Organic Light-Emitting Diode Display Device

Abstract

Provided is an organic light emitting diode display device. The organic light emitting diode display device includes a first substrate. The organic light emitting diode display device further includes an organic light emitting diode, which is disposed above the first substrate and includes a first electrode, an organic layer, and a second electrode. The organic light emitting diode display device further includes a conductive layer disposed above the organic light emitting diode. The organic light emitting diode display device further includes a second substrate disposed above the first substrate. The organic light emitting diode display device further includes a conductive black matrix disposed above the surface of the second substrate facing the first substrate. The organic light emitting diode display device further includes a sealant joining the first substrate and the second substrate. The organic light emitting diode display device further includes a conductive filling material filled between the first substrate and the second substrate.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority of Korean Patent Application No. 10 - 2019 - 0114257, filed with the Korean Intellectual Property Office on September 17, 2019, the disclosure of which is incorporated herein by reference. Technical field

[0003] The present disclosure relates to an organic light - emitting diode (OLED) display device, and more particularly, to an OLED display device in which transparency is improved by increasing a transmissive area and a voltage drop of a second electrode is suppressed by simplifying a structure. Background art

[0004] With the development of the information society, various demands for display devices for displaying images are increasing. In the field of display devices, flat - panel display devices (FPDs) that are thin, light, and capable of having a large area have rapidly replaced bulky cathode - ray tubes (CRTs). Examples of FPDs include liquid - crystal display devices (LCDs), plasma display panels (PDPs), OLED display devices, electrophoretic display devices (EDs), etc.

[0005] Among these FPDs, OLED display devices are self - emissive display devices and have a fast response time, high luminous efficiency, high brightness, and a wide viewing angle. In particular, OLED display devices can even be formed on flexible substrates. In addition, compared with PDPs or inorganic electroluminescent (EL) displays, OLED display devices have the following advantages: lower driving voltage, lower power consumption, and better color tone.

[0006] Recently, a transparent display device has been developed that enables a user in front of the transparent display device to see an object located behind the transparent display device through the transparent display device. For example, a transparent OLED display device is implemented as a transparent display device in which each pixel region includes an emission region that emits light and a transmissive region that transmits external light. There is a trade - off relationship in the pixel region, where the transmissive region decreases as the emission region increases, and the emission region decreases as the transmissive region increases. Therefore, it is difficult to increase the aperture ratio of the emission region. Therefore, research on transparent display devices that can increase the aperture ratio of the emission region without reducing the transmissive region continues. Summary of the invention

[0007] An object to be achieved by the present disclosure is to provide a display device that improves transparency by increasing a transmissive area and suppresses a voltage drop of a second electrode by simplifying a structure.

[0008] According to one aspect of the present disclosure, an organic light emitting diode display device is provided. The organic light emitting diode display device includes a first substrate. The organic light emitting diode display device further includes an organic light emitting diode disposed on the first substrate and including a first electrode, an organic layer, and a second electrode. The organic light emitting diode display device further includes a conductive layer disposed above the organic light emitting diode. The organic light emitting diode display device further includes a second substrate disposed above the first substrate. The organic light emitting diode display device further includes a conductive black matrix disposed above a surface of the second substrate facing the first substrate. The organic light emitting diode display device further includes a sealant joining the first substrate and the second substrate. The organic light emitting diode display device further includes a conductive filling material filled between the first substrate and the second substrate.

[0009] According to an embodiment of the present disclosure, the second electrode may be in direct contact with the conductive layer.

[0010] According to an embodiment of the present disclosure, the conductive layer may be in direct contact with the conductive filling material.

[0011] According to an embodiment of the present disclosure, the conductive filling material may be in direct contact with the conductive black matrix.

[0012] According to an embodiment of the present disclosure, the conductive layer may include one of IGZO, ITO, and IZO.

[0013] According to an embodiment of the present disclosure, the conductive layer may have a higher refractive index than the second electrode.

[0014] According to an embodiment of the present disclosure, the conductive black matrix may include one of copper, molybdenum, titanium, chromium, or an alloy thereof.

[0015] According to an embodiment of the present disclosure, the organic light emitting diode display device may further include a plurality of color filters disposed in the conductive black matrix. The conductive black matrix may have a grid shape, and the plurality of color filters are placed in the grid shape.

[0016] According to an embodiment of the present disclosure, the organic light emitting diode display device further includes: a transmissive region corresponding to a region other than the region where the organic light emitting diode and the conductive black matrix are disposed, and the transmissive region may transmit light from the back surface of the first substrate.

[0017] According to an embodiment of the present disclosure, a part of the organic layer, a part of the second electrode, and a part of the conductive layer may be stacked in the transmissive region.

[0018] According to an embodiment of the present disclosure, the organic light emitting diode display device may further include a thin film transistor connected to the first electrode of the organic light emitting diode.

[0019] According to an embodiment of the present disclosure, the second electrode may be connected to a cathode power line.

[0020] According to an embodiment of the present disclosure, the organic light emitting diode display device may further include: a connection pattern overlapping a part of the first electrode; and a repair line connected to the connection pattern, wherein the repair line is electrically connected to another first electrode adjacent to the first electrode.

[0021] According to an embodiment of the present disclosure, there is provided an organic light emitting diode display device. The organic light emitting diode display device includes a first substrate and a second substrate facing each other. The organic light emitting diode display device further includes an organic light emitting diode, which includes a first electrode, an organic layer, and a second electrode and is disposed above the first substrate. The organic light emitting diode display device further includes a conductive layer in contact with the second electrode. The organic light emitting diode display device further includes a conductive black matrix disposed above a surface of the second substrate facing the first substrate. The organic light emitting diode display device further includes a conductive filling material electrically connecting the conductive layer and the conductive black matrix.

[0022] According to an embodiment of the present disclosure, the organic light emitting diode display device may further include a plurality of color filters disposed in the conductive black matrix. The conductive black matrix may have a grid shape, and the plurality of color filters are placed in the grid shape.

[0023] According to an embodiment of the present disclosure, the conductive black matrix may be connected to a cathode power line.

[0024] According to an embodiment of the present disclosure, the organic light emitting diode display device may further include a transmissive region corresponding to a region other than the region where the organic light emitting diode and the conductive black matrix are disposed. A part of the organic layer, a part of the second electrode, and a part of the conductive layer are stacked in the transmissive region

[0025] According to an embodiment of the present disclosure, the conductive layer may have a higher refractive index than the second electrode.

