Display device and method of manufacturing the same

Abstract

The present application relates to a display device and a method for manufacturing the display device. The display device includes: a substrate; a first electrode and a second electrode spaced apart from each other on the substrate; a first insulating pattern located on the substrate to cover at least a portion of each of the first electrode and the second electrode; a light-emitting element located between the first electrode and the second electrode on the first insulating pattern; a first contact electrode in contact with the first electrode and one end of the light-emitting element; a second contact electrode in contact with the second electrode and the other end of the light-emitting element; and a second insulating pattern located on the light-emitting element, and at least a portion of the second insulating pattern in contact with each of the first contact electrode and the second contact electrode, wherein the second insulating pattern includes a first upper surface that is not in contact with the first contact electrode or the second contact electrode.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0105691 filed on August 28, 2019, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] One or more aspects of embodiments of the present disclosure relate to a display device and a method for manufacturing the display device. For example, the present disclosure relates to a display device including a plurality of insulating patterns and a method for manufacturing the display device. Background Art

[0004] With the development of multimedia, display devices are becoming more and more important. In response to this development, various types of display devices are being used, such as organic light emitting diode (OLED) display devices, liquid crystal display (LCD) devices, etc.

[0005] An exemplary device for displaying an image of a display device includes a display panel, such as an OLED panel or an LCD panel. In the above panels, the light-emitting display panel may include a light-emitting element. For example, a light-emitting diode (LED) may include an OLED using (including) an organic material as a fluorescent material and / or an inorganic LED using (including) an inorganic material as a fluorescent material. Summary of the invention

[0006] One or more embodiments of the present disclosure provide a display device including a plurality of insulating patterns.

[0007] One or more embodiments of the present disclosure also provide a method of manufacturing a display device to form a plurality of contact electrodes using a lift-off process in the same process.

[0008] It should be noted that the objects and embodiments of the present disclosure are not limited to the objects and embodiments described above, and other objects and embodiments of the present disclosure should be apparent to those skilled in the art from the following description.

[0009] According to an exemplary embodiment of the present disclosure, a display device includes: a substrate; a first electrode and a second electrode, which are spaced apart from each other along a first direction on the substrate; a first insulating pattern, which is located on the substrate to cover at least a portion of each of the first electrode and the second electrode; a light-emitting element, which is located between the first electrode and the second electrode on the first insulating pattern; a first contact electrode, which is in contact with the first electrode and one end of the light-emitting element; a second contact electrode, which is in contact with the second electrode and the other end of the light-emitting element, and a second insulating pattern, which is located on the light-emitting element, and at least a portion of the second insulating pattern is in contact with the first contact electrode and the second contact electrode, wherein the second insulating pattern includes a first upper surface that is not in contact with the first contact electrode or the second contact electrode.

[0010] In an implementation, the light emitting element may extend in one direction, and a width of the second insulating pattern in the first direction may be smaller than a length of the light emitting element in the first direction.

[0011] In an implementation, a width of the second insulation pattern may be smaller than a width of the first insulation pattern in the first direction.

[0012] In an implementation, the second insulating pattern may further include a first lower surface in contact with the light emitting element and a second lower surface in contact with the first insulating pattern.

[0013] In an implementation, the display device may further include a third insulating pattern between the light emitting element and the first insulating pattern, wherein the light emitting element may make contact with the first insulating pattern and the third insulating pattern.

[0014] In an implementation, a width of the third insulation pattern in the first direction may be smaller than a width of the second insulation pattern in the first direction.

[0015] In an implementation, at least a portion of the second lower surface of the second insulation pattern may be in contact with the third insulation pattern.

[0016] In an embodiment, the second insulating pattern may include a first contact surface contacting the first contact electrode and a second contact surface contacting the second contact electrode, and the first contact surface may be located on a first side surface of the second insulating pattern, and the second contact surface may be located on a second side surface of the second insulating pattern.

[0017] In an embodiment, the first contact surface and the second contact surface may not be parallel to the first upper surface.

[0018] In an implementation, the first contact surface and the second contact surface may be perpendicular to the substrate.

[0019] In an embodiment, the first contact electrode may further include a second upper surface connected to the first contact surface, and the second contact electrode may further include a third upper surface connected to the second contact surface; and at least one selected from the second upper surface and the third upper surface may be coplanar with the first upper surface.

[0020] In an embodiment, at least one selected from the second upper surface and the third upper surface may be spaced apart from a reference surface defined by the first upper surface.

[0021] In an embodiment, the first contact electrode may be in contact with a side surface of one end portion of the light emitting element, and the second contact electrode may be in contact with a side surface of the other end portion of the light emitting element.

[0022] According to another embodiment of the present disclosure, a display device includes: a first electrode extending in a first direction; a second electrode extending in the first direction and spaced apart from the first electrode in a second direction intersecting the first direction; a light-emitting element located between the first electrode and the second electrode; a first contact electrode located on the first electrode and in contact with one end of the light-emitting element; a second contact electrode located on the second electrode and in contact with the other end of the light-emitting element; and an insulating pattern located on the light-emitting element between the first contact electrode and the second contact electrode, the insulating pattern including a first side surface and a second side surface facing the first side surface, wherein the insulating pattern extends in the first direction, the first side surface is in contact with the first contact electrode, and the second side surface is in contact with the second contact electrode.

[0023] In an implementation, a width of the insulating pattern in the second direction may be equal to a width of a region between the first contact electrode and the second contact electrode in the second direction.

[0024] In an implementation, the light emitting element may extend in the second direction, and a width of the insulating pattern may be smaller than a length of the light emitting element in the second direction.

[0025] According to another embodiment of the present disclosure, a method for manufacturing a display device includes: forming a first electrode and a second electrode on a substrate; forming a light-emitting element between the first electrode and the second electrode; forming an insulating layer on the light-emitting element; forming a stripping layer on the insulating layer, and patterning the insulating layer to form an insulating pattern on the light-emitting element; forming a metal layer on the first electrode, the second electrode and the stripping layer; removing the stripping layer; and forming a first contact electrode in contact with one side surface of the insulating pattern and a second contact electrode in contact with another side surface of the insulating pattern.

[0026] In an embodiment, the first contact electrode may be in contact with the first electrode and one end of the light emitting element, and the second contact electrode may be in contact with the second electrode and the other end of the light emitting element.

[0027] In an implementation, an upper surface of the insulation pattern may not be in contact with the first contact electrode or the second contact electrode.

[0028] In an embodiment, forming the lift-off layer may further include forming a hard mask layer between the insulating layer and the lift-off layer, and the insulating pattern may include a region where one side surface and the other side surface are exposed and not in contact with the first contact electrode or the second contact electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects and features of the present disclosure will become more apparent by describing in more detail exemplary embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0030] Figure 1 is a schematic plan view of a display device according to an embodiment;

[0031] Figure 2 is a schematic plan view of one pixel of a display device according to one embodiment;

[0032] Figure 3 It is shown Figure 2 A plan view of a sub-pixel of ;

[0033] Figure 4 Shown along Figure 3 A cross-sectional view taken along line Xa-Xa', line Xb-Xb' and line Xc-Xc';

[0034] Figure 5 It shows the intersection along the line Xb-Xb' Figure 4 a sectional view of a portion of a sectional view;

[0035] Figure 6 is along Figure 3 A cross-sectional view taken along the line Xd-Xd';

[0036] Figure 7 is a schematic diagram of a light emitting element according to one embodiment;

[0037] Figure 8 is a flowchart showing a method of manufacturing a display device according to one embodiment;

[0038] Figures 9 to 18 is a cross-sectional view showing a process of manufacturing a display device according to one embodiment;

[0039] Fig.19 is a cross-sectional view showing a portion of a display device according to another embodiment;

[0040] Figure 20 to Figure 23 It shows the manufacturing Fig.19 A cross-sectional view of a process of a display device;

[0041] Fig.24 is a cross-sectional view showing a portion of a display device according to still another embodiment;

[0042] Fig.25 is a cross-sectional view showing a portion of a display device according to still another embodiment;

[0043] Fig.26 is a plan view of one sub-pixel of a display device according to another embodiment;

[0044] Fig. 27 is a schematic diagram of a light emitting element according to another embodiment; and

[0045] Fig.28 It is shown that Fig. 27 A cross-sectional view of a portion of a display device of a light emitting element. DETAILED DESCRIPTION

[0046] The subject matter of the present disclosure will now be described more fully below with reference to the accompanying drawings, in which exemplary embodiments of the present disclosure are shown. However, the subject matter of the present disclosure may be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0047] It should also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. When an element is referred to as being "directly on" another element, there are no intervening elements. Throughout the specification, the same reference numerals refer to the same components.

[0048] It should be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the spirit and scope of the present disclosure, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0049] As used herein, expressions such as “at least one of,” “one of,” and “selected from,” when they follow a list of elements and “selected from,” when they precede a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

[0050] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0051] Additionally, when describing embodiments of the present disclosure, the use of “may” refers to “one or more embodiments of the present disclosure.”

[0052] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0053] Figure 1 is a schematic plan view of a display device according to an embodiment.

[0054] refer to Figure 1 , the display device 10 displays a moving image or a still image. The display device 10 may refer to any suitable electronic device that provides (includes) a display screen. For example, the display device 10 may include a television that provides (includes) a display screen, a laptop computer (laptop computer), a monitor, an advertising board, an Internet of Things device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic clock, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, a portable video camera, etc.

[0055] The display device 10 includes a display panel having a display screen. Non-limiting examples of the display panel may include a light emitting diode (LED) display panel, an organic light emitting display panel, a quantum dot light emitting display panel, a plasma display panel, a field emission display panel, etc. In the following, a case where an LED display panel is applied as an example of a display panel is shown, but the present disclosure is not limited thereto, and other suitable display panels may be applied as long as substantially the same technical spirit is applicable.

[0056] The shape of the display device 10 may be modified in various appropriate ways. For example, the display device 10 may have a rectangular shape with a long width (e.g., the width is greater than each of the length and the height), a rectangular shape with a long height (e.g., the height is greater than each of the length and the width), a square shape, a quadrilateral shape with rounded corners, other polygonal shapes, a circular shape, etc. The shape of the display area DA of the display device 10 may be substantially similar to the shape of the display device 10. Figure 1 In FIG. 1 , the display device 10 and the display area DA are shown, both of which are rectangular shapes having a long width.

[0057] The display device 10 may include a display area DA and a non-display area NDA. The display area DA is an area in which a screen (image) can be displayed, and the non-display area NDA is an area in which a screen (image) is not displayed. The display area DA may be referred to as an active area, and the non-display area NDA may be referred to as a non-active area.

[0058] The display area DA may occupy approximately the center of the display device 10. The display area DA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in a row direction and a column direction. In a plan view, the shape of each pixel PX may be a rectangular shape or a square shape, but the present disclosure is not limited thereto. Each pixel PX may have a rhombus shape with each side thereof tilted relative to one direction. Each pixel PX may include one or more light emitting elements 300 (see Figure 2 ), the light emitting element 300 can emit light within a specific (eg, set) wavelength range to display a specific (eg, set) color.

[0059] Figure 2 is a schematic plan view of one pixel of a display device according to one embodiment. Figure 3 It is shown Figure 2 A plan view of a sub-pixel of FIG.

[0060] refer to Figure 2 and Figure 3 , each of the plurality of pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit light having a first color, the second sub-pixel PX2 may emit light having a second color, and the third sub-pixel PX3 may emit light having a third color. The first color may be blue, the second color may be green, and the third color may be red, but the present disclosure is not limited thereto, and each sub-pixel PXn (see Fig.26 ) can emit light of the same color. In addition, although Figure 2 4 shows that each pixel PX includes three sub-pixels PXn, but the present disclosure is not limited thereto, and each pixel PX may include a greater number of sub-pixels PXn (eg, more than three sub-pixels PXn).

[0061] Each subpixel PXn of the display device 10 may include an area defined as a light emitting area EMA. The first subpixel PX1 may include a first light emitting area EMA1, the second subpixel PX2 may include a second light emitting area EMA2, and the third subpixel PX3 may include a third light emitting area EMA3. The light emitting area EMA may be defined as an area where the light emitting element 300 included in the display device 10 will emit light within a specific (e.g., set) wavelength range. The light emitting element 300 includes an active layer 330 (see Figure 4), and the active layer 330 may emit light within a specific (e.g., set) wavelength range without any specific orientation. For example, the light emitted from the active layer 330 of the light emitting element 300 may be emitted in the lateral direction of the light emitting element 300 and in the direction of both ends thereof. The light emitting area EMA of each sub-pixel PXn may include a region in which the light emitting element 300 exists. And the light emitting area EMA may also include a region to which the light from the light emitting element 300 is emitted. However, the present disclosure is not limited thereto, and the light emitting area EMA may also include a region in which the light emitted from the light emitting element 300 is reflected and / or refracted due to another member to be emitted. A plurality of light emitting elements 300 may be included in each sub-pixel PXn, and may together form a light emitting area EMA including a region in which the light emitting element 300 exists and a region adjacent to the region in which the light emitting element 300 exists.

[0062] In one or more embodiments, each sub-pixel PXn of the display device 10 may include a non-luminous region, which may be defined as a region of the sub-pixel PXn other than the luminous region EMA. The non-luminous region may be a region where the light emitting element 300 does not exist and where light emitted from the light emitting element 300 cannot reach, so that no light is emitted in the non-luminous region.

[0063] Each sub-pixel PXn of the display device 10 may include a plurality of electrodes 210 and 220, a light emitting element 300, a plurality of contact electrodes 260, Figure 4 The plurality of inner banks 410 and 420, the outer bank 430, and the one or more insulating layers 510, 520, and 550 (see Figure 4 ).

