Deposition mask, method for manufacturing display device using deposition mask, and display device
By using a specially designed deposition mask to form a common electrode in the display device, the integration problem of the input/output components and the display area is solved, efficient resolution and transparency consistency are achieved, and the overall performance of the display device is improved.
Patent Information
- Application Number
- CN202011102873.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2019-11-26
- Filing Date
- 2020-10-15
- Publication Date
- 2025-10-03
- Estimated Expiration
- 2040-10-15
AI Technical Summary
The existing technology has difficulty in effectively integrating input/output components and display areas in a display device, resulting in uneven resolution and component interference, which affects the display effect.
A deposition mask including a main frame, ribs and bridges is used to form a common electrode on a substrate through a single deposition process. The rib and bridge design ensures transparency in the input/output component area and resolution consistency in the display area. The thickness of the bridge is smaller than that of the ribs to avoid deposition defects.
This achieves efficient formation of a common electrode in an area containing input/output components, improves the overall resolution and transparency of the display device, and ensures the consistency of the display effect and the normal function of the components.
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Figure CN112864171B_ABST
Abstract
Description
[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0153544, filed on November 26, 2019, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field
[0002] One or more embodiments relate to a deposition mask, a method of manufacturing a display device using the deposition mask, and the display device. Background Art
[0003] Recently, the use of display devices has become diversified. As display devices have become thinner and lighter, their scope of use has gradually expanded.
[0004] Since display devices can be used in various ways, display apparatuses have been designed to have various shapes. In addition, the functions that can be combined with or associated with display apparatuses continue to increase.
[0005] It will be understood that this background technology section is intended, in part, to provide a useful background for understanding the technology. However, this background technology section may also include ideas, concepts, or realizations that were not already known or understood by those skilled in the relevant art before the respective effective filing dates of the subject matter disclosed herein. Summary of the Invention
[0006] One or more embodiments may include a deposition mask, a method of manufacturing a display device using the deposition mask, and a display device.
[0007] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the disclosed presented embodiments.
[0008] According to one or more embodiments, a deposition mask may include: a main frame defining a first opening; ribs extending away from one side of the main frame, the ribs being separated from each other and defining a second opening; and bridges connecting the ribs to each other across the second opening, wherein the bridges and the ribs may form a same top surface, and a thickness of each of the bridges may be less than a thickness of each of the ribs.
[0009] A cross-section of each bridge member may have an inverted triangular shape, the cross-section being perpendicular to a longitudinal direction of each bridge member.
[0010] A width of each bridge in a direction perpendicular to a longitudinal direction of each bridge may be smaller than a thickness of each bridge, and a difference between a thickness of each rib and a thickness of each bridge may be at least about 0.5 times the width of each bridge.
[0011] A region of the main frame adjacent to the second opening may have the same shape as that of the bridge.
[0012] According to one or more embodiments, a display device may include: a substrate; a first display area including first pixels arranged on the substrate; and a second display area including second pixels arranged on the substrate and having a resolution different from that of the first display area, wherein the first pixels and the second pixels may include a common electrode, and the common electrode may include: a main common electrode corresponding to the first display area; and extensions extending from the main common electrode to the second display area and separated from each other, and each of the extensions includes a first area located between the second pixels, the first area being thinner than the main common electrode.
[0013] The common electrode may further include a second region thinner than the main common electrode in a connection portion of the main common electrode and the extension portion.
[0014] The first region may intersect a corresponding extension portion among the extension portions.
[0015] A transmissive area may be defined between the extension portions in the second display area, and the common electrode may not be provided in the transmissive area.
[0016] The resolution of the second display area may be smaller than the resolution of the first display area.
[0017] The display device may further include a component for detecting an external signal, the component being disposed at a position overlapping the second display area.
[0018] Each of the first pixel and the second pixel may include: a thin film transistor; and an organic light emitting diode electrically connected to the thin film transistor, and a barrier layer may be further disposed between the thin film transistor and the substrate in the second display area.
[0019] A first buffer layer and a second buffer layer may be further disposed on the substrate, and a barrier layer may be disposed between the first buffer layer and the second buffer layer.
[0020] The active layer of the thin film transistor may include a silicon material, the first buffer layer may include silicon nitride, and the second buffer layer may include silicon oxide.
[0021] The display device may further include: a planarization layer located between the thin film transistor and the organic light emitting diode; and a pixel defining layer disposed on the planarization layer and covering an edge portion of the pixel electrode of the organic light emitting diode to define an emission area, wherein a portion of the planarization layer corresponding to a position overlapping with the transmission area and a portion of the pixel defining layer corresponding to a position overlapping with the transmission area may be removed.