[0026] According to an embodiment of the present disclosure, the second electrode may be connected to a cathode power line.

[0027] According to an embodiment of the present disclosure, the organic light emitting diode display device may further include a connection pattern overlapping a part of the first electrode and a repair line connected to the connection pattern. The repair line is electrically connected to another first electrode adjacent to the first electrode.

[0028] According to an embodiment of the present disclosure, in an OLED display device, a conductive layer in contact with a second electrode of an OLED is connected to a conductive black matrix using a conductive filling material filled therebetween. Accordingly, the resistance of the second electrode can be reduced and thus a voltage drop can be suppressed.

[0029] In addition, according to an embodiment of the present disclosure, an OLED display device includes a conductive layer whose refractive index can be easily controlled by adjusting a composition ratio. The conductive layer may have a higher refractive index than the second electrode. Accordingly, total reflection of light can be reduced and thus luminous efficiency can be improved.

[0030] In addition, according to an embodiment of the present disclosure, an OLED display device does not include a cathode contact portion. Accordingly, the size of a transmissive region can be increased and thus transmittance can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and other aspects, features, and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0032] Figure 1 is a schematic block diagram of an OLED display device;

[0033] Figure 2 schematically shows a circuit configuration of a sub-pixel;

[0034] Figure 3 shows an example of a detailed circuit configuration of a sub-pixel;

[0035] Figure 4 is a plan view of an OLED display device according to a first embodiment of the present disclosure;

[0036] Figure 5 is along Figure 4 a cross-sectional view taken along line I-I';

[0037] Figure 6 is along Figure 4 a cross-sectional view taken along line II-II';

[0038] Figure 7 is along Figure 4 a cross-sectional view taken along line III-III';

[0039] Figure 8 is a cross-sectional view of an OLED display device according to a first embodiment of the present disclosure;

[0040] Figure 9 is a cross-sectional view of an OLED display device according to a second embodiment of the present disclosure;

[0041] Figure 10 is a graph showing the refractive index of IGZO according to a wavelength range;

[0042] Figure 11 is a graph showing the refractive index of ITO according to a wavelength range;

[0043] Figure 12 is a graph showing the refractive index of IZO according to a wavelength range;

[0044] Figure 13 and Figure 14 is a plan view showing the planar layout of the black matrix according to the second embodiment of the present disclosure; and

[0045] Figure 15 is a plan view of an OLED display device according to the second embodiment of the present disclosure. Detailed Description of the Embodiments

[0046] Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. Throughout the specification, the same reference numerals denote substantially the same elements. In addition, in the following description, detailed explanations of known technologies or configurations related to the present disclosure may be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure. In addition, the names of the elements used herein are selected for convenience of description and may be different from the names of the parts used in actual products.

[0047] The display device according to the present disclosure may be an OLED display device, an LCD, an ED, etc., but in the present disclosure, an OLED display device will be described as an example. The OLED display device includes a first electrode as an anode, a second electrode as a cathode, and an organic layer formed of an organic material between the first electrode and the second electrode. Therefore, the OLED display device is a self-emitting display device in which holes from the first electrode and electrons from the second electrode are combined in the organic layer to form excitons as hole-electron pairs. Therefore, due to the energy generated when the excitons return to the ground state, the OLED display device emits light.

[0048] Figure 1 is a schematic block diagram of an OLED display device, Figure 2 schematically shows the circuit configuration of a sub-pixel, and Figure 3 shows an example of the detailed circuit configuration of a sub-pixel.

[0049] As Figure 1 shown, the OLED display device includes an image processor 110, a timing controller 120, a data driver 130, a scan driver 140, and a display panel 150.

[0050] The image processor 110 outputs a data enable signal DE and a data signal DATA provided from the outside. In addition to the data enable signal DE, the image processor 110 may output at least one of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal. However, for ease of explanation, the illustration of these signals will be omitted.

[0051] The timing controller 120 receives the data signal DATA and a driving signal including at least one of the data enable signal DE, the vertical synchronization signal, the horizontal synchronization signal, and the clock signal from the image processor 110. The timing controller 120 outputs a gate timing control signal GDC for controlling the operation timing of the scan driver 140 and a data timing control signal DDC for controlling the operation timing of the data driver 130 based on the driving signal.

[0052] In response to the data timing control signal DDC provided from the timing controller 120, the data driver 130 samples and latches the data signal DATA provided from the timing controller 120. Then, the data driver 130 converts the signal into a gamma reference voltage and outputs the signal. The data driver 130 outputs the data signal DATA through data lines DL1 to DLn. The data driver 130 may be configured in the form of an integrated circuit (IC).

[0053] In response to the gate timing control signal GDC provided from the timing controller 120, the scan driver 140 outputs a scan signal. The scan driver 140 outputs the scan signal through gate lines GL1 to GLm. The scan driver 140 may be configured in the form of an integrated circuit (IC) or may be provided at the display panel 150 in a gate-in-panel (GIP) scheme.

[0054] The display panel 150 displays an image in response to the data signal DATA and the scan signal provided from the data driver 130 and the scan driver 140, respectively. The display panel 150 includes sub-pixels SP that are operated to display an image.

[0055] The sub-pixels SP may include red, green, and blue sub-pixels, or may include white, red, green, and blue sub-pixels. The sub-pixels SP may have one or more different emission regions depending on emission characteristics.

[0056] As Figure 2 shown, each sub-pixel SP includes a switching transistor SW, a driving transistor DR, a capacitor Cst, a compensation circuit CC, and an organic light-emitting diode OLED.

[0057] In response to a scan signal provided through the first gate line GL1, the switching transistor SW performs a switching operation so that a data signal provided through the data line DL can be stored as a data voltage in the capacitor Cst. The driving transistor DR operates according to the data voltage stored in the capacitor Cst so that a driving current can flow between the power line EVDD (high potential voltage) and the cathode power line EVSS (low potential voltage). The organic light-emitting diode OLED operates to emit light according to the driving current formed by the driving transistor DR.

[0058] The compensation circuit CC is a circuit added inside the sub-pixel to compensate for the threshold voltage of the driving transistor DR. The compensation circuit CC includes at least one transistor. The compensation circuit CC has various configurations depending on the external compensation method. Examples thereof will be described below.

