211 and abutment 1212, the conductive connector 1211 passes through the mounting member 11, making it convenient to pass the probe 121 through the mounting member 11; the abutment 1212 extends along the first preset direction X and is connected to one end of the conductive connector 1211, and the abutment 1212 is used to abut against the sub-grid line 32 or the main grid line 31 of the solar cell 30, thus facilitating the electrical connection between the probe 121 and the sub-grid line 32 so as to apply a bias voltage to the sub-grid line 32.

[0120] Understandably, the abutment 1212 is used to abut against the sub-grid line 32 or the main grid line 31 of the solar cell 30. That is, the abutment 1212 can directly abut against the sub-grid line 32 of the solar cell 30, and the probe 121 can be directly electrically connected to the sub-grid line 32 of the solar cell 30. The abutment 1212 can also abut against the main grid line 31 of the solar cell 30. The abutment 1212 is electrically connected to the sub-grid line 32 through the main grid line 31. That is, the probe 121 can be electrically connected to the sub-grid line 32 through the main grid line 31.

[0121] In some embodiments, the abutment 1212 may be used to abut only one sub-gate line 32, and the number of probes 121 in the probe assembly 12 may be equal to the number of sub-gate lines 32, thereby applying different bias voltages to different sub-gate lines 32 respectively, and the bias voltage on each sub-gate line is positively correlated with the conductivity resistance of that sub-gate line.

[0122] In other embodiments, a single abutment 1212 can be used to abut against multiple sub-gate lines 32; for example, the abutment 1212 can be a strip-shaped structure. When electrically connected to the main gate line 31 and the sub-gate line 32, the length direction of the abutment 1212 is substantially perpendicular to the length direction of the sub-gate line 32, allowing the abutment 1212 to span multiple sub-gate lines 32 to form multiple gate line groups. The number of probes 121 in the probe assembly 12 can be equal to the number of gate line groups, thereby applying different bias voltages to different gate line groups. The bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group.

[0123] In some embodiments, the extension direction of the conductive connector 1211 is perpendicular to the surface of the solar cell 30, that is, it extends along the thickness direction of the cell body, so that the abutment 1212 at the end of the conductive connector 1211 presses vertically against the sub-grid line 32 or the main grid line 31, and applies a certain pressure to the sub-grid line 32 or the main grid line 31, thereby ensuring the reliability of the connection and reducing the contact resistance.

[0124] Referring to Figure 4, in some embodiments, a plurality of probes 121 are arranged in a row along a first preset direction X and in a column along a second preset direction Y intersecting the first preset direction X; two adjacent abutment members 1212 along the second preset direction Y are arranged in an alternating manner along the first preset direction X. Specifically, two adjacent abutment members 1212 are spaced apart from each other in the second preset direction Y, and the ends of two adjacent abutment members 1212 overlap each other in the first preset direction X.

[0125] During laser-assisted sintering of the solar cell 30, the N sub-grid lines 32 on the solar cell 30 can be divided into M grid line groups according to the conductivity or linewidth of the sub-grid lines 32. The first preset direction X is parallel to the direction in which the N sub-grid lines 32 are spaced apart, and the second preset direction Y is parallel to the extension direction of the sub-grid lines 32. This allows multiple probes 121 to be arranged in rows along the direction in which the N sub-grid lines 32 are spaced apart, and in columns along the extension direction of the N sub-grid lines 32. Each probe 121 corresponds one-to-one with one of the M grid line groups. Since two adjacent contact members 1212 along the second preset direction Y are staggered along the first preset direction X,... This allows each probe 121's contact 1212 to contact all sub-grid lines 32 in a grid group. In other words, each probe 121 can be electrically connected to all sub-grid lines 32 in a grid group. The bias voltage applied to the corresponding probe 121 is controlled by the conductive module 13 to be positively correlated with the average conductivity resistance of the grid group. This ensures that the bias voltage applied to each sub-grid line 32 is positively correlated with its conductivity resistance, causing the local current flowing through each sub-grid line 32 to generate corresponding Joule heat, reducing over-burning or under-burning, thus facilitating the sintering of the sub-grid lines 32. Consequently, all N sub-grid lines 32 form good contact with the semiconductor layer of the solar cell 30, improving the conversion efficiency of the solar cell 30. Furthermore, when the solar cell 30 is a gridless solar cell 30, it ensures that all N sub-grid lines 32 on the gridless solar cell 30 form good contact with the semiconductor layer of the solar cell 30, avoiding the problem of striped EL defects in the gridless solar cell 30.

