Materials forming nucleation-inhibiting coatings and devices incorporating the same

Abstract

A photovoltaic device includes a substrate; a first electrode disposed on the substrate; a semiconductor layer disposed on the first electrode; a second electrode disposed on the semiconductor layer, the second electrode having a first portion and a second portion; a nucleation inhibiting coating disposed on the first portion of the second electrode; and a conductive coating disposed on the second portion of the second electrode, wherein the nucleation inhibiting coating is a compound of Formula (I)

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Provisional Patent Application No. 62 / 625,710, filed February 2, 2018; U.S. Provisional Patent Application No. 62 / 625,722, filed February 2, 2018; and U.S. Provisional Patent Application No. 62 / 770,360, filed November 21, 2018, the disclosure of which is incorporated herein by reference in its entirety for any and all purposes. Technical Field

[0003] The following generally relates to materials used to form nucleation-inhibiting coatings for selectively depositing conductive coatings on surfaces. Specifically, optoelectronic devices incorporating such nucleation-inhibiting and conductive coatings are described. Background Technology

[0004] Organic light-emitting diodes (OLEDs) typically comprise several layers of organic material interposed between conductive thin-film electrodes, at least one of which is an electroluminescent layer. When a voltage is applied to the electrodes, holes and electrons are injected from the anode and cathode, respectively. The injected holes and electrons migrate through the organic layers to the electroluminescent layer. When the holes and electrons are very close, they attract each other due to Coulomb forces. The holes and electrons can then combine to form a bound state called an exciton. Excitons can decay through a radiative recombination process, in which a photon is released. Alternatively, excitons can decay through a non-radiative recombination process, in which no photon is released. Note that, as used herein, the internal quantum efficiency (IQE) will be understood as the proportion of all electron-hole pairs generated in the device that decay through radiative recombination.

[0005] Depending on the spin state of the electron-hole pairs (i.e., excitons), radiative recombination can occur as either fluorescence or phosphorescence. Specifically, excitons formed from electron-hole pairs can be characterized as having either a singlet or triplet spin state. Typically, the radiative decay of singlet excitons leads to fluorescence, while the radiative decay of triplet excitons leads to phosphorescence.

[0006] Recently, other light-emitting mechanisms for OLEDs have been proposed and studied, including thermally activated delayed fluorescence (TADF). In short, TADF emission occurs by the conversion of triplet excitons into singlet excitons via a reverse intersystem crossing process using thermal energy, followed by radiative decay of the singlet excitons.

[0007] The external quantum efficiency (EQE) of an OLED device can be referred to as the ratio of the number of charge carriers supplied to the OLED device to the number of photons emitted by the device. For example, an EQE of 100% means that one photon is emitted for every electron injected into the device. As will be understood, the EQE of a device is typically much lower than its IQE. The difference between EQE and IQE can usually be attributed to many factors, such as light absorption and reflection caused by the various components of the device.

[0008] OLED devices are generally classified as "bottom-emitting" or "top-emitting" devices, depending on the relative direction of the light emitted from the device. In a bottom-emitting device, light generated by radiative recombination is emitted towards the substrate of the device, while in a top-emitting device, light is emitted away from the substrate. Therefore, in a bottom-emitting device, the electrodes closer to the substrate are generally made transparent (e.g., substantially transparent or translucent), while in a top-emitting device, the electrodes farther from the substrate are generally made transparent to reduce light attenuation. Depending on the specific device structure, the anode or cathode can serve as the transmitting electrode in both top-emitting and bottom-emitting devices.

[0009] OLED devices can also be bifacial emitters, configured to emit light simultaneously in two directions relative to a substrate. For example, a bifacial emitter may include a transmissive anode and a transmissive cathode, such that light from each pixel is emitted in both directions. In another example, a bifacial emitter display may include a first set of pixels configured to emit light in one direction and a second set of pixels configured to emit light in the other direction, such that a single electrode from each pixel is transmissive.

[0010] In addition to the device configurations described above, transparent or semi-transparent OLED devices can also be implemented, wherein the device includes transparent portions that allow external light to pass through. For example, in a transparent OLED display device, transparent portions can be provided in the non-emissive regions between each adjacent pixel. In another example, a transparent OLED lighting panel can be formed by providing multiple transparent regions between the emitting regions of the panel. Transparent or semi-transparent OLED devices can be bottom-emitting, top-emitting, or double-sided emitting devices.

[0011] While either the cathode or anode can be chosen as the transmission electrode, typical top-emitting devices include a transparent cathode. Materials commonly used to form the transmission cathode include transparent conductive oxides (TCOs), such as indium tin oxide (ITO) and zinc oxide (ZnO), and thin films, such as those formed by depositing thin layers of silver (Ag), aluminum (Al), or various metal alloys, such as magnesium silver (Mg:Ag) alloys and ytterbium silver (Yb:Ag) alloys, with a volume composition of approximately 1:9 to approximately 9:1. Multilayer cathodes comprising two or more layers of TCO and / or metal thin films can also be used.

[0012] Especially in the case of thin films, a relatively thin layer thickness of at most a few tens of nanometers helps to achieve improved transparency and favorable optical properties (e.g., reduced microcavity effects) for use in OLEDs. However, the reduction in the thickness of the transmission electrode is accompanied by an increase in its sheet resistance. Electrodes with high sheet resistance are generally undesirable for use in OLEDs because they generate a large current-resistance (IR) drop during device operation, which is detrimental to the performance and efficiency of the OLED. The IR drop can be compensated to some extent by increasing the power supply level; however, when the power supply level of a pixel is increased, the voltage supplied to other components also increases to maintain normal device operation, which is therefore disadvantageous.

[0013] To reduce the power specifications of top-emitting OLED devices, solutions have been proposed to form bus structures or auxiliary electrodes on the device. For example, such auxiliary electrodes can be formed by depositing a conductive coating electrically connected to the transmission electrodes of the OLED device. These auxiliary electrodes can reduce the sheet resistance and associated IR drop of the transmission electrodes, allowing current to be carried more efficiently to various areas of the device.

[0014] Since auxiliary electrodes are typically positioned on top of an OLED stack comprising an anode, one or more organic layers, and a cathode, shadow masks with mask apertures have traditionally been used to pattern the auxiliary electrodes, for example, by selectively depositing conductive coatings through the mask apertures via a physical vapor deposition (PVD) process. However, because these masks are typically metallic, they tend to warp during high-temperature deposition, deforming the mask apertures and the resulting deposited pattern. Furthermore, masks often degrade with successive depositions because the conductive coating adheres to them and obscures their features. Therefore, cleaning such masks requires time-consuming and expensive processes, or they must be disposed of once it is deemed ineffective in producing the desired pattern, making the process costly and complex. Consequently, shadow mask processes may be commercially unfeasible for large-scale OLED device production. Moreover, the aspect ratio of features that can be produced using shadow mask processes is often limited due to shading effects and the mechanical (e.g., tensile) strength of metallic masks, as large metallic masks are typically stretched during the shadow mask deposition process.

[0015] Another challenge in patterning conductive coatings onto a surface using a shadow mask is that some, but not all, patterns can be achieved using a single mask. Because each section of the mask is physically supported, not all patterns are possible in a single processing stage. For example, when the pattern specifies isolation features, a single mask processing stage is often not sufficient to obtain the desired pattern. Additionally, masks used to generate repeating structures (e.g., busbar structures or auxiliary electrodes) across the entire surface of a device involve forming numerous perforations or holes in the mask. However, forming numerous holes in a mask compromises its structural integrity, leading to significant warping or deformation during processing, which in turn distorts the pattern of the deposited structure.

[0016] In addition to the above, when a common electrode with a substantially uniform thickness is provided as the top emitting cathode in an OLED display device, it is not easy to fine-tune the optical performance of the device according to the emission spectrum associated with each sub-pixel. In a typical OLED display device, red, green, and blue sub-pixels are provided to form the pixels of the display device. The top emitting electrode used in such an OLED display device is typically a common electrode coated on multiple pixels. For example, this common electrode can be a relatively thin conductive layer with a substantially uniform thickness throughout the device. Although efforts have been made to tune the optical microcavity effect associated with the color of each sub-pixel by varying the thickness of the organic layers disposed within different sub-pixels, this approach may not provide a sufficient degree of tuning of the optical microcavity effect in at least some cases. Furthermore, this approach may be difficult to implement in an OLED display manufacturing environment. Attached Figure Description

[0017] Some embodiments will now be described by way of example with reference to the accompanying drawings.

[0018] Figure 1 This is a schematic diagram illustrating the deposition of a nucleation inhibition coating according to one embodiment using a shadow mask.

[0019] Figure 2A , Figure 2B and Figure 2C This is a schematic diagram illustrating a microcontact transfer printing process for a nucleation inhibition coating according to one embodiment.

[0020] Figure 3 This is a schematic diagram illustrating the deposition of a conductive coating on a patterned surface according to one embodiment.

[0021] Figure 4 This is a diagram illustrating an apparatus produced according to one embodiment of the process.

[0022] Figures 5A-5C This is a schematic diagram illustrating a process for selectively depositing a conductive coating according to one embodiment.

[0023] Figure 5D-5F This is a schematic diagram illustrating a process for selectively depositing a conductive coating according to another embodiment.

[0024] Figure 6 This is a diagram illustrating an electroluminescent device according to one embodiment.

[0025] Figure 7 This is a flowchart illustrating a processing stage according to one embodiment.

[0026] Figure 8A This is a top view showing an open mask based on an instance.

[0027] Figure 8B This is a top view showing an open mask based on another example.

[0028] Figure 8C This is a top view showing the open mask based on yet another instance.

[0029] Figure 8D This is a top view showing the open mask based on yet another instance.

[0030] Figure 9 This is a top view of an OLED device according to one embodiment.

[0031] Figure 10 yes Figure 14 A cross-sectional view of an OLED device.

[0032] Figure 11 This is a cross-sectional view of an OLED device according to another embodiment.

[0033] Figure 12A This is a schematic diagram showing a top view of a passive matrix OLED device according to one embodiment.

[0034] Figure 12B yes Figure 17 A schematic cross-sectional view of a passive matrix OLED device.

[0035] Figure 12C yes Figure 17 A schematic cross-sectional view of the passive matrix OLED device B after encapsulation.

[0036] Figure 12D This is a schematic cross-sectional view of a comparative passive matrix OLED device.

[0037] Figures 13A-13D A portion of the auxiliary electrode according to various embodiments is shown.

[0038] Figure 14 An auxiliary electrode pattern formed on an OLED device according to one embodiment is shown.

[0039] Figure 15 A portion of an apparatus having a pixel arrangement is shown according to one embodiment.

[0040] Figure 16 It is based on Figure 15 The cross-sectional view of the device taken along line AA.

[0041] Figure 17 It is based on Figure 15 A cross-sectional view of the device taken along line BB.

[0042] Figure 18 This is a diagram showing the cross-sectional profile around the interface between the conductive coating and the nucleation inhibition coating according to one embodiment.

[0043] Figure 19 This is a diagram showing the cross-sectional profile around the interface between the conductive coating and the nucleation inhibition coating according to another embodiment.

[0044] Figure 20A This is a diagram showing the cross-sectional profile around the interface of the conductive coating, the nucleation inhibiting coating, and the nucleation promoting coating according to one embodiment.

[0045] Figure 20B This is a diagram showing the cross-sectional profile around the interface of the conductive coating, the nucleation inhibiting coating, and the nucleation promoting coating according to another embodiment.

[0046] Figure 21 This is a diagram showing the cross-sectional profile around the interface between the conductive coating and the nucleation inhibition coating according to yet another embodiment.

[0047] Figure 22A This is a diagram showing the cross-sectional profile near the interface between the conductive coating and the nucleation inhibition coating according to yet another embodiment.

[0048] Figure 22B This is a diagram showing the cross-sectional profile near the interface between the conductive coating and the nucleation inhibition coating according to yet another embodiment.

[0049] Figure 22C This is a diagram showing the cross-sectional profile near the interface between the conductive coating and the nucleation inhibition coating according to yet another embodiment.

[0050] Figure 22D This is a diagram showing the cross-sectional profile near the interface between the conductive coating and the nucleation inhibition coating according to yet another embodiment.

[0051] Figure 23A and 23B A method for removing a nucleation inhibition coating after depositing a conductive coating is shown according to one embodiment.

[0052] Figure 24 This is a diagram showing the cross-sectional profile of an active matrix OLED device according to one embodiment.

[0053] Figure 25 This is a diagram showing the cross-sectional profile of an active-matrix OLED device according to another embodiment.

[0054] Figure 26 This is a diagram showing the cross-sectional profile of an active-matrix OLED device according to yet another embodiment.

[0055] Figure 27 This is a diagram showing the cross-sectional profile of an active-matrix OLED device according to yet another embodiment.

[0056] Figure 28A This is a diagram illustrating a transparent active-matrix OLED device according to one embodiment.

[0057] Figure 28B It shows the basis Figure 28A A diagram showing the cross-sectional profile of the device.

[0058] Figure 29A This is a diagram illustrating a transparent active-matrix OLED device according to one embodiment.

[0059] Figure 29B It shows the basis Figure 29A A cross-sectional profile of the device in one embodiment.

[0060] Figure 29B It shows the basis Figure 29AA diagram showing the cross-sectional profile of the device in another embodiment.

[0061] Figure 30 This is a flowchart illustrating the stages of a manufacturing apparatus according to one embodiment.

[0062] Figures 31A-31D It shows the basis Figure 30 A schematic diagram of the various stages of device manufacturing in an embodiment of the invention.

[0063] Figure 32 This is a schematic diagram showing a cross-section of an AMOLED device according to yet another embodiment.

[0064] Figure 33 This is a schematic diagram showing a cross-section of an AMOLED device according to yet another embodiment.

[0065] Figure 34 This is a schematic diagram showing a cross-section of an AMOLED device according to yet another embodiment.

[0066] Figure 35 This is a schematic diagram showing a cross-section of an AMOLED device according to yet another embodiment.

[0067] Figure 36 This is a schematic diagram showing the cross-sectional profile of an AMOLED device according to one embodiment.

[0068] Figure 37 This is a schematic diagram illustrating the formation of the membrane core.

[0069] Figure 38 This is a schematic diagram showing the relative energy states of the adsorbed atoms.

[0070] Figure 39 This is a schematic diagram illustrating various events considered in the instance simulation model. Detailed Implementation

[0071] It should be understood that, for the sake of simplicity and clarity of illustration, reference numerals may be repeated between figures where deemed appropriate to indicate corresponding or similar components. Furthermore, numerous specific details are set forth to provide a thorough understanding of the exemplary embodiments described herein. However, those skilled in the art will understand that the exemplary embodiments described herein can be practiced without some of those specific details. In other instances, certain methods, procedures, and components have not been described in detail so as not to obscure the exemplary embodiments described herein.

[0072] In one aspect, according to some embodiments, a method for depositing a conductive coating on a surface is provided. In some embodiments, the method is performed in the context of a method for manufacturing an optoelectronic device. In some embodiments, the method is performed in the context of a method for manufacturing another device. In some embodiments, the method includes depositing a nucleation inhibition coating on a first region of a substrate to produce a patterned substrate. The patterned substrate includes a first region covered by the nucleation inhibition coating and a second region of the substrate exposed from the nucleation inhibition coating, or substantially without the nucleation inhibition coating or substantially not covered by the nucleation inhibition coating. The method further includes processing the patterned substrate to deposit a conductive coating on the second region of the substrate. In some embodiments, the material of the conductive coating includes magnesium. In some embodiments, processing the patterned substrate includes processing the nucleation inhibition coating and the second region of the substrate to deposit the conductive coating on the second region of the substrate, wherein the nucleation inhibition coating remains exposed to the conductive coating, or substantially without the conductive coating or substantially not covered by the conductive coating. In some embodiments, processing the patterned substrate includes evaporating or sublimating a source material for forming the conductive coating, and exposing both the nucleation inhibition coating and the second region of the substrate to the evaporated source material.

[0073] As used herein, the term "nucleation inhibition" refers to a coating or material layer having a surface exhibiting a relatively low affinity for the deposition of conductive materials, thus inhibiting the deposition of conductive materials on the surface, while the term "nucleation promotion" refers to a coating or material layer having a surface exhibiting a relatively high affinity for the deposition of conductive materials, thus promoting the deposition of conductive materials on the surface. One measure of the nucleation inhibition or nucleation promotion characteristics of a surface is the initial adhesion probability of the surface to a conductive material (e.g., magnesium). For example, a magnesium nucleation inhibition coating could refer to a coating having a surface exhibiting a relatively low initial adhesion probability to magnesium vapor, thereby inhibiting magnesium deposition on the surface, while a magnesium nucleation promotion coating could refer to a coating having a surface exhibiting a relatively high initial adhesion probability to magnesium vapor, thereby promoting magnesium deposition on the surface. As used herein, the terms "adhesion probability" and "adhesion coefficient" are used interchangeably. Another measure of the nucleation inhibition or nucleation promotion characteristics of a surface is the initial deposition rate of a conductive material (e.g., magnesium) on one surface relative to the initial deposition rate of the conductive material on another (reference) surface, where both surfaces are subjected to or exposed to the evaporation flux of the conductive material.

[0074] As used herein, the terms “evaporation” and “sublimation” are used interchangeably to refer to deposition processes in which source material is converted into vapor (e.g., by heating) to be deposited onto a target surface, for example, in a solid state.

[0075] As used herein, a surface (or a specific area of ​​a surface) that is “substantially free” or “substantially uncovered” by material means that the material is substantially absent from the surface (or a specific area of ​​the surface). Specifically, regarding conductive coatings, one measure of the amount of conductive material on a surface is transmittance, because conductive materials, such as metals including magnesium, attenuate and / or absorb light. Therefore, if the transmittance in the visible portion of the electromagnetic spectrum is greater than 90%, greater than 92%, greater than 95%, or greater than 98%, the surface can be considered substantially free of conductive material. Another measure of the amount of material on a surface is the percentage of material coverage on the surface; for example, if the percentage of material coverage is not greater than 10%, not greater than 8%, not greater than 5%, not greater than 3%, or not greater than 1%, the surface can be considered substantially free of the material. Surface coverage can be assessed using imaging techniques such as transmission electron microscopy, atomic force microscopy, or scanning electron microscopy.

[0076] Selective deposition

[0077] Figure 1 This is a schematic diagram illustrating the process of depositing a nucleation inhibition coating 140 onto the surface 102 of a substrate 100 according to one embodiment. Figure 1 In this embodiment, a source 120 comprising source material is heated under vacuum to evaporate or sublimate the source material. The source material comprises or is substantially composed of material for forming the nucleation inhibition coating 140. The evaporated source material then travels toward the substrate 100 in the direction indicated by arrow 122. A shadow mask 110 having an aperture or slit 112 is disposed in the path of the evaporated source material such that a portion of the flux through the aperture 112 is selectively incident on a region of the surface 102 of the substrate 100, thereby forming the nucleation inhibition coating 140 thereon.

[0078] Figure 2A-2C A microcontact transfer printing process for depositing a nucleation inhibition coating on the surface of a substrate is illustrated in one embodiment. Similar to the shadow mask process, the microcontact printing process can be used to selectively deposit a nucleation inhibition coating on a region of the substrate surface.

[0079] Figure 2A The first stage of a microcontact transfer printing process is illustrated, which includes a mold 210 for protrusion 212 providing a nucleation inhibition coating 240 on the surface of protrusion 212. As those skilled in the art will understand, various suitable processes can be used to deposit the nucleation inhibition coating 240 on the surface of protrusion 212.

[0080] like Figure 2BAs shown, the mold 210 is then brought close to the substrate 100, so that the nucleation inhibition coating 240 deposited on the surface of the protrusion 212 comes into contact with the surface 102 of the substrate 100. When the nucleation inhibition coating 240 contacts the surface 102, the nucleation inhibition coating 240 adheres to the surface 102 of the substrate 100.

[0081] Therefore, as Figure 2C As shown, when the mold 210 moves away from the substrate 100, the nucleation inhibition coating 240 is effectively transferred to the surface 102 of the substrate 100.

[0082] Once the nucleation inhibition coating has been deposited on the areas of the substrate surface, a conductive coating can be deposited on the remaining uncovered areas of the surface where the nucleation inhibition coating is not present. Go to Figure 3 The conductive coating source 410 is shown as guiding the evaporated conductive material to the surface 102 of the substrate 100. For example... Figure 3 As shown, the conductive coating source 410 can guide the evaporated conductive material to be incident on both covered or treated areas of surface 102 (i.e., areas on surface 102 where the nucleation inhibition coating 140 is deposited) and uncovered or untreated areas. However, since the surface of the nucleation inhibition coating 140 exhibits a relatively low initial adhesion coefficient compared to the uncovered surface 102 of the substrate 100, the conductive coating 440 selectively deposits on areas of surface 102 where the nucleation inhibition coating 140 is not present. For example, the initial deposition rate of the evaporated conductive material on the uncovered areas of surface 102 can be at least or greater than about 80 times, at least or greater than about 100 times, at least or greater than about 200 times, at least or greater than about 500 times, at least or greater than about 700 times, at least or greater than about 1000 times, at least or greater than about 1500 times, at least or greater than about 1700 times, or at least or greater than about 2000 times. The conductive coating 440 may include, for example, pure or substantially pure magnesium.

[0083] It should be understood that although shadow mask patterning and microcontact transfer printing processes have been illustrated and described above, other processes can also be used to selectively pattern substrates by depositing nucleation inhibition materials. Various additive and subtractive processes for surface patterning can be used to selectively deposit nucleation inhibition coatings. Examples of such processes include, but are not limited to, photolithography, printing (including ink or vapor jet printing and roll-to-roll printing), organic vapor deposition (OVPD), and laser-induced thermal imaging (LITI) patterning, as well as combinations thereof.

[0084] In some applications, it may be desirable to deposit a conductive coating with specific material properties onto a substrate surface that is not readily depositable with conductive coatings. For example, due to the low adhesion coefficient of magnesium to some organic surfaces, pure or substantially pure magnesium is typically not easily deposited onto some organic surfaces. Therefore, in some embodiments, the substrate surface is further treated by depositing a nucleation-promoting coating on it prior to depositing the conductive coating.

[0085] Based on findings and experimental observations, it is hypothesized that fullerenes and other nucleation promoters, as will be further explained herein, act as nucleation sites for the deposition of conductive coatings, including magnesium. For example, in the case of magnesium deposition on a fullerene-treated surface using an evaporation process, the fullerene molecules act as nucleation sites, promoting the formation of stable nuclei for magnesium deposition. In some cases, less than a monolayer of fullerene or other nucleation promoter can be provided on the treated surface to act as nucleation sites for magnesium deposition. As will be understood, treating a surface by depositing several monolayers of nucleation promoter may result in more nucleation sites, leading to a higher initial adhesion probability. Other examples of nucleation promoters include, but are not limited to, metals such as Ag and Yb, and metal oxides such as ITO and IZO.

[0086] It should also be understood that the amount of fullerene or other material deposited on a surface can be more or less than a single monolayer. For example, a surface can be treated by depositing 0.1 monolayers, 1 monolayer, 10 monolayers, or more of nucleation promoting or inhibiting material. As used herein, depositing 1 monolayer of material refers to the amount of material covering a desired area of ​​the surface with a monolayer of the constituent molecules or atoms of the material. Similarly, as used herein, depositing 0.1 monolayer of material refers to the amount of material covering 10% of the desired area of ​​the surface with a monolayer of the constituent molecules or atoms of the material. Due to, for example, the possible stacking or aggregation of molecules or atoms, the actual thickness of the deposited material may be uneven. For example, depositing 1 monolayer of material may result in some areas of the surface being uncovered by the material, while other areas of the surface may have multiple atomic or molecular layers deposited thereon. In some embodiments, the thickness of the nucleation promoting coating may be between about 1 nm and about 5 nm, or between about 1 nm and about 3 nm.

[0087] As used herein, the term "fullerene" refers to a material comprising carbon molecules. Examples of fullerene molecules include carbon cage molecules with a three-dimensional framework comprising multiple carbon atoms forming a closed shell, and whose shape can be spherical or hemispherical. Fullerene molecules can be specified as C n , where n is an integer corresponding to the number of carbon atoms in the carbon skeleton of the fullerene molecule. Examples of fullerene molecules include C n Where n is in the range of 50 to 250, for example, C 60 C 70C 72 C 74 C 76 C 78 C 80 C 82 and C 84 Other examples of fullerene molecules include tubular or cylindrical carbon molecules, such as single-walled carbon nanotubes and multi-walled carbon nanotubes.

[0088] Figure 4 An embodiment of an apparatus for depositing a nucleation-promoting coating 160 prior to the deposition of a conductive coating 440 is shown. For example... Figure 4 As shown, the nucleation promoting coating 160 is deposited on an area of ​​the substrate 100 not covered by the nucleation inhibiting coating 140. Therefore, when the conductive coating 440 is deposited, the conductive coating 440 preferentially forms on the nucleation promoting coating 160. For example, the initial deposition rate of the material of the conductive coating 440 on the surface of the nucleation promoting coating 160 can be at least or greater than about 80 times, at least or greater than about 100 times, at least or greater than about 200 times, at least or greater than about 500 times, at least or greater than about 700 times, at least or greater than about 1000 times, at least or greater than about 1500 times, at least or greater than about 1700 times, or at least or greater than about 2000 times. Typically, the nucleation promoting coating 160 can be deposited on the substrate 100 before or after the deposition of the nucleation inhibiting coating 140. Nucleation-promoting coatings 160 can be deposited using a variety of processes that selectively deposit materials on a surface, including but not limited to evaporation (including thermal evaporation and electron beam evaporation), photolithography, printing (including ink or vapor jet printing, roll-to-roll printing and microcontact transfer printing), OVPD, LITI patterning, and combinations thereof.

[0089] Figures 5A-5C The process of depositing a conductive coating onto a substrate surface is illustrated in one embodiment.

[0090] exist Figure 5A In this embodiment, the substrate 100 is treated by depositing a nucleation inhibition coating 140 on its surface 102. Specifically, in the illustrated embodiment, deposition is achieved by evaporating source material within a source 120 and guiding the evaporated source material toward the surface 102 to which it is to be deposited. The general direction of the evaporation flux toward the surface 102 is indicated by arrow 122. As shown, the deposition of the nucleation inhibition coating 140 can be performed using an open mask or without a mask, such that the nucleation inhibition coating 140 substantially covers the entire surface 102 to produce a treated surface 142. Alternatively, the nucleation inhibition coating 140 can be selectively deposited onto regions of the surface 102 using, for example, the selective deposition technique described above.

[0091] Although the nucleation inhibition coating 140 is illustrated as being deposited by evaporation, it should be understood that other deposition and surface coating techniques may be used, including but not limited to spin coating, dip coating, printing, spraying, OVPD, LITI patterning, physical vapor deposition (PVD) (including sputtering), chemical vapor deposition (CVD), and combinations thereof.

[0092] exist Figure 5B In this process, a shaded mask 110 is used to selectively deposit a nucleation-promoting coating 160 on the treated surface 142. As shown, evaporated source material traveling from source 120 is guided to substrate 100 through mask 110. The mask includes apertures or slits 112 such that a portion of the evaporated source material incident on mask 110 is prevented from traveling through mask 110, while another portion is guided through the apertures 112 of mask 110. The evaporated source material is selectively deposited onto the treated surface 142 to form the nucleation-promoting coating 160. Thus, after the deposition of the nucleation-promoting coating 160 is completed, a patterned surface 144 is produced.

[0093] Figure 5C The stage of depositing a conductive coating 440 onto a patterned surface 144 is illustrated. The conductive coating 440 may comprise, for example, pure or substantially pure magnesium. As will be explained further below, the material of the conductive coating 440 exhibits a relatively low initial adhesion coefficient relative to the nucleation inhibition coating 140 and a relatively high initial adhesion coefficient relative to the nucleation promotion coating 160. Therefore, deposition can be performed using an open mask or without a mask to selectively deposit the conductive coating 440 onto regions of the substrate 100 where the nucleation promotion coating 160 is present. Figure 5C As shown, it can largely or substantially prevent the evaporation material of the conductive coating 440 incident on the surface of the nucleation inhibition coating 140 from depositing onto the nucleation inhibition coating 140.

[0094] Figure 5D-5F The process of depositing a conductive coating onto a substrate surface is shown in another embodiment.

[0095] exist Figure 5D In this process, a nucleation-promoting coating 160 is deposited on the surface 102 of the substrate 100. For example, the nucleation-promoting coating 160 can be deposited by thermal evaporation using an open mask or without a mask. Alternatively, other deposition and surface coating techniques can be used, including but not limited to spin coating, dip coating, printing, spraying, OVPD, LITI patterning, PVD (including sputtering), CVD, and combinations thereof.

