Display device and method for manufacturing the same

Abstract

A display device and a method of manufacturing the same are provided. The display device may include: a substrate including a display area and a sensor area, the display area including main pixels, and the sensor area including auxiliary pixels and a transmissive area; a first pixel electrode and a first light-emitting layer, both located in the main pixels; a second pixel electrode and a second light-emitting layer, both located in the auxiliary pixels; a counter electrode integrally disposed in the display area and the sensor area and defining an opening corresponding to the transmissive area; and an organic pattern layer surrounding at least a portion of the transmissive area.

Description

[0001] This application claims the priority and benefit of Korean Patent Application No. 10-2019-0055835, filed with the Korean Intellectual Property Office on May 13, 2019, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] One or more embodiments of the present disclosure relate to a display device and a method of manufacturing the same. Background Art

[0003] Recently, the uses of display devices have been diversified. In addition, as display devices have become thinner and lighter, they have been used more and more widely.

[0004] As display devices are used in various ways, various methods for designing various forms of display devices can be used, and functions that can be combined with or linked to display devices are increasing. Summary of the Invention

[0005] One or more embodiments of the present disclosure include a display device including a transmissive area in a sensor area. However, one or more embodiments are merely examples, and the scope of the present disclosure is not limited thereto.

[0006] Additional aspects will be partially set forth in the following description, and will be partially apparent from the description, or may be learned by practice of the presented embodiments.

[0007] According to one or more embodiments, a display device includes: a substrate including a display area and a sensor area, the display area including main pixels, and the sensor area including auxiliary pixels and a transmissive area; a first pixel electrode and a first light-emitting layer, both located in the main pixels; a second pixel electrode and a second light-emitting layer, both located in the auxiliary pixels; a counter electrode integrally disposed in the display area and the sensor area and defining an opening corresponding to the transmissive area; and an organic pattern layer surrounding at least a portion of the transmissive area.

[0008] The display device may further include: an inorganic insulating layer located on the substrate and defining a first hole corresponding to the transmissive area, wherein the counter electrode is located on a sidewall of the first hole.

[0009] The organic pattern layer may be located in the first hole.

[0010] The opening of the counter electrode may be smaller than the first hole.

[0011] The display device may further include: a functional layer disposed integrally in the display area and the sensor area between the first pixel electrode and the counter electrode, and defining an opening corresponding to the transmission area, wherein an opening of the counter electrode overlaps with the opening of the functional layer to form a transmission hole.

[0012] The display device may further include: a pixel defining layer covering edges of the first pixel electrode and the second pixel electrode, configured to define a light emitting area, and including the same material as the organic pattern layer.

[0013] One side of the organic pattern layer may be thicker than the other side of the organic pattern layer.

[0014] The counter electrode may be located on the organic pattern layer, and one side of the counter electrode may be thicker than the other side of the counter electrode.

[0015] The display device may further include: a lower electrode layer located in the sensor area, between the substrate and the auxiliary thin film transistor of the auxiliary pixel.

[0016] The display device may further include: a component located on the lower surface of the substrate and corresponding to the sensor area.

[0017] According to one or more embodiments, a display device includes: a substrate on which pixels of a display element and a transmission area are disposed; a pixel electrode and a light emitting layer located in the pixel; a counter electrode located on the light emitting layer and defining an opening corresponding to the transmission area; and an organic pattern layer located at the periphery of the transmission area, wherein the counter electrode is located on the organic pattern layer and has an uneven thickness.

[0018] The display device may further include: an inorganic insulating layer located on the substrate and defining a first hole corresponding to the transmission area, wherein the counter electrode is located on a sidewall of the first hole.

[0019] The organic pattern layer may be located in the first hole.

[0020] The opening of the counter electrode may be smaller than the first hole.

[0021] According to one or more embodiments, a method of manufacturing a display device is provided, the display device including a substrate having a display area including main pixels and a sensor area having auxiliary pixels and a transmission area, the method including: forming a sacrificial metal layer on an upper surface of the substrate overlapping with the transmission area; forming an initial organic pattern layer covering the sacrificial metal layer and corresponding to the transmission area; forming a counter electrode on the initial organic pattern layer; emitting a laser beam from a lower surface of the substrate toward the sacrificial metal layer; and peeling the sacrificial metal layer from the substrate.

[0022] The initial organic pattern layer may have a hemispherical shape.

[0023] The method may further include: forming an initial organic pattern layer using a halftone mask.

[0024] The method may further include: forming a pixel defining layer covering an edge of a pixel electrode of a main pixel using the same process as that for forming the initial organic pattern layer.

[0025] The method may further include: removing a part of the initial organic pattern layer such that the organic pattern layer is disposed in a periphery of a transmissive region.

[0026] The laser beam may include infrared light. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] These and / or other aspects will become apparent and more readily appreciated from the following description of embodiments in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is a schematic perspective view of a display device according to an embodiment;

[0029] Figure 2 is a schematic cross-sectional view of a display device according to an embodiment;

[0030] Figure 3 is a schematic plan view of a display panel according to an embodiment;

[0031] Figure 4 is Figure 3 a schematic plan view of a part of a sensor region of

[0032] Figure 5 is a schematic cross-sectional view of a part of a display region taken along line I-I' of Figure 3 and a part of a sensor region taken along line II-II' of Figure 4 according to an embodiment;

[0033] Figure 6 is Figure 5 an enlarged cross-sectional view of part III of

[0034] Figure 7 is a schematic cross-sectional view of a display device according to another embodiment; and

[0035] Figures 8A to 8C is a cross-sectional view showing a method of manufacturing a display device according to an embodiment. DETAILED DESCRIPTION

[0036] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as limited to the description set forth herein. Accordingly, the embodiments are described below only by referring to the accompanying drawings to explain aspects of the present description. As used herein, the term "and / or" includes any combination and all combinations of one or more of the associated listed items. When an expression such as "at least one of..." is located after a list of elements, it modifies the entire list of elements and not a single element in the list.

[0037] Since the present disclosure allows for various changes and many embodiments, specific embodiments will be illustrated in the accompanying drawings and described in detail in the written description. By the following detailed description of various embodiments in conjunction with the accompanying drawings, the effects and features of the present disclosure and the methods for achieving the effects and features of the present disclosure will become apparent to those skilled in the art. However, the present disclosure may be implemented in many different forms and should not be construed as limited to the embodiments set forth herein.

[0038] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings denote the same elements, and thus their descriptions will not be repeated.

[0039] It will be understood that although the terms "first", "second", etc. may be used herein to describe various components, these components should not be limited by these terms. These components are only used to distinguish one component from another.

[0040] As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are also intended to include the plural forms.

