A static test device for insulated gate bipolar transistor

Abstract

The present invention provides a static test device for an insulated gate bipolar transistor. First, a pressure ring unit is provided, which includes a pressure ring station and a pressure ring mechanism. The circumference of the pressure ring unit is provided with a first channel, a second channel and a third channel. The first channel is connected to a film shell conveying mechanism, and the second channel is connected to a circular ring conveying mechanism. The film shell enters the pressure ring station under the drive of the film shell conveying mechanism, and the circular ring enters the pressure ring station under the drive of the circular ring conveying mechanism. The circular ring is pressed tightly in the film shell under the action of the pressure ring mechanism. The circular ring and the film shell together constitute the insulated gate bipolar transistor body. The feed inlet of the transfer unit is connected to the third channel. A plurality of test stations are provided on the transfer unit, and a material lowering mechanism is provided on one side. A loading tray is provided on one side of the discharge port of the transfer unit, and the loading tray is located in the high-voltage test mechanism. Compared with the prior art, the present invention improves the static test efficiency of the insulated gate bipolar transistor.

Description

Technical Field

[0001] The invention relates to a static test of an insulated gate bipolar transistor, and in particular to a static test device of the insulated gate bipolar transistor. Background Art

[0002] The insulated gate bipolar transistor is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor. It has the advantages of both the high input impedance of MOSFET and the low on-state voltage drop of GTR. GTR has a low saturation voltage drop and a large current density, but a large driving current; MOSFET has a very small driving power and a fast switching speed, but a large on-state voltage drop and a low current density. The insulated gate bipolar transistor combines the advantages of the above two devices, with low driving power and low saturation voltage drop. It is very suitable for use in converter systems with a DC voltage of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives and other fields.

[0003] After the insulated gate bipolar transistor is produced, a series of static tests are required to ensure that its various performances meet the standards. Due to the large number of test types, the testing efficiency of the staff is low. Therefore, an auxiliary testing device suitable for insulated gate bipolar transistors is needed to improve the testing efficiency. Summary of the invention

[0004] In view of this, the present invention provides a static test device for an insulated gate bipolar transistor, which improves the static test efficiency of the insulated gate bipolar transistor compared with the prior art.

[0005] To this end, the present invention provides a static testing device for an insulated gate bipolar transistor. First, a pressing ring unit is provided, which includes a pressing ring station and a pressing ring mechanism. A first channel, a second channel and a third channel are provided on the circumference of the pressing ring unit. The first channel is connected to a film shell conveying mechanism, and the second channel is connected to a circular ring conveying mechanism. The film shell enters the pressing ring station under the drive of the film shell conveying mechanism, and the circular ring enters the pressing ring station under the drive of the circular ring conveying mechanism. The circular ring is pressed tightly in the film shell under the action of the pressing ring mechanism. The circular ring and the film shell together constitute an insulated gate bipolar transistor body. The feeding port of the transfer unit is connected to the third channel. An electrical test station, a CCD test station and a high-voltage test station are provided on the transfer unit, and a material lowering mechanism is provided on one side of the electrical test station, the CCD test station and the high-voltage test station. A loading tray is provided on one side of the discharge port of the transfer unit, and the loading tray is located in the high-voltage test mechanism.

[0006] Furthermore, the pressing ring mechanism includes a first mounting frame, a pressing ring cylinder, a positioning cylinder and a positioning plate, the pressing ring cylinder is installed on the top of the first mounting frame, the positioning cylinder is installed on the bottom of the first mounting frame, and the positioning plate is fixedly installed in the first mounting frame and is located between the pressing ring cylinder and the positioning cylinder.

[0007] Furthermore, a ring-removing rod extending toward the IGBT body is installed at the bottom of the ring-pressing cylinder, and the position of the positioning cylinder corresponds to the position of the ring-removing rod.

[0008] Furthermore, the membrane shell conveying mechanism includes a membrane shell feed tray, a discharge port, a push plate and a push rod. A plurality of membrane shells are arranged in a matrix in the membrane shell feed tray. The push plate is located at one end in the length direction of the membrane shell feed tray, and the push rod and the discharge port are located at the other end in the length direction of the membrane shell feed tray. The push plate is pressed against the membrane shell under the push of the first cylinder and drives the membrane shell to move along the length direction of the membrane shell feed tray. The push rod pushes the membrane shell toward the discharge port under the drive of the second cylinder.