[0064] The plurality of electrodes 210 and 220 may be electrically connected to the light emitting element 300 and may receive a predetermined (or set) voltage to allow the light emitting element 300 to emit light within a specific (e.g., set) wavelength range. In addition, at least a portion of each of the electrodes 210 and 220 may be used to form an electric field in the sub-pixel PXn to align the light emitting element 300.

[0065] The plurality of electrodes 210 and 220 may include a first electrode 210 and a second electrode 220. In an exemplary embodiment, the first electrode 210 may be a pixel electrode that is separate with respect to each sub-pixel PXn, and the second electrode 220 may be a common electrode that is commonly connected along each sub-pixel PXn (e.g., commonly connected across all sub-pixels PXn in one pixel PX). One of the first electrode 210 and the second electrode 220 may be an anode electrode of the light emitting element 300, and the other of the first electrode 210 and the second electrode 220 may be a cathode electrode of the light emitting element 300. However, the present disclosure is not limited thereto.

[0066] The first and second electrodes 210 and 220 may respectively include electrode rods 210S and 220S extending in a first direction DR1 and one or more electrode branches 210B and 220B extending and branching from the electrode rods 210S and 220S in a second direction DR2 intersecting the first direction DR1 .

[0067] The first electrode 210 may include a first electrode rod 210S extending in the first direction DR1 and at least one first electrode branch 210B branched from the first electrode rod 210S to extend in the second direction DR2 .

[0068] Both ends of the first electrode bar 210S of any one pixel PX may be formed to be spaced apart from each other between sub-pixels PXn, and to be substantially collinear (e.g., substantially aligned) with the first electrode bar 210S of the sub-pixel PXn in the same row (e.g., adjacent thereto in the first direction DR1). Both ends of the first electrode bar 210S in each sub-pixel PXn may be spaced apart from each other so that different electrical signals may be applied to the first electrode branch 210B (if there is more than one), and the first electrode branches 210B may be driven individually.

[0069] In one or more embodiments, the first electrode branches 210B branch from at least a portion of the first electrode rods 210S and extend in the second direction DR2. The first electrode branches 210B may be spaced apart from the second electrode rods 220S facing the first electrode rods 210S.

[0070] The second electrode 220 may include a second electrode bar 220S and a second electrode branch 220B, the second electrode bar 220S extending in the first direction DR1 and spaced apart from the first electrode bar 210S in the second direction DR2 to face the first electrode bar 210S, and the second electrode branch 220B branching from the second electrode bar 220S and extending in the second direction DR2. One end of the second electrode bar 220S may be connected to the second electrode bar 220S of another sub-pixel PXn adjacent thereto in the first direction DR1. For example, unlike the first electrode bar 210S, the second electrode bar 220S may extend in the first direction DR1 to intersect each sub-pixel PXn. The second electrode bar 220S intersecting each sub-pixel PXn may be connected to the outside of the display area DA in which each pixel PX or each sub-pixel PXn is located, or connected to a portion extending from the non-display area NDA in one direction.

[0071] The second electrode branch 220B may be spaced apart from the first electrode branch 210B in the first direction DR1 and may face the first electrode branch 210B in the first direction DR1. The second electrode branch 220B may be spaced apart from the first electrode bar 210S in the second direction DR2. The second electrode branch 220B may be connected to the second electrode bar 220S, and an end portion of the second electrode branch 220B in its extension direction (e.g., in the second direction DR2) may be positioned in the sub-pixel PXn and may be spaced apart from the first electrode bar 210S.

[0072] The first electrode 210 and the second electrode 220 may each be electrically connected to the circuit element layer PAL (see FIG. 1 ) of the display device 10 through a contact hole (eg, a first electrode contact hole CNTD and a second electrode contact hole CNTS). Figure 4 ). In the drawings, the first electrode contact hole CNTD has been shown to be formed in the first electrode rod 210S of each sub-pixel PXn, and one second electrode contact hole CNTS has been shown to be formed in one second electrode rod 220S crossing each sub-pixel PXn (for example, one second electrode contact hole CNTS may be formed only in one pixel PX). However, the present disclosure is not limited thereto, and in some cases, the second electrode contact hole CNTS may be formed in each sub-pixel PXn.

[0073] In the drawings, two first electrode branches 210B have been shown as being on each sub-pixel PXn, and one second electrode branch 220B has been shown as being between the two first electrode branches 210B, but the present disclosure is not limited thereto. In addition, the first electrode 210 and the second electrode 220 do not necessarily have a shape extending in one direction, and may have various suitable structures. For example, the first electrode 210 and the second electrode 220 may have a partially curved or bent shape, and one of the first electrode 210 and the second electrode 220 may surround the other of the first electrode 210 and the second electrode 220. The structure or shape of the first electrode 210 and the second electrode 220 may not be particularly limited, as long as at least some regions of the first electrode 210 and the second electrode 220 are spaced apart from each other and face each other to form a space in which the light-emitting element 300 will be placed between the at least some regions of the first electrode 210 and the second electrode 220.

[0074] In addition, in some embodiments, the electrode rods 210S and 220S may be omitted from the first electrode 210 and the second electrode 220, respectively. The first electrode 210 and the second electrode 220 may have a shape extending in only one direction and may be spaced apart from each other in each sub-pixel PXn. This will be described herein with reference to another embodiment.

[0075] The plurality of banks 410, 420, and 430 may include an outer bank 430 located at a boundary between sub-pixels PXn and a plurality of inner banks 410 and 420 located adjacent to a center of each sub-pixel PXn under the electrodes 210 and 220. In one or more embodiments, the first inner bank 410 and the second inner bank 420 may be located under the first electrode branch 210B and the second electrode branch 220B, respectively.

[0076] The outer bank 430 may be located at the boundary between the sub-pixels PXn. The ends of the plurality of first electrode rods 210S may be formed to be spaced apart from each other based on the outer bank 430. The outer bank 430 may extend in the second direction DR2 and may be positioned at the boundary between every two adjacent sub-pixels PXn along the first direction DR1. However, the present disclosure is not limited thereto, and the outer bank 430 may extend in the first direction DR1 and may be positioned at the boundary between every two adjacent sub-pixels PXn along the second direction DR2. The outer bank 430 may include the same material as each of the inner bank 410 and 420, and may be formed simultaneously (or in parallel) with the inner bank 410 and 420 in a single process.

[0077] The light emitting element 300 may be located between the first electrode 210 and the second electrode 220. One end of the light emitting element 300 may be electrically connected to the first electrode 210, and the other end of the light emitting element 300 may be electrically connected to the second electrode 220. The light emitting element 300 may be electrically connected to the first electrode 210 and the second electrode 220 through the contact electrode 260, which will be described below.

[0078] A plurality of light emitting elements 300 may be spaced apart from each other and arranged substantially in parallel. The spacing distance between the light emitting elements 300 is not particularly limited. In some cases, a plurality of light emitting elements 300 may be adjacent to each other to form a group, and a plurality of other light emitting elements 300 may be grouped in a state spaced apart at regular intervals and may have an uneven density, but may be oriented in one direction to be arranged. In addition, in an embodiment, the light emitting element 300 may have a shape extending in one direction, and the extension direction of each electrode (e.g., each of the first electrode branch 210B and the second electrode branch 220B) may be substantially perpendicular to the extension direction of the light emitting element 300 (e.g., may intersect with the extension direction of the light emitting element 300). However, the present disclosure is not limited thereto, and the light emitting element 300 may be positioned obliquely without being perpendicular to the extension direction of the first electrode branch 210B and the second electrode branch 220B.

[0079] The light emitting element 300 according to one embodiment may include an active layer 330 having different materials to emit light in different wavelength ranges to the outside. The display device 10 according to one embodiment may include a light emitting element 300 for emitting light in different wavelength ranges. The display device 10 may include a light emitting element 300 in each sub-pixel PXn; the light emitting element 300 may have the same structure and may include an active layer 330 for emitting light in different wavelength ranges. The light emitting element 300 of the first sub-pixel PX1 may include an active layer 330 emitting first light L1 having a first wavelength in the central wavelength range, the light emitting element 300 of the second sub-pixel PX2 may include an active layer 330 emitting second light L2 having a second wavelength in the central wavelength range, and the light emitting element 300 of the third sub-pixel PX3 may include an active layer 330 emitting third light L3 having a third wavelength in the central wavelength range.

[0080] Thus, the first light L1 may be emitted from the first subpixel PX1, the second light L2 may be emitted from the second subpixel PX2, and the third light L3 may be emitted from the third subpixel PX3. In some embodiments, the first light L1 may be blue light within a central wavelength range of 450 nm to 495 nm, the second light L2 may be green light within a central wavelength range of 495 nm to 570 nm, and the third light L3 may be red light within a central wavelength range of 620 nm to 752 nm.

[0081] However, the present disclosure is not limited thereto. The first light L1, the second light L2, and the third light L3 may have a color different from the colors described above, or may have the same color, but the central wavelength range may be different from the range described above. In addition, in some cases, the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may include the same type (or kind) of light emitting element 300 to emit light having substantially the same color.

[0082] In one or more embodiments, the display device 10 may include a first insulating layer 510 (see FIG. 5 ) covering at least a portion of the first electrode 210 and the second electrode 220. Figure 4 ).

[0083] The first insulating layer 510 may be located in each sub-pixel PXn of the display device 10. The first insulating layer 510 may substantially cover the entirety of each sub-pixel PXn, and may even extend to other adjacent sub-pixels PXn. The first insulating layer 510 may cover at least a portion of the first electrode 210 and the second electrode 220. In some embodiments, the first insulating layer 510 may expose portions of the first electrode 210 and the second electrode 220, such as portions of the first electrode branch 210B and the second electrode branch 220B.

[0084] The plurality of contact electrodes 260 may have a shape extending in one direction. Each of the plurality of contact electrodes 260 may contact the light emitting element 300 and the electrodes 210 and 220 , and the light emitting element 300 may receive an electrical signal from the first electrode 210 and the second electrode 220 through the contact electrode 260 .

[0085] The contact electrode 260 may include a first contact electrode 261 and a second contact electrode 262. The first contact electrode 261 and the second contact electrode 262 may be located on the first electrode branch 210B and the second electrode branch 220B, respectively.

[0086] The first contact electrode 261 may be located on the first electrode 210 or the first electrode branch 210B, extend in the second direction DR2, and may contact one end of the light emitting element 300. The second contact electrode 262 may be located on the second electrode 220 or the second electrode branch 220B, extend in the second direction DR2, and may contact the other end of the light emitting element 300. As described below, the first contact electrode 261 and the second contact electrode 262 may contact the first electrode 210 and the second electrode 220 exposed through the opening of the first insulating layer 510. The light emitting element 300 may be electrically connected to the first electrode 210 and the second electrode 220 through the first contact electrode 261 and the second contact electrode 262.

[0087] In some embodiments, the first contact electrode 261 and the second contact electrode 262 may each have a width measured in one direction that is greater than the width of each of the first electrode 210 and the second electrode 220 (or the first electrode branch 210B and the second electrode branch 220B) measured in one direction. The first contact electrode 261 and the second contact electrode 262 may cover the side portions of the first electrode 210 and the second electrode 220 (or the first electrode branch 210B and the second electrode branch 220B), respectively. However, the present disclosure is not limited thereto, and in some cases, the first contact electrode 261 and the second contact electrode 262 may cover only one side portion of the first electrode branch 210B and the second electrode branch 220B, respectively.

[0088] Although two first contact electrodes 261 and one second contact electrode 262 are shown in one sub-pixel PXn in the drawings, the present disclosure is not limited thereto. The number of first contact electrodes 261 and second contact electrodes 262 may vary according to the number of first electrodes 210 and second electrodes 220 included in each sub-pixel PXn or the number of first electrode branches 210B and second electrode branches 220B.

[0089] In one or more embodiments, a second insulating layer 520 is positioned on the outer surface of the light emitting element 300 (see Figure 4 ). The second insulating layer 520 may be formed to partially surround the outer surface of the light emitting element 300 , and may be used to protect and simultaneously (or in parallel) fix (attach) the light emitting element 300 .

[0090] The display device 10 according to one embodiment may include a plurality of insulating patterns 510P, 521, and 522. In addition to the first insulating layer 510 and the second insulating layer 520, the display device 10 may include more insulating layers. Among the insulating layers, the first insulating layer 510 may include a first insulating pattern 510P located between the first electrode 210 and the second electrode 220 (see Figure 4), and the second insulating layer 520 may include a second insulating pattern 521 located on the light emitting element 300. Figure 2 and Figure 3 Only the second insulating pattern 521 of the second insulating layer 520 is shown in FIG. 5 , but the present disclosure is not limited thereto.

[0091] The second insulating pattern 521 may extend in the second direction DR2 between the first electrode 210 and the second electrode 220. At least a portion of the second insulating pattern 521 may be located on the light emitting element 300, and another portion thereof may be located on the through hole layer 200 (see Figure 4 ) on. In addition, the second insulating pattern 521 may be located between the first contact electrode 261 and the second contact electrode 262. In the manufacturing method of the display device 10, the process of forming the contact electrodes 261 and 262 may be performed by a lift-off process. Due to the lift-off process, the contact electrodes 261 and 262 may not be positioned on the second insulating layer 520, for example, not positioned on the upper surface of the second insulating pattern 521, and the second insulating pattern 521 may include a contact surface in contact with the contact electrodes 261 and 262. According to one embodiment, the contact surface of the second insulating pattern 521 in contact with the contact electrodes 261 and 262 may not be parallel to the upper surface of the second insulating pattern 521. This will be described in more detail below with reference to other drawings.