[0041] It will also be understood that the terms "comprises", "comprising", and / or their variants used herein specify the presence of the stated features or components, but do not preclude the presence or addition of one or more other features or components.

[0042] It will be understood that when a layer, region, or component is referred to as being "formed on" another layer, region, or component, the layer, region, or component may be formed directly or indirectly on the other layer, region, or component. That is, for example, there may be intervening layers, regions, or components.

[0043] For ease of explanation, the dimensions of the elements in the drawings may be exaggerated. In other words, since the dimensions and thicknesses of the components in the drawings are arbitrarily shown for ease of explanation, the following embodiments are not limited thereto.

[0044] When an embodiment can be implemented differently, the specific process order can be executed differently from the described order. For example, two consecutively described processes can be executed substantially simultaneously or in an order opposite to the described order.

[0045] It will be understood that when a layer, region, or component is referred to as being "connected to" or "coupled to" another layer, region, or component, the layer, region, or component can be "directly connected or coupled to" the other layer, region, or component, or "indirectly connected to" the other layer, region, or component, and an intermediate element is disposed between the layer, region, or component and the other layer, region, or component. For example, when a layer, region, or component is referred to as being "electrically connected to" or "electrically coupled to" another layer, region, or component, the layer, region, or component can be "directly electrically connected or coupled to" the other layer, region, or component, or "indirectly electrically connected to" the other layer, region, or component, and an intermediate element is disposed between the layer, region, or component and the other layer, region, or component.

[0046] Figure 1 is a schematic perspective view of a display device 1 according to an embodiment.

[0047] Referring to Figure 1 , the display device 1 includes a display area DA that presents an image and a non-display area NDA that does not present an image. The display device 1 can provide a main image by using light emitted from a plurality of main pixels Pm in the display area DA.

[0048] The display device 1 includes a sensor area SA. The sensor area SA can be an area where components such as sensors using infrared light, visible light, sound, etc. are disposed below. This will be described later with reference to Figure 2 this. The sensor area SA can include a transmission area TA through which light and / or sound is transmitted, where light and / or sound is output from the component to the outside, or where light and / or sound travels from the outside to the component. As an example, when infrared light is transmitted into the sensor area SA, the infrared light transmittance into the entire area of the sensor area SA can be about 15% or greater, 20% or greater, 25% or greater, 50% or greater, 85% or greater, or 90% or greater.

[0049] In this embodiment, a plurality of auxiliary pixels Pa may be arranged in the sensor area SA. The sensor area SA may provide a certain image by using the light emitted from the plurality of auxiliary pixels Pa. The image set in the sensor area SA is an auxiliary image, and thus, may have a resolution lower than that of the image provided in the display area DA. That is, since the sensor area SA includes a transmission area TA through which light and / or sound is transmitted into or through which light and / or sound is transmitted, the number of auxiliary pixels Pa that can be arranged in a unit area of the sensor area SA is smaller than the number of main pixels Pm arranged in a unit area of the display area DA.

[0050] The sensor area SA may be at least partially surrounded by the display area DA. As an example, Figure 1 it is shown that the entire sensor area SA is surrounded by the display area DA.

[0051] Hereinafter, the organic light emitting display device is explained as an example of the display device 1 according to the embodiment. However, the display device 1 in the present disclosure is not limited thereto. As another embodiment, the display device 1 in the present disclosure may be one or more of various types of display devices (such as an inorganic electroluminescence (EL) display (inorganic light emitting display) device, a quantum dot light emitting display device, etc.).

[0052] Figure 1 It is shown that the sensor area SA is arranged at one side (upper right side) of the display area DA having a rectangular shape. However, the present disclosure is not limited thereto. The display area DA may have a circular, elliptical or polygonal shape such as a triangle, a pentagon, etc. In other embodiments, the position and the number of the sensor areas SA may also be variously modified.

[0053] Figure 2 is a schematic cross-sectional view corresponding to the line A-A' of the display device 1 according to the embodiment Figure 1 of.

[0054] Referring to Figure 2 , the display device 1 may include a display panel 10 including display elements and a component 20 corresponding to the sensor area SA.

[0055] The display panel 10 may include a substrate 100, a display element layer 200 arranged on the substrate 100, and a thin film encapsulation layer 300 as an encapsulation member for sealing the display element layer 200. In addition, the display panel 10 may further include a lower protective film 175 under the substrate 100.

[0056] The substrate 100 may include glass or a polymer resin. When the substrate 100 includes a polymer resin, the substrate 100 may be flexible, rollable, or bendable. The substrate 100 may have a multilayer structure including a layer containing a polymer resin and an inorganic layer.

[0057] The display element layer 200 may include a circuit layer including a main thin film transistor TFT and an auxiliary thin film transistor TFT', a main organic light emitting diode OLED and an auxiliary organic light emitting diode OLED' as display elements, an inorganic insulating layer IL and an insulating layer IL' located between the circuit layer and the main organic light emitting diode OLED and the auxiliary organic light emitting diode OLED'.

[0058] In the display area DA, main pixels Pm may be arranged, where each main pixel Pm includes a main thin film transistor TFT and a main organic light emitting diode OLED connected thereto. In the sensor area SA, auxiliary pixels Pa may be arranged, where each auxiliary pixel Pa includes an auxiliary thin film transistor TFT' and an auxiliary organic light emitting diode OLED' connected thereto.

[0059] In addition, in the sensor area SA, a transmission area TA may be arranged, where the auxiliary thin film transistor TFT' and the display elements are not arranged in the transmission area TA. The transmission area TA may be understood as an area through which light and / or sound is transmitted, where light and / or sound travels from the component 20 to the outside or from the outside to the component 20.

[0060] The component 20 may be arranged in the sensor area SA. The component 20 may be an electronic component that uses light or sound. For example, the component 20 may be a sensor for receiving and using light (e.g., an infrared light sensor), a sensor for measuring distance by outputting and detecting light or sound, a sensor for fingerprint identification, etc., may be a small lamp for outputting light, or may be a speaker for outputting sound, etc. In the case of an electronic component that uses light, light in different wavelength bands (such as visible light, infrared light, ultraviolet light, etc.) may be used. A plurality of components 20 may be arranged in the sensor area SA. For example, a light emitting device and a light receiving device may be included as the component 20 in the sensor area SA. Alternatively, the light emitting device and the light receiving device may be included in the component 20.

[0061] The lower electrode layer BSM can be disposed in the sensor area SA. The lower electrode layer BSM can be disposed corresponding to the auxiliary pixel Pa. That is, the lower electrode layer BSM can be disposed corresponding to the lower part of the auxiliary thin film transistor TFT'. The lower electrode layer BSM can prevent or reduce external light reaching the auxiliary pixel Pa including the auxiliary thin film transistor TFT' and the like. For example, light emitted from the component 20 can be prevented from reaching the auxiliary pixel Pa. A constant voltage or signal is applied to the lower electrode layer BSM, thereby preventing the pixel circuit from being damaged by electrostatic discharge.