[0126] Referring to Figure 4, in some embodiments, the dimension of the abutment 1212 along the first preset direction X is L; among the two abutment members 1212 that are adjacent along the second preset direction Y and staggered along the first preset direction X, the distance between the geometric center of one and the geometric center of the other in the first preset direction X is S; 1 / 2L≤S<L.

[0127] In this way, it can be ensured that the contact part 1212 of each probe 121 abuts against all the sub-grid lines 32 in a grid line group, and each probe 121 can be electrically connected to all the sub-grid lines 32 in a grid line group. This allows all N sub-grid lines 32 on the solar cell 30 to form good contact with the semiconductor layer of the solar cell 30, improving the conversion efficiency of the solar cell 30. In addition, it can avoid the problem of striped EL defects in the solar cell 30 without a main grid.

[0128] In some embodiments, the abutment 1212 is configured as a rod-shaped structure, and the cross-section of the abutment 1212 is rectangular, triangular or circular.

[0129] Referring to Figure 5, in some embodiments, a plurality of probes 121 are arranged at intervals along a first preset direction X, and the distance between two adjacent abutments 1212 is less than the first preset distance.

[0130] The first preset spacing can be the spacing between two adjacent sub-grid lines 32. This ensures that the first preset spacing corresponds to the spacing between two adjacent sub-grid lines 32, meaning the spacing between two adjacent contact members 1212 is smaller than the spacing between two adjacent sub-grid lines 32. This guarantees that the contact member 1212 of each probe 121 contacts all sub-grid lines 32 in a grid group, and each probe 121 can be electrically connected to all sub-grid lines 32 in a grid group. This allows all N sub-grid lines 32 on the solar cell 30 to form good contact with the semiconductor layer of the solar cell 30, improving the conversion efficiency of the solar cell 30. Furthermore, it avoids the problem of striped EL defects in gridless solar cells 30.

[0131] In some embodiments, the first preset spacing is 0.2mm-2mm. Specifically, the first preset spacing can be any value between 0.2mm, 0.4mm, 0.6mm, 0.8mm, 1.0mm, 1.2mm, 1.4mm, 1.6mm, 1.8mm, 2.0mm or 0.2mm-2mm, and there is no limitation thereto.

[0132] In some embodiments, the dimension of the abutment member 1212 along the first preset direction X is L, where 10mm≤L≤26.25mm.

[0133] Specifically, the spacing between adjacent sub-gate lines 32 is typically between 0.2mm and 2mm, and the number of fine gates ranges from tens to hundreds. In this embodiment, by making the dimension L of the abutment 1212 along the first preset direction X between 10mm and 26.25mm, one abutment 1212 can abut against several or even dozens of sub-gate lines 32. This reduces the number of abutment 1212 and conductive connector 1211, thereby reducing the cost of the conductive device 10.

[0134] In some embodiments, L can be 10mm to 15mm, 15mm to 20mm, or 20mm to 26.25mm.

[0135] In some embodiments, L can be 10mm, 12mm, 14mm, 16mm, 18mm, 20mm, 22mm, 24mm or 26mm.

[0136] In some embodiments, the distance K between two adjacent abutment members 1212 along the second preset direction Y is 1.2mm to 20mm.

[0137] In some embodiments, K can be 1.2mm to 5mm, 5mm to 10mm, 10mm to 15mm, or 15mm to 20mm.

[0138] In some embodiments, K can be 1.2mm, 2mm, 4mm, 5mm, 7mm, 9mm, 10mm, 12mm, 14mm, 15mm, 17mm, 19mm, or 20mm.

[0139] Referring to Figure 3, in some embodiments, the conductive connector 1211 includes a plurality of conductive rods 1211a, which are distributed in parallel at intervals and pass through the mounting member 11, and are connected to the abutment member 1212.

[0140] In some embodiments, the extension direction of the conductive rod 1211a is perpendicular to the surface of the solar cell 30, that is, it extends along the thickness direction of the cell body.

[0141] Therefore, when the contact member 1212 abuts against the sub-grid line 32 or the main grid line 31, the multiple conductive rods 1211a can apply downward pressure to the contact member 1212 from multiple positions, preventing the contact member 1212 from tilting during the abutment process. This ensures that the contact member 1212 makes full contact with the top surface of the sub-grid line 32 or the main grid line 31, thereby enabling all N sub-grid lines 32 on the solar cell 30 to form good contact with the semiconductor layer of the solar cell 30, improving the conversion efficiency of the solar cell 30. In addition, it avoids the problem of striped EL defects in solar cells 30 without a main grid.

