Organic light-emitting display devices

Abstract

Embodiments of this disclosure relate to an organic light-emitting display device, comprising: a substrate; a plurality of organic light-emitting diodes (OLEDs) on the substrate; a spacer disposed between the plurality of OLEDs and protruding from an upper surface away from the substrate; a conductive layer overlapping the spacer; and a contact region exposing the conductive layer on one side of the spacer, wherein a common layer of the plurality of OLEDs and the conductive layer are connected to each other through the contact region.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2019-0135757, filed on October 29, 2019, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to an organic light-emitting display device, and more specifically to an organic light-emitting display device with improved reliability. Background Technology

[0004] An organic light-emitting display device is a self-emissive display device comprising an organic light-emitting layer formed between the hole injection electrode and the electron injection electrode, and having a hole injection electrode, an electron injection electrode, and an organic light-emitting layer therebetween. Therefore, an organic light-emitting display device emits light when excitons transition from an excited state to a ground state (generated when holes injected through the hole injection electrode and electrons injected through the electron injection electrode combine with each other at the organic light-emitting layer).

[0005] Because organic light-emitting diode (OLED) displays are self-emissive and do not require a separate light source, they can be driven with low voltage, configured to be lightweight and thin, and can exhibit excellent characteristics such as wide viewing angles, high contrast, and fast response times. Therefore, OLED displays have attracted attention as a next-generation display device (e.g., considered a next-generation display device). Summary of the Invention

[0006] One or more aspects of the embodiments relate to an organic light-emitting display device that has high reliability against external pressure.

[0007] Other aspects will be set forth in part in the description which follows and will be apparent in part from the description, or may be learned by practicing the disclosed embodiments of this disclosure.

[0008] According to one or more embodiments, an organic light-emitting display device includes: a substrate; a plurality of organic light-emitting diodes (OLEDs) on the substrate; a spacer disposed between the plurality of OLEDs and protruding from an upper surface away from the substrate; a conductive layer disposed to overlap the spacer; and a contact region exposing the conductive layer on one side of the spacer, wherein a common layer of the plurality of OLEDs and the conductive layer are connected to each other through the contact region.

[0009] In one embodiment, the contact area may surround the spacer.

[0010] In one embodiment, the conductive layer may be on the same layer as the pixel electrodes of the plurality of organic light-emitting diodes and may be spaced apart from the pixel electrodes.

[0011] In one embodiment, the conductive layer may be a line for transmitting a common power supply voltage.

[0012] In one embodiment, when viewed from a plan view, the area of ​​the conductive layer corresponding to the spacer may be larger than the area of ​​the spacer.

[0013] In one embodiment, the conductive layer may be on a different layer than the pixel electrode of the organic light-emitting diode.

[0014] In one embodiment, the conductive layer may overlap with at least a portion of the pixel electrode of the organic light-emitting diode.

[0015] In one embodiment, the organic light-emitting display device may further include a first line under the conductive layer, wherein the conductive layer may be connected to the first line via a via.

[0016] In one embodiment, the first line may be configured to transmit a common power supply voltage.

[0017] In one embodiment, the conductive layer may include a first connecting electrode and a second connecting electrode, wherein the first connecting electrode may be connected to the first line through a first through-hole, and the second connecting electrode may be connected to the first line through a second through-hole.

[0018] In one embodiment, the organic light-emitting display device may further include: a thin-film transistor on the substrate; and a first planarization layer and a second planarization layer disposed and stacked between the thin-film transistor and the plurality of organic light-emitting diodes, wherein the conductive layer may be located between the first planarization layer and the second planarization layer.

[0019] In one embodiment, the contact area may include a plurality of contact holes surrounding the spacer.

[0020] In one embodiment, the organic light-emitting display device may further include a pixel defining layer that covers the edges of the pixel electrodes of the plurality of organic light-emitting diodes and has an opening that exposes the center of the pixel electrodes, wherein the spacer may protrude from the upper surface of the pixel defining layer.

[0021] According to one or more embodiments, an organic light-emitting display device includes: a substrate; a plurality of organic light-emitting diodes (OLEDs) on the substrate; a pixel defining layer covering the edge of a pixel electrode of each OLED and exposing a central portion of the pixel electrode; a spacer disposed on the pixel defining layer between the plurality of OLEDs and protruding from an upper surface of the pixel defining layer; a first line overlapping the spacer; and a contact region exposing the first line on one side of the spacer, wherein a common layer of the plurality of OLEDs and the first line are connected to each other through the contact region.

[0022] In one embodiment, the contact area may surround the spacer.

[0023] In one embodiment, the first line may be on the same layer as the pixel electrodes of the plurality of organic light-emitting diodes and may be spaced apart from the pixel electrodes.

[0024] In one embodiment, the first line may be configured to transmit a common power supply voltage.

[0025] In one embodiment, the organic light-emitting display device may further include: a thin-film transistor on the substrate; and a first planarization layer and a second planarization layer disposed and stacked between the thin-film transistor and the plurality of organic light-emitting diodes, wherein the first line may be located between the first planarization layer and the second planarization layer.

[0026] In one embodiment, the organic light-emitting display device may further include a sealed substrate arranged to face the substrate.

[0027] In one embodiment, the organic light-emitting display device may further include a thin-film encapsulation layer arranged to cover the plurality of organic light-emitting diodes, wherein the thin-film encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked sequentially. Attached Figure Description

[0028] The above and other aspects, features, and advantages of embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0029] Figure 1 This is a plan view of an organic light-emitting display device according to an embodiment;

[0030] Figures 2A to 2C Each is an equivalent circuit diagram of a sub-pixel of an organic light-emitting display device according to an embodiment;

[0031] Figure 3 This is a plan view of a portion of the display area according to one embodiment;

[0032] Figure 4 It is along Figure 3 A cross-sectional view of the display area intercepted by line I-I';

[0033] Figure 5 yes Figure 4 Enlarged cross-sectional view of the spacer;

[0034] Figure 6A and Figure 6B Each is a plan view of a spacer region according to an embodiment;

[0035] Figure 7A This is a cross-sectional view of an organic light-emitting display device according to another embodiment;

[0036] Figure 7B It is a plan view of a portion of the display area according to another embodiment;

[0037] Figure 8 This is a cross-sectional view of an organic light-emitting display device according to another embodiment;

[0038] Figure 9 This is a cross-sectional view of an organic light-emitting display device according to another embodiment;

[0039] Figure 10 This is a cross-sectional view of an organic light-emitting display device according to another embodiment;

[0040] Figure 11 This is a cross-sectional view of an organic light-emitting display device according to another embodiment; and

[0041] Figure 12 This is a cross-sectional view of an organic light-emitting display device according to another embodiment. Detailed Implementation

[0042] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein similar reference numerals always denote similar elements. In this respect, the disclosed embodiments may take different forms and should not be construed as limited to the corresponding descriptions set forth herein. Therefore, the disclosed embodiments are described below only with reference to the accompanying drawings to explain various aspects of this disclosure. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” means only a; only b; only c; both a and b; both a and c; both b and c; all of a, b, and c; or variations thereof.

