Image Installation

Abstract

An image device is provided. The image device includes: a pixel array, including a first pixel array portion that is a part of the pixel array and a second pixel array portion that is the other part of the pixel array and outputs an image; and a color filter array provided on the pixel array, the color filter array including a first color filter pattern on the first pixel array portion and a second color filter pattern on the second pixel array portion, wherein the first color filter pattern includes a plurality of different color filters corresponding to the first pixel array portion and is located in a first pattern area, and the second color filter pattern includes a plurality of different color filters corresponding to the second pixel array portion and is located in a second pattern area, wherein the number of red (R) color filters included in the first color filter pattern is equal to the number of R color filters included in the second color filter pattern.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2019-0130513 filed on October 21, 2019, in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference. Technical Field

[0003] The present disclosure relates to an imaging device. Background Art

[0004] The image sensor in the image device and / or system can digitally capture the image of the subject using light entering via a wide-angle lens. The image sensor of the image device and / or system can be classified into a charge coupled device (CCD) type and a complementary metal oxide semiconductor (CMOS) type. CMOS type image sensor is abbreviated as CIS. CIS includes a plurality of pixels arranged two-dimensionally. Each pixel includes a photodiode. The photodiode converts the incident light into an electrical signal.

[0005] In recent years, with the development of computer and communication industries, the need for image sensors with improved performance has increased for various applications such as digital cameras, video cameras, personal communication systems (PCS), game devices, surveillance cameras, medical micro cameras and robots. In addition, as semiconductor devices become highly integrated, image sensors can also become highly integrated. Summary of the invention

[0006] One aspect is to provide an imaging device with improved reliability.

[0007] According to one aspect of an example embodiment, an image device is provided, comprising: a pixel array, comprising a first pixel array portion that is a part of the pixel array and a second pixel array portion that is the other part of the pixel array, and outputting an image; and a color filter array disposed above the pixel array, the color filter array comprising a first color filter pattern on the first pixel array portion and a second color filter pattern on the second pixel array portion, wherein the first color filter pattern comprises a plurality of different color filters corresponding to the first pixel array portion and is located in a first pattern area, and the second color filter pattern comprises a plurality of different color filters corresponding to the second pixel array portion and is located in a second pattern area, wherein the number of red (R) filters included in the first color filter pattern is equal to the number of R filters included in the second color filter pattern.

[0008] According to another aspect of an example embodiment, an image device is provided, comprising: a pixel array, comprising a first pixel array portion located at a center of the pixel array and a second pixel array portion surrounding the center of the pixel array; a color filter array disposed on top of the pixel array, the color filter array comprising a first pattern area corresponding to the first pixel array portion and a second pattern area corresponding to the second pixel array portion, the first pattern area comprising a first color filter pattern having a first pattern, and the second pattern area comprising a second color filter pattern having a second pattern different from the first pattern, wherein the first color filter pattern is arranged in an array of N x N repeating color filter patterns, and the second color filter pattern is arranged in an array of M x M repeating color filter patterns that do not include the N x N repeating color filter pattern, wherein N is a natural number greater than 1, and M is a natural number greater than N, and wherein the first pattern area and the second pattern area respectively comprise R and B color filters.

[0009] According to another aspect of an example embodiment, there is provided an image device, comprising: a pixel array; and a color filter array disposed on top of the pixel array, the color filter array comprising a first pattern area located at a center of the color filter array and having a first pattern, a second pattern area surrounding the first pattern area and having a second pattern different from the first pattern, and a third pattern area surrounding the second pattern area and having a third pattern different from the first pattern and the second pattern, wherein the first pattern area comprises an array of N x N repeating color filter patterns, the second pattern area comprises an array of M x M repeating color filter patterns that does not include the N x N repeating color filter pattern, and the third pattern area comprises an array of T x T repeating color filter patterns that does not include the M x M repeating color filter pattern, and wherein each of N, M, and T is a natural number greater than 1.

[0010] According to another aspect of the example embodiment, there is provided a pixel array for outputting an image; and a color filter array disposed on top of the pixel array, the color filter array comprising a first pattern area corresponding to a central portion of the pixel array and having color filters arranged in a first pattern, and a second pattern area corresponding to an edge portion of the pixel array and having color filters arranged in a second pattern different from the first pattern. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The above and other aspects will become more apparent by describing in detail exemplary embodiments thereof with reference to the accompanying drawings, in which:

[0012] Figure 1 is an exemplary diagram explaining lens shading;

[0013] Figure 2 is an exemplary diagram explaining lens shading correction;

[0014] Figure 3 is an exemplary block diagram illustrating an imaging system according to some embodiments;

[0015] Figure 4 is a diagram illustrating the Figure 3 An exemplary block diagram of an image sensor of an imaging system;

[0016] Figure 5 According to some embodiments, Figure 4 An equivalent circuit diagram of a pixel array of an image sensor;

[0017] Figure 6 is a diagram illustrating the Figure 4 a plan view of an arrangement of pixel regions of a pixel array of an image sensor;

[0018] Figure 7 According to some embodiments, Figure 4 An exemplary conceptual diagram of a plan view of a color filter array of an image sensor of FIG.

