Display device and method for manufacturing the same

Abstract

The present invention relates to a display device and a method for manufacturing a display device. The display device includes a substrate, a pixel circuit unit, a light-blocking layer, a light-emitting layer, and a sealing unit. Among them, the pixel circuit unit is disposed on the substrate and has a first hole, the light-blocking layer is disposed on the pixel circuit unit and has a second hole corresponding to the first hole, the light-emitting layer is disposed on the pixel circuit unit, and the sealing unit is located on the light-blocking layer. The substrate includes a first layer and a second layer. Among them, the first layer has a recess corresponding to the first hole, and the second layer is disposed between the first layer and the pixel circuit unit and has a third hole located between the recess and the second hole. The sealing unit includes a cover portion and an extension portion. Among them, the cover portion is located on the light-blocking layer, and the extension portion extends from the cover portion. The recess has a width larger than the width of the third hole.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and all benefits derived therefrom of Korean Patent Application No. 10 - 2017 - 0142792, filed on October 30, 2017, and Korean Patent Application No. 10 - 2018 - 0011478, filed on January 30, 2018, the contents of which are incorporated herein by reference in their entirety. Technical field

[0003] Exemplary embodiments of the present invention relate to a display device having improved joining force between a sealing unit and a substrate and ultraviolet ( "UV") light blocking ability, and a method of manufacturing the display device. Background art

[0004] Compared with a cathode ray tube ( "CRT") having the disadvantages of large weight and large volume, a display device having the advantages of reduced weight and volume may include, for example, a liquid crystal display ( "LCD") device, a field emission display ( "FED") device, a plasma display panel ( "PDP") device, and an organic light - emitting diode ( "OLED") display device.

[0005] Among these display devices, an OLED display device uses an OLED to display an image, where the OLED generates light through the recombination of electrons and holes. Summary of the invention

[0006] Ultraviolet ( "UV") light contained in sunlight is applied to a light - blocking layer of an organic light - emitting diode ( "OLED") display device, and waste gas may be generated from the light - blocking layer including an organic material. This waste gas damages the OLED, which may cause defects such as pixel shrinkage.

[0007] Exemplary embodiments of the present invention may relate to a display device capable of enhancing the joining force between a sealing unit and a substrate and having excellent UV light blocking ability, and a method of manufacturing the display device.

[0008] According to an exemplary embodiment of the present invention, a display device includes a substrate, a pixel circuit unit, a light-blocking layer, a light-emitting layer, and a sealing unit. The pixel circuit unit is disposed on the substrate and a first hole is defined in the pixel circuit unit. The light-blocking layer is disposed on the pixel circuit unit and a second hole is defined in the light-blocking layer. The second hole is positioned to correspond to the first hole. The light-emitting layer is disposed on the pixel circuit unit to correspond to a light-emitting region defined by the light-blocking layer, and the sealing unit is located on the light-blocking layer. The substrate includes a first layer and a second layer. The first layer has a recess positioned to correspond to the first hole, and the second layer is disposed between the first layer and the pixel circuit unit. In the second layer, a third hole is defined between the recess and the second hole. The sealing unit includes a cover portion and an extension portion. The cover portion is disposed on the light-blocking layer, and the extension portion extends from the cover portion to be inserted into the first hole, the second hole, the third hole, and the recess. The recess has a width greater than the width of the third hole.

[0009] In an exemplary embodiment, the recess may have a width that gradually increases in a direction from the first layer toward the second layer.

[0010] In an exemplary embodiment, at least one of the inner walls of the recess facing each other may be inclined at a predetermined angle with respect to an interface between the first layer and the second layer.

[0011] In an exemplary embodiment, an angle defined between at least one of the inner walls of the recess facing each other and the interface may be an obtuse angle.

[0012] In an exemplary embodiment, in a plan view, the third hole may be surrounded by the recess.

[0013] In an exemplary embodiment, the third hole may overlap with the recess.

[0014] In an exemplary embodiment, the first hole, the second hole, the third hole, and the recess may be located in at least one of a display region and a non-display region of the substrate.

[0015] In an exemplary embodiment, the first hole, the second hole, the third hole, and the recess may be located between a high-potential line and a data line disposed in the display region and adjacent to each other.

[0016] In an exemplary embodiment, the display device may further include a driving circuit unit. The driving circuit unit is located in the non-display region and is connected to a scan line or an emission control line of the pixel circuit unit.

[0017] In an exemplary embodiment, the display device may further include a plurality of clock lines. The plurality of clock lines are disposed in the non-display region and are connected to the driving circuit unit. The first hole, the second hole, the third hole, and the recess may be located between adjacent clock lines among the plurality of clock lines.

[0018] In an exemplary embodiment, one of the inner walls of the recesses facing each other and one of the inner walls of the first hole facing each other may be located on a straight line.

[0019] In an exemplary embodiment, one of the first layer and the second layer may include an organic material, and the other of the first layer and the second layer may include an inorganic material.

[0020] According to an exemplary embodiment of the present invention, a display device includes a substrate, a pixel circuit unit, a light-blocking layer, a light-emitting layer, and a sealing unit. The pixel circuit unit is located on the substrate, the light-blocking layer is disposed on the pixel circuit unit and a first hole is defined in the light-blocking layer, the light-emitting layer is disposed on the pixel circuit unit to correspond to a light-emitting region defined by the light-blocking layer, and the sealing unit is disposed on the light-blocking layer. The pixel circuit unit includes a first layer, a second layer, and a third layer. The first layer has a recess positioned to correspond to the first hole. The second layer is disposed on the first layer, and a second hole is defined between the recess and the first hole in the second layer. The third layer is disposed on the second layer, and a third hole is defined between the second hole and the first hole in the third layer. The sealing unit includes a cover portion and an extension portion. The cover portion is disposed on the light-blocking layer, and the extension portion extends from the cover portion to be inserted into the first hole, the second hole, the third hole, and the recess. The recess has a width greater than the width of the second hole.

[0021] In an exemplary embodiment, the recess may have a width that gradually increases in a direction from the first layer toward the second layer.

[0022] In an exemplary embodiment, at least one of the inner walls of the recesses facing each other may be inclined at a predetermined angle with respect to an interface between the first layer and the second layer.

[0023] In an exemplary embodiment, an angle defined between at least one of the inner walls of the recesses facing each other and the interface may be an obtuse angle.

[0024] In an exemplary embodiment, the first hole, the second hole, the third hole, and the recess may be located in at least one of a display area and a non-display area of the substrate.

[0025] According to an exemplary embodiment of the present invention, a method of manufacturing a display device includes: preparing a carrier substrate; sequentially forming a first layer and a second layer on the carrier substrate; forming a pixel circuit unit on the second layer; forming a light-blocking layer on the pixel circuit unit, wherein the light-blocking layer defines a light-emitting region; defining a first hole passing through the light-blocking layer; defining a second hole passing through an insulating layer of the pixel circuit unit and corresponding to the first hole; defining a third hole passing through the second layer and corresponding to the second hole; defining a recess in the first layer corresponding to the third hole, the recess having a width larger than the width of the third hole; and forming a sealing unit, wherein the sealing unit includes a cover portion and an extension portion, wherein the cover portion is located on the light-blocking layer, and the extension portion extends from the cover portion to be buried in the first hole, the second hole, the third hole, and the recess.

[0026] In an exemplary embodiment, the recess may be defined by oxygen dry etching or a laser beam.

[0027] In an exemplary embodiment, the first layer may include an organic material, and the second layer may include an inorganic material.

[0028] In an exemplary embodiment, when the third hole is defined by selectively removing the second layer, the insulating layer of the bending portion of the display device may be removed together.

[0029] According to an exemplary embodiment of the present invention, a display device includes a substrate, a switching element, a pixel electrode, a light-emitting layer, a common electrode, and a sealing unit, wherein the switching element is located on the substrate, the pixel electrode is located on the switching element and connected to the switching element, the light-emitting layer is located on the pixel electrode, the common electrode is located on the light-emitting layer, and the sealing unit is disposed on the common electrode. The sealing unit includes an organic layer and at least one first composite inorganic layer, wherein the at least one first composite inorganic layer is disposed between the organic layer and the common electrode. The at least one first composite inorganic layer includes a first inorganic layer and a second inorganic layer, wherein the first inorganic layer is located between the common electrode and the organic layer, and the second inorganic layer is located between the first inorganic layer and the organic layer. The first inorganic layer and the second inorganic layer have different refractive indexes from each other and are in contact with each other.

[0030] In an exemplary embodiment, the refractive index of the first inorganic layer may be higher than the refractive index of the second inorganic layer.

[0031] In an exemplary embodiment, the difference between the refractive index of the first inorganic layer and the refractive index of the second inorganic layer may be substantially equal to or greater than about 0.4.

[0032] In an exemplary embodiment, a second inorganic layer in one of the first composite inorganic layers adjacent to each other in at least one first composite inorganic layer and a first inorganic layer in the other of the first composite inorganic layers adjacent to each other in at least one first composite inorganic layer may face each other. The second inorganic layer in one of the first composite inorganic layers adjacent to each other in at least one first composite inorganic layer and the first inorganic layer in the other of the first composite inorganic layers adjacent to each other in at least one first composite inorganic layer may have refractive indexes different from each other.

[0033] In an exemplary embodiment, a second inorganic layer in one of the first composite inorganic layers adjacent to each other in at least one first composite inorganic layer and a first inorganic layer in the other of the first composite inorganic layers adjacent to each other in at least one first composite inorganic layer may be in contact with each other.

[0034] In an exemplary embodiment, a second inorganic layer in one of the first composite inorganic layers adjacent to each other in at least one first composite inorganic layer and a second inorganic layer in the other of the first composite inorganic layers adjacent to each other in at least one first composite inorganic layer may have substantially equal refractive indexes.

[0035] In an exemplary embodiment, the first inorganic layer and the second inorganic layer may include TiO 2 , SiN x , AlO x , Al 2 O 3 and SiO x and at least one of them.

[0036] In an exemplary embodiment, one of the first inorganic layer and the second inorganic layer may include TiO 2 , and the other of the first inorganic layer and the second inorganic layer may include Al 2 O 3 .

[0037] In an exemplary embodiment, at least one first composite inorganic layer may include at least five first composite inorganic layers.

[0038] In an exemplary embodiment, the total thickness of at least five first composite inorganic layers may be greater than about 0.5 micrometers (μm) and less than about 1 μm.

[0039] In an exemplary embodiment, the display device may further include a first auxiliary inorganic layer, wherein the first auxiliary inorganic layer is located between at least one first composite inorganic layer and the organic layer.

[0040] In an exemplary embodiment, the refractive index of the first auxiliary inorganic layer may be substantially equal to the refractive index of the first inorganic layer.

[0041] In an exemplary embodiment, the display device may further include at least one second composite inorganic layer, wherein the at least one second composite inorganic layer is positioned opposite to the at least one first composite inorganic layer, and an organic layer is inserted between the at least one first composite inorganic layer and the at least one second composite inorganic layer.

[0042] In an exemplary embodiment, the at least one second composite inorganic layer may include a first inorganic layer and a second inorganic layer, wherein the first inorganic layer is located on the organic layer, and the second inorganic layer is located on the first inorganic layer of the at least one second composite inorganic layer.

[0043] In an exemplary embodiment, the first inorganic layer of the at least one second composite inorganic layer and the second inorganic layer of the at least one second composite inorganic layer may have different refractive indices from each other.

[0044] In an exemplary embodiment, the first inorganic layer of the at least one second composite inorganic layer and the first inorganic layer of the at least one first composite inorganic layer may have substantially equal refractive indices, and the second inorganic layer of the at least one second composite inorganic layer and the second inorganic layer of the at least one first composite inorganic layer may have substantially equal refractive indices.

[0045] In an exemplary embodiment, the first inorganic layer of the at least one second composite inorganic layer and the second inorganic layer of the at least one second composite inorganic layer may be in contact with each other.

[0046] In an exemplary embodiment, the difference between the refractive index of the first inorganic layer included in the at least one second composite inorganic layer and the refractive index of the second inorganic layer included in the at least one second composite inorganic layer may be substantially equal to or greater than about 0.4.

[0047] In an exemplary embodiment, the display device may further include a second auxiliary inorganic layer, wherein the second auxiliary inorganic layer is located between the at least one second composite inorganic layer and the organic layer.

[0048] In an exemplary embodiment, the refractive index of the second auxiliary inorganic layer may be substantially equal to the refractive index of the second inorganic layer included in the at least one second composite inorganic layer.

[0049] In an exemplary embodiment, the sealing unit may include at least one of a lower inorganic layer and an upper inorganic layer, wherein the lower inorganic layer is located between the organic layer and the at least one first composite inorganic layer, and the upper inorganic layer is located on the organic layer.

[0050] In an exemplary embodiment, the display device may further include a protective layer, wherein the protective layer is located between the common electrode and the at least one first composite inorganic layer.

[0051] In an exemplary embodiment, the protective layer may include a cover layer and a metal layer, where the cover layer is located on the common electrode, and the metal layer is located on the cover layer.

[0052] In an exemplary embodiment, the cover layer may include an organic material, and the metal layer may include LiF.

[0053] In an exemplary embodiment, the interface between the first inorganic layer and the second inorganic layer may have a first concavo-convex pattern.

[0054] In an exemplary embodiment, the surface of the second inorganic layer facing the interface may have a second concavo-convex pattern.

[0055] In an exemplary embodiment, the arrangement direction of the convex portions included in the first concavo-convex pattern may cross the arrangement direction of the convex portions included in the second concavo-convex pattern.

[0056] According to an exemplary embodiment of the present invention, a display device includes a substrate, a switching element, a pixel electrode, a light-emitting layer, a common electrode, and a sealing unit, where the switching element is located on the substrate, the pixel electrode is disposed on the switching element and connected to the switching element, the light-emitting layer is located on the pixel electrode, the common electrode is located on the light-emitting layer, and the sealing unit is located on the common electrode. The sealing unit includes an organic layer and a first composite inorganic layer, where the first composite inorganic layer is located between the common electrode and the organic layer. The first composite inorganic layer includes a plurality of first inorganic layers and a plurality of second inorganic layers, where the plurality of first inorganic layers and the plurality of second inorganic layers are alternately arranged in a direction from the common electrode toward the organic layer. The first inorganic layer and the second inorganic layer have different refractive indices from each other, and the adjacent first inorganic layer and second inorganic layer are in contact with each other.

[0057] According to an exemplary embodiment of the present invention, a method of manufacturing a display device includes: forming a switching element on a substrate; forming a pixel electrode on the switching element, the pixel electrode being connected to the switching element; forming a light-emitting layer on the pixel electrode; forming a common electrode on the light-emitting layer; and forming a sealing unit on the common electrode. The sealing unit includes an organic layer and at least one first composite inorganic layer, where the at least one first composite inorganic layer is located between the common electrode and the organic layer. The at least one first composite inorganic layer includes a first inorganic layer and a second inorganic layer, where the first inorganic layer is located between the common electrode and the organic layer, and the second inorganic layer is located between the first inorganic layer and the organic layer. The first inorganic layer and the second inorganic layer have different refractive indices from each other, and are in contact with each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] A more complete understanding of the exemplary embodiments of the present invention will become more apparent by referring to the drawings in detail, in which:

[0059] Figure 1 A block diagram showing an exemplary embodiment of a display device according to the present invention;

[0060] Figure 2 To show Figure 1 An equivalent circuit diagram of one pixel among the pixels shown in;

[0061] Figure 3 To show a detailed plan view of a display device including one pixel among the pixels shown in Figure 1 and the lines connected thereto;

[0062] FIG. 4A to FIG. 4G To show only Figure 3 A view of a part of the elements of;

[0063] Figure 5 A cross-sectional view taken along line I-I' of Figure 3 ;

[0064] Figure 6 A cross-sectional view taken along line II-II' of Figure 3 ;

[0065] Figure 7 An enlarged view of part A of Figure 6 ;

[0066] Figure 8 To show a detailed plan view of a display device including a plurality of pixels shown in Figure 1 and the lines connected thereto;

[0067] Fig. 9 A cross-sectional view taken along line I-I' of another exemplary embodiment of Figure 3 ;

[0068] Fig.10 A cross-sectional view taken along line II-II' of another exemplary embodiment of Figure 3 ;

[0069] Fig.11 An enlarged view of part A of Fig. 9 ;

[0070] Fig.12 An enlarged view of part A of another exemplary embodiment of Fig. 9 ;

[0071] Fig.13 An enlarged view of part A of another exemplary embodiment of Fig. 9 ;

[0072] Fig.14 An enlarged view of part A of another exemplary embodiment of Fig. 9 ;

[0073] Fig.15 View of part A of another exemplary embodiment for magnification Fig. 9 ;

[0074] Fig.16 View of part A of another exemplary embodiment for magnification Fig. 9 ;

[0075] Fig.17 View of part A of another exemplary embodiment for magnification Fig. 9 ;

[0076] Fig.18 View of part A of another exemplary embodiment for magnification Fig. 9 ;

[0077] Fig.19 View of part A of another exemplary embodiment for magnification Fig. 9 ;

[0078] Fig. 20 View of part A of another exemplary embodiment for magnification Fig. 9 ;

[0079] Fig.21 View of part A of another exemplary embodiment for magnification Fig. 9 ;

[0080] Fig. 22 View of part A of another exemplary embodiment for magnification Fig. 9 ;

[0081] Fig.23 View of part A of another exemplary embodiment for magnification Fig. 9 ;

[0082] Fig.24 View of part A of another exemplary embodiment for magnification Fig. 9 ;

[0083] Fig.25 Exploded perspective view showing the composite inorganic layer of Fig.11 ;

[0084] Fig.26 Graph showing an exemplary embodiment of the change in transmittance of the composite inorganic multilayer according to the present invention according to the application of sunlight

[0085] Fig. 27 Graph showing an exemplary embodiment of the change in transmittance of the composite inorganic multilayer according to the present invention according to the application of sunlight

[0086] Fig.28A diagram showing another exemplary embodiment of the transmittance change of the composite inorganic multilayer according to the present invention with the application of sunlight;

[0087] Fig.29 A table showing an exemplary embodiment of the materials and refractive indices of each inorganic layer included in the composite inorganic layer according to the present invention;

[0088] Fig.30 A table showing an exemplary embodiment of the combination of the composite inorganic layer according to the present invention and the transmittance of each wavelength combination according to the present invention;

[0089] Fig.31 Showing Fig.30 A diagram of the characteristics of each combination in;

[0090] Fig.32A Showing the arrangement on the SiN x layer and including SiN x and SiO x A table of the transmittance of the composite inorganic multilayer;

[0091] Fig.32B Showing Fig.32A A diagram of the transmittance of the composite inorganic multilayer;

[0092] Fig.32C Magnifying Fig.32B A view of a partial wavelength range of;

[0093] Fig.33A Showing the arrangement on the SiN x layer and including TiO 2 and Al 2 O 3 A table of the transmittance and thickness of the composite inorganic multilayer;

[0094] Fig.33B Showing Fig.33A A diagram of the transmittance of the composite inorganic multilayer;

[0095] Fig.33C Magnifying Fig.33B A view of a partial wavelength range of;

[0096] Fig.34A Showing a composite inorganic multilayer including a TiO 2 layer and an inorganic layer having a refractive index smaller than that of TiO 2 A table of the transmittance;

[0097] Fig.34B Showing Fig.34A A diagram of the transmittance of each combination;

[0098] Fig.34C For magnifying Fig.34B the view of a partial wavelength range;

[0099] Fig.34D For magnifying Fig.34B the view of another partial wavelength range;

[0100] Fig.35 For showing the views of various embodiments of the sealing unit according to the present invention and the thicknesses of related layers;

[0101] Fig.36 For showing Figure 1 the detailed configuration diagram of the scan driver;

[0102] FIG. 37A to FIG. 37M For showing a cross-sectional view of an exemplary embodiment for explaining the manufacturing process of the display device according to the present invention;

[0103] Fig.38 For showing the view for explaining the method of using a laser to define a recess;

[0104] Fig.39 For showing a cross-sectional view taken along line II-II' of another exemplary embodiment according to the present invention along Figure 3 ;

[0105] Fig.40 For magnifying Fig.39 the view of part A;

[0106] Fig.41 For showing a cross-sectional view taken along line II-II' of another exemplary embodiment along Figure 3 ; and

[0107] Fig.42 For showing a cross-sectional view taken along line II-II' of another exemplary embodiment along Figure 3 . Detailed Embodiments

[0108] Exemplary embodiments will now be described more fully hereinafter with reference to the accompanying drawings. Although the present invention may be modified in various ways and have several embodiments, the exemplary embodiments are shown in the drawings and will be mainly described in the specification. However, the scope of the present invention is not limited to the exemplary embodiments and should be construed as including all changes, equivalents, and substitutions within the spirit and scope of the present invention.

[0109] For clarity and ease of description of multiple layers and regions, in the accompanying drawings, the thicknesses of the multiple layers and regions are shown in an enlarged manner. When a layer, region, or plate is referred to as being "on" another layer, region, or plate, the layer, region, or plate can be directly on the other layer, region, or plate, or there can be intermediate layers, regions, or plates therebetween. In contrast, when a layer, region, or plate is referred to as being "directly" "on" another layer, region, or plate, there can be no intermediate layers, regions, or plates therebetween. Further, when a layer, region, or plate is referred to as being "below" another layer, region, or plate, the layer, region, or plate can be directly below the other layer, region, or plate, or there can be intermediate layers, regions, or plates therebetween. In contrast, when a layer, region, or plate is referred to as being "directly" "below" another layer, region, or plate, there can be no intermediate layers, regions, or plates therebetween.

[0110] For ease of description, in this document, spatial relative terms such as "below", "beneath", "lower", "above", "upper", etc. may be used to describe the relationship between one element or component and another element or component as shown in the accompanying drawings. It should be understood that, in addition to the orientation depicted in the accompanying drawings, the spatial relative terms are intended to cover different orientations of the device during use or operation. For example, in the case where the device shown in the figure is flipped, a device located "below" or "beneath" another device may be positioned "above" the other device. Accordingly, the illustrative term "below" can include both a lower position and an upper position. The device can also be oriented in other directions, and thus the spatial relative terms can be interpreted differently depending on the orientation.

[0111] Throughout the specification, when an element is referred to as being "connected" to another element, the element is "directly connected" to the other element, or "electrically connected" to the other element through one or more intermediate elements therebetween. It should also be understood that when the terms "comprise", "comprises", "include", and / or "includes" are used in this specification, they indicate the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof.

[0112] It should be understood that although terms such as "first", "second", "third", etc. may be used in this document to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, without departing from the teachings herein, the "first element" discussed below can be referred to as the "second element" or the "third element", and the "second element" and the "third element" can be similarly referred to.

[0113] Considering the measurements and the errors associated with a specific number of measurements (i.e., the limitations of the measurement system), as used herein, "about" or "approximately" includes the values and means within an acceptable deviation range of a specific value determined by a person of ordinary skill in the art. For example, "about" can mean within one or more standard deviations, or within ±30%, 20%, 10%, 5% of the value.

[0114] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by a person of ordinary skill in the art to which this disclosure pertains. It should also be understood that terms (such as those defined in a common dictionary), unless explicitly defined in this specification, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense.

[0115] Some of the parts unrelated to the description may not be provided to avoid obscuring the exemplary embodiments of the present invention, and the same reference numerals indicate the same elements throughout the specification.

[0116] Hereinafter, reference will be made to Figures 1 to 42 A display device and a method of manufacturing the display device according to an exemplary embodiment of the present invention will be described in detail.

[0117] Figure 1 FIG. is a block diagram showing a display device according to an exemplary embodiment of the present invention.

[0118] As Figure 1 shown, a display device 5555 according to an exemplary embodiment of the present invention includes a substrate 100, a scan driver 102, an emission control driver 103, a data driver 104, and a power supply 105.

[0119] On the substrate 100, "i + 2" scan lines SL0 to SLi+1, "k" emission control lines EL1 to ELk, "j" data lines DL1 to DLj, and "k × j (k multiplied by j)" pixels PX, a scan driver 102, an emission control driver 103, and a data driver 104 are arranged, where each of i, j, and k is a natural number greater than 1.

[0120] A plurality of pixels PX are located in the display area 100a of the substrate 100.

[0121] “i + 2” scan lines SL0 to SLi+1, “k” emission control lines EL1 to ELk, and “j” data lines DL1 to DLj are located in the display area 100a of the substrate 100. In this exemplary embodiment, the “i + 2” scan lines SL0 to SLi+1 extend into the non-display area 100b to be connected to the scan driver 102, the “k” emission control lines EL1 to ELk extend into the non-display area 100b to be connected to the emission control driver 103, and the “j” data lines DL1 to DLj extend into the non-display area 100b to be connected to the data driver 104.

[0122] The scan driver 102 and the emission control driver 103 can be fabricated on the substrate 100 by a process that is substantially the same as the process for forming the pixels PX. In an exemplary embodiment, for example, the switching elements of the scan driver 102, the switching elements of the emission control driver 103, and the switching elements of the pixels PX can be formed on the substrate 100 by a photolithography process.

[0123] In another exemplary embodiment, the emission control driver 103 can be embedded in the scan driver 102. In an exemplary embodiment, for example, the scan driver 102 can also perform the functions of the emission control driver 103. In this exemplary embodiment, the scan lines SL0 to SLi+1 and the emission control lines EL1 to ELk are driven together by the scan driver 102.

[0124] The data driver 104 can be fabricated in chip form. The data driver 104 can be attached to the substrate 100 by a chip bonding method. In an exemplary embodiment, when the data lines DL1 to DLj are connected to the data driver 104 through a separate printed circuit board (“PCB”) (not shown), the data driver 104 can be disposed on the PCB instead of on the substrate 100.

[0125] In an exemplary embodiment, each of the scan driver 102 and the emission control driver 103 can be fabricated in chip form. The chip-type scan driver 102 can be located in the non-display area 100b of the substrate 100 or at another separate PCB (not shown). The chip-type emission control driver 103 can be located in the non-display area 100b of the substrate 100 or at another separate PCB (not shown).

[0126] The scan lines SL0 to SLi+1 are arranged in the Y-axis direction, and each of the scan lines SL0 to SLi+1 extends in the X-axis direction. The emission control lines EL1 to ELk are arranged in the Y-axis direction, and each of the emission control lines EL1 to ELk extends in the X-axis direction. The data lines DL1 to DLj are arranged in the X-axis direction, and each of the data lines DL1 to DLj extends in the Y-axis direction.

[0127] Among the above scan lines SL0 to SLi+1, the scan line SL0 closest to the data driver 104 is defined as the first virtual scan line SL0, and the scan line SLi+1 farthest from the data driver 104 among the above scan lines SL0 to SLi+1 is defined as the second virtual scan line SLi+1. Additionally, the scan lines SL1 to SLi between the first virtual scan line SL0 and the second virtual scan line SLi+1 are sequentially defined as the first scan line SL1 to the i-th scan line SLi starting from the scan line closer to the data driver 104.

