Substrate processing device and method, semiconductor device manufacturing method and heating unit

Abstract

A substrate processing device capable of shortening the temperature stabilization time in a processing furnace. The substrate processing device comprises: a substrate holder for holding a plurality of substrates; a heat insulating portion provided below the substrate holder; a processing chamber for receiving the substrate holder and processing the substrate; a first heating portion provided around the processing chamber and heating the processing chamber from the side; a second heating portion located in the processing chamber and provided between the substrate holder and the heat insulating portion, the second heating portion comprising: a substantially annular heating portion; and a hanging portion extending downward from the heating portion, the heating portion being contained in an annular region having a diameter smaller than that of the substrate.

Description

[0001] This invention application is a divisional application of the invention application with application number 201610084003.7, application date February 6, 2016, and invention name “Substrate processing device, semiconductor device manufacturing method and heating unit”. Technical Field

[0002] The present invention relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a heating unit. Background Art

[0003] As a substrate processing apparatus, there is a batch type substrate processing apparatus that processes a predetermined number of substrates at a time. In the batch type substrate processing apparatus, a predetermined number of substrates are held on a substrate holder, and the substrate holder is moved into a processing chamber, and a processing gas is introduced into the processing chamber in a state where the substrates are heated to perform the required processing.

[0004] In the past, the substrate in the processing chamber was heated from the side by a heater arranged around the processing chamber. However, the center of the substrate at the bottom of the processing chamber is difficult to heat or the temperature is easily reduced. Therefore, in the conventional substrate processing device, it takes time to heat up the processing chamber, resulting in a long recovery time (temperature stabilization time).

[0005] Prior Art Literature

[0006] Patent Document 1: Japanese Patent No. 3598032 Summary of the invention

[0007] An object of the present invention is to provide a technology capable of shortening the temperature stabilization time in a processing chamber.

[0008] According to the present invention, there is provided a substrate processing device, which comprises: a substrate holder for holding a plurality of substrates; an insulating portion disposed below the substrate holder; a processing chamber for accommodating the substrate holder and processing the substrates; a first heating portion disposed around the processing chamber and heating the processing chamber from the side; and a second heating portion located in the processing chamber and disposed between the substrate holder and the insulating portion, the second heating portion comprising: a roughly annular heating portion; and a hanging portion extending downward from the heating portion, the heating portion being contained within an annular region having a diameter smaller than that of the substrate.

[0009] Effects of the Invention

[0010] According to the present invention, there is an advantageous effect that the temperature stabilization time in the processing chamber can be shortened. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1It is a side sectional view of a processing furnace of the substrate processing apparatus to which the first embodiment of the present invention is applied.

[0012] Figure 2 It is a diagram schematically showing the structure of a control system of the substrate processing apparatus according to the present invention.

[0013] Figure 3 (A) is a diagram showing the simulation result of the temperature distribution when the entire bottom region is heated at the same temperature. Figure 3 (B) is a diagram showing the simulation result of the temperature distribution when the entire bottom region is heated at the same output.

[0014] Figure 4 This is a diagram showing the simulation results of the temperature distribution when the bottom region of the substantially middle portion of the radius of the substrate is heated by the cap-shaped heater according to the first embodiment of the present invention.

[0015] Figure 5 1 is a comparative graph showing the in-plane temperature distribution of the bottommost substrate when the diameter of the cap-shaped heater is changed to be different. The circle indicates the position where the cap-shaped heater 34 is provided.

[0016] Figure 6 This is a comparison graph showing the maximum temperature difference of the in-plane temperature of the bottommost substrate when the diameters of the cap-shaped heaters are varied.

[0017] Figure 7 It is a top view showing the cap-shaped heater and its surrounding parts.

[0018] Figure 8 It is an enlarged side cross-sectional view of a main part showing a bottom area of ​​the substrate processing apparatus.

[0019] Fig. 9 It is an enlarged side cross-sectional view of a main part showing a bottom area of ​​the substrate processing apparatus.

[0020] Fig.10 It is a perspective view showing the cap-shaped heater according to the first embodiment.

[0021] Fig.11 It is a top view showing the cap-shaped heater of the first embodiment.

[0022] Fig.12 It is a side view showing the cap-shaped heater of the first embodiment.

[0023] Fig.13 It is a front view showing the cap-shaped heater of the first embodiment.

[0024] Fig.14 It is a top view of a cap-shaped heater and its surrounding parts showing a modified example of the first embodiment of the present invention.

[0025] Fig.15 FIG. 1 is a plan view showing a cap-shaped heater and its surrounding parts according to a second embodiment of the present invention.

[0026] Fig.16 It is a top view of a cap-shaped heater and its surrounding parts showing a modified example of the second embodiment of the present invention.

[0027] Fig.17 It is a top view showing a cap-shaped heater according to a third embodiment of the present invention.

[0028] Fig.18 It is a longitudinal sectional view showing a cap-shaped heater according to a third embodiment of the present invention.

[0029] Fig.19 This is a schematic diagram showing the structure of a substrate processing apparatus applied to the first embodiment of the present invention.

[0030] Description of Reference Numerals

[0031] 2 Side heaters

[0032] 6. Processing Chamber

[0033] 7 boat pillars

[0034] 31 Insulation

[0035] 34 Cap Heater

[0036] 38 Temperature Control Unit

[0037] 51, 66 heating part

[0038] 53 drooping part

[0039] 61. Resistance heating element DETAILED DESCRIPTION

[0040] Below, while referring to the attached Figure 1 Embodiments of the present invention will be described below.

[0041] like Figure 1 As shown, the processing furnace 1 has a cylindrical side heater 2 as a first heating portion. Inside the side heater 2, a reaction tube 5 is arranged concentrically with the side heater 2. The reaction tube 5 is made of a heat-resistant material such as quartz (SiO2) and has a cylindrical shape with a closed upper end and an open lower end.

[0042] The reaction tube 5 divides the processing chamber 6 into an inner part, and a boat column 7 as a substrate holder is stored in the processing chamber 6. The boat column 7 is configured to hold wafers 8 as substrates in a horizontal state arranged in multiple stages in the vertical direction. The boat column 7 is made of, for example, quartz or silicon carbide.

[0043] In this embodiment, Fig.19 As shown, the processing chamber 6 is divided into four areas, namely, area 1, area 2, area 3, and area 4, from the top. The side heater 2 is divided into the first to fourth heaters in a manner corresponding to each area. The first heater 2A is provided around the area 1, the second heater 2B is provided around the area 2, the third heater 2C is provided around the area 3, and the fourth heater 2D is provided around the upper part of the area 4. In the processing chamber 6, the boat column 7 is stored in the range of areas 1 to 3, and the insulation part 31 described later is stored in the area 4. Since the area (product area) where the boat column 7 is stored is heated by the first to third heaters, the first to third heaters can also be collectively referred to as the upper heater for heating the product area. In addition, since the area (insulation area) where the insulation part 31 is stored is heated by the fourth heater 2D, the fourth heater 2D can also be referred to as the lower heater for heating the insulation area.