[0062] The thin film encapsulation layer 300 can include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In this regard, Figure 2 The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 and the organic encapsulation layer 320 between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 are shown.

[0063] The organic encapsulation layer 320 can include polymer-based materials. For example, the organic encapsulation layer 320 can include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate, polyacrylic acid, etc.) or some combination thereof.

[0064] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 can include one or more inorganic insulating materials selected from alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc peroxide, silicon oxide, silicon nitride, and silicon oxynitride. The second inorganic encapsulation layer 330 can cover the organic encapsulation layer 320 and can include silicon oxide, silicon nitride, and / or silicon oxynitride. The second inorganic encapsulation layer 330 can be deposited to be in direct contact with the first inorganic encapsulation layer 310 in the edge region of the display device 1. Therefore, the organic encapsulation layer 320 can be not exposed to the outside.

[0065] The lower protective film 175 is attached to the lower part of the substrate 100, thereby supporting and protecting the substrate 100. The lower protective film 175 can include / define an opening 175OP corresponding to the sensor area SA. Since the opening 175OP is included in the lower protective film 175, the light transmittance in the sensor area SA can be enhanced. The lower protective film 175 can include polyethylene terephthalate (PET) or polyimide (PI). When the substrate 100 includes glass, the lower protective film 175 can be omitted.

[0066] The sensor area SA can have a size larger than the size of the area where the component 20 is disposed. Therefore, the size of the opening 175OP in the lower protective film 175 may not match the size of the sensor area SA. For example, the opening 175OP can have a size smaller than the size of the sensor area SA.

[0067] In other embodiments, components such as an input detection member configured to detect a touch input, an antireflection member including a polarizer, a retarder, a color filter, or a black matrix, or a transparent window may also be disposed on the display panel 10.

[0068] In this embodiment, the thin film encapsulation layer 300 is shown as an encapsulation member configured to seal the display element layer 200. However, the present disclosure is not limited thereto. For example, an encapsulation substrate bonded to the substrate 100 using a sealant or frit may be used as a member for sealing the display element layer 200.

[0069] Figure 3 is a schematic plan view of a display panel 10 according to an embodiment.

[0070] Referring to Figure 3 , the display panel 10 is disposed in a display area DA and a non-display area NDA and includes a plurality of main pixels Pm. Each of the main pixels Pm may include a display element (such as a main organic light emitting diode OLED). Each of the main pixels Pm may emit, for example, red, green, blue, or white light via the main organic light emitting diode OLED. In the present specification, as described above, the main pixel Pm may be understood as a pixel for emitting light of a color among red, green, blue, and white. The display area DA is covered by the encapsulation member described above with reference to Figure 2 to protect the display area DA from external air, moisture, and the like.

[0071] A sensor area SA may be disposed inside the display area DA, and a plurality of auxiliary pixels Pa are disposed in the sensor area SA. Each of the auxiliary pixels Pa may include a display element (such as an auxiliary organic light emitting diode OLED'). Each of the auxiliary pixels Pa may emit, for example, red, green, blue, or white light via the auxiliary organic light emitting diode OLED'. In the present specification, as described above, the auxiliary pixel Pa may be a sub-pixel for emitting light of a color among red, green, blue, and white. In the sensor area SA, a transmissive area TA disposed between the auxiliary pixels Pa may be provided.

[0072] In an embodiment, the pixel circuit of the main pixel Pm may be the same as the pixel circuit of the auxiliary pixel Pa. However, the present disclosure is not limited thereto. The pixel circuit included in the main pixel Pm may be different from the pixel circuit included in the auxiliary pixel Pa.

[0073] Since the sensor area SA includes the transmissive area TA, the resolution of the sensor area SA can be smaller than the resolution of the display area DA. For example, the resolution of the sensor area SA can be about half of the resolution of the display area DA. In some embodiments, the resolution of the display area DA can be about 400 pixels per inch (ppi) or higher, and the resolution of the sensor area SA can be about 200 ppi.

[0074] Each of the main pixel Pm and the auxiliary pixel Pa can be electrically connected to a peripheral circuit in the non-display area NDA. In the non-display area NDA, a first scan driving circuit 110, a second scan driving circuit 120, a terminal 140, a data driving circuit 150, a first power supply line 160, and a second power supply line 170 can be arranged.

[0075] The first scan driving circuit 110 can provide a scan signal to each of the main pixel Pm and the auxiliary pixel Pa via a scan line SL. The first scan driving circuit 110 can provide a light emission control signal to each of the main pixel Pm and the auxiliary pixel Pa via a light emission control line EL. The second scan driving circuit 120 can be arranged in parallel with the first scan driving circuit 110, and the display area DA is located between the second scan driving circuit 120 and the first scan driving circuit 110. Some of the main pixel Pm and the auxiliary pixel Pa in the display area DA can be electrically connected to the first scan driving circuit 110, while some of the main pixel Pm and the auxiliary pixel Pa in the display area DA can be connected to the second scan driving circuit 120. In another embodiment, the second scan driving circuit 120 can be omitted.

[0076] The terminal 140 can be arranged at one side of the substrate 100. The terminal 140 can not be covered by an insulating layer, but instead can be exposed to be electrically connected to a printed circuit board PCB. A terminal PCB-P of the printed circuit board PCB can be electrically connected to the terminal 140 of the display panel 10. The printed circuit board PCB can deliver signals or power of a controller to the display panel 10. Control signals generated from the controller can be transmitted to the first scan driving circuit 110 and the second scan driving circuit 120 via the printed circuit board PCB. The controller can provide a first power voltage and a second power voltage to the first power supply line 160 and the second power supply line 170 respectively via a first connection line 161 and a second connection line 171. The first power voltage can be supplied to each of the main pixel Pm and the auxiliary pixel Pa via a driving voltage line PL connected to the first power supply line 160. The second power voltage can be supplied to a counter electrode of each of the main pixel Pm and the auxiliary pixel Pa connected to the second power supply line 170.

[0077] The data driving circuit 150 is electrically connected to the data line DL. The data signal of the data driving circuit 150 can be provided to each of the main pixel Pm and the auxiliary pixel Pa via the connection line 151 connected to the terminal 140 and via the data line DL connected to the connection line 151. Figure 3 It is shown that the data driving circuit 150 is arranged on the printed circuit board PCB. However, as another embodiment, the data driving circuit 150 can be arranged on the substrate 100. For example, the data driving circuit 150 can be arranged between the terminal 140 and the first power line 160.

