Conductive Pattern, Method for Manufacturing the Same, and Display Device Including the Conductive Pattern

Abstract

The present invention provides a conductive pattern, a method of manufacturing the same, and a display device including the conductive pattern. The conductive pattern includes a metal layer and a first low-reflection layer disposed on a first surface of the metal layer, and the first low-reflection layer includes niobium carbide (NbC) and zinc oxide (ZnO). Since the display device according to an exemplary embodiment includes the conductive pattern, the reflectance of the display device is reduced, and the visibility of an image displayed from the display device is improved.

Description

Technical Field

[0001] Exemplary embodiments relate to a conductive pattern. More specifically, exemplary embodiments relate to a conductive pattern, a method of manufacturing the same, and a display device including the conductive pattern. Background Art

[0002] An electronic device generally includes a conductive pattern, such as a wiring or an electrode, to transmit an electrical signal. A display device, such as an organic light emitting display device or a liquid crystal display device, generally includes a conductive pattern, such as a wiring or an electrode, to transmit an electrical signal for displaying an image or an electrical signal for sensing an input. Summary of the Invention

[0003] When external light incident on a display device is reflected by the display device, the visibility of an image displayed by the display device may deteriorate. Since the conductive pattern included in the display device includes a material having a relatively high reflectivity, such as a metal or the like, the external light incident on the display device may be reflected by the conductive pattern, and the visibility of the image displayed by the display device may deteriorate.

[0004] Exemplary embodiments provide a conductive pattern having a relatively low reflectivity.

[0005] Exemplary embodiments provide a display device having a relatively low reflectivity.

[0006] Exemplary embodiments provide a method of manufacturing a conductive pattern having a relatively low reflectivity to reduce manufacturing costs and time.

[0007] According to an embodiment, the conductive pattern may include a metal layer and a first low reflectivity layer disposed on a first surface of the metal layer, the first low reflectivity layer including niobium carbide (NbC) and zinc oxide (ZnO).

[0008] In an exemplary embodiment, the amount of zinc oxide included in the first low reflectivity layer may be less than or equal to about 50 atomic percent (at.%).

[0009] In an exemplary embodiment, the first low reflectivity layer may further include a metal.

[0010] In an exemplary embodiment, the metal may include aluminum (Al).

[0011] In an exemplary embodiment, the amount of the metal included in the first low reflectivity layer may be less than or equal to about 5 mass percent.

[0012] In an exemplary embodiment, the conductive pattern further includes a second low reflectivity layer disposed on a second surface of the metal layer opposite to the first surface, the second low reflectivity layer including niobium carbide and zinc oxide.

[0013] In an exemplary embodiment, the amount of zinc oxide included in the second low-reflection layer may be substantially equal to the amount of zinc oxide included in the first low-reflection layer.

[0014] In an exemplary embodiment, the sidewall of the first low-reflection layer may contact the sidewall of the metal layer.

[0015] In an exemplary embodiment, the thickness of the first low-reflection layer may be less than the thickness of the metal layer.

[0016] In an exemplary embodiment, the metal layer may include at least one of copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo).

[0017] A display device according to an embodiment may include a substrate, a transistor disposed on the substrate, a display element disposed on the transistor, a package layer covering the display element, and a conductive pattern disposed between the substrate and the package layer or on the package layer. The conductive pattern may include a metal layer and a first low-reflection layer disposed on a first surface of the metal layer, and the first low-reflection layer includes niobium carbide (NbC) and zinc oxide (ZnO).

[0018] In an exemplary embodiment, the metal layer may be disposed between the substrate and the first low-reflection layer.

[0019] In an exemplary embodiment, the first low-reflection layer may be disposed between the substrate and the metal layer.

[0020] In an exemplary embodiment, the conductive pattern may further include a second low-reflection layer disposed on a second surface of the metal layer opposite to the first surface, and the second low-reflection layer includes niobium carbide and zinc oxide.

[0021] In an exemplary embodiment, the conductive pattern may be disposed between the substrate and the package layer, and may be a gate line for transmitting a gate signal to the transistor or a data line for transmitting a data signal to the transistor.

[0022] In an exemplary embodiment, the conductive pattern may be disposed on the package layer, and may be a sensing electrode for sensing an input from a user.

[0023] A method of manufacturing a conductive pattern according to an embodiment may include forming a metal material layer, forming a first low-reflection material layer on a first surface of the metal material layer, the first low-reflection material layer including niobium carbide (NbC) and zinc oxide (ZnO), and etching the metal material layer and the first low-reflection material layer integrally with an etchant.

[0024] In an exemplary embodiment, the amount of zinc oxide included in the first low-reflection material layer may be less than or equal to about 50 at.%.

[0025] In an exemplary embodiment, the etching rate of the metal material layer etched by an etchant may be substantially equal to the etching rate of the first low-reflection material layer etched by the etchant.

[0026] In an exemplary embodiment, the method may further include forming a second low-reflection material layer on a second surface of the metal material layer opposite to the first surface, the second low-reflection material layer including niobium carbide and zinc oxide. The second low-reflection material layer, the metal material layer, and the first low-reflection material layer may be etched integrally by an etchant.

[0027] A conductive pattern according to an exemplary embodiment may include a first low-reflection layer disposed on a first surface of a metal layer and including niobium carbide and zinc oxide so that the reflectivity of the conductive pattern can be reduced. Further, a display device according to an exemplary embodiment may include a conductive pattern so that the reflectivity of the display device can be reduced.

[0028] In a method of manufacturing a conductive pattern, the metal material layer and the first low-reflection material layer may be etched integrally by an etchant so that the manufacturing cost and time of the conductive pattern can be reduced. Description of the Drawings

[0029] Explanatory, non-limiting embodiments will be understood more clearly from the following detailed description in conjunction with the accompanying drawings.

[0030] Figure 1 A cross-sectional view for explaining an exemplary embodiment of a conductive pattern.

[0031] Figure 2 A diagram for explaining the reflectivity of an exemplary embodiment of a conductive pattern.

[0032] Figure 3 and Figure 4 A cross-sectional view for explaining an exemplary embodiment of a method of manufacturing a conductive pattern.

[0033] Figure 5 A diagram for explaining the etching rate of a first low-reflection material layer according to the amount of zinc oxide included in the first low-reflection material layer.

[0034] Figure 6 A cross-sectional view for explaining an exemplary embodiment of a conductive pattern.

[0035] Figure 7 A cross-sectional view for explaining an exemplary embodiment of a conductive pattern.

[0036] Figure 8 and Figure 9 A cross-sectional view for explaining an exemplary embodiment of a method of manufacturing a conductive pattern.

[0037] Figure 10A cross-sectional view for explaining an exemplary embodiment of a display device.

[0038] Figure 11 A cross-sectional view for explaining an exemplary embodiment of a display device.