[0043] In the following, embodiments will be described in detail with reference to the accompanying drawings. The same reference numerals are used to denote the same elements, and their repeated descriptions will not be provided. In this document, when describing embodiments of the invention, the term "may" refers to "one or more embodiments of the invention".

[0044] It will be understood that although the terms “first,” “second,” etc., may be used in this document to describe various components, these components should not be limited by these terms.

[0045] Unless the context clearly indicates otherwise, the singular usage covers the plural usage.

[0046] It will be further understood that the terms “comprises” and “includes” as used herein specify the presence of the stated features and / or elements, but do not exclude the presence or addition of one or more other features and / or elements.

[0047] It will be understood that when a layer, region, or element is referred to as being "on" another layer, region, or element, the layer, region, or element may be directly or indirectly on that other layer, region, or element. For example, there may be (multiple) intermediate layers, (multiple) intermediate regions, or (multiple) intermediate elements.

[0048] For ease of explanation, the dimensions of the elements in the accompanying drawings may be enlarged. For example, for ease of explanation, the dimensions and thicknesses of the components in the accompanying drawings may be shown arbitrarily, and the following embodiments are not limited thereto.

[0049] When an embodiment can be implemented differently, the disclosed process sequence can be performed in a different order than that described. For example, two consecutive (e.g., sequential) described processes can be performed substantially simultaneously or in the reverse order of the described process.

[0050] It will be understood that when a first layer, first region, or first component is connected (e.g., physically or electrically) to another part, the first layer, first region, or first component can be directly connected to that part, or an intermediate layer, intermediate region, or intermediate component can exist such that the first layer, first region, or first component can be indirectly connected to that part. For example, when a first layer, first region, or first component is electrically connected to another part, the first layer, first region, or first component can be directly electrically connected to that part, or can be indirectly electrically connected to that part through another layer, another region, or another component.

[0051] Figure 1 This is a plan view of an organic light-emitting display device 110 according to an embodiment.

[0052] refer to Figure 1 The organic light-emitting display device 110 may include a display area DA and a peripheral area PA that is a non-display area. In the display area DA, sub-pixels PX, which include display devices, are arranged to provide an image.

[0053] Each sub-pixel PX can emit, for example, red, green, blue, or white light, and may include, for example, an organic light-emitting diode. Additionally, each sub-pixel PX may also include devices such as thin-film transistors (TFTs) and / or capacitors.

[0054] As used herein, a subpixel PX refers to a unit that emits light of any one of the colors described above: red, green, blue, or white. Subpixels PX can be aggregated to provide (e.g., form or constitute) pixels that achieve (e.g., provide) a variety of suitable colors. For example, a pixel may include a first subpixel that emits red light, a second subpixel that emits green light, and a third subpixel that emits blue light, and the color of the pixel can be achieved by rendering the first, second, and third subpixels (e.g., by the brightness of the light emitted from the first, second, and third subpixels).

[0055] The peripheral region PA is the area that does not provide an image and includes scan drivers and data drivers to provide (e.g., generate) electrical signals to be applied to the sub-pixels PX of the display region DA. The peripheral region PA may also include power lines to provide power such as drive voltages and common voltages to the sub-pixels PX.

[0056] Figures 2A to 2C This is an equivalent circuit diagram of a sub-pixel PX in an organic light-emitting display device according to an embodiment.

[0057] refer to Figure 2A The sub-pixel PX includes a pixel circuit PC connected to the scan line SL and the data line DL, and an organic light-emitting diode (OLED) connected to the pixel circuit PC.

[0058] As used herein, when a first component is described as "connected" to a second component, the first component may be electrically connected to the second component, but the term "connected" should not be limited thereto. The pixel circuit PC includes a driving thin-film transistor TFT1, a switching thin-film transistor TFT2, and a storage capacitor Cst. The switching thin-film transistor TFT2 is connected to a scan line SL and a data line DL, and supplies a data signal (e.g., data voltage) Dm input through the data line DL to the driving thin-film transistor TFT1 according to a scan signal Sn input through the scan line SL. For example, in one embodiment, the gate electrode of the switching thin-film transistor TFT2 is connected to the scan line SL, the source electrode of the switching thin-film transistor TFT2 is connected to the data line DL, and the drain electrode of the switching thin-film transistor TFT2 is connected to the gate electrode of the driving thin-film transistor TFT1 and a first electrode of the storage capacitor Cst.

[0059] The storage capacitor Cst is connected to the switching thin-film transistor TFT2 and the drive voltage line PL, and stores the voltage corresponding to the difference between the voltage supplied from the switching thin-film transistor TFT2 and the drive power supply voltage ELVDD supplied to the drive voltage line PL.

[0060] A driving thin-film transistor (TFT1) is connected to a driving voltage line PL and a storage capacitor Cst, and a driving current corresponding to the voltage value stored in the storage capacitor Cst can be controlled to flow from the driving voltage line PL through the organic light-emitting diode (OLED). For example, in one embodiment, the gate electrode of the driving TFT1 is connected to the drain electrode of a switching TFT2, the source electrode of the driving TFT1 is connected to a second electrode of the driving voltage line PL and the storage capacitor Cst, and the drain electrode of the driving TFT1 is connected to one electrode (e.g., the anode electrode) of the OLED. The opposite electrode (e.g., the cathode electrode) of the OLED is supplied with a common power supply voltage ELVSS. The OLED can emit light with a specific brightness depending on the driving current.

[0061] Although Figure 2A The pixel circuit PC is described as including two thin-film transistors and a storage capacitor, but this disclosure is not limited thereto.

[0062] refer to Figure 2B The pixel circuit PC may include a driving thin-film transistor TFT1, a switching thin-film transistor TFT2, a compensation thin-film transistor TFT3, a first initialization thin-film transistor TFT4, an operation control thin-film transistor TFT5, an emission control thin-film transistor TFT6, and a second initialization thin-film transistor TFT7.

[0063] although Figure 2BThe illustration shows a scenario where signal lines SLn, SLn-1, EL, and DL, an initialization voltage line VL, and a drive voltage line PL are provided for a sub-pixel PX; however, this disclosure is not limited thereto. In another embodiment, at least one of the signal lines SLn, SLn-1, EL, and DL and the initialization voltage line VL may be shared by adjacent sub-pixels PX.

[0064] The drain electrode of the driving thin-film transistor TFT1 can be electrically connected to the organic light-emitting diode OLED via the emitter control thin-film transistor TFT6. The driving thin-film transistor TFT1 can receive a data signal (e.g., data voltage) Dm according to the switching operation of the switching thin-film transistor TFT2, and supply driving current to the organic light-emitting diode OLED.

