Thin film transistor and manufacturing method thereof, display panel, and display device

Abstract

The present application discloses a thin film transistor and a method for preparing the same, a display panel, and a display device, and relates to the field of display technology. The thin film transistor includes an active layer, a source and drain electrode, and an oxygen supplement layer. Since the orthographic projection of the oxygen supplement layer on the substrate substrate overlaps at least partially with the orthographic projection of the target portion of the active layer on the substrate substrate, the oxygen introduced when preparing the oxygen supplement layer included in the thin film transistor can diffuse to the target portion of the active layer, thereby reducing the defects of the target portion of the active layer, and the performance of the thin film transistor is better.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a thin film transistor and a method for preparing the same, a display panel, and a display device. Background Art

[0002] A thin film transistor (TFT) generally includes a gate electrode, a gate insulating layer, an active layer, and a source-drain electrode layer which are sequentially arranged on a substrate. The source-drain electrode layer includes a source electrode and a drain electrode respectively connected to the active layer, and the source electrode and the drain electrode are obtained by etching a metal material with an etchant.

[0003] However, the active layer is easily affected by the etchant and produces defects, resulting in poor performance of the TFT. Summary of the invention

[0004] The present application provides a thin film transistor and a method for manufacturing the same, a display panel, and a display device, which can solve the problem of poor performance of TFT in the related art. The technical solution is as follows:

[0005] In one aspect, a thin film transistor is provided, comprising:

[0006] an active layer located on one side of the substrate base;

[0007] A source and a drain electrode located on a side of the active layer away from the substrate;

[0008] And, an oxygen supplement layer including metal oxide is located on the side of the active layer away from the substrate, the orthographic projection of the oxygen supplement layer on the substrate at least partially overlaps with the orthographic projection of the target part of the active layer on the substrate, and the orthographic projection of the target part on the substrate does not overlap with the orthographic projection of the source and drain on the substrate.

[0009] Optionally, the orthographic projection of the oxygen supplementing layer on the base substrate covers the orthographic projection of the target portion on the base substrate.

[0010] Optionally, the thin film transistor further includes: a first gate, a first insulating layer and a second insulating layer;

[0011] The first gate, the first insulating layer, the active layer, the source and drain electrodes, the second insulating layer and the oxygen supplementing layer are stacked in sequence along a direction away from the base substrate.

[0012] Optionally, the thin film transistor further includes: a second gate;

[0013] The second gate is located on a side of the oxygen supplementing layer away from the base substrate, and an orthographic projection of the second gate on the base substrate at least partially overlaps with an orthographic projection of the target portion on the base substrate.

[0014] Optionally, the thin film transistor further includes: at least one of a first buffer layer and a second buffer layer;

[0015] The first buffer layer is located on a side of the second gate away from the oxygen supplement layer;

[0016] The second buffer layer is located between the second gate and the oxygen supplement layer.

[0017] Optionally, the thin film transistor further includes: a third insulating layer and a connecting electrode;

[0018] The third insulating layer is located on a side of the second gate away from the base substrate, and the connecting electrode is located on a side of the third insulating layer away from the base substrate;

[0019] Wherein, the second gate is electrically connected to the source and drain or the first gate through the connecting electrode.

[0020] Optionally, the thin film transistor further includes: a first gate, a first insulating layer and a second insulating layer;

[0021] The active layer, the first insulating layer, the oxygen supplementing layer, the first gate, the second insulating layer, and the source and drain are stacked in sequence along a direction away from the base substrate.

[0022] Optionally, the thin film transistor further includes: a blocking layer and a third insulating layer;

[0023] The shielding layer is located on a side of the active layer close to the substrate, and the third insulating layer is located between the shielding layer and the active layer;

[0024] The orthographic projection of the shielding layer on the base substrate covers the orthographic projection of the active layer on the base substrate.

[0025] Optionally, the thin film transistor further includes: at least one of a first buffer layer and a second buffer layer;

[0026] The first buffer layer is located on a side of the first gate away from the oxygen supplement layer;

[0027] The second buffer layer is located between the first gate and the oxygen supplement layer.

[0028] Optionally, the material of the active layer includes: at least one of indium gallium zinc oxide, indium gallium zinc tin oxide, indium tin oxide, indium zinc oxide and indium tin zinc oxide;

[0029] The material of the oxygen supplement layer includes: at least one of indium gallium zinc oxide, indium gallium zinc tin oxide, indium tin oxide, indium zinc oxide, indium tin zinc oxide, molybdenum oxide, aluminum oxide, copper oxide, indium oxide, tin oxide, zinc oxide and nickel oxide.

[0030] In another aspect, a method for preparing a thin film transistor is provided, the method comprising:

[0031] An active layer, a source / drain electrode and an oxygen supplementing layer are formed on one side of the substrate;

[0032] Wherein, the source and drain electrodes are located on a side of the active layer away from the substrate, the oxygen supplement layer is located on a side of the active layer away from the substrate, and the oxygen supplement layer comprises a metal oxide;

[0033] The orthographic projection of the oxygen supplementing layer on the base substrate at least partially overlaps with the orthographic projection of the target portion of the active layer on the base substrate, and the orthographic projection of the target portion on the base substrate does not overlap with the orthographic projection of the source and drain on the base substrate.

[0034] Optionally, forming an oxygen supplement layer on one side of the substrate includes:

[0035] In the process of depositing the metal material on one side of the substrate, oxygen is introduced into the reaction chamber to form a metal oxide film on the side of the active layer away from the substrate;

[0036] Performing patterning on the metal oxide film to obtain an oxygen replenishing layer;

[0037] In the process of introducing oxygen into the reaction chamber, the oxygen can diffuse to the target portion.

[0038] In yet another aspect, a display panel is provided, comprising: a base substrate, and a plurality of thin film transistors as described above located on the base substrate.

[0039] In another aspect, a display device is provided, comprising: a power supply component and the display panel as described in the above aspect;

[0040] The power supply component is used to supply power to the display panel.