[0039] Figure 12 A cross-sectional view for explaining an exemplary embodiment of a display device. Detailed Embodiment

[0040] Hereinafter, a conductive pattern, a method of manufacturing the conductive pattern, and a display device according to an embodiment will be explained in detail with reference to the accompanying drawings.

[0041] It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Thus, a "first element", "component", "region", "layer", or "section" discussed below may be referred to as a second element, component, region, layer, or section without departing from the teachings herein.

[0042] The terms used herein are for the purpose of describing particular embodiments only and are not intended to be limiting. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms, including "at least one", unless the context clearly indicates otherwise. "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises" and / or "comprising", or "includes" and / or "including" when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and / or groups thereof.

[0043] In addition, relative terms, such as "lower" or "bottom" and "upper" or "top", may be used herein to describe the relationship of one element to another as illustrated in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in a figure is flipped, an element described as on the "lower" side of another element will then be oriented on the "upper" side of the other element. The exemplary term "lower" can, therefore, encompass both an orientation of "lower" and "upper", depending on the particular orientation of the figure. Similarly, if the device in a figure is flipped, an element described as "beneath" or "under" another element will then be oriented "above" the other element. The exemplary terms "beneath" or "under" can, therefore, encompass both an orientation of above and beneath.

[0044] For ease of description, spatial relative terms, such as "beneath", "below", "lower", "above", "upper", etc., may be used herein to describe the relationship of one element or feature to another (other elements) or feature (other features) as illustrated in the figures. It should be understood that spatial relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figure is flipped, an element described as "below" or "beneath" another element or feature will then be oriented "above" the other element or feature. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatial relative descriptors used herein are to be interpreted accordingly.

[0045] Taking into account the measurements discussed and the errors associated with the measurements of a particular quantity (i.e., the limitations of the measurement system), as used herein, "about" or "approximately" includes the recited value and means within an acceptable deviation of the particular value as determined by one of ordinary skill in the art. For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the recited value.

[0046] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It should be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the context of this disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0047] The exemplary embodiments are described with reference to cross-sectional illustrations that are schematic illustrations of ideal embodiments. As such, variations in the shapes of the illustrations due to, for example, manufacturing techniques and / or tolerances are to be expected. Accordingly, the embodiments described herein should not be construed as limited to the specific shapes of regions as illustrated herein, but include deviations in shapes due to, for example, manufacturing. For example, regions illustrated as or described as flat may typically have rough features and / or non-linear features. Also, the sharp corners illustrated may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the exact shape of the regions and are not intended to limit the scope of the claims.

[0048] Figure 1 It is a cross-sectional view for illustrating a conductive pattern.

[0049] Reference Figure 1 , the conductive pattern 100 may be disposed on the base layer BSL. The base layer BSL may provide a space on which the conductive pattern 100 is disposed and may include various materials for supporting the conductive pattern 100. In an exemplary embodiment, the base layer BSL may be an inorganic insulating substrate including inorganic materials such as glass or quartz; or an organic insulating substrate including organic materials such as polyimide PI. In another exemplary embodiment, the base layer BSL may be an inorganic insulating layer including inorganic materials such as silicon oxide, silicon nitride, or silicon oxynitride; or an organic insulating layer including organic materials. In another exemplary embodiment, the base layer BSL may be a semiconductor layer including semiconductor materials such as amorphous silicon, polysilicon, or oxide semiconductor; or a conductive layer including conductive materials such as metal.

[0050] The conductive pattern 100 may have conductivity and may have a specific planar shape. The conductive pattern 100 may be used in various electronic devices. For example, in an exemplary embodiment, the conductive pattern 100 may be used in a display device such as a liquid crystal display device or an organic light emitting display device. The conductive pattern 100 may be used as an electrode or a floating electrode, etc., and as a wiring for transmitting an electrical signal. For example, in an exemplary embodiment, the conductive pattern 100 may be used as a gate line, a data line, a power supply line, or a voltage supply line, etc., and may be used as a gate electrode, a source electrode, or a drain electrode of a transistor included in a display device. Further, the conductive pattern 100 may be used as a sensing electrode of an input sensing unit included in a display device. Also, the conductive pattern 100 may be used as a light blocking pattern of a display device.

[0051] The conductive pattern 100 may include a metal layer 110 and a first low-reflection layer 120 disposed on the metal layer 110.

[0052] The metal layer 110 may provide conductivity to the conductive pattern 100. The metal layer 110 may include a metal. For example, in an exemplary embodiment, the metal layer 110 may include at least one of copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo). Since the metal layer 110 includes or is composed of a metal, the resistance of the metal layer 110 may be less than the resistance of the first low-reflection layer 120. The metal layer 110 may have a single-layer structure or a multi-layer structure.

[0053] The first low-reflection layer 120 may be disposed on the first surface 111 of the metal layer 110. The metal layer 110 may include a first surface 111 and a second surface 112 that face each other, and the first low-reflection layer 120 may be disposed on the first surface 111 of the metal layer 110. In an exemplary embodiment, the first surface 111 and the second surface 112 of the metal layer 110 may be the upper surface and the lower surface of the metal layer 110, respectively. In such an exemplary embodiment, the metal layer 110 may be disposed on the base layer BSL, and the first low-reflection layer 120 may be disposed on the metal layer 110. For example, in an exemplary embodiment, the first surface 111 of the metal layer 110 may contact the lower surface of the first low-reflection layer 120, and the second surface 112 of the metal layer 110 may contact the upper surface of the base layer BSL.

[0054] The first low-reflection layer 120 may cover the first surface 111 of the metal layer 110, thereby reducing the reflectivity of external light reflected by the first surface 111 of the metal layer 110. For example, in an exemplary embodiment, the first low-reflection layer 120 may cover the upper surface of the metal layer 110, thereby reducing or substantially preventing external light incident on the upper surface of the metal layer 110 from being reflected by the upper surface of the metal layer 110. Since the metal layer 110 includes a metal, the metal layer 110 may have a relatively high reflectivity. When the first low-reflection layer 120 is not disposed on the first surface 111 of the metal layer 110, external light incident on the display device including the conductive pattern 100 may be reflected by the first surface 111 of the metal layer 110. In this case, the reflectivity of the external light of the display device may increase, so the visibility of the image displayed by the display device may deteriorate. The first low-reflection layer 120 may be used to reduce the reflectivity of external light by the conductive pattern 100.

[0055] In an exemplary embodiment, the first low-reflection layer 120 may include niobium carbide (NbC) and zinc oxide (ZnO).

[0056] Niobium carbide may have a relatively low reflectivity. Accordingly, niobium carbide may have low reflection properties. The niobium carbide included in the first low-reflection layer 120 may be used to reduce the reflectivity of the first low-reflection layer 120.

