A method for obtaining a supercapacitor and the supercapacitor obtained by the method

Abstract

The present invention relates to a method (100) for obtaining supercapacitors in which the structure obtained by growing molybdenum boride (Mo2B), a member of the metal boride family, homogeneously, atomically thick and in crystalline form on a copper substrate by using chemical vapor deposition technique is used as an electrode, and to a supercapacitor obtained by the method (100).

Description

[0001] DESCRIPTION

[0002] A METHOD FOR OBTAINING A SUPERCAPACITOR AND THE SUPERCAPACITOR OBTAINED BY THE METHOD

[0003] Technical Field

[0004] The present invention relates to a method for obtaining supercapacitors in which the structure obtained by growing molybdenum boride (M02B), a member of the metal boride family, homogeneously, atomically thick and in crystalline form on a copper substrate by using chemical vapor deposition technique is used as an electrode, and to a supercapacitor obtained by the method.

[0005] Background of the Invention

[0006] With the discovery of 2-dimensional (2D) boron structure (borophene), borophene and similar 2D boron compounds have shown that they have high potential in energy storage systems and supercapacitor applications due to their high electrical conductivity and high electron mobility. The new 2D family of materials obtained by compounding the element boron with transition metals is defined as metal borides (MBenes). Compounds such as molybdenum boride (M02B), nickel boride (Ni2B), cobalt boride (CoB) and manganese boride (MnB) can be given as examples of these new materials. Some metal borides may have properties such as higher electrical conductivity and higher durability compared to borophene, which is important for improving performance in supercapacitor applications. There are many methods for the fabrication of 2D borophene and MBenes such as chemical etching method, physical vapor deposition (PVD) method and chemical vapor deposition (CVD) method. Among these methods, the CVD method is an advantageous method for the mass fabrication of 2D materials such as M02B in terms of compatibility with microelectronic device fabrication technology and controllability of properties such as the number of layers and crystalline structure. For this reason, there is a need for new fabrication methods for obtaining new supercapacitors with improved performance by using the CVD method.

[0007] The Chinese patent document no. CN114956108, an application included in the state of the art, discloses a novel two-dimensional transition metal boride. The structural formula of the metal boride is shown as MxBy-Tz, M is scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, cadmium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold and mercury; b is a boron element, and T is a functional group on the surface of the metal boride material; wherein x, y and z are comer marks of the number of atoms in MxBy-Tz, x is equal to 1-5, y is equal to 1-5, and z is equal to 1-5. The boride is beneficial to transmission of ions in an energy storage device, has a catalytic function and has a good fixing effect on active substances. The boride can be used as an electrode material, can be particularly applied to lithium batteries and other batteries, and has application prospects in various energy storage fields such as hydrogen production by water decomposition, fuel cells, supercapacitors, solar cells and the like.

[0008] Summary of the Invention

[0009] An object of the present invention is to realize a method for obtaining supercapacitors in which the structure obtained by growing molybdenum boride (M02B), a member of the metal boride family, homogeneously, atomically thick and in crystalline form on a copper substrate by using chemical vapor deposition technique is used as an electrode, and a supercapacitor obtained by the method.

[0010] Detailed Description of the Invention “A Method for Obtaining a Supercapacitor and The Supercapacitor Obtained by the Method” realized to fulfil the objectives of the present invention is shown in the figures attached, in which:

[0011] Figure 1 is a flowchart of the inventive method.

[0012] Figure 2 is a graph of M02B XRD measurement.

[0013] Figure 3 is a graph of the improved capacity retention ratio of the M02B supercapacitor.

[0014] Figure 4 is the CV (cyclic voltammogram) graph of the M02B supercapacitor at different scan rates.

[0015] 100. Method

[0016] 101. Growing the M02B structures

[0017] 102. Growth of the M02B structure on a copper electrode

[0018] 103. Obtaining the supercapacitor with the use of electrodes

[0019] The inventive method (100) used for obtaining supercapacitors with high capacity retention ratio, comprises the steps of growing the M02B structure s ( 101 ) ; growth of the M02B structure on a copper electrode (substrate) (102); and obtaining the supercapacitor with the use of electrodes (103).

