Display device and method for manufacturing the same

Abstract

A display device and a manufacturing method thereof are provided. The display device includes: a base substrate; a thin film transistor layer located on the base substrate; an insulating layer located on the thin film transistor layer; a first electrode located on the insulating layer and in a light-emitting region; a pixel defining layer having an opening with substantially the same size and shape as the first electrode, and located on the insulating layer; a light-emitting layer located on the first electrode; and a second electrode located on the light-emitting layer.

Description

Technical Field

[0001] The embodiments relate to a display device and a method of manufacturing a display device. Background Art

[0002] Recently, display devices having a light weight and a small size have been manufactured. Cathode ray tube (CRT) display devices have been used due to their performance and competitive price. However, CRT display devices have weaknesses in terms of size or portability. Therefore, display devices such as plasma display devices, liquid crystal display devices, and organic light emitting display devices have been highly regarded due to their small size, light weight, and low power consumption. Summary of the Invention

[0003] The embodiments relate to a display device including: a base substrate; a thin film transistor layer disposed on the base substrate; an insulating layer disposed on the thin film transistor layer; a first electrode disposed on the insulating layer and in a light emitting region; a pixel defining layer having an opening with substantially the same size and shape as the first electrode and disposed on the insulating layer; a light emitting layer disposed on the first electrode; and a second electrode disposed on the light emitting layer.

[0004] The first electrode may be disposed in the opening of the pixel defining layer.

[0005] A side surface of the first electrode in a thickness direction may contact a side surface of the pixel defining layer.

[0006] In a wavelength range of 300 nm to 500 nm, a light reflectance of the first electrode may be higher than a light reflectance of the pixel defining layer and a light reflectance of the insulating layer.

[0007] In a wavelength range of 300 nm to 500 nm, a light transmittance of the insulating layer may be lower than a light transmittance of the pixel defining layer.

[0008] The pixel defining layer may have a first height, and the display device may further include a spacer having the same material as the pixel defining layer and having a second height greater than the first height.

[0009] The embodiments also relate to a method of manufacturing a display device, the method including the steps of: forming a thin film transistor layer on a base substrate; forming an insulating layer on the thin film transistor layer; forming a first electrode on the insulating layer; forming a photoresist layer on the insulating layer on which the first electrode is formed; exposing the photoresist layer; and forming a pixel defining layer having an opening by developing the exposed photoresist layer. The opening may have the same size and shape as the first electrode, and the first electrode may be disposed in the opening.

[0010] In the step of exposing the photoresist layer, the same light is irradiated to the photoresist layer in the light-emitting region and the non-emitting region adjacent to the light-emitting region.

[0011] In the step of exposing the photoresist layer, at a wavelength in the range of 300 nm to 500 nm, the light reflectivity of the first electrode can be higher than the light reflectivity of the photoresist layer and the light reflectivity of the insulating layer.

[0012] In the step of exposing the photoresist layer, in the wavelength range of 300 nm to 500 nm, the light transmittance of the insulating layer can be less than the light transmittance of the photoresist layer.

[0013] The step of exposing the photoresist layer can include: disposing a metal mesh mask on the photoresist layer, wherein the metal mesh mask can have a plurality of openings uniformly formed with respect to the light-emitting region and the non-emitting region adjacent to the light-emitting region; and exposing the photoresist layer by irradiating light through the metal mesh mask.

[0014] In the step of exposing the photoresist layer, at a wavelength in the range of 300 nm to 500 nm, the light reflectivity of the first electrode can be higher than the light reflectivity of the photoresist layer and the light reflectivity of the insulating layer.

[0015] In the step of exposing the photoresist layer, in the wavelength range of 300 nm to 500 nm, the light transmittance of the insulating layer can be lower than the light transmittance of the photoresist layer.

[0016] The portion of the metal mesh mask located in the non-emitting region can be sealed to block light to form a spacer.