[0128] The scan driver 102 generates scan signals according to scan control signals provided from a timing controller (not shown), and sequentially applies the scan signals to the plurality of scan lines SL0 to SLi+1. The scan driver 102 outputs a first scan signal to an i-th scan signal, a first virtual scan signal, and a second virtual scan signal. The first scan signal to the i-th scan signal output from the scan driver 102 are respectively applied to the first scan line SL1 to the i-th scan line SLi. In an exemplary embodiment, for example, the n-th scan signal is applied to the n-th scan line SLn, where n is a natural number greater than or equal to 1 and less than or equal to i. Additionally, the first virtual scan signal output from the scan driver 102 is applied to the first virtual scan line SL0, and the second virtual scan signal output from the scan driver 102 is applied to the second virtual scan line SLi+1.

[0129] During one frame period, the scan driver 102 sequentially outputs a first scan signal to an i-th scan signal starting from the first scan signal. In this exemplary embodiment, the scan driver 102 outputs the first virtual scan signal before the first scan signal, and outputs the second virtual scan signal after the i-th scan signal. In other words, the scan driver 102 first outputs the first virtual scan signal during the one frame period, and finally outputs the second virtual scan signal during the one frame period. Accordingly, during one frame period, all the scan lines SL0 to SLi+1 including the virtual scan lines SL0 and SLi+1 are sequentially driven starting from the first virtual scan line SL0.

[0130] The emission control driver 103 generates an emission control signal according to a control signal provided from a timing controller (not shown), and sequentially applies the emission control signal to a plurality of emission control lines EL1 to ELk. The first emission control signal to the k-th emission control signal output from the emission control driver 103 are respectively applied to the first emission control line EL1 to the k-th emission control line ELk. In an exemplary embodiment, for example, the m-th emission control signal is applied to the m-th emission control line ELm, where m is a natural number greater than or equal to 1 and less than or equal to k. During one frame period, the emission control driver 103 sequentially outputs the first emission control signal to the k-th emission control signal starting from the first emission control signal. Accordingly, during one frame period, all the emission control lines EL1 to ELk are sequentially driven starting from the first emission control line EL1.

[0131] The data driver 104 applies the first data voltage to the j-th data voltage to the first data line DL1 to the j-th data line DLj respectively. In an exemplary embodiment, for example, the data driver 104 receives an image data signal and a data control signal from a timing controller (not shown). In addition, the data driver 104 samples the image data signal according to the data control signal, sequentially latches the sampled image data signal corresponding to one horizontal line in each horizontal period, and substantially synchronously applies the latched image data signal to the data lines DL1 to DLj.

[0132] The pixels PX are arranged in a matrix form in the display area 100a on the substrate 100. The pixels PX emit light having different colors from each other. In an exemplary embodiment, for example, among the pixels PX shown in Figure 1 the pixel indicated by the reference numeral "R" is a red pixel that emits red light, the pixel indicated by the reference numeral "G" is a green pixel that emits green light, and the pixel indicated by the reference numeral "B" is a blue pixel that emits blue light.

[0133] In an exemplary embodiment, although not shown, the display device according to an exemplary embodiment of the present invention may further include at least one white pixel that emits white light. The white pixel may be arranged in the display area 100a on the substrate 100.

[0134] One pixel is connected to at least one scanning line. In an exemplary embodiment, as Figure 1As shown in [figure], among the multiple pixels PX connected to the first data line DL1, the blue pixel closest to the data driver 104 is connected to three scan lines (e.g., the first virtual scan line SL0, the first scan line SL1, and the second scan line SL2) that receive scan signals with different output timings. In this exemplary embodiment, among the multiple pixels PX connected to the second data line DL2, the green pixel that is the third farthest from the data driver 104 is connected to three scan lines (e.g., the fourth scan line SL4, the fifth scan line SL5, and the sixth scan line SL6) that receive scan signals applied with different output timings.

[0135] In an exemplary embodiment, pixels that are commonly connected to the same data line and are positioned adjacent to each other are commonly connected to at least one scan line. In other words, two adjacent pixels among the pixels connected to the same data line and adjacent to each other in the Y-axis direction share at least one scan line. In one exemplary embodiment, for example, the green pixel (hereinafter referred to as the "first green pixel") that is connected to the second data line DL2 and closest to the data driver 104 and the green pixel (hereinafter referred to as the "second green pixel") that is connected to the second data line DL2 and the second closest to the data driver 104 are positioned adjacent to each other, and the first green pixel and the second green pixel are commonly connected to the second scan line SL2. In another exemplary embodiment, when the green pixel that is the third farthest from the data driver 104 and connected to the second data line DL2 is defined as the third green pixel, the third green pixel and the second green pixel are commonly connected to the fourth scan line SL4.

[0136] Pixels that are commonly connected to the same data line are independently connected to one or more different scan lines. In one exemplary embodiment, for example, the above-mentioned first green pixel is independently connected to the first scan line SL1, the above-mentioned second green pixel is independently connected to the third scan line SL3, and the above-mentioned third green pixel is independently connected to the fifth scan line SL5.

[0137] Thus, each pixel among the pixels connected to the same data line is independently connected to at least one scan line. As used herein, the meaning that at least two pixels (e.g., the first pixel and the second pixel) are connected to different scan lines is that at least one of the scan lines connected to the first pixel is different from at least one of the scan lines connected to the second pixel. Accordingly, the pixels connected to the same data line are respectively connected to different scan lines.

[0138] As used herein, the meaning that at least two pixels (e.g., a first pixel and a second pixel) are connected to the same scan line is that the scan line connected to the first pixel is exactly the same as the scan line connected to the second pixel. Accordingly, each of the pixels connected to the same emission control line is connected to the same scan line. In one exemplary embodiment, for example, the pixels commonly connected to the second emission control line EL2 are commonly connected to the second scan line SL2, the third scan line SL3, and the fourth scan line SL4.

[0139] The red pixels and the blue pixels are connected to the (2p - 1)-th data line, and the green pixels are connected to the 2p-th data line, where p is a natural number. In one exemplary embodiment, for example, the red pixels and the blue pixels are connected to the first data line DL1, and the green pixels are connected to the second data line DL2.

[0140] One pixel (hereinafter referred to as "first predetermined pixel") connected to the (2p - 1)-th data line (e.g., the first data line DL1) and one pixel (hereinafter referred to as "second predetermined pixel") connected to another (2p - 1)-th data line (e.g., the third data line DL3) may be connected to the same scan line, and in this exemplary embodiment, the first predetermined pixel emits light having a color different from the color of the light emitted from the second predetermined pixel. In one exemplary embodiment, for example, the first predetermined pixel may be a blue pixel connected to the first virtual scan line SL0, the first scan line SL1, the second scan line SL2, and the first data line DL1, and the second predetermined pixel may be a red pixel connected to the first virtual scan line SL0, the first scan line SL1, the second scan line SL2, and the third data line DL3.

[0141] The unit pixel for displaying a unit image includes two adjacent pixels connected to the same data line (e.g., the (2p - 1)-th data line) and emitting light having different colors from each other, and at least one green pixel adjacent to one of the two adjacent pixels. In one exemplary embodiment, for example, a red pixel connected to the third data line DL3 and the first scan line SL1, a blue pixel connected to the third data line DL3 and the third scan line SL3, a green pixel connected to the second data DL2 and the first scan line SL1, and a green pixel connected to the fourth data line DL4 and the first scan line SL1 may commonly define a unit pixel.

[0142] Each pixel PX generally receives a high-potential driving voltage ELVDD, a low-potential driving voltage ELVSS, and an initialization voltage Vinit from a power supply 105. In this exemplary embodiment, each pixel PX receives all of the high-potential driving voltage ELVDD, the low-potential driving voltage ELVSS, and the initialization voltage Vinit.

[0143] Figure 2 To illustrate Figure 1 an equivalent circuit diagram of one pixel among the pixels PX shown in

[0144] In an exemplary embodiment, the pixel may include a first switching element T1, a second switching element T2, a third switching element T3, a fourth switching element T4, a fifth switching element T5, a sixth switching element T6, a seventh switching element T7, a storage capacitor Cst, and a light-emitting element (hereinafter referred to as a light-emitting diode (“LED”)).

[0145] In an exemplary embodiment, as shown in Figure 2 each of, for example, the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, the sixth switching element T6, and the seventh switching element T7 may be a P-type transistor. However, the present invention is not limited thereto, and in another exemplary embodiment, each of, for example, the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, the sixth switching element T6, and the seventh switching element T7 may be an N-type transistor.

[0146] The first switching element T1 includes a gate electrode connected to a first node n1, and is connected between a second node n2 and a third node n3. One of the source electrode and the drain electrode of the first switching element T1 is connected to the second node n2, and the other of the source electrode and the drain electrode of the first switching element T1 is connected to the third node n3.

[0147] The second switching element T2 includes a gate electrode connected to the n-th scan line SLn, and is connected between the data line DL and the second node n2. One of the source electrode and the drain electrode of the second switching element T2 is connected to the data line DL, and the other of the source electrode and the drain electrode of the second switching element T2 is connected to the second node n2. An n-th scan signal SSn is applied to the n-th scan line SLn.

[0148] The third switching element T3 includes a gate electrode connected to the n-th scan line SLn, and is connected between the first node n1 and the third node n3. One of the source electrode and the drain electrode of the third switching element T3 is connected to the first node n1, and the other of the source electrode and the drain electrode of the third switching element T3 is connected to the third node n3.

[0149] The fourth switching element T4 includes a gate electrode connected to the (n-1)th scan line SLn-1, and is connected between the first node n1 and the initialization line IL. One of the source electrode and the drain electrode of the fourth switching element T4 is connected to the first node n1, and the other of the source electrode and the drain electrode of the fourth switching element T4 is connected to the initialization line IL. An initialization voltage Vinit is applied to the initialization line IL, and a (n-1)th scan signal SSn-1 is applied to the (n-1)th scan line SLn-1.

[0150] The fifth switching element T5 includes a gate electrode connected to the emission control line EL, and is connected between the second node n2 and the high potential line VDL which is one of the power supply lines. One of the source electrode and the drain electrode of the fifth switching element T5 is connected to the high potential line VDL, and the other of the source electrode and the drain electrode of the fifth switching element T5 is connected to the second node n2. A high potential driving voltage ELVDD is applied to the high potential line VDL.

[0151] The sixth switching element T6 includes a gate electrode connected to the emission control line EL, and is connected between the third node n3 and the fourth node n4. One of the source electrode and the drain electrode of the sixth switching element T6 is connected to the third node n3, and the other of the source electrode and the drain electrode of the sixth switching element T6 is connected to the fourth node n4. An emission control signal ES is applied to the emission control line EL.

[0152] The seventh switching element T7 includes a gate electrode connected to the (n+1)th scan line SLn+1, and is connected between the initialization line IL and the fourth node n4. One of the source electrode and the drain electrode of the seventh switching element T7 is connected to the initialization line IL, and the other of the source electrode and the drain electrode of the seventh switching element T7 is connected to the fourth node n4. A (n+1)th scan signal SSn+1 is applied to the (n+1)th scan line SLn+1.

[0153] The storage capacitor Cst is connected between the high potential line VDL and the first node n1. The storage capacitor Cst stores the signal applied to the gate electrode of the first switching element T1 for one frame period.

[0154] The LED emits light corresponding to the driving current applied through the first switching element T1. The LED emits light having a brightness depending on the magnitude of the driving current. The anode of the LED is connected to the fourth node n4, and the cathode of the LED is connected to the low potential line VSL which is the other of the power supply lines. A low potential driving voltage ELVSS is applied to the low potential line VSL. In an exemplary embodiment, for example, the LED may be an organic light emitting diode (“OLED”). The anode of the LED corresponds to the pixel electrode to be described below, and the cathode of the LED corresponds to the common electrode to be described below.

[0155] When the (n-1)th scan signal SSn-1 is applied to the (n-1)th scan line SLn-1, the fourth switching element T4 is turned on. The initialization voltage Vinit is applied to the first node n1 (i.e., the gate electrode of the first switching element T1) through the turned-on fourth switching element T4. Accordingly, the voltage of the gate electrode of the first switching element T1 is initialized.

[0156] When the nth scan signal SSn is applied to the nth scan line SLn, the second switching element T2 and the third switching element T3 are turned on. The data voltage DA is applied to the first node n1 (i.e., the gate electrode of the first switching element T1) through the turned-on second switching element T2, and accordingly, the first switching element T1 is turned on. Accordingly, the threshold voltage of the first switching element T1 is detected, and the threshold voltage is stored in the storage capacitor Cst.

[0157] When the emission control signal ES is applied to the emission control line EL, the fifth switching element T5 and the sixth switching element T6 are turned on. The drive current is applied to the LED through the turned-on fifth switching element T5, the turned-on first switching element T1, and the turned-on sixth switching element T6, thereby causing the LED to emit light.

[0158] When the (n+1)th scan signal SSn+1 is applied to the (n+1)th scan line SLn+1, the seventh switching element T7 is turned on. The initialization voltage Vinit is applied to the fourth node n4 (i.e., the anode of the LED) through the turned-on seventh switching element T7. Accordingly, the LED is biased in the reverse direction, thereby turning off the LED.

[0159] Figure 3 To show including Figure 1 a detailed plan view of a display device including one pixel among the pixels shown in FIG. 4A to FIG. 4G To show only Figure 3 a part of the elements of Figure 5 To show a cross-sectional view taken along Figure 3 the line I-I' of

[0160] Specifically, Figure 4A To show Figure 3 a view of the semiconductor layer 321 of Figure 4B To show Figure 3 a view of the (n-1)th scan line SLn-1, the nth scan line SLn, the (n+1)th scan line SLn+1, and the emission control line EL of Figure 4C To show Figure 3 a view of the initialization line IL and the capacitor electrode 201 of Figure 4D Shows Figure 3 the data line DL and the high potential line VDL of Figure 4E A view showing Figure 3 the pixel electrode PE, Figure 4F A view showing Figure 3 the semiconductor layer 321, the (n - 1)-th scan line SLn - 1, the n-th scan line SLn, the (n + 1)-th scan line SLn + 1, and the emission control line EL, and Figure 4G A view showing Figure 3 the first connection electrode 701, the second connection electrode 702, the third connection electrode 703, the data line DL, the high potential line VDL, and the light blocking layer 190.

[0161] As Figures 3 to 5 shown, a display device according to an exemplary embodiment of the present invention may include a substrate 100, a pixel circuit unit 200, a light blocking layer 190, a spacer 422, an LED, and a sealing unit 750.

[0162] As Figure 3 and Figure 4F shown, the first switching element T1 of the pixel circuit unit 200 includes a first gate electrode GE1, a first source electrode SE1, and a first drain electrode DE1.

[0163] As Figure 3 and Figure 4F shown, the second switching element T2 of the pixel circuit unit 200 includes a second gate electrode GE2, a second source electrode SE2, and a second drain electrode DE2.

[0164] As Figure 3 and Figure 4F shown, the third switching element T3 of the pixel circuit unit 200 includes a third gate electrode GE3, a third source electrode SE3, and a third drain electrode DE3.

[0165] As Figure 3 and Figure 4F shown, the fourth switching element T4 of the pixel circuit unit 200 includes a fourth gate electrode GE4, a fourth source electrode SE4, and a fourth drain electrode DE4.

[0166] As Figure 3 and Figure 4F shown, the fifth switching element T5 of the pixel circuit unit 200 includes a fifth gate electrode GE5, a fifth source electrode SE5, and a fifth drain electrode DE5.

[0167] As Figure 3 and Figure 4F shown, the sixth switching element T6 of the pixel circuit unit 200 includes a sixth gate electrode GE6, a sixth source electrode SE6, and a sixth drain electrode DE6.

[0168] As Figure 3 and Figure 4FAs shown, the seventh switching element T7 of the pixel circuit unit 200 includes a seventh gate electrode GE7, a seventh source electrode SE7, and a seventh drain electrode DE7.

[0169] Figure 5 The substrate 100 shown in may include at least two layers. In an exemplary embodiment, for example, the substrate 100 may include a base layer 110, a first layer 111, a second layer 112, a third layer 113, and a fourth layer 114 arranged along the Z-axis direction. The first layer 111 is located between the base layer 110 and the second layer 112, the second layer 112 is located between the first layer 111 and the third layer 113, the third layer 113 is located between the second layer 112 and the fourth layer 114, and the fourth layer 114 is located between the third layer 113 and the buffer layer 120 of the pixel circuit unit 200.

[0170] The thickness of the first layer 111 may be greater than the thickness of the second layer 112. As used herein, thickness means the dimension measured in the Z-axis direction.

[0171] The thickness of the third layer 113 may be greater than the thickness of the fourth layer 114. As used herein, thickness means the dimension measured in the Z-axis direction.

[0172] The first layer 111 and the third layer 113 may have substantially equal thicknesses. As used herein, thickness means the dimension measured in the Z-axis direction.

[0173] The second layer 112 and the fourth layer 114 may have substantially equal thicknesses. As used herein, thickness means the dimension measured in the Z-axis direction.

[0174] The base layer 110 may be a glass substrate or a film.

[0175] In an exemplary embodiment, for example, the first layer 111 may include glass or transparent plastic, or be composed of glass or transparent plastic. Additionally, the first layer 111 may include an organic material. In an exemplary embodiment, for example, the first layer 111 may include one of polyimide film (kapton), polyethersulfone ("PES"), polycarbonate ("PC"), polyimide ("PI"), polyethylene terephthalate ("PET"), polyethylene naphthalate ("PEN"), polyacrylate ("PAR"), fiber reinforced plastic ("FRP"), etc.

[0176] The second layer 112 may include an inorganic material. In an exemplary embodiment, for example, the second layer 112 may include a silicon nitride (SiN x ) layer, a silicon oxide (SiO 2 ) layer, and a silicon oxynitride (SiO x N y), or one of the silicon nitride (SiN x ), silicon oxide (SiO 2 ), or silicon oxynitride (SiO x N y ).

[0177] The third layer 113 may include substantially the same materials as those included in the first layer 111 above, or may be composed of substantially the same materials as those included in the first layer 111 above.

[0178] The fourth layer 114 may include substantially the same materials as those included in the second layer 112 above, or may be composed of substantially the same materials as those included in the second layer 112 above.

[0179] As Figure 5 shown, the pixel circuit unit 200 is disposed on the substrate 100. In an exemplary embodiment, for example, the pixel circuit unit 200 is disposed on the fourth layer 114 of the substrate 100.

[0180] For example, the pixel circuit unit 200 may include a buffer layer 120, a semiconductor layer 321, a gate insulating layer 140, a first gate electrode GE1, a second gate electrode GE2, a third gate electrode GE3, a fourth gate electrode GE4, a fifth gate electrode GE5, a sixth gate electrode GE6, a seventh gate electrode GE7, an (n - 1)th scan line SLn - 1, an nth scan line SLn, an (n + 1)th scan line SLn + 1, an emission control line EL, a first insulating intermediate layer 150, an initialization line IL, a capacitor electrode 201, a second insulating intermediate layer 160, a first connection electrode 701, a second connection electrode 702, a third connection electrode 703, a data line DL, a high potential line VDL, and a planarization layer 180.

[0181] The buffer layer 120 is disposed on the fourth layer 114 of the substrate 100. The buffer layer 120 may be disposed above the entire surface of the fourth layer 114. In an exemplary embodiment, for example, the buffer layer 120 may overlap the entire surface of the fourth layer 114.

[0182] The buffer layer 120 is used to prevent the penetration of unwanted elements and to planarize the surface thereunder, and may include suitable materials for planarization and / or prevention of penetration. In an exemplary embodiment, for example, the buffer layer 120 may include one of the following: silicon nitride (SiN x ), silicon oxide (SiO 2 ), or silicon oxynitride (SiO x N y ). However, the buffer layer 120 is not always necessary and may be omitted based on the type of the substrate 100 and its process conditions.

[0183] As Figure 5 shown, the semiconductor layer 321 is disposed on the buffer layer 120.

[0184] As Figure 4A shown, the semiconductor layer 321 provides channel regions CH1, CH2, CH3, CH4, CH5, CH6, and CH7 for the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, the sixth switching element T6, and the seventh switching element T7, respectively. Additionally, the semiconductor layer 321 provides source electrodes SE1, SE2, SE3, SE4, SE5, SE6, and SE7 and drain electrodes DE1, DE2, DE3, DE4, DE5, DE6, and DE7 for the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, the sixth switching element T6, and the seventh switching element T7, respectively.

[0185] To this end, the semiconductor layer 321 may include a first channel region CH1, a second channel region CH2, a third channel region CH3, a fourth channel region CH4, a fifth channel region CH5, a sixth channel region CH6, a seventh channel region CH7, a first source electrode SE1, a second source electrode SE2, a third source electrode SE3, a fourth source electrode SE4, a fifth source electrode SE5, a sixth source electrode SE6, a seventh source electrode SE7, a first drain electrode DE1, a second drain electrode DE2, a third drain electrode DE3, a fourth drain electrode DE4, a fifth drain electrode DE5, a sixth drain electrode DE6, and a seventh drain electrode DE7.

[0186] The first source electrode SE1, the second drain electrode DE2, and the fifth drain electrode DE5 are connected to each other. In an exemplary embodiment, for example, the first source electrode SE1, the second drain electrode DE2, and the fifth drain electrode DE5 may be provided integrally as an integrally provided, single, and indivisible unit.

[0187] The first drain electrode DE1, the third source electrode SE3, and the sixth source electrode SE6 are connected to each other. In an exemplary embodiment, for example, the first drain electrode DE1, the third source electrode SE3, and the sixth source electrode SE6 may be provided integrally as an integrally provided, single, and indivisible unit.

[0188] The third drain electrode DE3 and the fourth drain electrode DE4 are connected to each other. In an exemplary embodiment, for example, the third drain electrode DE3 and the fourth drain electrode DE4 may be provided integrally as an integrally provided, single, and indivisible unit.

[0189] The sixth drain electrode DE6 and the seventh source electrode SE7 are connected to each other. In an exemplary embodiment, for example, the sixth drain electrode DE6 and the seventh source electrode SE7 may be integrally provided as an integrally provided, single, integrated, and indivisible unit.

[0190] In an exemplary embodiment, the semiconductor layer 321 may include a polycrystalline silicon layer, an amorphous silicon layer, and an oxide semiconductor such as indium gallium zinc oxide ("IGZO") or indium zinc tin oxide ("IZTO"). In an exemplary embodiment, for example, in the case where the semiconductor layer 321 includes a polycrystalline silicon layer, the semiconductor layer 321 may include a channel region not doped with impurities, and a source electrode and a drain electrode doped with impurities on opposite sides of the channel region.

[0191] like Figure 5 As shown in FIG. 1 , the gate insulating layer 140 is disposed on the semiconductor layer 321 and the buffer layer 120. In an exemplary embodiment, for example, the gate insulating layer 140 may include tetraethyl orthosilicate (“TEOS”), silicon nitride (SiN x ) and silicon oxide (SiO 2 In an exemplary embodiment, for example, the gate insulating layer 140 may have a double-layer structure in which SiN having a thickness of about 40 nanometers (nm) is sequentially stacked. x layer and a TEOS layer having a thickness of about 80 nm.

[0192] like Figure 5 As shown in FIG. 1 , the first gate electrode GE1 is disposed on the gate insulating layer 140 . In an exemplary embodiment, for example, the first gate electrode GE1 is located between the gate insulating layer 140 and the first insulating interlayer 150 .

[0193] Although not in Figure 5 , but the second gate electrode GE2, the third gate electrode GE3, the fourth gate electrode GE4, the fifth gate electrode GE5, the sixth gate electrode GE6 and the seventh gate electrode GE7 are also arranged on the gate insulating layer 140. In an exemplary embodiment, for example, the second gate electrode GE2, the third gate electrode GE3, the fourth gate electrode GE4, the fifth gate electrode GE5, the sixth gate electrode GE6 and the seventh gate electrode GE7 are located between the gate insulating layer 140 and the first insulating interlayer 150.

[0194] Although not in Figure 5 , but the scan lines and the emission control lines are also arranged on the gate insulating layer 140. In an exemplary embodiment, for example, the (n-1)th scan line SLn-1, the nth scan line SLn, the (n+1)th scan line SLn+1, and the emission control line EL are located between the gate insulating layer 140 and the first insulating interlayer 150.

[0195] As shown in Figure 3 and Figure 4F The first gate electrode GE1 overlaps with the first channel region CH1 of the semiconductor layer 321, the second gate electrode GE2 overlaps with the second channel region CH2 of the semiconductor layer 321, the third gate electrode GE3 overlaps with the third channel region CH3 of the semiconductor layer 321, the fourth gate electrode GE4 overlaps with the fourth channel region CH4 of the semiconductor layer 321, the fifth gate electrode GE5 overlaps with the fifth channel region CH5 of the semiconductor layer 321, the sixth gate electrode GE6 overlaps with the sixth channel region CH6 of the semiconductor layer 321, and the seventh gate electrode GE7 overlaps with the seventh channel region CH7 of the semiconductor layer 321.

[0196] As shown in Figure 4B and Figure 4F The fourth gate electrode GE4 is connected to the (n - 1)-th scan line SLn - 1, and in this exemplary embodiment, the fourth gate electrode GE4 may be defined by a part of the (n - 1)-th scan line SLn - 1. In the exemplary embodiment, for example, the part of the (n - 1)-th scan line SLn - 1 overlapping with the semiconductor layer 321 may correspond to the fourth gate electrode GE4.

[0197] As shown in Figure 4B and Figure 4F The third gate electrode GE3 is connected to the n-th scan line SLn, and in this exemplary embodiment, the third gate electrode GE3 may be defined by a part of the n-th scan line SLn. In the exemplary embodiment, for example, the part of the n-th scan line SLn overlapping with the semiconductor layer 321 may correspond to the third gate electrode GE3.

[0198] As shown in Figure 4B and Figure 4F The seventh gate electrode GE7 is connected to the (n + 1)-th scan line SLn + 1, and in this exemplary embodiment, the seventh gate electrode GE7 may be defined by a part of the (n + 1)-th scan line SLn + 1. In the exemplary embodiment, for example, the part of the (n + 1)-th scan line SLn + 1 overlapping with the semiconductor layer 321 may correspond to the seventh gate electrode GE7.

[0199] As shown in Figure 4B and Figure 4F The fifth gate electrode GE5 and the sixth gate electrode GE6 are commonly connected to an emission control line EL, and in this exemplary embodiment, the fifth gate electrode GE5 and the sixth gate electrode GE6 may be part of the emission control line EL. In the exemplary embodiment, for example, the two parts of the emission control line EL overlapping with the semiconductor layer 321 may respectively correspond to the fifth gate electrode GE5 and the sixth gate electrode GE6.

[0200] In an exemplary embodiment, for example, a scan line (e.g., at least one of the (n - 1)th scan line SLn-1, the nth scan line SLn, and the (n + 1)th scan line SLn+1) may include at least one of aluminum (Al) or an aluminum alloy, silver (Ag) or a silver alloy, copper (Cu) or a copper alloy, and molybdenum (Mo) or a molybdenum alloy. In an alternative exemplary embodiment, for example, the scan line may include chromium (Cr), tantalum (Ta), and / or titanium (Ti). In an exemplary embodiment, the scan line may have a multilayer structure, where the multilayer structure includes at least two conductive layers having different physical properties from each other.

