Display device

Abstract

Provided is a display device, which includes: a substrate including a first pixel region and a second pixel region adjacent to the first pixel region; a circuit device layer located on the substrate; a first light-emitting device module located on the circuit device layer, the first light-emitting device module including a first light-emitting device that is stacked with the first pixel region to display a first color; and a second light-emitting device module located on the first light-emitting device module, the second light-emitting device module having a first pixel through-hole that is stacked with the first pixel region, and the second light-emitting device module further including a second light-emitting device that is stacked with the second pixel region to display a second color different from the first color.

Description

[0001] This application claims the priority and benefit of Korean Patent Application No. 10-2019-0006956, filed with the Korean Intellectual Property Office on January 18, 2019, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to a display device and a method of manufacturing the same, and more particularly, to a high-resolution display device and a method of manufacturing the high-resolution display device. Background Art

[0003] Among display devices, organic light-emitting display devices are emerging as next-generation display devices because of various technical characteristics such as a large viewing angle, good contrast characteristics, and a fast response speed.

[0004] Generally, an organic light-emitting display device includes thin-film transistors and organic light-emitting devices on a substrate. Each of the organic light-emitting devices serving as a self-luminous device includes a pixel electrode, a counter electrode opposite to the pixel electrode, and a light-emitting layer between the pixel electrode and the counter electrode. The organic light-emitting display device is used as a display unit for small-sized products such as mobile phones or a display unit for large-sized products such as televisions.

[0005] In the case of a full-color display organic light-emitting display device, pixel regions emit light of different colors, and a deposition mask is used to form the light-emitting layer and the counter electrode in each pixel, and both the light-emitting layer and the counter electrode are provided as a single object in a plurality of pixels. As the resolution of the organic light-emitting display device increases, the width of the opening slit of the mask for the deposition process decreases, and it is desirable to reduce the dispersion of the slit. In order to manufacture a high-resolution organic light-emitting display device, it is desirable to reduce or eliminate the shadow effect.

[0006] However, it is becoming increasingly difficult to implement a high-resolution organic light-emitting display device through a deposition process using a mask. Summary of the Invention

[0007] Embodiments of the present disclosure provide a high-resolution organic light-emitting display device.

[0008] According to some embodiments of the present disclosure, a display device includes: a substrate including a first pixel region and a second pixel region adjacent to the first pixel region; a circuit device layer located on the substrate; a first light-emitting device module located on the circuit device layer, the first light-emitting device module including a first light-emitting device stacked with the first pixel region to display a first color; and a second light-emitting device module located on the first light-emitting device module, the second light-emitting device module having a first pixel through-hole stacked with the first pixel region, and the second light-emitting device module further including a second light-emitting device stacked with the second pixel region to display a second color different from the first color.

[0009] In some embodiments, the first light-emitting device includes a first pixel electrode, a first pair of electrodes opposite to the first pixel electrode, and a first light-emitting layer located between the first pixel electrode and the first pair of electrodes. The first light-emitting device module further includes a first non-emitting layer not stacked with the first pixel region, and wherein the first non-emitting layer and the first light-emitting layer form a single object.

[0010] In some embodiments, the first non-emitting layer includes a first material different from a second material of the first light-emitting layer. In some embodiments, the first material included in the first non-emitting layer and the second material included in the first light-emitting layer have different molecular structures from each other. In some embodiments, when viewed in a plan view, the first non-emitting layer surrounds the first light-emitting layer. In some embodiments, the first light-emitting device further includes a first protective layer located on the first pair of electrodes and including an insulating material.

[0011] In some embodiments, the second pixel through-hole stacked with the second pixel region is located in the first light-emitting device module. In some embodiments, the first light-emitting device module further includes a first substrate located below the first light-emitting device to support the first light-emitting device, wherein the second pixel through-hole penetrates the first substrate. In some embodiments, the first non-emitting layer is stacked with the second pixel region. In some embodiments, the circuit device layer includes a transistor connected to the first light-emitting device module, and the first pixel electrode is connected to the transistor through a pixel contact hole located outside the first pixel region and penetrating the first light-emitting device module and the second light-emitting device module.

[0012] In some embodiments, the circuit device layer includes a power supply voltage pattern configured to receive a reference voltage, wherein the first pair of electrodes is connected to the power supply voltage pattern through an opposite contact hole located outside the first pixel region and penetrating the first light-emitting device module and the second light-emitting device module. In some embodiments, the second light-emitting device module further includes a second substrate located below the second light-emitting device to support the second light-emitting device, wherein the first pixel through-hole penetrates the second substrate.

[0013] In some embodiments, a display device includes: a substrate including a first pixel region and an edge region adjacent to the first pixel region; a circuit device layer disposed on the substrate; and a first light-emitting device module disposed on the circuit device layer. The first light-emitting device module includes a first light-emitting device that is stacked with the first pixel region to display a first color, and the first light-emitting device module further includes a first non-emitting layer that is stacked with the edge region. Wherein, the first light-emitting device includes a first pixel electrode, a first pair of electrodes opposite to the first pixel electrode, and a first light-emitting layer disposed between the first pixel electrode and the first pair of electrodes, and wherein the first non-emitting layer and the first light-emitting layer form a single object.

[0014] In some embodiments, the first non-emitting layer includes a first material different from a second material of the first light-emitting layer. In some embodiments, the first material included in the first non-emitting layer and the second material included in the first light-emitting layer have different molecular structures from each other. In some embodiments, the substrate further includes a second pixel region spaced apart from the first pixel region, and the display device further includes a second light-emitting device module disposed on the first light-emitting device module. The second light-emitting device module includes a second light-emitting device that is stacked with the second pixel region and is configured to display a second color different from the first color, and the second light-emitting device module has a first pixel through-hole that is stacked with the first pixel region.

[0015] In some embodiments, a method of manufacturing a display device includes the steps of: placing a substrate including a first pixel region and a second pixel region adjacent to the first pixel region on a support substrate; forming a through-hole in the substrate that is stacked with the second pixel region; forming a first pixel electrode on the substrate; depositing a light-emitting pattern on the first pixel electrode; irradiating a first light onto a portion of the light-emitting pattern to form a first light-emitting layer and a first non-emitting layer, the portion of the light-emitting pattern not being stacked with the first pixel region, the first light-emitting layer being stacked with the first pixel region, and the first non-emitting layer not being stacked with the first pixel region; forming a first pair of electrodes on the first light-emitting layer and the first non-emitting layer; and separating the support substrate from the substrate.

