Display substrate and manufacturing method thereof, and display device

Abstract

A display substrate and a preparation method thereof, and a display device. The preparation method of the display substrate comprises: forming a display area and a non-display area, wherein the non-display area comprises an opening area; forming a first barrier wall between the display area and the opening area, wherein the first barrier wall surrounds the opening area and comprises a first metal layer structure, wherein at least one side of the first metal layer structure surrounding the opening area is formed with a notch; after the first barrier wall is formed, forming a conductive layer pattern in the display area and on the first barrier wall; forming the conductive layer pattern comprises: forming a conductive material layer on the display area and the first barrier wall, wherein the conductive material layer is disconnected at the first barrier wall, and patterning the conductive material layer to form a conductive layer pattern. The display substrate combines a camera device with a display area, has a large screen-to-body ratio, and has good display effect and reliability.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a display substrate and a method for manufacturing the same, and a display device. Background Art

[0002] At present, the display screens of display devices are developing in the direction of large screens and full screens. Usually, display devices (such as mobile phones, tablet computers, etc.) have a camera device (or imaging device), which is usually arranged on a side outside the display area of ​​the display screen. However, since the installation of the camera device requires a certain position, it is not conducive to the full-screen and narrow-frame design of the display screen. For example, the camera device can be combined with the display area of ​​the display screen, and a position can be reserved for the camera device in the display area to maximize the display area of ​​the display screen. Summary of the invention

[0003] At least one embodiment of the present disclosure provides a method for preparing a display substrate, the method comprising: forming a display area and a non-display area, the display area at least partially surrounding the non-display area, the non-display area including an opening area, forming a first barrier wall between the display area and the opening area, wherein the first barrier wall surrounds the opening area and comprises a first metal layer structure, a recess is formed on at least one side of the first metal layer structure surrounding the opening area, after the first barrier wall is formed, forming a conductive layer pattern in the display area and on the first barrier wall, wherein forming the conductive layer pattern comprises: forming a conductive material layer on the display area and the first barrier wall, the conductive material layer being disconnected at the first barrier wall, and patterning the conductive material layer to form the conductive layer pattern.

[0004] For example, the preparation method provided by at least one embodiment of the present disclosure further includes: forming an opening at a position of the display substrate located in the opening area, and combining an image sensor and / or an infrared sensor in the opening area.

[0005] For example, in the preparation method provided in at least one embodiment of the present disclosure, composing the conductive material layer includes: forming a photoresist pattern on the conductive material layer, wherein the photoresist pattern covers at least one side of the first barrier wall, and etching the conductive material layer using the photoresist pattern as a mask to form the conductive layer pattern.

[0006] For example, the preparation method provided by at least one embodiment of the present disclosure also includes: forming a light-emitting device in the display area, wherein the light-emitting device includes a first electrode, a second electrode and an organic functional layer between the first electrode and the second electrode, and the conductive layer pattern includes the first electrode.

[0007] For example, in the preparation method provided in at least one embodiment of the present disclosure, the organic functional layer is disconnected at the first barrier wall, the first electrode is an anode, the second electrode is a cathode, and the cathode is also disconnected at the first barrier wall.

[0008] For example, the preparation method provided in at least one embodiment of the present disclosure further includes: forming a second metal pattern in the display area, wherein the second metal pattern includes a second metal layer structure, and the first metal layer structure and the second metal layer structure are formed using the same film layer.

[0009] For example, in the preparation method provided in at least one embodiment of the present disclosure, forming the first metal layer structure includes: forming a first metal material pattern on the base substrate, and etching the first metal material pattern with a first etching solution to form the recess.

[0010] For example, in the preparation method provided in at least one embodiment of the present disclosure, forming the first metal material pattern includes: forming a first sub-metal pattern and a second sub-metal pattern stacked in sequence on the base substrate, wherein the first etching solution has a greater etching rate for the first sub-metal pattern than for the second sub-metal pattern.

[0011] For example, in the preparation method provided in at least one embodiment of the present disclosure, forming the first metal material pattern includes: forming a third sub-metal pattern, a first sub-metal pattern, and a second sub-metal pattern stacked in sequence on the base substrate, wherein the first etching liquid has a higher etching rate for the first sub-metal pattern than for the second sub-metal pattern and the third sub-metal pattern.

[0012] For example, in the preparation method provided in at least one embodiment of the present disclosure, forming the first metal layer structure includes: forming a first metal material pattern, forming an insulating material layer in the display area and on the first metal material pattern, and using a second etching solution to compose the insulating material layer to form a patterned insulating layer.

[0013] For example, in the preparation method provided in at least one embodiment of the present disclosure, the second etching solution further etches the first metal material pattern to form the recess.

[0014] For example, in the preparation method provided in at least one embodiment of the present disclosure, the insulating material layer includes a photoresist material, and the second etching solution is a developer of the photoresist material.

[0015] For example, in the preparation method provided in at least one embodiment of the present disclosure, the developer includes tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, alkyl alcohol amine, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium phosphate, sodium dihydrogen phosphate or sodium acetate.

[0016] For example, in the preparation method provided by at least one embodiment of the present disclosure, when the developer includes tetramethylammonium hydroxide, the concentration of the tetramethylammonium hydroxide in the developer is 2-8%, and the time for the developer to etch the first metal material pattern to form the recess is 60s-200s.

[0017] For example, in the preparation method provided in at least one embodiment of the present disclosure, forming the first metal material pattern includes: forming a first sub-metal pattern and a second sub-metal pattern stacked in sequence on the base substrate, wherein the etching rate of the second etching solution on the first sub-metal pattern is greater than the etching rate on the second sub-metal pattern.

[0018] For example, in the preparation method provided in at least one embodiment of the present disclosure, forming the first metal material pattern includes: forming a third sub-metal pattern, a first sub-metal pattern, and a second sub-metal pattern stacked in sequence on the base substrate, wherein the etching rate of the second etching solution on the first sub-metal pattern is greater than the etching rate of the second sub-metal pattern and the third sub-metal pattern.

[0019] For example, in the manufacturing method provided by at least one embodiment of the present disclosure, the material of the first sub-metal pattern includes aluminum or copper, and the material of the second sub-metal pattern includes titanium or molybdenum.

[0020] For example, in the preparation method provided by at least one embodiment of the present disclosure, the material of the first sub-metal pattern includes aluminum or copper, the material of the second sub-metal pattern includes titanium or molybdenum, and the material of the third sub-metal pattern includes titanium or molybdenum.