[0017] The metal mesh mask can be located on the photoresist layer to be close to the upper surface of the photoresist layer.

[0018] The side surface of the first electrode in the thickness direction can contact the side surface of the pixel defining layer.

[0019] The photoresist layer can include a positive photoresist composition.

[0020] The insulating layer can include a colored polymer material.

[0021] The method can further include forming a light-emitting layer on the first electrode and forming a second electrode on the light-emitting layer after forming the pixel defining layer.

[0022] The embodiment also relates to a method of manufacturing a display device, the method comprising: forming a thin film transistor layer on a base substrate; forming an insulating layer on the thin film transistor layer; forming a first electrode on the insulating layer; forming a photoresist layer on the insulating layer on which the first electrode is formed; exposing the photoresist layer using light reflection on the first electrode; and forming a pixel defining layer having an opening by developing the exposed photoresist layer, wherein the opening has the same size and shape as the first electrode, and the first electrode is located in the opening. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Features will become apparent to those skilled in the art by referring to the accompanying drawings and describing the exemplary embodiments in detail, wherein:

[0024] Figure 1 A cross-sectional view of a display device according to an exemplary embodiment is shown;

[0025] Figures 2A to 2E A cross-sectional view of each stage in a method of manufacturing Figure 1 the display device is shown;

[0026] Figures 3A to 3E A cross-sectional view of each stage in another method of manufacturing Figure 1 the display device is shown;

[0027] Figure 4 A cross-sectional view of a display device according to an exemplary embodiment is shown;

[0028] Figures 5A to 5C A cross-sectional view of each stage in a method of manufacturing Figure 4 the display device is shown;

[0029] Figure 6 A block diagram of an electronic device according to an exemplary embodiment is shown;

[0030] Figure 7A A diagram showing an example in which Figure 6 the electronic device is implemented as a television; and

[0031] Figure 7B A diagram showing an example in which Figure 6 the electronic device is implemented as a smartphone. DETAILED DESCRIPTION

[0032] Hereinafter, example embodiments will be described more fully with reference to the accompanying drawings; however, the example embodiments may be presented in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the example implementations to those skilled in the art. In the drawings, the dimensions of layers and regions may be exaggerated for clarity of illustration. Like reference numerals always denote like elements.

[0033] Figure 1 is a cross-sectional view showing a display device according to an example embodiment.

[0034] Referring to Figure 1 , the display device may include a base substrate 100, a thin film transistor layer TFTL, an insulating layer 110, a pixel defining layer PDL, a light emitting structure 120, and a sealing member 130.

[0035] The base substrate 100 may include a transparent insulating substrate. For example, the base substrate 100 may be a flexible transparent resin substrate. The transparent resin substrate may include polyimide resins, acrylate resins, polyacrylate resins, polycarbonate resins, polyether resins, sulfonic acid resins, polyethylene terephthalate resins, etc. For example, the base substrate 100 may be a polyimide (PI) resin film.

[0036] The thin film transistor layer TFTL may be located on the base substrate 100. The thin film transistor layer TFTL may include an active layer, a plurality of wiring layers, a plurality of insulating layers, and thin film transistors electrically connected to the first electrode 121. Accordingly, the circuits for driving the pixels of the display device may be located in the thin film transistor layer TFTL. The thin film transistor layer TFTL may have various structures. The metal wirings constituting the thin film transistor layer TFTL may be formed of a low-reflection metal, that is, may be formed of a metal having a low reflectivity.

[0037] The insulating layer 110 may be located on the thin film transistor layer TFTL. The insulating layer 110 may include an organic insulating material and may have a substantially flat top surface while sufficiently covering the structure of the thin film transistor layer TFTL. For example, the insulating layer 110 may include organic materials such as polyimide, epoxy resin, acrylic resin, and polyester.