[0022] The number of second pixels disposed in the second display area per unit area may be less than the number of first pixels disposed in the first display area per unit area.
[0023] According to one or more embodiments, a method of manufacturing a display device may include: attaching a substrate to a deposition mask; and forming a common electrode on the substrate through the deposition mask, wherein the deposition mask may include: a main frame defining a first opening; ribs protruding away from one side of the main frame, the ribs being separated from each other and defining a second opening; and bridges fixing the ribs to each other by connecting the ribs across the second opening, each of the bridges having a thickness smaller than a thickness of each of the ribs, the common electrode may include: a main common electrode deposited through the first opening; and an extension portion deposited through the second opening located between the ribs, and the extension portion may include a first region thinner than the thickness of the main common electrode in a position where the bridge may be provided.
[0024] A region of the main frame adjacent to the second opening may have the same shape as that of the bridge, a second region may be formed in a connection portion of the main common electrode and the extension portion, and the second region and the first region may have the same shape.
[0025] The ribs and bridges may form a common top surface.
[0026] The common electrode may not be formed in the transmissive region between the extension portions.
[0027] A component for sensing an external signal may be further provided at a position overlapping at least the transmission area. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] The above and other aspects, features and advantages of the disclosed embodiments will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
[0029] Figure 1 is a schematic perspective view of an example of a display device according to an embodiment;
[0030] Figure 2 It is along Figure 1 Schematic cross-sectional views of examples of cross sections of the display device taken along line AA′ and line BB′;
[0031] Figure 3 is used to show the manufacturing Figure 1 Schematic perspective view of some processes of the display device;
[0032] Figure 4 yes Figure 3 A schematic plan view of a portion of a deposition mask;
[0033] Figure 5Is manufacturing Figure 2 A schematic cross-sectional view of an example of a manufacturing device used during a process of manufacturing a display device;
[0034] Figure 6 It is along Figure 4 A schematic cross-sectional view of an example of a deposition mask taken along line II-II';
[0035] Figure 7 yes Figure 1 A schematic plan view of a display device;
[0036] Figure 8 yes Figure 7 A schematic plan view of a portion of a common electrode of a display device;
[0037] Figure 9 It is along Figure 8 A schematic cross-sectional view of an example of a display device taken along line IV-IV'; and
[0038] Figure 10 It is along Figure 4 Schematic cross-sectional view of an example of a deposition mask taken along line VI-VI'. DETAILED DESCRIPTION
[0039] Reference will now be made in detail to the embodiments, examples of which are shown in the accompanying drawings, wherein like reference numerals always represent like elements. In this regard, the embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Therefore, the embodiments will be described below solely with reference to the accompanying drawings to explain aspects of the specification. As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. The terms "and" and "or" may be used in conjunction with or in a separate sense and may be understood to be equivalent to "and / or". Throughout the disclosure, the expression "at least one of a, b, and c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.
[0040] It will be understood that although the terms "first," "second," etc. may be used herein to describe various components, these components should not be limited by these terms. These terms are only used to distinguish one component from another.
[0041] As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
[0042] It will also be understood that the terms “comprises” and / or “comprising” used herein specify the presence of stated features or components, but do not preclude the presence or addition of one or more other features or components.
[0043] It will be understood that when a layer, region, or component is referred to as being "formed on" another layer, region, or component, the layer, region, or component may be directly or indirectly formed on the other layer, region, or component. For example, intervening layers, regions, or components may be present.
[0044] For the convenience of explanation, the size of the elements in the drawings may be exaggerated or reduced. In other words, since the size and thickness of the components in the drawings are arbitrarily shown for the convenience of explanation, the following embodiments are not limited thereto.
[0045] When specific embodiments can be implemented differently, the specific process order can be performed in a different order than described. For example, two consecutively described processes can be performed substantially simultaneously or in a reverse order to the described order.
[0046] The term "overlying" may include layering, stacking, facing or facing, extending over, covering or partially covering or any other suitable term as would be appreciated and understood by one of ordinary skill in the art.
[0047] As used herein, "about" or "approximately" is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the measurements being discussed and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±5% of the stated value.
[0048] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will also be understood that, unless clearly defined otherwise in the specification, terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and will not be interpreted in an idealized or overly formal sense.
[0049] Figure 1 is a schematic perspective view of an example of a display device 1 according to the embodiment.