[0021] For example, the preparation method provided by at least one embodiment of the present disclosure also includes: forming a second barrier wall between the display area and the non-display area, wherein the second barrier wall surrounds the non-display area and is formed on a side of the first barrier wall away from the non-display area, and the second barrier wall and the first barrier wall are formed using the same film layer.

[0022] At least one embodiment of the present disclosure also provides a display substrate, which includes: a display area, a non-display area and a first barrier wall between the display area and the non-display area, the display area at least partially surrounds the non-display area, the non-display area includes an opening area, the first barrier wall surrounds the opening area and includes a first metal layer structure, a recess is formed on at least one side of the first metal layer structure surrounding the opening area, the display area includes a conductive layer pattern, wherein the conductive layer pattern also extends to the first barrier wall and is disconnected at the at least one side of the first barrier wall.

[0023] For example, the display substrate provided by at least one embodiment of the present disclosure further includes an opening located in the opening area and an image sensor and / or an infrared sensor combined with the opening area.

[0024] For example, the display substrate provided in at least one embodiment of the present disclosure further includes a light-emitting device in the display area, the light-emitting device includes a first electrode, a second electrode and an organic functional layer between the first electrode and the second electrode, and the conductive layer pattern includes the first electrode.

[0025] For example, in the display substrate provided in at least one embodiment of the present disclosure, the organic functional layer is disconnected at the first barrier wall, the first electrode is an anode, the second electrode is a cathode, and the cathode is also disconnected at the first barrier wall.

[0026] At least one embodiment of the present disclosure further provides a display device, including a display substrate formed by the above-mentioned preparation method, or including the above-mentioned display substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, but are not intended to limit the present disclosure.

[0028] Figure 1A is a schematic plan view of a display substrate;

[0029] Figure 1B for Figure 1A A schematic cross-sectional view of a display substrate along line AA;

[0030] Figure 2A A schematic plan view of a display substrate provided in at least one embodiment of the present disclosure;

[0031] Figure 2B for Figure 2A A schematic cross-sectional view of the display substrate along line BB;

[0032] Figure 3A A schematic cross-sectional view of a first barrier wall in a display substrate provided in at least one embodiment of the present disclosure;

[0033] Figure 3B Another cross-sectional schematic diagram of a first barrier wall in a display substrate provided in at least one embodiment of the present disclosure;

[0034] Figure 4A A schematic plan view of another display substrate provided for at least one embodiment of the present disclosure;

[0035] Figure 4B for Figure 4AA schematic cross-sectional view of the display substrate along line BB;

[0036] Figure 5A-5B A schematic plan view of a display substrate during preparation provided by at least one embodiment of the present disclosure;

[0037] Figures 6A-6G A schematic cross-sectional view of a display substrate during preparation provided by at least one embodiment of the present disclosure;

[0038] Figure 7A-7B A schematic cross-sectional view of a display substrate during preparation provided by at least one embodiment of the present disclosure;

[0039] Fig. 8A is a scanning electron microscope image showing metal particles formed in a substrate;

[0040] Figure 8B for Fig. 8A The SEM image shown shows the functional layer above the metal particles in the substrate. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0042] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0043] In order to maximize the display area of ​​the display device, the camera device (imaging device) of the display device can be integrated with the display area and the camera device can be arranged in the display area.

[0044] For example, Figure 1A shows a schematic plan view of a display substrate for a display device, Figure 1B for Figure 1A Schematic cross-sectional view of the display substrate along line AA.

[0045] like Figure 1A As shown, the display substrate 100 includes a display area 101, the display area 101 includes a pixel array and has an opening 1011 in the pixel array, the opening 1011 is a reserved position for a camera device (not shown), the camera device can be arranged on the back side of the display substrate 100 opposite to the display side and, for example, overlapped with the opening 1011, so that the camera device can acquire an image through the opening 1011. Thus, the camera device is integrated with the display area 101 of the display substrate 100.

[0046] The display area 101 has a light-emitting device for display, for example, the light-emitting device is an organic light-emitting diode. The organic functional layer 103 (for example, an electron transport layer, a light-emitting layer or a hole transport layer, etc.) and the electrode layer 104 of the plurality of light-emitting devices in all or part of the display area 101 are usually formed as a whole surface in the display area 101. Therefore, when the encapsulation layer 105 is used for encapsulation, the area near the opening 1011 is often difficult to be encapsulated, or even if it is encapsulated, it is difficult to ensure the encapsulation effect of the area. In this case, if Figure 1B As shown, impurities such as water and oxygen may enter the display area 101 through the opening 1011 along the entire surface of the organic functional layer 103 and the electrode layer 104, contaminating the functional materials in the display area 101, causing the performance of these functional materials to degrade, thereby affecting the display effect of the display area 101.

[0047] For example, a barrier wall may be provided around the opening 1011 to separate the organic functional layer 103 and the electrode layer 104 formed on the entire surface, thereby preventing impurities such as water and oxygen from entering the display area 101 through the opening 1011. However, the form of the barrier wall may sometimes affect the structure of the display substrate and the display effect.

[0048] At least one embodiment of the present disclosure provides a method for preparing a display substrate, which can form the above-mentioned barrier wall, and the formation of the barrier wall will not affect other structures of the display substrate, so as to ensure the integrity of the display substrate structure and thereby improve the reliability of the display substrate.

[0049] The manufacturing method of the display substrate includes: forming a display area and a non-display area, wherein the display area at least partially surrounds the non-display area, and the non-display area includes an opening area; forming a first barrier wall between the display area and the opening area, wherein the first barrier wall surrounds the opening area and includes a first metal layer structure, and at least one side of the first metal layer structure surrounding the opening area is formed with a notch; after the first barrier wall is formed, forming a conductive layer pattern in the display area and on the first barrier wall. Forming the conductive layer pattern includes: forming a conductive material layer on the display area and the first barrier wall, wherein the conductive material layer is disconnected at the first barrier wall, and patterning the conductive material layer to form the conductive layer pattern.

[0050] At least one embodiment of the present disclosure provides a display substrate, which includes a display area and a non-display area, wherein the display area at least partially surrounds the non-display area, and the non-display area includes an opening area. The display substrate also includes a first barrier wall between the display area and the opening area, the first barrier wall surrounds the opening area and includes a first metal layer structure, at least one side of the first metal layer structure surrounding the opening area is formed with a recess, and the display area includes a conductive layer pattern, which extends to the first barrier wall and is disconnected at the at least one side of the first barrier wall.

[0051] At least one embodiment of the present disclosure provides a display device, including a display substrate formed by the above-mentioned preparation method, or including the above-mentioned display substrate.

