Organic light-emitting display device

Abstract

An organic light-emitting display device may include: a lower substrate including a display area and a peripheral area, having a first inclined surface at an outer contour portion of the peripheral area; a pixel structure disposed on the display area of the lower substrate; an upper substrate disposed on the pixel structure; a pad electrode disposed on the lower substrate in the peripheral area between the lower substrate and the upper substrate and extending up to the first inclined surface; and a side electrode disposed on a side surface of the lower substrate and the upper substrate and in contact with the pad electrode. Accordingly, the contact resistance between the pad electrode and the side electrode can be reduced.

Description

Technical Field

[0001] The present invention relates to an organic light emitting display device and a method of manufacturing the same. More specifically, the present invention relates to an organic light emitting display device including a side electrode and a method of manufacturing the same including a side electrode. Background Art

[0002] Flat panel display devices are used as display devices in place of cathode ray tube display devices due to characteristics such as light weight and thinness. As a representative example of such flat panel display devices, there are liquid crystal display devices and organic light emitting display devices.

[0003] An organic light emitting display device may include an upper substrate and a lower substrate, and a plurality of pad electrodes connected to an external device may be disposed on the lower substrate. Here, the external device may generate a plurality of signals, and the plurality of signals may be provided to the organic light emitting display device through the plurality of pad electrodes. In order for the plurality of pad electrodes to be in direct contact with the external device, the length of the lower substrate may be greater than the length of the upper substrate. In other words, the lower substrate may protrude more than the upper substrate in one direction, and the plurality of pad electrodes may be disposed in the protruding portion (for example, a pad region) of the lower substrate. That is, due to the pad region of the lower substrate, the organic light emitting display device has a relatively large non-light emitting region (for example, an inactive space). In order to reduce the inactive space of the organic light emitting display device, an organic light emitting display device is being developed in which the protruding portion of the lower substrate is removed so that only the sides of the respective pad electrodes are exposed to the outside. However, as only the sides of the respective pad electrodes are exposed to the outside, the exposed area of each of the plurality of pad electrodes is relatively reduced, and there is a problem in that the resistance of the plurality of pad electrodes increases. Summary of the Invention

[0004] An object of the present invention is to provide an organic light emitting display device including a side electrode.

[0005] Another object of the present invention is to provide a method of manufacturing an organic light emitting display device including a side electrode.

[0006] However, the present invention is not limited to the above objects, and various extensions may be made without departing from the spirit and scope of the present invention.

[0007] To achieve the aforementioned object of the present invention, an organic light-emitting display device according to each exemplary embodiment of the present invention may include: a lower substrate including a display region and a peripheral region, having a first inclined surface at an outer contour portion of the peripheral region; a pixel structure disposed on the display region of the lower substrate; an upper substrate disposed on the pixel structure; a pad electrode disposed on the lower substrate in the peripheral region between the lower substrate and the upper substrate and extending up to the first inclined surface; and a side electrode disposed on one side surface of the lower substrate and the upper substrate and in contact with the pad electrode.

[0008] In each exemplary embodiment, it may be that the side electrode overlaps with the first inclined surface of the lower substrate.

[0009] In each exemplary embodiment, it may be that the size of the lower substrate and the size of the upper substrate are the same, and the lower substrate and the upper substrate are provided to overlap each other.

[0010] In each exemplary embodiment, it may be that the pad electrode extends along a direction from the peripheral region toward the display region on the first inclined surface of the lower substrate and is electrically connected to the pixel structure.

[0011] In each exemplary embodiment, it may be that the organic light-emitting display device further includes: a sealing member disposed in the peripheral region between the lower substrate and the upper substrate.

[0012] In each exemplary embodiment, it may be that the sealing member covers a part of the pad electrode.

[0013] In each exemplary embodiment, it may be that the sealing member does not overlap with the first inclined surface of the lower substrate.

[0014] In each exemplary embodiment, it may be that the sealing member and the side electrode are in contact.

[0015] In each exemplary embodiment, it may be that in the peripheral region, the side electrode is disposed in a space defined by the upper substrate, the sealing member, and the pad electrode.

[0016] In each exemplary embodiment, it may be that the upper substrate has a second inclined surface formed to face the first inclined surface.

[0017] In each exemplary embodiment, it may be that the side electrode overlaps with the second inclined surface of the upper substrate.

[0018] To achieve the other objects of the present invention described above, a method of manufacturing an organic light emitting display device according to each exemplary embodiment of the present invention may include: providing a lower substrate including a display area, a peripheral area, and a dummy area; forming a groove in a first portion of the lower substrate overlapping with the peripheral area and the dummy area; forming a pad electrode on the lower substrate so as to overlap with the groove located in the peripheral area; forming a pixel structure in the display area on the lower substrate; removing the dummy area of the lower substrate and forming an inclined surface in the peripheral area of the lower substrate; and forming a side electrode in contact with the pad electrode.

[0019] In each exemplary embodiment, the method of manufacturing the organic light emitting display device may further include: forming a sealing member on the lower substrate so as to overlap with the peripheral area; forming an upper substrate on the pixel structure and the sealing member; and bonding the upper substrate having the sealing member formed thereon and the lower substrate.

[0020] In each exemplary embodiment, the side electrode may be in contact with the upper substrate, the lower substrate, the pad electrode, and the sealing member.

[0021] In each exemplary embodiment, the pad electrode may extend along a direction from the peripheral area toward the display area on the inclined surface of the lower substrate, and the sealing member covers at least a part of the pad electrode.

[0022] In each exemplary embodiment, after removing the dummy area of the lower substrate, the size of the lower substrate may be the same as the size of the upper substrate, and the upper substrate and the lower substrate may be arranged to overlap each other.

[0023] In each exemplary embodiment, in the peripheral area, the side electrode may be formed in a space defined by the upper substrate, the sealing member, and the pad electrode.

[0024] In each exemplary embodiment, the sealing member may not overlap with the inclined surface of the lower substrate.

[0025] In each exemplary embodiment, it may be that the method of manufacturing an organic light-emitting display device further includes: a step of forming a semiconductor element in a display area between the lower substrate and the pixel structure, and the step of forming the semiconductor element includes: a step of forming an active layer on the lower substrate; a step of forming a gate insulating layer on the active layer; a step of forming a gate electrode on the gate insulating layer; a step of forming an interlayer insulating layer on the gate electrode; and a step of forming a source electrode and a drain electrode on the interlayer insulating layer.

[0026] In each exemplary embodiment, it may be that the same material is used to simultaneously form the pad electrode, the source electrode, and the drain electrode.

[0027] (Advantages of the Invention)

[0028] The organic light-emitting display device according to each exemplary embodiment of the present invention includes a lower substrate having an inclined surface, so that the contact area between the pad electrode and the side electrode can be relatively increased, thereby reducing the contact resistance between the pad electrode and the side electrode.

[0029] In addition, by not removing a part of the upper substrate and a part of the sealing member located in the peripheral area, the side electrode can be arranged along the contour of the space. Thus, when a flexible circuit board is arranged on the side electrode for the organic light-emitting display device to be electrically connected to an external device, the contact area between the flexible circuit board and the side electrode can be increased to improve the bonding property between the flexible circuit board and the side electrode.

[0030] In the method of manufacturing an organic light-emitting display device according to each exemplary embodiment of the present invention, a groove is formed in the lower substrate by using a laser, and the lower substrate located in the dummy area is removed, so that an inclined surface can be easily formed on the lower substrate.