[0041] The beneficial effects of the technical solution provided by this application include at least:

[0042] The present application provides a thin film transistor and a method for preparing the same, a display panel, and a display device. The thin film transistor includes an active layer, a source and drain electrode, and an oxygen supplement layer. Since the orthographic projection of the oxygen supplement layer on the substrate at least partially overlaps with the orthographic projection of the target portion of the active layer on the substrate, the oxygen introduced during the preparation of the oxygen supplement layer included in the thin film transistor can diffuse to the target portion of the active layer, thereby reducing defects in the target portion of the active layer, and the performance of the thin film transistor is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0044] Figure 1 This is a schematic diagram of the relationship between current and voltage provided in an embodiment of the present application;

[0045] Figure 2 is another schematic diagram of the relationship between current and voltage provided in an embodiment of the present application;

[0046] Figure 3 is a schematic structural diagram of a thin film transistor provided in an embodiment of the present application;

[0047] Figure 4 is a schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application;

[0048] Figure 5 is a schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application;

[0049] Figure 6 is a schematic structural diagram of another thin film transistor provided in an embodiment of the present application;

[0050] Figure 7 is a schematic structural diagram of another thin film transistor provided in an embodiment of the present application;

[0051] Figure 8 is a schematic structural diagram of another thin film transistor provided in an embodiment of the present application;

[0052] Fig. 9 is a schematic structural diagram of another thin film transistor provided in an embodiment of the present application;

[0053] Fig.10 is a schematic structural diagram of another thin film transistor provided in an embodiment of the present application;

[0054] Fig.11is a schematic structural diagram of another thin film transistor provided in an embodiment of the present application;

[0055] Fig.12 is a schematic structural diagram of another thin film transistor provided in an embodiment of the present application;

[0056] Fig.13 is a schematic structural diagram of another thin film transistor provided in an embodiment of the present application;

[0057] Fig.14 is a schematic structural diagram of another thin film transistor provided in an embodiment of the present application;

[0058] Fig.15 is a flow chart of a method for preparing a thin film transistor provided in an embodiment of the present application;

[0059] Fig.16 is a flow chart of another method for preparing a thin film transistor provided in an embodiment of the present application;

[0060] Fig.17 is a schematic diagram of forming a first gate provided by an embodiment of the present application;

[0061] Fig.18 is a schematic diagram of forming a first insulating layer provided by an embodiment of the present application;

[0062] Fig.19 is a schematic diagram of forming an active layer provided in an embodiment of the present application;

[0063] Fig. 20 is a schematic diagram of forming a source, drain and a second insulating layer provided by an embodiment of the present application;

[0064] Fig.21 is a structural schematic diagram of a display panel provided in an embodiment of the present application;

[0065] Fig. 22 is a schematic diagram of the structure of another display panel provided in an embodiment of the present application;

[0066] Fig.23 It is a structural schematic diagram of a display device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0067] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below with reference to the accompanying drawings.

[0068] The mobility and refresh rate of traditional amorphous silicon (a-Si) TFT (the active layer material is a-Si) are low, which makes it difficult to meet the requirements of larger-sized television (TV) products. Metal oxide TFT (the active layer material is metal oxide) has the advantages of high mobility, uniform device performance, suitable for large-area production, low preparation temperature, suitable for flexible display, and transparent display. Therefore, metal oxide is considered to be the most promising material to replace a-Si and become the active layer material of TFT.

[0069] Metal oxide TFT is a new type of TFT, which can be applied to liquid crystal display (LCD), organic light-emitting diode (OLED) display, X-ray transducer, mini LED display, quantum dot light emitting diode (QLED) display and low temperature polycrystalline oxide technology (LTPO), etc.

[0070] When the metal oxide TFT is used in a display panel, it can be located in an array substrate, which is a component in the display panel and is used to control the display panel. Depending on the type of display panel, the display panel may also include other components. For example, when the display panel is a liquid crystal display panel, the liquid crystal display panel may also include a liquid crystal layer and a color film substrate. When the display panel is an organic light emitting diode display panel, the organic light emitting diode display panel may also include an organic light emitting diode.

[0071] Existing metal oxide TFTs are relatively sensitive, and the threshold voltage has a negative bias phenomenon. The positive bias temperature stress (PBTS) of the metal oxide TFT is unstable. Moreover, when affected by light, the negative bias temperature illumination stress (NBTIS) of the metal oxide TFT will also have a significant impact, resulting in poor performance of the metal oxide TFT.

[0072] At present, the number of masks required for the preparation of metal oxide TFTs is relatively small, which can reduce the number of steps in the preparation process, thereby saving production costs and increasing production capacity. However, the side of the active layer away from the substrate is easily affected by the etchant (the etchant that etches the metal material to obtain the source and drain electrodes) and produces defects. The active layer needs to be oxygenated to reduce the defects of the active layer.

[0073] It should be noted that defects on the side of the active layer away from the substrate may lead to poor switching performance of the metal oxide TFT. The switching performance of the metal oxide TFT can be measured by the difference between the current in the on state and the current in the off state. If the difference between the current in the on state and the current in the off state is small, the switching performance of the metal oxide TFT is poor; if the difference between the current in the on state and the current in the off state is large, the switching performance of the metal oxide TFT is good.

[0074] refer to Figure 1 , the side of the active layer away from the substrate has defects, and the side of the active layer away from the substrate is not supplemented with oxygen. When the metal oxide TFT is in the off state (such as the applied voltage is less than a certain threshold voltage), there is a certain amount of current in each area of ​​the active layer, and the current in different areas is quite different (for example, the ordinate of each curve in the figure represents the current of a region at different voltages). This may result in a small difference between the current in the on state and the current in the off state of the metal oxide TFT, and the switching performance of the metal oxide TFT is poor.

[0075] Alternatively, refer to Figure 2 , the side of the active layer away from the substrate has defects, and oxygen is supplemented on the side of the active layer away from the substrate. When the metal oxide TFT is in the off state (such as the applied voltage is less than a certain threshold voltage), the current in each area of ​​the active layer is small (for example, 0); when the metal oxide TFT is in the on state (such as the applied voltage gradually increases to the threshold voltage), the current in each area of ​​the active layer gradually increases and tends to be stable. As a result, the difference between the current in the on state and the current in the off state of the metal oxide TFT can be large, and the current difference in each area at the same voltage is small, and the switching performance of the metal oxide TFT is good.

[0076] In the embodiment of the present application, an oxygen replenishing layer is added to the metal oxide TFT so that the oxygen introduced during the preparation of the oxygen replenishing layer can diffuse into the active layer, thereby improving the stability of the PBTS of the metal oxide TFT and ensuring the performance of the metal oxide TFT.

[0077] Figure 3 is a schematic diagram of the structure of a thin film transistor provided in an embodiment of the present application. Figure 3It can be seen that the thin film transistor 10 may include: an active layer 101, a source and drain electrode 102, and an oxygen supplement layer 103 located on a base substrate 20. The source and drain electrode 102 are located on a side of the active layer 101 away from the base substrate 20, the oxygen supplement layer 103 is located on a side of the active layer 101 away from the base substrate 20, and the oxygen supplement layer 103 includes a metal oxide.