[0142] Referring to Figure 3, in some embodiments, multiple conductive rods 1211a are distributed at intervals along a first preset direction X.

[0143] Referring to Figure 6, in a fourth aspect, an embodiment of this application provides a laser-assisted sintering apparatus for laser-assisted sintering of a solar cell 30. The laser-assisted sintering apparatus includes a conductive device 10 and a conductive support device 20 as described in any of the above embodiments. The conductive support device 20 is used to support the solar cell 30 and is also used to be electrically connected to the solar cell 30.

[0144] Understandably, the laser-assisted sintering equipment also includes a laser source, which is located above the conductive support device 20 and is used to irradiate the sub-grid lines 32 of the solar cell 30.

[0145] In some embodiments, the laser-assisted sintering equipment further includes a lifting control bracket 40, which is slidably connected to the conductive device 10. The conductive device 10 can slide along the slide rail of the lifting control bracket 40 in a direction perpendicular to the surface of the conductive support device 20. Thus, when the solar cell 30 is disposed on the surface of the conductive support device 20, the lifting control bracket 40 can control the conductive device 10 to apply pressure to the solar cell 30 in a direction perpendicular to the surface of the conductive support device 20, causing the abutment member 1212 to press vertically against the sub-grid line 32 or the main grid line 31, and applying a certain pressure to the sub-grid line 32 or the main grid line 31, thereby ensuring the reliability of the connection and reducing contact resistance. In one embodiment, both ends of the mounting member 11 can be slidably connected to the lifting control bracket 40, so that the entire mounting member 11 is parallel to the surface of the conductive support device 20, and the mounting member 11 can slide in a direction perpendicular to the surface of the conductive support device 20.

[0146] The laser-assisted sintering equipment provided in this application includes a conductive device 10 and a conductive support device 20 as described in any of the above embodiments. The conductive device 10 includes a mounting component 11, a probe assembly 12, and a plurality of conductive modules 13. The probe assembly 12 includes a plurality of probes 121 arranged at intervals along a first preset direction X and passing through the mounting component 11. The plurality of conductive modules 13 are connected to the plurality of probes 121 in a one-to-one correspondence. Thus, during laser-assisted sintering of the solar cell 30, the conductive support device 20 supports the solar cell 30 and is electrically connected to it. Multiple probes 121 are electrically connected to the N sub-grid lines 32 of the solar cell 30 to apply a bias voltage to the solar cell 30. Based on the conductivity resistance of the sub-grid lines 32, the conductive module 13 controls the bias voltage applied to the corresponding probe 121, thereby making the bias voltage on each sub-grid line 32 positively correlated with its conductivity resistance. This reduces the Joule heat generated by the local current flowing through each sub-grid line 32, thus facilitating the sintering of the sub-grid lines 32. Consequently, all N sub-grid lines 32 on the solar cell 30 can form good contact with the semiconductor layer of the solar cell 30, thereby improving the conversion efficiency of the solar cell 30.

[0147] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0148] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for preparing a solar cell, characterized in that, include: A grid pattern is formed on the battery body, the grid pattern comprising N parallel and spaced sub-grid lines, where N is an integer greater than or equal to 2; A bias voltage is applied to N sub-gate lines, wherein the bias voltage on each sub-gate line is positively correlated with its conductivity resistance; Laser-assisted sintering is performed on the N sub-gate lines.

2. The method for preparing a solar cell according to claim 1, characterized in that, The step of applying bias voltages to the N sub-gate lines includes: The N sub-grid lines are divided into M grid line groups along the first direction, where M is an integer greater than or equal to 2. The first direction is perpendicular to the thickness direction of the battery body and perpendicular to the extension direction of the sub-grid lines. A bias voltage is applied to M gate line groups, and the bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group. The average conductivity resistance of the grid line group is the average conductivity resistance of all sub-grid lines in the grid line group.

3. The method for preparing a solar cell according to claim 2, characterized in that, The application of bias voltages to the M gate line groups, wherein the bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group, includes: The bias voltage on each gate line group is negatively correlated with the average linewidth of that gate line group.

4. The method for preparing a solar cell according to claim 2 or 3, characterized in that, M is 2-100, can be >3, can be 5-30, and can be 8-20.

5. The method for preparing a solar cell according to any one of claims 2-4, characterized in that, The number of sub-grid lines in each grid group is 1-100, optionally 5-50, and further optionally 10-40.