[0059] As Figure 3 shown, the compensation circuit CC includes a sensing transistor ST and a sensing line VREF (or reference line). The sensing transistor ST is connected between the source electrode of the driving transistor DR and the anode electrode of the organic light-emitting diode OLED (hereinafter referred to as the sensing node). The sensing transistor ST operates to supply an initialization voltage (or sensing voltage) received through the sensing line VREF to the sensing node of the driving transistor DR. In addition, the sensing transistor ST operates to sense the voltage or current of the sensing node of the driving transistor DR or the voltage or current of the sensing line VREF.

[0060] One of the source electrode and the drain electrode of the switching transistor SW is connected to the data line DL, and the other is connected to the gate electrode of the driving transistor DR. One of the source electrode and the drain electrode of the driving transistor DR is connected to the power line EVDD, and the other is connected to the first electrode serving as the anode of the organic light-emitting diode OLED. The capacitor Cst includes a lower electrode connected to the gate electrode of the driving transistor DR and an upper electrode connected to the anode electrode of the organic light-emitting diode OLED. The organic light-emitting diode OLED includes a first electrode connected to one of the source electrode and the drain electrode of the driving transistor DR and a second electrode serving as the cathode electrode connected to the second power line EVSS. One of the source electrode and the drain electrode of the sensing transistor ST is connected to the sensing line VREF. In addition, the other of the source electrode and the drain electrode of the sensing transistor ST is connected to the first electrode of the organic light-emitting diode OLED and the other of the source electrode and the drain electrode of the driving transistor DR serving as the sensing node.

[0061] According to the external compensation algorithm (or the configuration of the compensation circuit), the operation time of the sensing transistor ST may be similar to / same as or different from the operation time of the switching transistor SW. For example, the gate electrode of the switching transistor SW may be connected to the first gate line GL1, and the gate electrode of the sensing transistor ST may be connected to the second gate line GL2. In this case, the scan signal Scan is sent to the first gate line GL1, and the sense signal Sense is sent to the second gate line GL2. In another example, the first gate line GL1 connected to the gate electrode of the switching transistor SW and the second gate line GL2 connected to the gate electrode of the sensing transistor ST may be connected and shared.

[0062] The sense line VREF may be connected to the data driver. In this case, the data driver may sense the sensing node of each sub-pixel during the non-display time of the image or during the time period of the Nth frame (N is an integer equal to or greater than 1) and generate a sensing result in real time. At the same time, the switching transistor SW and the sensing transistor ST may be turned on simultaneously. In this case, the sensing operation through the sense line VREF and the data output operation of outputting the data signal may be separated (distinguished) from each other based on the time division scheme of the data driver.

[0063] In addition, the compensation target according to the sensing result may be a digital data signal, an analog data signal, a gamma voltage, etc. In addition, the compensation circuit that generates a compensation signal (or compensation voltage) based on the sensing result may be provided inside the data driver or inside the timing controller. Additionally, the compensation circuit may be implemented as a separate circuit.

[0064] Figure 3 An example of a sub-pixel having a 3T (transistor) 1C (capacitor) structure is shown, which includes a switching transistor SW, a driving transistor DR, a capacitor Cst, an organic light-emitting diode OLED, and a sensing transistor ST. However, if a compensation circuit CC is added, the sub-pixel may be configured to have a 3T2C, 4T2C, 5T2C, or 6T2C structure.

[0065] Figure 4 is a plan view of an OLED display device according to a first embodiment of the present disclosure, and Figure 5 is along Figure 4 The cross-sectional view taken along the line I-I'. Figure 6 is along Figure 4 The cross-sectional view taken along the line II-II', and Figure 7 is along Figure 4 The cross-sectional view taken along the line III-III'.

[0066] Referring to Figure 4, in the OLED display device of the present disclosure, the region where the gate line GL intersects the first data lines DL1 to DL4 is the first sub-pixels SPn1 to SPn4. Each of the first sub-pixels SPn1 to SPn4 includes a first emission region EMA1, a second emission region EMA2, and a transmission region TA.

[0067] Specifically, the first sub-pixels SPn1 to SPn4 respectively connected to the first data lines DL1 to DL4 are commonly connected to the sense line VREF. The sense line VREF is connected to the first sub-pixel SPn1 and the third sub-pixel SPn3 through the first sense connection line SC1, and is connected to the second sub-pixel SPn2 and the fourth sub-pixel SPn4 through the second sense connection line SC2. The power line EVDD is disposed at one side of the first sub-pixel SPn1 and the second sub-pixel SPn2, and each of the first sub-pixels SPn1 to SPn4 is connected to the power line EVDD through the power connection line EVC. The cathode power line EVSS is disposed at one side of the third sub-pixel SPn3 and the fourth sub-pixel SPn4, and is connected to a second electrode (not shown) serving as a cathode.

[0068] The first anode electrode ANO1 is disposed in the first emission region EMA1 of each sub-pixel, and the second anode electrode ANO2 is disposed in the second emission region EMA2 such that the first electrode ANO of the organic light-emitting diode is disposed. The first anode electrode ANO1 and the second anode electrode ANO2 are connected to each other to form the first electrode ANO in each sub-pixel. Each sub-pixel includes a driving transistor DR, a capacitor Cst, a sensing transistor ST, and a switching transistor SW. At least a part of the driving transistor DR overlaps with the first emission region EMA1, and at least a part of the sensing transistor ST and the switching transistor SW overlaps with the second emission region EMA2.

[0069] The sense line VREF is connected to the corresponding sensing transistors ST of the first sub-pixels SPn1 to SPn4 through the first sense connection line SC1 and the second sense connection line SC2. The power line EVDD is connected to the corresponding driving transistors DR of the first sub-pixel SPn1 and the second sub-pixel SPn2 through the power connection line EVC. The power connection line EVC is connected to each of the first sub-pixels SPn1 to SPn4. The gate line GL is respectively connected to the sensing transistors ST and the switching transistors SW of the first sub-pixels SPn1 to SPn4.

[0070] The first electrode ANO includes a first anode electrode ANO1, a second anode electrode ANO2, and an anode connection electrode AP. The anode connection electrode AP is connected to the driving transistor DR and branches to the first anode electrode ANO1 and the second anode electrode ANO2. The first anode electrode ANO1, the second anode electrode ANO2, and the anode connection electrode AP are configured integrally.