[0031] However, the effects of the present invention are not limited to the above effects, and various extensions can be made without departing from the spirit and scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a plan view showing an organic light-emitting display device according to each exemplary embodiment of the present invention.

[0033] Figure 2 is for explaining the Figure 1 block diagram of an external device electrically connected to the organic light-emitting display device.

[0034] Figure 3 is for explaining the Figure 1 explanatory circuit diagram of an organic light-emitting diode and a transistor included in the organic light-emitting display device.

[0035] Figure 4 is a cross-sectional view taken along line I-I' of Figure 1 .

[0036] Figures 5 to 10 is a cross-sectional view showing a method of manufacturing an organic light emitting display device according to exemplary embodiments of the present invention.

[0037] Figure 11 is a cross-sectional view showing an organic light emitting display device according to exemplary embodiments of the present invention.

[0038] (Reference Signs)

[0039] 10: Display area; 20: Peripheral area; 30: Pixel area; 50: dummy area; 100, 500: Organic light emitting display device; 101: External device; 110: Lower substrate; 130: Active layer; 150: Gate insulating layer; 170: Gate electrode; 190: Interlayer insulating layer; 200: Pixel structure; 210: Source electrode; 230: Drain electrode; 250: Semiconductor element; 270: Planarization layer; 290: Lower electrode; 310: Pixel defining film; 330: Light emitting layer; 340: Upper electrode; 390: Sealing member; 391: Space; 410: Upper substrate; 430: Pad electrode; 470: Side electrode; E1: Inclined surface; E2: Second inclined surface. DETAILED DESCRIPTION

[0040] Hereinafter, with reference to the accompanying drawings, an organic light emitting display device and a method of manufacturing the organic light emitting display device according to exemplary embodiments of the present invention will be described in detail. In the drawings, the same or similar reference numerals are used for the same or similar components.

[0041] Figure 1 is a plan view showing an organic light emitting display device according to exemplary embodiments of the present invention, Figure 2 is for explaining Figure 1 a block diagram of an external device electrically connected to the organic light emitting display device of

[0042] Referring to Figure 1 and Figure 2 , the organic light emitting display device 100 may include a plurality of pad electrodes 430, a plurality of side electrodes 470, etc., and may have a display area 10 and a peripheral area 20. Here, the peripheral area 20 may substantially surround the display area 10.

[0043] The display area 10 may include a plurality of pixel areas 30. The plurality of pixel areas 30 are arranged in a matrix form throughout the display area 10. For example, in each of the plurality of pixel areas 30, a pixel circuit (PIXELCIRCUIT) PC as shown in Figure 3 may be disposed (for example,Figure 4 As shown in the semiconductor element 250), an organic light-emitting diode OLED (for example, Figure 4 the pixel structure 200) shown) can be arranged on the pixel circuit PC. An image can be displayed in the display area 10 through the pixel circuit PC and the organic light-emitting diode OLED.

[0044] For example, in each pixel area 30, a first pixel circuit, a second pixel circuit, and a third pixel circuit can be arranged. The first pixel circuit can be connected to a first organic light-emitting diode capable of emitting red light, the second pixel circuit can be connected to a second organic light-emitting diode capable of emitting green light, and the third pixel circuit can be connected to a third organic light-emitting diode capable of emitting blue light.

[0045] The first organic light-emitting diode can be arranged overlapping the first pixel circuit, the second organic light-emitting diode can be arranged overlapping the second pixel circuit, and the third organic light-emitting diode can be arranged overlapping the third pixel circuit. Optionally, it can also be that the first organic light-emitting diode is arranged overlapping a part of the first pixel circuit and a part of a pixel circuit different from the first pixel circuit, the second organic light-emitting diode is arranged overlapping a part of the second pixel circuit and a part of a pixel circuit different from the second pixel circuit, and the third organic light-emitting diode is arranged overlapping a part of the third pixel circuit and a part of a pixel circuit different from the third pixel circuit. For example, for the first organic light-emitting diode to the third organic light-emitting diode, an RGB stripe (RGB stripe) method in which rectangles of the same size are arranged in sequence, an S-stripe (s-stripe) method including a blue organic light-emitting diode with a relatively wide area, a WRGB method further including a white organic light-emitting diode, a PenTile method arranged in a repeating pattern of RG-GB, etc. can be used for arrangement.

[0046] In addition, in each of the plurality of pixel areas 30, at least one driving transistor, at least one switching transistor, at least one capacitor, etc. can be arranged. In each exemplary embodiment, in each of the plurality of pixel areas 30, one driving transistor (for example, Figure 3 the first transistor TR1) and six switching transistors (for example, Figure 3 the second transistor TR2 to the seventh transistor TR7) and one energy storage capacitor (for example, Figure 3 the energy storage capacitor CST) etc. can be arranged.

[0047] Although it has been described that the shapes of the display region 10, the pixel region 30, and the peripheral region 20 of the present invention each have a square planar shape, the described shapes are not limited thereto. For example, the shapes of the display region 10, the pixel region 30, and the peripheral region 20 may each have a triangular planar shape, a rhombic planar shape, a polygonal planar shape, a circular planar shape, an orbital planar shape, or an elliptical planar shape.

[0048] A plurality of wirings may be disposed in the peripheral region 20. For example, the plurality of wirings may include data signal wirings, gate signal wirings, light emission control signal wirings, gate initialization signal wirings, initialization voltage wirings, power supply voltage wirings, etc. The plurality of wirings may extend from the peripheral region 20 to the display region 10 and be electrically connected to the pixel circuit PC and the organic light emitting diode OLED.

[0049] A plurality of pad electrodes 430 may be disposed on one side of the peripheral region 20 (for example, the right side of the display region 10), and a plurality of side electrodes 470 may be disposed on the sides of the lower substrate and the upper substrate, which will be described below, and a part of the plurality of pad electrodes 430.

[0050] The plurality of pad electrodes 430 may be interposed between the lower substrate and the upper substrate, and a part of each of the plurality of pad electrodes 430 may be exposed (see Figure 10 ). In addition, the plurality of pad electrodes 430 may each extend in a direction from the peripheral region 20 toward the display region 10 and may be electrically connected to the plurality of pixel structures 200. In other words, the pad electrode 430 may be connected to the plurality of wirings disposed in the display region 10.

[0051] In addition, the plurality of side electrodes 470 may each be in direct contact with the respective part of the plurality of pad electrodes 430. In other words, the plurality of side electrodes 470 may each be completely covered so that the respective part of the plurality of pad electrodes 430 is not exposed, and may be disposed on the one side surface of the lower substrate and the upper substrate.

[0052] For example, the plurality of pad electrodes 430 may include a first pad electrode to an nth pad electrode (where n is an integer of 1 or more), and the first pad electrode to the nth pad electrode may be spaced apart from each other and arranged in the peripheral region 20 along a second direction D2 orthogonal to the first direction D1. In addition, the plurality of side electrodes 470 may include a first side electrode to an mth side electrode (where m is an integer of 1 or more), and the first side electrode to the mth side electrode may be in direct contact with the first pad electrode to the nth pad electrode, respectively.

