Display device, manufacturing method thereof, and drive substrate
By introducing an insulating layer to separate the first reflective electrode and the first electrode layer in a silicon-based micro OLED display device, the problem of reflective metal anode patterning process is solved, and a display device with high brightness and high light efficiency is realized, reducing manufacturing Cost and manufacturing difficulty.
Patent Information
- Application Number
- CN201980001460.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2019-08-23
- Publication Date
- 2025-01-10
- Estimated Expiration
- 2040-05-11
AI Technical Summary
When manufacturing a silicon-based micro OLED display device, the patterning process of the reflective metal anode is difficult to accurately control, resulting in high manufacturing cost and high difficulty, and affecting the brightness and light output efficiency.
By introducing an insulating layer into the display device, the first reflective electrode is separated from the first electrode layer, so that the first reflective electrode is integrated into the driving substrate, and the light-transmitting insulating layer is used to reflect light from the light-emitting element almost without loss. , reduce production difficulty and cost.
High brightness and high light efficiency are achieved, the manufacturing cost and manufacturing difficulty of the first reflective electrode are reduced, and the process process is simplified.
Smart Images

Figure CN112703605B_ABST
Abstract
Description
Technical Field
[0001] Embodiments of the present disclosure relate to a display device, a manufacturing method thereof, and a driving substrate. Background Art
[0002] With the increasing advancement of Virtual Reality (VR) and Augmented Reality (AR) technologies, display devices suitable for VR / AR are also developing in the direction of miniaturization, high pixel density (PPI), fast response and high color gamut. Silicon-based micro-display OLED panels are one of the prominent directions. Although silicon-based micro-display OLED started late, it is becoming a new focus in the display field with its advantages of miniaturization and high PPI. Summary of the invention
[0003] Embodiments of the present disclosure relate to a display device, a manufacturing method thereof, and a driving substrate.
[0004] According to a first aspect of the present disclosure, a display device is provided, comprising:
[0005] substrate substrate;
[0006] A display area, wherein the display area includes a plurality of sub-pixels located on the substrate, each sub-pixel including:
[0007] a first reflective electrode;
[0008] a light-emitting element located on the first reflective electrode, the light-emitting element comprising a first electrode layer, an organic light-emitting functional layer and a second electrode layer sequentially stacked on the first reflective electrode, the first electrode layer being a transparent electrode layer, the organic light-emitting functional layer comprising an electron injection layer, an electron transport layer, a light-emitting layer, a hole injection layer and a hole transport layer; and
[0009] an insulating layer, located between the first reflective electrode and the first electrode layer, the insulating layer being light-transmissive so that light emitted by the organic light-emitting functional layer can pass through it and reach the first reflective electrode to be reflected by the first reflective electrode;
[0010] a pixel circuit, located on the base substrate and comprising a driving transistor, the driving transistor comprising a semiconductor layer, a source electrode, and a drain electrode, one of the source electrode and the drain electrode and the first reflective electrode being electrically connected to each other, the semiconductor layer being located in the base substrate; and
[0011] A storage capacitor located on the substrate, configured to store a data signal;
[0012] A peripheral area surrounding the display area and comprising:
[0013] a plurality of second reflective electrodes located on the base substrate; and
[0014] A light blocking layer is arranged on a side of the plurality of second reflective electrodes away from the base substrate.
[0015] According to a second aspect of the present disclosure, a method for manufacturing a display device is provided, wherein the display device comprises a display area and a peripheral area surrounding the display area, and the manufacturing method comprises:
[0016] providing a substrate base plate;
[0017] A plurality of sub-pixels are formed on the base substrate, wherein the plurality of sub-pixels are located in the display area, and the formation of the sub-pixels includes:
[0018] forming a first reflective electrode;
[0019] forming a light-emitting element on the first reflective electrode, the light-emitting element comprising a first electrode layer, an organic light-emitting functional layer and a second electrode layer sequentially stacked on the first reflective electrode, the first electrode layer being a transparent electrode layer, and the organic light-emitting functional layer comprising an electron injection layer, an electron transport layer, a light-emitting layer, a hole injection layer and a hole transport layer;
[0020] forming an insulating layer between the first reflective electrode and the first electrode layer, the insulating layer being light-transmissive so that light emitted by the organic light-emitting functional layer can pass therethrough and reach the first reflective electrode to be reflected by the first reflective electrode;
[0021] forming a pixel circuit on the base substrate, the pixel circuit comprising a driving transistor, the driving transistor comprising a semiconductor layer, a source electrode, and a drain electrode, one of the source electrode and the drain electrode being electrically connected to the first reflective electrode, and the semiconductor layer being located in the base substrate; and
[0022] forming a storage capacitor on the substrate, wherein the storage capacitor is configured to store a data signal;
[0023] forming a plurality of second reflective electrodes in the peripheral region; and
[0024] A light blocking layer is formed on a side of the plurality of reflective electrodes away from the base substrate.
[0025] According to a third aspect of the present disclosure, there is provided a driving substrate suitable for driving a light-emitting element to emit light, comprising:
[0026] Substrate substrate,
[0027] A display area, wherein the display area includes a plurality of sub-pixels located on the substrate, each sub-pixel including:
[0028] A first reflective electrode is located on the substrate;
[0029] an insulating layer, located on a side of the first reflective electrode away from the base substrate, the insulating layer having a first surface suitable for forming the light-emitting element, the insulating layer being light-transmissive so that light incident on the insulating layer penetrates therethrough and reaches the first reflective electrode to be reflected by the first reflective electrode;
[0030] a pixel circuit, located on the base substrate and comprising a driving transistor, the driving transistor comprising a semiconductor layer, a source electrode, and a drain electrode, one of the source electrode and the drain electrode and the first reflective electrode being electrically connected to each other, the semiconductor layer being located in the base substrate; and
[0031] A storage capacitor, located on the substrate and configured to store a data signal;
[0032] A peripheral area surrounding the display area and comprising:
[0033] a plurality of second reflective electrodes located on the base substrate; and
[0034] A light blocking layer is arranged on a side of the plurality of second reflective electrodes away from the base substrate. BRIEF DESCRIPTION OF THE DRAWINGS
[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present invention, but are not intended to limit the present invention.