[0071] The first repair portion RP1 is a portion that overlaps a part of the connection region between the first anode electrode ANO1 and the second anode electrode ANO2 of the first electrode ANO. When any one of the emission regions fails due to impurities that may be generated during processing, the first anode electrode ANO1 in the first emission region EMA1 or the second anode electrode ANO2 in the second emission region EMA2 is cut in the first repair portion RP1. Thus, the sub-pixel can be repaired.

[0072] In addition, the second repair portion RP2 is a portion that overlaps a part of the first anode electrode ANO1 or the second anode electrode ANO2. When any one of the emission regions fails due to impurities that may be generated during processing, the first anode electrode ANO1 or the second anode electrode ANO2 of the first repair portion RP1 is cut in the second repair portion RP2. Then, the cut anode electrode is connected to the first electrode (anode electrode) of another adjacent sub-pixel in the second repair portion RP2 to repair the sub-pixel. In the second repair portion RP2, a repair line RPL is provided that extends from one side of the power line EVDD to an adjacent sub-pixel and is parallel to the power line EVDD.

[0073] As described above, the first electrode ANO branches to the first anode electrode ANO1 in the first emission region EMA1 and the second anode electrode ANO2 in the second emission region EMA2 to have the first repair portion RP1. Hereinafter, the connection relationship of the first electrode ANO will be described in detail.

[0074] Referring to Figure 5 , the cross-sectional structure of the first sub-pixel SPn1 will be described. In the OLED display device according to the present disclosure, a light-shielding layer 220 is provided above the first substrate 210. The light-shielding layer 220 blocks light incident from the outside and suppresses the generation of a photocurrent in the thin-film transistor. A buffer layer 225 is provided above the light-shielding layer 220. The buffer layer 225 protects the thin-film transistor to be formed in subsequent processing from impurities such as alkali ions flowing out of the light-shielding layer 220. The buffer layer 225 may be silicon oxide (SiOX), silicon nitride (SiNx), or a multi-layer thereof.

[0075] The semiconductor layer 230 of the driving transistor DR is disposed above the buffer layer 225, and the capacitor lower electrode LCst is disposed above the buffer layer 225 and separately from the semiconductor layer 230. The semiconductor layer 230 and the capacitor lower electrode LCst may be formed of a silicon semiconductor or an oxide semiconductor. The silicon semiconductor may include amorphous silicon or crystalline polysilicon. Polysilicon has a high mobility (e.g., 100 cm 2 / Vs or higher), low power consumption, and excellent reliability. Therefore, polysilicon can be applied to the gate driver and / or multiplexer (MUX) used in the driving element, or to the driving TFT in each pixel. At the same time, the oxide semiconductor has a low off-current. Therefore, the oxide semiconductor is suitable for the switching TFT having a short on-time and a long off-time. In addition, due to the low off-current, the oxide semiconductor increases the voltage holding time of the pixel. Therefore, the oxide semiconductor is suitable for a display device that requires low-speed driving and / or low power consumption. In addition, the semiconductor layer 230 includes a drain region and a source region each containing a p-type or n-type impurity, and also includes a channel between the drain region and the source region. The capacitor lower electrode LCst may be doped with an impurity and become conductive.

[0076] A gate insulating layer 235 is disposed above the semiconductor layer 230 and the capacitor lower electrode LCst. The gate insulating layer 235 may be silicon oxide (SiOx), silicon nitride (SiNx), or a multi-layer thereof. A gate electrode 240 is disposed above the gate insulating layer 235 corresponding to a specific region of the semiconductor layer 230, i.e., the channel when an impurity is implanted. The gate electrode 240 is formed of any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof. In addition, the gate electrode 240 may be a multi-layer formed of any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof. For example, the gate electrode 240 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

[0077] An interlayer insulating layer 245 for insulating the gate electrode 240 is provided above the gate electrode 240. The interlayer insulating layer 245 may be a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, or a multi-layer thereof. A source electrode 250a and a drain electrode 250b are provided above the interlayer insulating layer 245. The source electrode 250a and the drain electrode 250b are connected to the semiconductor layer 230 through contact holes, and the source region of the semiconductor layer 230 is exposed through the contact holes. Each of the source electrode 250a and the drain electrode 250b may be formed as a single layer or a multi-layer. If each of the source electrode 250a and the drain electrode 250b is formed as a single layer, it may be formed of any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. In addition, if each of the source electrode 250a and the drain electrode 250b is formed as a multi-layer, it may be formed as a bilayer of molybdenum / aluminum-neodymium or a trilayer of titanium / aluminum / titanium, molybdenum / aluminum / molybdenum, or molybdenum / aluminum-neodymium / molybdenum. Therefore, the driving transistor DR is configured to include the semiconductor layer 230, the gate electrode 240, the source electrode 250a, and the drain electrode 250b. In addition, the capacitor Cst is configured to include a capacitor lower electrode LCst and the drain electrode 250b serving as a capacitor upper electrode.

[0078] A first protective layer 260 is provided on the substrate 210 including the driving transistor DR and the capacitor Cst. The first protective layer 260 is an insulating layer for protecting the elements below the first protective layer 260, and may be a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, or a multi-layer thereof. An outer coating 265 is provided above the first protective layer 260. The outer coating 265 may be a planarization layer for reducing the step of the underlying structure, and may be formed of an organic material such as polyimide, benzocyclobutene series resin, and acrylate. The outer coating 265 may be formed by a spin-on glass (SOG) method of coating an organic material in a liquid state and then curing the organic material. A through hole VIA is positioned in a part of the outer coating 265, and the first protective layer 260 and the drain electrode 250b are exposed through the through hole VIA.

[0079] An organic light-emitting diode OLED is disposed above the outer coating 265. More specifically, a first anode electrode ANO1 and a second anode electrode ANO2 are disposed above the outer coating 265. The first anode electrode ANO1 and the second anode electrode ANO2 serve as pixel electrodes and are connected to the drain electrode 250b of the driving transistor DR through an anode connection electrode AP connected to the first anode electrode ANO1 and the second anode electrode ANO2. The first anode electrode ANO1 and the second anode electrode ANO2 are anodes and can be formed of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). The OLED display device 100 according to the present disclosure has a top emission type structure, and the first anode electrode ANO1 and the second anode electrode ANO2 can be configured as reflective electrodes. Accordingly, the first anode electrode ANO1 and the second anode electrode ANO2 may further include a reflective layer (not shown). The reflective layer can be formed of aluminum (Al), copper (Cu), silver (Ag), nickel (Ni), or an alloy thereof. Preferably, the reflective layer can be formed of APC (silver / palladium / copper alloy).