[0053] A plurality of side electrodes 470 can be electrically connected to an external device 101. For example, the external device 101 can generate a gate signal, a data signal, an initialization signal, an initialization voltage, a light emission control signal, a power supply voltage, etc. The external device 101 can be electrically connected to the organic light emitting display device 100 through the plurality of side electrodes 470, the plurality of pad electrodes 430, the plurality of wirings, and the flexible printed circuit board, and can provide the gate signal, the data signal, the initialization signal, the initialization voltage, the light emission control signal, the power supply voltage, etc. to the semiconductor element 250 and the pixel structure 200 included in the organic light emitting display device 100 through the flexible printed circuit board, the plurality of side electrodes 470, the plurality of pad electrodes 430, and the plurality of wirings. For example, a first portion of the flexible printed circuit board can be in direct contact with the plurality of side electrodes 470, and a second portion opposed to the first portion of the flexible printed circuit board can be in direct contact with the external device 101. In addition, a driving integrated circuit can be mounted on the flexible printed circuit board.

[0054] Although as Figure 1 shown, the case where the plurality of pad electrodes 430 and the plurality of side electrodes 470 are arranged only on the right side of the peripheral region 20 of the organic light emitting display device 100 has been described, the configuration of the present invention is not limited thereto. For example, the organic light emitting display device 100 can also arrange the plurality of pad electrodes 430 and the plurality of side electrodes 470 on the left side, the upper side, or the lower side of the peripheral region 20.

[0055] Figure 1 As shown, the shapes of the display region 10 and the peripheral region 20 each have a square planar shape, but the shapes of the display region 10 and the peripheral region 20 are not limited thereto. For example, the shapes of the display region 10 and the peripheral region 20 can also have a triangular planar shape, a rhombic planar shape, a polygonal planar shape, a circular planar shape, an orbital planar shape, or an elliptical planar shape.

[0056] Figure 3 is a circuit diagram for explaining Figure 1 the organic light emitting diodes and transistors included in the organic light emitting display device.

[0057] Referring to Figure 3 , in each of the plurality of pixel regions 30 of the organic light emitting display device 100, a pixel circuit PC and an organic light emitting diode OLED can be arranged. One pixel circuit PC can include an organic light emitting diode OLED (for example, Figure 4The pixel structure 200), the first transistor TR1 to the seventh transistor TR7, the storage capacitor CST, the high power supply voltage ELVDD wiring, the low power supply voltage ELVSS wiring, the initialization voltage VINT wiring, the data signal DATA wiring, the gate signal GW wiring, the gate initialization signal GI wiring, the light emission control signal EM wiring, the diode initialization signal GB wiring, etc. The first transistor TR1 may be equivalent to a driving transistor, and the second transistor TR2 to the seventh transistor TR7 may be equivalent to switching transistors. The first transistor TR1 to the seventh transistor TR7 may each include a first terminal, a second terminal, a channel, and a gate terminal. In each exemplary embodiment, the first terminal may be a source terminal, and the second terminal may be a drain terminal. Alternatively, the first terminal may be a drain terminal, and the second terminal may be a source terminal.

[0058] The organic light-emitting diode OLED may output light based on the driving current ID. The organic light-emitting diode OLED may include a first terminal and a second terminal. In each exemplary embodiment, the second terminal of the organic light-emitting diode OLED may receive the supply of the low power supply voltage ELVSS, and the first terminal of the organic light-emitting diode OLED may receive the supply of the high power supply voltage ELVDD. For example, the first terminal of the organic light-emitting diode OLED may be an anode terminal, and the second terminal of the organic light-emitting diode OLED may be a cathode terminal. Alternatively, the first terminal of the organic light-emitting diode OLED may be a cathode terminal, and the second terminal of the organic light-emitting diode OLED may be an anode terminal. In each exemplary embodiment, the anode terminal of the organic light-emitting diode OLED may be equivalent to Figure 4 the lower electrode 290, and the cathode terminal of the organic light-emitting diode OLED may be equivalent to Figure 4 the upper electrode 340.

[0059] The first transistor TR1 may generate the driving current ID. In each exemplary embodiment, the first transistor TR1 may operate in the saturation region. In this case, the first transistor TR1 may generate the driving current ID based on the voltage difference between the gate terminal and the source terminal. In addition, the gray scale may be represented based on the magnitude of the driving current ID supplied to the organic light-emitting diode OLED. Alternatively, the first transistor TR1 may also operate in the linear region. In this case, within one frame, the gray scale may be represented based on the sum of the times of supplying the driving current ID to the organic light-emitting diode OLED.

[0060] The gate terminal of the second transistor TR2 can receive the supply of the gate signal GW. The first terminal of the second transistor TR2 can receive the supply of the data signal DATA. The second terminal of the second transistor TR2 can be connected to the first terminal of the first transistor TR1. The second transistor TR2 can supply the data signal DATA to the first terminal of the first transistor TR1 during the active period of the gate signal GW. In this case, the second transistor TR2 can operate in the linear region.

[0061] The gate terminal of the third transistor TR3 can receive the supply of the gate signal GW. The first terminal of the third transistor TR3 can be connected to the gate terminal of the first transistor TR1. The second terminal of the third transistor TR3 can be connected to the second terminal of the first transistor TR1. The third transistor TR3 can connect the gate terminal of the first transistor TR1 and the second terminal of the first transistor TR1 during the active period of the gate signal GW. In this case, the third transistor TR3 can operate in the linear region. That is, the third transistor TR3 can diode-connect the first transistor TR1 during the active period of the gate signal GW.

[0062] The input end of the initialization voltage wiring that provides the initialization voltage VINT can be connected to the first terminals of the fourth transistor TR4 and the seventh transistor TR7, and the output end of the initialization voltage wiring can be connected to the second terminal of the fourth transistor TR4 and the first terminal of the energy storage capacitor CST.

[0063] The gate terminal of the fourth transistor TR4 can receive the supply of the gate initialization signal GI. The first terminal of the fourth transistor TR4 can receive the supply of the initialization voltage VINT. The second terminal of the fourth transistor TR4 can be connected to the gate terminal of the first transistor TR1.

[0064] The fourth transistor TR4 can supply an initialization voltage VINT to the gate terminal of the first transistor TR1 during the active period of the gate initialization signal GI. In this case, the fourth transistor TR4 can operate in the linear region. That is, the fourth transistor TR4 can initialize the gate terminal of the first transistor TR1 with the initialization voltage VINT during the active period of the gate initialization signal GI. In each exemplary embodiment, the voltage level of the initialization voltage VINT can have a voltage level sufficiently lower than the voltage level of the data signal DATA maintained by the storage capacitor CST in the previous frame, and the initialization voltage VINT can be supplied to the gate terminal of the first transistor TR1. In each other exemplary embodiment, the voltage level of the initialization voltage can have a voltage level sufficiently higher than the voltage level of the data signal DATA maintained by the storage capacitor CST in the previous frame, and the initialization voltage can be supplied to the gate terminal of the first transistor.

[0065] The gate terminal of the fifth transistor TR5 can receive the emission control signal EM. The first terminal of the fifth transistor TR5 can be connected to the high power supply voltage ELVDD wiring. The second terminal of the fifth transistor TR5 can be connected to the first terminal of the first transistor TR1. The fifth transistor TR5 can supply the high power supply voltage ELVDD to the first terminal of the first transistor TR1 during the active period of the emission control signal EM. Conversely, the fifth transistor TR5 can block the supply of the high power supply voltage ELVDD during the non-active period of the emission control signal EM. In this case, the fifth transistor TR5 can operate in the linear region. By the fifth transistor TR5 supplying the high power supply voltage ELVDD to the first terminal of the first transistor TR1 during the active period of the emission control signal EM, the first transistor TR1 can generate a drive current ID. In addition, by the fifth transistor TR5 blocking the supply of the high power supply voltage ELVDD during the non-active period of the emission control signal EM, the data signal DATA supplied to the first terminal of the first transistor TR1 can be supplied to the gate terminal of the first transistor TR1.