[0036] FIG. 1( a ) is a schematic diagram showing the arrangement of a display device on a silicon wafer provided by an embodiment of the present disclosure;
[0037] FIG1( b ) is a schematic diagram of various functional areas in a display device provided in an embodiment of the present disclosure;
[0038] Figure 2 A partially enlarged cross-sectional schematic diagram of a sub-pixel of a display device provided in an embodiment of the present disclosure;
[0039] Figure 3 A partially enlarged cross-sectional schematic diagram of a sub-pixel of a display device provided in another embodiment of the present disclosure;
[0040] Figure 4 A partially enlarged cross-sectional schematic diagram of a sub-pixel of a display device provided in yet another embodiment of the present disclosure;
[0041] Figure 5 A partially enlarged cross-sectional schematic diagram of a sub-pixel of a display device provided in yet another embodiment of the present disclosure;
[0042] Figure 6(a) and 6(b) Two different relative position relationships between the first electrode layer and the first reflective electrode provided in the embodiments of the present disclosure are respectively shown;
[0043] Figure 7 A schematic cross-sectional view of a display device provided in an embodiment of the present disclosure;
[0044] FIG8( a ) is a circuit diagram of a display device provided in an embodiment of the present disclosure;
[0045] FIG8( b ) is a partial circuit diagram of a display device provided in an embodiment of the present disclosure;
[0046] FIG9( a ) is a schematic diagram of the structure of a display device provided in an embodiment of the present disclosure;
[0047] FIG9( b ) is a schematic cross-sectional view of a display device provided in an embodiment of the present disclosure;
[0048] Fig.10 A flow chart of a method for forming a sub-pixel of a display device provided in an embodiment of the present disclosure;
[0049] Figures 11 to 14 A schematic cross-sectional view of a substrate in each step of a method for forming a sub-pixel of a display device provided in an embodiment of the present disclosure;
[0050] Figures 15 to 17 A schematic cross-sectional view of a substrate in each step of a method for forming a sub-pixel of a display device provided by another embodiment of the present disclosure;
[0051] Fig.18 A schematic diagram of the structure of an organic light-emitting functional layer provided in an embodiment of the present disclosure. DETAILED DESCRIPTION
[0052] In order to make the purpose, technical solution and advantages of the embodiment of the present invention clearer, the technical solution of the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, not all of the embodiments. Based on the described embodiment of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0053] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons of ordinary skill in the field to which the present invention belongs. The words "first", "second" and similar words used in the patent application specification and claims of the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantity limitation, but indicate the existence of at least one. Words such as "include" or "comprise" and similar words mean that the elements or objects appearing before "include" or "comprise" include the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0054] Generally, organic electroluminescent devices (OLEDs) include bottom-emitting devices, top-emitting devices, and double-sided emitting devices. The light-emitting element of an organic electroluminescent device generally includes a cathode, an anode, and an organic light-emitting functional layer disposed therebetween. When the cathode material is a transparent or semi-transparent conductive material and the anode is a reflective metal, the OLED is a top-emitting device, and the substrate can be a transparent, semi-transparent, or non-transparent substrate.
[0055] Micro OLED is a type of silicon-based display. Due to the excellent electrical properties and extremely fine device size of silicon-based devices, it is conducive to achieving high integration. Usually, in the process of manufacturing silicon-based micro OLED, the anode including the reflective metal is manufactured by the panel factory, and the part below the reflective metal is manufactured by the wafer factory. However, when making reflective metal, it is difficult for the panel factory to accurately control the pattern of the reflective metal through the etching process, which not only increases the manufacturing cost and difficulty of silicon-based micro OLED, but also affects the brightness of the light.
[0056] The embodiment of the present disclosure provides a display device, including: a substrate, a display area, and a peripheral area surrounding the display area. The display area includes: a plurality of sub-pixels located on the substrate, each sub-pixel includes: a first reflective electrode; a light-emitting element located on the first reflective electrode, the light-emitting element includes a first electrode layer, an organic light-emitting functional layer, and a second electrode layer sequentially stacked on the first reflective electrode, the first electrode layer is a transparent electrode layer, and the organic light-emitting functional layer includes an electron injection layer, an electron transport layer, a light-emitting layer, a hole injection layer, and a hole transport layer. The display area also includes: an insulating layer located between the first reflective electrode and the first electrode layer, the insulating layer is light-transmissive so that the light emitted by the organic light-emitting functional layer penetrates therethrough and reaches the first reflective electrode to be reflected by the first reflective electrode; a pixel circuit located on the substrate and including a driving transistor, the driving transistor including a semiconductor layer, a source electrode, and a drain electrode, one of the source electrode and the drain electrode is electrically connected to the first reflective electrode, and the semiconductor layer is located in the substrate; and a storage capacitor located on the substrate, configured to store data signals. In this embodiment, the peripheral region includes: a plurality of second reflective electrodes located on the base substrate; and a light blocking layer disposed on a side of the plurality of second reflective electrodes away from the base substrate.
[0057] In the display device of this embodiment, the first reflective electrode and the first electrode layer are separated from each other by an insulating layer. In this way, it is possible to integrate the first reflective electrode into the driving substrate manufactured by the wafer factory, which not only reduces the manufacturing cost and difficulty of the first reflective electrode, but also ensures the high light brightness and high light efficiency of the display device. In this article, "driving substrate" refers to the stacked structure located below the first electrode layer (excluding the first electrode layer) in the display device, and because the stacked structure contains pixel circuits such as driving transistors, it is suitable for driving the light-emitting element to emit light.
[0058] FIG. 1( a) is a schematic diagram of the arrangement of the display device provided in the embodiment of the present disclosure on the silicon wafer, that is, a wafer map. The wafer map schematically shows the number and arrangement of the display devices on the silicon wafer. It is understandable that the number and arrangement of the display devices shown in the figure are for illustrative purposes only and are not a limitation on the embodiment of the present disclosure. FIG. 1( b) is a schematic diagram of the functional areas in the display device provided in the embodiment of the present disclosure. As shown in FIG. 1( b), the display device includes a display area (Active area, referred to as AA), a peripheral area (Edge area, referred to as EA) surrounding the display area, and a binding area (Bonding area, referred to as BA). The display area AA includes a plurality of pixel units PX arranged in an array. Each pixel unit PX includes a plurality of sub-pixels SP. For example, a pixel unit may include 3, 4, 5 or more sub-pixels, which needs to be designed and determined according to the actual application environment and is not limited here. As shown in FIG. 1( b), the display device also includes a plurality of pads located in the binding area BA, and the pads are used to provide a channel for signal input or output to the display device. Figure 7 Schematic diagram of a cross-section of a display device provided by an embodiment of the present disclosure. Figure 7 As shown, the display device includes three sub-pixels, namely, a red sub-pixel SP1, a green sub-pixel SP2 and a blue sub-pixel SP3. The colors of the sub-pixels in the display device are only illustrative, and may also include other colors such as blue, white, etc.
[0059] Figure 2 This is a partial enlarged cross-sectional schematic diagram of a sub-pixel of a display device provided by an embodiment of the present disclosure. Figure 2 and Figure 7 As shown, for example, each sub-pixel includes a first reflective electrode 106 and a light emitting element 130 located on the first reflective electrode 106 , and the light emitting element 130 includes a first electrode layer 122 , an organic light emitting functional layer 124 and a second electrode layer 126 sequentially stacked on the first reflective electrode 106 .