[0019] Figure 8 is a diagram illustrating the Figure 7 An exemplary plan view of a first pattern area I of a color filter array;

[0020] Fig. 9 It is along Figure 8 A cross-sectional view taken along line AA' of the first pattern area I;

[0021] Fig.10 It is a graphic Figure 7 An exemplary plan view of a second pattern area II;

[0022] Fig.11 It is along Fig.10 A cross-sectional view taken along line BB' of the second pattern region II;

[0023] Fig.12 is an exemplary circuit diagram illustrating a tetra pixel array according to some embodiments;

[0024] Fig.13 is an exemplary circuit diagram using a Bayer pixel array as a quaternary pattern according to some embodiments;

[0025] Fig.14 According to some embodiments, Figure 4 An exemplary conceptual diagram of a plan view of a color filter array of an image sensor of FIG.

[0026] Fig.15 is a diagram illustrating the Fig.14An exemplary plan view of a third pattern area III of a color filter array;

[0027] Fig.16 It is along Fig.15 A cross-sectional view taken along line CC' of the third pattern region III;

[0028] Fig.17 is an exemplary circuit diagram illustrating a nine-element (nona) pixel array according to some embodiments;

[0029] Fig.18 is an exemplary circuit diagram using a Bayer pixel array as a nine-element pattern according to some embodiments;

[0030] Fig.19 is a diagram illustrating the Figure 4 An exemplary plan view of a color filter array of an image sensor of FIG.

[0031] Fig. 20 is an exemplary plan view illustrating a binning operation for a quaternary pattern according to some embodiments; and

[0032] Fig.21 is an exemplary plan view illustrating a merging operation for a nine-tuple pattern according to some embodiments. DETAILED DESCRIPTION

[0033] The aspects of the present disclosure are not limited to those set forth herein. The above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referring to the following detailed description.

[0034] Figure 1 is an exemplary diagram explaining lens shading.

[0035] refer to Figure 1 The imaging device and / or system includes a wide-angle lens 20 through which light 15 from a subject 10 is incident.

[0036] The wide-angle lens 20 may have a curved shape at its periphery. That is, the amount of light 15 incident at the edge of the wide-angle lens 20 after being reflected from the subject 10 may be less than the amount of light 15 incident at the center of the wide-angle lens 20.

[0037] This can be easily seen from the simplified plan view illustration 25. That is, the amount of light (e.g., brightness) entering the edge portion EP of the captured image 40 of the imaging device and / or system through the wide angle lens 20 may be less than the amount of light in the center portion CP of the captured image 40.

[0038] In order to correct this phenomenon, various methods can be used. As one of the various methods, reference Figure 2 Describes Lens Shading Correction (LSC).

[0039] Figure 2 is an exemplary diagram for explaining lens shading correction.

[0040] refer to Figure 1 and Figure 2 , lens shading correction may be performed as an example for correcting the image 40 captured through the wide-angle lens 20 .

[0041] As described above, due to the curved shape of the edge of the wide-angle lens 20 , the amount of light may be insufficient at the edge portion of the captured image 40 , which may cause lens shading (or sensitivity non-uniformity) of the captured image 40 .

[0042] Specifically, in the case of a mobile camera, since the number of pixels is large and the size of the lens is small, the lens shading may be more prominent. Therefore, the captured image 40 may be divided into a plurality of blocks and stored in a memory by applying different weight values ​​50 to the center portion and the edge portion of each block. Then, the lens shading correction may be performed using the stored values. A detailed description thereof is disclosed in U.S. Patent Application Publication No. 2007-285552 entitled “Lens Shading Correction Device and Method in Image Sensor”.

[0043] However, the noise included in the captured image 40 is amplified together with the weight value 50 used in the lens shading correction. In other words, the noise is less amplified for the center portion 62 of the captured image 40 after being multiplied by the weight value 50. However, the noise may be significantly amplified for the edge portion 64 of the captured image 40 after being multiplied by the weight value 50. Thus, when the environment for capturing the subject 10 has low illumination, the image quality of the captured image 40 may be greatly deteriorated.

[0044] Therefore, in order to avoid noise amplification according to the weight value 50 for lens shading correction, the noise of the edge portion 64 of the previously captured image 40 should be reduced before the lens shading correction.

[0045] In some methods for reducing the noise of edge portion 64 , the noise of edge portion 64 is reduced based on information of the same color filter pixels of edge portion 64 .

[0046] However, image sensors in image devices and / or image systems generally use a Bayer pattern for color filter pixels. That is, in the case of the Bayer pattern, the same color filter pixels are not adjacent to each other, which can reduce spatial correlation that causes limitations in reducing noise.

[0047] Therefore, in an image device and / or an image system according to some embodiments disclosed herein, a large pattern such as a tetra, nona, or hexa-deca pattern is used at the edge of a color filter array. Therefore, by using a color filter array including a pattern in which the same color filter pixels are adjacent to each other, noise in the captured image 40 can be more effectively reduced. Hereinafter, an image device according to some embodiments will be described in detail.

[0048] Figure 3 is an exemplary block diagram illustrating an imaging system according to some embodiments. Figure 4 It is a graphic Figure 3 An exemplary block diagram of an image sensor of an imaging system.

[0049] refer to Figure 3 and Figure 4 , the image system according to some embodiments may include an application processor (AP) 400, an image sensor 100, a binning unit 200, and an image signal processor (ISP) 300. The application processor (AP) 400 may include one or more microprocessors.

