Micromechanical component for a sensor device and method for manufacturing a micromechanical component for a sensor device

Abstract

The invention relates to a micromechanical component for a sensor device, having a substrate (10) with a substrate surface (10a), at least one stator electrode arranged on the substrate surface and / or on at least one intermediate layer at least partially covering the substrate surface, the at least one stator electrode each being formed from a first semiconductor layer and / or a metal layer, at least one actuator electrode arranged adjustably, the at least one actuator electrode each being formed from a second semiconductor and / or metal layer (P2), a membrane spanning the at least one stator electrode and the at least one actuator electrode, the membrane having a membrane outer side (18a) oriented away from the at least one stator electrode and the at least one actuator electrode, the membrane outer side being formed from a third semiconductor layer and / or a metal layer (P3), a stiffening structure and / or a protection structure (54) protruding on the membrane outer side being formed from a fourth semiconductor layer and / or a metal layer (P4).

Description

Technical Field

[0001] This invention relates to a micromechanical component for a sensor device and a sensor device itself. The invention also relates to a method for manufacturing the micromechanical component for a sensor device. Background Technology

[0002] Figure 1a and 1b The diagram shows schematic partial and overall views of a conventional semiconductor device, which is known to the applicant as prior art.

[0003] Figure 1a The semiconductor device shown in the middle section includes a substrate 10 having an intermediate layer 12 that at least partially covers the substrate surface 10a of the substrate 10. At least one stator electrode 14, formed of a first semiconductor layer and / or a metal layer P1, is disposed on the intermediate layer 12. The conventional semiconductor device also includes at least one actuator electrode 16, formed of a second semiconductor layer and / or a metal layer P2. The at least one actuator electrode 16 is suspended on a diaphragm 18 formed of a third semiconductor layer and / or a metal layer P3 such that the at least one actuator electrode 16 can be adjusted relative to the at least one stator electrode 14 by means of pressure or acoustic waves induced by the diaphragm 18. Furthermore, the conventional semiconductor device also includes at least one reference electrode 20 formed of the second semiconductor layer and / or a metal layer P2, at least one reference counter electrode 22 formed of the first semiconductor layer and / or a metal layer P1, and at least one printed conductor delivery section 24 formed of the first semiconductor layer and / or a metal layer P1.

[0004] from Figure 1b As can be seen, conventional semiconductor devices are packaged in the following manner: the substrate 10 is fixed to the circuit board 28 by means of a first adhesive layer 26, and the circuit board 28 is attached to the carrier substrate 32 by means of a second adhesive layer 30. A cover 34 having at least one air delivery opening 36 is also fixed to the carrier substrate 32, such that the micromechanical components are arranged in the internal volume surrounded by the carrier substrate 32 and the cover. Summary of the Invention

[0005] The present invention provides a micromechanical component for a sensor device having features according to the present invention, a sensor device having features according to the present invention, and a method for manufacturing a micromechanical component for a sensor device having features according to the present invention.

[0006] Advantages of the present invention

[0007] This invention enables the simple construction of archable diaphragms for micromechanical components / sensor devices with reinforcing and / or protective structures protruding from the outer side of the diaphragm without significantly increasing the manufacturing cost of the micromechanical components / sensor devices. The corresponding diaphragm reinforcement achieved in this way improves its arching performance as a response to pressure or sound waves on its outer side for sensing applications. Furthermore, this invention ensures advantageous protection of the diaphragm from contamination on its outer side and improves the diaphragm's robustness to mechanical stress. As described in more detail below, this invention also makes it easier to integrate micromechanical devices into more cost-effective and smaller packages. Therefore, for micromechanical components / sensor devices, this invention can reduce their manufacturing cost, decrease their structural size, and improve their robustness to contaminants and mechanical stress.