[0201] The first gate electrode GE1, the second gate electrode GE2, the third gate electrode GE3, the fourth gate electrode GE4, the fifth gate electrode GE5, the sixth gate electrode GE6, and the seventh gate electrode GE7 may include substantially the same material and have a structure substantially the same as that of the above-described scan line (e.g., a multilayer structure). Each of the gate electrodes GE1, GE2, GE3, GE4, GE5, GE6, and GE7 and the scan line may be formed substantially simultaneously by substantially the same process.

[0202] In addition, the emission control line EL may include substantially the same material as that of the above-described scan line (e.g., SLn) and have a structure substantially the same as that of the above-described scan line (e.g., SLn) (e.g., a multilayer structure). The emission control line EL and the scan line may be provided substantially simultaneously by substantially the same process.

[0203] As Figure 5 shown, the first insulating intermediate layer 150 is disposed on the first gate electrode GE1 and the gate insulating layer 140. The thickness of the first insulating intermediate layer 150 may be greater than the thickness of the gate insulating layer 140. The first insulating intermediate layer 150 may include substantially the same material as that included in the above-described gate insulating layer 140.

[0204] Although not shown in Figure 5 it, the first insulating intermediate layer 150 is also disposed on the second gate electrode GE2, the third gate electrode GE3, the fourth gate electrode GE4, the fifth gate electrode GE5, the sixth gate electrode GE6, the seventh gate electrode GE7, each scan line (e.g., scan lines SLn-1, SLn, SLn+1), and the emission control line EL.

[0205] As Figure 5As shown, the capacitor electrode 201 is disposed on the first insulating intermediate layer 150. In an exemplary embodiment, for example, the capacitor electrode 201 is located between the first insulating intermediate layer 150 and the second insulating intermediate layer 160. The capacitor electrode 201 and the above-described first gate electrode GE1 together define a storage capacitor Cst. In an exemplary embodiment, for example, the first gate electrode GE1 corresponds to the first electrode of the storage capacitor Cst, and the capacitor electrode 201 corresponds to the second electrode of the storage capacitor Cst. In an exemplary embodiment, for example, the portion of the first gate electrode GE1 overlapping with the capacitor electrode 201 corresponds to the first electrode of the storage capacitor Cst, and the portion of the capacitor electrode 201 overlapping with the first gate electrode GE1 corresponds to the second electrode of the storage capacitor Cst.

[0206] The initialization line IL is also disposed on the first insulating intermediate layer 150. In an exemplary embodiment, for example, the initialization line IL is located between the first insulating intermediate layer 150 and the second insulating intermediate layer 160.

[0207] As Figure 3 and Figure 4C shown, the capacitor electrode 201 has a hole 30. In an exemplary embodiment, for example, the hole 30 may have a quadrilateral shape. However, the shape of the hole 30 is not limited to a quadrilateral. In other exemplary embodiments, for example, the hole 30 may have at least one of various shapes such as a circular shape or a triangular shape.

[0208] As Figure 3 and Figure 4C shown, the capacitor electrodes 201 of adjacent pixels may be connected to each other. In other words, the capacitor electrodes 201 of pixels adjacent to each other in the X-axis direction may be provided as a single integrated and indivisible unit provided integrally.

[0209] As Figure 5 shown, the second insulating intermediate layer 160 is disposed on the capacitor electrode 201, the initialization line IL, and the first insulating intermediate layer 150. The second insulating intermediate layer 160 may have a thickness greater than the thickness of the gate insulating layer 140. The second insulating intermediate layer 160 may include a material substantially the same as the material included in the above-described gate insulating layer 140.

[0210] As Figure 5 shown, the first connection electrode 701, the second connection electrode 702, the high potential line VDL, and the data line DL are disposed on the second insulating intermediate layer 160. In an exemplary embodiment, for example, the first connection electrode 701, the second connection electrode 702, the high potential line VDL, and the data line DL are located between the second insulating intermediate layer 160 and the planarization layer 180.

[0211] Although not shown in Figure 5 is shown, but the third connection electrode 703 (refer to Figure 3 and Figure 4D ) is also disposed on the second insulating intermediate layer 160. In an exemplary embodiment, for example, the third connection electrode 703 is located between the second insulating intermediate layer 160 and the planarization layer 180.

[0212] As Figure 5 shown, the first connection electrode 701 is connected to the sixth drain electrode DE6 through the first contact hole 11, wherein the first contact hole 11 is defined to pass through the second insulating intermediate layer 160, the first insulating intermediate layer 150, and the gate insulating layer 140.

[0213] As Figure 5 shown, the second connection electrode 702 is connected to the first gate electrode GE1 through the second contact hole 12, wherein the second contact hole 12 is defined to pass through the second insulating intermediate layer 160 and the first insulating intermediate layer 150. Additionally, as Figure 3 , Figure 4A and Figure 4D shown, the second connection electrode 702 is connected to the third drain electrode DE3 through the third contact hole 13. The third contact hole 13 is defined to pass through the second insulating intermediate layer 160, the first insulating intermediate layer 150, and the gate insulating layer 140 to expose the third drain electrode DE3.

[0214] As Figure 3 , Figure 4A and Figure 4D shown, the third connection electrode 703 is connected to the fourth source electrode SE4 through the fourth contact hole 14. The fourth contact hole 14 is defined to pass through the second insulating intermediate layer 160, the first insulating intermediate layer 150, and the gate insulating layer 140 to expose the fourth source electrode SE4. Additionally, as Figure 3 , Figure 4C and Figure 4D shown, the third connection electrode 703 is connected to the initialization line IL through the fifth contact hole 15. The fifth contact hole 15 is defined to pass through the second insulating intermediate layer 160 to expose the initialization line IL.

[0215] As Figure 5 shown, the high potential line VDL is connected to the capacitor electrode 201 through the sixth contact hole 16, wherein the sixth contact hole 16 is defined to pass through the second insulating intermediate layer 160. Additionally, as Figure 3 , Figure 4A and Figure 4D shown, the high potential line VDL is connected to the fifth source electrode SE5 through the seventh contact hole 17. The seventh contact hole 17 is defined to pass through the second insulating intermediate layer 160, the first insulating intermediate layer 150, and the gate insulating layer 140 to expose the fifth source electrode SE5.

[0216] As Figure 3 , Figure 4A and Figure 4D shown in, the data line DL is connected to the second source electrode SE2 through the eighth contact hole 18. The eighth contact hole 18 is defined to pass through the second insulating intermediate layer 160, the first insulating intermediate layer 150, and the gate insulating layer 140 to expose the second source electrode SE2.

[0217] In an exemplary embodiment, for example, the data line DL may include a refractory metal such as molybdenum, chromium, tantalum, and titanium or an alloy thereof. The data line DL may have a multilayer structure including a refractory metal layer and a low-resistance conductive layer. Examples of the multilayer structure may include a bilayer structure or a trilayer structure, where the bilayer structure includes a lower layer of chromium or molybdenum (alloy) and an upper layer of aluminum (alloy), and the trilayer structure includes a lower layer of molybdenum (alloy), an intermediate layer of aluminum (alloy), and an upper layer of molybdenum (alloy). In an exemplary embodiment, in addition to the above materials, the data line DL may include any suitable metal or conductor.

[0218] The first connection electrode 701, the second connection electrode 702, the third connection electrode 703, and the high-potential line VDL may include materials substantially the same as those of the data line DL and have a structure substantially the same as that of the data line DL (e.g., a multilayer structure). Each of the first connection electrode 701, the second connection electrode 702, the third connection electrode 703, the high-potential line VDL, and the data line DL may be provided substantially simultaneously by substantially the same process.

[0219] As Figure 5 shown in, a planarization layer 180 is disposed on the first connection electrode 701, the second connection electrode 702, the third connection electrode 703, the high-potential line VDL, and the data line DL.

[0220] The planarization layer 180 is used to eliminate the height difference therebelow to improve the light-emitting efficiency of the LED to be disposed thereon. In an exemplary embodiment, for example, the planarization layer 180 may include at least one of polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene (“BCB”).

[0221] The LED may be an OLED. As Figure 5 shown in, the LED includes a light-emitting layer 512, an anode PE (hereinafter referred to as “pixel electrode”), and a cathode 613 (hereinafter referred to as “common electrode”).

[0222] The light-emitting layer 512 may include a low-molecular-weight organic material or a high-molecular-weight organic material. Although not shown, at least one of a hole injection layer ("HIL") and a hole transport layer ("HTL") may be disposed between the pixel electrode PE and the light-emitting layer 512, and at least one of an electron transport layer ("ETL") and an electron injection layer ("EIL") may be disposed between the light-emitting layer 512 and the common electrode 613.

[0223] As Figure 5 shown, the pixel electrode PE is disposed on the planarization layer 180. A part or all of the pixel electrode PE is located in the light-emitting region 900. That is, the pixel electrode PE is positioned to correspond to the light-emitting region 900 defined by the light-blocking layer 190 which will be described below. The pixel electrode PE is connected to the first connection electrode 701 through the ninth contact hole 19, where the ninth contact hole 19 is defined to pass through the planarization layer 180.

[0224] As Figure 3 and Figure 4E shown, for example, the pixel electrode PE may have a rhombus shape. In an alternative exemplary embodiment, in addition to the rhombus shape, the pixel electrode PE may have one of various shapes, such as a quadrilateral shape.

[0225] As Figure 5 shown, the light-blocking layer 190 is disposed on the pixel electrode PE and the planarization layer 180. An opening 900 is defined through the light-blocking layer 190, and the opening 900 corresponds to the light-emitting region 900. As Figure 3 and Figure 4G shown, for example, the light-emitting region 900 may have a rhombus shape. In an alternative exemplary embodiment, in addition to the rhombus shape, the light-emitting region 900 may have one of various shapes, such as a quadrilateral shape. The size of the light-emitting region 900 may be smaller than the size of the above-described pixel electrode PE. At least a part of the pixel electrode PE is located at the light-emitting region 900. In this exemplary embodiment, the whole of the light-emitting region 900 overlaps with the pixel electrode PE.

[0226] In an exemplary embodiment, the light-blocking layer 190 may include a resin, such as a polyacrylate resin and a polyimide resin.

[0227] The spacer 422 is disposed on the light-blocking layer 190. The spacer 422 may include a material substantially the same as the material included in the light-blocking layer 190, or may be made of a material substantially the same as the material included in the light-blocking layer 190. The spacer 422 is used to substantially minimize the height difference between the layer located in the display region 100a of the substrate 100 and the layer located in the non-display region 100b of the substrate 100.

[0228] The light-emitting layer 512 is disposed on the pixel electrode PE in the light-emitting region 900, and the common electrode 613 is disposed on the light-blocking layer 190 and the light-emitting layer 512.

[0229] The pixel electrode PE and the common electrode 613 may be provided as one of a transmissive electrode, a semi-transmissive reflective electrode, and a reflective electrode.

[0230] In one exemplary embodiment, the transmissive electrode may include a transparent conductive oxide (“TCO”). For example, such a TCO may include at least one of indium tin oxide (“ITO”), indium zinc oxide (“IZO”), antimony tin oxide (“ATO”), aluminum zinc oxide (“AZO”), zinc oxide (“ZnO”), and combinations thereof.

[0231] In one exemplary embodiment, the semi-transmissive reflective electrode and the reflective electrode may include a metal, such as magnesium (Mg), silver (Ag), gold (Au), calcium (Ca), lithium (Li), chromium (Cr), aluminum (Al), and copper (Cu) or alloys thereof. In such an exemplary embodiment, whether the electrode is semi-transmissive reflective or reflective depends on the thickness of the electrode. Generally, for example, the semi-transmissive reflective electrode has a thickness of about 200 nm or less, and the reflective electrode has a thickness of about 300 nm or more. As the thickness of the semi-transmissive reflective electrode decreases, the light transmittance and resistance increase. As the thickness of the semi-transmissive reflective electrode increases, the light transmittance decreases.

[0232] In such an exemplary embodiment, the semi-transmissive reflective electrode and the reflective electrode may have a multilayer structure, where the multilayer structure includes a metal layer containing a metal or a metal alloy and a TCO layer stacked on the metal layer.

[0233] The sealing unit 750 is disposed on the common electrode 613. The sealing unit 750 may include a transparent insulating substrate containing glass, transparent plastic, etc. Additionally, the sealing unit 750 may be provided with a thin film encapsulation structure, where in the thin film encapsulation structure, one or more inorganic layers and one or more organic layers are alternately stacked in the Z-axis direction. In an exemplary embodiment, for example, as Figure 5 shown, the sealing unit 750 may include a lower inorganic layer 751, an organic layer 755, and an upper inorganic layer 752. The organic layer 755 is located between the lower inorganic layer 751 and the upper inorganic layer 752. Among the lower inorganic layer 751, the organic layer 755, and the upper inorganic layer 752, the organic layer 755 has the largest thickness. The lower inorganic layer 751 and the upper inorganic layer 752 may have substantially equal thicknesses.

[0234] The lower inorganic layer 751 and the upper inorganic layer 752 may include materials substantially the same as those included in the second layer 112 described above, or be composed of materials substantially the same as those included in the second layer 112 described above.

[0235] The organic layer 755 may include, or may be composed of, substantially the same materials as those included in the first layer 111. Additionally, the organic layer 755 may include monomers.

[0236] Figure 6 is a cross-sectional view taken along line II-II', and Figure 3 is a view of the enlarged portion A. However, the sealing unit 750 and the common electrode 613 are omitted in Figure 7 is an enlarged Figure 6 view of portion A. However, the sealing unit 750 and the common electrode 613 are omitted in Figure 7 In [reference], the sealing unit 750 and the common electrode 613 are omitted.

[0237] As shown in Figure 6 a part of the sealing unit 750 is inserted into the substrate 100. In an exemplary embodiment, for example, the sealing unit 750 includes a cover portion 750a and an extension portion 750b extending from the cover portion 750a toward the substrate 100. The extension portion 750b is inserted into the substrate 100.

[0238] For this purpose, holes or recesses are defined in the substrate 100, the pixel circuit unit 200, and the light-blocking layer 190 at portions corresponding to the extension portion 750b of the sealing unit 750. In an exemplary embodiment, as shown in Figure 6 and Figure 7 for example, a first hole 21 and a recess 20 are defined in the substrate 100 and are positioned to correspond to the extension portion 750b, a second hole 22 is defined in the pixel circuit unit 200 and is positioned to correspond to the extension portion 750b, and a third hole 23 is defined in the light-blocking layer 190 and is positioned to correspond to the extension portion 750b.

[0239] The recess 20 of the substrate 100 may be located, for example, in the third layer 113 of the substrate 100. The recess 20 is located in a layer below the switching elements (e.g., at least one of the switching elements T1, T2, T3, T4, T5, T6, and T7) of the pixel circuit unit 200. In an exemplary embodiment, for example, the recess 20 is positioned closer to the base layer 110 than the switching elements. As a more specific example, the distance between the recess 20 and the base layer 110 measured in the Z-axis direction is less than the distance between the semiconductor layer 321 of the switching element and the base layer 110 measured in the Z-axis direction.

[0240] For example, the first hole 21 of the substrate 100 may be located in the fourth layer 114 of the substrate 100.

[0241] The first hole 21, the second hole 22, the third hole 23, and the recess 20 are positioned to correspond to each other. Additionally, two adjacent ones of the first hole 21, the second hole 22, the third hole 23, and the recess 20 are connected to each other.

[0242] The first hole 21 may be located between the recess 20 and the second hole 22.

[0243] The recess 20 has a width (or diameter) that gradually increases in a direction from the third layer 113 toward the fourth layer 114 (e.g., the Z-axis direction). As Figure 7 shown, the width 20d (or diameter) of the recess 20 is a value measured in the X-axis direction (or Y-axis direction). As used herein, the width 20d (or diameter) of the recess 20 means the maximum width (or maximum diameter) or the average width (or average diameter) of the recess 20.

[0244] At least one of the inner walls W1 and W2 of the recess 20 facing each other is inclined at a predetermined angle with respect to the interfaces S1 and S2 between the third layer 113 and the fourth layer 114. In an exemplary embodiment, for example, the angles θ1 and θ2 defined between at least one of the inner walls W1 and W2 of the recess 20 facing each other and the interfaces S1 and S2 are obtuse angles. As a more specific example, the angle θ1 defined between the inner wall W1 and the interface S1 adjacent to the inner wall W1 is an obtuse angle.

[0245] The first hole 21 has a width (or diameter) that gradually increases in the Z-axis direction. The width 21d (or diameter) of the first hole 21 is a value measured in the X-axis direction (or Y-axis direction). In this exemplary embodiment, the width 21d (or diameter) of the first hole 21 means the maximum width (or maximum diameter) or the average width (or average diameter) of the first hole 21.

[0246] The second hole 22 has a width (or diameter) that gradually increases in the Z-axis direction. The width 22d (or diameter) of the second hole 22 is a value measured in the X-axis direction (or Y-axis direction). In this exemplary embodiment, the width 22d (or diameter) of the second hole 22 means the maximum width (or maximum diameter) or the average width (or average diameter) of the second hole 22.

[0247] The second hole 22 refers to a hole that continuously penetrates through the insulating layers included in the pixel circuit unit 200. In an exemplary embodiment, for example, the second hole 22 means a hole that continuously penetrates through the buffer layer 120, the gate insulating layer 140, the first insulating intermediate layer 150, the second insulating intermediate layer 160, and the planarization layer 180. In an exemplary embodiment, for example, the second hole 22 may include a hole 22-1 (hereinafter referred to as a "buffer hole") defined as penetrating through the buffer layer 120, a hole 22-2 (hereinafter referred to as a "gate hole") defined as penetrating through the gate insulating layer 140, a hole 22-3 (hereinafter referred to as a "first intermediate layer hole") defined as penetrating through the first insulating intermediate layer 150, a hole 22-4 (hereinafter referred to as a "second intermediate layer hole") defined as penetrating through the second insulating intermediate layer 160, and a hole 22-5 (hereinafter referred to as a "planarization hole") defined as penetrating through the planarization layer 180.

[0248] The buffer hole 22-1, the gate hole 22-2, the first intermediate layer hole 22-3, the second intermediate layer hole 22-4, and the planarization hole 22-5 may have different widths (or diameters) from each other. In an exemplary embodiment, for example, the holes 22-1, 22-2, 22-3, 22-4, and 22-5 included in the second hole 22 may have widths (or diameters) that increase as they are farther from the substrate 100 in the Z-axis direction. As a specific example, among the buffer hole 22-1, the gate hole 22-2, the first intermediate layer hole 22-3, the second intermediate layer hole 22-4, and the planarization hole 22-5, the planarization hole 22-5 may have the largest width (or the largest diameter). The width (or diameter) of each hole included in the second hole 22 is a value measured in the X-axis direction (or the Y-axis direction). In such an exemplary embodiment, the width (or diameter) of each of the holes 22-1, 22-2, 22-3, 22-4, and 22-5 included in the second hole 22 corresponds to the largest width (or the largest diameter) or the average width (or the average diameter).

[0249] Each of the holes 22-1, 22-2, 22-3, 22-4, and 22-5 included in the second hole 22 itself may have a width (or diameter) that gradually increases in the Z-axis direction. In an exemplary embodiment, for example, the buffer hole 22-1 has a width (or diameter) that gradually increases in the Z-axis direction, the gate hole 22-2 has a width (or diameter) that gradually increases in the Z-axis direction, the first intermediate layer hole 22-3 has a width (or diameter) that gradually increases in the Z-axis direction, the second intermediate layer hole 22-4 has a width (or diameter) that gradually increases in the Z-axis direction, and the planarization hole 22-5 has a width (or diameter) that gradually increases in the Z-axis direction.

[0250] The third hole 23 may have a width (or diameter) that gradually increases in the Z-axis direction. The width 23d (or diameter) of the third hole 23 is a value measured in the X-axis direction (or Y-axis direction). In this exemplary embodiment, the width 23d (or diameter) of the third hole 23 means the maximum width or average width of the second hole 22.

[0251] The width 20d (or diameter) of the recess 20 is greater than the width 21d (or diameter) of the first hole 21. As Figure 7 shown, for example, the cross-sections of the recess 20 and the first hole 21 may have an anchor shape. In this exemplary embodiment, for example, the cross-sections of the recess 20 and the extension 750b inserted into the first hole 21 may also have an anchor shape.

[0252] From Figure 7 the planar view of, the first hole 21 is surrounded by the recess 20. Additionally, from Figure 7 the planar view of, the first hole 21 and the recess 20 overlap each other.

[0253] From Figure 7 the planar view of, the first hole 21, the second hole 22, and the recess 20 are surrounded by the third hole 23.

[0254] The width 22d (or diameter) of the second hole 22 is greater than the width 21d (or diameter) of the first hole 21.

[0255] The width 23d (or diameter) of the third hole 23 is greater than the width 22d (or diameter) of the second hole 22.

[0256] The extension 750b of the sealing unit 750 described above is inserted (or buried) in the recess 20, the first hole 21, the second hole 22, and the third hole 23 having such a structure. In an exemplary embodiment, for example, the extension 750b sequentially passes through the third hole 23, the second hole 22, and the first hole 21 to be inserted into the recess 20. In this exemplary embodiment, since the width 20d (or diameter) of the recess 20 is greater than the width 21d (or diameter) of the first hole 21, the extension 750b inserted into the recess 20, the first hole 21, the second hole 22, and the third hole 23 is not easily separated in the Z-axis direction. Accordingly, the coupling force between the sealing unit 750 and the substrate 100 and the coupling force between the sealing unit 750 and the structure therebelow can be improved.

[0257] In an exemplary embodiment, the edge of the sealing unit 750 is located at the edge of the substrate 100, and the sealing unit 750 includes a lower inorganic layer 751 and an upper inorganic layer 752 that are in contact with each other at the edge of the substrate 100. That is, the sealing unit 750 located at the edge of the substrate 100 does not include an organic layer. In addition, the planarization layer 180 is not located at the edge of the substrate 100. The edge of the sealing unit 750 is in contact with the edge of the substrate 100 to improve the bonding force between the sealing unit 750 and the substrate 100. In an exemplary embodiment, for example, the lower inorganic layer 751 and the upper inorganic layer 752 of the sealing unit 750 may be in contact with the second insulating intermediate layer 160 located at the edge of the substrate 100. In an exemplary embodiment, when the edge of the sealing unit 750 increases, the bonding force between the sealing unit 750 and the substrate 100 is improved, while the dead space of the display device 5555 increases. According to an exemplary embodiment of the present invention, since the bonding force between the sealing unit 750 and the substrate 100 can be improved by the extension portion 750b of the sealing unit 750, the length of the edge of the sealing unit 750 can be reduced. Accordingly, the dead space of the display device 5555 can be substantially minimized.

[0258] The above-described recess 20, first hole 21, second hole 22, and third hole 23 may be located in the display area 100a of the substrate 100. In an exemplary embodiment, for example, when the entire hole including the recess 20, first hole 21, second hole 22, and third hole 23 is defined as a coupling recess 220, the coupling recess 220 and the extension portion 750b may be located in the display area 100a of the substrate 100.

[0259] As Figure 3 shown, the extension portion 750b and the coupling recess 220 in the display area 100a may be located between the high potential line VDL and the data line DL adjacent to each other.

[0260] Figure 8 To show a detailed plan view of a display device including Figure 1 the plurality of pixels shown in and the lines connected thereto.

[0261] In Figure 8 a plurality of pixels are shown, and four pixels commonly connected to the m-th emission control line ELm are respectively referred to as a first pixel PX1, a second pixel PX2, a third pixel PX3, and a fourth pixel PX4. In this exemplary embodiment, four pixels commonly connected to the (m + 1)-th emission control line ELm+1 are respectively referred to as a fifth pixel PX5, a sixth pixel PX6, a seventh pixel PX7, and an eighth pixel PX8.

[0262] Figure 8 The second pixel PX2 of Figure 3 The pixels PX are substantially the same. The first pixel PX1, the third pixel PX3, the fourth pixel PX4, the fifth pixel PX5, the sixth pixel PX6, the seventh pixel PX7, and the eighth pixel PX8 may have a configuration substantially the same as that of the Figure 3 pixels PX.

[0263] The first pixel PX1, the third pixel PX3, the fifth pixel PX5, and the seventh pixel PX7 may emit light having substantially the same color as each other. In one exemplary embodiment, for example, each of the first pixel PX1, the third pixel PX3, the fifth pixel PX5, and the seventh pixel PX7 may be a green pixel that emits green light.

[0264] The second pixel PX2 and the eighth pixel PX8 may emit light having substantially the same color as each other. In one exemplary embodiment, for example, each of the second pixel PX2 and the eighth pixel PX8 may be a red pixel that emits red light.

[0265] The fourth pixel PX4 and the sixth pixel PX6 may emit light having substantially the same color as each other. In one exemplary embodiment, for example, each of the fourth pixel PX4 and the sixth pixel PX6 may be a blue pixel that emits blue light.

[0266] Four adjacent pixels may define a unit pixel. In one exemplary embodiment, for example, the first pixel PX1, the second pixel PX2, the third pixel PX3, and the sixth pixel PX6 arranged adjacent to each other together define a unit pixel (hereinafter referred to as the "first unit pixel"). In this exemplary embodiment, the third pixel PX3, the fourth pixel PX4, the eighth pixel PX8, and another green pixel (not shown) arranged adjacent to each other together define another unit pixel (hereinafter referred to as the "second unit pixel"). In this exemplary embodiment, the another green pixel (not shown) is connected to the m-th emission control line ELm and is arranged adjacent to the fourth pixel PX4 and the eighth pixel PX8. The first unit pixel and the second unit pixel adjacent to each other in this way share the green pixel (e.g., the third pixel PX3) disposed between them. In this exemplary embodiment, the second pixel PX2 of the first unit pixel and the other three pixels adjacent to its upper side together define another unit pixel, and the sixth pixel PX6 of the first unit pixel and the other three pixels adjacent to its lower side together define another unit pixel. In this exemplary embodiment, the display device includes pixels having a pentile structure.

[0267] In an exemplary embodiment, each of pixels PX1 to PX8 includes a pixel electrode. In one exemplary embodiment, for example, the first pixel PX1 includes a first pixel electrode PE1, the second pixel PX2 includes a second pixel electrode PE2, the third pixel PX3 includes a third pixel electrode PE3, the fourth pixel PX4 includes a fourth pixel electrode PE4, the fifth pixel PX5 includes a fifth pixel electrode PE5, the sixth pixel PX6 includes a sixth pixel electrode PE6, the seventh pixel PX7 includes a seventh pixel electrode PE7, and the eighth pixel PX8 includes an eighth pixel electrode PE8.

[0268] Pixel electrodes included in pixels that emit light of substantially the same color may have substantially equal sizes (e.g., areas) with respect to each other. In one exemplary embodiment, for example, the first pixel electrode PE1, the third pixel electrode PE3, the fifth pixel electrode PE5, and the seventh pixel electrode PE7 of the green pixels may have substantially equal sizes with respect to each other. In such an exemplary embodiment, the second pixel electrode PE2 and the eighth pixel electrode PE8 of the red pixels may have substantially equal sizes with respect to each other. In such an exemplary embodiment, the fourth pixel electrode PE4 and the sixth pixel electrode PE6 of the blue pixels may have substantially equal sizes with respect to each other.

