Light emitting device and display substrate

Abstract

The application relates to a light-emitting device and a display substrate. The light-emitting device comprises at least one light-emitting structure and a first heat-conducting structure in contact with each light-emitting structure, and the first heat-conducting structure is configured to conduct heat generated by the light-emitting structure away. According to the embodiment of the application, the heat generated by the light-emitting structure can be conducted away in time through the first heat-conducting structure, the heat dissipation speed of the light-emitting device can be increased, and the light-emitting efficiency of the light-emitting device is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a light emitting device and display substrate. BACKGROUND

[0002] In the related art, when a light emitting diode (LED) emits light, heat effect will be accompanied, which will cause the light emitting efficiency of the LED to decrease. Therefore, how to improve the heat dissipation performance of the LED is a technical problem to be solved. SUMMARY

[0003] The present application provides a light emitting device and display substrate to solve the problems in the related art.

[0004] According to a first aspect of the embodiments of the present application, a light emitting device is provided, comprising: at least one light emitting structure and a first heat conducting structure, the first heat conducting structure being in contact with each of the light emitting structures, and the first heat conducting structure being configured to conduct heat generated by the light emitting structure away.

[0005] In one embodiment, the light emitting device further comprises a substrate, and the light emitting structure is located between the substrate and the first heat conducting structure.

[0006] The light emitting structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer, the first semiconductor layer is located on the substrate, the light emitting layer is located on a side of the first semiconductor layer away from the substrate, and the second semiconductor layer is located on a side of the light emitting layer away from the first semiconductor layer.

[0007] The substrate comprises a non-light emitting area.

[0008] The first heat conducting structure is located on a side of the second semiconductor layer away from the light emitting layer, and a normal projection of the first heat conducting structure on the substrate is located in the non-light emitting area.

[0009] In one embodiment, the first heat conducting structure comprises a heat conducting layer, and the heat conducting layer is located on a side of the second semiconductor layer away from the light emitting layer.

[0010] In one embodiment, the light emitting device further comprises a first insulating layer and a reflective layer, the first insulating layer is located on a side of the heat conducting layer away from the second semiconductor layer, and the reflective layer is located on a side of the first insulating layer away from the heat conducting layer.

[0011] The first heat conducting structure further comprises a first pad, the first pad is located on a side of the reflective layer away from the first insulating layer, and the first pad is connected with the heat conducting layer through a via hole on the first insulating layer and a via hole on the reflective layer.

[0012] In one embodiment, the light emitting device comprises two light emitting structures, and the two light emitting structures are connected in series.

[0013] In one embodiment, the light emitting device further comprises a first electrode, a second electrode and a third electrode, and the two light emitting structures are connected in series through the first electrode.

[0014] The two light emitting structures comprise a first light emitting structure and a second light emitting structure, a first semiconductor layer of the first light emitting structure is connected to a first end of the first electrode, and a second semiconductor layer of the second light emitting structure is connected to a second end of the first electrode.

[0015] The second electrode is connected to the second semiconductor layer in the first light emitting structure, and the third electrode is connected to the first semiconductor layer in the second light emitting structure.

[0016] In one embodiment, the light emitting device further comprises a first conductive layer, and the first conductive layer is located between the second light emitting structure and the first insulating layer.

[0017] The substrate further comprises a first light emitting region adjacent to the non-light emitting region, a part of the first conductive layer has a projection on the substrate located in the first light emitting region and connected to the second semiconductor layer in the second light emitting structure, and another part of the first conductive layer has a projection on the substrate located in the non-light emitting region and connected to the second end of the first electrode.

[0018] In one embodiment, the light emitting device further comprises a second insulating layer, and the second insulating layer is located between the first light emitting structure and the second light emitting structure, between the first conductive layer and the substrate, and between the first electrode and the substrate.

[0019] The second insulating layer has a projection on the substrate located in the non-light emitting region, a first end of the second insulating layer is located on a side of the second semiconductor layer in the second light emitting structure away from the substrate, and a second end of the second insulating layer is in contact with the first semiconductor layer of the first light emitting structure.

[0020] The first semiconductor layer in the first light emitting structure comprises a first connecting portion, a projection of the first connecting portion on the substrate does not overlap with a projection of the remaining layers in the first light emitting structure on the substrate except the first semiconductor layer, the first connecting portion is located on a side close to the second light emitting structure, and the first connecting portion is connected to the first end of the first electrode.

[0021] In one embodiment, the light emitting device further comprises a second conductive layer; the second conductive layer is located between the first light emitting structure and the first insulating layer;

[0022] The substrate further comprises a second light emitting region, the second light emitting region is adjacent to the non-light emitting region; a part of the second conductive layer is located in the second light emitting region in the orthographic projection on the substrate, and is connected with the second semiconductor layer in the first light emitting structure, another part of the second conductive layer is located in the non-light emitting region in the orthographic projection on the substrate, and is connected with the second electrode.

[0023] In one embodiment, the light emitting device further comprises a third insulating layer, the third insulating layer is located between the second conductive layer and the first light emitting structure;

[0024] The orthographic projection of the third insulating layer on the substrate is located in the non-light emitting region, and a first end of the third insulating layer is located on a side of the second semiconductor layer in the first light emitting structure away from the substrate, and a second end is in contact with the first semiconductor layer of the first light emitting structure;

[0025] The orthographic projection on the substrate of the remaining layers in the first light emitting structure except the first semiconductor layer is located within the orthographic projection on the substrate of the first semiconductor layer, the first semiconductor layer in the first light emitting structure comprises a support part, the support part is located on a side away from the second light emitting structure, and the orthographic projection on the substrate of the second electrode is located within the orthographic projection on the substrate of the support part.