[0052] The display substrate and the preparation method thereof, and the display device of some embodiments of the present disclosure are described below through several specific embodiments.

[0053] At least one embodiment of the present disclosure provides a display substrate. Figure 2A shows a schematic plan view of the display substrate, Figure 2B for Figure 2A A schematic cross-sectional view of the display substrate along line BB in FIG.

[0054] The display substrate 200 includes a display area 21 and a non-display area 22, wherein the display area 21 at least partially surrounds the non-display area 22, and the non-display area 22 includes an opening area 222. The display substrate 200 also includes a first barrier wall 23 between the display area 21 and the opening area 222. At this time, the first barrier wall 23 is arranged in the non-display area 22 between the display area 21 and the opening area 222. The first barrier wall 23 surrounds the opening area 222, and the first barrier wall 23 includes a first metal layer structure, and a notch 231 is formed on at least one side of the first metal layer structure surrounding the opening area 222. The display area 21 includes a conductive layer pattern 218, and the conductive layer pattern 218 also extends onto the first barrier wall 23, for example, a material 2180 of the conductive layer pattern 218 also extends onto the first barrier wall 23 to cover the first barrier wall 23, and is disconnected at at least one side of the first barrier wall 23. For example, the partial material 2180 covering the first barrier wall 23 and disconnected at at least one side of the first barrier wall 23 and the partial material 2180 in the display area 22 are formed together when the conductive layer pattern 218 is formed by a patterning process using the same conductive material layer.

[0055] For example, in Figure 2B In the first metal layer structure shown, the side of the first metal layer structure facing the opening area 222 and the side facing away from the opening area 222 both have a notch 231, so that the material 2180 used for the conductive layer pattern 218 is disconnected at both sides of the first barrier wall 23. For example, in other embodiments, the first barrier wall 23 may also have the notch 231 only on one side of the first metal layer structure, as long as the first barrier wall 23 can achieve the technical effect of disconnecting the functional layer formed thereon.

[0056] For example, Figure 2B As shown, the display substrate 200 also includes a base substrate 201. For example, the opening direction of the recess 231 in the first metal layer structure of the first barrier wall 23 is parallel to the plane (i.e., the plate surface) where the base substrate 201 is located. Figure 2B In the embodiment, the base substrate 201 is placed in the horizontal direction, and the opening direction of the recess 231 is in the horizontal direction. For example, the depth of the recess 231, that is, the distance of the recess 231 in the direction parallel to the base substrate 201 into the side of the first metal layer structure, can be 0.6 μm-1 μm, such as 0.6 μm, 0.7 μm or 0.8 μm.

[0057] For example, the display substrate 200 further includes an opening 221 located in the opening area 222. The opening 221 allows the display side ( Figure 2B The light from the upper side of the display substrate 200 is transmitted through the display substrate 200 to reach the back side of the display substrate 200 ( Figure 2B ).

[0058] For example, in some embodiments, the display substrate 20 further includes an image sensor 210 and / or an infrared sensor 210 combined with the opening area 222. For example, the image sensor 210 and / or the infrared sensor 210 are combined on the back side of the display substrate 200, and the orthographic projection on the display substrate 200 overlaps at least partially with the opening 221. For example, the image sensor 210 and / or the infrared sensor 210 can realize functions such as image acquisition, face recognition, and infrared sensing through the opening 221. Thus, the display substrate 200 integrates the image sensor 210 and / or the infrared sensor 210 with the display area 21, which can improve the screen ratio of the display area 21.

[0059] For example, the display area 21 includes a pixel array for performing display operations, the pixel array includes a plurality of pixel units arranged in an array, and the pixel units include a driving circuit, a light-emitting device, etc. For example, the light-emitting device includes a first electrode 218A, a second electrode 204, and an organic functional layer between the first electrode 218A and the second electrode 204. For example, the conductive layer pattern 218 includes the first electrode 218A. The organic functional layer includes, for example, a light-emitting material layer 202 and an auxiliary light-emitting layer 203, and the auxiliary light-emitting layer 203 is, for example, an electron transport layer, an electron injection layer, a hole transport layer, a hole injection layer, and other functional layers that can improve the light-emitting efficiency or light-emitting effect of the light-emitting material layer 202. At least part of the organic functional layer of the light-emitting device for multiple pixel units, such as the auxiliary light-emitting layer 203, and the second electrode 204 of the light-emitting device are generally formed as a whole surface, and at this time, the organic functional layer can be disconnected on the side of the first barrier wall 23 having the notch 231.

[0060] For example, the first electrode 218A is an anode (for example, a pixel electrode itself or an electrode electrically connected to the pixel electrode), the second electrode 204 is a cathode layer, and the cathode is also disconnected on the side of the first barrier wall 23 having the notch 231. Therefore, when the organic functional layer and the second electrode 204 located on the side close to the opening 221 are contaminated by impurities such as water and oxygen, since the organic functional layer and the second electrode 204 are separated by the first barrier wall 23, these contaminating impurities will not extend to the part of the organic functional layer and the second electrode 204 used for the light-emitting device to emit light. For example, part of the organic functional layer and part of the second electrode 204 are also formed on the top of the first barrier wall 23, but these parts are separated from other parts, so that no transmission channel for impurities such as water and oxygen is formed.

[0061] For example, the driving circuit included in the pixel unit includes structures such as a thin film transistor and a capacitor. For example, the thin film transistor includes a second metal pattern, and the second metal pattern includes a second metal layer structure, and the first metal layer structure and the second metal layer structure have the same structure and have the same material. For example, the first metal layer structure and the second metal layer structure can be formed in the same layer in the preparation process and have the same multilayer structure, and in the first metal layer structure and the second metal multilayer structure, the materials of the corresponding layers are the same, so that the first metal layer structure and the second metal layer structure can be formed by the same film layer.

[0062] For example, Figure 2B As shown, the thin film transistor includes a gate 211, a source and a drain 212 and other structures, and the capacitor includes a first electrode 213, a second electrode 214 and a first insulating layer 215 between the first electrode 213 and the second electrode 214. For example, the gate 211 or the source and drain 212 can be implemented as a second metal pattern having a second metal layer structure.

