Level shifting circuit
By using two power supplies and an intermediate circuit to limit the operating voltage of the MOSFET, the problem of voltage rating limitations of high-voltage MOSFETs in existing level conversion circuits is solved, achieving higher operating frequencies and smaller circuit areas.
CN112688682BActive Publication Date: 2026-07-10SHANGHAI HUALI MICROELECTRONICS CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI HUALI MICROELECTRONICS CORP
- Filing Date
- 2020-12-25
- Publication Date
- 2026-07-10
Smart Images
Figure CN112688682B_ABST
Abstract
The application discloses a level conversion circuit, comprising: an input end, an output end, two power supplies, two pull-down NMOS tubes, two pull-up PMOS tubes, and an inverter, wherein the input end is used for inputting a signal working in a first voltage domain range, the output end is used for outputting a signal working in a second voltage domain range, and the second voltage domain is different from the first voltage domain, characterized in that the two power supplies are a first power supply and a second power supply respectively, and the voltage of the first power supply is higher than that of the second power supply; the level conversion circuit further comprises an intermediate circuit, the intermediate circuit is arranged between the two pull-down NMOS tubes and the two pull-up PMOS tubes, the working voltages of the two pull-down NMOS tubes and the two pull-up PMOS tubes are not greater than Vmax, and Vmax is the higher value in the second power supply voltage and the voltage difference between the first power supply and the second power supply.
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