[0092] In addition to the first insulating layer 510, the display device 10 may include a circuit element layer PAL located below each of the electrodes 210 and 220, a second insulating layer 520 covering at least a portion of each of the electrodes 210 and 220 and the light emitting element 300, and a passivation layer 550 (see Figure 4 ). In the following, reference will be made to Figure 4 The structure of the display device 10 is described in more detail.

[0093] Figure 4 Shown along Figure 3 Cross-sectional views taken along line Xa-Xa', line Xb-Xb' and line Xc-Xc'.

[0094] Figure 4 A cross-sectional view of the first sub-pixel PX1 is shown, but Figure 4 The same may be applied to another pixel PX or sub-pixel PXn. Figure 4 A cross-sectional view from one end to the other end of the light emitting element 300 in the first sub-pixel PX1 is shown.

[0095] Combination Figure 2 and Figure 3 refer to Figure 4, the display device 10 may include a circuit element layer PAL and a light emitting layer EML. The circuit element layer PAL may include a substrate 110, a buffer layer 115, a light blocking layer BML, and a first transistor 120 and a second transistor 140; and the light emitting layer EML may include a plurality of electrodes 210 and 220 positioned on the first transistor 120 and the second transistor 140, a light emitting element 300, and a plurality of insulating layers 510, 520, and 550.

[0096] The substrate 110 may be an insulating substrate. The substrate 110 may be made of an insulating material such as glass, quartz, polymer resin, etc. The substrate 110 may be a rigid substrate or a flexible substrate that is bendable, foldable, rollable, etc.

[0097] The light blocking layer BML may be located on the substrate 110. The light blocking layer BML may include a first light blocking layer BML1 and a second light blocking layer BML2. The first light blocking layer BML1 may be electrically connected to a first drain electrode 123 of a first transistor 120 to be described below. The second light blocking layer BML2 may be electrically connected to a second drain electrode 143 of a second transistor 140.

[0098] The first light blocking layer BML1 and the second light blocking layer BML2 are positioned to overlap with the first active material layer 126 of the first transistor 120 and the second active material layer 146 of the second transistor 140, respectively. The first light blocking layer BML1 and the second light blocking layer BML2 may include a light blocking material to prevent (or reduce) light from being incident on the first active material layer 126 and the second active material layer 146. For example, the first light blocking layer BML1 and the second light blocking layer BML2 may be formed of an opaque metal material that blocks (or reduces) light transmission. However, the present disclosure is not limited thereto, and in some cases, the light blocking layer BML may be omitted.

[0099] The buffer layer 115 may be located on the light blocking layer BML and the substrate 110. The buffer layer 115 may cover the entire substrate 110 on which the light blocking layer BML is disposed. The buffer layer 115 may prevent (or reduce) diffusion of impurity ions and penetration of water and / or outdoor air, and may perform a surface planarization function. In addition, the buffer layer 115 may insulate the light blocking layer BML from the first active material layer 126 and the second active material layer 146.

[0100] The semiconductor layer may be located on the buffer layer 115. The semiconductor layer may include a first active material layer 126 of the first transistor 120, a second active material layer 146 of the second transistor 140, and an auxiliary layer 163. The semiconductor layer may include polysilicon, single crystal silicon, oxide semiconductor, or the like.

[0101] The first active material layer 126 may include a first doping region 126a, a second doping region 126b, and a first channel region 126c. The first channel region 126c may be located between the first doping region 126a and the second doping region 126b. The second active material layer 146 may include a third doping region 146a, a fourth doping region 146b, and a second channel region 146c. The second channel region 146c may be located between the third doping region 146a and the fourth doping region 146b. The first active material layer 126 and the second active material layer 146 may each independently include polycrystalline silicon. Polycrystalline silicon may be formed by crystallizing amorphous silicon. Examples of crystallization methods may include a rapid thermal annealing (RTA) method, a solid phase crystallization (SPC) method, an excimer laser annealing (ELA) method, a metal induced crystallization (MILC) method, a sequential lateral solidification (SLS) method, etc., but the present disclosure is not limited thereto. In some embodiments, the first active material layer 126 and the second active material layer 146 may include single crystal silicon, low temperature polysilicon, amorphous silicon, etc. The first doping region 126a, the second doping region 126b, the third doping region 146a, and the fourth doping region 146b may be regions of the first active material layer 126 and the second active material layer 146 doped with impurities. However, the present disclosure is not limited thereto.

[0102] The first active material layer 126 and the second active material layer 146 are not necessarily limited to the above description. In an embodiment, the first active material layer 126 and the second active material layer 146 may each independently include an oxide semiconductor. In this case, the first doping region 126a and the third doping region 146a may be a first conductor region (e.g., a region having conductivity or a region in which conductivity has been increased), and the second doping region 126b and the fourth doping region 146b may be a second conductor region. When the first active material layer 126 and the second active material layer 146 include an oxide semiconductor, the oxide semiconductor may be an oxide semiconductor containing indium (In). In some embodiments, the oxide semiconductor may include indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium tin oxide (IGTO), indium gallium zinc tin oxide (IGZTO), etc. However, the present disclosure is not limited thereto.

[0103] The first gate insulating layer 150 may be located on the semiconductor layer. The first gate insulating layer 150 may cover the entire buffer layer 115 on which the semiconductor layer is disposed. The first gate insulating layer 150 may serve as a gate insulating layer of the first transistor 120 and the second transistor 140.

[0104] The first conductive layer may be located on the first gate insulating layer 150. On the first gate insulating layer 150, the first conductive layer may include a first gate electrode 121 located on the first active material layer 126 of the first transistor 120, a second gate electrode 141 located on the second active material layer 146 of the second transistor 140, and a power line 161 located on the auxiliary layer 163. The first gate electrode 121 may overlap with the first channel region 126c of the first active material layer 126, and the second gate electrode 141 may overlap with the second channel region 146c of the second active material layer 146.

[0105] The interlayer insulating layer 170 may be located on the first conductive layer. The interlayer insulating layer 170 may serve as an insulating layer between the first conductive layer and other layers above the first conductive layer. The interlayer insulating layer 170 may include an organic insulating material and may perform a surface planarization function.

[0106] The second conductive layer may be located on the interlayer insulating layer 170 . The second conductive layer includes the first drain electrode 123 and the first source electrode 124 of the first transistor 120 , the second drain electrode 143 and the second source electrode 144 of the second transistor 140 , and the power electrode 162 located on the power line 161 .

[0107] The first drain electrode 123 and the first source electrode 124 may respectively contact the first doping region 126a and the second doping region 126b of the first active material layer 126 through contact holes passing through the interlayer insulating layer 170 and the first gate insulating layer 150. The second drain electrode 143 and the second source electrode 144 may respectively contact the third doping region 146a and the fourth doping region 146b of the second active material layer 146 through contact holes passing through the interlayer insulating layer 170 and the first gate insulating layer 150. In addition, the first drain electrode 123 and the second drain electrode 143 may be electrically connected to the first light blocking layer BML1 and the second light blocking layer BML2 through other contact holes.

[0108] The via layer 200 may be located on the second conductive layer. The via layer 200 may include an organic insulating material and may perform a surface planarization function.

[0109] A plurality of banks 410 , 420 , and 430 , a plurality of electrodes 210 and 220 , and a light emitting element 300 may be located on the via layer 200 .

[0110] The plurality of banks 410 , 420 , and 430 may include inner banks 410 and 420 spaced apart from each other in each sub-pixel PXn and an outer bank 430 located at a boundary of the sub-pixel PXn adjacent thereto.

[0111] As described above, the outer bank 430 may extend in the first direction DR1 or the second direction DR2 and may be positioned at a boundary between every two adjacent sub-pixels PXn. For example, the outer bank 430 may divide (define) a boundary of each sub-pixel PXn.

[0112] During the manufacture of the display device 10, when the ink in which the light emitting elements 300 are distributed is injected using an inkjet printing device, the outer bank 430 may perform a function of preventing (or reducing) the ink from crossing the boundary of the sub-pixel PXn. The outer bank 430 may separate the inks in which different light emitting elements 300 are distributed in different sub-pixels PXn from each other to prevent (or reduce) the inks from mixing with each other. However, the present disclosure is not limited thereto.

[0113] The plurality of inner banks 410 and 420 may include a first inner bank 410 and a second inner bank 420 positioned adjacent to the center of each sub-pixel PXn.

[0114] The first inner bank 410 and the second inner bank 420 may be spaced apart from each other and may face each other. The first electrode 210 may be located on the first inner bank 410, and the second electrode 220 may be located on the second inner bank 420. Figure 3 and Figure 4 It can be understood that the first electrode branch 210B is located on the first inner bank 410 , and the second electrode branch 220B is located on the second inner bank 420 .

[0115] The first inner bank 410 and the second inner bank 420 may extend in the second direction DR2 in each sub-pixel PXn. Since the first inner bank 410 and the second inner bank 420 extend in the second direction DR2, the first inner bank 410 and the second inner bank 420 may extend toward the sub-pixel PXn adjacent thereto in the second direction DR2. However, the present disclosure is not limited thereto, and the first inner bank 410 and the second inner bank 420 may be positioned in each sub-pixel PXn to form a pattern. The plurality of banks 410, 420, and 430 may each independently include polyimide (PI), but the present disclosure is not limited thereto.

[0116] The first inner bank 410 and the second inner bank 420 may have a structure in which at least a portion of the first inner bank 410 and the second inner bank 420 partially protrudes relative to the through-hole layer 200. The first inner bank 410 and the second inner bank 420 may protrude upward from the surface on which the light-emitting element 300 is positioned, and at least a portion of the protruding portion may have an inclination. The protruding shape of the first inner bank 410 and the second inner bank 420 is not particularly limited. Because the inner banks 410 and 420 have an inclined side surface protruding from the through-hole layer 200, the light emitted from the light-emitting element 300 can be reflected from the inclined side surfaces of the inner banks 410 and 420. As described below, when the electrodes 210 and 220 on the inner banks 410 and 420 include a material having a high reflectivity, the light emitted from the light-emitting element 300 can be reflected from the electrodes 210 and 220 located on the inclined side surfaces of the inner banks 410 and 420 to travel in the upward direction of the through-hole layer 200.

[0117] In one or more embodiments, the outer bank 430 may divide adjacent sub-pixels PXn and simultaneously (or in parallel) may perform a function of preventing (or reducing) ink from overflowing to adjacent sub-pixels PXn in an inkjet process; however, the inner banks 410 and 420 may have a protruding structure in each sub-pixel PXn to serve as a reflective partition wall that reflects light emitted from the light emitting element 300 in an upward direction of the through-hole layer 200. However, the present disclosure is not limited thereto.

[0118] A plurality of electrodes 210 and 220 may be located on the through-hole layer 200 and the inner banks 410 and 420. The electrodes 210 and 220 may include electrode rods 210S and 220S and electrode branches 210B and 220B, respectively. Figure 3 In FIG. 1 , the line Xa-Xa′ is a line intersecting the first electrode rod 210S, the line Xb-Xb′ is a line intersecting the first electrode branch 210B and the second electrode branch 220B, and the line Xc-Xc′ is a line intersecting the second electrode rod 220S. Figure 4 , the first electrode 210 in the region Xa-Xa' is a first electrode rod 210S, the first electrode 210 and the second electrode 220 in the region Xb-Xb' are respectively a first electrode branch 210B and a second electrode branch 220B, and the second electrode 220 in the region Xc-Xc' is a second electrode rod 220S.

[0119] Some regions of the first electrode 210 and the second electrode 220 may be located on the via layer 200, and some regions of the first electrode 210 and the second electrode 220 may be located on the first inner bank 410 and the second inner bank 420. For example, the widths of the first electrode 210 and the second electrode 220 measured in the first direction DR1 may each be greater than the widths of the inner banks 410 and 420 measured in the first direction DR1. Some portions of the lower surfaces of the first electrode 210 and the second electrode 220 may be in contact with the via layer 200, and some other portions of the lower surfaces of the first electrode 210 and the second electrode 220 may be in contact with the inner banks 410 and 420.

[0120] In addition, the first electrode rod 210S and the second electrode rod 220S may extend in the first direction DR1, and the first inner bank 410 and the second inner bank 420 may extend in the second direction DR2, so that the first electrode rod 210S, the second electrode rod 220S, the first inner bank 410 and the second inner bank 420 may intersect the boundary of the sub-pixel PXn. The first electrode rod 210S and the second electrode rod 220S may partially overlap with the first inner bank 410 and the second inner bank 420. However, the present disclosure is not limited thereto, and as shown in the figure, the first electrode rod 210S and the second electrode rod 220S may not overlap with the first inner bank 410 and the second inner bank 420.

[0121] The first electrode contact hole CNTD may be formed in the first electrode rod 210S by passing through the via layer 200 to partially expose the first drain electrode 123 of the first transistor 120. The first electrode 210 may contact the first drain electrode 123 through the first electrode contact hole CNTD. The first electrode 210 may be electrically connected to the first drain electrode 123 of the first transistor 120 to receive a predetermined (or set) electrical signal therefrom.

[0122] The second electrode contact hole CNTS may be formed in the second electrode rod 220S by passing through the via layer 200 to partially expose the power electrode 162. The second electrode 220 may contact the power electrode 162 through the second electrode contact hole CNTS. The second electrode 220 may be electrically connected to the power electrode 162 to receive a predetermined (or set) electrical signal therefrom.