[0078] The orthographic projection of the oxygen supplementing layer 103 on the base substrate 20 at least partially overlaps with the orthographic projection of the target portion 101a of the active layer 101 on the base substrate 20 , and the orthographic projection of the target portion 101a on the base substrate 20 does not overlap with the orthographic projection of the source and drain 102 on the base substrate 20 .

[0079] Since the orthographic projection of the target portion 101a of the active layer 101 on the base substrate 20 does not overlap with the orthographic projection of the source and drain electrodes 102 on the base substrate 20, when the metal material is etched with an etchant to form the source and drain electrodes 102, the target portion 101a of the active layer 101 is more susceptible to the influence of the etchant and produces defects than other portions of the active layer 101. Therefore, in order to ensure the performance of the thin film transistor, it is necessary to supplement oxygen to the target portion 101a to improve the oxygen vacancy defects of the target portion 101a of the active layer 101.

[0080] In an embodiment of the present application, each film layer of the thin film transistor can be prepared in a reaction chamber. Since the oxygen replenishing layer 103 includes a metal oxide, when preparing the oxygen replenishing layer 103, it is necessary to introduce oxygen into the reaction chamber simultaneously during the process of depositing the metal material. In addition, the oxygen replenishing layer 103 is located on the side of the active layer 101 away from the base substrate 20, so the active layer 101 can be prepared before the oxygen replenishing layer 103. Thus, when the orthographic projection of the oxygen replenishing layer 103 on the base substrate 20 overlaps at least partially with the orthographic projection of the target portion 101a of the active layer 101 on the base substrate 20, the oxygen introduced into the reaction chamber when preparing the oxygen replenishing layer 103 can be diffused to the target portion 101a of the active layer 101, thereby reducing the oxygen vacancy defects in the target portion 101a of the active layer 101, and the performance of the thin film transistor 10 is better.

[0081] In summary, the embodiment of the present application provides a thin film transistor, which includes an active layer, a source and drain electrode, and an oxygen supplement layer. Since the orthographic projection of the oxygen supplement layer on the substrate at least partially overlaps with the orthographic projection of the target portion of the active layer on the substrate, the oxygen introduced when preparing the oxygen supplement layer included in the thin film transistor can diffuse to the target portion of the active layer, thereby reducing defects in the target portion of the active layer, and the performance of the thin film transistor is better.

[0082] In the embodiment of the present application, the oxygen supplement layer 103 can be prepared from a metal oxide material. For example, the material of the oxygen supplement layer 103 can include: indium gallium zinc oxide (IGZO), indium gallium zinc tin oxide (IGZTO), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), molybdenum oxide (MoO), aluminum oxide (AlO), copper oxide (CuO), indium oxide (InO), tin oxide (SnO), zinc oxide (ZnO) and nickel oxide (NiO) at least one.

[0083] In the embodiment of the present application, the active layer 101 can be made of a metal oxide material. For example, the material of the active layer 101 can include one metal oxide or multiple metal oxides. The material of the active layer 101 includes at least one of IGZO, IGZTO, ITO, IZO and ITZO.

[0084] Furthermore, the oxygen content in the active layer 101 can be controlled by the content of oxygen introduced into the reaction chamber when preparing the active layer 101. The oxygen content in the active layer 101 is positively correlated with the content of oxygen introduced during preparation. That is, the more oxygen introduced during preparation, the higher the oxygen content in the active layer 101 after preparation; the less oxygen introduced during preparation, the lower the oxygen content in the active layer 101 after preparation. The crystalline state of the active layer 101 can be a crystalline state or a non-crystalline state, and the embodiment of the present application does not limit the crystalline state of the active layer 101.

[0085] Optionally, the active layer 101 may include a single layer of metal oxide or multiple layers of metal oxide. In the case where the active layer 101 includes multiple layers of metal oxide, the materials of each layer of metal oxide may be different. Furthermore, the thickness of the active layer 101 may range from 20 nm (nanometer) to 150 nm.

[0086] In the examples of this application, refer to Figure 3 The source-drain electrode 102 may include a source electrode 1021 and a drain electrode 1022 that are spaced apart, and the source electrode 1021 and the drain electrode 1022 may be respectively connected to the active layer 101. The orthographic projection of the target portion 101a on the base substrate 20 does not overlap with the orthographic projection of the source-drain electrode 102 on the base substrate 20, which may mean that the orthographic projection of the target portion 101a on the base substrate 20 does not overlap with the orthographic projection of the source electrode 1021 on the base substrate 20 and the orthographic projection of the drain electrode 1022 on the base substrate 20.

[0087] Optionally, the source and drain electrodes 102 may be made of metal materials. For example, the material of the source and drain electrodes 102 may include pure metal or metal alloy. The material of the source and drain electrodes 102 includes at least one of aluminum (Al), molybdenum (Mo), aluminum neodymium (AlNd), molybdenum alloy (MTD), copper (Cu), and molybdenum neodymium (MoNb). In addition, the thickness of the source and drain electrodes 102 may range from 10 nm to 700 nm.

[0088] The source and drain electrodes 102 may include a layer of metal material or multiple layers of metal material. When the source and drain electrodes 102 include multiple layers of metal material, the metal materials of each layer may be different.

[0089] In the embodiment of the present application, the orthographic projection of the oxygen supplement layer 103 on the base substrate 20 can cover the orthographic projection of the target portion 101a on the base substrate 20. That is, the orthographic projection of the target portion 101a on the base substrate 20 is located within the orthographic projection of the oxygen supplement layer 103 on the base substrate 20.

[0090] Since the orthographic projection of the oxygen replenishing layer 103 on the base substrate 20 covers the orthographic projection of the target portion 101a on the base substrate 20, the oxygen introduced into the reaction chamber when preparing the oxygen replenishing layer 103 can diffuse to a larger area of ​​the target portion 101a, thereby greatly reducing the defects of the target portion 101a and ensuring the performance of the thin film transistor 10.

[0091] As an optional implementation, refer to Figure 4 , the thin film transistor 10 may further include: a first gate 104, a first insulating layer 105 and a second insulating layer 106. The first gate 104, the first insulating layer 105, the active layer 101, the source and drain electrodes 102, the second insulating layer 106 and the oxygen supplement layer 103 may be stacked in sequence in a direction away from the substrate 20. That is, the first insulating layer 105 is located between the first gate 104 and the active layer 101, and is used to insulate the first gate 104 from the active layer 101. The second insulating layer 106 is located between the source and drain electrodes 102 and the oxygen supplement layer 103, and is used to insulate the source and drain electrodes 102 from the oxygen supplement layer 103.