[0050] Reference Figure 1 , the display area DA of the display device 1 may include a first display area DA1 and a second display area DA2. The first display area DA1 may be a main display area that displays a main image by using light emitted from the first pixels Pm.
[0051] The second display area DA2 may be an area where an input / output component 300 (such as a sensor) that can use light or sound signals may be disposed (e.g., arranged) beneath the substrate 100. The input / output component 300 may transmit, receive, or both transmit and receive, for example, light and / or sound. A transmissive area TA may be disposed in the second display area DA2 so that the input / output component 300 can receive external light and / or sound signals, and such signals may be output from the input / output component 300 to the outside of the display device 1. Since the second pixels Pa may be disposed in the second display area DA2, the second display area DA2 may display an image using light emitted from the second pixels Pa. However, since the transmissive area TA may be disposed in the second display area DA2, the resolution of the image provided by the second display area DA2 may be lower than that of the image provided by the first display area DA1. For example, the number of second pixels Pa disposed in the second display area DA2 per unit area may be less than the number of first pixels Pm disposed in the first display area DA1 per unit area.
[0052] Hereinafter, although the display device 1 according to the embodiment may be described as an organic light-emitting display device as an example, the display device 1 according to the embodiment may be a display device of various types (such as an inorganic light-emitting display and a quantum dot light-emitting display) or may be applied to a display device of various types (such as an inorganic light-emitting display and a quantum dot light-emitting display). Similarly, the display device 1, the deposition mask, and the method of manufacturing the display device 1 may be applied to various technologies including as a phone, a head-up display, a television, an artificial intelligence device, etc.
[0053] Figure 2 It is along Figure 1 Schematic cross-sectional view of an example of a cross section of the display device 1 taken along line AA′ and line BB′.
[0054] like Figure 2 As shown in , the first pixel Pm and the second pixel Pa may include an organic light emitting diode OLED having a similar structure and a thin film transistor TFT having a similar structure. The difference between the first pixel Pm and the second pixel Pa may be the number of pixels per unit area in the first display area DA1 and the second display area DA2.
[0055] The display device 1 may include a substrate 100 and an input / output assembly 300. The substrate 100 may include a first display area DA1 and a second display area DA2, and the input / output assembly 300 may be disposed at a position overlapping the second display area DA2.
[0056] The input / output component 300 may include electronic components that can use light or sound. For example, the input / output component 300 may be a sensor such as an infrared sensor that emits and / or receives light, a sensor that outputs and senses light or sound to measure distance or recognize fingerprints, a small lamp that outputs light, a speaker that outputs sound, and / or an image collection device. Electronic components that use light can use light of various wavelengths such as visible light, infrared light, and ultraviolet light. The number of input / output components 300 set in the second display area DA2 can be set to multiple. For example, the light-emitting element and the light-receiving element as the input / output component 300 can be set together in the second display area DA2. As another example, the light-emitting element and the light-receiving element can be set simultaneously in a single input / output component 300.
[0057] The substrate 100 may include glass, a polymer resin, or a combination thereof. The polymer resin may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose acetate propionate, or a combination thereof. The substrate 100 including the polymer resin may be flexible, rollable, or bendable. The substrate 100 may have a multilayer structure including a layer containing a polymer resin and an inorganic layer (not shown).
[0058] The buffer layer 111 may be disposed on the substrate 100. The buffer layer 111 may reduce or block penetration of foreign matter, moisture, or external air from below the substrate 100 and provide a flat surface on the substrate 100.
[0059] The buffer layer 111 may include an inorganic material such as an oxide or a nitride, an organic material, or an organic / inorganic composite material, and may include a single layer or a multilayer including an inorganic material and an organic material. For example, the buffer layer 111 may have a structure in which a first buffer layer 111a and a second buffer layer 111b may be stacked. The first buffer layer 111a and the second buffer layer 111b may include different materials. For example, the first buffer layer 111a may include silicon nitride, for example, SiN x The second buffer layer 111b may include silicon oxide, for example, SiO x .
[0060] In the case where the first buffer layer 111a comprises silicon nitride, hydrogen may be included during the formation of the silicon nitride. This technique can improve the carrier mobility of the active layer 1130 formed on the buffer layer 111, and can improve the electrical characteristics of the thin film transistor (TFT). The active layer 1130 may comprise a silicon material. The interface bonding characteristics between the active layer 1130 comprising silicon and the second buffer layer 111b comprising silicon oxide can be improved, thereby improving the electrical characteristics of the thin film transistor (TFT).