[0060] For example, continue to refer to Figure 2 and Figure 7Each sub-pixel further includes an insulating layer 103 located between the first reflective electrode 106 and the first electrode layer 122. The insulating layer 103 is light-transmissive so that the light emitted by the organic light-emitting functional layer 124 can penetrate therethrough and reach the first reflective electrode 106 to be reflected by the first reflective electrode 106. The first reflective electrode 106 and the first electrode layer 122 are separated by the insulating layer 103. In this way, when the first reflective electrode 106 is manufactured, the first reflective electrode 106 can be integrated into the driving substrate manufactured by the wafer factory, thereby reducing the manufacturing cost and manufacturing difficulty of the first reflective electrode 106. Moreover, when the light L emitted by the organic light-emitting functional layer 124 is incident on the first surface 1031 of the insulating layer 103 close to the organic light-emitting functional layer 124, since the insulating layer 103 has light-transmissive properties, the light L can penetrate the first surface 1031 of the insulating layer 103, and be emitted from the second surface 1032 of the insulating layer 103 close to the first reflective electrode 106 and reach the first reflective electrode 106. The first reflective electrode 106 has a reflective property, and reflects the light L incident thereon back to the light emitting element 130, and finally emits from the light emitting element 130. In this embodiment, due to the light transmittance of the insulating layer 103, the light reflected by the first reflective electrode 106 is emitted outward with almost no loss, thereby ensuring high light output brightness and high light output efficiency of the display device. For example, the insulating layer 103 in the three sub-pixels is formed as one piece to facilitate manufacturing and reduce the difficulty of the manufacturing process.
[0061] In at least some embodiments, the insulating layer is provided with a conductive path for electrically connecting the first electrode layer and the first reflective electrode. Two examples of the conductive path are provided below.
[0062] For example, Figure 2As shown, the insulating layer 103 includes a via 110 filled with a metal member 108, and the first reflective electrode 106 is electrically connected to the first electrode layer 122 through the metal member 108. In this way, by forming a conductive channel between the first reflective electrode 106 and the first electrode layer 122 in the insulating layer 103, it is beneficial to transmit the signal provided by the pixel circuit in the display device to the first electrode layer 122 through the first reflective electrode 106. In this way, it is not only beneficial to realize the control of the light-emitting element by the pixel circuit, but also to make the structure of the display device more compact, which is beneficial to the miniaturization of the device. Further, for example, the metal member 108 is made of a metal material, such as tungsten metal, and the via filled with tungsten metal is also called a tungsten via (W-via). For example, in the case where the thickness of the insulating layer 103 is large, forming a tungsten via in the insulating layer 103 can ensure the stability of the conductive path, and since the process of making tungsten vias is mature, the surface flatness of the obtained insulating layer 103 is good, which is beneficial to reduce the contact resistance between the insulating layer 103 and the first electrode layer 122. It is understandable that the tungsten via is not only suitable for realizing the electrical connection between the insulating layer 103 and the first electrode layer 122, but also suitable for the electrical connection between the first reflective electrode 106 and the pixel circuit, and the electrical connection between other wiring layers. The electrical connection between the first reflective electrode 106 and the pixel circuit will be described in detail later.
[0063] For example, Figure 3 As shown, the insulating layer 203 includes a first opening 210 exposing the first reflective electrode 206 , and at least a portion 222 a of the first electrode layer 222 is located in the first opening 210 and is electrically connected to the first reflective electrode 206 . Figure 2 In the embodiment, the first electrode layer 122 and the first reflective electrode 106 are electrically connected through the metal member 108, and there is no direct contact between the two. Figure 3 In the embodiment, a portion 222a of the first electrode layer 222 is filled in the first opening 210 of the insulating layer 203 and is in direct contact with the first reflective electrode 206 to form an electrical connection. Figure 2 compared to, Figure 3 The first opening 210 of the middle insulating layer 203 does not need to be filled with metal components, so the manufacturing process is simpler. In addition, since the first electrode layer 222 and the first reflective electrode 206 are in direct contact with each other, the thickness of the display device is reduced, which is conducive to the thinning of the display device.
[0064] In at least some embodiments, the first reflective electrode and the first electrode layer are insulated from each other. Figure 4As shown, the entire first reflective electrode 306 is separated from the first electrode layer 322 by the insulating layer 303 and is insulated from the first electrode layer 322. That is, there is no electrical connection between the first electrode layer 322 and the first reflective electrode 306. In this way, when manufacturing the first reflective electrode 306, there is no need to change the position or connection relationship between the wiring layer and the pixel circuit in the existing display device, and the purpose of the present disclosure can also be achieved. In this case, the pixel circuit including the driving transistor T1 is electrically connected to the first electrode layer 322 through the via 310, which is used to control the light emission of the light-emitting element.
[0065] For example, Figure 2 As shown, the display device further includes at least one wiring layer M1, and the at least one wiring layer M1 is located between the first reflective electrode 106 and the base substrate 100. For example, the wiring layer M1 includes a metal layer (shaded portion), and the gate electrode connection portion 102g, the source electrode connection portion 102s, and the drain electrode connection portion 102d are located in the same metal layer.
[0066] For example, Figure 2 As shown, the first reflective electrode 106 also includes a metal layer 105, and the material of the metal layer 105 is, for example, aluminum or an aluminum alloy, such as an aluminum-copper alloy. Since aluminum or an aluminum-copper alloy has a low resistance and a high reflectivity, it can improve the light output brightness and light output efficiency of the display device. For example, the thickness of the metal layer 105 is between 10nm and 1000nm. If the thickness is too low, the reflection effect is not obvious. If the thickness is too high, the overall thickness of the panel is large. The first reflective electrode 106 can be regarded as the wiring layer M2 of the display device. Figure 2 As shown, when the display device includes multiple wiring layers, the wiring layer M2 where the first reflective electrode 106 is located is the uppermost wiring layer, which can simplify the manufacturing of the first reflective electrode 106 without destroying the bottom structure of the display device.
[0067] For example, Figure 2 As shown, the first reflective electrode 106 further includes at least one protective layer 104, which is stacked with the metal layer 105 and is located on the side of the metal layer 105 close to the base substrate 100. That is, the protective layer 104 is located on the surface of the metal layer 105 close to the base substrate 100. In this way, the protective layer 104 can prevent the metal layer 105 from being oxidized. For example, the material of the protective layer is a conductive material, such as titanium nitride (TiN). Since the protective layer 104 is not provided on the surface of the metal layer 105 close to the first electrode layer 122, the light emitted by the organic light-emitting functional layer 124 and passing through the first electrode layer 122 and the insulating layer 103 can be directly incident on the surface of the metal layer 105, thereby reducing the loss of light at the interface and improving the light reflection efficiency and the light output brightness of the display device.
[0068] In the embodiment of the present disclosure, the configuration and quantity of the protective layer 104 are not limited to Figure 2 The protective layer may not be provided in the first reflective electrode. Figure 3 and Figure 4 As shown, the first reflective electrode 106, 306 does not include any protective layer, but only includes a metal layer. In the case of providing a protective layer, the protective layer can be provided on a single side of the metal layer. For example, the protective layer is only provided on one side of the metal layer 105 close to the substrate 100 (eg, Figure 2 ), or, it is only arranged on one side of the metal layer 105 away from the substrate 100 (not shown). In the case of providing two protective layers, they can be arranged on both sides of the metal layer. Figure 5 As shown, the first reflective electrode 406 includes two protective layers 404 and a metal layer 405 located therebetween. The two protective layers 404 are located on the side of the metal layer 405 close to the base substrate 400 and the side of the metal layer 405 away from the base substrate 400, respectively. In this case, the insulating layer 403 includes a via 410 and a metal member 408 located in the via. The first electrode layer 422 is electrically connected to the first reflective electrode 406 including the two protective layers 404 and the metal layer 405 through the metal member 408. It can be understood that the above protective layer can also be applied to other wiring layers. For example, Figure 2 As shown, a protective layer is provided on the upper and lower sides of each of the gate electrode connection portion 102g, the source electrode connection portion 102s and the drain electrode connection portion 102d, which can effectively prevent these electrode connection portions from being oxidized and improve the conductive performance.
