Display device

Abstract

One embodiment of the present disclosure discloses a display device, comprising: a substrate, including a display area for displaying an image and a peripheral area arranged outside the display area; a display device, arranged in the display area and including a pixel electrode, a light-emitting layer and a counter electrode connected to a thin film transistor; a thin film encapsulation layer, covering the display device and stacked with a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer; and at least one groove, arranged in the peripheral area and at least partially filled with the thin film encapsulation layer, the groove having an undercut structure that is recessed in a thickness direction of a multilayer film including a first layer and a second layer above the first layer and the second layer protrudes toward the center direction of the groove.

Description

Technical Field

[0001] An embodiment of the present disclosure relates to a display device. Background Art

[0002] Display devices are devices for displaying images, and include liquid crystal display devices (Liquid Crystal Display), electrophoretic display devices (Electrophoretic Display), organic light emitting display devices (Organic Light Emitting Display), electroluminescent display devices (Field Emission Display), surface-conduction electron-emitter Display (Surface-conduction Electron-emitter Display), plasma display devices (Plasma Display), cathode ray display devices (Cathode Ray display), etc.

[0003] Such a display device includes a display area for displaying an image and a peripheral area where wiring for transmitting signals to the display area is arranged. Recently, in order to achieve thinness and lightness while maintaining high quality of the display device, research on technology for sealing the display area and the peripheral area with an organic film is actively underway. Summary of the invention

[0004] As a technology for sealing a display device, a thin film encapsulation layer (TFE) having a structure in which an inorganic encapsulation layer and an organic encapsulation layer are alternately stacked can be used.

[0005] Embodiments of the present disclosure provide a display device having an optimal thin film encapsulation layer.

[0006] The problems to be solved by the present disclosure are not limited to the problems mentioned above, and a person having ordinary knowledge in the art can clearly understand other problems not mentioned from the description of the present disclosure.

[0007] One embodiment of the present disclosure discloses a display device, comprising: a substrate, including a display area for displaying an image and a peripheral area arranged outside the display area; a display device, arranged in the display area and including a pixel electrode, a light-emitting layer and a counter electrode connected to a thin film transistor; a thin film encapsulation layer, covering the display device and stacked with a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer; and at least one groove, arranged in the peripheral area and filled with at least a portion of the thin film encapsulation layer, the groove having an undercut structure that is recessed in a thickness direction of a multilayer film including a first layer and a second layer above the first layer and that the second layer protrudes toward the center direction of the groove.

[0008] In one embodiment, a portion of the organic encapsulation layer may fill the inside of the groove, and the first inorganic encapsulation layer and the second inorganic encapsulation layer may be in contact with each other inside the groove.

[0009] In one embodiment, the display device may include a planarization layer, the planarization layer covers the groove and contains an organic insulator, and at least a portion of the planarization layer overlaps with the organic encapsulation layer.

[0010] In one embodiment, the display device may further include a blocking layer, wherein the blocking layer is located on the planarization layer and contains an inorganic substance.

[0011] In one embodiment, the at least one groove may include: a first groove; and a second groove located outside the display area than the first groove, the organic encapsulation layer fills the first groove, and a part of the organic encapsulation layer fills the second groove.

[0012] In one embodiment, the display device may further include: a through layer disposed between the thin film transistor and the display device; and a pixel definition film covering an edge of the pixel electrode, wherein the first layer contains the same substance as the through layer, and the second layer contains the same substance as the pixel definition film.

[0013] In one embodiment, an upper conductive layer containing the same material as that of the pixel electrode may be included between the first layer and the second layer.

[0014] In one embodiment, the through-layer may include an upper through-layer and a lower through-layer, the first layer includes the same material as the lower through-layer, and an intermediate layer including the same material as the upper through-layer is provided between the first layer and the upper conductive layer.

[0015] In one embodiment, the display device may further include a lower conductive layer, the lower conductive layer is disposed below the first layer, and the bottom surface of the groove is formed as a top surface of the lower conductive layer.

[0016] In one embodiment, the through-layer may include an upper through-layer and a lower through-layer, the first layer is made of the same material as the lower through-layer, and an intermediate conductive layer containing a conductive material is provided between the first layer and the upper conductive layer.

[0017] In one embodiment, the display device may further include an intermediate conductive layer, the intermediate conductive layer is disposed below the first layer, and the bottom surface of the groove is formed as a top surface of the intermediate conductive layer.

[0018] Other embodiments of the present disclosure disclose a display device, comprising: a substrate, including a display area for displaying an image and a peripheral area arranged outside the display area; a display device, arranged in the display area and including a pixel electrode, a light-emitting layer and a counter electrode connected to a thin film transistor; a thin film encapsulation layer, covering the display device and stacked with a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer; and a dam portion, arranged in the peripheral area and including a first dam and a second dam separated from each other, at least one of the first dam and the second dam having an undercut structure.

[0019] In one embodiment, a portion of the organic encapsulating layer may fill a space between the first dam and the second dam, and the first inorganic encapsulating layer may contact the second inorganic encapsulating layer in the space.

[0020] In one embodiment, the display device may include a planarization layer, the planarization layer covers the dam portion and contains an organic insulator, and at least a portion of the planarization layer overlaps with the organic encapsulation layer.

[0021] In one embodiment, the display device may further include a blocking layer, wherein the blocking layer is located on the planarization layer and contains an inorganic substance.

[0022] In one embodiment, the dam portion may further include a third dam, the third dam is located further outward from the display area than the first dam and the second dam, the separation space between the first dam and the second dam is filled with the organic encapsulation layer, and the separation space between the second dam and the third dam is partially filled with the organic encapsulation layer.

[0023] In one embodiment, the display device may further include: a through layer disposed between the thin film transistor and the display device; and a pixel definition film covering an edge of the pixel electrode, the first dam and the second dam respectively include a first layer and a second layer located above the first layer, the first layer contains the same substance as the through layer, and the second layer contains the same substance as the pixel definition film.

[0024] In one embodiment, an upper conductive layer containing the same material as that of the pixel electrode may be included between the first layer and the second layer.

[0025] In one embodiment, the through-layer may include an upper through-layer and a lower through-layer, the first layer includes the same material as the lower through-layer, and an intermediate layer including the same material as the upper through-layer is provided between the first layer and the upper conductive layer.

[0026] In one embodiment, the through-layer may include an upper through-layer and a lower through-layer, the first layer is made of the same material as the lower through-layer, and an intermediate conductive layer containing a conductive material is provided between the first layer and the upper conductive layer.