[0050] In some embodiments, the image sensor 100 may include a color filter array 1010, a pixel array 1000 disposed under the color filter array 1010, and a peripheral circuit for driving the pixel array 1000. The peripheral circuit may drive the pixel array 1000 by a capture signal Cap_sig received from the application processor 400.

[0051] The image signal processor 300 may receive the image information Img_Inf from the image sensor 100 to perform binning, demosaicing, and / or upscaling operations, but the operation of the image signal processor 300 is not limited thereto.

[0052] The merging unit 200 included in the image signal processor 300 may determine whether to perform merging of the pixel array 100. The image signal processor (ISP) 300 may include one or more processors and a memory storing computer code, which when executed implements the functions of the merging unit 200. In other embodiments, the merging unit 200 may be provided as a hardware circuit.

[0053] More specifically, the image sensor 100 may include a timing generator 2100, a row decoder 2200, a row driver 2300, a correlated double sampler (CDS) 2500, an analog-to-digital converter (ADC) 2600, a latch 2700, a column decoder 2800, etc., but the configuration of the image sensor 100 is not limited thereto.

[0054] The pixel array 1000 is driven by receiving a plurality of driving signals such as a row selection signal, a reset signal, and a charge transfer signal from the row driver 2300. In addition, the converted electrical output signal is provided to the correlated double sampler 2500 via a vertical signal line. The timing generator 2100 provides a timing signal and a control signal to the row decoder 2200 and the column decoder 2800.

[0055] The row driver 2300 provides a plurality of driving signals to the pixel array 1000 to drive a plurality of unit pixels according to the decoding result of the row decoder 2200. In general, when the unit pixels are arranged in a matrix, a driving signal is provided to each row.

[0056] The correlated double sampler 2500 receives an output signal from the pixel array 1000 through a vertical signal line, and holds and samples the received signal. That is, the correlated double sampler 2500 double samples a certain noise level and signal level according to the output signal, and outputs a difference level corresponding to the difference between the noise level and the signal level. The analog-to-digital converter 2600 converts the analog signal corresponding to the difference level into a digital signal, and outputs the digital signal.

[0057] The correlated double sampler 2500 may receive digital information from a Bayer pattern pixel array and output values ​​of another pattern, such as a four-element pattern or a nine-element pattern.

[0058] The latch 2700 may latch the digital signal into the image information Img_Inf. The latched image information Img_Inf may be sequentially output to the image signal processor 300 according to the decoding result of the column decoder 2800.

[0059] Figure 5 According to some embodiments, Figure 4 FIG. 1 is an equivalent circuit diagram of a pixel array of the image sensor 100 .

[0060] refer to Figure 5, the pixels P are arranged in a matrix to form a pixel array 1000. Each of the pixels P includes a phototransistor 11, a floating diffusion region 13, a charge transfer transistor 15, a drive transistor 17, a reset transistor 18, and a selection transistor 19. The functions of the phototransistor 11, the floating diffusion region 13, the charge transfer transistor 15, the drive transistor 17, the reset transistor 18, and the selection transistor 19 will be described with respect to the pixels P(i,j), P(i,j+1), P(i,j+2), P(i,j+3), ... arranged in the i-th row.

[0061] The phototransistor 11 absorbs incident light and accumulates charges corresponding to the amount of light. As the phototransistor 11, a photodiode, a photosensitive transistor, a photogate, a pinned photodiode, or a combination thereof may be used. Figure 5 , a photodiode is illustrated as an example of the phototransistor 11 according to an embodiment.

[0062] Each phototransistor 11 is coupled to each charge transfer transistor 15, and the charge transfer transistor 15 transfers the accumulated charge to the floating diffusion region 13. The floating diffusion region 13 converts the charge into a voltage, and has a parasitic capacitance so as to accumulatively store the charge.

[0063] The driving transistor 17 illustrated as a source follower amplifier amplifies a change in the potential of the floating diffusion region 13 receiving the charges accumulated in each phototransistor 11 , and outputs the accumulated charges to the output line Vout.

[0064] The reset transistor 18 periodically resets the floating diffusion region 13. The reset transistor 18 may be formed of a single MOS transistor that is driven by a bias provided via a reset line RX(i) for applying a predetermined bias (i.e., a reset signal). When the reset transistor 18 is turned on by the bias provided via the reset line RX(i), a predetermined potential (e.g., a source voltage VDD) provided to the drain of the reset transistor 18 is transmitted to the floating diffusion region 13.

[0065] The selection transistor 19 is used to select the pixel P to be read on a row basis. The selection transistor 19 can be formed by a signal MOS transistor, which is driven by a bias (e.g., a row selection signal) provided via the row selection line SEL (i). When the selection transistor 19 is turned on by the bias provided via the row selection line SEL (i), a predetermined potential (e.g., source voltage VDD) provided to the drain of the selection transistor 19 is transmitted to the drain region of the drive transistor 17.

[0066] A transfer line TX(i) for applying a bias to the charge transfer transistor 15, a reset line RX(i) for applying a bias to the reset transistor 18, and a selection line SEL(i) for applying a bias to the selection transistor 19 may be arranged to extend substantially parallel to each other in the row direction.

[0067] Figure 6 is a diagram illustrating the Figure 4 A plan view of the arrangement of pixel regions of a pixel array of an image sensor.

[0068] refer to Figure 6 , the pixel array 1000 may include a plurality of pixel regions P1 to P7, P101 to P107, P201 to P207, P301 to P307, P401 to P407, P501 to P507, and P601 to P607.