[0016] In some embodiments, the first light has a wavelength of 300 nm or shorter. In some embodiments, the molecular structure of the second material in the first light-emitting layer is different from the molecular structure of the first material in the first non-emitting layer. In some embodiments, the step of forming a through-hole in the substrate includes irradiating the substrate with a laser beam, using a dry etching process, or using a Bosch process. Description of the Drawings

[0017] Example embodiments will be understood more clearly through the following brief description in conjunction with the drawings. The drawings illustrate non-limiting example embodiments as described herein.

[0018] Figure 1is a plan view schematically showing a display device according to an embodiment of the present disclosure.

[0019] Figure 2 is an equivalent circuit diagram of one of the pixels constituting a display device according to an embodiment of the present disclosure.

[0020] Figure 3 is along Figure 1 a cross-sectional view taken along line I-I'.

[0021] Figures 4A to 4C are plan views respectively showing a first light-emitting device module to a third light-emitting device module.

[0022] Figure 5 is an enlarged cross-sectional view showing a first light-emitting device located on a first substrate of Figure 3 according to another embodiment of the present disclosure.

[0023] Figure 6 is along Figure 1 a cross-sectional view taken along line II-II'.

[0024] Figure 7 is along Figure 1 a cross-sectional view taken along line III-III'.

[0025] Figure 8 is along Figure 1 a cross-sectional view taken along line I-I' showing a display device according to another embodiment of the present disclosure.

[0026] Figure 9 is a plan view schematically showing a display device according to another embodiment of the present disclosure.

[0027] Figure 10 is a plan view showing an image information device according to an embodiment of the present disclosure.

[0028] Figures 11A to 11H is along Figure 1 a cross-sectional view taken along line I-I' and showing the process of manufacturing the first light-emitting device module of the display device shown in Figure 1

[0029] ​It should be noted that these drawings are intended to illustrate the general characteristics of the methods, structures, and / or materials used in certain example embodiments and are intended to supplement the written description provided below. However, these drawings are not drawn to scale and may not accurately reflect the exact structure or performance characteristics of any given embodiment and should not be construed as limiting or restricting the scope of the values or characteristics included by the example embodiments. For example, for clarity, the relative thicknesses and positions of molecules, layers, regions, and / or structural elements may be reduced or exaggerated. The use of like or identical reference numerals in the various drawings is intended to indicate the presence of like or identical elements or features. Detailed Description

[0030] Example embodiments of the present disclosure will now be described more fully with reference to the drawings in which example embodiments are shown. However, the example embodiments of the present disclosure may be implemented in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the example embodiments to those of ordinary skill in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like reference numerals in the drawings denote like elements and thus their description will be omitted.

[0031] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, the element can be directly connected or coupled to the other element, or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, no intervening elements are present. The same reference numerals always denote the same elements. As used herein, the term "and / or" includes any combination and all combinations of one or more of the associated listed items. Other words used to describe the relationship between elements or layers (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," "on" versus "directly on") should be interpreted in the same manner.

[0032] It will be understood that although the terms "first," "second," etc. may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Thus, a first element, component, region, layer, or portion discussed below may be termed a second element, component, region, layer, or portion without departing from the teachings of the example embodiments.

[0033] For ease of description, spatial relative terms such as "under", "below", "lower", "above", "upper", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to another (other) element or feature. It will be understood that the spatial relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. For example, if the device in the drawings is flipped, an element described as "under" or "below" another element or feature will then be positioned "above" the other element or feature. Thus, the exemplary term "under" can encompass both an upper and a lower orientation. The device may be otherwise positioned (rotated 90 degrees or at other orientations) and the spatial relative descriptors used herein interpreted accordingly.

[0034] The terms used herein are for the purpose of describing particular embodiments only and are not intended to be limiting of example embodiments. As used herein, unless the context clearly dictates otherwise, the singular forms "a", "an", and "the" are also intended to include the plural forms. It will also be understood that the terms "comprises", "comprising", and / or their variants, if used herein, specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0035] Exemplary embodiments of the present disclosure are described herein with reference to cross-sectional views of schematic illustrations of idealized embodiments (and intermediate structures) as example embodiments. As such, variations in the shapes of the illustrations due to, for example, manufacturing techniques and / or tolerances are to be expected. Accordingly, the exemplary embodiments of the present disclosure should not be construed as being limited to the particular shapes of regions shown herein, but will include deviations in shapes, for example, resulting from manufacturing.

[0036] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments of the present disclosure belong. It will also be understood that terms, such as those defined in a general dictionary, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0037] Figure 1 is a plan view schematically showing a display device according to an embodiment of the present disclosure.

[0038] As Figure 1 shown, the display device 1000 may include a display area DA for displaying an image and a peripheral area PA located outside the display area DA.

[0039] In an embodiment, when viewed in a plan view, the display device 1000 is shown to have a rectangular shape. The extending direction of the long side of the display device 1000 may be defined as a first direction DR1, and the extending direction of the short side of the display device 1000 may be defined as a second direction DR2. The thickness direction of the display device 1000 may be defined as a third direction DR3.

[0040] Pixels for emitting lights of different colors may be located in the display area DA. Figure 1 The first pixel PX1, the second pixel PX2, and the third pixel PX3 are shown. The first pixel PX1, the second pixel PX2, and the third pixel PX3 may display different colors. For example, the first pixel PX1, the second pixel PX2, and the third pixel PX3 may emit red light, green light, and blue light, respectively. Although Figure 1 an example in which the first pixel PX1, the second pixel PX2, and the third pixel PX3 are sequentially arranged along the second direction DR2 is shown, the present disclosure is not limited to this example, and the arrangement of the pixels may be variously changed.

[0041] In Figure 1 , the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be located in the display area DA, and may be repeatedly arranged along the first direction DR1 and the second direction DR2. Relative contact holes CB1, CB2, and CB3 and pixel contact holes CK1, CK2, and CK3 are also arranged in the display area DA.