[0061] A thin film transistor TFT may be provided on the buffer layer 111, and the thin film transistor TFT includes an active layer 1130, a gate electrode G, a source electrode S, and a drain electrode D. Hereinafter, although a top-gate thin film transistor TFT in which the gate electrode G is provided above the active layer 1130 may be described, the thin film transistor TFT may be a bottom-gate thin film transistor TFT in which the gate electrode G may be provided below the active layer 1130.
[0062] The active layer 1130 on the buffer layer 111 may include, for example, polycrystalline silicon. The active layer 1130 may include a channel region, a source region, and a drain region, wherein the channel region overlaps the gate electrode G. The source region and the drain region may be arranged on two opposite sides of the channel region and be doped with impurities at a higher concentration than that of the channel region. Here, the impurities may include N-type impurities or P-type impurities. In another embodiment, the active layer 1130 may include amorphous silicon or an organic semiconductor material. In another embodiment, the active layer 1130 may include an oxide semiconductor.
[0063] The gate electrode G may be disposed on the active layer 1130 with the first gate insulating layer 112 therebetween. The gate electrode G may include at least one of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), and may include a single layer or multiple layers.
[0064] The first gate insulating layer 112 may include silicon oxide (SiO2), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) and zinc oxide (ZnO2) at least one.
[0065] The second gate insulating layer 113 may cover the gate electrode G. The second gate insulating layer 113 may include silicon oxide (SiO2), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) and zinc oxide (ZnO2) at least one.
[0066] The source electrode S and the drain electrode D may be disposed on the interlayer insulating layer 115. The source electrode S and the drain electrode D may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or a combination thereof, and may include a single layer or multiple layers including the above materials.
[0067] A planarization layer 117 may be provided on the source electrode S and the drain electrode D. An organic light emitting diode OLED may be provided on the planarization layer 117. The organic light emitting diode OLED may be electrically connected to the thin film transistor TFT. For example, the organic light emitting diode OLED may be electrically connected to the drain electrode D.
[0068] The planarization layer 117 may have a flat top surface so that the pixel electrode 210 may be formed to be flat. The planarization layer 117 may include a single layer or multiple layers containing an organic material. The planarization layer 117 may include a general polymer (such as benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethyl methacrylate (PMMA) or polystyrene (PS)), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aromatic ether polymer, an amide polymer, a fluorine polymer, a paraxylene polymer, a vinyl alcohol polymer or a blend thereof. The planarization layer 117 may include an inorganic material. The planarization layer 117 may include silicon oxide (SiO2), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), and zinc oxide (ZnO2). In the case where the planarization layer 117 includes an inorganic material, chemical mechanical polishing may be performed according to circumstances. The planarization layer 117 may include both organic and inorganic materials.
[0069] The pixel electrode 210 may include a (semi) transparent electrode or a reflective electrode. In an embodiment, the pixel electrode 210 may include a reflective layer and a transparent electrode layer or a semi-transparent electrode layer on the reflective layer, and the reflective layer includes silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or a mixture thereof. The transparent electrode layer or the semi-transparent electrode layer may include at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) and aluminum zinc oxide (AZO). In an embodiment, the pixel electrode 210 may have a stacked structure of ITO / Ag / ITO.
[0070] A pixel-defining layer 119 may be provided on the planarization layer 117. The pixel-defining layer 119 may define an emission region by including openings corresponding to pixels (i.e., openings exposing at least a central portion of the pixel electrode 210). The pixel-defining layer 119 may prevent arcing, etc., between the edges of the pixel electrode 210 and the common electrode 230 by increasing the distance between the edges of the pixel electrode 210 and the common electrode 230. The pixel-defining layer 119 may include, for example, an organic material such as polyimide or HMDSO.
[0071] The intermediate layer 220 may include a low molecular weight material or a polymer material. In the case where the intermediate layer 220 includes a low molecular weight material, the intermediate layer 220 may have a structure in which the HIL, HTL, emission layer (EML), ETL, EIL, etc. can be stacked in a single or composite configuration. The intermediate layer 220 may include various organic materials such as copper phthalocyanine (CuPc), N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq3), or mixtures thereof. These layers may be formed by vacuum deposition.
[0072] In the case where the intermediate layer 220 includes a polymer material, the intermediate layer 220 may have a structure including an HTL and an EML. The HTL may include poly-3,4-ethylenedioxythiophene (PEDOT), and the EML may include a polymer material such as a polyphenylene vinylene (PPV)-based material or a polyfluorene-based material. The structure of the intermediate layer 220 is not limited to the above description and may have various structures. For example, at least one of the layers constituting the intermediate layer 220 may be formed as one body above the pixel electrode 210. As another example, the intermediate layer 220 may include a layer patterned to correspond to each of the pixel electrodes 210.