[0044] like Figure 1 As shown, at the lower end of the reaction tube 5, a gas introduction portion 9 is provided penetrating the reaction tube 5. The gas introduction portion 9 is connected to a nozzle 12 as a gas introduction pipe vertically provided along the inner wall of the reaction tube 5. A plurality of gas introduction holes 16 are provided on the side of the nozzle 12 in a direction facing the wafer 8, and the processing gas is introduced into the processing chamber 6 from the gas introduction holes 16.

[0045] On the upstream side of the gas introduction part 9, a raw material gas supply source, a carrier gas supply source, a reaction gas supply source, and an inert gas supply source (not shown) are connected via an MFC (mass flow controller) 14 as a gas flow controller. A gas flow control unit 15 is electrically connected to the MFC 14, and controls the flow rate of the supplied gas to a desired amount for a desired time.

[0046] An exhaust section 17 for exhausting the air in the processing chamber 6 is provided at a position different from the gas introduction section 9 at the lower end of the reaction tube 5, and an exhaust pipe 18 is connected to the exhaust section 17. The exhaust pipe 18 is provided with a pressure sensor 19 as a pressure detector (pressure detection section) for detecting the pressure in the processing chamber 6, and a vacuum pump 22 as a vacuum exhaust device is connected via an APC (Auto Pressure Controller) valve 21 as a pressure regulator (pressure regulating section).

[0047] The APC valve 21 and the pressure sensor 19 are electrically connected to a pressure control unit 23 which is configured to control the APC valve 21 at a desired time so that the pressure of the processing chamber 6 reaches a desired pressure through the APC valve 21 based on the pressure detected by the pressure sensor 19 .

[0048] The lower end of the reaction tube 5 is provided with: a base 24 as a retaining body capable of sealing the lower end opening of the reaction tube 5 in an airtight manner; and a sealing cap 25 as a furnace port cover. The sealing cap 25 is formed of, for example, a metal such as stainless steel. The base 24 formed in a disc shape is formed of, for example, quartz, and is installed in a manner overlapping with the sealing cap 25. An O-ring 26 as a sealing member abutting against the lower end of the reaction tube 5 is provided on the upper surface of the base 24. A rotating mechanism 27 for rotating the boat column 7 is provided on the lower side of the sealing cap 25. A bottom plate 29 of the boat column 7 is fixed to the upper end of the rotating shaft 28 of the rotating mechanism 27.

[0049] A heat insulating portion 31 is provided below the boat column 7. The heat insulating portion 31 is a structure in which a bottom plate 32 is sandwiched between quartz pressing plates 33, and the bottom plate 32 is constrained between the pressing plates 33, thereby preventing the heat insulating portion 31 from falling. The heat insulating portion 31 is formed in a cylindrical shape made of a heat-resistant material such as quartz or silicon carbide.

[0050] Inside the heat insulating portion 31, a heat insulating plate (not shown) made of a heat resistant material such as quartz or silicon carbide is stacked. The internal heat insulating plate may also be referred to as the heat insulating portion 31. The fourth heater is configured to heat the upper portion of the heat insulating portion 31. With such a configuration, the upper portion of the heat insulating portion 31 can be heated, thereby ensuring the temperature controllability of the bottom area. On the other hand, the lower portion of the heat insulating portion 31 is not directly heated. Thus, the heat from the side heater 2 and the cap-shaped heater 34 is insulated by the heat insulating portion 31, thereby making it difficult for the heat to be transmitted to the furnace mouth portion at the lower end side of the reaction tube 5.

[0051] A hole 30 is formed in the center of the heat insulating portion 31 to penetrate the entire length in the vertical direction. The rotating shaft 28 is inserted into the hole 30, and the rotating shaft 28 penetrates the sealing cap 25 and the base 24 and is connected to the boat column 7. The boat column 7 is rotated independently of the heat insulating portion 31 by the rotation of the rotating shaft 28.

[0052] The sealing cap 25 is configured to be vertically elevated by a boat column elevator 35 as an elevation mechanism vertically provided outside the reaction tube 5 , thereby enabling the boat column 7 to be carried in and out of the processing chamber 6 .

[0053] In the space between the boat column 7 and the heat insulating portion 31, a cap-shaped heater 34 as a second heating portion having a heat generating portion 51 described later is provided. The cap-shaped heater 34 is provided in such a manner that the heat generating portion 51 is at least located at a height above the height position of the boundary between the third heater and the fourth heater. In other words, the cap-shaped heater 34 is provided in such a manner that the heat generating portion 51 is at least located at a height above the height position of the boundary between the product area and the heat insulating area. By providing the cap-shaped heater 34 at such a position, the lower portion of the product area (the bottom area of ​​the boat column 7 where the bottom wafer is placed) can be effectively heated.

[0054] The cap-shaped heater 34 is a structure in which, for example, a resistance heating element is hermetically sealed in a quartz tube serving as a protective tube. The heating portion 51 of the cap-shaped heater 34 is formed into a roughly ring shape when viewed from above. With such a structure, in the bottom area, for example, the radial direction of the bottom wafer 8 can be heated in a ring shape. That is, a radial portion of the bottom wafer 8 can be heated emphatically. In other words, the area outside the center area can be heated without heating the center area of ​​the bottom wafer 8. In addition, since the cap-shaped heater 34 only needs to have the strength to withstand the pressure when the processing chamber 6 is depressurized, the thickness of the protective tube can be reduced, and the longitudinal thickness can be reduced.

[0055] A first temperature sensor 37 as a first temperature detector is provided between the side heater 2 and the reaction tube 5. In addition, a second temperature sensor 39 as a second temperature detector is provided in a manner in contact with the surface of the protection tube of the cap heater 34. Here, a second temperature sensor 39 is provided in a manner in contact with the upper surface of the protection tube (see Figure 7 ) The second temperature sensor 39 has a structure in which a temperature detector such as a thermocouple is housed in a protective tube.

[0056] The temperature control unit 38 is configured to adjust the power supply state to the side heater 2 based on the temperature information detected by the first temperature sensor 37, and to adjust the power supply state to the cap heater 34 based on the temperature information detected by the second temperature sensor 39, thereby controlling the side heater 2 and the cap heater 34 for a desired time in such a manner that the temperature in the processing chamber 6 reaches a desired temperature distribution. The gas flow control unit 15, the pressure control unit 23, the drive control unit 36, and the temperature control unit 38 are electrically connected to a control device 42 as a main control unit that controls the entire substrate processing apparatus.

[0057] like Figure 2As shown, the control device 42 as a control unit (control mechanism) is configured as a computer, and the computer has a CPU (Central Processing Unit; central processing unit) 43, RAM (Random Access Memory; random access memory) 44, a storage device 45, and an I / O port 46. The RAM 44, the storage device 45, and the I / O port 46 are configured so as to be able to exchange data with the CPU 43 via an internal bus 47. The control device 42 is connected to an input / output device 48 composed of, for example, a touch panel.