[0078] The first power line 160 can include a first sub-line 162 and a second sub-line 163 that extend parallel to each other in the x direction, and the display area DA is located between the first sub-line 162 and the second sub-line 163. The second power line 170 can have an annular shape with an open side and can partially surround the display area DA.

[0079] Figure 4 is a schematic plan view of Figure 3 a part of the sensor area SA shown. Figure 5 is along Figure 3 a part of the display area DA taken along the line I-I' and a part of the sensor area SA taken along the line II-II' Figure 4 shown in a schematic cross-sectional view. Figure 6 is Figure 5 an enlarged view of area III of

[0080] Referring to Figure 4 , in the sensor area SA of the display device 1 according to the embodiment, auxiliary pixels Pa and transmissive areas TA are arranged. The auxiliary pixels (e.g., predetermined auxiliary pixels) Pa are arranged in sequence to form a pixel group Pg. At least one auxiliary pixel Pa can be included in the pixel group Pg. Figure 4 It is shown that the pixel group Pg includes four auxiliary pixels Pa arranged in two columns and two rows (e.g., 2 by 2 group). However, the present disclosure is not limited thereto. The number and arrangement of the auxiliary pixels Pa included in the pixel group Pg can be variously modified. For example, the pixel group Pg can include three auxiliary pixels Pa arranged parallel to each other in one column.

[0081] The transmissive area TA is an area where no display element is arranged, and thus has a high light transmittance. A plurality of transmissive areas TA can be included in the sensor area SA. The transmissive areas TA can be alternately arranged with the pixel group Pg in the first direction (e.g., x direction) and / or the second direction (e.g., y direction). Alternatively, the transmissive areas TA can be arranged to surround the pixel group Pg. Alternatively, the auxiliary pixels Pa can be arranged to surround the transmissive areas TA.

[0082] In the present embodiment, in the periphery of the transmissive region TA, the organic pattern layer OPL is arranged to surround at least a part of the transmissive region TA. It can be understood that the organic pattern layer OPL is arranged between the transmissive region TA and the pixel group Pg. Figure 4 It is shown that the organic pattern layer OPL is continuously arranged to surround the transmissive region TA. However, the organic pattern layer OPL is not limited thereto. A part of the organic pattern layer OPL can be cut. Thus, the organic pattern layer OPL can be variously modified.

[0083] Referring to Figure 5 , the display device 1 according to the embodiment includes a display region DA and a sensor region SA. The main pixels Pm are arranged in the display region DA. The auxiliary pixels Pa and the transmissive region TA are arranged in the sensor region SA.

[0084] The main pixel Pm may include a main thin film transistor TFT, a main storage capacitor Cst, and a main organic light emitting diode OLED. The auxiliary pixel Pa may include an auxiliary thin film transistor TFT', an auxiliary storage capacitor Cst', and an auxiliary organic light emitting diode OLED'. The transmissive region TA may include a transmissive hole TAH corresponding to the transmissive region TA. The organic pattern layer OPL is arranged at the periphery of the transmissive hole TAH.

[0085] The component 20 may be arranged below the sensor region SA. The component 20 may be an infrared (IR) sensor configured to transmit / receive infrared light. Since the transmissive region TA is arranged in the sensor region SA, the infrared light signal transmitted to / received from the component 20 can be transmitted into the sensor region SA. For example, the light emitted from the component 20 can travel in the z direction through the transmissive region TA. The light generated outside the display device 1 and incident on the component 20 can travel in the -z direction through the transmissive region TA.

[0086] Hereinafter, the structure of the components stacked in the display device 1 according to the present embodiment is described.

[0087] The substrate 100 may include glass or a polymer resin. The polymer resin may include polyether sulfone (PES), polyacrylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate (PAR), polyimide (PI), polycarbonate (PC), triacetyl cellulose (TAC), cellulose acetate propionate (CAP), etc. The substrate 100 including the polymer resin may be flexible, rollable, or bendable. In some embodiments, the substrate 100 may have a multilayer structure including a layer containing the polymer resin described above and an inorganic layer.

[0088] The buffer layer 111 may be positioned on the substrate 100 and may reduce or block the penetration of foreign substances, moisture, or external air from below the substrate 100. The buffer layer 111 may provide a planarized surface to the substrate 100. The buffer layer 111 may include an inorganic material such as an oxide or a nitride, an organic material, or an organic-inorganic composite. The buffer layer 111 may include a single layer, or may include multiple layers including an inorganic material and an organic material. In other embodiments, a barrier layer for blocking the penetration of external air may also be included between the substrate 100 and the buffer layer 111. In some embodiments, the buffer layer 111 may include silicon nitride (SiN x ) and / or silicon oxide (SiO 2 ). The buffer layer 111 may be provided such that a first buffer layer 111a and a second buffer layer 111b are stacked in the buffer layer 111.

[0089] In the sensor area SA, the lower electrode layer BSM may be disposed between the first buffer layer 111a and the second buffer layer 111b. As another embodiment, the lower electrode layer BSM may be disposed between the substrate 100 and the first buffer layer 111a. The lower electrode layer BSM is disposed under the auxiliary thin film transistor TFT' to prevent the characteristics of the auxiliary thin film transistor TFT' from deteriorating due to light emitted from the component 20 or the like.

[0090] In addition, the lower electrode layer BSM may be connected to a line GCL disposed on a layer different from the lower electrode layer BSM via a contact hole. The lower electrode layer BSM may be supplied with a constant voltage from the line GCL. For example, the lower electrode layer BSM may receive a driving voltage or a scan signal. When the lower electrode layer BSM receives a constant voltage or a signal, the possibility of electrostatic discharge may be greatly reduced. The lower electrode layer BSM may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and / or copper (Cu). The lower electrode layer BSM may include a single layer or multiple layers including the materials described above.

[0091] The main thin film transistor (TFT) and the auxiliary thin film transistor (TFT') may be disposed on the buffer layer 111. The main thin film transistor (TFT) may include a first semiconductor layer A1, a first gate electrode G1, a first source electrode S1, and a first drain electrode D1. The auxiliary thin film transistor (TFT') may include a second semiconductor layer A2, a second gate electrode G2, a second source electrode S2, and a second drain electrode D2. The main thin film transistor (TFT) may be connected to a main organic light emitting diode (OLED) in the display area (DA) to drive the main organic light emitting diode (OLED). The auxiliary thin film transistor (TFT') may be connected to an auxiliary organic light emitting diode (OLED') in the sensor area (SA) to drive the auxiliary organic light emitting diode (OLED').

[0092] The first semiconductor layer A1 and the second semiconductor layer A2 may be disposed on the buffer layer 111 and may include polysilicon. As another embodiment, the first semiconductor layer A1 and the second semiconductor layer A2 may include amorphous silicon. As another embodiment, the first semiconductor layer A1 and the second semiconductor layer A2 may include an oxide of at least one material selected from the group consisting of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). The first semiconductor layer A1 and the second semiconductor layer A2 may include a channel region, and may include a source region and a drain region that are both doped with impurities.