[0096] exist Figure 5EIn this process, a nucleation inhibition coating 140 is selectively deposited on the region of the nucleation promotion coating 160 using a shadow mask 110. Therefore, after the deposition of the nucleation inhibition coating 140 is completed, a patterned surface is produced. Then... Figure 5F In this process, an open mask or maskless deposition process is used to deposit a conductive coating 440 onto a patterned surface, thereby forming the conductive coating 440 on the exposed areas of the nucleation-promoting coating 160.

[0097] In the foregoing embodiments, it should be understood that the conductive coating 440 formed by the process can be used as an electrode or conductive structure of an electronic device. For example, the conductive coating 440 can be an anode or cathode of an organic optoelectronic device (e.g., an OLED device or an organic photovoltaic (OPV) device). Alternatively, the conductive coating 440 can also be used as an electrode of an optoelectronic device that includes quantum dots as the active layer material. For example, such a device can include an active layer disposed between a pair of electrodes, wherein the active layer includes quantum dots. The device can be, for example, an electroluminescent quantum dot display device, in which light is emitted from the quantum dot active layer due to the current supplied by the electrodes. The conductive coating 440 can also be a bus or auxiliary electrode for any of the foregoing devices.

[0098] Therefore, it should be understood that the substrate 100, on which various coatings are deposited, may include one or more additional organic and / or inorganic layers not specifically shown or described in the foregoing embodiments. For example, in the case of an OLED device, the substrate 100 may include one or more electrodes (e.g., anodes and / or cathodes), charge injection and / or transport layers, and an electroluminescent layer. The substrate 100 may further include one or more transistors and other electronic components, such as resistors and capacitors, which are included in an active-matrix or passive-matrix OLED device. For example, the substrate 100 may include one or more top-gate thin-film transistors (TFTs), one or more bottom-gate TFTs, and / or other TFT structures. The TFTs may be n-type TFTs or p-type TFTs. Examples of TFT structures include those comprising amorphous silicon (a-Si), indium gallium zinc oxide (IGZO), and low-temperature polycrystalline silicon (LTPS).

[0099] Substrate 100 may also include a base substrate for supporting the aforementioned additional organic and / or inorganic layers. For example, the base substrate may be a flexible or rigid substrate. The base substrate may include, for example, silicon, glass, metal, polymer (e.g., polyimide), sapphire, or other materials suitable for use as a base substrate.

[0100] Surface 102 of substrate 100 can be an organic or inorganic surface. For example, if conductive coating 440 is used as a cathode in an OLED device, surface 102 can be the top surface of an organic layer stack (e.g., the surface of an electron injection layer). In another example, if conductive coating 440 is used as an auxiliary electrode in a top-emitting OLED device, surface 102 can be the top surface of an electrode (e.g., a conventional cathode). Alternatively, such an auxiliary electrode can be formed directly below a transmission electrode on top of an organic layer stack.

[0101] Figure 6 An electroluminescent (EL) device 600 according to one embodiment is illustrated. The EL device 600 may be, for example, an OLED device or an electroluminescent quantum dot device. In one embodiment, device 600 is an OLED device, which includes a substrate 616, an anode 614, a semiconductor layer 630, and a cathode 602. In the illustrated embodiment, semiconductor layer 630 includes a hole injection layer 612, a hole transport layer 610, an electroluminescent layer 608, an electron transport layer 606, and an electron injection layer 604. Since semiconductor layer 630 in an OLED device typically comprises an organic semiconductor material, semiconductor layer 630 may be interchangeably referred to herein as an organic layer.

[0102] The hole injection layer 612 can be formed using a hole injection material that typically facilitates hole injection into the anode 614. The hole transport layer 610 can be formed using a hole transport material that typically exhibits high hole mobility.

[0103] The electroluminescent layer 608 can be formed, for example, by doping the host material with an emitter material. The emitter material can be, for example, a fluorescent emitter, a phosphorescent emitter, or a TADF emitter. Various emitter materials can also be doped into the host material to form the electroluminescent layer 608.

[0104] The electron transport layer 606 can be formed using an electron transport material that typically exhibits high electron mobility. The electron injection layer 604 can be formed using an electron injection material that is typically used to facilitate electron injection into the cathode 602.

[0105] It should be understood that the structure of device 600 can be modified by omitting or combining one or more layers. Specifically, one or more of the hole injection layer 612, hole transport layer 610, electron transport layer 606, and electron injection layer 604 can be omitted from the device structure. One or more additional layers may also be present in the device structure. Such additional layers include, for example, hole blocking layers, electron blocking layers, and additional charge transport and / or injection layers. Each layer may further include any number of sublayers, and each layer and / or sublayer may include various mixtures and compositional gradients. It should also be understood that device 600 may include one or more layers containing inorganic and / or organometallic materials, and is not limited to devices composed solely of organic materials. For example, device 600 may include quantum dots.

[0106] Device 600 can be connected to power supply 620 for supplying current to device 600.

[0107] In another embodiment of device 600, which is an EL quantum dot device, the EL layer 608 typically includes quantum dots that emit light when an electric current is supplied.

[0108] Figure 7 This is a flowchart outlining the stages of manufacturing an OLED device according to one embodiment. In stage 704, an organic layer is deposited on a target surface. For example, the target surface may be the surface of an anode already deposited on top of a substrate, which may include, for example, glass, a polymer, and / or a metal foil. As described above, the organic layer may include, for example, a hole injection layer, a hole transport layer, an electroluminescent layer, an electron transport layer, and an electron injection layer. Then, in stage 706, a nucleation inhibition coating is deposited on top of the organic layer using a selective deposition or patterning process. In stage 708, a nucleation promotion coating is selectively deposited on the nucleation inhibition coating to create a patterned surface. For example, the nucleation promotion coating and the nucleation inhibition coating can be selectively deposited by evaporation using a mask, microcontact transfer printing process, photolithography, printing (including ink or vapor jet printing and roll-to-roll printing), OVPD, or LITI patterning. Then, in stage 710, a conductive coating is deposited on the patterned surface using an open mask or maskless deposition process. The conductive coating may serve as a cathode or another conductive structure of the OLED device.

[0109] In another embodiment, the deposition of the nucleation inhibition coating in stage 706 may be performed using an open mask or without a mask. In yet another embodiment, the deposition of the nucleation promotion coating in step 708 may be performed prior to the deposition of the nucleation inhibition coating in step 706. In yet another embodiment, the deposition of the nucleation promotion coating in step 708 may be performed using an open mask or without a mask prior to the selective deposition of the nucleation inhibition coating in step 706.

[0110] For simplicity and clarity, details of the deposited material, including thickness profiles and edge profiles, have been omitted from the process drawings.

[0111] According to the above embodiments, conductive coatings can be selectively deposited on target areas using open mask or maskless deposition processes by using nucleation inhibition coatings or a combination of nucleation inhibition coatings and nucleation promotion coatings.

[0112] It should also be understood that open masks used to deposit any of a variety of layers or coatings, including conductive coatings, nucleation-inhibiting coatings, and nucleation-promoting coatings, can “mask” or prevent material deposition on certain areas of the substrate. However, unlike fine metal masks (FMMs) used to form relatively small features with feature sizes of about tens of micrometers or smaller, the feature size of an open mask is typically comparable to the size of the OLED device being manufactured. For example, an open mask can mask the edges of a display device during manufacturing, resulting in an open mask with holes that roughly correspond to the size of the display device (e.g., about 1 inch for microdisplays, about 4-6 inches for mobile displays, about 8-17 inches for laptop or tablet displays, etc.). For example, the feature size of an open mask can be about 1 cm or larger. Therefore, the size of the holes formed in an open mask is typically determined to surround multiple emission regions or pixels that together form the display device.

[0113] Figure 8A An example of an open mask 1731 having or defining an aperture 1734 formed therein is shown. In the illustrated example, the aperture 1734 of the mask 1731 is smaller than the size of the device 1721, such that when the mask 1731 is covered, the mask 1731 covers the edge of the device 1721. Specifically, in the illustrated embodiment, all or substantially all of the emission areas or pixels 1723 of the device 1721 are exposed through the aperture 1734, while an unexposed region 1727 is formed between the outer edge 1725 of the device 1721 and the aperture 1734. As will be understood, electrical contacts or other device components may be located in the unexposed region 1727, such that these components remain unaffected by the open mask deposition process.

[0114] Figure 8B Another example of an open mask 1731 is shown, wherein the aperture 1734 of the mask 1731 is smaller than... Figure 16 The aperture of B causes the mask 1731 to cover at least some of the emission areas or pixels 1723 of the device 1721 when it is covered. Specifically, the outermost pixel 1723' is shown as being located within the unexposed area 1727 of the device 1721 formed between the aperture 1734 of the mask 1731 and the outer edge 1725 of the device 1721.

[0115] Figure 8CAnother example of an open mask 1731 is shown, wherein the aperture 1734 of the mask 1731 defines a pattern that covers some pixels 1723' while exposing other pixels 1723 of the device 1721. Specifically, pixels 1723' located in the unexposed area 1727 of the device 1721 (formed between the aperture 1734 and the outer edge 1725) are masked during the deposition process to suppress vapor flux incident on the unexposed area 1727.

[0116] Despite Figures 8A-8C The examples have shown that the outermost pixel is masked, but it should be understood that the aperture of an open mask can be shaped to mask other emitting and non-emitting areas of the device. Furthermore, while the open mask has been illustrated in the foregoing examples as having a single aperture, an open mask may also include additional apertures for exposing multiple areas of the substrate or device.

[0117] Figure 8D Another example of an open mask 1731 is shown, wherein the mask 1731 has or defines a plurality of apertures 1734a-1734d. The apertures 1734a-1734d are positioned to selectively expose certain areas of the device 1721 while masking other areas. For example, certain emission areas or pixels 1723 are exposed through the apertures 1734a-d, while other pixels 1723' located within the unexposed area 1727 are masked.

[0118] In the various embodiments described herein, it should be understood that the use of an open mask may be omitted if necessary. Specifically, the open mask deposition process described herein can alternatively be performed without using a mask, thereby exposing the entire target surface.

[0119] At least some of the embodiments described above have been described with reference to various layers or coatings formed using evaporation processes, including nucleation-promoting coatings, nucleation-inhibiting coatings, and conductive coatings. As will be understood, an evaporation process is a PVD process in which one or more source materials are evaporated or sublimated in a low-pressure (e.g., vacuum) environment and deposited on a target surface by desublimation of one or more evaporated source materials. A variety of different evaporation sources can be used to heat the source material; therefore, it should be understood that the source material can be heated in various ways. For example, the source material can be heated by an electric filament, an electron beam, induction heating, or resistance heating. Furthermore, such layers or coatings can be deposited and / or patterned using other suitable processes, including photolithography, printing, OVPD, LITI patterning, and combinations thereof. These processes can also be used in conjunction with shadow masks to achieve various patterns.

[0120] While certain processes have been described with reference to evaporation for the purpose of depositing nucleation-promoting materials, nucleation-inhibiting materials, and conductive coatings, it should be understood that a variety of other processes can be used to deposit these materials. For example, other PVD processes (including sputtering), CVD processes (including plasma-enhanced chemical vapor deposition (PECVD)), or other suitable processes for depositing such materials can be used for deposition. In some embodiments, the conductive coating is deposited by heating the source material used to form the conductive coating using a resistance heater. In other embodiments, the conductive coating source material can be loaded in a heated crucible, a heated boat, a Knudsen cell (e.g., an evaporator source), or any other type of evaporation source.

[0121] The deposition source material for depositing the conductive coating can be a mixture or compound, and in some embodiments, at least one component of the mixture or compound is not deposited on the substrate during the deposition process (or is deposited in a relatively small amount compared to, for example, magnesium). In some embodiments, the source material can be a copper-magnesium (Cu-Mg) mixture or a Cu-Mg compound. In some embodiments, the source material for the magnesium deposition source includes magnesium and a material having a lower vapor pressure than magnesium, such as Cu. In other embodiments, the source material for the magnesium deposition source is substantially pure magnesium. Specifically, substantially pure magnesium can exhibit substantially similar properties (e.g., initial adhesion probability on the coating in inhibiting and promoting nucleation) compared to pure magnesium (magnesium of 99.99% purity and above). For example, the initial adhesion probability of substantially pure magnesium on a nucleation-inhibiting coating can be within ±10% or ±5% of the initial adhesion probability of 99.99% pure magnesium on a nucleation-inhibiting coating. The purity of magnesium can be about 95% or higher, about 98% or higher, about 99% or higher, or about 99.9% or higher. The deposition source material used for depositing conductive coatings may include other metals that replace magnesium or are combined with magnesium. For example, the source material may include high vapor pressure materials such as ytterbium (Yb), cadmium (Cd), zinc (Zn), or any combination thereof.

[0122] Furthermore, it should be understood that the processes of various embodiments can be performed on the surfaces of various other organic or inorganic materials used as electron injection layers, electron transport layers, electroluminescent layers, and / or pixel definition layers (PDLs) in organic optoelectronic devices. Examples of such materials include organic molecules and organic polymers, such as those described in PCT Publication No. WO 2012 / 016074. Those skilled in the art will also understand that organic materials doped with various elements and / or inorganic compounds can still be considered organic materials. Those skilled in the art will also understand that a wide variety of organic materials can be used, and the processes described herein are generally applicable to a broad range of such organic materials.

[0123] It should also be understood that inorganic substrates or surfaces can refer to substrates or surfaces that primarily comprise inorganic materials. For clarity, inorganic materials are generally understood to be any material that is not considered an organic material. Examples of inorganic materials include metals, glasses, and minerals. Specifically, conductive coatings comprising magnesium can be deposited on surfaces of lithium fluoride (LiF), glass, and silicon (Si) using the processes according to this disclosure. Other surfaces on which the processes according to this disclosure can be applied include surfaces of silicon- or silicone-based polymers, inorganic semiconductor materials, electron injection materials, salts, metals, and metal oxides.

[0124] It should be understood that the substrate may include a semiconductor material, and therefore, the surface of such a substrate may be a semiconductor surface. Semiconductor materials can be described as materials that typically exhibit a band gap. For example, such a band gap can be formed between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO). Therefore, semiconductor materials typically have a conductivity lower than that of conductive materials (e.g., metals) but greater than that of insulating materials (e.g., glass). It should be understood that semiconductor materials can be organic or inorganic semiconductor materials.

[0125] Selective deposition of electrodes

[0126] Figure 9 and 10 An OLED device 1500 according to one embodiment is shown. Specifically, Figure 9 A top view of the OLED device 1500 is shown, while Figure 10 A cross-sectional view of the structure of the OLED device 1500 is shown. Figure 9 In the diagram, the cathode 1550 is shown as a single integral or continuous structure having or defining a plurality of holes or cavities 1560 formed therein, these holes or cavities corresponding to areas of the device 1500 where no cathode material is deposited. This is in Figure 10The figure further illustrates an OLED device 1500, which includes a substrate 1510, an anode 1520, an organic layer 1530, a nucleation promoting coating 1540, a nucleation inhibiting coating 1570 selectively deposited on certain areas of the nucleation promoting coating 1540, and a cathode 1550 deposited on other areas of the nucleation promoting coating 1540 where the nucleation inhibiting coating 1570 is absent. More specifically, cathode material is selectively deposited on exposed areas of the surface of the nucleation promoting coating 1540 using an open-mask or maskless deposition process by selectively depositing the nucleation inhibiting coating 1570 to cover certain areas of the surface of the nucleation promoting coating 1540 during the fabrication of the device 1500. The transparency or transmittance of the OLED device 1500 can be adjusted or modified by changing various parameters of the assigned pattern, such as the average size of the holes 1560 and the density of the holes 1560 formed in the cathode 1550. Therefore, the OLED device 1500 can be a substantially transparent OLED device, which allows at least a portion of external light incident on the OLED device to be transmitted through. For example, the OLED device 1500 can be a substantially transparent OLED lighting panel. Such an OLED lighting panel can be configured, for example, to emit light in one direction (e.g., toward or away from the substrate 1510) or in both directions (e.g., toward and away from the substrate 1510).

[0127] Figure 11 An OLED device 1600 according to another embodiment is shown, wherein a cathode 1650 substantially covers the entire device area. Specifically, the OLED device 1600 includes a substrate 1610, an anode 1620, an organic layer 1630, a nucleation promoting coating 1640, a cathode 1650, a nucleation inhibiting coating 1660 selectively deposited on certain areas of the cathode 1650, and an auxiliary electrode 1670 deposited on other areas of the cathode 1650 where the nucleation inhibiting coating 1660 is not present.

[0128] The auxiliary electrode 1670 is electrically connected to the cathode 1650. Particularly in top-emitting configurations, it is desirable to deposit a relatively thin layer of the cathode 1650 to reduce optical interference (e.g., attenuation, reflection, diffusion, etc.) caused by the presence of the cathode 1650. However, reducing the thickness of the cathode 1650 typically increases the film resistance of the cathode 1650, thereby reducing the performance and efficiency of the OLED device 1600. By providing the auxiliary electrode 1670 electrically connected to the cathode 1650, the film resistance can be reduced, and thus the IR drop associated with the cathode 1650 can be reduced. Furthermore, by selectively depositing the auxiliary electrode 1670 to cover certain areas of the device region while leaving others uncovered, optical interference caused by the presence of the auxiliary electrode 1670 can be controlled and / or reduced.

[0129] While the advantages of auxiliary electrodes have been illustrated with reference to top-emitting OLED devices, selectively depositing auxiliary electrodes on the cathodes of bottom-emitting or double-sided OLED devices may also be advantageous. For example, although the cathode can be formed as a relatively thick layer in a bottom-emitting OLED device without substantially affecting the optical characteristics of the device, forming a relatively thin cathode may still be advantageous. For example, in transparent or translucent display devices, the layers of the entire device, including the cathode, can be formed as substantially transparent or translucent. Therefore, it may be beneficial to provide a patterned auxiliary electrode that is not easily detectable to the naked eye from typical viewing distances. It should also be understood that the described process can be used to form busbars or auxiliary electrodes to reduce the resistance of electrodes in devices other than the OLED device.

[0130] Figure 12A A patterned cathode 1712 according to one embodiment is shown, wherein the cathode 1712 includes a plurality of spaced-apart elongated conductive strips. For example, the cathode 1712 can be used in a passive matrix OLED device (PMOLED) 1715. In the PMOLED device 1715, emission regions or pixels are typically formed at the regions where the anti-electrodes overlap. Therefore, in Figure 12A In this embodiment, an emitting region or pixel 1751 is formed at the overlapping area of ​​the cathode 1712 and the anode 1741, the anode 1741 comprising a plurality of spaced-apart elongated conductive strips. A non-emitting region 1755 is formed in the non-overlapping area of ​​the cathode 1712 and the anode 1741. Typically, as shown, in the PMOLED device 1715, the strips of the cathode 1712 and the anode 1741 are oriented substantially perpendicular to each other. The cathode 1712 and the anode 1741 can be connected to a power supply and associated drive circuitry to supply current to their respective electrodes.

[0131] Figure 12B It shows along Figure 12A The cross-sectional view taken by line AA in the diagram. Figure 12B The substrate 1702 is provided, which may be, for example, a transparent substrate. Figure 12A As shown, an anode 1741 is provided in a strip form on a substrate 1702. One or more organic layers 1761 are deposited on the anode 1741. For example, the organic layer 1761 may be provided as a common layer throughout the device and may include any number of organic and / or inorganic material layers described herein, such as hole injection and transport layers, electroluminescent layers, and electron transport and injection layers. Certain areas of the top surface of the organic layer 1761 are shown covered by a nucleation inhibition coating 1771, which is used to selectively pattern the cathode 1712 according to the deposition process described above. The cathode 1712 and the anode 1741 may be connected to their respective drive circuits (not shown) that control the emission of light from the pixel 1751.

[0132] While the thicknesses of the nucleation inhibition coating 1771 and the cathode 1712 may vary depending on the desired application and performance, in at least some embodiments, the thickness of the nucleation inhibition coating 1771 may be comparable to, or substantially less than, the thickness of the cathode 1712, such as... Figure 12B As shown. Using a relatively thin nucleation inhibition coating to achieve cathode patterning may be particularly advantageous for flexible PMOLED devices, as it can provide a relatively flat surface on which a blocking coating can be applied.

[0133] Figure 12C It shows Figure 12B The PMOLED device 1715 has a barrier coating 1775 applied to the cathode 1712 and the nucleation inhibition coating 1771. It should be understood that the barrier coating 1775 is typically provided to prevent various device layers, including organic layers and the potentially easily oxidized cathode 1712, from exposure to moisture and ambient air. For example, the barrier coating 1775 may be a thin-film encapsulation formed by printing, CVD, sputtering, atomic layer deposition (ALD), any combination of the foregoing, or by any other suitable method. The barrier coating 1775 may also be provided by laminating a pre-formed barrier film onto the device 1715 using an adhesive (not shown). For example, the barrier coating 1775 may be a multilayer coating comprising organic materials, inorganic materials, or a combination of both. The barrier coating 1775 may further comprise a getter material and / or a desiccant.

[0134] For comparison, in Figure 12D An example of a PMOLED device 1719 is shown for comparison. Figure 12D In a comparative example, multiple pixel-defining structures 1783 are provided in the non-emitting region of device 1719, such that when conductive material is deposited using an open-mask or maskless deposition process, the conductive material is deposited both in the emitting region located between adjacent pixel-defining structures 1783 to form a cathode 1712 and on top of the pixel-defining structures 1783 to form a conductive strip 1718. However, to ensure electrical isolation between each segment of the cathode 1712 and the conductive strip 1718, the thickness or height of the pixel-defining structure 1783 is formed to be greater than the thickness of the cathode 1712. The pixel-defining structure 1783 may also have an undercut profile to further reduce the possibility of electrical contact between the cathode 1712 and the conductive strip 1718. A barrier coating 1775 is provided to cover the PMOLED device 1719 including the cathode 1712, pixel-defining structures 1783, and conductive strip 1718.

[0135] exist Figure 12DIn the comparative PMOLED device 1719 shown, the surface on which the barrier coating 1775 is applied is non-uniform due to the presence of the pixel definition structure 1783. This makes the application of the barrier coating 1775 difficult, and even after application, the adhesion of the barrier coating 1775 to the underlying surface may be relatively poor. Poor adhesion increases the likelihood of the barrier coating 1775 peeling off from the device 1719, especially when the device 1719 is bent or flexed. Furthermore, due to the non-uniform surface, the possibility of cavitation between the barrier coating 1775 and the underlying surface during application is relatively high. The presence of cavitation and / or peeling off of the barrier coating 1775 can lead to defects and partial or complete device failure, which is highly undesirable. Figure 12C In some embodiments, these factors are mitigated or reduced.

[0136] Although Figure 12A The patterned cathode 1712 shown can be used to form the cathode of an OLED device, but it should be understood that similar patterning or selective deposition techniques can be used to form auxiliary electrodes for an OLED device. Specifically, such an OLED device can be provided with a common cathode and auxiliary electrodes deposited on top of or below the common cathode, such that the auxiliary electrodes are electrically connected to the common cathode. For example, such auxiliary electrodes can be implemented in an OLED device (e.g., an AMOLED device) that includes multiple emission regions, such that the auxiliary electrodes are formed over non-emission regions rather than over emission regions. In another example, auxiliary electrodes can be provided to cover the non-emission regions of the OLED device as well as at least some of the emission regions.

[0137] Selective deposition of auxiliary electrodes

[0138] Figure 13A A portion of an OLED device 1800 is depicted, comprising multiple emitting regions 1810a-1810f and a non-emitting region 1820. For example, the OLED device 1800 may be an AMOLED device, and each emitting region 1810a-1810f may correspond to a pixel or sub-pixel of such a device. For simplicity, Figure 13B-13D A portion of the OLED device 1800 is depicted. Specifically, Figure 13B-13D The area surrounding the first emission region 1810a and the second emission region 1810b is shown; the first emission region 1810a and the second emission region 1810b are two adjacent emission regions. Although not explicitly shown, a common cathode may be provided that substantially covers both the emission and non-emission regions of the device 1800.

[0139] exist Figure 13BThe diagram illustrates an auxiliary electrode 1830 according to one embodiment, disposed between two adjacent emitting regions 1810a and 1810b. The auxiliary electrode 1830 is electrically connected to a common cathode (not shown). Specifically, the auxiliary electrode 1830 is shown with a width (α) smaller than the separation distance (d) between the adjacent emitting regions 1810a and 1810b, thereby forming a non-emission gap region on each side of the auxiliary electrode 1830. For example, such an arrangement might be desirable in a device 1800, where the separation distance between the adjacent emitting regions 1810a and 1810b is sufficient to accommodate a sufficiently wide auxiliary electrode 1830, since the possibility of the auxiliary electrode 1830 interfering with the optical output of the device 1800 can be reduced by providing a non-emission gap region. Furthermore, this arrangement may be particularly advantageous when the auxiliary electrode 1830 is relatively thick (e.g., greater than several hundred nanometers or about several micrometers thick). For example, the ratio of the height or thickness of the auxiliary electrode 1830 to its width (i.e., aspect ratio) can be greater than about 0.05, such as about 0.1 or greater, about 0.2 or greater, about 0.5 or greater, about 0.8 or greater, about 1 or greater, or about 2 or greater. For example, the height or thickness of the auxiliary electrode 1830 can be greater than about 50 nm, such as about 80 nm or greater, about 100 nm or greater, about 200 nm or greater, about 500 nm or greater, about 700 nm or greater, about 1000 nm or greater, about 1500 nm or greater, about 1700 nm or greater, or about 2000 nm or greater.

[0140] exist Figure 13C The figure shows an auxiliary electrode 1832 according to another embodiment. The auxiliary electrode 1832 is electrically connected to a common cathode (not shown). As shown, the auxiliary electrode 1832 has a width substantially the same as the separation distance between two adjacent emitting regions 1810a and 1810b, such that the auxiliary electrode 1832 substantially completely occupies the entire non-emitting area provided between the adjacent emitting regions 1810a and 1810b. For example, this arrangement may be desirable when the separation distance between two adjacent emitting regions 1810a and 1810b is relatively small, such as in high pixel density display devices.

[0141] exist Figure 13DThe diagram shows an auxiliary electrode 1834 according to yet another embodiment. The auxiliary electrode 1834 is electrically connected to a common cathode (not shown). The auxiliary electrode 1834 is shown having a width (α) greater than the separation distance (d) between two adjacent emitting regions 1810a and 1810b. Therefore, a portion of the auxiliary electrode 1834 overlaps with a portion of the first emitting region 1810a and a portion of the second emitting region 1810b. This arrangement may be desirable, for example, when the non-emitting area between adjacent emitting regions 1810a and 1810b is insufficient to fully accommodate the auxiliary electrode 1834 of the desired width. Although the auxiliary electrode 1834 is... Figure 13D The auxiliary electrode 1834 is shown overlapping the first emission region 1810a to substantially the same extent as the second emission region 1810b. However, in other embodiments, the degree of overlap between the auxiliary electrode 1834 and adjacent emission regions can be adjusted. For example, in other embodiments, the degree of overlap between the auxiliary electrode 1834 and the first emission region 1810a may be greater than that of the second emission region 1810b, and vice versa. Furthermore, the overlap profile between the auxiliary electrode 1834 and the emission regions can also be modified. For example, the overlapping portion of the auxiliary electrode 1834 may be shaped such that the auxiliary electrode 1834 overlaps with a portion of the emission region to a greater extent than it overlaps with another portion of the same emission region, to produce a non-uniform overlap region.

[0142] Figure 14 An embodiment is shown in which the auxiliary electrode 2530 is formed as a grid above the OLED device 2500. As shown, the auxiliary electrode 2530 is disposed above the non-emitting region 2520 of the device 2500 such that the auxiliary electrode 2530 substantially does not cover any part of the emitting region 2510. For example, the emitting region 2510 may correspond to a pixel or sub-pixel of the OLED device 2500.

[0143] Although the auxiliary electrode has been illustrated as being in Figure 14 In the embodiments, the auxiliary electrodes are formed as connected and continuous structures. However, it should be understood that in some embodiments, the auxiliary electrodes may be provided in the form of discrete auxiliary electrode units, wherein the discrete auxiliary electrode units are not physically connected to each other. However, even in this case, the auxiliary electrode units can still be electrically connected to each other through a common electrode. For example, providing discrete auxiliary electrode units that are indirectly connected to each other through a common electrode can still significantly reduce the sheet resistance, thereby improving the efficiency of the OLED device without substantially affecting the optical characteristics of the device.

[0144] Auxiliary electrodes can be used in display devices with various pixel or subpixel arrangements. For example, auxiliary electrodes can be provided on display devices using a diamond-shaped pixel arrangement. Examples of such pixel arrangements are shown in... Figure 15-17 As shown in the image.

[0145] Figure 15 This is a schematic diagram of an OLED device 2900 with a diamond-shaped pixel arrangement according to one embodiment. The OLED device 2900 includes a plurality of pixel definition layers (PDLs) 2930 and emission regions 2912 (sub-pixels) disposed between adjacent PDLs 2930. The emission regions 2912 include areas corresponding to a first sub-pixel 2912a (which may, for example, correspond to a green sub-pixel), a second sub-pixel 2912b (which may, for example, correspond to a blue sub-pixel), and a third sub-pixel 2912c (which may, for example, correspond to a red sub-pixel).