[0066] The sixth transistor TR6 (for example, Figure 4The gate terminal of the semiconductor element 250) can receive the supply of the light emission control signal EM. The first terminal of the sixth transistor TR6 can be connected to the second terminal of the first transistor TR1. The second terminal of the sixth transistor TR6 can be connected to the first terminal of the organic light emitting diode OLED. The sixth transistor TR6 can supply the drive current ID generated by the first transistor TR1 to the organic light emitting diode OLED during the active period of the light emission control signal EM. In this case, the sixth transistor TR6 can operate in the linear region. That is, by supplying the drive current ID generated by the first transistor TR1 to the organic light emitting diode OLED during the active period of the light emission control signal EM, the organic light emitting diode OLED can output light. In addition, by electrically separating the first transistor TR1 and the organic light emitting diode OLED from each other during the non-active period of the light emission control signal EM, the data signal DATA (specifically, the data signal compensated for the threshold voltage) supplied to the second terminal of the first transistor TR1 can be supplied to the gate terminal of the first transistor TR1.

[0067] The gate terminal of the seventh transistor TR7 can receive the supply of the diode initialization signal GB. The first terminal of the seventh transistor TR7 can receive the supply of the initialization voltage VINT. The second terminal of the seventh transistor TR7 can be connected to the first terminal of the organic light emitting diode OLED. The seventh transistor TR7 can supply the initialization voltage VINT to the first terminal of the organic light emitting diode OLED during the active period of the diode initialization signal GB. In this case, the seventh transistor TR7 can operate in the linear region. That is, the seventh transistor TR7 can initialize the first terminal of the organic light emitting diode OLED with the initialization voltage VINT during the active period of the diode initialization signal GB.

[0068] The energy storage capacitor CST may include a first terminal and a second terminal. The energy storage capacitor CST may be connected between the high power supply voltage ELVDD wiring and the gate terminal of the first transistor TR1. For example, the first terminal of the energy storage capacitor CST may be connected to the gate terminal of the first transistor TR1, and the second terminal of the energy storage capacitor CST may be connected to the high power supply voltage ELVDD wiring. The energy storage capacitor CST may maintain the voltage level of the gate terminal of the first transistor TR1 during the inactive period of the gate signal GW. The inactive period of the gate signal GW may include the active period of the light emission control signal EM, and the drive current ID generated by the first transistor TR1 during the active period of the light emission control signal EM may be supplied to the organic light emitting diode OLED. Therefore, based on the voltage level maintained by the energy storage capacitor CST, the drive current ID generated by the first transistor TR1 may be supplied to the organic light emitting diode OLED.

[0069] Although the case where the pixel circuit PC of the present invention includes seven transistors and one energy storage capacitor has been described, the configuration of the present invention is not limited thereto. For example, the pixel circuit PC may also have a configuration including at least one transistor and at least one energy storage capacitor.

[0070] Figure 4 is a cross-sectional view taken along the Figure 1 I-I' line.

[0071] Referring to Figure 4 , the organic light emitting display device 100 may include a lower substrate 110, a semiconductor element 250, a pad electrode 430, a planarization layer 270, a pixel defining film 310, a pixel structure 200, an upper substrate 410, a sealing member 390, a side electrode 470, etc. Here, the semiconductor element 250 may include an active layer 130, a gate insulating layer 150, a gate electrode 170, an interlayer insulating layer 190, a source electrode 210, and a drain electrode 230, and the pixel structure 200 may include a lower electrode 290, a light emitting layer 330, and an upper electrode 340.

[0072] As described above, the organic light emitting display device 100 may include a display area 10 and a peripheral area 20. For example, an image may be displayed in the display area 10 through the pixel structure 200 and the semiconductor element 250, and the lower substrate 110 and the upper substrate 410 may be hermetically bonded through the sealing member 390 in the peripheral area 20.

[0073] A lower substrate 110 including a transparent or opaque material may be provided. The lower substrate 110 may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, an F-doped quartz substrate, a sodalime glass substrate, a non-alkali glass substrate, etc. In each exemplary embodiment, in the outer contour portion of the peripheral region 20, the lower substrate 110 may have an inclined surface E1. In addition, as the organic light-emitting display device 100 has a display region 10 and a peripheral region 20, the lower substrate 110 may also be divided into a display region 10 and a peripheral region 20. For example, Figure 4 The illustrated peripheral region 20 may correspond to Figure 1 the peripheral region 20 located on the right side of the display region 10 among the illustrated peripheral regions 20.

[0074] A buffer layer (not shown) may also be disposed on the lower substrate 110. The buffer layer may be disposed over the entire lower substrate 110. The buffer layer may prevent the diffusion of metal atoms or impurities from the lower substrate 110 to the semiconductor element 250 and the pixel structure 200, and may adjust the heat transfer rate during the crystallization process for forming the active layer 130 to obtain a substantially uniform active layer 130. In addition, in the case where the surface of the lower substrate 110 is uneven, the buffer layer may function to improve the flatness of the surface of the lower substrate 110. Two or more buffer layers may be provided on the lower substrate 110 or the buffer layer may not be disposed according to the type of the lower substrate 110. For example, the buffer layer may include an organic material or an inorganic material.

[0075] The active layer 130 may be disposed in the display region 10 on the lower substrate 110 and may include a metal oxide semiconductor, an inorganic semiconductor (e.g., amorphous silicon, poly silicon), or an organic semiconductor, etc. The semiconductor element 250 may have a source region, a drain region, and a channel region located between the source region and the drain region.

[0076] A gate insulating layer 150 may be disposed on the active layer 130. The gate insulating layer 150 may cover the active layer 130 in the display area 10 on the lower substrate 110, and the gate insulating layer 150 may be disposed in the entire display area 10 on the lower substrate 110. In each exemplary embodiment, the gate insulating layer 150 may not be disposed in the peripheral area 20 on the lower substrate 110. In other exemplary embodiments, the gate insulating layer 150 may also be disposed in the entire display area 10 and the peripheral area 20 on the lower substrate 110. The gate insulating layer 150 may sufficiently cover the active layer 130 on the lower substrate 110 and may have a substantially flat upper surface without creating height differences around the active layer 130. Alternatively, the gate insulating layer 150 may also cover the active layer 130 on the lower substrate 110 and may be disposed along the contour of the active layer 130 with a uniform thickness. The gate insulating layer 150 may include a silicon compound, a metal oxide, etc. For example, the gate insulating layer 150 may include silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), silicon oxycarbide (SiOC), silicon carbonitride (SiCN), aluminum oxide (AlO), aluminum nitride (AlN), tantalum oxide (TaO), hafnium oxide (HfO), zirconium oxide (ZrO), titanium oxide (TiO), etc. In other exemplary embodiments, the gate insulating layer 150 may also have a multi-layer structure including a plurality of insulating layers. The plurality of insulating layers may have different materials and different thicknesses from each other.