[0009] Furthermore, the circular conveying mechanism is a feeding vibration plate.

[0010] Furthermore, the material lowering mechanism includes a second mounting frame, a third cylinder, a guide rail and a manipulator, the guide rail is installed on the second mounting frame, the third cylinder is installed on the guide rail, the manipulator is installed on the third cylinder, and the manipulator grabs the insulated gate bipolar transistor body and moves along the length direction of the guide rail under the drive of the third cylinder.

[0011] Furthermore, a material dropping box is provided on one side of the material dropping mechanism, and the insulated gate bipolar transistor body falls into the material dropping box under the drive of the manipulator.

[0012] Furthermore, the high-voltage testing mechanism includes a third mounting frame, a fastening plate, a test electrode, a fourth cylinder and a fifth cylinder. The loading tray is fixedly mounted on the bottom of the third mounting frame. The fastening plate compacts a plurality of insulated gate bipolar transistor bodies in the loading tray under the drive of the fourth cylinder. The fifth cylinder is mounted on the top of the third mounting frame. The test electrode moves toward or away from the loading tray under the drive of the fifth cylinder.

[0013] The static testing device of an insulated gate bipolar transistor provided by the present invention mainly comprises a pressure ring unit, a film shell conveying mechanism, a circular ring conveying mechanism, a transfer unit, a material lowering mechanism and a high-voltage testing mechanism. The film shell and the circular ring are respectively conveyed to the pressure ring unit by the film shell conveying mechanism and the circular ring conveying mechanism, and assembled into an insulated gate bipolar transistor body in the pressure ring unit. Then the insulated gate bipolar transistor body moves on the transfer unit. An electrical test station, a CCD test station and a high-voltage test station are sequentially arranged on the transfer unit. The insulated gate bipolar transistor body passes through these three stations in sequence and completes the test. The insulated gate bipolar transistor body with unqualified test results is rejected by the material lowering mechanism on one side of the station. The insulated gate bipolar transistor body with qualified test results is placed in a loading tray, and then a second high-voltage test is completed in the high-voltage testing mechanism to improve quality and safety.

[0014] Therefore, compared with the prior art, the present invention improves the static test efficiency of the insulated gate bipolar transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0016] Figure 1 A schematic structural diagram of a static test device for an insulated gate bipolar transistor provided by an embodiment of the present invention;

[0017] Figure 2 A schematic structural diagram of a static test device for an insulated gate bipolar transistor provided by an embodiment of the present invention;

[0018] Figure 3 A schematic structural diagram of a static test device for an insulated gate bipolar transistor provided by an embodiment of the present invention;

[0019] Figure 4 A schematic structural diagram of a static test device for an insulated gate bipolar transistor provided by an embodiment of the present invention;

[0020] Figure 5 A schematic structural diagram of a static test device for an insulated gate bipolar transistor provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0021] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0022] Embodiment 1:

[0023] See also Figures 1 to 5The present embodiment provides a static test device for an insulated gate bipolar transistor. First, a pressing ring unit 1 is provided, which includes a pressing ring station 11 and a pressing ring mechanism 12. The circumference of the pressing ring unit 1 is provided with a first channel, a second channel and a third channel. The first channel is connected to a film shell conveying mechanism 2, and the second channel is connected to a circular ring conveying mechanism 3. The film shell enters the pressing ring station 11 under the drive of the film shell conveying mechanism 2, and the circular ring enters the pressing ring station 11 under the drive of the circular ring conveying mechanism 3. The circular ring is moved by the pressing ring mechanism 12. It is pressed down tightly into the membrane shell, and the ring and the membrane shell together constitute the insulated gate bipolar transistor body 4. The feed port 51 of the transfer unit 5 is connected to the third channel. The transfer unit 5 is provided with an electrical test station 52, a CCD test station 53 and a high-voltage test station 54, and one side of the electrical test station 52, the CCD test station 53 and the high-voltage test station 54 is provided with a material lowering mechanism 6, and a loading tray 55 is provided on one side of the discharge port 56 of the transfer unit 5, and the loading tray 55 is located in the high-voltage testing mechanism 7.