[0027] Other aspects, features and advantages other than the foregoing will become apparent from the following detailed description, claims and accompanying drawings for implementing the disclosure.

[0028] Effects of the Invention

[0029] According to the embodiment of the present disclosure configured as described above, the groove of the undercut structure is arranged in the peripheral region, so that the edge end phenomenon of the organic encapsulation layer can be minimized by utilizing the capillary phenomenon.

[0030] Of course, the scope of the present disclosure is not limited to this effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 FIG. 1 is a top view schematically showing a display device according to an embodiment of the present disclosure.

[0032] Figure 2A is briefly shown along Figure 1 A cross-sectional view of the cross section taken along the line II'.

[0033] Figure 2B FIG. 4 is a cross-sectional view enlarging a groove Gv in a display device according to an embodiment of the present disclosure.

[0034] Figure 2C This is a comparative example for explaining an edge tail.

[0035] Figure 3is a cross-sectional view briefly illustrating a display device according to other embodiments of the present disclosure.

[0036] Figure 4 is a cross-sectional view briefly illustrating a display device according to still other embodiments of the present disclosure.

[0037] Figure 5 is a cross-sectional view briefly illustrating a display device according to still other embodiments of the present disclosure.

[0038] Figure 6 is a cross-sectional view briefly illustrating a display device according to still other embodiments of the present disclosure.

[0039] Figure 7 is a cross-sectional view briefly illustrating a display device according to still other embodiments of the present disclosure.

[0040] Figure 8 is a cross-sectional view briefly illustrating a display device according to still other embodiments of the present disclosure.

[0041] Fig. 9 is a cross-sectional view briefly illustrating a display device according to still other embodiments of the present disclosure.

[0042] Fig.10 is a cross-sectional view briefly illustrating a display device according to still other embodiments of the present disclosure.

[0043] Description of Reference Numerals

[0044] 100: Substrate

[0045] 101: Buffer layer

[0046] 103: First gate insulating layer

[0047] 105: Second gate insulating layer

[0048] 107: Interlayer insulation layer

[0049] 109: Bottom penetration layer

[0050] 111: Upper penetration layer

[0051] 113: Pixel Definition Film

[0052] 116: Upper conductive layer

[0053] 118: Intermediate conductive layer

[0054] 120: Dam

[0055] 120a: First Dam

[0056] 120b: Second Dam

[0057] 120c: The third dam

[0058] 210: Lower conductive layer

[0059] 300: Display devices

[0060] 310: Pixel electrode

[0061] 320: Luminous layer

[0062] 330: Counter electrode

[0063] 400: Thin film encapsulation layer

[0064] 410: First inorganic encapsulation layer

[0065] 420: Organic encapsulation layer

[0066] 430: Second inorganic encapsulation layer

[0067] 500: Flattening layer

[0068] 501: Barrier layer DETAILED DESCRIPTION

[0069] The present disclosure may have many variations and various embodiments, and specific embodiments are illustrated in the accompanying drawings and described in detail in the detailed description. Figure 1 The effects and features of the present disclosure and methods for achieving them will become clear from the embodiments described in detail below. However, the present disclosure is not limited to the embodiments disclosed below, and can be implemented in various forms.

[0070] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the attached drawings. When describing with reference to the drawings, the same or corresponding components are given the same reference numerals, and repeated description thereof will be omitted.

[0071] In the following embodiments, the terms "first" and "second" are not restrictive but are used to distinguish one constituent element from other constituent elements.

[0072] In the following embodiments, a singular expression includes a plural expression unless the context clearly indicates otherwise.

[0073] In the following embodiments, the terms including or having mean that the features or constituent elements described in the specification are present, and do not exclude the possibility of adding one or more other features or constituent elements.

[0074] In the following embodiments, when a film, region, constituent element, etc. is located "on" or "over" other parts, it not only includes the case where other parts are directly located thereon, but also includes the case where other films, regions, constituent elements, etc. are interposed therebetween.

[0075] In the drawings, the size of the components may be exaggerated or reduced for the convenience of explanation. For example, the size and thickness of each structure shown in the drawings are arbitrarily shown for the convenience of explanation, and therefore the present disclosure is not necessarily limited to that shown in the drawings.

[0076] The display device, as a device for displaying images, may be a liquid crystal display device (Liquid Crystal Display, Apparatus), an electrophoretic display device (Electrophoretic Display Apparatus), an organic light emitting display device (Organic Light Emitting Display Apparatus), an inorganic EL display device (Inorganic Light Emitting Display Apparatus), an electroluminescent display device (Field Emission Display Apparatus), a surface-conduction electron-emitter Display Apparatus (Surface-conduction Electron-emitter Display Apparatus), a plasma display device (Plasma Display Apparatus), a cathode ray tube display device (Cathode Ray Display Apparatus), a quantum dot display device (Quantum Dot Display Apparatus), etc.

[0077] Hereinafter, an organic light emitting display device is described as an example of a display device according to an embodiment of the present disclosure. However, the display device of the present disclosure is not limited thereto, and various display devices may be used.

[0078] Figure 1 FIG. 1 is a top view schematically showing a portion of a display device according to an embodiment of the present disclosure. Figure 1 As shown, the display device according to the present embodiment includes a substrate 100. The substrate 100 includes a display area DA and a peripheral area PA arranged outside the display area DA.

[0079] A plurality of pixels may be arranged in the display area DA of the substrate 100 to display an image. A variety of display devices such as an organic light emitting diode (OLED), a thin film transistor, a capacitor, etc. may be arranged in the display area DA, and pixels may be formed by electrical coupling of the display devices, thin film transistors, capacitors, etc. to display an image. A driving current passing through the display device is generated according to the gate signal, data signal, driving voltage (ELVDD) and common voltage (ELVSS) supplied to the pixel, and the display device can emit light at a brightness corresponding to the driving current.

[0080] The peripheral area PA is arranged outside the display area DA. The peripheral area PA may be provided with wiring for supplying various signals and / or power applied to the display area DA. In addition to the wiring, a thin film transistor (not shown) for controlling the electrical signal applied to the display area DA may be provided. In addition, the peripheral area PA may be provided with a dam or groove for preventing the flow of an organic substance used in manufacturing the display device.

[0081] Figure 2A It is a brief illustration of Figure 1 A cross-sectional view of a display device taken along II', Figure 2B FIG. 1 is an enlarged cross-sectional view of a region including the groove Gv in a display device according to an embodiment of the present disclosure.

