Micro-component capable of mass transfer, method for making and transferring the same, and display device

Abstract

The present invention provides a micro-component that can be transferred in large quantities, a method for making and transferring the micro-component, and a display device, including a light-emitting structure including a plurality of LED core particles isolated from each other by grooves, and each of the LED core particles includes an epitaxial stack, a chain layer, an insulating protective layer, a first electrode, and a second electrode; each of the LED core particles is embedded in the groove through the bonding layer, so that the LED core particles are suspended upside down above the supporting substrate; and a local area of ​​the epitaxial stack is etched to a portion of the first-type semiconductor layer to form a groove and a table; the chain layer is stacked on the table and extends to the grooves on both sides of the corresponding LED core particles; the insulating protective layer covers each of the LED core particles and their corresponding chain layers, and respectively exposes part of the surface of the table and the groove corresponding to each of the LED core particles.

Description

Technical Field

[0001] The present invention relates to the field of light emitting diodes, and in particular to a micro-element capable of being transferred in large quantities, a method for making the micro-element and transferring the micro-element, and a display device. Background Art

[0002] Micro-component technology refers to a micro-sized component array integrated at a high density on a substrate. Currently, micro-pitch light-emitting diode (Micro LED) technology has gradually become a hot research topic, and the industry is looking forward to high-quality micro-component products entering the market. High-quality micro-pitch light-emitting diode products will have a profound impact on traditional display products such as LCD / OLED that are already on the market.

[0003] In the process of manufacturing microcomponents, microcomponents are first formed on a donor substrate, and then the microcomponents are transferred to a receiving substrate. The receiving substrate is, for example, a display screen. One difficulty in the process of manufacturing microcomponents is how to transfer the microcomponents from the donor substrate to the receiving substrate. In order to achieve the mass transfer of microcomponents, many manufacturers currently use micro-stamp transfer technology to transfer microcomponents to circuit boards using van der Waals forces, so the structure of the microcomponents that can be transferred is crucial. The key point of this structure is that the microcomponent is in a suspended state and detached from the supporting substrate. The microcomponent is bound to the substrate through an anchor structure; then the chain is broken by mechanical force to achieve the mass transfer of microcomponents.

[0004] Most of the structures proposed so far use an insulating protective layer as the chain layer of the chip. However, if the chain layer is made before the growth substrate is removed, in order to ensure that the insulating protective layer can completely protect the side walls of the LED core, the etching area of ​​the insulating protective layer will be larger than the chip size, resulting in a circle of insulating protective layer remaining around the LED core, as shown in the attached manual. Figure 1 , Figure 2 As shown. The remaining insulating protective layer may break during the subsequent transfer process, thereby contaminating the transfer head and affecting the transfer effect. Therefore, in order to remove the remaining insulating protective layer around the LED core particles, most people choose to make a chain layer after removing the growth substrate, and remove the remaining insulating protective layer around the LED core particles through dry etching and other technologies. However, the inventors found during the experiment that the photolithography process after removing the growth substrate is more difficult to process, such as fuzzy alignment points, which leads to problems such as misalignment during the transfer process.

[0005] In view of this, the inventor specially designed a micro-component capable of mass transfer, a method for manufacturing and transferring the micro-component, and a display device, which resulted in the present case. Summary of the invention

[0006] The purpose of the present invention is to provide a micro-component that can be transferred in large quantities, a method for making and transferring the micro-component, and a display device, so as to solve the problem caused by the residual insulating protective layer around the LED core particles in the prior art.