[0123] Some regions of the first electrode 210 and the second electrode 220 (e.g., the first electrode branch 210B and the second electrode branch 220B) may be respectively located on the first inner bank 410 and the second inner bank 420. The first electrode branch 210B may cover the first inner bank 410, and the second electrode branch 220B may cover the second inner bank 420. The first electrode branch 210B and the second electrode branch 220B may be spaced apart from each other, and a plurality of light emitting elements 300 may be located between the first electrode branch 210B and the second electrode branch 220B.

[0124] Each of the electrodes 210 and 220 may include a transparent conductive material. For example, each of the electrodes 210 and 220 may include a material such as ITO, IZO, indium tin zinc oxide (ITZO), etc., but the present disclosure is not limited thereto. In some embodiments, each of the electrodes 210 and 220 may include a conductive material having a high reflectivity. For example, each of the electrodes 210 and 220 may include a metal such as silver (Ag), copper (Cu), aluminum (Al), etc. as a material having a high reflectivity. In this case, light incident on each of the electrodes 210 and 220 may be reflected and emitted in an upward direction of each sub-pixel PXn.

[0125] In addition, each of the electrodes 210 and 220 may be formed into a structure in which one or more layers of a transparent conductive material and a metal layer having high reflectivity are stacked, or may be formed of a single layer including a transparent conductive material and a metal layer. In an embodiment, each of the electrodes 210 and 220 may have a stacked structure of ITO / Ag / ITO / IZO, or may be an alloy containing Al, nickel (Ni), lanthanum (La), etc. However, the present disclosure is not limited thereto.

[0126] The first insulating layer 510 may be located on the via layer 200, the first electrode 210, and the second electrode 220. The first insulating layer 510 partially covers the first electrode 210 and the second electrode 220. The first insulating layer 510 may have openings OP1 and OP2 formed therein (see Fig.11 ), and some portions of the first electrode 210 and the second electrode 220 may be exposed through the openings OP1 and OP2. The openings OP1 and OP2 of the first insulating layer 510 may be positioned to expose relatively flat upper surfaces of the first electrode 210 and the second electrode 220.

[0127] In an embodiment, between the first electrode 210 and the second electrode 220, a step may be formed in the first insulating layer 510 so that the upper surface of the first insulating layer 510 is recessed. In some embodiments, the first insulating layer 510 may include an inorganic insulating material, and a portion of the upper surface of the first insulating layer 510 covering the first electrode 210 and the second electrode 220 may be recessed due to a step of a member positioned below the first insulating layer 510. The light emitting element 300 on the first insulating layer 510 between the first electrode 210 and the second electrode 220 may be formed in an empty space between the recessed upper surfaces of the first insulating layer 510. The light emitting element 300 may be partially spaced apart from the upper surface of the first insulating layer 510, and the empty space may be filled with a material for forming the second insulating layer 520, which will be described in more detail below.

[0128] However, the present disclosure is not limited thereto. The first insulating layer 510 may form a substantially flat upper surface to allow the light emitting element 300 to be positioned thereon. The substantially flat upper surface may be formed to extend toward the first electrode 210 and the second electrode 220 in one direction to the inclined side surfaces of the first electrode 210 and the second electrode 220. For example, the first insulating layer 510 may be located in an area where the electrodes 210 and 220 overlap with the inclined side surfaces of the first inner bank 410 and the second inner bank 420. The contact electrode 260 may contact the exposed areas of the first electrode 210 and the second electrode 220, and may contact the end of the light emitting element 300 on the substantially flat upper surface of the first insulating layer 510.

[0129] The first insulating layer 510 may protect the first electrode 210 and the second electrode 220, and simultaneously (or in parallel) may insulate the first electrode 210 from the second electrode 220. In addition, the light emitting element 300 on the first insulating layer 510 may be prevented (or protected from) being damaged due to direct contact with other members. However, the shape and structure of the first insulating layer 510 are not limited thereto.

[0130] The light emitting element 300 may be located on the first insulating layer 510 between the electrodes 210 and 220. At least one light emitting element 300 may be located on the first insulating layer 510. However, the present disclosure is not limited thereto, and in some embodiments, at least some of the light emitting elements 300 in each sub-pixel PXn may be located in an area outside the area between the electrode branches 210B and 220B. For example, in some embodiments, at least some of the light emitting elements 300 in each sub-pixel PXn are not located in the area between the electrode branches 210B and 220B. In addition, the light emitting element 300 may be positioned in an area overlapping with the electrodes 210 and 220. The light emitting element 300 may be located on the ends of the first electrode branch 210B and the second electrode branch 220B that face each other.

[0131] The light emitting element 300 may include a plurality of layers arranged in a direction parallel to the through hole layer 200 (e.g., along the extension direction of the through hole layer 200). The light emitting element 300 of the display device 10 according to one embodiment may have a shape extending in one direction, and have a structure in which a plurality of semiconductor layers are sequentially positioned in one direction. As described in more detail below, in the light emitting element 300, the first semiconductor layer 310, the active layer 330, the second semiconductor layer 320, and the electrode layer 370 may be sequentially positioned in one direction, and the insulating layer 380 may surround the outer surface of the first semiconductor layer 310, the active layer 330, the second semiconductor layer 320, and the electrode layer 370. The light emitting element 300 in the display device 10 may be positioned so that one direction in which it extends is parallel to the through hole layer 200 (e.g., parallel to the extension direction of the through hole layer 200), and the plurality of semiconductor layers included in the light emitting element 300 may be sequentially arranged in a direction parallel to the upper surface of the through hole layer 200. However, the present disclosure is not limited thereto. In some cases, when the light emitting element 300 has another structure, a plurality of semiconductor layers may be arranged in a direction crossing (eg, perpendicular to) the via layer 200 .

[0132] In addition, according to one embodiment, since the insulating layer 380 is not formed on the end surface of the light emitting element 300 in one direction, and the end surface of the light emitting element 300 is exposed, the exposed end surface can be in contact with the first contact electrode 261 and the second contact electrode 262, which will be described in more detail below. However, the present disclosure is not limited to this. For example, at least a portion of the insulating layer 380 of the light emitting element 300 can be removed, and thus the side surfaces of both ends of the light emitting element 300 can be partially exposed due to the removal of the insulating layer 380. During the process of manufacturing the display device 10, when the second insulating layer 520 covering the outer surface of the light emitting element 300 is formed, the insulating layer 380 can be partially removed. The exposed side surface of the light emitting element 300 can be in contact with the first contact electrode 261 and the second contact electrode 262. However, the present disclosure is not limited to this.

[0133] The second insulating layer 520 may be located between the first electrode 210 and the second electrode 220. The second insulating layer 520 may partially surround the outer surface of the light emitting element 300. During the process of manufacturing the display device 10, the second insulating layer 520 may protect the light emitting element 300, and simultaneously (or in parallel) may perform the function of fixing (attaching) the light emitting element 300. In addition, in an embodiment, a portion of the material of the second insulating layer 520 may be located between the lower surface of the light emitting element 300 and the first insulating layer 510. The second insulating layer 520 may be formed to fill the space between the first insulating layer 510 and the light emitting element 300 formed during the process of manufacturing the display device 10. However, the present disclosure is not limited thereto.

[0134] The display device 10 may include a plurality of insulating patterns. In an embodiment, the first insulating layer 510 may include a first insulating pattern 510P located between the first electrode 210 and the second electrode 220, and the second insulating layer 520 may include a second insulating pattern 521 located on the light emitting element 300 and a third insulating pattern 522 located between the light emitting element 300 and the first insulating pattern 510P. The first insulating pattern 510P may be located between the openings OP1 and OP2 of the first insulating layer 510, and may be located in a region where the light emitting element 300 is positioned between the first electrode 210 and the second electrode 220. The second insulating pattern 521 of the second insulating layer 520 may be a portion surrounding the outer surface of the light emitting element 300, and the third insulating pattern 522 of the second insulating layer 520 may be located on a partially recessed portion of the first insulating pattern 510P to fill a space formed between the light emitting element 300 and the first insulating pattern 510P.

[0135] Since the first insulating pattern 510P, the second insulating pattern 521, and the third insulating pattern 522 are located between the first electrode 210 and the second electrode 220, each of the first insulating pattern 510P, the second insulating pattern 521, and the third insulating pattern 522 may extend in the second direction DR2. The plurality of insulating patterns 510P, 521, and 522 may contact the light emitting element 300, the electrodes 210 and 220, and the contact electrodes 261 and 262 to form a plurality of contact surfaces. The insulating patterns will be described in more detail below with reference to other drawings.

[0136] The first contact electrode 261 and the second contact electrode 262 are respectively located on the electrodes 210 and 220. The second insulating layer 520 may be located between the first contact electrode 261 and the second contact electrode 262, and may insulate the first contact electrode 261 from the second contact electrode 262 to prevent (or protect from) the first contact electrode 261 and the second contact electrode 262 from directly contacting each other.

[0137] The first contact electrode 261 and the second contact electrode 262 may make contact with at least one end of the light emitting element 300 and may be electrically connected to the first electrode 210 or the second electrode 220 to receive an electrical signal.

[0138] The first contact electrode 261 may contact an exposed region of the first electrode 210 on the first inner bank 410, and the second contact electrode 262 may contact an exposed region of the second electrode 220 on the second inner bank 420. The first contact electrode 261 and the second contact electrode 262 may transmit electrical signals, which are transmitted from the electrodes 210 and 220 to the light emitting element 300.

[0139] The contact electrode 260 may include a conductive material. For example, the contact electrode 260 may include ITO, IZO, ITZO, Al, etc. However, the present disclosure is not limited thereto.

[0140] The passivation layer 550 may be located on the contact electrode 260 and the second insulating layer 520. The passivation layer 550 may serve to protect components on the via layer 200 from an external environment.

[0141] Each of the first insulating layer 510, the second insulating layer 520, and the passivation layer 550 described above may include an inorganic insulating material and / or an organic insulating material. In an embodiment, the first insulating layer 510, the second insulating layer 520, and the passivation layer 550 may each independently include an inorganic insulating material, such as silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), etc. In addition, the first insulating layer 510, the second insulating layer 520, and the passivation layer 550 may each independently include acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene, cardo resin, siloxane resin, silsesquioxane resin, polymethyl methacrylate, polycarbonate, polymethyl methacrylate-polycarbonate synthetic resin, etc. as an organic insulating material. However, the present disclosure is not limited thereto.

[0142] Figure 5 is shown along Figure 3 A sectional view of a portion of the sectional view taken along the line Xb-Xb'. Figure 6 is along Figure 3 A cross-sectional view taken along line Xd-Xd'.

[0143] Figure 5is a cross section across both ends (eg, from one end to the other end) of the light emitting element 300 between the first electrode 210 and the second electrode 220, and Figure 6 is a cross section across a region in which the light emitting element 300 is not positioned between the first electrode 210 and the second electrode 220 .

[0144] refer to Figure 5 and Figure 6 , the display device 10 may include a plurality of insulating layers 510, 520, and 550, and some of the insulating layers 510, 520, and 550 may include insulating patterns 510P, 521, and 522. The first insulating layer 510 may include a first insulating pattern 510P, and the second insulating layer 520 may include a second insulating pattern 521 and a third insulating pattern 522.

[0145] The first insulating layer 510 includes a first insulating pattern 510P. The first insulating pattern 510P may be located between the first electrode 210 and the second electrode 220 and may partially overlap the first electrode 210 and the second electrode 220. The first insulating pattern 510P may cover portions of the first electrode 210 and the second electrode 220 located on the via layer 200 and portions of the first electrode 210 and the second electrode 220 inclined on the inner bank portions 410 and 420. In addition, the first insulating pattern 510P may contact the via layer 200 in a region where the first electrode 210 is spaced apart from the second electrode 220. Since the first insulating pattern 510P contacts the first electrode 210, the second electrode 220, and the via layer 200, a step may be formed on the upper surface of the first insulating pattern 510P, and a space may be formed between the first insulating pattern 510P and the light emitting element 300 positioned on the upper surface of the first insulating pattern 510P. The third insulating pattern 522 may be positioned in the formed space.

[0146] During the process of manufacturing the display device 10, the first insulating layer 510 may be placed to cover the first electrode 210 and the second electrode 220 on the through hole layer 200, and then the openings OP1 and OP2 may be formed (see Fig.11 ) to expose the first electrode 210 and the second electrode 220. The first insulating pattern 510P is a portion in which the openings OP1 and OP2 are not formed in the first insulating layer 510, and the light emitting element 300 may be located on the first insulating pattern 510P. In an embodiment, a width W4 of the first insulating pattern 510P measured in the first direction DR1 may be greater than a length W1 of the light emitting element 300 measured in the first direction DR1. In addition, the width W4 of the first insulating pattern 510P may be greater than a gap between the first electrode 210 and the second electrode 220. However, the present disclosure is not limited thereto.

[0147] The second insulating layer 520 may include a second insulating pattern 521 and a third insulating pattern 522. The second insulating pattern 521 may be located on the light emitting element 300, and may be formed to partially surround an outer surface of the light emitting element 300.

[0148] The second insulating pattern 521 may be located on a portion of the outer surface of the light emitting element 300, and may perform a function of fixing (attaching) the light emitting element 300. During a process of manufacturing the display device 10, the light emitting element 300 between the first electrode 210 and the second electrode 220 may be fixed (attached) by forming the second insulating layer 520 (or the second insulating pattern 521) on the light emitting element 300 between the first electrode 210 and the second electrode 220.