[0058] The storage device 45 is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing device, or a process recipe recording the substrate processing steps or conditions described later, etc., are stored in the storage device 45 in a readable manner. The process recipe is a combination of the steps in the substrate processing described later so that the control device 42 can execute and obtain a predetermined result, and it functions as a program.

[0059] Hereinafter, the process recipe or control program, etc. may be collectively referred to as a process recipe or a control program, etc., or may be simply referred to as a program. In this specification, when the word "program" is used, there are cases where only the recipe is included, only the control program is included, and both (the recipe and the control program) are included. RAM 44 is configured as a storage area (work area) for temporarily storing programs or data read by CPU 43.

[0060] The I / O port 46 is connected to the gas flow control unit 15, the pressure control unit 23, the drive control unit 36, and the temperature control unit 38. The CPU 43 is configured to read the control program from the storage device 45 and execute it, and read the recipe from the storage device 45 according to the input of the operation command from the input / output device 48. The CPU 43 is also configured to control the flow adjustment action of various gases based on the gas flow control unit 15, the pressure adjustment action based on the pressure control unit 23, the start and stop of the exhaust device 22, the temperature adjustment action of the side heater 2 and the cap heater 34 based on the temperature control unit 38, the rotation and rotation speed adjustment action of the boat column 7 based on the drive control unit 36, and the lifting action, etc. according to the content of the read recipe.

[0061] The control device 42 can be configured by installing the above-mentioned program stored in an external storage device (e.g., a magnetic disk such as a magnetic tape, a floppy disk or a hard disk, an optical disk such as a CD or a DVD, an optical disk such as an MO, a semiconductor memory such as a USB memory or a memory card) 49 into a computer. The storage device 45 or the external storage device 49 is configured as a computer-readable storage medium. Hereinafter, these devices are collectively referred to as storage media. When the term storage medium is used in this specification, there are cases where only the storage device 45 is included, only the external storage device 49 is included, and both of them are included. In addition, instead of using the external storage device 49, a communication mechanism such as a network or a dedicated line can be used to provide the program to the computer.

[0062] Next, a method for performing substrate processing (hereinafter referred to as film forming processing) as one of the manufacturing processes of semiconductor devices using the processing furnace 1 having the above-mentioned structure is described, in which the substrate processing oxidizes, diffuses, or forms a film on the wafer 8. Here, an example is described in which a first processing gas (raw material gas) and a second processing gas (reaction gas) are alternately supplied to the wafer 8 to form a film on the wafer 8. In the following description, the operation of each part constituting the substrate processing device is controlled by the control device 42.

[0063] When a predetermined number of wafers 8 are loaded into the boat column 7 (wafer loading), the boat column 7 is loaded into the processing chamber 6 by the boat column elevator 35 (boat loading). In this state, the sealing cap 25 is in a state of hermetically sealing the lower end opening (furnace mouth) of the reaction tube 5 via the base 24 and the O-ring 26. At this time, the cap-shaped heater 34 can also be heated and maintained at a predetermined temperature (the first temperature). In this case, the first temperature is set to a temperature lower than the temperature of the side heater 2 (at least the temperature of the fourth heater).

[0064] The exhaust device 22 performs vacuum exhaust (decompression exhaust) to achieve a desired pressure in the processing chamber 6. At this time, the pressure of the processing chamber 6 is measured by the pressure sensor 19, and the APC valve 21 is feedback-controlled based on the measured pressure.

[0065] In addition, the side heater 2 and the cap heater 34 heat the wafer 8 in the processing chamber 6 to a desired temperature. At this time, the power supply state to the side heater 2 is feedback-controlled based on the temperature information detected by the first temperature sensor 37, and the power supply state to the cap heater 34 is feedback-controlled based on the temperature information detected by the second temperature sensor 39, so that the processing chamber 6 reaches a desired temperature distribution. At this time, the set temperature of the cap heater 34 is set to a temperature lower than the temperature of the side heater 2 (at least the temperature of the fourth heater). Here, when the wafer 8 in the bottom area of ​​the processing chamber 6 reaches the desired temperature, the heating by the cap heater 34 may be stopped.

[0066] Next, the boat column 7 is rotated by the rotating mechanism 27 through the bottom plate 29, thereby rotating the wafer 8 being processed. At this time, since the rotating shaft 28 is inserted into the hole 30, only the boat column 7 rotates relative to the heat insulating portion 31. By rotating the boat column 7, even the substantially annular cap-shaped heater 34 can uniformly heat the annular region of the bottom region.

[0067] (Raw material gas supply process)

[0068] Next, the raw material gas is supplied from the raw material gas supply source into the processing chamber 6 . The raw material gas is controlled to a desired flow rate by the MFC 14 , flows from the gas introduction part 9 to the nozzle 12 , and is introduced into the processing chamber 6 from the gas introduction hole 16 .

[0069] (Raw material gas exhaust process)

[0070] When the preset raw material gas supply time has passed, the raw material gas supply to the processing chamber 6 is stopped, and the processing chamber 6 is evacuated by the exhaust device 22. At this time, an inert gas may be supplied to the processing chamber 6 from an inert gas supply source (inert gas cleaning).

[0071] (Reaction Gas Supplying Step)

[0072] When the preset exhaust time has elapsed, the reaction gas is then supplied from the reaction gas supply source. The gas controlled to a desired flow rate by the MFC 14 flows from the gas introduction unit 9 to the nozzle 12 , and is introduced into the processing chamber 6 through the gas introduction hole 16 .

[0073] (Reaction gas exhaust process)

[0074] When the preset processing time has elapsed, the supply of the reaction gas into the processing chamber 6 is stopped, and the processing chamber 6 is evacuated by the exhaust device 22. At this time, an inert gas may be supplied into the processing chamber 6 from an inert gas supply source (inert gas purge).

[0075] The above four steps are performed asynchronously to form one cycle, and this cycle is performed a predetermined number of times (n times), thereby forming a film of a predetermined composition and a predetermined film thickness on the wafer 8. Preferably, the above cycle is repeated a plurality of times.

[0076] After forming a film of a predetermined film thickness, an inert gas is supplied from an inert gas supply source to replace the inside of the processing chamber 6 with the inert gas, and the pressure of the processing chamber 6 is restored to normal pressure. Thereafter, the sealing cap 25 is lowered by the boat column elevator 35 to open the furnace port, and the processed wafer 8 is moved out of the reaction tube 5 while being held on the boat column 7 (unloading the boat column). Thereafter, the processed wafer 8 is taken out of the boat column 7 (wafer removal). At this time, the heating by the cap-shaped heater 34 is stopped.

[0077] Furthermore, as an example, as processing conditions when an oxide film is formed on the wafer 8 by the processing furnace 1 of the present embodiment, when DCS (SiH2Cl2: dichlorosilane) gas is used as the raw material gas, O2 (oxygen) gas is used as the reaction gas, and N2 (nitrogen) gas is used as the inert gas, for example, the following processing conditions are exemplified:

[0078] Processing temperature (wafer temperature): 300℃~700℃,

[0079] Processing pressure (sub-pressure in the processing chamber) 1Pa~4000Pa,

[0080] DCS gas: 100 sccm~10000 sccm,

[0081] O2 gas: 100 sccm~10000 sccm,

[0082] N2 gas: 100 sccm~10000 sccm,

[0083] By setting each processing condition to a value within each range, the film forming process can be appropriately performed.