[0038] The insulating layer 110 may include a colored polymer material. In an exemplary embodiment, the insulating layer 110 may include a non-photosensitive polymer material in which a coloring material is dispersed or incorporated. For example, the non-photosensitive polymer material may include a backbone structure of novolac, polystyrene, polyhydroxystyrene (PHS), polyacrylate, polymethacrylate, polyvinyl ester, polyvinyl ether, polyolefin, polynorbornene, polyester, polyamide, polycarbonate, etc. Functional groups (e.g., protecting groups or leaving groups) that are active in an exposure process may not be included in the backbone structure.

[0039] The coloring material included in the insulating layer 110 may include a black material such as carbon black or a light-absorbing dye material. In an exemplary embodiment, the dye material may have an absorbance for light having a wavelength in the range of about 300 nm to about 500 nm.

[0040] The light-emitting structure 120 may include a first electrode 121, a light-emitting layer 122, and a second electrode 123.

[0041] The first electrode 121 may be located on the insulating layer 110. The first electrode 121 may be a reflective electrode including a reflective material. For example, the first electrode 121 may be formed using aluminum, an aluminum-containing alloy, aluminum nitride, silver, a silver-containing alloy, tungsten, tungsten nitride, copper, a copper-containing alloy, nickel, a nickel-containing alloy, chromium, chromium nitride, molybdenum, a molybdenum-containing alloy, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, etc. These may be used alone or in combination thereof. In an exemplary embodiment, the first electrode 121 may have a single-layer structure or a multilayer structure, and the multilayer structure may include a metal film, an alloy film, a metal nitride film, a conductive metal oxide film, and / or a transparent conductive film. For example, the first electrode 121 may have an ITO / Ag / ITO structure. In the wavelength range of 300 nm to 500 nm, the light reflectance of the first electrode 121 may be higher than the light reflectance of the pixel defining layer PDL and the light reflectance of the insulating layer 110.

[0042] The pixel defining layer PDL may be located on the insulating layer 110 on which the first electrode 121 is disposed. The pixel defining layer PDL may be formed using an organic material. For example, the pixel defining layer PDL may include a photoresist, an acrylate resin, a polyimide resin, a polyamide resin, a silicone resin, etc. The pixel defining layer PDL may include a positive photoresist composition.

[0043] A positive photoresist composition generally refers to a photoresist in which portions other than the exposed portions remain as a pattern after exposure. The positive photoresist composition is exposed to light, and the exposed portions are chemically decomposed and washed away after development.

[0044] The pixel defining layer PDL may form an opening for exposing the first electrode 121. The opening may have the same size and shape as the first electrode 121. Accordingly, the first electrode 121 may be located in the opening of the pixel defining layer PDL, and side surfaces of the first electrode 121 in the thickness direction may contact side surfaces of the pixel defining layer PDL.

[0045] The light emitting area EA and the non-emitting area NEA of the display device may be defined by the opening of the pixel defining layer PDL. For example, a portion where the opening of the pixel defining layer PDL is located may correspond to the light emitting area EA, and the non-emitting area NEA may correspond to a portion of the pixel defining layer PDL adjacent to the opening. The size and shape of the opening may match the size and shape of the first electrode 121. Accordingly, the light emitting area EA may be substantially consistent with the first electrode 121.

[0046] In addition, in a wavelength range of 300 nm to 500 nm, the light transmittance of the insulating layer 110 may be lower than the light transmittance of the pixel defining layer PDL. In this regard, patterning of the pixel defining layer PDL may be performed by a maskless process, an aperture mask process, or a metal mesh mask process, which will be described in detail below with reference to Figure 2C the process.