[0073] The common electrode 230 may include a transparent electrode or a reflective electrode. In embodiments, the common electrode 230 may include a transparent electrode or a semi-transparent electrode and may include a thin metal layer having a low work function and including at least one of lithium (Li), calcium (Ca), lithium fluoride (LiF) / Ca, LiF / aluminum (Al), Al, silver (Ag), magnesium (Mg), and mixtures thereof. The common electrode 230 may be disposed above the first display area DA1 and the second display area DA2 and on the intermediate layer 220 and the pixel defining layer 119.
[0074] The transmissive area TA of the second display area DA2 may be a region through which light signals and / or sound signals emitted from the input / output assembly 300 pass. For accurate signal transmission, the common electrode 230 may not be formed in the transmissive area TA. Experimental results indicate that the transmittance of the common electrode 230 not formed in the transmissive area TA is approximately 1.5 times greater than the transmittance of the common electrode 230 formed in the transmissive area TA. The following describes a process for manufacturing the common electrode 230 having this characteristic structure. Furthermore, to improve the transmittance of the transmissive area TA, the planarization layer 117 and the pixel defining layer 119 may be removed from the transmissive area TA.
[0075] A blocking layer BSM may be provided between the substrate 100 and the thin film transistor TFT in a position overlapping the second pixel Pa in the second display area DA2. The blocking layer BSM blocks the thin film transistor TFT so that the thin film transistor TFT is not affected by light signals or sound signals from the adjacent input / output assembly 300. For example, the blocking layer BSM may be provided between the first buffer layer 111a and the second buffer layer 111b.
[0076] Although not shown, a thin film encapsulation layer may be formed on the common electrode 230, and the thin film encapsulation layer includes at least one inorganic encapsulation layer and at least one organic encapsulation layer that may be stacked. The inorganic encapsulation layer may include at least one inorganic insulating material selected from the group consisting of aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyacrylate, HMDSO, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), or a combination thereof.
[0077] Figure 3 It is manufactured Figure 1 Schematic perspective view of some processes of the display device 1. Figure 4 yes Figure 3 Schematic plan view of a portion of a deposition mask. Figure 5 Is manufacturing Figure 2 Schematic cross-sectional view of an example of a manufacturing device used during the process of display device 1. Figure 6 It is along Figure 4 Schematic cross-sectional view of an example of a deposition mask taken along line II-II'.
[0078] Figure 3 The common electrode 230 is formed on the substrate 100 (see FIG. Figure 7 Specifically, the deposition mask 10 can be closely attached to the substrate 100, and the common electrode 230 can be deposited on the substrate 100 by the deposition mask 10 (see Figure 7 The common electrode 230 may be formed on the first display area DA1 and the second display area DA2 by a single deposition process (see FIG. Figure 7 For this purpose, the deposition mask 10 may include a first opening 12 and a rib 13 , the first opening 12 corresponding to the first display area DA1 .
[0079] The first opening 12 may be defined by the main frame 11 of the deposition mask 10. The rib 13 may protrude outward from one side of the main frame 11 in a plan view to correspond to the second display area DA2. For example, the rib 13 may protrude away from the main frame 11 from one side of the main frame 11.
[0080] The ribs 13 can be separated from each other and as Figure 4 As shown in FIG, the second opening 15 may be defined between the ribs 13. Since the ribs 13 may be provided so as to be aligned with the transmissive area TA (see FIG. Figure 7 ) corresponds to, therefore, it is not necessary to Figure 7 ) is deposited in the common electrode 230 (see Figure 7 ).
[0081] On the contrary, the second opening 15 may be formed in a position overlapping the second pixel Pa. With this configuration, the common electrode 230 may be deposited at a position corresponding to the second pixel Pa (see FIG. 2 ). Figure 7 ). The width of the second opening 15 may be greater than the width of the second pixel Pa. As a result, the common electrode 230 (see FIG. 230 ) deposited through the second opening 15 Figure 7 ) may cover the second pixel Pa. Here, the width of the second pixel Pa may represent the width of the pixel defining layer 119 (see Figure 2 ) defines the width of the opening of the emission region. Therefore, even when the common electrode 230 (see Figure 7 ) process, a slight alignment error may occur between the deposition mask 10 and the substrate 100, which can also prevent the common electrode 230 (see Figure 7 ) formation defects occur.