[0082] Reference Figure 2A , a display device according to an embodiment of the present disclosure includes: a substrate 100 including a display area DA and a peripheral area PA; and a thin film encapsulation layer 400 sealing the display area DA and the peripheral area PA.

[0083] The substrate 100 may include various raw materials. For example, the substrate 100 may be made of SiO 2 The substrate 100 is made of a transparent glass material as a main component. However, the substrate 100 is not necessarily limited thereto, and may also be formed of a transparent plastic material. The plastic material may be an organic material selected from the group consisting of polyethersulfone (PES), polyarylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyimide, polycarbonate (PC), triacetyl cellulose (TAC), and cellulose aceate propionate (CAP), which are insulating organic materials.

[0084] The buffer layer 101 is located on the substrate 100. The buffer layer 101 can reduce or cut off the penetration of foreign matter, moisture or external air from the bottom of the substrate 100, and the buffer layer 101 can provide a flat surface on the substrate 100. The buffer layer 101 can include inorganic substances such as oxides or nitrides, or organic substances, or organic-inorganic composites, and can be composed of a single layer or multilayer structure of inorganic and organic substances.

[0085] The first thin film transistor T1 includes a semiconductor layer A1, a first gate electrode G1, a source electrode S1, and a drain electrode D1. The second thin film transistor T2 includes a semiconductor layer A2, a second gate electrode G2, a source electrode S2, and a drain electrode D2.

[0086] In the following, the thin film transistors T1 and T2 are shown as top gate type thin film transistors, but the present embodiment is not limited thereto, and various types of thin film transistors such as bottom gate type thin film transistors may be used.

[0087] In addition, although the following diagram shows the case where there are two thin film transistors T1 and T2, this is not limited to this. In the embodiments of the present disclosure, the display device can use more than two thin film transistors T1 and T2 for one pixel. In some embodiments, the thin film transistors T1 and T2 can be used for one pixel. Various modifications can be made.

[0088] The semiconductor layers A1 and A2 may include amorphous silicon or polycrystalline silicon. As other embodiments, the semiconductor layers A1 and A2 may include oxides of at least one substance selected from the group consisting of indium (In), calcium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti) and zinc (Zn). The semiconductor layers A1 and A2 may include a channel region and a source region and a drain region having a higher carrier concentration than the channel region.

[0089] A first gate electrode G1 is disposed on the semiconductor layer A1 with the first gate insulating layer 103 interposed therebetween. The first gate electrode G1 may include molybdenum (Mo), aluminum (Al), copper (Cu) or titanium (Ti) and may be composed of a single layer or multiple layers. For example, the first gate electrode G1 may be a single layer of Mo.

[0090] The first gate insulating layer 103 is used to insulate the semiconductor layer A1 from the first gate electrode G1 and may include silicon oxide (SiO 2 ), Silicon Nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZnO 2 )wait.

[0091] As described above, the first gate electrode G1 of the first thin film transistor T1 and the second gate electrode G2 of the second thin film transistor T2 may be disposed in different layers, thereby enabling the driving ranges of the first thin film transistor T1 and the second thin film transistor T2 to be adjusted differently.

[0092] The first electrode CE1 of the storage capacitor Cst may be formed of the same material at the same layer as the first gate electrode G1. The second electrode CE2 of the storage capacitor Cst overlaps the first electrode CE1 with the second gate insulating layer 105 interposed therebetween. The second electrode CE2 may be formed of the same material at the same layer as the second gate electrode G2.

[0093] exist Figure 2A In the figure, the storage capacitor Cst is illustrated as not overlapping the first thin film transistor T1 and the second thin film transistor T2. However, this is not limited to this. For example, the storage capacitor Cst may be configured to overlap with the first thin film transistor T1. In some embodiments, the first electrode CE1 of the storage capacitor Cst may be formed integrally with the first gate electrode G1. That is, the first gate electrode G1 of the first thin film transistor T1 can perform the function of the first electrode CE1 of the storage capacitor Cst.

[0094] The interlayer insulating layer 107 may be formed to cover the second electrode CE2. The interlayer insulating layer 107 may include silicon oxide (SiO 2 ), Silicon Nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZnO 2 )wait.

[0095] The source electrodes S1, S2 and the drain electrodes D1, D2 are disposed on the interlayer insulating layer 107. The source electrode S and the drain electrode D may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu) or titanium (Ti), and may be formed of a multilayer or single layer including the above materials. As an example, the source electrodes S1, S2 and the drain electrodes D1, D2 may be formed of a multilayer structure of Ti / Al / Ti.

[0096] The lower through layer 109 and the upper through layer 111 may be located on the source electrodes S1, S2 and the drain electrodes D1, D2, and the display device 300 may be located on the upper through layer 111. The lower through layer 109 and the upper through layer 111 may be formed of a single layer or multiple layers of a film composed of an organic substance. The organic substance may include common general polymers such as polymethylmethacrylate (PMMA) and polystyrene (PS), polymer derivatives having a phenol group, acrylic polymers, imidic acid polymers, aromatic ether polymers, amide polymers, fluorine polymers, paraxylene polymers, vinyl alcohol polymers, and blends thereof. In addition, the lower through layer 109 and the upper through layer 111 may be formed of a composite laminate of an inorganic insulating film and an organic insulating film.

[0097] The connection metal CM may be located between the lower through layer 109 and the upper through layer 111. The connection metal CM may contact the source electrode S2 and the drain electrode D2 of the second thin film transistor T2 through the opening formed in the lower through layer 109 to be electrically connected to the second thin film transistor T2.

[0098] A wiring (not shown) which is separated from the connection metal CM and is made of the same material as the connection metal CM may be further arranged on the lower through-layer 109 .

[0099] exist Figure 2A In the figure, the lower through layer 109 and the upper through layer 111 are arranged between the thin film transistors T1, T2 and the display device 300, but the present disclosure is not limited to this. For example, only one of the lower through layer 109 and the upper through layer 111 may be arranged between the thin film transistors T1, T2 and the display device 300, and various modifications may be made.

[0100] In the display area DA of the substrate 100, the display device 300 including the pixel electrode 310, the counter electrode 330, and the light emitting layer 320 between the pixel electrode 310 and the counter electrode 330 and including the light emitting area may be located on the upper through-layer 111. The pixel electrode 310 may be in contact with the connection metal CM through the opening formed in the upper through-layer 111 to be electrically connected to the second thin film transistor T2.