[0069] For example, Figure 7 As shown, the insulating layer 103 further includes a second opening 114 exposing the pad 112 . The second opening 114 is provided to facilitate electrical connection and signal communication between the pad 112 and an external circuit. Figure 7 The display device uses Figure 2 The sub-pixel structure shown in FIG. 1 is understood to be Figures 3 to 5 The sub-pixel structures shown can be applied to Figure 7 The display device will not be described in detail here.
[0070] In at least some embodiments, the relative position relationship between the first electrode layer and the first reflective electrode can be determined according to actual needs. Figure 2As shown in FIG. 6( a), the orthographic projection of the first electrode layer 122 on the plane where the base substrate 100 is located is located in the orthographic projection of the first reflective electrode 106 on the plane where the base substrate 100 is located. That is, the area of the orthographic projection of the first electrode layer 122 is smaller than the area of the orthographic projection of the first reflective electrode 106. In this way, almost all of the light passing through the first electrode layer 122 is incident on the first reflective electrode 106 and is reflected, thereby improving the light output efficiency and light output brightness of the display device. It can be understood that the arrangement of the first electrode layer and the first reflective electrode is not limited to Figure 2 and the situation shown in Figure 6(a), or vice versa. Figure 3 As shown, the orthographic projection of the first reflective electrode 206 on the plane where the base substrate 100 is located is located in the orthographic projection of the first electrode layer 222 on the plane where the base substrate 200 is located. Figure 4 As shown in FIG. 6( b ), the orthographic projection of the first reflective electrode 306 on the plane where the base substrate 300 is located partially overlaps with the orthographic projection of the first electrode layer 322 on the plane where the base substrate 200 is located. This positional relationship does not change the electrical connection relationship between the wiring layer and the driving transistor in the existing display device, so that the manufacturing process of the first reflective electrode 306 is simple.
[0071] In at least some embodiments, the shape of the first reflective electrode is not limited to the rectangle shown in FIG. 6(a) and FIG. 6(b), and may be other regular shapes, such as a circle, an ellipse, a parallelogram, a regular polygon, a trapezoid, etc. Alternatively, the first reflective electrode may also have an irregular shape, such as a folded line, a curved shape, a honeycomb shape, etc. For example, the first reflective electrode 306 in FIG. 9(a) is in a honeycomb shape. In a plane parallel to the substrate, the shape of the first electrode layer may be the same as or different from the shape of the first reflective electrode. For example, as shown in FIG. 6(a), in a plane parallel to the substrate 100, the shape of the first reflective electrode 106 is the same as the shape of the first electrode layer 122. In this way, the reflection of the first reflective electrode 106 can ensure that the brightness of the emitted light is more uniform. For another example, the shape of the first electrode layer is a circle, and the shape of the first reflective electrode is a rectangle. Further, in this case, the orthographic projection of the circular first electrode layer on the plane where the substrate is located is located in the orthographic projection of the rectangular first reflective electrode on the plane where the substrate is located. In this way, almost all the light passing through the circular first electrode layer is incident on the rectangular first reflective electrode and is reflected, thereby improving the light output efficiency and light output brightness of the display device.
[0072] In at least some embodiments, the organic light-emitting functional layer may include a light-emitting layer and a multilayer structure consisting of one or more film layers including a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, an electron blocking layer, and a hole blocking layer. Fig.18This is a schematic diagram of the structure of the organic light-emitting functional layer provided in the embodiment of the present disclosure. Fig.18 As shown, the organic light-emitting functional layer 124 includes an electron injection layer EIL, an electron transport layer ETL, a light-emitting layer OL, a hole injection layer HTL and a hole transport layer HIL from top to bottom. These layers can be made of materials and structures known in the art and will not be discussed in detail here. The organic light-emitting functional layer 124 can be made of organic materials, such as Figure 2 As shown, under the voltage driving of the first electrode layer 122 and the second electrode layer 126, light is emitted according to the required grayscale by utilizing the light-emitting characteristics of the organic material.
[0073] In at least some embodiments, each sub-pixel further includes a pixel circuit, which includes a driving transistor. FIG. 8(a) is a circuit diagram of a display device provided by an embodiment of the present disclosure. FIG. 8(b) is a partial circuit diagram of a display device provided by an embodiment of the present disclosure. For example, as shown in FIG. 8(a), in the display area AA, each sub-pixel SP includes a light-emitting element X and a pixel circuit 10 coupled to the light-emitting element X. As shown in FIG. 8(b), each pixel circuit 10 includes a driving transistor M0. The light-emitting element X includes, for example, an OLED. In this way, the positive electrode of the OLED is electrically connected to the second terminal D of the driving transistor M0, and the negative electrode of the OLED is electrically connected to the second power supply terminal VSS. The voltage of the second power supply terminal VSS is generally a negative voltage or a ground voltage VGND (for example, 0V). The driving transistor M0 can be an N-type transistor, and when the current flows from its first terminal S to the second terminal D, the first terminal S can be used as its source electrode and the second terminal D can be used as its drain electrode. When the current flows from its second terminal D to the first terminal S, the second terminal D can be used as its source electrode and the first terminal S can be used as its drain electrode.
[0074] For example, Figure 2 and Figure 7 As shown, the driving transistor T1 in each sub-pixel includes a source electrode S, a drain electrode D and a semiconductor layer (a portion located between the source electrode S and the drain electrode D), and one of the source electrode S and the drain electrode D is electrically connected to the first reflective electrode 106. The semiconductor layer is located in the substrate, and the semiconductor layer is, for example, a channel region formed between the source electrode S and the drain electrode D. For example, Figure 2As shown, the driving transistor T1 includes a gate electrode G, a source electrode S and a drain electrode D. The three electrodes correspond to three electrode connecting parts respectively. For example, the gate electrode G is electrically connected to the gate electrode connecting part 102g, the source electrode S is electrically connected to the source electrode connecting part 102s, and the drain electrode D is electrically connected to the drain electrode connecting part 102d. The drain electrode D of the driving transistor T1 is electrically connected to the first reflective electrode 106 through the drain electrode connecting part 102d. When the driving transistor T1 is in an on state, the electrical signal VDD provided by the power line can be transmitted to the first electrode layer 122 through the drain electrode S, the drain electrode connecting part 102d and the first reflective electrode 106 of the driving transistor T1. Due to the voltage difference formed between the second electrode layer 126 and the first electrode layer 122, an electric field is formed between the two, and the organic light-emitting functional layer 124 emits light under the action of the electric field.