[0084] Next, the relationship between the heating position in the radial direction of the cap-shaped heater 34 and the temperature distribution in the lower part (bottom region) of the processing chamber 6 when the diameter of the wafer 8 is set to 300 mm, for example, will be described.

[0085] Figure 3 (A) Figure 3(B) shows the simulation result of the temperature distribution when the entire bottom region is heated (conventional example). As the case where the entire bottom region is heated, a simulation is performed in a structure where a plurality of, for example, three, cap-shaped heaters 34 are provided in a concentric multiple configuration.

[0086] also, Figure 4 The simulation result of the temperature distribution after a part of the bottom area is heated in an annular shape (the present invention) is shown. Figure 4 , as an example, the temperature distribution is shown when the heating position is set to a position 70 mm from the center of the processing chamber 6, that is, the diameter of the cap-shaped heater 34 is set to 140 mm.

[0087] like Figure 3 (A) Figure 3 As shown in (B), in the bottom region, in either case where the temperatures of the cap-shaped heaters 34a to 34c are equal (615°C) or the outputs of the cap-shaped heaters 34a to 34c are equal (12W), a temperature distribution is generated in which the temperature on the outer periphery of the bottom region is high and the temperature on the center is low, and the maximum temperature difference in the surface of the wafer 8 is about 4°C. That is, in the case of a heater configured to heat the entire bottom region, a large temperature difference is generated in the surface of the wafer 8, which may deteriorate the in-plane uniformity of film formation.

[0088] In this regard, the inventors have devoted themselves to research and have obtained the following insights: when the cap-shaped heater 34 is not used to heat the entire bottom area, Figure 4 As shown, when heating is performed around the annular region as a radially part of the bottom region, the temperature difference between the outer peripheral side and the central side of the bottom region is almost eliminated, and the temperature distribution of the bottom region can be made gentle.

[0089] like Figure 5 , Figure 6 As shown in FIG. 1 , when the heating position in the radial direction of the cap-shaped heater 34 (the radius of the cap-shaped heater 34) is set to 90 mm and 110 mm from the center of the processing chamber 6, that is, when the outer peripheral side is heated compared to the middle part (75 mm) of the radius of the wafer 8a in the bottom area, the in-plane temperature difference of the wafer 8a is reduced compared to the case where the entire bottom area is heated, thereby improving. However, a temperature distribution is generated in which the temperature of the outer peripheral side of the bottom wafer 8a is high and the temperature of the center side is low (see FIG. 1 ). Figure 5 ). In addition, the maximum temperature difference within the surface of wafer 8a is still large, and the temperature within the surface is not uniform (refer to Figure 6The cause of this situation is that since there is no heat source on the center side of the wafer 8a, it is difficult to heat the center side of the wafer 8a, and the outer peripheral side of the wafer 8a is doubly heated by the side heater 2 and the cap heater 34.

[0090] Furthermore, even when the heating position in the radial direction by the cap-shaped heater 34 is set to 30 mm or 50 mm from the center of the processing chamber 6, that is, when the center side is heated compared to the middle part of the radius of the wafer 8a in the bottom region, compared to the case where the entire region of the bottom region is heated, although the in-plane temperature distribution of the wafer 8a is improved, a concave temperature distribution with higher temperatures on the outer peripheral side and the center side is still generated in the surface of the bottom wafer 8a. In this case, the maximum temperature difference in the surface of the wafer 8a is still large, and the in-plane temperature is not uniform. The cause of this situation can be considered to be that the cap-shaped heater 34 is too close to the center side, and thus the heating near the middle part of the radius direction of the wafer 8a is insufficient.

[0091] On the other hand, when the heating position based on the cap-shaped heater 34 is set to be greater than 60 mm and less than 77.5 mm from the center of the processing chamber 6, that is, when heating is performed near the approximately middle part of the radial direction of the bottom wafer 8a, there is almost no temperature difference between the outer peripheral side and the center side of the bottom wafer 8a, resulting in a smooth temperature distribution.

[0092] Furthermore, the temperature difference in the surface of the wafer 8a is also about 0.6°C, and the temperature uniformity in the surface is improved. In addition, the maximum temperature difference in the surface of the wafer 8a is minimized and the temperature uniformity in the surface is improved when, for example, the heating position in the radial direction based on the cap-shaped heater 34 is set to 77.5 mm from the center of the processing chamber 6 (the center of the wafer 8a), that is, the diameter of the cap-shaped heater 34 is set to 155 mm to heat the bottom area.

[0093] In addition, compared with the case where the entire bottom region is heated, the in-plane temperature distribution is improved when the diameter of the cap-shaped heater 34 is within the annular region of 60 mm to 180 mm. That is, the in-plane temperature distribution can be improved by intensively heating the annular region of 60 mm to 180 mm in diameter in the bottom region with the center of the wafer 8a in the bottom region as the center point. When the diameter of the cap-shaped heater 34 is within the range of a circular region smaller than 60 mm, or when it is larger than 180 mm, the in-plane temperature difference becomes about 2.5°C, the in-plane temperature distribution deteriorates, and the in-plane uniformity of the film formation is impaired.

[0094] Moreover, by setting the diameter of the cap-shaped heater 34 to be greater than 90 mm and less than 160 mm, the temperature difference within the surface of the wafer 8a can be made smaller than 2°C, and further improvement in temperature distribution can be seen. That is, by heating the annular region with a diameter of 90 mm to 160 mm at the bottom region, the temperature distribution can be further improved. In addition, in order to further improve the in-plane uniformity in substrate processing, it is preferred to set the temperature difference within the surface of the wafer 8a to within 0.6°C, and it is preferred to set the diameter of the cap-shaped heater 34 to be greater than 120 mm and less than 155 mm. That is, in order to actively heat the annular region with a diameter of 120 mm to 155 mm at the bottom region, it is preferred to keep the diameter of the cap-shaped heater 34 within the annular region of 120 mm to 155 mm.

[0095] In the above, although the diameter of the wafer is set to 300 mm, for example, the diameter of the wafer is not limited to 300 mm, and the same effect can be obtained even if it is set to 150 mm, 200 mm, and 450 mm. That is, when the range of more than 1 / 5 and less than 3 / 5 of the bottom area is actively heated relative to the diameter of the wafer, the improvement of the in-plane temperature distribution can be seen. That is, when the diameter of the cap-shaped heater 34 is contained in the annular region of more than 1 / 5 and less than 3 / 5 of the diameter of the wafer, the improvement of the in-plane temperature distribution can be seen. Preferably, when the range of more than 3 / 10 and less than 8 / 15 of the bottom area is actively heated, the in-plane temperature distribution can be further improved. That is, when the diameter of the cap-shaped heater 34 is contained in the annular region of more than 3 / 10 and less than 8 / 15 of the diameter of the wafer, the in-plane temperature distribution can be further improved. More preferably, when the range of 2 / 5 or more and 31 / 60 or less of the bottom region is actively heated, the in-plane temperature distribution can be further improved, thereby improving the uniformity of substrate processing. That is, when the diameter of the cap-shaped heater 34 is within the annular region of 2 / 5 or more and 31 / 60 or less, the in-plane temperature distribution can be further improved, thereby improving the in-plane uniformity of substrate processing.