[0008] In an advantageous embodiment of the micromechanical component, the reinforcement and / or protective structure includes at least one gitter protruding from the outer side of the diaphragm. The gitter protruding from the outer side of the diaphragm ensures reliable particle protection of the outer side of the diaphragm, even when used as a sensing surface for measuring external pressure on the outer side of the diaphragm (in the case of known internal pressure on the inner side of the diaphragm) or for detecting sound waves.

[0009] All the mesh openings are, in particular, impermeable to water. This can be easily achieved by making the mesh openings so small / narrow that a gaseous medium can pass through the mesh openings, but water droplets cannot. In this case, the mesh can therefore reliably fulfill the function of a Gore-Membran.

[0010] As an alternative or supplement, the reinforcing and / or protective structures can also be coated at least partially with a hydrophobic protective layer. In this way, the outer side of the membrane can be protected from being wetted by liquids.

[0011] In another advantageous embodiment, the micromechanical component is at least partially encased by means of a molded block, wherein the molded block at least partially covers the reinforcing and / or protective structures. As described in detail below, the micromechanical component can be encased by means of a molded block due to its reinforced and / or protective structures protruding on the outer side of the diaphragm, wherein the outer side of the diaphragm, protected by the reinforced and / or protective structures, can still be reliably used as a sensing surface for measuring external pressure on the outer side of the diaphragm (in the case of known internal pressure on the inner side of the diaphragm) or for detecting sound waves.

[0012] Additionally, the exposed portions of the membrane surface by the molded block and / or the exposed portions of the reinforcing and / or protective structures by the molded block can be covered with gel. In this case, gelation can be achieved very easily because the outflow of gel can be reliably prevented by the lateral boundaries in the molded block.

[0013] In another advantageous embodiment, the micromechanical components are securely bonded to the circuit board by means of a bonding material arranged on a reinforcing and / or protective structure. Similarly, in this case, the reinforcing and / or protective structure protruding from the outer side of the diaphragm ensures that the outer side of the diaphragm can still be used as a sensing surface for measuring external pressure on the outer side of the diaphragm (in the case of known internal pressure on the inner side of the diaphragm) or for detecting sound waves.

[0014] Alternatively or supplementarily, at least one chip-to-chip connection can be arranged on the reinforcement and / or protection structure, through which the micromechanical components are electrically connected to the circuit board and / or another circuit board. Therefore, the electrical connection of the micromechanical components can be achieved in a relatively simple manner.

[0015] The aforementioned advantages are also guaranteed in sensor devices that incorporate such micromechanical components. These sensor devices can be, for example, pressure sensor devices and / or inertial sensor devices and / or microphones.

[0016] Furthermore, implementing a corresponding manufacturing method for such micro-mechanical components also achieves the aforementioned advantages, wherein the manufacturing method can be further extended based on the above-described embodiments of the micro-mechanical components. Attached Figure Description

[0017] Other features and advantages of the invention are described below with reference to the accompanying drawings. The drawings show:

[0018] Figure 1a and 1b Partial and overall schematic diagrams of a conventional semiconductor device are shown.

[0019] Figure 2a and 2b Partial and overall schematic diagrams of a first embodiment of the micromechanical component are shown;

[0020] Figure 3 A schematic diagram of the second embodiment of the micromechanical component is shown;

[0021] Figure 4 A schematic diagram of the third embodiment of the micromechanical component is shown;

[0022] Figure 5A schematic diagram of the fourth embodiment of the micromechanical component is shown;

[0023] Figure 6 A flowchart illustrating an implementation method of the manufacturing process is shown. Detailed Implementation

[0024] Figure 2a and 2b Partial and overall schematic diagrams of a first embodiment of the micromechanical component are shown.

[0025] The micromechanical components described further below can be advantageously used as part of a sensor device. The sensor device can be, for example, a pressure sensor device and / or an inertial sensor device and / or a microphone. However, it should be noted that the examples of sensor devices listed herein are not conclusive interpretations.