[0080] A bank layer 280 is disposed above the first substrate 2110 including the first anode electrode ANO1 and the second anode electrode ANO2. The bank layer 280 is disposed between pixels. The bank layer 280 is formed of an organic material such as polyimide, benzocyclobutene series resin, and acrylate. The bank layer 280 includes an opening 285 through which the first anode electrode ANO1 and the second anode electrode ANO2 are exposed. An organic layer EML in contact with the first anode electrode ANO1 and the second anode electrode ANO2 is disposed on the entire surface of the first substrate 110. The organic layer EML is a layer in which electrons and holes are combined to emit light, and may include a hole injection layer or a hole transport layer between the organic layer EML and the first electrode ANO. The organic layer EML may further include an electron transport layer or an electron injection layer above the organic layer EML.

[0081] A second electrode CAT is disposed above the organic layer EML. The second electrode CAT is disposed on the entire surface of the active region A / A and serves as a cathode electrode. The second electrode CAT can be formed of magnesium (Mg), calcium (Ca), aluminum (Al), silver (Ag), or an alloy thereof, each having a low work function, or can be formed of a transparent conductive oxide such as IZO. The second electrode CAT can be a transmissive electrode and can be thin enough to transmit light.

[0082] Meanwhile, in the first sub-pixel SPn1 of the present disclosure, the drain electrode 250b of the driving transistor DR is connected to the first anode electrode ANO1 and the second anode electrode ANO2 through the anode connection electrode AP. Specifically, the anode connection electrode AP is connected to the drain electrode 250b through a through hole VIA formed in the first protective layer 260 and the outer coating 265. The anode connection electrode AP connected to the drain electrode 250b of the driving transistor DR extends to the first repair portion RP1. As Figure 4 shown, the anode connection electrode AP branches to the first anode electrode ANO1 and the second anode electrode ANO2 in the first repair portion RP1. When any one of the emission regions fails due to impurities that may be generated during processing, the first anode electrode ANO1 or the second anode electrode ANO2 can be cut in the first repair portion RP1. Therefore, the emission region can be repaired.

[0083] Meanwhile, in the present disclosure, a second repair portion RP2 connected to the first anode electrode ANO1 or the second anode electrode ANO2 is provided. In the following, the second repair portion RP2 connected to the first anode electrode ANO1 will be described as an example.

[0084] Referring to Figure 6 , in the second repair portion RP2, a repair line RPL is disposed above the first substrate 210, and a buffer layer 225 and an interlayer insulating layer 245 are disposed on the repair line RPL. The buffer layer 225 and the interlayer insulating layer 245 include a first contact hole CNH1, and the repair line RPL below the buffer layer 225 and the interlayer insulating layer 245 is exposed through the first contact hole CNH1. A first connection pattern SDP1 in contact with the repair line RPL through the first contact hole CNH1 is disposed above the interlayer insulating layer 245. The first connection pattern SDP1 is formed of the same material as the source electrode. A first protective layer 260 is disposed above the first connection pattern SDP1, and a first anode connection pattern AN1 partially overlapping the first connection pattern SDP1 is disposed above the first protective layer 260. As Figure 4 shown, the first anode connection pattern AN1 and the first anode electrode ANO1 are formed integrally in the first emission region EMA1. A bank layer 280, an emission layer EML, and a second electrode CAT are sequentially stacked above the first anode connection pattern AN1.

[0085] When any one of the emission regions fails due to impurities that may be generated during processing, the first anode electrode ANO1 of the first repair portion RP1 of the sub-pixel is cut in the second repair portion RP2. Then, the cut anode is connected to the first electrode of another adjacent sub-pixel in the second repair portion RP2 to repair the sub-pixel. Specifically, the first protective layer 260 between the first connection pattern SDP1 and the first anode connection pattern AN1 can be removed by irradiating a laser beam to the second repair portion RP2. In this case, the first connection pattern SDP1 can contact and be electrically connected to the first anode connection pattern AN1. Therefore, the voltage applied to the first electrode of another adjacent sub-pixel (for example, the sub-pixel under the third sub-pixel SPn3) can be applied to the first anode electrode ANO1 of the first sub-pixel SPn1 in the first emission region EMA1 to repair the sub-pixel.

[0086] Meanwhile, as Figure 4 shown in the present disclosure, a cathode power line EVSS for applying a low potential voltage to the second electrode CAT is provided. The cathode power line EVSS is connected to the second electrode CAT that partially overlaps the cathode power line EVSS in the cathode contact portion CAC.

[0087] Specifically, referring to Figure 7 , in the cathode contact portion CAC, the cathode power line EVSS is disposed above the first substrate 210. In addition, a buffer layer 225 and an interlayer insulating layer 245 are disposed on the cathode power line EVSS. The buffer layer 225 and the interlayer insulating layer 245 include a second contact hole CNH2, and the cathode power line EVSS below the buffer layer 225 and the interlayer insulating layer 245 is exposed through the second contact hole CNH2. A second connection pattern SDP2 connected to the cathode power line EVSS through the second contact hole CNH2 is disposed above the interlayer insulating layer 245. The second connection pattern SDP2 is formed of the same material as the source electrode. A first protective layer 260 is disposed above the second connection pattern SDP2, and the first protective layer 260 includes a third contact hole CNH3, and the second connection pattern SDP2 below the first protective layer 260 is exposed through the third contact hole CNH3. An outer coating 265 is disposed on the first protective layer 260 and includes a fourth contact hole CNH4, and the second connection pattern SDP2 below the outer coating 265 is exposed through the fourth contact hole CNH4. A second anode connection pattern AN2 is disposed above the outer coating 265 and is connected to the second connection pattern SDP2 through the third contact hole CNH3 and the fourth contact hole CNH4. A bank layer 280 is disposed above the second anode connection pattern AN2 and includes a fifth contact hole CNH5, and the second anode connection pattern AN2 below the bank layer 280 is exposed through the fifth contact hole CNH5. An emission layer EML and a second electrode CAT are sequentially stacked above the bank layer 280.