[0057] Zinc oxide can increase the etching rate of the first low-reflection layer 120 in the process of forming the first low-reflection layer 120. When the first low-reflection layer 120 does not include zinc oxide, the first low-reflection layer 120 may not be etched, or the etching rate of the first low-reflection layer 120 may be less than the etching rate of the metal layer 110. Therefore, the conductive pattern 100 may not have a uniform sidewall profile. The first low-reflection layer 120 may include zinc oxide so that the etching rate of the metal layer 110 may be substantially equal to the etching rate of the first low-reflection layer 120.

[0058] In an exemplary embodiment, the amount of zinc oxide included in the first low-reflection layer 120 may be less than or equal to about 50 atomic percent (at.%). In other words, the ratio of the amount of atoms of zinc oxide included in the first low-reflection layer 120 to the amount of atoms of the total material may be less than or equal to about 50%. When the amount of zinc oxide included in the first low-reflection layer 120 is greater than about 50 at.%, the etching rate of the first low-reflection layer 120 may increase excessively. Therefore, the conductive pattern 100 may not have a uniform sidewall profile. In this regard, the amount of zinc oxide included in the first low-reflection layer 120 may be less than or equal to about 50 at.% so that the etching rate of the metal layer 110 may be substantially equal to the etching rate of the first low-reflection layer 120.

[0059] The first low-reflection layer 120 may further include a relatively small amount of impurities. In an exemplary embodiment, the first low-reflection layer 120 may include a metal as an impurity. For example, in an exemplary embodiment, the first low-reflection layer 120 may include aluminum (Al) as an impurity. The metal can be used to stabilize the plasma release in the process of depositing the first low-reflection layer 120 using sputtering or the like.

[0060] In an exemplary embodiment, the amount of the metal included in the first low-reflection layer 120 may be less than or equal to about 5 weight percent (wt.%). In other words, the ratio of the mass of the metal included in the first low-reflection layer 120 to the mass of the total material may be less than or equal to about 5%. In this case, the ratio of the mass of niobium carbide and zinc oxide included in the first low-reflection layer 120 to the mass of the total material may be greater than or equal to about 95%.

[0061] In an exemplary embodiment, the width of the lower surface of the first low-reflection layer 120 may be substantially equal to the width of the upper surface of the metal layer 110. In this case, the first surface 111 of the metal layer 110 may be substantially completely covered by the first low-reflection layer 120. Therefore, external light can be prevented from being reflected by the first surface 111 of the metal layer 110.

[0062] In an exemplary embodiment, the sidewall 120S of the first low-reflection layer 120 may contact the sidewall 110S of the metal layer 110. In other words, the sidewall 120S of the first low-reflection layer 120 may not protrude from the sidewall 110S of the metal layer 110 in the lateral direction or may not be recessed relative to the sidewall 110S of the metal layer 110. When the sidewall 120S of the first low-reflection layer 120 protrudes beyond the sidewall 110S of the metal layer 110 in the lateral direction, the insulating layer covering the conductive pattern 100 may be damaged by the protruding portion of the first low-reflection layer 120. When the sidewall 120S of the first low-reflection layer 120 is recessed relative to the sidewall 110S of the metal layer 110 in the lateral direction, a part of the first surface 111 of the metal layer 110 may be exposed, so that the reflectivity of the conductive pattern 100 may be increased. The sidewall 120S of the first low-reflection layer 120 may contact the sidewall 110S of the metal layer 110 so that the conductive pattern 100 may have a uniform sidewall profile.

[0063] In an exemplary embodiment, the thickness 120T of the first low-reflection layer 120 may be less than the thickness 110T of the metal layer 110. When the thickness 120T of the first low-reflection layer 120 is relatively large, the size of the step structure caused by the conductive pattern 100 may be increased, so that the upper surface profile of the insulating layer covering the conductive pattern 100 may deteriorate. Although the thickness 120T of the first low-reflection layer 120 is less than the thickness 110T of the metal layer 110, when the thickness 120T of the first low-reflection layer 120 is greater than a predetermined size, the reflectivity of the first low-reflection layer 120 may remain constant.

[0064] Figure 2 A diagram for explaining an exemplary embodiment of the reflectivity of a conductive pattern. Figure 2 Illustrated is the reflectivity of a conductive pattern 100 including a metal layer 110 (including copper (Cu)) and a first low-reflection layer 120 (including niobium carbide (NbC) and zinc oxide (ZnO)) for visible light having a wavelength of about 380 nanometers (nm) to about 780 nm.

[0065] [Table 1]

[0066] First Embodiment Second Embodiment 450 nm 23.29％ 19.29％ 550 nm 15.26％ 12.85％ 650 nm 8.88％ 2.04％ Average 17.38％ 10.54％

[0067] Table 1 illustrates the reflectivity of a conductive pattern 100 including a metal layer 110 (including copper) and a first low-reflection layer 120 (including niobium carbide and zinc oxide) for visible light having wavelengths of about 450 nm, about 550 nm, and about 650 nm. According to Figure 2 and the first embodiment in Table 1, the conductive pattern 100 may include a first low-reflection layer 120 (including about 55 wt.% of niobium carbide and about 40 wt.% of zinc oxide). According to Figure 2The conductive pattern 100 of the second embodiment in Table 1 may include a first low-reflection layer 120 (including about 50 wt.% of niobium carbide and about 45 wt.% of zinc oxide).

[0068] Reference Figure 2 , for visible light having a wavelength of about 380 nm to about 780 nm, the reflectivity of the conductive pattern 100 may be less than or equal to about 30%. Further, referring to Table 1, the average reflectivity of the conductive pattern 100 for visible light may be less than or equal to about 20%. In a comparative example according to the prior art, the average reflectivity of a conductive pattern having a single-layer structure (including a molybdenum (Mo) layer) may be about 60% to about 70%, the average reflectivity of a conductive pattern having a multi-layer structure (including a titanium (Ti) layer, an aluminum (Al) layer, and a titanium (Ti) layer) may be about 60% to about 70%, and the average reflectivity of a conductive pattern having a multi-layer structure (including a titanium (Ti) layer and a copper (Cu) layer) may be about 80% to about 90%. However, in an exemplary embodiment according to the present invention, the average reflectivity of the conductive pattern 100 including the metal layer 110 and the first low-reflection layer 120 may be less than or equal to about 20%. Therefore, the reflectivity of a display device including the conductive pattern 100 can be reduced.

[0069] Figure 3 And Figure 4 FIGS. are cross-sectional views illustrating exemplary embodiments of a method of manufacturing a conductive pattern. Figure 3 And Figure 4 may illustrate a method of manufacturing Figure 1 the conductive pattern 100 illustrated in

[0070] Reference Figure 3 , a metal material layer 110a and a first low-reflection material layer 120a may be sequentially disposed on a base layer BSL, and a photoresist pattern 140 may be disposed on the first low-reflection material layer 120a.