[0149] The third insulating pattern 522 may be located between the light emitting element 300 and the first insulating pattern 510P. The third insulating pattern 522 may be formed so that during the process of manufacturing the display device 10, the space between the light emitting element 300 and the first insulating pattern 510P is filled with a material constituting the second insulating layer 520. As described above, a space may be formed between the light emitting element 300 and the first insulating pattern 510P, and the third insulating pattern 522 may be formed in the space. However, the present disclosure is not limited thereto, and in some embodiments, the third insulating pattern 522 may be omitted.

[0150] In an embodiment, a portion of the lower surface of the second insulating pattern 521 may be in contact with the light emitting element 300, and another portion thereof may be in contact with the first insulating pattern 510P. The second insulating pattern 521 may include a first lower surface in contact with the light emitting element 300 and a second lower surface in contact with the first insulating pattern 510P. Figure 5 As shown in , in the region where the light emitting element 300 is positioned, the second insulating pattern 521 may be located on the light emitting element 300 to form a first lower surface in contact with the light emitting element 300. Figure 6As shown in , in the region where the light emitting element 300 is not positioned, the second insulating pattern 521 may be located on the first insulating pattern 510P, and a second lower surface in contact with the first insulating pattern 510P may be formed. In addition, the second insulating pattern 521 may also partially contact the upper surface of the third insulating pattern 522. The second insulating pattern 521 may extend in one direction (e.g., the second direction DR2) between the first electrode 210 and the second electrode 220, and may include a region overlapping with the light emitting element 300 and a region not overlapping with the light emitting element 300. In an embodiment, the first lower surface of the second insulating pattern 521 located in the region overlapping with the light emitting element 300 may contact the light emitting element 300, and the second lower surface of the second insulating pattern 521 located in the region not overlapping with the light emitting element 300 may contact the first insulating pattern 510P and the third insulating pattern 522.

[0151] The second insulating pattern 521 may be located between the first contact electrode 261 and the second contact electrode 262 and may insulate the first contact electrode 261 from the second contact electrode 262. The second insulating pattern 521 may contact the first contact electrode 261 and the second contact electrode 262. The second insulating pattern 521 of the second insulating layer 520 may insulate the first contact electrode 261 from the second contact electrode 262 to prevent (or reduce) the transmission of electrical signals transmitted from the electrodes 210 and 220 through the first contact electrode 261 and the second contact electrode 262.

[0152] According to one embodiment, the width W2 of the second insulating pattern 521 measured in the first direction DR1 may be smaller than the length W1 of the light emitting element 300. In addition, the width W2 of the second insulating pattern 521 may be smaller than the width W4 of the first insulating pattern 510P. The second insulating pattern 521 may have a width W2 smaller than the length W1 of the light emitting element 300 to allow both ends of the light emitting element 300 to be exposed. The first contact electrode 261 and the second contact electrode 262 may contact both ends of the light emitting element 300, respectively, and may also contact the side surface of the light emitting element 300 that may be exposed when the second insulating pattern 521 is not present. Therefore, the area in which the first contact electrode 261 and the second contact electrode 262 contact the light emitting element 300 may be increased, and the disconnection of the materials constituting the contact electrodes 261 and 262 may be prevented (or reduced).

[0153] The third insulating pattern 522 may be located in the space between the first insulating pattern 510P and the light emitting element 300, and the width W3 of the third insulating pattern 522 measured in the first direction DR1 may be changed according to the step formed in the first insulating pattern 510P. However, the width of the recessed portion formed in the first insulating pattern 510P (i.e., the width W3 of the third insulating pattern 522) may be less than the length W1 of the light emitting element 300 to allow the light emitting element 300 to be located on the first insulating pattern 510P. In addition, in an embodiment, the width W2 of the second insulating pattern 521 may be greater than the width W3 of the third insulating pattern 522. Because the width W2 of the second insulating pattern 521 is greater than the width W3 of the third insulating pattern 522, the third insulating pattern 522 under the light emitting element 300 may fully fill the recessed portion formed in the first insulating pattern 510P. However, the present disclosure is not limited thereto, and the width W2 of the second insulating pattern 521 and the width W3 of the third insulating pattern 522 may be modified differently.

[0154] According to one embodiment, the second insulating pattern 521 may include a first upper surface 521U that is not in contact with the first contact electrode 261 and the second contact electrode 262. In the process of manufacturing the display device 10, the first contact electrode 261 and the second contact electrode 262 may be formed simultaneously (or in parallel) in one process by a lift-off process. Here, the lift-off layer PR (see Fig.13 ) may be located in the second insulator layer 520' (see Fig.12 ). The portion of the second insulator layer 520' on which the lift-off layer PR is positioned and remains may form a second insulating pattern 521, and the first contact electrode 261 and the second contact electrode 262 may be located in a region where the lift-off layer PR does not exist. Since the lift-off layer PR is located on the first upper surface 521U of the second insulating pattern 521, the material constituting the contact electrode 260 is not formed in the region. Therefore, the first upper surface 521U of the second insulating pattern 521, which is subsequently exposed by removing the lift-off layer PR, may not contact the first contact electrode 261 and the second contact electrode 262.

[0155] In addition, according to one embodiment, the second insulating pattern 521 may include a first contact surface CS1 in contact with the first contact electrode 261 and a second contact surface CS2 in contact with the second contact electrode 262. The first contact surface CS1 may be located on a first side surface of the second insulating pattern 521, and the second contact surface CS2 may be located on a second side surface of the second insulating pattern 521. In the second insulating pattern 521, the first upper surface 521U may not be in contact with the contact electrode 260, and only the first side surface and the second side surface may be in contact with the contact electrode 260. The first upper surface 521U of the second insulating pattern 521 may be a surface substantially parallel to the via layer 200, and the first side surface and the second side surface may be surfaces intersecting the via layer 200 (e.g., perpendicular to the via layer 200). Therefore, according to one embodiment, the first contact surface CS1 as a surface where the first contact electrode 261 contacts the second insulating pattern 521 and the second contact surface CS2 as a surface where the second contact electrode 262 contacts the second insulating pattern 521 may not be parallel to the first upper surface 521U of the second insulating pattern 521. The first and second contact surfaces CS1 and CS2 may be formed non-parallel to the first upper surface 521U of the second insulating pattern 521 , and may be formed to cross the via layer 200 (eg, perpendicular to the via layer 200 ).

[0156] Upper surfaces 261U and 262U may be defined in the first contact electrode 261 and the second contact electrode 262 contacting the second insulating pattern 521. The first contact electrode 261 may include a second upper surface 261U, which is an upper surface of a portion of the first contact electrode 261 connected to the first contact surface CS1, and the second contact electrode 262 may include a third upper surface 262U, which is an upper surface of a portion of the second contact electrode 262 connected to the second contact surface CS2. According to one embodiment, the first upper surface 521U of the second insulating pattern 521 may be coplanar with the second upper surface 261U of the first contact electrode 261 and the third upper surface 262U of the second contact electrode 262. For example, the first upper surface 521U of the second insulating pattern 521 may form the same flat (or substantially flat) surface together with the second upper surface 261U and the third upper surface 262U.

[0157] The first contact electrode 261 and the second contact electrode 262 may be formed by a lift-off process. The material constituting (used to form) the contact electrodes 261 and 262 may not be formed on the first upper surface 521U of the second insulating pattern 521, and may be formed only on the side surface of the second insulating pattern 521. The first contact electrode 261 and the second contact electrode 262 formed after removing the lift-off layer PR may be formed only on the side surface of the second insulating pattern 521, and the second upper surface 261U and the third upper surface 262U may be coplanar with the first upper surface 521U of the second insulating pattern 521. However, the present disclosure is not limited thereto, and in some embodiments, the second upper surface 261U and the third upper surface 262U may form a step with the first upper surface 521U of the second insulating pattern 521. It will be described in more detail below.

[0158] In the display device 10, the lift-off process is performed so that the first contact electrode 261 and the second contact electrode 262 can be formed in the same process, and the number of manufacturing processes can be reduced. In addition, the second insulating pattern 521 formed by arranging the lift-off layer PR can contact the contact electrodes 261 and 262 on the side surface of the second insulating pattern 521. Due to the width W2 of the second insulating pattern 521 (which is less than the length W1 of the light emitting element 300), the contact area between the light emitting element 300 and the contact electrodes 261 and 262 can be increased, and the material forming the contact electrodes 261 and 262 can be prevented or reduced from being disconnected.

[0159] Figure 7 is a schematic diagram of a light emitting element according to one embodiment.

[0160] The light emitting element 300 may be an LED. For example, the light emitting element 300 may be an inorganic LED having a size in micrometer units or a size in nanometer units and made of an inorganic material. The inorganic LED may be arranged between two electrodes, wherein polarity is formed by forming an electric field in a specific (e.g., set) direction between the two electrodes facing each other. Due to the electric field formed between the two electrodes, the light emitting element 300 may be arranged between the two electrodes.

[0161] The light emitting element 300 according to an embodiment may have a shape extending in one direction. The light emitting element 300 may have the shape of a rod, a wire, a tube, etc. In an embodiment, the light emitting element 300 may have a cylindrical shape or a rod shape. However, the shape of the light emitting element 300 is not limited thereto, and the light emitting element 300 may have the shape of a cube, a rectangular parallelepiped, a polygonal column (such as a hexagonal column, etc.), or may have a shape extending in one direction and having a partially inclined outer surface. Therefore, the light emitting element 300 may have various suitable shapes. A plurality of semiconductors (which will be described in more detail below) included in the light emitting element 300 may have a structure in which semiconductors are sequentially arranged or stacked in one direction.

[0162] The light emitting element 300 may include a semiconductor layer doped with conductive type (eg, p-type or n-type) impurities. The semiconductor layer may receive an electrical signal applied from an external power source and may emit light within a specific (eg, set) wavelength range.

[0163] According to an embodiment of the light emitting element 300, a specific (e.g., set) wavelength range of light can be emitted. In an embodiment, the active layer 330 can emit blue light in a central wavelength range of 450nm to 495nm. However, the central wavelength range of blue light is not limited to the range described above, and it should be understood that the central wavelength range includes any wavelength range that can be considered as blue in the art. In addition, the light emitted from the active layer 330 of the light emitting element 300 is not limited thereto, and the light can be green light in a central wavelength range of 495nm to 570nm or red light in a central wavelength range of 620nm to 750nm. Hereinafter, an example in which the light emitting element 300 emits blue light will be described.

[0164] refer to Figure 7 The light emitting element 300 may include a first semiconductor layer 310 , a second semiconductor layer 320 , an active layer 330 , an electrode layer 370 and an insulating layer 380 .

[0165] For example, the first semiconductor layer 310 may be an n-type semiconductor having a first conductivity type. For example, when the light emitting element 300 emits light in a blue wavelength range, the first semiconductor layer 310 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-yN (0≤x≤1, 0≤y≤1 and 0≤x+y≤1) semiconductor material. For example, the semiconductor material may be one or more selected from AlGaInN, GaN, AlGaN, InGaN, AlN and InN doped with n-type impurities. The first semiconductor layer 310 may be doped with a first conductive type dopant. For example, the first conductive type dopant may be Si, Ge, Sn, etc. In an embodiment, the first semiconductor layer 310 may be n-GaN doped with n-type Si. The length of the first semiconductor layer 310 may be in the range of 1.5μm to 5μm, but the present disclosure is not limited thereto.

[0166] The second semiconductor layer 320 may be located on the active layer 330, which will be described in more detail below. For example, the second semiconductor layer 320 may be a p-type semiconductor having a second conductivity type. For example, when the light emitting element 300 emits light in a blue wavelength range or a green wavelength range, the second semiconductor layer 320 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-y N (0≤x≤1, 0≤y≤1 and 0≤x+y≤1) semiconductor material. For example, the semiconductor material may be one or more selected from AlGaInN, GaN, AlGaN, InGaN, AlN and InN doped with p-type impurities. The second semiconductor layer 320 may be doped with a second conductive type dopant. For example, the second conductive type dopant may be Mg, Zn, Ca, Se, Ba, etc. In an embodiment, the second semiconductor layer 320 may be p-GaN doped with p-type Mg. The length of the second semiconductor layer 320 may be in the range of 0.05 μm to 0.10 μm, but the present disclosure is not limited thereto.

[0167] Although the first semiconductor layer 310 and the second semiconductor layer 320 have been shown to be formed of one layer, the present disclosure is not limited thereto. According to some embodiments, the first semiconductor layer 310 and the second semiconductor layer 320 may further include additional layers, such as a cladding layer and / or a tensile strain barrier reduction (TSBR) layer, depending on the material of the active layer 330. This will be described in more detail below with reference to other drawings.

[0168] The active layer 330 may be located between the first semiconductor layer 310 and the second semiconductor layer 320. The active layer 330 may include a material having a single quantum well structure or a multiple quantum well structure. When the active layer 330 includes a material having a multiple quantum well structure, the active layer 330 may have a structure in which quantum layers and well layers are alternately stacked. In response to an electrical signal applied through the first semiconductor layer 310 and the second semiconductor layer 320, the active layer 330 may emit light due to the recombination of electron-hole pairs. For example, when the active layer 330 emits light in a blue wavelength range, the active layer 330 may include materials such as AlGaN, AlGaInN, etc. For example, when the active layer 330 has a multiple quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layers may include materials such as AlGaN and / or AlGaInN, and the well layers may include materials such as GaN and / or AlInN. In an embodiment, the active layer 330 includes AlGaInN as a quantum layer and AlInN as a well layer. As described above, the active layer 330 may emit blue light in a central wavelength range of 450 nm to 495 nm.