[0088] The cathode contact portion CAC serves to reduce the resistance while applying a low-potential voltage to the second electrode CAT. Therefore, the second electrode CAT and the cathode power line EVSS can be connected to each other by selectively irradiating a laser beam onto the cathode contact portion CAC to reduce the resistance of the second electrode CAT. Specifically, if a laser beam is irradiated onto the cathode contact portion CAC, the emission layer EML is removed. As a result, the second electrode CAT can contact and be electrically connected to the second anode connection pattern AN2. Therefore, the second electrode CAT can be connected to the cathode power line EVSS through the second anode connection pattern AN2, enabling the resistance of the second electrode CAT to be reduced.

[0089] Figure 8 is a cross-sectional view of an OLED display device according to a first embodiment of the present disclosure. Figure 8 Shows the overall cross-sectional shape of the OLED display device, and a plurality of sub-pixels and a plurality of transmissive regions are provided inside the OLED display device. However, an example in which only the sub-pixels and the transmissive regions are provided will be described. In addition, parts that are the same as or correspond to the above parts will be assigned the same reference numerals and will be briefly described.

[0090] Refer to Figure 8 , in the OLED display device according to the first embodiment of the present disclosure, a light-shielding layer 220 is provided above the first substrate 210. In addition, a buffer layer 225 is provided above the light-shielding layer 220. The semiconductor layer 230 of the driving transistor DR is provided above the buffer layer 225, and a gate insulating layer 235 is provided above the semiconductor layer 230. The gate electrode 240 is provided above the gate insulating layer 235 corresponding to a specific region, i.e., the channel, of the semiconductor layer 230. An interlayer insulating layer 245 is provided above the gate electrode 240, and a source electrode 250a and a drain electrode 250b are provided above the interlayer insulating layer 245. Therefore, the driving transistor DR is configured to include a semiconductor layer 230, a gate electrode 240, a source electrode 250a, and a drain electrode 250b.

[0091] A first protective layer 260 is disposed above a first substrate 210 including a driving transistor DR, and an outer coating 265 is disposed above the first protective layer 260. The outer coating 265 includes a through hole VIA through which the first protective layer 260 is exposed to expose the drain electrode 250b. The outer coating 265 is not disposed in the transmissive region TA. Therefore, yellowing of the transmitted light caused by the outer coating 265 can be suppressed. An organic light-emitting diode OLED is disposed on the outer coating 265. More specifically, a first electrode ANO is disposed above the outer coating 265 and is connected to the drain electrode 250b of the driving transistor DR through the through hole VIA. A bank layer 280 is disposed above the outer coating 265 on which the first electrode ANO has been formed. The bank layer 280 includes an opening 285 through which the first electrode ANO is exposed. Like the outer coating 265, the bank layer 280 is not disposed in the transmissive region TA. Therefore, yellowing of the transmitted light caused by the bank layer 280 can be suppressed.

[0092] An organic layer EML in contact with the first electrode ANO is disposed above the bank layer 280. A second electrode CAT is disposed above the organic layer EML. The organic layer EML and the second electrode CAT are formed integrally in the transmissive region TA. Therefore, the organic light-emitting diode OLED is configured to include the first electrode ANO, the organic layer EML, and the second electrode CAT.

[0093] Meanwhile, a cover layer 300 is disposed on the second electrode CAT. The cover layer 300 serves as a protective layer to suppress oxidation of the second electrode CAT caused by moisture and oxygen from the outside. In addition, the cover layer 300 serves as a light compensation layer to reduce loss of light emitted from the organic layer EML when the light passes through the second electrode CAT and reaches the atmosphere and to improve the light-emitting efficiency. The cover layer 300 may be formed of an organic material. A second protective layer 310 is disposed above the cover layer 300. The second protective layer 310 has the same configuration as the above-mentioned first protective layer 260 and protects the organic light-emitting diode OLED below the second protective layer 310.

[0094] A second substrate 320 is disposed to face the first substrate 210. The second substrate 320 may be formed as a transparent substrate to transmit light. A black matrix 330 and a color filter 340 are disposed above the surface of the second substrate 320, that is, the surface facing the first substrate 210. The color filter 340 changes the color of the light emitted from the organic layer EML. For example, the color filter 340 may change white light emitted from the organic layer EML into red light, green light, or blue light. The black matrix 330 is disposed around the color filter 340. The black matrix 330 serves to suppress color mixing between sub-pixels and improve the contrast. A sealant 350 coated at the edge of the first substrate 210 is used to bond the first substrate 210 and the second substrate 320 to each other. Herein, a filling material 360 is filled between the first substrate 210 and the second substrate 320.

[0095] As described above, the OLED display device according to the first embodiment of the present disclosure includes a repair portion. Accordingly, when a sub-pixel fails or is detected as defective, it can be repaired. In addition, the cathode power line is connected to the second electrode, and accordingly, the resistance of the second electrode can be reduced and thus the voltage drop of the second electrode can be suppressed.

[0096] Figure 9 is a cross-sectional view of an OLED display device according to a second embodiment of the present disclosure. Figure 10 is a graph showing the refractive index of IGZO according to a wavelength range, and Figure 11 is a graph showing the refractive index of ITO according to a wavelength range. Figure 12 is a graph showing the refractive index of IZO according to a wavelength range. Figure 13 and Figure 14 is a plan view showing a planar layout of a black matrix according to a second embodiment of the present disclosure, and Figure 15 is a plan view of an OLED display device according to a second embodiment of the present disclosure. In the following, parts that are the same as or corresponding to parts of the above-described first embodiment will be briefly described.

[0097] Referring to Figure 9 , in the OLED display device according to the second embodiment of the present disclosure, a light-shielding layer 420 is disposed above a first substrate 410, and a buffer layer 425 is disposed above the light-shielding layer 420. A semiconductor layer 430 of a driving transistor DR is disposed above the buffer layer 425, and a gate insulating layer 435 is disposed above the semiconductor layer 430. A gate electrode 440 is disposed above the gate insulating layer 435 corresponding to a specific region of the semiconductor layer 430, i.e., a channel. An interlayer insulating layer 445 is disposed above the gate electrode 440, and a source electrode 450a and a drain electrode 450b are disposed on the interlayer insulating layer 445. Accordingly, the driving transistor DR is configured to include the semiconductor layer 430, the gate electrode 440, the source electrode 450a, and the drain electrode 450b.