[0007] In order to achieve the above object, the technical solution adopted by the present invention is as follows:

[0008] A micro-component capable of mass transfer, comprising:

[0009] A supporting substrate and a bonding layer disposed on a surface of the supporting substrate;

[0010] A light-emitting structure, the light-emitting structure comprising a plurality of LED core particles isolated from each other by grooves; and each of the LED core particles is embedded in the grooves through the bonding layer, so that the LED core particles are suspended upside down above the supporting substrate;

[0011] Each of the LED core particles includes an epitaxial stack, a chain layer, an insulating protection layer, a first electrode and a second electrode; and the epitaxial stack includes a first-type semiconductor layer, an active region and a second-type semiconductor layer stacked in sequence along a first direction, and a local area of ​​the epitaxial stack is etched to part of the first-type semiconductor layer to form a groove and a table; the first direction is perpendicular to the support substrate and points from the epitaxial stack to the support substrate;

[0012] The chain layer is stacked on the table and extends to the grooves on both sides of the corresponding LED core particles, and the chain layer includes an insulating material;

[0013] The insulating protective layer covers each of the LED core particles and the corresponding chain layer, and exposes a portion of the surface of the table and the groove corresponding to each of the LED core particles;

[0014] The first electrode is stacked on the exposed portion of the groove;

[0015] The second electrode is stacked on the exposed portion of the mesa.

[0016] Preferably, the grooves include horizontal grooves and vertical grooves formed by crossing, and the chain layer extends to the horizontal grooves or vertical grooves on both sides of the corresponding LED core particles.

[0017] Preferably, a transparent conductive layer is provided on the table of each LED core particle, and the chain layer is stacked on a surface of the transparent conductive layer facing away from the table, and extends to the grooves on both sides of the corresponding LED core particle.

[0018] Preferably, under the condition of laser irradiation, the chain layer is less difficult to decompose than the insulating protective layer.

[0019] Preferably, the chain layer includes one or more of silicon nitride and titanium oxide.

[0020] Preferably, the insulating protection layer includes one or more of silicon oxide and aluminum oxide.

[0021] Preferably, the cross-sectional area of ​​the chain layer located on the surface of the table is S, and the surface area of ​​the table is A, then A / 100≤S≤A / 50.

[0022] Preferably, the sacrificial layer includes one or more of SiO2, SiN, and Al2O3.

[0023] Preferably, the bonding layer comprises metal or silica gel or ultraviolet glue or resin.

[0024] The present invention also provides a method for manufacturing a micro-component capable of mass transfer, the method comprising the following steps:

[0025] S01, providing a growth substrate;

[0026] S02, growing an epitaxial stack, wherein the epitaxial stack includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer sequentially stacked on the surface of the growth substrate;

[0027] S03, exposing part of the first-type semiconductor layer by etching the epitaxial stack, thereby forming a plurality of grooves and terraces, wherein the grooves and terraces are arranged opposite to each other;

[0028] S04, depositing a transparent conductive layer on the surface of each of the mesas;

[0029] S05, generating a plurality of grooves by etching a portion of the epitaxial stack, thereby forming a plurality of epitaxial arrays arranged at intervals; the grooves include horizontal grooves and vertical grooves formed by crossing;

[0030] S06, depositing a chain layer on the surface of the transparent conductive layer corresponding to each of the epitaxial arrays, and the chain layer extends to the horizontal grooves on both sides of the corresponding epitaxial array; the chain layer includes an insulating material;

[0031] S07, manufacturing an insulating protective layer, wherein the insulating protective layer is stacked on the surface of each of the grooves and the epitaxial array, covers the chain layer, and exposes a portion of the surface of the mesa and groove corresponding to each of the epitaxial arrays;

[0032] S08, respectively making a first electrode and a second electrode on the exposed portion of each groove and the exposed portion of the table, thereby obtaining a plurality of LED core particles isolated from each other;

[0033] S09, manufacturing a sacrificial layer, wherein the sacrificial layer is deposited on the surface of each LED core particle and the sidewall of each groove;

[0034] S10, manufacturing a bonding layer, wherein the bonding layer covers the sacrificial layer and is embedded in each of the grooves to form a connection with the insulating protection layer;

[0035] S11, providing a supporting substrate, and bonding each of the LED chips to the supporting substrate;

[0036] S12, peeling off the growth substrate to expose the chain layer located at the horizontal groove, and simultaneously peeling off the insulating protection layer located at the groove, so that the sacrificial layer connected to the surface of the insulating protection layer is partially exposed;

[0037] S13, placing the micro-component after the above steps in a corrosion solution, and etching the sacrificial layer with the corrosion solution to form a suspended area, so that the LED core particle is suspended upside down above the support substrate.