[0063] For example, Figure 2B 2 shows that the source and drain electrodes 212 include a second metal layer structure. At this time, the first metal layer structure of the first barrier wall 23 and the second metal layer structure of the source and drain electrodes 212 have the same structure and include the same material. For example, the first metal layer structure of the first barrier wall 23 and the second metal layer structure of the source and drain electrodes 212 are formed in the same layer and have the same multilayer structure. Therefore, during the preparation process of the display substrate 200, the first metal layer structure of the first barrier wall 23 and the second metal layer structure of the source and drain electrodes 212 can be formed using the same film layer. For example, in some examples, the first metal layer structure and the second metal layer structure both have a multilayer structure such as a double-layer structure or a triple-layer structure.

[0064] For example, in one example, Figure 3A As shown, the first metal layer structure of the first barrier wall 23 includes a three-layer metal layer structure, that is, a first sub-metal pattern 232, a second sub-metal pattern 233, and a third sub-metal pattern 234 are sequentially stacked on the base substrate 201. The orthographic projection of the first sub-metal pattern 232 on the base substrate 201 is located within the orthographic projection of the second sub-metal pattern 233 on the base substrate 201, and the orthographic projection of the first sub-metal pattern 232 on the base substrate 201 is also located within the orthographic projection of the third sub-metal pattern 234 on the base substrate 201, thereby forming a notch 231 on the side of the stack of the three.

[0065] For example, in one example, Figure 3BAs shown, the first metal layer structure of the first barrier wall 23 includes a double-layer metal layer structure, that is, a first sub-metal pattern 232 and a second sub-metal pattern 233 are sequentially stacked on the base substrate 201. The orthographic projection of the first sub-metal pattern 232 on the base substrate 201 is located within the orthographic projection of the second sub-metal pattern 233 on the base substrate 201, thereby forming a notch 231 on the side of the stack of the two.

[0066] In the above case, when the organic functional layer and the second electrode 204 are formed on the base substrate 201 having the first barrier wall 23, the organic functional layer and the second electrode 204 can be disconnected at the recess 231 of the first barrier wall 23, thereby disconnecting the route for impurities such as water and oxygen to enter the display area 21.

[0067] For example, Figure 2B The display substrate shown in the figure has a first barrier wall 23 with the above-mentioned three-layer metal layer structure. At this time, the second metal layer structure of the source and drain 212 includes a metal sublayer 2123 on the same layer as the third sub-metal pattern 234, a metal sublayer 2121 on the same layer as the first sub-metal pattern 232, and a metal sublayer 2122 on the same layer as the second sub-metal pattern 233.

[0068] For example, in the first metal layer structure of the first barrier wall 23, the thickness of the first sub-metal pattern 232 is greater than the thickness of the second sub-metal pattern 233 and the thickness of the third sub-metal pattern 234, so that it is easier to form the recess 231 and more conducive to disconnecting the organic functional layer and the second electrode 204 at the first barrier wall 23, so that the first barrier wall 23 can achieve a better barrier effect.

[0069] For example, in some embodiments of the present disclosure, the material of the first sub-metal pattern 232 and the material of the second sub-metal pattern 233 have different etching rates during etching, and in the case where the first metal layer structure has the third sub-metal pattern 234, the material of the third sub-metal pattern 234 can be the same as the material of the second sub-metal pattern 233. For example, under the action of an etching solution used to etch and form the first metal layer structure, the material of the first sub-metal pattern 232 is etched at a faster rate than the material of the second sub-metal pattern 233, so that the first metal layer structure with the notch 231 is easily formed during preparation.

[0070] For example, in some embodiments, the material of the first sub-metal pattern 232 includes metals such as aluminum or copper or their alloys, the material of the second sub-metal pattern 233 includes metals such as titanium or molybdenum or their alloys, and the material of the third sub-metal pattern 234 is the same as the material of the second sub-metal pattern 233, including metals such as titanium or molybdenum or their alloys.

[0071] For example, in some examples, when the first metal layer structure adopts a double-layer structure, the material combination of the first sub-metal pattern 232 and the second sub-metal pattern 233 may be aluminum / titanium, aluminum / molybdenum, copper / titanium, or copper / molybdenum, etc. When the first metal layer structure adopts a three-layer structure, the material combination of the third sub-metal pattern 234, the first sub-metal pattern 232, and the second sub-metal pattern 233 may be titanium / aluminum / titanium, molybdenum / aluminum / molybdenum, titanium / copper / titanium, or molybdenum / copper / molybdenum, etc.

[0072] It should be noted that in some examples of this embodiment, the display substrate 200 may also include a second insulating layer 216 covering the capacitor, a flat layer 217 for flattening the driving circuit, a pixel defining layer 219 for defining the pixel array, a columnar spacer 208 for forming a packaging space, a packaging layer 205 for sealing, and a second packaging layer 206 and a third packaging layer 207 for further improving the packaging effect, and the embodiments of the present disclosure will not be repeated. In the example of this embodiment, since one of the source and drain electrodes 212 of the thin film transistor is connected to the first electrode 218A, the thin film transistor can be a driving transistor, that is, the magnitude of the light-emitting current flowing through the light-emitting device is controlled according to the applied data signal, thereby controlling the gray scale of the pixel unit during the display process.

[0073] In some embodiments of the present disclosure, for example, more than one barrier wall may be arranged around the opening area 2011 of the display panel, that is, multiple barrier walls may be included, such as two, three, four, five, etc. arranged in parallel, to enhance the barrier effect.

[0074] For example, Figure 4A and Figure 4B The display substrate 200 shown includes two barrier walls. Figure 3A and Figure 3B The difference of the display substrate shown is that, in addition to the first barrier wall 23, the display substrate also includes a second barrier wall 24. The second barrier wall 24 surrounds the opening area 222, and the second barrier wall 24 is arranged on a side of the first barrier wall 23 far from the opening area 222, and is spaced a certain distance apart. The second barrier wall 24 also includes a first metal layer structure, and at least one side of the first metal layer structure of the second barrier wall 24 surrounding the opening area 222 has a notch 241. Therefore, the first barrier wall 23 and the second barrier wall 24 can be formed by using the same film layer in the preparation process. Figure 4A and Figure 4B The other structures of the display substrate 200 shown may refer to the above embodiments and will not be described in detail here.

[0075] At least one embodiment of the present disclosure also provides a method for preparing a display substrate, the method comprising: forming a display area and a non-display area, the display area at least partially surrounding the non-display area, the non-display area including an opening area, forming a first barrier wall between the display area and the opening area, the first barrier wall surrounding the opening area and including a first metal layer structure, at least one side of the first metal layer structure surrounding the opening area is formed with a notch; after the first barrier wall is formed, forming a conductive layer pattern in the display area and on the first barrier wall. Forming the conductive layer pattern comprises: forming a conductive material layer on the display area and the first barrier wall, the conductive material layer being disconnected at the first barrier wall, and patterning the conductive material layer to form the conductive layer pattern.