[0092] Optionally, the first gate 104 can be made of a metal material. For example, the material of the first gate 104 can include a pure metal or a metal alloy. The material of the first gate 104 includes at least one of aluminum (Al), molybdenum (Mo), aluminum neodymium (AlNd), molybdenum alloy (MTD), copper (Cu), molybdenum neodymium (MoNb) and titanium (Ti). In addition, the thickness of the first gate 104 can range from 10 nm (nanometer) to 700 nm.

[0093] The first insulating layer 105 may also be referred to as a gate insulating layer (GI), and the material of the first insulating layer 105 includes at least one of silicon oxide (SiO), silicon oxynitride (SiON) and silicon nitride (SiN). The thickness of the first insulating layer 105 ranges from 10 nm to 700 nm.

[0094] The second insulating layer 106 may also be referred to as a first passivation layer (PVX), and the material of the second insulating layer 106 includes at least one of SiO, SiON and SiN. The thickness of the second insulating layer 106 ranges from 10 nm to 700 nm.

[0095] In the embodiment of the present application, since the first gate 104 is located on the side of the active layer 101 close to the base substrate 20, the first gate 104 can be used to block the light from the side of the first gate 104 close to the base substrate 20, thereby reducing the influence of the light on the target portion 101a of the active layer 101 on the side of the first gate 104 away from the base substrate 20, and the performance of the thin film transistor is better.

[0096] Figure 5 is a schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application. Figure 5 The thin film transistor 10 may further include: a second gate 107. The second gate 107 may be located on a side of the oxygen supplementing layer 103 away from the base substrate 20, and the orthographic projection of the second gate 107 on the base substrate 20 at least partially overlaps with the orthographic projection of the target portion 101a on the base substrate 20.

[0097] In an embodiment of the present application, the second gate 107 can be made of a metal material. Optionally, the material of the second gate 107 can be a pure metal or a metal alloy. For example, the material of the second gate 107 may include at least one of Al, Mo, AlNd, MTD, Cu, MoNb and Ti. Among them, the material of the second gate 107 may be the same as the material of the first gate 104, or may be different, and the embodiment of the present application does not limit this. In addition, since the second gate 107 is made of a metal material, the second gate 107 can be used for conduction (for example, transmitting signals). In addition, the thickness of the second gate 107 can range from 10nm to 700nm.

[0098] Since the material of the second gate 107 includes a metal material, light will not pass through the second gate 107. By providing the second gate 107, light from the side of the second gate 107 away from the base substrate 20 can be shielded, and the influence of light on the target portion 101a of the active layer 101 on the side of the second gate 107 close to the base substrate 20 is reduced, and the performance of the thin film transistor 10 is better.

[0099] In the embodiment of the present application, the thin film transistor 10 may further include: at least one of a first buffer layer 108 and a second buffer layer 109. The first buffer layer 108 may be located on a side of the second gate 107 away from the oxygen supplement layer 103, and the second buffer layer 109 may be located between the second gate 107 and the oxygen supplement layer 103.

[0100] By providing the first buffer layer 108 or the second buffer layer 109 , it is possible to prevent other film layers from corroding the second gate 107 , thereby ensuring the quality of the second gate 107 and the performance of the thin film transistor.

[0101] Example, reference Figure 6 , the thin film transistor 10 only includes the first buffer layer 108. Alternatively, referring to Figure 7 , the thin film transistor 10 only includes the second buffer layer 109. Alternatively, referring to Figure 8 The thin film transistor 10 includes a first buffer layer 108 and a second buffer layer 109 .

[0102] In the embodiment of the present application, the oxygen supplement layer 103, the second gate 107, the first buffer layer 108 and the second buffer layer 109 can be prepared by using the same mask. The first buffer layer 108 and the second buffer layer 109 can be prepared by using insulating materials. The thickness of the first buffer layer 108 and the second buffer layer 109 are both in the range of 10nm to 100nm.

[0103] Optionally, the sheet resistance of the oxygen supplementing layer 103 may be greater than the sheet resistance of the first buffer layer 108 and greater than the sheet resistance of the second buffer layer 109 . Furthermore, the sheet resistance of the first buffer layer 108 and the sheet resistance of the second buffer layer 109 are both greater than the sheet resistance of the second gate 107 .

[0104] Fig. 9 is a schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application. Fig. 9 It can be seen that the thin film transistor 10 may further include: a third insulating layer 110 and a connecting electrode 111 .

[0105] The third insulating layer 110 may be located on a side of the second gate 107 away from the base substrate 20, and the connecting electrode 111 may be located on a side of the third insulating layer 110 away from the base substrate 20. The second gate 107 may be electrically connected to the source and drain electrodes 102 or the first gate 104 through the connecting electrode 111. The connecting electrode 111 may be made of a transparent material, for example, may be made of ITO.

[0106] Optionally, the second gate 107 may be connected to the first gate 104, or may be connected to the source 1021, or may be connected to the drain 1022. If the second gate 107 is connected to the first gate 104, the signal in the second gate 107 may be the same as the signal in the first gate 104. If the second gate 107 is connected to the source 1021, the signal in the second gate 107 may be the same as the signal in the source 1021. If the second gate 107 is connected to the drain 1022, the signal in the second gate 107 may be the same as the signal in the drain 1022.

[0107] Of course, the second gate 107 may not be connected to the first gate 104, the source 1021, and the drain 1022. In this case, the signal of the second gate 107 is different from the signal of the first gate 104, the signal of the source 1021, and the signal of the drain 1022. Alternatively, the second gate 107 may not transmit any signal and only play the role of shielding light.

[0108] Example, reference Fig. 9 The thin film transistor 10 is not provided with the first buffer layer 108 and the second buffer layer 109, one end of the connecting electrode 111 is connected to the second gate electrode 107 through the first via hole in the third insulating layer 110, and the other end is connected to the source electrode 1021 through the second via hole in the second insulating layer 106 and the third via hole in the third insulating layer 110. The orthographic projection of the second via hole on the base substrate 20 at least partially overlaps with the orthographic projection of the third via hole on the base substrate 20.