[0047] The light emitting layer 122 may be located on the first electrode 121 exposed through the opening of the pixel defining layer PDL. In addition, the light emitting layer 122 may extend on sidewalls of the opening of the pixel defining layer PDL. In some exemplary embodiments, the light emitting layer 122 may include an organic light emitting layer (EL), a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), an electron injection layer (EIL), etc. In some exemplary embodiments, except for the organic emission layer, the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be commonly formed to correspond to a plurality of pixels. In some exemplary embodiments, a plurality of organic light emitting layers may be formed using a light emitting material, wherein the light emitting material generates different colors of light such as red light, green light, and blue light according to color pixels of the display device. In some exemplary embodiments, the organic light emitting layer of the light emitting layer 122 may include a plurality of stacked light emitting materials for generating red light, green light, and blue light, thereby emitting white light. Elements of the light emitting layer 122 may be commonly formed to correspond to a plurality of pixels, and each pixel may be divided by a color filter layer.

[0048] The second electrode 123 may be located on the pixel defining layer PDL and the light emitting layer 122. The second electrode 123 may include a transmissive material or a reflective material depending on the emission type of the display device. For example, the second electrode 123 may be formed using aluminum, an aluminum-containing alloy, aluminum nitride, silver, a silver-containing alloy, tungsten, tungsten nitride, copper, a copper-containing alloy, nickel, a nickel-containing alloy, chromium, chromium nitride, molybdenum, a molybdenum-containing alloy, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, etc. These may be used alone or in combination. In an exemplary embodiment, the second electrode 123 may also have a single-layer structure or a multi-layer structure, and the multi-layer structure may include a metal film, an alloy film, a metal nitride film, a conductive metal oxide film, and / or a transparent conductive film.

[0049] The sealing member 130 may be located on the second electrode 123. The sealing member 130 may prevent moisture and oxygen from penetrating from the outside. The sealing member 130 may be a thin film encapsulation layer or a sealing substrate. The thin film encapsulation layer may include at least one inorganic layer and at least one organic layer. The at least one inorganic layer and the at least one organic layer may be stacked sequentially. For example, the thin film encapsulation layer may include two inorganic layers and one organic layer located between the two inorganic layers.

[0050] According to this exemplary embodiment, the first electrode of the light emitting structure is not covered by the pixel defining layer or not stacked with the pixel defining layer. Therefore, the light emitting area can be increased compared to a structure in which the edge of the first electrode is covered by the pixel defining layer.

[0051] Figures 2A to 2E is a cross-sectional view showing a method of manufacturing Figure 1 the display device.

[0052] Referring to Figure 2A , a thin film transistor layer TFTL may be formed on the base substrate 100. An insulating layer 110 may be formed on the thin film transistor layer TFTL. In an exemplary embodiment, the insulating layer 110 may be formed using an organic polymer material by a spin coating process and may have a substantially flat top surface.

[0053] In the wavelength range of 300 nm to 500 nm, the light transmittance of the insulating layer 110 may be less than that of the pixel defining layer PDL, which will be explained below. In an exemplary embodiment, the insulating layer 110 may include a colored polymer material. The coloring material included in the insulating layer 110 may include a black material such as carbon black or a light absorbing dyeing material. In an exemplary embodiment, the dyeing material may have an absorbance for light in the wavelength range of about 300 nm to about 500 nm.

[0054] The first electrode 121 may be formed on the insulating layer 110. In an exemplary embodiment, the first electrode 121 may be obtained by forming a metal layer on the insulating layer 110 and then patterning the metal layer using a photolithography process or an etching process using an additional etching mask.

[0055] Referring to Figure 2B , a photoresist layer PR may be formed on the insulating layer 110. The photoresist layer PR may include a positive photoresist composition.

[0056] In an exemplary embodiment, the photoresist layer PR may be formed by spin-coating a composition containing a photoresist polymer on the insulating layer 110.

[0057] Referring to Figure 2C , the photoresist layer PR may be exposed by irradiating light (indicated by the upper arrow in Figure 2C ). In an exemplary embodiment, the light may be light having a peak wavelength in the range of 300 nm to 500 nm.