[0042] A driver, a power supply voltage supply line, etc. for supplying an electrical signal or power to the pixels may be located in the peripheral area PA which is a non-display area. In an embodiment, the peripheral area PA may further include pads (or "bonding pads"), which are areas electrically connected to electronic devices, printed circuit boards, etc.

[0043] Figure 2 is an equivalent circuit diagram of one of the pixels constituting the display device according to an embodiment of the present disclosure.

[0044] Referring to Figure 2 , the pixel may include a pixel circuit PC and a display element connected to the pixel circuit PC. In Figure 2 , an organic light-emitting diode OLED is shown as an example of the display element. The pixel circuit PC may include a first thin film transistor T1, a second thin film transistor T2, and a storage capacitor Cst.

[0045] The second thin film transistor T2 used as a switching transistor may be connected to the scan line SL and the data line DL, and may transfer the data voltage input from the data line DL to the first thin film transistor T1 according to the switching voltage input from the scan line SL. The storage capacitor Cst may be connected between the second thin film transistor T2 and the driving voltage line PL, and may store a voltage corresponding to the difference between the voltage transferred from the second thin film transistor T2 and the first power supply voltage ELVDD supplied to the driving voltage line PL.

[0046] The first thin film transistor T1 used as a driving transistor may be connected to the driving voltage line PL and the storage capacitor Cst, and may control the driving current Id flowing from the driving voltage line PL to the organic light emitting diode OLED according to the level of the voltage stored in the storage capacitor Cst. The organic light emitting diode OLED may emit light, and the luminance of the light is determined by the driving current Id. The counter electrode (e.g., cathode) of the organic light emitting diode OLED may be supplied with the second power supply voltage ELVSS.

[0047] Figure 2 An example of a pixel circuit PC including two thin film transistors and one storage capacitor is shown, but the present disclosure is not limited to this example. According to the design structure of the pixel circuit PC, the number of thin film transistors and storage capacitors may be variously changed.

[0048] Figure 3 is a cross-sectional view taken along Figure 1 line I-I' of Figures 4A to 4C is a plan view showing the first light emitting device module to the third light emitting device module, respectively.

[0049] The display device 1000 may include a substrate layer SUB, a circuit device layer CL, a first light emitting device module 100, a second light emitting device module 200, and a third light emitting device module 300.

[0050] In an embodiment, the display area DA of the display device 1000 may include a first pixel area PA1, a second pixel area PA2, a third pixel area PA3, and a plurality of edge areas MA. In an embodiment, the first pixel PX1 may include a part of the first light emitting device module 100 overlapping with the first pixel area PA1 and some elements of the circuit device layer CL overlapping with the first pixel area PA1. Similarly, the second pixel PX2 may include a part of the second light emitting device module 200 overlapping with the second pixel area PA2 and some elements of the circuit device layer CL overlapping with the second pixel area PA2, and the third pixel PX3 may include a part of the third light emitting device module 300 overlapping with the third pixel area PA3 and some elements of the circuit device layer CL overlapping with the third pixel area PA3.

[0051] The substrate layer SUB may include at least one of polymer resins such as polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate (PAR), polyimide (PI), polycarbonate (PC), or cellulose acetate propionate (CAP).

[0052] The circuit device layer CL may be located on the substrate layer SUB. The circuit device layer CL may include circuit devices and at least one insulating layer. The circuit devices may include signal lines, pixel driving circuits, etc. The signal lines may include the scanning line SL, data line DL, and driving voltage line PL described with reference to Figure 2 The pixel driving circuit may include the first thin film transistor T1, second thin film transistor T2, and storage capacitor Cst described with reference to Figure 2 The first light emitting device module 100 may be located on the circuit device layer CL.

[0053] With reference to Figure 3 and Figure 4A , the first light emitting device module 100 may be located on the circuit device layer CL.

[0054] The first light emitting device module 100 may include a first substrate 101, a first light emitting device OD1, and a first non-emitting layer 111.

[0055] The first substrate 101 may include silicon, glass, or plastic. The first through hole OP1 corresponding to the second pixel region PA2 and the second through hole OP2 corresponding to the third pixel region PA3 may be located in the first substrate 101. The first through hole OP1 and the second through hole OP2 may be formed by using a laser beam, an etching process, a Bosch process (e.g., pulse multiplexed etching or time multiplexed etching), etc.

[0056] The first light emitting device OD1 may be located on the first substrate 101. The first light emitting device OD1 may display a first color. The first light emitting device OD1 may be located in the first pixel region PA1.

[0057] The first light emitting device OD1 may include a first pixel electrode 103, a first light emitting layer 105, a first counter electrode 107, and a first protective layer 109.

[0058] The first pixel electrode 103 may be located on the first substrate 101. Although not shown, at least one insulating layer may also be located between the first substrate 101 and the first pixel electrode 103.

[0059] The first pixel electrode 103 may be formed of at least one of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), and mixtures thereof, or may include at least one of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), and mixtures thereof.

[0060] In an embodiment, the first pixel electrode 103 may include a transparent conductive oxide (TCO) layer. The TCO layer may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), or aluminum zinc oxide (AZO), or may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). In an embodiment, the first pixel electrode 103 may be a three-layer structure including an ITO / Ag / ITO layer.

[0061] The first light-emitting layer 105 may include a first organic light-emitting layer. The first organic light-emitting layer may be located between the first pixel electrode 103 and the first counter electrode 107, and may emit light having one of red, green, blue, white, and other colors.

[0062] The first counter electrode 107 may be formed of a conductive material having a low work function or may include a conductive material having a low work function. For example, the first counter electrode 107 may include at least one of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), and alloys thereof. In an embodiment, the first counter electrode 107 may include at least one of aluminum (Al), silver (Ag), and magnesium-silver alloy (Mg:Ag). In an embodiment, the first counter electrode 107 may include an alloy in which the content of silver (Ag) is higher than the content of magnesium (Mg).

[0063] The first protective layer 109 may be located on the first counter electrode 107. The first protective layer 109 may be used to protect the first counter electrode 107. The first protective layer 109 may include an insulating material.