[0109] If the thin film transistor 10 is provided with a first buffer layer 108 and a second buffer layer 109, the second gate 107 may also be electrically connected to the source / drain 102 or the first gate 104 through the connecting electrode 111. If the thin film transistor 10 is provided with only the second buffer layer 109 and the first buffer layer 108 is not provided, the connection method between the connecting electrode 111 and the second gate 107 may refer to the above-mentioned connection method without the first buffer layer 108 and the second buffer layer 109.

[0110] Assuming that the thin film transistor 10 is provided with a first buffer layer 108, one end of the connecting electrode 111 can be connected to the second gate 107 through the fourth via hole of the first buffer layer 108 and the first via hole in the third insulating layer 110, and the other end is connected to the source 1021 through the second via hole of the second insulating layer 106 and the third via hole in the third insulating layer 110. The orthographic projection of the fourth via hole on the base substrate 20 at least partially overlaps with the orthographic projection of the first via hole on the base substrate 20.

[0111] In the embodiment of the present application, the third insulating layer 110 may also be referred to as a second passivation layer, and the material of the third insulating layer 110 includes at least one of silicon dioxide (SiO2) and SiON. The thickness of the third insulating layer 110 ranges from 10 nm to 700 nm.

[0112] As another optional implementation, refer to Fig.10 , the thin film transistor 10 may further include: a first gate electrode 104, a first insulating layer 105 and a second insulating layer 106. The active layer 101, the first insulating layer 105, the oxygen-compensating layer 103, the first gate electrode 104, the second insulating layer 106 and the source-drain electrode 102 are sequentially stacked in a direction away from the base substrate 20. That is, the first insulating layer 105 is located between the active layer 101 and the oxygen-compensating layer 103, and is used to insulate the active layer 101 from the oxygen-compensating layer 103. The second insulating layer 106 is located between the first gate electrode 104 and the source-drain electrode 102, and is used to insulate the first gate electrode 104 from the source-drain electrode 102.

[0113] In the embodiment of the present application, since the first gate 104 is located on the side of the active layer 101 away from the base substrate 20, the first gate 104 can be used to block the light from the side of the first gate 104 away from the base substrate 20, thereby reducing the influence of the light on the target portion 101a of the active layer 101 on the side of the first gate 104 close to the base substrate 20, and the performance of the thin film transistor 10 is better.

[0114] Optionally, the first gate 104 can be made of a metal material. For example, the material of the first gate 104 can include a pure metal or a metal alloy. The material of the first gate 104 includes at least one of Al, molybdenum (Mo), AlNd, MTD, Cu, MoNb and Ti. In addition, the thickness of the first gate 104 can range from 10 nm to 700 nm.

[0115] The first insulating layer 105 may also be referred to as a gate insulating layer, and the material of the first insulating layer 105 includes at least one of SiO, SiON and SiN. The thickness of the first insulating layer 105 is in a range of 10 nm to 700 nm.

[0116] The second insulating layer 106 may also be referred to as a first passivation layer, and the material of the second insulating layer 106 includes at least one of SiO, SiON and SiN. The thickness of the second insulating layer 106 is in a range of 10 nm to 700 nm.

[0117] Fig.11 is a schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application. Fig.11 The thin film transistor 10 may further include: a shielding layer 112 and a third insulating layer 110. The shielding layer 112 may be located on a side of the active layer 101 close to the base substrate 20, and the third insulating layer 110 may be located between the shielding layer 112 and the active layer 101. The orthographic projection of the shielding layer 112 on the base substrate 20 covers the orthographic projection of the active layer 101 on the base substrate 20.

[0118] In the embodiment of the present application, the shielding layer 112 can be made of a metal material. Optionally, the material of the shielding layer 112 can be a pure metal or a metal alloy. For example, the material of the second gate 107 can include at least one of Al, Mo, AlNd, MTD, Cu, MoNb and Ti.

[0119] Since the shielding layer 112 is made of metal material, light will not pass through the shielding layer 112. By providing the shielding layer 112, light from the side of the shielding layer 112 close to the base substrate 20 can be shielded, and the influence of light on the target portion 101a of the active layer 101 on the side of the shielding layer 112 far from the base substrate 20 can be reduced, and the performance of the thin film transistor 10 is better.

[0120] In an embodiment of the present application, the shielding layer 112 may also be made of a metal material or other shading material. If the shielding layer 112 is made of a metal material, the shielding layer 112 may also be conductive (transmit signals). Thus, the shielding layer 112 may also be electrically connected to the source and drain 102 or the first gate 104 through a connecting electrode. Optionally, the shielding layer 112 may be connected to the first gate 104, or may be connected to the source 1021, or may be connected to the drain 1022. If the shielding layer 112 is connected to the first gate 104, the signal in the shielding layer 112 may be the same as the signal in the first gate 104. If the shielding layer 112 is connected to the source 1021, the signal in the shielding layer 112 may be the same as the signal in the source 1021. If the shielding layer 112 is connected to the drain 1022, the signal in the shielding layer 112 may be the same as the signal in the drain 1022.

[0121] Of course, the shielding layer 112 may not be connected to the first gate 104, the source 1021 and the drain 1022. In this case, the shielding layer 112 may only play the role of shielding light.

[0122] In the embodiment of the present application, the thin film transistor 10 may further include: at least one of a first buffer layer 108 and a second buffer layer 109. The first buffer layer 108 may be located on a side of the first gate 104 away from the oxygen supplement layer 103, and the second buffer layer 109 may be located between the first gate 104 and the oxygen supplement layer 103.

[0123] By providing the first buffer layer 108 or the second buffer layer 109 , it is possible to prevent other film layers from corroding the first gate 104 , thereby ensuring the quality of the first gate 104 and the performance of the thin film transistor.

[0124] Example, reference Fig.12 , the thin film transistor only includes the first buffer layer 108. Alternatively, referring to Fig.13 , the thin film transistor only includes the second buffer layer 109. Alternatively, referring to Fig.14 The thin film transistor includes a first buffer layer 108 and a second buffer layer 109 .

[0125] Optionally, the sheet resistance of the oxygen supplementing layer 103 may be greater than the sheet resistance of the first buffer layer 108 and greater than the sheet resistance of the second buffer layer 109 . Furthermore, the sheet resistance of the first buffer layer 108 and the sheet resistance of the second buffer layer 109 are both greater than the sheet resistance of the second gate 107 .

[0126] In the above two embodiments, both sides of the active layer 101 are provided with film layers for shielding light. Figures 5 to 9 ), the two sides of the active layer 101 are respectively the first gate 104 and the second gate 107. Figures 11 to 14 ), the two sides of the active layer 101 are respectively the first gate 104 and the shielding layer 112. In this way, the influence of light on the active layer can be avoided, and the light stability of the thin film transistor 10 is better.