6. The method for preparing a solar cell according to any one of claims 1-5, characterized in that, The step of applying a bias voltage to the N sub-gate lines includes: The N sub-grid lines are equally divided into M grid line groups along a first direction. The conductivity of all sub-grid lines in each grid line group falls within the same first preset range. The difference in average conductivity of two adjacent grid line groups falls within the same second preset range. The average conductivity of a grid line group is the average conductivity of all sub-grid lines in the grid line group. The first direction is perpendicular to the thickness direction of the battery body and perpendicular to the extension direction of the sub-grid lines. A bias voltage is applied to M gate line groups, and the bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group.

7. The method for preparing a solar cell according to any one of claims 1-5, characterized in that, The step of applying a bias voltage to the N sub-gate lines includes: The N sub-gate lines are equally divided into M gate line groups along a first direction. The linewidth of all the sub-gate lines in each gate line group falls within the same third preset range. The difference in the average linewidth of two adjacent gate line groups falls within the same fourth preset range. The average linewidth of the gate line group is the average of the linewidths of all the sub-gate lines in the gate line group. The first direction is perpendicular to the thickness direction of the battery body and perpendicular to the extension direction of the sub-gate lines. A bias voltage is applied to M gate line groups, and the bias voltage on each gate line group is negatively correlated with the average linewidth of the gate line group.

8. The method for preparing a solar cell according to any one of claims 1-7, characterized in that, The step of performing laser-assisted sintering on the N sub-gate lines includes: The N sub-gate lines are irradiated with a laser to sinter them.

9. The method for preparing a solar cell according to claim 8, characterized in that, The power of the laser is between 9W and 15W.

10. A solar cell, characterized in that, It is prepared by the preparation method according to any one of claims 1 to 9.

11. A conductive device applied to a solar cell, characterized in that, include: Installation components; The probe assembly includes a plurality of probes arranged at intervals along a first preset direction and passing through the mounting member, the probes being used for electrical connection with the sub-grid lines of the solar cell; Multiple conductive modules are spaced apart on the mounting component; Multiple conductive modules are connected one-to-one with multiple probes, and the conductive modules are used to control the bias voltage applied to the corresponding probes.

12. The conductive device according to claim 11, characterized in that, The conductive module includes a conductive component and a voltage control module. The conductive component is connected to the corresponding probe. The voltage control module is electrically connected to the conductive component and is used to control the bias voltage applied to the corresponding probe.

13. The conductive device according to claim 12, characterized in that, The conductive component includes a conductive block, which is disposed within the mounting component. The conductive block has a mounting hole, and the probe passes through the mounting hole. The voltage control module includes a voltage controller, which is mounted on the mounting component and connected to the conductive block.

14. The conductive device according to any one of claims 11-13, characterized in that, The probe includes a conductive connector and an abutment. The conductive connector is inserted into the mounting component, and the abutment extends along a first preset direction and is connected to one end of the conductive connector. The abutment is used to abut against the sub-grid line or main grid line of the solar cell.

15. The conductive device according to claim 14, characterized in that, The plurality of probes are arranged in a row along a first preset direction and in a column along a second preset direction that intersects with the first preset direction; two adjacent abutments along the second preset direction are arranged in an alternating manner along the first preset direction.

16. The conductive device according to claim 15, characterized in that, The dimension of the abutting member along the first preset direction is L; In two abutting members that are adjacent along the second preset direction and staggered along the first preset direction, the distance between the geometric center of one member and the geometric center of the other member in the first preset direction is S; 1 / 2L≤S<L.

17. The conductive device according to claim 14, characterized in that, The plurality of probes are arranged at intervals along a first preset direction, and the distance between two adjacent abutment members is less than the first preset distance.

18. The conductive device according to claim 17, characterized in that, The first preset spacing is 0.2mm-2mm.

19. The conductive device according to any one of claims 14 to 18, characterized in that, The dimension of the abutment member along the first preset direction is L, where 10mm≤L≤26.25mm.

20. The conductive device according to claim 19, characterized in that, The conductive connector includes multiple conductive rods, which are distributed in parallel at intervals and pass through the mounting component. The multiple conductive rods are connected to the abutment component.

21. A laser-assisted sintering apparatus for performing laser-assisted sintering treatment on solar cells, characterized in that, include: The conductive device according to any one of claims 11 to 20; A conductive support device is used to support the solar cell; Furthermore, the conductive support device is also used for electrical connection with the solar cell.

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