[0024] Continue to see Figures 1 to 5 The ring pressing mechanism 12 includes a first mounting frame 121, a ring pressing cylinder 122, a positioning cylinder 123 and a positioning plate 124. The ring pressing cylinder 122 is mounted on the top of the first mounting frame 121, and the positioning cylinder 123 is mounted on the bottom of the first mounting frame 121. The positioning plate 124 is fixedly mounted in the first mounting frame 121 and is located between the ring pressing cylinder 122 and the positioning cylinder 123. A ring taking rod 125 extending toward the insulated gate bipolar transistor body 4 is installed at the bottom of the ring pressing cylinder 122. The position of the positioning cylinder 123 corresponds to the position of the ring taking rod 125. The membrane shell conveying mechanism 2 includes a membrane shell feeding tray 21, a discharge port 22, a push plate 23 and a push rod 24. A plurality of membrane shells are arranged in a matrix in the membrane shell feeding tray 21. The push plate 23 is located at one end of the membrane shell feeding tray 21 in the length direction. The push rod 24 and the discharge port 22 are located at the other end of the membrane shell feeding tray 21 in the length direction. The push plate 23 is pressed against the membrane shell under the push of the first cylinder 231 and drives the membrane shell to move along the length direction of the membrane shell feeding tray 21. The push rod 24 is driven by the second cylinder 241 to push the membrane shell toward the discharge port 22. The circular conveying mechanism 3 is a feeding vibration tray.

[0025] Continue to see Figures 1 to 5The material lowering mechanism 6 comprises a second mounting frame 61, a third cylinder 62, a guide rail 63 and a manipulator 64. The guide rail 63 is mounted on the second mounting frame 61, the third cylinder 62 is mounted on the guide rail 63, the manipulator 64 is mounted on the third cylinder 62, and the manipulator 64 grabs the insulated gate bipolar transistor body 4 under the drive of the third cylinder 62 and moves along the length direction of the guide rail 63. A material lowering box 65 is provided on one side of the material lowering mechanism 6. The insulated gate bipolar transistor body 4 is moved along the length direction of the guide rail 63 by the manipulator 64. The high-voltage testing mechanism 7 comprises a third mounting frame 71, a fastening plate 72, a test electrode 73, a fourth cylinder 74 and a fifth cylinder 75. The loading tray 55 is fixedly mounted on the bottom of the third mounting frame 71. The fastening plate 72 compacts the multiple insulated gate bipolar transistor bodies 4 in the loading tray 55 under the drive of the fourth cylinder 74. The fifth cylinder 75 is mounted on the top of the third mounting frame 71. The test electrode 73 moves toward or away from the loading tray 55 under the drive of the fifth cylinder 75.

[0026] The static testing device of an insulated gate bipolar transistor provided by the present invention mainly comprises a pressure ring unit, a film shell conveying mechanism, a circular ring conveying mechanism, a transfer unit, a material lowering mechanism and a high-voltage testing mechanism. The film shell and the circular ring are respectively conveyed to the pressure ring unit by the film shell conveying mechanism and the circular ring conveying mechanism, and assembled into an insulated gate bipolar transistor body in the pressure ring unit. Then the insulated gate bipolar transistor body moves on the transfer unit. An electrical test station, a CCD test station and a high-voltage test station are sequentially arranged on the transfer unit. The insulated gate bipolar transistor body passes through these three stations in sequence and completes the test. The insulated gate bipolar transistor body with unqualified test results is rejected by the material lowering mechanism on one side of the station. The insulated gate bipolar transistor body with qualified test results is placed in a loading tray, and then a second high-voltage test is completed in the high-voltage testing mechanism to improve quality and safety.

[0027] Process flow: automatic tray loading - pressure ring - conventional electrical test - bad discharge - graphic test (CCD detection) - bad discharge - track insulation test - bad discharge - material collection - high voltage (insulation) test.

[0028] Regarding the pressing ring mechanism, it includes a first mounting frame, a pressing ring cylinder, a positioning cylinder and a positioning plate. The pressing ring cylinder is installed on the top of the first mounting frame, the positioning cylinder is installed on the bottom of the first mounting frame, the positioning plate is fixedly installed in the first mounting frame and is located between the pressing ring cylinder and the positioning cylinder. The insulated gate bipolar transistor body is fixed to the positioning plate by the positioning cylinder and then tightened by the pressing ring cylinder.