[0026] Figure 2a The micromechanical component shown in the middle portion has a substrate 10 with a substrate surface 10a. The substrate 10 can be, for example, a semiconductor substrate, particularly a silicon substrate. Furthermore, the micromechanical component has at least one stator electrode 14 disposed on the substrate surface 10a and / or disposed on at least one intermediate layer 12 that at least partially covers the substrate surface 10a. The at least one stator electrode 14 is formed by a first semiconductor layer and / or a metal layer P1 deposited on the substrate surface 10a and / or the at least one intermediate layer 12. For example, the first semiconductor layer and / or the metal layer P1 can be a polycrystalline silicon layer. More preferably, the at least one intermediate layer 12 is an insulating layer, such as a silicon dioxide layer and / or a silicon-rich nitride layer.

[0027] The micromechanical component also has at least one adjustable actuator electrode 16, each formed of a second semiconductor layer and / or a metal layer P2. The second semiconductor layer and / or metal layer P2 may also be a polysilicon layer. The second semiconductor layer and / or metal layer P2 is deposited on the first semiconductor layer and / or metal layer P1 and / or deposited on at least one first sacrificial layer 50 that at least partially covers the first semiconductor layer and / or metal layer P1, said at least one first sacrificial layer may be at least partially etched away. The at least one first sacrificial layer may be, for example, a silicon dioxide layer.

[0028] Furthermore, a diaphragm 18 having an outer diaphragm 18a spans at least one stator electrode 14 and at least one actuator electrode 16, the outer diaphragm being oriented away from the at least one stator electrode 14 and at least one actuator electrode 16. Figure 2a and 2bIn the example, the diaphragm 18 is unfolded by means of a frame portion 52 formed by at least a second semiconductor layer and / or a metal layer P2, such that the diaphragm 18 forms a hermetically sealed or thin-film package of at least electrodes 14 and 16. Therefore, at least one stator electrode 14 and at least one actuator electrode 16 are arranged within a hermetically sealed volume V spanned by the diaphragm 18, thus achieving reliable protection for electrodes 14 and 16.

[0029] Preferably, the diaphragm 18 is at least partially arched, for example, due to the pressure difference between the dominant external pressure on the outer side 18a of the diaphragm and the dominant internal pressure on the inner side 18b of the diaphragm oriented away from the outer side 18a, or due to the impact of sound waves on the outer side 18a. Additionally, at least one actuator electrode 16 may be suspended directly or indirectly on the inner side 18b of the diaphragm 18 such that at least one actuator electrode 16 can be adjusted relative to at least one stator electrode 14 by means of an arching caused by the pressure or sound waves of the diaphragm 18. In this case, the outer side 18a of the diaphragm 18 can be at least partially used as a sensing surface S for measuring external pressure (in the case of known internal pressure) or for detecting sound waves.

[0030] Film 18 is formed of a third semiconductor layer and / or metal layer P3. The third semiconductor layer and / or metal layer P3 may also be a polycrystalline silicon layer. The third semiconductor layer and / or metal layer P3 may be deposited on the second semiconductor layer and / or metal layer P2, and / or deposited on at least one second sacrificial layer (not depicted) that at least partially covers the second semiconductor layer and / or metal layer P2, said at least one second sacrificial layer may be at least partially etched away. The at least one second sacrificial layer may also be a silicon dioxide layer.

[0031] Additionally, the micromechanical component also has a reinforcing and / or protective structure 54, which protrudes from the outer side 18a of the diaphragm and is formed by a fourth semiconductor layer and / or metal layer P4. The fourth semiconductor and / or metal layer P4 is deposited on the third semiconductor and / or metal layer P3, and / or deposited on at least one layer (not shown) that at least partially covers the third semiconductor and / or metal layer P3. The fourth semiconductor and / or metal layer P4 may also be a polysilicon layer. The at least one layer that at least partially covers the third semiconductor and / or metal layer P3 may be a sacrificial oxide layer, which may be at least partially etched away.