[0096] As described above, in the process of moving the radial heating position based on the cap-shaped heater 34 from the peripheral side to the center side of the bottom area, that is, between the temperature distribution in which the in-surface temperature of the bottom wafer 8a is high on the peripheral side and low on the center side, and the concave temperature distribution in which the in-surface temperature of the bottom wafer 8a is high on the peripheral side and the center side and low between the two, a temperature distribution in which the in-surface temperature of the bottom wafer 8a has almost no temperature difference between the peripheral side and the center side.

[0097] Although there may be differences depending on the device, etc., there is a position where the in-plane temperature distribution of the bottom wafer 8a becomes uniform when the heating position in the radial direction is changed from the outer peripheral side to the center side. Therefore, the heating position where the in-plane temperature distribution of the bottom wafer 8a becomes uniform is obtained through experiments, etc., and the diameter of the cap-shaped heater 34 that can heat the obtained heating position is obtained, thereby improving the uniformity of substrate processing.

[0098] Next, in Figure 7 to Figure 13 An example of the cap-shaped heater 34 in the first embodiment is described in FIG. Figure 7 As shown in FIG. 1 , the upper end of the cap-shaped heater 34 has: a substantially annular heating portion 51; and a V-shaped reinforcement portion 52 protruding from both ends of the heating portion 51 toward the outer circumference. Here, the heating portion 51 is annular in shape with a portion thereof opened, in other words, formed in an arc shape (horseshoe shape). Figure 8 As shown, the cap-shaped heater 34 has a hanging portion 53 that is bent at the base portion (outer peripheral end portion) of the reinforcing portion 52 and extends vertically downward.

[0099] A first cutout 54 is formed over the entire length in the vertical direction on the circumferential surface of the heat insulating portion 31. The hanging portion 53 is inserted into the first cutout 54 to prevent or substantially prevent the hanging portion 53 from protruding from the circumferential surface of the heat insulating portion 31. In addition, the hanging portion 53 airtightly penetrates the base 24 and the sealing cap 25, and is connected to a power supply portion not shown, and the penetration portion of the hanging portion 53 is sealed by a predetermined sealing member such as a vacuum joint.

[0100] The position where the first cutout 54 is formed, that is, the position where the reinforcement 52 is formed, is located above the gas exhaust portion 17 , and the reinforcement 52 and the surface directions of the gas exhaust portion 17 are aligned or substantially aligned.

[0101] A plurality of spacers 55 are provided on the upper surface of the heat insulating portion 31 at predetermined angular intervals between the spacers 55 and the heat generating portion 51, and gaps are formed between the spacers 55 and the heat generating portion 51. The spacers 55 are formed of a heat insulating member such as quartz, and prevent the heat generating portion 51 from directly contacting the heat insulating portion 31 when the cap-shaped heater 34 is deformed due to deterioration over time.

[0102] In addition, the second temperature sensor 39 such as a thermocouple is arranged in such a manner that the front end portion contacts the upper surface of the heating portion 51. The position of the front end portion of the second temperature sensor 39 is fixed by a support portion 56 provided on the heating portion 51 as a temperature measuring component support portion. The support portion 56 is provided at a position displaced 90° from the base portion of the reinforcement portion 52 and further displaced by a predetermined angle, for example, 5°, so that the contact length (contact area) between the heating portion 51 and the second temperature sensor 39 becomes larger. In addition, the relationship between the second temperature sensor 39 and the heating portion 51 is such that the center line of the second temperature sensor 39 becomes a tangent or a substantially tangent to the virtual circle (center circle) formed by the center line of the heating portion 51 when viewed from above.

[0103] The base end side of the second temperature sensor 39 extends toward the peripheral edge of the heat insulating portion 31, and is bent vertically downward at the peripheral edge of the heat insulating portion 31. The bent portion is inserted into the second cutout portion 57 formed on the peripheral surface of the heat insulating portion 31 over the entire length in the vertical direction, and the bent portion airtightly penetrates the base 24 and the sealing cap 25 via a predetermined sealing member such as a vacuum joint, and is electrically connected to the temperature control portion 38.

[0104] The second temperature sensor 39 is also inserted into the second cutout portion 57 similarly to the hanging portion 53 of the cap-shaped heater 34 , and thus does not protrude from the peripheral surface of the heat insulating portion 31 .

[0105] Next, in Figure 10 to Figure 13 The cap-shaped heater 34 is described in detail in FIG. The V-shaped top angle of the reinforcing portion 52 is, for example, 60°. Fig.10 As shown, when the distance between the boundary of the heat-generating part 51 and the reinforcing part 52 (the length of the bottom side of the V-shape) is set to D1, in the moment M1 in the tangential direction relative to the peripheral surface of the heat-insulating part 31, the force applied to the boundary between the heat-generating part 51 and the reinforcing part 52 is reduced by the reaction force generated by the distance D1. In addition, when the protruding distance of the reinforcing part 52 from the heat-generating part 51 (the distance from the center circle of the heat-generating part 51 to the apex of the V-shape) is set to D2, in the moment M2 in the direction away from the heat-insulating part 31 (the moment in the radial direction), the force applied to the boundary between the heat-generating part 51 and the reinforcing part 52 is reduced by the reaction force generated by the distance D2.

[0106] The cap-shaped heater 34 has a quartz protection member 58 as a frame with a circular cross section and a lead 59 inserted into the protection member 58. The lead 59 is, for example, a single-coil lead made of nickel. The lead 59 forms a heating element, for example, a coil-shaped resistance heating element 61 in the heating portion 51, with the boundary between the heating portion 51 and the reinforcing portion 52 as a heating point. When electricity is supplied to the resistance heating element 61, the cap-shaped heater 34 generates heat.

[0107] The wires 59 inserted into the heat generating part 51 are joined in the reinforcing part 52 and are suspended in the suspended part 53 in a bundled state. Furthermore, the wires 59 are respectively provided with protective glasses 62 as insulating members in the reinforcing part 52 and are insulated from each other by the protective glasses 62.

[0108] The protective glass 62 is composed of, for example, a plurality of connected cylindrical ceramic glasses, and the insulation between the bundled wires 59 is ensured by inserting the wires 59 into the ceramic glass and narrowing the intervals between the connected ceramic glasses.

[0109] In the hanging portion 53, only one of the bundled wires 59 is inserted into the protective glass 62. Alternatively, if the diameter of the hanging portion 53 can be sufficiently ensured, both of the bundled wires 59 may be inserted into the protective glass 62.