[0069] The plurality of pixel regions P1 to P7, P101 to P107, P201 to P207, P301 to P307, P401 to P407, P501 to P507, and P601 to P607 may be defined as a plurality of rows and a plurality of columns. Figure 6 Only 49 pixel regions of 7 rows and 7 columns are illustrated, and for simplicity and conciseness of description, only some pixel regions are illustrated, and the embodiment is not limited thereto. That is, the number of pixel regions may be applied differently.

[0070] The signal lines of the rows R1 to R7 may be connected to respective rows of the plurality of pixel regions P1 to P7, P101 to P107, P201 to P207, P301 to P307, P401 to P407, P501 to P507, P601 to P607. Each of the signal lines of the rows R1 to R7 may correspond to Figure 5 That is, a signal can be applied to the entire pixel area of ​​the row through one of the signal lines of the rows R1 to R7.

[0071] The signal lines of columns C1 to C7 may be connected to respective columns of the plurality of pixel regions P1 to P7, P101 to P107, P201 to P207, P301 to P307, P401 to P407, P501 to P507, P601 to P607. Each of the signal lines of columns C1 to C7 may correspond to Figure 5 That is, the signal can be output to the pixel area of ​​the column through one of the signal lines of columns C1 to C7.

[0072] On top of the pixel array 1000, a color filter array 1010 may be provided. The color filter array 1010 may use a large pattern such as a four-element, nine-element, or sixteen-element pattern at its edge portion. The color filter array 1010 according to some embodiments may be referred to as Figure 7 Specific description.

[0073] Figure 7 According to some embodiments, Figure 4 An exemplary conceptual diagram of a plan view of a color filter array of an image sensor.

[0074] refer to Figure 7 According to some embodiments, the color filter array 1010 may include a first pattern region I forming a central portion of the color filter array and a second pattern region II forming an edge portion corresponding to the rest of the color filter array except the first pattern region I.

[0075] Although in Figure 7 121 color filters are shown in the array, and only some color filters are shown for simplicity and conciseness of the description, and the embodiment is not limited thereto. The number of color filters in the color filter array 1010 may be applied differently. For example, note that Figure 7 The color filter array 1010 assumes 11 rows and 11 columns of the corresponding pixel array 1000, that is, includes rows R1 to R11 and columns C1 to C11.

[0076] The color filters of the color filter array 1010 may be disposed on the pixel array 1000 and connected to the signal lines of the rows R1 to R11 and the signal lines of the columns C1 to C11. The first pattern area I of the color filter array 1010 according to some embodiments may be configured as a Bayer pattern, and the second pattern area II of the color filter array 1010 may be configured as a quadruple pattern. Without limitation thereto, the first pattern area I may be configured as a quadruple pattern, and the second pattern area II may be configured as a Bayer pattern. Alternatively, a nine-element pattern may be used instead of a quadruple pattern. The configuration pattern of each pattern area is not limited thereto.

[0077] The color filter array of the first pattern area I may have an N x N (N is a natural number of 2 or greater) color filter pattern, and the color filter array of the second pattern area II may have an M x M (M is a natural number of 2 or greater) color filter pattern that does not include the N x N color filter pattern. In this configuration, in some embodiments, the number of red (R) color filters in the first pattern area I may be equal to the number of R color filters in the second pattern area II. Alternatively or additionally, in other embodiments, the number of blue (B) color filters in the first pattern area I may be equal to the number of B color filters in the second pattern area II. Alternatively or additionally, in other embodiments, the number of green (G) color filters in the first pattern area I may be equal to the number of G color filters in the second pattern area II.

[0078] Alternatively or alternatively, in some other embodiments, the number of B filters in the first pattern area I may be equal to the number of R filters in the second pattern area II, and the number of R filters in the first pattern area I may be equal to the number of B filters in the second pattern area II, but the embodiments are not limited thereto.

[0079] Figure 8 is a diagram illustrating the Figure 7 FIG. 1 is an exemplary plan view of a first pattern area I of a color filter array.

[0080] refer to Figure 8 , the configuration diagram shows that the first pattern area I is configured as a Bayer pattern, but the embodiment is not limited thereto. That is, in other embodiments, the first pattern area I can be a four-element pattern, a nine-element pattern, etc.

[0081] Although Figure 8 The illustrated Bayer pattern has only 16 color filters in 4 rows and 4 columns, and only some color filters are illustrated for simplicity and conciseness, and the embodiment is not limited thereto. That is, the number of color filters of the Bayer pattern may be applied differently.

[0082] The Bayer pattern may include color filters of three colors: red, green, and blue. That is, the R color filter R may be a filter that transmits only red (R) light, the G filters Gr and Gb may be filters that transmit only green (G) light, and the B color filter B may be a filter that transmits only blue (B) light. In the Bayer pattern, as Figure 8 As shown, the R, G, and B color filters R, Gb, Gr, and B may be arranged to have a predetermined pattern. Figure 8 As shown, the G filters may be arranged such that the G filter Gr is located next to the R filter R, and the G filter Gb is located next to the B filter B.

[0083] That is, each color filter (eg, R, Gr, Gb, or B) may form an area of ​​a 1x1 matrix to form a Bayer pattern. According to some embodiments, Figure 7 The edge portion of the color filter array 1010 or the second pattern region II may be configured as follows Fig.10 The quaternion pattern shown.