[0076] By forming a conductive layer pattern after the first barrier wall, the preparation method can ensure that the preparation process for forming the conductive layer pattern, such as the etching process, will not further etch the first barrier wall, and thus will not affect other structures of the display substrate, thereby ensuring the integrity of the display substrate structure and improving the reliability of the display substrate.

[0077] For example, in some preparation processes, if the etching solution used to etch the conductive layer pattern also etches the first barrier wall, since the etching solution contains some metal ions, such as silver ions, the metal ions may undergo a substitution reaction with the metal material (such as a single substance or an alloy) included in the first barrier wall, such as aluminum, to generate metallic silver, which will exist in the form of particles on the display substrate, such as on the conductive layer pattern, thereby affecting the integrity of the functional layer formed thereafter. For example, when a luminescent material is formed after the conductive layer pattern, the luminescent material is easily disconnected at the metallic silver particles, making the luminescent material discontinuous, thereby causing the display substrate to form dark spots and other defects when displaying. For example, Fig. 8A A scanning electron microscope image of metal particles, such as silver particles (circled in the figure), formed in a display substrate is shown. Figure 8B for Fig. 8A The scanning electron microscope image of the functional layer above the metal particles in the display substrate shown in the figure shows that when metal particles are formed on the display substrate due to the above reasons, the metal particles will seriously affect the integrity of the functional layer formed later, resulting in poor display. The above preparation process provided by the embodiment of the present disclosure can avoid such adverse effects and improve the display quality and reliability of the display substrate.

[0078] For example, in some embodiments, the preparation method may further include: forming an opening at a position of the display substrate located in the opening area. The opening is used to combine image sensors and / or infrared sensors and other devices with image acquisition, face recognition, infrared sensing and other functions.

[0079] For example, in some embodiments, the preparation method may further include: combining an image sensor and / or an infrared sensor with the opening area. Thus, the image sensor and / or the infrared sensor are integrated with the display area, which can increase the screen-to-body ratio of the display area.

[0080] Below, to form Figure 2A and Figure 2B Taking the display substrate 200 as an example, the method for preparing the display substrate provided by the embodiment of the present disclosure is described in detail.

[0081] like Figure 5A As shown, a display area 21 and a non-display area 22 are first formed, and the non-display area 22 includes an opening area 222 .

[0082] like Figure 6A-6G As shown, forming the display area 21 includes forming light emitting devices for the pixel array and driving circuits for driving the light emitting devices. The embodiments of the present disclosure do not limit the specific structures and preparation methods of the light emitting devices of the pixel array and the driving circuits for driving the light emitting devices.

[0083] For example, Fig. 6A As shown, a driving circuit layer is first formed on the base substrate 201, including thin film transistors and storage capacitors located in the display area 21. For example, a patterning process can be used to sequentially form various functional film layers of structures such as thin film transistors and storage capacitors on the base substrate 201. For example, a patterning process includes processes such as formation of photoresist, exposure, development, and etching.

[0084] For example, in some embodiments, forming the display area 21 includes forming a second metal pattern, for example, forming a thin film transistor in the display area 21 includes forming a second metal pattern, the second metal pattern includes a second metal layer structure, and the first metal layer structure and the second metal layer structure are formed using the same film layer, thereby simplifying the preparation process. For example, the first metal layer structure and the second metal layer structure can be a double-layer structure or a three-layer structure, etc., and the specific structure and materials can refer to the above embodiments, which will not be repeated here.

[0085] For example, in some embodiments, forming the first metal layer structure includes: forming a first metal material pattern on the base substrate, and etching the first metal material pattern with a first etching solution to form a recess.

[0086] For example, in the case where the first metal layer structure includes a double-layer structure, forming the first metal material pattern includes: forming a first sub-metal pattern and a second sub-metal pattern stacked in sequence on the base substrate, and at this time, the first etching liquid has a higher etching speed for the first sub-metal pattern than for the second sub-metal pattern.

[0087] For example, in the case where the first metal layer structure includes a three-layer structure, forming the first metal material pattern includes: forming a third sub-metal pattern, a first sub-metal pattern, and a second sub-metal pattern stacked in sequence on the base substrate, and at this time, the first etching liquid has a greater etching speed for the first sub-metal pattern than for the second sub-metal pattern and the third sub-metal pattern.

[0088] For example, Fig. 6A As shown, the gate 211 of the thin film transistor and the first electrode 213 of the storage capacitor are formed using the same film layer and the same patterning process to simplify the manufacturing process. For example, the gate 211 and the first electrode 213 of the storage capacitor include metal or alloy materials such as aluminum, titanium, and cobalt. During the preparation, a gate material layer is first formed by sputtering or evaporation, and then the gate material layer is patterned to form a patterned gate 211 and the first electrode 213 of the storage capacitor.

[0089] For example, the source and drain electrodes 212 of the thin film transistor may be formed into a multi-layer structure, for example, a three-layer structure as shown in the figure. In this case, the source and drain electrodes 212 are implemented as the second metal pattern.

[0090] For example, three metal material layers, such as a titanium material layer, an aluminum material layer, and a titanium material layer, may be formed in sequence by sputtering or evaporation, and then the three metal material layers may be patterned by the same patterning process, thereby forming a titanium 2121 / aluminum 2122 / titanium 2123 three-layer electrode structure constituting the source and drain 212, and at the same time forming a first metal material pattern 2310, i.e., an initial first barrier wall for forming a first barrier wall, and the first metal material pattern 2310 surrounds the opening area. Fig. 6A In the example shown, the first metal material pattern 2310 includes a third sub-metal pattern 234, a first sub-metal pattern 232, and a second sub-metal pattern 233 stacked sequentially on the base substrate 201. For example, the etching method used in the above-mentioned patterning process can be dry etching, so that the formed source and drain electrodes 212 and the side surfaces of the first metal material pattern 2310 have a flush structure.

[0091] like Figure 6B As shown, after the above process, a planar layer 217 is formed. For example, the planar layer 217 can be formed by a patterning process using an organic material such as a resin material or an inorganic material such as silicon nitride or silicon oxide. For example, the formed planar layer 217 covers the source and drain electrodes 212, and the planar layer 217 has a via hole exposing the source and drain electrodes 212, so that the first electrode 218A formed later is connected to the source and drain electrodes 212 through the via hole.