[0065] The gate electrode of the switching thin-film transistor TFT2 is connected to the scan line SLn, and the source electrode of the switching thin-film transistor TFT2 is connected to the data line DL. The drain electrode of the switching thin-film transistor TFT2 can be connected to the source electrode of the driving thin-film transistor TFT1, and can be further connected to the driving voltage line PL via the operation control thin-film transistor TFT5.

[0066] The switching thin-film transistor TFT2 is turned on in response to the scan signal Sn received through the scan line SLn, and can perform a switching operation to transmit the data signal (e.g., data voltage) Dm transmitted to the data line DL to the source electrode of the driving thin-film transistor TFT1.

[0067] The gate electrode of the compensation thin-film transistor TFT3 can be connected to the scan line SLn. The source electrode of the compensation thin-film transistor TFT3 can be connected to the drain electrode of the driving thin-film transistor TFT1, and can be further connected to the pixel electrode of the organic light-emitting diode OLED via the emission control thin-film transistor TFT6. The drain electrode of the compensation thin-film transistor TFT3 can be connected to any electrode of the storage capacitor Cst (e.g., the first electrode), the source electrode of the first initialization thin-film transistor TFT4, and the gate electrode of the driving thin-film transistor TFT1. The compensation thin-film transistor TFT3 is turned on in response to the scan signal Sn received via the scan line SLn, thereby connecting the gate electrode and drain electrode of the driving thin-film transistor TFT1 to each other, thus diode-connecting the driving thin-film transistor TFT1.

[0068] The gate electrode of the first initialization thin-film transistor TFT4 can be connected to the previous scan line SLn-1. The drain electrode of the first initialization thin-film transistor TFT4 can be connected to the initialization voltage line VL. The source electrode of the first initialization thin-film transistor TFT4 can be connected to any electrode of the storage capacitor Cst (e.g., the first electrode), the drain electrode of the compensation thin-film transistor TFT3, and the gate electrode of the driving thin-film transistor TFT1. The first initialization thin-film transistor TFT4 can be turned on in response to the previous scan signal Sn-1 received through the previous scan line SLn-1 to transmit the initialization voltage VINT to the gate electrode of the driving thin-film transistor TFT1 to perform an initialization operation for initializing the voltage of the gate electrode of the driving thin-film transistor TFT1.

[0069] The gate electrode of the operation control thin-film transistor TFT5 can be connected to the emitter control line EL. The source electrode of the operation control thin-film transistor TFT5 can be connected to the drive voltage line PL. The drain electrode of the operation control thin-film transistor TFT5 is connected to the source electrode of the driving thin-film transistor TFT1 and also to the drain electrode of the switching thin-film transistor TFT2.

[0070] The gate electrode of the emission control thin-film transistor TFT6 can be connected to the emission control line EL. The source electrode of the emission control thin-film transistor TFT6 can be connected to the drain electrode of the driving thin-film transistor TFT1, and can also be connected to the source electrode of the compensation thin-film transistor TFT3. The drain electrode of the emission control thin-film transistor TFT6 can be electrically connected to the pixel electrode of the organic light-emitting diode OLED. The operation control thin-film transistor TFT5 and the emission control thin-film transistor TFT6 can be concurrently (e.g., simultaneously) turned on in response to the emission control signal En received through the emission control line EL, so that the driving power supply voltage ELVDD is transmitted to the organic light-emitting diode OLED, and the driving current can flow through the organic light-emitting diode OLED.

[0071] The gate electrode of the second initialization thin-film transistor TFT7 can be connected to the previous scan line SLn-1. The source electrode of the second initialization thin-film transistor TFT7 can be connected to the pixel electrode of the organic light-emitting diode OLED. The drain electrode of the second initialization thin-film transistor TFT7 can be connected to the initialization voltage line VL. The second initialization thin-film transistor TFT7 can be turned on in response to the previous scan signal Sn-1 received through the previous scan line SLn-1 to initialize the pixel electrode of the organic light-emitting diode OLED.

[0072] although Figure 2BThe illustration shows a first initialization thin-film transistor TFT4 and a second initialization thin-film transistor TFT7 connected to the previous scan line SLn-1, but this disclosure is not limited thereto. In another embodiment, the first initialization thin-film transistor TFT4 may be connected to the previous scan line SLn-1 and driven according to the previous scan signal Sn-1, and the second initialization thin-film transistor TFT7 may be connected to a separate signal line (e.g., the next scan line) and driven according to a signal transmitted from the corresponding scan line (e.g., from a separate signal line).

[0073] The other electrode (e.g., the second electrode) of the storage capacitor Cst can be connected to the drive voltage line PL. Any electrode (e.g., the first electrode) of the storage capacitor Cst can be connected to the gate electrode of the driving thin-film transistor TFT1, the drain electrode of the compensation thin-film transistor TFT3, and the source electrode of the first initialization thin-film transistor TFT4.

[0074] The opposite electrode (e.g., the cathode electrode) of the organic light-emitting diode (OLED) is supplied with a common power supply voltage ELVSS. The OLED can receive driving current from the driving thin-film transistor TFT1 (e.g., from the driving thin-film transistor TFT1 via the emission control thin-film transistor TFT6) to emit light.

[0075] Pixel circuit PC is not limited to reference Figure 2A and Figure 2B The circuit design and quantity of the TFTs and storage capacitors are described, and the circuit design and quantity of the TFTs and storage capacitors can vary depending on any suitable design and quantity of the TFTs and storage capacitors. The pixel circuit PC may also include bias electrodes disposed below the thin-film transistors and connected to the thin-film transistors.

[0076] refer to Figure 2C Each sub-pixel PX may include an organic light-emitting diode (OLED) and a pixel circuit PC comprising multiple thin-film transistors to drive the OLED. The pixel circuit PC may include a driving thin-film transistor TFT1, a switching thin-film transistor TFT2, a sensing thin-film transistor TFT3', and a storage capacitor Cst.

[0077] The scan line SL can be connected to the gate electrode G2 of the switching thin-film transistor TFT2, and the data line DL can be connected to the source electrode S2 of the switching thin-film transistor TFT2. The first electrode CE1 of the storage capacitor Cst can be connected to the drain electrode D2 of the switching thin-film transistor TFT2.

[0078] Therefore, in response to the scan signal Sn from the scan line SL of each sub-pixel PX, the switching thin-film transistor TFT2 supplies the data voltage Dm of the data line DL to the first node N.

[0079] The gate electrode G1 of the driving thin film transistor TFT1 can be connected to the first node N, the source electrode S1 of the driving thin film transistor TFT1 can be connected to the first power line PL1 configured to transmit the driving power supply voltage ELVDD, and the drain electrode D1 of the driving thin film transistor TFT1 can be connected to the anode electrode of the organic light-emitting diode OLED.