[0146] Figure 16 It is along Figure 15 The diagram shown is a cut-off line AA of the OLED device 2900. Figure 16 As shown more clearly in the figure, device 2900 includes a substrate 2903 and a plurality of anode units 2921 formed on the surface of substrate 2903. Substrate 2903 may further include a plurality of transistors and substrates, which have been omitted from the figure for simplicity. In the region between adjacent PDLs 2930, an organic layer 2915 is provided on top of each anode unit 2921, and a common cathode 2942 is provided on the organic layer 2915 and PDL 2930 to form a first sub-pixel 2912a. Organic layer 2915 may include a plurality of organic and / or inorganic layers. For example, such layers may include a hole transport layer, a hole injection layer, an electroluminescent layer, an electron injection layer, and / or an electron transport layer. Nucleation inhibition coating 2945 is provided on the region of common cathode 2942 corresponding to the first sub-pixel 2912a so that auxiliary electrode 2951 is selectively deposited on the uncovered region of common cathode 2942 corresponding to the substantially flat region of PDL 2930. The nucleation inhibition coating 2945 can also be used as a refractive index matching coating or an external coupling layer. Optionally, a thin-film encapsulation layer 2961 can be provided to encapsulate the device 2900.

[0147] Figure 17 It shows along Figure 15The diagram shows a schematic of an OLED device 2900, taken from line BB. Device 2900 includes a plurality of anode units 2921 formed on the surface of a substrate 2903, and an organic layer 2916 or 2917 provided on top of each anode unit 2921 in a region between adjacent PDLs 2930. A common cathode 2942 is disposed on the organic layers 2916 and 2917 and the PDLs 2930 to form a second sub-pixel 2912b and a third sub-pixel 2912c, respectively. A nucleation inhibition coating 2945 is provided on the region of the common cathode 2942 corresponding to sub-pixels 2912b and 2912c, so that an auxiliary electrode 2951 is selectively deposited on the uncovered region of the common cathode 2942 corresponding to a substantially flat region of the PDL 2930. The nucleation inhibition coating 2945 can also be used as a refractive index matching coating. A thin-film encapsulation layer 2961 may optionally be provided to encapsulate device 2900.

[0148] In another aspect, according to some embodiments, an apparatus is provided. In some embodiments, the apparatus is an optoelectronic device. In some embodiments, the apparatus is another electronic device or other product. In some embodiments, the apparatus includes a substrate, a nucleation inhibition coating, and a conductive coating. The nucleation inhibition coating covers a first region of the substrate. The conductive coating covers a second region of the substrate and partially overlaps with the nucleation inhibition coating, such that at least a portion of the nucleation inhibition coating is exposed from the conductive coating, or substantially absent or substantially uncovered by the conductive coating. In some embodiments, the conductive coating includes a first portion and a second portion, the first portion of the conductive coating covering the second region of the substrate, and the second portion of the conductive coating overlapping a portion of the nucleation inhibition coating. In some embodiments, the second portion of the conductive coating is spaced apart from the nucleation inhibition coating. In some embodiments, the nucleation inhibition coating comprises an organic material. In some embodiments, the first portion and the second portion of the conductive coating are integral or continuous with each other to provide a single integral structure.

[0149] In another aspect, according to some embodiments, an apparatus is provided. In some embodiments, the apparatus is an optoelectronic device. In some embodiments, the apparatus is another electronic device or other product. In some embodiments, the apparatus includes a substrate and a conductive coating. The substrate includes a first region and a second region. The conductive coating covers the second region of the substrate and partially overlaps with the first region of the substrate, such that at least a portion of the first region of the substrate is exposed from the conductive coating, or substantially without the conductive coating, or substantially not covered by the conductive coating. In some embodiments, the conductive coating includes a first portion and a second portion, the first portion of the conductive coating covering the second region of the substrate, and the second portion of the conductive coating overlapping a portion of the first region of the substrate. In some embodiments, the second portion of the conductive coating is spaced apart from the first region of the substrate. In some embodiments, the first portion and the second portion of the conductive coating are integrally formed with each other.

[0150] Figure 18 A portion of an apparatus according to one embodiment is shown. The apparatus includes a substrate 3410 having a surface 3417. A nucleation inhibition coating 3420 covers a first region 3415 of the surface 3417 of the substrate 3410, and a conductive coating 3430 covers a second region 3412 of the surface 3417 of the substrate 3410. Figure 18 As shown, the first region 3415 and the second region 3412 are different and non-overlapping regions of the surface 3417 of the substrate 3410. The conductive coating 3430 includes a first portion 3432 and a second portion 3434. As shown, the first portion 3432 of the conductive coating 3430 covers the second region 3412 of the substrate 3410, and the second portion 3434 of the conductive coating 3430 partially overlaps with a portion of the nucleation inhibition coating 3420. Specifically, the second portion 3434 is shown to partially overlap with the nucleation inhibition coating 3420 in a direction perpendicular (or orthogonal) to the underlying substrate surface 3417.

[0151] Especially when the nucleation inhibition coating 3420 is formed such that its surface 3422 exhibits a relatively low affinity or initial adhesion probability to the material used to form the conductive coating 3430, a gap 3441 is formed between the overlapping second portion 3434 of the conductive coating 3430 and the surface 3422 of the nucleation inhibition coating 3420. Therefore, the second portion 3434 of the conductive coating 3430 is not in direct physical contact with the nucleation inhibition coating 3420, but is separated from it by the gap 3441 in a direction perpendicular to the surface 3417 of the substrate 3410, as indicated by arrow 3490. Nevertheless, the first portion 3432 of the conductive coating 3430 can be in direct physical contact with the nucleation inhibition coating 3420 at the interface or boundary between the first region 3415 and the second region 3412 of the substrate 3410.

[0152] In some embodiments, the overlapping second portion 3434 of the conductive coating 3430 may extend laterally over the nucleation inhibition coating 3420 to a degree comparable to the thickness of the conductive coating 3430. For example, refer to Figure 18 The width w2 of the second portion 3434 (or the dimension along the direction parallel to the surface 3417 of the substrate 3410) can be comparable to the thickness t1 of the first portion 3432 of the conductive coating 3430 (or the dimension along the direction perpendicular to the surface 3417 of the substrate 3410). For example, the ratio of w2:t1 can be in the range of about 1:1 to about 1:3, about 1:1 to about 1:1.5, or about 1:1 to about 1:2. Although the thickness t1 is generally relatively uniform on the conductive coating 3430, the degree of overlap between the second portion 3434 and the nucleation inhibition coating 3420 (i.e., w2) can vary to some extent in different parts of the surface 3417.

[0153] exist Figure 19 In another embodiment shown, the conductive coating 3430 further includes a third portion 3436 disposed between the second portion 3434 and the nucleation inhibition coating 3420. As shown, the second portion 3434 of the conductive coating 3430 extends laterally over and is spaced from the third portion 3436, and the third portion 3436 can be in direct physical contact with the surface 3422 of the nucleation inhibition coating 3420. The thickness t3 of the third portion 3436 can be less than, and in some cases substantially less than, the thickness t1 of the first portion 3432 of the conductive coating 3430. Furthermore, in at least some embodiments, the width w3 of the third portion 3436 can be greater than the width w2 of the second portion 3434. Therefore, the third portion 3436 can extend laterally to a greater extent than the second portion 3434 to overlap with the nucleation inhibition coating 3420. For example, the ratio of w3:t1 can be in the range of about 1:2 to about 3:1 or about 1:1.2 to about 2.5:1. Although the thickness t1 is generally relatively uniform across the conductive coating 3430, the degree of overlap (i.e., w3) between the third portion 3436 and the nucleation inhibition coating 3420 can vary to some extent across different parts of the surface 3417. The thickness t3 of the third portion 3436 can be no greater than or less than approximately 5% of the thickness t1 of the first portion 3432. For example, t3 can be no greater than or less than approximately 4%, no greater than or less than approximately 3%, no greater than or less than approximately 2%, no greater than or less than approximately 1%, or no greater than or less than approximately 0.5% of t1. Figure 19As shown, instead of or in addition to the third portion 3436 formed as a thin film, the material of the conductive coating 3430 may be formed as islands or unconnected clusters on a portion of the nucleation inhibition coating 3420. For example, such islands or discontinuous clusters may include features that are physically separated from each other, such that the islands or clusters do not form a continuous layer.

[0154] exist Figure 20A In another embodiment shown, a nucleation promoting coating 3451 is disposed between a substrate 3410 and a conductive coating 3430. Specifically, the nucleation promoting coating 3451 is disposed between a first portion 3432 of the conductive coating 3430 and a second region 3412 of the substrate 3410. The nucleation promoting coating 3451 is shown disposed on the second region 3412 of the substrate 3410, rather than on the first region 3415 of the deposition nucleation inhibiting coating 3420. The nucleation promoting coating 3451 can be formed such that at the interface or boundary between the nucleation promoting coating 3451 and the conductive coating 3430, the surface of the nucleation promoting coating 3451 exhibits a relatively high affinity or initial adhesion probability to the material of the conductive coating 3430. Therefore, the presence of the nucleation promoting coating 3451 can promote the formation and growth of the conductive coating 3430 during deposition. Figure 20A The conductive coating 3430 (including the dimensions of the first portion 3432 and the second portion 3434) and other coatings may have various characteristics similar to those described above. Figure 18-19 The characteristics will not be repeated for the sake of brevity.

[0155] exist Figure 20B In another embodiment shown, a nucleation promoting coating 3451 is disposed on a first region 3415 and a second region 3412 of a substrate 3410, and a nucleation inhibiting coating 3420 covers a portion of the nucleation promoting coating 3451 disposed on the first region 3415. Another portion of the nucleation promoting coating 3451 is exposed from the nucleation inhibiting coating 3420, or is substantially unaffected by the nucleation inhibiting coating 3420, and a conductive coating 3430 covers the exposed portion of the nucleation promoting coating 3451. Figure 20B The conductive coating 3430 and other coatings can have various characteristics similar to those described above. Figure 18-19 The characteristics will not be repeated for the sake of brevity.

[0156] Figure 21Another embodiment is shown, in which the conductive coating 3430 partially overlaps with a portion of the nucleation inhibition coating 3420 in a third region 3419 of the substrate 3410. Specifically, in addition to the first portion 3432 and the second portion 3434, the conductive coating 3430 also includes a third portion 3480. As shown, the third portion 3480 of the conductive coating 3430 is disposed between the first portion 3432 and the second portion 3434 of the conductive coating 3430, and the third portion 3480 can be in direct physical contact with the surface 3422 of the nucleation inhibition coating 3420. In this respect, the overlap in the third region 3419 can be formed due to the lateral growth of the conductive coating 3430 during an open-mask or maskless deposition process. More specifically, although the surface 3422 of the nucleation inhibition coating 3420 exhibits a relatively low initial adhesion probability to the material of the conductive coating 3430, and therefore the probability of nucleation of the material on the surface 3422 is low, as the thickness of the conductive coating 3430 increases, the coating 3430 can also grow laterally and can cover a portion of the nucleation inhibition coating 3420, such as... Figure 21 As shown.

[0157] Although details of certain features of the apparatus and conductive coating 3430 of the embodiments of Figures 20-21 have been omitted in the above description, it should be understood that, regarding Figure 18 and Figure 19 The description of the various features of the conductive coating 3430, including the gap 3441, the second portion 3434, and the third portion 3436, will similarly apply to these embodiments.

[0158] Figure 22A Another embodiment is shown, wherein a first region 3415 of the substrate 3410 is coated with a nucleation inhibition coating 3420, and a second region 3412 adjacent to the first region 3415 is coated with a conductive coating 3430.

[0159] It has been observed that, at least in some cases, open-mask or maskless deposition of the conductive coating 3430 on a substrate surface that has been partially coated with the nucleation inhibition coating 3420 can result in the formation of the conductive coating 3430 exhibiting a tapered cross-sectional profile at or near the interface between the conductive coating 3430 and the nucleation inhibition coating 3420.

[0160] Figure 22A An embodiment is shown where the thickness of the conductive coating 3430 is reduced at or near the interface between the conductive coating 3430 and the nucleation inhibition coating 3420 due to the tapered profile of the conductive coating 3430. Specifically, the thickness of the conductive coating 3430 at or near the interface is less than the average thickness of the conductive coating 3430. Although the tapered profile of the conductive coating 3430 in... Figure 22AIn some embodiments, the profile is shown as curved or arched, but in others, it can be substantially linear or non-linear. For example, the thickness of the conductive coating 3430 can decrease substantially linearly, exponentially, quadratically, or otherwise in the region near the interface.

[0161] During the nucleation stage of thin film formation, molecules in the gas phase condense on the surface of the substrate to form nuclei. Without being bound by a specific theory, it is assumed that the shape and size of these nuclei, and their subsequent growth into islands and then into a thin film, depend on many factors, such as the vapor, the substrate, and the interfacial tension between the condensed nuclei. Further, it is assumed that during thin film nucleation and growth, at or near the interface between the exposed surface of the substrate and the nucleation inhibition coating, a relatively high contact angle between the film edge and the substrate will be observed due to the "dehumidification" of the solid surface of the film by the nucleation inhibition coating. This dehumidification characteristic is driven by the minimization of surface energy between the substrate, the thin film, the vapor, and the nucleation inhibition layer. Therefore, it is assumed that the presence and characteristics of the nucleation inhibition coating have a significant impact on the nucleation and growth patterns at the edges of the conductive coating.

[0162] It has been observed that the "contact angle" of the conductive coating 3430 at or near the interface between the conductive coating 3430 and the nucleation inhibition coating 3420 varies depending on the characteristics of the nucleation inhibition coating 3420, such as relative affinity or initial adhesion probability. It is further hypothesized that the contact angle of the nucleus may determine the thin film contact angle of the conductive coating formed by deposition. For example, refer to... Figure 22A Contact angle θ c The contact angle can be determined by measuring the slope of the tangent of the conductive coating 3430 at or near the interface between the conductive coating 3430 and the nucleation inhibition coating 3420. In other instances where the cross-sectional tapered profile of the conductive coating 3430 is substantially linear, the contact angle can be determined by measuring the slope of the conductive coating 3430 at or near the interface. As will be understood, the contact angle is generally measured relative to the underlying surface. For simplicity, the embodiments provided herein have shown coatings deposited on flat surfaces; however, it should be understood that coatings can be deposited on non-flat surfaces.

[0163] In some embodiments, the contact angle of the conductive coating 3430 can be greater than about 90 degrees. Now refer to Figure 22B An embodiment is shown in which the conductive coating 3430 includes a portion extending through the interface between the nucleation inhibition coating 3420 and the conductive coating 3430, and is spaced apart from the nucleation inhibition coating 3420 by a gap 3441. In such an embodiment, for example, the contact angle θ c It can be greater than approximately 90 degrees.

[0164] In at least some applications, forming a conductive coating 3430 exhibiting a relatively high contact angle may be particularly advantageous. For example, the contact angle may be greater than about 10 degrees, greater than about 15 degrees, greater than about 20 degrees, greater than about 25 degrees, greater than about 30 degrees, greater than about 35 degrees, greater than about 40 degrees, greater than about 50 degrees, greater than about 60 degrees, greater than about 70 degrees, greater than about 75 degrees, or greater than about 80 degrees. For example, a conductive coating 3430 with a relatively high contact angle may be particularly advantageous in producing finely patterned features while maintaining a relatively high aspect ratio. In some applications, it may be preferred to form a conductive coating 3430 exhibiting a contact angle greater than about 90 degrees. For example, the contact angle may be greater than about 90 degrees, greater than about 95 degrees, greater than about 100 degrees, greater than about 105 degrees, greater than about 110 degrees, greater than about 120 degrees, greater than about 130 degrees, greater than about 135 degrees, greater than about 140 degrees, greater than about 145 degrees, greater than about 150 degrees, or greater than about 160 degrees.

[0165] As described above, it is assumed that the contact angle of the conductive coating is determined at least in part based on the characteristics (e.g., initial adhesion probability) of the nucleation inhibition coating disposed adjacent to the region where the conductive coating is formed. Therefore, nucleation inhibition coating materials that allow selective deposition of conductive coatings exhibiting relatively high contact angles may be particularly useful in certain applications.

[0166] Without being bound by a specific theory, it is assumed that the relationship between the various interfacial tensions present during nucleation and growth is determined by the following equation, also known as Young's equation in capillary theory:

[0167] γ sv =γ fs +γ vf cosθ

[0168] Where γ sv Corresponding to the interfacial tension between the substrate and the vapor, γ fs Corresponding to the interfacial tension between the film and the substrate, γ vf This corresponds to the interfacial tension between the vapor and the membrane, and θ is the membrane core contact angle. Figure 37 The relationship between the various parameters expressed in Young's equation above is shown.

[0169] According to Young's equation, for island growth, the membrane-nucleus contact angle θ is greater than zero, therefore γ sv <γ fs +γ vf .

[0170] For layer growth where the deposited film "wets" the substrate, the nucleus contact angle θ = 0, therefore γ sv =γ fs +γ vf .

[0171] For Stranski-Krastanov (SK) growth, the strain energy per unit area of ​​membrane overgrowth is large relative to the interfacial tension between vapor and membrane, γ sv >γ fs +γ vf .

[0172] It is assumed that the nucleation and growth mode of the conductive coating at the interface between the nucleation inhibition coating and the exposed substrate surface follows an island growth model, where θ > 0. In particular, when the nucleation inhibition coating exhibits relatively low affinity or a low initial adhesion probability (i.e., dewetting) to the material used to form the conductive coating, a relatively high film contact angle of the conductive coating is resulting. Conversely, when the conductive coating is selectively deposited on the surface without the use of a nucleation inhibition coating, for example by employing a shadow mask, the nucleation and growth mode of the conductive coating may differ. In particular, it has been observed that, at least in some cases, conductive coatings formed using a shadow mask patterning process may exhibit a relatively low film contact angle of less than about 10 degrees.

[0173] It should be understood that, although not explicitly shown, the material used to form the nucleation inhibition coating 3420 may also be present to some extent at the interface between the conductive coating 3430 and the underlying surface (e.g., the surface of the nucleation promotion layer 3451 or the substrate 3410). This material can be deposited due to a masking effect, where the deposited pattern differs from the mask pattern, and may result in some evaporated material depositing on the masked portion of the target surface. For example, this material may be formed as islands or unconnected clusters, or as a thin film with a thickness substantially less than the average thickness of the nucleation inhibition coating 3420.

[0174] Figure 22C and 22D Another embodiment is shown, in which the conductive coating 3430 partially overlaps with a portion of the nucleation inhibition coating 3420 in a third region 3419 disposed between the first region 3415 and the second region 3412. As shown, the portion of the conductive coating that partially overlaps with a portion of the nucleation inhibition coating 3420 can be in direct physical contact with the surface 3422 of the nucleation inhibition coating 3420. In this respect, the overlap in the third region 3419 can be formed due to the lateral growth of the conductive coating 3430 during an open-mask or maskless deposition process. More specifically, although the surface 3422 of the nucleation inhibition coating 3420 may exhibit a relatively low affinity or initial adhesion probability for the material of the conductive coating 3430, and therefore the probability of nucleation of the material on the surface 3422 is low, the coating 3430 can also grow laterally as the thickness of the conductive coating 3430 increases, and can cover a portion of the nucleation inhibition coating 3420.

[0175] exist Figure 22C and 22D In the case shown in the figure, the contact angle θ of the conductive coating 3430 c Measurements can be taken at the edge of the conductive coating near the interface between the conductive coating 3430 and the nucleation inhibition coating 3420. Specifically, refer to... Figure 22D Contact angle θ c The temperature can be greater than about 90 degrees, which results in a portion of the conductive coating 3430 being separated from the nucleation inhibition coating 3420 by a gap 3441.

[0176] In some embodiments, the nucleation inhibition coating 3420 may be removed after the conductive coating 3430 is deposited, so that... Figure 18-22D In some embodiments, at least a portion of the underlying surface covered by the nucleation inhibition coating 3420 becomes exposed. For example, the nucleation inhibition coating 3420 can be selectively removed by etching or dissolving it, or by using plasma or solvent treatment techniques, without substantially affecting or eroding the conductive coating 3430.

[0177] Figure 23A An apparatus 5901 according to one embodiment is shown, which includes a substrate 5910 and a nucleation inhibition coating 5920 and a conductive coating 5915 (e.g., a magnesium coating) deposited on various regions of the surface of the substrate 5910.

[0178] Figure 23B The diagram illustrates device 5902 after the nucleation inhibition coating 5920 present in device 5901 has been removed from the surface of substrate 5910, such that conductive coating 5915 remains on substrate 5910, and the areas of substrate 5910 covered by nucleation inhibition coating 5920 are now exposed or uncovered. For example, the nucleation inhibition coating 5920 of device 5901 can be removed by exposing substrate 5910 to a solvent or plasma, which preferentially reacts with and / or etches away the nucleation inhibition coating 5920 without substantially affecting conductive coating 5915.

[0179] The devices in some embodiments can be electronic devices, and more specifically, optoelectronic devices. Optoelectronic devices generally include any means of converting electrical signals into photons or vice versa. Therefore, organic optoelectronic devices can include any optoelectronic device, wherein one or more active layers of said device are formed primarily of organic materials, more specifically organic semiconductor materials. Examples of organic optoelectronic devices include, but are not limited to, OLED devices and OPV devices.

[0180] It should also be understood that organic optoelectronic devices can be formed on various types of substrates. For example, the substrate can be a flexible or rigid substrate. The substrate can include, for example, silicon, glass, metal, polymer (e.g., polyimide), sapphire, or other materials suitable for use as a substrate.

[0181] It should also be understood that a variety of techniques, including vapor deposition, spin coating, line coating, printing, and various other deposition techniques, can be used to deposit various components of the apparatus.

[0182] In some embodiments, the organic optoelectronic device is an OLED device, wherein the organic semiconductor layer includes an electroluminescent layer. In some embodiments, the organic semiconductor layer may include additional layers, such as an electron injection layer, an electron transport layer, a hole transport layer, and / or a hole injection layer. For example, the OLED device may be an AMOLED device, a PMOLED device, or an OLED lighting panel or module. Furthermore, the optoelectronic device may be part of an electronic device. For example, the optoelectronic device may be an OLED display module of a computing device (e.g., a smartphone, tablet, laptop) or other electronic device (e.g., a display or television).

[0183] In some embodiments, the optoelectronic device is an OLED device, wherein the device typically includes an anode, an organic semiconductor layer, and a cathode.

[0184] Figure 24-27 Various embodiments of an active-matrix OLED (AMOLED) display device are illustrated. For simplicity, the references above have been omitted. Figure 18-22D The description details various aspects and characteristics of the conductive coating at or near the interface between the conductive coating and the nucleation inhibition coating. However, it should be understood that reference... Figure 18-22D The described features can also be applied Figure 24-27 Examples of implementations.

[0185] Figure 24 This is a schematic diagram illustrating the structure of an AMOLED device 3802 according to one embodiment.

[0186] Device 3802 includes a substrate 3810 and a buffer layer 3812 deposited on the surface of the substrate 3810. A thin-film transistor (TFT) 3804 is then formed on the buffer layer 3812. Specifically, a semiconductor active region 3814 is formed on a portion of the buffer layer 3812, and a gate insulating layer 3816 is deposited to substantially cover the semiconductor active region 3814. Next, a gate electrode 3818 is formed on top of the gate insulating layer 3816, and an interlayer insulating layer 3820 is deposited. A source electrode 3824 and a drain electrode 3822 are formed such that they extend through an opening formed through the interlayer insulating layer 3820 and the gate insulating layer 3816 to contact the semiconductor active layer 3814. An insulating layer 3842 is then formed on the TFT 3804. A first electrode 3844 is then formed on a portion of the insulating layer 3842. Figure 24 As shown, a first electrode 3844 extends through an opening in an insulating layer 3842, making it electrically connected to a drain electrode 3822. A pixel definition layer (PDL) 3846 is then formed to cover at least a portion of the first electrode 3844, including its outer edges. For example, the PDL 3846 may comprise an insulating organic or inorganic material. An organic layer 3848 is then deposited on the first electrode 3844, particularly in the region between adjacent PDLs 3846. A second electrode 3850 is deposited to substantially cover the organic layer 3848 and the PDL 3846. The surface of the second electrode 3850 is then substantially covered by a nucleation promoting coating 3852. For example, an open mask or maskless deposition technique can be used to deposit the nucleation promoting coating 3852. A nucleation inhibiting coating 3854 is selectively deposited on a portion of the nucleation promoting coating 3852. For example, a shadow mask can be used to selectively deposit the nucleation inhibiting coating 3854. Therefore, the auxiliary electrode 3856 is selectively deposited on the exposed surface of the nucleation promoting coating 3852 using an open mask or maskless deposition process. For further specificity, the auxiliary electrode 3856 (e.g., comprising magnesium) is selectively deposited on the exposed surface of the nucleation promoting coating 3852 by using an open mask or by thermal deposition under a mask, while leaving the surface of the nucleation inhibiting coating 3854 substantially free of material of the auxiliary electrode 3856.

[0187] Figure 25 The structure of an AMOLED device 3902 according to another embodiment is shown, in which the nucleation-promoting coating is omitted. For example, the nucleation-promoting coating can be omitted if the surface on which the auxiliary electrode is deposited has a relatively high initial adhesion probability to the material of the auxiliary electrode. In other words, for a surface with a relatively high initial adhesion probability, the nucleation-promoting coating can be omitted, and a conductive coating can still be deposited on it. For simplicity, certain details of the backplane, including details regarding the TFTs, are omitted in the description of the following embodiments.

[0188] exist Figure 25 In this process, an organic layer 3948 is deposited between a first electrode 3944 and a second electrode 3950. The organic layer 3948 may partially overlap with a portion of the PDL 3946. A nucleation inhibition coating 3954 is deposited on a portion of the second electrode 3950 (e.g., corresponding to the emission region) to provide a surface with a relatively low initial adhesion probability (e.g., a relatively low desorption energy) for the material used to form the auxiliary electrode 3956. Therefore, the auxiliary electrode 3956 is selectively deposited on a portion of the second electrode 3950 exposed from the nucleation inhibition coating 3954. As will be understood, the auxiliary electrode 3956 is electrically connected to the underlying second electrode 3950 to reduce the sheet resistance of the second electrode 3950. For example, the second electrode 3950 and the auxiliary electrode 3956 may comprise substantially the same material to ensure a high initial adhesion probability to the material of the auxiliary electrode 3956. Specifically, the second electrode 3950 may comprise substantially pure magnesium (Mg) or an alloy of magnesium with another metal (e.g., silver (Ag)). For Mg:Ag alloys, the volume ratio of the alloy components can range from about 1:9 to about 9:1. In other examples, the second electrode 3950 may include metal oxides, such as ITO and IZO, or a combination of metals and metal oxides. The auxiliary electrode 3956 may include substantially pure magnesium.

[0189] Figure 26 The structure of an AMOLED device 4002 according to yet another embodiment is shown. In the illustrated embodiment, an organic layer 4048 is deposited between a first electrode 4044 and a second electrode 4050, such that it partially overlaps with a portion of a PDL 4046. A nucleation inhibition coating 4054 is deposited to substantially cover the surface of the second electrode 4050, and a nucleation promotion coating 4052 is selectively deposited on a portion of the nucleation inhibition coating 4054. An auxiliary electrode 4056 is then formed on the nucleation promotion coating 4052. Optionally, a capping layer 4058 may be deposited to cover the exposed surfaces of the nucleation inhibition coating 4054 and the auxiliary electrode 4056.

[0190] Although auxiliary electrodes 3856 or 4056 are shown as in Figure 24 and 26 In the embodiments, the auxiliary electrode 3856 or 4056 is not in direct physical contact with the second electrode 3850 or 4050. However, it should be understood that the auxiliary electrode 3856 or 4056 and the second electrode 3850 or 4050 can still be electrically connected. For example, a relatively thin film of nucleation promoting or inhibiting material (e.g., up to about 100 nm) may exist between the auxiliary electrode 3856 or 4056 and the second electrode 3850 or 4050, which can still sufficiently allow current to pass through, thereby reducing the sheet resistance of the second electrode 3850 or 4050.

[0191] Figure 27 The structure of an AMOLED device 4102 according to yet another embodiment is shown, wherein an interface between a nucleation inhibition coating 4154 and an auxiliary electrode 4156 is formed on a sloping surface created by a PDL 4146. The device 4102 includes an organic layer 4148 deposited between a first electrode 4144 and a second electrode 4150, and the nucleation inhibition coating 4154 is deposited on a portion of the second electrode 4150 corresponding to the emission region of the device 4102. The auxiliary electrode 4156 is deposited on a portion of the second electrode 4150 exposed from the nucleation inhibition coating 4154.