[0071] First, the metal material layer 110a may be disposed on the base layer BSL such that the base layer BSL may be disposed on the lower surface 112a of the metal material layer 110a. A metal including at least one of copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo) may be deposited on the base layer BSL by sputtering to form the metal material layer 110a on the base layer BSL.

[0072] Then, the first low-reflection material layer 120a may be disposed on the metal material layer 110a. Niobium carbide (NbC), zinc oxide (ZnO), and a small amount of impurities may be deposited on the first surface 111a of the metal material layer 110a by sputtering to form the first low-reflection material layer 120a on the metal material layer 110a.

[0073] In an exemplary embodiment, the impurity used when forming the first low-reflection material layer 120a may be a metal, such as aluminum (Al) or the like. In an exemplary embodiment, the metal may be used to stabilize the plasma release in the process of depositing the first low-reflection material layer 120a using sputtering or the like.

[0074] Then, the photoresist pattern 140 may be disposed on the first low-reflection material layer 120a.

[0075] Reference Figure 4 , the photoresist pattern 140 may be used as an etching mask to etch the first low-reflection material layer 120a (reference Figure 3 ) and the metal material layer 110a (reference Figure 3 ) to form a conductive pattern 100 including the metal layer 110 and the first low-reflection layer 120.

[0076] The first low-reflection material layer 120a and the metal material layer 110a may be etched by wet etching. The first low-reflection material layer 120a and the metal material layer 110a may be etched integrally by an etchant. In other words, the first low-reflection material layer 120a and the metal material layer 110a may not be etched separately, and may be etched by a single etching process using a single etchant.

[0077] In an exemplary embodiment, the metal material layer 110a may include a metal, such as Cu, Al, Ti, or Mo, etc., and the metal may be etched by wet etching. Since niobium carbide included in the first low-reflection material layer 120a is not etched by wet etching, when the first low-reflection material layer 120a only includes niobium carbide, the first low-reflection material layer 120a may not be etched together with the metal material layer 110a. However, in the illustrated exemplary embodiment, the first low-reflection material layer 120a may include zinc oxide that can be etched together with niobium carbide, so the first low-reflection material layer 120a may be etched together with the metal material layer 110a. Accordingly, the first low-reflection material layer 120a and the metal material layer 110a may be etched by a single etching process using a single etchant, so that the manufacturing cost and time of the conductive pattern 100 can be reduced.

[0078] In an exemplary embodiment, the amount of zinc oxide included in the first low-reflection material layer 120a may be less than or equal to about 50 at.%. When the amount of zinc oxide included in the first low-reflection material layer 120a is greater than about 50 at.%, the etching rate of the first low-reflection material layer 120a may increase excessively. In this case, the etching rate of the first low-reflection material layer 120a may even be greater than the etching rate of the metal material layer 110a, so that the first low-reflection material layer 120a may not be etched together with the metal material layer 110a.

[0079] Figure 5 A graph for explaining the etching rate of the first low-reflection material layer 120a according to the amount of zinc oxide included in the first low-reflection material layer 120a.

[0080] Reference Figure 5 , when the amount of zinc oxide (ZnO) included in the first low-reflection material layer 120a increases, the etching rate of the first low-reflection material layer 120a may increase. In other words, the amount of zinc oxide included in the first low-reflection material layer 120a may be proportional to the etching rate of the first low-reflection material layer 120a.

[0081] The metal material layer 110a may include Cu, Al, Ti, Mo, etc. The etching rate of Cu may be about 150 angstroms per second to about The etching rate of Al may be about to about The etching rate of Ti may be about to about And the etching rate of Mo may be about to about When the amount of zinc oxide included in the first low-reflection material layer 120a is greater than about 50 at.%, the etching rate of the first low-reflection material layer 120a may be greater than about [[ID=2,7]]Accordingly, since the amount of etching of the first low-reflection material layer 120a is greater than the amount of etching of the metal material layer 110a, a conductive pattern with a non-uniform sidewall profile may be provided. However, in the illustrated exemplary embodiment, since the amount of zinc oxide included in the first low-reflection material layer 120a is less than or equal to about 50 at.%, the amount of zinc oxide included in the first low-reflection material layer 120a may be controlled such that the etching rate of the first low-reflection material layer 120a may be substantially equal to the etching rate of the metal material layer 110a. Accordingly, a conductive pattern 100 with a uniform sidewall profile may be provided.

[0082] Figure 6 A cross-sectional view for explaining an exemplary embodiment of a conductive pattern. Reference Figure 6 The described conductive pattern may be substantially the same as the conductive pattern described in reference Figure 1 , except for the position of the first low-reflection layer 120. Accordingly, the description of the elements of the conductive pattern described in reference Figure 6 that are substantially the same or similar to the elements of the conductive pattern described in reference Figure 1 will not be repeated.

[0083] Reference Figure 6, the first low-reflection layer 120 may be disposed on the first surface 111 of the metal layer 110. The metal layer 110 may include a first surface 111 and a second surface 112 opposite to each other, and the first low-reflection layer 120 may be disposed on the first surface 111 of the metal layer 110. In an exemplary embodiment, the first surface 111 and the second surface 112 of the metal layer 110 may be the lower surface and the upper surface of the metal layer 110, respectively. In such an exemplary embodiment, the first low-reflection layer 120 may be disposed on the base layer BSL, and the metal layer 110 may be disposed on the first low-reflection layer 120. For example, in an exemplary embodiment, the first surface 111 of the metal layer 110 may contact the upper surface of the first low-reflection layer 120.

[0084] The first low-reflection layer 120 may cover the first surface 111 of the metal layer 110, thereby reducing the reflectivity of external light reflected by the first surface 111 of the metal layer 110. For example, in an exemplary embodiment, the first low-reflection layer 120 may cover the lower surface of the metal layer 110, thereby reducing or substantially preventing external light incident on the lower surface of the metal layer 110 from being reflected by the lower surface of the metal layer 110.

[0085] Figure 7 A cross-sectional view for explaining an exemplary embodiment of the conductive pattern. Refer to Figure 7 The described conductive pattern may be substantially the same as the conductive pattern described in reference Figure 1 , except that a second low-reflection layer 130 is added. Accordingly, the description of the elements of the conductive pattern described in reference Figure 7 that are substantially the same as or similar to the elements of the conductive pattern described in reference Figure 1 will not be repeated.

[0086] Refer to Figure 7 , the conductive pattern 100 may include a second low-reflection layer 130, a metal layer 110 disposed on the second low-reflection layer 130, and a first low-reflection layer 120 disposed on the metal layer 110.