[0101] The pixel electrode 310 may be a reflective electrode. For example, the pixel electrode 310 may include: a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and compounds thereof; and a transparent or semi-transparent electrode layer formed on the reflective film. The transparent or semi-transparent electrode layer may include indium tin oxide (ITO; indium tin oxide), indium zinc oxide (IZO; indium zinc oxide), zinc oxide (ZnO; zinc oxide), indium oxide (In 2 O 3 At least one selected from the group consisting of indium oxide (IGO), indium gallium oxide (IGO) and aluminum zinc oxide (AGO).

[0102] A pixel definition film 113 may be disposed above the upper through-layer 111. The pixel definition film 113 has openings corresponding to the respective sub-pixels, that is, an opening that exposes at least the central portion of the pixel electrode 310, thereby defining the pixel. In addition, the pixel definition film 113 increases the distance between the edge of the pixel electrode 310 and the counter electrode 330 above the pixel electrode 310, thereby preventing arcing from being generated at the edge of the pixel electrode 310. The pixel definition film 113 may be formed of an organic material such as polyimide or hexamethyldisiloxane (HMDSO).

[0103] The light-emitting layer 320 of the display device 300 may include low-molecular or high-molecular substances. In the case of including low-molecular substances, it may have a structure in which a hole injection layer (HIL), a hole transport layer (HTL), an emission region layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), etc. are stacked in a single or composite structure, and may include a variety of organic substances represented by copper phthalocyanine (CuPc), N,N'-di(napthalene-1-yl)-N,N'-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (tris-8-hydroxyquinoline aluminum) (Alq3), etc. This layer can be formed by vacuum evaporation.

[0104] When the light-emitting layer 320 includes a polymer substance, it may have a structure generally including a hole transport layer (HTL) and a light-emitting region layer (EML). In this case, the hole transport layer may include PEDOT (poly (3,4-ethylenedioxythiophene), and the light-emitting layer may include a polymer substance such as PPV (poly-phenylenevinylene) and polyfluorene. Such a light-emitting layer 320 may be formed by screen printing or inkjet printing, laser induced thermal imaging (LITI), or the like.

[0105] Of course, the light emitting layer 320 is not necessarily limited thereto, and may have various structures. In addition, the light emitting layer 320 may include a layer that is integrated across the plurality of pixel electrodes 310 , or may include a layer that is patterned corresponding to each of the plurality of pixel electrodes 310 .

[0106] The counter electrode 330 is disposed above the display area DA, and may also be Figure 2A That is, the counter electrode 330 may be integrally formed in a plurality of display devices to correspond to a plurality of pixel electrodes 310 .

[0107] The counter electrode 330 may be a light-transmitting electrode. For example, the counter electrode 330 may be a transparent or semi-transparent electrode, and may be formed of a metal thin film having a small work function and containing Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, or a compound thereof.

[0108] The pixel electrode 310 is formed of a reflective electrode and the counter electrode 330 is formed of a translucent electrode, thereby forming a front-emitting display device in which light emitted from the light-emitting layer 320 is emitted toward the counter electrode 330 side. However, the present embodiment is not limited thereto, and may also be formed as a back-emitting display device in which light emitted from the light-emitting layer 320 is emitted toward the substrate 100 side. In this case, the pixel electrode 310 may be formed of a transparent or semi-transparent electrode, and the counter electrode 330 may be formed of a reflective electrode. In addition, the display device of the present embodiment may also be a double-sided light-emitting type that emits light in both the front and back directions.

[0109] The thin film encapsulation layer 400 covers the display area DA and the peripheral area PA, and can prevent the penetration of external moisture and oxygen. The thin film encapsulation layer 400 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. Figure 2A In the figure, the thin film encapsulation layer 400 includes two inorganic encapsulation layers 410, 430 and an organic encapsulation layer 420. The stacking order and the number of stacking times are not limited to Figure 2A The embodiment shown in FIG.

[0110] The first inorganic encapsulation layer 410 covers the counter electrode 330 and may include silicon oxide, silicon nitride and / or silicon oxynitride. Of course, other layers such as a capping layer may be interposed between the first inorganic encapsulation layer 410 and the counter electrode 330 as required. Since the first inorganic encapsulation layer 410 is formed along the structure below it, Figure 2A As shown in the figure, its top surface is not flat. The organic encapsulation layer 420 covers the first inorganic encapsulation layer 410, and unlike the first inorganic encapsulation layer 410, its top surface can be roughly flat. Specifically, the top surface of the organic encapsulation layer 420 corresponding to the display area DA can be made roughly flat. This organic encapsulation layer 420 can include one or more materials selected from the group consisting of polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, sodium polyethylene sulfonate, polyoxymethylene, polyarylate, and hexamethyldisiloxane. The second inorganic encapsulation layer 430 covers the organic encapsulation layer 420 and can include silicon oxide, silicon nitride and / or silicon oxynitride, etc.

[0111] In this way, the thin film encapsulation layer 400 includes the first inorganic encapsulation layer 410, the organic encapsulation layer 420 and the second inorganic encapsulation layer 430. Even if cracks are generated in the thin film encapsulation layer 400, through this multi-layer structure, such cracks can be disconnected between the first inorganic encapsulation layer 410 and the organic encapsulation layer 420 or between the organic encapsulation layer 420 and the second inorganic encapsulation layer 430. Through this, it is possible to prevent or minimize the formation of a path for moisture or oxygen from the outside to penetrate into the display area DA and the peripheral area PA. Such a second inorganic encapsulation layer 430 contacts the first inorganic encapsulation layer 410 at its edge located outside the display area DA, so that the organic encapsulation layer 420 is not exposed to the outside.

[0112] In this embodiment, a groove Gv may be disposed in the peripheral area PA of the substrate 100. The groove Gv is formed in the multilayer film and has an undercut structure. Figure 2A 2 shows a multilayer film including a first layer 121 and second layers 123a and 123b located on the first layer 121. In addition, the second layers 123a and 123b protrude toward the center direction of the groove Gv, thereby forming an undercut structure.

[0113] The groove Gv may be formed along the depth direction of the multilayer film. Figure 2B As shown, the second layers 123a and 123b can be etched to form a second hole H penetrating the second layers 123a and 123b. 2 , etching the first layer 121 to form a first groove R recessed in the thickness direction of the first layer 121 1 . The first groove R 1 With the second hole H2 The grooves Gv may be spatially connected. The aforementioned etching may be isotropic etching and / or anisotropic etching.