[0192] Although not shown, Figure 27 The AMOLED device 4102 may further include a nucleation promoting coating disposed between an auxiliary electrode 4156 and a second electrode 4150. The nucleation promoting coating may also be disposed between a nucleation inhibiting coating 4154 and a second electrode 4150, particularly when the nucleation promoting coating is deposited using an open mask or maskless deposition process.

[0193] Figure 28A A portion of an AMOLED device 4300 according to yet another embodiment is shown, wherein the AMOLED device 4300 includes a plurality of light-transmitting regions. As shown, the AMOLED device 4300 includes a plurality of pixels 4321 and auxiliary electrodes 4361 disposed between adjacent pixels 4321. Each pixel 4321 includes a sub-pixel region 4331, which further includes a plurality of sub-pixels 4333, 4335, 4337 and a light-transmitting region 4351. For example, sub-pixel 4333 may correspond to a red sub-pixel, sub-pixel 4335 may correspond to a green sub-pixel, and sub-pixel 4337 may correspond to a blue sub-pixel. As will be explained, the light-transmitting region 4351 is substantially transparent to allow light to pass through the device 4300.

[0194] Figure 28B As shown Figure 28AThe diagram shows a cross-sectional view of device 4300 taken along line AA. In short, device 4300 includes a substrate 4310, a TFT 4308, an insulating layer 4342, and an anode 4344 formed on the insulating layer 4342 and electrically connected to the TFT 4308. A first PDL 4346a and a second PDL 4346b are formed on the insulating layer 4342, covering the edges of the anode 4344. One or more organic layers 4348 are deposited to cover the exposed areas of the anode 4344 and portions of the PDLs 4346a and 4346b. A cathode 4350 is then deposited on the one or more organic layers 4348. Next, a nucleation inhibition coating 4354 is deposited to cover portions of device 4300 corresponding to the light-transmitting region 4351 and the sub-pixel region 4331. The entire device surface is then exposed to a magnesium vapor flux, thereby selectively depositing magnesium on the uncoated areas of the cathode 4350. In this way, an auxiliary electrode 4361 is formed that is in electrical contact with the cathode 4350 below.

[0195] In device 4300, the light-transmitting region 4351 contains virtually no material that could substantially affect the transmission of light. Specifically, the TFT 4308, anode 4344, and auxiliary electrode 4361 are all located within the sub-pixel region 4331, ensuring that these components do not attenuate or obstruct light transmission through the light-transmitting region 4351. This arrangement allows a viewer viewing device 4300 from a typical viewing distance to see through the device 4300 when the pixels are off or not emitting light, resulting in a transparent AMOLED display.

[0196] Although not shown, Figure 28B The AMOLED device 4300 may further include a nucleation promoting coating disposed between an auxiliary electrode 4361 and a cathode 4350. The nucleation promoting coating may also be disposed between a nucleation inhibiting coating 4354 and a cathode 4350.

[0197] In other embodiments, if the various layers or coatings, including organic layer 4348 and cathode 4350, are substantially transparent, then these layers or coatings may cover a portion of the light-transmitting region 4351. Alternatively, if desired, PDLs 4346a and 4346b may not be provided in the light-transmitting region 4351.

[0198] It should be understood that, in addition to Figure 28A and 28B In addition to the arrangement shown, pixel and sub-pixel arrangements can also be used, and the auxiliary electrode 4361 can be disposed in other areas of the pixel. For example, if needed, the auxiliary electrode 4361 can be disposed in the area between the sub-pixel area 4331 and the light-transmitting area 4351, and / or between adjacent sub-pixels.

[0199] Figure 29A A portion of an AMOLED device 4300 according to an embodiment is shown, wherein the AMOLED device 4300 includes a plurality of light-transmitting regions. As shown, the AMOLED device 4300 includes a plurality of pixels 4321. Each pixel 4321 includes a sub-pixel region 4331, which further includes a plurality of sub-pixels 4333, 4335, 4337 and a light-transmitting region 4351. For example, sub-pixel 4333 may correspond to a red sub-pixel, sub-pixel 4335 may correspond to a green sub-pixel, and sub-pixel 4337 may correspond to a blue sub-pixel. As will be explained, the light-transmitting region 4351 is substantially transparent to allow light to pass through the device 4300.

[0200] Figure 29B A cross-sectional view of a device 4300 taken along line BB according to one embodiment is shown. The device 4300 includes a substrate 4310, a TFT 4308, an insulating layer 4342, and an anode 4344 formed on the insulating layer 4342 and electrically connected to the TFT 4308. A first PDL 4346a and a second PDL 4346b are formed on the insulating layer 4342, covering the edges of the anode 4344. One or more organic layers 4348 are deposited to cover the exposed areas of the anode 4344 and portions of the PDLs 4346a and 4346b. A first conductive coating 4350 is then deposited on the one or more organic layers 4348. In the illustrated embodiment, the first conductive coating 4350 is disposed on a sub-pixel region 4331 and a light-transmitting region 4351. In such an embodiment, the first conductive coating 4350 may be substantially transparent or light-transmitting. For example, the thickness of the first conductive coating 4350 can be relatively thin, such that the presence of the first conductive coating 4350 does not substantially attenuate the transmission of light through the light-transmitting region 4351. The first conductive coating 4350 can be deposited, for example, using an open mask or maskless deposition process. Next, a nucleation inhibition coating 4362 is deposited to cover the portion of the device 4300 corresponding to the light-transmitting region 4351. Then, the entire device surface is exposed to a vapor flux of the material used to form the second conductive coating 4352, thereby selectively depositing the second conductive coating 4352 on the uncoated areas of the first conductive coating 4350. Specifically, the second conductive coating 4352 is disposed on the portion of the device 4300 corresponding to the sub-pixel region 4331. In this way, the cathode of the device 4300 is formed by the combination of the first conductive coating 4350 and the second conductive coating 4352.

[0201] In some embodiments, the thickness of the first conductive coating 4350 is less than the thickness of the second conductive coating 4352. In this way, a relatively high transmittance can be maintained in the light-transmitting region 4351. For example, the thickness of the first conductive coating 4350 may be less than about 30 nm, less than about 25 nm, less than about 20 nm, less than about 15 nm, less than about 10 nm, less than about 8 nm, or less than about 5 nm, while the thickness of the second conductive coating 4352 may be less than about 30 nm, less than about 25 nm, less than about 20 nm, less than about 15 nm, less than about 10 nm, or less than about 8 nm, for example. In other embodiments, the thickness of the first conductive coating 4350 is greater than the thickness of the second conductive coating 4352. In yet another embodiment, the thickness of the first conductive coating 4350 and the thickness of the second conductive coating 4352 may be approximately the same.

[0202] The materials used to form the first conductive coating 4350 and the second conductive coating 4352 can be substantially the same as those used to form the first conductive coating 1371 and the second conductive coating 1372, respectively. Since these materials have already been described above with reference to other embodiments, a description of these materials is omitted for brevity.

[0203] In device 4300, the light-transmitting region 4351 contains virtually no material that could substantially affect the transmission of light. Specifically, the TFT 4308, anode 4344, and auxiliary electrode are all located within the sub-pixel region 4331, ensuring that these components do not attenuate or impede light transmission through the light-transmitting region 4351. This arrangement allows a viewer viewing device 4300 from a typical viewing distance to see through the device 4300 when the pixels are off or not emitting light, resulting in a transparent AMOLED display.

[0204] In some embodiments, the electrodes of the AMOLED device can be patterned. For example, a conductive coating selectively deposited using the process described above in various embodiments can be used as an electrode (e.g., a cathode) of the AMOLED device.

[0205] Therefore, in one embodiment, a light-emitting optoelectronic device is provided, comprising: an emitting region and a non-emitting region; a nucleation inhibition coating disposed in at least a portion of the non-emitting region; and a conductive coating disposed in the emitting region. In another embodiment, the emitting region comprises a first electrode, a semiconductor layer disposed on the first electrode, and a conductive coating disposed on the semiconductor layer. In this way, for example, the first electrode can serve as the anode of the optoelectronic device, while the conductive coating can serve as the cathode of the optoelectronic device. In such an embodiment, the surface of the nucleation inhibition coating in the non-emitting region may be substantially free of the conductive coating or exposed from the conductive coating. In yet another embodiment, a nucleation promotion coating may be disposed between the semiconductor layer and the conductive coating. It should be understood that the light-emitting optoelectronic device may be an AMOLED device, which may further include other layers, coatings, and components (including but not limited to TFTs, packages, etc.) as described herein in relation to such devices. For example, the thickness of the conductive coating disposed in the emitting region may be less than about 40 nm, for example, between about 5 nm and about 30 nm, between about 10 nm and about 25 nm, or between about 15 nm and about 25 nm. In some instances, the non-emitting region may include a light-transmitting region.

[0206] Figure 29C A cross-section of a device 4300' according to one embodiment is shown, wherein a first conductive coating 4350' is selectively disposed in a sub-pixel region 4331, and the light-transmitting region 4351 is substantially free of or exposed from the material used to form the first conductive coating 4350'. For example, during the fabrication of the device 4300', a nucleation inhibition coating 4362 may be deposited in the light-transmitting region 4351 prior to the deposition of the first conductive coating 4350'. In this way, the first conductive coating 4350' can be selectively deposited in the sub-pixel region 4331 using an open mask or maskless deposition process. As described above, the material used to form the first conductive coating 4350' typically exhibits relatively poor affinity (e.g., low initial adhesion probability) to the surface deposited onto the nucleation inhibition coating 4362. For example, the first conductive coating 4350' may comprise a high vapor pressure material, such as ytterbium (Yb), zinc (Zn), cadmium (Cd), and magnesium (Mg). In some embodiments, the first conductive coating 4350' may comprise pure or substantially pure magnesium. By providing a light-transmitting region 4351 with no or substantially no first conductive coating 4350', in some cases, such as with Figure 29B Compared to device 4300, the light transmittance of this region can be advantageously increased. In some embodiments, a nucleation-promoting coating may be arranged at the interface between the first conductive coating 4350' and the semiconductor layer 4348.

[0207] Although not shown, Figure 29B AMOLED device 4300 and Figure 29C The AMOLED device 4300' may further include a nucleation promoting coating disposed between the first conductive coating 4350 or 4350' and the underlying surface (e.g., organic layer 4348). Such a nucleation promoting coating may also be disposed between the nucleation inhibiting coating 4362 and the underlying surface (e.g., PDL 4346a-b).

[0208] In some embodiments, the nucleation inhibition coating 4362 may be formed simultaneously with at least one of the organic layers 4348. For example, the material used to form the nucleation inhibition coating 4362 may also be used to form at least one layer of the organic layers 4348. In this way, the number of stages in the manufacturing apparatus 4300 or 4300' can be reduced.

[0209] In some embodiments, additional conductive coatings, including second and third conductive coatings already described in conjunction with other embodiments above, may also be provided on sub-pixels 4333, 4335, and 4337. Furthermore, in some embodiments, auxiliary electrodes may be provided in the non-emitting regions of devices 4300, 4300'. For example, such auxiliary electrodes may be provided in the region between adjacent pixels 4321 such that they substantially do not affect the transmittance in sub-pixel region 4331 or light-transmitting region 4351. If desired, auxiliary electrodes may also be disposed in the region between sub-pixel region 4331 and light-transmitting region 4351, and / or between adjacent sub-pixels. For example, refer to… Figure 29B In one embodiment, an additional nucleation suppression coating can be deposited on a portion of the second conductive coating 4352 corresponding to the sub-pixel 4333 region, while leaving the portion corresponding to the non-emitting region uncovered or exposed. In this way, open-mask or maskless deposition of conductive material can be performed, resulting in the formation of auxiliary electrodes on the non-emitting region of the device 4300.

[0210] In some embodiments, if the various layers or coatings, including organic layer 4348, are substantially transparent, then these layers or coatings may cover a portion of the light-transmitting region 4351. Alternatively, PDLs 4346a, 4346b may be omitted from the light-transmitting region 4351 if desired.

[0211] It should be understood that, in addition to Figure 29A , 29B In addition to the arrangement shown in 29C, pixel and subpixel arrangements can also be used.

[0212] In the foregoing embodiments, the nucleation inhibition coating, in addition to inhibiting the nucleation and deposition of conductive materials (e.g., magnesium) thereon, can also be used to enhance the external coupling of light from the device. Specifically, the nucleation inhibition coating can be used as a refractive index matching coating, a capping layer (CPL), and / or an antireflective coating.

[0213] A barrier coating (not shown) may be provided to encapsulate the device illustrated in the foregoing embodiments depicting an AMOLED display device. As will be understood, such a barrier coating can prevent various device layers, including organic layers and potentially easily oxidized cathodes, from exposure to moisture and ambient air. For example, the barrier coating may be a thin-film encapsulation formed by printing, CVD, sputtering, ALD, any combination of the foregoing, or by any other suitable method. A barrier coating may also be provided by pressing a pre-formed barrier film layer onto the device using an adhesive. For example, the barrier coating may be a multilayer coating comprising organic materials, inorganic materials, or a combination of both. In some embodiments, the barrier coating may further comprise a getter material and / or a desiccant.

[0214] The sheet resistance specification of the common electrode of an AMOLED display device can vary depending on the size of the display device (e.g., panel size) and the tolerance for voltage variations. Typically, as the panel size increases and the tolerance for voltage variations across the panel decreases, the sheet resistance specification increases (e.g., a lower sheet resistance is specified).

[0215] According to one embodiment, the sheet resistance specifications and the corresponding thicknesses of auxiliary electrodes conforming to the specifications were calculated for various panel sizes. The sheet resistance and auxiliary electrode thicknesses with voltage tolerances of 0.1V and 0.2V were calculated. For calculation purposes, an aperture ratio of 0.64 was assumed for all display panel sizes.

[0216] Table 2 below summarizes the specified thickness of the auxiliary electrodes for example panel sizes.

[0217] Table 2 - Specified Thickness of Auxiliary Electrodes for Various Panel Sizes

[0218]

[0219] As will be understood, this includes thin-film transistors (TFTs) (e.g., Figure 24 The various layers and portions of the backplane, including the TFT 3804 shown, can be manufactured using a variety of suitable materials and processes. For example, the TFT can be manufactured using organic or inorganic materials that can be deposited and / or processed using techniques such as CVD, PECVD, laser annealing, and PVD (including sputtering). As will be understood, these layers can be patterned using photolithography, which uses a photomask to expose selective portions of the photoresist covering the underlying device layer to ultraviolet light. Depending on the type of photoresist used, the exposed or unexposed portions of the photomask can then be washed away to reveal the desired portions of the underlying device layer. The patterned surface can then be etched using chemical or physical methods to effectively remove the exposed portions of the device layer.

[0220] Furthermore, while top-gate TFTs have been shown and described in some of the embodiments described above, it should be understood that other TFT structures may also be used. For example, the TFT may be a bottom-gate TFT. The TFT may be an n-type TFT or a p-type TFT. Examples of TFT structures include those utilizing amorphous silicon (a-Si), indium gallium zinc oxide (IGZO), and low-temperature polycrystalline silicon (LTPS).

[0221] Various layers and portions of the front panel, including electrodes, one or more organic layers, pixel definition layers, and capping layers, can be deposited using any suitable deposition process, including thermal evaporation and / or printing. It should be understood that, for example, when depositing such materials, a shadow mask can be appropriately used to produce the desired pattern, and various etching and selective deposition processes can also be used to pattern the various layers. Examples of such methods include, but are not limited to, photolithography, printing (including ink or vapor jet printing and roll-to-roll printing), OVPD, and LITI patterning.

[0222] Selectively deposit conductive coatings on the emission region

[0223] In one aspect, a method is provided for selectively depositing a conductive coating on one or more emission regions. In some embodiments, the method includes depositing a first conductive coating on a substrate. The substrate may include a first emission region and a second emission region. The first conductive coating deposited on the substrate may include coating a first portion of the first emission region of the substrate and coating a second portion of the second emission region of the substrate. The method may further include depositing a first nucleation inhibition coating on the first portion of the first conductive coating and then depositing a second conductive coating on the second portion of the first conductive coating.

[0224] Figure 30 This is a flowchart outlining the device manufacturing stages according to one embodiment. Figures 31A-31D This is a schematic diagram showing the apparatus for each stage of the process.

[0225] like Figure 31A As shown, a substrate 3102 is provided. The substrate 3102 includes a first emitting region 3112 and a second emitting region 3114. The substrate 3102 may further include one or more non-emitting regions 3121a-3121c. For example, the first emitting region 3112 and the second emitting region 3114 may correspond to a pixel region or a sub-pixel region of an electroluminescent device.

[0226] In stage 12, a first conductive coating 3131 is deposited on the substrate. For example... Figure 31BAs shown, a first conductive coating 3131 is deposited to coat a first emitting region 3112, a second emitting region 3114, and non-emitting regions 3121a-3121c. The first conductive coating 3131 includes a first portion 3132 corresponding to the portion coating the first emitting region 3112, and a second portion 3133 corresponding to the portion coating the second emitting region 3114. For example, the first conductive coating 3131 can be deposited by evaporation, including thermal evaporation and electron beam evaporation. In some embodiments, the first conductive coating 3131 can be deposited using an open mask or without a mask (i.e., without a mask). Other methods can be used to deposit the first conductive coating 3131, including but not limited to sputtering, chemical vapor deposition, printing (including ink or vapor jet printing, roll-to-roll printing, and microcontact transfer printing), OVPD, LITI, and combinations thereof.

[0227] In stage 14, a first nucleation inhibition coating 3141 is selectively deposited on a portion of the first conductive coating 3131. Figure 31C In the illustrated embodiment, a first nucleation inhibition coating 3141 is deposited to coat a first portion 3132 of a first conductive coating 3131, which corresponds to the first emission region 3112. In such an embodiment, a second portion 3133 of the first conductive coating 3131 disposed on the second emission region 3114 is substantially without or exposed from the first nucleation inhibition coating 3141. In some embodiments, the first nucleation inhibition coating 3141 may also optionally coat portions of the first conductive coating 3131 deposited on one or more non-emission regions. For example, the first nucleation inhibition coating 3141 may also optionally coat portions of the first conductive coating 3131 deposited on one or more non-emission regions (e.g., non-emission regions 3121a and / or 3121b) adjacent to the first emission region 3112. The first nucleation inhibition coating 3141 can be deposited using a variety of processes that selectively deposit materials on a surface, including but not limited to evaporation (including thermal evaporation and electron beam evaporation), photolithography, printing (including ink or vapor jet printing, roll-to-roll printing and microcontact transfer printing), OVPD, LITI patterning and combinations thereof.

[0228] Once the first nucleation inhibition coating 3141 has been deposited on the area of ​​the surface of the first conductive coating 3131, the second conductive coating 3151 can be deposited on the remaining uncovered area of ​​the surface where the nucleation inhibition coating is not present. Figure 31D In stage 16, the conductive coating source 3105 is shown as directing the evaporated conductive material to the surfaces of the first conductive coating 3131 and the first nucleation inhibition coating 3141. Figure 31DAs shown, the conductive coating source 3105 can guide the evaporated conductive material to be incident on both the covered or treated areas of the first conductive coating 3131 (i.e., the areas of the first conductive coating 3131 on which the nucleation inhibition coating 3141 is deposited) and the uncovered or untreated areas. However, since the surface of the first nucleation inhibition coating 3141 exhibits a relatively low initial adhesion coefficient compared to the uncovered surface of the first conductive coating 3131, the second conductive coating 3151 selectively deposits on the surface of the first conductive coating where the first nucleation inhibition coating 3141 is absent. Therefore, the second conductive coating 3151 can coat a second portion 3133 of the first conductive coating 3131, corresponding to the portion of the first conductive coating 3131 that coats the second emission region 3114. Figure 31D As shown, the second conductive coating 3151 may also coat other portions or areas of the first conductive coating 3131, including portions coating the non-emissive regions 3121a, 3121b, and 3121c. The second conductive coating 3151 may comprise, for example, pure or substantially pure magnesium. For example, the second conductive coating 3151 may be formed using the same material used to form the first conductive coating 3131. The second conductive coating 3151 may be deposited using an open mask or without a mask (i.e., a maskless deposition process).

[0229] In some embodiments, the method may further include additional stages following stage 16. Such additional stages may include, for example, depositing one or more additional nucleation inhibition coatings, depositing one or more additional conductive coatings, depositing auxiliary electrodes, depositing external coupling coatings, and / or encapsulation devices.

[0230] It should be understood that although the method has been shown and described above with respect to a device having first and second emission regions, the method can be similarly applied to a device having three or more emission regions. For example, this method can be used to deposit conductive coatings of different thicknesses based on the emission spectrum of each emission region.

[0231] The first conductive coating 3131 and the second conductive coating 3151 may be transparent or substantially transparent in at least a portion of the visible light wavelength range of the electromagnetic spectrum. To further clarify, the first conductive coating 3131 and the second conductive coating 3151 may each be transparent or substantially transparent in at least a portion of the visible light wavelength range of the electromagnetic spectrum. Therefore, when the second conductive coating (and any additional conductive coatings) is disposed on top of the first conductive coating to form a multi-coated electrode, such electrode may also be transparent or substantially transparent in the visible light wavelength portion of the electromagnetic spectrum. For example, the transmittance of the first conductive coating 3131, the second conductive coating 3151, and / or the multi-coated electrode in the visible light portion of the electromagnetic spectrum may be greater than about 30%, greater than about 40%, greater than about 45%, greater than about 50%, greater than about 60%, greater than 70%, greater than about 75%, or greater than about 80%.

[0232] In some embodiments, the thickness of the first conductive coating 3131 and the second conductive coating 3151 can be made relatively thin to maintain relatively high light transmittance. For example, the thickness of the first conductive coating 3131 can be about 5 to 30 nm, about 8 to 25 nm, or about 10 to 20 nm. The thickness of the second conductive coating 3151 can be, for example, about 1 to 25 nm, about 1 to 20 nm, about 1 to 15 nm, about 1 to 10 nm, or about 3 to 6 nm. Therefore, the thickness of the multi-coated electrode formed by the combination of the first conductive coating 3131, the second conductive coating 3151, and any additional conductive coating can be, for example, about 6 to 35 nm, about 10 to 30 nm, or about 10 to 25 nm, or about 12 to 18 nm.

[0233] In some embodiments, the first emission region 3112 and the second emission region 3114 may correspond to sub-pixel regions of an OLED display device. Therefore, it should be understood that the substrate 3102, on which various coatings are deposited, may include one or more additional organic and / or inorganic layers not specifically shown or described in the foregoing embodiments. For example, the OLED display device may be an active-matrix OLED (AMOLED) display device. In such embodiments, the substrate 3102 may include electrodes and at least one organic layer deposited on the electrodes in each emission region (e.g., a sub-pixel), such that a first conductive coating 3131 may be deposited on at least one organic layer. For example, the electrode may be an anode, and the first conductive coating 3131, either alone or in combination with a second conductive coating 3151 and any additional conductive coatings, may form a cathode. At least one organic layer may include an emitter layer. At least one organic layer may further include a hole injection layer, a hole transport layer, an electron blocking layer, an electron transport layer, an electron injection layer, and / or any additional layers. The substrate 3102 may further include a plurality of thin-film transistors (TFTs). Each anode provided in the device may be electrically connected to at least one TFT. For example, substrate 3102 may include one or more top-gate thin-film transistors (TFTs), one or more bottom-gate TFTs, and / or other TFT structures. TFTs may be n-type TFTs or p-type TFTs. Examples of TFT structures include those comprising amorphous silicon (a-Si), indium gallium zinc oxide (IGZO), and low-temperature polycrystalline silicon (LTPS).

[0234] Substrate 3102 may also include a base substrate for supporting the aforementioned additional organic and / or inorganic layers. For example, the base substrate may be a flexible or rigid substrate. The base substrate may include, for example, silicon, glass, metal, polymer (e.g., polyimide), sapphire, or other materials suitable for use as a base substrate.

[0235] The first emission region 3112 and the second emission region 3114 can be sub-pixels configured to emit light with different wavelengths or emission spectra from each other. The first emission region 3112 can be configured to emit light having a first wavelength or a first emission spectrum, and the second emission region 3114 can be configured to emit light having a second wavelength or a second emission spectrum. The first wavelength can be less than or greater than the second wavelength and / or a third wavelength, and the second wavelength can be less than or greater than the first wavelength and / or the third wavelength. The device can include any number of additional emission regions, pixels, or sub-pixels. For example, the device can include additional emission regions configured to emit light having a third wavelength or a third emission spectrum that is different from the wavelength or emission spectrum of the first or second emission region. The device can also include additional emission regions configured to emit light having substantially the same wavelength or emission spectrum as the first emission region, the second emission region, or other additional emission regions.

[0236] In some embodiments, the first nucleation inhibition coating 3141 can be selectively deposited using the same shade mask used for depositing at least one organic layer of the first emission region 3112. In this way, since there is no additional mask requirement for depositing the nucleation inhibition layer, the optical microcavity effect of each sub-pixel can be tuned in a cost-effective manner.

[0237] Figure 32 This is a schematic cross-sectional view showing a portion of the AMOLED device 1300. For simplicity, certain details of the backplane, including details regarding TFTs 1308a, 1308b, and 1308c, are omitted in the description of the following embodiments.

[0238] exist Figure 32 In one embodiment, device 1300 includes a first emitting region 1331a, a second emitting region 1331b, and a third emitting region 1331c. For example, the emitting regions may correspond to sub-pixels of device 1300. In device 1300, first electrodes 1344a, 1344b, and 1344c are formed in each of the first emitting region 1331a, the second emitting region 1331b, and the third emitting region 1331c, respectively. Figure 32As shown, each of the first electrodes 1344a, 1344b, and 1344c extends through an opening in the insulating layer 1342, thereby electrically communicating with its respective TFT 1308a, 1308b, and 1308c. Pixel definition layers (PDLs) 1346a-d are then formed to cover at least a portion of the first electrodes 1344a-c, including the outer edge of each electrode. For example, PDLs 1346a-d may comprise insulating organic or inorganic materials. Organic layers 1348a, 1348b, and 1348c are then deposited on the respective first electrodes 1344a, 1344b, and 1344c, particularly in the region between adjacent PDLs 1346a-d. A first conductive coating 1371 is deposited to substantially cover the organic layers 1348a-c and the PDLs 1346a-d. For example, the first conductive coating 1371 may form a common cathode or a portion thereof. A first nucleation inhibition coating 1361 is selectively deposited on a portion of the first conductive coating 1371 disposed on the first emission region 1331a. For example, a fine metal mask or a shadow mask can be used to selectively deposit the first nucleation inhibition coating 1361. Thus, a second conductive coating 1372 is selectively deposited on the exposed surface of the first conductive coating 1371 using an open-mask or maskless deposition process. For further specificity, by using an open mask or without a mask for thermal deposition of the second conductive coating 1372 (e.g., comprising magnesium), the second conductive coating 1372 is selectively deposited on the exposed surface of the first conductive coating 1371, while leaving the surface of the first nucleation inhibition coating 1361 substantially free of material from the first conductive coating 1372. The second conductive coating 1372 can be deposited to coat portions of the first conductive coating 1371 disposed on the second emission region 1331b and the third emission region 1331c.

[0239] exist Figure 32 In the illustrated device 1300, the first conductive coating 1371 and the second conductive coating 1372 can jointly form a common cathode 1375. Specifically, the common cathode 1375 can be formed by a combination of the first conductive coating 1371 and the second conductive coating 1372, wherein the second conductive coating 1372 is directly disposed on at least a portion of the first conductive coating 1371. The common cathode 1375 has a first thickness t in the first emission region 1331a. c1 Furthermore, it has a second thickness t in the second launch region 1335b and the third launch region 1335c. c2 First thickness t c1 The thickness can correspond to the thickness of the first conductive coating 1371, and the second thickness t c2 This can correspond to the combined thickness of the first conductive coating 1371 and the second conductive coating 1372. Therefore, the second thickness t c2 Greater than the first thickness tc1 .

[0240] Figure 33 Another embodiment of the device 1300 is shown, wherein the common cathode 1375 further comprises a third conductive coating 1373. Specifically, in Figure 33 In one embodiment, the device 1300 includes a second nucleation inhibition coating 1362 disposed on a portion of a second conductive coating 1372, which is provided on the second emission region 1331b. A third conductive coating 1373 is then deposited on the exposed or untreated surface of the second conductive coating 1372, including the portion of the second conductive coating 1372 disposed on the third emission region 1331c. In this way, a first thickness t can be provided in the first emission region 1331a. c1 The second launch region 1331b has a second thickness t c2 The third launch region 1331c has a third thickness t. c3 The common cathode is 1375. As will be understood, the first thickness t c1 Corresponding to the thickness of the first conductive coating 1371, the second thickness t c2 Corresponding to the thickness of the second conductive coating 1372, the third thickness t c3 This corresponds to the thickness of the third conductive coating 1373. Therefore, the first thickness t c1 It can be less than the second thickness t c2 And the third thickness t c3 It can be greater than the second thickness t c2 .