[0075] In at least some embodiments, each sub-pixel further includes a storage capacitor located on the substrate. For example, as shown in FIG8( b), each sub-pixel further includes a storage capacitor Cst located on the substrate, configured to store a data signal. A first end of the storage capacitor Cst is coupled to the gate electrode G of the driving transistor M0, and a second end of the storage capacitor Cst is coupled to the ground terminal GND. In this way, the gate electrode G of the driving transistor T1 can store a high grayscale or low grayscale data signal through the storage capacitor Cst.
[0076] In at least some embodiments, the peripheral region includes a plurality of second reflective electrodes located on the base substrate and a light blocking layer disposed on a side of the plurality of second reflective electrodes away from the base substrate. Figure 7 As shown, a second reflective electrode 216 is provided in the peripheral area EA, and the second reflective electrode 216 has the same structure as the first reflective electrode 106, for example, including a metal layer 215 and a protective layer 214. For example, the metal layer 215 and the metal layer 105 are provided in the same layer, and the protective layer 214 and the protective layer 104 are provided in the same layer, which is conducive to simplifying the manufacturing process. A light blocking layer 240 is provided on the side of the second reflective electrode 216 away from the base substrate 100, which is used to block the light reflected by the second reflective electrode 216 and reduce the light leakage from the display area to the peripheral area. For example, the light blocking layer 240 includes a laminated structure of color filter layers of at least two colors. For example, the light blocking layer 240 includes a red color filter layer 218 and a green color filter layer 220 that are stacked. In other embodiments, a laminated structure of color filter layers of three colors can also be used. For another example, the light blocking layer includes a black matrix layer, and the black matrix layer includes a black resin material, which can also achieve a light shielding effect. When manufacturing the color filter layer in the light blocking layer, it can be completed in the same process step as the color filter layer of the same color in the display area AA, which can reduce the steps of the manufacturing process.
[0077] For example, Figure 7As shown, the display device further includes a first encapsulation layer 132, a color filter layer 134, a second encapsulation layer 136 and a cover plate 138 arranged in the display area AA. For example, the first encapsulation layer 132 is located on the side of the second electrode layer 126 away from the base substrate. The color filter layer 134 is located on the side of the first encapsulation layer 132 away from the base substrate, and includes a red color filter layer R, a green color filter layer G and a blue color filter layer B. The second encapsulation layer 136 and the cover plate 138 are located on the side of the color filter layer 134 away from the base substrate. The specific materials of the first encapsulation layer 132, the color filter layer 134, the second encapsulation layer 136 and the cover plate 138 can be conventional materials in the art, which will not be discussed in detail here. For example, in the peripheral area EA, an encapsulation layer 236 and a cover plate 238 covering the light blocking layer 240 are also provided. For example, the encapsulation layer 236 and the second encapsulation layer 136 are made of the same material and are manufactured in the same process step, and the cover plate 238 and the cover plate 138 are made of the same material and are manufactured in the same process step, so that the steps of the manufacturing process can be reduced.
[0078] FIG. 9(a) is a schematic diagram of the structure of a display device provided by an embodiment of the present disclosure. FIG. 9(b) is a schematic diagram of a cross-sectional view of a display device provided by an embodiment of the present disclosure. For example, as shown in FIG. 9(a) and FIG. 9(b), the display device includes: a first reflective electrode pattern located in the display area AA, the first reflective electrode pattern including a plurality of first reflective electrodes 306 spaced apart from each other. For example, the peripheral area EA includes a sensor area 30, and the display device further includes a plurality of second reflective electrode patterns located in the sensor area 30, the second reflective electrode pattern including a plurality of second reflective electrodes 307 spaced apart from each other.
[0079] In at least some embodiments, the peripheral area further includes a plurality of third reflective electrodes located on the substrate. For example, as shown in FIG. 9( a) and FIG. 9( b), the peripheral area EA further includes a connection electrode area 50, and the display device further includes a third reflective electrode pattern located in the connection electrode area 50, and the third reflective electrode pattern includes a plurality of third reflective electrodes 308 spaced apart from each other.
[0080] In at least some embodiments, the pattern density of the first reflective electrode pattern is the same as the pattern density of the second reflective electrode pattern and / or the pattern density of the third reflective electrode pattern. As shown in FIG9(a), the pattern density of the plurality of first reflective electrodes 306 is the same as the pattern density of the plurality of second reflective electrodes 307, or the pattern density of the plurality of first reflective electrodes 306 is the same as the pattern density of the plurality of third reflective electrodes 308, or the pattern density of the plurality of first reflective electrodes 306, the pattern density of the plurality of second reflective electrodes 307 and the pattern density of the plurality of third reflective electrodes 308 are the same as each other. In this way, over-etching can be avoided when etching the conductive layer. The inventors found that in the process of etching the conductive layer, the display area of the display device needs to form a reflective electrode pattern, and the conductive layer portion of the peripheral area of the organic light emitting diode display device needs to be completely or partially removed, and the pattern density of the display area and the peripheral area is different, resulting in a large difference in the amount of conductive material that needs to be etched away in the display area and the peripheral area per unit area under the same dry etching process. However, the selectivity of the dry etching process is poor, which makes it difficult to control the process film thickness and size uniformity of the first electrode pattern formed at the end, and easily leads to over-etching of the insulating layer under the first electrode pattern. In this embodiment, the pattern density of the second reflective electrode pattern and at least one of the third reflective electrode pattern is made the same as the pattern density of the first reflective electrode pattern, so as to avoid over-etching, thereby improving etching uniformity.
[0081] In at least some embodiments, the peripheral area further includes a light-blocking layer disposed on a side of the plurality of second reflective electrodes and the plurality of third reflective electrode layers that is away from the base substrate. For example, as shown in FIG9(a) and FIG9(b), a light-blocking layer 330 is disposed on a side of the plurality of second reflective electrodes 307 and the plurality of third reflective electrodes 308 that is away from the base substrate, and the light-blocking layer includes a black matrix layer, the material of which is a black resin, which can block the light reflected by the second reflective electrodes 307 and the third reflective electrodes 308 and reduce light leakage from the display area to the peripheral area.
[0082] For example, as shown in FIG. 9( a) and FIG. 9( b), the peripheral area EA further includes a first dummy area 20 surrounding the display area AA, and no reflective electrode is provided in the first dummy area 20. For example, the first dummy area 20 is provided with a first dummy electrode 22. For example, the first dummy electrode 22 in the first dummy area 20 is in the same layer as the plurality of first electrodes 322 in the display area AA to simplify the manufacturing process. In the display area AA, two adjacent first electrodes 322 are separated by a pixel definition layer 323. For example, the organic light-emitting functional layer 324, the second electrode 326, and the encapsulation layer 327 all extend into the first dummy area 20.
[0083] For example, as shown in FIG9( a ) and FIG9( b ), the peripheral area EA further includes a second dummy area 40 surrounding the sensing area 30 , and no reflective electrode is disposed in the second dummy area 40 . For example, the second dummy area 40 is provided with a second dummy electrode 42 .
[0084] For example, as shown in FIG9( a ) and FIG9( b ), the peripheral area EA further includes a third dummy area 60 surrounding the connection electrode area 50 , and no reflective electrode is disposed in the third dummy area 60 . For example, the third dummy area 60 is provided with a third dummy electrode 62 .