[0114] The width of the portion of the groove Gv passing through the second layers 123a and 123b may be formed to be smaller than the width of the portion passing through the first layer 121. For example, the second hole H 2 Width W 2 (or diameter) can be formed to be larger than the first groove R 1 Width W 1 (or diameter) is small.

[0115] The first layer 121 and the second layers 123a and 123b may include organic insulating materials. For example, they may include polymer resins such as polyimide. In some embodiments, the first layer 121 may be formed simultaneously with the upper through-layer 111 using the same material, and the second layers 123a and 123b may be formed simultaneously with the pixel definition film 113 using the same material.

[0116] Such an undercut structure may be used to prevent the side ends from being formed long when the organic encapsulation layer 420 included in the thin film encapsulation layer 400 is formed.

[0117] In order to form the organic encapsulation layer 420 , a process of applying a liquid organic substance and then curing the liquid organic substance may be performed. In this case, the liquid organic substance flows toward the edge of the substrate 100 due to its fluidity.

[0118] In the present embodiment, the peripheral area PA of the substrate 100 is provided with a groove Gv having an undercut structure UC, so as to prevent the liquid organic material from flowing toward the edge direction of the substrate 100 through the undercut structure UC.

[0119] In case, if Figure 2C In that case, the groove Gv' does not include an undercut structure, and a portion of the liquid organic substance may flow along the inner side surface of the groove Gv' to the outside of the groove Gv' due to the flow characteristics.

[0120] That is, even if the organic encapsulation layer 420 does not fill up the groove Gv′ and overflow, the organic substance may be detected in the peripheral area PA because the organic substance forms an edge tail ET due to fluidity.

[0121] However, the embodiment of the present disclosure has an undercut structure UC in the groove Gv, and the liquid organic substance is gathered in the undercut structure UC by the capillary phenomenon of being sucked into the narrow area. Thus, the liquid organic substance can be prevented from passing along the inner side of the groove Gv. That is, the groove Gv with a concave undercut shape in cross section can minimize the edge tail ET of the organic substance of the organic encapsulation layer 420.

[0122] When a portion of the organic encapsulating layer 420 fills the inside of the groove Gv, the first inorganic encapsulating layer 410 and the second inorganic encapsulating layer 430 may be in contact with each other inside the groove Gv. As described above, the organic encapsulating layer 420 may not be exposed to the outside.

[0123] On the other hand, it can be understood that the groove Gv is provided by the first dam 120 a and the second dam 120 b that are separated from each other.

[0124] At least one of the first dam 120a and the second dam 120b may have an undercut structure UC. Therefore, the separation space between the first dam 120a and the second dam 120b may be filled with a portion of the organic encapsulation layer 420. At least one of the first dam 120a and the second dam 120b has an undercut structure UC, and the liquid organic matter is gathered in the undercut structure UC through the capillary phenomenon sucked into the narrow area. Thus, the liquid organic matter can be prevented from passing over along the inner side of the separation space. Therefore, the edge tail ET of the organic matter of the organic encapsulation layer 420 can be minimized.

[0125] The first inorganic encapsulating layer 410 and the second inorganic encapsulating layer 430 may be in contact with each other in the separated space, so that the organic encapsulating layer 420 may not be exposed to the outside.

[0126] The space separated by the first dam 120a and the second dam 120b may include an undercut section that is recessed in the thickness direction of the multilayer film including the first layer 121 and the second layers 123a and 123b. The first layer 121 and the upper through layer 111 may be formed of the same material, and the second layers 123a and 123b above the first layer 121 and the pixel definition film 113 may be formed of the same material.

[0127] In addition, a lower conductive layer 210 may be disposed in the peripheral area PA of the substrate 100. The lower conductive layer 210 may be a wiring for supplying power to the display area DA, and may be provided in the same layer and with the same material as the source electrodes S1 and S2 and the drain electrodes D1 and D2.

[0128] An intermediate conductive layer 118 may be disposed on the lower conductive layer 210. The intermediate conductive layer 118 may be connected to the counter electrode 330 of the display device 300 and function as a wiring for transmitting a common voltage (ELVSS). The intermediate conductive layer 118 may be made of the same material as the connection metal CM.

[0129] As described above, the upper through-layer 111 and the pixel definition film 113 may be composed of an organic substance. The bonding force of the organic substance to the metal is better than the bonding force to the inorganic substance constituting the interlayer insulating layer 107. Therefore, the first layer 121 is formed to be in contact with the intermediate conductive layer 118, so that the first layer 121 and the second layers 123a and 123b have excellent bonding force and can be stably formed. However, this is not limited to this. Various modifications such as excluding the intermediate conductive layer 118 can be performed.

[0130] exist Figure 2A , an example is shown in which the lower conductive layer 210 is connected to the counter electrode 330 through the intermediate conductive layer 118. However, the present disclosure is not limited thereto, and various modifications such as the lower conductive layer 210 being directly connected to the counter electrode 330 may be performed.

[0131] Figure 3 is a cross-sectional view briefly showing a display device according to another embodiment of the present disclosure. Figure 3 In Figure 2A Like reference numerals denote like components, and their repeated descriptions are omitted here for simplicity of description.

[0132] Reference Figure 3 According to an embodiment of the present disclosure, the display device comprises: a display device 300, which is arranged on a display area DA of a substrate 100; a thin film encapsulation layer 400, which covers the display device 300; and a groove Gv, which is arranged on a peripheral area PA of the substrate 100 and has an undercut structure.

[0133] The groove Gv may be formed along the depth direction of the multilayer film. Figure 3 As shown, the groove Gv may be formed by etching the second layers 123a and 123b to form a second hole H penetrating the second layers 123a and 123b. 2 , etching the first layers 121a and 121b to form a first hole H penetrating the first layers 121a and 121b 1 .

[0134] First hole H 1 With the second hole H 2 The groove Gv may be spatially connected. In this case, the bottom surface of the groove Gv may be provided as the top surface of the intermediate conductive layer 118 disposed below the groove Gv.

[0135] On the other hand, it can be understood that the groove Gv is provided by the first dam 120a and the second dam 120b separated from each other. The first layer 121a of the first dam 120a is separated from the first layer 121b of the second dam 120b, so that the size of the separation space between the first dam 120a and the second dam 120b can be increased. Therefore, the overflow of the organic substance of the organic encapsulation layer 420 can be more effectively controlled.

[0136] Figure 4 is a cross-sectional view briefly showing a display device according to yet another embodiment of the present disclosure. Figure 4 In Figure 3 Like reference numerals denote like components, and their repeated descriptions are omitted here for simplicity of description.