[0127] Table 1

[0128]

[0129] Referring to Table 1 above, the threshold voltage of the solution of the embodiment of the present application is -0.3V (volts), and the threshold voltage of the solution of the prior art is -2.0V. That is, the solution of the embodiment of the present application can improve the negative bias of the characteristics compared with the prior art. The mobility of the solution of the embodiment of the present application is 22cm 2 / V·s (square centimeter / volt·second), the mobility of the prior art solution is 16cm 2 / V·s. That is, the mobility of the solution of the embodiment of the present application is greater than that of the prior art. The subthreshold swing (SS) of the solution of the embodiment of the present application is 0.20, and the subthreshold swing of the solution of the prior art is 0.28. That is, the subthreshold swing of the solution of the embodiment of the present application is smaller than that of the prior art. The current of the solution of the embodiment of the present application is 4.3μA (microamperes), and the current of the solution of the prior art is 24.8μA. That is, the current of the solution of the embodiment of the present application is greater than that of the prior art. Among them, the subthreshold swing is a performance indicator that measures the mutual conversion rate between the on and off states of the thin film transistor, and is used to indicate the speed at which the current flowing through the thin film transistor increases after the thin film transistor is turned on.

[0130] Furthermore, according to Table 1 above, it can be seen that the solution provided in the embodiment of the present application can improve the negative bias of the characteristics, increase the mobility, reduce the subthreshold swing, and the performance of the thin film transistor is better by providing a light-shielding film layer on both sides of the active layer.

[0131] In summary, the embodiment of the present application provides a thin film transistor, which includes an active layer, a source and drain electrode, and an oxygen supplement layer. Since the orthographic projection of the oxygen supplement layer on the substrate at least partially overlaps with the orthographic projection of the target portion of the active layer on the substrate, the oxygen introduced when preparing the oxygen supplement layer included in the thin film transistor can diffuse to the target portion of the active layer, thereby reducing defects in the target portion of the active layer, and the performance of the thin film transistor is better.

[0132] Fig.15 is a flow chart of a method for preparing a thin film transistor provided in an embodiment of the present application. The method can be used to prepare the thin film transistor 10 provided in the above embodiment. Fig.15 It can be seen that the method may include:

[0133] Step 301: forming an active layer on one side of a substrate.

[0134] In the embodiment of the present application, an active layer thin film is first formed on one side of the substrate, and the active layer thin film is patterned to obtain an active layer. The patterning process may include: photoresist (PR) coating, exposure, development, etching and photoresist stripping.

[0135] Step 302: forming source and drain electrodes on a side of the active layer away from the substrate.

[0136] In the embodiment of the present application, a source-drain metal film can be first formed on the side of the active layer away from the substrate, and the source-drain metal film can be patterned to obtain the source-drain electrode. In the patterning process, an etchant can be used to etch the source-drain metal film. The source-drain electrode includes a source electrode and a drain electrode, and the source electrode and the drain electrode are respectively connected to the active layer.

[0137] Step 303: forming an oxygen supplementing layer on a side of the active layer away from the substrate.

[0138] In the embodiment of the present application, a metal oxide film may be formed on a side of the active layer 101 away from the base substrate 20, and the metal oxide film may be patterned to obtain an oxygen supplement layer 103. The orthographic projection of the oxygen supplement layer 103 on the base substrate 20 at least partially overlaps with the orthographic projection of the target portion 101a of the active layer 101 on the base substrate 20, and the orthographic projection of the target portion 101a on the base substrate 20 does not overlap with the orthographic projection of the source and drain electrodes 102 on the base substrate 20.

[0139] Since the orthographic projection of the target portion 101a of the active layer 101 on the base substrate 20 does not overlap with the orthographic projection of the source and drain electrodes 102 on the base substrate 20, when the metal material is etched with an etchant to form the source and drain electrodes 102, the target portion 101a of the active layer 101 is more susceptible to the influence of the etchant and produces defects than other portions of the active layer 101. Therefore, in order to ensure the performance of the thin film transistor, it is necessary to supplement oxygen to the target portion 101a to improve the defects of the target portion 101a of the active layer 101.

[0140] In the embodiment of the present application, each film layer of the thin film transistor can be formed in a reaction chamber. Since the oxygen supplement layer 103 includes a metal oxide, when preparing the oxygen supplement layer 103, it is necessary to introduce oxygen into the reflection chamber at the same time during the process of depositing the metal material on one side of the base substrate 20 to obtain a metal oxide film. In addition, the oxygen supplement layer 103 is located on the side of the active layer 101 away from the base substrate 20, so the active layer 101 can be prepared before the oxygen supplement layer 103. Thus, when the orthographic projection of the oxygen supplement layer 103 on the base substrate 20 overlaps at least partially with the orthographic projection of the target portion 101a of the active layer 101 on the base substrate 20, the oxygen introduced when preparing the oxygen supplement layer 103 can be diffused to the target portion 101a of the active layer 101, thereby reducing the defects of the target portion 101a in the active layer 101, and the performance of the thin film transistor 10 is better.

[0141] In summary, the embodiment of the present application provides a method for preparing a thin film transistor, wherein the prepared thin film transistor includes an active layer, a source and drain electrode, and an oxygen supplement layer. Since the orthographic projection of the oxygen supplement layer on the substrate at least partially overlaps with the orthographic projection of the target portion of the active layer on the substrate, the oxygen introduced when preparing the oxygen supplement layer included in the thin film transistor can diffuse to the target portion of the active layer, thereby reducing defects in the target portion of the active layer, and the performance of the thin film transistor is better.

[0142] Fig.16 is a flow chart of another method for preparing a thin film transistor provided in an embodiment of the present application. The method can be used to prepare Figure 5 The thin film transistor 10 is shown. Fig.16 It can be seen that the method may include:

[0143] Step 401: Form a first gate on one side of a substrate.

[0144] In the examples of this application, refer to Fig.17 A first gate film can be formed on one side of the substrate by sputtering, and the first gate film is patterned to obtain an active layer. The patterning process may include photoresist coating, exposure, development, etching, photoresist stripping and other processes.

[0145] The deposition method may be one of the following methods: physical vapor deposition (PVD), pulsed laser deposition (PLD) and metal organic chemical vapor deposition (MOCVD).

[0146] Step 402: forming a first insulating layer on a side of the first gate away from the substrate.