[0080] Therefore, the amount of current flowing through the organic light-emitting diode (OLED) can be adjusted according to the source-gate voltage Vgs of the driving thin-film transistor TFT1. The source-gate voltage Vgs of the driving thin-film transistor TFT1 can be the voltage applied between the driving power supply voltage ELVDD and the first node N.

[0081] The sensing control line SSL is connected to the gate electrode G3 of the sensing thin-film transistor TFT3', the source electrode S3 of the sensing thin-film transistor TFT3' is connected to the second node S, and the drain electrode D3 of the sensing thin-film transistor TFT3' is connected to the reference voltage line RL. In some embodiments, the sensing thin-film transistor TFT3' may be controlled by the scan line SL instead of the sensing control line SSL.

[0082] The sensing thin-film transistor TFT3' can sense the potential of the anode electrode of the organic light-emitting diode (OLED). In response to the sensing signal SSn received from the sensing control line SSL, the sensing thin-film transistor TFT3' supplies a pre-charge voltage from the reference voltage line RL to the second node S, or supplies the voltage of the anode electrode of the OLED to the reference voltage line RL during sensing (e.g., when the sub-pixel PX is used to sense light, sound, user touch, etc.).

[0083] In the storage capacitor Cst, the first electrode CE1 is connected to the first node N, and the second electrode CE2 is connected to the second node S. The storage capacitor Cst is charged using the voltage difference between the voltage supplied to the first node N and the voltage supplied to the second node S, and the voltage difference is used as the driving voltage for the thin-film transistor TFT1. For example, the storage capacitor Cst can be charged using the voltage difference between the data voltage Dm supplied to the first node N and the pre-charge voltage Vpre supplied to the second node S.

[0084] The bias electrode BSM can be formed corresponding to the driving thin-film transistor TFT1 and can be connected to the source electrode S3 of the sensing thin-film transistor TFT3'. Because the bias electrode BSM receives a voltage related to the potential of the source electrode S3 of the sensing thin-film transistor TFT3', the driving thin-film transistor TFT1 can be stabilized. In some embodiments, the bias electrode BSM is not connected to the source electrode S3 of the sensing thin-film transistor TFT3' and can be connected to a separate bias line.

[0085] The opposite electrode (e.g., the cathode electrode) of the organic light-emitting diode (OLED) is supplied with a common power supply voltage ELVSS. The OLED receives driving current from the driving thin-film transistor (TFT1) to emit light.

[0086] although Figure 2C The illustration shows a configuration where each sub-pixel PX is provided with signal lines SL, SSL, and DL, a reference voltage line RL, a first power line PL1, and a second power line PL2; however, this disclosure is not limited thereto. For example, at least one of the signal lines SL, SSL, and DL, the reference voltage line RL, the first power line PL1, and the second power line PL2 may be shared by adjacent sub-pixels PX.

[0087] Figure 3 It is a plan view of a portion of the display area DA according to an embodiment; and Figure 4 It is along Figure 3 The cross-sectional view of the display area DA intercepted by line I-I'. Figure 5 yes Figure 4 Enlarged cross-sectional view of the spacer SPC.

[0088] refer to Figure 3 The organic light-emitting display device according to this embodiment includes a plurality of sub-pixels PX and a spacer SPC between the plurality of sub-pixels PX. A second power line PL2 providing a common power supply voltage ELVSS is located below the spacer SPC, and a contact area CA is provided around the spacer SPC to expose a portion of the second power line PL2. A common layer and a counter electrode, which will be described in more detail below, can be connected to the second power line PL2 through the contact area CA. The second power line PL2 may include a first region R1 corresponding to the lower portion of the spacer SPC (e.g., the portion of the second power line PL2 located below the spacer SPC), and the area of ​​the first region R1 may be larger than the area of ​​the spacer SPC (e.g., when viewed from a plan view). Figure 3In one embodiment, the second power line PL2 extends in a first direction (X direction), but in another embodiment, the second power line PL2 may extend in a second direction (Y direction). In some embodiments, a contact region CA may be formed to surround the spacer SPC. In some embodiments, the pixel defining layer may have holes, multiple holes, trenches, etc., that expose the second power line PL2 or the conductive layer and define the contact region CA.

[0089] Pixel P can include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can emit different colors of light. For example, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can emit red light, green light, and blue light, respectively.

[0090] like Figure 3 As shown, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can be arranged in an S-strip structure (e.g., a pattern). For example, the third sub-pixel PX3 extends in the second direction (Y direction), and the first sub-pixel PX1 and the second sub-pixel PX2 can be arranged adjacent to a third sub-pixel PX3. The third sub-pixels PX3 can be arranged in a line in the second direction (Y direction). The first sub-pixels PX1 and the second sub-pixels PX2 can be arranged alternately in the second direction (Y direction). In this case, the spacer SPC can be located between the third sub-pixels PX3 arranged in the second direction (Y direction).

[0091] exist Figure 3 In the illustration, the arrangement of sub-pixels PX is shown as having an S-strip structure (e.g., a pattern), but this disclosure is not limited thereto. For example, the arrangement of sub-pixels PX may have various suitable arrangement structures (e.g., arrangement patterns), such as strip structures, pentile structures, and mosaic structures.

[0092] In the following text, reference will be made to Figure 4 A stacking structure according to one embodiment is described.

[0093] A buffer layer 111 may be on the substrate 100. The buffer layer 111 may reduce or prevent the penetration of foreign matter, moisture, and / or outside air from the lower part of the substrate 100 and may provide a flat surface on the substrate 100. The buffer layer 111 may include (e.g., is) inorganic materials, organic materials, and / or organic-inorganic composite materials such as oxides or nitrides. The buffer layer 111 may have a single-layer structure or a multi-layer structure comprising inorganic and / or organic materials. A barrier layer may be present between the substrate 100 and the buffer layer 111 to block or reduce the penetration of outside air.

[0094] The first thin-film transistor (TFT1) may include a first semiconductor layer A1, a first gate electrode G1, a first source electrode S1, and a first drain electrode D1. The second thin-film transistor (TFT2) may include a second semiconductor layer A2, a second gate electrode G2, a second source electrode S2, and a second drain electrode D2. The first TFT1 can be used as a driving TFT connected to an organic light-emitting diode (OLED) to drive the OLED. The second TFT2 can be connected to a data line DL to function as a switching TFT. Although two TFTs are shown in the figures, this disclosure is not limited thereto. The number of TFTs may vary and suitably be changed from two to seven. For example, in some embodiments, the number of TFTs may be in the range of two to seven.

[0095] The first semiconductor layer A1 and the second semiconductor layer A2 may each comprise (e.g., amorphous silicon and / or polycrystalline silicon). In another embodiment, the first semiconductor layer A1 and the second semiconductor layer A2 may each comprise (e.g., an oxide of at least one material selected from indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). Each of the first semiconductor layer A1 and the second semiconductor layer A2 may include a channel region and impurity-doped source and drain regions.