[0084] Fig. 9 It is along Figure 8 A cross-sectional view taken along line AA' of the first pattern area I.

[0085] refer to Fig. 9The image sensor according to some embodiments includes substrates 160R and 160Gr, phototransistors 11R and 11Gr, an anti-reflection film 150, a side anti-reflection film 140, color filters R and Gr, an upper planarization layer 120, a lower planarization layer 130, and microlenses 110-1 and 110-2, as shown in FIG. Fig. 9 shown.

[0086] The substrates 160R and 160Gr may be, for example, P-type or N-type bulk substrates, or P-type bulk substrates on which P-type or N-type epitaxial layers are grown, or N-type bulk substrates on which P-type or N-type epitaxial layers are grown. In addition to semiconductor substrates, the substrates 160R and 160Gr may also be substrates such as organic plastic substrates.

[0087] According to various embodiments, the phototransistors 11R and 11Gr may be photodiodes, photosensitive transistors, photogates, clamped photodiodes, or a combination thereof.

[0088] The anti-reflection film 150 and the side anti-reflection film 140 can prevent light incident on the microlenses 110-1 and 110-2 from the outside from penetrating into the R and Gr regions. The anti-reflection film 150 and the side anti-reflection film 140 can be formed of an insulating film such as a silicon dioxide film, a silicon nitride film, a silicon oxynitride film, a resin, a combination thereof, or a stack thereof.

[0089] The upper planarization layer 120 and the lower planarization layer 130 may be formed flat with the color filters R and Gr interposed therebetween. The upper planarization layer 120 and the lower planarization layer 130 may include at least one of a silicon dioxide-based material, a silicon nitride-based material, a resin, or a combination thereof.

[0090] Fig.10 is a diagram illustrating the Figure 7 FIG. 1 is an exemplary plan view of a second pattern region II of a color filter array.

[0091] refer to Fig.10 , Figure 7 The second pattern area II can be configured as a quaternary pattern. Fig.10 The illustrated quaternary pattern has 16 color filters in 4 rows and 4 columns, and only some color filters are illustrated for simplicity and conciseness, and the embodiment is not limited thereto. That is, the number of color filters of the quaternary pattern may be applied differently.

[0092] The quaternary pattern may include color filters in three colors of red, green, and blue. That is, the R color filter R may be a filter that transmits only red (R) light, the G color filters Gr and Gb may be filters that transmit only green (G) light, and the B color filter B may be a filter that transmits only blue (B) light.

[0093] In the quaternion pattern, Fig.10 As shown, the R, G, and B color filters R, Gb, Gr, and B may be arranged to have a predetermined pattern. Fig.10 As shown, the G filters may be arranged such that the G filter Gr is located next to the R filter R, and the G filter Gb is located next to the B filter B.

[0094] That is, each color filter (eg, R, Gr, Gb, or B) may form an area of ​​a 2x2 matrix to form a quaternary pattern. Fig.10 As shown, each color filter (e.g., R, Gr, Gb, or B) can form a 2x2 matrix, and four 2x2 matrices can be included in a quaternary pattern. In the quaternary pattern, the same color filters (e.g., R, Gr, Gb, or B) can be adjacent to each other to increase spatial similarity. Thus, the noise caused by the merging performed by the merging unit to be described later can be effectively reduced.

[0095] The color filter array of the first pattern area I may have an N x N (N is a natural number of 2 or greater) repeating color filter pattern, and the color filter array of the second pattern area II may have an M x M (M is a natural number of 2 or greater) repeating color filter pattern that does not include the N x N repeating color filter pattern. In this configuration, in some embodiments, the number of R filters in each of the first pattern area I and the second pattern area II may be the same. Alternatively or additionally, in some other embodiments, the number of B filters in each of the first pattern area I and the second pattern area II may be the same. Alternatively or additionally, in other embodiments, the number of G filters in each of the first pattern area I and the second pattern area II may be the same.

[0096] Alternatively or alternatively, in other embodiments, the number of B filters in the first pattern area I may be equal to the number of R filters in the second pattern area II, and the number of R filters in the first pattern area I may be equal to the number of B filters in the second pattern area II, but the embodiments are not limited thereto.

[0097] Fig.11 It is along Fig.10 A cross-sectional view taken along line BB' of the second pattern region II. Fig. 9 , and because the two figures use similar reference indicators, their repeated description will be omitted for the sake of brevity.

[0098] Fig.12 is an exemplary circuit diagram illustrating a four-element pixel array according to some embodiments. Figure 5 and the two figures use similar reference indicators, and for the sake of brevity, their repeated description will be omitted, and the subsequent description will mainly focus on Figure 5 difference.

[0099] refer to Fig.12 , the color filter array may be formed in a Bayer pattern, and the structure of the pixel array 1000 may be changed to implement an image sensor having a quaternary pattern. Figure 5 The phototransistor 11 is provided as a phototransistor including a first phototransistor 11-1, a second phototransistor 11-2, a third phototransistor 11-3 and a fourth phototransistor 11-4, and Figure 5 The charge transfer transistors 15 are provided as a first charge transfer transistor 15-1, a second charge transfer transistor 15-2, a third charge transfer transistor 15-3 and a fourth charge transfer transistor 15-4, as shown in FIG. Fig.12 shown.

[0100] Drains of the first to fourth charge transfer transistors 15 - 1 to 15 - 4 may be connected to each other and to the floating diffusion region 13 to implement a quaternary pattern.