[0038] Preferably, step S13 further comprises first thinning the thickness of the chain layer and then etching away the sacrificial layer using a corrosive solution.

[0039] Preferably, under the condition of laser irradiation, the difficulty of decomposing the chain layer is lower than the difficulty of decomposing the insulating protective layer. Therefore, when the growth substrate is peeled off to expose the chain layer located at the horizontal groove in step S10, the insulating protective layer located at the groove can be peeled off at the same time, so that the sacrificial layer connected to the surface of the insulating protective layer is partially exposed.

[0040] Preferably, the cross-sectional area of ​​the chain layer located on the surface of the table is S, and the surface area of ​​the table is A, then A / 100≤S≤A / 50.

[0041] Preferably, the sacrificial layer includes one or more of SiO2, SiN, and Al2O3.

[0042] The present invention also provides a transfer method for realizing mass transfer of any of the micro-components described above, the transfer method comprising: using the exposed portion of the chain layer as a chain, and pulling the chain apart after positioning by a transfer device, thereby realizing mass transfer of the LED core particles.

[0043] The present invention also provides a display device, which is manufactured by adopting the above transfer method.

[0044] Through the above technical scheme, it can be known that the micro-component that can be transferred in large quantities provided by the present invention includes the light-emitting structure including a number of LED core particles isolated from each other by grooves, and each of the LED core particles includes an epitaxial stack, a chain layer, an insulating protective layer, a first electrode and a second electrode; each of the LED core particles is embedded in the groove through the bonding layer, so that the LED core particles are suspended upside down above the supporting substrate; and the local area of ​​the epitaxial stack is etched to part of the first-type semiconductor layer to form a groove and a table; the chain layer is stacked on the table and extends to the grooves on both sides of the corresponding LED core particles; the insulating protective layer covers each of the LED core particles and its corresponding chain layer, and exposes part of the surface of the table and groove corresponding to each of the LED core particles. Based on the above structure, in the subsequent transfer process, the exposed part of the chain layer is used as a chain, and the chain is pulled apart after positioning by the transfer equipment, so as to realize the transfer of the LED core particles; at the same time, it can also avoid the problem that the insulating protective layer remaining on the periphery of the LED core particles may break during the subsequent transfer process, thereby contaminating the transfer head and affecting the transfer effect.

[0045] Furthermore, by setting: a transparent conductive layer is provided on the table of each LED core particle, and the chain layer is stacked on the surface of the transparent conductive layer on the side away from the table, and extends to the grooves on both sides of the corresponding LED core particles; while realizing the current expansion of the LED core particles, it is avoided that the transparent conductive layer and the second semiconductor layer are damaged by breaking the chain after positioning by the transfer equipment during the subsequent transfer process.

[0046] Then, the cross-sectional area of ​​the chain layer located on the surface of the table is S, and the surface area of ​​the table is A, then A / 100≤S≤A / 50; while effectively ensuring that the chain can be broken after positioning by the transfer equipment during the transfer process, the light emitting area of ​​the LED core particles is further guaranteed.

[0047] The present invention also provides a manufacturing method based on the above micro-component structure, which is simple to operate and easy to implement while achieving the above technical effects.