[0029] Regarding the membrane shell conveying mechanism, it includes a membrane shell feeding tray, a discharge port, a push plate and a push rod. A plurality of membrane shells are arranged in a matrix in the membrane shell feeding tray. The push plate is located at one end in the length direction of the membrane shell feeding tray, and the push rod and the discharge port are located at the other end in the length direction of the membrane shell feeding tray. The push plate is pressed against the membrane shell under the push of the first cylinder and drives the membrane shell to move along the length direction of the membrane shell feeding tray. The push rod pushes the membrane shell toward the discharge port under the drive of the second cylinder. The specific operating sequence is: the membrane shell is placed in the feeding tray, the push plate pushes the membrane shell to one side of the discharge port, and then it is pushed out from the discharge port by the push rod.

[0030] The membrane shell feeding tray is made of smooth stainless steel to prevent scratches on the bottom of the product; the ring conveying mechanism uses a belt conveyor line driven by a variable frequency motor to feed the device, and the cylinder pushes the material into the test track at the end of the conveyor belt; the pressure of the pressure ring in the pressure ring mechanism is adjustable and the pressure value can be displayed.

[0031] The test process between chips in the electrical test organization can be achieved by setting the module control terminal. The system is equipped with a historical record of the number of good and defective products of the machine and the working status of the workstation for easy traceability. Finally, the test results are fed back to the test organization through the test station to determine the quality of the tested device. The graphic test part uses a graphic instrument with CCD detection, selects the graphic of the standard device as the standard, and compares the graphic of the component to be tested with the standard for measurement.

[0032] The rail insulation test is to measure the insulation degree between the terminal and the base plate. The insulation test adopts the guide rail cylinder + probe + test piece mechanism to ensure good contact. It can be freely selected whether to enable it according to the process requirements. There is a defective product collection device behind the test station, which can accommodate up to 12 defective products. When the material is full, an alarm is triggered and the tester takes them away manually.

[0033] Material receiving and high-voltage (insulation) testing mechanism: Modules that have passed the first two tests will be sent to the loading tray. When the loading tray is full, it will be manually moved to the high-voltage testing station. The high-voltage test will not affect the operation of the equipment. This test can test at least 36 modules at a time. The high-voltage testing station can perform module testing independently. The high-voltage test mode can select the AC withstand voltage test between the terminal and the bottom plate or the AC withstand voltage test between the electrodes. The two test modes can be easily switched electrically.

[0034] Therefore, compared with the prior art, the present invention improves the static test efficiency of the insulated gate bipolar transistor.

[0035] Embodiment 2:

[0036] See also Figures 1 to 5, the figure shows a static test device for an insulated gate bipolar transistor provided by embodiment 2 of the present invention. On the basis of the above embodiments, this embodiment further makes the following improved technical solutions: an electrical test station 52, a CCD test station 53 and a high-voltage test station 54 are arranged on the transfer unit 5, and a material lowering mechanism 6 is arranged on one side of the electrical test station 52, the CCD test station 53 and the high-voltage test station 54. The transfer unit 5 includes a linear track, a material transfer track, a transfer fixture, a transfer lifting cylinder, a transfer slide, a horizontal transfer cylinder and a transfer fixture. The linear track is installed on the workbench, and the transfer slide is slidably installed on the linear track under the drive of the horizontal transfer cylinder. The material transfer track is connected to the linear track through the transfer lifting cylinder and is lifted and lowered under the drive of the transfer lifting cylinder. The transfer fixture is fixedly installed on the material transfer track and moves with the material transfer track. The feeding track of this transfer unit 5 is more flexible and can be applied to more types of production activities.

[0037] Embodiment three:

[0038] See also Figures 1 to 5 , the figure shows a static test device for an insulated gate bipolar transistor provided by embodiment 3 of the present invention. This embodiment further makes the following improved technical solutions on the basis of the above embodiments: the high-voltage test mechanism 7 includes a third mounting frame 71, a fastening plate 72, a test electrode 73, a fourth cylinder 74 and a fifth cylinder 75. The loading tray 55 is fixedly mounted on the bottom of the third mounting frame 71. The fastening plate 72 compacts the multiple insulated gate bipolar transistor bodies 4 in the loading tray 55 under the drive of the fourth cylinder 74. The fifth cylinder 75 is mounted on the top of the third mounting frame 71. The test electrode 73 moves toward or away from the loading tray 55 under the drive of the fifth cylinder 75. A plurality of slots are provided in the loading tray 55 for positioning the insulated gate bipolar transistor bodies 4, which facilitates the alignment of the test electrode 73 and improves the test accuracy.