[0092] For example, after the planar layer 217 is formed, the first metal material pattern 2310 is etched with a first etching solution to form a notch 231. For example, when the first metal layer structure includes a three-layer structure, the first etching solution has a higher etching speed for the first sub-metal pattern 232 than for the second sub-metal pattern 233 and the third sub-metal pattern 231, thereby forming the notch 231. Furthermore, since the source and drain electrodes 212 are covered by the planar layer 217, the source and drain electrodes 212 will not be further etched.

[0093] like Figure 6C-6E As shown, after the first barrier wall 23 is formed, a light emitting device is formed, and the light emitting device includes a first electrode, a second electrode and an organic functional layer between the first electrode and the second electrode. For example, the organic functional layer may include a light emitting material layer and an auxiliary light emitting layer.

[0094] For example, the first electrode 218A is formed first, and the first electrode 218A is implemented as the above-mentioned conductive layer pattern. Figure 6C As shown, forming the first electrode 218A includes: forming a conductive material layer 2180 on the display area 21 and the first blocking wall 23, the conductive material layer 2180 is disconnected at the first blocking wall 23, and then composing the conductive material layer 2180 to form a conductive layer pattern, which includes the first electrode 218A.

[0095] like Fig.6D and 6E As shown, patterning the conductive material layer 2180 includes: forming a photoresist pattern on the conductive material layer 2180, for example, the photoresist pattern includes a first portion 251 and a second portion 252, the first portion 251 is used to form the first electrode 218A in the display area 21, and the second portion 252 covers at least one side of the first barrier wall 23 to protect the first barrier wall 23 from being etched. Then, the conductive material layer 2180 is etched using the photoresist pattern as a mask to form a conductive layer pattern 218, the conductive layer pattern 218 includes the first electrode 218A, and at this time, the conductive layer pattern 218 also includes a portion of the material 2180 covering the first barrier wall 23 and disconnected by the first barrier wall 23.

[0096] For example, the first electrode 218A is an anode, and the conductive material layer 2180 includes metal oxides such as ITO and IZO or metals such as Ag, Al, Mo or their alloys. For example, the first electrode 218A is connected to the source and drain electrodes 212 through vias in the planar layer 217 .

[0097] In the above-mentioned etching process for forming the first electrode 218A, the etching solution used will not etch the first metal material pattern 2310, thereby preventing the etching solution from reacting with the metal material included in the first metal material pattern 2310 to generate metal particles, thereby preventing the metal particles from affecting the integrity of other functional layers formed thereafter, thereby improving the reliability of the display substrate.

[0098] like Fig. 6F As shown, after the conductive layer pattern 218 is formed, a pixel defining layer 219 is formed, and an organic functional layer is formed in the opening of the pixel defining layer 219, including a light-emitting material layer 202 and an auxiliary light-emitting layer 203, etc.

[0099] For example, a pixel defining layer 219 exposing the first electrode 218A is formed on the first electrode 218A by a patterning process. For example, the material of the pixel defining layer 219 includes an organic material such as a resin material or an inorganic material such as silicon nitride or silicon oxide, and the formed pixel defining layer 219 has an opening so that an organic functional layer of the light-emitting device and the second electrode 204 can be formed later.

[0100] For example, the light emitting material layer 202 may be formed in the opening of the pixel defining layer 219 by inkjet printing or evaporation. Then, as shown in FIG13C , a columnar spacer 208, an auxiliary light emitting layer 203 and a second electrode 204 are formed on the pixel defining layer 219 with the light emitting material layer 202 formed thereon.

[0101] For example, the columnar spacers 208 can be formed by a patterning process using organic materials such as resin materials or inorganic materials such as silicon nitride and silicon oxide. The columnar spacers 2026 are used to form a packaging space to facilitate the subsequent formation of a packaging layer.

[0102] For example, the auxiliary light-emitting layer 203 and the second electrode layer 204 are formed into a whole surface by evaporation, deposition or inkjet printing. The light-emitting material layer 202 includes a light-emitting material that can emit red, green, or blue light, and the auxiliary light-emitting layer 203 can be, for example, an electron injection layer or an electron transport layer. The second electrode 204 is, for example, a cathode, and the material of the second electrode 204 includes, for example, metals such as Mg, Ca, Li or Al or their alloys, or metal oxides such as IZO and ZTO, or organic materials with conductive properties such as PEDOT / PSS (poly 3,4-ethylenedioxythiophene / polystyrene sulfonate). At this time, the organic functional layer and the second electrode 204 formed into a whole surface are disconnected on the side of the first barrier wall 23 having the notch 231. In the figure, both sides of the first barrier wall 23 have notches, so the organic functional layer and the second electrode 204 are completely isolated on both sides of the first barrier wall 23.

[0103] Therefore, when the organic functional layer and the second electrode 204 are contaminated in the first barrier wall 23 near the opening area, due to the barrier effect of the first barrier wall 23, impurities such as water and oxygen will not diffuse and extend to the organic functional layer and the second electrode 204 for emitting light.

[0104] For example, after the light-emitting device is prepared, a packaging layer 205 can be formed on the second electrode 204 by chemical vapor deposition, physical vapor deposition, coating, etc. The packaging layer 205 can provide packaging and protection for the functional structure located in the display area. For example, a second packaging layer 206 and a third packaging layer 207 can also be formed on the packaging layer 205. The second packaging layer 206 can planarize the packaging layer 205, and the third packaging layer 207 can form an outer packaging layer. For example, the packaging layer 205 and the third packaging layer 207 are made of inorganic materials, such as silicon nitride, silicon oxide, silicon oxynitride, etc., and the second packaging layer 206 is made of organic materials, such as polyimide (PI), epoxy resin, etc. Thus, the packaging layer 205, the second packaging layer 206 and the third packaging layer 207 are formed into a composite packaging layer, which forms multiple protections for the functional structure of the display area and has a better packaging effect.

[0105] In some embodiments of the present disclosure, other necessary functional film layers may be formed in the display area 201 as needed. These film layers may be formed by conventional methods, which will not be described in detail herein.

[0106] For example, after the display area is formed, Figure 5B As shown, an opening 221 is formed in the opening area 222. For example, the display substrate 200 is opened by laser cutting or mechanical punching to form the opening 221.

[0107] For example, the opening 221 penetrates the base substrate 201 and the functional layer thereon, so an opening is also formed on the base substrate 201. The opening position can be installed with structures such as image sensors and infrared sensors, and connected with signals such as a central processing unit. For example, the image sensor or infrared sensor can be arranged on a side of the base substrate 201 away from the light-emitting structure (i.e., the non-display side of the display substrate), and can realize multiple functions such as taking pictures, facial recognition, infrared sensing, etc. through the opening 221.