[0096] The first gate electrode G1 and the second gate electrode G2 may be located on the first semiconductor layer A1 and the second semiconductor layer A2, respectively. The first gate insulating layer 112 is located between the first gate electrode G1 and the first semiconductor layer A1, and between the second gate electrode G2 and the second semiconductor layer A2. Each of the first gate electrode G1 and the second gate electrode G2 may include (e.g., is) molybdenum (Mo), aluminum (Al), copper (Cu), and / or Ti, and may be formed as a single layer or multiple layers. For example, each of the first gate electrode G1 and the second gate electrode G2 may be a single layer of Mo.

[0097] The first gate insulating layer 112 may include (for example) silicon oxide (SiO2) or silicon nitride (SiN). X ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) and / or zinc oxide (ZnO).

[0098] A second gate insulating layer 113 may be provided to cover the first gate electrode G1 and the second gate electrode G2. The second gate insulating layer 113 may include (for example) SiO2, SiN X SiON, Al2O3, TiO2, Ta2O5, HfO2 and / or ZnO.

[0099] The first electrode CE1 of the storage capacitor Cst can overlap with the first thin-film transistor TFT1. For example, the first gate electrode G1 of the first thin-film transistor TFT1 can be used as the first electrode CE1 of the storage capacitor Cst.

[0100] The second electrode CE2 of the storage capacitor Cst overlaps with the first electrode CE1, and the second gate insulating layer 113 is located between the second electrode CE2 and the first electrode CE1 of the storage capacitor Cst. In some embodiments, the second gate insulating layer 113 may serve as the dielectric layer of the storage capacitor Cst. The second electrode CE2 may include (e.g., is) a conductive material including Mo, Al, Cu and / or Ti, and may be formed as a single layer or multiple layers including (e.g., is) the aforementioned materials (e.g., Mo, Al, Cu and / or Ti, etc.). For example, the second electrode CE2 may be a single layer of Mo or a multilayer of Mo / Al / Mo.

[0101] The first source electrode S1 and the first drain electrode D1, as well as the second source electrode S2 and the second drain electrode D2, can be on the interlayer insulating layer 114. The interlayer insulating layer 114 can be on the second gate insulating layer 113 and on the second electrode CE2 of the storage capacitor Cst.

[0102] Interlayer insulating layer 114 may include (for example) SiO2, SiN X SiON, Al2O3, TiO2, Ta2O5, HfO2 and / or ZnO.

[0103] The first source electrode S1, the first drain electrode D1, the second source electrode S2, and the second drain electrode D2 may comprise (for example, be) conductive materials including Mo, Al, Cu, and / or Ti, and may be formed as a single layer or multiple layers comprising the materials described above (e.g., Mo, Al, Cu, and / or Ti). For example, the first source electrode S1, the first drain electrode D1, the second source electrode S2, and the second drain electrode D2 may have a Ti / Al / Ti multilayer structure.

[0104] The first planarization layer 116 may be on the first source electrode S1, the first drain electrode D1, the second source electrode S2, and the second drain electrode D2. An organic light-emitting diode (OLED) may be on the first planarization layer 116. In some embodiments, a second planarization layer 117 may be on the first planarization layer 116, and the OLED may be on the second planarization layer 117.

[0105] The first planarization layer 116 may have a flat top surface, allowing the pixel electrode 210 to be formed flat. The first planarization layer 116 may include (e.g., is) an organic material and may be formed as a single layer or multiple layers. The first planarization layer 116 may include (e.g., is) common polymers such as benzocyclobutene (BCB), polyimide, polymethyl methacrylate (PMMA) and / or polystyrene (PS), polymer derivatives including phenolic groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluoropolymers, p-xylyl polymers, vinyl alcohol polymers, and / or mixtures thereof.

[0106] The organic light-emitting diode (OLED) is mounted on a first planarization layer 116. The OLED includes a pixel electrode 210, an intermediate layer 220 containing an organic light-emitting layer 222, and a counter electrode 230. For example... Figure 4 As shown, the organic light-emitting display device may further include a second planarization layer 117 on the first planarization layer 116.

[0107] The first planarization layer 116 has a via that exposes either the first source electrode S1 or the first drain electrode D1 of the first thin film transistor TFT1, and the pixel electrode 210 can contact the first source electrode S1 or the first drain electrode D1 through the via to be electrically connected to the first thin film transistor TFT1.

[0108] The pixel electrode 210 can be a transmissive electrode or a reflective electrode. In some embodiments, the pixel electrode 210 may include a reflective film formed of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) and / or compounds thereof, and a transparent or translucent electrode layer formed on the reflective film. The transparent or translucent electrode layer may include (for example,) at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and zinc aluminum oxide (AZO).

[0109] The pixel defining layer 119 may be on the first planarization layer 116. The pixel defining layer 119 may define the light-emitting area of ​​the sub-pixel PX by having an opening 119OP corresponding to each sub-pixel PX. For example, the opening 119OP may expose at least the central portion of the pixel electrode 210. Furthermore, the pixel defining layer 119 may prevent or reduce the occurrence of arcing at the edge of the pixel electrode 210 by increasing the distance between the edge of the pixel electrode 210 and the opposing electrode 230 on the pixel electrode 210. The pixel defining layer 119 may include (e.g., is) at least one organic insulating material selected from polyimide, polyamide, acrylic resin, BCB, and phenolic resin, and may be formed by spin coating or the like.

[0110] The spacer SPC may be on the pixel defining layer 119. The spacer SPC may be between multiple display elements. For example, the spacer SPC may be between a first sub-pixel PX1 and a second sub-pixel PX2. The spacer SPC may protrude from the pixel defining layer 119 in a direction away from the substrate 100. For example, in one embodiment, the spacer SPC may be on the pixel defining layer 119 and may protrude away from the substrate 100 and the pixel defining layer 119.

[0111] Spacer SPCs can be components that prevent or reduce stamping during masking processes. When a spacer SPC is sealed with a sealing substrate, the spacer SPC can support the sealing substrate. In one embodiment, the spacer SPC can be configured to protect an organic light-emitting diode (OLED) or similar device when external pressure is applied to it. In another embodiment, the spacer SPC can alter the optical path. For example, in one embodiment, the spacer SPC can be configured to alter the optical path of light emitted from an OLED.

[0112] The spacer SPC may include (e.g., is) at least one organic insulating material selected from polyimide, polyamide, acrylic resin, BCB, and phenolic resin, and may be formed by spin coating or the like. In some embodiments, the spacer SPC may be formed concurrently (e.g., simultaneously) with the same material as the pixel defining layer 119 by a halftone mask process. For example, in one embodiment, the spacer SPC and the pixel defining layer 119 may be formed concurrently (e.g., simultaneously) using the same material and by a halftone mask process.

[0113] The intermediate layer 220 of an organic light-emitting diode (OLED) may include an organic light-emitting layer 222. The organic light-emitting layer 222 may include (e.g., is) an organic material comprising fluorescent and / or phosphorescent materials to emit red, green, blue, or white light. The intermediate layer 220 may include a first common layer 221 under the organic light-emitting layer 222 and / or a second common layer 223 on the organic light-emitting layer 222.