[0032] The reinforcement of the diaphragm 18, achieved by means of a reinforcing structure and / or protective structure 54 protruding on the outer side 18a of the diaphragm, enables the uniformity of the gap distance d between at least one stator electrode 14 and its respective assigned actuator electrode 16. Similarly, the reinforcement of the diaphragm 18 by means of the reinforcing structure and / or protective structure 54 improves the pressure sensitivity or acoustic sensitivity of the micromechanical component and prevents / reduces the nonlinearity between changes in the dominant pressure level on the outer side 18a of the diaphragm and changes in the gap distance d.

[0033] Furthermore, by determining the dimensions of the fourth semiconductor layer and / or metal layer P4, the diaphragm span distance or the extension of the sensing surface S of the diaphragm 18 can be determined, while the lateral dimensions of the third semiconductor layer and / or metal layer P3, which serves as a hermetically sealed or thin-layer package, are independent of the subsequent diaphragm span distance of the diaphragm 18. Therefore, the volume V spanned by the diaphragm 18 and hermetically sealed can be relatively large without having to accept the disadvantage of a relatively large diaphragm span distance. As explained in more detail below, the reinforcing and / or protective structures 54 protruding on the outer surface 18a of the diaphragm can also be used to protect the outer surface 18a of the diaphragm from contamination, liquid wetting, and damage.

[0034] The possibility of using a diaphragm 18 to span and hermetically seal a relatively large volume V enables the integration of at least one other sensor electrode 56 (in addition to electrodes 14 and 16) into the volume V. Figure 2a and 2b In this embodiment, in addition to electrodes 14 and 16, at least one mass block 56 is exemplarily integrated into volume V as an "inertial sensor electrode 56". For example, at least one other sensor electrode / mass block 56 may be formed from a second semiconductor layer and / or a metal layer P2. At least one counter electrode (not depicted) cooperating with at least one other sensor electrode / mass block 56 and also integrated into volume V may be formed from a first semiconductor layer and / or a metal layer P1 or from a second semiconductor layer and / or a metal layer P2. As an alternative to or supplement to at least one other sensor electrode / mass block 56 and its at least one counter electrode, the aforementioned at least one reference electrode and its at least one reference counter electrode may also be integrated into volume V. Furthermore, at least one printed wire delivery section 24 may also be formed from a first semiconductor layer and / or a metal layer P1.

[0035] The reinforcing and / or protective structures 54 protruding on the outer side 18a of the diaphragm can also simplify the electrical connection of the micromechanical components. For example, at least one bondpad 58 can be fixed to the reinforcing and / or protective structures 54 without affecting the deformability of the diaphragm 18, and especially without affecting the sensing surface S of the diaphragm.

[0036] from Figure 2bAs can be seen, the micromechanical components described herein can be integrated into / integrated into the package in a simple manner, for example, by fixing the fixing surface 10b of the substrate 10 oriented away from the substrate surface 10a to the circuit board 28 using a first adhesive layer 26, and by attaching the fixing surface 28a of the circuit board 28 oriented away from the micromechanical component to the carrier substrate 32 using a second adhesive layer 30. For electrical connection between the micromechanical component and the circuit board 28, at least one bonding pad 58 of the micromechanical component is connected to / attached to each contact portion 62 of the circuit board 28 via a wire bond 60. If desired, the circuit board 28 can also be electrically connected to / attached to the contact portion 66 of the carrier substrate 32 via at least one other wire bond 64. Optionally, the fixing surface 32a of the carrier substrate 32 oriented away from the micromechanical component and the circuit board 28 can also be fixed to other devices by at least one solder pad 68 fixed thereon. The circuit board 28 can, in particular, be a silicon chip having CMOS circuitry for manipulating and reading the micromechanical component.