[0269] Among the pixel electrodes, the pixel electrodes of the green pixels may have the smallest size. In one exemplary embodiment, for example, among the first pixel electrode PE1, the second pixel electrode PE2, the third pixel electrode PE3, the fourth pixel electrode PE4, the fifth pixel electrode PE5, the sixth pixel electrode PE6, and the seventh pixel electrode PE7, the first pixel electrode PE1, the third pixel electrode PE3, the fifth pixel electrode PE5, and the seventh pixel electrode PE7 may have the smallest size.

[0270] In such an exemplary embodiment, the size of the pixel electrode of the blue pixels may be greater than the size of the pixel electrode of the red pixels. In one exemplary embodiment, for example, the size of the fourth pixel electrode PE4 may be greater than the size of the second pixel electrode PE2. In such an exemplary embodiment, the size of the fourth pixel electrode PE4 may be greater than the size of the eighth pixel electrode PE8. In such an exemplary embodiment, the size of the sixth pixel electrode PE6 may be greater than the size of the second pixel electrode PE2. In such an exemplary embodiment, the size of the sixth pixel electrode PE6 may be greater than the size of the eighth pixel electrode PE8.

[0271] In an exemplary embodiment, although not shown, each of pixels PX1, PX2, PX3, PX4, PX5, PX6, PX7, and PX8 further includes a first switching element T1, a second switching element T2, a third switching element T3, a fourth switching element T4, a fifth switching element T5, a sixth switching element T6, a seventh switching element T7, and a storage capacitor Cst. A detailed description of the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, the sixth switching element T6, the seventh switching element T7, and the storage capacitor Cst will be made with reference to Figure 3 and the related description.

[0272] In one exemplary embodiment, as Figure 8 shown, the first pixel PX1, the second pixel PX2, the third pixel PX3, and the fourth pixel PX4 are connected to the same scan line and the same emission control line. In one exemplary embodiment, for example, the first pixel PX1, the second pixel PX2, the third pixel PX3, and the fourth pixel PX4 are commonly connected to the (n - 1)th scan line SLn - 1, the nth scan line SLn, the (n + 1)th scan line SLn + 1, and the mth emission control line ELm.

[0273] In such an exemplary embodiment, the fifth pixel PX5, the sixth pixel PX6, the seventh pixel PX7, and the eighth pixel PX8 are connected to the same scan line and the same emission control line. In one exemplary embodiment, for example, the fifth pixel PX5, the sixth pixel PX6, the seventh pixel PX7, and the eighth pixel PX8 are commonly connected to the (n + 1)th scan line SLn + 1, the (n + 2)th scan line SLn + 2, the (n + 3)th scan line SLn + 3, and the (m + 1)th emission control line ELm + 1.

[0274] The first pixel PX1 and the fifth pixel PX5 are commonly connected to the same data line. In one exemplary embodiment, for example, the first pixel PX1 and the fifth pixel PX5 are commonly connected to the (r - 1)th data line DLr - 1.

[0275] The second pixel PX2 and the sixth pixel PX6 are commonly connected to the same data line. In one exemplary embodiment, for example, the second pixel PX2 and the sixth pixel PX6 are commonly connected to the rth data line DLr.

[0276] The third pixel PX3 and the seventh pixel PX7 are commonly connected to the same data line. In one exemplary embodiment, for example, the third pixel PX3 and the seventh pixel PX7 are commonly connected to the (r + 1)th data line DLr + 1.

[0277] The fourth pixel PX4 and the eighth pixel PX8 are commonly connected to the same data line. In one exemplary embodiment, for example, the fourth pixel PX4 and the eighth pixel PX8 are commonly connected to the (r + 2)-th data line DLr+2.

[0278] Hereinafter, the first pixel PX1, the second pixel PX2, the third pixel PX3, and the fourth pixel PX4 that are commonly connected to the (n - 1)-th scan line SLn-1, the n-th scan line SLn, the (n + 1)-th scan line SLn+1, and the m-th emission control line ELm are defined as a first pixel group, and the fifth pixel PX5, the sixth pixel PX6, the seventh pixel PX7, and the eighth pixel PX8 that are commonly connected to the (n + 1)-th scan line SLn+1, the (n + 2)-th scan line SLn+2, the (n + 3)-th scan line SLn+3, and the (m + 1)-th emission control line ELm+1 are defined as a second pixel group.

[0279] In an exemplary embodiment, the first pixel group and the second pixel group are connected to different emission control lines. In this exemplary embodiment, the different emission control lines are arranged adjacent to each other. In one exemplary embodiment, for example, the first pixel group is connected to the m-th emission control line ELm, and the second pixel group is connected to the (m + 1)-th emission control line ELm+1.

[0280] As Figure 8 shown, the above-described coupling recess 220 may be uniformly located in the display area 100a of the substrate 100.

[0281] As Figure 8 shown, the coupling recess 220 in the display area 100a may be located between the high potential line VDL and the (r - 1)-th data line DLr-1 adjacent to each other, between the high potential line VDL and the r-th data line DLr adjacent to each other, between the high potential line VDL and the (r + 1)-th data line DLr+1 adjacent to each other, and between the high potential line VDL and the (r + 2)-th data line DLr+2 adjacent to each other.

[0282] Similarly, the above-described extension portion 750b (refer to Figure 6 ) may be uniformly arranged in the display area 100a of the substrate 100.

[0283] The extension portion 750b in the display area 100a may be located between the high potential line VDL and the (r - 1)-th data line DLr-1 adjacent to each other, between the high potential line VDL and the r-th data line DLr adjacent to each other, between the high potential line VDL and the (r + 1)-th data line DLr+1 adjacent to each other, and between the high potential line VDL and the (r + 2)-th data line DLr+2 adjacent to each other.

[0284] Fig. 9 A cross-sectional view taken along line I-I' according to another exemplary embodiment, and Figure 3 A cross-sectional view taken along line II-II' according to another exemplary embodiment. Fig.10 A cross-sectional view taken along line I-I' according to another exemplary embodiment, and Figure 3 A cross-sectional view taken along line II-II' according to another exemplary embodiment.

[0285] As Fig. 9 and Fig.10 shown, the sealing unit 750 may further include a composite inorganic layer.

[0286] The composite inorganic layer is located on the common electrode 613 to overlap the entire surface of the substrate 100. As a specific example, the composite inorganic layer may be located between the common electrode 613 and the lower inorganic layer 751 (refer to Fig.11 ).

[0287] The composite inorganic layer may include a first inorganic layer 1-01 and a second inorganic layer 1-02 having different refractive indices from each other (refer to Fig.11 ).

[0288] Hereinafter, the composite inorganic layer according to an exemplary embodiment of the present invention will be described in detail with reference to Figures 11 to 25 .

[0289] Fig.11 is a view for magnifying Fig. 9 part A.

[0290] As Fig.11 shown, the sealing unit 750 may include a lower inorganic layer 751, an organic layer 755, an upper inorganic layer 752, and a composite inorganic layer 1000.

[0291] The composite inorganic layer 1000 may include a first inorganic layer 1-01 and a second inorganic layer 1-02 located on the first inorganic layer 1-01. The first inorganic layer 1-01 and the second inorganic layer 1-02 are arranged in the Z-axis direction.

[0292] The first inorganic layer 1-01 may be located between the common electrode 613 and the second inorganic layer 1-02, and the second inorganic layer 1-02 may be located between the first inorganic layer 1-01 and the lower inorganic layer 751.

[0293] The first inorganic layer 1-01 and the second inorganic layer 1-02 may be in contact with each other.

[0294] The first inorganic layer 1-01 has a refractive index different from that of the second inorganic layer 1-02. In an exemplary embodiment, for example, the refractive index of the first inorganic layer 1-01 may be higher than that of the second inorganic layer 1-02. The first inorganic layer 1-01 may include a material having a relatively high refractive index, and the second inorganic layer 1-02 may include a material having a relatively low refractive index.

[0295] In an exemplary embodiment, for example, the first inorganic layer 1-01 and the second inorganic layer 1-02 may include any one of inorganic materials such as TiO 2 , SiN x , AlO x , and SiO x . As a specific example, for example, the first inorganic layer 1-01 may include TiO 2 , and the second inorganic layer 1-02 may include any one of SiN 2 , AlO x , and SiO x having a refractive index lower than that of TiO x .

[0296] As another example, the first inorganic layer 1-01 may include SiN x , and the second inorganic layer 1-02 may include SiN x . In an exemplary embodiment, for example, the refractive index of SiN x may be about 1.833, and the refractive index of SiO x may be about 1.487. In an exemplary embodiment, for example, the refractive index (1.833) of SiN x and the refractive index (1.487) of SiO x may be the refractive indices at a wavelength of about 632 nm.

[0297] As another example, the first inorganic layer 1-01 may include TiO 2 , and the second inorganic layer 1-02 may include Al 2 O 3 . In an exemplary embodiment, for example, the refractive index of TiO 2 may be about 2.288, and the refractive index of Al 2 O 3 may be about 1.627. In an exemplary embodiment, for example, the refractive index (2.288) of TiO 2 and the refractive index (1.627) of Al 2 O 3 may be the refractive indices at a wavelength of about 632 nm.

[0298] The difference between the refractive index of the first inorganic layer 1-01 and the refractive index of the second inorganic layer 1-02 may be about 0.4 or greater. In an exemplary embodiment, for example, the first inorganic layer 1-01 may include TiO 2 , and the second inorganic layer 1-02 may include SiN x . For example, since TiO 2 has a refractive index of about 2.288 and SiOx has a refractive index in the range of about 1.833 to about 1.882, so the first inorganic layer 1-01 and the second inorganic layer 1-02 containing these materials can have a refractive index difference in the range of about 0.406 to about 0.455.

[0299] In one exemplary embodiment, the refractive index of the second inorganic layer 1-02 can be higher than that of the first inorganic layer 1-01. In such an exemplary embodiment, the second inorganic layer 1-02 can include TiO 2 , and the first inorganic layer 1-01 can include having a refractive index lower than that of TiO 2 SiN with a refractive index x , AlO x and SiO x any one of them.

[0300] Fig.12 is a view of part A for magnification according to another exemplary embodiment Fig. 9 of.

[0301] As Fig.12 shown, the sealing unit 750 can include a lower inorganic layer 751, an organic layer 755, an upper inorganic layer 752, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 can include a first composite inorganic layer 1001, a second composite inorganic layer 1002, a third composite inorganic layer 1003, and a fourth composite inorganic layer 1004.

[0302] The first composite inorganic layer 1001 can be located on the common electrode 613. In an exemplary embodiment, for example, the first composite inorganic layer 1001 can be located between the common electrode 613 and the second composite inorganic layer 1002.

[0303] The second composite inorganic layer 1002 can be located on the first composite inorganic layer 1001. In an exemplary embodiment, for example, the second composite inorganic layer 1002 can be located between the first composite inorganic layer 1001 and the third composite inorganic layer 1003.

[0304] The third composite inorganic layer 1003 can be located on the second composite inorganic layer 1002. In an exemplary embodiment, for example, the third composite inorganic layer 1003 can be located between the second composite inorganic layer 1002 and the fourth composite inorganic layer 1004.

[0305] The fourth composite inorganic layer 1004 can be located on the third composite inorganic layer 1003. In an exemplary embodiment, for example, the fourth composite inorganic layer 1004 can be located between the third composite inorganic layer 1003 and the lower inorganic layer 751.

[0306] The first composite inorganic layer 1001 may include a first inorganic layer 1-01 and a second inorganic layer 1-02 located on the first inorganic layer 1-01. In an exemplary embodiment, for example, the first inorganic layer 1-01 may be located on the common electrode 613, and the second inorganic layer 1-02 may be located between the first inorganic layer 1-01 and the second composite inorganic layer 1002. The first inorganic layer 1-01 and the second inorganic layer 1-02 may be in contact with each other.

[0307] The second composite inorganic layer 1002 may include a third inorganic layer 2-03 and a fourth inorganic layer 2-04 located on the third inorganic layer 2-03. In an exemplary embodiment, for example, the third inorganic layer 2-03 may be located between the second inorganic layer 1-02 and the fourth inorganic layer 2-04, and the fourth inorganic layer 2-04 may be located between the third inorganic layer 2-03 and the third composite inorganic layer 1003. The third inorganic layer 2-03 and the fourth inorganic layer 2-04 may be in contact with each other.

[0308] The third composite inorganic layer 1003 may include a fifth inorganic layer 3-05 and a sixth inorganic layer 3-06 located on the fifth inorganic layer 3-05. In an exemplary embodiment, for example, the fifth inorganic layer 3-05 may be located between the fourth inorganic layer 2-04 and the sixth inorganic layer 3-06, and the sixth inorganic layer 3-06 may be located between the fifth inorganic layer 3-05 and the fourth composite inorganic layer 1004. The fifth inorganic layer 3-05 and the sixth inorganic layer 3-06 may be in contact with each other.

[0309] The fourth composite inorganic layer 1004 may include a seventh inorganic layer 4-07 and an eighth inorganic layer 4-08 located on the seventh inorganic layer 4-07. In an exemplary embodiment, for example, the seventh inorganic layer 4-07 may be located between the sixth inorganic layer 3-06 and the eighth inorganic layer 4-08, and the eighth inorganic layer 4-08 may be located between the seventh inorganic layer 4-07 and the lower inorganic layer 751. The seventh inorganic layer 4-07 and the eighth inorganic layer 4-08 may be in contact with each other.

[0310] The first inorganic layer 1-01 has a refractive index different from that of the second inorganic layer 1-02. In an exemplary embodiment, for example, the refractive index of the first inorganic layer 1-01 may be higher than that of the second inorganic layer 1-02. The first inorganic layer 1-01 may include a material having a relatively high refractive index, and the second inorganic layer 1-02 may include a material having a relatively low refractive index.

[0311] In an exemplary embodiment, for example, the first inorganic layer 1-01 and the second inorganic layer 1-02 may include such as TiO 2 , SiN x , AlO x and SiO xOne of the inorganic materials. As a more specific example, the first inorganic layer 1-01 may include TiO 2 and the second inorganic layer 1-02 may include SiN 2 having a refractive index lower than that of TiO x , AlO x or SiO x .

[0312] The difference in refractive index between the first inorganic layer 1-01 and the second inorganic layer 1-02 may be about 0.4 or greater. In an exemplary embodiment, for example, the first inorganic layer 1-01 may include TiO 2 and the second inorganic layer 1-02 may include SiN x . For example, since TiO 2 has a refractive index of about 2.288 and SiO x has a refractive index in the range of about 1.833 to about 1.882, the first inorganic layer 1-01 and the second inorganic layer 1-02 containing these materials may have a refractive index difference in the range of about 0.406 to about 0.455.

[0313] In an exemplary embodiment, the refractive index of the second inorganic layer 1-02 may be higher than that of the first inorganic layer 1-01. In such an exemplary embodiment, the second inorganic layer 1-02 may include TiO 2 and the first inorganic layer 1-01 may include SiN 2 having a refractive index lower than that of TiO x , AlO x or SiO x .

[0314] The third inorganic layer 2-03 has a refractive index different from that of the fourth inorganic layer 2-04. In an exemplary embodiment, for example, the refractive index of the third inorganic layer 2-03 may be higher than that of the fourth inorganic layer 2-04. The third inorganic layer 2-03 may include a material having a relatively high refractive index, and the fourth inorganic layer 2-04 may include a material having a relatively low refractive index. In an exemplary embodiment, the refractive index of the fourth inorganic layer 2-04 may be higher than that of the third inorganic layer 2-03.

[0315] The third inorganic layer 2-03 may include a material substantially the same as the material included in the first inorganic layer 1-01 described above, and the fourth inorganic layer 2-04 may include a material substantially the same as the material included in the second inorganic layer 1-02.

[0316] The fifth inorganic layer 3-05 has a refractive index different from that of the sixth inorganic layer 3-06. In an exemplary embodiment, for example, the refractive index of the fifth inorganic layer 3-05 may be higher than that of the sixth inorganic layer 3-06. The fifth inorganic layer 3-05 may include a material having a relatively high refractive index, and the sixth inorganic layer 3-06 may include a material having a relatively low refractive index. In an exemplary embodiment, the refractive index of the sixth inorganic layer 3-06 may be higher than that of the fifth inorganic layer 3-05.

[0317] The fifth inorganic layer 3-05 may include a material substantially the same as the material included in the first inorganic layer 1-01 described above, and the sixth inorganic layer 3-06 may include a material substantially the same as the material included in the second inorganic layer 1-02 described above.

[0318] The seventh inorganic layer 4-07 has a refractive index different from that of the eighth inorganic layer 4-08. In an exemplary embodiment, for example, the refractive index of the seventh inorganic layer 4-07 may be higher than that of the eighth inorganic layer 4-08. The seventh inorganic layer 4-07 may include a material having a relatively high refractive index, and the eighth inorganic layer 4-08 may include a material having a relatively low refractive index. In an exemplary embodiment, for example, the refractive index of the eighth inorganic layer 4-08 may be higher than that of the seventh inorganic layer 4-07.

[0319] The seventh inorganic layer 4-07 may include a material substantially the same as the material included in the first inorganic layer 1-01 described above, and the eighth inorganic layer 4-08 may include a material substantially the same as the material included in the second inorganic layer 1-02 described above.

[0320] Fig.13 View of part A for magnification according to another exemplary embodiment Fig. 9 of.

[0321] As Fig.13 shown, the sealing unit 750 may include a lower inorganic layer 751, an organic layer 755, an upper inorganic layer 752, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 may include a first composite inorganic layer 1001, a second composite inorganic layer 1002, a third composite inorganic layer 1003, a fourth composite inorganic layer 1004, and a fifth composite inorganic layer 1005.

[0322] Fig.13 The first composite inorganic layer 1001, the second composite inorganic layer 1002, the third composite inorganic layer 1003, and the fourth composite inorganic layer 1004 shown in Fig.12 are substantially the same as the first composite inorganic layer 1001, the second composite inorganic layer 1002, the third composite inorganic layer 1003, and the fourth composite inorganic layer 1004 shown in Fig.13 The fourth composite inorganic layer 1004 is located between the third composite inorganic layer 1003 and the fifth composite inorganic layer 1005.

[0323] The fifth composite inorganic layer 1005 may be located on the fourth composite inorganic layer 1004. In an exemplary embodiment, for example, the fifth composite inorganic layer 1005 may be located between the fourth composite inorganic layer 1004 and the lower inorganic layer 751.

[0324] The fifth composite inorganic layer 1005 may include a ninth inorganic layer 5-09 and a tenth inorganic layer 5-10 located on the ninth inorganic layer 5-09. In an exemplary embodiment, for example, the ninth inorganic layer 5-09 may be located between the eighth inorganic layer 4-08 and the tenth inorganic layer 5-10, and the tenth inorganic layer 5-10 may be located between the ninth inorganic layer 5-09 and the lower inorganic layer 751. The ninth inorganic layer 5-09 and the tenth inorganic layer 5-10 may be in contact with each other.

[0325] The ninth inorganic layer 5-09 has a refractive index different from that of the tenth inorganic layer 5-10. In an exemplary embodiment, for example, the refractive index of the ninth inorganic layer 5-09 may be higher than that of the tenth inorganic layer 5-10. The ninth inorganic layer 5-09 may include a material with a relatively high refractive index, and the tenth inorganic layer 5-10 may include a material with a relatively low refractive index. In an exemplary embodiment, the refractive index of the tenth inorganic layer 5-10 may be higher than that of the ninth inorganic layer 5-09.

[0326] The ninth inorganic layer 5-09 may include a material substantially the same as the material included in the first inorganic layer 1-01 described above, and the tenth inorganic layer 5-10 may include a material substantially the same as the material included in the second inorganic layer 1-02 described above.

[0327] Fig.14 For magnification of a portion A according to another exemplary embodiment Fig. 9 View of portion A.

[0328] As Fig.14 As shown, the sealing unit 750 may include a lower inorganic layer 751, an organic layer 755, an upper inorganic layer 752, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layers 1000 may include a first composite inorganic layer 1001, a second composite inorganic layer 1002, a third composite inorganic layer 1003, a fourth composite inorganic layer 1004, a fifth composite inorganic layer 1005, a sixth composite inorganic layer 1006, a seventh composite inorganic layer 1007, and an eighth composite inorganic layer 1008.

[0329] Fig.14The first composite inorganic layer 1001, the second composite inorganic layer 1002, the third composite inorganic layer 1003, and the fourth composite inorganic layer 1004 shown in Fig.12 are substantially the same as the first composite inorganic layer 1001, the second composite inorganic layer 1002, the third composite inorganic layer 1003, and the fourth composite inorganic layer 1004 shown in Fig.14 . However, the fourth composite inorganic layer 1004 of

[0330] Fig.14 is located between the third composite inorganic layer 1003 and the fifth composite inorganic layer 1005. Fig.13 The fifth composite inorganic layer 1005 of Fig.14 is substantially the same as the fifth composite inorganic layer 1005 of

[0331] . However, the fifth composite inorganic layer 1005 of

[0332] is located between the fourth composite inorganic layer 1004 and the sixth composite inorganic layer 1006.

[0333] The sixth composite inorganic layer 1006 may be located on the fifth composite inorganic layer 1005. In an exemplary embodiment, for example, the sixth composite inorganic layer 1006 may be located between the fifth composite inorganic layer 1005 and the seventh composite inorganic layer 1007.

[0334] The seventh composite inorganic layer 1007 may be located on the sixth composite inorganic layer 1006. In an exemplary embodiment, for example, the seventh composite inorganic layer 1007 may be located between the sixth composite inorganic layer 1006 and the eighth composite inorganic layer 1008.

[0335] The seventh composite inorganic layer 1007 may include a thirteenth inorganic layer 7-13 and a fourteenth inorganic layer 7-14 located on the thirteenth inorganic layer 7-13. In an exemplary embodiment, for example, the thirteenth inorganic layer 7-13 may be located between the twelfth inorganic layer 6-12 and the fourteenth inorganic layer 7-14, and the fourteenth inorganic layer 7-14 may be located between the thirteenth inorganic layer 7-13 and the eighth composite inorganic layer 1008. The thirteenth inorganic layer 7-13 and the fourteenth inorganic layer 7-14 may be in contact with each other.

[0336] The eighth composite inorganic layer 1008 may include a fifteenth inorganic layer 8-15 and a sixteenth inorganic layer 8-16 located on the fifteenth inorganic layer 8-15. In an exemplary embodiment, for example, the fifteenth inorganic layer 8-15 may be located between the fourteenth inorganic layer 7-14 and the sixteenth inorganic layer 8-16, and the sixteenth inorganic layer 8-16 may be located between the fifteenth inorganic layer 8-15 and the lower inorganic layer 751. The fifteenth inorganic layer 8-15 and the sixteenth inorganic layer 8-16 may be in contact with each other.

[0337] The eleventh inorganic layer 6-11 has a refractive index different from that of the twelfth inorganic layer 6-12. In an exemplary embodiment, for example, the refractive index of the eleventh inorganic layer 6-11 may be higher than that of the twelfth inorganic layer 6-12. The eleventh inorganic layer 6-11 may include a material having a relatively high refractive index, and the twelfth inorganic layer 6-12 may include a material having a relatively low refractive index. In an exemplary embodiment, the refractive index of the twelfth inorganic layer 6-12 may be higher than that of the eleventh inorganic layer 6-11.

[0338] The eleventh inorganic layer 6-11 may include a material substantially the same as the material included in the first inorganic layer 1-01 described above, and the twelfth inorganic layer 6-12 may include a material substantially the same as the material included in the second inorganic layer 1-02 described above.

[0339] The thirteenth inorganic layer 7-13 has a refractive index different from that of the fourteenth inorganic layer 7-14. In an exemplary embodiment, for example, the refractive index of the thirteenth inorganic layer 7-13 may be higher than that of the fourteenth inorganic layer 7-14. The thirteenth inorganic layer 7-13 may include a material having a relatively high refractive index, and the fourteenth inorganic layer 7-14 may include a material having a relatively low refractive index. In an exemplary embodiment, the refractive index of the fourteenth inorganic layer 7-14 may be higher than that of the thirteenth inorganic layer 7-13.

[0340] The thirteenth inorganic layer 7-13 may include a material substantially the same as the material included in the first inorganic layer 1-01 described above, and the fourteenth inorganic layer 7-14 may include a material substantially the same as the material included in the second inorganic layer 1-02 described above.

[0341] The fifteenth inorganic layer 8-15 has a refractive index different from that of the sixteenth inorganic layer 8-16. In an exemplary embodiment, for example, the refractive index of the fifteenth inorganic layer 8-15 may be higher than that of the sixteenth inorganic layer 8-16. The fifteenth inorganic layer 8-15 may include a material having a relatively high refractive index, and the sixteenth inorganic layer 8-16 may include a material having a relatively low refractive index. In an exemplary embodiment, the refractive index of the sixteenth inorganic layer 8-16 may be higher than that of the fifteenth inorganic layer 8-15.

[0342] The fifteenth inorganic layer 8-15 may include a material substantially the same as the material included in the first inorganic layer 1-01 described above, and the sixteenth inorganic layer 8-16 may include a material substantially the same as the material included in the second inorganic layer 1-02 described above.

[0343] Fig.15 For magnification of part A according to another exemplary embodiment Fig. 9 View of.

[0344] As Fig.15 shown, the sealing unit 750 may include an organic layer 755, an upper inorganic layer 752, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the plurality of composite inorganic layers 1000 may include a first composite inorganic layer 1001, a second composite inorganic layer 1002, a third composite inorganic layer 1003, a fourth composite inorganic layer 1004, a fifth composite inorganic layer 1005, a sixth composite inorganic layer 1006, a seventh composite inorganic layer 1007, and an eighth composite inorganic layer 1008.

[0345] Different from the sealing unit 750 of the above Fig.14 the sealing unit 750 does not include a lower inorganic layer 751. Fig.15

[0346] Fig.15 Fig.14 The organic layer 755, the upper inorganic layer 752, and the first to eighth composite inorganic layers 1001 to 1008 of are substantially the same as the organic layer 755, the upper inorganic layer 752, and the first to eighth composite inorganic layers 1001 to 1008 of the above Fig.15 However, the eighth composite inorganic layer 1008 of may be located between the seventh composite inorganic layer 1007 and the organic layer 755.

[0347] Fig.16 Fig. 9 For magnification of part A according to another exemplary embodiment

[0348] View of.

[0348] As Fig.16As shown, the sealing unit 750 may include a lower inorganic layer 751, an organic layer 755, an upper inorganic layer 752, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 may include a first composite inorganic layer 1011, a second composite inorganic layer 1022, a third composite inorganic layer 1033, and a fourth composite inorganic layer 1044.

[0349] The first composite inorganic layer 1011 may be located on the upper inorganic layer 752. In an exemplary embodiment, for example, the first composite inorganic layer 1011 may be located between the upper inorganic layer 752 and the second composite inorganic layer 1022.

[0350] The second composite inorganic layer 1022 may be located on the first composite inorganic layer 1011. In an exemplary embodiment, for example, the second composite inorganic layer 1022 may be located between the first composite inorganic layer 1011 and the third composite inorganic layer 1033.

[0351] The third composite inorganic layer 1033 may be located on the second composite inorganic layer 1022. In an exemplary embodiment, for example, the third composite inorganic layer 1033 may be located between the second composite inorganic layer 1022 and the fourth composite inorganic layer 1044.

[0352] The fourth composite inorganic layer 1044 may be located on the third composite inorganic layer 1033.