[0093] The second semiconductor layer A2 may be stacked on the lower electrode layer BSM, and a second buffer layer 111b is between the second semiconductor layer A2 and the lower electrode layer BSM. As an example, the second semiconductor layer A2 may be set to have a width narrower than the width of the lower electrode layer BSM. Therefore, when viewing the second semiconductor layer A2 in a direction perpendicular to the substrate 100, the whole of the second semiconductor layer A2 may be stacked on the lower electrode layer BSM.

[0094] The first gate insulating layer 112 may be provided to cover the first semiconductor layer A1 and the second semiconductor layer A2. The first gate insulating layer 112 may include an inorganic insulating material such as SiO 2 , SiN x , silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ), zinc peroxide (ZnO 2 ), etc. The first gate insulating layer 112 may include a single layer, or may include a multi-layer including one or more of the materials described above.

[0095] On the first gate insulating layer 112, the first gate electrode G1 and the second gate electrode G2 are arranged to overlap the first semiconductor layer A1 and the second semiconductor layer A2, respectively. The first gate electrode G1 and the second gate electrode G2 may include Mo, Al, Cu, Ti, etc., and may include a single layer or multiple layers. As an example, the first gate electrode G1 and the second gate electrode G2 may include a single Mo layer.

[0096] The second gate insulating layer 113 may be provided to cover the first gate electrode G1 and the second gate electrode G2. The second gate insulating layer 113 may include an inorganic insulating layer (such as SiO 2 、SiN x 、SiON、Al 2 O 3 、TiO 2 、Ta 2 O 5 、HfO 2 、ZnO 2 etc.). The second gate insulating layer 113 may include a single layer or multiple layers containing the inorganic insulating materials described above.

[0097] The first upper electrode CE2 of the main storage capacitor Cst and the second upper electrode CE2' of the auxiliary storage capacitor Cst' may be arranged on the second gate insulating layer 113.

[0098] In the display area DA, the first upper electrode CE2 may overlap the first gate electrode G1 below the first upper electrode CE2. The first gate electrode G1 and the first upper electrode CE2 overlap each other, and the second gate insulating layer 113 is located between the first gate electrode G1 and the first upper electrode CE2 and constitutes the main storage capacitor Cst. The first gate electrode G1 may be the first lower electrode CE1 of the main storage capacitor Cst.

[0099] In the sensor area SA, the second upper electrode CE2' may overlap the second gate electrode G2 below the second upper electrode CE2'. The second gate electrode G2 and the second upper electrode CE2' overlap each other, and the second gate insulating layer 113 is located between the second gate electrode G2 and the second upper electrode CE2' and may constitute the auxiliary storage capacitor Cst'. The second gate electrode G2 may be the second lower electrode CE1' of the auxiliary storage capacitor Cst'.

[0100] The first upper electrode CE2 and the second upper electrode CE2' may include Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, and / or Cu, and may include a single layer or multiple layers containing one or more of the materials described above.

[0101] The interlayer insulating layer 115 may be provided to cover the first upper electrode CE2 and the second upper electrode CE2'. The interlayer insulating layer 115 may include SiO 2 , SiN x , SiON, Al 2 O 3 , TiO 2 , Ta 2 O 5 , HfO 2 , ZnO 2 , etc.

[0102] When the first gate insulating layer 112, the second gate insulating layer 113, and the interlayer insulating layer 115 are collectively referred to as the inorganic insulating layer IL, the inorganic insulating layer IL may define a first hole H1 corresponding to the transmission region TA. The first hole H1 may be provided to expose the upper surface of the buffer layer 111 or the upper surface of the substrate 100. The first hole H1 may be formed such that a first opening of the first gate insulating layer 112, a second opening of the second gate insulating layer 113, and a third opening of the interlayer insulating layer 115 are arranged corresponding to the transmission region TA and are stacked on each other. The first opening to the third opening may all be formed by using a separate process, or may be formed simultaneously by using the same process. Alternatively, for example, the first opening and the second opening may be formed simultaneously, and the third opening may be formed separately. Thus, the formation of the first opening to the third opening may be variously modified. When the first opening to the third opening are formed by using a separate process, a height difference may be formed at one side of the first hole H1.

[0103] The inorganic insulating layer IL may include a groove instead of the first hole H1 that exposes the buffer layer 111. For example, the first gate insulating layer 112 in the inorganic insulating layer IL may be continuously arranged corresponding to the transmission region TA, and the second gate insulating layer 113 and the interlayer insulating layer 115 may respectively include a second opening and a third opening corresponding to the transmission region TA.

[0104] Alternatively, the first gate insulating layer 112 and the second gate insulating layer 113 may be continuously arranged corresponding to the transmission region TA, and the interlayer insulating layer 115 may include a third opening corresponding to the transmission region TA. Thus, various modifications may be made.

[0105] As another embodiment, the inorganic insulating layer IL may omit the first hole H1 corresponding to the transmission region TA. Since the inorganic insulating layer IL may have a transmittance of light that can be transmitted / received through the component 20, the inorganic insulating layer IL may not include the first hole H1 corresponding to the transmission region TA.

[0106] The source electrodes S1 and S2 and the drain electrodes D1 and D2 are disposed on the interlayer insulating layer 115. The source electrodes S1 and S2 and the drain electrodes D1 and D2 may include a conductive material containing Mo, Al, Cu, Ti, etc. and may include a single layer or multiple layers containing the materials described above. As an example, the source electrodes S1 and S2 and the drain electrodes D1 and D2 may have a multilayer structure including Ti / Al / Ti.

[0107] The planarization layer 117 may be disposed to cover the source electrodes S1 and S2 and the drain electrodes D1 and D2. The planarization layer 117 may include a planarized upper surface such that both the first pixel electrode 221 and the second pixel electrode 221' are flatly disposed on the planarization layer 117.

[0108] The planarization layer 117 may include a single layer or multiple layers containing an organic material or an inorganic material. The planarization layer 117 may include benzocyclobutene (BCB), PI, hexamethyldisiloxane (HMDSO), general polymers such as polymethyl methacrylate (PMMA) or polystyrene (PS), polymer derivatives containing phenolic groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorine polymers, parylene polymers, vinyl alcohol polymers, or blends thereof. The planarization layer 117 may include SiO 2 SiN x SiON, Al 2 O 3 TiO 2 Ta 2 O 5 HfO 2 ZnO 2 etc. After forming the planarization layer 117, chemical or mechanical polishing may be performed to provide a planar upper surface to the planarization layer 117.