[0048] Furthermore, by setting: under the condition of laser irradiation, the difficulty of decomposing the chain layer is lower than the difficulty of decomposing the insulating protective layer, and utilizing the difficulty of decomposing the chain layer and the insulating protective layer during laser stripping, during the manufacturing process, the growth substrate can be simply and conveniently stripped to expose the chain layer located at the horizontal groove, and the insulating protective layer located at the groove can be stripped at the same time, so that the sacrificial layer connected to the surface of the insulating protective layer is partially exposed; thereby, there is no residual insulating protective layer on the periphery of the LED core particle.

[0049] Furthermore, step S13 also includes first thinning the thickness of the chain layer and then etching away the sacrificial layer with a corrosive solution; this can further ensure that the chain can be easily broken after positioning by the transfer equipment during the transfer process without causing damage to the LED core particles.

[0050] The present invention also provides a display device, which is formed by the above transfer method and has a simple structure and is easy to operate and realize. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0052] Figure 1 It is a schematic diagram of the structure of a chain in the prior art that uses an insulating protective layer as a transfer process of LED core particles;

[0053] Figure 2 It is a top view of the structure of a chain in the prior art that uses an insulating protective layer as a transfer process of LED core particles;

[0054] Figure 3 A schematic diagram of the structure of a micro-component capable of mass transfer provided by an embodiment of the present invention;

[0055] Figure 4.1 to Figure 4.17 A schematic structural diagram corresponding to a method for manufacturing a micro-component that can be used for micro-transfer provided in an embodiment of the present invention;

[0056] Explanation of symbols in the figure: L, LED core, L1, groove, L2, table, L3, groove, L4, epitaxial array, 1, growth substrate, 2, first type semiconductor layer, 3, active area, 4, second type semiconductor layer, 5, transparent conductive layer, 6, chain layer, 7, insulating protection layer, 8, second electrode, 9, first electrode, 10, sacrificial layer, 10.1, suspended area, 11, bonding layer, 12, supporting substrate. DETAILED DESCRIPTION

[0057] To make the content of the present invention clearer, the content of the present invention is further described below in conjunction with the accompanying drawings. The present invention is not limited to this specific embodiment. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0058] like Figure 3 As shown, a micro-component capable of mass transfer comprises:

[0059] A supporting substrate 12 and a bonding layer 11 disposed on a surface of the supporting substrate 12;

[0060] The light-emitting structure includes a plurality of LED core particles L isolated from each other by the groove L3; and each LED core particle L is embedded in the groove L3 through the bonding layer 11, so that the LED core particle L is suspended upside down above the supporting substrate 12;

[0061] Each LED core L includes an epitaxial stack, a chain layer 6, an insulating protection layer 7, a first electrode 9 and a second electrode 8; and the epitaxial stack includes a first-type semiconductor layer 2, an active region 3 and a second-type semiconductor layer 4 stacked in sequence along a first direction, and a local area of ​​the epitaxial stack is etched to a portion of the first-type semiconductor layer 2 to form a groove L1 and a table L2; the first direction is perpendicular to the support substrate 12 and points from the epitaxial stack to the support substrate 12;

[0062] The chain layer 6 is stacked on the mesa L2 and extends to the grooves L3 on both sides of the corresponding LED core L, and the chain layer 6 includes an insulating material;

[0063] The insulating protection layer 7 covers each LED core L and its corresponding chain layer 6 , and exposes a portion of the surface of the table L2 and the groove L1 corresponding to each LED core L;

[0064] The first electrode 9 is stacked on the exposed portion of the groove L1;

[0065] The second electrode 8 is stacked on the exposed portion of the mesa L2.

[0066] It should be noted that, in the present embodiment, the specific material composition of the supporting substrate 12 and the light-emitting structure is not limited, nor is the specific structure of the epitaxial stack. Any form of LED core L in which the first electrode 9 and the second electrode 8 are in a horizontal structure in the prior art will suffice; that is, the specific material types of the first-type semiconductor layer 2, the active region 3, and the second-type semiconductor layer 4 may not be limited in the present embodiment. For example, the first-type semiconductor layer may be but is not limited to an N-GaN layer, and correspondingly, the second-type semiconductor layer may be but is not limited to a P-GaN layer.