[0064] The first light-emitting layer 105 of the first light-emitting device OD1 may be located in the first pixel region PA1, but not in the edge region MA. The first pair of electrodes 107 and the first protective layer 109 may be located not only in the first pixel region PA1 but also in the (one or more) edge regions MA, but the present disclosure is not limited to this example.

[0065] The first non-light-emitting layer 111 may be located on the same layer as the first light-emitting layer 105 or at the same level as the first light-emitting layer 105. The first non-light-emitting layer 111 may be located in the edge region MA. The first non-light-emitting layer 111 and the first light-emitting layer 105 may form a single object (e.g., may be formed as a single integrated body). When viewed in a plan view, the first non-light-emitting layer 111 may surround (e.g., encircle) the first light-emitting layer 105.

[0066] The first non-light-emitting layer 111 may include a material different from that of the first light-emitting layer 105.

[0067] The atomic components of the chemical materials constituting the first non-light-emitting layer 111 and the first light-emitting layer 105 may be substantially the same, but their molecular structures may be different from each other. In other words, the materials constituting the first non-light-emitting layer 111 and the first light-emitting layer 105 may include substantially the same atoms, but may be different in the bonding structure of the atoms. There may be a difference in the molecular structure between the material constituting the first non-light-emitting layer 111 and the material constituting the first light-emitting layer 105. As described below, the molecular structure of the first non-light-emitting layer 111 is damaged by short-wavelength light.

[0068] Light will not be emitted from the first non-light-emitting layer 111. Due to the width of the first non-light-emitting layer 111 (e.g., the width of the edge region MA), even when external moisture or contaminants penetrate into the first non-light-emitting layer 111 connected to the first light-emitting layer 105, the penetrated moisture or contaminants will not reach the first light-emitting layer 105. The first non-light-emitting layer 111 may be used as a layer that basically encapsulates the first light-emitting device OD1. The first non-light-emitting layer 111 may define the first pixel region PA1.

[0069] Refer to Figure 3 and Figure 4B As shown in, the second light-emitting device module 200 may be located on the first light-emitting device module 100. Although not shown, the second light-emitting device module 200 may be adhered to the first light-emitting device module 100 by an adhesive material.

[0070] The second light-emitting device module 200 may include a second substrate 201, a second light-emitting device OD2, and a second non-light-emitting layer 211.

[0071] The second substrate 201 may include silicon, glass, or plastic. The third through-hole OP3 corresponding to the first pixel region PA1 and the fourth through-hole OP4 corresponding to the third pixel region PA3 may be located in the second substrate 201. The third through-hole OP3 and the fourth through-hole OP4 may be formed by using a laser beam, an etching process, a Bosch process, or the like.

[0072] The second light-emitting device OD2 may be located on the second substrate 201. The second light-emitting device OD2 may display a second color different from the first color. The second light-emitting device OD2 may be located in the second pixel region PA2.

[0073] Except for the difference in the materials of the light-emitting layers, the second light-emitting device OD2 may have substantially the same structure as the first light-emitting device OD1, and some detailed descriptions of the second light-emitting device OD2 may be omitted.

[0074] The second light-emitting device OD2 may include a second pixel electrode 203, a second light-emitting layer 205, a second counter electrode 207, and a second protective layer 209. The second light-emitting layer 205 may include a material that emits light having a color different from the color of the light emitted from the first light-emitting layer 105.

[0075] The second non-emitting layer 211 may be located on the same layer as the second light-emitting layer 205 or at the same level as the second light-emitting layer 205. The second non-emitting layer 211 and the second light-emitting layer 205 may form a single object (e.g., may be formed as a single integrated body). The second non-emitting layer 211 may include a material different from the material of the second light-emitting layer 205. There may be a difference in the molecular structure between the material constituting the second non-emitting layer 211 and the material constituting the second light-emitting layer 205. The second non-emitting layer 211 may define the second pixel region PA2.

[0076] Refer to Figure 3 and Figure 4C , the third light-emitting device module 300 may be located on the second light-emitting device module 200. Although not shown, the third light-emitting device module 300 may be adhered to the second light-emitting device module 200 by an adhesive material.

[0077] The third light-emitting device module 300 may include a third substrate 301, a third light-emitting device OD3, and a third non-emitting layer 311.

[0078] The third substrate 301 may include silicon, glass, or plastic. The fifth through-hole OP5 corresponding to the first pixel region PA1 and the sixth through-hole OP6 corresponding to the second pixel region PA2 may be provided in the third substrate 301. The fifth through-hole OP5 and the sixth through-hole OP6 may be formed by using a laser beam, an etching process, a Bosch process, or the like.

[0079] The third light-emitting device OD3 may be located on the third substrate 301. The third light-emitting device OD3 may display a third color different from the first color and the second color. The third light-emitting device OD3 may be located in the third pixel region PA3.

[0080] Except for the difference in the materials of the light-emitting layers, the third light-emitting device OD3 may have substantially the same structure as the first light-emitting device OD1, and some detailed descriptions of the third light-emitting device OD3 may be omitted.

[0081] The third light-emitting device OD3 may include a third pixel electrode 303, a third light-emitting layer 305, a third counter electrode 307, and a third protective layer 309. The third light-emitting layer 305 may include a material that emits light having a color different from the colors of the light emitted from the first light-emitting layer 105 and the second light-emitting layer 205.

[0082] The third non-emitting layer 311 may be located on the same layer as the third light-emitting layer 305 or at the same level as the third light-emitting layer 305. The third non-emitting layer 311 and the third light-emitting layer 305 may form a single object (e.g., may be formed as a single integrated body). The third non-emitting layer 311 may include a material different from that of the third light-emitting layer 305. The molecular structure of the material constituting the third non-emitting layer 311 may be different from the molecular structure of the material constituting the third light-emitting layer 305. The third non-emitting layer 311 may define the third pixel region PA3.

[0083] In the display device according to the comparative example, the area of the pixel region may be determined by a pixel defining layer located between adjacent pixel regions in the form of an organic material.