[0087] The second low-reflection layer 130 may be disposed on the second surface 112 of the metal layer 110. The first low-reflection layer 120 may be disposed on the first surface 111 of the metal layer 110, and the second low-reflection layer 130 may be disposed on the second surface 112 of the metal layer 110. In an exemplary embodiment, the first surface 111 and the second surface 112 of the metal layer 110 may be the upper surface and the lower surface of the metal layer 110, respectively. In such an exemplary embodiment, the second low-reflection layer 130 may be disposed on the base layer BSL, the metal layer 110 may be disposed on the second low-reflection layer 130, and the first low-reflection layer 120 may be disposed on the metal layer 110. For example, in an exemplary embodiment, the first surface 111 of the metal layer 110 may contact the lower surface of the first low-reflection layer 120, and the second surface 112 of the metal layer 110 may contact the upper surface of the second low-reflection layer 130.

[0088] The second low-reflection layer 130 may cover the second surface 112 of the metal layer 110, thereby reducing the reflectance of external light reflected by the second surface 112 of the metal layer 110. For example, in an exemplary embodiment, the second low-reflection layer 130 may cover the lower surface of the metal layer 110, thereby reducing or substantially preventing external light incident on the lower surface of the metal layer 110 from being reflected by the lower surface of the metal layer 110. When the second low-reflection layer 130 is not disposed on the second surface 112 of the metal layer 110, external light incident on the display device including the conductive pattern 100 may be reflected by the second surface 112 of the metal layer 110. The second low-reflection layer 130 may be used to reduce the reflectance of external light reflected by the conductive pattern 100.

[0089] The second low-reflection layer 130 may include niobium carbide (NbC) and zinc oxide (ZnO). The niobium carbide included in the second low-reflection layer 130 may be used to reduce the reflectance of the second low-reflection layer 130. Zinc oxide may increase the etching rate of the second low-reflection layer 130 in the process of forming the second low-reflection layer 130.

[0090] In an exemplary embodiment, the amount of zinc oxide included in the second low-reflection layer 130 may be substantially equal to the amount of zinc oxide included in the first low-reflection layer 120. When the amount of zinc oxide included in the second low-reflection layer 130 is different from the amount of zinc oxide included in the first low-reflection layer 120, the etching rate of the second low-reflection layer 130 may be different from the etching rate of the first low-reflection layer 120, so that the conductive pattern 100 may not have a uniform sidewall profile. The amount of zinc oxide included in the second low-reflection layer 130 may be substantially equal to the amount of zinc oxide included in the first low-reflection layer 120 so that the etching rate of the second low-reflection layer 130 may be substantially equal to the etching rate of the first low-reflection layer 120.

[0091] The second low-reflection layer 130 may further include a relatively small amount of impurities. In an exemplary embodiment, the second low-reflection layer 130 may include a metal as an impurity. For example, in an exemplary embodiment, the second low-reflection layer 130 may include aluminum (Al) as an impurity. The metal may be used to stabilize the release of plasma in the process of depositing the second low-reflection layer 130, such as by sputtering. In an exemplary embodiment, the amount of the metal included in the second low-reflection layer 130 may be less than or equal to about 5 wt.%.

[0092] In an exemplary embodiment, the width of the upper surface of the second low-reflection layer 130 may be substantially equal to the width of the lower surface of the metal layer 110. In this case, the second surface 112 of the metal layer 110 may be substantially completely covered by the second low-reflection layer 130, so that external light can be prevented from being reflected by the second surface 112 of the metal layer 110.

[0093] In an exemplary embodiment, the sidewalls 120S of the first low-reflection layer 120 and the sidewalls 130S of the second low-reflection layer 130 may contact the sidewalls 110S of the metal layer 110. In other words, the sidewalls 120S of the first low-reflection layer 120 and the sidewalls 130S of the second low-reflection layer 130 may not protrude from the sidewalls 110S of the metal layer 110 or may not be recessed relative to the sidewalls 110S of the metal layer 110 in the lateral direction. When the sidewalls 130S of the second low-reflection layer 130 are recessed relative to the sidewalls 110S of the metal layer 110 in the lateral direction, a part of the second surface 112 of the metal layer 110 may be exposed, so that the reflectivity of the conductive pattern 100 can be increased. The sidewalls 120S of the first low-reflection layer 120 and the sidewalls 130S of the second low-reflection layer 130 may contact the sidewalls 110S of the metal layer 110 so that the conductive pattern 100 can have a uniform sidewall profile.

[0094] In an exemplary embodiment, the thickness 130T of the second low-reflection layer 130 may be less than the thickness 110T of the metal layer 110. When the thickness 130T of the second low-reflection layer 130 is relatively large, the size of the step structure caused by the conductive pattern 100 may be increased, so that the upper surface profile of the insulating layer covering the conductive pattern 100 may deteriorate.

[0095] Figure 8 and Figure 9 A cross-sectional view illustrating an exemplary embodiment of a method of manufacturing a conductive pattern. Figure 8 and Figure 9 may illustrate a method of manufacturing Figure 7 the conductive pattern 100 illustrated in. The description of the method of manufacturing the conductive pattern with reference to Figure 8 and Figure 9 will not be repeated. The method of manufacturing the conductive pattern described with reference to Figure 3 and Figure 4Description of components of the method of the described conductive pattern for components that are substantially the same or similar.

[0096] Reference Figure 8 , the second low-reflection material layer 130a, the metal material layer 110a, and the first low-reflection material layer 120a may be sequentially disposed on the base layer BSL, and the photoresist pattern 140 may be disposed on the first low-reflection material layer 120a.

[0097] First, the second low-reflection material layer 130a may be disposed on the base layer BSL. Niobium carbide (NbC), zinc oxide (ZnO), and a small amount of impurities may be deposited on the base layer BSL by sputtering to form the second low-reflection material layer 130a on the base layer BSL.

[0098] In an exemplary embodiment, the impurities used when forming the second low-reflection material layer 130a may be metals, such as aluminum (Al), etc. The metals may be used to stabilize the release of plasma in the process of depositing the second low-reflection material layer 130a using sputtering or the like.

[0099] Then, the metal material layer 110a may be disposed on the second low-reflection material layer 130a, and the first low-reflection material layer 120a may be disposed on the metal material layer 110a. Then, the photoresist pattern 140 may be disposed on the first low-reflection material layer 120a.

[0100] Reference Figure 9 , the first low-reflection material layer 120a (reference Figure 8 ), the metal material layer 110a (reference Figure 8 ), and the second low-reflection material layer 130a (reference Figure 8 ) may be etched using the photoresist pattern 140 as an etching mask to form the conductive pattern 100 including the second low-reflection layer 130, the metal layer 110, and the first low-reflection layer 120.

[0101] The first low-reflection material layer 120a, the metal material layer 110a, and the second low-reflection material layer 130a may be etched by wet etching. The first low-reflection material layer 120a, the metal material layer 110a, and the second low-reflection material layer 130a may be etched integrally by an etchant. In other words, the first low-reflection material layer 120a, the metal material layer 110a, and the second low-reflection material layer 130a may not be etched separately, and may be etched by a single etching process using a single etchant.