[0037] Furthermore, the micromechanical component is at least partially encased by a molding block 70, which at least partially covers the reinforcing and / or protective structure 54. During molding, the sensing surface S of the diaphragm 18 remains uncovered by the molding block 70 to ensure continued favorable sensitivity of the sensing surface S. Compared to in Figure 1b The packaging outlined in the document, based on existing technologies, is in... Figure 2b The illustrated package—also known as a film-assisted molded package—can be manufactured at a significantly more cost-effective rate. It should be noted that because the edges of the molded block 70 contact only the reinforcing and / or protective structures 54 and not the diaphragm 18, the diaphragm span distance of the diaphragm 18 or the extension of the sensing surface S will not change even if fluctuations occur during molding. (The edge position of the solidified molded block 70 may change slightly during molding). As an advantageous extension, in Figure 2a and 2b In this embodiment, the exposed portion of the outer surface 18a of the diaphragm by the molding block 70 and / or the exposed portion of the reinforcing structure and / or protective structure 54 by the molding block 70 are covered with gel 72. Gelation can be achieved very easily because the outflow of gel 72 can be reliably prevented by the lateral boundaries of the molding block 70. The robustness of the diaphragm 18 against fouling is improved by using gel 72 because deposits cannot form on the outer surface 18a / sensing surface S of the diaphragm, and even active chemicals cannot / cannot significantly erode the outer surface 18a / sensing surface S of the diaphragm. Therefore, the pressure sensitivity or acoustic sensitivity of the diaphragm 18 remains unaffected even in the presence of active chemicals.

[0038] Figure 3A schematic diagram of the second embodiment of the micromechanical component is shown.

[0039] As a supplement to the above embodiments, in Figure 3 The micromechanical component schematically shown also includes a grid 74 protruding from the outer side 18a of the diaphragm as part of its reinforcing and / or protective structure 54. As a “protective grid,” the grid 74 provides particle protection to the outer side 18a of the diaphragm, preventing contamination. Optionally, the potential applied to the grid 74 can differ from the potential applied to the diaphragm 18; in this case, the grid 74 also shields the diaphragm 18 from electromagnetic radiation, thereby improving the electromagnetic robustness of the micromechanical component. Furthermore, the reinforcing and / or protective structure 54 is at least partially coated with a hydrophobic protective layer 76, thereby providing moisture protection for the diaphragm 18. Alternatively, or as a supplement to the hydrophobic protective layer 76, all the grid openings 74a of the grid 74 can be constructed so small that they are impermeable to water. With the sufficiently fine perforations of the grid 74, the grid 74 is thus also able to perform the functions of a Gore diaphragm. In this configuration, gas molecules can still diffuse through the mesh openings 74a of the mesh 74 without problems; however, the mesh 74 blocks liquid droplets from entering the membrane 18. If coating at least one bonding pad 58 with a hydrophobic protective layer 76 is undesirable, for example, because at least one bonding pad 58 is made of aluminum, then the hydrophobic coating can be selectively removed from at least one bonding pad 58 by an annealing step. However, this is generally not necessary, as the hydrophobic coating can be constructed thin enough to allow easy penetration during in-line bonding while still achieving reliable liquid protection for the membrane 18.

[0040] about Figure 3 Other features and advantages of the micromechanical components are described in the embodiments described above.

[0041] Figure 4 A schematic diagram of the third embodiment of the micromechanical component is shown.

[0042] exist Figure 4 The micromechanical components shown in the diagram are Figure 2a and 2bThe implementation differs only in the grid 74 and the gap 78, which is constructed between the outer diaphragm 18a of the diaphragm 18 and at least one exposed area 54a of the reinforcing and / or protective structure 54. The reinforcing and / or protective structure 54 contacts the diaphragm 18 only by means of at least one anchored area 54b of the reinforcing and / or protective structure 54. The structure of the reinforcing and / or protective structure 54 and its at least one exposed area 54a improves the stress robustness of the diaphragm 18 by being spaced apart from the diaphragm 18 by the gap 78, which prevents / blocks mechanical stress from being introduced into the diaphragm 18 through the reinforcing and / or protective structure 54. Therefore, the gap 78 ensures favorable stress decoupling of the diaphragm 18. Even if the molded block 70 located on the reinforcing and / or protective structure 54 transfers some mechanical stress to the reinforcing and / or protective structure 54 due to the significant difference in the coefficient of thermal expansion between the materials of the molded block and the diaphragm 18, or due to changes in material properties during the product's lifespan, the gap 78 can prevent stress from being transferred to the diaphragm 18.