[0353] The first composite inorganic layer 1011 may include a first inorganic layer 11-01 and a second inorganic layer 11-02 located on the first inorganic layer 11-01. In an exemplary embodiment, for example, the first inorganic layer 11-01 may be located between the upper inorganic layer 752 and the second inorganic layer 11-02, and the second inorganic layer 11-02 may be located between the first inorganic layer 11-01 and the second composite inorganic layer 1022. The first inorganic layer 11-01 and the second inorganic layer 11-02 may be in contact with each other.

[0354] The second composite inorganic layer 1022 may include a third inorganic layer 22-03 and a fourth inorganic layer 22-04 located on the third inorganic layer 22-03. In an exemplary embodiment, for example, the third inorganic layer 22-03 may be located between the second inorganic layer 11-02 and the fourth inorganic layer 22-04, and the fourth inorganic layer 22-04 may be located between the third inorganic layer 22-03 and the third composite inorganic layer 1033. The third inorganic layer 22-03 and the fourth inorganic layer 22-04 may be in contact with each other.

[0355] The third composite inorganic layer 1033 may include a fifth inorganic layer 33-05 and a sixth inorganic layer 33-06 located on the fifth inorganic layer 33-05. In an exemplary embodiment, for example, the fifth inorganic layer 33-05 may be located between the fourth inorganic layer 22-04 and the sixth inorganic layer 33-06, and the sixth inorganic layer 33-06 may be located between the fifth inorganic layer 33-05 and the fourth composite inorganic layer 1044. The fifth inorganic layer 33-05 and the sixth inorganic layer 33-06 may be in contact with each other.

[0356] The fourth composite inorganic layer 1044 may include a seventh inorganic layer 44-07 and an eighth inorganic layer 44-08 located on the seventh inorganic layer 44-07. In an exemplary embodiment, for example, the seventh inorganic layer 44-07 may be located between the sixth inorganic layer 33-06 and the eighth inorganic layer 44-08, and the eighth inorganic layer 44-08 may be located on the seventh inorganic layer 44-07. The seventh inorganic layer 44-07 and the eighth inorganic layer 44-08 may be in contact with each other.

[0357] The first inorganic layer 11-01 has a refractive index different from that of the second inorganic layer 11-02. In an exemplary embodiment, for example, the refractive index of the first inorganic layer 11-01 may be higher than that of the second inorganic layer 11-02. The first inorganic layer 11-01 may include a material having a relatively high refractive index, and the second inorganic layer 11-02 may include a material having a relatively low refractive index.

[0358] In an exemplary embodiment, for example, the first inorganic layer 11-01 and the second inorganic layer 11-02 may include an inorganic material such as TiO 2 、SiN x 、AlO x and SiO x . As a more specific example, the first inorganic layer 11-01 may include TiO 2 , and the second inorganic layer 11-02 may include SiN 2 、AlO x 、AlO x and SiO x having a refractive index lower than that of TiO

[0359] For example, the difference between the refractive index of the first inorganic layer 11-01 and the refractive index of the second inorganic layer 11-02 may be about 0.4 or greater. In an exemplary embodiment, for example, the first inorganic layer 11-01 may include TiO 2 , and the second inorganic layer 11-02 may include SiO x . For example, since TiO 2 has a refractive index of about 2.288 and SiO xIt has a refractive index in the range of about 1.833 to about 1.882. Thus, the first inorganic layer 11-01 and the second inorganic layer 11-02 containing these materials can have a refractive index difference in the range of about 0.406 to about 0.455.

[0360] In an exemplary embodiment, the refractive index of the second inorganic layer 11-02 can be higher than that of the first inorganic layer 11-01. In such an exemplary embodiment, the second inorganic layer 11-02 can include TiO 2 , and the first inorganic layer 11-01 can include SiN 2 having a refractive index lower than that of TiO x , AlO x and SiO x of any one.

[0361] The third inorganic layer 22-03 has a refractive index different from that of the fourth inorganic layer 22-04. In an exemplary embodiment, for example, the refractive index of the third inorganic layer 22-03 can be higher than that of the fourth inorganic layer 22-04. The third inorganic layer 22-03 can include materials with a relatively high refractive index, and the fourth inorganic layer 22-04 can include materials with a relatively low refractive index. In an exemplary embodiment, the refractive index of the fourth inorganic layer 22-04 can be higher than that of the third inorganic layer 22-03.

[0362] The third inorganic layer 22-03 can include materials substantially the same as those included in the first inorganic layer 11-01 described above, and the fourth inorganic layer 22-04 can include materials substantially the same as those included in the second inorganic layer 11-02.

[0363] The fifth inorganic layer 33-05 has a refractive index different from that of the sixth inorganic layer 33-06. In an exemplary embodiment, for example, the refractive index of the fifth inorganic layer 33-05 can be higher than that of the sixth inorganic layer 33-06. The fifth inorganic layer 33-05 can include materials with a relatively high refractive index, and the sixth inorganic layer 33-06 can include materials with a relatively low refractive index. In an exemplary embodiment, the refractive index of the sixth inorganic layer 33-06 can be higher than that of the fifth inorganic layer 33-05.

[0364] The fifth inorganic layer 33-05 can include materials substantially the same as those included in the first inorganic layer 11-01 described above, and the sixth inorganic layer 33-06 can include materials substantially the same as those included in the second inorganic layer 11-02 described above.

[0365] The seventh inorganic layer 44-07 has a refractive index different from that of the eighth inorganic layer 44-08. In an exemplary embodiment, for example, the refractive index of the seventh inorganic layer 44-07 may be higher than that of the eighth inorganic layer 44-08. The seventh inorganic layer 44-07 may include a material having a relatively high refractive index, and the eighth inorganic layer 44-08 may include a material having a relatively low refractive index. In an exemplary embodiment, the refractive index of the eighth inorganic layer 44-08 may be higher than that of the seventh inorganic layer 44-07.

[0366] The seventh inorganic layer 44-07 may include a material substantially the same as the material included in the first inorganic layer 11-01 described above, and the eighth inorganic layer 44-08 may include a material substantially the same as the material included in the second inorganic layer 11-02 described above.

[0367] In another exemplary embodiment, in Fig.16 the second composite inorganic layer 1022 to the fourth composite inorganic layer 1044 may be omitted.

[0368] Fig.17 is a view of part A of an amplification according to another exemplary embodiment Fig. 9 thereof.

[0369] As Fig.17 shown, the sealing unit 750 may include a lower inorganic layer 751, an organic layer 755, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 may include a first composite inorganic layer 1011, a second composite inorganic layer 1022, a third composite inorganic layer 1033, and a fourth composite inorganic layer 1044.

[0370] Unlike Fig.16 the sealing unit 750 of Fig.17 the sealing unit 750 of

[0371] Fig.17 does not include an upper inorganic layer 752. The organic layer 755, the lower inorganic layer 751, and the first composite inorganic layer 1011 to the fourth composite inorganic layer 1044 in Fig.16 are substantially the same as those in Fig.17 above. However,

[0372] Fig.18 is a view of part A of an amplification according to another exemplary embodiment Fig. 9 thereof.

[0373] As Fig.18As shown, the sealing unit 750 may include a lower inorganic layer 751, an organic layer 755, an upper inorganic layer 752, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 may include a first lower composite inorganic layer 1001, a second lower composite inorganic layer 1002, a third lower composite inorganic layer 1003, a fourth lower composite inorganic layer 1004, a first upper composite inorganic layer 1011, a second upper composite inorganic layer 1022, a third upper composite inorganic layer 1033, and a fourth upper composite inorganic layer 1044.

[0374] Fig.18 The first lower composite inorganic layer 1001, the second lower composite inorganic layer 1002, the third lower composite inorganic layer 1003, and the fourth lower composite inorganic layer 1004 of are respectively substantially the same as the Fig.12 first composite inorganic layer 1001, second composite inorganic layer 1002, third composite inorganic layer 1003, and fourth composite inorganic layer 1004 of Fig.12 .

[0375] Fig.18 The first upper composite inorganic layer 1011, the second upper composite inorganic layer 1022, the third upper composite inorganic layer 1033, and the fourth upper composite inorganic layer 1044 of Fig.18 are respectively substantially the same as the Fig.16 first composite inorganic layer 1011, second composite inorganic layer 1022, third composite inorganic layer 1033, and fourth composite inorganic layer 1044 of Fig.16 .

[0376] Fig.19 is a view of enlarged portion A according to another exemplary embodiment. Fig. 9 of Fig. 9 .

[0377] As Fig.19 shown, the sealing unit 750 may include an organic layer 755 and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 may include a first lower composite inorganic layer 1001, a second lower composite inorganic layer 1002, a third lower composite inorganic layer 1003, a fourth lower composite inorganic layer 1004, a first upper composite inorganic layer 1011, a second upper composite inorganic layer 1022, a third upper composite inorganic layer 1033, and a fourth upper composite inorganic layer 1044.

[0378] Unlike Fig.18 the sealing unit 750 of Fig.18 , Fig.19 the sealing unit 750 of Fig.19 does not include a lower inorganic layer 751 and an upper inorganic layer 752.

[0379] Fig.19 The organic layer 755, the first lower composite inorganic layer 1001 to the fourth lower composite inorganic layer 1004, and the first upper composite inorganic layer 1011 to the fourth upper composite inorganic layer 1044 of

[0379] are respectively the same as Fig.18The organic layer 755, the first lower composite inorganic layer 1001 to the fourth lower composite inorganic layer 1004, and the first upper composite inorganic layer 1011 to the fourth upper composite inorganic layer 1044 are substantially the same. However, Fig.19 the fourth lower composite inorganic layer 1004 of Fig.19 may be located between the third lower composite inorganic layer 1003 and the organic layer 755, and

[0380] Fig. 20 is an enlarged Fig. 9 view of part A according to another exemplary embodiment.

[0381] As Fig. 20 shown, the sealing unit 750 may include an organic layer 755, a lower inorganic layer 751, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 may include a first lower composite inorganic layer 1001, a second lower composite inorganic layer 1002, a third lower composite inorganic layer 1003, a fourth lower composite inorganic layer 1004, a first upper composite inorganic layer 1011, a second upper composite inorganic layer 1022, a third upper composite inorganic layer 1033, and a fourth upper composite inorganic layer 1044.

[0382] Different from Fig.18 the sealing unit 750 of Fig. 20 the sealing unit 750 of

[0383] Fig. 20 does not include an upper inorganic layer 752. Fig.18 The organic layer 755, the lower inorganic layer 751, the first lower composite inorganic layer 1001 to the fourth lower composite inorganic layer 1004, and the first upper composite inorganic layer 1011 to the fourth upper composite inorganic layer 1044 of Fig. 20 are substantially the same as those of

[0384] Fig.21 is an enlarged Fig. 9 view of part A according to another exemplary embodiment.

[0385] As Fig.21As shown, the sealing unit 750 may include an organic layer 755, an upper inorganic layer 752, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 may include a first lower composite inorganic layer 1001, a second lower composite inorganic layer 1002, a third lower composite inorganic layer 1003, a fourth lower composite inorganic layer 1004, a first upper composite inorganic layer 1011, a second upper composite inorganic layer 1022, a third upper composite inorganic layer 1033, and a fourth upper composite inorganic layer 1044.

[0386] Unlike Fig.18 the sealing unit 750 of Fig.21 the sealing unit 750 does not include a lower inorganic layer 751.

[0387] Fig.21 The organic layer 755, the upper inorganic layer 752, the first lower composite inorganic layer 1001 to the fourth lower composite inorganic layer 1004, and the first upper composite inorganic layer 1011 to the fourth upper composite inorganic layer 1044 of Fig.18 are substantially the same as those of

[0388] However, Fig.21 the fourth lower composite inorganic layer 1004 of

[0389] may be located between the third lower composite inorganic layer 1003 and the organic layer 755. As in the various embodiments described above, the sealing unit may include at least one composite inorganic layer. In other words, the sealing unit may have a composite inorganic single-layer structure including one composite inorganic layer or a composite inorganic multi-layer structure including a plurality of composite inorganic layers.

[0390] In such an exemplary embodiment, in the composite inorganic multi-layer structure, the inorganic layer in one of the adjacent composite inorganic layers included in the composite inorganic layer faces the inorganic layer in the other of the adjacent composite inorganic layers included in the composite inorganic layer, and the two facing inorganic layers have different refractive indices from each other. In an exemplary embodiment, for example, as Fig.12 shown, the second inorganic layer 1-02 of the first composite inorganic layer 1001 and the third inorganic layer 2-03 of the second composite inorganic layer 1002 face each other, and the second inorganic layer 1-02 and the third inorganic layer 2-03 have different refractive indices from each other.

[0391] In addition, the inorganic layer in one of the adjacent composite inorganic layers included in the composite inorganic layer faces the inorganic layer in the other of the adjacent composite inorganic layers included in the composite inorganic layer, and the two facing inorganic layers may be in contact with each other. In an exemplary embodiment, for example, as Fig.12As shown, the second inorganic layer 1-02 of the first composite inorganic layer 1001 and the third inorganic layer 2-03 of the adjacent second composite inorganic layer 1002 face each other, and the second inorganic layer 1-02 and the third inorganic layer 2-03 may be in contact with each other.

[0392] Fig. 22 Magnified view of part A according to another exemplary embodiment Fig. 9 of part A.

[0393] As Fig. 22 shown, the sealing unit 750 may include a lower inorganic layer 751, an organic layer 755, an upper inorganic layer 752, an auxiliary inorganic layer 2000, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 may include a first composite inorganic layer 1001, a second composite inorganic layer 1002, a third composite inorganic layer 1003, and a fourth composite inorganic layer 1004.

[0394] Fig. 22 The first composite inorganic layer 1001, the second composite inorganic layer 1002, the third composite inorganic layer 1003, and the fourth composite inorganic layer 1004 of Fig.12 are substantially the same as the first composite inorganic layer 1001, the second composite inorganic layer 1002, the third composite inorganic layer 1003, and the fourth composite inorganic layer 1004 of

[0395] The auxiliary inorganic layer 2000 is positioned close to the composite inorganic layer among the composite inorganic layers 1000 that is closest to the organic layer 755. In an exemplary embodiment, the auxiliary inorganic layer 2000 may be located on the fourth composite inorganic layer 1004. As a more specific example, for example, the auxiliary inorganic layer 2000 may be located between the eighth inorganic layer 4-08 and the lower inorganic layer 751. In this exemplary embodiment, the auxiliary inorganic layer 2000 may be in contact with the eighth inorganic layer 4-08 and the lower inorganic layer 751.

[0396] The auxiliary inorganic layer 2000 may have a refractive index substantially equal to that of any inorganic layer included in the adjacent fourth composite inorganic layer 1004. In this exemplary embodiment, the auxiliary inorganic layer 2000 may have a refractive index substantially equal to that of the inorganic layer included in the fourth composite inorganic layer 1004 and arranged away from the auxiliary inorganic layer 2000. In an exemplary embodiment, for example, the auxiliary inorganic layer 2000 may have a refractive index substantially equal to that of the seventh inorganic layer 4-07.

[0397] Fig.23 Magnified view of part A according to another exemplary embodiment Fig. 9 of part A.

[0398] As Fig.23As shown, the sealing unit 750 may include a lower inorganic layer 751, an organic layer 755, an upper inorganic layer 752, an auxiliary inorganic layer 4000, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 may include a first composite inorganic layer 1011, a second composite inorganic layer 1022, a third composite inorganic layer 1033, and a fourth composite inorganic layer 1044.

[0399] Fig.23 The first composite inorganic layer 1011, the second composite inorganic layer 1022, the third composite inorganic layer 1033, and the fourth composite inorganic layer 1044 of Fig.16 are substantially the same as the first composite inorganic layer 1011, the second composite inorganic layer 1022, the third composite inorganic layer 1033, and the fourth composite inorganic layer 1044 of

[0400] The auxiliary inorganic layer 4000 is positioned close to the composite inorganic layer among the composite inorganic layers 1000 that is closest to the organic layer 755. In an exemplary embodiment, the auxiliary inorganic layer 4000 may be located below the first composite inorganic layer 1011. As a more specific example, for example, the auxiliary inorganic layer 4000 may be located between the first inorganic layer 11 - 01 and the upper inorganic layer 752. In this exemplary embodiment, the auxiliary inorganic layer 4000 may be in contact with the first inorganic layer 11 - 01 and the upper inorganic layer 752.

[0401] The auxiliary inorganic layer 4000 may have a refractive index that is substantially equal to the refractive index of any inorganic layer included in the adjacent first composite inorganic layer 1011. In this exemplary embodiment, the auxiliary inorganic layer 4000 may have a refractive index that is substantially equal to the refractive index of the inorganic layer included in the first composite inorganic layer 1011 and arranged away from the auxiliary inorganic layer 4000. In an exemplary embodiment, for example, the auxiliary inorganic layer 4000 may have a refractive index that is substantially equal to the refractive index of the second inorganic layer 11 - 02.

[0402] Fig.24 is an enlarged view of part A according to another exemplary embodiment Fig. 9 of

[0403] As Fig.24 shown, the sealing unit 750 may include a lower inorganic layer 751, an organic layer 755, an upper inorganic layer 752, and a plurality of composite inorganic layers 1000. In an exemplary embodiment, for example, the composite inorganic layer 1000 may include a first composite inorganic layer 1001, a second composite inorganic layer 1002, a third composite inorganic layer 1003, and a fourth composite inorganic layer 1004.

[0404] Fig.24The first composite inorganic layer 1001, the second composite inorganic layer 1002, the third composite inorganic layer 1003, and the fourth composite inorganic layer 1004 are respectively in Fig.12 substantially the same as the first composite inorganic layer 1001, the second composite inorganic layer 1002, the third composite inorganic layer 1003, and the fourth composite inorganic layer 1004 of

[0405] As Fig.24 shown in, the protective layer 6000 may be located between the common electrode 613 and the sealing unit 750.

[0406] The protective layer 6000 may be located on the common electrode 613 to overlap the entire surface of the substrate 100. The protective layer 6000 may include at least one of a cover layer 6000a and a metal layer 6000b.

[0407] The cover layer 6000a is located on the common electrode 613. In an exemplary embodiment, for example, the cover layer 6000a is located between the common electrode 613 and the metal layer 6000b. The cover layer 6000a may include, for example, the same material as the organic layer 755 including an organic material.

[0408] The metal layer 6000b is located on the cover layer 6000a. In an exemplary embodiment, for example, the metal layer 6000b may be located between the cover layer 6000a and the first composite inorganic layer 1001. In an exemplary embodiment, the metal layer 6000b may include, for example, LiF.

[0409] Fig.25 To show Fig.11 an exploded perspective view of the composite inorganic layer of

[0410] As Fig.25 shown in, the interface S1 (hereinafter referred to as the "first interface") between the first inorganic layer 1-01 and the second inorganic layer 1-02 of the composite inorganic layer 1000 may have an uneven pattern. In other words, the first interface S1 may include recesses 11a and 22a and protrusions 11b and 22b. With this structure, the adhesion between the first inorganic layer 1-01 and the second inorganic layer 1-02 can be improved.

[0411] The first interface S1 includes the facing surfaces 11 and 22 of the first inorganic layer 1-01 and the second inorganic layer 1-02. When the surface of the first inorganic layer 1-01 in the facing surfaces 11 and 22 is defined as the first surface 11, and the surface of the second inorganic layer 1-02 in the facing surfaces 11 and 22 is defined as the second surface 22, the first surface 11 includes recesses 11a and protrusions 11b, and the second surface 22 includes recesses 22a and protrusions 22b. In this exemplary embodiment, the protrusions 11b of the first surface 11 are inserted into the recesses 22a of the second surface 22, and the protrusions 22b of the second surface 22 are inserted into the recesses 11a of the first surface 11.

[0412] In an exemplary embodiment, as Fig.25 in the example of, the protrusions 11b and 22b of the first interface S1 may have a triangular prism shape. As another example, the protrusions 11b and 22b of the first interface S1 may have a quadrangular prism shape or a semi-cylindrical shape.

[0413] In addition, the interface S2 (hereinafter referred to as the "second interface") between the second inorganic layer 1-02 and the lower inorganic layer 751 may have an uneven pattern. In other words, the second interface S2 may include recesses 33a and 44a and protrusions 33b and 44b. With this structure, the adhesion between the second inorganic layer 1-02 and the lower inorganic layer 751 can be improved.

[0414] The second interface S2 includes the facing surfaces 33 and 44 of the second inorganic layer 1-02 and the lower inorganic layer 751. When the surface of the second inorganic layer 1-02 in the facing surfaces 33 and 44 is defined as the third surface 33, and the surface of the lower inorganic layer 751 in the facing surfaces 33 and 44 is defined as the fourth surface 44, the third surface 33 includes recesses 33a and protrusions 33b, and the fourth surface 44 includes recesses 44a and protrusions 44b. In this exemplary embodiment, the protrusions 33b of the third surface 33 are inserted into the recesses 44a of the fourth surface 44, and the protrusions 44b of the fourth surface 44 are inserted into the recesses 33a of the third surface 33.

[0415] In an exemplary embodiment, as Fig.25 in the example of, the protrusions 33b and 44b of the second interface S2 may have a triangular prism shape. As another example, the protrusions 33b and 44b of the second interface S2 may have a quadrangular prism shape or a semi-cylindrical shape.

[0416] The arrangement direction of the protrusions 11b or 22b included in the first interface S1 and the arrangement direction of the protrusions 33b or 44b included in the second interface S2 may cross each other. In one exemplary embodiment, for example, as Fig.25As shown, the convex portions 11b of the first interface S1 may be arranged in the X-axis direction, and the convex portions 33b of the second interface S2 may be arranged in the Y-axis direction. With this structure, in addition to improving the adhesion between adjacent layers, it is also possible to improve the brightness of light passing through the sealing unit 750.

[0417] As Fig.25 shown, the convex portions 11b and 22b of the first interface S1 and the convex portions 33b and 44b of the second interface S2 may have substantially the same shape.

[0418] In an alternative exemplary embodiment, although not shown, the convex portions 11b and 22b of the first interface S1 and the convex portions 33b and 44b of the second interface S2 may have different shapes. In an exemplary embodiment, for example, the convex portions 11b and 22b of the first interface S1 may have a triangular prism shape, and the convex portions 33b and 44b of the second interface S2 may have a quadrangular prism shape.

[0419] Fig.26 FIG. is a graph showing the transmittance of the composite inorganic multilayer according to an exemplary embodiment of the present invention changing according to sunlight.

[0420] In Fig.26 this figure, the X-axis represents the wavelength of sunlight, and the Y-axis represents the transmittance (i.e., light transmittance).

[0421] Fig.26 The composite inorganic layer of 2 includes a TiO 2 inorganic layer (e.g., the first inorganic layer 1-01) and an Al 3 inorganic layer (e.g., the second inorganic layer 1-02).

[0422] The first curve C1 to the seventh curve C7 show the transmittance of each composite inorganic multilayer according to the wavelength of sunlight. Specifically, the first curve C1 represents the transmittance change of the first composite inorganic multilayer including two (e.g., two pairs) of composite inorganic layers, the second curve C2 represents the transmittance change of the second composite inorganic multilayer including three (e.g., three pairs) of composite inorganic layers, the third curve C3 represents the transmittance change of the third composite inorganic multilayer including four (e.g., four pairs) of composite inorganic layers, the fourth curve C4 represents the transmittance change of the fourth composite inorganic multilayer including five (e.g., five pairs) of composite inorganic layers, the fifth curve C5 represents the transmittance change of the fifth composite inorganic multilayer including six (e.g., six pairs) of composite inorganic layers, the sixth curve C6 represents the transmittance change of the sixth composite inorganic multilayer including seven (e.g., seven pairs) of composite inorganic layers, and the seventh curve C7 represents the transmittance change of the seventh composite inorganic multilayer including eight (e.g., eight pairs) of composite inorganic layers.

[0423] The first composite inorganic multilayer has two TiO layers alternately stacked with two Al 2 inorganic layers and two Al 2 O 3 inorganic layers. The second composite inorganic multilayer has three TiO 2 inorganic layers alternately stacked with three Al 2 O 3 inorganic layers. The third composite inorganic multilayer has four TiO 2 inorganic layers alternately stacked with four Al 2 O 3 inorganic layers. The fourth composite inorganic multilayer has five TiO 2 inorganic layers alternately stacked with five Al 2 O 3 inorganic layers. The fifth composite inorganic multilayer has six TiO 2 inorganic layers alternately stacked with six Al 2 O 3 inorganic layers. The sixth composite inorganic multilayer has seven TiO 2 inorganic layers alternately stacked with seven Al 2 O 3 inorganic layers. And the seventh composite inorganic multilayer has eight TiO 2 inorganic layers alternately stacked with eight Al 2 O 3 inorganic layers.

[0424] As Fig.26 shown, in the wavelength range of ultraviolet ("UV") light (e.g., the wavelength range from about 320 nm to about 405 nm), the first to seventh composite inorganic multilayers have a relatively low transmittance (e.g., a transmittance of about 0.1 or less or about 10% or less). Accordingly, the sealing unit 750 including the composite inorganic multilayer according to an exemplary embodiment of the present invention may have excellent UV light blocking ability.

[0425] Fig. 27 It is a graph showing the change in the transmittance of the composite inorganic multilayer according to the application of sunlight according to an exemplary embodiment of the present invention.

[0426] In Fig. 27 it, the X-axis represents the wavelength of sunlight, and the Y-axis represents the transmittance (i.e., light transmittance).

[0427] Fig. 27 The composite inorganic layer of 2 includes a TiO 2 inorganic layer (e.g., the first inorganic layer 1-01) and an Al 3 O inorganic layer (e.g., the second inorganic layer 1-02).

[0428] Fig. 27 Each of the curves C0, C1, and C2 represents the transmittance of a composite inorganic multilayer including six (e.g., six pairs) of composite inorganic layers disposed on a SiN layer having a thickness of about 3000 angstroms (Å) for each condition. x Specifically, the reference curve C0 represents the simulation result of the transmittance of the composite inorganic multilayer, the first curve C1 represents the transmittance of the composite inorganic multilayer (hereinafter referred to as "first composite inorganic multilayer") before sunlight is applied thereto, and the second curve C2 represents the transmittance of the composite inorganic multilayer (hereinafter referred to as "second composite inorganic multilayer") to which sunlight is applied for a predetermined period of time.

[0429] As Fig. 27 shown, in the wavelength range of UV light (e.g., the wavelength range of about 320 nm to about 405 nm), the first composite inorganic multilayer and the second composite inorganic multilayer have a relatively low transmittance (e.g., a transmittance of about 0.1 or less or about 10% or less). In addition, the first composite inorganic multilayer and the second composite inorganic multilayer have substantially equal transmittances in the UV wavelength range. Accordingly, the sealing unit including the composite inorganic multilayer according to an exemplary embodiment of the present invention can have excellent UV light blocking ability after sunlight is applied thereto for a relatively long time.

[0430] Fig.28 is a graph showing the change in the transmittance of a composite inorganic multilayer according to the application of sunlight according to another exemplary embodiment of the present invention.

[0431] In Fig.28 , the X-axis represents the wavelength of sunlight, and the Y-axis represents the transmittance (i.e., light transmittance).