[0137] Reference Figure 4 According to an embodiment of the present disclosure, the display device comprises: a display device 300, which is arranged on a display area DA of a substrate 100; a thin film encapsulation layer 400, which covers the display device 300; and a groove Gv, which is arranged on a peripheral area PA of the substrate 100 and has an undercut structure.

[0138] In addition, the display device according to the present embodiment may include a planarization layer 500 covering the groove Gv.

[0139] The planarization layer 500 may include an organic insulating material. As an embodiment, the planarization layer 500 may be formed by coating a photoresist (negative or positive) or a polymer-based organic material on the thin film encapsulation layer 400 and patterning the same.

[0140] The planarization layer 500 may relieve stress that may be applied to the groove Gv and prevent cracks while filling a portion of the groove Gv.

[0141] A barrier layer 501 including an inorganic substance may be further included on the planarization layer 500. The barrier layer 501 and the planarization layer 500 can prevent or minimize the formation of a path for moisture or oxygen to penetrate from the outside to the peripheral area PA. The barrier layer 501 is in contact with the second inorganic encapsulation layer 430, so that the planarization layer 500 is not exposed to the outside.

[0142] In addition, the planarization layer 500 covers the area in the peripheral area PA where the organic encapsulation layer 420 does not exist, thereby improving the flatness of the display device. Therefore, it is possible to prevent the input sensing component or the optical functional component directly formed on the thin film encapsulation layer 400 or bonded through the adhesive layer from being separated or detached from the display device.

[0143] On the other hand, it can be understood that the groove Gv is provided by the dam portion 120 including the first dam 120 a and the second dam 120 b that are separated from each other.

[0144] In this case, the planarization layer 500 can relieve stress that may be applied to the dam portion 120 and prevent cracks while filling a portion of the space separating the first dam 120 a and the second dam 120 b .

[0145] The display device according to this embodiment may further include a barrier layer 501 including an inorganic substance and located on the planarization layer 500. The barrier layer 501 and the planarization layer 500 can prevent or minimize the formation of a path for moisture or oxygen from the outside to penetrate into the peripheral area PA.

[0146] Figure 5 is a cross-sectional view briefly showing a display device according to yet another embodiment of the present disclosure. Figure 5 In Figure 2A Like reference numerals denote like components, and their repeated descriptions are omitted here for simplicity of description.

[0147] Reference Figure 5 According to an embodiment of the present disclosure, the display device comprises: a display device (not shown) arranged on a display area DA of a substrate 100; a thin film encapsulation layer 400 covering the display device; and a groove Gv arranged on a peripheral area PA of the substrate 100 and having an undercut structure.

[0148] In addition, in this embodiment, the groove Gv may include a plurality of grooves. For example, the groove Gv may include a first groove Gv1 disposed close to the display area DA and a second groove Gv2 disposed away from the display area DA. However, this is not limited thereto. The groove Gv may include a third groove, etc., and other variations may be made.

[0149] The first groove Gv1 and the second groove Gv2 may be recessed in a thickness direction of the multilayer film including the first layers 121a, 121b, 121c and the second layers 123a, 123b, 123c, and the second layers 123a, 123b, 123c may have an undercut structure toward the center direction of the groove Gv.

[0150] The organic encapsulation layer 420 may be filled in the first groove Gv1. In addition, at least a portion of the organic substance of the organic encapsulation layer 420 may be filled in the second groove Gv2. In the case where the organic substance of the organic encapsulation layer 420 may overflow and fill the first groove Gv1 despite the formation of the groove Gv, the second groove Gv2 is formed, so that the edge tail ET of the organic substance can be minimized. However, this is not limited to this. There may be various variations such as only at least a portion of the organic substance of the organic encapsulation layer 420 is filled in the first groove Gv1.

[0151] The second groove Gv2 may include a planarization layer (not shown) including an organic insulating material. In addition, a barrier layer (not shown) including an inorganic material and located on the planarization layer (not shown) may also be included.

[0152] On the other hand, it can be understood that the first groove Gv1 is provided by the first dam 120a and the second dam 120b that are separated from each other. In addition, it can be understood that the second groove Gv2 is provided by the second dam 120b and the third dam 120c that are separated from each other.

[0153] Reference Figure 5 The dam portion 120 may include a third dam 120c located further outward from the display area DA than the first dam 120a and the second dam 120b. In addition, the third dam 120c may also form an undercut structure. Since the dam portion 120 includes a plurality of dams, it is possible to more effectively prevent the overflow of organic substances when forming the organic encapsulation layer 420. However, this is not limited to this. There may be various embodiments such as the dam portion 120 further including a fourth dam.

[0154] The space between the first dam 120a and the second dam 120b may be filled with the organic encapsulation layer 420. In addition, the space between the second dam 120b and the third dam 120c may be partially filled with the organic encapsulation layer 420. The third dam 120c is formed in a state where the organic substance of the organic encapsulation layer 420 overflows and fills the space between the first dam 120a and the second dam 120b, so that the edgetail ET of the organic substance can be minimized.

[0155] Figure 6 is a cross-sectional view briefly showing a display device according to yet another embodiment of the present disclosure. Figure 6 In Figure 3 Like reference numerals denote like components, and their repeated descriptions are omitted here for simplicity of description.

[0156] Reference Figure 6According to an embodiment of the present disclosure, the display device comprises: a display device (not shown) arranged on a display area DA of a substrate 100; a thin film encapsulation layer 400 covering the display device; and a groove Gv arranged on a peripheral area PA of the substrate 100 and having an undercut structure.

[0157] In this embodiment, an upper conductive layer 116 including the same substance as that of the pixel electrode 310 may be included between the first layer 121a, 121b and the second layer 123a, 123b. As described above, the first layer 121a, 121b and the second layer 123a, 123b may be composed of an organic substance, and the organic substance has a better bonding force with metal than with an inorganic substance constituting the interlayer insulating layer 107. Therefore, the first layer 121a, 121b and the second layer 123a, 123b have excellent bonding force and can be stably formed.

[0158] The upper conductive layer 116 may protrude toward the center of the groove Gv. Figure 6 , the upper conductive layer 116 is adjacent to the first inorganic encapsulation layer 410. However, this is not limited to this. The length of the upper conductive layer 116 in the central direction of the groove Gv may be greater than Figure 6 The short one shown in the picture.