[0169] However, the present disclosure is not limited thereto, and the active layer 330 may have a structure in which a semiconductor material having a large band gap energy and a semiconductor material having a small band gap energy are alternately stacked, or may include different group III and / or group V semiconductor materials according to the wavelength range of the emitted light. The active layer 330 is not limited to emitting light in the blue wavelength range, and in some cases, the active layer 330 may emit light in the red wavelength range or the green wavelength range. The length of the active layer 330 may be in the range of 0.05 μm to 0.10 μm, but the present disclosure is not limited thereto.

[0170] Light emitted from the active layer 330 may be emitted not only to the outer surface of the light emitting element 300 in the length direction but also to both side surfaces of the light emitting element 300. Directivity of light emitted from the active layer 330 is not limited to one direction.

[0171] The electrode layer 370 may be an ohmic contact electrode. However, the present disclosure is not limited thereto, and the electrode layer 370 may be a Schottky contact electrode. The light emitting element 300 may include at least one electrode layer 370. Figure 7 In the embodiment of the present invention, the light emitting element 300 has been shown to include a single electrode layer 370, but the present disclosure is not limited thereto. In some cases, the light emitting element 300 may include more electrode layers 370, or the electrode layer 370 may be omitted. The description of the light emitting element 300 provided herein may also be applied even when the number of electrode layers 370 is changed or another structure is further included.

[0172] In the display device 10 according to one embodiment, when the light emitting element 300 is electrically connected to the electrode or the contact electrode, the electrode layer 370 can reduce the resistance between the light emitting element 300 and the electrode, or reduce the resistance between the light emitting element 300 and the contact electrode. The electrode layer 370 may include a conductive metal. For example, the electrode layer 370 may include at least one selected from Al, titanium (Ti), In, gold (Au), Ag, ITO, IZO, and ITZO. In addition, the electrode layer 370 may include a semiconductor material doped with n-type or p-type impurities. The electrode layer 370 may include the same material or different materials, but the present disclosure is not limited thereto.

[0173] The insulating layer 380 may surround the outer surfaces of the plurality of semiconductor layers and the electrode layer 370 described above. In an embodiment, the insulating layer 380 may surround at least the outer surface of the active layer 330 and may extend in one direction in which the light emitting element 300 extends. The insulating layer 380 may be used to protect the components of the light emitting element 300. For example, the insulating layer 380 may be formed to surround the side surface of the component and expose both ends of the light emitting element 300 in the length direction thereof.

[0174] In the drawings, the insulating layer 380 has been shown to be formed to extend in the length direction of the light emitting element 300 to cover from the first semiconductor layer 310 to the side surface of the electrode layer 370, but the present disclosure is not limited thereto. When the insulating layer 380 covers only the outer surface of some semiconductor layers (including the active layer 330) or only a portion of the outer surface of the electrode layer 370, the outer surface of the electrode layer 370 may be partially exposed. In addition, the upper surface of the insulating layer 380 may be formed to be rounded in cross section in a region adjacent to at least one end of the light emitting element 300.

[0175] The thickness of the insulating layer 380 may be in the range of 10 nm to 1.0 μm, but the present disclosure is not limited thereto. In some embodiments, the thickness of the insulating layer 380 may be about 40 nm.

[0176] The insulating layer 380 may include SiO x 、SiN x 、SiO x N y 、AlN、Al 2 O 3 Therefore, it is possible to prevent an electrical short circuit that may occur when the active layer 330 is in direct contact with an electrode through which an electrical signal is transmitted to the light emitting element 300 (or reduce the risk of an electrical short circuit). In addition, because the insulating layer 380 protects the outer surface of the light emitting element 300 including the active layer 330, it is possible to prevent the degradation of the light emitting efficiency (or reduce the risk of degradation of the light emitting efficiency).

[0177] In addition, in some embodiments, the outer surface of the insulating layer 380 may be surface treated. In the manufacture of the display device 10, the light emitting element 300 may be arranged by injecting it onto the electrode in a state of being distributed in a predetermined (or set) ink. Here, in order to allow the light emitting element 300 to maintain a distributed state in the ink without agglomerating with another light emitting element 300 adjacent thereto, the insulating layer 380 may be hydrophobic or hydrophilic.

[0178] The light emitting element 300 may have a length h in the range of 1 μm to 10 μm or 2 μm to 6 μm (and, for example, 3 μm to 5 μm). In addition, the diameter of the light emitting element 300 may be in the range of 300 nm to 700 nm, and the aspect ratio of the light emitting element 300 may be in the range of 1.2 to 100. However, the present disclosure is not limited thereto, and the plurality of light emitting elements 300 included in the display device 10 may have different diameters according to composition differences between the active layers 330. In some embodiments, the diameter of the light emitting element 300 may be about 500 nm.

[0179] Hereinafter, a method of manufacturing the display device 10 will be described with reference to other drawings.

[0180] Figure 8 is a flowchart illustrating a method of manufacturing a display device according to one embodiment.

[0181] refer to Figures 1 to 8 According to an embodiment, a method for manufacturing a display device 10 may include: forming a first electrode 210 and a second electrode 220 on a through-hole layer 200, forming a light-emitting element 300 between the first electrode 210 and the second electrode 220, and forming an insulating layer on the light-emitting element 300 (S100); forming a lift-off layer PR on the insulating layer (see Fig.13 ) and patterning the insulating layer to form an insulating pattern on the light emitting element 300 (S200); and forming a metal layer MTL on the first electrode 210, the second electrode 220 and the stripping layer PR, and removing the stripping layer PR to form a first contact electrode 261 in contact with one side surface of the insulating pattern and a second contact electrode 262 in contact with the other side surface of the insulating pattern (S300).

[0182] The process of manufacturing the display device 10 may include a lift-off process to form the first contact electrode 261 and the second contact electrode 262. The first contact electrode 261 and the second contact electrode 262 formed by the lift-off process may be formed simultaneously (or in parallel) in one process and may be coplanar with the upper surface of the second insulating pattern 521, where the first contact electrode 261 and the second contact electrode 262 are in contact with the second insulating pattern 521.

[0183] Hereinafter, a process of manufacturing the display device 10 will be described in more detail with reference to other drawings.

[0184] Figures 9 to 18 is a cross-sectional view illustrating a process of manufacturing a display device according to one embodiment.

[0185] First reference Fig. 9 , a first inner bank 410, a second inner bank 420, a first electrode 210 and a second electrode 220 are formed on the through hole layer 200, and a first insulator layer 510' is formed to cover the first inner bank 410, the second inner bank 420, the first electrode 210 and the second electrode 220. Because the structures of the first inner bank 410, the second inner bank 420, the first electrode 210 and the second electrode 220 formed on the through hole layer 200 are the same as those of the above reference Figure 4 The structures described are the same, so their detailed description will not be repeated here.

[0186] Unlike the first insulating layer 510, the first insulator layer 510' may cover all members on the via layer 200. In the operation of forming the first insulating layer 510, openings OP1 and OP2 respectively exposing portions of the first and second electrodes 210 and 220 may be formed in the first insulator layer 510'.

[0187] Next, refer to Fig.10 , on the first insulator layer 510', the light emitting element 300 is positioned between the first electrode 210 and the second electrode 220. The method of arranging the light emitting element 300 includes injecting a solution containing the light emitting element 300 between the electrodes 210 and 220, and applying an electric signal to each of the electrodes 210 and 220 to form an electric field between the electrodes 210 and 220. The electric field may transmit a dielectrophoretic force to the light emitting element 300 distributed in the solution, and due to the dielectrophoretic force, the light emitting element 300 may be arranged between the first electrode 210 and the second electrode 220 on the first insulator layer 510'. The electrodes 210 and 220 and the light emitting element 300 have been described herein above, and therefore, a repeated description thereof will not be repeated here.

[0188] Next, refer to Fig.11, a portion of the first insulator layer 510' is patterned to form openings OP1 and OP2 that partially expose the first electrode 210 and the second electrode 220, respectively. The openings OP1 and OP2 may include a first opening OP1 that exposes the first electrode 210 and a second opening OP2 that exposes the second electrode 220. The first opening OP1 and the second opening OP2 may expose regions of the electrodes 210 and 220 that are located on the inner banks 410 and 420, respectively. The openings OP1 and OP2 are formed in the first insulator layer 510', so that the first insulating layer 510 including the first insulating pattern 510P may be formed. The description of the first insulating layer 510 is the same as described above.

[0189] Next, refer to Fig.12 , a second insulator layer 520' is formed to cover the first insulating layer 510, the exposed first electrode 210 and the second electrode 220, and the light emitting element 300. The second insulator layer 520' may be patterned in a subsequent process to form the second insulating layer 520. In an embodiment, the second insulator layer 520' may include an organic insulating material. The second insulator layer 520' may be formed to surround at least the outer surface of the light emitting element 300, and may be filled in a space 522' formed between the light emitting element 300 and the first insulating pattern 510P. The second insulator layer 520' filling the space 522' may constitute a third insulating pattern 522 of the second insulating layer 520.

[0190] Next, refer to Fig.13 and Fig.14 , a stripping layer PR is formed on the second insulator layer 520', and the second insulator layer 520' is patterned along the stripping layer PR to form the second insulating layer 520. The type (or kind) of the stripping layer PR is not particularly limited as long as it can be used as a mask in the patterning process. The stripping layer PR may be a photoresist. The process of patterning the second insulator layer 520' may be a suitable etching process. For example, the second insulator layer 520' may be patterned by a dry etching process. However, the present disclosure is not limited thereto.

[0191] The lift-off layer PR may be located on the second insulator layer 520' in a region overlapping the light emitting element 300. In a subsequent process, the region of the second insulator layer 520' in which the lift-off layer PR is located may remain without being removed, so that a second insulating pattern 521 may be formed. In some embodiments, a width W5 of the lift-off layer PR measured in the first direction DR1 may be less than a length of the light emitting element 300, and may be substantially the same as a width of the second insulating pattern 521. Fig.14As shown in , when the second insulator layer 520' is patterned along the lift-off layer PR, the region in which the lift-off layer PR is placed may form a second insulating pattern 521, and the second insulator layer 520' located below the light emitting element 300 may form a third insulating pattern 522. In order to allow the second insulating pattern 521 to have a width smaller than the length of the light emitting element 300, the width W5 of the lift-off layer PR may be smaller than the length of the light emitting element 300. However, the present disclosure is not limited thereto.

[0192] When the second insulator layer 520' is patterned along the stripping layer PR, the two ends of the light emitting element 300 may be exposed. Here, the width of the second insulating pattern 521 can be controlled, and in addition, the degree to which the side surfaces of the two ends of the light emitting element 300 are exposed can be controlled by adjusting the width W5 of the stripping layer PR. When the width W5 of the stripping layer PR is greater than the length of the light emitting element 300, the two ends of the light emitting element 300 may not be fully exposed. In this case, the two ends of the light emitting element 300 may not be in smooth contact with the contact electrodes 261 and 262 formed in the subsequent process. In order to prevent (or reduce) this problem, the width W5 of the stripping layer PR can be adjusted to have a range below a predetermined (or set) level. For example, the second insulator layer 520' can be patterned to expose the side surfaces of the two ends of the light emitting element 300, so that the contact area between the light emitting element 300 and the contact electrodes 261 and 262 can be increased.

[0193] Next, refer to Fig.15 , a metal layer MTL is formed on the first electrode 210, the second electrode 220, the lift-off layer PR, and the first insulating layer 510. The process of forming the metal layer MTL may be performed by one or more suitable processes such as a sputtering process, an atomic layer deposition (ALD) process, etc. The metal layer MTL may form the contact electrodes 261 and 262 in a subsequent process. For example, the metal layer MTL may include the same material as the contact electrodes 261 and 262.

[0194] The metal layer MTL may be formed on the entire through hole layer 200. The metal layer MTL may contact the first insulating layer 510, the exposed first electrode 210, the exposed second electrode 220, the lift-off layer PR, and the light emitting element 300 except for the first insulating pattern 510P. The metal layer MTL may include a first metal layer MTL1 located on the first electrode 210 and in contact with one end of the light emitting element 300, a second metal layer MTL2 located on the second electrode 220 and in contact with the other end of the light emitting element 300, and a third metal layer MTL3 located on the lift-off layer PR.

[0195] In a subsequent process, the third metal layer MTL3 may be removed together with the lift-off layer PR, and the first metal layer MTL1 and the second metal layer MTL2 may respectively form the first contact electrode 261 and the second contact electrode 262. The first metal layer MTL1 may contact a first side surface of the second insulating pattern 521 (including one end of the light emitting element 300), and the second metal layer MTL2 may contact a second side surface of the second insulating pattern 521 (including the other end of the light emitting element 300).

[0196] In one or more embodiments, the metal layer MTL may also be formed on both side surfaces of the lift-off layer PR. However, when the metal layer MTL is formed by a sputtering process, the metal layer MTL formed on the lift-off layer PR may have a thin thickness and thus may be easily removed in a subsequent process.

[0197] Next, refer to Figure 6 and 16 , remove the stripping layer PR. The third metal layer MTL3 may be removed simultaneously with the stripping layer PR, and the first upper surface 521U of the second insulating pattern 521 may be exposed. Because the stripping layer PR is located on the first upper surface 521U of the second insulating pattern 521, the metal layer MTL is not formed there. Therefore, the contact electrodes 261 and 262 may not exist on the first upper surface 521U exposed by removing the stripping layer PR. The first contact electrode 261 and the second contact electrode 262 may contact the first side surface and the second side surface of the second insulating pattern 521, respectively, to form a first contact surface CS1 and a second contact surface CS2. The description thereof is the same as the above description. Then, the display device 10 may be manufactured by forming a passivation layer 550 on the entire through-hole layer 200.