[0084] In the display device 1000 according to an embodiment of the present disclosure, since the first non-emitting layer 111, the second non-emitting layer 211, and the third non-emitting layer 311 serve as the pixel defining layer in the display device of the comparative example, an additional process of forming the pixel defining layer may be omitted, and the entire manufacturing process may be simplified.

[0085] In addition, in the display device of the comparative example, when the first to third light-emitting devices are on the same layer, due to process limitations in the deposition process / patterning process, an edge region is formed to have a sufficiently large width, which makes it challenging or difficult to manufacture a high-resolution display device.

[0086] In an embodiment, since the first light-emitting device module 100, the second light-emitting device module 200, and the third light-emitting device module 300 are located on different layers or at different levels, it is possible to reduce the planar width of the edge region MA between the first light-emitting device OD1, the second light-emitting device OD2, and the third light-emitting device OD3 to a value much smaller than the corresponding planar width of the display device of the comparative example. In principle, the edge region MA may have a width of 1 μm or less. Therefore, the display device 1000 according to an embodiment of the present disclosure may have a higher resolution than the display device according to the comparative example.

[0087] Figure 5 is an enlarged cross-sectional view of a first light-emitting device located on a first substrate according to another embodiment of the present disclosure. Figure 3 of the first substrate.

[0088] Referring to Figure 5 , the first light-emitting layer 105-1 of the first light-emitting device OD1-1 may include a first organic light-emitting layer 113, a first hole control layer 115, and a first electron control layer 117.

[0089] The first hole control layer 115 may be located between the first pixel electrode 103 and the first organic light-emitting layer 113. The first electron control layer 117 may be located between the first pair of electrodes 107 and the first organic light-emitting layer 113.

[0090] The first hole control layer 115 may be used to transfer holes from the first pixel electrode 103 to the first organic light-emitting layer 113, and the first electron control layer 117 may be used to transfer electrons from the first pair of electrodes 107 to the first organic light-emitting layer 113.

[0091] The first non-emitting layer 111-1 may include a first organic non-emitting layer 123, a first hole non-control layer 125, and a first electron non-control layer 127.

[0092] The first organic non-emitting layer 123 may be located on the same layer as the first organic light-emitting layer 113 or at the same level as the first organic light-emitting layer 113. The first organic non-emitting layer 123 and the first organic light-emitting layer 113 may form a single object (e.g., may be formed as a single integrated body).

[0093] The first organic non-emitting layer 123 may include a material different from that of the first organic light-emitting layer 113. The material constituting the first organic non-emitting layer 123 and the material constituting the first organic light-emitting layer 113 may have different molecular structures from each other.

[0094] The first hole non-control layer 125 may be on the same layer as the first hole control layer 115 or at the same level as the first hole control layer 115. The first hole non-control layer 125 and the first hole control layer 115 may form a single object (e.g., may be formed as a single integrated body).

[0095] The first hole non-control layer 125 may include a material different from that of the first hole control layer 115. The material constituting the first hole non-control layer 125 and the material constituting the first hole control layer 115 may have different molecular structures from each other.

[0096] The first electron non-control layer 127 may be on the same layer as the first electron control layer 117 or at the same level as the first electron control layer 117. The first electron non-control layer 127 and the first electron control layer 117 may form a single object (e.g., may be formed as a single integrated body).

[0097] The first electron non-control layer 127 may include a material different from that of the first electron control layer 117. The material constituting the first electron non-control layer 127 and the material constituting the first electron control layer 117 may have different molecular structures from each other.

[0098] The first protective layer 109-1 of the first light-emitting device OD1-1 can not only cover the top surface and the side surface of the first pair of electrodes 107, but also cover the side surface of the first non-emitting layer 111-1. Due to the first protective layer 109-1, it is possible to prevent external moisture or contaminants from entering the first non-emitting layer 111-1, thereby protecting the first light-emitting device OD1-1 more stably.

[0099] Although Figure 5 the first light-emitting device OD1-1 is exemplarily shown, Figure 3 the second light-emitting device OD2 and the third light-emitting device OD3 Figure 5 may also have a structure similar to that of the first light-emitting device OD1-1 of

[0100] Figure 6 is a cross-sectional view taken along Figure 1 the line II-II' of

[0101] Reference will be made to Figure 6 describe the connection structure between the first pixel electrode 103 of the first light-emitting device module 100 and the circuit device layer CL.

[0102] Figure 6 An example of the circuit device layer CL including the transistor TFT is shown. The transistor TFT may be with reference to Figure 2The described first thin film transistor T1 or second thin film transistor T2. The circuit device layer CL may include a buffer layer BFL and a first insulating layer 10, a second insulating layer 20, and a third insulating layer 30.

[0103] The buffer layer BFL can improve the bonding strength between the substrate layer SUB and the conductive pattern or semiconductor pattern. Although not shown, a barrier layer for preventing the inflow of contaminants may be located on the top surface of the substrate layer SUB. The buffer layer BFL and the barrier layer may be selectively used or omitted.

[0104] The semiconductor pattern CSP of the transistor TFT may be located on the buffer layer BFL. The material for the semiconductor pattern CSP may be selected from amorphous silicon, polysilicon, or metal oxide semiconductor materials.

[0105] The first insulating layer 10 may be located on the semiconductor pattern CSP. The control electrode GE of the transistor TFT may be located on the first insulating layer 10. The control electrode GE may be formed by a photolithography process same as that of the scan line SL described with reference to Figure 2 description.

[0106] The second insulating layer 20 may be located on the first insulating layer 10 to cover the control electrode GE. The input electrode SE and the output electrode DE of the transistor TFT may be located on the second insulating layer 20.

[0107] The input electrode SE and the output electrode DE may be connected to two different portions of the semiconductor pattern CSP through a first contact hole CH1 and a second contact hole CH2 that penetrate the first insulating layer 10 and the second insulating layer 20. In an embodiment, the transistor TFT may be modified to have a bottom gate structure in which the control electrode GE is located below the semiconductor pattern CSP.

[0108] The third insulating layer 30 may be located on the second insulating layer 20 to cover the input electrode SE and the output electrode DE. The third insulating layer 30 may provide a flat top surface.

[0109] A part of the first pixel electrode 103 of the first light emitting device OD1 may overlap with the edge region MA.