[0067] In this embodiment, the grooves L3 include horizontal grooves and vertical grooves formed by crossing, and the chain layer 6 extends to the horizontal grooves or vertical grooves on both sides of the corresponding LED core L.

[0068] In this embodiment, a transparent conductive layer 5 is disposed on the table L2 of each LED chip L, and a chain layer 6 is stacked on a surface of the transparent conductive layer 5 away from the table L2 and extends to the grooves L3 on both sides of the corresponding LED chip L.

[0069] In this embodiment, under the condition of laser irradiation, the difficulty of decomposing the chain layer 6 is lower than the difficulty of decomposing the insulating protection layer 7 .

[0070] In this embodiment, the chain layer 6 includes one or more of silicon nitride and titanium oxide.

[0071] In this embodiment, the insulating protection layer 7 includes one or more of silicon oxide and aluminum oxide.

[0072] In this embodiment, the cross-sectional area of ​​the chain layer 6 located on the surface of the table L2 is S, and the surface area of ​​the table L2 is A, then A / 100≤S≤A / 50.

[0073] In this embodiment, the sacrificial layer 10 includes one or more of SiO 2 , SiN, and Al 2 O 3 .

[0074] In this embodiment, the bonding layer 11 includes metal or silica gel or ultraviolet glue or resin.

[0075] This embodiment also provides a method for manufacturing a micro-component capable of mass transfer, the manufacturing method comprising the following steps:

[0076] S01, such as Figure 4.1 As shown, a growth substrate 1 is provided;

[0077] S02, such as Figure 4.2 As shown, an epitaxial stack is grown, and the epitaxial stack includes a first-type semiconductor layer 2, an active layer, and a second-type semiconductor layer 4 sequentially stacked on the surface of a growth substrate 1;

[0078] S03, such as Figure 4.3 As shown, by etching the epitaxial stack, part of the first type semiconductor layer 2 is exposed, thereby forming a plurality of grooves L1 and terraces L2, and the grooves L1 are arranged opposite to the terraces L2;

[0079] S04, such as Figure 4.4 As shown, a transparent conductive layer 5 is deposited on the surface of each mesa L2;

[0080] S05, such as Figure 4.5 As shown, a plurality of grooves L3 are generated by etching a portion of the epitaxial stack, thereby forming a plurality of epitaxial arrays L4 arranged at intervals; the grooves L3 include horizontal grooves L3 and vertical grooves L3 formed by crossing;

[0081] S06, such as Figure 4.6 and Figure 4.7 As shown, a chain layer 6 is deposited on the surface of the transparent conductive layer 5 corresponding to each epitaxial array L4, and the chain layer 6 extends to the horizontal grooves L3 on both sides of the corresponding epitaxial array L4; the chain layer 6 includes an insulating material;

[0082] in, Figure 4.6The schematic diagram of the structure corresponding to step S06 is shown. Figure 4.7 A top view of the structure corresponding to step S06 is shown;

[0083] S07, such as Figure 4.8 and Figure 4.9 As shown, an insulating protective layer 7 is manufactured, and the insulating protective layer 7 is stacked on the surface of each groove L3 and the epitaxial array L4, and covers the chain layer 6, and exposes a part of the surface of the mesa L2 and the groove L1 corresponding to each epitaxial array L4;

[0084] in, Figure 4.8 The structural diagram corresponding to step S07 is shown. Figure 4.9 A top view of the structure corresponding to step S07 is shown;

[0085] S08, such as Figure 4.10 As shown, the first electrode 9 and the second electrode 8 are respectively made on the exposed part of each groove L1 and the exposed part of the table L2, thereby obtaining a plurality of LED core particles L isolated from each other;