[0058] The portion of the photoresist layer PR that overlaps with the first electrode 121 may have a greater exposure amount than other portions that do not overlap with the first electrode 121. In the present exemplary embodiment, the first electrode 121 is a reflective electrode and reflects light. Therefore, after the light emitted from the exposure device passes through the portion of the photoresist layer PR located on the first electrode 121, as a result of reflection, the light is provided to the portion of the photoresist layer PR again. Therefore, the portion of the photoresist layer PR that overlaps with the first electrode 121 may have a greater exposure amount than other portions of the photoresist layer PR that do not overlap with the first electrode 121.

[0059] In the wavelength range of 300 nm to 500 nm, the light transmittance of the insulating layer 110 may be less than the light transmittance of the photoresist layer PR. Therefore, the structure of the thin film transistor layer TFTL located below the insulating layer 110 or the reflection of the insulating layer 110 can be minimized.

[0060] Referring to Figure 2D , through a developing process, the exposed portion of the photoresist layer PR may be removed to form a pixel defining layer PDL. At this time, since the portion of the photoresist layer PR that overlaps with the first electrode 121 has a relatively large exposure amount, the portion of the photoresist layer PR that overlaps with the first electrode 121 may be removed through the developing process to form a pixel defining layer PDL having an opening with the same size and shape as the first electrode 121, and the first electrode 121 is located in the opening.

[0061] Referring to Figure 2E, a light-emitting layer 122 and a second electrode 123 may be formed on the first electrode 121, and then a sealing member 130 may be formed to manufacture a display device. The light-emitting layer 122, the second electrode 123, and the sealing member 130 may be formed by various methods.

[0062] Figures 3A to 3E is a cross-sectional view showing another method of manufacturing Figure 1 the display device shown. Except for using a metal mesh mask MM in the exposure process, this method is substantially the same as Figures 2A to 2E the method shown. Accordingly, repeated explanations will be omitted.

[0063] Referring to Figure 3A and Figure 3B , a thin film transistor layer TFTL may be formed on a base substrate 100. An insulating layer 110 may be formed on the thin film transistor layer TFTL. A photoresist layer PR may be formed on the insulating layer 110.

[0064] Referring to Figure 3C , a metal mesh mask MM may be disposed on the photoresist layer PR. The metal mesh mask MM may be a metal mask in which a plurality of openings are formed uniformly with respect to a light-emitting region (refer to EA in Figure 3E ) and a non-emitting region adjacent to the light-emitting region (refer to NEA in Figure 3E ). The lower surface of the metal mesh mask MM facing the photoresist layer PR may have a property of reflecting light.

[0065] The metal mesh mask MM may be disposed close to the upper surface of the photoresist layer PR. In an exemplary embodiment, the metal mesh mask MM may be arranged to be spaced apart from the photoresist layer PR.

[0066] The photoresist layer PR may be exposed by irradiating light through the metal mesh mask MM, as indicated by the downward arrow in the upper row of Figure 3C .

[0067] A portion of the photoresist layer PR that overlaps with the first electrode 121 may have a greater exposure amount than other portions of the photoresist layer PR that do not overlap with the first electrode 121. According to the present exemplary embodiment, the first electrode 121 is a reflective electrode and reflects light. Accordingly, after the light emitted from the exposure device passes through the portion of the photoresist layer PR located on the first electrode 121, the reflected light is supplied to the portion of the photoresist layer PR again. In addition, the light is reflected again on the lower surface of the metal mesh mask MM located on the photoresist layer PR and is incident on the portion of the photoresist layer PR again. Accordingly, the exposure amount of the portion of the photoresist layer PR may be further increased.

[0068] Referring to Figure 3D, through a developing process, the exposed portion of the photoresist layer PR can be removed to form a pixel defining layer PDL. The portion of the photoresist layer PR that overlaps with the first electrode 121 can have a relatively large exposure amount. Thus, the said portion of the photoresist layer PR can be removed through the developing process. Accordingly, the pixel defining layer PDL can be formed with an opening having the same size and shape as the first electrode 121, and the first electrode 121 can be positioned within the opening.