[0039] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A static test device for an insulated gate bipolar transistor, characterized in that: include: A pressing ring unit (1), comprising a pressing ring station (11) and a pressing ring mechanism (12); a first channel, a second channel and a third channel are arranged around the pressing ring unit (1); the first channel is connected to a film shell conveying mechanism (2); the second channel is connected to a circular ring conveying mechanism (3); the film shell enters the pressing ring station (11) under the drive of the film shell conveying mechanism (2); the circular ring enters the pressing ring station (11) under the drive of the circular ring conveying mechanism (3); the circular ring is pressed tightly into the film shell under the action of the pressing ring mechanism (12); the circular ring and the film shell together constitute an insulated gate bipolar transistor body (4); A transfer unit (5), wherein the material inlet (51) is connected to the third channel, the transfer unit (5) is provided with an electrical test station (52), a CCD test station (53) and a high-voltage test station (54), and a material lowering mechanism (6) is provided on one side of each of the electrical test station (52), the CCD test station (53) and the high-voltage test station (54), and a loading tray (55) is provided on one side of the outlet of the transfer unit (5), and the loading tray (55) is located in the high-voltage test mechanism (7); The ring pressing mechanism (12) comprises a first mounting frame (121), a ring pressing cylinder (122), a positioning cylinder (123) and a positioning plate (124); the ring pressing cylinder (122) is mounted on the top of the first mounting frame (121); the positioning cylinder (123) is mounted on the bottom of the first mounting frame (121); the positioning plate (124) is fixedly mounted in the first mounting frame (121) and is located between the ring pressing cylinder (122) and the positioning cylinder (123); a ring removing rod (125) extending toward the insulated gate bipolar transistor body (4) is mounted at the bottom of the ring pressing cylinder (122); the position of the positioning cylinder (123) corresponds to the position of the ring removing rod (125).

2. The static test device of an insulated gate bipolar transistor according to claim 1, characterized in that: The membrane shell conveying mechanism (2) comprises a membrane shell feeding tray (21), a discharge port (22), a push plate (23) and a push rod (24); a plurality of membrane shells are arranged in a matrix in the membrane shell feeding tray (21); the push plate (23) is located at one end of the membrane shell feeding tray (21) in the length direction; the push rod (24) and the discharge port (22) are located at the other end of the membrane shell feeding tray (21) in the length direction; the push plate (23) is pressed against the membrane shell under the push of a first cylinder (231) and drives the membrane shell to move along the length direction of the membrane shell feeding tray (21); the push rod (24) is driven by a second cylinder (241) to push the membrane shell toward the discharge port (22).

3. The static test device of an insulated gate bipolar transistor according to claim 2, characterized in that: The circular conveying mechanism (3) is a feeding vibration plate.

4. The static test device of an insulated gate bipolar transistor according to claim 1, characterized in that: The material lowering mechanism (6) comprises a second mounting frame (61), a third cylinder (62), a guide rail (63) and a manipulator (64); the guide rail (63) is mounted on the second mounting frame (61); the third cylinder (62) is mounted on the guide rail (63); the manipulator (64) is mounted on the third cylinder (62); and the manipulator (64) grasps the insulated gate bipolar transistor body (4) and moves along the length direction of the guide rail (63) under the drive of the third cylinder (62).

5. The static test device of an insulated gate bipolar transistor according to claim 4, characterized in that: A material dropping box (65) is provided on one side of the material dropping mechanism (6), and the insulated gate bipolar transistor body (4) falls into the material dropping box (65) driven by the manipulator (64).

6. The static test device of an insulated gate bipolar transistor according to claim 1, characterized in that: The high-voltage testing mechanism (7) comprises a third mounting frame (71), a fastening plate (72), a test electrode (73), a fourth cylinder (74) and a fifth cylinder (75); the loading tray (55) is fixedly mounted on the bottom of the third mounting frame (71); the fastening plate (72) compacts the plurality of insulated gate bipolar transistor bodies (4) in the loading tray (55) under the drive of the fourth cylinder (74); the fifth cylinder (75) is mounted on the top of the third mounting frame (71); and the test electrode (73) moves toward or away from the loading tray (55) under the drive of the fifth cylinder (75).

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