[0101] Fig.13 is an exemplary circuit diagram using a Bayer pixel array as a quad pattern.

[0102] refer to Fig.13 , after both the color filter array and the pixel array are formed into a Bayer pattern, a MUX 170 may be provided before the correlated double sampler 2500 to connect the Vout terminals of the respective pixels to form a quaternary pattern.

[0103] The correlated double sampler 2500 may receive an output from the pixel array 1000 including a Bayer pattern and generate the same output as the pixel array 1000 including a quadruple pattern.

[0104] Fig.14 According to some embodiments, Figure 4 1 is an exemplary conceptual diagram of a plan view of a color filter array of an image sensor. For reference, except Figure 7 In addition to the first pattern area I and the second pattern area II of the color filter array, the color filter array 1020 may further include a third pattern area III. For example, the third pattern area III may surround Figure 7 The second pattern area II of the color filter array. Assuming that Fig.14 The first pattern area I and the second pattern area II shown are configured as a Bayer pattern and a quaternary pattern respectively. Figure 7 The first pattern area I and the second pattern area II are similar to the reference Figure 7 What is illustrated and described, and thus for the sake of brevity will mainly be described, is the third pattern region III. Fig.14The pattern of each pattern area of ​​the color filter array 1020 may include various combinations, but is not limited thereto.

[0105] refer to Fig.14 , the color filter array 1020 may include a first pattern area I forming a central portion, a second pattern area II surrounding the first pattern area I, and a third pattern area III forming an edge portion corresponding to the rest of the color filter array 1020 except the first pattern area I and the second pattern area II. Fig.14 The shape of each of the first pattern area I, the second pattern area II, and the third pattern area III shown is merely an example, and in other embodiments, the shape may be changed as long as the first pattern area I forms a central portion, the second pattern area II surrounds the first pattern area I, and the third pattern area III surrounds the second pattern area II to form an edge portion of the color filter array 1020.

[0106] Although Fig.14 An array of 256 color filters on a pixel array of 16 rows and 16 columns is shown, and only some color filters are illustrated for simplicity and conciseness, and the embodiment is not limited thereto. The number of color filters in the color filter array 1020 may be applied differently. For example, note that Fig.14 The color filter array 1020 assumes 16 rows and 16 columns of the corresponding pixel array 1000, that is, includes rows R1 to R16 and columns C1 to C16.

[0107] The color filters of the color filter array 1020 may be disposed on the pixel array 1000 and connected to the signal lines of the rows R1 to R16 and the signal lines of the columns C1 to C16. The first pattern region I of the color filter array 1020 according to some embodiments may be configured as follows: Figure 8 In addition, the second pattern area II of the color filter array 1020 according to some embodiments may be configured as follows: Fig.10 The third pattern region III of the color filter array 1020 according to some embodiments may be configured as follows Fig.15 The nine-element pattern shown.

[0108] Fig.15 is a diagram illustrating the Fig.14 FIG. 1 is an exemplary plan view of a third pattern area III of a color filter array.

[0109] Although Fig.15 The nine-element pattern is shown to have 36 color filters in 6 rows and 6 columns, and only some color filters are shown for simplicity and conciseness, and the embodiment is not limited thereto. That is, the number of color filters of the nine-element pattern may be applied differently.

[0110] The nine-element pattern may include color filters in three colors: red, green, and blue. That is, the R color filter R may be a filter that transmits only red (R) light, the G color filters Gr and Gb may be filters that transmit only green (G) light, and the B color filter B may be a filter that transmits only blue (B) light. In the nine-element pattern, as shown in FIG. Fig.15 As shown, the R, G, and B color filters R, Gb, Gr, and B may be arranged to have a predetermined pattern. Fig.15 As shown, the G filters may be arranged such that the G filter Gr is located next to the R filter R, and the G filter Gb is located next to the B filter B.

[0111] That is, each color filter (eg, R, Gr, Gb, or B) may form a region of a 3x3 matrix to form a nine-element pattern. Fig.15 As shown, each color filter (e.g., R, Gr, Gb, or B) can form a 3x3 matrix, and four 3x3 matrices can be included in a nine-element pattern. In the nine-element pattern, the same color filters (e.g., R, Gr, Gb, or B) can be adjacent to each other to increase spatial similarity. Thus, the noise caused by the merging performed by the merging unit to be described later can be effectively reduced. The number of pattern areas included in the color filter array 1020 according to some embodiments is not limited thereto.

[0112] In addition, the type of pattern corresponding to each pattern area of ​​the color filter array 1020 is not limited thereto. Fig.14 In the color filter array 1020, in some other embodiments, the first pattern area I can be configured as a four-element pattern, the second pattern area II can be configured as a nine-element pattern, and the third pattern area III can be configured as a sixteen-element pattern.

[0113] Fig.16 It is along Fig.15 A cross-sectional view taken along line CC' of the third pattern area III.

[0114] Because the description is similar to Fig. 9 and Fig.11 description, and because Fig.16 Use with Fig. 9 and Fig.11 For similar reference designators, repeated descriptions thereof will be omitted for the sake of brevity.

[0115] Fig.17 is an exemplary circuit diagram illustrating a nine-element pixel array according to some embodiments. Figure 5 and Fig.12 description, and because Fig.17 Use with Figure 5 and Fig.12Similar reference indicators will be omitted for brevity, and the subsequent description will focus mainly on Figure 5 difference.