[0114] The first common layer 221 can be a single layer or multiple layers. For example, when the first common layer 221 comprises (e.g., is) a polymer material, the first common layer 221 can be a hole transport layer (HTL) with a single-layer structure and can include (e.g., is) 3,4-ethylene-dihydroxythiophene (PEDOT) and / or polyaniline (PANI). When the first common layer 221 comprises a low molecular weight material, the first common layer 221 can include a hole injection layer (HIL) and an HTL.

[0115] The second common layer 223 is optional. For example, when the first common layer 221 and the organic light-emitting layer 222 comprise (e.g., are) a polymer material, a second common layer 223 may be formed (e.g., may include). The second common layer 223 may be a single layer or multiple layers. The second common layer 223 may include an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0116] For each sub-pixel PX in the display area DA, an organic light-emitting layer 222 of the intermediate layer 220 can be arranged. For example, in some embodiments, the organic light-emitting layer 222 can be provided as multiple portions, and each portion of the organic light-emitting layer 222 can correspond to a sub-pixel PX. The organic light-emitting layer 222 can be arranged to overlap with the opening 119OP of the pixel defining layer 119 and / or the pixel electrode 210. The first common layer 221 and the second common layer 223 of the intermediate layer 220 can be formed as a single body. The first common layer 221 and the second common layer 223 can be arranged on the spacer SPC (e.g., covering the spacer SPC) and can be in a portion of the peripheral area.

[0117] The counter electrode 230 can be integrally formed with multiple organic light-emitting diodes (OLEDs) to correspond to multiple pixel electrodes 210. The counter electrode 230 may include (e.g., is) a conductive material having a low work function. For example, the counter electrode 230 may include (e.g., is) a transparent or translucent layer comprising Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, lithium (Li), calcium (Ca), and / or alloys thereof. In one embodiment, the counter electrode 230 may also include a layer such as ITO, IZO, ZnO, or In2O3 on the transparent or translucent layer comprising the aforementioned materials.

[0118] A coating layer that increases light extraction efficiency and / or a LiF layer that protects the relative electrode 230, etc., from subsequent processes, can also be arranged on the relative electrode 230.

[0119] In this embodiment, a second power line PL2 may be provided under the spacer SPC to overlap with the spacer SPC to provide a common power supply voltage ELVSS, and a contact area CA exposing the second power line PL2 may be provided around the spacer SPC. The contact area CA may be provided as a hole passing through the pixel defining layer 119.

[0120] In this embodiment, the second power line PL2 may be spaced apart from the pixel electrode 210 (e.g., spaced apart) and may be on the same layer as the pixel electrode 210. The second power line PL2 may be formed of the same material as the pixel electrode 210 and may be formed simultaneously with the pixel electrode 210. For example, the second power line PL2 may include (e.g., is) a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and / or compounds thereof, and a transparent or translucent electrode layer may be formed on the reflective film. The transparent or translucent electrode layer may include (e.g., is) at least one selected from ITO, IZO, ZnO, In2O3, IGO, and AZO.

[0121] The second power line PL2 can be formed to overlap with the spacer SPC, and the area of ​​the first region R1 corresponding to the spacer SPC can be larger than the area of ​​the spacer SPC. For example, the width W1 of the first region R1 of the second power line PL2 can be larger than the width W2 of the spacer SPC.

[0122] The first common layer 221, the second common layer 223, and / or the opposite electrode 230 can be inserted into the contact area CA to connect to the second power line PL2.

[0123] refer to Figure 5 Because the spacer SPC protrudes from the upper surface of the substrate 100 (e.g., protruding away from the upper surface of the substrate 100), the spacer SPC may be susceptible to external pressure. When external pressure OPr is applied to the upper part of the spacer SPC, the pressure may be applied to the first common layer 221 and / or the second common layer 223 to prevent or reduce current flow to the upper part of the spacer SPC (e.g., flow over the upper part of the spacer SPC, flow across the upper part of the spacer SPC, etc.).

[0124] When no contact region CA is formed around the spacer SPC, the resistance in the first common layer 221 and / or the second common layer 223 may increase due to external pressure OPr. As a result, the brightness of the adjacent organic light-emitting diode (OLED) may decrease.

[0125] In this embodiment, the contact area CA connecting the first common layer 221 and the second power line PL2 can be formed around the spacer SPC to form a current path CP under the spacer SPC. Therefore, even if external pressure OPr is applied to the spacer SPC, the brightness of the organic light-emitting diode OLED will not decrease.

[0126] like Figure 3 As shown, in some embodiments, the contact area CA can be provided as a hole to surround the spacer SPC.

[0127] In another embodiment, such as Figure 6A As shown, the contact area CA may include a plurality of contact holes CAH such that the plurality of contact holes CAH surround the spacer SPC. In another embodiment, as Figure 6B As shown, the contact area CA can be arranged only on one side of the spacer SPC without surrounding the spacer SPC.

[0128] Figure 7A This is a cross-sectional view of an organic light-emitting display device according to another embodiment. Figure 7A In, with Figure 4 The same reference numerals in the accompanying drawings indicate the same elements, and repeated descriptions will not be repeated.

[0129] refer to Figure 7A An organic light-emitting display device according to one embodiment includes a substrate 100, a plurality of organic light-emitting diodes (OLEDs), a spacer segment (SPC), a second power line PL2 that overlaps with the spacer segment (SPC), and a contact region CA, wherein a first common layer 221 of the organic light-emitting diodes (OLEDs) and the second power line PL2 are connected to each other in the contact region CA.

[0130] The organic light-emitting display device may further include a second planarization layer 117 on the first planarization layer 116. Therefore, the second power line PL2 may be located between the first planarization layer 116 and the second planarization layer 117. In some embodiments, the second planarization layer 117 is located between the first planarization layer 116 and the organic light-emitting diode (OLED).

[0131] The second power line PL2 may include (e.g., is) a conductive material including Mo, Al, Cu and / or Ti, and may be formed as a single layer or multiple layers including (e.g., is) the materials described above (e.g., Mo, Al, Cu and / or Ti, etc.). For example, the second power line PL2 may have a Ti / Al / Ti multilayer structure.

[0132] The second planarization layer 117 may have a flat top surface, allowing the pixel electrode 210 to be formed flat. The second planarization layer 117 may include (e.g., is) an organic material and may be formed as a single layer or multiple layers. The second planarization layer 117 may include (e.g., is) common polymers such as BCB, polyimide, PMMA and / or PS, phenolic polymer derivatives, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluoropolymers, p-xylyl polymers, vinyl alcohol polymers, and / or mixtures thereof (e.g., combinations).

[0133] The organic light-emitting diode (OLED) is located on the second planarization layer 117. The pixel electrode 210 of the OLED can be connected to the first thin-film transistor (TFT) 1 via the connection electrode on the first planarization layer 116.