[0069] Referring to Figure 3E , an emission layer 122 and a second electrode 123 can be formed on the first electrode 121, and then a sealing member 130 can be formed to fabricate a display device. The emission layer 122, the second electrode 123, and the sealing member 130 can be formed by various known methods.

[0070] Figure 4 is a cross-sectional view showing a display device according to an exemplary embodiment.

[0071] Referring to Figure 4 , except that a portion of the pixel defining layer PDL is formed as a spacer SPC, the display device can be substantially the same as the Figure 1 display device. Accordingly, repeated explanations will be omitted.

[0072] The display device can include a base substrate 100, a thin film transistor layer TFTL, an insulating layer 110, a pixel defining layer PDL, an emission structure 120, and a sealing member 130.

[0073] The pixel defining layer PDL can have a first height h1. A portion of the pixel defining layer PDL can be a spacer SPC having a second height h2 that is higher than the first height h1.

[0074] Figures 5A to 5C is a cross-sectional view showing a method of manufacturing a Figure 4 display device.

[0075] Referring to Figure 5A , a thin film transistor layer TFTL can be formed on the base substrate 100. An insulating layer 110 can be formed on the thin film transistor layer TFTL. A photoresist layer PR can be formed on the insulating layer 110.

[0076] Next, a metal mesh mask MM can be disposed on the photoresist layer PR. The metal mesh mask MM can be a metal mask in which a plurality of openings are formed uniformly with respect to the emission region (refer to Figure 3E EA in Figure 3E ) and the non-emission region adjacent to the emission region (refer to Figure 5Babove the region formed by the spacer SPC in ) to block light. The lower surface of the metal mesh mask MM facing the photoresist layer PR may have the property of reflecting light.

[0077] The photoresist layer PR can be exposed by irradiating light through the metal mesh mask MM, as Figure 5A shown by the downward arrow in the upper row in.

[0078] The portion of the photoresist layer PR that overlaps with the first electrode 121 may have a greater exposure amount than other portions of the photoresist layer PR that do not overlap with the first electrode 121. In addition, the exposure amount of the portion of the photoresist layer PR where the spacer is to be formed may be lower than the exposure amount of the portion of the photoresist layer PR where the pixel defining layer is to be formed at the first height (refer to Figure 5B the PDL in ).

[0079] Refer to Figure 5B , through the developing process, the exposed portion of the photoresist layer PR can be removed to form the pixel defining layer PDL. The portion of the photoresist layer PR that overlaps with the first electrode 121 may have a relatively large exposure amount so that the said portion of the photoresist layer PR can be removed through the developing process. In addition, the portion corresponding to the closed portion of the metal mesh mask MM may have a smaller exposure amount so that a spacer SPC with a second height h2 greater than the first height h1 is formed.

[0080] Refer to Figure 5C , the light emitting layer 122 and the second electrode 123 can be formed on the first electrode 121, and then the sealing member 130 can be formed to manufacture the display device. The light emitting layer 122, the second electrode 123, and the sealing member 130 can be formed by various methods.

[0081] As described above, according to the embodiment, the reflection from the first electrode can be used to perform the patterning of the opening for forming the pixel defining layer in a self-aligned manner. Therefore, an additional mask for patterning the pixel defining layer is unnecessary, and the critical dimension (CD) dispersion of the pixel defining layer can be reduced.

[0082] Generally, the CD dispersion of the process for forming the first electrode is better than that of the process for patterning the pixel defining layer through the photolithography process. According to the embodiment, compared with the process of forming the pixel defining layer by exposure and development using an additional mask, the display quality can be improved by reducing the deviation of the opening of the pixel defining layer for each pixel.