[0077] A gate electrode 170 may be disposed in the display area 10 on the gate insulating layer 150. In other words, the gate electrode 170 may be disposed on a portion of the channel region where the active layer 130 is provided in the lower part of the gate insulating layer 150. The gate electrode 170 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These materials may be used alone or in combination with each other. In other exemplary embodiments, the gate electrode 170 may also have a multi-layer structure including a plurality of metal layers. The plurality of metal layers may have different materials and different thicknesses from each other.

[0078] An interlayer insulating layer 190 may be disposed on the gate electrode 170. The interlayer insulating layer 190 in the display area 10 on the gate insulating layer 150 may cover the gate electrode 170, and the interlayer insulating layer 190 may be disposed on the entire gate insulating layer 150. In each exemplary embodiment, the interlayer insulating layer 190 may not be disposed in the peripheral area 20 on the lower substrate 110. In other exemplary embodiments, the interlayer insulating layer 190 may also be disposed on the entire display area 10 and the peripheral area 20 on the lower substrate 110. The interlayer insulating layer 190 may sufficiently cover the gate electrode 170 on the gate insulating layer 150 and may have a substantially flat upper surface without generating a height difference around the gate electrode 170. Alternatively, the interlayer insulating layer 190 may cover the gate electrode 170 on the gate insulating layer 150, and the interlayer insulating layer 190 may be disposed along the contour of the gate electrode 170 with a uniform thickness. The interlayer insulating layer 190 may include a silicon compound, a metal oxide, etc.

[0079] In the display area 10 on the interlayer insulating layer 190, a source electrode 210 and a drain electrode 230 may be disposed. The source electrode 210 may be connected to the source region of the active layer 130 through a first contact hole formed by removing a first portion of the gate insulating layer 150 and the interlayer insulating layer 190, and the drain electrode 230 may be connected to the drain region of the active layer 130 through a second contact hole formed by removing a second portion of the gate insulating layer 150 and the interlayer insulating layer 190. The source electrode 210 and the drain electrode 230 may each include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These materials may be used alone or in combination with each other. In other exemplary embodiments, the source electrode 210 and the drain electrode 230 may also each have a multilayer structure including a plurality of metal layers. The plurality of metal layers may have different materials and different thicknesses from each other.

[0080] Thus, a semiconductor element 250 including an active layer 130, a gate insulating layer 150, a gate electrode 170, an interlayer insulating layer 190, a source electrode 210, and a drain electrode 230 is configured.

[0081] Although the case where the organic light emitting display device 100 has a configuration including one transistor (e.g., the semiconductor element 250) has been described, the configuration of the present invention is not limited thereto. For example, the organic light emitting display device 100 may also have a configuration including at least two transistors and at least one capacitor.

[0082] In addition, although the case where the semiconductor element 250 has a top gate structure has been described, the configuration of the present invention is not limited thereto. For example, the semiconductor element 250 may also have a bottom gate structure and / or a double gate structure.

[0083] The pad electrode 430 may be disposed in the peripheral region 20 on the lower substrate 110. In each exemplary embodiment, the pad electrode 430 may be disposed on the inclined surface E1 of the lower substrate 110 in the peripheral region 20 between the lower substrate 110 and the upper substrate 410. In addition, the pad electrode 430 may protrude from the sealing member 390 along the first direction D1 on the lower substrate 110, where the first direction D1 is the direction from the display region 10 toward the peripheral region 20. Further, the pad electrode 430 may extend along the direction from the peripheral region 20 toward the display region 10 on the inclined surface E1 of the lower substrate 110, and may be electrically connected to the semiconductor element 250 or the pixel structure 200.

[0084] In addition, the first end of the pad electrode 430 may be aligned with the outermost contour surface of the organic light emitting display device 100 (e.g., the side surface of the lower substrate 110). Further, the second end of the pad electrode 430 opposite to the first end may be connected to one of the gate signal wiring, data signal wiring, power supply voltage wiring, initialization signal wiring, initialization voltage wiring, and light emission control signal wiring. That is, one of the gate signal, data signal, power supply voltage, initialization signal, initialization voltage, and light emission control signal generated from the external device 101 may be transmitted to the pixel structure 200 through the flexible printed circuit board and the side electrode 470.

[0085] The pad electrode 430 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. The pad electrode 430 may include those containing gold (Au), silver (Ag), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr), tantalum (Ta), tungsten (W), copper (Cu), molybdenum (Mo), scandium (Sc), neodymium (Nd), iridium (Ir), aluminum-containing alloy, aluminum nitride (AlN), silver-containing alloy, tungsten nitride (WN), copper-containing alloy, molybdenum-containing alloy, titanium nitride (TiN), chromium nitride (CrN), tantalum nitride (TaN), strontium ruthenium oxide (SrRuO), zinc oxide (ZnO), indium tin oxide (ITO), tin oxide (SnO), indium oxide (InO), gallium oxide (GaO), indium zinc oxide (IZO), etc. These substances may be used alone or in combination with each other. In each exemplary embodiment, the same substance may be used to simultaneously form the pad electrode 430, the source electrode 210, and the drain electrode 230. Alternatively, a conductive wiring electrically connected to the pad electrode 430 may be further disposed below the pad electrode 430, and the conductive wiring may be formed simultaneously with the gate electrode 170 using the same substance as the gate electrode 170. In other exemplary embodiments, the pad electrode 430 may also have a multilayer structure including a plurality of metal layers. The plurality of metal layers may have different substances and different thicknesses from each other.

[0086] A planarization layer 270 may be disposed on the interlayer insulating layer 190, the source electrode 210, and the drain electrode 230 in the display area 10. For example, the planarization layer 270 may be disposed with a relatively thick thickness so as to sufficiently cover the source electrode 210 and the drain electrode 230 on the interlayer insulating layer 190. In this case, the planarization layer 270 may have a substantially flat upper surface. In order to achieve the flat upper surface of the planarization layer 270, a planarization process may be additionally performed on the planarization layer 270. A contact hole is formed by removing a part of the planarization layer 270, and a part of the upper surface of the drain electrode 230 may be exposed. The planarization layer 270 may include an organic substance or an inorganic substance, etc. In each exemplary embodiment, the planarization layer 270 may include an organic substance. For example, the planarization layer 270 may include photoresist, polyacryl-based resin, polyimide-based resin, polyamide-based resin, siloxane-based resin, acryl-based resin, epoxy-based resin, etc.

[0087] The lower electrode 290 may be disposed in the display area 10 on the planarization layer 270. The lower electrode 290 may be connected to the drain electrode 230 through a contact hole penetrating the planarization layer 270. In addition, the lower electrode 290 may be electrically connected to the semiconductor element 250. The lower electrode 290 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These materials may be used alone or in combination with each other. In other exemplary embodiments, the lower electrode 290 may also have a multilayer structure including a plurality of metal layers. The plurality of metal layers may have different materials and different thicknesses from each other.

[0088] The pixel defining film 310 may be disposed in a part of the lower electrode 290 and in the display area 10 on the planarization layer 270. The pixel defining film 310 may cover both side portions of the lower electrode 290 and may expose a part of the upper surface of the lower electrode 290. The pixel defining film 310 may be made of an organic material or an inorganic material. In each exemplary embodiment, the pixel defining film 310 may include an organic material.