[0098] The first protective layer 460 is disposed on the first substrate 410 including the driving transistor DR, and the outer coating 465 is disposed above the first protective layer 460. The outer coating 465 includes a through hole VIA through which the first protective layer 460 is exposed to expose the drain electrode 450b. The outer coating 465 is not disposed in the transmission region TA. Therefore, the yellowing of the transmitted light caused by the outer coating 465 can be suppressed. The organic light-emitting diode OLED is disposed on the outer coating 465. More specifically, the first electrode ANO is disposed above the outer coating 465 and is connected to the drain electrode 450b of the driving transistor DR through the through hole VIA. The bank layer 480 is disposed above the outer coating 465 on which the first electrode ANO has been formed. The bank layer 480 includes an opening 485 through which the first electrode ANO is exposed. Like the outer coating 465, the bank layer 480 is not disposed in the transmission region TA. Therefore, the yellowing of the transmitted light caused by the bank layer 480 can be suppressed.

[0099] The organic layer EML in contact with the first electrode ANO is disposed above the bank layer 480. The second electrode CAT is disposed above the organic layer EML. The organic layer EML and the second electrode CAT are formed integrally in the transmission region TA. Therefore, the organic light-emitting diode OLED is configured to include the first electrode ANO, the organic layer EML, and the second electrode CAT.

[0100] Meanwhile, different from the above-described first embodiment, a conductive layer 500 is disposed above the second electrode CAT. The conductive layer 500 serves as an auxiliary electrode to reduce the resistance of the second electrode CAT and suppress the voltage drop of the second electrode CAT. Therefore, the display quality can be improved. In addition, the conductive layer 500 can serve as the cover layer described in the first embodiment. That is, the conductive layer 500 can serve as a protective layer to suppress the oxidation of the second electrode CAT caused by moisture and oxygen from the outside.

[0101] In addition, the conductive layer 500 serves as a light compensation layer to reduce the loss of light emitted from the organic layer EML when the light reaches the atmosphere through the second electrode CAT and improve the light emission efficiency. The conductive layer 500 can be formed of a material capable of controlling the refractive index of the conductive layer by adjusting the composition ratio of the elements of the conductive layer. For example, the conductive layer 500 can be formed of any one of IGZO, ITO, or IZO that has become conductive. IGZO can easily control the refractive index of the thin film by adjusting the composition ratio of indium (In), gallium (Ga), zinc (Zn), and oxygen (O). ITO can also easily control the refractive index of the thin film by adjusting the composition ratio of indium (In), tin (Sn), and oxygen (O). In addition, IZO can easily control the refractive index of the thin film by adjusting the composition ratio of indium (In), zinc (Zn), and oxygen (O).

[0102] The refractive indices of IGZO, ITO, and IZO in each wavelength range are shown in Figures 10 to 12 respectively. Referring to Figures 10 to 12 , at wavelengths ranging from 250 nm to 800 nm, the refractive index of IGZO ranges from 1.95 to 2.3. In addition, in the same wavelength range, the refractive index of ITO ranges from 1.83 to 2.35, and the refractive index of IZO ranges from 1.93 to 2.3. By adjusting the composition ratio of IGZO, ITO, or IZO to control the refractive index of IGZO, ITO, or IZO within the above range, the conductive layer 500 can be formed to serve as a desired optical compensation layer.

[0103] The light emitted from the organic layer EML is incident on the conductive layer 500 through the second electrode CAT. Here, when light is incident from a high refractive index medium to a low refractive index medium, total internal reflection of the light occurs at an angle equal to or greater than the threshold angle, which results in light loss. Therefore, in the present disclosure, by adjusting the elemental composition ratio of IGZO or ITO in the conductive layer 500, the conductive layer 500 is formed to have a refractive index higher than that of the second electrode CAT. Therefore, light is allowed to be incident from the second electrode CAT having a low refractive index to the conductive layer 500 having a high refractive index. Therefore, total internal reflection can be suppressed and thus light loss can be reduced.

[0104] In addition, considering the wavelengths of R, G, and B, the conductive layer 500 can be formed to have an optimal thickness to increase constructive interference at each wavelength. That is, the conductive layer 500 can serve as an optical compensation layer by adjusting the thickness according to the constructive interference condition of light (2ndcosθ = λ / 2(2m + 1)) in each wavelength range. In the equation 2ndcosθ = λ / 2(2m + 1), n is the refractive index of the conductive layer, d is the thickness of the conductive layer, θ is the refraction angle, and m is an integer other than 0. In particular, by adjusting the composition ratio of IGZO or ITO that has become conductive, the conductive layer 500 is formed as a thin film having a high refractive index of 1.8 or higher, and thus the thickness can also be reduced. This is because as the refractive index of the thin film becomes higher, even if the thickness of the thin film is reduced under the constructive interference condition, the thin film can satisfy the constructive interference condition. Even if the thickness of the conductive layer 500 is reduced, the conductive layer formed by sputtering can be a dense thin film. Therefore, the conductive layer can block the penetration of moisture from the outside.

[0105] The conductive layer 500 may be formed of IGZO that becomes conductive through a plasma process. IGZO is an oxide and thus is not oxidized by oxygen and moisture from the outside. Accordingly, the conductive layer 500 may protect the second electrode CAT. In addition, IGZO has become conductive and thus has a low resistance. Accordingly, the conductive layer 500 may be used as an auxiliary electrode to reduce the resistance of the second electrode CAT. However, the conductive layer 500 of the present disclosure is not limited thereto and may be formed of any material as long as it is a transparent and low-resistance oxide.

[0106] Meanwhile, the second substrate 520 is disposed to face the first substrate 410. The second substrate 520 may be formed as a transparent substrate to transmit light. A black matrix 530 and a color filter 540 are provided on the surface of the second substrate 520, that is, above the surface of the second substrate 520 facing the first substrate 410. The color filter 540 changes the color of the light emitted from the organic layer EML. For example, the color filter 540 may change white light emitted from the organic layer EML into red light, green light, or blue light.

[0107] The black matrix 530 is disposed around the color filter 540. The black matrix 530 serves to suppress color mixing between sub-pixels and improve contrast. In the second embodiment of the present disclosure, the black matrix 530 may be conductive so that it can be used as an auxiliary electrode. For example, the black matrix 530 may be conductive and formed as a single layer or multiple layers of copper, molybdenum, titanium, chromium, or an alloy thereof having a low reflectance to be used as the black matrix.