[0083] In addition, since there is no overlapping portion between the first electrode and the pixel defining layer, the ratio of the light emitting area to the non-emitting area can be maximized, which can improve the display quality.

[0084] Figure 6 is a block diagram showing an electronic device according to an exemplary embodiment. Figure 7A is a diagram showing an example in which Figure 6 the electronic device is implemented as a television. Figure 7B is a diagram showing an example in which Figure 6 the electronic device is implemented as a smartphone.

[0085] Referring to Figures 6 to 7B , the electronic device 500 may include a processor 510, a memory device 520, a storage device 530, an input / output (I / O) device 540, a power supply 550, and a display device 560. The display device 560 may correspond to Figure 1 the display device of. Additionally, the electronic device 500 may further include a plurality of ports for communicating with a graphics card, a sound card, a memory card, a universal serial bus (USB) device, other electronic devices, etc. In an exemplary embodiment, as Figure 7A shown in, the electronic device 500 may be implemented as a television. In another exemplary embodiment, as Figure 7B shown in, the electronic device 500 may be implemented as a smartphone. In another exemplary embodiment, the display device 500 may be implemented as a cellular phone, a video phone, a smart tablet, a smart watch, a tablet PC, a car navigation system, a computer monitor, a notebook computer, a head-mounted display (HMD), etc.

[0086] The processor 510 can perform various computing functions. The processor 510 can be a microprocessor, a central processing unit (CPU), an application processor (AP), etc. The processor 510 can be coupled to other components via an address bus, a control bus, a data bus, etc. In addition, the processor 510 can be coupled to an expansion bus such as a peripheral component interconnect (PCI) bus. The memory device 520 can store data for the operation of the electronic device 500. For example, the memory device 520 can include at least one non-volatile memory device such as an erasable programmable read-only memory (EPROM) device, an electrically erasable programmable read-only memory (EEPROM) device, a flash memory device, a phase change random access memory (PRAM) device, a resistive random access memory (RRAM) device, a nano floating gate memory (NFGM) device, a polymer random access memory (PoRAM) device, a magnetic random access memory (MRAM) device, a ferroelectric random access memory (FRAM) device, etc., and / or at least one volatile memory device such as a dynamic random access memory (DRAM) device, a static random access memory (SRAM) device, a mobile DRAM device, etc. The storage device 530 can include a solid state drive (SSD) device, a hard disk drive (HDD) device, a CD-ROM device, etc. The I / O device 540 can include input devices such as a keyboard, a keypad, a mouse device, a touchpad, a touch screen, etc. and output devices such as a printer, a speaker, etc. The power supply 550 can provide power for the operation of the electronic device 500.

[0087] The display device 560 can be coupled to other components via a bus or other communication link. In some example embodiments, the display device 560 can be included in the I / O device 540. As described above, the display device 560 can reduce the deviation of the opening of the pixel defining layer for each pixel, which can improve the display quality. In an example embodiment, there is no vertical stacked portion of the pixel defining layer on the first electrode. Therefore, the ratio of the light emitting region to the non-emitting region can be maximized, which can improve the display quality.

[0088] The embodiments can be applied to an organic light emitting display device and various electronic devices including the organic light emitting display device. For example, the embodiments can be applied to a mobile phone, a smart phone, a video phone, a smart tablet, a smart watch, a tablet PC, a car navigation system, a television, a computer monitor, a notebook, etc.

[0089] By way of summary and review, an organic light-emitting display device can be manufactured by a method including forming a photoresist layer on a substrate and exposing and patterning the photoresist layer using a mask. If the pattern thus formed deviates according to the mask and position of each pixel, the display quality will deteriorate. Generally, the CD discreteness of the process for forming the first electrode can be better than that of the process for patterning the pixel defining layer by a photolithography process.