[0082] The ribs 13 may be connected to each other by the bridge 14. For example, the bridge 14 may cross the second opening 15 and be provided between the formation areas of the second pixel Pa. Here, in the case where the bridge 14 may be referred to as crossing the second opening 15, the bridge 14 may not only cross the second opening 15 at the shortest distance, but also Figure 4 The bridge 14 can obliquely cross the second opening 15 in a straight line shape according to the position of the second pixel Pa. The bridge 14 can allow the common electrode 230 (see FIG. 1 ) to be fixed by fixing the position of the rib 13 extending from the main frame 11. Figure 7 ) is formed at an accurate position in the second display area DA2.
[0083] You can use Figure 5 The manufacturing apparatus 400 shown in FIG. 1 is used to perform deposition of the common electrode 230 by using the deposition mask 10 (see FIG. Figure 7 The manufacturing apparatus 400 may include a chamber 410, a mask assembly 420, a first support 430, a second support 440, a deposition source 450, a magnetic force generator 460, a vision component 470, and a pressure regulator 480.
[0084] The chamber 410 may include a space therein, and a portion of the chamber 410 may be open. A gate valve 411 may be provided in the open portion of the chamber 410 so that the gate valve 411 can be opened / closed. A pressure regulator 480 may be connected to the chamber 410 to regulate the pressure inside the chamber 410. The pressure regulator 480 may include a connecting pipe 481 connected to the chamber 410 and a pump 482 provided at the connecting pipe 481.
[0085] The mask assembly 420 may include a mask sheet 422 and a mask frame 421 coupled to the mask sheet 422. The mask sheet 422 may include the deposition mask 10 described above. For example, the mask sheet 422 may include a plurality of deposition masks 10. The mask sheet 422 may be fixed to the mask frame 421 with tension applied thereto.
[0086] The substrate 100 can be stably placed on the first support 430. The first support 430 can adjust the position of the substrate 100. For example, the first support 430 can include a UVW platform. The mask assembly 420 can be stably placed on the second support 440. Similar to the first support 430, the second support 440 can adjust the position of the mask assembly 420.
[0087] The deposition source 450 may contain a deposition material and evaporate or sublime the deposition material to supply the deposition material to the chamber 410. The deposition source 450 may include a heater therein and melt or sublime the deposition material by heating the deposition material inside the deposition source 450 through operation of the heater.
[0088] The vision part 470 may be provided on the chamber 410 and may photograph the positions of the mask assembly 420 and the substrate 100. The vision part 470 may photograph an alignment mark of at least one of the mask assembly 420 and the substrate 100.
[0089] The magnetic force generator 460 may be provided in the chamber 410 and may tightly adhere the substrate 100 to the mask assembly 420. The magnetic force generator 460 may include an electromagnet or a permanent magnet that generates magnetic force. As described above, since the deposition mask 10 may include the bridge 14 that may fix the position of the rib 13 extending from the main frame 11, the deposition mask 10 may prevent the position of the rib 13 from being distorted while the substrate 100 may be tightly attached to the mask assembly 420. As a result, the common electrode 230 may be deposited at an accurate position in the second display area DA2 (see FIG. 2 ). Figure 7 ).
[0090] The common electrode 230 in the second display area DA2 may be deposited through the second openings 15 between the ribs 13 (see FIG. Figure 7 ). The bridge 14 may be arranged to cross the second opening 15. However, it may be required that the common electrode 230 be deposited through the second opening 15 (see Figure 7 ) will not be disconnected by the bridge member 14. For this purpose, Figure 6 As shown in , the bridge 14 and the rib 13 may form the same top surface, and the thickness of the bridge 14 may be smaller than that of the rib 13. For example, since the bottom surface of the bridge 14 may be separated from the deposition surface on which the common electrode 230 may be deposited, the common electrode 230 may also be deposited below the bridge 14, and the common electrode 230 (see Figure 7 ) may be continuously formed in the second display area DA2 without being disconnected by the bridge 14.
[0091] Since the ribs 13 have a shape protruding from the main frame 11 of the deposition mask 10, the common electrode 230 (see FIG. Figure 7 ) is disconnected in the first display area DA1 and the second display area DA2 by the main frame 11. To this end, the region P of the main frame 11 adjacent to the second opening 15 may have the same shape as that of the bridge 14. For example, the portion of the main frame 11 corresponding to the region P may have a thickness smaller than that of the surroundings, and the deposition mask 10 may be formed along the Figure 4 The cross section of the deposition mask 10 is taken along the line II-II'. Figure 4 The cross section taken along line III-III' may have the same Figure 6 As a result, when the common electrode 230 is deposited by using the deposition mask 10 (see Figure 7 ) can prevent the common electrode 230 (see Figure 7 ) is separated in the first display area DA1 and the second display area DA2.