[0241] exist Figure 34 In yet another embodiment shown, the device 1300 may further include a third nucleation inhibition coating 1363 disposed on the third emission region 1331c. Specifically, the third nucleation inhibition coating 1363 is shown deposited on a portion of a third conductive coating 1373, which coats a portion of the device corresponding to the third emission region 1331c.

[0242] exist Figure 35 In another embodiment shown, device 1300 further includes an auxiliary electrode 1381 disposed in a non-emitting region of device 1300. For example, the auxiliary electrode 1381 can be formed using a process substantially the same as that used for depositing the second conductive coating 1372 and / or the third conductive coating 1373. The auxiliary electrode 1381 is shown deposited on pixel definition layers 1346a-1346d, which correspond to the non-emitting regions of device 1300. The emitting regions 1331a, 1331b, and 1331c may be substantially devoid of material for forming the auxiliary electrode 1381.

[0243] The first conductive coating 1371, the second conductive coating 1372, and the third conductive coating 1373 may be transparent or substantially transparent in the visible light wavelength range of the electromagnetic spectrum. To further clarify, the first conductive coating 1371, the second conductive coating 1372, and the third conductive coating 1373 may each be transparent or substantially transparent in at least a portion of the visible light wavelength range of the electromagnetic spectrum. Therefore, when the second conductive coating and / or the third conductive coating are disposed on top of the first conductive coating to form a common cathode 1375, this electrode may also be transparent or substantially transparent in the visible light wavelength range of the electromagnetic spectrum. For example, the transmittance of the first conductive coating 1371, the second conductive coating 1372, the third conductive coating 1373, and / or the common cathode 1375 may be greater than about 30%, greater than about 40%, greater than about 45%, greater than about 50%, greater than about 60%, greater than about 70%, greater than about 75%, or greater than about 80% in the visible light portion of the electromagnetic spectrum.

[0244] In some embodiments, the thicknesses of the first conductive coating 1371, the second conductive coating 1372, and the third conductive coating 1373 can be made relatively thin to maintain relatively high light transmittance. For example, the thickness of the first conductive coating 1371 can be about 5 to 30 nm, about 8 to 25 nm, or about 10 to 20 nm. The thickness of the second conductive coating 1372 can be, for example, about 1 to 25 nm, about 1 to 20 nm, about 1 to 15 nm, about 1 to 10 nm, or about 3 to 6 nm. The thickness of the third conductive coating 1373 can be, for example, about 1 to 25 nm, about 1 to 20 nm, about 1 to 15 nm, about 1 to 10 nm, or about 3 to 6 nm. Therefore, the thickness of the common cathode 1375 formed by the combination of the first conductive coating 1371, the second conductive coating 1372, and / or the third conductive coating 1373 can be, for example, about 6 to 35 nm, about 10 to 30 nm, or about 10 to 25 nm, or about 12 to 18 nm.

[0245] The thickness of the auxiliary electrode 1381 may be greater than the thickness of the first conductive coating 1371, the second conductive coating 1372, the third conductive coating 1373, and / or the common cathode 1375. For example, the thickness of the auxiliary electrode 1381 may be greater than about 50 nm, greater than about 80 nm, greater than about 100 nm, greater than about 150 nm, greater than about 200 nm, greater than about 300 nm, greater than about 400 nm, greater than about 500 nm, greater than about 700 nm, greater than about 800 nm, greater than about 1 μm, greater than about 1.2 μm, greater than about 1.5 μm, greater than about 2 μm, greater than about 2.5 μm, or greater than about 3 μm. In some embodiments, the auxiliary electrode 1375 may be substantially opaque or opaque. However, since the auxiliary electrode 1375 is generally provided in the non-emitting region of the device, the auxiliary electrode 1375 may not cause significant optical interference. For example, the transmittance of the auxiliary electrode 1375 in the visible light portion of the electromagnetic spectrum may be less than about 50%, less than about 70%, less than about 80%, less than about 85%, less than about 90%, or less than about 95%. In some embodiments, the auxiliary electrode 1375 may absorb light in at least a portion of the visible light wavelength range of the electromagnetic spectrum.

[0246] The first conductive coating 1371 may comprise various materials commonly used to form a transparent conductive layer or coating. For example, the first conductive coating 1371 may comprise a transparent conductive oxide (TCO), a metallic or non-metallic thin film, or any combination thereof. The first conductive coating 1371 may further comprise two or more layers or coatings. For example, such layers or coatings may be different layers or coatings stacked on top of each other. The first conductive coating 1371 may comprise various materials, including, for example, indium tin oxide (ITO), fluorine tin oxide (FTO), indium zinc oxide (IZO), magnesium (Mg), aluminum (Al), ytterbium (Yb), silver (Ag), zinc (Zn), cadmium (Cd), and any combination of two or more thereof, including alloys containing any of the aforementioned materials. For example, the first conductive coating 1371 may comprise a Mg:Ag alloy, a Mg:Yb alloy, a bilayer structure comprising a Yb layer and an Ag layer, or a combination thereof. For Mg:Ag alloys or Mg:Yb alloys, the alloy composition by volume may be in the range of about 1:9 to about 9:1.

[0247] The second conductive coating 1372 and the third conductive coating 1373 may contain high vapor pressure materials, such as ytterbium (Yb), zinc (Zn), cadmium (Cd), and magnesium (Mg). In some embodiments, the second conductive coating 1372 and the third conductive coating 1373 may contain pure or substantially pure magnesium.

[0248] The auxiliary electrode 1381 may comprise substantially the same material as the second conductive coating 1372 and / or the third conductive coating 1373. In some embodiments, the auxiliary electrode 1381 may comprise magnesium. For example, the auxiliary electrode 1381 may comprise pure or substantially pure magnesium. In other instances, the auxiliary electrode 1381 may comprise Yb, Cd, and / or Zn.

[0249] In some embodiments, the thickness of the nucleation inhibition coatings 1361, 1362, and 1363 disposed in the emission regions 1331a, 1331b, and 1331c can vary according to the color or emission spectrum of the light emitted by each emission region. For example... Figure 34 and 35 As shown, the first nucleation inhibition coating 1361 may have a first nucleation inhibition coating thickness t n1 The second nucleation inhibition coating 1362 may have a second nucleation inhibition coating thickness t n2 Furthermore, the third nucleation inhibition coating 1363 can have a third nucleation inhibition coating thickness t. n3 The thickness t of the first nucleation inhibition coating n1 The thickness t of the second nucleation inhibition coating n2 and / or the thickness t of the third nucleation inhibition coating n3 They can be substantially the same. Alternatively, the thickness t of the first nucleation inhibition coating... n1 The thickness t of the second nucleation inhibition coating n2 and / or the thickness t of the third nucleation inhibition coating n3 They can be different from each other.

[0250] By independently adjusting the thickness of the nucleation suppression coating disposed in each emission region or subpixel, the optical microcavity effect in each emission region or subpixel can be further controlled. For example, the thickness of the nucleation suppression coating disposed on the blue subpixel can be less than the thickness of the nucleation suppression coating disposed on the green subpixel, and the thickness of the nucleation suppression coating disposed on the green subpixel can be less than the thickness of the nucleation suppression coating disposed on the red subpixel. As will be understood, by adjusting the thickness of the nucleation suppression coating and the conductive coating of each emission region or subpixel independently of other emission regions or subpixels, the optical microcavity effect of each emission region or subpixel can be controlled to an even greater extent.

[0251] The optical microcavity effect arises from the presence of optical interfaces created by numerous thin film layers and coatings with different refractive indices, which are used to construct optoelectronic devices such as OLEDs. Some factors influencing the optical microcavity effect observed in the device include the total path length (e.g., the total thickness of the device through which light emitted from the device travels before being externally coupled) and the refractive indices of the individual layers and coatings. It has been found that the optical microcavity effect in the emitting region (e.g., a sub-pixel) can be altered by adjusting the thickness of the cathode. This effect is generally attributable to a change in the total optical path length. It is further hypothesized that, particularly in the case of a transparent cathode formed by a thin coating, a change in the cathode thickness can alter the refractive index of the cathode in addition to the total optical path length. Furthermore, the optical path length can be tuned by changing the thickness of a nucleation suppression coating disposed in the emitting region, thereby modulating the optical microcavity effect.

[0252] The optical properties of the device can be affected by adjusting the optical microcavity effect, including the emission spectrum, intensity (e.g., luminous intensity), and angular distribution of the output light, including the angular dependence of the brightness and color shift of the output light.

[0253] Although various embodiments having two or three emission regions or subpixels have been described, it should be understood that the device can include any number of emission regions or subpixels. For example, the device can include multiple pixels, where each pixel includes two, three, or more subpixels. Furthermore, the specific arrangement of pixels or subpixels relative to other pixels or subpixels can vary depending on the device design. For example, it can be arranged according to, for example, RGB side-by-side, diamond, or... The known arrangement scheme is used to arrange the sub-pixels.

[0254] Conductive coating used for electrically connecting the electrode and the auxiliary electrode

[0255] In one aspect, an optoelectronic device is provided. The optoelectronic device includes a first electrode and a second electrode, a semiconductor layer disposed between the first electrode and the second electrode, a nucleation inhibition coating disposed on at least a portion of the second electrode, an auxiliary electrode, a patterned structure arranged to overlap with the auxiliary electrode to provide a shielding region, and a conductive coating disposed in the shielding region, the conductive coating being electrically connected to the auxiliary electrode and the second electrode.

[0256] Figure 36A photoelectric device 5011 according to one embodiment is shown. Device 5011 includes an emitting region 5012 arranged adjacent to a non-emitting region 5014. In some embodiments, the emitting region 5012 corresponds to a sub-pixel region of device 5011. The emitting region 5012 includes a first electrode 5030, a second electrode 5081, and a semiconductor layer 5071 disposed between the first electrode 5030 and the second electrode 5081. The first electrode 5030 is disposed on a surface 5015 of a substrate 5010. The substrate 5010 includes a TFT 5020 electrically connected to the first electrode 5030. The edge or periphery of the first electrode 5030 is generally covered by a pixel definition layer 5014. The non-emitting region 5014 includes an auxiliary electrode 5051 and a patterned structure 5061 arranged to overlap with the auxiliary electrode 5051. The patterned structure 5061 extends laterally to provide a shielding region 5042. For example, the patterned structure 5061 may be recessed on at least one side at or near the auxiliary electrode 5051 to provide a masking region. In the illustrated embodiment, the masking region 5042 corresponds to a region on the surface of the pixel definition layer 5041 that overlaps with the lateral extension of the patterned structure 5061. The non-emitting region 5014 further includes a conductive coating 5099 disposed in the masking region 5042. The conductive coating 5099 electrically connects the auxiliary electrode 5051 and the second electrode 5081. A nucleation inhibition coating 5091 is disposed in the emitting region 5012 and the non-emitting region 5014. The nucleation inhibition coating 5091 is disposed on the surface of the second electrode 5081. In some embodiments, the surface of the patterned structure 5061 is coated with a residual second electrode 5081' and a residual nucleation inhibition coating 5091'. The masking region 5042 is substantially without or not covered by the nucleation inhibition coating 5091 to allow the conductive coating 5099 to be deposited thereon.

[0257] Although Figure 36 One embodiment of such a device is shown, but it should be understood that various modifications can be made. For example, in some embodiments, the patterned structure 5061 may provide a masking region along at least two of its sides. In other embodiments, the patterned structure 5061 may be omitted, and the auxiliary electrode 5051 may include a recessed portion to provide a masking region 5042. In other embodiments, the auxiliary electrode 5051 and the conductive coating 5099 may be disposed directly on the surface 5015 of the substrate 5010, rather than on the pixel definition layer 5041.

[0258] Selective deposition of optical coatings

[0259] In one aspect, according to some embodiments, an apparatus is provided. The apparatus may be an optoelectronic device. In some embodiments, the apparatus includes a substrate, a nucleation inhibition coating, and an optical coating. The nucleation inhibition coating covers a first region of the substrate. The optical coating covers a second region of the substrate, and at least a portion of the nucleation inhibition coating is exposed from the optical coating, or there is substantially no optical coating or it is substantially not covered by the optical coating.

[0260] Optical coatings can be used to modulate the optical properties of light transmitted, emitted, or absorbed by a device, including plasmonic modes. For example, optical coatings can be used as filters, refractive index matching coatings, optical external coupling coatings, scattering layers, diffraction gratings, or portions thereof. In another instance, optical coatings can be used to modulate microcavity effects in optoelectronic devices by adjusting, for example, the total optical path length and / or refractive index. The optical properties of the device can be affected by modulating the optical microcavity effect, including the emission spectrum, intensity (e.g., luminous intensity), and angular distribution of the output light, including the angular dependence of the output light's brightness and color shift. In some embodiments, the optical coating can be a non-electric component. In other words, in such embodiments, the optical coating may not be configured to conduct or transmit current during normal device operation.

[0261] For example, any of the various embodiments of the methods described above for depositing conductive coatings can be used to form an optical coating. The optical coating may comprise a high vapor pressure material, such as ytterbium (Yb), zinc (Zn), cadmium (Cd), and magnesium (Mg). In some embodiments, the optical coating may comprise pure or substantially pure magnesium.

[0262] Thin film formation

[0263] During vapor deposition on a substrate surface, thin film formation involves nucleation and growth processes. In the initial stages of film formation, a sufficient number of vapor monomers (e.g., atoms or molecules) typically condense from the vapor phase to form initial nuclei on the surface. As the vapor monomers continue to bombard the surface, the size and density of these initial nuclei increase, forming small clusters or islands. After reaching saturated island density, adjacent islands typically begin to merge, increasing the average island size while decreasing the island density. This merging of adjacent islands continues until a substantially closed film is formed.

[0264] Thin films can be formed in three basic growth modes: 1) island growth (Volmer-Weber), 2) layer-by-layer growth (Frank-van der Merwe), and 3) Stranski-Krastanov growth. Island growth typically occurs when stable monomer clusters nucleate on the surface and grow to form discrete islands. This growth mode occurs when the interaction between monomers is stronger than the interaction between monomers and the surface.

[0265] Nucleation rate describes how many critical-size nuclei form on a surface per unit time. In the initial stages of film formation, due to the low nucleus density, nuclei cover a relatively small portion of the surface (e.g., there are large gaps / spaces between adjacent nuclei), making it unlikely for nuclei to grow from monomers directly impacting the surface. Therefore, the growth rate of critical nuclei typically depends on the rate at which adsorbed monomers (e.g., adsorbed atoms) migrate and attach to nearby nuclei on the surface.

[0266] After adsorption, the adsorbed atoms may desorb from the surface, or they may migrate a distance on the surface and then desorb, interacting with other adsorbed atoms to form small clusters or attaching to the growing nucleus. The average time that adsorbed atoms remain on the surface after initial adsorption is given by the following formula:

[0267]

[0268] In the equation above, v is the vibrational frequency of the adsorbed atoms on the surface, k is the Boltzmann constant, T is the temperature, and E des It involves the energy required to desorb adsorbed atoms from the surface. From this equation, we can see that E... des The lower the value, the easier it is for adsorbed atoms to desorb from the surface, and therefore the shorter the time adsorbed atoms remain on the surface. The average distance that adsorbed atoms can diffuse is given by the following formula:

[0269]

[0270] Where a0 is the lattice constant, E S It is the activation energy for surface diffusion. For E des Low values ​​and / or E S The high value of adsorbed atoms means that they will diffuse a short distance before desorption, making it unlikely that they will attach to the growing nucleus or interact with another adsorbed atom or cluster of adsorbed atoms.

[0271] In the initial stage of membrane formation, the adsorbed atoms may interact to form clusters, and the critical concentration of clusters per unit area is given by the following formula:

[0272]

[0273] Where E i N1 is the energy required to dissociate a critical cluster containing i adsorbed atoms into individual adsorbed atoms, n0 is the total density of adsorption sites, and N1 is the monomer density derived from the following formula:

[0274]

[0275] in It is the steam impact rate. Typically, i will depend on the crystal structure of the deposited material and will determine the critical cluster size for the formation of stable nuclei.

[0276] The critical monomer supply rate for the growth cluster is derived from the vapor impact rate and the average area that adsorbed atoms can diffuse before desorption:

[0277]

[0278] Therefore, the critical nucleation rate is derived from the combination of the above equations:

[0279]

[0280] As can be seen from the above equations, the desorption energy of adsorbed atoms is low and the diffusion activation energy of adsorbed atoms is high. Surfaces at high temperatures or subjected to low vapor impact rates will suppress the critical nucleation rate.

[0281] Substrate heterogeneity (e.g., defects, ledges, or step edges) can increase E des This leads to a higher nuclear density observed at these sites. Similarly, impurities or contamination on the surface may also increase E. des This leads to a higher nuclear density. For vapor deposition processes performed under high vacuum conditions, the type and density of contaminants on the surface are affected by the vacuum pressure and the residual gas components that constitute that pressure.

[0282] Under high vacuum conditions, the molecular flux (per square centimeter per second) impacting a surface is given by the following formula:

[0283]

[0284] Where P is pressure and M is molecular weight. Therefore, during vapor deposition, a higher partial pressure of reactive gases (e.g., H₂O) leads to a higher contamination density on the surface, resulting in E des The increase in ...

[0285] The useful parameter characterizing film nucleation and growth is the adhesion probability, which is derived from the following formula:

[0286]

[0287] Where N ads It is the number of adsorbed monomers retained on the surface (e.g., incorporated into the thin film), and N totalThis represents the total number of monomers impacting the surface. An adhesion probability of 1 indicates that all monomers impacting the surface are adsorbed and subsequently incorporated into the grown film. An adhesion probability of 0 indicates that all monomers impacting the surface are desorbed and no film forms on the surface. The adhesion probability of metals on various surfaces can be evaluated using various techniques for measuring adhesion probability, such as the dual quartz crystal microbalance (QCM) technique described by Walker et al., *Journal of Physical Chemistry* C 2007, 111, 765 (2006).

[0288] As the density of islands increases (e.g., by increasing the average film thickness), the adhesion probability may change. For example, a low initial adhesion probability may increase with increasing average film thickness. This can be understood based on the difference in adhesion probabilities between regions with no islands (bare substrate) and regions with high-density islands. For example, the adhesion probability of a monomer impacting an island surface may be close to 1.

[0289] Therefore, the initial adhesion probability S0 can be specified as the adhesion probability of the surface prior to the formation of any reasonably large number of critical nuclei. One measure of the initial adhesion probability can involve the adhesion probability of the material surface in the initial stage of material deposition, where the average thickness of the material deposited across the entire surface is equal to or less than a threshold. In the description of some embodiments, the threshold for the initial adhesion probability can be specified as 1 nm. The average adhesion probability is then derived by:

[0290]

[0291] Where S nuc It is the adhesion probability of the island-covered area, and A nuc It represents the percentage of the substrate surface area covered by the island.

[0292] Figure 38 An example of the energy distribution of adsorbed atoms on a substrate surface is shown. Specifically, Figure 38 The following energy distributions are shown: (1) adsorbed atoms escaping from local low-energy sites; (2) diffusion of adsorbed atoms on the surface; and (3) desorption of adsorbed atoms.

[0293] In (1), the local low-energy site can be any site on the substrate surface where adsorbed atoms are at a lower energy level. Typically, nucleation sites can be defects or anomalies on the surface substrate, such as step edges, chemical impurities, binding sites, or kinks. Once adsorbed atoms are trapped at a local low-energy site, there is usually an energy barrier before surface diffusion occurs. This energy barrier is... Figure 38 This is represented by ΔE in the diagram. If the energy barrier to escape a local low-energy site is large enough, the site can serve as a nucleation site.

[0294] In (2), adsorbed atoms can diffuse on the substrate surface. For example, in the case of localized absorbents, adsorbed atoms tend to oscillate near the minimum surface potential energy and migrate to adjacent positions until they are desorbed or incorporated into the grown film or islands formed by the adsorbed atom clusters. Figure 38 In the diagram, the activation energy related to surface diffusion of adsorbed atoms is represented as E. S .

[0295] In (3), the activation energy associated with the desorption of adsorbed atoms from the surface is expressed as E. des It should be understood that any adsorbed atoms that are not desorbed will remain on the substrate surface. For example, such adsorbed atoms may diffuse across the surface, be incorporated as part of a grown film or coating, or become part of clusters of adsorbed atoms that form islands on the surface.

[0296] based on Figure 38 The energy distribution shown suggests that it exhibits a relatively low desorption activation energy (E). des ) and / or a relatively high surface diffusion activation energy (E S Nucleation inhibition coating materials may be particularly advantageous for use in a variety of applications. For example, in some embodiments, the desorption activation energy (E) is... des Less than twice the heat energy (kJ) B Surface diffusion activation energy (ET) less than about 1.5 times the thermal energy, less than about 1.3 times the thermal energy, less than about 1.2 times the thermal energy, less than the thermal energy, less than about 0.8 times the thermal energy, or less than about 0.5 times the thermal energy may be particularly advantageous. In some embodiments, the surface diffusion activation energy (ET) is... S It may be particularly advantageous to have more than 1.5 times, 1.8 times, 2 times, 3 times, 5 times, 7 times, or 10 times the amount of heat energy.

[0297] While some embodiments have been described above with reference to the selective deposition of conductive coatings to form auxiliary electrodes for cathodes or common cathodes, it should be understood that similar materials and processes can be used in other embodiments to form anodes or auxiliary electrodes for anodes.

[0298] Nucleation inhibition coating

[0299] Suitable materials for forming nucleation inhibition coatings include those that exhibit or are characterized as having an initial adhesion probability to conductive coating materials that is no greater than or less than about 0.1 (or 10%) or no greater than or less than about 0.05, more particularly, no greater than or less than about 0.03, no greater than or less than about 0.02, no greater than or less than about 0.01, no greater than or less than about 0.08, no greater than or less than about 0.005, no greater than or less than about 0.003, no greater than or less than about 0.001, no greater than or less than about 0.0008, no greater than or less than about 0.0005, or no greater than or less than about 0.0001. Suitable materials for forming nucleation-promoting coatings include those that exhibit or are characterized as having an initial adhesion probability to conductive coating materials of at least about 0.6 (or 60%), at least about 0.7, at least about 0.75, at least about 0.8, at least about 0.9, at least about 0.93, at least about 0.95, at least about 0.98, or at least about 0.99.

[0300] Suitable nucleation inhibition materials include organic materials, such as small-molecule organic materials and organic polymers. Examples of suitable organic materials include polycyclic aromatic compounds, comprising organic molecules that optionally include one or more heteroatoms, such as nitrogen (N), sulfur (S), oxygen (O), phosphorus (P), and aluminum (Al). In some embodiments, the polycyclic aromatic compound comprises an organic molecule each comprising a core portion and at least one terminal portion bonded to the core portion. The number of terminal portions can be one or more, two or more, three or more, or four or more. In the case of two or more terminal portions, the terminal portions can be the same or different, or a subset of the terminal portions can be the same but different from at least one remaining terminal portion.

[0301] In some embodiments, at least one terminal portion is or includes a phenyl portion represented by the structure (IA):

[0302]

[0303] Typically, the phenyl moiety represented by (IA) can be unsubstituted or substituted. In some embodiments, the phenyl moiety represented by (IA) may be substituted by one or more substituents present in at least one of A1, A2, A3, A4, and A5, wherein the one or more substituents are independently selected from H, D (deuterium), F, Cl, alkyl including C1-C6 alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, fluoroalkoxy, and any combination of two or more thereof. In some embodiments, the one or more substituents are independently selected from: methyl, methoxy, ethyl, tert-butyl, fluoromethyl, difluoromethyl, trifluoromethyl, trifluoromethoxy, fluoroethyl, and polyfluoroethyl.

[0304] In some embodiments, at least one terminal portion is or includes a naphthyl moiety represented by the structure (IB):

[0305]

[0306] At least one of B1, B2, B3, B4, B5, B6, B7, and B8 represents a bond formed between the naphthyl moiety and the core moiety. Typically, the naphthyl moiety represented by (IB) can be unsubstituted or substituted. In some embodiments, the naphthyl moiety represented by (IB) can be substituted by one or more substituents present in at least one of B1, B2, B3, B4, B5, B6, B7, and B8, wherein the one or more substituents are independently selected from: H, D (deuterium), F, Cl, alkyl including C1-C6 alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, fluoroalkoxy, and any combination of two or more thereof. In some embodiments, the one or more substituents are independently selected from: methyl, methoxy, ethyl, tert-butyl, fluoromethyl, difluoromethyl, trifluoromethyl, trifluoromethoxy, fluoroethyl, and polyfluoroethyl. In some embodiments, the “B” substituent is the corresponding B' (B-apostrophe) substituent, and any B' substituent may have the value of the B substituent indicated herein.

[0307] In some embodiments, at least one end portion is or includes a frenulum portion represented by the following structure (IC):

[0308]

[0309] Among them, C1, C2, C3, C4, C5, C6, C7, C8, C9 and C 10 At least one of the terms represents a bond formed between the phenotype portion and the core portion. Typically, the phenotype portion represented by (IC) can be unsubstituted or substituted. In some embodiments, the phenotype portion represented by (IC) can be substituted by one or more substituents, said substituents being C1, C2, C3, C4, C5, C6, C7, C8, C9, and C6. 10 At least one of the following is present, wherein the one or more substituents are independently selected from: H, D (deuterium), F, Cl, alkyl including C1-C6 alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, fluoroalkoxy, and any combination of two or more thereof. In some embodiments, the one or more substituents are independently selected from: methyl, methoxy, ethyl, tert-butyl, fluoromethyl, difluoromethyl, trifluoromethyl, trifluoromethoxy, fluoroethyl, and polyfluoroethyl. In some embodiments, the “C” substituent is the corresponding C’ (C-apostrophe) substituent, and any C’ substituent may have the value of the C substituent indicated herein.

[0310] In some embodiments, at least one terminal portion is or includes an anthracene moiety represented by the structure (ID):

[0311]

[0312] Among them, D1, D2, D3, D4, D5, D6, D7, D8, D9 and D 10 At least one of them represents a bond formed between the phenanthrene moiety and the core moiety. Typically, the anthracene moiety represented by (ID) can be unsubstituted or substituted. In some embodiments, the anthracene moiety represented by (ID) can be substituted by one or more substituents, said substituents being D1, D2, D3, D4, D5, D6, D7, D8, D9, and D... 10 At least one of the following is present, wherein the one or more substituents are independently selected from: H, D (deuterium), F, Cl, alkyl including C1-C6 alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, fluoroalkoxy, and any combination of two or more thereof. In some embodiments, the one or more substituents are independently selected from: methyl, methoxy, ethyl, tert-butyl, fluoromethyl, difluoromethyl, trifluoromethyl, trifluoromethoxy, fluoroethyl, and polyfluoroethyl.

[0313] In some embodiments, at least one terminal portion is or includes a benzanthracene moiety represented by the structure (IE):

[0314]

[0315] Among them, E1, E2, E3, E4, E5, E6, E7, E8, E9, E 10 E 11 and E 12 At least one of the terms represents a bond formed between the benzanthracene moiety and the core moiety. Typically, the benzanthracene moiety represented by (IE) can be unsubstituted or substituted. In some embodiments, the benzanthracene moiety represented by (IE) can be substituted by one or more substituents, said substituents being E1, E2, E3, E4, E5, E6, E7, E8, E9, E... 10 E 11 and E 12 At least one of the following is present, wherein the one or more substituents are independently selected from H, D (deuterium), F, Cl, alkyl including C1-C6 alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, fluoroalkoxy, and any combination of two or more thereof. In some embodiments, the one or more substituents are independently selected from: methyl, methoxy, ethyl, tert-butyl, fluoromethyl, difluoromethyl, trifluoromethyl, trifluoromethoxy, fluoroethyl, and polyfluoroethyl.

[0316] In some embodiments, at least one terminal portion is or includes a pyrene portion represented by the structure (IF):

[0317]

[0318] Among them, F1, F2, F3, F4, F5, F6, F7, F8, F9 and F 10 At least one of the terms represents a bond formed between the pyrene moiety and the core moiety. Typically, the pyrene moiety represented by (IF) can be unsubstituted or substituted. In some embodiments, the pyrene moiety represented by (IF) can be substituted by one or more substituents, said substituents being F1, F2, F3, F4, F5, F6, F7, F8, F9, and F... 10 At least one of the following is present, wherein the one or more substituents are independently selected from: H, D (deuterium), F, Cl, alkyl including C1-C6 alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, fluoroalkoxy, and any combination of two or more thereof. In some embodiments, the one or more substituents are independently selected from: methyl, methoxy, ethyl, tert-butyl, fluoromethyl, difluoromethyl, trifluoromethyl, trifluoromethoxy, fluoroethyl, and polyfluoroethyl.