[0110] The lower end of the hanging portion 53 is sealed in an airtight and electrically insulating state by a cap 63 formed of an insulating member such as silicon. That is, the resistance heating element 61 is airtightly sealed in the protective member 58 in an electrically insulating state. In addition, the lead wire 59 extends from the lower end of the hanging portion 53 in a state covered by an insulating member such as Teflon (registered trademark) and is connected to a power supply unit not shown.

[0111] As described above, in this embodiment, one or more of the following effects can be obtained.

[0112] (a) Since the heating portion of the cap-shaped heater is formed into an arc shape (horseshoe shape) smaller than the diameter of the wafer, and the protective component of the cap-shaped heater is formed into a quartz plate with a small plate thickness, it is easy to heat up and cool down the cap-shaped heater, and the recovery time is shortened, thereby improving production capacity.

[0113] (b) Since the diameter of the cap-shaped heater is smaller than that of the wafer, the flow of gas from the gas introduction hole to the gas exhaust portion is not hindered, and the gas can be uniformly supplied to the surface of the wafer, thereby improving the in-plane uniformity of the wafer.

[0114] (c) Since the annular area on the center side is actively heated by the cap-shaped heater compared with the peripheral portion of the bottom wafer, the peripheral portion of the bottom wafer can be prevented from being doubly heated by the side heater and the cap-shaped heater, and the bottom area where the temperature is easily lowered can be effectively and uniformly heated, thereby improving the temperature uniformity within the wafer surface.

[0115] (d) Since the cap-shaped heater has a V-shaped reinforcement portion protruding from the heat generating portion toward the outer peripheral side, and the base of the reinforcement portion is bent downward to form a hanging portion, the strength of the cap-shaped heater can be ensured without providing a separate reinforcement component, thereby reducing the number of components.

[0116] (e) Since the reinforcement portion is located above the gas exhaust portion, even if turbulence is generated in the gas due to the V-shaped reinforcement portion, the turbulence can be quickly discharged, and the generation of turbulence can be suppressed, so that the gas can be uniformly supplied to the wafer and the in-plane uniformity can be improved.

[0117] (f) Since the hanging portion is inserted into the first cutout formed over the entire length of the heat insulating portion in the vertical direction, the hanging portion does not protrude from the peripheral surface of the heat insulating portion, thereby preventing the hanging portion from obstructing the flow of gas.

[0118] (g) Since only one of the bundled wires is inserted into the protective glass in the hanging portion, the inner diameter of the hanging portion can be reduced, thereby achieving space saving of the cap-shaped heater.

[0119] (h) Since the cap heater is fixedly installed and the boat column rotates independently of the cap heater, it is possible to suppress uneven heating of the wafer when the cap heater is used, and thus the wafer can be heated uniformly.

[0120] (i) Since the spacer is provided on the upper surface of the heat insulating portion, the cap-shaped heater will not directly contact the heat insulating portion when it sags due to thermal deformation, and heat will not be lost to the heat insulating portion, thereby improving the durability of the cap-shaped heater.

[0121] (j) Since the second temperature sensor is arranged in a manner that allows it to contact the upper surface of the heat generating portion of the cap-shaped heater and can measure the temperature of the cap-shaped heater from the side of the wafer serving as the heated object, the measurement accuracy of the temperature of the cap-shaped heater can be improved, and the heating controllability can be improved, thereby improving the in-plane uniformity of the wafer.

[0122] (k) Since the second temperature sensor is fixed by the supporting portion, and the supporting portion is arranged at a position further displaced by a specified angle from a position displaced by 90° from the base portion of the reinforcing portion, the contact area between the second temperature sensor and the heating portion becomes larger, and the quartz tube protecting the thermocouple can be heated in a short time, thereby reducing the measurement error and making it easy to align the second temperature sensor.

[0123] (l) By setting the heating position based on the cap-shaped heater at the middle or near the middle of the wafer radius, the temperature difference between the peripheral side and the center side in the bottom area in the processing chamber is reduced, and the bottom area can be effectively and uniformly heated, thereby further improving the in-plane uniformity of the wafer temperature.

[0124] (m) Since the cap-shaped heater heats the lower portion of the processing chamber where the temperature is likely to drop, the heat-averaging length can be extended to the lower portion of the processing chamber, thereby reducing defective wafers. In other words, the number of processed product wafers can be increased, thereby improving productivity.

[0125] Fig.14 A modified example of the first embodiment is shown. In the modified example, a cap heater 34' having a smaller diameter than the cap heater 34 is provided concentrically with the cap heater 34. The cap heater 34' has the same structure as the cap heater 34, and thus its description is omitted.

[0126] In the case of the modified example, the notch depth of the first notch portion 54 is increased, and the hanging portion 53 (see Figure 8 ) and a hanging portion (not shown) of the cap-shaped heater 34′ are inserted into the first cutout portion 54, thereby enabling the hanging portion to be arranged without protruding from the peripheral surface of the heat insulating portion 31.

[0127] A plurality of cap-shaped heaters 34 are provided in the annular region, and each cap-shaped heater 34 can be independently controlled, thereby further improving the heating controllability based on the cap-shaped heater 34, more effectively heating the bottom region, and further improving the in-plane temperature uniformity of the wafer 8. Fig.14 Although only one second temperature sensor 39 is provided, by providing the second temperature sensor 39 on each cap-shaped heater 34, more precise temperature control can be performed, thereby further improving the heating controllability.

[0128] Then, in Fig.15 A second embodiment of the present invention is described in Fig.15 In, with Figure 7 The same components are marked with the same reference numerals and their descriptions are omitted.

[0129] In the second embodiment, the cap-shaped heater 34 has a double-structured heating portion 66 in which an outer circular portion 66a and an inner circular portion 66b are concentric multiple circular shapes. In addition, the cap-shaped heater 34 has an extension portion 65 which is formed by inserting the hanging portion 53 (see Figure 8 ) is bent along the upper surface of the insulation portion 31 and extends toward the center of the insulation portion 31.

[0130] The outer circular portion 66a is fixed to the extension portion 65 on the base end side by welding or the like. In addition, the outer circular portion 66a and the inner circular portion 66b are fixed by welding or the like at a position substantially opposite to the extension portion 65, that is, on the front end side. In addition, on the front end side, the outer circular portions 66a are not connected to each other and the inner circular portions 66b are not connected to each other, so that the front end of the heating portion 66 is separated. That is, the heating portion 66 has a double structure in which the outer circular portion 66a and the inner circular portion 66b are wound one circle and integrated. In addition, although not shown in the figure, as in the first embodiment, the boundary portion between the extension portion 65 and the outer circular portion 66a is used as a heating point, and a coil-shaped resistance heating element is sealed in the heating portion 66.

[0131] In the second embodiment, the heating portion 66 is formed in double. Therefore, the output of the cap-shaped heater 34 can be increased, and the processing chamber 6 can be heated more effectively (see Figure 1 ) The bottom area below. In addition, the cap heater 34 can be made of a coil of wire 59 (refer to Fig.11 ) is made, so it is only necessary to have one power supply portion for the cap-shaped heater 34 having a double heating portion 66, thereby simplifying the control system and reducing the number of components.