[0085] In at least some embodiments, the peripheral area of the display device further includes a voltage control circuit. Figure 8(a) and 8(b) As shown, the display device may further include: a plurality of voltage control circuits 12 located in the peripheral area of the array substrate, and the first electrode of the driving transistor M0 in the pixel circuit 10 is coupled to the common voltage control circuit 12. The voltage control circuit is configured to output an initialization signal Vinit to the first electrode of the driving transistor M0 in response to the reset control signal RE to control the corresponding light-emitting element X to reset; and to output a first power supply signal VDD to the first electrode of the driving transistor in response to the light-emitting control signal EM to drive the light-emitting element X to emit light.
[0086] In at least some embodiments, the first electrode layer is a transparent electrode layer. For example, the first electrode layer may be made of a light-transmitting material or a semi-transmitting material. Similarly, the second electrode layer may also be a transparent electrode layer, for example, made of a light-transmitting material or a semi-transmitting material. The light-transmitting material is, for example, a transparent conductive oxide, including but not limited to indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (CTO), stannum dioxide (SnO2) and zinc oxide (ZnO). For example, the first electrode layer is made of ITO. Since ITO material has a high work function compared to ordinary molybdenum and titanium metals, it is suitable for use as an OLED anode material, and since ITO has a high transmittance, the light emitted by the organic light-emitting functional layer can pass through the first electrode layer almost without loss, further improving the light output efficiency and brightness of the display device. In a silicon-based micro OLED display device, one of the first electrode layer and the second electrode layer is used as an anode, and the other is used as a cathode.
[0087] In at least some embodiments, the insulating layer is made of a light-transmitting material, such as silicon nitride (SiNx), silicon oxide (SiOx), aluminum oxide (Al2O3), aluminum nitride (AlN) or other suitable materials. For example, the insulating layer may be a single layer or multiple layers.
[0088] In at least some embodiments, the substrate is a silicon-based substrate. The manufacturing process of the silicon-based substrate is mature, the performance is stable, and it is suitable for manufacturing highly integrated micro display devices. For example, the display device is a silicon-based micro organic light-emitting diode display device.
[0089] In the display device of this embodiment, the light-emitting element including the first electrode layer 122, the organic light-emitting functional layer 124 and the second electrode layer 126, the first encapsulation layer 132, the color filter layer 134, the second encapsulation layer 136 and the cover plate 138 are all manufactured in the panel factory. In addition, the insulating layer 103 above the pad 112 is also etched in the panel factory to expose the pad and make it bonded to the flexible circuit board (FPC bonding) or wire bonding (Wire bonding) process. Therefore, by adopting the display device designed by the present disclosure, the first reflective electrode 106 and the insulating layer 103 can be manufactured by the wafer factory, and a driving substrate suitable for forming a light-emitting element can be prepared, which not only reduces the difficulty of manufacturing the first reflective electrode, but also facilitates the subsequent process of the panel factory.
[0090] Another embodiment of the present disclosure provides a method for manufacturing a display device, wherein the display device includes a display area and a peripheral area surrounding the display area. The manufacturing method includes: providing a base substrate; forming a plurality of sub-pixels on the base substrate, wherein the plurality of sub-pixels are located in the display area. The formation of the sub-pixel includes: forming a first reflective electrode; forming a light-emitting element on the first reflective electrode, the light-emitting element includes a first electrode layer, an organic light-emitting functional layer and a second electrode layer stacked on the first reflective electrode in sequence, the first electrode layer is a transparent electrode layer, the organic light-emitting functional layer includes an electron injection layer, an electron transport layer, a light-emitting layer, a hole injection layer and a hole transport layer; forming an insulating layer between the first reflective electrode and the first electrode layer, the insulating layer is light-transmissive so that the light emitted by the organic light-emitting functional layer penetrates therethrough and reaches the first reflective electrode to be reflected by the first reflective electrode; forming a pixel circuit on the substrate, the pixel circuit includes a driving transistor, the driving transistor includes a semiconductor layer, a source electrode, and a drain electrode, one of the source electrode and the drain electrode is electrically connected to the first reflective electrode, and the semiconductor layer is located in the substrate; and forming a storage capacitor on the substrate, the storage capacitor is configured to store data signals. The manufacturing method also includes: forming a plurality of second reflective electrodes in the peripheral area; and forming a light-blocking layer on the side of the plurality of reflective electrodes away from the substrate.
[0091] In this embodiment, the arrangement and specific structure or materials of the first electrode layer, the light-emitting element, the second electrode layer, the insulating layer, the first reflective electrode, the second reflective electrode, the pixel circuit, and the storage capacitor can refer to the contents in the previous embodiments and will not be repeated here.
[0092] In the existing display device manufacturing method, the reflective metal is usually manufactured in the panel factory, which increases the difficulty and cost of the process manufacturing. In this embodiment, the first reflective electrode and the first electrode layer are separated by an insulating layer, so that the stacked structure including the first reflective electrode and the insulating layer in the display device can be independently manufactured in the wafer factory, and the stacked structure has a surface suitable for manufacturing light-emitting elements, thereby reducing the difficulty of manufacturing the first reflective electrode and ensuring high light extraction efficiency and high light extraction brightness of the display device.
[0093] like Fig.10 As shown, another embodiment of the present disclosure provides a method for forming a sub-pixel, comprising:
[0094] Step S1: providing a substrate.
[0095] Step S2: forming a light reflecting layer and an insulating layer on the base substrate; and
[0096] Step S3: forming a light-emitting element on the insulating layer, the light-emitting element comprising a first electrode layer, a light-emitting layer and a second electrode layer sequentially stacked on the light-reflecting layer, the first electrode layer being a transparent electrode layer; wherein the insulating layer is light-transmissive so that light emitted by the light-emitting layer can penetrate therethrough and reach the light-reflecting layer to be reflected by the light-reflecting layer.
[0097] For example, the present disclosure provides a Figure 2 A method for forming a sub-pixel of a display device, the method comprising:
[0098] Step 101 : providing a base substrate, and forming a first reflective electrode 106 and an insulating layer 103 on the base substrate 100 .
[0099] For example, a first reflective electrode 106 is formed on the base substrate 100. For example, the first reflective electrode 106 includes a metal layer 105 and a protective layer 104. The metal layer 105 and the protective layer 104 can be formed by using a patterning process. In the embodiment of the present disclosure, the patterning process includes but is not limited to a photolithography process. For example, the photolithography process includes coating a photoresist on a pre-patterned material, exposing the photoresist using a mask, developing the photoresist to remove part of the photoresist, etching a part of the pre-patterned material, and stripping off the remaining photoresist. Next, an insulating layer 103 is formed on the first reflective electrode 106. For example, the formation of the insulating layer 103 includes: forming a via 110 in the insulating layer 103, such as Fig.11 As shown; and filling the metal member 108 in the via 110, as Fig.12As shown. So far, a driving substrate having a first surface 1031 suitable for forming a light-emitting element is formed. It can be understood that in addition to the first reflective electrode and the insulating layer, other elements such as pixel circuits need to be formed on the substrate, and the specific preparation process will not be discussed in detail here.