[0319] In some embodiments, at least one end portion is or includes a structure represented by (IG). Base part:

[0320]

[0321] Among them, G1, G2, G3, G4, G5, G6, G7, G8, G9, G 10 G 11 and G 12 At least one of them represents in The bonds formed between the base and core portions. Typically represented by (IG). The base portion can be unsubstituted or substituted. In some embodiments, it is represented by (IG). The base portion may be replaced by one or more substituents, wherein the substituents are G1, G2, G3, G4, G5, G6, G7, G8, G9, G... 10 G 11 and G 12At least one of the following is present, wherein the one or more substituents are independently selected from: H, D (deuterium), F, Cl, alkyl including C1-C6 alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, fluoroalkoxy, and any combination of two or more thereof. In some embodiments, the one or more substituents are independently selected from: methyl, methoxy, ethyl, tert-butyl, fluoromethyl, difluoromethyl, trifluoromethyl, trifluoromethoxy, fluoroethyl, and polyfluoroethyl.

[0322] In yet another embodiment, at least one terminal portion is or includes a polycyclic aromatic moiety having a fused ring structure, such as a fluorene moiety or a phenylene moiety (including those moiety containing multiple (e.g., 3, 4 or more) fused benzene rings). Examples of such moiety include spirodifluorene moiety, triphenylene moiety, diphenylfluorene moiety, dimethylfluorene moiety, difluorofluorene moiety, and any combination of two or more thereof.

[0323] In some embodiments, the polycyclic aromatic compound comprises an organic molecule each comprising a core portion and at least one terminal portion bonded to the core portion, wherein the core portion is or comprises an anthracene moiety represented by structure (II):

[0324]

[0325] In (II), one or more end portions are bonded to the anthracene core portion. For example, one, two, three, four, or more end portions may be bonded directly or indirectly (e.g., via a linker portion) to the anthracene core portion. In some embodiments, two independently selected end portions are bonded to the anthracene core portion. For example, one or more end portions may be independently bonded to one or more of positions 1-, 2-, 3-, 4-, 5-, 6-, 7-, 8-, 9-, and 10- as shown in (II) above. In some embodiments, the two independently selected end portions are bonded to the anthracene core portion at positions 9- and 10-. In some other embodiments, a third independently selected end portion is bonded to the anthracene core portion. For example, the third independently selected end portion may be bonded to positions 2-, 3-, 6-, or 7-. In yet another embodiment, a fourth independently selected end portion is bonded to the anthracene core portion at an unoccupied position selected from positions 2-, 3-, 6-, and 7-.

[0326] One or more terminal portions of the anthracene core portion bonded to (II) are or include portions represented by (IA), (IB), or (IC), (ID), (IE), (IF), (IG) as described above, or include polycyclic aromatic portions comprising fused ring structures. One or more terminal portions may be directly bonded to the core portion or may be bonded to the core portion via a linker portion. Examples of linker portions include -O- (where O represents an oxygen atom), -S- (where S represents a sulfur atom), and cyclic or acyclic hydrocarbon portions comprising one, two, three, four, or more carbon atoms, which may be unsubstituted or substituted, and may optionally include one or more heteroatoms. The bond between the core portion and one or more terminal portions may be, for example, a covalent bond. In embodiments where two or more terminal portions are bonded to the core portion, each of the two or more terminal portions may be chosen independently of each other. For example, the two or more terminal portions may be the same or different from each other. In one embodiment, the polycyclic aromatic compound comprises an organic molecule each comprising an anthracene core portion represented by (II). Each of the organic molecules comprises a first terminal portion in the form of a phenyl moiety represented by (IA), and a naphthyl moiety represented by (IB), a phenanthryl moiety represented by (IC), an anthraceneyl moiety represented by (ID), a benzanthraceneyl moiety represented by (IE), a pyrene moiety represented by (IF), or a phenyl group represented by (IG). A second terminal portion in the form of a base portion. For example, the first terminal portion may be bonded to a 1-, 9-, or 8-position, and the second terminal portion may be bonded to a 4-, 10-, or 5-position. The first and second terminal portions may be arranged symmetrically or asymmetrically relative to the anthracene core portion. For example, the first and second terminal portions may be arranged symmetrically by bonding the first and second terminal portions to positions 1- and 4-, 9- and 10-, or 8- and 5-, respectively. In another instance, the first and second terminal portions may be arranged asymmetrically by bonding the first and second terminal portions to positions 1- and 5-, or 8- and 4-, respectively. In some embodiments, one or more additional terminal portions may be bonded to the anthracene core portion. One or more additional terminal portions may each be bonded to one or more unoccupied positions of the anthracene core portion. For example, one or more additional terminal portions may each be bonded to a 2-, 3-, 6-, or 7-position.

[0327] In some embodiments, one or more carbon atoms in a polycyclic aromatic compound may be substituted with heteroatoms. For example, one or more carbon atoms in the terminal portion and / or the core portion may be substituted with heteroatoms. Examples of such heteroatom substitution include, but are not limited to, sulfur and nitrogen.

[0328] In some embodiments, the polycyclic aromatic compound contains at least one fluorine (F) atom.

[0329] Examples of polycyclic aromatic compounds containing an anthracene core are provided below.

[0330]

[0331]

[0332]

[0333]

[0334]

[0335]

[0336]

[0337]

[0338]

[0339]

[0340]

[0341] In the portion represented by structures A1 to A66, X1 to X 10 This indicates the presence of one or more substituents. For example, one or more substituents X1 to X... 10 The substituents can be independently selected from: H, D (deuterium), F, Cl, alkyl groups including C1-C4 alkyl groups, cycloalkyl groups, silyl groups, fluoroalkyl groups, aralkyl groups, aryl groups, heteroaryl groups, alkoxy groups, fluoroalkoxy groups, and any combination of two or more thereof. Furthermore, one or more substituents can be independently selected from: methyl, methoxy, ethyl, tert-butyl, fluoromethyl, difluoromethyl, trifluoromethyl, trifluoromethoxy, fluoroethyl, and polyfluoroethyl. Other substituents A1, A2, A3, A4, A5, B1, B2, B3, B4, B5, B6, B provided above with respect to (IA), (IB), or (IC), (ID), (IE), (IF), (IG) are also included. 7、 B8 (and the corresponding B' parts of B1-B8), C1, C2, C3, C4, C5, C6, C7, C8, C9, C 10 (and C1-C) 10 (corresponding to C'), D1, D2, D3, D4, D5, D6, D7, D8, D9, D 10,E1,E2,E3,E4,E5,E6,E7,E8,E9,E 10 E 11 E 12 ,F1,F2,F3,F4,F5,F6,F7,F8,F9,F 10 ,G1,G2,G3,G4,G5,G6,G7,G8,G9,G 10 G 11 and G 12 The description applies to the corresponding substituents represented by A1 to A66.

[0342] Examples of alkyl substituents include C1-C6 alkyl groups, which can be straight-chain or branched. For example, in the case of C4-C6 alkyl groups, branched alkyl groups may be preferred in some cases.

[0343] In one instance where a portion is represented by structure A1, at least one of B1, B2, B3, B5, B6, B7, B8, X1, X2, X3, X4, X5, X6, X7, X8, A2, A3, A4, A5, and A6 is F. In another instance, at least one of B1, B2, B3, B5, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is F. In yet another instance, at least one of B1, B2, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is F. In yet another instance, at least one of B1, B2, B6, B7, B8, X2, X3, X6, X7, A3, A4, and A5 is F. In yet another instance, at least one of B1, B2, B6, B7, B8, X2, X3, X6, X7, A2, and A6 is F. For example, at most 10, 6, 5, 3, or 1 F atom can be present in such a structure.

[0344] In another example where the structure is partially represented by A1, at least one of B1, B2, B3, B5, B6, B7, B8, X1, X2, X3, X4, X5, X6, X7, X8, A2, A3, A4, A5, and A6 is an alkyl group. In yet another example, at least one of B1, B2, B3, B5, B6, B7, B8, X1, X2, X3, X6, X7, X8, A2, A3, A4, A5, and A6 is an alkyl group. In yet another example, at least one of B1, B2, B6, B7, B8, X1, X2, X3, X6, X7, X8, A3, A4, and A5 is an alkyl group. In yet another example, at least one of A3, A4, and A5 is an alkyl group. For example, at most 6, 5, 3, or 1 alkyl substituent may be present in this structure.

[0345] In another example where the structure is partially represented by A1, at least one of B1, B2, B3, B5, B6, B7, B8, X1, X2, X3, X4, X5, X6, X7, X8, A2, A3, A4, A5, and A6 is a fluoroalkyl or fluoroalkoxy group. In another example, at least one of B1, B2, B3, B5, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is a fluoroalkyl or fluoroalkoxy group. In another example, at least one of B1, B2, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is a fluoroalkyl or fluoroalkoxy group. In another example, at least one of A3, A4, and A5 is a fluoroalkyl or fluoroalkoxy group. For example, at most 5, 3, or 1 such substituents may be present in this structure.

[0346] In another example where the structure is partially represented by A1, at least one of B1, B2, B3, B5, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is aryl, aralkyl, or heteroaryl. In another example, at least one of B2, B3, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is aryl, aralkyl, or heteroaryl. In another example, at least one of B2, B3, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is aryl, aralkyl, or heteroaryl. In another example, at least one of B2, B3, B8, X2, X3, X6, X7, A2, A3, A5, and A6 is aryl, aralkyl, or heteroaryl. In another example, at least one of B2, B3, B8, X2, X3, X6, X7, A2, and A6 is an aryl, aralkyl, or heteroaryl group. For example, up to 8, 6, 4, 3, or 1 such substituent may be present in this structure.

[0347] In one instance where the structure A2 is partially represented, at least one of B1, B2, B4, B5, B6, B7, B8, X1, X2, X3, X4, X5, X6, X7, X8, A2, A3, A4, A5, and A6 is F. In another instance, at least one of B1, B2, B4, B5, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is F. In another instance, at least one of B1, B5, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is F. In yet another instance, at least one of B1, B5, B6, B7, B8, X2, X3, X6, X7, A3, A4, and A5 is F. For example, at most 10, 6, 5, 3 or 1 F atoms can exist in such a structure.

[0348] In another example where the structure is partially represented by A2, at least one of B1, B2, B4, B5, B6, B7, B8, X1, X2, X3, X4, X5, X6, X7, X8, A2, A3, A4, A5, and A6 is an alkyl group. In another example, at least one of B1, B2, B4, B5, B6, B7, B8, X1, X2, X3, X6, X7, X8, A2, A3, A4, A5, and A6 is an alkyl group. In another example, at least one of B1, B5, B6, B7, B8, X1, X2, X3, X6, X7, X8, A2, A3, A4, A5, and A6 is an alkyl group. In another example, at least one of A3, A4, and A5 is an alkyl group. For example, at most 6, 5, 3, or 1 such substituents may be present in this structure.

[0349] In another example where the structure is partially represented by A2, at least one of B1, B2, B4, B5, B6, B7, B8, X1, X2, X3, X4, X5, X6, X7, X8, A2, A3, A4, A5, and A6 is a fluoroalkyl or fluoroalkoxy group. In another example, at least one of B1, B2, B4, B5, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is a fluoroalkyl or fluoroalkoxy group. In yet another example, at least one of B1, B5, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is a fluoroalkyl or fluoroalkoxy group. In another example, at least one of B1, B5, B6, B7, B8, X2, X3, X6, X7, A3, A4, and A5 is a fluoroalkyl or fluoroalkoxy group. For example, up to 5, 3, or 1 such substituents may be present in this structure.

[0350] In another example where the structure is partially represented by A2, at least one of B1, B2, B4, B5, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is aryl, aralkyl, or heteroaryl. In another example, at least one of B1, B5, B6, B7, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is aryl, aralkyl, or heteroaryl. In another example, at least one of B5, B6, B8, X2, X3, X6, X7, A2, and A6 is aryl, aralkyl, or heteroaryl. In another example, at least one of B5, B6, B8, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is aryl, aralkyl, or heteroaryl. For example, at most 8, 6, 4, 3 or 1 such substituents can exist in this structure.

[0351] In one instance where part of it is represented by structure A3, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of X1, X2, X3, X4, X5, X6, X7, X8, A2, A3, A4, A5, and A6 is F. In another instance, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is F. In another instance, at least one of A3, A4, and A5 is F. For example, at most 12, 10, 6, 5, 3, or 1 such substituents may be present in this structure.

[0352] In another instance where part of it is represented by structure A3, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, C8, A2, A3, A4, A5, and A6 is an alkyl or alkoxy group. In another example, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is an alkyl group. In another example, at least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, A3, A4, and A5 is an alkyl group. For example, at most 6, 5, 3, or 1 such substituents may be present in this structure.

[0353] In another instance where part of it is represented by structure A3, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, C8, A2, A3, A4, A5, and A6 is a fluoroalkyl or fluoroalkoxy group. In another example, C1, C2, C3, C4, C5, C6, C7, C8, C 10At least one of C1, C2, C3, C4, C5, C6, C7, A2, A3, A4, A5, and A6 is a fluoroalkyl or fluoroalkoxy group. In another example, at least one of A3, A4, and A5 is a fluoroalkyl or fluoroalkoxy group. For example, at most 5, 3, or 1 such substituents may be present in this structure.

[0354] In another instance where part of it is represented by structure A3, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, A2, A3, A4, A5, and A6 is an aryl, aralkyl, or heteroaryl group. In another example, at least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, A2, and A6 is an aryl, aralkyl, or heteroaryl group. For example, at most 8, 6, 4, 3, or 1 such substituents may be present in this structure.

[0355] In one instance where part of it is represented by structure A4, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of X1, X2, X3, X4, X5, X6, X7, X8, B1, B2, B4, B5, B6, B7, and B8 is F. In another instance, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B4, B5, B6, B7, and B8 is F. In another instance, at least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B5, B6, B7, and B8 is F. For example, at most 14, 10, 8, 6, 4, 3, or 1 such substituents may be present in this structure.

[0356] In another instance where part of it is represented by structure A4, C1, C2, C3, C4, C5, C6, C7, C8, C 10At least one of C1, C2, C3, C4, C5, C6, C7, C8, B1, B2, B4, B5, B6, B7, and B8 is an alkyl or fluoroalkyl group. In another example, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, C8, B1, B2, B4, B5, B6, B7, and B8 is an alkyl or fluoroalkyl group. In another example, at least one of B1, B5, B6, B7, and B8 is an alkyl or fluoroalkyl group. In yet another example, at least one of B1, B5, B6, B7, and B8 is an alkyl or fluoroalkyl group. For example, up to 6, 5, 3, or 1 such substituents may be present in this structure.

[0357] In another instance where part of it is represented by structure A4, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B4, B5, B6, B7, and B8 is aryl, aralkyl, or heteroaryl. In another example, at least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B4, B5, B6, B7, and B8 is aryl, aralkyl, or heteroaryl. In another example, at least one of C1, C2, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B4, B5, B6, B7, and B8 is aryl, aralkyl, or heteroaryl. For example, at most 8, 6, 4, 3 or 1 such substituents can exist in this structure.

[0358] In another instance where part of it is represented by structure A4, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, C8, B1, B2, B4, B5, B6, B7, and B8 is a fluoroalkoxy group. In another example, C1, C2, C3, C4, C5, C6, C7, C8, C 10At least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B4, B5, B6, B7, and B8 is a fluoroalkoxy group. In another example, at least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B4, B5, B6, B7, and B8 is a fluoroalkoxy group. For example, at most 7, 5, 3, or 1 such substituents may be present in this structure.

[0359] In one instance where part of it is represented by structure A5, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of X1, X2, X3, X4, X5, X6, X7, X8, B1, B2, B3, B5, B6, B7, and B8 is F. In another instance, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B3, B5, B6, B7, and B8 is F. In another instance, at least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B6, B7, and B8 is F. In yet another instance, at least one of B1, B2, B7, and B8 is F. For example, at most 16, 10, 6, 5, 3, or 1 such substituents may be present in this structure.

[0360] In another instance where part of it is represented by structure A5, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, C8, B1, B2, B3, B5, B6, B7, and B8 is an alkyl group. In another example, C1, C2, C3, C4, C5, C6, C7, C8, C 10At least one of C1, C2, C3, C4, C5, C6, C7, C8, B1, B2, B3, B5, B6, B7, and B8 is an alkyl group. In another example, at least one of C1, C2, C3, C4, C5, C6, C7, C1, B2, B6, B7, and B8 is an alkyl group. For example, at most 10, 6, 5, 3, or 1 such substituents may be present in this structure.

[0361] In another instance where part of it is represented by structure A5, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, C8, B1, B2, B3, B5, B6, B7, and B8 is a fluoroalkyl or fluoroalkoxy group. In another example, C1, C2, C3, C4, C5, C6, C7, C8, C 10 At least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B3, B5, B6, B7, and B8 is a fluoroalkyl or fluoroalkoxy group. In another example, at least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B6, B7, and B8 is a fluoroalkyl or fluoroalkoxy group. In yet another example, at least one of B1, B2, B7, and B8 is a fluoroalkyl or fluoroalkoxy group. For example, at most 8, 5, 3, or 1 such substituents may be present in this structure.

[0362] In another instance where part of it is represented by structure A5, C1, C2, C3, C4, C5, C6, C7, C8, C 10At least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B3, B5, B6, B7, and B8 is aryl, aralkyl, or heteroaryl. In another example, at least one of C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B3, B6, B7, and B8 is aryl, aralkyl, or heteroaryl. In another example, at least one of C1, C2, C4, C5, C6, C7, X2, X3, X6, X7, B1, B2, B3, B6, B7, and B8 is aryl, aralkyl, or heteroaryl. For example, at most 8, 6, 4, 3 or 1 such substituents can exist in this structure.

[0363] In one instance where part of it is represented by structure A6, C1, C2, C3, C4, C5, C6, C7, C8, C 10 X1, X2, X3, X4, X5, X6, X7, X8, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of them is F. In another instance, C1, C2, C3, C4, C5, C6, C7, C8, C 10 X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of them is F. In the other, C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of them is F. In another instance, C3, C4, C5, C6, X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of them is F. In another instance, at least one of C3, C4, C5, C6, X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, and C'7 is F. For example, at most 18, 12, 10, 6, 5, 3, or 1 such substituents may be present in such a structure.

[0364] In another instance where part of it is represented by structure A6, C1, C2, C3, C4, C5, C6, C7, C8, C 10X1, X2, X3, X4, X5, X6, X7, X8, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of them is an alkyl group. In another example, C1, C2, C3, C4, C5, C6, C7, C8, C 10 X1, X2, X3, X6, X7, X8, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of them is an alkyl group. In another example, C1, C2, C3, C4, C5, C6, C7, X1, X2, X3, X6, X7, X8, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of the following is an alkyl group. In another example, at least one of C1, C2, C3, C4, C5, C6, C7, X1, X2, X3, X6, X7, X8, C'1, C'2, C'3, C'4, C'5, C'6, and C'7 is an alkyl group. For example, at most 8, 6, 5, 3, or 1 such substituents may be present in this structure.

[0365] In another instance where part of it is represented by structure A6, C1, C2, C3, C4, C5, C6, C7, C8, C 10 X1, X2, X3, X4, X5, X6, X7, X8, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of them is a fluoroalkyl or fluoroalkoxy group. In another example, C1, C2, C3, C4, C5, C6, C7, C8, C 10 X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of them is a fluoroalkyl or fluoroalkoxy group. In another example, C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of them is a fluoroalkyl or fluoroalkoxy group. In another example, C3, C4, C5, C6, X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10At least one of them is a fluoroalkyl or fluoroalkoxy group. In another example, at least one of C3, C4, C5, C6, X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, and C'7 is a fluoroalkyl or fluoroalkoxy group. For example, up to 8, 5, 3, or 1 such substituents may be present in such a structure.

[0366] In another instance where part of it is represented by structure A6, C1, C2, C3, C4, C5, C6, C7, C8, C 10 X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8 and C' 10 At least one of them is aryl, aralkyl, or heteroaryl. In another example, C1, C2, C3, C4, C5, C6, C7, X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8, and C' 10 At least one of them is aryl, aralkyl, or heteroaryl. In another example, C1, C2, C4, C5, C6, C7, X2, X3, X6, X7, C'1, C'2, C'3, C'4, C'5, C'6, C'7, C'8, and C' 10 At least one of them is aryl, aralkyl, or heteroaryl. In another example, C1, C2, C4, C5, C6, C7, X2, X3, X6, X7, C'8, and C' 10 At least one of them is aryl, aralkyl, or heteroaryl. For example, up to 8, 6, 4, 3, or 1 such substituent may be present in such a structure.

[0367] Without being bound by any particular theory, it is generally assumed that molecules with one or more of the following characteristics may be particularly suitable for forming nucleation-inhibiting coatings: (i) relatively low symmetry in their molecular structure; (ii) bonds with relatively high rotational energy barriers; (iii) relatively large optical gaps; and (iv) relatively low reactivity with materials forming conductive coatings. For example, it is assumed that for molecular structures containing naphthyl terminal moieties, it is generally preferred that these moieties be bonded directly or indirectly to the core moieties at the 1- or 4-position rather than at the 2- or 3-position. Such a configuration may help increase the rotational energy barrier of the naphthyl terminal moieties. In another example, it is assumed that for molecular structures containing phenanthrene moieties, it is generally preferred that these moieties be bonded directly or indirectly to the core groups at the 9- or 10-position rather than at the 1- or 3-position, which is still better than at the 2- or 7-position, to increase the rotational energy barrier of the phenanthrene moieties. In some embodiments, the nucleation inhibition coating comprises molecules exhibiting an optical gap greater than about 2.5 eV, greater than about 2.6 eV, greater than about 2.7 eV, or greater than about 2.8 eV. Generally, molecules with larger optical gaps reduce light absorption in the visible portion of the electromagnetic spectrum and are therefore preferred in at least some applications.

[0368] In some embodiments, the polycyclic aromatic compound contains one or more fluorine atoms. For example, the polycyclic aromatic compound may contain one, two, three, four, or more fluorine atoms. In some embodiments, the polycyclic aromatic compound contains one to three fluorine atoms. Other examples of polycyclic aromatic compounds containing an anthracene core are provided below.

[0369]

[0370]

[0371]

[0372]

[0373]

[0374]

[0375]

[0376]

[0377]

[0378]

[0379]

[0380]

[0381]

[0382]

[0383]

[0384]

[0385]

[0386]

[0387]

[0388]

[0389]

[0390]

[0391]

[0392]

[0393]

[0394]

[0395]

[0396]

[0397]

[0398]

[0399]

[0400]

[0401] Suitable nucleation inhibition materials include polymeric materials. Examples of such polymeric materials include: fluoropolymers, including but not limited to perfluoropolymers and polytetrafluoroethylene (PTFE); polyvinyl biphenyl; polyvinyl carbazole (PVK); and polymers formed by polymerizing a plurality of the above-mentioned polycyclic aromatic compounds. In another example, the polymeric material includes a polymer formed by polymerizing a plurality of monomers, wherein at least one monomer includes a terminal portion, said terminal portion being or including portions represented by (IA), (IB), or (IC), (ID), (IE), (IF), (IG) as described above, or a polycyclic aromatic portion comprising a fused ring structure.

[0402] The following examples will now be used to illustrate and describe aspects of some embodiments, which are not intended to limit the scope of this disclosure in any way.

[0403] Example

[0404] Synthesis of Compound 1 (“SF13”): 9-(naphth-1-yl)-10-phenylanthracene. The following reagents were mixed in a 500 mL reaction vessel: 9-bromo-10-(naphth-1-yl)anthracene (1.500 g, 3.91 mmol); tetrakis(triphenylphosphine)palladium(O) (Pd(PPh3)4, 0.678 g, 0.587 mmol); potassium carbonate (K2CO3, 1.623 g, 11.7 mmol); and 0.0782 mol boric acid. In this example, phenylboronic acid (0.954 g) was used as the boric acid. The reaction vessel containing the mixture was placed on a heated plate and stirred with a magnetic stirrer. The reaction vessel was also connected to a water condenser. 300 mL solvent mixtures containing toluene, ethanol, and water in a volume ratio of 20:5:3 were prepared separately in round-bottom flasks and stirred thoroughly. The flask containing the solvent mixture was sealed and degassed with N2 for at least 30 minutes. The solvent mixture was then transferred from the round-bottom flask to the reaction vessel using a sleeve, without exposure to air. After all solvent mixture had been transferred, the reaction vessel was purged with nitrogen and heated to 65°C while stirring at approximately 1200 RPM, and reacted under nitrogen for at least 12 hours. Once the reaction was confirmed to be complete, the mixture was cooled to room temperature, and the solvent mixture was removed using a vacuum rotary evaporator. The contents of the flask were then redissolved in dichloromethane (DCM) and washed four times with 500 mL of 1 M NaOH solution, followed by two washes with 500 mL of water. The organic phase was washed with magnesium sulfate and filtered. The resulting product was purified twice by passing it through a silica gel stopper column under vacuum. The DCM solvent was removed to produce a powdered product. The powdered product was then further purified by gradient sublimation under reduced pressure of 20–50 mTorr using CO2 as the carrier gas. The yield after purification using the silica gel stopper column was 0.940 g (31.5%). The yield of the sublimation step was approximately 74%. 1H NMR(600MHz,CD2Cl2)δ8.14(ddd,J=8.3,3.3,0.9Hz,1H),8.11-8.04(m,1H),7.81-7.59(m,7H),7.59 -7.51(m,2H),7.52-7.41(m,2H),7.41-7.31(m,2H),7.33-7.20(m,3H),7.15(dt,J=8.5,1.0Hz,1H). λ Abs = 376.1nm (DCM)

[0405] Synthesis of Compound 2 (“SF360”): 9-(naphthyl-1-yl)-10-4-tolylphenylanthracene. Compound 2 was synthesized using the same procedure as Compound 1 described above, except that 4-tolylphenylboronic acid (1.064 g) was used as the boric acid reactant. The yield after purification using a silica gel stopper column was 1.176 g (38.0%). The yield of the sublimation step was approximately 81%. 1 H NMR(400MHz, CD2Cl2)δ8.09(d,J=8.3Hz,1H),8.04(d,J=8.2Hz,1H),7.81-7.68(m,3 H),7.57(dd,J=7.0,1.3Hz,1H),7.52-7.42(m,4H),7.26-7.17(m,3H),2.55(s,3H). λ Abs =376.6nm(DCM),λ fluo =nm (toluene).

[0406] Synthesis of Compound 3 (“SF361”): 9-(naphthyl-1-yl)-10-4-fluorophenylanthracene. Compound 3 was synthesized using the same procedure as Compound 1 described above, except that 4-fluorophenylboronic acid (1.095 g) was used as the boric acid reactant. The yield after purification using a silica gel column stopper was 1.064 g (34.1%). The yield of the sublimation step was approximately 74%. 1 H NMR(600MHz, CD2Cl2)δ8.14(dt,J=8.3,1.1Hz,1H),8.08(dt,J=8.3,0.9Hz,1H),7.80-7.73(m,3H),7.63-7.56(m,2H),7.56-7 .51(m,2H),7.45(ddd,J=8.8,1.3,0.8Hz,2H),7.43-7.36(m,4H),7.27(dddd,J=8.0,6.3,5.0,1.3Hz,3H),7.15-7.12(m,1H). λ Abs = 375.6nm (DCM).

[0407] Synthesis of Compound 4 (“SF359”): 9-(naphthyl-1-yl)-10-4-trifluoromethylphenylanthracene. Compound 4 was synthesized using the same procedure as Compound 1 described above, except that 4-trifluoromethylphenylboronic acid (1.487 g) was used as the boric acid reactant. The yield after purification using a silica gel stopper column was 0.899 g (25.6%). The yield of the sublimation step was approximately 74%. 1 H NMR (600MHz, CD2Cl2) δ8.15 (dd, J=8.3, 1.1Hz, 1H), 8.09 (dt, J=8.4, 0.9Hz, 1H ),8.02-7.91(m,2H),7.83-7.74(m,2H),7.74-7.66(m,3H),7.62(dd,J=6.8,1 .2Hz,1H),7.55(ddd,J=8.1,6.6,1.2Hz,1H),7.47(dt,J=8.9,1.0Hz,2H),7.3 9(ddd,J=8.9,6.4,1.3Hz,2H),7.32-7.22(m,3H),7.14(dd,J=8.5,1.1Hz,1H). λ Abs = 375.3nm (DCM).

[0408] Synthesis of Compound 5 (“SF16”): 9-(naphthyl-1-yl)-10-4-methoxyphenylanthracene. Compound 5 was synthesized using the same procedure as Compound 1 described above, except that 4-methoxyphenylboronic acid (1.189 g) was used as the boric acid reactant. The yield after purification using a silica gel stopper column was 1.387 g (43.2%). The yield of the sublimation step was approximately 74%. 1 H NMR(600MHz, CD2Cl2)δ8.14(dt,J=8.3,1.1Hz,1H),7.85-7.67(m,4H),7.63-7.53(m,2H),7.52(d,J=1.4Hz,1H),7.52- 7.44(m,3H),7.44-7.41(m,1H),7.37(ddd,J=8.9,6.4,1.3Hz,2H),7.30-7.18(m,6H),7.16-7.08(m,2H),4.01(s,3H). λ Abs = 377.4nm (DCM).