[0134] In this embodiment, because the second power line PL2 is arranged on a different layer than the pixel electrode 210, a portion of the second power line PL2 can overlap with the pixel electrode 210.

[0135] The contact area CA may include (e.g.) a hole through the pixel defining layer 119 and the second planarization layer 117, and may be formed to expose the second power line PL2. The first common layer 221, the second common layer 223, and / or the opposing electrode 230 may be inserted into the contact area CA to connect to the second power line PL2. Therefore, when external pressure is applied to the spacer SPC, a current path can be formed under the spacer SPC.

[0136] Figure 7B This is a plan view of a portion of the display area DA according to another embodiment. Figure 7B In, with Figure 3 The same reference numerals in the accompanying drawings indicate the same elements, and repeated descriptions will not be repeated.

[0137] refer to Figure 7B When the second power line PL2 is arranged in the same way as... Figure 7A When the pixel electrode 210 is on a different layer, because the second power line PL2 can be arranged to overlap with the pixel electrode 210, the second power line PL2 can be provided with a specific width larger than the width of the spacer SPC. Additionally, the second power line PL2 can extend in various suitable directions. In some embodiments, such as Figure 7BAs shown, the second power line PL2 may extend in a second direction (Y direction). In another embodiment, the second power line PL2 may extend in a first direction (X direction). In yet another embodiment, the second power line PL2 may be provided in a mesh structure (e.g., a mesh shape or pattern) in which lines extending in the first direction (X direction) and the second direction (Y direction) are connected to each other (e.g., cross or intersect).

[0138] Figures 8 to 10 This is a cross-sectional view of an organic light-emitting display device according to some embodiments. Figures 8 to 10 In, with Figure 7A The same reference numerals in the accompanying drawings indicate the same elements, and repeated descriptions will not be repeated.

[0139] refer to Figures 8 to 10 An organic light-emitting display device according to one embodiment includes a substrate 100, a plurality of organic light-emitting diodes (OLEDs), a spacer segment (SPC), a second power line PL2 that is a line overlapping the spacer segment (SPC), and a contact region CA, wherein a first common layer 221 of the organic light-emitting diodes (OLEDs) and the second power line PL2 are electrically connected to each other in the contact region CA.

[0140] In this embodiment, the first common layer 221 and the second power line PL2 can be connected to each other via a connecting electrode CM. The connecting electrode CM can be provided in the same layer as the pixel electrode 210 (e.g., on the same layer as the pixel electrode 210) and can be formed of the same material as the pixel electrode 210. For example, the connecting electrode CM may include a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and / or compounds thereof, and a transparent or translucent electrode layer formed on the reflective film. The transparent or translucent electrode layer may include (e.g., is) at least one of ITO, IZO, ZnO (e.g., ZnO2), In2O3, IGO, and AZO.

[0141] exist Figure 8 In this configuration, the contact area CA can provide a hole for exposing the connection electrode CM. The connection electrode CM can be connected to the second power line PL2 through a through-hole VH passing through the second planarization layer 117. The connection electrode CM is arranged to overlap with the spacer SPC and can have an area larger than that of the spacer SPC.

[0142] exist Figure 9In this process, multiple connection electrodes CM can be provided. For example, the connection electrodes CM may include a first connection electrode CM1 and a second connection electrode CM2. The first connection electrode CM1 can be connected to the second power line PL2 through a first via VH1 passing through the second planarization layer 117, and the second connection electrode CM2 can be connected to the second power line PL2 through a second via VH2 passing through the second planarization layer 117.

[0143] about Figure 10 The second power line PL2 can be arranged to overlap only a portion of the spacer SPC or not overlap the spacer SPC at all. In this embodiment, because the first common layer 221 of the organic light-emitting diode OLED is electrically connected to the second power line PL2 via the connecting electrode CM, the spacer SPC does not need to overlap the second power line PL2 entirely. In this case, the design freedom of the second power line PL2 can be increased.

[0144] Figure 11 This is a cross-sectional view of an organic light-emitting display device according to another embodiment. Figure 11 In, with Figure 4 The same reference numerals in the accompanying drawings denote the same elements, and their repeated descriptions will not be repeated here.

[0145] refer to Figure 11 Organic light-emitting display devices may include a sealing substrate 300A, and multiple organic light-emitting diodes (OLEDs) may be sealed with the sealing substrate 300A.

[0146] The sealing substrate 300A is arranged facing the substrate 100, and the sealing substrate 300A and the substrate 100 can be joined by a sealant arranged in the peripheral region PA to surround the display region DA (see...). Figure 1 ).

[0147] The sealant can be an inorganic material. For example, the sealant can be a glass frit. The sealant can be applied by a dispenser or by screen printing. Glass frit generally refers to glass raw materials in powder form, but in this disclosure, glass frit can also refer to a paste state in which the main material, such as SiO2, includes a laser or infrared absorber (e.g., a material that absorbs laser or infrared light), an organic binder, and fillers for reducing the coefficient of thermal expansion. The glass frit in the paste state can be cured by removing the organic binder and moisture via a drying or firing process. The laser or infrared absorber may include (e.g., is) a transition metal compound. A laser can be used as a heat source to cure the sealant and bond the substrate 100 and the sealing substrate 300A.

[0148] When the sealant bonds the substrate 100 and the sealing substrate 300A, the sealant can prevent or reduce the inflow of oxygen and / or moisture into the organic light-emitting diode (OLED) and can improve mechanical strength.

[0149] The sealing substrate 300A can be formed from various suitable materials such as glass, ceramic, plastic and / or metal, which are transparent and mainly contain SiO2. The touchscreen layer, polarizing layer and window can also be arranged on the sealing substrate 300A.

[0150] When the sealing substrate 300A is pressed by external pressure, pressure can be applied to the spacer SPC. In this case, the current in the first common layer 221 and the second common layer 223 on the spacer SPC can be suppressed (e.g., reduced). In this embodiment, a contact area CA connecting the first common layer 221 and the second power line PL2 to each other is provided around the spacer SPC to provide a current path under the spacer SPC. Therefore, a highly reliable organic light-emitting display device can be provided despite external pressure.

[0151] Figure 12 This is a cross-sectional view of an organic light-emitting display device according to another embodiment. Figure 12 In, with Figure 4 The same reference numerals in the accompanying drawings denote the same elements, and their repeated descriptions will not be repeated here.

[0152] refer to Figure 12 Organic light-emitting display devices may include a thin-film encapsulation layer 300B, and multiple organic light-emitting diodes (OLEDs) may be sealed with the thin-film encapsulation layer 300B.

[0153] The thin-film encapsulation layer 300B can cover the display area DA and extend to the outside of the display area DA. The thin-film encapsulation layer 300B may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. For example, the thin-film encapsulation layer 300B may include a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330.