[0108] It should be noted that in the embodiments of the present disclosure, the thin film transistor shown is a top-gate type, but the embodiments of the present disclosure are not limited to this, for example, the thin film transistor may also be a bottom-gate type. For example, the driving circuit may include a plurality of thin film transistors, and these thin film transistors may be a top-gate type or a bottom-gate type, and may be an N-type or a P-type, and the embodiments of the present disclosure are not limited to this.

[0109] In some embodiments of the present disclosure, the light-emitting device is an organic light-emitting diode or a quantum dot light-emitting diode, for example, the organic light-emitting diode may be a top-gate emission type, a bottom-emission type or a double-sided emission type, and the organic functional layer of the organic light-emitting diode may be a composite layer, which includes an organic light-emitting material layer and other auxiliary light-emitting layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer. The embodiments of the present disclosure do not limit the specific structure and type of the organic light-emitting diode.

[0110] For example, the preparation method of some embodiments of the present disclosure can also form Figure 4A and 4B The display substrate shown in the figure is different from the above example in that, in forming Figure 4A and 4B In the display substrate shown in the figure, a second barrier wall is also formed between the display area and the opening area of ​​the display substrate. The second barrier wall surrounds the opening area and is formed on the side of the first barrier wall far away from the opening area. At this time, the second barrier wall can be formed by the same film layer as the first barrier wall, so that the formed multi-layer barrier wall can play a better barrier role without increasing the process steps.

[0111] For example, in other embodiments of the present disclosure, other methods may be used to form the first metal layer structure of the first barrier wall. For example, forming the first metal layer structure includes: forming a first metal material pattern. The method for forming the first metal material pattern can refer to the method described in the above embodiments. Fig. 6A After the first metal material pattern 2310 is formed, Fig. 7A and Figure 7B As shown, an insulating material layer 2170 is formed in the display area and on the first metal material pattern 2310 , and then the insulating material layer 2170 is patterned using a second etching solution to form a patterned insulating layer 217 .

[0112] For example, the second etching solution can also etch the first metal material pattern 2310 to form the notch 231. Thus, the insulating layer 217 and the first barrier wall 23 can be formed by the same etching solution, thereby simplifying the manufacturing process of the display substrate.

[0113] For example, when the first metal layer structure includes a double-layer structure, forming the first metal material pattern includes forming a first sub-metal pattern and a second sub-metal pattern stacked sequentially on the substrate. Figure 3B At this time, the etching speed of the second etching solution on the first sub-metal pattern 232 is greater than the etching speed on the second sub-metal pattern 233, thereby facilitating the formation of the notch 231.

[0114] For example, when the first metal layer structure includes a three-layer structure, forming the first metal material pattern includes forming a third sub-metal pattern, a first sub-metal pattern and a second sub-metal pattern stacked sequentially on the substrate. Figure 3A At this time, the etching speed of the second etching solution on the first sub-metal pattern 232 is greater than the etching speed on the second sub-metal pattern 233 and the third sub-metal pattern 234 .

[0115] For example, in some examples, the insulating material layer includes a photoresist material, such as a photoresist material such as polyimide. In this case, the second etching solution can be a developer of the photoresist material. The developer is not only used to develop the exposed photoresist material (i.e., the photoresist layer) to obtain a photoresist pattern, but also has an etching effect on the first metal material pattern 2310, for example, different etching rates are provided for different sub-metal patterns, so as to form a recess 231 of the first metal layer structure. The obtained photoresist pattern can also be used for subsequent patterning processes, etc.

[0116] For example, the developer includes reagents that can simultaneously have the above-mentioned etching effect on the photoresist material of the insulating material layer and the first metal material pattern 2310, such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, alkyl alcohol amine, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium phosphate, sodium dihydrogen phosphate or sodium acetate. For example, these reagents have different etching rates for different sub-metal patterns in the first metal material pattern 2310, for example, the etching rate for the first sub-metal pattern 232 is greater than the etching rate for the second sub-metal pattern 233 and the third sub-metal pattern 234, so as to form the recess 231 of the first metal layer structure. For example, in addition to the above-mentioned reagents, the developer also includes some other solvents or additives, such as water and surfactants, etc., which are not limited in the embodiments of the present disclosure.

[0117] For example, in some examples, when the developer includes tetramethylammonium hydroxide, the concentration of tetramethylammonium hydroxide in the developer is 2-8%, and the developer etches the first metal material pattern 2310 to form the recess 231 for 60 seconds (s) to 200 seconds (s). At this time, the depth of the recess, that is, the distance of the recess 231 penetrating into the side of the first metal layer structure in a direction parallel to the base substrate 201, is, for example, 0.6 μm to 1 μm. As a result, the first metal layer structure of the first barrier wall can fully achieve a barrier effect.

[0118] For example, in some examples, when the concentration of methylammonium hydroxide is 2.5%, the time for the developer to etch the first metal material pattern 2310 to form the recess 231 is 180 seconds; when the concentration of methylammonium hydroxide is 7%, the time for the developer to etch the first metal material pattern 2310 to form the recess 231 is 60 seconds; when the concentration of methylammonium hydroxide is 5%, the time for the developer to etch the first metal material pattern 2310 to form the recess 231 is 120 seconds, etc. The concentration of methylammonium hydroxide and the time for the developer to etch the first metal material pattern 2310 to form the recess 231 can be adjusted according to specific needs and actual conditions, and the embodiments of the present disclosure are not limited thereto.

[0119] For example, after the first metal layer structure of the first barrier wall 23 is formed, the Figure 6C-6G The related steps are continued to form other structures of the display substrate, which will not be repeated here.

[0120] In the above-mentioned method for forming the first metal layer structure of the first barrier wall, the insulating layer 217 and the first barrier wall 23 are formed by the same etching solution, thereby simplifying the preparation process of the display substrate; in addition, the above-mentioned method can also form a conductive layer pattern after the first barrier wall, so that the preparation process for forming the conductive layer pattern, such as the etching process, will not further etch the first barrier wall, and thus will not affect other structures of the display substrate, so as to ensure the integrity of the display substrate structure, thereby improving the display quality and reliability of the display substrate.

[0121] At least one embodiment of the present disclosure further provides a display device, which includes a display substrate obtained by the preparation method provided by the embodiment of the present disclosure or includes the display substrate provided by the embodiment of the present disclosure. For example, the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc., and the embodiments of the present disclosure are not limited to this.