[0432] Fig.28 The composite inorganic layer of 2 includes a TiO 2 inorganic layer (e.g., first inorganic layer 1-01) and an Al 3 O

[0433] Fig.28 Each of the curves C0, C1, and C2 represents the transmittance of a composite inorganic multilayer including six (e.g., six pairs) of composite inorganic layers disposed on original glass. Specifically, the reference curve C0 represents the simulation result of the transmittance of the composite inorganic multilayer, the first curve C1 represents the transmittance of the composite inorganic multilayer (hereinafter referred to as "first composite inorganic multilayer") before sunlight is applied thereto, and the second curve C2 represents the transmittance of the composite inorganic multilayer (hereinafter referred to as "second composite inorganic multilayer") to which sunlight is applied for a predetermined period of time.

[0434] As shown Fig.28 in, within the wavelength range of UV light (e.g., a wavelength range of about 320 nm to about 405 nm), the first composite inorganic multilayer and the second composite inorganic multilayer have a relatively low transmittance (e.g., a transmittance of about 0.1 or less or about 10% or less). Additionally, the first composite inorganic multilayer and the second composite inorganic multilayer have substantially equal transmittances within the UV wavelength range. Accordingly, a sealing unit including a composite inorganic multilayer according to an embodiment of the present invention can have excellent UV light blocking ability after being exposed to sunlight for a relatively long time.

[0435] Fig.29 A table showing the materials and refractive indices of each inorganic layer included in a composite inorganic layer according to an exemplary embodiment of the present invention.

[0436] As shown Fig.29 in, TiO 2 has a refractive index of about 2.288, SiN x has a refractive index in the range of about 1.833 to about 1.882, AlO x has a refractive index in the range of about 1.627 to about 1.677, and SiO x has a refractive index in the range of about 1.463 to about 1.487.

[0437] Additionally, the refractive index differences between TiO Fig.29 and each material are presented in, and the refractive index difference between TiO 2 and SiO 2 is the largest (0.825). In an exemplary embodiment, for example, a composite inorganic layer may include TiO x as a high refractive index material (e.g., the material for the first inorganic layer 1-01) and may include SiO 2 as a low refractive index material (e.g., the material for the second inorganic layer 1-02). x

[0438] Fig.30 A table showing the combinations of composite inorganic layers according to an exemplary embodiment of the present invention and the transmittances of the combinations at each wavelength according to an exemplary embodiment of the present invention.

[0439] As shown Fig.30 in, a composite inorganic layer according to an exemplary embodiment of the present invention may have a combination ① (hereinafter referred to as "the first combination") including a first inorganic layer 1-01 including TiO 2 and a second inorganic layer 1-02 of SiN x (n = 1.882).

[0440] In addition, as shown in Fig.30 , the composite inorganic layer according to an exemplary embodiment of the present invention may have a combination ② (hereinafter referred to as "second combination") of a first inorganic layer 1-01 containing TiO 2 and a second inorganic layer 1-02 of SiN x (n = 1.833).

[0441] In addition, as shown in Fig.30 , the composite inorganic layer according to an exemplary embodiment of the present invention may have a combination ③ (hereinafter referred to as "third combination") of a first inorganic layer 1-01 containing TiO 2 and a second inorganic layer 1-02 of AlO x (n = 1.677).

[0442] In addition, as shown in Fig.30 , the composite inorganic layer according to an exemplary embodiment of the present invention may have a combination ④ (hereinafter referred to as "fourth combination") of a first inorganic layer 1-01 containing TiO 2 and a second inorganic layer 1-02 of AlO x (n = 1.627).

[0443] In addition, as shown in Fig.30 , the composite inorganic layer according to an exemplary embodiment of the present invention may have a combination ⑤ (hereinafter referred to as "fifth combination") of a first inorganic layer 1-01 containing TiO 2 and a second inorganic layer 1-02 of SiO x (n = 1.487).

[0444] In addition, as shown in Fig.30 , the composite inorganic layer according to an exemplary embodiment of the present invention may have a combination ⑥ (hereinafter referred to as "sixth combination") of a first inorganic layer 1-01 containing TiO 2 and a second inorganic layer 1-02 of SiO x (n = 1.463).

[0445] As shown in Fig.30As shown, the transmittance of the first combination ① in the wavelength ranges of about 405 nm and about 450 nm is about 11.46% and about 70.88% respectively, the transmittance of the second combination ② in the wavelength ranges of about 405 nm and about 450 nm is about 10.60% and about 74.35% respectively, the transmittance of the third combination ③ in the wavelength ranges of about 405 nm and about 450 nm is about 8.60% and about 76.89% respectively, the transmittance of the fourth combination ④ in the wavelength ranges of about 405 nm and about 450 nm is about 8.08% and about 77.33% respectively, the transmittance of the fifth combination ⑤ in the wavelength ranges of about 405 nm and about 450 nm is about 7.41% and about 78.10% respectively, and the transmittance of the sixth combination ⑥ in the wavelength ranges of about 405 nm and about 450 nm is about 7.25% and about 78.30% respectively.

[0446] The first combination ① and the second combination ② have relatively high transmittance in the relatively low wavelength range (405 nm). The third combination ③, the fourth combination ④, the fifth combination ⑤, and the sixth combination ⑥ have relatively low transmittance in the relatively low wavelength range (405 nm) (for example, a transmittance of about 0.1 or less or about 10% or less).

[0447] Fig.31 For showing Fig.30 a graph of the characteristics of each combination in

[0448] In Fig.31 the X-axis represents the wavelength of sunlight, and the Y-axis represents the transmittance (i.e., the light transmittance).

[0449] As Fig.31 shown, the first curve C1 related to the first combination ① and the second curve C2 related to the second combination ② show a transmittance higher than about 0.1 or about 10% in the relatively low wavelength range (405 nm). The third curve C3 related to the third combination ③, the fourth curve C4 related to the fourth combination ④, the fifth curve C5 related to the fifth combination ⑤, and the sixth curve C6 related to the sixth combination ⑥ show relatively low transmittance in the relatively low wavelength range (405 nm) (for example, a transmittance of about 0.1 or less or about 10% or less).

[0450] Fig.32A For showing the transmittance of a composite inorganic multilayer disposed on the SiN x layer and including SiN x and SiO x a table, Fig.32B For showing Fig.32A the transmittance of the composite inorganic multilayer of Fig.32C a graph, and Fig.32B a view of an enlarged partial wavelength range of

[0451] In Fig.32B and Fig.32C , the X-axis represents the wavelength of sunlight, and the Y-axis represents the transmittance (i.e., the light transmittance).

[0452] Fig.32A , Fig.32B and Fig.32C The composite inorganic layer of , includes a SiN x inorganic layer (e.g., the first inorganic layer 1-01) and a SiO x inorganic layer (e.g., the second inorganic layer 1-02). In this exemplary embodiment, the refractive index of the SiN x of the composite inorganic layer may be about 1.833, and the refractive index of the SiO x of the composite inorganic layer may be about 1.487.

[0453] Fig.32B and Fig.32C The first curve C1 to the ninth curve C9 in , show the transmittance according to the wavelength of sunlight for each composite inorganic multi-layer.

[0454] Specifically, the first curve C1 represents the transmittance change of the first composite inorganic multi-layer including two (e.g., two pairs) of composite inorganic layers, the second curve C2 represents the transmittance change of the second composite inorganic multi-layer including three (e.g., three pairs) of composite inorganic layers, the third curve C3 represents the transmittance change of the third composite inorganic multi-layer including four (e.g., four pairs) of composite inorganic layers, the fourth curve C4 represents the transmittance change of the fourth composite inorganic multi-layer including five (e.g., five pairs) of composite inorganic layers, the fifth curve C5 represents the transmittance change of the fifth composite inorganic multi-layer including six (e.g., six pairs) of composite inorganic layers, the sixth curve C6 represents the transmittance change of the sixth composite inorganic multi-layer including seven (e.g., seven pairs) of composite inorganic layers, the seventh curve C7 represents the transmittance change of the seventh composite inorganic multi-layer including eight (e.g., eight pairs) of composite inorganic layers, the eighth curve C8 represents the transmittance change of the eighth composite inorganic multi-layer including nine (e.g., nine pairs) of composite inorganic layers, and the ninth curve C9 represents the transmittance change of the ninth composite inorganic multi-layer including ten (e.g., ten pairs) of composite inorganic layers.

[0455] The first composite inorganic multi-layer has a structure in which two SiN x inorganic layers and two SiO x inorganic layers are alternately stacked on a SiN x layer (e.g., the upper inorganic layer 752). The second composite inorganic multi-layer has a structure in which three SiN x inorganic layers and three SiO x inorganic layers are alternately stacked on a SiN xStructure of the inorganic layer, the third composite inorganic multilayer has four SiN x inorganic layers and four SiO x inorganic layers alternately stacked on a SiN x layer (e.g., the upper inorganic layer 752). x Structure of the inorganic layer, the fourth composite inorganic multilayer has five SiN x inorganic layers and five SiO x inorganic layers alternately stacked on a SiN x layer (e.g., the upper inorganic layer 752). x Structure of the inorganic layer, the fifth composite inorganic multilayer has six SiN x inorganic layers and six SiO x inorganic layers alternately stacked on a SiN x layer (e.g., the upper inorganic layer 752). x Structure of the inorganic layer, the sixth composite inorganic multilayer has seven SiN x inorganic layers and seven SiO x inorganic layers alternately stacked on a SiN x layer (e.g., the upper inorganic layer 752). x Structure of the inorganic layer, the seventh composite inorganic multilayer has eight SiN x inorganic layers and eight SiO x inorganic layers alternately stacked on a SiN x layer (e.g., the upper inorganic layer 752). x Structure of the inorganic layer, the eighth composite inorganic multilayer has nine SiN x inorganic layers and nine SiO

[0456] Fig.32A The transmittances of the fourth to ninth composite inorganic multilayers are shown.

[0457] As Figure 32AAs shown, the transmittances of the fourth composite inorganic multilayer at wavelengths in the range of about 405 nm and about 450 nm are about 23.76% and about 80.08%, respectively; the transmittances of the fifth composite inorganic multilayer at wavelengths in the range of about 405 nm and about 450 nm are about 17.55% and about 81.93%, respectively; the transmittances of the sixth composite inorganic multilayer at wavelengths in the range of about 405 nm and about 450 nm are about 12.74% and about 83.68%, respectively; the transmittances of the seventh composite inorganic multilayer at wavelengths in the range of about 405 nm and about 450 nm are about 9.04% and about 84.08%, respectively; the transmittances of the eighth composite inorganic multilayer at wavelengths in the range of about 405 nm and about 450 nm are about 6.37% and about 82.54%, respectively; and the transmittances of the ninth composite inorganic multilayer at wavelengths in the range of about 405 nm and about 450 nm are about 4.50% and about 80.14%, respectively.

[0458] As Figure 32A shown, in the wavelength range of UV light (e.g., the wavelength range from about 320 nm to about 405 nm), the seventh composite inorganic multilayer, the eighth composite inorganic multilayer, and the ninth composite inorganic multilayer have relatively low transmittances (e.g., a transmittance of about 0.1 or less or about 10% or less). Accordingly, a sealing unit including one of the seventh composite inorganic multilayer, the eighth composite inorganic multilayer, and the ninth composite inorganic multilayer can have excellent UV light blocking ability.

[0459] Figure 33A To show a table of the transmittances and thicknesses of a composite inorganic multilayer disposed on a SiN x layer and including TiO 2 and Al 2 O 3 ; Figure 33B To show a graph of the transmittances of a composite inorganic multilayer Figure 33A ; and Figure 33C To show a view of a partially enlarged wavelength range Figure 33B ;

[0460] In Figure 33B and Figure 33C , the X-axis represents the wavelength of sunlight, and the Y-axis represents the transmittance (i.e., the light transmittance).

[0461] Figure 33A , Figure 33B and Figure 33C The composite inorganic layers of 2 include a TiO 2 inorganic layer (e.g., the first inorganic layer 1-01) and an Al 3 O 2The refractive index may be about 2.288, and the refractive index of the Al in the composite inorganic layer 2 O 3 may be about 1.627.

[0462] The first curve C1 to the seventh curve C7 show the transmittance of each composite inorganic multilayer according to the wavelength of sunlight. Specifically, the first curve C1 represents the change in transmittance of the first composite inorganic multilayer including two (e.g., two pairs) of composite inorganic layers, the second curve C2 represents the change in transmittance of the second composite inorganic multilayer including three (e.g., three pairs) of composite inorganic layers, the third curve C3 represents the change in transmittance of the third composite inorganic multilayer including four (e.g., four pairs) of composite inorganic layers, the fourth curve C4 represents the change in transmittance of the fourth composite inorganic multilayer including five (e.g., five pairs) of composite inorganic layers, the fifth curve C5 represents the change in transmittance of the fifth composite inorganic multilayer including six (e.g., six pairs) of composite inorganic layers, the sixth curve C6 represents the change in transmittance of the sixth composite inorganic multilayer including seven (e.g., seven pairs) of composite inorganic layers, and the seventh curve C7 represents the change in transmittance of the seventh composite inorganic multilayer including eight (e.g., eight pairs) of composite inorganic layers.

[0463] The first composite inorganic multilayer has a structure in which two TiO x inorganic layers and two Al 2 inorganic layers are alternately stacked on a SiN 2 O 3 layer (e.g., the upper inorganic layer 752). The second composite inorganic multilayer has a structure in which three TiO x inorganic layers and three Al 2 inorganic layers are alternately stacked on a SiN 2 O 3 layer (e.g., the upper inorganic layer 752). The third composite inorganic multilayer has a structure in which four TiO x inorganic layers and four Al 2 inorganic layers are alternately stacked on a SiN 2 O 3 layer (e.g., the upper inorganic layer 752). The fourth composite inorganic multilayer has a structure in which five TiO x inorganic layers and five Al 2 inorganic layers are alternately stacked on a SiN 2 O 3 layer (e.g., the upper inorganic layer 752). The fifth composite inorganic multilayer has a structure in which six TiO x inorganic layers and six Al 2 inorganic layers are alternately stacked on a SiN 2 O 3 layer (e.g., the upper inorganic layer 752). The sixth composite inorganic multilayer has a structure in which seven TiO xSeven TiO are alternately stacked on a layer (e.g., the upper inorganic layer 752). 2 inorganic layers and seven Al 2 O 3 inorganic layer structure, and the seventh composite inorganic multilayer has a structure in which eight TiO x layers are alternately stacked on a SiN 2 layer (e.g., the upper inorganic layer 752) and eight Al 2 O 3 inorganic layer structure.

[0464] In Figure 33A the transmittance of the second to seventh composite inorganic multilayers is shown.

[0465] Referring Figure 33A , the transmittance of the second composite inorganic multilayer in the wavelength ranges of about 405 nm and about 450 nm is about 21.46% and about 79.50% respectively, the transmittance of the third composite inorganic multilayer in the wavelength ranges of about 405 nm and about 450 nm is about 14.87% and about 79.86% respectively, the transmittance of the fourth composite inorganic multilayer in the wavelength ranges of about 405 nm and about 450 nm is about 9.97% and about 80.16% respectively, the transmittance of the fifth composite inorganic multilayer in the wavelength ranges of about 405 nm and about 450 nm is about 7.72% and about 79.48% respectively, the transmittance of the sixth composite inorganic multilayer in the wavelength ranges of about 405 nm and about 450 nm is about 7.60% and about 79.61% respectively, and the transmittance of the seventh composite inorganic multilayer in the wavelength ranges of about 405 nm and about 450 nm is about 6.47% and about 79.93% respectively.

[0466] Referring Figure 33A , the thickness of the second composite inorganic multilayer is about 3650 Å, the thickness of the third composite inorganic multilayer is about 4670 Å, the thickness of the fourth composite inorganic multilayer is about 5740 Å, the thickness of the fifth composite inorganic multilayer is about 6820 Å, the thickness of the sixth composite inorganic multilayer is about 8130 Å, and the thickness of the seventh composite inorganic multilayer is about 9400 Å.

[0467] As Figure 33A shown in, in the wavelength range of UV light (e.g., the wavelength range of about 320 nm to about 405 nm), the fourth to seventh composite inorganic multilayers have a relatively low transmittance (e.g., a transmittance of about 0.1 or less or about 10% or less). Accordingly, a sealing unit including one of the fourth to seventh composite inorganic multilayers can have excellent UV light blocking ability.

[0468] Figure 34A To show including TiO 2 layer and having a ratio to TiO2 Table of the transmittance of a composite inorganic multilayer having an inorganic layer with a small refractive index Figure 34B To show Figure 34A Graph of the transmittance for each combination Figure 34C To magnify Figure 34B View of a partial wavelength range Figure 34D To magnify Figure 34B View of another partial wavelength range

[0469] In Figure 34B 、 Figure 34C And Figure 34D The X-axis represents the wavelength of sunlight, and the Y-axis represents the transmittance (i.e., light transmittance).

[0470] As Figure 34A Shown in, the first composite inorganic multilayer ① according to an exemplary embodiment of the present invention includes a plurality of composite inorganic multilayers including a first inorganic layer 1-01 containing TiO 2 And a second inorganic layer 1-02 of SiN x (n = 1.882).

[0471] As Figure 34A Shown in, the second composite inorganic multilayer ② according to an exemplary embodiment of the present invention includes a plurality of composite inorganic multilayers including a first inorganic layer 1-01 containing TiO 2 And a second inorganic layer 1-02 of SiN x (n = 1.833).

[0472] As Figure 34A Shown in, the third composite inorganic multilayer ③ according to an exemplary embodiment of the present invention includes a plurality of composite inorganic multilayers including a first inorganic layer 1-01 containing TiO 2 And a second inorganic layer 1-02 of AlO x (n = 1.677).

[0473] As Figure 34A Shown in, the fourth composite inorganic multilayer ④ according to an exemplary embodiment of the present invention includes a plurality of composite inorganic multilayers including a first inorganic layer 1-01 containing TiO 2 And a second inorganic layer 1-02 of AlO x (n = 1.627).

[0474] As Figure 34A Shown in, the fifth composite inorganic multilayer ⑤ according to an exemplary embodiment of the present invention includes a plurality of composite inorganic multilayers including a first inorganic layer 1-01 containing TiO 2 And a second inorganic layer 1-02 of SiO x (n = 1.487).

[0475] AsFigure 34A As shown in Figure 34A , the sixth composite inorganic multilayer ⑥ according to an exemplary embodiment of the present invention includes a plurality of composite inorganic layers including a first inorganic layer 1-01 containing TiO and a second inorganic layer 1-02 of SiO (n = 1.463). 2 x

[0476] Each of the first composite inorganic multilayer ① to the sixth composite inorganic multilayer ⑥ described above may include the same number of composite inorganic layers. In an exemplary embodiment, for example, each of the first composite inorganic multilayer ① to the sixth composite inorganic multilayer ⑥ may include seven composite inorganic layers. As a specific example, the first composite inorganic multilayer ① may have a structure in which seven TiO inorganic layers and seven SiN (n = 1.882) inorganic layers are alternately stacked, the second composite inorganic multilayer ② may have a structure in which seven TiO inorganic layers and seven SiN (n = 1.833) inorganic layers are alternately stacked, the third composite inorganic multilayer ③ may have a structure in which seven TiO inorganic layers and seven AlO (n = 1.677) inorganic layers are alternately stacked, the fourth composite inorganic multilayer ④ may have a structure in which seven TiO inorganic layers and seven AlO (n = 1.627) inorganic layers are alternately stacked, the fifth composite inorganic multilayer ⑤ may have a structure in which seven TiO inorganic layers and seven SiO (n = 1.487) inorganic layers are alternately stacked, and the sixth composite inorganic multilayer ⑥ may have a structure in which seven TiO inorganic layers and seven SiO (n = 1.463) inorganic layers are alternately stacked. 2 x 2 x 2 x 2 x 2 x 2 x

[0477] As Figure 34B and Figure 34C shown in Figure 34B and Figure 34C , in a relatively low wavelength range (for example, a wavelength range from about 320 nm to about 405 nm), as the refractive index difference between the inorganic layers in the composite inorganic multilayer (or, the composite inorganic layer) increases, the transmittance of the composite inorganic multilayer (or, the composite inorganic layer) decreases.

[0478] As Figure 34B and Figure 34D shown in Figure 34B and Figure 34D , in a relatively high wavelength range, as the refractive index difference between the inorganic layers in the composite inorganic multilayer (or, the composite inorganic layer) increases, the transmittance of the composite inorganic multilayer (or, the composite inorganic layer) increases.

[0479] ​​​​​​​​​​​​​​Accordingly, the greater the refractive index difference between the inorganic layers included in the composite inorganic layer, the greater the UV light blocking effect.

[0480] Figure 35 FIG. 2 is a view showing thicknesses of a sealing unit and related layers according to various embodiments of the present invention.

[0481] The first sealing unit ① may include a SiN x Al on the layer (eg, the upper inorganic layer 752) 2 O 3 Auxiliary inorganic layer and arranged on Al 2 O 3 A first composite inorganic multilayer is on the auxiliary inorganic layer.

[0482] The first composite inorganic multilayer may include five composite inorganic layers L1, L2, L3, L4, and L5. In an exemplary embodiment, for example, the first composite inorganic multilayer may include Al 2 O 3 Five TiO layers 2 Inorganic layer and five Al 2 O 3 Inorganic layer.

[0483] In the first sealing unit①, SiN x The layer may have a thickness of about 5000Å, Al 2 O 3 The auxiliary inorganic layer may have a thickness of about 575 Å, and the TiO 2 The inorganic layer may have a thickness of about 189 Å, and the Al 2 O 3 The inorganic layer may have a thickness of about 771 Å, and the TiO 2 The inorganic layer may have a thickness of about 173 Å, and the Al 2 O 3 The inorganic layer may have a thickness of about 969 Å, and the TiO 2 The inorganic layer may have a thickness of about 152 Å, and the Al 2 O 3 The inorganic layer may have a thickness of about 713 Å, and the TiO 2 The inorganic layer may have a thickness of about 403 Å, and the Al 2 O 3 The inorganic layer may have a thickness of about 318 Å, and the TiO 2 The inorganic layer may have a thickness of about 443 Å, and the Al 2 O3 The inorganic layer may have a thickness of about 1061 Å.

[0484] TiO 2 The total thickness of the inorganic layer is about 1360 Å, including Al 2 O 3 Al of the auxiliary inorganic layer 2 O 3 The total thickness of the inorganic layer is about 4407 Å, and Al 2 O 3 The auxiliary inorganic layer, TiO 2 The inorganic layer and Al 2 O 3 The total thickness of the inorganic layer is about 5767 Å.

[0485] In an exemplary embodiment, the Al of the first sealing unit ① 2 O 3 The auxiliary inorganic layer may be located below the organic layer 755 or below the lower inorganic layer 751, and the first composite inorganic multilayer of the first sealing unit ① may be located below the Al 2 O 3 Auxiliary inorganic layer. In this exemplary embodiment, the first composite inorganic layer L1 of the first composite inorganic multilayer may be located below the Al 2 O 3 Auxiliary inorganic layer, the second composite inorganic layer L2 may be located below the first composite inorganic layer L1, the third composite inorganic layer L3 may be located below the second composite inorganic layer L2, the fourth composite inorganic layer L4 may be located below the third composite inorganic layer L3, and the fifth composite inorganic layer L5 may be located below the fourth composite inorganic layer L4. In other words, the first composite inorganic layer L1 to the fifth composite inorganic layer L5 may be located between the Al 2 O 3 Auxiliary inorganic layer and the common electrode 613. Additionally, in each of the composite inorganic layers, the TiO 2 Inorganic layer and Al 2 O 3 Among the inorganic layers, Al 2 O 3 The inorganic layer is positioned closer to the common electrode 613.

[0486] The second sealing unit ② may include an Al x layer (e.g., the upper inorganic layer 752) disposed on the SiN 2 O 3 Auxiliary inorganic layer and a second composite inorganic multilayer disposed on the Al 2 O 3 Auxiliary inorganic layer.

[0487] The second composite inorganic multilayer may include seven composite inorganic layers L1, L2, L3, L4, L5, L6, and L7. In an exemplary embodiment, for example, the second composite inorganic multilayer may include seven TiO 2 inorganic layers and seven Al 2 O 3 inorganic layers.

[0488] In the second sealing unit ②, the SiN x layer may have a thickness of about 5000 Å, the Al 2 O 3 auxiliary inorganic layer may have a thickness of about 562 Å, the TiO 2 inorganic layer of the first composite inorganic layer L1 may have a thickness of about 74 Å, the Al 2 O 3 inorganic layer of the first composite inorganic layer L1 may have a thickness of about 1470 Å, the TiO 2 inorganic layer of the second composite inorganic layer L2 may have a thickness of about 87 Å, the Al 2 O 3 inorganic layer of the second composite inorganic layer L2 may have a thickness of about 733 Å, the TiO 2 inorganic layer of the third composite inorganic layer L3 may have a thickness of about 248 Å, the Al 2 O 3 inorganic layer of the third composite inorganic layer L3 may have a thickness of about 645 Å, the TiO 2 inorganic layer of the fourth composite inorganic layer L4 may have a thickness of about 202 Å, the Al 2 O 3 inorganic layer of the fourth composite inorganic layer L4 may have a thickness of about 1079 Å, the TiO 2 inorganic layer of the fifth composite inorganic layer L5 may have a thickness of about 108 Å, the Al 2 O 3 inorganic layer of the fifth composite inorganic layer L5 may have a thickness of about 747 Å, the TiO 2 inorganic layer of the sixth composite inorganic layer L6 may have a thickness of about 406 Å, the Al 2 O 3 inorganic layer of the sixth composite inorganic layer L6 may have a thickness of about 295 Å, the TiO 2 inorganic layer of the seventh composite inorganic layer L7 may have a thickness of about 453 Å, and the Al 2 O 3 inorganic layer of the seventh composite inorganic layer L7 may have a thickness of about 1046 Å.

[0489] The total thickness of the TiO 2 inorganic layer is about 1578 Å, including Al 2 O 3Al of the auxiliary inorganic layer 2 O 3 The total thickness of the inorganic layer is about 6577 Å, and Al 2 O 3 The auxiliary inorganic layer, TiO 2 inorganic layer and Al 2 O 3 The total thickness of the inorganic layer is about 8155 Å.

[0490] In an exemplary embodiment, the Al 2 O 3 auxiliary inorganic layer of the second sealing unit ② may be located below the organic layer 755 or below the lower inorganic layer 751, and the second composite inorganic multilayer of the second sealing unit ② may be located below the Al 2 O 3 auxiliary inorganic layer. In this exemplary embodiment, the first composite inorganic layer L1 of the second composite inorganic multilayer may be located below the Al 2 O 3 auxiliary inorganic layer, the second composite inorganic layer L2 may be located below the first composite inorganic layer L1, the third composite inorganic layer L3 may be located below the second composite inorganic layer L2, the fourth composite inorganic layer L4 may be located below the third composite inorganic layer L3, the fifth composite inorganic layer L5 may be located below the fourth composite inorganic layer L4, the sixth composite inorganic layer L6 may be located below the fifth composite inorganic layer L5, and the seventh composite inorganic layer L7 may be located below the sixth composite inorganic layer L6. In other words, the first composite inorganic layer L1 to the seventh composite inorganic layer L7 may be located between the Al 2 O 3 auxiliary inorganic layer and the common electrode 613. Additionally, among the TiO 2 inorganic layer and the Al 2 O 3 inorganic layer in each of the composite inorganic layers, the Al 2 O 3 inorganic layer is positioned closer to the common electrode 613.