[0102] In an exemplary embodiment, the metal material layer 110a may include a metal such as Cu, Al, Ti, or Mo, etc., and the metal can be etched by wet etching. Since niobium carbide included in each of the first low-reflection material layer 120a and the second low-reflection material layer 130a is not etched by wet etching, when each of the first low-reflection material layer 120a and the second low-reflection material layer 130a includes only niobium carbide, the first low-reflection material layer 120a and the second low-reflection material layer 130a may not be wet-etched together with the metal material layer 110a. However, in the illustrated exemplary embodiment, each of the first low-reflection material layer 120a and the second low-reflection material layer 130a may include zinc oxide that can be wet-etched together with niobium carbide, so the first low-reflection material layer 120a and the second low-reflection material layer 130a may be etched together with the metal material layer 110a. Accordingly, the first low-reflection material layer 120a, the metal material layer 110a, and the second low-reflection material layer 130a can be etched by a single etching process using a single etchant, so that the manufacturing cost and time of the conductive pattern 100 can be reduced.

[0103] In an exemplary embodiment, the amount of zinc oxide included in the second low-reflection material layer 130a may be less than or equal to about 50 at.%. Further, the amount of zinc oxide included in the second low-reflection material layer 130a may be substantially equal to the amount of zinc oxide included in the first low-reflection material layer 120a. In the illustrated exemplary embodiment, since the amount of zinc oxide included in the first low-reflection material layer 120a and the amount of zinc oxide included in the second low-reflection material layer 130a are less than or equal to about 50 at.% and are substantially equal to each other, the amount of zinc oxide included in the first low-reflection material layer 120a and the amount of zinc oxide included in the second low-reflection material layer 130a can be controlled such that the etching rate of the first low-reflection material layer 120a, the etching rate of the second low-reflection material layer 130a, and the etching rate of the metal material layer 110a can be substantially equal. Accordingly, a conductive pattern 100 having a uniform sidewall profile can be provided.

[0104] Figure 10 A cross-sectional view for explaining an exemplary embodiment of a display device. Refer to Figure 10 The described display device may be a liquid crystal display device 200 including the above-mentioned conductive pattern 100.

[0105] Refer to Figure 10, the liquid crystal display device 200 may include a light guide plate LGP, a first polarizer POL1, a substrate 210, a first conductive layer, a gate insulating layer 230, an active layer ACT, a second conductive layer, a passivation layer 250, a first electrode 261, a liquid crystal layer 262, a second electrode 263, a second polarizer POL2, an overcoat OC, a color filter CF, a black matrix BM, and a packaging layer 270. Each of the above-mentioned elements may have a single-layer structure or a multi-layer structure. Other elements may be further provided between the above-mentioned elements.

[0106] The substrate 210 may include or be composed of an insulating material. In an exemplary embodiment, the substrate 210 may include or be composed of the following: inorganic materials such as glass or quartz, etc.; or organic materials such as polyimide, etc. The substrate 210 may be a rigid substrate or a flexible substrate.

[0107] The light guide plate LGP may be disposed below the substrate 210. The light guide plate LGP may guide the light generated from the light source towards the substrate 210.

[0108] The first polarizer POL1 may be disposed on the lower surface of the substrate 210. The first polarizer POL1 may be a coated polarizer or a wire grid polarizer, etc.

[0109] The first conductive layer may be disposed on the substrate 210. The first conductive layer may include gate lines 221 and gate electrodes 222 of transistors TR. The gate lines 221 may transmit gate signals to the gate electrodes 222.

[0110] The above-mentioned conductive pattern 100 may be applied to the first conductive layer. In other words, the first conductive layer may include a metal layer and a first low-reflection layer disposed on the first surface of the metal layer and including niobium carbide and zinc oxide. In an exemplary embodiment, the metal layer of the conductive pattern 100 may be disposed between the substrate 210 and the first low-reflection layer of the conductive pattern 100, as illustrated in Figure 10 In this case, the reflection of external light incident on the front surface (e.g., the display surface) of the liquid crystal display device 200 and reflected by the conductive pattern 100 may be reduced or substantially prevented. Therefore, the reflectance of external light on the front surface of the liquid crystal display device 200 may be reduced.

[0111] The gate insulating layer 230 may be disposed on the first conductive layer. In an exemplary embodiment, the gate insulating layer 230 may include or be composed of the following: inorganic insulating materials such as silicon nitride or silicon oxide, etc.

[0112] The active layer ACT and the second conductive layer may be disposed on the gate insulating layer 230. The active layer ACT may overlap with the gate electrode 222. The active layer ACT may include or consist of the following: amorphous silicon, polysilicon, or an oxide semiconductor, etc. The second conductive layer may include the data line 241, the source electrode 242 and the drain electrode 243 of the transistor TR. The data line 241 may transmit a data signal to the source electrode 242. The source electrode 242 and the drain electrode 243 may be connected to the active layer ACT. The gate electrode 222, the active layer ACT, the source electrode 242 and the drain electrode 243 may form the transistor TR.

[0113] The above-mentioned conductive pattern 100 may be applied to the second conductive layer. In other words, the second conductive layer may include a metal layer and a first low-reflection layer disposed on the first surface of the metal layer and including niobium carbide and zinc oxide.

[0114] The passivation layer 250 may be disposed on the second conductive layer. In an exemplary embodiment, the passivation layer 250 may include or consist of the following: an inorganic insulating material, such as silicon nitride or silicon oxide, etc.; and / or an organic insulating material, such as polyimide, etc.

[0115] The first electrode 261 may be disposed on the passivation layer 250. The first electrode 261 may be connected to the drain electrode 243. The second electrode 263 may be disposed on the first electrode 261. Each of the first electrode 261 and the second electrode 263 may include or consist of a transparent conductive material.

[0116] The liquid crystal layer 262 may be disposed between the first electrode 261 and the second electrode 263. The liquid crystal layer 262 may include liquid crystal molecules. The arrangement direction of the liquid crystal molecules may be controlled by an electric field generated between the first electrode 261 and the second electrode 263. Based on the electric field generated between the first electrode 261 and the second electrode 263, the liquid crystal layer 262 may control the light transmittance of the light provided by the light guide plate LGP, and may emit light toward the encapsulation layer 270. The first electrode 261, the liquid crystal layer 262 and the second electrode 263 may form the display element DE.

[0117] The second polarizer POL2 may be disposed on the second electrode 263. The second polarizer POL2 may be a coated polarizer or a wire grid polarizer, etc. The outer coating OC may be disposed on the second polarizer POL2.

[0118] The color filter CF may be disposed on the outer coating OC. The color filter CF may overlap with the first electrode 261. The color filter CF may convert the wavelength of the light provided by the liquid crystal layer 262, and may emit light toward the encapsulation layer 270.