[0100] Step 102 : forming a first electrode layer 122 on the first surface 1031 of the insulating layer 103 .
[0101] For example, Fig.13 As shown, a first electrode material 150 is formed on a side of the insulating layer 103 away from the base substrate 100; then, the first electrode material 150 is patterned to form a first electrode layer 122, as shown in FIG. Fig.14 The first electrode layer 122 covers the via hole 110 and contacts the metal component 108 . The first electrode layer 122 is electrically connected to the first reflective electrode 106 through the metal component 108 .
[0102] Step 103: An organic light-emitting functional layer 124 and a second electrode layer 126 are sequentially formed on a side of the first electrode layer 122 away from the base substrate. Figure 2 shown.
[0103] In the manufacturing method of this embodiment, step 101 can be performed in a wafer fab, and a driving substrate having a first surface 1031 suitable for forming a light-emitting element is obtained. Then, steps 102 and 103 are performed in a panel fab, and the panel fab continues to manufacture and package the light-emitting element on the driving substrate obtained in step 101, thereby obtaining the final display device. Compared with the manufacturing method of the existing display device, since the first reflective electrode can be manufactured in a wafer fab, not only the manufacturing difficulty and manufacturing cost of the first reflective electrode are reduced, but also the high light extraction efficiency of the display device is ensured.
[0104] For example, another embodiment of the present disclosure provides a Figure 3 A method for forming a sub-pixel, the method comprising:
[0105] Step 201: Fig.15 As shown, a base substrate is provided, and a first reflective electrode 206 and an insulating layer 203 are formed on the base substrate 200 .
[0106] For example, a first reflective electrode 206 is formed on a base substrate 200 on which a pixel circuit is formed. For example, the first reflective electrode 106 only includes a metal layer. Next, an insulating layer 203 is formed on the first reflective electrode 206. For example, the formation of the insulating layer 203 includes: forming a first opening 210 in the insulating layer 203, and the first opening 210 exposes the first reflective electrode 206. Fig.15As shown, a portion of the surface of the first reflective electrode 206 away from the base substrate 200 is exposed by the first opening 210. Thus, a driving substrate having a first surface 2031 suitable for forming a light emitting element is formed.
[0107] Step 202 : forming a first electrode layer 222 on the first surface 2031 of the insulating layer 203 .
[0108] For example, Fig.16 As shown in FIG. 1 , a first electrode material 250 is formed on a side of the insulating layer 203 away from the base substrate 200. Then, the first electrode material 250 is patterned to form a first electrode layer 222, as shown in FIG. Fig.17 The first electrode layer 222 covers the first opening 210 , and at least a portion 222 a of the first electrode layer 222 is formed in the first opening 210 and is electrically connected to the first reflective electrode 206 .
[0109] Step 203: forming a light emitting layer 224 and a second electrode layer 226 in sequence on a side of the first electrode layer 222 away from the substrate, such as Figure 3 shown.
[0110] In the manufacturing method of this embodiment, step 201 can be performed in a wafer fab, and a driving substrate having a first surface 2031 suitable for forming a light-emitting element is obtained. Then, steps 202 and 203 are performed in a panel fab, and the panel fab continues to manufacture and package the light-emitting element on the driving substrate obtained in step 201, thereby obtaining a final display device. Compared with the manufacturing method of the existing display device, since the first reflective electrode can be manufactured in a wafer fab, not only the manufacturing difficulty and manufacturing cost of the first reflective electrode are reduced, but also the high light extraction efficiency of the display device is ensured.
[0111] Another embodiment of the present disclosure provides a driving substrate suitable for driving a light-emitting element to emit light, comprising: a substrate substrate, a display area and a peripheral area. The display area includes a plurality of sub-pixels located on the substrate substrate. Each sub-pixel includes: a first reflective electrode located on the substrate substrate; an insulating layer located on the side of the first reflective electrode away from the substrate substrate, the insulating layer having a first surface suitable for forming the light-emitting element, the insulating layer being light-transmissive so that light incident on the insulating layer penetrates therethrough and reaches the first reflective electrode to be reflected by the first reflective electrode; a pixel circuit located on the substrate substrate and including a driving transistor, the driving transistor including a semiconductor layer, a source electrode, and a drain electrode, one of the source electrode and the drain electrode being electrically connected to the first reflective electrode, the semiconductor layer being located in the substrate substrate; and a storage capacitor located on the substrate substrate and configured to store data signals. The peripheral area surrounds the display area and includes a plurality of second reflective electrodes located on the substrate substrate; and a light-blocking layer disposed on the side of the plurality of second reflective electrodes away from the substrate substrate.
[0112] In the driving substrate of this embodiment, since the first reflective electrode is provided and the insulating layer has a first surface suitable for forming the light-emitting element, the first reflective electrode can be integrated into the driving substrate manufactured by a wafer fab, which not only reduces the manufacturing cost and difficulty of the first reflective electrode, but also ensures high light output brightness and high light output efficiency of the display device.
[0113] For example, Fig.12 As shown, the driving substrate includes a base substrate 100, a first reflective electrode 106, and an insulating layer 103. The insulating layer 103 includes a via hole 110 filled with a metal member 118. The metal member 118 and the first reflective electrode 106 are electrically connected to each other. In this way, the insulating layer 103 has a first surface 1031 suitable for forming a light emitting element 130.
[0114] For example, Fig.15 As shown, the driving substrate includes a base substrate 200, a first reflective electrode 206, and an insulating layer 203, wherein the insulating layer 203 includes a first opening 210 exposing the first reflective electrode 203. Thus, the insulating layer 203 has a first surface 2031 suitable for forming a light emitting element 230.
[0115] In the display device and its manufacturing method and driving substrate provided by the embodiments of the present disclosure, since the insulating layer and the first reflective electrode are provided, it is possible to independently manufacture the stacked structure including the first reflective electrode and the insulating layer in the display device in a wafer fab, thereby reducing the difficulty of manufacturing the first reflective electrode and ensuring high light extraction efficiency and high light extraction brightness of the display device.
[0116] In this article, there are several points to note:
[0117] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.
[0118] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is enlarged or reduced, that is, these drawings are not drawn according to the actual scale.
[0119] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.
[0120] The above description is merely an exemplary embodiment of the present invention and is not intended to limit the protection scope of the present invention. The protection scope of the present invention is determined by the appended claims.