[0159] The upper conductive layer 116 may be made of a conductive material. In order to form the groove Gv of the present embodiment, the first insulating layer, the conductive layer, and the second insulating layer may be sequentially deposited, and the conductive layer and the second insulating layer may be etched simultaneously, thereby forming the upper conductive layer 116 and the second layers 123a and 123b. Thereafter, after a photoresist is formed on the upper conductive layer 116 and the second layers 123a and 123b, the photoresist is used as a mask to etch the first insulating layer, thereby forming the first layers 121a and 121b. The etching may be dry etching. Thus, the groove Gv can be easily formed to be recessed in the thickness direction of the multilayer film including the first layers 121a and 121b and the second layers 123a and 123b, and the second layers 123a and 123b are made to protrude toward the center direction of the groove Gv.

[0160] On the other hand, it can be understood that the groove Gv is provided by the first dam 120 a and the second dam 120 b that are separated from each other.

[0161] An upper conductive layer 116 including the same substance as that of the pixel electrode 310 may be included between the first layer 121a of the first dam 120a and the second layer 123a of the first dam 120a and between the first layer 121b of the second dam 120b and the second layer 123b of the second dam 120b. As described above, the first layers 121a, 121b and the second layers 123a, 123b may be composed of an organic substance, and the organic substance has a better bonding strength with metal than with an inorganic substance constituting the interlayer insulating layer 107. Therefore, the first dam 120a and the second dam 120b have excellent bonding strength and can be stably formed.

[0162] Figure 7 is a cross-sectional view briefly showing a display device according to yet another embodiment of the present disclosure. Figure 7 In Figure 6 Like reference numerals denote like components, and their repeated descriptions are omitted here for simplicity of description.

[0163] Reference Figure 7 According to an embodiment of the present disclosure, the display device comprises: a display device (not shown) arranged on a display area DA of a substrate 100; a thin film encapsulation layer 400 covering the display device; and a groove Gv arranged on a peripheral area PA of the substrate 100 and having an undercut structure.

[0164] In this embodiment, the display device may include an upper through layer 111 and a lower through layer 109, and the first layers 121a and 121b may include the same material as the lower through layer 109. In addition, intermediate layers 125a and 125b including the same material as the upper through layer 111 may be included between the first layers 121a and 121b and the upper conductive layer 116.

[0165] As described above, the upper through layer 111 and the lower through layer 109 may contain organic substances and may be patterned by dry etching. In the case where the multilayer film is formed by the first layer 121a, 121b, the intermediate layer 125a, 125b and the second layer 123a, 123b, a deeper undercut structure may be formed. Therefore, the overflow of the organic substance of the organic encapsulation layer may be more effectively controlled.

[0166] On the other hand, it can be understood that the groove Gv is provided by the first dam 120 a and the second dam 120 b that are separated from each other.

[0167] The first layer 121a of the first dam 120a and the first layer 121b of the second dam 120b may include the same material as the lower through layer 109. In addition, intermediate layers 125a and 125b including the same material as the upper through layer 111 may be included between the first layer 121a of the first dam 120a and the first layer 121b of the second dam 120b and the upper conductive layer 116.

[0168] As described above, the upper through layer 111 and the lower through layer 109 may contain organic substances and may be patterned by dry etching. When the dam portion 120 is formed by the first layer 121a, 121b, the intermediate layer 125a, 125b and the second layer 123a, 123b, a deeper separation space can be formed. Therefore, the overflow of the organic substance of the organic encapsulation layer can be more effectively controlled.

[0169] Figure 8 is a cross-sectional view briefly showing a display device according to yet another embodiment of the present disclosure. Figure 8 In Figure 7 Like reference numerals denote like components, and their repeated descriptions are omitted here for simplicity of description.

[0170] Reference Figure 8 According to an embodiment of the present disclosure, the display device comprises: a display device (not shown) arranged on a display area DA of a substrate 100; a thin film encapsulation layer 400 covering the display device; and a groove Gv arranged on a peripheral area PA of the substrate 100 and having an undercut structure.

[0171] In this embodiment, Figure 8 In terms of the undercut structure, the display device may include a planarization layer 500 including an organic insulator and covering the groove Gv having an undercut shape with a concave cross-section.

[0172] Although not in Figure 8 As shown in the figure, the display device may further include a blocking layer including an inorganic material and located on the planarization layer 500 including an organic insulating material.

[0173] On the other hand, it can be understood that the groove Gv is provided by the first dam 120 a and the second dam 120 b that are separated from each other.

[0174] exist Figure 8 In the form of an undercut structure, the display device may include a planarization layer 500 covering the separation space provided by the first dam 120a and the second dam 120b and including an organic insulating material. Figure 8 As shown in the figure, a blocking layer located on the planarization layer 500 and containing an inorganic substance may also be included.

[0175] Fig. 9 is a cross-sectional view briefly showing a display device according to yet another embodiment of the present disclosure. Fig. 9 In Figure 3 Like reference numerals denote like components, and their repeated descriptions are omitted here for simplicity of description.

[0176] Reference Fig. 9 According to an embodiment of the present disclosure, the display device comprises: a display device (not shown) arranged on a display area DA of a substrate 100; a thin film encapsulation layer 400 covering the display device; and a groove Gv arranged on a peripheral area PA of the substrate 100 and having an undercut structure.

[0177] In this embodiment, the first layers 121a and 121b may include the same material as the lower through layer 109. An intermediate conductive layer 118 including a conductive material may be included between the first layers 121a and 121b and the upper conductive layers 116a and 116b.

[0178] In order to form the groove Gv of the present embodiment, the first insulating layer can be evaporated and etched to form the first layer 121a, 121b. After that, the intermediate conductive layer 118, the second insulating layer, the first conductive layer, and the third insulating layer can be sequentially evaporated, and the third insulating layer and the first conductive layer can be etched at the same time to form the second layer 123a, 123b and the upper conductive layer 116a, 116b. After that, after forming a photoresist on the upper conductive layer 116a, 116b and the second layer 123a, 123b, the photoresist can be used as a mask to etch and remove the second insulating layer. The etching can be dry etching. Thus, the groove Gv can be recessed along the thickness direction of the multilayer film including the first layer 121a, 121b and the intermediate conductive layer 118 and form an undercut on the second layer 123a, 123b and the upper conductive layer 116a, 116b.