[0043] about Figure 4 Other features and advantages of micromechanical components, see reference. Figure 2a and 2b The implementation method.

[0044] Figure 5 A schematic diagram of the fourth embodiment of the micromechanical component is shown.

[0045] Unlike the embodiments described above, in Figure 5 The micromechanical components illustrated herein are packaged in such a manner that they are fixedly bonded to a circuit board 28 by means of a bonding material 80 disposed on a reinforcing structure and / or protective structure 54. Here, the circuit board 28 may also be, in particular, a silicon chip having CMOS circuitry for manipulating and reading the micromechanical components. The bonding material 80 may be shaped as a “bonding frame”. A pressure or acoustic inlet 82 can be established from the outside of the packaged micromechanical component to the outer side 18a (partial surface) of the diaphragm 18, which serves as the sensing surface S, by means of at least one opening constructed in the “bonding frame.” Channels between two adjacent layers of semiconductor and / or metal layers P1, P2, P3, and P4 can be constructed as pressure or acoustic inlets 82. The relatively thin channel construction ensures adequate protection against the infiltration of contaminants or liquids.

[0046] Optionally, at least one chip-to-chip connection 84 can still be arranged on the reinforcement structure and / or protection structure 54, through which the micromechanical components are electrically connected to the circuit board 28. To form at least one chip-to-chip connection 84, metal bonding, eutectic bonding, direct bonding, or thermoforming bonding methods can be implemented. Preferably, eutectic bonding is implemented using aluminum and using germanium, copper, and tin. The circuit board 28 can be secured to other devices by means of at least one solder ball 86 arranged on a fixing surface 28a oriented away from the micromechanical components on the circuit board 28.

[0047] about Figure 5 Other features and advantages of micromechanical components, see reference. Figure 2a and 2b The implementation method.

[0048] All of the aforementioned micromechanical components can be used as sensor devices, such as pressure sensor devices and / or inertial sensor devices and / or microphones, particularly for consumer or automotive applications. Compared to... Figure 1b The schematically illustrated package, based on existing technology, can be manufactured at a significantly more cost-effective rate. Furthermore, the package minimizes the effects of mechanical stress and increases the robustness of the corresponding micromechanical components to contamination.

[0049] Figure 6 A flowchart illustrating an implementation method of the manufacturing process is shown.

[0050] All of the aforementioned micromechanical components can be manufactured using the methods described below. However, the feasibility of these manufacturing methods is not limited to these micromechanical components.

[0051] In method step S1, a first semiconductor layer and / or a metal layer are deposited on the substrate surface of the substrate and / or on at least one intermediate layer that at least partially covers the substrate surface. Examples of the materials of the first semiconductor layer and / or metal layer and at least one intermediate layer have been mentioned above. At least one stator electrode is formed from the first semiconductor layer and / or metal layer and disposed on the substrate surface and / or at least one intermediate layer.

[0052] Then, as method step S2, a second semiconductor layer and / or metal layer is deposited on the first semiconductor layer and / or metal layer and / or on at least one first sacrificial layer that at least partially covers the first semiconductor layer and / or metal layer. Possible materials for the second semiconductor layer and / or metal layer and at least one first sacrificial layer have also been mentioned above. At least one actuator electrode is formed from the second semiconductor layer and / or metal layer.