[0491] The third sealing unit ③ may include an Al x O 2 auxiliary inorganic layer disposed on an SiN 3 layer (e.g., the upper inorganic layer 752) and a third composite inorganic multilayer disposed on the Al 2 O 3 auxiliary inorganic layer.

[0492] The third composite inorganic multilayer may include five composite inorganic layers L1, L2, L3, L4, and L5. In an exemplary embodiment, for example, the third composite inorganic multilayer may include five TiO 2 inorganic layers and five Al 2 O3 Inorganic layer.

[0493] In the third sealing unit ③, the SiN x layer may have a thickness of about 3000 Å, and the Al 2 O 3 auxiliary inorganic layer may have a thickness of about 575 Å, and the TiO of the first composite inorganic layer L1 2 inorganic layer may have a thickness of about 189 Å, and the Al of the first composite inorganic layer L1 2 O 3 inorganic layer may have a thickness of about 771 Å, and the TiO of the second composite inorganic layer L2 2 inorganic layer may have a thickness of about 173 Å, and the Al of the second composite inorganic layer L2 2 O 3 inorganic layer may have a thickness of about 969 Å, and the TiO of the third composite inorganic layer L3 2 inorganic layer may have a thickness of about 152 Å, and the Al of the third composite inorganic layer L3 2 O 3 inorganic layer may have a thickness of about 713 Å, and the TiO of the fourth composite inorganic layer L4 2 inorganic layer may have a thickness of about 403 Å, and the Al of the fourth composite inorganic layer L4 2 O 3 inorganic layer may have a thickness of about 318 Å, and the TiO of the fifth composite inorganic layer L5 2 inorganic layer may have a thickness of about 443 Å, and the Al of the fifth composite inorganic layer L5 2 O 3 inorganic layer may have a thickness of about 1061 Å.

[0494] TiO 2 The total thickness of the inorganic layer is about 1360 Å, including the Al 2 O 3 The Al of the auxiliary inorganic layer 2 O 3 The total thickness of the inorganic layer is about 4407 Å, and the Al 2 O 3 The auxiliary inorganic layer, the TiO 2 inorganic layer and the Al 2 O 3 The total thickness of the inorganic layer is about 5767 Å.

[0495] In an exemplary embodiment, the Al of the third sealing unit ③ 2 O 3 auxiliary inorganic layer may be located below the organic layer 755 or beneath the lower inorganic layer 751, and the third composite inorganic multilayer of the third sealing unit ③ may be located on the Al 2 O 3Below the auxiliary inorganic layer. In this exemplary embodiment, the first composite inorganic layer L1 of the third composite inorganic multilayer may be located below Al 2 O 3 Below the auxiliary inorganic layer, the second composite inorganic layer L2 may be located below the first composite inorganic layer L1, the third composite inorganic layer L3 may be located below the second composite inorganic layer L2, the fourth composite inorganic layer L4 may be located below the third composite inorganic layer L3, and the fifth composite inorganic layer L5 may be located below the fourth composite inorganic layer L4. In other words, the first composite inorganic layer L1 to the fifth composite inorganic layer L5 may be located between the Al 2 O 3 Auxiliary inorganic layer and the common electrode 613. Additionally, among the TiO 2 Inorganic layer and the Al 2 O 3 Inorganic layer in each of the composite inorganic layers, the Al 2 O 3 Inorganic layer is positioned closer to the common electrode 613.

[0496] The fourth sealing unit ④ may include an Al x O 2 Auxiliary inorganic layer disposed on an SiN 3 Layer (e.g., the upper inorganic layer 752) and a fourth composite inorganic multilayer disposed on the Al 2 O 3 Auxiliary inorganic layer.

[0497] The fourth composite inorganic multilayer may include seven composite inorganic layers L1, L2, L3, L4, L5, L6, and L7. In an exemplary embodiment, for example, the fourth composite inorganic multilayer may include seven TiO 2 Inorganic layers and seven Al 2 O 3 Inorganic layers stacked alternately.

[0498] In the fourth sealing unit ④, the SiN x Layer may have a thickness of about 3000 Å, the Al 2 O 3 Auxiliary inorganic layer may have a thickness of about 562 Å, the TiO 2 Inorganic layer of the first composite inorganic layer L1 may have a thickness of about 74 Å, the Al 2 O 3 Inorganic layer of the first composite inorganic layer L1 may have a thickness of about 1470 Å, the TiO 2 Inorganic layer of the second composite inorganic layer L2 may have a thickness of about 87 Å, the Al 2 O 3 Inorganic layer of the second composite inorganic layer L2 may have a thickness of about 733 Å, the TiO 2The inorganic layer may have a thickness of about 248 Å, and the Al of the third composite inorganic layer L3 2 O 3 The inorganic layer may have a thickness of about 645 Å, and the TiO of the fourth composite inorganic layer L4 2 The inorganic layer may have a thickness of about 202 Å, and the Al of the fourth composite inorganic layer L4 2 O 3 The inorganic layer may have a thickness of about 1079 Å, and the TiO of the fifth composite inorganic layer L5 2 The inorganic layer may have a thickness of about 108 Å, and the Al of the fifth composite inorganic layer L5 2 O 3 The inorganic layer may have a thickness of about 747 Å, and the TiO of the sixth composite inorganic layer L6 2 The inorganic layer may have a thickness of about 406 Å, and the Al of the sixth composite inorganic layer L6 2 O 3 The inorganic layer may have a thickness of about 295 Å, and the TiO of the seventh composite inorganic layer L7 2 The inorganic layer may have a thickness of about 453 Å, and the Al of the seventh composite inorganic layer L7 2 O 3 The inorganic layer may have a thickness of about 1046 Å.

[0499] TiO 2 The total thickness of the inorganic layer is about 1578 Å, including Al 2 O 3 The Al of the auxiliary inorganic layer 2 O 3 The total thickness of the inorganic layer is about 6577 Å, and Al 2 O 3 The auxiliary inorganic layer, TiO 2 The inorganic layer and Al 2 O 3 The total thickness of the inorganic layer is about 8155 Å.

[0500] In an exemplary embodiment, the Al of the fourth sealing unit ④ 2 O 3 The auxiliary inorganic layer may be located below the organic layer 755 or below the lower inorganic layer 751, and the fourth composite inorganic multi-layer of the fourth sealing unit ④ may be located below the Al 2 O 3 The auxiliary inorganic layer. In this exemplary embodiment, the first composite inorganic layer L1 of the fourth composite inorganic multi-layer may be located below the Al 2 O 3Below the auxiliary inorganic layer, the second composite inorganic layer L2 can be located below the first composite inorganic layer L1, the third composite inorganic layer L3 can be located below the second composite inorganic layer L2, the fourth composite inorganic layer L4 can be located below the third composite inorganic layer L3, the fifth composite inorganic layer L5 can be located below the fourth composite inorganic layer L4, the sixth composite inorganic layer L6 can be located below the fifth composite inorganic layer L5, and the seventh composite inorganic layer L7 can be located below the sixth composite inorganic layer L6. In other words, the first composite inorganic layer L1 to the seventh composite inorganic layer L7 can be located between Al 2 O 3 and the common electrode 613. Additionally, in each of the composite inorganic layers, the TiO 2 inorganic layer and the Al 2 O 3 inorganic layer, the Al 2 O 3 inorganic layer is positioned closer to the common electrode 613.

[0501] The fifth sealing unit ⑤ can include an Al x O auxiliary inorganic layer disposed on a SiN layer (e.g., the upper inorganic layer 752) and a fifth composite inorganic multi-layer disposed on the Al 2 O 3 auxiliary inorganic layer. 2 O 3 The fifth composite inorganic multi-layer can include five composite inorganic layers L1, L2, L3, L4, and L5. In an exemplary embodiment, for example, the fifth composite inorganic multi-layer can include five TiO

[0502] inorganic layers and five Al 2 O 2 inorganic layers stacked alternately. 3 In the fifth sealing unit ⑤, the SiN

[0503] layer can have a thickness of about 1000 Å, the Al x O 2 auxiliary inorganic layer can have a thickness of about 117 Å, the TiO 3 inorganic layer of the first composite inorganic layer L1 can have a thickness of about 164 Å, the Al 2 O 2 inorganic layer of the first composite inorganic layer L1 can have a thickness of about 709 Å, the TiO 3 inorganic layer of the second composite inorganic layer L2 can have a thickness of about 250 Å, the Al 2 O 2 inorganic layer of the second composite inorganic layer L2 can have a thickness of about 730 Å, the TiO 3 inorganic layer of the third composite inorganic layer L3 can have a thickness of about 234 Å, the Al 2 inorganic layer of the third composite inorganic layer L3 can have a thickness of about...2 O 3 The inorganic layer may have a thickness of about 643 Å, and the TiO of the fourth composite inorganic layer L4 2 The inorganic layer may have a thickness of about 403 Å, and the Al of the fourth composite inorganic layer L4 2 O 3 The inorganic layer may have a thickness of about 362 Å, and the TiO of the fifth composite inorganic layer L5 2 The inorganic layer may have a thickness of about 409 Å, and the Al of the fifth composite inorganic layer L5 2 O 3 The inorganic layer may have a thickness of about 1107 Å.

[0504] TiO 2 The total thickness of the inorganic layer is about 1460 Å, including Al 2 O 3 Al of the auxiliary inorganic layer 2 O 3 The total thickness of the inorganic layer is about 3668 Å, and Al 2 O 3 The auxiliary inorganic layer, TiO 2 The inorganic layer and Al 2 O 3 The total thickness of the inorganic layer is about 5128 Å.

[0505] In an exemplary embodiment, the Al of the fifth sealing unit ⑤ 2 O 3 The auxiliary inorganic layer may be located below the organic layer 755 or below the lower inorganic layer 751, and the fifth composite inorganic multi-layer of the fifth sealing unit ⑤ may be located below the Al 2 O 3 The auxiliary inorganic layer. In this exemplary embodiment, the first composite inorganic layer L1 of the fifth composite inorganic multi-layer may be located below the Al 2 O 3 The auxiliary inorganic layer, the second composite inorganic layer L2 may be located below the first composite inorganic layer L1, the third composite inorganic layer L3 may be located below the second composite inorganic layer L2, the fourth composite inorganic layer L4 may be located below the third composite inorganic layer L3, and the fifth composite inorganic layer L5 may be located below the fourth composite inorganic layer L4. In other words, the first composite inorganic layer L1 to the fifth composite inorganic layer L5 may be located between the Al 2 O 3 The auxiliary inorganic layer and the common electrode 613. Additionally, in each of the composite inorganic layers, the TiO 2 The inorganic layer and Al 2 O 3 Among the inorganic layers, Al 2 O 3 The inorganic layer is positioned closer to the common electrode 613.

[0506] The sixth sealing unit ⑥ may include an Al x auxiliary inorganic layer disposed on a SiN 2 layer (e.g., the upper inorganic layer 752), and a sixth composite inorganic multi-layer disposed on the Al 3 auxiliary inorganic layer. 2 O 3 The sixth composite inorganic multi-layer may include seven composite inorganic layers L1, L2, L3, L4, L5, L6, and L7. In an exemplary embodiment, for example, the sixth composite inorganic multi-layer may include seven TiO

[0507] inorganic layers and seven Al 2 inorganic layers stacked alternately. 2 O 3 In the sixth sealing unit ⑥, the SiN

[0508] layer may have a thickness of about 1000 Å, the Al x auxiliary inorganic layer may have a thickness of about 117 Å, the TiO 2 O 3 inorganic layer of the first composite inorganic layer L1 may have a thickness of about 35 Å, the Al 2 inorganic layer of the first composite inorganic layer L1 may have a thickness of about 1040 Å, the TiO 2 O 3 inorganic layer of the second composite inorganic layer L2 may have a thickness of about 206 Å, the Al 2 O 2 inorganic layer of the second composite inorganic layer L2 may have a thickness of about 545 Å, the TiO 3 inorganic layer of the third composite inorganic layer L3 may have a thickness of about 371 Å, the Al 2 inorganic layer of the third composite inorganic layer L3 may have a thickness of about 531 Å, the TiO 2 O 3 inorganic layer of the fourth composite inorganic layer L4 may have a thickness of about 253 Å, the Al 2 inorganic layer of the fourth composite inorganic layer L4 may have a thickness of about 962 Å, the TiO 2 O 3 inorganic layer of the fifth composite inorganic layer L5 may have a thickness of about 153 Å, the Al 2 inorganic layer of the fifth composite inorganic layer L5 may have a thickness of about 667 Å, the TiO 2 O 3 inorganic layer of the sixth composite inorganic layer L6 may have a thickness of about 459 Å, the Al 2 inorganic layer of the sixth composite inorganic layer L6 may have a thickness of about 259 Å, the TiO 2 O 3 inorganic layer of the seventh composite inorganic layer L7 may have a thickness of about 459 Å, the Al 2The inorganic layer may have a thickness of about 470 Å, and the Al of the seventh composite inorganic layer L7 2 O 3 The inorganic layer may have a thickness of about 1047 Å.

[0509] TiO 2 The total thickness of the inorganic layer is about 1947 Å, including Al 2 O 3 The Al of the auxiliary inorganic layer 2 O 3 The total thickness of the inorganic layer is about 5168 Å, and the Al 2 O 3 The auxiliary inorganic layer, TiO 2 The inorganic layer and Al 2 O 3 The total thickness of the inorganic layer is about 7115 Å.

[0510] In an exemplary embodiment, the Al of the sixth sealing unit ⑥ 2 O 3 The auxiliary inorganic layer may be located below the organic layer 755 or below the lower inorganic layer 751, and the sixth composite inorganic multi-layer of the sixth sealing unit ⑥ may be located below the Al 2 O 3 The auxiliary inorganic layer. In this exemplary embodiment, the first composite inorganic layer L1 of the sixth composite inorganic multi-layer may be located below the Al 2 O 3 The auxiliary inorganic layer, the second composite inorganic layer L2 may be located below the first composite inorganic layer L1, the third composite inorganic layer L3 may be located below the second composite inorganic layer L2, the fourth composite inorganic layer L4 may be located below the third composite inorganic layer L3, the fifth composite inorganic layer L5 may be located below the fourth composite inorganic layer L4, the sixth composite inorganic layer L6 may be located below the fifth composite inorganic layer L5, and the seventh composite inorganic layer L7 may be located below the sixth composite inorganic layer L6. In other words, the first composite inorganic layer L1 to the seventh composite inorganic layer L7 may be located between the Al 2 O 3 The auxiliary inorganic layer and the common electrode 613. Additionally, among the TiO 2 The inorganic layer and Al 2 O 3 In the inorganic layer, the Al 2 O 3 The inorganic layer is positioned closer to the common electrode 613.

[0511] The seventh sealing unit ⑦ may include the Al 2 O 3 The auxiliary inorganic layer and is disposed on the Al 2 O 3The seventh composite inorganic multilayer on the auxiliary inorganic layer. In an exemplary embodiment, Al of the seventh sealing unit ⑦ 2 O 3 The auxiliary inorganic layer may be disposed on the organic layer 755.

[0512] The seventh composite inorganic multilayer may include five composite inorganic layers L1, L2, L3, L4, and L5. In an exemplary embodiment, for example, the seventh composite inorganic multilayer may include five TiO 2 inorganic layers and five Al 2 O 3 inorganic layers stacked alternately.

[0513] In the seventh sealing unit ⑦, the SiN x layer may have a thickness of about 0 Å, the Al 2 O 3 The auxiliary inorganic layer may have a thickness of about 117 Å, the TiO 2 inorganic layer of the first composite inorganic layer L1 may have a thickness of about 164 Å, the Al 2 O 3 inorganic layer of the first composite inorganic layer L1 may have a thickness of about 709 Å, the TiO 2 inorganic layer of the second composite inorganic layer L2 may have a thickness of about 250 Å, the Al 2 O 3 inorganic layer of the second composite inorganic layer L2 may have a thickness of about 730 Å, the TiO 2 inorganic layer of the third composite inorganic layer L3 may have a thickness of about 234 Å, the Al 2 O 3 inorganic layer of the third composite inorganic layer L3 may have a thickness of about 643 Å, the TiO 2 inorganic layer of the fourth composite inorganic layer L4 may have a thickness of about 403 Å, the Al 2 O 3 inorganic layer of the fourth composite inorganic layer L4 may have a thickness of about 362 Å, the TiO 2 inorganic layer of the fifth composite inorganic layer L5 may have a thickness of about 409 Å, and the Al 2 O 3 inorganic layer of the fifth composite inorganic layer L5 may have a thickness of about 1107 Å.

[0514] The total thickness of the TiO 2 inorganic layer is about 1460 Å, including the Al 2 O 3 The total thickness of the Al 2 O 3 inorganic layer of the auxiliary inorganic layer is about 3668 Å, and the Al 2 O 3 The auxiliary inorganic layer, TiO2 Inorganic layer and Al 2 O 3 The total thickness of the inorganic layer is about 5128 Å.

[0515] In an exemplary embodiment, the Al of the seventh sealing unit ⑦ 2 O 3 The auxiliary inorganic layer may be located below the organic layer 755 or below the lower inorganic layer 751, and the seventh composite inorganic multilayer of the seventh sealing unit ⑦ may be located below the Al 2 O 3 auxiliary inorganic layer. In this exemplary embodiment, the first composite inorganic layer L1 of the seventh composite inorganic multilayer may be located below the Al 2 O 3 auxiliary inorganic layer, the second composite inorganic layer L2 may be located below the first composite inorganic layer L1, the third composite inorganic layer L3 may be located below the second composite inorganic layer L2, the fourth composite inorganic layer L4 may be located below the third composite inorganic layer L3, and the fifth composite inorganic layer L5 may be located below the fourth composite inorganic layer L4. In other words, the first to fifth composite inorganic layers L1 to L5 may be located between the Al 2 O 3 auxiliary inorganic layer and the common electrode 613. Additionally, in each of the composite inorganic layers, TiO 2 inorganic layer and Al 2 O 3 Among the inorganic layers, the Al 2 O 3 inorganic layer is positioned closer to the common electrode 613.

[0516] The eighth sealing unit ⑧ may include an Al 2 O 3 auxiliary inorganic layer and an eighth composite inorganic multilayer disposed on the Al 2 O 3 auxiliary inorganic layer. In an exemplary embodiment, the Al of the eighth sealing unit ⑧ 2 O 3 auxiliary inorganic layer may be disposed on the organic layer 755.

[0517] The eighth composite inorganic multilayer may include seven composite inorganic layers L1, L2, L3, L4, L5, L6, and L7. In an exemplary embodiment, for example, the eighth composite inorganic multilayer may include seven TiO 2 inorganic layers and seven Al 2 O 3 inorganic layers stacked alternately.

[0518] In the eighth sealing unit ⑧, the SiN x layer may have a thickness of about 0 Å, and the Al 2 O 3The auxiliary inorganic layer may have a thickness of about 117 Å, and the TiO of the first composite inorganic layer L1 2 The inorganic layer may have a thickness of about 35 Å, and the Al of the first composite inorganic layer L1 2 O 3 The inorganic layer may have a thickness of about 1040 Å, and the TiO of the second composite inorganic layer L2 2 The inorganic layer may have a thickness of about 206 Å, and the Al of the second composite inorganic layer L2 2 O 3 The inorganic layer may have a thickness of about 545 Å, and the TiO of the third composite inorganic layer L3 2 The inorganic layer may have a thickness of about 371 Å, and the Al of the third composite inorganic layer L3 2 O 3 The inorganic layer may have a thickness of about 531 Å, and the TiO of the fourth composite inorganic layer L4 2 The inorganic layer may have a thickness of about 253 Å, and the Al of the fourth composite inorganic layer L4 2 O 3 The inorganic layer may have a thickness of about 962 Å, and the TiO of the fifth composite inorganic layer L5 2 The inorganic layer may have a thickness of about 153 Å, and the Al of the fifth composite inorganic layer L5 2 O 3 The inorganic layer may have a thickness of about 667 Å, and the TiO of the sixth composite inorganic layer L6 2 The inorganic layer may have a thickness of about 459 Å, and the Al of the sixth composite inorganic layer L6 2 O 3 The inorganic layer may have a thickness of about 259 Å, and the TiO of the seventh composite inorganic layer L7 2 The inorganic layer may have a thickness of about 470 Å, and the Al of the seventh composite inorganic layer L7 2 O 3 The inorganic layer may have a thickness of about 1047 Å.

[0519] TiO 2 The total thickness of the TiO inorganic layer is about 1947 Å, including Al 2 O 3 The Al of the auxiliary inorganic layer 2 O 3 The total thickness of the inorganic layer is about 5168 Å, and Al 2 O 3 The auxiliary inorganic layer, TiO 2 The inorganic layer and Al 2 O 3 The total thickness of the inorganic layer is about 7115 Å.

[0520] In an exemplary embodiment, the Al of the eighth sealing unit ⑧ 2 O 3The auxiliary inorganic layer may be located below the organic layer 755 or below the lower inorganic layer 751, and the eighth composite inorganic multilayer of the eighth sealing unit ⑧ may be located below the Al 2 O 3 auxiliary inorganic layer. In this exemplary embodiment, the first composite inorganic layer L1 of the eighth composite inorganic multilayer may be located below the Al 2 O 3 auxiliary inorganic layer, the second composite inorganic layer L2 may be located below the first composite inorganic layer L1, the third composite inorganic layer L3 may be located below the second composite inorganic layer L2, the fourth composite inorganic layer L4 may be located below the third composite inorganic layer L3, the fifth composite inorganic layer L5 may be located below the fourth composite inorganic layer L4, the sixth composite inorganic layer L6 may be located below the fifth composite inorganic layer L5, and the seventh composite inorganic layer L7 may be located below the sixth composite inorganic layer L6. In other words, the first composite inorganic layer L1 to the seventh composite inorganic layer L7 may be located between the Al 2 O 3 auxiliary inorganic layer and the common electrode 613. Additionally, among the TiO 2 inorganic layer and the Al 2 O 3 inorganic layer in each of the composite inorganic layers, the Al 2 O 3 inorganic layer is positioned closer to the common electrode 613.

[0521] In an exemplary embodiment, the sealing unit 750 according to various embodiments of the present invention may also be applied to a flexible display device.

[0522] Figure 36 To show Figure 1 a detailed configuration diagram of the scan driver.

[0523] As Figure 36 shown, the scan driver 102 includes a plurality of driving switch elements TR. The plurality of driving switch elements TR may be connected to a plurality of clock lines CL.

[0524] Each of the driving switch elements TR receives a clock signal from the corresponding clock line CL and generates and outputs a scan signal based on the clock signal.

[0525] The above-mentioned coupling recess 220 and extension 750b may be located in the non-display area 100b of the substrate 100. In an exemplary embodiment, for example, the coupling recess 220 and extension 750b in the non-display area 100b may be located between adjacent clock lines CL.

[0526] In an alternative exemplary embodiment, although not shown, the above-described coupling recess 220 and the extension portion 750b may be located between different clock lines connected to the emission control driver 103. That is, the above-described coupling recess 220 and the extension portion 750b may be located between adjacent clock lines among different clock lines.

[0527] In an alternative exemplary embodiment, although not shown, the above-described coupling recess 220 and the extension portion 750b may be disposed on any part of the substrate 100 as long as they do not overlap with conductive patterns (e.g., scan lines, emission control lines, data lines, etc.).

[0528] Figures 37A to 37M A cross-sectional view for explaining a manufacturing process of a display device according to an exemplary embodiment of the present invention.

[0529] First, as Figure 37A shown, a first layer 111, a second layer 112, a third layer 113, a fourth layer 114, a buffer layer 120, a semiconductor layer 321, a gate insulating layer 140, a first insulating intermediate layer 150, a second insulating intermediate layer 160, a planarization layer 180, and a pixel electrode PE are sequentially formed on a carrier substrate 101.

[0530] In addition, a first gate electrode GE1, a second gate electrode GE2, a third gate electrode GE3, a fourth gate electrode GE4, a fifth gate electrode GE5, a sixth gate electrode GE6, a seventh gate electrode GE7, an (n - 1)th scan line SLn - 1, an nth scan line SLn, an (n + 1)th scan line SLn + 1, an emission control line EL, an initialization line IL, a capacitor electrode 201, a first connection electrode 701, a second connection electrode 702, a third connection electrode 703, a data line DL, and a high potential line VDL are also formed on the carrier substrate 101.

[0531] Next, as Figure 37B shown, an intermediate light-blocking layer 190a is formed on the pixel electrode PE and the planarization layer 180. In an exemplary embodiment, for example, the intermediate light-blocking layer 190a may be formed on the pixel electrode PE and the planarization layer 180 by a chemical vapor deposition (“CVD”) method.

[0532] In an exemplary embodiment, for example, the intermediate light-blocking layer 190a may include, for example, a polyimide-based resin.

[0533] Next, as Figure 37CAs shown, an etching process is performed using the intermediate light-blocking layer 190a as a mask. Through this etching process, the planarization layer 180, the second insulating intermediate layer 160, the first insulating intermediate layer 150, and the gate insulating layer 140 are sequentially patterned. In other words, the portions of the planarization layer 180, the second insulating intermediate layer 160, the first insulating intermediate layer 150, and the gate insulating layer 140 that are exposed by the intermediate light-blocking layer 190a are selectively removed. Accordingly, a third intermediate hole 3 and a second intermediate hole 2 for exposing the buffer layer 120 are defined.

[0534] In an exemplary embodiment, for example, the planarization layer 180, the second insulating intermediate layer 160, the first insulating intermediate layer 150, and the gate insulating layer 140 may be removed by a dry etching method using an etching gas.

[0535] Then, as Figure 37D shown, an ashing process is performed. As a part of the intermediate light-blocking layer 190a is removed through this ashing process, the light-blocking layer 190 and the third hole 23 are formed. The light-blocking layer 190 has a thickness and a width smaller than those of the intermediate light-blocking layer 190a, and the third hole 23 has a width larger than the width of the third intermediate hole 3.

[0536] Next, although not shown, a photoresist is formed over the entire surface of the carrier substrate 101 including the light-blocking layer 190.

[0537] Then, as Figure 37E shown, when a part of the photoresist is selectively removed through an exposure process and a development process, a photoresist pattern PR is formed. The photoresist pattern PR exposes a part of the buffer layer 120. That is, the photoresist pattern PR masks the remaining part except for a part of the buffer layer 120.

[0538] Next, as Figure 37F shown, an etching process is performed using the photoresist pattern PR as a mask. Through this etching process, the buffer layer 120 and the fourth layer 114 are sequentially patterned. In other words, the portions of the buffer layer 120 and the fourth layer 114 that are exposed by the photoresist pattern PR are selectively removed. Accordingly, a second hole 22 and a first hole 21 for exposing the third layer 113 are formed.

[0539] In an exemplary embodiment, for example, each of the buffer layer 120 and the fourth layer 114 described above may be removed by a dry etching method using an etching gas.

[0540] Since the buffer layer 120 and the fourth layer 114 include inorganic materials, they can be removed by the dry etching method described above. However, since the third layer 113 located below the fourth layer 114 includes an organic material, it may not be easily removed by a general dry etching method.