[0109] The planarization layer 117 may include a second hole H2 corresponding to the transmission region TA. The second hole H2 may be disposed to overlap with the first hole H1. Figure 5 It is shown that the width W2 of the second hole H2 is greater than the width W1 of the first hole H1. However, the present disclosure is not limited thereto. For example, the planarization layer 117 may be provided to cover the edge of the first hole H1 of the inorganic insulating layer IL, and thus, the width of the second hole H2 may be less than the width of the first hole H1.

[0110] In the planarization layer 117, there is an opening, wherein the opening exposes one of the first source electrode S1 and the first drain electrode D1 of the main thin film transistor TFT. The first pixel electrode 221 may be in contact with the first source electrode S1 or the first drain electrode D1 via the opening, thereby being electrically connected to the main thin film transistor TFT.

[0111] In addition, the planarization layer 117 includes an opening that exposes one of the second source electrode S2 and the second drain electrode D2 of the auxiliary thin film transistor TFT'. Accordingly, the second pixel electrode 221' can be in contact with the second source electrode S2 or the second drain electrode D2 via the opening, and thus be electrically connected to the auxiliary thin film transistor TFT'.

[0112] The first pixel electrode 221 and the second pixel electrode 221' may include a conductive oxide (such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), or aluminum zinc oxide (AZO)). As another example, the first pixel electrode 221 and the second pixel electrode 221' may include a reflective layer such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a mixture thereof. As another example, the first pixel electrode 221 and the second pixel electrode 221' may include a layer containing ITO, IZO, ZnO, or In 2 O 3 above / below the reflective layer described above. In some embodiments, the first pixel electrode 221 and the second pixel electrode 221' may include a structure in which ITO / Ag / ITO is stacked therein.

[0113] The pixel defining layer 119 may cover the edges of each of the first pixel electrode 221 and the second pixel electrode 221'. The pixel defining layer 119 is stacked with each of the first pixel electrode 221 and the second pixel electrode 221', and includes a first opening OP1 and a second opening OP2 that each define a light emitting region of the pixel. The pixel defining layer 119 may increase the distance between the edges of the first pixel electrode 221 and the second pixel electrode 221' and the counter electrode 223 on the first pixel electrode 221 and the second pixel electrode 221', thereby preventing arcing or the like from occurring at the edges of the first pixel electrode 221 and the second pixel electrode 221'. The pixel defining layer 119 may include an organic insulating material such as PI, polyamide, acrylic resin, BCB, HMDSO, phenolic resin, etc., and may be formed by using a spin coating method or the like.

[0114] The pixel defining layer 119 may include a third hole H3 positioned in the transmissive region TA. The third hole H3 may be stacked with the first hole H1 and the second hole H2. As the first hole H1, the second hole H2, and the third hole H3 are formed, the light transmittance of the transmissive region TA may be enhanced. The counter electrode 223, which will be described later, may be disposed on the inner walls of the first hole H1, the second hole H2, and the third hole H3.

[0115] The organic pattern layer OPL may be disposed inside the first hole H1, the second hole H2, and the third hole H3. The organic pattern layer OPL may be disposed to be spaced apart from the inner wall of the first hole H1. The thickness of the organic pattern layer OPL may increase in the direction from the edge of the first hole H1 to the center of the first hole H1, that is, the thickness of one side of the organic pattern layer OPL may be greater than the thickness of the other side of the organic pattern layer OPL.

[0116] The organic pattern layer OPL may include a structure for forming a transmissive hole TAH to be described later. The function of the organic pattern layer OPL will be described later.

[0117] The organic pattern layer OPL may include various organic materials. In some embodiments, the organic pattern layer OPL may be formed simultaneously with the pixel defining layer 119 from the same material as that of the pixel defining layer 119. For example, the organic pattern layer OPL may include PI, polyamide, acrylic resin, BCB, HMDSO, phenolic resin, etc.

[0118] In the present embodiment, the first functional layer 222a is disposed to cover the pixel defining layer 119. The first functional layer 222a may include a single layer or multiple layers. The first functional layer 222a may include a single hole transport layer (HTL). Alternatively, the first functional layer 222a may include a hole injection layer (HIL) and an HTL. The first functional layer 222a may be integrally formed to correspond to the main pixels Pm and the auxiliary pixels Pa included in the display area DA and the sensor area SA, respectively.

[0119] On the first functional layer 222a, the first light emitting layer 222b and the second light emitting layer 222b' are disposed to correspond to the first pixel electrode 221 and the second pixel electrode 221', respectively. The first light emitting layer 222b and the second light emitting layer 222b' may include a polymer material or a low molecular weight film. The first light emitting layer 222b and the second light emitting layer 222b' may emit red light, green light, blue light, or white light.

[0120] The second functional layer 222c may be disposed on the first light emitting layer 222b and the second light emitting layer 222b'. The second functional layer 222c may include a single layer or multiple layers. The second functional layer 222c may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The second functional layer 222c may be integrally disposed to correspond to the main pixels Pm and the auxiliary pixels Pa included in the display area DA and the sensor area SA, respectively. The first functional layer 222a and / or the second functional layer 222c may be omitted.

[0121] The counter electrode 223 is disposed on the second functional layer 222c. The counter electrode 223 may include a conductive material having a low work function. For example, the counter electrode 223 may include a (semi) transparent layer containing Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, their alloys, etc. Optionally, the counter electrode 223 may further include a layer containing ITO, IZO, ZnO, or In 2 O 3 on the (semi) transparent layer containing the materials described above. The counter electrode 223 may be integrally arranged to correspond to the main pixels Pm and the auxiliary pixels Pa included in the display area DA and the sensor area SA, respectively.

[0122] The layers within the range from the first pixel electrode 221 to the counter electrode 223 in the display area DA may form the main organic light-emitting diode OLED. The layers within the range from the second pixel electrode 221' to the counter electrode 223 in the sensor area SA may form the auxiliary organic light-emitting diode OLED'.

[0123] The capping layer 250 may be disposed on the counter electrode 223. The capping layer 250 may include lithium fluoride (LiF). Optionally, the capping layer 250 may include an inorganic insulating material (such as silicon nitride) and / or an organic insulating material. In some embodiments, the capping layer 250 may be omitted.

[0124] In the present embodiment, the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and / or the capping layer 250 may be disposed on the organic pattern layer OPL. The thickness of each of the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and / or the capping layer 250 may not be constant. For example, on the organic pattern layer OPL, when the counter electrode 223 is near the inner wall of the first hole H1, the counter electrode 223 may have a small thickness. That is, one side of the counter electrode 223 may have a thickness smaller than the thickness of the other side of the counter electrode 223. Optionally, it can be understood that the thickness of the counter electrode 223 is non-uniform on the organic pattern layer OPL.