[0053] In another method step S3, at least one third semiconductor layer and / or metal layer is deposited on the second semiconductor layer and / or metal layer and / or on at least one second sacrificial layer that at least partially covers the second semiconductor layer and / or metal layer. Examples of the materials for the third semiconductor layer and / or metal layer and the at least one second sacrificial layer have been described above. At least one diaphragm is formed from the third semiconductor layer and / or metal layer, spanning at least one stator electrode and at least one actuator electrode, the at least one diaphragm having an outer side oriented away from the at least one stator electrode and at least one actuator electrode. Optionally, at least one actuator electrode may be directly or indirectly fixed to an inner side of the diaphragm, the inner side of the diaphragm being oriented away from the outer side of the diaphragm.

[0054] As a method step S4, a fourth semiconductor layer and / or metal layer is deposited on the outer side of the film and / or on at least one layer that at least partially covers the outer side of the film. For example, a polysilicon layer can be deposited as the fourth semiconductor layer and / or metal layer. At least one reinforcing structure and / or protective structure protruding on the outer side of the film is formed by the fourth semiconductor layer and / or metal layer. The at least one layer that at least partially covers the outer side of the film can be a sacrificial oxide layer, the structure of which defines at least one contact surface of the reinforcing structure and / or protective structure on the outer side of the film, or may be at least one contact hole. If at least one layer is removed from at least one partial surface of the outer side of the film before depositing the fourth semiconductor layer and / or metal layer, the reinforcing structure and / or protective structure contacts the outer side of the film on said at least one partial surface. However, when constructing the reinforcing structure and / or protective structure, a partial region of at least one layer can also be used as an etch stop. If necessary, at least one layer can then be removed by means of an etching method, preferably by means of gaseous hydrogen fluoride.

[0055] In method step S5, performed before or after method step S4, at least one first sacrificial layer and / or at least one second sacrificial layer are removed in at least a portion such that at least one actuator electrode is adjustablely arranged. As method step S5, multiple etching steps may also be performed before and after method step S4. Method step S5 also ensures the diaphragm's arching capability, enabling pressure-induced or acoustic-induced arching of the diaphragm. If at least one actuator electrode is directly or indirectly fixed to the inner side of the diaphragm, the at least one actuator electrode can be adjusted relative to at least one stator electrode by means of pressure-induced or acoustic-induced arching of the diaphragm. The diaphragm diameter can be determined by constructing a reinforcing structure and / or a protective structure. This opens up additional design freedom for the diaphragm diameter configuration, as the diaphragm diameter can be adjusted very precisely, especially through trench prozessing performed to shape the reinforcing and / or protective structures.

[0056] Additional methodological steps can be used to achieve other features of the aforementioned micromechanical components. In particular, the features of the aforementioned packaging can be achieved. However, these functions will not be described again here.

Claims

1. A micromechanical component for a sensor device, the micromechanical component having: Substrate (10), the substrate having a substrate surface (10a); At least one stator electrode (14) is disposed on the substrate surface (10a) and / or on at least one intermediate layer (12) and is formed of a first semiconductor layer and / or a metal layer (P1), respectively. The at least one intermediate layer at least partially covers the substrate surface (10a), wherein the first semiconductor layer and / or metal layer (P1) are deposited on the substrate surface (10a) of the substrate (10) and / or on the at least one intermediate layer (12); At least one actuator electrode (16) is adjustablely arranged and formed of a second semiconductor layer and / or a metal layer (P2), wherein the second semiconductor layer and / or metal layer (P2) is deposited on the first semiconductor layer and / or metal layer (P1) and / or at least one first sacrificial layer (50), wherein the at least one first sacrificial layer (50) at least partially covers the first semiconductor layer and / or metal layer (P1). A diaphragm (18) spanning the at least one stator electrode (14) and the at least one actuator electrode (16), and the diaphragm having an outer side (18a) oriented away from the at least one stator electrode (14) and the at least one actuator electrode (16), and the diaphragm being formed of a third semiconductor layer and / or a metal layer (P3), wherein the at least one third semiconductor layer and / or metal layer (P3) is deposited on the second semiconductor layer and / or metal layer (P2) and / or at least one second sacrificial layer, wherein the at least one second sacrificial layer at least partially covers the second semiconductor layer and / or metal layer (P2). Its features are, A reinforcing structure and / or protective structure (54) protrudes on the outer side of the membrane (18a) and is formed by a fourth semiconductor layer and / or a metal layer (P4), wherein the fourth semiconductor layer and / or metal layer (P4) is deposited on the outer side of the membrane (18a) and / or at least partially covers at least one layer of the outer side of the membrane (18a).