[0110] The first pixel contact hole CK1 may be located in the edge region MA. In the edge region MA, the first pixel contact hole CK1 may penetrate the first light emitting device module 100, the second light emitting device module 200, and the third light emitting device module 300, as well as the third insulating layer 30, and may expose the output electrode DE of the transistor TFT.

[0111] The portion of the first pixel electrode 103 extending to the edge region MA may be exposed by the first pixel contact hole CK1.

[0112] The first pair of electrodes 107 may not overlap with the first pixel contact hole CK1 and may not be exposed by the first pixel contact hole CK1.

[0113] The first conductive layer MT1 may be located in the first pixel contact hole CK1. The first pixel electrode 103 may be electrically connected to the output electrode DE of the transistor TFT through the first conductive layer MT1.

[0114] The first conductive layer MT1 may be formed by forming a seed layer on the exposed surface of the output electrode DE and performing an electroplating process to fill the first pixel contact hole CK1 with a conductive metal.

[0115] Similar to the connection structure between the first pixel electrode 103 and the circuit device layer CL, the second pixel electrode 203 may be connected to the transistor of the circuit device layer CL through the second pixel contact hole CK2 (see, for example Figure 1 ), and the third pixel electrode 303 may be connected to the transistor of the circuit device layer CL through the third pixel contact hole CK3 (see, for example Figure 1 ).

[0116] Figure 7 is a cross-sectional view taken along the line III-III' of Figure 1 .

[0117] The connection structure between the first pair of electrodes 107 of the first light emitting device module 100 and the circuit device layer CL will be described with reference to Figure 7 .

[0118] The circuit device layer CL may include a power supply voltage pattern EVS. The power supply voltage pattern EVS may receive a constant reference voltage. Figure 7 An example is shown in which the power supply voltage pattern EVS is located between the first insulating layer 10 and the second insulating layer 20, but the present disclosure is not limited to this example. For example, the position of the power supply voltage pattern EVS may be variously changed.

[0119] A part of the first pair of electrodes 107 of the first light emitting device OD1 may overlap with the edge region MA.

[0120] The first pair of contact holes CB1 may be provided in the edge region MA. In the edge region MA, the first pair of contact holes CB1 may penetrate the first light emitting device module 100, the second light emitting device module 200, and the third light emitting device module 300, the second insulating layer 20, and the third insulating layer 30, and may expose the power supply voltage pattern EVS.

[0121] The portion of the first pair of electrodes 107 extending to the edge region MA may be exposed by the first pair of contact holes CB1.

[0122] The first pixel electrode 103 may not be stacked with the first counter contact hole CB1 and may not be exposed by the first counter contact hole CB1.

[0123] The second conductive layer MT2 may be located in the first counter contact hole CB1. The first pair of electrodes 107 may be electrically connected to the power supply voltage pattern EVS through the second conductive layer MT2.

[0124] In addition, the second pair of electrodes 207 and the third pair of electrodes 307 may be stacked with the edge region MA, and the second pair of electrodes 207 and the third pair of electrodes 307 may be partially exposed by the first counter contact hole CB1. The second pair of electrodes 207 and the third pair of electrodes 307 may be electrically connected to the power supply voltage pattern EVS through the second conductive layer MT2.

[0125] The second conductive layer MT2 may be formed by forming a seed layer on the exposed surface of the power supply voltage pattern EVS and performing an electroplating process to fill the first counter contact hole CB1 with a conductive metal.

[0126] In an embodiment, the power supply voltage pattern EVS may be electrically connected to the first pair of electrodes 107, the second pair of electrodes 207, and the third pair of electrodes 307 through the first counter contact hole CB1, the second counter contact hole CB2, and the third counter contact hole CB3, respectively. However, the present disclosure is not limited to this example, and in an embodiment, since the first pair of electrodes 107, the second pair of electrodes 207, and the third pair of electrodes 307 may receive the same voltage, one or more of the first counter contact hole CB1, the second counter contact hole CB2, and the third counter contact hole CB3 may be omitted.

[0127] Figure 8 is a cross-sectional view taken along line I-I' and shows a display device according to another embodiment of the present disclosure. Figure 1

[0128] In Figure 8 the following description of the display device 1001, features different from those of the display device 1000 according to the Figure 3 embodiment will be discussed.

[0129] The first light emitting device module 100, the second light emitting device module 200, and the third light emitting device module 300 may be sequentially arranged on the circuit device layer CL.

[0130] The first light emitting device module 100 may include a first substrate 131, a first light emitting device OD11, and a first non-emitting layer 141. The first light emitting device OD11 may include a first pixel electrode 133, a first light emitting layer 135, a first pair of electrodes 137, and a first protective layer 139.

[0131] The through-hole may not be located in the first substrate 131 of the first light-emitting device module 100. Thus, the first substrate 131 may overlap with the first pixel region PA1, the second pixel region PA2, and the third pixel region PA3.

[0132] The first light-emitting device OD11 may be located in the first pixel region PA1. The first pair of electrodes 137 and the first protective layer 139 of the first light-emitting device module 100 may overlap with the second pixel region PA2 and the third pixel region PA3.

[0133] The first non-emitting layer 141 may overlap not only with the edge region MA but also with the second pixel region PA2 and the third pixel region PA3.

[0134] The second light-emitting device module 200 may include a second substrate 231, a second light-emitting device OD21, and a second non-emitting layer 241. The second light-emitting device OD21 may include a second pixel electrode 233, a second light-emitting layer 235, a second pair of electrodes 237, and a second protective layer 239.

[0135] The seventh through-hole OP7 corresponding to the first pixel region PA1 may be provided in the second substrate 231. The second substrate 231 may overlap with the second pixel region PA2 and the third pixel region PA3.

[0136] The second light-emitting device OD21 may be located in the second pixel region PA2. The second pair of electrodes 237 and the second protective layer 239 of the second light-emitting device module 200 may overlap with the third pixel region PA3 but may not overlap with the first pixel region PA1.

[0137] The second non-emitting layer 241 may overlap not only with the edge region MA but also with the third pixel region PA3.