[0541] In an exemplary embodiment, Figure 37E and Figure 37F the process shown in Figure 1 can be performed substantially simultaneously with the step of removing the insulating layer at the bent portion 77 of the display device 5555 shown in

[0542] The display device 5555 is bent with respect to the bent portion 77. In an exemplary embodiment, for example, the portion of the display device 5555 where the data driver 104 is located is bent with respect to the bent portion 77 when rotating toward the rear surface of the display device 5555. In this exemplary embodiment, the process of removing the insulating layer of the bent portion 77 is performed so that the display device 5555 can be bent well.

[0543] During the etching process for removing the insulating layer of the bent portion 77, the buffer layer 120 and the fourth layer 114 described above can be removed together. In this exemplary embodiment, the buffer layer 120 and the fourth layer 114 can be selectively removed without any additional process.

[0544] Next, as Figure 37G shown in

[0545] Figure 37G 2 ), an etching process is performed using the photoresist pattern PR as a mask. The surface of the third layer 113 is patterned by this etching process. In other words, the portion of the surface of the third layer 113 exposed by the photoresist pattern PR is selectively removed. Accordingly, a recess 20 is defined in the exposed surface of the third layer 113. Figure 37G During the oxygen etching process of

[0546] As the oxygen etching time increases, more of the third layer 113 is removed and the width of the recess 20 increases. In an exemplary embodiment, since the fourth layer 114 is substantially not removed during the oxygen etching process, the width of the first hole 21 is substantially maintained. When the width of the recess 20 of the third layer 113 becomes greater than the width of the first hole 21 due to a sufficiently long oxygen etching time, an undercut phenomenon occurs, in which the recess 20 extends under the fourth layer 114. In other words, when the oxygen etching is performed for a long time until the undercut phenomenon of the third layer 113 occurs, the recess 20 of the third layer 113 may have a width greater than the width of the first hole 21 of the fourth layer 114.

[0547] Subsequently, as shown in Figure 37H , when the photoresist pattern PR is removed, a coupling recess 220 including the recess 20, the first hole 21, the second hole 22, and the third hole 23 is defined.

[0548] Thereafter, as shown in Figure 37I , the light-emitting layer 512 and the common electrode 613 are sequentially formed. The light-emitting layer 512 is disposed on the pixel electrode PE in the light-emitting region 900, and the common electrode 613 is formed on the light-blocking layer 190 and the light-emitting layer 512. In addition, the common electrode 613 is formed along the inner wall of the coupling recess 220 (i.e., the portion of each layer exposed by the coupling recess 220).

[0549] Next, as shown in Figures 37J to 37L , a sealing unit 750 is formed. The sealing unit 750 includes an inorganic layer 751, an organic layer 755, and an upper inorganic layer 752. A method for manufacturing the sealing unit 750 will be described below.

[0550] First, as shown in Figure 37J , a first inorganic layer 751 is formed on the common electrode 613.

[0551] Next, as shown in Figure 37K , an organic layer 755 is formed on the first inorganic layer 751.

[0552] Next, as shown in Figure 37L , a second inorganic layer 752 is formed on the organic layer 755.

[0553] As shown in Figure 37L , the sealing unit 750 manufactured by Figures 37J to 37L includes a cover portion 750a and an extension portion 750b. As shown in Figure 37L , the extension portion 750b is passed through the third hole 23, the second hole 22, and the first hole 21 to be inserted into the recess 20.

[0554] Next, as shown in Figure 37MAs shown in [reference], the carrier substrate 101 is removed from the first layer 111.

[0555] Next, as Figure 6 shown in [reference], the base layer 110 is attached to the first layer 111.

[0556] Figure 38 is a view for explaining the method of defining the recess using a laser.

[0557] Figure 37G The recess 20 in the third layer 113 shown in [reference] can be defined using a laser beam instead of the above-described oxygen etching.

[0558] In an exemplary embodiment, for example, as Figure 38 shown in [reference], after the process of Figure 37F , the laser beam LL emitted from the laser device LS is made incident on the surface of the third layer 113. Then, the surface thereof is removed by the laser beam LL to define the recess 20. In other words, the portion of the surface of the third layer 113 exposed by the photoresist pattern PR is selectively removed by the laser beam LL. Accordingly, the recess 20 is defined in the exposed surface of the third layer 113.

[0559] In this exemplary embodiment, when the emission time of the laser beam LL is long enough or the intensity is strong enough, the above-described undercut phenomenon occurs in the third layer 113. In other words, when the emission time or intensity of the laser beam LL is adjusted to such an extent that the undercut phenomenon occurs in the third layer 113, the recess 20 of the third layer 113 can have a width larger than the width of the first hole 21 of the fourth layer 114.

[0560] In an exemplary embodiment, the above-described laser beam LL can be emitted after removing the photoresist pattern PR. Specifically, the photoresist pattern PR can be removed immediately after Figure 37F , and then the laser beam LL can be emitted toward the exposed surface of the third layer 113.

[0561] Figure 39 is a cross-sectional view taken along the line II-II' according to another exemplary embodiment of the present invention, and Figure 3 is a view magnifying the portion A of Figure 40 . The sealing unit 750 and the common electrode 613 are omitted in Figure 39 Figure 40 . In

[0562] As Figure 39As shown, a part of the sealing unit 750 is inserted into the pixel circuit unit 200. In an exemplary embodiment, for example, the sealing unit 750 includes a cover portion 750a and an extension portion 750b extending from the cover portion 750a toward the pixel circuit unit 200, and the extension portion 750b is inserted into the pixel circuit unit 200.

[0563] For this purpose, holes or recessed portions are formed in the pixel circuit unit 200 and the light-blocking layer 190 at portions corresponding to the extension portion 750b of the sealing unit 750. In an exemplary embodiment, for example, a recessed portion 40, a first hole 41, and a second hole 42 are formed in the pixel circuit unit 200 and are positioned to correspond to the extension portion 750b, and a third hole 43 is formed in the light-blocking layer 190 and is positioned to correspond to the extension portion 750b.

[0564] The recessed portion 40 of the pixel circuit unit 200 may be located, for example, in the first insulating intermediate layer 150 of the pixel circuit unit 200. For example, the first hole 41 of the pixel circuit unit 200 may be located in the second insulating intermediate layer 160 of the pixel circuit unit 200. The second hole 42 of the pixel circuit unit 200 may be located in the planarization layer 180 of the pixel circuit unit 200.

[0565] The recessed portion 40, the first hole 41, the second hole 42, and the third hole 43 are positioned to correspond to each other. In addition, two adjacent ones of the recessed portion 40, the first hole 41, the second hole 42, and the third hole 43 are connected to each other.

[0566] The first hole 41 may be located between the recessed portion 40 and the second hole 42.

[0567] As Figure 39 and Figure 40 shown, the recessed portion 40 has a width (or diameter) that gradually increases in a direction from the first insulating intermediate layer 150 toward the second insulating intermediate layer 160 (e.g., the Z-axis direction). As Figure 40 shown, the width 40d (or diameter) of the recessed portion 40 is a value measured in the X-axis direction (or Y-axis direction). As used herein, the width 40d (or diameter) of the recessed portion 40 means the maximum width (or maximum diameter) or the average width (or average diameter) of the recessed portion 40.

[0568] At least one of the inner walls W11 and W22 of the recessed portion 40 facing each other is inclined at a predetermined angle with respect to the interfaces S11 and S22 between the first insulating intermediate layer 150 and the second insulating intermediate layer 160. In an exemplary embodiment, for example, the angle defined between at least one of the inner walls W11 and W22 facing each other and the interfaces S11 and S22 is an obtuse angle. As a more specific example, the angle θ11 defined between the inner wall W11 and the interface S11 adjacent to the inner wall W11 is an obtuse angle.

[0569] The first hole 41 has a width (or diameter) that gradually increases in the Z-axis direction. The width 41d (or diameter) of the first hole 41 is a value measured in the X-axis direction (or Y-axis direction). In this exemplary embodiment, the width 41d (or diameter) of the first hole 41 means the maximum width (or maximum diameter) or the average width (or average diameter) of the first hole 41.

[0570] The second hole 42 has a width (or diameter) that gradually increases in the Z-axis direction. The width 42d (or diameter) of the second hole 42 is a value measured in the X-axis direction (or Y-axis direction). In this exemplary embodiment, the width 42d (or diameter) of the second hole 42 means the maximum width (or maximum diameter) or the average width (or average diameter) of the second hole 42.

[0571] The third hole 43 has a width (or diameter) that gradually increases in the Z-axis direction. The width 43d (or diameter) of the third hole 43 is a value measured in the X-axis direction (or Y-axis direction). In this exemplary embodiment, the width 43d (or diameter) of the third hole 43 means the maximum width (or maximum diameter) or the average width (or average diameter) of the third hole 43.

[0572] The width 40d (or diameter) of the recess 40 is greater than the width 41d (or diameter) of the first hole 41. As Figure 40 shown, the cross-sections of the recess 40 and the first hole 41 may have an anchor shape. In this exemplary embodiment, the cross-section of the extension 750b inserted into the recess 40 and the first hole 41 may also have an anchor shape.

[0573] From a planar view, the first hole 41 is surrounded by the recess 40. Additionally, from Figure 1 the planar view, the first hole 41 and the recess 40 overlap each other.

[0574] From a planar view, the first hole 41, the second hole 42, and the recess 40 are surrounded by the third hole 43.

[0575] The width 42d (or diameter) of the second hole 42 is greater than the width 41d (or diameter) of the first hole 41.

[0576] The width 43d (or diameter) of the third hole 43 is greater than the width 42d (or diameter) of the second hole 42.

[0577] The extension portion 750b of the above-described sealing unit 750 is inserted (or buried) into the recess 40, the first hole 41, the second hole 42, and the third hole 43 having such a structure. In an exemplary embodiment, for example, the extension portion 750b sequentially passes through the third hole 43, the second hole 42, and the first hole 41 and is inserted into the recess 40. In this exemplary embodiment, since the width 40d (or diameter) of the recess 40 is greater than the width 41d (or diameter) of the first hole 41, the extension portion 750b inserted into the recess 40, the first hole 41, the second hole 42, and the third hole 43 is not easily separated in the Z-axis direction. Accordingly, the coupling force between the sealing unit 750 and the underlying structure can be improved.

[0578] The above-described recess 40, the first hole 41, the second hole 42, and the third hole 43 may be located in the display area 100a of the substrate 100. In an exemplary embodiment, for example, when the entire hole including the recess 40, the first hole 41, the second hole 42, and the third hole 43 is defined as a coupling recess 440, the coupling recess 440 and the extension portion 750b may be located in the display area 100a of the substrate 100.

[0579] The extension portion 750b and the coupling recess 440 in the display area 100a may be located between the high potential line VDL and the data line DL adjacent to each other.

[0580] The above-described coupling recess 440 and the extension portion 750b may be located in the non-display area 100b of the substrate 100. In an exemplary embodiment, for example, the coupling recess 440 and the extension portion 750b in the non-display area 100b may be located between adjacent clock lines CL.

[0581] In addition, although not shown, the above-described coupling recess 440 and the extension portion 750b may be located between the clock lines connected to the emission control driver 103.

[0582] Figure 39 The recess shown in may be defined by the above-described oxygen etching or the laser beam LL. In this exemplary embodiment, the first insulating intermediate layer 150 may include an organic material, and the second insulating intermediate layer 160 may include an inorganic material.

[0583] In an exemplary embodiment, when both the first insulating intermediate layer 150 and the second insulating intermediate layer 160 include inorganic materials, the first insulating intermediate layer 150 and the second insulating intermediate layer 160 can be removed by a general dry etching method. In such an exemplary embodiment, it is desirable to increase the difference between the etching rate of the first insulating intermediate layer 150 and the etching rate of the second insulating intermediate layer 160. In an exemplary embodiment, for example, it is desirable that the first insulating intermediate layer 150 has an etching rate higher than that of the second insulating intermediate layer 160.

[0584] Figure 41 is a cross-sectional view taken along line II-II' according to another exemplary embodiment Figure 3 of.

[0585] As Figure 41 shown, one of the inner walls of the recess 20 facing each other and one of the inner walls of the first hole 21 facing each other can be located on a straight line. Accordingly, the cross-section of the recess 20 can have an asymmetrical shape with respect to the Z-axis.

[0586] In an exemplary embodiment, for example, when the recess 20 and the first hole 21 located on the Figure 41 left side of are respectively defined as the left recess and the first left hole, and the recess 20 and the first hole 21 located on the Figure 41 right side of are respectively defined as the right recess and the first right hole, the right inner wall of the left recess and the right inner wall of the first left hole are located on a straight line, and the left inner wall of the right recess and the left inner wall of the first right hole are located on a straight line.

[0587] Figure 41 The structure of the recess 20 shown in can be formed by the above-described laser beam LL. In an exemplary embodiment, for example, the recess 20 having the Figure 41 structure shown in can be defined by adjusting the emission angle of the laser beam LL.

[0588] Figure 42 is a cross-sectional view taken along line II-II' according to another exemplary embodiment Figure 3 of.

[0589] As Figure 42 shown, one of the inner walls of the recess 40 facing each other and one of the inner walls of the first hole 41 facing each other can be located on a straight line. Accordingly, the cross-section of the recess 40 can have an asymmetrical shape with respect to the Z-axis.

[0590] In an exemplary embodiment, for example, when the recess 40 and the first hole 41 located on the Figure 42 left side of are respectively defined as the left recess and the first left hole, and the recess 40 and the first hole 41 located on the Figure 42When the recess 40 and the first hole 41 on the right side thereof are defined as the right recess and the first right hole, respectively, the right inner wall of the left recess and the right inner wall of the first left hole are located on a straight line, and the left inner wall of the right recess and the left inner wall of the first right hole are located on a straight line.

[0591] Figure 42 The structure of the recess 40 shown in [the figure] can be formed by the above-described laser beam LL. In an exemplary embodiment, for example, having Figure 42 The recess 40 having the structure shown [in the figure] can be defined by adjusting the emission angle of the laser beam LL.

[0592] As described above, a display device according to one or more embodiments can provide the following effects.

[0593] First, the sealing unit is coupled to the recess of the substrate or the pixel circuit unit. Accordingly, the coupling force between the sealing unit and the substrate can be improved. Through this enhancement of the coupling force, the dead zone of the display device can be substantially minimized.

[0594] Second, the sealing unit including the composite inorganic layer according to one or more embodiments of the present invention can have excellent UV light blocking ability.

[0595] Third, the adhesiveness between the inorganic layers in the composite inorganic layer according to one or more embodiments of the present invention can be improved.

[0596] Fourth, the coupling force between the sealing unit and the substrate can be improved.

[0597] Although the present invention has been shown and described with reference to exemplary embodiments of the present invention, it will be apparent to those of ordinary skill in the art that various changes in form and detail can be made therein without departing from the scope and spirit of the exemplary embodiments of the present invention.

Claims

1. Display device, comprising: a substrate; a pixel circuit unit, the pixel circuit unit being disposed on the substrate and having a first hole; a light-blocking layer, the light-blocking layer being disposed on the pixel circuit unit and having a second hole, the second hole being positioned to correspond to the first hole; a light-emitting layer, the light-emitting layer being disposed on the pixel circuit unit to correspond to the light-emitting region defined by the light-blocking layer; and a sealing unit, the sealing unit being located on the light-blocking layer, wherein the substrate includes: a first layer having a recess corresponding to the first hole; and a second layer, the second layer being disposed between the first layer and the pixel circuit unit and having a third hole located between the recess and the second hole, the sealing unit includes: a cover portion, the cover portion being disposed on the light-blocking layer; and an extension portion, the extension portion extending from the cover portion to be inserted into the first hole, the second hole, the third hole, and the recess, and the recess has a width greater than the width of the third hole.

2. The display device according to claim 1, wherein, the recess has a width that gradually increases in a direction from the first layer toward the second layer.

3. The display device according to claim 2, wherein, at least one of the inner walls of the recess facing each other is inclined at a predetermined angle with respect to the interface between the first layer and the second layer.

4. The display device according to claim 3, wherein, the angle defined between the at least one of the inner walls of the recess facing each other and the interface is an obtuse angle.

5. The display device according to claim 1, wherein, in a plan view, the third hole is surrounded by the recess.

6. The display device according to claim 1, wherein, the third hole overlaps with the recess.

7. The display device according to claim 1, wherein, the first hole, the second hole, the third hole, and the recess are located in at least one of the display area and the non-display area of the substrate.

8. The display device according to claim 7, wherein, the first hole, the second hole, the third hole, and the recess are located between a high-potential line and a data line disposed in the display area and adjacent to each other.

9. The display device according to claim 7, further comprising: a driving circuit unit, the driving circuit unit being located in the non-display area and connected to a scan line or an emission control line of the pixel circuit unit.

10. The display device according to claim 9, further comprising: a plurality of clock lines, the plurality of clock lines being disposed in the non-display area and connected to the driving circuit unit, wherein the first hole, the second hole, the third hole, and the recess are located between adjacent clock lines among the plurality of clock lines.

11. The display device according to claim 1, wherein, one of the inner walls of the recess facing each other and one of the inner walls of the first hole facing each other are on a straight line.

12. The display device according to claim 1, wherein, One of the first layer and the second layer includes an organic material, and the other of the first layer and the second layer includes an inorganic material.

13. Display device, comprising: a substrate; a pixel circuit unit located on the substrate; a light-blocking layer disposed on the pixel circuit unit and having a first hole; a light-emitting layer disposed on the pixel circuit unit to correspond to a light-emitting region defined by the light-blocking layer; and a sealing unit disposed on the light-blocking layer, wherein the pixel circuit unit includes: a first layer having a recess corresponding to the first hole; a second layer disposed on the first layer and having a second hole located between the recess and the first hole; and a third layer disposed on the second layer and having a third hole located between the second hole and the first hole, the sealing unit includes: a cover portion disposed on the light-blocking layer; and an extension portion extending from the cover portion to be inserted into the first hole, the second hole, the third hole, and the recess, and the recess has a width greater than the width of the second hole.

14. The display device according to claim 13, wherein, the recess has a width that gradually increases in a direction from the first layer toward the second layer.

15. The display device according to claim 14, wherein, at least one of the inner walls of the recess facing each other is inclined at a predetermined angle with respect to an interface between the first layer and the second layer.

16. The display device according to claim 15, wherein, an angle defined between the at least one of the inner walls of the recess facing each other and the interface is an obtuse angle.

17. The display device according to claim 13, wherein, the first hole, the second hole, the third hole, and the recess are located in at least one of a display region and a non-display region of the substrate.

18. A method of manufacturing a display device, the method comprising: preparing a carrier substrate; sequentially forming a first layer and a second layer on the carrier substrate; forming a pixel circuit unit on the second layer; forming a light-blocking layer on the pixel circuit unit, the light-blocking layer defining a light-emitting region; forming a first hole through the light-blocking layer; forming a second hole corresponding to the first hole through an insulating layer of the pixel circuit unit; forming a third hole corresponding to the second hole through the second layer; forming a recess in the first layer to correspond to the third hole, wherein the recess has a width greater than the width of the third hole; and forming a sealing unit, wherein the sealing unit includes: a cover portion located on the light-blocking layer; and an extension portion extending from the cover portion to be embedded in the first hole, the second hole, the third hole, and the recess.

19. The method according to claim 18, wherein, the recess is defined by oxygen dry etching or a laser beam.

20. The method according to claim 18, wherein, The first layer includes an organic material, and the second layer includes an inorganic material.

21. The method according to claim 18, wherein, when defining the third hole by selectively removing the second layer, the insulating layer of the bent portion of the display device is removed together.

22. A display device, comprising: a substrate; a switching element located on the substrate; a pixel electrode disposed on the switching element and connected to the switching element; a light-emitting layer located on the pixel electrode; a common electrode located on the light-emitting layer; and a sealing unit disposed on the common electrode, wherein the sealing unit includes: an organic layer; and at least one first composite inorganic layer disposed between the organic layer and the common electrode, the at least one first composite inorganic layer includes: a first inorganic layer located between the common electrode and the organic layer; and a second inorganic layer located between the first inorganic layer and the organic layer, the first inorganic layer and the second inorganic layer have different refractive indices from each other and are in contact with each other, and wherein the sealing unit includes: a cover portion disposed on the common electrode; and an extension portion extending from the cover portion toward the substrate and inserted into the substrate.

23. The display device according to claim 22, wherein, the refractive index of the first inorganic layer is higher than the refractive index of the second inorganic layer.

24. The display device according to claim 22, wherein, the second inorganic layer included in one of the adjacent first composite inorganic layers in the at least one first composite inorganic layer faces the first inorganic layer included in the other of the adjacent first composite inorganic layers in the at least one first composite inorganic layer, and the second inorganic layer included in one of the adjacent first composite inorganic layers in the at least one first composite inorganic layer and the first inorganic layer included in the other of the adjacent first composite inorganic layers in the at least one first composite inorganic layer have different refractive indices from each other.

25. The display device according to claim 24, wherein, the second inorganic layer included in one of the adjacent first composite inorganic layers in the at least one first composite inorganic layer and the first inorganic layer included in the other of the adjacent first composite inorganic layers in the at least one first composite inorganic layer are in contact with each other.

26. The display device according to claim 24, wherein, the second inorganic layers included in one of the adjacent first composite inorganic layers in the at least one first composite inorganic layer and the second inorganic layers included in the other of the adjacent first composite inorganic layers in the at least one first composite inorganic layer have equal refractive indices.

27. The display device according to claim 22, wherein, The first inorganic layer and the second inorganic layer include TiO 2 , SiN x , AlO x , Al 2 O 3 and SiO x and at least one of them.

28. The display device according to claim 22, wherein, One of the first inorganic layer and the second inorganic layer includes TiO 2 and the other of the first inorganic layer and the second inorganic layer includes Al 2 O 3 .

29. The display device according to claim 28, wherein, the at least one first composite inorganic layer includes at least five first composite inorganic layers.

30. The display device according to claim 29, wherein, the total thickness of the at least five first composite inorganic layers is greater than 0.5 micrometers and less than 1 micrometer.

31. The display device according to claim 22, further comprising: a first auxiliary inorganic layer, the first auxiliary inorganic layer being located between the at least one first composite inorganic layer and the organic layer.

32. The display device according to claim 31, wherein, the refractive index of the first auxiliary inorganic layer is equal to the refractive index of the first inorganic layer.

33. The display device according to claim 22, further comprising: at least one second composite inorganic layer, the at least one second composite inorganic layer being positioned opposite to the at least one first composite inorganic layer, wherein the organic layer is inserted between the at least one first composite inorganic layer and the at least one second composite inorganic layer.

34. The display device according to claim 33, wherein, the at least one second composite inorganic layer includes: a first inorganic layer, the first inorganic layer being located on the organic layer; and a second inorganic layer, the second inorganic layer being located on the first inorganic layer of the at least one second composite inorganic layer.

35. The display device according to claim 34, wherein, the first inorganic layer of the at least one second composite inorganic layer and the second inorganic layer of the at least one second composite inorganic layer have different refractive indices from each other.

36. The display device according to claim 35, wherein, the first inorganic layer of the at least one second composite inorganic layer and the first inorganic layer of the at least one first composite inorganic layer have equal refractive indices, and the second inorganic layer of the at least one second composite inorganic layer and the second inorganic layer of the at least one first composite inorganic layer have equal refractive indices.

37. The display device according to claim 34, wherein, the first inorganic layer of the at least one second composite inorganic layer and the second inorganic layer of the at least one second composite inorganic layer are in contact with each other.

38. The display device according to claim 34, wherein, the difference between the refractive index of the first inorganic layer included in the at least one second composite inorganic layer and the refractive index of the second inorganic layer included in the at least one second composite inorganic layer is equal to or greater than 0.

4.

39. The display device according to claim 34, further comprising: a second auxiliary inorganic layer, the second auxiliary inorganic layer being located between the at least one second composite inorganic layer and the organic layer.

40. The display device according to claim 39, wherein, the refractive index of the second auxiliary inorganic layer is equal to the refractive index of the second inorganic layer included in the at least one second composite inorganic layer.

41. The display device according to claim 22, wherein, the sealing unit includes at least one of the following: a lower inorganic layer, the lower inorganic layer being located between the organic layer and the at least one first composite inorganic layer; and An upper inorganic layer, the upper inorganic layer being located on the organic layer.

42. The display device according to claim 22, further comprising: A protective layer, the protective layer being located between the common electrode and the at least one first composite inorganic layer.

43. The display device according to claim 42, wherein, The protective layer comprises: A covering layer, the covering layer being located on the common electrode; and A metal layer, the metal layer being located on the covering layer.

44. The display device according to claim 43, wherein, The covering layer comprises an organic material, and the metal layer comprises LiF.

45. The display device according to claim 22, wherein, An interface between the first inorganic layer and the second inorganic layer has a first uneven pattern.

46. The display device according to claim 45, wherein, A surface of the second inorganic layer facing the interface has a second uneven pattern.

47. The display device according to claim 46, wherein, An arrangement direction of convex portions included in the first uneven pattern intersects an arrangement direction of convex portions included in the second uneven pattern.

48. The display device according to claim 22, wherein, A difference between a refractive index of the first inorganic layer and a refractive index of the second inorganic layer is equal to or greater than 0.4, such that the at least one first composite inorganic layer has a transmittance of 10% or less with respect to ultraviolet light.

49. A display device, comprising: A substrate; A switching element, the switching element being located on the substrate; A pixel electrode, the pixel electrode being disposed on the switching element and connected to the switching element; A light-emitting layer, the light-emitting layer being located on the pixel electrode; A common electrode, the common electrode being located on the light-emitting layer; and A sealing unit, the sealing unit being located on the common electrode, wherein the sealing unit comprises: An organic layer; and A first composite inorganic layer, the first composite inorganic layer being located between the common electrode and the organic layer, The first composite inorganic layer comprises: A plurality of first inorganic layers; and A plurality of second inorganic layers, wherein the plurality of first inorganic layers and the plurality of second inorganic layers are alternately arranged in a direction from the common electrode toward the organic layer, The first inorganic layer and the second inorganic layer have different refractive indices from each other, and the adjacent first inorganic layer and second inorganic layer are in contact with each other, and wherein the sealing unit comprises: A cover portion, disposed on the common electrode; and An extension portion, extending from the cover portion toward the substrate and inserted into the substrate.

50. A method of manufacturing a display device, the method comprising: Forming a switching element on a substrate; Forming a pixel electrode on the switching element, wherein the pixel electrode is connected to the switching element; Forming a light-emitting layer on the pixel electrode; Forming a common electrode on the light-emitting layer; and Forming a sealing unit on the common electrode, wherein the sealing unit comprises: An organic layer; and At least one first composite inorganic layer, the at least one first composite inorganic layer being located between the common electrode and the organic layer, The at least one first composite inorganic layer comprises: A first inorganic layer, the first inorganic layer being located between the common electrode and the organic layer; and A second inorganic layer, the second inorganic layer being located between the first inorganic layer and the organic layer, The first inorganic layer and the second inorganic layer have different refractive indices from each other and are in contact with each other, and Wherein, the sealing unit includes: A cover portion disposed on the common electrode; and An extension portion extending from the cover portion toward the substrate and inserted into the substrate.

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