[0198] The method of manufacturing the display device 10 according to one embodiment can form the first contact electrode 261 and the second contact electrode 262 simultaneously (or in parallel) in one process using a lift-off process. Therefore, the first upper surface 521U of the second insulating pattern 521 exposed by removing the lift-off layer PR can be coplanar with the second upper surface 261U of the first contact electrode 261 and the third upper surface 262U of the second contact electrode 262. In addition, according to one embodiment, the method of manufacturing the display device 10 can reduce the number of processes required to form the contact electrodes 261 and 262, and can prevent (or reduce) contact failures between the contact electrodes 261 and 262 and the two ends of the light emitting element 300.

[0199] In some embodiments, in a region where the light emitting element 300 is not positioned between the first electrode 210 and the second electrode 220 , the second insulating pattern 521 and the third insulating pattern 522 of the second insulating layer 520 may contact each other.

[0200] refer to Fig.17 and Fig.18 , in the second insulating layer 520 formed by patterning the second insulator layer 520', the second insulating pattern 521 may be directly located on the first insulating pattern 510P and may contact the third insulating pattern 522 formed in the recessed space of the first insulating pattern 510P. For example, the lower surface of the second insulating pattern 521 may contact the first insulating pattern 510P and the third insulating pattern 522. The detailed description thereof is the same as described above.

[0201] In some embodiments, the second upper surface 261U of the first contact electrode 261 and the third upper surface 262U of the second contact electrode 262 may not be coplanar with the first upper surface 521U of the second insulation pattern 521 .

[0202] Fig.19 is a cross-sectional view showing a portion of a display device according to another embodiment.

[0203] refer to Fig.19 In the display device 10_1 according to an embodiment, at least one of the second upper surface 261U_1 of the first contact electrode 261_1 and the third upper surface 262U_1 of the second contact electrode 262_1 may be spaced apart from a reference surface formed by the first upper surface 521U_1 of the second insulating pattern 521_1. Figure 5 The implementation differences are: Figure 5 The embodiment does not include a portion in which the second insulating pattern 521_1, the first contact electrode 261_1, and the second contact electrode 262_1 are not coplanar with each other. Hereinafter, the repeated description will not be repeated, and instead, the following description will focus on the differences between the described embodiment and the embodiments already described above in this document. Figures 19 to 26 In the description of , elements identical to those described above are denoted by similar reference numerals (eg, CS1_1, CS2_1, 550_1, 510_1, 510P_1, 522_1, 520_1, etc.).

[0204] exist Fig.19In the display device 10_1 of the embodiment of the present invention, the first upper surface 521U_1 of the second insulating pattern 521_1 may be spaced apart from the second upper surface 261U_1 of the first contact electrode 261_1 and the third upper surface 262U_1 of the second contact electrode 262_1. When a reference surface formed by the first upper surface 521U_1 is defined, the second upper surface 261U_1 and the third upper surface 262U_1 may be spaced apart from the reference surface. As shown in the figure, the height Ha of the second insulating pattern 521_1 (measured from the light emitting element 300 to the first upper surface 521U_1) may be greater than each of the height Hb of the first contact electrode 261_1 (measured from the light emitting element 300 to the second upper surface 261U_1) and the height Hc of the second contact electrode 262_1 (measured from the light emitting element 300 to the third upper surface 262U_1). Therefore, the second insulating pattern 521_1 may include an exposed surface (portion) 521S_1, and both side surfaces of the exposed surface (portion) 521S_1 are not in contact with the contact electrodes 261_1 and 262_1. The first upper surface 521U_1, the second upper surface 261U_1, and the third upper surface 262U_1 may be substantially parallel to each other, but a step may be formed therebetween. With respect to the light emitting element 300, the first upper surface 521U_1 of the second insulating pattern 521_1 may be formed at a position higher than the second upper surface 261U_1 of the first contact electrode 261_1 and the third upper surface 262U_1 of the second contact electrode 262_1.

[0205] See also Fig. 20 Such a structure of the display device 10_1 may be formed by further disposing a hard mask layer HM between the second insulator layer 520 ′_1 and the lift-off layer PR during the manufacturing process.

[0206] Figure 20 to Figure 23 It shows the manufacturing Fig.19 A cross-sectional view of a process for a display device.

[0207] refer to Figure 20 to Figure 23 In the method of manufacturing the display device 10_1, a hard mask layer HM may be further formed between the second insulator layer 520'_1 and the lift-off layer PR. The hard mask layer HM may include a material having an etching selectivity relative to the second insulator layer 520'_1. When the hard mask layer HM and the second insulator layer 520'_1 are etched along the lift-off layer PR, the hard mask layer HM may maintain the same width as the lift-off layer PR, while the second insulator layer 520'_1 may maintain a width smaller than that of the lift-off layer PR. For example, Fig.21As shown in , the width W2 of the second insulating pattern 521_1 may be smaller than the width W6 of the hard mask layer HM remaining after etching. Then, when forming the metal layer MTL_1, a portion of the side surface of the second insulating pattern 521_1 may be covered by the hard mask layer HM, and the material constituting the metal layer MTL_1 may not be deposited on the portion.

[0208] like Fig. 22 As shown in , the first metal layer MTL1_1 and the second metal layer MTL2_1 may be deposited only on a portion of the side surface of the second insulating pattern 521_1, and the first metal layer MTL1_1 and the second metal layer MTL2_1 may not be formed in a portion adjacent to the hard mask layer HM. The third metal layer MTL3_1 may be formed on the hard mask layer HM, and as shown in Fig.23 As shown in , the third metal layer MTL3_1 may be removed together with the hard mask layer HM. After removing the hard mask layer HM, the first metal layer MTL1_1 and the second metal layer MTL2_1 may form the first contact electrode 261_1 and the second contact electrode 262_1, respectively, and the regions of both side surfaces of the second insulating pattern 521_1 where the material constituting the metal layer MTL_1 is not deposited may be exposed.

[0209] Due to manufacturing Fig.19 The process of manufacturing the display device 10_1 may include a process of forming a hard mask layer HM, and thus some portions of both side surfaces of the second insulating pattern 521_1 may not contact the first and second contact electrodes 261_1 and 262_1.

[0210] Fig.24 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0211] refer to Fig.24 In the display device 10_2 according to one embodiment, the third insulating pattern 522_2 of the second insulating layer 520_2 may be omitted. In the cross section, one side surface of the light emitting element 300 on the first insulating pattern 510P_2 may be in full contact with the first insulating pattern 510P_2. Fig.24 The implementation method and Figure 5 The embodiment of the present invention is different in that the third insulating pattern 522_2 is omitted. Except for the above description, the description of other configurations is the same as that described above, and therefore, the repeated description of the features described above in this document will not be repeated here.

[0212] See also Fig.25, the display device 10_3 may include more insulating layers in addition to those described herein. According to one embodiment, the display device 10_3 may further include a third insulating layer 530_3 formed to protect the first contact electrode 261_3.

[0213] Fig.25 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0214] refer to Fig.25 According to one embodiment, the display device 10_3 may further include a third insulating layer 530_3 on the first contact electrode 261_3. Figure 4 The display device 10 is different in that it further includes a third insulating layer 530_3, so that the second contact electrode 262_3 is in contact with the third insulating layer 530_3 (eg, in contact with the side surface of the third insulating layer 530_3). Figure 4 The following description will focus on the described embodiments and Figure 4 The differences between the implementations of

[0215] Fig.25 The display device 10_3 may include a first contact electrode 261_3 and a third insulating layer 530_3 that electrically insulates the first contact electrode 261_3 from the second contact electrode 262_3. The third insulating layer 530_3 may cover the first contact electrode 261_3 and the second insulating pattern 521_3 of the second insulating layer 520. The third insulating layer 530_3 may contact the first contact electrode 261_3 and contact the second contact electrode 262_3 on the upper surface of the second insulating pattern 521_3. The lower surface of the third insulating layer 530_3 may contact the upper surface of the first contact electrode 261_3 and the upper surface of the second insulating pattern 521_3. One side surface of the third insulating layer 530_3 may contact the second contact electrode 262_3.

[0216] In the display device 10_3, the first contact electrode 261_3 and the second contact electrode 262_3 may be formed using a lift-off process. In the display device 10_3 according to the present embodiment, the first contact electrode 261_3 and the second contact electrode 262_3 may be formed by different lift-off processes. When the first contact electrode 261_3 is formed together with the second insulating layer 520 in the same lift-off process, the upper surface of the first contact electrode 261_3 may be coplanar with the upper surface of the second insulating pattern 521_3 of the second insulating layer 520. The first contact electrode 261_3 may be in contact with one side surface of the second insulating pattern 521_3 and one end of the light emitting element 300. When the second contact electrode 262_3 is formed together with the third insulating layer 530_3 in the same lift-off process, the upper surface of the second contact electrode 262_3 may be coplanar with the upper surface of the third insulating layer 530_3. The second contact electrode 262_3 may make contact with the other side surface of the second insulating pattern 521_3 , one side surface of the third insulating layer 530_3 , and the other end portion of the light emitting element 300 .

[0217] The third insulating layer 530_3 may be located between the first contact electrode 261_3 and the second contact electrode 262_3 to electrically insulate the first contact electrode 261_3 from the second contact electrode 262_3. A side surface of the third insulating layer 530_3 that contacts the second contact electrode 262_3 may be aligned with another side surface of the second insulating pattern 521_3 (which contacts the second contact electrode 262_3). For example, one side surface of the third insulating layer 530_3 may be coplanar with another side surface of the second insulating pattern 521_3. In some embodiments, the third insulating layer 530_3 may include a first insulating layer 510 (see Figure 4 ) as in inorganic insulating materials.

[0218] The passivation layer 550 may be formed to protect the third insulating layer 530_3 and the second contact electrode 262_3. A repeated description thereof will not be repeated here.

[0219] See also Fig.26 According to some embodiments, the electrode rods 210S and 220S extending in the first direction DR1 may be omitted in the first electrode 210_4 and the second electrode 220_4 (see Figure 2 ).

[0220] Fig.26 is a plan view of one sub-pixel of a display device according to another embodiment.

[0221] refer to Fig.26In the display device 10_4, the first electrode 210_4 and the second electrode 220_4 may extend in one direction (eg, the second direction DR2). In the first electrode 210_4 and the second electrode 220_4, the electrode rods 210S and 220S extending in the first direction DR1 may be omitted (see Figure 2 ). Fig.26 The display device 10_4 and Figure 2 The display device 10 is different in that the electrode rods 210S and 220S are omitted and an additional second electrode 220_4 is included. Figure 2 The following description will focus on the described embodiments and Figure 2 The differences between the implementations of

[0222] like Fig.26 As shown in FIG. 1 , in each sub-pixel PXn, a plurality of first electrodes 210_4 and a plurality of second electrodes 220_4 may extend in the second direction DR2. The outer bank 430 may also extend in the second direction DR2. The second electrode 220_4 and the outer bank 430 may extend in the second direction DR2 to another sub-pixel PXn adjacent thereto. Therefore, the sub-pixels PXn adjacent in the second direction DR2 may receive the same electrical signal from the second electrode 220_4.

[0223] and Figure 2 The display device 10 is different. Fig.26 In the display device 10_4 of FIG. 1 , a second electrode contact hole CNTS may be formed in each of the second electrodes 220_4. The second electrode 220_4 may be electrically connected to the power electrode 162 (see FIG. 1 ) of the circuit element layer PAL through the second electrode contact hole CNTS located in each sub-pixel PXn. Figure 4 ).

[0224] The first electrode 210_4 may be formed to extend to the boundary of each sub-pixel PXn in the second direction DR2. Sub-pixels PXn adjacent in the second direction DR2 may include first electrodes 210_4 spaced apart from each other, and the first electrodes 210_4 may receive different electrical signals through the first electrode contact holes CNTD. During the process of manufacturing the display device 10, the shape of the first electrode 210_4 may be formed by forming the first electrode 210_4 extending in the second direction DR2 and then disconnecting (e.g., disconnecting) the first electrode 210_4 at the boundary between adjacent sub-pixels PXn.

[0225] The outer bank portion 430 may be located at a boundary between adjacent sub-pixels PXn in the first direction DR1 and may extend in the second direction DR2. In some embodiments, the outer bank portion 430 may be located at a boundary between adjacent sub-pixels PXn in the second direction DR2 and may extend in the first direction DR1. The description of the outer bank portion 430 is the same as that of the above reference numerals. Figure 3 In addition, included in Fig.26 The first contact electrode 261_4 and the second contact electrode 262_4 in the display device 10_4 are connected to Figure 3 The first contact electrode 261 and the second contact electrode 262 of the display device 10 are substantially identical.

[0226] exist Fig.26 , two first electrodes 210_4 and two second electrodes 220_4 have been shown to be alternately positioned and spaced apart from each other. However, the present disclosure is not limited thereto, and some electrodes may be omitted from the display device 10_4, or a greater number of electrodes may be formed in the display device 10_4.

[0227] exist Fig.26 In the embodiment of the present invention, a plurality of insulating patterns may be positioned between the first electrode 210_4 and the second electrode 220_4. Although only the second insulating pattern 521_4 has been shown in the figure, the first insulating pattern 510P and the third insulating pattern 522 (see Figure 4 ) may also be formed to overlap with the second insulating pattern 521_4. The second insulating pattern 521_4 may extend between the first electrode 210_4 and the second electrode 220_4 in the second direction DR2, and like the first electrode 210_4, the second insulating pattern 521_4 may be formed to extend to the boundary of each sub-pixel PXn. For example, the length of the second insulating pattern 521_4 measured in the second direction DR2 may be the same as the length of the first electrode 210_4 measured in the second direction DR2. However, the present disclosure is not limited thereto, and similar to the second electrode 220_4, the second insulating pattern 521_4 may also extend in the second direction DR2 to another sub-pixel PXn adjacent thereto to form a linear pattern on the front surface of the display device 10_4.