[0125] In the present embodiment, the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and the capping layer 250 may include a transmissive hole TAH corresponding to the transmissive area TA. That is, as Figure 6As shown, each of the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and the cover layer 250 may include openings 222aH, 222cH, 223H, and 250H corresponding to the transmission region TA. In some embodiments, the widths of the openings 222aH, 222cH, 223H, and 250H that form the transmission hole TAH may be substantially the same as each other. For example, the width of the opening 223H of the counter electrode 223 may be substantially the same as the width Wt of the transmission hole TAH.

[0126] In addition, in this embodiment, the first functional layer 222a, the second functional layer 222c, and the cover layer 250 may be omitted. In this case, the opening 223H of the counter electrode 223 may be the transmission hole TAH.

[0127] The transmission hole TAH corresponding to the transmission region TA may be a transmission hole TAH that overlaps the transmission region TA. In this case, the transmission hole TAH may have a size smaller than the size of the first hole H1 in the inorganic insulating layer IL. To this end, Figure 5 The width Wt of the transmission hole TAH that is smaller than the width W1 of the first hole H1 is shown. Here, the size of the transmission hole TAH and the size of the first hole H1 may be defined as the size of the narrowest opening.

[0128] In some embodiments, the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and the cover layer 250 may be disposed on the sidewalls of the first hole H1, the second hole H2, and the third hole H3. In some embodiments, the inclination of the sidewalls of the first hole H1, the second hole H2, and the third hole H3 with respect to the upper surface of the substrate 100 may be smaller than the inclination of the side surface of the transmission hole TAH with respect to the upper surface of the substrate 100.

[0129] Forming the transmission hole TAH means removing members (such as the counter electrode 223, etc.) corresponding to the transmission region TA. Therefore, the light transmittance in the transmission region TA can be greatly increased.

[0130] The main organic light-emitting diode OLED and the auxiliary organic light-emitting diode OLED' may be covered by the encapsulation substrate 300A. The encapsulation substrate 300A includes a transparent material. For example, the encapsulation substrate 300A may include a glass material. Alternatively, the encapsulation substrate 300A may include a polymer resin or the like. The encapsulation substrate 300A can reduce or prevent external moisture or foreign matter from penetrating into the main organic light-emitting diode OLED and the auxiliary organic light-emitting diode OLED'.

[0131] A sealing material such as a sealant may be disposed between the substrate 100 and the encapsulation substrate 300A, wherein the main organic light-emitting diode OLED and the auxiliary organic light-emitting diode OLED' are disposed on the substrate 100. The sealing material may block external moisture or foreign matter that may penetrate between the substrate 100 and the encapsulation substrate 300A.

[0132] Figure 7 is a schematic cross-sectional view of the display device 1 according to another embodiment. In Figure 7 In, Figure 5 the same reference numerals in the same figures denote the same elements, and thus their description will be omitted.

[0133] Referring to Figure 7 , in the display device 1 according to the present embodiment, the thin film encapsulation layer 300 is disposed on the cover layer 250. The thin film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In this regard, Figure 7 shows a structure in which the first inorganic encapsulation layer 310, the organic encapsulation layer 320, and the second inorganic encapsulation layer 330 are stacked in the thin film encapsulation layer 300. In another embodiment, the number of organic encapsulation layers, the number of inorganic encapsulation layers, and the stacking order of the organic encapsulation layer and the inorganic encapsulation layer may be changed.

[0134] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include at least one inorganic insulating material selected from alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc peroxide, silicon oxide, silicon nitride, and silicon oxynitride. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be formed by using a chemical vapor deposition (CVD) method or the like. The organic encapsulation layer 320 may include a polymer material. The polymer material may include a silicone resin, an acrylic resin, an epoxy resin, PI, polyethylene, etc.

[0135] The first inorganic encapsulation layer 310, the organic encapsulation layer 320, and the second inorganic encapsulation layer 330 may be integrally formed to cover the display area DA and the sensor area SA. Therefore, the first inorganic encapsulation layer 310, the organic encapsulation layer 320, and the second inorganic encapsulation layer 330 may be disposed in the transmission hole TAH.

[0136] As another embodiment, the organic encapsulation layer 320 may be integrally formed to cover the display area DA and the sensor area SA, but may not exist in the transmission area TA. In other words, the organic encapsulation layer 320 may include an opening corresponding to the transmission area TA. In this case, the first inorganic encapsulation layer 310 may contact the second inorganic encapsulation layer 330 in the transmission hole TAH.

[0137] Figures 8A to 8C is a cross-sectional view sequentially showing a method of manufacturing the display device 1 according to an embodiment.

[0138] Referring to Figure 8A , a sacrificial metal layer ML is formed in a first hole H1 in the inorganic insulating layer IL. The sacrificial metal layer ML may include metals such as Ag, Al, Pt, Pd, Au, Ni, Mo, Ti, etc. In addition, in other embodiments, the sacrificial metal layer ML may further include a layer containing ITO, IZO, ZnO, or In 2 O 3 above or below the metals described above. In an embodiment, the sacrificial metal layer ML may be formed simultaneously with the first pixel electrode 221 and the second pixel electrode 221' from the same material as the first pixel electrode 221 and the second pixel electrode 221'.

[0139] Then, an initial organic pattern layer POPL is formed in the first hole H1 of the inorganic insulating layer IL to cover the sacrificial metal layer ML. The initial organic pattern layer POPL may include various organic materials (such as PI, polyamide, acrylic resin, BCB, HMDSO, phenolic resin, etc.). In some embodiments, the initial organic pattern layer POPL may include a photosensitive organic material.

[0140] In some embodiments, the initial organic pattern layer POPL may be formed simultaneously with the pixel defining layer 119 from the same material as the pixel defining layer 119. However, the present disclosure is not limited thereto. The initial organic pattern layer POPL may be formed by using a process different from the process for forming the pixel defining layer 119.

[0141] The initial organic pattern layer POPL may include an inclined surface that forms an acute angle with respect to the upper surface of the substrate 100. In some embodiments, the initial organic pattern layer POPL may be formed in a hemispherical shape. The hemispherical shape of the initial organic pattern layer POPL may be formed by using a halftone mask. For example, after an organic material layer for forming the initial organic pattern layer POPL is applied to the inside of the first hole H1, the amount of exposure transmitted to the organic material layer is changed according to the position in the organic material layer by using a halftone mask. Next, the initial organic pattern layer POPL having a hemispherical shape may be formed by performing a developing operation and a curing operation.

[0142] Then, on the initial organic pattern layer POPL, a first functional layer 222a, a second functional layer 222c, a counter electrode 223, and a cover layer 250 may be sequentially and integrally formed in the display area DA and the sensor area SA.