[0132] Fig.16 FIG. 2 shows a modified example of the second embodiment of the present invention. In the modified example, the extension portion 65 of the second embodiment is provided to be connected to the V-shaped reinforcement portion 52 of the first embodiment (see FIG. 2 ). Figure 7 )A reinforcement portion 67 of the same shape.

[0133] The base of the reinforcing portion 67 is bent downward to form a hanging portion (not shown), thereby improving the strength of the cap heater 34 in a direction along the circumference of the heat insulating portion 31 and in a direction away from the heat insulating portion 31 .

[0134] Next, in Fig.17 , Fig.18 The third embodiment of the present invention is described in the following. Figure 7 The same components are marked with the same reference numerals and their descriptions are omitted.

[0135] In the third embodiment, the hanging portion 53 is formed at the center of the heat generating portion 51 in a plan view. In addition, there is an extension portion 65 that is bent horizontally in the upper direction of the hanging portion 53 and extends from the center of the heat insulating portion 31 to the outside. The extension portion 65 is formed into a pair of I-shapes in a manner connected to both ends of the heat generating portion 51, and merges into one at the upper end of the hanging portion 53. The second temperature sensor 39 is formed in a manner that is bent horizontally from the center of the heat generating portion 51 along the upper surface of the heat insulating portion 31 in a direction opposite to the extension portion 65, and is connected to the side surface of the heat generating portion 51. Fig.19As shown, the upper end of the hanging portion 53 is joined with a pair of extensions 65 and the second temperature sensor 39, and thus has a larger diameter than the lower portion of the hanging portion 53. The second temperature sensor 39 contains a first temperature sensor 39A for detecting the temperature of the heating portion 51 and a second temperature sensor 39B for detecting the temperature near the center of the bottom region.

[0136] The heating portion 51 is formed into a roughly cardioid shape (heart shape). In other words, the heating portion 51 is formed into a shape that separates the sharp points of the cardioid shape. Similar to the first embodiment, the boundary between the extension portion 65 and the heating portion 51 is used as a heating point, and a coil-shaped resistive heating element is sealed in the heating portion 51. Preferably, the curved portion of the cardioid shape is formed into a perfect circle. The hanging portion 53 is provided in a manner that penetrates the hole 30, the sealing cap 25, and the base 24.

[0137] Since the resistive heating element is sealed to the cusp of the cardioid, the heating portion in the annular region based on the heating portion 51 can be increased, thereby improving the heating performance based on the cap-shaped heater 34. As a result, the bottom region can be heated more effectively, thereby further improving the in-plane temperature uniformity of the wafer 8. In addition, the heating portion 51 is supported by the drooping portion 53 provided at the center of the heating portion 51 when viewed from above, so it is difficult for the heating portion 51 to droop or tilt due to degradation over time. Since the cap-shaped heater 34 can be used for a long time, productivity can be improved.

[0138] In the first, second and third embodiments, coil-shaped resistance heating elements are exemplified as the heating element, but it is of course possible to use a lamp heater such as an iodine tungsten lamp as the heating element.

[0139] The present invention is not limited to the above-mentioned oxide film formation, but can also be applied to nitride film formation. For example, a nitride film can be formed by using NH 3 gas as the above-mentioned raw material gas and reaction gas.

[0140] Moreover, the present invention can be preferably applied even when forming a metal film including metal elements such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), and tungsten (W).

[0141] (Preferred embodiment of the present invention)

[0142] Preferred embodiments of the present invention are described below.

[0143] (Note 1)

[0144] According to one embodiment of the present invention, there is provided a substrate processing apparatus comprising:

[0145] a substrate holder for holding a plurality of substrates;

[0146] a heat insulating portion disposed below the substrate holder;

[0147] A reaction tube having a processing chamber inside for processing the substrate;

[0148] a first heating portion provided around the reaction tube; and

[0149] a second heating portion provided between the substrate holder and the heat insulating portion,

[0150] The second heating unit comprises:

[0151] a substantially annular heat generating portion; and

[0152] a hanging portion extending downward from the heat generating portion,

[0153] The heat generating portion is contained within an annular region having a smaller diameter than that of the substrate.

[0154] (Note 2)

[0155] In the device according to Supplementary Note 1, preferably, the annular region is greater than 1 / 5 and less than 3 / 5 of the diameter of the substrate.

[0156] (Note 3)

[0157] In the device according to Supplementary Note 1 or 2, preferably, a temperature measuring member is connected to a surface of the heat generating portion.

[0158] (Note 4)

[0159] According to any one of Supplementary Notes 1 to 3, preferably, the first heating unit has:

[0160] an upper heater for heating an upper region of the processing chamber in which the substrate holder is housed; and

[0161] a lower heater for heating a lower region of the processing chamber in which the heat insulating portion is housed,

[0162] The heat generating portion is provided at least at a height higher than a height position of a boundary between the upper heater and the lower heater.

[0163] (Note 5)

[0164] According to the device according to Supplementary Note 4, preferably, the temperature of the heat generating portion is lower than the temperature of the lower heater.

[0165] (Note 6)

[0166] According to the device according to any one of Supplementary Notes 1 to 3, preferably, the heat generating portion is formed in an arc shape (horseshoe shape).

[0167] (Note 7)

[0168] In the device according to Supplementary Note 4, preferably, the second heating portion has a V-shaped reinforcement portion protruding from the heat generating portion toward the outer peripheral side.

[0169] (Note 8)

[0170] According to the device described in Supplementary Note 3, preferably, a temperature measuring member supporting portion is provided on the heat generating portion, and the temperature measuring member supporting portion supports the temperature detector in a state where the temperature detector is in contact with an upper surface of the heat generating portion.

[0171] (Note 9)

[0172] According to the device described in Supplementary Note 8, it is preferable that the temperature measuring member support portion is provided at a position where the center line of the temperature detector becomes a tangent or a substantially tangent to a virtual circle formed by the center line of the heat generating portion.

[0173] (Note 10)

[0174] According to the device described in Supplementary Note 7, preferably, the base portion of the reinforcing portion is connected to the hanging portion, and an insulating member is mounted on only one of the pair of heating elements in the hanging portion.

[0175] (Note 11)

[0176] According to the device described in Note 8, preferably, a spacer is provided below the heat generating portion on the upper surface of the heat insulating portion, and a gap is formed between the spacer and the heat generating portion.

[0177] (Note 12)

[0178] In the device according to Supplementary Note 11, preferably, the reinforcing portion is provided above an exhaust portion of the processing chamber.

[0179] (Note 13)

[0180] In the device according to Appendix 1 or 2, it is preferred that a plurality of the second heating parts are concentrically provided.

[0181] (Note 14)

[0182] According to the device described in Note 1 or 2, preferably, the heating portion has an outer circular portion and an inner circular portion arranged in a concentric multiple circle shape, the outer circular portion is connected to the reinforcing portion at the base end side, and the outer circular portion and the inner circular portion are connected at the front end side.

[0183] (Note 15)

[0184] According to the device described in any one of Notes 1 to 14, preferably, a notch is provided on the peripheral surface of the heat insulating portion over the entire length in the up-down direction, and the hanging portion is inserted into the notch.