[0089] The light emitting layer 330 may be disposed in the display area 10 on the lower electrode 290 exposed by the pixel defining film 310. The light emitting layer 330 may be formed of at least one light emitting material that can emit light of different colors (i.e., red light, green light, blue light, etc.) according to the pixel structure. Alternatively, the light emitting layer 330 may stack a plurality of light emitting materials that can emit light of different colors such as red light, green light, and blue light to emit white light as a whole. In this case, a color filter (for example, disposed on the bottom surface or the upper surface of the upper substrate 410 to overlap with the light emitting layer 330) may also be disposed on the light emitting layer 330. The color filter may include at least one of a red color filter, a green color filter, and a blue color filter. Optionally, the color filter may also include a yellow filter, a cyan filter, and a magenta filter. The color filter may include a photosensitive resin or a color photoresist.

[0090] The upper electrode 340 may be disposed in the display area 10 on the pixel defining film 310 and the light emitting layer 330. The upper electrode 340 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These materials may be used alone or in combination with each other. In other exemplary embodiments, the upper electrode 340 may also have a multilayer structure including a plurality of metal layers. The plurality of metal layers may have different materials and different thicknesses from each other.

[0091] Thus, a pixel structure 200 including the lower electrode 290, the light emitting layer 330, and the upper electrode 340 may be configured.

[0092] The peripheral region 20 on the pad electrode 430 may be configured with a sealing member 390. In other words, the sealing member 390 may be disposed along the peripheral region 20 between the lower substrate 110 and the upper substrate 410, and may have a substantially hollow square shape. The upper surface of the sealing member 390 may be in direct contact with the bottom surface of the upper substrate 410, and the bottom surface of the sealing member 390 may be in direct contact with a part of the pad electrode 430. In each exemplary embodiment, the sealing member 390 may cover a part of the pad electrode 430 and may not overlap with the first end portion of the pad electrode 430. In other words, the sealing member 390 may not overlap with the inclined surface E1 of the lower substrate 110. The sealing member 390 may include frit and the like. In addition, the sealing member 390 may further include a photocurable material. For example, the sealing member 390 may include a mixture of an organic material and a photocurable material, and the mixture may be irradiated with ultraviolet rays (UV), laser, visible light, etc. to be cured to obtain the sealing member 390. The photocurable material included in the sealing member 390 may include epoxy acrylate resin, polyester acrylate resin, urethane acrylate resin, polybutadine acrylate resin, silicon acrylate resin, alkyl acrylate resin, etc.

[0093] For example, the mixture of the organic material and the photocurable material may be irradiated with laser. Through the irradiation of this laser, the mixture may change from a solid state to a liquid state, and after a predetermined time, the liquid-state mixture may be cured again into a solid state. According to the state change of the mixture, the upper substrate 410 may be sealed and bonded to the lower substrate 110 at the same time.

[0094] Although the Figure 4 illustrated sealing member 390 has a trapezoidal shape in which the width of the upper surface is smaller than the width of the bottom surface, the configuration of the present invention is not limited thereto. For example, the sealing member 390 may also have a trapezoidal shape in which the width of the upper surface is larger than the width of the bottom surface, a rectangular shape, a square shape, etc.

[0095] An upper substrate 410 may be disposed on the sealing member 390 and the upper electrode 340 (e.g., the pixel structure 200). In each exemplary embodiment, the size of the lower substrate 110 and the size of the upper substrate 410 may be the same and may be set to overlap with each other. The upper substrate 410 may substantially include the same material as the lower substrate 110. For example, the upper substrate 410 may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate, a soda-lime glass substrate, a non-alkali glass substrate, etc.

[0096] A side electrode 470 may be disposed on the outermost surface of the organic light emitting display device 100. For example, the side surface of the lower substrate 110, the side surface of the upper substrate 410, the side surface of the first end portion of the pad electrode 430, the upper surface of the first end portion of the pad electrode 430, and the side surface of the sealing member 390 may be defined as the outermost surface of the organic light emitting display device 100, and the side electrode 470 may be in contact with the outermost surface. In other words, the outermost surface may be in the peripheral region 20 corresponding to the space 391 defined by the upper substrate 410, the sealing member 390, and the pad electrode 430 (see Figure 10 ). Since the sealing member 390 is disposed inside the inclined surface E1 without overlapping with the inclined surface E1, the space 391 may be formed. The side electrode 470 may be disposed along the contour of the space 391. In each exemplary embodiment, the side electrode 470 may be in direct contact with or electrically connected to the side surface and the upper surface of the first end portion of the pad electrode 430 and may overlap with the inclined surface E1.

[0097] Optionally, the side electrode 470 may also be in contact with a part of the side surface of the lower substrate 110, a part of the side surface of the upper substrate 410, the side surface of the first end portion of the pad electrode 430, the upper surface of the first end portion of the pad electrode 430, and a part of the side surface of the sealing member 390.

[0098] The side electrode 470 may include a metal having a relatively high metal adhesion force. For example, the side electrode 470 may include Ti, Mo, Ni, Ta, Nd, etc. In other exemplary embodiments, the side electrode 470 may be made of a metal having a relatively low resistance such as Au, Ag, Cu, Al, etc., or may be made of a metal or alloy having a relatively high strength such as Ti, Mo, a titanium-containing alloy, a molybdenum-containing alloy, etc. (e.g., a metal having a Mohs hardness of 5 or more). In addition, the side electrode 470 may also have a multi-layer structure including a plurality of metal layers. The plurality of metal layers may have different substances and different thicknesses from each other.

[0099] Thus, the Figures 1 to 4 organic light emitting display device 100 as shown can be provided.

[0100] For example, in an existing organic light-emitting display device, in order to bring the pad electrode 430 into contact with the side electrode 470, a part of the upper substrate 410, a part of the sealing member 390, a part of the pad electrode 430, and a part of the lower substrate 110 located in the peripheral region 20 are removed to align the side surfaces of the upper substrate 410, the sealing member 390, the pad electrode 430, and the lower substrate 110. The side electrode 470 can be disposed on the side surface, and the side electrode 470 and the pad electrode 430 can be in contact or electrically connected. In this case, the cross-section of the pad electrode 430 exposed to the outside is relatively small, so the contact area between the cross-section of the pad electrode 430 and the side electrode 470 may be relatively small, and the contact resistance may increase.

[0101] The organic light-emitting display device 100 according to each exemplary embodiment of the present invention includes a lower substrate 110 having an inclined surface E1, so that the contact area between the pad electrode 430 and the side electrode 470 can be relatively increased, thereby reducing the contact resistance between the pad electrode 430 and the side electrode 470.

[0102] In addition, by not removing a part of the upper substrate 410 and a part of the sealing member 390 located in the peripheral region 20, the side electrode 470 can be disposed along the contour of the space 391. Thus, when a flexible circuit board is disposed on the side electrode 470 in order to electrically connect the organic light-emitting display device 100 to an external device 101, the contact area between the flexible circuit board and the side electrode 470 is increased, thereby improving the adhesion characteristics between the flexible circuit board and the side electrode 470.

[0103] Figures 5 to 10 It is a cross-sectional view showing a method of manufacturing an organic light-emitting display device according to each exemplary embodiment of the present invention.

[0104] Referring to Figure 5 , a lower substrate 110 including a transparent or opaque material can be provided. The lower substrate 110 can be divided into a display region 10, a peripheral region 20, and a dummy region 50. For example, the peripheral region 20 can substantially surround the display region 10, and the dummy region 50 can be located on one side of the peripheral region 20. The lower substrate 110 can be formed using a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate, a soda-lime glass substrate, a non-alkali glass substrate, or the like. After providing the lower substrate 110, a laser can be irradiated onto a part of the peripheral region 20 and a part of the dummy region 50.