[0143] In this case, due to the shape of the initial organic pattern layer POPL, the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and / or the cover layer 250 may have a small thickness at the edge of the initial organic pattern layer POPL. In some embodiments, the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and / or the cover layer 250 may be short-circuited at the edge of the initial organic pattern layer POPL.

[0144] Next, referring to Figure 8B , a laser beam LP is emitted from the lower surface of the substrate 100 toward the sacrificial metal layer ML in the transmission region TA. That is, the laser beam LP can travel in the z direction from the lower surface of the substrate 100 to be emitted toward the lower surface of the sacrificial metal layer ML. The laser beam LP may have a wavelength of infrared light. When the laser beam LP is infrared light, since the transmittance of the infrared light with respect to the substrate 100 and the buffer layer 111 is about 80% to 90% or higher, the laser beam LP can effectively reach the sacrificial metal layer ML.

[0145] Since the sacrificial metal layer ML includes an opaque metal, the sacrificial metal layer ML can absorb the laser beam LP. Therefore, thermal expansion occurs in the sacrificial metal layer ML, and the portion of the sacrificial metal layer ML where the laser beam LP is emitted can be peeled off from the substrate 100 or the buffer layer 111.

[0146] As the portion of the sacrificial metal layer ML is peeled off, a portion of the initial organic pattern layer POPL, a portion of the first functional layer 222a, a portion of the second functional layer 222c, a portion of the counter electrode 223, and a portion of the cover layer 250 can be removed together with the sacrificial metal layer ML, wherein the portion of the first functional layer 222a, the portion of the second functional layer 222c, the portion of the counter electrode 223, and the portion of the cover layer 250 are disposed on the peeled sacrificial metal layer ML. Therefore, as shown in Figure 8C , an organic pattern layer OPL arranged to surround the periphery of the transmission region TA is formed, and a transmission hole TAH including the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and the cover layer 250 can be formed.

[0147] When the inorganic material layer, the organic material layer, the counter electrode 223, etc. in the transmission region TA are removed by emitting the laser beam LP from the upper portion of the substrate 100 along the -z direction to form the transmission hole TAH, the laser processing surface will be secondarily damaged by particles, where particles are generated in the process of removing the inorganic material layer, the organic material layer, the counter electrode 223, etc. However, in this embodiment, since peeling caused by thermal expansion in the sacrificial metal layer ML is used, the problem of damage caused by particles does not occur.

[0148] In addition, since the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and the cover layer 250 have small thicknesses at the edges of the initial organic pattern layer POPL, portions of the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and the cover layer 250 can be removed without unintentional secondary damage.

[0149] In the display device according to the embodiment, pixel units and transmissive regions with enhanced light transmittance are arranged in a sensor region corresponding to components such as sensors. Accordingly, an environment in which the components can operate can be provided, and at the same time, an image can be realized in a region overlapping with the components.

[0150] Accordingly, a display device having various functions and enhanced quality can be provided.

[0151] It should be understood that the embodiments described herein should be considered only in a descriptive sense and not for purposes of limitation. The description of features or aspects within each embodiment should generally be considered available for other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the drawings, those of ordinary skill in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope as defined by the claims and their functional equivalents to be included therein.

Claims

1. A display device, the display device comprises: a substrate including a display area and a sensor area, the display area including main pixels, and the sensor area including auxiliary pixels and a transmission area; an inorganic insulating layer located on the substrate and defining a first hole corresponding to the transmission area; a first pixel electrode and a first light-emitting layer, both located in the main pixel; a second pixel electrode and a second light-emitting layer, both located in the auxiliary pixel; a counter electrode integrally disposed in the display area and the sensor area and defining an opening corresponding to the transmission area; and an organic pattern layer surrounding at least a part of the transmission area, wherein the organic pattern layer is located in the first hole.

2. The display device according to claim 1, wherein the counter electrode is located on a sidewall of the first hole.

3. The display device according to claim 2, wherein the opening of the counter electrode is smaller than the first hole.

4. The display device according to claim 1, the display device further comprises: a functional layer integrally disposed in the display area and the sensor area between the first pixel electrode and the counter electrode and defining an opening corresponding to the transmission area, wherein the opening of the counter electrode is superimposed on the opening of the functional layer to form a transmission hole.

5. The display device according to claim 1, the display device further comprises: a pixel defining layer covering edges of the first pixel electrode and the second pixel electrode, configured to define a light-emitting area, and including the same material as the organic pattern layer.

6. The display device according to claim 1, wherein one side of the organic pattern layer is thicker than the other side of the organic pattern layer.

7. The display device according to claim 1, wherein the counter electrode is located on the organic pattern layer, and one side of the counter electrode is thicker than the other side of the counter electrode.

8. The display device according to claim 1, the display device further comprises: a lower electrode layer located in the sensor area, between the substrate and an auxiliary thin-film transistor of the auxiliary pixel.

9. The display device according to claim 1, the display device further comprises: a component located on a lower surface of the substrate and corresponding to the sensor area.

10. A display device, the display device comprises: a substrate on which pixels of display elements and a transmission area are arranged; an inorganic insulating layer located on the substrate and defining a first hole corresponding to the transmission area; a pixel electrode and a light-emitting layer located in the pixel; a counter electrode located on the light-emitting layer and defining an opening corresponding to the transmission area; and an organic pattern layer located at a periphery of the transmission area, wherein the counter electrode is located on the organic pattern layer and has an uneven thickness, and wherein the organic pattern layer is located in the first hole.

11. The display device according to claim 10, wherein the counter electrode is located on a sidewall of the first hole.

12. The display device according to claim 11, wherein The opening of the counter electrode is smaller than the first hole.

13. A method of manufacturing a display device, the display device including a substrate having a display area including main pixels and a sensor area including auxiliary pixels and a transmissive area, the method comprising: forming a sacrificial metal layer on an upper surface of the substrate overlapping with the transmissive area; forming an initial organic pattern layer covering the sacrificial metal layer and corresponding to the transmissive area; forming a counter electrode on the initial organic pattern layer; emitting a laser beam from a lower surface of the substrate toward the sacrificial metal layer; and peeling the sacrificial metal layer from the substrate.

14. The method according to claim 13, wherein the initial organic pattern layer has a hemispherical shape.

15. The method according to claim 14, the method further comprising: using a halftone mask to form the initial organic pattern layer.

16. The method according to claim 13, the method further comprising: forming a pixel defining layer covering an edge of a pixel electrode of the main pixel using the same process for forming the initial organic pattern layer.

17. The method according to claim 13, the method further comprising: removing a part of the initial organic pattern layer such that the organic pattern layer is disposed in a periphery of the transmissive area.

18. The method according to claim 13, wherein the laser beam includes infrared light.

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