[0092] Figure 7 yes Figure 1 Schematic plan view of the display device 1. Figure 8 yes Figure 7 Schematic plan view of a portion of a common electrode 230 of the display device 1. Figure 9 It is along Figure 8 Schematic cross-sectional view of an example of the display device 1 taken along line IV-IV′.
[0093] First, if Figure 7 As shown in FIG, the display area DA may include a first display area DA1 and a second display area DA2 having different resolutions. The common electrode 230 may include a main common electrode 230a and an extension portion 230b, the main common electrode 230a being disposed in the first display area DA1 and the extension portion 230b being disposed in the second display area DA2.
[0094] The common electrode 230 can be formed by using the deposition mask 10 described above (see Figure 3 ) is formed by a single deposition process. Thus, the main common electrode 230a and the extension portion 230b can be formed as one body. Therefore, the first pixel Pm and the second pixel Pa may include the common electrode 230 provided as one body.
[0095] The first pixels Pm may be densely disposed in the first display area DA1 , and the main common electrode 230 a may be formed as one body to correspond to the first pixels Pm.
[0096] Since the second pixels Pa may be less densely disposed in the second display area DA2 than the first pixels Pm, the resolution of the second display area DA2 may be smaller than that of the first display area DA1. The extension portions 230b may protrude from the main common electrode 230a and correspond to the second pixels Pa, respectively.
[0097] Although Figure 7 , the extension portion 230 b may have a zigzag shape, but the shape of the extension portion 230 b may be variously changed according to the arrangement of the second pixels Pa. For example, the extension portion 230 b may be formed long in a straight line or obliquely according to the arrangement of the second pixels Pa. The extension portions 230 b may be separated from each other in a direction perpendicular to the extension direction to form the transmission area TA.
[0098] The extension portions 230b may cover the second pixels Pa, respectively, and the width of the extension portions 230b may be greater than the width of the second pixels Pa. Here, the width of the second pixel Pa may represent the width of the pixel defining layer 119 (see FIG. Figure 2) defines the width of the opening of the emission area. The extension portion 230b may include a first region G between the second pixels Pa, the first region G being thinner than the thickness of the main common electrode 230a. The first region G may have a concave shape having a top surface that may be lower than the surrounding top surface. The first region G may be formed on a portion of the substrate where the bridge member 14 described above may be provided (see FIG. Figure 4 ) and may have a bridging member 14 (see Figure 4 For example, the first region G may cross the extension portion 230b.
[0099] As described above, due to the main frame 11 and the second opening 15 (see Figure 4 ) adjacent to the region P may have a bridging member 14 (see Figure 4 ), the common electrode 230 may further include a second region Q having a height smaller than that of the common electrode 230 adjacent thereto, the second region Q being at the connection portion of the main common electrode 230a and the extension portion 230b. For example, along Figure 8 The cross-section of the display device 1 taken along line IV-IV' and line V-V' may have the same Figure 9 Same shape as shown in .
[0100] Figure 10 It is along Figure 4 Schematic cross-sectional view of an example of the deposition mask 10 taken along line VI-VI′.
[0101] Figure 10 1 shows a cross-sectional shape perpendicular to the longitudinal direction of the bridge member 14. As described above, since the bottom surface of the bridge member 14 can be separated from the deposition surface, the common electrode 230 (see FIG. Figure 7 ) can be deposited under the bridge 14. Figure 7 ), the deposition material may be incident at an angle. To improve the deposition efficiency of the portion below the bridge 14, the bridge 14 may have an inverted triangle shape in its vertical cross-section. However, the disclosure is not limited thereto, and the bridge 14 may have various shapes.
[0102] In order to improve the deposition of the common electrode 230 below the bridge 14 (see Figure 2 ), the thickness T2 of the bridge 14 may be greater than the width W of the bridge 14 , and the difference between the thickness T1 of the rib 13 and the thickness T2 of the bridge 14 may be at least about 0.5 times the width W of the bridge 14 .
[0103] According to the embodiment, since an image can be displayed even in an area where input / output components can be provided, a display device in which the display area can be expanded can be realized. The common electrode can be formed in the entire area including the main display area and the area where input / output components can be provided through a single deposition process.
[0104] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. The description of features or aspects within each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope defined by the claims (including their equivalents).