[0020] In the step of growing the M02B structures (101) of the inventive method (100), molybdenum trioxide (MoO ), diboron trioxide (B2O3) and boron (B) chemical powders are physically mixed at the ratios in equation (1) and this mixture is vaporized in the range of 850-1100°C.

[0021] 2 MOO3+ 3 B2O3 + 3 B + 6 H2= 2 M02B + 6 H2O . (1)

[0022] In the step of growth of the M02B structure on a copper electrode (substrate) (102) of the inventive method (100), the M02B structure obtained by equation (1) grows in the crystalline phase on the substrate, which is a copper (Cu) electrode, by chemical vapor deposition reaction in a chemical vapor deposition system.

[0023] In the step of obtaining the supercapacitor with the use of electrodes (103) of the inventive method (100), the surfaces with M02B of the copper electrodes on which M02B is deposited are positioned in such a way as to face each other and a membrane is placed between them.

[0024] The said invention relates to a supercapacitor which is obtained by following the steps of the method (100) described above, has a high capacity retention ratio and is used in energy storage systems requiring long service life such as electric vehicles, smart phones and unmanned aerial vehicles.

[0025] Industrial Application of the Invention

[0026] In this invention, M02B, a member of the metal boride family, was grown on copper substrate homogeneously, atomically thick and in crystalline form by using the CVD technique. After completing analysis processes such as optical microscopy, X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and atomic force microscopy (AFM), performance tests were performed by fabricating supercapacitors in which M02B structures grown on copper substrate were used as electrodes.

[0027] According to the result of XRD analysis, which is the most important indicator of the crystalline growth of molybdenum boride structures, a peak in the (022) plane was detected in the area of ~510(Figure 2). In addition, the lateral crystalline size was calculated as 43 nm. The XRD results of molybdenum boride structures are consistent with previously reported studies. After 12 hours of resting process, as a result of CV analysis performed at a scan rate of 5 mVs-1, the specific capacitance value of the supercapacitor fabricated from M02B structures in crystalline form grown on copper was detected as approximately 40 mF / cm2. In the capacity retention ratio measurement, over 99% retention was achieved after 20,000 cycles (Figures 3 and 4). With this invention the application of supercapacitor with high capacity retention ratio has been successfully realized for the first time by growing M02B structures in crystalline form on copper electrodes with the CVD technique. This invention has shown that M02B electrode -based supercapacitors have a high potential for use in energy storage systems requiring long service life with high capacity retention ratio. In this way, the use of 2D material-based energy storage systems in critical applications such as smartphones and unmanned aerial vehicles will become widespread more rapidly.

[0028] Within these basic concepts; it is possible to develop various embodiments of the inventive “A Method (100) for Obtaining a Supercapacitor and The Supercapacitor Obtained by the Method (100)”; the invention cannot be limited to examples disclosed herein and it is essentially according to claims.

Claims

CLAIMS1. A method (100) used for obtaining supercapacitors with high capacity retention ratio; characterized by the steps of: growing the M02B structure s ( 101 ) ; growth of the M02B structure on a copper electrode (substrate) (102); and obtaining the supercapacitor with the use of electrodes (103).

2. A method (100) according to Claim 1; characterized in that in the step of growing the M02B structures (101), molybdenum trioxide (MoO ), diboron trioxide (B2O3) and boron (B) chemical powders are physically mixed at the ratios2 MoO3 + 3 B2O3 + 3 B + 6 H2= 2 M02B + 6 H2O . (1) in equation (1) and this mixture is vaporized in the range of 850-1100°C.

3. A method (100) according to Claim 1 or 2; characterized in that in the step of growth of the M02B structure on a copper electrode (substrate) (102), the M02B structure obtained by equation (1) grows in the crystalline phase on the substrate, which is a copper (Cu) electrode, by chemical vapor deposition reaction in a chemical vapor deposition system.

4. A method (100) according to any one of the preceding claims; characterized in that in the step of obtaining the supercapacitor with the use of electrodes (103), the surfaces with M02B of the copper electrodes on which M02B is deposited are positioned in such a way as to face each other and a membrane is placed between them.

5. A supercapacitor which is obtained by following the steps of method (100) and has a high capacity retention ratio and is characterized by its use in energystorage systems requiring long service life such as electric vehicles, smartphones and unmanned aerial vehicles.

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