[0409] Compound 6 (“SF358”): Synthesis of 9-(3-trifluoromethylphenyl)-10-(naphth-1-yl)anthracene. Compound 6 was synthesized using the same procedure as Compound 1 described above, except that 3-trifluoromethylphenylboronic acid (1.49 g) was used as the boric acid reactant. The yield after purification using a silica gel plug column was 1.14 g. The yield of the sublimation step was approximately 79%. The GC / MS elution time was 5.53 min, and the abundance was 1.1 × 10⁻⁶. 6 . 1 H NMR (400MHz, CDCl3) δ8.06(d,J=8.2Hz,1H),8.01(d,J=8.3Hz,1H),7.86-7.67(m,5H),7.61(d,J=8.8Hz,2 H),7.55(d,J=6.3Hz,1H),7.52-7.41(m,3H),7.37-7.30(m,2H),7.27-7.18(m,3H),7.13(t,J=7.6Hz,1H). λAbs=397nm(DCM), λfluo=411nm(DCM).

[0410] Synthesis of Compound 7 (“SF4”): 9-(3,4,5-trifluorophenyl)-10-(naphth-1-yl)anthracene. Compound 7 was synthesized using the same procedure as Compound 1 described above, except that 3,4,5-trifluorophenylboronic acid (1.38 g) was used as the boric acid reactant. The yield after purification using a silica gel column stopper was 1.01 g. The yield of the sublimation step was approximately 82%. The GC / MS elution time was 5.707 min, and the abundance was 5.0 × 10⁻⁶. 6 . 1 H NMR (400MHz, CDCl3) δ8.06 (d, J = 8.3Hz, 1H), 8.01 (d, J = 8.2Hz, 1H), 7.73-7.61 (m, 3H), 7.56-7.32 (m, 5H), 7.27-7.06 (m, 5H). λAbs=396nm(DCM), λfluo=430nm(DCM).

[0411] Synthesis of Compound 8 (“SF25”): 9-(2-fluorophenyl)-10-(naphth-1-yl)anthracene. Compound 8 was synthesized using the same procedure as Compound 1 described above, except that 2-fluorophenylboronic acid (1.10 g) was used as the boric acid reactant. The yield after purification using a silica gel column stopper was 1.32 g. The yield of the sublimation step was approximately 81%. The GC / MS elution time was 6.475 min, and the abundance was 8.4 × 10⁻⁶. 6 . 1H NMR (400MHz, CDCl3) δ8.06 (d, J = 8.1 Hz, 1H), 8.00 (d, J = 8.2 Hz, 1H), 7.68 (d, J = 9.0 Hz, 3H), 7.46 (dddd, J = 60.9, 29.3, 13.0, 7.7 Hz, 10H), 7.25-7.11 (m, 4H). λAbs=397nm(DCM), λfluo=407nm(DCM).

[0412] Compound 9 (“SF316”): Synthesis of 9-(4-trifluoromethylphenyl)-10-(naphth-2-yl)anthracene. The following reagents were mixed in a 1 L reaction vessel: 9-bromo-10-(naphth-2-yl)anthracene (0.853 g, 2.23 mmol); tetrakis(triphenylphosphine)palladium (Pd(PPh3)4, 0.385 g, 15 mol%); potassium carbonate (K2CO3, 0.923 g, 6.69 mmol); and 4.46 mmol boric acid. In this example, 4-trifluoromethylphenylboronic acid (0.845 g) was used as the boric acid. The reaction vessel containing the mixture was placed on a heated plate and stirred using a magnetic stirrer. The reaction vessel was also connected to a water condenser. 191 mL solvent mixtures containing toluene, ethanol, and water in a volume ratio of 6.6:3.3:1 were prepared separately in round-bottom flasks and thoroughly stirred. The flask containing the solvent mixture was sealed and degassed with N2 for at least 30 minutes. The solvent mixture was then transferred from the round-bottom flask to the reaction vessel using a sleeve, without exposure to air. After all solvent mixture had been transferred, the reaction vessel was purged with nitrogen and heated to 65°C while stirring at approximately 1200 RPM, and reacted under nitrogen for at least 12 hours. Once the reaction was confirmed to be complete, the mixture was cooled to room temperature, and the solvent mixture was removed using a vacuum rotary evaporator. The contents of the flask were then redissolved in dichloromethane (DCM) and washed with 1M NaOH solution, followed by washing with water. The organic phase was washed with magnesium sulfate and filtered. The resulting product was purified by passing it through a silica gel column under vacuum. The DCM solvent was removed to produce a powdered product. The powdered product was then further purified by gradient sublimation under reduced pressure of 20–50 mTorr using CO2 as the carrier gas. 1 H NMR (CDCl3): 8.09 (d, J=8.58Hz, 1H), 8.04 (m, 1H), 7.98 (s, 1H), 7.91 (m, 1H), 7.74 (m, 2H), 7.63 (m, 7H), 7.35 (m, 4H). 19F NMR (CDCl3): 62.32 (s). λAbs = 397 nm (DCM), λfluo = 423 nm (DCM). Yield (purified) = 61%, Yield (sublimation) = 88%. MS (m / z, %): 436.3 (M+, 100). GC retention time = 7.30 min.

[0413] Compound 10 (“SF317”): Synthesis of 9-(3,4,5-trifluorophenyl)-10-(naphth-2-yl)anthracene. Compound 10 was synthesized using the same procedure as Compound 9 described above, except that 3,4,5-trifluorophenylboronic acid (0.809 g, 4.60 mmol) was used as the boric acid reactant and combined with the following substances: 9-bromo-10-(naphth-2-yl)anthracene (0.882 g, 2.30 mmol), 3,4,5-trifluorophenylboronic acid (0.809 g, 4.60 mmol), potassium carbonate (0.954 g, 6.90 mmol), and tetra(triphenylphosphine)palladium (0.399 g, 15 mol%). 1 H NMR (CDCl3): 8.09 (d, J = 8.58 Hz, 1H), 8.04 (m, 1H), 7.97 (s, 1H), 7.93 (m, 1H), 7.74 (m, 2H), 7.62 (m, 5H), 7.38 (m, 4H), 7.16 (m, 2H). 13 C NMR(CDCl3):152.76,150.26138.35,136.28,133.52,132.98,130.32,130.12,129.77,129.43,12 8.25,128.09,127.28,126.72,126.52,126.13,126.02,125.48,115.92,115.86,115.77,115.72. 19 F NMR (CDCl3): 134.38 (m), 161.64 (m). λAbs = 395 nm (DCM), λfluo = 418 nm (DCM). Yield (purified) = 75%, Yield (sublimation) = 91%. MS (m / z, %): 434.3 (M+, 100). GC retention time = 7.07 min.

[0414] Compound 11 (“SF319”): Synthesis of 9-(3-trifluoromethylphenyl)-10-(naphth-2-yl)anthracene. Compound 11 was synthesized using the same procedure as Compound 9 described above, except for the amount of solvent used (toluene / ethanol / water, 287 mL), and the use of 3-trifluoromethylphenylboronic acid (1.268 g, 6.68 mmol) as boric acid, combined with 9-bromo-10-(naphth-2-yl)anthracene (1.280 g, 3.34 mmol), 3-trifluorophenylboronic acid (1.268 g, 6.68 mmol), potassium carbonate (1.385 g, 10.02 mmol), and tetra(triphenylphosphine)palladium (0.578 g, 15 mol%). 1 H NMR (CDCl3): 8.10 (d, J = 8.73Hz, 1H), 8.04 (m, 1H), 7.99 (s, 1H), 7.93 (m, 1H), 7.78 (m, 6H), 7.62 (m, 5H), 7.35 (m, 4H). 13 C NMR(CDCl3):140.17,137.87,136.47,135.34,134.91,133.54,132.95,131.38,131.06,130.36,130.1 7,129.97,129.56,129.18,128.23,128.08,127.38,126.66,126.53,126.47,125.74,125.38,124.65. 19 F NMR (CDCl3): 62.34 (s). λAbs = 395 nm (DCM), λfluo = 419 nm (DCM). Yield (purified) = 75%, Yield (sublimation) = 90%. MS (m / z, %): 448.3 (M+, 100). GC retention time = 6.89 min.

[0415] Compound 12 (“SF19”): Synthesis of 9-(2-tolylphenyl)-10-(naphth-2-yl)anthracene. Compound 12 was synthesized using the same procedure as Compound 11 described above, except that 2-tolylboronic acid (1.033 g, 7.60 mmol) was used as the boric acid, combined with 9-bromo-10-(naphth-2-yl)anthracene (1.457 g, 3.80 mmol), potassium carbonate (1.575 g, 11.4 mmol), and tetrakis(triphenylphosphine)-palladium (0.658 g, 15 mol%). 1 H NMR (CDCl3): 8.10 (dd, J=8.60, 2.36Hz, 1H), 8.03 (m, 2H), 7.94 (m, 1H), 7.76 (m, 2H), 7.63 (m, 5H), 7.47 (m, 3H), 7.33 (m, 5H). 13C NMR (CDCl3): 138.60, 138.09, 136.89, 136.77, 133.57, 132.90, 131.47, 130.46, 130.45, 130.28, 130.21, 129.80, 128.26, 128.24, 128.08, 128.05, 128.04, 127.30, 126.82, 126.57, 126.36, 126.05, 125.33, 125.29, 20.02. λAbs = 397 nm (DCM), λfluo = 415 nm (DCM). Yield (purified) = 75%, Yield (sublimated) = 73%. MS (m / z,%): 394.3 (M+, 100). GC retention time = 7.81 minutes.

[0416] Compound 13 (“SF20”): Synthesis of 9-(3-tolylphenyl)-10-(naphth-2-yl)anthracene. Compound 13 was synthesized using the same procedure as Compound 9 described above, except that 3-tolylboronic acid (0.668 g, 5.06 mmol) was used as the boric acid, combined with 9-bromo-10-(naphth-2-yl)anthracene (0.971 g, 2.53 mmol), potassium carbonate (1.05 g, 7.60 mmol), and tetrakis(triphenylphosphine)palladium (0.438 g, 15 mol). 1 H NMR (CDCl3): 8.09 (d, J=8.04Hz, 1H), 8.04 (m, 1H), 7.99 (s, 1H), 7.93 (m, 1H), 7.74 (m, 4H), 7.62 (m, 3H), 7.34 (m, 7H). 13 C NMR(CDCl3):139.13,138.13,137.66,138.87,133.58,132.88,132.13,130.38,130.20,130.06,129.75, 128.53,128.42,128.34,128.09,128.04,127.29,127.14,126.55,126.35,125.23,125.10,31.09,21.71. 19 FNMR (CDCl3): 113.22 (m). λAbs = 395 nm (DCM), λfluo = 420 nm (DCM). Yield (purified) = 69%, Yield (sublimated) = 81%. MS (m / z, %): 394.3 (M+, 100). GC retention time = 9.21 min.

[0417] Compound 14 (“SF21”): Synthesis of 9-(3,5-bis(trifluoromethyl)phenyl)-10-(naphth-2-yl)anthracene. Compound 14 was synthesized using the same procedure as Compound 9 described above, except that 3,5-bis(trifluoromethyl)phenylboronic acid (0.998 g, 3.87 mmol) was used as the boric acid, combined with 9-bromo-10-(naphth-2-yl)anthracene (0.744 g, 1.94 mmol), potassium carbonate (0.803 g, 5.81 mmol), and tetrakis(triphenylphosphine)palladium (0.335 g, 15 mol%). 1 H NMR(CDCl3): 8.02(m,7H),7.76(m,2H),7.61(m,3H),7.51(m,2H),7.38(m,4H). 13 C10 NMR (CDCl3): 207.07, 141.75, 138.81, 136.17, 133.57, 133.23, 133.03, 132.45, 132.04, 131.73, 130.28, 130.16, 129.89, 129.41, 128.27, 128.09, 127.62, 126.74, 126.57, 126.34, 125.83, 125.51, 31.07. 19F NMR (CDCl3): 62.59 (s). λAbs = 395 nm (DCM), λfluo = 425 nm (DCM). Yield (purified) = 58%, Yield (sublimated) = 85%. MS (m / z,%): 516.3 (M+, 100). GC retention time = 4.87 minutes.

[0418] Compound 15 (“SF1”): Synthesis of 9-(4-methylphenyl)-10-phenylanthracene. The following reagents were mixed in a reaction vessel: 9-bromo-10-phenylanthracene (1.45 g, 4.35 mmol); tetrakis(triphenylphosphine)palladium (Pd(PPh3)4, 0.75 g, 0.65 mmol); potassium carbonate (K2CO3, 1.80 g, 13.05 mmol); and 8.70 mmol boric acid. In this example, 4-methylphenylboronic acid (1.18 g) was used as the boric acid. The reaction vessel containing the mixture was placed on a heated plate and stirred using a magnetic stirrer. The reaction vessel was also connected to a water condenser. 333 ml solvent mixtures containing toluene, ethanol, and water in a volume ratio of 1:25:0.15 were prepared separately in round-bottom flasks and thoroughly stirred. The flask containing the solvent mixture was sealed and degassed with N2 for at least 30 minutes. The solvent mixture was then transferred from the round-bottom flask to the reaction vessel using a sleeve, without exposure to air. After all solvent mixture had been transferred, the reaction vessel was purged with nitrogen and heated to 65°C while stirring at approximately 1200 RPM, and reacted under nitrogen for at least 12 hours. Once the reaction was confirmed to be complete, the mixture was cooled to room temperature, and the solvent mixture was removed using a vacuum rotary evaporator. The contents of the flask were then redissolved in dichloromethane (DCM) and washed five times with NaOH solution, water, and brine. The organic phase was washed with magnesium sulfate and filtered. The resulting product was purified by passing it through a silica gel column under vacuum. The DCM solvent was removed to produce a powdered product. The powdered product was then further purified by gradient sublimation under reduced pressure of 20–50 mTorr using CO2 as the carrier gas. 1 H NMR(CDCl3):7.72(m,4H),7.58(m,3H),7.49(m,2H),7.41(m,4H),7.33(m,4H),2.55(s,3H). 13 C10 NMR (CDCl3): 139.28, 137.38, 137.21, 137.07, 136.10, 131.48, 131.34, 130.13, 130.03, 129.25, 128.53, 127.57, 127.20, 127.08, 125.10, 125.02, 21.55. λAbs = 393 nm (iPrOH), λfluo = 408.03 nm (iPrOH). Yield (purified) = 53%, Yield (sublimation) = 73%.

[0419] Compound 16 (“SF7”): Synthesis of 9-(4-trifluoromethylphenyl)-10-phenylanthracene. Compound 16 was synthesized using the same procedure as Compound 15 described above, except that 4-(trifluoromethyl)phenylboronic acid (1.43 g, 7.52 mmol) was used as the boric acid, combined with 9-bromo-10-phenylanthracene (1.25 g, 3.76 mmol), K2CO3 (1.60 g, 11.28 mmol) and Pd(PPh3)4 (0.65 g, 0.56 mmol). 1 H NMR(CDCl3):7.89(d,2H),7.73(m,2H),7.60(m,7H),7.49(m,2H),7.36(m,4H). 13 C NMR(CDCl3):143.31,138.95,135.32,131.92,131.37,129.99,129.86,1 28.60,127.74,127.30,126.48,125.87,125.60,125.58,125.27,123.16. 19 F NMR (CDCl3): -62.31 (s, 3F). λAbs = 392 nm (iPrOH), λfluo = 406.96 nm (iPrOH). Yield (purified) = 53%, Yield (sublimated) = 67%.

[0420] Compound 17 (“SF5”): Synthesis of 9-(4-tert-butylphenyl)-10-phenylanthracene. Compound 17 was synthesized using the same procedure as Compound 15 described above, except that 4-tert-butylphenylboronic acid (1.38 g, 7.76 mmol) was used as the boric acid, combined with 9-bromo-10-phenylanthracene (1.29 g, 3.88 mmol), K2CO3 (1.61 g, 11.64 mmol) and Pd(PPh3)4 (0.67 g, 0.58 mmol). 1 H NMR(CDCl3):7.72(m,4H),7.58(m,5H),7.50(m,2H),7.42(m,2H),7.33(m,4H),1.49(s,9H). 13 C NMR(CDCl3):150.41,139.32,137.50,137.02,135.99,131.49,131.08,130. 17,130.04,128.54,127.57,127.32,127.05,125.40,125.11,124.99,34.90. λAbs=393nm(iPrOH), λfluo=408.03nm(iPrOH).

[0421] Compound 18 (“SF24”): Synthesis of 9-(3-trifluoromethylphenyl)-10-phenylanthracene. Compound 18 was synthesized using the same procedure as Compound 15 described above, except for the volume of solvent (222 mL) and the use of 3-(trifluoromethyl)phenylboronic acid (0.95 g, 5.02 mmol) as boric acid, combined with 9-bromo-10-phenylanthracene (0.84 g, 2.51 mmol), K2CO3 (1.04 g, 7.53 mmol) and Pd(PPh3)4 (0.44 g, 0.38 mmol) at room temperature. 1 H NMR(CDCl3):7.84(m,1H),7.74(m,5H),7.60(m,5H),7.50(m,2H),7.37(m,4H). 13 C NMR(CDCl3):140.18,138.97,138.08,135.19,134.90,131.38,131.03,130.00,129.9 3,129.15,128.61,128.23,127.75,127.32,126.46,125.68,125.27,124.61,123.03. 19 F NMR(CDCl3):-62.38(s,3F). λAbs=392nm(iPrOH), λfluo=406.06nm(iPrOH).

[0422] Compound 19 (“SF8”): Synthesis of 9-(3-methylphenyl)-10-phenylanthracene. Compound 19 was synthesized using the same procedure as Compound 18 described above, except that 3-methylphenylboronic acid (0.79 g, 5.80 mmol) was used as the boric acid, combined with 9-bromo-10-phenylanthracene (0.97 g, 2.90 mmol), K2CO3 (1.20 g, 8.70 mmol) and Pd(PPh3)4 (0.51 g, 0.44 mmol). 1 H NMR(CDCl3):7.72(m,4H),7.56(m,6H),7.34(m,7H),2.49(m,3H). 13 C NMR(CDCl3):139.28,139.13,138.12,137.49,137.10,132.13,131.49,130.01,130. 01,128.54,128.52,128.40,128.31,127.59,127.22,127.08,125.11,125.05,21.69. λAbs=392nm(iPrOH), λfluo=406.06nm(iPrOH).

[0423] Synthesis of Compound 20 (“SF357”): 9-(4-trifluoromethoxyphenyl)-10-(naphth-1-yl)anthracene. Compound 20 was synthesized using the same procedure as Compound 1, except that 4-trifluoromethoxyphenylboronic acid (1.49 g, 7.82 mmol) was used as the boric acid. 1 H NMR (400MHz, CDCl3) δ8.06(d,J=8.2Hz,1H),8.01(d,J=8.3Hz,1H),7.86-7.67(m,5H),7.61(d,J=8.8Hz,2 H),7.55(d,J=6.3Hz,1H),7.52-7.41(m,3H),7.37-7.30(m,2H),7.27-7.18(m,3H),7.13(t,J=7.6Hz,1H). λAbs,max=376nm(DCM), λfluo,max=430nm(DCM).

[0424] Compound 21 (“SF170”): Synthesis of 9-(4-trifluorophenyl)-10-(phenanthrene-1-yl)anthracene. The following reagents were mixed in a 500 mL reaction vessel: 9-bromo-10-(phenanthrene-10-yl)anthracene (1.500 g, 3.91 mmol); tetrakis(triphenylphosphine)palladium(O) (Pd(PPh3)4, 0.678 g, 0.587 mmol); potassium carbonate (K2CO3, 1.623 g, 11.7 mmol); and 7.82 mmol boric acid. In this example, 4-trifluoromethylphenylboronic acid (1.49 g) was used as the boric acid. The reaction vessel containing the mixture was placed on a heated plate and stirred using a magnetic stirrer. The reaction vessel was also connected to a water condenser. 300 mL solvent mixtures containing N,N-dimethylformamide (DMF) and water in a 25:3 volume ratio were prepared separately in round-bottom flasks with thorough stirring. The flask containing the solvent mixture was sealed and degassed with N2 for at least 30 minutes. The solvent mixture was then transferred from the round-bottom flask to the reaction vessel using a sleeve, without exposure to air. After all solvent mixture had been transferred, the reaction vessel was purged with nitrogen and heated to 65°C while stirring at approximately 1200 RPM, reacting under nitrogen for at least 12 hours. Once the reaction was confirmed to be complete, the mixture was cooled to room temperature and then transferred to a 2 L beaker. 1500 mL of water was slowly added to the beaker while the mixture was slowly stirred to induce separation into two phases. The precipitate was filtered off and dried to produce a powdered product. The powdered product was then further purified by gradient sublimation under reduced pressure of 20–50 mTorr using CO2 as the carrier gas. The observed yield after synthesis was 139.2 mol% (2.40 g), and the total molar yield after gradient sublimation was 63.2 mol%. The GC / MS elution time was 12.136 min, and the abundance was 6.5 × 10⁻⁶. 6 .1 H NMR (400MHz, CDCl3) δ8.87 (dd, J=8.4, 3.6Hz, 2H), 7.90 (t, J=7.1Hz, 3H), 7.85 (s, 1H), 7.81-7.74 (m, 1H), 7. 74-7.69(m,1H),7.65(dd,J=13.9,7.8Hz,5H),7.58(d,J=8.8Hz,2H),7.37-7.29(m,3H),7.24-7.18(m,3H). λAbs, max=377nm (DCM), λfluo, max=432nm (DCM).

[0425] Synthesis of Compound 22 (“SF173”): 9-(4-tert-butylphenyl)-10-(phenanthrene-1-yl)anthracene. Compound 22 was synthesized using the same procedure as Compound 21 described above, except that 4-tert-butylphenylboronic acid (1.39 g, 7.82 mmol) was used as the boric acid. The observed yield after synthesis was 100.3 mol% (1.69 g), and the total molar yield after gradient sublimation was 67.1 mol%. GC / MS elution time was 22.185 min, and abundance was 1.1 × 10⁻⁶. 6 . 1 H NMR (400MHz, CDCl3) δ8.06 (d, J = 8.3 Hz, 2H), 8.01 (d, J = 8.2 Hz, 2H), 7.73-7.61 (m, 6H), 7.56-7.32 (m, 10H), 7.27-7.06 (m, 10H). λAbs,max=378nm(DCM), λfluo,max=436nm(DCM).

[0426] In addition to the above, the following compounds 23-36 were synthesized: 9-(3-(naphthyl-1-yl)phenyl)-10-(naphthyl-1-yl)anthracene (compound 23 (“SF168”)); 9-(3-(naphthyl-1-yl)phenyl)-10-(phenanthrene-9-yl)anthracene (compound 24 (“SF169”)); 2,6-bis(4-fluorophenyl)-9,10-bis(naphthyl-2-yl)anthracene (compound 25 (“SF3”)); 2,6-bis(4-tert-butyl)phenyl)-9,10-bis(naphthyl-2-yl)anthracene (compound 26 (“SF2”)); 9,10-bis(naphthyl-2-yl)-2-(4-(trifluoromethyl)phenyl)anthracene (compound 27 (“SF168”)); SF169 (“SF169 ... 157”); 9-(4-trifluoromethoxyphenyl)-10-(naphth-2-yl)anthracene (compound 28 (“SF315”)); 9,10-diphenylanthracene (compound 29); 9-(4-methoxyphenyl)-10-phenylanthracene (compound 30); 9-(4-fluorophenyl)-10-phenylanthracene (compound 31); 9-phenyl-10-(3,4,5-trifluorophenyl)anthracene (compound 32); 9-(2-methylphenyl)-10-phenylanthracene (compound 33); 9-phenyl-10-(phenanthrene-9-yl)anthracene (compound 34); 9-(3-chloro-4-fluorophenyl)-10-phenylanthracene (compound 35 (“SF0”)); and 9-(3,4,5-trifluorophenyl)-10-(phenanthrene-9-yl)anthracene (compound 36 (“SF171”)).

[0427]

[0428] Example 1: Low-rate evaluation of compounds 1-5. To characterize the effect of forming nucleation-inhibiting coatings using various materials, a series of samples were prepared using each of compounds 1 to 5 to form nucleation-inhibiting coatings.

[0429] As used in the examples herein, the layer thickness of the material refers to the amount of material deposited on the target surface (or, in the case of selective deposition, on a target area of ​​the surface), which corresponds to the amount of material covering the target surface with a uniformly thick layer of material having the mentioned layer thickness. For example, depositing a layer thickness of 10 nm means that the amount of material deposited on the surface corresponds to the amount of material forming a uniformly thick layer of material of 10 nm thickness. It should be understood that, for example, the actual thickness of the deposited material may be non-uniform due to possible stacking or aggregation of molecules or atoms. For example, depositing a layer thickness of 10 nm can result in some portions of deposited material with an actual thickness greater than 10 nm, or other portions of deposited material with an actual thickness less than 10 nm. A certain layer thickness of material deposited on a surface may correspond to the average thickness of the deposited material across the entire surface.

[0430] A series of samples were fabricated by depositing an approximately 20 nm thick organic layer of 2-(4-(9,10-bis(naphthyl-2-yl)anthracene-2-yl)phenyl)-1-phenyl-1H-benzo-[D]imidazolium (LG201) on a glass substrate, followed by a approximately 30 nm thick nucleation inhibition coating on the LG201 organic layer. Magnesium was then deposited on the surface of the nucleation inhibition coating using an open-mask method. Each sample was subjected to an average evaporation rate of approximately [missing value]. Magnesium vapor flux. During the deposition of the magnesium coating, a deposition time of approximately 2000 seconds was used to obtain a reference magnesium layer thickness of approximately 500 nm.

[0431] Once the samples are prepared, optical transmittance measurements are performed to determine the relative amount of magnesium deposited on the surface of the nucleation inhibition coating. It should be understood that relatively thin magnesium coatings, having a thickness of, for example, less than a few nanometers, are substantially transparent. However, transmittance decreases as the thickness of the magnesium coating increases. Therefore, the relative properties of various nucleation inhibition coating materials can be evaluated by measuring the transmittance through the sample, which is directly related to the amount or thickness of the magnesium coating deposited on it during the magnesium deposition process. Table 3 below summarizes the materials used to form the nucleation inhibition coating in each sample and the optical transmittance measurements for each sample. When calculating the optical transmittance measurements, any loss or absorption of light due to the presence of the glass substrate, the LG201 organic layer, and the nucleation inhibition coating is subtracted from the measured transmittance. Therefore, the optical transmittance values ​​provided in Table 3 only reflect the transmittance of light through any magnesium coating that may be present on the surface of the nucleation inhibition coating (values ​​taken at a wavelength of approximately 550 nm).

[0432] Table 3 - Optical Transmittance Measurement Data

[0433] Nucleation inhibition coating materials Optical transmittance (%) Compound 1 100 Compound 2 97 Compound 3 96 Compound 4 99 Compound 5 100

[0434] Example 2: Low-rate evaluation of compounds 6-22. To characterize the effectiveness of forming nucleation-inhibiting coatings using various materials, a series of samples were prepared using each of compounds 6, 7, and 9 through 22 to form nucleation-inhibiting coatings.

[0435] The series of samples was fabricated by depositing a nucleation inhibition coating on a glass substrate. Magnesium was then deposited on the surface of the nucleation inhibition coating using an open-mask method. Each sample was subjected to an average evaporation rate of approximately [missing information]. Magnesium vapor flux. During the deposition of the magnesium coating, a deposition time of approximately 1000 seconds was used to obtain a reference magnesium layer thickness of approximately 200 nm.

[0436] Table 4 below summarizes the materials used to form the nucleation inhibition coating in each sample and the optical transmittance measurements for each sample.

[0437] Table 4 - Optical Transmittance Measurement Data

[0438]

[0439]

[0440] Based on the above, it can be seen that the samples fabricated using compounds 1 to 7 and 9 to 22 as nucleation inhibition coating materials exhibited relatively high optical transmittance exceeding 90%. As mentioned above, the high optical transmittance can be directly attributed to the presence of a relatively small amount of magnesium coating (if present) on the surface of the nucleation inhibition coating, which absorbs light transmitted through the sample. Therefore, these nucleation inhibition coating materials typically exhibit a relatively low affinity or initial adhesion probability to magnesium, and thus may be particularly useful for achieving selective deposition and patterning of magnesium coatings in certain applications. Conversely, samples fabricated using compounds 29 to 34 as nucleation inhibition coating materials exhibited relatively low or no optical transmittance, indicating the deposition of a considerably thick magnesium coating. Therefore, compounds 29-34 have generally been found to perform poorly as nucleation inhibition coating materials.