[0122] There are a few points to note:

[0123] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

[0124] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced, that is, these drawings are not drawn according to the actual scale. It is understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element may be "directly" "on" or "under" the other element or there may be intermediate elements.

[0125] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.

[0126] The above is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A method for preparing a display substrate, comprising: forming a display area and a non-display area, wherein the display area at least partially surrounds the non-display area, and the non-display area includes an opening area, A first barrier wall is formed between the display area and the opening area, wherein the first barrier wall surrounds the opening area and comprises a first metal layer structure, and a notch is formed on at least one side of the first metal layer structure surrounding the opening area. After the first barrier wall is formed, a conductive layer pattern is formed in the display area and on the first barrier wall, wherein forming the conductive layer pattern comprises: A conductive material layer is formed on the display area and the first barrier wall, and the conductive material layer is disconnected at the first barrier wall. The conductive material layer is patterned to form the conductive layer pattern.

2. The method for preparing a display substrate according to claim 1, further comprising: forming an opening at a position of the display substrate located in the opening area; as well as An image sensor and / or an infrared sensor is combined in the opening area.

3. The method for preparing a display substrate according to claim 1 or 2, wherein: Patterning the conductive material layer includes: forming a photoresist pattern on the conductive material layer, wherein the photoresist pattern covers the at least one side surface of the first barrier wall, The conductive material layer is etched using the photoresist pattern as a mask to form the conductive layer pattern.

4. The method for preparing a display substrate according to claim 3, further comprising: forming a light emitting device in the display area, The light emitting device includes a first electrode, a second electrode and an organic functional layer between the first electrode and the second electrode, and the conductive layer pattern includes the first electrode.

5. The method for preparing a display substrate according to claim 4, wherein: The organic functional layer is disconnected at the first barrier wall, The first electrode is an anode, the second electrode is a cathode, and the cathode is also disconnected at the first barrier wall.

6. The method for preparing a display substrate according to claim 1 or 2, further comprising: forming a second metal pattern in the display area, The second metal pattern includes a second metal layer structure, and the first metal layer structure and the second metal layer structure are formed by using the same film layer.

7. The method for preparing a display substrate according to claim 1 or 2, wherein: Forming the first metal layer structure includes: forming a first metal material pattern on the base substrate, The first metal material pattern is etched using a first etching solution to form the notch.

8. The method for preparing a display substrate according to claim 7, wherein: Forming the first metal material pattern includes: forming a first sub-metal pattern and a second sub-metal pattern stacked in sequence on the base substrate, The etching speed of the first etching solution on the first sub-metal pattern is greater than the etching speed on the second sub-metal pattern.

9. The method for preparing a display substrate according to claim 7, wherein: Forming the first metal material pattern includes: A third sub-metal pattern, a first sub-metal pattern and a second sub-metal pattern are sequentially stacked on the base substrate. The etching speed of the first etching solution on the first sub-metal pattern is greater than the etching speed on the second sub-metal pattern and the third sub-metal pattern.

10. The method for preparing a display substrate according to claim 1 or 2, wherein: Forming the first metal layer structure includes: forming a first metal material pattern, forming an insulating material layer in the display area and on the first metal material pattern, The insulating material layer is patterned using a second etching solution to form a patterned insulating layer.

11. The method for preparing a display substrate according to claim 10, wherein: The second etching solution also etches the first metal material pattern to form the recess.

12. The method for preparing a display substrate according to claim 11, wherein: The insulating material layer includes a photoresist material, and the second etching solution is a developer of the photoresist material.

13. The method for preparing a display substrate according to claim 12, wherein: The developer includes tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, alkyl alcohol amine, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium phosphate, sodium dihydrogen phosphate or sodium acetate.

14. The method for preparing a display substrate according to claim 13, wherein: When the developer includes tetramethylammonium hydroxide, the concentration of the tetramethylammonium hydroxide in the developer is 2-8%, The time for the developer to etch the first metal material pattern to form the recess is 60s-200s.

15. The method for preparing a display substrate according to claim 11, wherein: Forming the first metal material pattern includes: A first sub-metal pattern and a second sub-metal pattern are sequentially stacked on the base substrate. The etching speed of the second etching solution on the first sub-metal pattern is greater than the etching speed on the second sub-metal pattern.

16. The method for preparing a display substrate according to claim 11, wherein: Forming the first metal material pattern includes: A third sub-metal pattern, a first sub-metal pattern and a second sub-metal pattern are sequentially stacked on the base substrate. The etching speed of the second etching solution on the first sub-metal pattern is greater than the etching speed on the second sub-metal pattern and the third sub-metal pattern.

17. The method for preparing a display substrate according to claim 8 or 15, wherein: The material of the first sub-metal pattern includes aluminum or copper, and the material of the second sub-metal pattern includes titanium or molybdenum.

18. The method for preparing a display substrate according to claim 9 or 16, wherein: The material of the first sub-metal pattern includes aluminum or copper, the material of the second sub-metal pattern includes titanium or molybdenum, and the material of the third sub-metal pattern includes titanium or molybdenum.

19. The method for preparing a display substrate according to claim 1 or 2, further comprising: A second barrier wall is formed between the display area and the non-display area. The second barrier wall surrounds the non-display area and is formed on a side of the first barrier wall away from the non-display area. The second barrier wall and the first barrier wall are formed by using the same film layer.

20. A display substrate, comprising: A display area and a non-display area, wherein the display area at least partially surrounds the non-display area, and the non-display area includes an opening area, a first barrier wall between the display area and the opening area, wherein the first barrier wall surrounds the opening area and comprises a first metal layer structure, and a notch is formed on at least one side of the first metal layer structure surrounding the opening area, The display area includes a conductive layer pattern, wherein the conductive layer pattern also extends onto the first barrier wall and is disconnected at the at least one side surface of the first barrier wall; The display substrate further includes a light emitting device in the display area, wherein the light emitting device includes a first electrode, a second electrode, and an organic functional layer between the first electrode and the second electrode. The conductive layer pattern includes the first electrode, and the first electrode is an anode. 21 . The display substrate according to claim 20 , further comprising an opening located in the opening area and an image sensor and / or an infrared sensor combined with the opening area.

22. The display substrate according to claim 20, wherein: The organic functional layer is disconnected at the first barrier wall, The second electrode is a cathode, and the cathode is also disconnected at the first barrier wall.

23. A display device, comprising a display substrate formed by the preparation method according to any one of claims 1 to 19, or comprising a display substrate according to any one of claims 20 to 22.

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