[0147] In the examples of this application, refer to Fig.18 The first insulating layer may be formed on a side of the first gate away from the substrate by chemical vapor deposition (CVD).

[0148] Step 403: forming an active layer on a side of the first insulating layer away from the first gate.

[0149] In the examples of this application, refer to Fig.19 An active layer thin film may be first formed on one side of the base substrate 20 , and the active layer thin film may be patterned to obtain the active layer 101 .

[0150] Step 404: forming a source and a drain on a side of the active layer away from the first insulating layer.

[0151] In the examples of this application, refer to Fig. 20 A source-drain metal film can be formed on one side of the active layer 101 by sputtering deposition, and the source-drain metal film can be patterned to obtain a source-drain electrode.

[0152] The deposition method may be one of the following methods: PVD, PLD and MOCVD.

[0153] Step 405 : forming a second insulating layer on a side of the source and drain electrodes away from the active layer.

[0154] In the examples of this application, refer to Fig. 20 The second insulating layer 106 may be formed on the side of the source and drain electrodes 102 away from the active layer 101 by CVD.

[0155] Step 406: forming an oxygen supplement layer on a side of the second insulating layer away from the source and drain electrodes.

[0156] In the examples of this application, refer to Figure 5 A metal oxide film may be formed on a side of the second insulating layer 106 away from the source and drain electrodes 102 , and the metal oxide film may be patterned to obtain an oxygen supplement layer.

[0157] In the process of forming the metal oxide film, a metal material may be deposited on a side of the second insulating layer 106 away from the source and drain electrodes, and oxygen may be introduced into the reaction chamber during the process of depositing the metal material, thereby forming the metal oxide film.

[0158] Furthermore, the active layer 101 is prepared before the oxygen replenishing layer 103 , so that the oxygen introduced when preparing the oxygen replenishing layer 103 can diffuse to the target portion 101 a of the active layer 101 , thereby reducing defects in the target portion 101 a of the active layer 101 , and the performance of the thin film transistor 10 is better.

[0159] Optionally, when forming the metal oxide film of the oxygen replenishing layer 103, only oxygen may be introduced into the reaction chamber. Alternatively, when forming the metal oxide film of the oxygen replenishing layer 103, in addition to introducing oxygen into the reaction chamber, other gases, such as argon (Ar), may also be introduced into the reaction chamber, which is not limited in the embodiments of the present application.

[0160] Step 407 : forming a second gate on a side of the oxygen supplementing layer away from the second insulating layer.

[0161] In the examples of this application, refer to Figure 5A second gate film may be formed on one side of the oxygen supplementing layer 103 by sputtering deposition, and the second gate film may be patterned to obtain a second gate.

[0162] The deposition method may be one of the following methods: PVD, PLD and MOCVD.

[0163] In summary, the embodiment of the present application provides a method for preparing a thin film transistor, wherein the prepared thin film transistor includes an active layer, a source and drain electrode, and an oxygen supplement layer. Since the orthographic projection of the oxygen supplement layer on the substrate at least partially overlaps with the orthographic projection of the target portion of the active layer on the substrate, the oxygen introduced when preparing the oxygen supplement layer included in the thin film transistor can diffuse to the target portion of the active layer, thereby reducing defects in the target portion of the active layer, and the performance of the thin film transistor is better.

[0164] In the embodiments of the present application, Figures 3 to 14 Any method for preparing a thin film transistor in the present invention can be prepared by referring to the method provided in the above embodiments, and the embodiments of the present application will not be described in detail here.

[0165] Fig.21 It is a structural schematic diagram of a display panel provided in an embodiment of the present application. Fig. 22 is a schematic diagram of the structure of another display panel provided in an embodiment of the present application. Fig.21 and Fig. 22 It can be seen that the display panel 01 may include: a base substrate 20 and a thin film transistor 10 provided in the above embodiment and located on the base substrate 20. For example, Fig.21 The thin film transistor shown in FIG. Fig. 9 The thin film transistor 10 is shown. Fig. 22 The thin film transistor shown in FIG. Fig.11 The thin film transistor 10 is shown.

[0166] refer to Fig.21 and Fig. 22 The display panel 01 may further include: a pixel electrode 50 and a common electrode 60. The common electrode 60 may be connected to the drain electrode 1022 through a via hole. The orthographic projection of the pixel electrode 50 on the base substrate does not overlap with the orthographic projection of the active layer 101 of the thin film transistor 10 on the base substrate 20.

[0167] Optionally, the pixel electrode 50 and the common electrode 60 may be made of a transparent material, for example, ITO.

[0168] refer to Fig.21When preparing the display panel 01, the pixel electrode 50 can be formed on the base substrate 20 first, and then the first gate electrode 104, the first insulating layer 105, the active layer 104, the source and drain electrodes 102, the second insulating layer 106, the oxygen supplement layer 103, the second gate electrode 107, the third insulating layer 110, the connecting electrode 111 and the common electrode 60 are formed in sequence. The common electrode 60 can be prepared by the same patterning process as the connecting electrode 111.

[0169] refer to Fig. 22 When preparing the display panel 01, the pixel electrode 50 can be formed on the base substrate first, and then the shielding layer 112, the third insulating layer 110, the active layer 104, the first insulating layer 105, the oxygen supplement layer 103, the first gate 104, the second insulating layer 106, and the source and drain electrodes 102 are formed in sequence. Then, an interlayer dielectric layer (ILD) a is formed on the side of the source and drain electrodes 102 away from the base substrate 20. Finally, a common electrode 60 is formed on the side of the interlayer dielectric layer a away from the base substrate 20.

[0170] Optionally, the positions of the pixel electrode 50 and the common electrode 60 can be swapped. That is, the common electrode 60 is located on one side of the base substrate 20, the pixel electrode 50 is located on the side of the third insulating layer 110 away from the base substrate 20, and the pixel electrode 50 is connected to the drain 1022 through a via hole.

[0171] In summary, the embodiment of the present application provides a display panel, in which a thin film transistor includes an active layer, a source and drain electrode, and an oxygen supplement layer. Since the orthographic projection of the oxygen supplement layer on the base substrate overlaps at least partially with the orthographic projection of the target portion of the active layer on the base substrate, the oxygen introduced when preparing the oxygen supplement layer included in the thin film transistor can diffuse to the target portion of the active layer, thereby reducing defects in the target portion of the active layer, and the performance of the thin film transistor is better.