[0441] As used in this and other examples described herein, reference layer thickness refers to the thickness of the magnesium layer deposited on a reference surface exhibiting a high initial adhesion coefficient (e.g., a surface with an initial adhesion coefficient of approximately or close to 1.0). Specifically, for these examples, the reference surface is the surface of a quartz crystal located within the deposition chamber, used to monitor the deposition rate and reference layer thickness. In other words, reference layer thickness does not represent the actual thickness of magnesium deposited on the target surface (i.e., the surface of the nucleation inhibition coating). Rather, reference layer thickness refers to the thickness of the magnesium layer deposited on the reference surface when both the target surface and the reference surface (i.e., the surface of the quartz crystal) are subjected to the same magnesium vapor flux during the same deposition period. As will be understood, when the target surface and the reference surface are not simultaneously subjected to the same vapor flux during deposition, appropriate tool factors can be used to determine and monitor the reference thickness.

[0442] Example 3: High-rate evaluation of compounds 1-5. To determine the potential impact of magnesium evaporation rate on the nucleation inhibition properties of various materials, a series of samples were prepared using each of compounds 1-5 to form nucleation inhibition coatings, which were then exposed to relatively high magnesium vapor fluxes. A series of samples were fabricated by depositing an approximately 20 nm thick organic layer of LG201 on a glass substrate, followed by a nucleation inhibition coating of approximately 30 nm thick on the LG201 organic layer. The samples were subjected to an average deposition rate of approximately The magnesium flux, as measured using a reference surface. During the deposition of the magnesium coating, a deposition time of approximately 500 seconds was used to obtain a reference magnesium layer thickness of approximately 500 nm.

[0443] Once the samples were prepared, optical transmittance measurements were performed to determine the relative amount of magnesium deposited on the surface of the nucleation inhibition coating. Table 4 below summarizes the thickness of the nucleation inhibition coating and the optical transmittance measurements for each sample. When calculating the optical transmittance measurements, any loss or absorption of light due to the presence of the glass substrate and the nucleation inhibition coating was subtracted from the measured transmittance. Therefore, the optical transmittance values ​​provided in Table 4 only reflect the transmittance of light through any magnesium coating that may be present on the surface of the nucleation inhibition coating (values ​​taken at a wavelength of approximately 550 nm).

[0444] Table 5 - Optical Transmittance Measurement Data

[0445] Nucleation inhibition coating materials Optical transmittance (%) Compound 1 1 Compound 2 6 Compound 3 26 Compound 4 100 Compound 5 66

[0446] Example 4: High-rate evaluation of compound 6-22. To determine the potential effect of magnesium evaporation rate on the nucleation inhibition properties of various materials, a series of samples were prepared using each of compounds 6-22 to form nucleation inhibition coatings, which were then exposed to relatively high magnesium vapor fluxes. A series of samples were fabricated by depositing nucleation inhibition coatings on glass substrates. The samples were subjected to an average deposition rate of approximately The magnesium flux, as measured using a reference surface. During the deposition of the magnesium coating, a deposition time of approximately 200 seconds was used to obtain a reference magnesium layer thickness of approximately 200 nm.

[0447] Once the samples were prepared, optical transmittance measurements were performed to determine the relative amount of magnesium deposited on the surface of the nucleation inhibition coating. Table 6 below summarizes the thickness of the nucleation inhibition coating and the optical transmittance measurements for each sample. When calculating the optical transmittance measurements, any loss or absorption of light due to the presence of the glass substrate and the nucleation inhibition coating was subtracted from the measured transmittance. Therefore, the optical transmittance values ​​provided in Table 6 only reflect the transmittance of light through any magnesium coating that may be present on the surface of the nucleation inhibition coating (values ​​taken at a wavelength of approximately 550 nm).

[0448] Table 6 - Optical Transmittance Measurement Data

[0449]

[0450]

[0451] Based on the above, it can be seen that only samples manufactured using compounds 4, 6, 7, 8, 9, 10, 11, 16, 17, 21, and 22 as nucleation inhibition coating materials exhibited relatively high optical transmittance exceeding 90%. As mentioned above, the high optical transmittance can be directly attributed to the presence of a relatively small amount of magnesium coating (if any) on the surface of the nucleation inhibition coating. Therefore, such nucleation inhibition coating materials may be particularly useful for achieving selective deposition and patterning of magnesium coatings in certain applications. For example, this material may be particularly suitable for magnesium coatings with deposition rates significantly higher than approximately [missing information - likely related to specific applications]. Applications of this material are limited. Furthermore, samples prepared using compounds 29 to 34 as nucleation inhibition coating materials did not exhibit optical transmittance, indicating the deposition of a considerably thick magnesium coating. Therefore, compounds 29-34 have generally been found to perform poorly as nucleation inhibition coating materials.

[0452] Samples prepared using compounds 5, 12, 13, 14, 19, and 20 as nucleation inhibition coating materials exhibited optical transmittances of approximately 66%, 33%, 35%, 49%, 46%, and 36%, respectively. While materials exhibiting higher optical transmittance and thus superior nucleation inhibition properties (i.e., low initial adhesion probability) are generally more advantageous for applications requiring highly selective deposition of magnesium coatings, materials such as compounds 5, 12, 13, 14, 19, and 20 may still be useful in forming nucleation inhibition coatings for certain applications.

[0453] Samples prepared using compounds 1, 2, 15, and 18 all exhibited relatively low optical transmittance. In particular, samples prepared using compounds 15 and 18 showed no transmittance. This indicates the deposition of a relatively large or thick magnesium coating on the surface of the nucleation-inhibiting coating, resulting in significant light absorption. Therefore, these materials may not be suitable for achieving selective deposition of magnesium coatings, especially where a transmittance greater than approximately [missing information] is required. High deposition rate (e.g., approximately) In applications where the deposition rate is high, relatively thick magnesium coatings can be selectively deposited.

[0454] By comparing the results of Examples 3 and 4 with those of Examples 1 and 2, it has been determined, somewhat unexpectedly, that some materials substantially inhibit magnesium deposition when subjected to magnesium vapor flux at relatively low deposition or evaporation rates, but the degree of inhibition is significantly reduced when relatively high magnesium deposition or evaporation rates are used. In other words, it has been observed that at approximately At relatively low magnesium deposition rates, selective deposition of magnesium coatings can be successfully achieved using certain nucleation-inhibiting coating materials (e.g., compounds 1, 2, 15, and 18). However, at approximately... At relatively high deposition rates, the same nucleation inhibition coating material cannot successfully achieve highly selective deposition of magnesium coatings.

[0455] It was also observed that certain nucleation inhibition coating materials appeared to effectively inhibit magnesium deposition on them, regardless of the deposition rate of magnesium used in these examples. Based on the experimental results, compounds 4, 6, 7, 8, 9, 10, 11, 16, 17, 21, and 22 can be used to form effective nucleation inhibition coatings, so as to achieve at least approximately Highly selective deposition of magnesium coatings is achieved at magnesium deposition rates.

[0456] Furthermore, it was found that, in addition to using compounds 23-28, 35 and 36 as nucleation inhibition coatings, samples similar to those in Example 4 also exhibited relatively high light transmittance, suggesting that this material may also be suitable for forming nucleation inhibition coatings in at least some applications.

[0457] Without being bound by a specific theory, based on the nucleation and growth theories discussed above, it is assumed that the surface formed by the deposition of materials (e.g., compound 1) generally exhibits a desorption energy (E) for adsorbed magnesium atoms. des The activation energy (E) for the diffusion of magnesium adsorbed atoms is relatively low. S High, or both. Thus, even increasing the vapor impact rate of magnesium... The critical nucleation rate is determined by the following equation. The levels remain relatively low, thus essentially suppressing magnesium deposition.

[0458]

[0459] It is assumed that the substrate temperature can rise as the vapor impact rate (i.e., evaporation rate) increases. For example, when the evaporation rate increases, the evaporation source typically operates at a higher temperature. Therefore, at higher evaporation rates, the substrate can be subjected to higher levels of thermal radiation, which can heat the substrate. Other factors that may lead to an increase in substrate temperature include: substrate heating caused by energy transfer from more evaporating molecules incident on the substrate surface, and an increased rate of condensation or desublimation of molecules on the substrate surface, in which energy is released and heating is caused.

[0460] To further clarify, the term "selectivity," when used in the context of nucleation inhibition coatings, is generally understood to refer to the degree to which a nucleation inhibition coating inhibits or prevents the deposition of a conductive coating on it when subjected to a vapor flux of the material used to form the conductive coating. For example, a nucleation inhibition coating exhibiting relatively high selectivity for magnesium will generally inhibit or prevent the deposition of a magnesium coating on it better than a nucleation inhibition coating with relatively low selectivity. Generally, it has been observed that nucleation inhibition coatings exhibiting relatively high selectivity also exhibit a relatively low initial adhesion probability, while nucleation inhibition coatings exhibiting relatively low selectivity exhibit a relatively high initial adhesion probability.

[0461] Example 4. A series of kinetic Monte Carlo (KMC) calculations were performed to simulate the deposition of metal-adsorbed atoms on surfaces exhibiting various activation energies. Specifically, by making the atoms with activation energies similar to those of desorption (E0...) des ), diffusion (E s ), dissociation (E) i ) and surface reaction (E b The deposition of metal adsorbed atoms (e.g., magnesium adsorbed atoms) on such surfaces was simulated by calculating the vapor flux of evaporation at constant monomer flux rates on surfaces with different activation energy levels. Figure 39 This is a diagram illustrating the various "events" considered in the current instance. Figure 39 The diagram illustrates the incident of atom 5301 from the gas phase onto surface 5300. Once atom 5301 is adsorbed onto surface 5300, it becomes adsorbed atom 5303. Adsorbed atom 5303 can undergo various events, including: (i) desorption, which produces desorbed atom 5311; (ii) diffusion, which produces adsorbed atom 5313 diffused onto surface 5300; (iii) nucleation, in which a critical number of adsorbed atoms 5315 aggregate to form nuclei; and (iv) reaction with the surface, in which adsorbed atom 5317 reacts and binds to surface 5300.

[0462] From the frequency of attempts (ω), the activation energy (E) of each event, and the Boltzmann constant (kΩ) B Given the system temperature (T), calculate the rate (R) of desorption, diffusion, or dissociation using the equation provided below.

[0463]

[0464] For the purposes of the above calculations, the critical cluster size (i.e., the critical number of adsorbed atoms required to form a stable nucleus) was chosen to be 2. The diffusion activation energy of the adsorbed atom-adsorbed atom interaction was chosen to be greater than about 0.6 eV, the desorption activation energy of the adsorbed atom-adsorbed atom interaction was chosen to be greater than about 1.5 eV, and the desorption activation energy of the adsorbed atom-adsorbed atom interaction was chosen to be about 1.25 times greater than the desorption activation energy of the surface-adsorbed atom interaction. The above values ​​and conditions were chosen based on reported values ​​for magnesium-magnesium interactions. For simulation purposes, a temperature of 300 K (T) was used. The calculations were repeated using reported values ​​for other metal adsorbed atom-metal adsorbed atom activation interactions (e.g., tungsten-tungsten). The above reference values ​​have been reported, for example, in Neugbauer, CA, 1964, Physics of Thin Films, 2, 1, "Structural Disorder Phenomena in Thin Metal Films".

[0465] Based on the simulation results, the number of adsorbed monomers (N) retained on the surface during the simulation can be calculated using the equation provided below. ads ) as a percentage of the total number of monomers on the impact surface (N) total The cumulative adhesion probability is determined by the score of the fraction.

[0466]

[0467] During a deposition period longer than approximately 8 minutes, use the method corresponding to approximately The steam flux rate was simulated to simulate deposition, and the time period corresponds to the time period during which a film with a reference thickness greater than about 96 nm was deposited.

[0468] For a typical surface, the desorption activation energy (E) des It is usually greater than or equal to the diffusion activation energy (E). s Based on simulations, it has now been found that, at least in some cases, the desorption activation energy (E) is... des ) and diffusion activation energy (E sSurfaces exhibiting relatively small differences between the surface activation energy and the diffusion activation energy may be particularly useful as surfaces acting as nucleation inhibition coatings. In some embodiments, the desorption activation energy is greater than or equal to the diffusion activation energy of the surface, and less than or equal to about 1.1 times, less than or equal to about 1.3 times, less than or equal to about 1.5 times, less than or equal to about 1.6 times, less than or equal to about 1.75 times, less than or equal to about 1.8 times, less than or equal to about 1.9 times, less than or equal to about 2 times, or less than or equal to about 2.5 times the diffusion activation energy of the surface. In some embodiments, the difference between the desorption activation energy and the diffusion activation energy (e.g., in absolute value) is less than or equal to about 0.5 eV, less than or equal to about 0.4 eV, less than or equal to about 0.35 eV, more preferably less than or equal to about 0.3 eV, or less than or equal to about 0.2 eV. In some embodiments, the difference between the desorption activation energy and the diffusion activation energy is between about 0.05 eV and about 0.4 eV, between about 0.1 eV and about 0.3 eV, or between about 0.1 eV and about 0.2 eV.

[0469] It has now been found that, at least in some cases, the desorption activation energy (E) des ) and dissociation activation energy (E i Surfaces exhibiting relatively small differences between nucleation inhibition coatings may be particularly useful as surfaces for application. In some embodiments, the desorption activation energy (E) des ) less than or equal to the dissociation activation energy (E) i The desorption activation energy is a multiple of about 1.5 times, about 2 times, about 2.5 times, about 2.8 times, about 3 times, about 3.2 times, about 3.5 times, about 4 times, or about 5 times the surface dissociation activation energy in some embodiments.

[0470] It has now been found that, at least in some cases, at the diffusion activation energy (E... s ) and dissociation activation energy (E i Surfaces exhibiting relatively small differences between diffusion activation energy (E) may be particularly useful as surfaces acting as nucleation inhibition coatings. In some embodiments, the diffusion activation energy (E) s ) less than or equal to the dissociation activation energy (E) i The diffusion activation energy is a multiple of about 2 times, about 2.5 times, about 2.8 times, about 3 times, about 3.2 times, about 3.5 times, about 4 times, or about 5 times the surface dissociation activation energy in some embodiments.

[0471] In some embodiments, the desorption activation energy (E) of the surface of the nucleation inhibition coating is... des ), diffusion activation energy (E)s ) and dissociation activation energy (E i The relationship between them can be represented as follows:

[0472] E des ≤α*E s ≤β*E i

[0473] Where α can be any number selected from the range of about 1.1 and about 2.5, and β can be any number selected from the range of about 2 and about 5. In some other embodiments, α can be any number selected from the range of about 1.5 and about 2, and β can be any number selected from the range of about 2.5 and about 3.5. In yet another further embodiment, α is chosen to be about 1.75, and β is chosen to be about 3.

[0474] It has now been found that, at least in certain cases, surfaces with the following relationship can exhibit a cumulative adhesion probability of less than about 0.1 for magnesium vapor:

[0475] E des ≤1.75*E s ≤3*E i

[0476] Therefore, in some embodiments, surfaces having the above-described activation energy relationship may be particularly advantageous as surfaces for nucleation inhibition coatings.

[0477] It has now been found that, in addition to the activation energy relationships described above, surfaces exhibiting a relatively small difference of less than or equal to about 0.3 eV between the diffusion activation energy and the dissociation activation energy may be particularly useful in certain applications where a cumulative adhesion probability of less than about 0.1 is desired. Diffusion activation energy (E... s ) and dissociation activation energy (E i The energy difference (ΔE) between them s-i It can be calculated according to the following equation:

[0478] ΔE s-i =E s -E i

[0479] For example, it has now been found that, at least in some cases, surfaces with an energy difference between the diffusion activation energy and the dissociation activation energy less than or equal to about 0.25 eV exhibit a cumulative adhesion probability of less than or equal to about 0.07 for magnesium vapor. In other instances, ΔE s-i A voltage of approximately 0.2 eV results in a cumulative adhesion probability of approximately 0.05, ΔE. s-i A voltage less than or equal to approximately 0.1 eV results in a cumulative adhesion probability less than or equal to approximately 0.04, ΔE. s-iA concentration of less than or equal to approximately 0.05 eV results in a cumulative adhesion probability of less than or equal to approximately 0.025.

[0480] Therefore, in some embodiments, the surface is characterized in that: α is any number selected from the range between about 1.1 and about 2.5, or more preferably the range between about 1.5 and about 2, for example, about 1.75, and β is any number selected from the range between about 2 and about 5, or more preferably the range between about 2.5 and about 3.5, for example, about 3, with the following inequality relationship:

[0481] E des ≤α*E s ≤β*E i

[0482] And ΔE is calculated according to the following equation. s-i Less than or equal to about 0.3 eV, less than or equal to about 0.25 eV, less than or equal to about 0.2 eV, less than or equal to about 0.15 eV, less than or equal to about 0.1 eV, or less than or equal to about 0.05 eV, the equation is as follows:

[0483] ΔE s-i =E s -E i

[0484] The calculation results were also analyzed to determine the simulated initial adhesion probability, which in this example was specified as the adhesion probability of magnesium to the surface when a magnesium coating with an average thickness of approximately 1 nm is deposited onto the surface. Based on the analysis of the results, it has now been found that, at least in some cases, the desorption activation energy (E... des The energy is less than the diffusion activation energy (E). s It is about twice that of the diffusion activation energy (E). s The energy is less than the dissociation activation energy (E). i A surface that is approximately 3 times larger than the surface of a typical surface exhibits a relatively low initial adhesion probability of less than approximately 0.1.

[0485] Without wishing to be bound by any particular theory, it is assumed that the activation energies of various events and the respective relationships between these energies as described above will generally apply to the activation energy (E) of the adsorption atom-surface reaction. b ) greater than the desorption activation energy (E) des The surface of the adsorbed atoms. The activation energy (E) for the reaction between adsorbed atoms and the surface. b The energy is less than the desorption activation energy (E). des The surface of a given surface is assumed to have an initial adhesion probability of adsorbed atoms that is typically greater than about 0.1.

[0486] It should be understood that the various activation energies described above are considered non-negative values ​​measured in any energy unit, such as electron volts (eV). In this case, the various inequalities and equations relating to the activation energies discussed above generally apply.

[0487] Although simulated values ​​of various activation energies have been discussed above, it should be understood that these activation energies can also be experimentally measured and / or derived using various techniques. Examples of techniques and instruments that can be used for this purpose include, but are not limited to, thermal desorption spectroscopy, field ion microscopy (FIM), scanning tunneling microscopy (STM), transmission electron microscopy (TEM), and neutron activation tracer scanning (NATS).

[0488] Typically, given a general composition and structure of the surface and adsorbed atoms (e.g., through experimental measurements and analysis), the various activation energies described herein can be derived through quantum chemical simulations. For simulations, quantum chemical simulations can be used, employing methods such as singlet point, transition state, energy surface scan, and local / global energy minima. Various theories, such as density functional theory (DFT), Hartree-Fock (HF), self-consistent field (SCF), and fully configured interaction (FCI), can be used in conjunction with these simulation methods. As will be understood, various events, such as diffusion, desorption, and nucleation, can be simulated by examining the relative energies of the initial, transition, and final states. For example, the relative energy difference between the transition and initial states can often provide a relatively accurate estimate of the activation energies associated with various events.

[0489] As used herein, the terms “substantially,” “quite,” “roughly,” and “about” are used to indicate and describe small variations. When used in conjunction with an event or situation, these terms can refer to a situation where the event or situation occurred precisely, or very close to occurring. For example, when used in conjunction with a numerical value, these terms can refer to a range of variation less than or equal to ±10% of that value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%.

[0490] In the description of some embodiments, a component that is provided "on / over" or "covering / covers" another component can cover situations where the preceding component is directly on the following component (e.g., in physical contact with the following component), and situations where one or more intermediate components are located between the preceding and following components.

[0491] The embodiments exemplarily described herein may be suitably practiced without the presence of any one or more elements or limitations not specifically disclosed herein. Therefore, terms such as “comprising,” “including,” and “containing” should be interpreted broadly and without limitation. Furthermore, the terminology and expressions used herein have been used as descriptive terms rather than limiting terms, and are not intended to exclude any equivalents of the features shown and described or portions thereof; however, it should be recognized that various modifications may be made within the scope of the claimed technology. Additionally, the phrase “consistently composed of” will be understood to include those specifically described elements and those additional elements that do not materially affect the essential and novel features of the claimed technology. The phrase “consisting of” does not include any unspecified elements.

[0492] Furthermore, when features or aspects of this disclosure are described in accordance with the Markush Group, those skilled in the art will recognize that this disclosure is also described in accordance with any individual member or subgroup of the Markush Group.

[0493] As those skilled in the art will understand, for any and all purposes, particularly in providing written description, all scopes disclosed herein also encompass any and all possible subscopes and combinations thereof. Any listed scope can be readily considered adequately descriptive and capable of being decomposed into at least equal halves, thirds, quarters, fifths, tenths, etc. As a non-limiting example, each scope discussed herein can be readily decomposed into a lower third, middle third, and upper third, etc. Those skilled in the art will also understand that all language such as “at most,” “at least,” “greater than,” “less than,” etc., includes the listed numbers and refers to a scope that can subsequently be subdivided into subscopes as discussed above. Finally, as those skilled in the art will understand, a scope includes each individual member.

[0494] Although this disclosure has been described with reference to certain specific embodiments, various modifications thereto will be apparent to those skilled in the art. Any examples provided herein are included for illustrative purposes only and are not intended to limit the disclosure in any way. Any accompanying drawings provided herein are for illustrative purposes only and are not drawn to scale and do not limit the disclosure in any way. The scope of the appended claims should not be limited to the specific embodiments set forth in the foregoing description, but should be given its full scope consistent with the disclosure as a whole. The disclosures of all documents cited herein are incorporated herein by reference in their entirety.

[0495] Other embodiments are described in the appended claims.

Claims

1. A photoelectric device comprising: Nucleation inhibition coating (NIC) disposed on the first surface of the first layer in the first portion of the device in the lateral aspect; and A conductive coating is disposed on the second surface of the second portion in the lateral aspect of the device. The NIC includes compound (I) Formula (I) Where X1 to X 10 At least two of them are independently selected from the following groups: (IA), (IB), (IC), (ID), (IE), (IF), and (IG), and the remaining X1 to X... 10 Each is independently selected from the following groups: H, D (deuterium), F, Cl, alkyl, cycloalkyl, silalkyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy; (IA) In (IA), A1, A2, A3, A4 and A5 are each independently selected from the group consisting of: H, D (deuterium), F, Cl, alkyl, cycloalkyl, silalkyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy and fluoroalkoxy; (IB) In (IB), at least one of B1, B2, B3, B4, B5, B6, B7 and B8 represents a connection with formula (I), and the remaining B1, B2, B3, B4, B5, B6, B7 and B8 are each independently selected from the group consisting of: H, D (deuterium), F, Cl, alkyl, cycloalkyl, silalkyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy and fluoroalkoxy; (IC) In (IC), C1, C2, C3, C4, C5, C6, C7, C8, C9 and C 10 At least one of them represents a connection with equation (I); and the remaining C1, C2, C3, C4, C5, C6, C7, C8, C9 and C 10 Each is independently selected from the following groups: H, D (deuterium), F, Cl, alkyl, cycloalkyl, silalkyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy; (ID) Among them, in (ID), D1, D2, D3, D4, D5, D6, D7, D8, D9 and D 10 At least one of them represents a connection with equation (I), and the remaining D1, D2, D3, D4, D5, D6, D7, D8, D9 and D 10 Each is independently selected from the following groups: H, D (deuterium), F, Cl, alkyl, cycloalkyl, silalkyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy; (IE) In (IE), E1, E2, E3, E4, E5, E6, E7, E8, E9, E 10 E 11 and E 12 At least one of them represents a connection with equation (I), and the remaining E1, E2, E3, E4, E5, E6, E7, E8, E9, E 10 E 11 and E 12 Each is independently selected from the following groups: H, D (deuterium), F, Cl, alkyl, cycloalkyl, silalkyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy; (IF) In (IF), F1, F2, F3, F4, F5, F6, F7, F8, F9 and F 10 At least one of them represents a connection with equation (I), and the remaining F1, F2, F3, F4, F5, F6, F7, F8, F9 and F 10 Each is independently selected from the group consisting of: H, D (deuterium), F, Cl, alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy; and (IG) In (IG), G1, G2, G3, G4, G5, G6, G7, G8, G9, G 10 G 11 and G 12 At least one of them represents a connection with equation (I), and the remaining G1, G2, G3, G4, G5, G6, G7, G8, G9, G 10 G 11 and G 12 Each of the following groups is independently selected: H, D (deuterium), F, Cl, alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy.

2. The optoelectronic device according to claim 1, wherein at least one of X1, X8, and X9 is selected from the group consisting of (IA), (IB), (IC), (ID), (IE), (IF), and (IG), and X4, X5, and X 10 At least one of them is selected from the following groups: (IA), (IB), (IC), (ID), (IE), (IF), and (IG).

3. The optoelectronic device according to claim 2, wherein X2, X3, X6 and X7 are each independently selected from the group consisting of: H, D (deuterium), F, Cl, C1-C6 alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy and fluoroalkoxy.

4. The optoelectronic device according to claim 1, wherein at least one of X1, X8, and X9 is selected from the group consisting of (IA), (IB), and (IC), and X4, X5, and X... 10 At least one of them is selected from the following groups: (IA), (IB) and (IC).

5. The optoelectronic device according to claim 4, wherein X2, X3, X6 and X7 are each independently selected from the group consisting of: H, D (deuterium), F, Cl, C1-C6 alkyl, cycloalkyl, silyl, fluoroalkyl, aralkyl, aryl, heteroaryl, alkoxy and fluoroalkoxy.

6. The photoelectric device according to claim 1, wherein at least one of X1, X8, and X9 is (IA), and X4, X5, and X... 10 At least one of them is selected from the following groups: (IB) and (IC).

7. The optoelectronic device according to claim 1, wherein at least one of X1, X8, and X9 is (IA), and X4, X5, and X... 10 At least one of them is (IB).

8. The photoelectric device according to claim 1, wherein at least one of X1, X8, and X9 is (IA), and X4, X5, and X... 10 At least one of them is (IC).

9. The optoelectronic device according to claim 6, wherein at least one of A1, A2, A3, A4 and A5 is selected from the group consisting of: tert-butyl, methoxy, trifluoromethoxy, methyl, trifluoromethyl and F.

10. The optoelectronic device according to claim 6, wherein at most three of A1, A2, A3, A4 and A5 are F.

11. The optoelectronic device according to claim 9, wherein B1, B2, B3, B4, B5, B6, B7, C1, C2, C3, C4, C5, C6 and C7 are H.

12. The photoelectric device according to claim 1, wherein X9 is (IA), and X 10 Choose from the following groups: (ID), (IE), (IF), and (IG).

13. The optoelectronic device according to claim 1, wherein the thickness of the NIC is from 5 nm to 100 nm.

14. The optoelectronic device of claim 1, wherein the NIC comprises a compound selected from the group consisting of:

15. The optoelectronic device of claim 1, wherein the first portion comprises at least one emission region.

16. The optoelectronic device of claim 1, wherein the second portion comprises at least a portion of the non-emitting region.

17. The optoelectronic device of claim 1, further comprising a first electrode, a second electrode, and a semiconductor layer between the first electrode and the second electrode, wherein the second electrode extends in the first portion between the NIC and the semiconductor layer.

18. The optoelectronic device of claim 17, wherein the conductive coating is electrically coupled to the second electrode.

19. The optoelectronic device of claim 15, wherein at least a first portion of the first portion overlaps with at least a second portion of the second portion.

20. The optoelectronic device of claim 19, wherein the NIC is disposed on the surface of the device in the second part, and the conductive coating is disposed on the NIC therein.

21. The optoelectronic device of claim 20, wherein the conductive coating is spaced apart from the NIC in cross-section.

22. The optoelectronic device of claim 15, wherein the conductive coating is electrically coupled to an auxiliary electrode.

23. The optoelectronic device of claim 15, wherein the second portion comprises at least one additional emission region.

24. The optoelectronic device of claim 23, wherein at least one of the additional emission regions of the second portion of the device comprises a first electrode, a second electrode, and a semiconductor layer between the first electrode and the second electrode, wherein the second electrode comprises the conductive coating.

25. The optoelectronic device of claim 23, wherein the wavelength of light emitted from the at least one additional emitting region of the second portion of the device is different from the wavelength of light emitted from the at least one emitting region of the first portion of the device.

26. The optoelectronic device of claim 15, wherein the conductive coating comprises an auxiliary electrode.

27. The optoelectronic device of claim 1, wherein the second portion comprises at least one emission region.

28. The optoelectronic device of claim 27, wherein the first portion comprises at least a portion of the non-emitting region.

29. The photoelectric device of claim 27, wherein the first portion is substantially light-transmitting.

30. The optoelectronic device of claim 27, further comprising a first electrode, a second electrode, and a semiconductor layer between the first electrode and the second electrode, wherein the second electrode extends in the first portion between the NIC and the semiconductor layer.

31. The optoelectronic device of claim 30, wherein the second electrode extends in the second portion between the conductive coating and the semiconductor layer.

32. The optoelectronic device of claim 27, further comprising a first electrode, a semiconductor layer between the first electrode and the conductive coating, wherein the conductive coating comprises a second electrode of the device.

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