[0086] S09, such as Figure 4.11 As shown, a sacrificial layer 10 is made, and the sacrificial layer 10 is deposited on the surface of each LED core L and the sidewall of each groove L3;

[0087] S10, such as Figure 4.12 As shown, a bonding layer 11 is made, the bonding layer 11 covers the sacrificial layer 10, and is embedded in each groove L3 to form a connection with the insulating protection layer 7;

[0088] S11, such as Figure 4.13 As shown, a support substrate 12 is provided, and each LED chip is bonded to the support substrate 12;

[0089] S12, such as Figure 4.14 and Figure 4.15 As shown, the growth substrate 1 is peeled off to expose the chain layer 6 located at the horizontal groove L3, and the insulating protection layer 7 located at the groove L3 is peeled off at the same time, so that the sacrificial layer 10 connected to the surface of the insulating protection layer 7 is partially exposed;

[0090] in, Figure 4.14 The structural diagram corresponding to step S12 is shown. Figure 4.15 A top view of the structure corresponding to step S12 is shown;

[0091] S13, such as Figure 4.16 and Figure 4.17 As shown, the micro-component after the above steps is placed in a corrosion solution, and the sacrificial layer 10 is etched away by the corrosion solution to form a suspended area 10.1, so that the LED core L is suspended upside down above the support substrate 12.

[0092] in, Figure 4.16 The structural diagram corresponding to step S13 is shown. Figure 4.17 A top view of the structure corresponding to step S13 is shown.

[0093] In this embodiment, step S13 further includes first thinning the thickness of the chain layer 6 and then etching away the sacrificial layer 10 using a corrosive solution.

[0094] In this embodiment, under the condition of laser irradiation, the difficulty of decomposing the chain layer 6 is lower than the difficulty of decomposing the insulating protective layer 7. Therefore, when the growth substrate 1 is peeled off in step S10 to expose the chain layer 6 located at the horizontal groove L3, the insulating protective layer 7 located at the groove L3 can be peeled off at the same time, so that the sacrificial layer 10 connected to the surface of the insulating protective layer 7 is partially exposed.

[0095] In this embodiment, the cross-sectional area of ​​the chain layer 6 located on the surface of the table L2 is S, and the surface area of ​​the table L2 is A, then A / 100≤S≤A / 50.

[0096] In this embodiment, the sacrificial layer 10 includes one or more of SiO 2 , SiN, and Al 2 O 3 .

[0097] This embodiment also provides a transfer method for realizing mass transfer of any of the above-mentioned micro-components, the transfer method comprising: using the exposed portion of the chain layer 6 as a chain, and breaking the chain after positioning by a transfer device, thereby realizing mass transfer of LED core particles L.

[0098] This embodiment also provides a display device, which is manufactured using the above transfer method.

[0099] Through the above technical scheme, it can be known that the micro-component that can be transferred in large quantities provided by this embodiment includes a light-emitting structure including a plurality of LED core particles L isolated from each other by grooves L3, and each LED core particle L includes an epitaxial stack, a chain layer 6, an insulating protective layer 7, a first electrode 9 and a second electrode 8; each LED core particle L is embedded in the groove L3 through a bonding layer 11, so that the LED core particle L is suspended upside down above the supporting substrate 12; and a local area of ​​the epitaxial stack is etched to a part of the first-type semiconductor layer 2 to form a groove L1 and a table L2; the chain layer 6 is stacked on the table L2 and extends to the grooves L3 on both sides of the corresponding LED core particle L; the insulating protective layer 7 covers each LED core particle L and its corresponding chain layer 6, and respectively exposes part of the surface of the table L2 and the groove L1 corresponding to each LED core particle L. Based on the above structure, in the subsequent transfer process, the exposed part of the chain layer 6 is used as the chain, and the chain is pulled apart after positioning by the transfer equipment to achieve the transfer of the LED core L; at the same time, it can also avoid the problem that the insulating protective layer 7 remaining on the periphery of the LED core L may break during the subsequent transfer process, thereby contaminating the transfer head and affecting the transfer effect.