[0116] Fig.17 The phototransistor 11 is provided as a phototransistor including a first phototransistor 11-1, a second phototransistor 11-2, a third phototransistor 11-3, a fourth phototransistor 11-4, a fifth phototransistor 11-5, a sixth phototransistor 11-6, a seventh phototransistor 11-7, an eighth phototransistor 11-8 and a ninth phototransistor 11-9, and Fig.17 The charge transfer transistors 15 are provided as a first charge transfer transistor 15-1, a second charge transfer transistor 15-2, a third charge transfer transistor 15-3, a fourth charge transfer transistor 15-4, a fifth charge transfer transistor 15-5, a sixth charge transfer transistor 15-6, a seventh charge transfer transistor 15-7, an eighth charge transfer transistor 15-8 and a ninth charge transfer transistor 15-9, as shown in FIG. Fig.17 Reference Fig.17 , the drains of the first to ninth charge transfer transistors 15-1 to 15-9 may be connected to the floating diffusion region 13 to form a nine-element pixel array. In this case, the color filter array may have a Bayer pattern.

[0117] Fig.18 is an exemplary circuit diagram using a Bayer pixel array as a nine-element pattern according to some embodiments.

[0118] refer to Fig.18 , the output line Vout of the pixel array may be connected to the MUX 170 to form a nine-element pattern.

[0119] The correlated double sampler 2500 may receive the output of the pixel array 1000 including the Bayer pattern through the MUX 170 to generate the same output as the nine-element pattern pixel array 1000 .

[0120] Fig.19 is a diagram illustrating the Figure 4 00147] An exemplary plan view of a color filter array of an image sensor of FIG.

[0121] refer to Fig.19 , the color filter array 1030 may include a nine-element pattern (III) located at the center, a four-element pattern (II) surrounding the nine-element pattern, and a Bayer pattern (I) surrounding the four-element pattern. However, Fig.19 The pattern arrangement in the color filter array is not limited thereto. For example, in other embodiments, the four-element pattern may be located in the center, the nine-element pattern may surround the four-element pattern, and the Bayer pattern may surround the nine-element pattern.

[0122] The color filter array of the third pattern area III may have a T x T (T is a natural number of 2 or greater) color filter pattern, the color filter array of the second pattern area II may have an M x M (M is a natural number of 2 or greater) color filter pattern excluding the T x T color filter pattern, and the color filter array of the first pattern area I may have an N x N (N is a natural number of 2 or greater) color filter pattern excluding the M x M color filter pattern. In this configuration, in some embodiments, the number of R filters in each of the first pattern area I, the second pattern area II, and the third pattern area III may be the same. Alternatively or additionally, in some other embodiments, the number of B filters in each of the first pattern area I, the second pattern area II, and the third pattern area III may be the same. Alternatively or additionally, in some other embodiments, the number of G filters in each of the first pattern area I, the second pattern area II, and the third pattern area III may be the same.

[0123] Alternatively or alternatively, in some other embodiments, the number of B filters in the first pattern area I may be equal to the number of R filters in the second pattern area II, and the number of R filters in the first pattern area I may be equal to the number of B filters in the second pattern area II, but the embodiments are not limited thereto.

[0124] Fig. 20 is an exemplary plan view illustrating a merging operation for a quad pattern according to some embodiments. Fig.21 is an exemplary plan view illustrating a merging operation for a nine-tuple pattern according to some embodiments.

[0125] refer to Figure 3 and Fig. 20 , the merging unit 200 in the image signal processor 300 may perform merging on the image information Img_Inf received from the image sensor 100. That is, for example, the image signal processor 300 may execute computer code to perform merging on the image information Img_Inf, or control a hardware merging unit to perform merging. Alternatively, the hardware merging unit may be configured to perform merging itself.

[0126] The merging unit 200 may determine the brightness information (e.g., illumination or brightness) of the current frame in the capture signal Cap_sig received from the application processor 400. The capture signal Cap_sig may include, for example, an exposure time, an analog gain, and / or a digital gain for exposing the image sensor 100 to capture an image of a subject. However, the information included in the capture signal Cap_sig is not limited thereto. That is, the application processor 400 may output the capture signal Cap_sig by adjusting the exposure time, the analog gain, or the digital gain for capturing an image.

[0127] For example, the application processor 400 may output a capture signal Cap_sig having a relatively low exposure time, analog gain, and / or digital gain in a bright environment such as during the day. As another example, the application processor 400 may output a capture signal Cap_sig having a relatively high exposure time, analog gain, and / or digital gain in a dark environment such as at night.

[0128] The merging unit 200 can determine whether to perform merging by determining whether the amount of light (e.g., illuminance or brightness) of the current frame is sufficient based on the capture signal Cap_sig. For example, if it is determined that the amount of light (e.g., illuminance or brightness) of the current frame is sufficient, the merging unit 200 can determine not to perform merging. For example, if the amount of light of the current frame is greater than or equal to the merging threshold, the merging unit 200 can determine not to perform merging. As another example, if it is determined that the amount of light (e.g., illuminance or brightness) of the current frame is insufficient, the merging unit 200 can determine to perform merging. For example, if the amount of light of the current frame is less than the merging threshold, the merging unit 200 can determine to perform merging.