[0228] The structure of the light emitting element 300 is not limited to Figure 7 , and the light emitting element 300 may have another structure.

[0229] Fig. 27 is a schematic diagram of a light emitting element according to another embodiment. Fig.28 It is shown that Fig. 27 A cross-sectional view of a portion of a display device of a light emitting element.

[0230] First reference Fig. 27 , the light emitting element 300' may have a shape extending in one direction and having a partially inclined side surface. For example, the light emitting element 300' according to one embodiment may have a partially tapered shape.

[0231] The light emitting element 300 ′ may be formed such that a plurality of layers are not stacked in one direction, and each of the plurality of layers surrounds an outer surface of another layer. Fig. 27 The light emitting element 300' may be formed such that a plurality of semiconductor layers surround at least a portion of an outer surface of another layer. The light emitting element 300' may include a semiconductor core, at least a portion of the semiconductor core partially extending in one direction, and an insulating layer 380' formed to surround the semiconductor core. The semiconductor core may include a first semiconductor layer 310', an active layer 330', a second semiconductor layer 320', and an electrode layer 370'. In addition to the shapes of the constituent layers being partially different, Fig. 27 The light emitting element 300' and Figure 7 The light emitting element 300 is the same as that of the embodiment described above. In the following, the repeated contents will not be repeated, and the description will focus on the differences between the described embodiment and the embodiment described herein above.

[0232] According to one embodiment, the first semiconductor layer 310 ′ may extend in one direction, and both end portions thereof may be formed to be inclined (eg, narrowed) toward a central portion thereof. Fig. 27 The first semiconductor layer 310' may have a rod-shaped or cylindrical body and ends having inclined side surfaces on the upper and lower portions of the body. The upper end of the body may have a steeper slope than that of the lower end thereof.

[0233] The active layer 330' may surround the outer surface of the body of the first semiconductor layer 310'. The active layer 330' may have a ring shape extending in one direction. The active layer 330' may not be formed on the upper and lower ends of the first semiconductor layer 310'. The active layer 330' may be formed only on the non-inclined side surface of the first semiconductor layer 310'. However, the present disclosure is not limited thereto. Therefore, the light emitted from the active layer 330' may be emitted not only to the two ends of the light emitting element 300' in the length direction, but also to the entire side surface of the light emitting element 300' based on (along) the length direction. When compared with Figure 7 When compared with the light emitting element 300, Fig. 27 The light emitting element 300' may include an active layer 330' having a larger area, thereby emitting a larger amount of light.

[0234] The second semiconductor layer 320' may surround the outer surface of the active layer 330' and the upper end of the first semiconductor layer 310'. The second semiconductor layer 320' may include a ring-shaped body extending in one direction and an upper end having an inclined side surface. For example, the second semiconductor layer 320' may be in direct contact with the side surface of the active layer 330' parallel thereto and the inclined upper end of the first semiconductor layer 310'. However, the second semiconductor layer 320' is not formed on the lower end of the first semiconductor layer 310'.

[0235] The electrode layer 370' may surround the outer surface of the second semiconductor layer 320'. For example, the shape of the electrode layer 370' may be substantially the same as the shape of the second semiconductor layer 320'. In some embodiments, the electrode layer 370' may completely contact the outer surface of the second semiconductor layer 320'.

[0236] The insulating layer 380' may surround the outer surface of the electrode layer 370' and the first semiconductor layer 310'. The insulating layer 380' may be in direct contact with the electrode layer 370', the lower end of the first semiconductor layer 310', and the exposed lower end of the active layer 330' and the exposed lower end of the second semiconductor layer 320'. The light emitting element 300' may have a length h'.

[0237] Fig.28 Yes Fig. 27 FIG. 1 is a partial cross-sectional view of a display device 10 showing a light emitting element 300 ′. Fig.28 Show Figure 4 A portion of the region Xb-Xb'. Fig.28 According to one embodiment, the display device 10 may include Fig. 27 In addition to the different structures of the light emitting element 300', Fig.28 The display device 10 and Figure 4 The same as the display device 10. In the following, the combination will not be repeated here. Figure 4 The following description will focus on the described embodiments and Figure 4 The differences between the implementations of

[0238] As described above, the light emitting element 300' may include a plurality of layers and may be located between the first electrode 210 and the second electrode 220. The plurality of layers of the light emitting element 300' may be arranged in a direction parallel to the through hole layer 200 (e.g., parallel to the extension direction of the through hole layer 200). According to one embodiment, the light emitting element 300' may be positioned so that the through hole layer 200 is parallel to the extension direction of the body of the first semiconductor layer 310'. In the light emitting element 300', the insulating layer 380', the electrode layer 370', the second semiconductor layer 320', the active layer 330', and the first semiconductor layer 310' may be sequentially arranged on the first insulating layer 510 in a direction intersecting the through hole layer 200 (e.g., perpendicular to the through hole layer 200). In addition, because each layer of the light emitting element 300' is formed to surround the outer surface of another layer, the light emitting element 300' in the display device 10 may have a symmetrical structure based on (relative to) the first semiconductor layer 310'. For example, the light emitting element 300' may have a shape in which the active layer 330', the second semiconductor layer 320', the electrode layer 370' and the insulating layer 380' may be sequentially stacked in a direction intersecting (e.g., perpendicular) with the through-hole layer 200 based on (relative to) the first semiconductor layer 310'. However, the present disclosure is not limited thereto. The order in which the multiple layers of the light emitting element 300' are arranged may be reversed. In some cases, when the light emitting element 300' has another structure, the multiple layers may be arranged in a direction parallel to the through-hole layer 200.

[0239] exist Fig.28 In the display device 10 of the embodiment of the present invention, a portion of the insulating layer 380' of the light emitting element 300' may be removed, and the electrode layer 370' and the first semiconductor layer 310' may be partially exposed. During the process of manufacturing the display device 10, when the second insulating layer 520 is formed, the insulating layer 380' may be partially removed. The exposed region of the electrode layer 370' may contact the first contact electrode 261, and the exposed region of the first semiconductor layer 310' may contact the second contact electrode 262.

[0240] In addition, the light emitting element 300' may include a first end having an inclined side surface based on the body and a second end having a diameter smaller than the diameter of the body. In the light emitting element 300' positioned on the first insulating layer 510, the side surface of the body may be partially in contact with the first insulating layer 510 (e.g., the first insulating pattern 510P), and the first end and the second end of the light emitting element 300' may be spaced apart from the first insulating pattern 510P. The second insulating layer 520 may also be positioned in an area in which the body, the first end, and the second end of the light emitting element 300' are spaced apart from the first insulating pattern 510P. The description of other configurations is the same as described above, and therefore, the repeated description of the features described above in this article will not be repeated here.

[0241] The method of manufacturing a display device according to an embodiment may include forming a plurality of contact electrodes by performing a single lift-off process. The method of manufacturing a display device can reduce the number of processes for forming contact electrodes and ensure that the contact area of ​​the contact electrode contacts the light emitting element by adjusting the width of the lift-off layer.

[0242] In addition, the display device according to the embodiment may include a plurality of insulating patterns, and the insulating pattern on the light emitting element may include an upper surface coplanar with the contact electrode. The contact electrode is not formed on the upper surface of the insulating pattern, and only the side surface of the insulating pattern may contact the contact electrode.

[0243] For ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," "bottom," "top," etc. may be used herein to describe the relationship of one element or feature to another element or feature as shown in the drawings. It should be understood that the spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation shown in the drawings. For example, if the device in the drawings is turned over, the elements described as being "below" or "below" other elements or features will be oriented as being "above" or "on" the other elements or features. Therefore, the term "below" can include both above and below orientations. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0244] As used herein, the terms "substantially," "about," and similar terms are used as terms of approximation rather than terms of degree, and are intended to account for the inherent variations in measurements or calculations that those of ordinary skill in the art would recognize.

[0245] Any numerical range set forth herein is intended to include all subranges of the same numerical precision contained in the range set forth. For example, the range of "1.0 to 10.0" is intended to include all subranges between the minimum value 1.0 set forth and the maximum value 10.0 set forth (and including 1.0 and 10.0), that is, a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, for example, 2.4 to 7.6. Any maximum numerical limit set forth herein is intended to include all lower numerical limits contained therein, and any minimum numerical limit set forth in this specification is intended to include all higher numerical limits contained therein. Therefore, the applicant reserves the right to modify this specification (including claims) to clearly set forth any subranges contained in the range clearly set forth herein.

[0246] Although the present disclosure has been described with reference to some exemplary embodiments of the present disclosure, it will be appreciated by those skilled in the art that many changes and modifications may be made to the preferred embodiments without departing substantially from the principles of the present disclosure. Therefore, the disclosed embodiments are used only in a general and descriptive sense, and not for limiting purposes. The spirit and scope of the present disclosure are set forth in the appended claims and their equivalents.

Claims

1. Display device, include: substrate; A first electrode and a second electrode are spaced apart from each other along a first direction on the substrate; a first insulating pattern located on the substrate to cover at least a portion of each of the first electrode and the second electrode; a light emitting element, located between the first electrode and the second electrode on the first insulating pattern; a first contact electrode in contact with the first electrode and one end of the light emitting element; a second contact electrode in contact with the second electrode and the other end of the light emitting element; as well as a second insulating pattern located on the light emitting element, wherein at least a portion of the second insulating pattern contacts each of the first contact electrode and the second contact electrode, The second insulating pattern includes a first upper surface that is not in contact with the first contact electrode or the second contact electrode.

2. The display device according to claim 1, in, The light emitting element extends in the first direction, and A width of the second insulating pattern in the first direction is smaller than a length of the light emitting element in the first direction.

3. The display device according to claim 2, in, The width of the second insulation pattern is smaller than a width of the first insulation pattern in the first direction.

4. The display device according to claim 2, in, The second insulating pattern further includes a first lower surface in contact with the light emitting element and a second lower surface in contact with the first insulating pattern.

5. The display device according to claim 4, further comprising a third insulating pattern located between the light emitting element and the first insulating pattern, in, The light emitting element contacts the first insulating pattern and the third insulating pattern.

6. The display device according to claim 5, in, A width of the third insulation pattern in the first direction is smaller than the width of the second insulation pattern in the first direction.

7. The display device according to claim 5, in, At least a portion of the second lower surface of the second insulation pattern contacts the third insulation pattern.

8. The display device according to claim 1, in: The second insulating pattern includes a first contact surface in contact with the first contact electrode and a second contact surface in contact with the second contact electrode; as well as The first contact surface is located on a first side surface of the second insulation pattern, and the second contact surface is located on a second side surface of the second insulation pattern.

9. The display device according to claim 8, in, The first contact surface and the second contact surface are not parallel to the first upper surface.

10. The display device according to claim 9, in, The first contact surface and the second contact surface are perpendicular to the substrate.

11. The display device according to claim 8, in: The first contact electrode further includes a second upper surface connected to the first contact surface; The second contact electrode further includes a third upper surface connected to the second contact surface; and At least one selected from the second upper surface and the third upper surface is coplanar with the first upper surface.

12. The display device according to claim 11, in, At least one selected from the second upper surface and the third upper surface is spaced apart from a reference surface defined by the first upper surface.

13. The display device according to claim 8, in, The first contact electrode is in contact with a side surface of the one end portion of the light emitting element, and the second contact electrode is in contact with a side surface of the other end portion of the light emitting element.

14. Display devices, include: A first electrode extending in a first direction; a second electrode extending in the first direction and spaced apart from the first electrode in a second direction intersecting the first direction; a light emitting element, located between the first electrode and the second electrode; a first contact electrode, located on the first electrode and in contact with one end of the light emitting element; a second contact electrode, located on the second electrode and in contact with the other end of the light emitting element; as well as an insulating pattern located on the light emitting element between the first contact electrode and the second contact electrode, the insulating pattern comprising a first side surface and a second side surface facing the first side surface, wherein the insulating pattern extends in the first direction, the first side surface contacts the first contact electrode, and the second side surface contacts the second contact electrode, and The insulating pattern does not overlap the first contact electrode and the second contact electrode in a thickness direction.

15. The display device according to claim 14, in, A width of the insulating pattern in the second direction is equal to a width of a region between the first contact electrode and the second contact electrode in the second direction.

16. The display device according to claim 15, in, The light emitting element extends in the second direction, and the width of the insulating pattern is smaller than a length of the light emitting element in the second direction.

17. A method for manufacturing a display device, the method include: forming a first electrode and a second electrode on a substrate; A light emitting element is formed between the first electrode and the second electrode, forming an insulating layer on the light emitting element; forming a lift-off layer on the insulating layer, and patterning the insulating layer to form an insulating pattern on the light emitting element; forming a metal layer on the first electrode, the second electrode and the peeling layer, removing the release layer, and forming a first contact electrode in contact with one side surface of the insulating pattern and a second contact electrode in contact with the other side surface of the insulating pattern, The insulating pattern includes an upper surface that is not in contact with the first contact electrode or the second contact electrode.

18. The method according to claim 17, in, The first contact electrode is in contact with the first electrode and one end of the light emitting element, and the second contact electrode is in contact with the second electrode and the other end of the light emitting element.

19. The method according to claim 18, in: Forming the lift-off layer further includes forming a hard mask layer between the insulating layer and the lift-off layer; and The insulating pattern includes a region in which the one side surface and the other side surface are exposed and are not in contact with the first contact electrode or the second contact electrode.

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