[0105] Referring to Figure 6, the laser can be irradiated to form grooves in a part of the peripheral region 20 and a part of the dummy region 50, and a plurality of inclined surfaces can be formed inside the grooves. For example, the inclined surface located in the peripheral region 20 among the plurality of inclined surfaces is defined as the inclined surface E1.

[0106] The active layer 130 can be formed in the display region 10 on the lower substrate 110, and can be formed using a metal oxide semiconductor, an inorganic semiconductor, an organic semiconductor, or the like. The semiconductor element 250 can have a source region, a drain region, and a channel region located between the source region and the drain region.

[0107] A gate insulating layer 150 can be formed on the active layer 130. In the display region 10 on the lower substrate 110, the gate insulating layer 150 can cover the active layer 130, and the gate insulating layer 150 can be formed in the entire display region 10 on the lower substrate 110. The gate insulating layer 150 can be formed using a silicon compound, a metal oxide, or the like. For example, the gate insulating layer 150 can include SiO, SiN, SiON, SiOC, SiCN, AlO, AlN, TaO, HfO, ZrO, TiO, etc.

[0108] A gate electrode 170 can be formed in the display region 10 on the gate insulating layer 150. In other words, the gate electrode 170 can be formed on a part of the gate insulating layer 150 where the channel region provided with the active layer 130 is located below. The gate electrode 170 can be formed using a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. These materials can be used alone or in combination with each other.

[0109] An interlayer insulating layer 190 can be formed on the gate electrode 170. The interlayer insulating layer 190 can cover the gate electrode 170 in the display region 10 on the gate insulating layer 150, and the interlayer insulating layer 190 can be disposed on the entire gate insulating layer 150. The interlayer insulating layer 190 can be formed using a silicon compound, a metal oxide, or the like.

[0110] In the display region 10 on the interlayer insulating layer 190, a source electrode 210 and a drain electrode 230 can be formed. The source electrode 210 can be connected to the source region of the active layer 130 through a first contact hole formed by removing a first part of the gate insulating layer 150 and the interlayer insulating layer 190, and the drain electrode 230 can be connected to the drain region of the active layer 130 through a second contact hole formed by removing a second part of the gate insulating layer 150 and the interlayer insulating layer 190.

[0111] Thus, a semiconductor element 250 including the active layer 130, the gate insulating layer 150, the gate electrode 170, the interlayer insulating layer 190, the source electrode 210, and the drain electrode 230 can be formed.

[0112] In the peripheral region 20 on the lower substrate 110, the pad electrode 430 may be formed to overlap with the groove. In each exemplary embodiment, the pad electrode 430 is formed to overlap with the inclined surface E1 in the peripheral region 20 on the lower substrate 110 and may extend in a direction from the peripheral region 20 toward the display region 10. In addition, the pad electrode 430 may be formed simultaneously with the source electrode 210 and the drain electrode 230 using the same material as the source electrode 210 and the drain electrode 230. For example, after forming a pre-electrode layer over the entire interlayer insulating layer 190 in the display region 10 and the lower substrate 110 in the peripheral region 20, a part of the pre-electrode layer may be etched to simultaneously form the pad electrode 430, the source electrode 210, and the drain electrode 230. The pad electrode 430, the source electrode 210, and the drain electrode 230 may each include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. For example, the pad electrode 430, the source electrode 210, and the drain electrode 230 may each include Au, Ag, Al, Pt, Ni, Ti, Pd, Mg, Ca, Li, Cr, Ta, W, Cu, Mo, Sc, Nd, Ir, an aluminum alloy, AlNx, a silver alloy, WNx, a copper alloy, a molybdenum alloy, TiN, CrN, TaN, SrRuO, ZnO, ITO, SnO, InO, GaO, IZO, etc. These materials may be used alone or in combination with each other.

[0113] Referring to Figure 8 , in the display region 10 on the interlayer insulating layer 190, the source electrode 210, and the drain electrode 230, a planarization layer 270 may be formed. For example, the planarization layer 270 may have a relatively thick thickness on the interlayer insulating layer 190 to sufficiently cover the source electrode 210 and the drain electrode 230. A part of the upper surface of the drain electrode 230 may be exposed through a contact hole formed by removing a part of the planarization layer 270. The planarization layer 270 may be formed using an organic material. For example, the planarization layer 270 may include a photoresist, a polyacrylic resin, a polyimide resin, a polyamide resin, a silicone resin, an acrylic resin, an epoxy resin, etc.

[0114] The lower electrode 290 may be formed in the display region 10 on the planarization layer 270. The lower electrode 290 may be connected to the drain electrode 230 through the contact hole penetrating the planarization layer 270. The lower electrode 290 may be formed using a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These materials may be used alone or in combination with each other.

[0115] The pixel defining film 310 may be formed on a part of the lower electrode 290 and on the display area 10 of the planarization layer 270. The pixel defining film 310 may cover both side portions of the lower electrode 290 and expose a part of the upper surface of the lower electrode 290. The pixel defining film 310 may be formed using an organic material.

[0116] The light emitting layer 330 may be formed on the lower electrode 290 exposed by the pixel defining film 310 in the display area 10. The light emitting layer 330 may be formed using at least one of a variety of light emitting materials that can emit light of different colors (i.e., red light, green light, blue light, etc.) according to the pixel structure. Alternatively, the light emitting layer 330 may stack a variety of light emitting materials that can emit light of different colors such as red light, green light, and blue light to emit white light as a whole.

[0117] The upper electrode 340 may be formed on the pixel defining film 310 and the light emitting layer 330 in the display area 10. The upper electrode 340 may be formed using a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These materials may be used alone or in combination with each other.

[0118] Thus, a pixel structure 200 including the lower electrode 290, the light emitting layer 330, and the upper electrode 340 may be formed.

[0119] Refer to Figure 9 , in the peripheral area 20 on the pad electrode 430, a sealing member 390 may be formed. In other words, the sealing member 390 may be disposed along the peripheral area 20 on the lower substrate 110 and may substantially have an inner-empty square shape. The sealing member 390 may cover a part of the pad electrode 430 and does not overlap with the inclined surface E1 of the lower substrate 110. The sealing member 390 may be formed using a glass frit, etc. In addition, the sealing member 390 may further include a photocurable material. For example, the sealing member 390 may include a mixture of an organic material and a photocurable material. The photocurable material included in the sealing member 390 may be formed using an epoxy acrylate resin, a polyester acrylate resin, a urethane acrylate resin, a polybutadiene acrylate resin, an acrylic silicone resin, an acrylic alkyl ester resin, etc.

[0120] An upper substrate 410 may be formed on the sealing member 390 and the pixel structure 200. The upper substrate 410 may be formed using substantially the same material as the lower substrate 110. For example, the upper substrate 410 may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate, a soda-lime glass substrate, a non-alkali glass substrate.

[0121] After forming the upper substrate 410, a laser can be irradiated onto the sealing member 390. Through this laser irradiation, the sealing member 390 can change from a solid state to a liquid state, and after a predetermined time, the liquid-state sealing member 390 can be solidified again into a solid state. According to the state change of the sealing member 390, the upper substrate 410 can be sealed and bonded relative to the lower substrate 110. In other exemplary embodiments, the upper substrate 410 having the sealing member 390 formed on its bottom surface can also be bonded to the lower substrate 110.