Claims
1. A deposition mask, comprising: a main frame defining a first opening; ribs extending away from one side of the main frame, the ribs being spaced apart from each other and defining a second opening; as well as A bridge member spanning the second opening connects the ribs to each other, wherein The bridge and the rib form a common top surface, The thickness of each of the bridges is smaller than the thickness of each of the ribs, and A region of the main frame adjacent to the second opening has the same shape as that of the bridge.
2. The deposition mask according to claim 1, wherein A cross section of each bridge member has an inverted triangular shape, the cross section being perpendicular to a longitudinal direction of each bridge member.
3. The deposition mask according to claim 1, wherein The width of each bridge member in a direction perpendicular to the longitudinal direction of each bridge member is smaller than the thickness of each bridge member, and The difference between the thickness of each rib and the thickness of each bridge is at least 0.5 times the width of each bridge.
4. A display device, comprising: substrate; A first display area includes a first pixel disposed on the substrate; as well as a second display area including second pixels disposed on the substrate and having a resolution different from that of the first display area, wherein: The first pixel and the second pixel include a common electrode, The common electrode includes: a main common electrode corresponding to the first display area; and an extension portion extending from the main common electrode to the second display area and separated from each other. Each of the extending portions includes a first region located between the second pixels, the first region being thinner than the main common electrode, and The common electrode is formed through a single deposition process using one deposition mask.
5. The display device according to claim 4, wherein The common electrode further includes a second region thinner than the main common electrode in a connection portion of the main common electrode and the extension portion. The display device according to claim 4 , wherein: The first region intersects a corresponding extending portion among the extending portions.
7. The display device according to claim 4, wherein A transmissive area is defined between the extending portions in the second display area, and The common electrode is not disposed in the transmissive region.
8. The display device according to claim 7, wherein: The resolution of the second display area is smaller than that of the first display area. 9 . The display device according to claim 7 , further comprising a component for detecting an external signal, the component being disposed at a position overlapping the second display area.
10. The display device according to claim 9, wherein Each of the first pixel and the second pixel includes: thin film transistors; and an organic light emitting diode electrically connected to the thin film transistor, and A barrier layer is further disposed between the thin film transistor and the substrate in the second display area.
11. The display device according to claim 10, further comprising a first buffer layer and a second buffer layer disposed on the substrate. in, The barrier layer is disposed between the first buffer layer and the second buffer layer.
12. The display device according to claim 11, wherein The active layer of the thin film transistor comprises silicon material, The first buffer layer includes silicon nitride, and The second buffer layer includes silicon oxide.
13. The display device according to claim 10, further comprising: a planarization layer, located between the thin film transistor and the organic light emitting diode; as well as a pixel defining layer, disposed on the planarization layer and covering an edge portion of the pixel electrode of the organic light emitting diode to define an emission area, A portion of the planarization layer corresponding to a position overlapping the transmission area and a portion of the pixel defining layer corresponding to a position overlapping the transmission area are removed.
14. The display device according to claim 4, wherein The number of second pixels provided in the second display area per unit area is smaller than the number of first pixels provided in the first display area per unit area.
15. A method for manufacturing a display device, the method comprising: attaching the substrate to a deposition mask; as well as forming a common electrode on the substrate through the deposition mask, The deposition mask includes: a main frame defining a first opening; ribs protruding away from one side of the main frame, the ribs being separated from each other and defining a second opening; and bridges fixing the ribs to each other by connecting the ribs across the second opening, each of the bridges having a thickness smaller than that of each of the ribs. The common electrode includes: a main common electrode deposited through the first opening; and an extension portion deposited through the second opening located between the ribs, and The extending portion includes a first region thinner than a thickness of the main common electrode at a position where the bridge is provided.
16. The method according to claim 15, wherein An area of the main frame adjacent to the second opening has the same shape as that of the bridge member, forming a second region in a connection portion of the main common electrode and the extension portion, and The second region and the first region have the same shape.
17. The method according to claim 15, wherein: The ribs and the bridges form a common top surface.
18. The method according to claim 15, wherein The common electrode is not formed in the transmissive region between the extension portions.
19. The method according to claim 18, wherein A component for sensing an external signal is further provided at a position overlapping at least the transmission area.
Citation Information
Patent Citations
Mask plate assembly, OLED display panels, manufacturing method of OLED display panels, and display device
CN109957754A
Organic light-emitting display panel, manufacturing method thereof, display device and mask
CN110265461A
Method of manufacturing mask, buffer substrate for supporting mask, and method of manufacturing same
CN110318019A
Mask for deposition, method of manufacturing mask, and method of manufacturing display device
US20180151803A1
Deposition mask assembly for display devices
US20180198067A1