[0154] The first inorganic encapsulation layer 310 covers the opposing electrode 230 and may include (for example) SiO2, SiN XAnd / or SiON. Other layers, such as a capping layer, may be present between the first inorganic encapsulation layer 310 and the opposing electrode 230. The shape of the first inorganic encapsulation layer 310 is formed along the shape of the structure beneath the first inorganic encapsulation layer 310 (e.g., the opposing electrode 230) (e.g., the shape corresponding to the structure beneath the first inorganic encapsulation layer 310), and therefore the upper surface of the first inorganic encapsulation layer 310 may not be flat. An organic encapsulation layer 320 covers the first inorganic encapsulation layer 310. However, unlike the first inorganic encapsulation layer 310, the upper surface of the organic encapsulation layer 320 may be formed to be generally or substantially flat. More specifically, the upper surface of the organic encapsulation layer 320 corresponding to the display area DA may be approximately or approximately flat. The organic encapsulation layer 320 may include (for example,) at least one of polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, and hexamethyldisiloxane. The second inorganic encapsulation layer 330 covers the organic encapsulation layer 320 and may include (for example,) SiO2, SiN... X And / or SiON.

[0155] Even if cracks occur in the thin-film encapsulation layer 300B due to the multilayer structure described above, the cracks may not connect between the first inorganic encapsulation layer 310 and the organic encapsulation layer 320, or between the organic encapsulation layer 320 and the second inorganic encapsulation layer 330. In this way, the formation of penetration paths for external moisture and / or oxygen into the display area DA can be prevented, reduced, or minimized. The touchscreen layer, polarization layer, and window can also be arranged on the thin-film encapsulation layer 300B.

[0156] These embodiments, which can be applied to the embodiments of this disclosure, have now been described. These embodiments may be embodied as individual embodiments or combinations of embodiments.

[0157] As described above, the organic light-emitting display device according to the embodiment includes a common layer and a contact area where common voltage lines are connected to each other around the spacer, thereby reducing or minimizing the impact on display quality even when external pressure is applied.

[0158] It should be understood that the embodiments described herein should be considered in a descriptive sense only and should not be considered for limiting purposes. The description of features or aspects within each embodiment should generally be considered as other similar features or aspects that may be used in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various suitable changes in form and detail may be made herein without departing from the spirit and scope of this disclosure.

Claims

1. An organic light-emitting display device, wherein, The organic light-emitting display device includes: Base; Multiple organic light-emitting diodes on the substrate; Spacers are arranged between the plurality of organic light-emitting diodes and protrude from the upper surface of the substrate; The conductive layer overlaps with the spacer. The contact area exposes the conductive layer on one side of the spacer, and A pixel defining layer, the pixel defining layer covering the edges of the pixel electrodes of the plurality of organic light-emitting diodes and having an opening exposing the center of the pixel electrodes. The common layer and the conductive layer of the plurality of organic light-emitting diodes are connected to each other through the contact area. The common layer includes at least one of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer, and at least one of the electron injection layer, the electron transport layer, the hole injection layer, and the hole transport layer is continuously disposed from the contact area to the upper surface of the spacer. The spacer is separated from all of the pixel electrodes.

2. The organic light-emitting display device according to claim 1, wherein, The contact area surrounds the spacer.

3. The organic light-emitting display device according to claim 1, wherein, The conductive layer is on the same layer as the pixel electrodes of the plurality of organic light-emitting diodes, and is spaced apart from the pixel electrodes.

4. The organic light-emitting display device according to claim 1, wherein, The conductive layer is a line used to transmit the common power supply voltage.

5. The organic light-emitting display device according to claim 1, wherein, When viewed from a plan view, the area of ​​the conductive layer corresponding to the spacer is larger than the area of ​​the spacer.

6. The organic light-emitting display device according to claim 1, wherein, The organic light-emitting display device also includes a first line under the conductive layer. The conductive layer is connected to the first line via a through-hole.

7. The organic light-emitting display device according to claim 6, wherein, The first line is configured to transmit a common power supply voltage.

8. The organic light-emitting display device according to claim 6, in, The conductive layer includes a first connecting electrode and a second connecting electrode, and The first connecting electrode is connected to the first wire through a first through hole, and the second connecting electrode is connected to the first wire through a second through hole.

9. The organic light-emitting display device according to claim 1, wherein, The organic light-emitting display device further includes: Thin-film transistors on the substrate; and A first planarization layer and a second planarization layer are disposed and stacked between the thin-film transistor and the plurality of organic light-emitting diodes. The conductive layer is located between the first planarization layer and the second planarization layer.

10. The organic light-emitting display device according to claim 1, wherein, The contact area includes a plurality of contact holes surrounding the spacer.

11. The organic light-emitting display device according to claim 1, in, The spacer protrudes from the upper surface of the pixel defining layer.

12. The organic light-emitting display device according to claim 1, in, The conductive layer is located on a different layer than the pixel electrodes of the plurality of organic light-emitting diodes.

13. The organic light-emitting display device according to claim 12, wherein, The conductive layer at least partially overlaps with the pixel electrodes of the plurality of organic light-emitting diodes.

14. An organic light-emitting display device, wherein, The organic light-emitting display device includes: Base; Multiple organic light-emitting diodes on the substrate; A pixel defining layer covers the edge of the pixel electrode of each of the organic light-emitting diodes and exposes the central portion of the pixel electrode; A spacer is disposed on the pixel defining layer between the plurality of organic light-emitting diodes and protrudes from the upper surface of the pixel defining layer; The first line overlaps with the spacer; and The contact area exposes the first line on one side of the spacer. The common layer of the plurality of organic light-emitting diodes and the first line are connected to each other through the contact area. The common layer includes at least one of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer, and at least one of the electron injection layer, the electron transport layer, the hole injection layer, and the hole transport layer is continuously disposed from the contact area to the upper surface of the spacer.

15. The organic light-emitting display device according to claim 14, wherein, The contact area surrounds the spacer.

16. The organic light-emitting display device according to claim 14, wherein, The first line is on the same layer as the pixel electrodes of the plurality of organic light-emitting diodes and is spaced apart from the pixel electrodes.

17. The organic light-emitting display device according to claim 14, wherein, The first line is configured to transmit a common power supply voltage.

18. The organic light-emitting display device according to claim 14, wherein, The organic light-emitting display device further includes: Thin-film transistors on the substrate; and A first planarization layer and a second planarization layer are disposed and stacked between the thin-film transistor and the plurality of organic light-emitting diodes. The first line is located between the first planarization layer and the second planarization layer.

19. The organic light-emitting display device according to claim 14, wherein, The organic light-emitting display device further includes a sealed substrate arranged to face the substrate.

20. The organic light-emitting display device according to claim 14, wherein, The organic light-emitting display device further includes a thin-film encapsulation layer, which is arranged to cover the plurality of organic light-emitting diodes. The thin-film encapsulation layer comprises a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked sequentially.

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