[0172] Fig.23 is a schematic diagram of the structure of a display device provided in an embodiment of the present application. Fig.23 It can be seen that the display device 00 may include a power supply component 02 and the display panel 01 provided in the above embodiment. The power supply component 02 may be used to supply power to the display panel 01 .

[0173] Optionally, the display device may be an OLED display device, a liquid crystal display device, electronic paper, a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame or a navigator, or any other product or component with a display function.

[0174] The present application also provides an X-ray detector, which may include Figures 3 to 14Any thin film transistor. The X-ray detector may include a substrate, a plurality of detection units arranged on the substrate, and a scintillation layer arranged on the plurality of detection units, each detection unit may include a thin film transistor and a photosensitive structure, the photosensitive structure is arranged on the drain of the thin film transistor and is electrically connected to the thin film transistor, the scintillation layer is used to convert X-rays into visible light, the photosensitive structure is used to convert the visible light into an electrical signal, and the thin film transistor is used as a switch for reading the electrical signal.

[0175] The above description is only an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A thin film transistor, characterized in that: The thin film transistor comprises: an active layer located on one side of the substrate base; A source and a drain electrode located on a side of the active layer away from the substrate; and, an oxygen supplement layer including a metal oxide located on a side of the active layer away from the base substrate, wherein an orthographic projection of the oxygen supplement layer on the base substrate at least partially overlaps with an orthographic projection of a target portion of the active layer on the base substrate, and an orthographic projection of the target portion on the base substrate does not overlap with an orthographic projection of the source and drain electrodes on the base substrate; a first gate, a first insulating layer and a second insulating layer; The first gate, the first insulating layer, the active layer, the source and drain electrodes, the second insulating layer and the oxygen supplementing layer are stacked in sequence in a direction away from the substrate; a second gate, the second gate being located at a side of the oxygen supplementing layer away from the base substrate, and an orthographic projection of the second gate on the base substrate at least partially overlaps with an orthographic projection of the target portion on the base substrate; The thin film transistor further includes: at least one of a first buffer layer and a second buffer layer; the first buffer layer is located on a side of the second gate away from the oxygen supplement layer; and the second buffer layer is located between the second gate and the oxygen supplement layer.

2. The thin film transistor according to claim 1, characterized in that: The orthographic projection of the oxygen supplementing layer on the base substrate covers the orthographic projection of the target portion on the base substrate.

3. The thin film transistor according to claim 1, characterized in that: The thin film transistor further includes: a third insulating layer and a connecting electrode; The third insulating layer is located on a side of the second gate away from the base substrate, and the connecting electrode is located on a side of the third insulating layer away from the base substrate; Wherein, the second gate is electrically connected to the source and drain or the first gate through the connecting electrode.

4. The thin film transistor according to claim 1 or 2, characterized in that: The material of the active layer includes: at least one of indium gallium zinc oxide, indium gallium zinc tin oxide, indium tin oxide, indium zinc oxide and indium tin zinc oxide; The material of the oxygen supplement layer includes: at least one of indium gallium zinc oxide, indium gallium zinc tin oxide, indium tin oxide, indium zinc oxide, indium tin zinc oxide, molybdenum oxide, aluminum oxide, copper oxide, indium oxide, tin oxide, zinc oxide and nickel oxide.

5. A thin film transistor, characterized in that: The thin film transistor comprises: an active layer located on one side of the substrate base; A source and a drain electrode located on a side of the active layer away from the substrate; and, an oxygen supplement layer including a metal oxide located on a side of the active layer away from the base substrate, wherein an orthographic projection of the oxygen supplement layer on the base substrate at least partially overlaps with an orthographic projection of a target portion of the active layer on the base substrate, and an orthographic projection of the target portion on the base substrate does not overlap with an orthographic projection of the source and drain electrodes on the base substrate; a first gate, a first insulating layer and a second insulating layer; The active layer, the first insulating layer, the oxygen supplementing layer, the first gate, the second insulating layer, and the source and drain are stacked in sequence in a direction away from the substrate; a shielding layer and a third insulating layer, wherein the shielding layer is located on a side of the active layer close to the base substrate, and the third insulating layer is located between the shielding layer and the active layer, and the orthographic projection of the shielding layer on the base substrate covers the orthographic projection of the active layer on the base substrate; The thin film transistor further includes: at least one of a first buffer layer and a second buffer layer; the first buffer layer is located on a side of the first gate away from the oxygen supplement layer; and the second buffer layer is located between the first gate and the oxygen supplement layer.

6. The thin film transistor according to claim 5, characterized in that: The orthographic projection of the oxygen supplementing layer on the base substrate covers the orthographic projection of the target portion on the base substrate.

7. The thin film transistor according to claim 5, characterized in that: The material of the active layer includes: at least one of indium gallium zinc oxide, indium gallium zinc tin oxide, indium tin oxide, indium zinc oxide and indium tin zinc oxide; The material of the oxygen supplement layer includes: at least one of indium gallium zinc oxide, indium gallium zinc tin oxide, indium tin oxide, indium zinc oxide, indium tin zinc oxide, molybdenum oxide, aluminum oxide, copper oxide, indium oxide, tin oxide, zinc oxide and nickel oxide.

8. A method for preparing a thin film transistor, characterized in that: The method is used to prepare the thin film transistor according to any one of claims 1 to 7; the method comprises: An active layer, a source / drain electrode and an oxygen supplementing layer are formed on one side of the substrate; Wherein, the source and drain electrodes are located on a side of the active layer away from the substrate, the oxygen supplement layer is located on a side of the active layer away from the substrate, and the oxygen supplement layer comprises a metal oxide; The orthographic projection of the oxygen supplementing layer on the base substrate at least partially overlaps with the orthographic projection of the target portion of the active layer on the base substrate, and the orthographic projection of the target portion on the base substrate does not overlap with the orthographic projection of the source and drain on the base substrate.

9. The preparation method according to claim 8, characterized in that: An oxygen supplement layer is formed on one side of the substrate, comprising: In the process of depositing the metal material on one side of the substrate, oxygen is introduced into the reaction chamber to form a metal oxide film on the side of the active layer away from the substrate; Performing patterning on the metal oxide film to obtain an oxygen replenishing layer; In the process of introducing oxygen into the reaction chamber, the oxygen can diffuse to the target portion.

10. A display panel, characterized in that: The display panel comprises: a base substrate, and a plurality of thin film transistors according to any one of claims 1 to 7 located on the base substrate.

11. A display device, characterized in that: The display device comprises: a power supply component and the display panel as claimed in claim 10; The power supply component is used to supply power to the display panel.

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