[0119] The black matrix BM can be disposed on the outer coating OC. The black matrix BM can be adjacent to the color filter CF and can partially overlap with the color filter CF. The black matrix BM can block the leakage of light.

[0120] The encapsulation layer 270 can be disposed on the color filter CF and the black matrix BM. The encapsulation layer 270 can include or be composed of an insulating material. In an exemplary embodiment, the encapsulation layer 270 can include or be composed of the following: inorganic materials such as glass or quartz, etc.; or organic materials such as polyimide, etc. The encapsulation layer 270 can be a rigid substrate or a flexible substrate.

[0121] In an embodiment, the liquid crystal display device 200 can include a conductive pattern 100 so that the reflectance of external light on the display surface of the liquid crystal display device 200 can be reduced. Accordingly, the visibility of the image displayed by the liquid crystal display device 200 can be improved.

[0122] Figure 11 A cross-sectional view for explaining an exemplary embodiment of a display device. Refer to Figure 11 The described display device can be a bottom-emitting organic light-emitting display device 300 including the above-mentioned conductive pattern 100.

[0123] Refer to Figure 11 , the bottom-emitting organic light-emitting display device 300 can include a substrate 310, an active layer ACT, a gate insulating layer GIL, a first conductive layer, an insulating interlayer 330, a second conductive layer, a passivation layer 350, a first electrode 361, a pixel defining layer PDL, an emission layer 362, a second electrode 363, and an encapsulation layer 370. Each of the above-mentioned elements can have a single-layer structure or a multi-layer structure. Other elements can be further disposed between the above-mentioned elements.

[0124] The active layer ACT can be disposed on the substrate 310. The active layer ACT can include or be composed of the following: amorphous silicon, polycrystalline silicon, or oxide semiconductor, etc.

[0125] The gate insulating layer GIL can be disposed on the active layer ACT. In an exemplary embodiment, the gate insulating layer GIL can include or be composed of the following: inorganic insulating materials such as silicon nitride or silicon oxide, etc.

[0126] The first conductive layer can be disposed on the gate insulating layer GIL. The first conductive layer can include a gate line 321 and a gate electrode 322 of a transistor TR. The gate electrode 322 can overlap with the active layer ACT.

[0127] The above-described conductive pattern 100 may be applied to the first conductive layer. In other words, the first conductive layer may include a metal layer and a first low-reflection layer disposed on a first surface of the metal layer and including niobium carbide and zinc oxide. In an exemplary embodiment, the first low-reflection layer of the conductive pattern 100 may be disposed between the substrate 310 and the metal layer of the conductive pattern 100, as Figure 11 illustrated. In other words, the first low-reflection layer may be disposed on a lower surface of the metal layer. In this case, the reflection of external light incident on the rear surface (e.g., display surface) of the bottom-emission type organic light-emitting display device 300 and reflected by the conductive pattern 100 may be reduced or substantially prevented. Thus, the reflectance of external light on the rear surface of the bottom-emission type organic light-emitting display device 300 may be reduced.

[0128] The insulating interlayer 330 may be disposed on the first conductive layer. In an exemplary embodiment, the insulating interlayer 330 may include or consist of an inorganic insulating material such as silicon nitride or silicon oxide.

[0129] The second conductive layer may be disposed on the insulating interlayer 330. The second conductive layer may include data lines 341, a source electrode 342, and a drain electrode 343 of the transistor TR. The active layer ACT, the gate electrode 322, the source electrode 342, and the drain electrode 343 may form the transistor TR.

[0130] The above-described conductive pattern 100 may be applied to the second conductive layer. In other words, the second conductive layer may include a metal layer and a first low-reflection layer disposed on a first surface of the metal layer and including niobium carbide and zinc oxide.

[0131] The passivation layer 350 may be disposed on the second conductive layer. In an exemplary embodiment, the passivation layer 350 may include or consist of an inorganic insulating material such as silicon nitride or silicon oxide; and / or an organic insulating material such as polyimide.

[0132] The first electrode 361 may be disposed on the passivation layer 350. The pixel defining layer PDL may be disposed on the first electrode 361. A pixel opening exposing at least a portion of the first electrode 361 may be defined in the pixel defining layer PDL. In an exemplary embodiment, the pixel defining layer PDL may include or consist of an inorganic insulating material; and / or an organic insulating material such as polyimide.

[0133] The emission layer 362 may be disposed in the pixel opening on the first electrode 361. The emission layer 362 may include a low molecular organic material or a polymeric organic material. The second electrode 363 may be disposed on the emission layer 362 and the pixel defining layer PDL. The first electrode 361 may include or be composed of a light-transmissive conductive material, and the second electrode 363 may include or be composed of a reflective conductive material.

[0134] The luminance of the light emitted from the emission layer 362 may be controlled by a current between the first electrode 361 and the second electrode 363. Based on the current between the first electrode 361 and the second electrode 363, the emission layer 362 may generate light and emit the light toward the substrate 310. The first electrode 361, the emission layer 362, and the second electrode 363 may form a display element DE.

[0135] The encapsulation layer 370 may be disposed on the second electrode 363. The encapsulation layer 370 may include or be composed of an insulating material. The encapsulation layer 370 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer.

[0136] In the illustrated exemplary embodiment, the bottom-emission type organic light-emitting display device 300 may include a conductive pattern 100 so that the reflectance of external light on the display surface of the bottom-emission type organic light-emitting display device 300 can be reduced. Accordingly, the visibility of the image displayed from the bottom-emission type organic light-emitting display device 300 can be improved.

[0137] Figure 12 A cross-sectional view for explaining an exemplary embodiment of a display device. Refer to Figure 12 The described display device may be a top-emission type organic light-emitting display device 400 including the above-described conductive pattern 100.

[0138] The description of the elements that are substantially the same or similar to those of the top-emission type organic light-emitting display device 400 described with reference to Figure 12 will not be repeated with respect to the top-emission type organic light-emitting display device 400 described with reference to Figure 11 the bottom-emission type organic light-emitting display device 300 described with reference to

[0139] Refer to Figure 12, the top-emitting organic light-emitting display device 400 may include a substrate 410, an active layer ACT, a gate insulating layer GIL, a first conductive layer, an insulating interlayer 430, a second conductive layer, a passivation layer 450, a first electrode 461, a pixel defining layer PDL, an emission layer 462, a second electrode 463, a packaging layer 470, a first sensing electrode 480, a first insulating layer ISL1, a second sensing electrode 490, and a second insulating layer ISL2. The first conductive layer may include a gate line 421 and a gate electrode 422 of a transistor TR. The second conductive layer may include a data line 441 and a source electrode 442 and a drain electrode 443 of the transistor TR. Each of the above-mentioned elements may have a single-layer structure or a multi-layer structure. Other elements may be further disposed between the above-mentioned elements.