[0090] As described above, the first electrode can be used to perform patterning of the opening for forming the pixel defining layer in a self-aligned manner. An additional mask for patterning the pixel defining layer may not be used, and the critical dimension (CD) discreteness of the pixel defining layer can be reduced. According to an embodiment, compared with the process of forming the pixel defining layer by exposure and development using an additional mask, the display quality can be improved by reducing the deviation of the opening of the pixel defining layer for each pixel. Additionally, according to an embodiment, there is no overlapping portion between the first electrode and the pixel defining layer. Therefore, the ratio of the light-emitting region to the non-emitting region can be maximized, which can improve the display quality.

[0091] As described above, an embodiment relates to a display device and a method of manufacturing the display device that can provide improved display quality. One or more exemplary embodiments can provide a display device in which the display quality is improved and the manufacturing process is simplified. The embodiment also provides a method of manufacturing the display device.

[0092] Exemplary embodiments have been disclosed herein. Although specific terms are used, they are used and interpreted in a general and descriptive sense only and not for the purpose of limitation. In some cases, since the filing of the present application, as will be apparent to those of ordinary skill in the art, unless otherwise specifically stated, the features, characteristics, and / or elements described in connection with a particular embodiment can be used alone or in combination with the features, characteristics, and / or elements described in connection with other embodiments. Thus, those skilled in the art will understand that various changes can be made in form and detail without departing from the spirit and scope of the present invention as set forth in the claims.

Claims

1. A method of manufacturing a display device, the method comprising the following steps: Forming a thin film transistor layer on a base substrate; Forming an insulating layer on the thin film transistor layer; Forming a first electrode including a reflective material on the insulating layer; Forming a photoresist layer on the insulating layer on which the first electrode is formed; Exposing the photoresist layer, wherein the same light is irradiated onto the photoresist layer such that a portion of the photoresist layer overlapping with the first electrode has a greater exposure amount than other portions of the photoresist layer not overlapping with the first electrode; and Forming a pixel defining layer having an opening by developing the exposed photoresist layer, wherein the opening has the same size and shape as the first electrode, and the first electrode is located in the opening.

2. The method according to claim 1, wherein, In the step of exposing the photoresist layer, the same light is irradiated onto the photoresist layer in a light emitting region and a non-emitting region adjacent to the light emitting region.

3. The method according to claim 1, wherein In the step of exposing the photoresist layer, at a wavelength in the range of 300 nm to 500 nm, the light reflectance of the first electrode is higher than the light reflectance of the photoresist layer and the light reflectance of the insulating layer.

4. The method according to claim 1, wherein In the step of exposing the photoresist layer, in the wavelength range of 300 nm to 500 nm, the light transmittance of the insulating layer is less than the light transmittance of the photoresist layer.

5. The method according to claim 1, wherein, The step of exposing the photoresist layer includes: Providing a metal mesh mask on the photoresist layer, wherein the metal mesh mask has a plurality of openings uniformly formed with respect to a light emitting region and a non-emitting region adjacent to the light emitting region; and Exposing the photoresist layer by irradiating light through the metal mesh mask.

6. The method according to claim 5, wherein In the step of exposing the photoresist layer, at a wavelength in the range of 300 nm to 500 nm, the light reflectance of the first electrode is higher than the light reflectance of the photoresist layer and the light reflectance of the insulating layer.

7. The method according to claim 5, wherein, In the step of exposing the photoresist layer, in the wavelength range of 300 nm to 500 nm, the light transmittance of the insulating layer is less than the light transmittance of the photoresist layer.

8. The method according to claim 5, wherein Closing a portion of the metal mesh mask located in the non-emitting region to block light to form a spacer.

9. The method according to claim 1, wherein, A side surface of the first electrode in the thickness direction is in contact with a side surface of the pixel defining layer, The photoresist layer includes a positive photoresist composition, and The insulating layer includes a colored polymer material.

10. The method according to claim 1, the method further comprising: Forming a light emitting layer on the first electrode after forming the pixel defining layer; And Forming a second electrode on the light emitting layer.

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