[0100] Furthermore, by setting: a transparent conductive layer 5 is provided on the table L2 of each LED core L, and a chain layer 6 is stacked on the surface of the transparent conductive layer 5 on the side away from the table L2, and extends to the grooves L3 on both sides of the corresponding LED core L; while realizing the current expansion of the LED core L, it is avoided that the transparent conductive layer 5 and the second semiconductor layer 4 are damaged by breaking the chain after positioning by the transfer equipment during the subsequent transfer process.

[0101] Then, the cross-sectional area of ​​the chain layer 6 located on the surface of the table L2 is S, and the surface area of ​​the table L2 is A, then A / 100≤S≤A / 50; while effectively ensuring that the chain can be broken after positioning by the transfer equipment during the transfer process, the light emitting area of ​​the LED core particle L is further guaranteed.

[0102] This embodiment also provides a manufacturing method based on the above-mentioned micro-component structure, which is simple to operate and easy to implement while achieving the above-mentioned technical effects.

[0103] Furthermore, by setting: under the condition of laser irradiation, the difficulty of decomposing the chain layer 6 is lower than the difficulty of decomposing the insulating protective layer 7, and utilizing the ease of decomposing the chain layer 6 and the insulating protective layer 7 when peeling off, during the manufacturing process, the growth substrate 1 can be simply and conveniently peeled off to expose the chain layer 6 located at the horizontal groove L3, and at the same time, the insulating protective layer 7 located at the groove L3 can be peeled off, so that the sacrificial layer 10 connected to the surface of the insulating protective layer 7 is partially exposed; thereby, there is no residual insulating protective layer 7 on the periphery of the LED core particle L.

[0104] Furthermore, step S13 also includes first thinning the thickness of the chain layer 6 and then etching away the sacrificial layer 10 with a corrosive solution; this can further ensure that the chain can be easily broken after positioning by the transfer equipment during the transfer process, without causing damage to the LED core particles L.

[0105] This embodiment also provides a display device, which is formed by the above transfer method and has a simple structure and is easy to operate and implement.

[0106] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0107] It should also be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprises", "comprising" or any other variants thereof are intended to cover non-exclusive inclusion, so that an article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such article or device. In the absence of further restrictions, the elements defined by the sentence "comprising a ..." do not exclude the existence of other identical elements in the article or device including the above elements.

[0108] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A micro-component capable of mass transfer, characterized in that: include: A supporting substrate and a bonding layer disposed on a surface of the supporting substrate; A light-emitting structure, the light-emitting structure comprising a plurality of LED core particles isolated from each other by grooves; and each of the LED core particles is embedded in the grooves through the bonding layer, so that the LED core particles are suspended upside down above the supporting substrate; Each of the LED core particles includes an epitaxial stack, a chain layer, an insulating protection layer, a first electrode and a second electrode; and the epitaxial stack includes a first-type semiconductor layer, an active region and a second-type semiconductor layer stacked in sequence along a first direction, and a local area of ​​the epitaxial stack is etched to part of the first-type semiconductor layer to form a groove and a table; the first direction is perpendicular to the support substrate and points from the epitaxial stack to the support substrate; The chain layer is stacked on the table and extends to the grooves on both sides of the corresponding LED core particles, and the chain layer includes an insulating material; The insulating protective layer covers each of the LED core particles and the corresponding chain layer, and exposes a portion of the surface of the table and the groove corresponding to each of the LED core particles; The first electrode is stacked on the exposed portion of the groove; The second electrode is stacked on the exposed portion of the mesa; Wherein, the grooves include horizontal grooves and vertical grooves formed by crossing, and the chain layer extends to the horizontal grooves on both sides of the corresponding LED core particles; A transparent conductive layer is arranged on the table of each LED core particle, and the chain layer is stacked on a surface of the transparent conductive layer which is away from the table surface, and extends to the grooves on both sides of the corresponding LED core particle.