[0108] As Figure 13 shown, the black matrix 530 may have a grid shape in which the color filters 540 of the respective sub-pixels R, G, B, and W are placed. The black matrix 530 may separate the sub-pixels from the transmissive regions. In addition, as Figure 14 shown, the black matrix 530 is formed in a grid shape in the active region A / A and integrated as a single body outside the active region A / A. The integrated black matrix 530 may be connected to a cathode power line (not shown) outside the active region A / A and supplied with cathode power.

[0109] Meanwhile, referring again to Figure 9 , the first substrate 410 and the second substrate 520 are joined to each other using a sealant 550 coated at the edge of the first substrate 410. Herein, a filling material 560 is filled between the first substrate 410 and the second substrate 520. In the second embodiment of the present disclosure, the filling material 560 is conductive to electrically connect the conductive layer 500 and the black matrix 530. That is, the filling material 560 may be formed of a conductive filling material exhibiting conductivity. The conductive filling material 560 may be formed of an organic material such as a conductive polymer.

[0110] Thus, in the second embodiment of the present disclosure, the conductive layer 500 in direct contact with the second electrode CAT is electrically connected to the conductive black matrix 530 using the conductive filler material 560. Accordingly, the resistance of the second electrode CAT can be reduced by distributing the resistance to the conductive filler material 560 and the conductive black matrix 530.

[0111] Thus, in the second embodiment of the present disclosure, the second electrode CAT is connected to the black matrix 530 serving as a cathode power line. Accordingly, the cathode contact portion where the second electrode contacts the cathode power line in the active region can be omitted. Specifically, in the example shown in Figure 4 , the cathode contact portion CAC is provided between the sub-pixel and the transmissive region TA, but in the second embodiment shown in Figure 15 , the cathode contact portion can be omitted. Accordingly, the size of the transmissive region can be increased by as much as the size of the omitted cathode contact portion. Thus, the transparency of the OLED display device according to the second embodiment of the present disclosure can be improved.

[0112] Those of ordinary skill in the art will understand that various changes and modifications can be applied without departing from the technical idea of the present disclosure. Accordingly, the technical scope of the present disclosure is not limited to the detailed description of the specification, but should be defined by the appended claims.

Claims

1. An organic light-emitting diode display device, comprising: a first substrate; an organic light-emitting diode, which is disposed above the first substrate and includes a first electrode, an organic layer, and a second electrode; a conductive layer, which is disposed above the organic light-emitting diode; a second substrate disposed above the first substrate; a conductive black matrix, which is disposed above the surface of the second substrate facing the first substrate; a sealant joining the first substrate and the second substrate; and a conductive filling material, which is filled between the first substrate and the second substrate, wherein the second electrode is in direct contact with the conductive layer in its entirety and the conductive layer has a higher refractive index than the second electrode, wherein the first electrode includes a first anode electrode, a second anode electrode, and an anode connection electrode configured to be integral, wherein the anode connection electrode branches to the first anode electrode and the second anode electrode, and a first repair portion is a portion overlapping a part of the connection region between the first anode electrode and the second anode electrode.

2. The organic light-emitting diode display device according to claim 1, wherein, the conductive layer is in direct contact with the conductive filling material.

3. The organic light-emitting diode display device according to claim 2, wherein, the conductive filling material is in direct contact with the conductive black matrix.

4. The organic light-emitting diode display device according to claim 1, wherein, the conductive layer includes one of IGZO, ITO, and IZO.

5. The organic light-emitting diode display device according to claim 1, wherein, the conductive black matrix includes one of copper, molybdenum, titanium, chromium, or an alloy thereof.

6. The organic light-emitting diode display device according to claim 1, further comprising: a plurality of color filters disposed in the conductive black matrix; wherein the conductive black matrix has a grid shape, and the plurality of color filters are placed in the grid shape.

7. The organic light-emitting diode display device according to claim 1, further comprising: a transmissive region corresponding to a region other than the region where the organic light-emitting diode and the conductive black matrix are provided, wherein the transmissive region transmits light from the back surface of the first substrate.

8. The organic light-emitting diode display device according to claim 7, wherein, a part of the organic layer, a part of the second electrode, and a part of the conductive layer are stacked in the transmissive region.

9. The organic light-emitting diode display device according to claim 1, further comprising: a thin-film transistor connected to the first electrode of the organic light-emitting diode.

10. The organic light-emitting diode display device according to claim 1, wherein, the second electrode is connected to a cathode power line.

11. The organic light-emitting diode display device according to claim 1, further comprising: a connection pattern overlapping a part of the first electrode; and a repair line connected to the connection pattern, wherein the repair line is electrically connected to another first electrode adjacent to the first electrode.

12. An organic light-emitting diode display device, comprising: a first substrate and a second substrate facing each other; An organic light-emitting diode, which includes a first electrode, an organic layer, and a second electrode and is disposed above the first substrate; A conductive layer, which contacts the second electrode; A conductive black matrix, which is disposed above the surface of the second substrate facing the first substrate; And A conductive filling material, which electrically connects the conductive layer and the conductive black matrix, wherein the second electrode is entirely in direct contact with the conductive layer and the conductive layer has a higher refractive index than the second electrode, wherein the first electrode includes a first anode electrode, a second anode electrode, and an anode connection electrode configured to be integrated, wherein the anode connection electrode branches to the first anode electrode and the second anode electrode, and a first repair portion is a portion overlapping a part of the connection region between the first anode electrode and the second anode electrode.

13. The organic light-emitting diode display device according to claim 12, further including: A plurality of color filters disposed in the conductive black matrix, wherein the conductive black matrix has a grid shape and the plurality of color filters are placed in the grid shape.

14. The organic light-emitting diode display device according to claim 13, wherein, The conductive black matrix is connected to a cathode power line.

15. The organic light-emitting diode display device according to claim 12, further including: A transmissive region, which corresponds to a region other than the region where the organic light-emitting diode and the conductive black matrix are disposed, wherein a part of the organic layer, a part of the second electrode, and a part of the conductive layer are stacked in the transmissive region.

16. The organic light-emitting diode display device according to claim 12, wherein, The second electrode is connected to a cathode power line.

17. The organic light-emitting diode display device according to claim 12, further including: A connection pattern overlapping a part of the first electrode; And A repair line connected to the connection pattern, wherein the repair line is electrically connected to another first electrode adjacent to the first electrode.

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