Claims
1. A display device, comprising: substrate substrate; A display area, wherein the display area includes a plurality of sub-pixels located on the substrate, each sub-pixel including: a first reflective electrode; a light-emitting element located on the first reflective electrode, the light-emitting element comprising a first electrode layer, an organic light-emitting functional layer and a second electrode layer sequentially stacked on the first reflective electrode, the first electrode layer being a transparent electrode layer, the organic light-emitting functional layer comprising an electron injection layer, an electron transport layer, a light-emitting layer, a hole injection layer and a hole transport layer; and an insulating layer, located between the first reflective electrode and the first electrode layer, the insulating layer being light-transmissive so that light emitted by the organic light-emitting functional layer can pass through it and reach the first reflective electrode to be reflected by the first reflective electrode; a pixel circuit, located on the base substrate and comprising a driving transistor, the driving transistor comprising a semiconductor layer, a source electrode, and a drain electrode, one of the source electrode and the drain electrode and the first reflective electrode being electrically connected to each other, the semiconductor layer being located in the base substrate; and A storage capacitor located on the substrate, configured to store a data signal; A peripheral area surrounding the display area and comprising: A second reflective electrode pattern, the second reflective electrode pattern is arranged to surround the display area and includes a plurality of second reflective electrodes located on the base substrate, the second reflective electrodes being used to reflect light; and a light-blocking layer disposed on a side of the plurality of second reflective electrodes away from the base substrate, the light-blocking layer being used to block light reflected by the second reflective electrodes, Wherein, the orthographic projections of the plurality of second reflective electrodes on the base substrate fall outside the display area. 2 . The display device according to claim 1 , wherein the insulating layer comprises a via hole filled with a metal member, and the first reflective electrode is electrically connected to the first electrode layer through the metal member. 3 . The display device according to claim 1 , wherein the insulating layer comprises a first opening exposing the first reflective electrode, and at least a portion of the first electrode layer is located in the first opening and is electrically connected to the first reflective electrode. 4 . The display device according to claim 1 , wherein the entire first reflective electrode is separated from the first electrode layer by the insulating layer and is insulated from the first electrode layer. 5 . The display device according to claim 1 , further comprising at least one wiring layer, wherein the at least one wiring layer is located between the first reflective electrode and the base substrate. 6 . 6 . The display device according to claim 1 , further comprising a bonding area and a pad located in the bonding area, wherein the insulating layer comprises a second opening exposing the pad. 7 . The display device according to claim 1 , wherein the first reflective electrode and the second reflective electrode both comprise a metal layer disposed on the same layer. The display device according to claim 7 , wherein the metal layer is made of aluminum or an aluminum alloy. 9 . The display device according to claim 8 , wherein the first reflective electrode and the second reflective electrode each further comprise at least one protective layer, which is stacked with the metal layer and disposed on a side of the metal layer close to the base substrate. 10 . The display device according to claim 1 , wherein an orthographic projection of the first electrode layer on the plane where the base substrate is located is located in an orthographic projection of the first reflective electrode on the plane where the base substrate is located. 11 . The display device according to claim 1 , wherein a pattern density of the plurality of first reflective electrodes is the same as a pattern density of the plurality of second reflective electrodes. 12 . The display device according to claim 1 , wherein the light blocking layer comprises at least two color filter layers of different colors stacked together. 13 . The display device according to claim 1 , wherein the base substrate is a silicon-based substrate.
14. A method for manufacturing a display device, the display device comprising a display area and a peripheral area surrounding the display area, the manufacturing method comprising: providing a substrate base plate; A plurality of sub-pixels are formed on the base substrate, wherein the plurality of sub-pixels are located in the display area, and the formation of the sub-pixels includes: forming a first reflective electrode; forming a light-emitting element on the first reflective electrode, the light-emitting element comprising a first electrode layer, an organic light-emitting functional layer and a second electrode layer sequentially stacked on the first reflective electrode, the first electrode layer being a transparent electrode layer, and the organic light-emitting functional layer comprising an electron injection layer, an electron transport layer, a light-emitting layer, a hole injection layer and a hole transport layer; forming an insulating layer between the first reflective electrode and the first electrode layer, the insulating layer being light-transmissive so that light emitted by the organic light-emitting functional layer can pass therethrough and reach the first reflective electrode to be reflected by the first reflective electrode; forming a pixel circuit on the base substrate, the pixel circuit comprising a driving transistor, the driving transistor comprising a semiconductor layer, a source electrode, and a drain electrode, one of the source electrode and the drain electrode being electrically connected to the first reflective electrode, and the semiconductor layer being located in the base substrate; and forming a storage capacitor on the substrate, wherein the storage capacitor is configured to store a data signal; forming a second reflective electrode pattern surrounding the display area in the peripheral area, the second reflective electrode pattern comprising a plurality of second reflective electrodes, the orthographic projections of the plurality of second reflective electrodes on the base substrate falling outside the display area, and the second reflective electrodes being used to reflect light; and A light blocking layer is formed on a side of the plurality of reflective electrodes away from the base substrate, and the light blocking layer is used to block the light reflected by the second reflective electrode.
15. The method for manufacturing a display device according to claim 14, further comprising: forming a via hole in the insulating layer; as well as A metal member is filled in the via hole.
16. The method for manufacturing a display device according to claim 15, wherein forming the first electrode layer comprises: forming a first electrode material on a side of the insulating layer away from the base substrate; as well as The first electrode material is patterned to form a first electrode layer, wherein the first electrode layer covers the via hole of the insulating layer and contacts the metal component, and the first electrode layer is electrically connected to the first reflective electrode through the metal component.
17. The method for manufacturing a display device according to claim 14, further comprising: A first opening is formed in the insulating layer, the first opening exposing the first reflective electrode.
18. The method for manufacturing a display device according to claim 17, wherein forming the first electrode layer comprises: Forming a first electrode material and the first opening on a side of the insulating layer away from the base substrate; as well as The first electrode material is patterned to form a first electrode layer, wherein the first electrode layer covers the first opening of the insulating layer, and at least a portion of the first electrode layer is formed in the first opening and is electrically connected to the first reflective electrode.
19. A driving substrate suitable for driving a light-emitting element to emit light, comprising: Substrate substrate, A display area, wherein the display area includes a plurality of sub-pixels located on the substrate, each sub-pixel including: A first reflective electrode is located on the substrate; an insulating layer, located on a side of the first reflective electrode away from the base substrate, the insulating layer having a first surface suitable for forming the light-emitting element, the insulating layer being light-transmissive so that light incident on the insulating layer penetrates therethrough and reaches the first reflective electrode to be reflected by the first reflective electrode; a pixel circuit, located on the base substrate and comprising a driving transistor, the driving transistor comprising a semiconductor layer, a source electrode, and a drain electrode, one of the source electrode and the drain electrode and the first reflective electrode being electrically connected to each other, the semiconductor layer being located in the base substrate; and A storage capacitor, located on the substrate and configured to store a data signal; A peripheral area surrounding the display area and comprising: A second reflective electrode pattern, the second reflective electrode pattern is arranged to surround the display area and includes a plurality of second reflective electrodes located on the base substrate, the second reflective electrodes being used to reflect light; and a light-blocking layer disposed on a side of the plurality of second reflective electrodes away from the base substrate, the light-blocking layer being used to block light reflected by the second reflective electrodes, Wherein, the orthographic projections of the plurality of second reflective electrodes on the base substrate fall outside the display area. 20 . The driving substrate of claim 19 , wherein the insulating layer comprises a via hole filled with a metal member, the metal member and the first reflective electrode being electrically connected to each other. 21 . The driving substrate of claim 19 , wherein the insulating layer comprises a first opening exposing the first reflective electrode.
Citation Information
Patent Citations
Transflective liquid crystal display device having a thin film transistor and manufacturing method thereof
CN102236204A
Organic light emitting diode display device and method of manufacturing the same
CN103681741A