[0138] The third light-emitting device module 300 may include a third substrate 331, a third light-emitting device OD31, and a third non-emitting layer 341. The third light-emitting device OD31 may include a third pixel electrode 333, a third light-emitting layer 335, a third pair of electrodes 337, and a third protective layer 339.

[0139] The eighth through-hole OP8 corresponding to the first pixel region PA1 and the ninth through-hole OP9 corresponding to the second pixel region PA2 may be located in the third substrate 331. The third substrate 331 may overlap with the third pixel region PA3.

[0140] The third light-emitting device OD31 may be located in the third pixel region PA3. The third pair of electrodes 337 and the third protective layer 339 of the third light-emitting device module 300 may not overlap with the first pixel region PA1 and the second pixel region PA2.

[0141] The third non-emitting layer 341 may not overlap with the first pixel region PA1 and the second pixel region PA2.

[0142] In the process of manufacturing the display device 1001 described with reference to Figure 8 compared with the display device 1000 described with reference to Figure 3 it may be possible to omit the process of forming a through hole in the first substrate 131 of the first light-emitting device module 100. Therefore, compared with the Figure 3 display device 1000, the manufacturing process can be simplified.

[0143] Figure 9 is a plan view schematically showing a display device according to another embodiment of the present disclosure.

[0144] The first pixel PX11, the second pixel PX21, the third pixel PX31, and the fourth pixel PX41 that emit different colors of light may be located in the display area DA of the display device 1002. For example, the first pixel PX11, the second pixel PX21, the third pixel PX31, and the fourth pixel PX41 may emit red light, green light, blue light, and white light, respectively.

[0145] When compared with the display device 1000 described with reference to Figures 1 to 3 the Figure 3 display device 1000 may include three light-emitting device modules 100, 200, and 300 stacked in sequence, while Figure 9 the display device 1002 may include four light-emitting device modules stacked in sequence. The structure of the light-emitting device module may be substantially similar to each of the light-emitting device modules 100, 200, and 300 described with reference to Figure 3 and a detailed description may be omitted.

[0146] Figure 10 is a plan view showing an image information device according to an embodiment of the present disclosure.

[0147] The image information device 2000 may include a plurality of display devices 1100, 1200, 1300, and 1400. The plurality of display devices 1100, 1200, 1300, and 1400 may be electrically connected to each other to output a single continuous image.

[0148] Each of the display devices 1100, 1200, 1300, and 1400 may include a display area DA1 for displaying an image and a peripheral area PRA located outside the display area DA1.

[0149] The structure of each of the display devices 1100, 1200, 1300, and 1400 may be the same as that of the reference Figures 1 to 7The described display device 1000 is substantially similar, and a detailed description thereof may be omitted.

[0150] Unlike Figure 1 the display device 1000, in at least a part of the display devices 1100, 1200, 1300, and 1400 Figure 10 the driver, the power supply voltage line, the pads, etc. may not be located in the peripheral area PRA. If the driver, the power supply voltage line, and the pads are not located in the peripheral area PRA of the display device 1100, the width of the peripheral area PRA may be substantially the same as the width of the edge area MA between the pixels PX.

[0151] A printed circuit board or a cable for receiving signals from the outside may be connected to at least one of the display devices 1100, 1200, 1300, and 1400. In addition, the driver, etc. may be located in the peripheral area PRA of at least one of the display devices 1100, 1200, 1300, and 1400.

[0152] In the display devices 1100, 1200, 1300, and 1400 according to some embodiments of the present disclosure, compared with the comparative example, the edge area MA may have a relatively small width, and thus, a high-resolution display device may be enabled. In addition, since the plurality of display devices are electrically connected to each other, a high-resolution image information device 2000 may be enabled.

[0153] Figures 11A to 11H is a cross-sectional view taken along the line I-I' of Figure 1 and shows the process of manufacturing the first light-emitting device module of the display device shown in Figure 1 .

[0154] Referring to Figure 11A , a support substrate SP may be prepared. The substrate 101 may be located on the support substrate SP.

[0155] The substrate 101 may include silicon, glass, or plastic.

[0156] Referring to Figure 11A and Figure 11B , the first through hole OP1 and the second through hole OP2 corresponding to the second pixel area PA2 and the third pixel area PA3, respectively, may be located in the substrate 101. Thus, the first substrate 101 may be formed.

[0157] In the present embodiment, as an example of the method for forming the first through hole OP1 and the second through hole OP2, the process of irradiating the first substrate 101 with a laser LZ is shown. However, the present disclosure is not limited to this example, and the first through hole OP1 and the second through hole OP2 may be formed in the first substrate 101 using a dry etching process or a Bosch deep etching process.

[0158] Next, as shown in Figure 11B , a first conductive layer EL1 can be formed on the first substrate 101.

[0159] The first conductive layer EL1 can include iridium (Ir), chromium (Cr), or a mixture thereof.

[0160] In an embodiment, the first conductive layer EL1 can include a transparent conductive oxide (TCO) layer. The TCO layer can be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), or aluminum zinc oxide (AZO).

[0161] The first conductive layer EL1 can include multiple layers. In an embodiment, the first conductive layer EL1 can be a three-layer structure including an ITO / Ag / ITO layer.

[0162] Thereafter, a photosensitive film PR can be located on the first conductive layer EL1. The photosensitive film PR can be located on the region of the first conductive layer EL1 that covers the first pixel region PA1.

[0163] Next, as shown in Figure 11C , the first conductive layer EL1 can be patterned using the photosensitive film PR as an etch mask through a wet etching process or a dry etching process. Thus, a first pixel electrode 103 can be formed to overlap with the photosensitive film PR.

[0164] Referring to Figure 11D , the photosensitive film PR can be removed.

[0165] Referring to Figure 11E , a light-emitting pattern OLP can be formed on the first pixel electrode 103.

[0166] The light-emitting pattern OLP can be formed by sequentially depositing a hole control layer, an organic light-emitting layer, and an electron control layer.

[0167] Thereafter, as shown in Figure 11F , a mask MSK can be placed over the light-emitting pattern OLP. The mask MSK can block light incident on the first pixel region PA1 and can transmit light incident on regions outside the first pixel region PA1.