[0122] After hermetically bonding the upper substrate 410 and the lower substrate 110, the lower substrate 110 and the upper substrate 410 located in the dummy region 50 can be removed along the Figure 9 II-II' line shown. In this case, the size of the lower substrate 110 and the size of the upper substrate 410 can be the same, and the upper substrate 410 and the lower substrate 110 can be arranged to overlap each other. Optionally, in the case where the pad electrode 430 is formed in the dummy region 50 of the lower substrate 110, a part of the pad electrode 430 can also be removed.

[0123] Referring to Figure 10 , after removing the lower substrate 110 and the upper substrate 410 located in the dummy region 50, the inclined surface E1 can be formed only in the peripheral region 20 of the lower substrate 110.

[0124] In addition, a space 391 defined by the upper substrate 410, the sealing member 390, and the pad electrode 430 can be formed in the peripheral region 20. For example, the sealing member 390 is configured not to overlap with the inclined surface E1 inside the inclined surface E1, so the space 391 can be formed.

[0125] Referring to Figure 4 , the side electrode 470 can be formed on the side surface of the lower substrate 110, the side surface of the upper substrate 410, the side surface of the first end portion of the pad electrode 430, the upper surface of the first end portion of the pad electrode 430, and the side surface of the sealing member 390 located in the peripheral region 20. In other words, the side electrode 470 can be formed along the contour of the space 391, that is, the side electrode 470 can be formed in the space 391. The side electrode 470 can be in direct contact with or electrically connected to the side surface and the upper surface of the first end portion of the pad electrode 430, and can overlap with the inclined surface E1.

[0126] The side electrode 470 can be formed using a metal having a relatively high metal adhesion force. For example, the side electrode 470 can include Ti, Mo, Ni, Ta, Nd, etc. In other exemplary embodiments, the side electrode 470 can be composed of a metal having a relatively low resistance such as Au, Ag, Cu, Al, etc., or can be composed of a metal or alloy having a relatively high strength such as Ti, Mo, a titanium-containing alloy, a molybdenum-containing alloy, etc.

[0127] Thus, it is possible to fabricate Figure 4 the organic light-emitting display device 100 as shown.

[0128] In the method for manufacturing an organic light-emitting display device according to the exemplary embodiments of the present invention, a groove is formed in the lower substrate 110 using a laser, and the lower substrate 110 located in the dummy region 50 is removed, so that an inclined surface E1 can be easily formed on the lower substrate 110.

[0129] Figure 11 is a cross-sectional view showing the organic light-emitting display device according to the exemplary embodiments of the present invention. Figure 11 The illustrated organic light-emitting display device 500 can have a configuration substantially the same as or similar to that of the organic light-emitting display device 100 described with reference to Figures 1 to 4 except for the second inclined surface E2 formed on the upper substrate 410. In Figure 11 it, for the components substantially the same as or similar to the components described with reference to Figures 1 to 4 the repetitive description is omitted.

[0130] Referring to Figures 1 to 3 and Figure 11 , the organic light-emitting display device 500 can include a lower substrate 110, a semiconductor element 250, a pad electrode 430, a planarization layer 270, a pixel definition film 310, a pixel structure 200, an upper substrate 410, a sealing member 390, a side electrode 470, etc. Here, the semiconductor element 250 can include an active layer 130, a gate insulating layer 150, a gate electrode 170, an interlayer insulating layer 190, a source electrode 210, and a drain electrode 230, and the pixel structure 200 can include a lower electrode 290, a light-emitting layer 330, and an upper electrode 340.

[0131] The upper substrate 410 can be disposed on the sealing member 390 and the upper electrode 340. In the exemplary embodiments, the size of the lower substrate 110 and the size of the upper substrate 410 can be the same and can be set to overlap each other. In addition, in the outer contour portion of the peripheral region 20, the upper substrate 410 can have a second inclined surface E2. The second inclined surface E2 can face the inclined surface E1.

[0132] A side electrode 470 may be disposed on the outermost contour surface of the organic light-emitting display device 500. For example, the side surface of the lower substrate 110, the side surface of the upper substrate 410, the side surface of the first end portion of the pad electrode 430, the upper surface of the first end portion of the pad electrode 430, and the side surface of the sealing member 390 may be defined as the outermost contour surface of the organic light-emitting display device 500, and the side electrode 470 may be in contact with the outermost contour surface. In other words, the outermost contour surface may be a space in the peripheral region 20 corresponding to the space defined by the upper substrate 410, the sealing member 390, and the pad electrode 430. The sealing member 390 is disposed inside the inclined surface E1 and the second inclined surface E2 without overlapping the inclined surface E1, so that the space may be formed. The side electrode 470 may be disposed along the contour of the space. In each exemplary embodiment, the side electrode 470 may be in direct contact with or electrically connected to the side surface and the upper surface of the first end portion of the pad electrode 430, and may overlap the inclined surface E1 and the second inclined surface E2.

[0133] The organic light-emitting display device 500 according to each exemplary embodiment of the present invention includes an upper substrate 410 having a second inclined surface E2. Thus, when a flexible circuit board is disposed on the side electrode 470 for the organic light-emitting display device 500 to be electrically connected to an external device 101, the contact area between the flexible circuit board and the side electrode 470 is relatively increased, and thereby the bonding characteristics between the flexible circuit board and the side electrode 470 can be further improved.

[0134] As described above, the present invention has been described with reference to the exemplary embodiments of the present invention. However, those skilled in the art should understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention described in the claims.

[0135] (Industrial Applicability)

[0136] The present invention can be applied to various display devices including organic light-emitting display devices. For example, the present invention can be applied to display devices for vehicles, ships, and aircrafts, portable communication devices, display devices for exhibitions or information transmission, medical display devices, and other various display devices.

Claims

1. An organic light-emitting display device, comprising: A lower substrate, including a display area and a peripheral area, having a first inclined surface at an outer contour portion of the peripheral area; A pixel structure disposed on the display area of the lower substrate; An upper substrate disposed on the pixel structure; A pad electrode disposed on the lower substrate in the peripheral area between the lower substrate and the upper substrate and extending onto the first inclined surface; And A side electrode disposed on one side surface of the lower substrate and the upper substrate, and overlapping and contacting the pad electrode on the first inclined surface.

2. The organic light-emitting display device according to claim 1, wherein The side electrode overlaps with the first inclined surface of the lower substrate.

3. The organic light-emitting display device according to claim 1, wherein The size of the lower substrate is the same as the size of the upper substrate, and the lower substrate and the upper substrate are arranged to overlap each other.

4. The organic light-emitting display device according to claim 1, wherein The pad electrode extends on the first inclined surface of the lower substrate along a direction from the peripheral area toward the display area and is electrically connected to the pixel structure.

5. The organic light-emitting display device according to claim 1, wherein Further comprising: A sealing member disposed in the peripheral area between the lower substrate and the upper substrate.

6. The organic light-emitting display device according to claim 5, wherein The sealing member covers a part of the pad electrode.

7. The organic light-emitting display device according to claim 5, wherein The sealing member does not overlap with the first inclined surface of the lower substrate.

8. The organic light-emitting display device according to claim 5, wherein The sealing member and the side electrode are in contact.

9. The organic light-emitting display device according to claim 5, wherein In the peripheral area, the side electrode is disposed in a space defined by the upper substrate, the sealing member, and the pad electrode.

10. The organic light-emitting display device according to claim 1, wherein The upper substrate has a second inclined surface formed facing the first inclined surface.

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