2. The micromechanical component according to claim 1, wherein, The reinforcement and / or protective structure (54) includes at least one grid (74) that protrudes on the outer side (18a) of the diaphragm.

3. The micromechanical component according to claim 2, wherein, All grid openings (74a) of the grid (74) are impermeable.

4. The micromechanical component according to any one of the preceding claims, wherein, The reinforcement structure and / or protective structure (54) is at least partially coated with a hydrophobic protective layer (76).

5. The micromechanical component according to any one of the preceding claims, wherein, The micromechanical component is at least partially encapsulated by a molding block (70), wherein the molding block (70) at least partially covers the reinforcing structure and / or protective structure (54).

6. The micromechanical component according to claim 5, wherein, The exposed portion of the outer side (18a) of the membrane by the molded block (70) and / or the exposed portion of the reinforcing structure and / or protective structure (54) by the molded block (70) are covered with gel (72).

7. The micromechanical component according to any one of the preceding claims, wherein, The micromechanical components are fixedly bonded to the circuit board (28) by means of bonding material (80) arranged on the reinforcement structure and / or protection structure (54).

8. The micromechanical component according to any one of the preceding claims, wherein, At least one chip-to-chip connection (84) is arranged on the reinforcement structure and / or protection structure (54), and the micromechanical components are respectively connected to the circuit board (28) and / or other circuit boards through the at least one chip-to-chip connection.

9. A sensor device having a micromechanical component according to any one of the preceding claims, wherein, The sensor device is a pressure sensor device and / or an inertial sensor device and / or a microphone.

10. A method for manufacturing a micromechanical component for a sensor device, the method comprising the following steps: A first semiconductor layer and / or a metal layer (P1) are deposited on the substrate surface (10a) of the substrate (10) and / or on at least one intermediate layer (12), wherein, At least one stator electrode (14) is formed from the first semiconductor layer and / or metal layer (P1), wherein the at least one stator electrode (14) is disposed on the substrate surface (10a) and / or disposed on the at least one intermediate layer (12), wherein the at least one intermediate layer (12) at least partially covers the substrate surface (10a) (S1). A second semiconductor layer and / or metal layer (P2) is deposited on the first semiconductor layer and / or metal layer (P1) and / or on at least one first sacrificial layer (50), wherein at least one actuator electrode (16) is formed by the second semiconductor layer and / or metal layer (P2), wherein the at least one first sacrificial layer (50) at least partially covers the first semiconductor layer and / or metal layer (P1) (S2). At least one third semiconductor layer and / or metal layer (P3) is deposited on the second semiconductor layer and / or metal layer (P2) and / or on at least one second sacrificial layer, wherein at least one diaphragm (18) is formed by the third semiconductor layer and / or metal layer (P3) across the at least one stator electrode (14) and the at least one actuator electrode (16), wherein the at least one diaphragm has an outer side (18a) oriented away from the at least one stator electrode (14) and the at least one actuator electrode (16), wherein the at least one second sacrificial layer at least partially covers the second semiconductor layer and / or metal layer (P2) (S3). Thus at least partially removing the at least one first sacrificial layer (50) and / or the at least one second sacrificial layer, such that the at least one actuator electrode (16) is adjustablely arranged (S5). Its features include the following steps: A fourth semiconductor layer and / or metal layer (P4) is deposited on the outer side of the membrane (18a) and / or on at least one layer that at least partially covers the outer side of the membrane (18a), wherein at least one reinforcing structure and / or protective structure (54) protruding on the outer side of the membrane (18a) is formed by the fourth semiconductor layer and / or metal layer (P4).

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