[0179] On the other hand, it can be understood that the groove Gv is provided by the first dam 120a and the second dam 120b separated from each other. The first layer 121a of the first dam 120a and the first layer 121b of the second dam 120b may include the same material as the lower through layer 109. An intermediate conductive layer 118 containing a conductive material may be included between the first layers 121a, 121b and the upper conductive layers 116a, 116b.

[0180] The middle conductive layer 118 and the upper conductive layers 116 a and 116 b may both be made of metal materials and may have excellent bonding strength.

[0181] Fig.10 is a cross-sectional view briefly showing a display device according to yet another embodiment of the present disclosure. Fig.10In Fig. 9 Like reference numerals denote like components, and their repeated descriptions are omitted here for simplicity of description.

[0182] Reference Fig.10 According to an embodiment of the present disclosure, the display device comprises: a display device (not shown) arranged on a display area DA of a substrate 100; a thin film encapsulation layer 400 covering the display device; and a groove Gv arranged on a peripheral area PA of the substrate 100 and having an undercut structure.

[0183] In this embodiment, the display device may include a planarization layer 500 covering the groove Gv with a concave cross-section and containing an organic insulator. The planarization layer 500 can relieve stress caused by the groove Gv with a concave cross-section and prevent cracks. Fig.10 As shown in the figure, a blocking layer located on the planarization layer 500 and containing an inorganic substance may also be included.

[0184] On the other hand, it can be understood that the groove Gv is provided by the first dam 120 a and the second dam 120 b that are separated from each other.

[0185] Reference Fig.10 The display device may include a planarization layer 500 covering the space separating the first dam 120a and the second dam 120b and including an organic insulator. The planarization layer 500 can relieve stress caused by the dam portion 120 having a concave cross-section and prevent cracks.

[0186] Thus, the present disclosure is described with reference to one embodiment illustrated in the accompanying drawings, but it is only illustrative, and a person with ordinary knowledge in the art will understand that many variations and variations of the embodiments can be made therefrom. Therefore, the actual technical protection scope of the present disclosure should be determined by the technical ideas of the attached claims.

Claims

1. A display device, in, have: A substrate, comprising a display area for displaying an image and a peripheral area arranged outside the display area; A display device, arranged in the display area, and comprising a pixel electrode connected to the thin film transistor, a light emitting layer and a counter electrode; A thin film encapsulation layer, covering the display device and stacked with a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer; as well as at least one groove, arranged in the peripheral region and filled with at least a portion of the thin film encapsulation layer, The groove has an undercut structure in which the multilayer film including a first layer and a second layer on the first layer is recessed in the thickness direction and the second layer protrudes toward the center direction of the groove. A portion of the organic encapsulating layer fills the inside of the groove, and the first inorganic encapsulating layer is in contact with the second inorganic encapsulating layer in the inside of the groove.

2. The display device according to claim 1, in, The display device includes a planarization layer, the planarization layer covers the groove and contains an organic insulator, At least a portion of the planarization layer overlaps the organic encapsulation layer.

3. The display device according to claim 2, in, The display device further includes a blocking layer, which is located on the planarization layer and includes an inorganic substance.

4. The display device according to claim 1, in, The at least one groove includes: a first groove; and a second groove located further outward from the display area than the first groove, The organic encapsulation layer is filled in the first groove, A portion of the organic encapsulation layer fills the second groove.

5. The display device according to claim 1, in, The display device further includes: a through layer, disposed between the thin film transistor and the display device; and A pixel definition film covering the edge of the pixel electrode, The first layer comprises the same substance as the through layer, The second layer includes the same material as the pixel definition film.

6. The display device according to claim 5, in, An upper conductive layer including the same substance as that of the pixel electrode is included between the first layer and the second layer.

7. The display device according to claim 6, in, The through layer includes an upper through layer and a lower through layer, The first layer comprises the same material as the underlying through layer, An intermediate layer including the same material as that of the upper through-layer is included between the first layer and the upper conductive layer.

8. The display device according to claim 7, in, The display device further includes a lower conductive layer, wherein the lower conductive layer is disposed below the first layer. The bottom surface of the groove is formed as the top surface of the lower conductive layer.

9. The display device according to claim 6, in, The through layer includes an upper through layer and a lower through layer, The first layer is made of the same material as the lower through-layer, An intermediate conductive layer including a conductive substance is included between the first layer and the upper conductive layer.

10. The display device according to claim 1, in, The display device further includes an intermediate conductive layer, wherein the intermediate conductive layer is disposed below the first layer. The bottom surface of the groove is formed as the top surface of the intermediate conductive layer.

11. A display device, in, have: A substrate, comprising a display area for displaying an image and a peripheral area arranged outside the display area; A display device, arranged in the display area, and comprising a pixel electrode connected to the thin film transistor, a light emitting layer and a counter electrode; A thin film encapsulation layer, covering the display device and stacked with a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer; as well as The dam portion is disposed in the peripheral area and includes a first dam and a second dam separated from each other. At least one of the first dam and the second dam has an undercut structure, A portion of the organic encapsulating layer fills a space between the first dam and the second dam, and the first inorganic encapsulating layer is in contact with the second inorganic encapsulating layer in the space.

12. The display device according to claim 11, in, The display device includes a planarization layer, the planarization layer covers the dam portion and contains an organic insulator, At least a portion of the planarization layer overlaps the organic encapsulation layer.

13. The display device according to claim 12, in, The display device further includes a blocking layer, which is located on the planarization layer and includes an inorganic substance.

14. The display device according to claim 11, in, The dam portion further includes a third dam, and the third dam is located outside the display area more than the first dam and the second dam. The organic encapsulation layer is filled in the space between the first dam and the second dam. A space between the second dam and the third dam is partially filled with an organic encapsulation layer.

15. The display device according to claim 11, in, The display device further includes: a through layer, disposed between the thin film transistor and the display device; and A pixel definition film covering the edge of the pixel electrode, The first dam and the second dam respectively include a first layer and a second layer located on the first layer, The first layer comprises the same material as the through layer, The second layer includes the same material as the pixel definition film.

16. The display device according to claim 15, in, An upper conductive layer including the same substance as that of the pixel electrode is included between the first layer and the second layer.

17. The display device according to claim 16, in, The through layer includes an upper through layer and a lower through layer, The first layer comprises the same material as the underlying through layer, An intermediate layer including the same material as that of the upper through-layer is included between the first layer and the upper conductive layer.

18. The display device according to claim 16, in, The through layer includes an upper through layer and a lower through layer, The first layer is made of the same material as the lower through-layer, An intermediate conductive layer including a conductive substance is included between the first layer and the upper conductive layer.

Images