[0185] (Note 16)

[0186] In the device according to Supplementary Note 1 or 2, preferably, the heat generating portion is formed in a cardioid shape (heart shape).

[0187] (Note 17)

[0188] In the device according to Note 16, preferably, the hanging portion is formed at a central position of the heat generating portion in a plan view.

[0189] (Note 18)

[0190] In the device according to Supplementary Note 2, preferably, the annular region is greater than 1 / 5 and less than 3 / 5 of the diameter of the substrate.

[0191] (Note 19)

[0192] In the device according to Supplementary Note 18, preferably, the annular region is greater than or equal to 3 / 10 and less than or equal to 8 / 15 of the diameter of the substrate.

[0193] (Note 20)

[0194] According to the device according to any one of Supplementary Notes 1 to 19, preferably, the heat generating portion has a diameter of a size capable of heating at a position where the in-plane temperature distribution of the lowermost substrate becomes uniform.

[0195] (Note 21)

[0196] According to another aspect of the present invention, there is provided a substrate processing method or a semiconductor device manufacturing method, comprising:

[0197] A step of moving a substrate holder disposed above the heat insulating portion and holding a plurality of substrates into the processing chamber;

[0198] a step of heating the interior of the processing chamber by a first heating unit provided around the processing chamber and a substantially annular second heating unit provided between the substrate holder and the heat insulating unit; and

[0199] a step of supplying a processing gas into the processing chamber,

[0200] In the step of heating the interior of the processing chamber, the heat generating portion of the second heating portion formed so as to be accommodated in an annular region having a smaller diameter than that of the substrate heats a bottom region of the processing chamber.

[0201] (Note 22)

[0202] According to another aspect of the present invention, there is provided a program or a computer-readable storage medium having the program recorded thereon, which causes a computer to execute the following steps, the steps comprising:

[0203] A step of moving a substrate holder disposed above the heat insulating portion and holding a plurality of substrates into the processing chamber;

[0204] a step of heating the interior of the processing chamber by a first heating unit provided around the processing chamber and a substantially annular second heating unit provided between the substrate holder and the heat insulating unit; and

[0205] The step of supplying a processing gas into the processing chamber,

[0206] In the step of heating the processing chamber, the heat generating portion of the second heating portion formed so as to be contained in an annular region having a smaller diameter than that of the substrate heats a bottom region in the processing chamber.

[0207] (Note 23)

[0208] According to another aspect of the present invention, there is provided a heating unit provided between a substrate holder for holding a plurality of substrates and a heat insulating unit provided below the substrate holder, the heating unit comprising:

[0209] a substantially annular heat generating portion; and

[0210] a hanging portion extending downward from the heat generating portion,

[0211] The heat generating portion is configured to be contained in an annular region having a smaller diameter than the substrate.

[0212] (Note 24)

[0213] According to another aspect of the present invention, there is provided a substrate processing apparatus comprising:

[0214] a substrate holder for holding a substrate;

[0215] a heat insulating portion disposed below the substrate holder;

[0216] A reaction tube that divides a processing chamber for processing a substrate;

[0217] a first heating unit provided so as to surround the circumference of the reaction tube; and

[0218] a second heating portion provided between the substrate holder and the heat insulating portion,

[0219] The second heating portion is annular in shape and has a diameter smaller than that of the substrate, and is configured to heat a portion of the lower portion of the processing chamber in the radial direction.

[0220] (Note 25)

[0221] According to another aspect of the present invention, there is provided a substrate processing method or a semiconductor device manufacturing method, comprising:

[0222] A step of loading a substrate holder holding a substrate into a processing chamber;

[0223] The first heating unit and the second heating unit heat the processing chamber;

[0224] The process of supplying a process gas into the process chamber and exhausting the process gas; and

[0225] The step of attaching and removing the substrate holder from the processing chamber,

[0226] In the step of heating the interior of the processing chamber, the second heating unit heats a portion in a radial direction in an annular shape on a central side of a periphery of the substrate from below the substrate holder.

Claims

1. A heating unit, arranged between a substrate holder and a heat insulating unit in a substrate processing device, characterized in that: have: A substantially cardioid-shaped heating portion; and a hanging portion extending downward from the heat generating portion, The heating portion is contained in an annular region with a diameter smaller than that of the substrate. The hanging portion is longer than the insulating portion and has a protective member that penetrates the cover of the processing chamber from inside to outside of the processing chamber where the substrate is processed, and the penetration portion of the hanging portion can be sealed by a sealing member. The annular region is not less than 1 / 5 and not more than 3 / 5 of the diameter of the substrate, and the central region of the lowermost substrate of the substrate holder is not heated but the region outside the central region is heated.

2. The heating unit according to claim 1, characterized in that: The heating portion includes a quartz protection member as a frame body having a circular cross section, and a resistance heating element inserted into the protection member of the heating portion. Lead wires from the heating portion are bundled and inserted into the protection member of the hanging portion.

3. The heating unit according to claim 1, characterized in that: A temperature measuring member is connected to the surface of the heat generating portion.

4. The heating unit according to claim 1, characterized in that: The heating portion is a coil-shaped resistance heating element, and its center line forms a circle.

5. The heating unit according to claim 1, characterized in that: The hanging portion is formed at a central position of the heat generating portion in a plan view.

6. A substrate processing device comprising: a substrate holder for holding a substrate; and a heating unit between the substrate holder and a heat insulating unit for heating the substrate held by the substrate holder, wherein: The heating unit has: A substantially cardioid-shaped heating portion; and a hanging portion extending downward from the heat generating portion, The heat generating portion is contained in an annular region with a diameter smaller than that of the substrate. The hanging portion is longer than the insulating portion and has a protective member penetrating from inside to outside of a processing chamber where the substrate is processed. The penetrating portion of the hanging portion can be sealed by a sealing member.

7. A substrate processing method, characterized in that: have: a step of holding a substrate by a substrate holder; and The step of heating the substrate held by the substrate holder through a heating unit from between the substrate holder and the heat insulating unit, wherein the heating unit comprises a substantially cardioid-shaped heating unit and a hanging unit extending downward from the heating unit, and the heating unit is contained in an annular region with a diameter smaller than that of the substrate. The hanging portion is longer than the insulating portion and has a protective member penetrating from inside to outside of a processing chamber where the substrate is processed. The penetrating portion of the hanging portion can be sealed by a sealing member.

8. A method for manufacturing a semiconductor device, characterized in that: have: have: a step of holding a substrate by a substrate holder; and The step of heating the substrate held by the substrate holder through a heating unit from between the substrate holder and the heat insulating unit, wherein the heating unit comprises a substantially cardioid-shaped heating unit and a hanging unit extending downward from the heating unit, and the heating unit is contained in an annular region with a diameter smaller than that of the substrate. The hanging portion is longer than the insulating portion and has a protective member penetrating from inside to outside of a processing chamber where the substrate is processed. The penetrating portion of the hanging portion can be sealed by a sealing member.

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