[0140] The above-mentioned conductive pattern 100 may be applied to each of the first conductive layer and the second conductive layer. In other words, each of the first conductive layer and the second conductive layer may include a metal layer and a first low-reflection layer disposed on a first surface of the metal layer and including niobium carbide and zinc oxide. In an exemplary embodiment, the metal layer of the conductive pattern 100 may be disposed between the substrate 410 and the first low-reflection layer of the conductive pattern 100, as Figure 12 illustrated. In other words, the first low-reflection layer may be disposed on the upper surface of the metal layer. In this case, the reflection of external light incident on the front surface (e.g., the display surface) of the top-emitting organic light-emitting display device 400 and reflected by the conductive pattern 100 may be reduced or substantially prevented, so that the reflectance of external light on the front surface of the top-emitting organic light-emitting display device 400 may be reduced.

[0141] The pixel defining layer PDL may be disposed on the first electrode 461, and a pixel opening exposing at least a part of the first electrode 461 may be defined in the pixel defining layer PDL. The emission layer 462 may be disposed in the pixel opening on the first electrode 461, and the second electrode 463 may be disposed on the emission layer 462 and the pixel defining layer PDL. For example, the first electrode 461 may include or be composed of a reflective conductive material, and the second electrode 463 may include or be composed of a light-transmissive conductive material.

[0142] The first sensing electrode 480 may be disposed on the packaging layer 470. The first insulating layer ISL1 may be disposed on the first sensing electrode 480. In an exemplary embodiment, the first insulating layer ISL1 may include or be composed of the following: an inorganic insulating material, such as silicon nitride or silicon oxide, etc.

[0143] The second sensing electrode 490 may be disposed on the first insulating layer ISL1. The second insulating layer ISL2 may be disposed on the second sensing electrode 490. In an exemplary embodiment, the second insulating layer ISL2 may include or consist of the following: an inorganic insulating material such as silicon nitride or silicon oxide; and / or an organic insulating material such as polyimide.

[0144] In an exemplary embodiment, the first sensing electrode 480 and the second sensing electrode 490 may sense an input from a user, such as a finger or an external object of a user who contacts or is close to the display surface of the top-emitting organic light-emitting display device 400. For example, in an exemplary embodiment, the first sensing electrode 480 and the second sensing electrode 490 may sense an input from a user in a static capacitance manner. In an exemplary embodiment, one of the first sensing electrode 480 and the second sensing electrode 490 may be a sensing electrode that outputs a sensing signal corresponding to the input of the user to the sensing driver, and the other of the first sensing electrode 480 and the second sensing electrode 490 may be a driving electrode that receives a driving signal from the sensing driver.

[0145] The above-mentioned conductive pattern 100 may be applied to each of the first sensing electrode 480 and the second sensing electrode 490. In other words, each of the first sensing electrode 480 and the second sensing electrode 490 may include a metal layer and a first low-reflection layer disposed on a first surface of the metal layer and including niobium carbide and zinc oxide.

[0146] The conductive pattern according to the exemplary embodiment may be applied to wirings or electrodes of a display device included in a computer, a notebook, a mobile phone, a smart phone, a smart tablet, a portable media player (“PMP”), a personal digital assistant (“PD”), or an MP3 player, etc.

[0147] Although the conductive pattern, the display device, and the method of manufacturing the conductive pattern according to the exemplary embodiment have been described with reference to the figures, the illustrated exemplary embodiments are examples, and modifications and changes may be made by those of ordinary skill in the relevant technical field without departing from the technical spirit described in the appended claims.

Claims

1. A conductive pattern, the conductive pattern comprising: A metal layer; And A first low-reflection layer disposed on a first surface of the metal layer, the first low-reflection layer comprising niobium carbide and zinc oxide, Wherein the conductive pattern is for a display device.

2. The conductive pattern according to claim 1, wherein an amount of the zinc oxide included in the first low-reflection layer is less than or equal to 50 atomic percent.

3. The conductive pattern according to claim 1, wherein the first low-reflection layer further comprises a metal.

4. The conductive pattern according to claim 3, wherein the metal comprises aluminum.

5. The conductive pattern according to claim 3, wherein an amount of the metal included in the first low-reflection layer is less than or equal to 5 mass percent.

6. The conductive pattern according to claim 1, further comprising: A second low-reflection layer disposed on a second surface of the metal layer opposite to the first surface, the second low-reflection layer comprising niobium carbide and zinc oxide.

7. The conductive pattern according to claim 6, wherein an amount of the zinc oxide included in the second low-reflection layer is equal to an amount of the zinc oxide included in the first low-reflection layer.

8. The conductive pattern according to claim 1, wherein sidewalls of the first low-reflection layer contact sidewalls of the metal layer.

9. The conductive pattern according to claim 1, wherein a thickness of the first low-reflection layer is less than a thickness of the metal layer.

10. The conductive pattern according to claim 1, wherein the metal layer comprises at least one of copper, aluminum, titanium, and molybdenum.

11. A display device, the display device comprising: A substrate; A transistor disposed on the substrate; A display element disposed on the transistor; A packaging layer covering the display element; And A conductive pattern disposed between the substrate and the packaging layer or on the packaging layer, the conductive pattern comprising: A metal layer; And A first low-reflection layer disposed on a first surface of the metal layer, the first low-reflection layer comprising niobium carbide and zinc oxide.

12. The display device according to claim 11, wherein the metal layer is disposed between the substrate and the first low-reflection layer.

13. The display device according to claim 11, wherein the first low-reflection layer is disposed between the substrate and the metal layer.

14. The display device according to claim 11, wherein the conductive pattern further comprises a second low-reflection layer disposed on a second surface of the metal layer opposite to the first surface, the second low-reflection layer comprising niobium carbide and zinc oxide.

15. The display device according to claim 11, wherein the conductive pattern is disposed between the substrate and the packaging layer and is a gate line for transmitting a gate signal to the transistor or a data line for transmitting a data signal to the transistor.

16. The display device according to claim 11, wherein the conductive pattern is disposed on the packaging layer and is a sensing electrode for sensing an input from a user.

17. A method of manufacturing a conductive pattern, the method comprising: Forming a metal material layer; A first low-reflection material layer is formed on a first surface of the metal material layer, and the first low-reflection material layer includes niobium carbide and zinc oxide; and The metal material layer and the first low-reflection material layer are etched integrally by an etchant.

18. The method according to claim 17, wherein an amount of the zinc oxide included in the first low-reflection material layer is less than or equal to 50 atomic percent.

19. The method according to claim 17, wherein an etching rate of the metal material layer etched by the etchant is equal to an etching rate of the first low-reflection material layer etched by the etchant.

20. The method according to claim 17, further comprising: forming a second low-reflection material layer on a second surface of the metal material layer opposite to the first surface, the second low-reflection material layer including niobium carbide and zinc oxide, wherein the second low-reflection material layer, the metal material layer, and the first low-reflection material layer are etched integrally by the etchant.

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