2. The micro-component capable of mass transfer according to claim 1, characterized in that: Under the condition of laser irradiation, the chain layer is less difficult to decompose than the insulating protective layer.

3. The micro-component capable of mass transfer according to claim 1, characterized in that: The cross-sectional area of ​​the chain layer located on the surface of the table is S, and the surface area of ​​the table is A, then A / 100≤S≤A / 50.

4. A method for manufacturing a micro-component capable of mass transfer, characterized in that: The production method comprises the following steps: S01, providing a growth substrate; S02, growing an epitaxial stack, wherein the epitaxial stack includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer sequentially stacked on the surface of the growth substrate; S03, exposing part of the first-type semiconductor layer by etching the epitaxial stack, thereby forming a plurality of grooves and terraces, wherein the grooves and terraces are arranged opposite to each other; S04, depositing a transparent conductive layer on the surface of each of the mesas; S05, generating a plurality of grooves by etching a portion of the epitaxial stack, thereby forming a plurality of epitaxial arrays arranged at intervals; the grooves include horizontal grooves and vertical grooves formed by crossing; S06, depositing a chain layer on the surface of the transparent conductive layer corresponding to each of the epitaxial arrays, and the chain layer extends to the horizontal grooves on both sides of the corresponding epitaxial array; the chain layer includes an insulating material; S07, manufacturing an insulating protective layer, wherein the insulating protective layer is stacked on the surface of each of the grooves and the epitaxial array, covers the chain layer, and exposes a portion of the surface of the mesa and groove corresponding to each of the epitaxial arrays; S08, respectively making a first electrode and a second electrode on the exposed portion of each groove and the exposed portion of the table, thereby obtaining a plurality of LED core particles isolated from each other; S09, manufacturing a sacrificial layer, wherein the sacrificial layer is deposited on the surface of each LED core particle and the sidewall of each groove; S10, manufacturing a bonding layer, wherein the bonding layer covers the sacrificial layer and is embedded in each of the grooves to form a connection with the insulating protection layer; S11, providing a supporting substrate, and bonding each of the LED chips to the supporting substrate; S12, peeling off the growth substrate to expose the chain layer located at the horizontal groove, and simultaneously peeling off the insulating protection layer located at the groove, so that the sacrificial layer connected to the surface of the insulating protection layer is partially exposed; S13, placing the micro-component after the above steps in a corrosion solution, and etching the sacrificial layer with the corrosion solution to form a suspended area, so that the LED core particle is suspended upside down above the support substrate.

5. The method for manufacturing a micro-component capable of mass transfer according to claim 4, characterized in that: Step S11 also includes first thinning the thickness of the chain layer and then etching away the sacrificial layer using a corrosive solution.

6. The method for manufacturing a micro-component capable of mass transfer according to claim 4, characterized in that: Under the condition of laser irradiation, the difficulty of decomposing the chain layer is lower than that of decomposing the insulating protective layer. Therefore, when the growth substrate is peeled off to expose the chain layer at the horizontal groove in step S10, the insulating protective layer at the groove can be peeled off at the same time, so that the sacrificial layer connected to the surface of the insulating protective layer is partially exposed.

7. The method for manufacturing a micro-component capable of mass transfer according to claim 4, characterized in that: The cross-sectional area of ​​the chain layer located on the surface of the table is S, and the surface area of ​​the table is A, then A / 100≤S≤A / 50.

8. A transfer method for realizing mass transfer of the micro-components according to any one of claims 1 to 3, characterized in that: The transfer method includes: using the exposed portion of the chain layer as a chain, and breaking the chain after positioning by a transfer device, thereby realizing the mass transfer of the LED core particles.

9. A display device, characterized in that: The transfer method according to claim 8 is used for manufacturing the same.

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