[0129] refer to Figure 3 and Fig. 20 , in each of the first block area A1, the second block area A2, the third block area A3, and the fourth block area A4 of each color filter pattern including the quaternary pattern, imaging can be performed using only pixel area information about some color filters. For example, in the first block area A1, only the output of the first row R1 and the first column C1 and the output of the second row R2 and the second column C2 can be used for imaging (e.g. Fig. 20 ), and the entire first block area A1 can be used as a pixel for the red filter R. Similarly, in the second block area A2, only the output of the first row R1 and the third column C3 and the output of the second row R2 and the fourth column C4 can be used for imaging (as shown in FIG. Fig. 20 ), and the entire second block area A2 can be used as a pixel for the green filter Gr. A similar concept can be applied to the third block area A3 and the fourth block area A4. By performing the above operation with respect to Figure 3 and Fig. 20 The described combination can significantly improve the operating speed of the image sensor by reducing the amount of transmitted data and increasing the signal-to-noise ratio (SNR) of the image sensor.

[0130] refer to Figure 3 and Fig.21, in each of the first block area B1, the second block area B2, the third block area B3, and the fourth block area B4 of each color filter pattern including the nine-element pattern, imaging can be performed using only pixel area information about some color filters. For example, in the first block area B1, only the output of the eleventh row R11 and the second column C2, the output of the twelfth row R12 and the fourth column C4, and the output of the thirteenth row R13 and the third column C3 can be used for imaging (e.g. Fig.21 ), and the entire first block area B1 can be used as a pixel for the red filter R. Similarly, in the second block area B2, only the output of the eleventh row R11 and the fifth column C5, the output of the twelfth row R12 and the seventh column C7, and the output of the thirteenth row R13 and the sixth column C6 can be used for imaging (as shown in FIG. Fig.21 ), and the entire second block area B2 can be used as a pixel for the green filter Gr. A similar concept applies to the third block area B3 and the fourth block area B4. Fig. 20 Similarly Fig.21 By performing merging of the first to fourth block areas B1 to B4, a signal-to-noise ratio (SNR) can be increased.

[0131] While various exemplary embodiments have been illustrated and described above, it will be apparent to those of ordinary skill in the art that various changes and modifications may be made thereto without departing from the spirit and scope of the inventive concept as set forth in the following claims.

Claims

1. An imaging device, comprising: a pixel array comprising a first pixel array portion that is a portion of the pixel array and a second pixel array portion that is another portion of the pixel array, the pixel array outputting an image; and a color filter array disposed above the pixel array, the color filter array comprising a first color filter pattern repeated on the first pixel array portion and a second color filter pattern repeated on the second pixel array portion, each of the first color filter pattern and the second color filter pattern comprising a plurality of different color filters, each color filter being positioned adjacent to another color filter, each color filter corresponding to a pixel of the pixel array, wherein the first color filter pattern is located at the center of the color filter array, and the second color filter pattern surrounds the first color filter pattern, wherein the plurality of different color filters included in the first color filter pattern are arranged in an N×N array, the plurality of different color filters included in the second color filter pattern are arranged in an M×M array, each of N and M is a natural number of 2 or greater, and M is a natural number greater than N, and The number of red color filters included in the first color filter pattern is equal to the number of red color filters included in the second color filter pattern.

2. The imaging device according to claim 1, further comprising: A merging unit is configured to selectively perform merging on the images based on the amount of light in a current frame of the images.

3. The imaging device according to claim 1, wherein: The number of blue color filters included in the first color filter pattern is equal to the number of blue color filters included in the second color filter pattern.

4. The imaging device according to claim 3, wherein: The number of blue color filters included in the first color filter pattern is equal to the number of red color filters included in the second color filter pattern.

5. The imaging device according to claim 1, wherein: The number of green color filters included in the first color filter pattern is equal to the number of green color filters included in the second color filter pattern.

6. The imaging device according to claim 1, wherein: A plurality of first pixels of the pixel array corresponding to the first color filter pattern of the color filter array are arranged in a Bayer pattern, and a plurality of second pixels of the pixel array corresponding to the second color filter pattern of the color filter array are arranged in a Quaternion pattern.

7. The imaging device according to claim 1, wherein: The color filter array further includes: a third color filter pattern different from the first color filter pattern and the second color filter pattern, The third color filter pattern is located at the center of the color filter array, and the first color filter pattern surrounds the third color filter pattern.

8. The imaging device according to claim 7, wherein: A plurality of second pixels of the pixel array corresponding to the second color filter pattern of the color filter array are configured as a Bayer pattern, a plurality of first pixels of the pixel array corresponding to the first color filter pattern of the color filter array are configured as a quadruple pattern, and a plurality of third pixels of the pixel array corresponding to the third color filter pattern of the color filter array are configured as a nine-element pattern.

9. The imaging device according to claim 1, wherein: M is 4.

10. The imaging device according to claim 9, wherein: The first color filter pattern is a standard color filter array.

11. The imaging device according to claim 10, wherein: The standard color filter array has a Bayer pattern.

12. The imaging device according to claim 1, wherein: M is 6.

13. The imaging device according to claim 1, wherein: M is 8.

14. The imaging device according to claim 1, wherein: M is 2×N.

15. The imaging device according to claim 7, wherein: The third color filter pattern includes a plurality of different color filters, and the plurality of different color filters included in the third color filter pattern are arranged in a T×T array.

Images