[0168] A first light SW can be irradiated through the mask MSK onto the light-emitting pattern OLP. The first light SW can be short-wavelength light or can have a wavelength of 300 nm or shorter.

[0169] A part of the light-emitting pattern OLP that overlaps with regions other than the first pixel region PA1 may be defined as the first non-emitting layer 111, and the first light SW may cause damage to the first non-emitting layer 111. By way of example, the first light SW may cause a break in the molecular structure of the part of the light-emitting pattern OLP that overlaps with regions other than the first pixel region PA1 (e.g., a break in the bonding structure of carbon molecules). Even when electrons and holes are injected into the light-emitting pattern OLP, the part of the light-emitting pattern OLP damaged by the first light SW does not emit light.

[0170] The first non-emitting layer 111 may play the same role as the pixel defining layer in a display device according to a comparative example. In an embodiment, since the first non-emitting layer 111 is formed by irradiation with the first light SW, it may not be necessary to separately form the pixel defining layer, and this may be able to simplify the manufacturing process.

[0171] A part of the light-emitting pattern OLP that is not irradiated by the first light SW may be defined as the first light-emitting layer 105, and may emit light when a voltage is applied to the first pixel electrode 103 and the first counter electrode 107.

[0172] Since a mask MSK is used to determine the region to be irradiated with the first light SW, it may be possible to control the size and position of the light-emitting region (e.g., the first pixel region PA1) that can effectively emit light.

[0173] Thereafter, as Figure 11G shown, the first counter electrode 107 may be formed on the first light-emitting layer 105 and the first non-emitting layer 111.

[0174] The first counter electrode 107 may include a conductive material having a low work function. For example, the first counter electrode 107 may include at least one of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), and alloys thereof. In an embodiment, the first counter electrode 107 may include at least one of aluminum (Al), silver (Ag), and magnesium-silver alloy (Mg:Ag). In an embodiment, the first counter electrode 107 may include an alloy in which the content of silver (Ag) is higher than the content of magnesium (Mg).

[0175] The first counter electrode 107 may be patterned in a manner similar to the process of forming the first pixel electrode 103 described with reference to Figures 11B to 11D Therefore, a detailed description of this process may be omitted.

[0176] Subsequently, a first protective layer 109 may be formed on the first pair of electrodes 107. The first protective layer 109 may include an insulating material. As a result, the process of manufacturing the first light-emitting device OD1 may be completed.

[0177] Thereafter, with reference to Figure 11H , the first substrate 101 may be separated from the support substrate SP. As a result, the manufacturing of the first light-emitting device module 100 may be completed.

[0178] The support substrate SP separated from the first substrate 101 may be discarded, or may be cleaned and reused.

[0179] In a display device according to an embodiment of the present disclosure, a plurality of light-emitting device modules may be located at different levels, which may be capable of reducing the distance between the light-emitting devices and implementing a high-resolution display device.

[0180] In a method of manufacturing a display device according to an embodiment of the present disclosure, short-wavelength light may be irradiated onto a light-emitting pattern located on a remaining area other than the light-emitting area. Thus, it may not be necessary to separately form a pixel defining layer. This may be capable of simplifying the manufacturing process.

[0181] Although example embodiments of the present disclosure have been specifically shown and described, those of ordinary skill in the art will understand that changes in form and detail may be made therein without departing from the spirit and scope of the present disclosure as set forth in the appended claims and their equivalents.

Claims

1. A display device, the display device comprises: a substrate including a first pixel region and a second pixel region adjacent to the first pixel region; a circuit device layer located on the substrate; a first light-emitting device module located on the circuit device layer, the first light-emitting device module comprising: a first non-emitting layer not overlapping with the first pixel region and a first light-emitting device overlapping with the first pixel region to display a first color, the first light-emitting device comprising a first light-emitting layer; and a second light-emitting device module located on the first light-emitting device module, the second light-emitting device module having a first pixel through-hole overlapping with the second pixel region, the second light-emitting device module further comprising a second light-emitting device overlapping with the second pixel region to display a second color different from the first color, wherein the first non-emitting layer and the first light-emitting layer are formed as a single integrated body, and the first non-emitting layer is formed by a portion of the single integrated body irradiated with light, and the first light-emitting layer is formed by a portion of the single integrated body not irradiated with light.

2. The display device according to claim 1, wherein, the first light-emitting device comprises a first pixel electrode, a first pair of electrodes opposite to the first pixel electrode, and the first light-emitting layer located between the first pixel electrode and the first pair of electrodes.

3. The display device according to claim 2, wherein, the first non-emitting layer comprises a first material different from a second material of the first light-emitting layer.

4. The display device according to claim 2, wherein, the first material included in the first non-emitting layer and the second material included in the first light-emitting layer have different molecular structures from each other.

5. The display device according to claim 2, wherein, when viewed in a plan view, the first non-emitting layer surrounds the first light-emitting layer.

6. The display device according to claim 2, wherein, the first light-emitting device further comprises a first protective layer located on the first pair of electrodes and comprising an insulating material.

7. The display device according to claim 2, wherein, a second pixel through-hole overlapping with a third pixel region is located in the first light-emitting device module.

8. The display device according to claim 7, wherein, the first light-emitting device module further comprises a first substrate located under the first light-emitting device to support the first light-emitting device, wherein the second pixel through-hole penetrates the first substrate.

9. The display device according to claim 2, wherein, the first non-emitting layer overlaps with the second pixel region.

10. A display device, the display device comprises: a substrate including a first pixel region and an edge region adjacent to the first pixel region; a circuit device layer located on the substrate; and a first light-emitting device module located on the circuit device layer, the first light-emitting device module comprising a first light-emitting device overlapping with the first pixel region to display a first color, the first light-emitting device module further comprising a first non-emitting layer overlapping with the edge region, Among them, the first light-emitting device includes a first pixel electrode, a first pair of electrodes opposite to the first pixel electrode, and a first light-emitting layer located between the first pixel electrode and the first pair of electrodes, and Among them, the first non-light-emitting layer and the first light-emitting layer form a single integrated body, and the first non-light-emitting layer is formed by a portion of the single integrated body irradiated with light, and the first light-emitting layer is formed by a portion of the single integrated body not irradiated with light.

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