[0026] In one embodiment, the orthographic projection on the substrate of the remaining layers in the second light emitting structure except the first semiconductor layer is located within the orthographic projection on the substrate of the first semiconductor layer, the first semiconductor layer in the second light emitting structure comprises a second connecting part, the orthographic projection on the substrate of the second connecting part does not overlap with the orthographic projection on the substrate of the remaining layers in the second light emitting structure except the first semiconductor layer; the second connecting part is located on a side away from the first light emitting structure, and the second connecting part is connected with the third electrode.

[0027] In one embodiment, the second electrode and the third electrode are located between the substrate and the first insulating layer;

[0028] The light emitting device further comprises a second pad and a third pad, the second pad is connected with the second electrode through the via on the first insulating layer and the via on the reflective layer, and the third pad is connected with the third electrode through the via on the first insulating layer and the via on the reflective layer.

[0029] In one embodiment, the second insulating layer comprises a hollow portion, and the first electrode contacts the substrate through the hollow portion.

[0030] In one embodiment, the substrate has a thermal conductivity greater than that of the second insulating layer.

[0031] In one embodiment, the light emitting device further comprises a fourth pad, the fourth pad is connected to the first electrode through a via on the first insulating layer and a via on the reflective layer.

[0032] In one embodiment, the light emitting device comprises two light emitting structures, and the two light emitting structures are connected in series.

[0033] The light emitting device further comprises a substrate; each of the light emitting structures comprises a first semiconductor layer, a light emitting layer, and a second semiconductor layer; the first semiconductor layer is on the substrate, the light emitting layer is on a side of the first semiconductor layer away from the substrate, and the second semiconductor layer is on a side of the light emitting layer away from the first semiconductor layer.

[0034] The first heat conducting structure comprises a first electrode; the two light emitting structures comprise a first light emitting structure and a second light emitting structure, the first semiconductor layer of the first light emitting structure is connected to a first end of the first electrode, and the second semiconductor layer of the second light emitting structure is connected to a second end of the first electrode; the first electrode contacts the substrate.

[0035] The substrate comprises a non-light emitting region; a normal projection of the first electrode on the substrate is located in the non-light emitting region.

[0036] In one embodiment, the light emitting device further comprises a first conductive layer; the first conductive layer is on a side of the second light emitting structure away from the substrate.

[0037] The substrate further comprises a first light emitting region adjacent to the non-light emitting region; a part of the first conductive layer has a normal projection on the substrate located in the first light emitting region and connected to the second semiconductor layer in the second light emitting structure, and another part of the first conductive layer has a normal projection on the substrate located in the non-light emitting region and connected to the second end of the first electrode.

[0038] In one embodiment, the light emitting device further comprises a second insulating layer, the second insulating layer is located between the first light emitting structure and the second light emitting structure, between the first conductive layer and the substrate, and between the first electrode and the substrate.

[0039] A normal projection of the second insulating layer on the substrate is located in the non-light emitting region, and a first end of the second insulating layer is located on a side of the second semiconductor layer in the second light emitting structure away from the substrate, and a second end is in contact with the first semiconductor layer of the first light emitting structure;

[0040] A normal projection of the remaining layers in the first light emitting structure except the first semiconductor layer on the substrate is located in a normal projection of the first semiconductor layer on the substrate, the first semiconductor layer in the first light emitting structure includes a first connecting part, a normal projection of the first connecting part on the substrate does not overlap with a normal projection of the remaining layers in the first light emitting structure except the first semiconductor layer on the substrate, the first connecting part is located on a side close to the second light emitting structure, and the first connecting part is connected with the first end of the first electrode;

[0041] The second insulating layer includes a hollow part, and the first electrode is in contact with the substrate through the hollow part.

[0042] In an embodiment, the light emitting device includes two light emitting structures, and the two light emitting structures are connected in series.

[0043] The light emitting device further includes a substrate, a first insulating layer and a reflective layer, each of the light emitting structures includes a first semiconductor layer, a light emitting layer and a second semiconductor layer, the first semiconductor layer is located on the substrate, the light emitting layer is located on a side of the first semiconductor layer away from the substrate, and the second semiconductor layer is located on a side of the light emitting layer away from the first semiconductor layer.

[0044] The first insulating layer is located on a side of the light emitting structure away from the substrate, and the reflective layer is located on a side of the first insulating layer away from the substrate.

[0045] The first heat conducting structure includes a first electrode and a fourth pad, the two light emitting structures include a first light emitting structure and a second light emitting structure, the first semiconductor layer of the first light emitting structure is connected with the first end of the first electrode, and the second semiconductor layer of the second light emitting structure is connected with the second end of the first electrode.

[0046] The substrate includes a non-light emitting region, a normal projection of the first electrode and the fourth pad on the substrate is located in the non-light emitting region, and the fourth pad is connected with the first electrode through a via hole on the first insulating layer and a via hole on the reflective layer.

[0047] According to a second aspect of the embodiment of the present application, a display substrate is provided, including a driving back plate and the light emitting device described above.

[0048] The driving back plate includes a second heat conducting structure.

[0049] The first heat-conductive structure of the light-emitting device is in contact with the second heat-conductive structure of the driving backplate.

[0050] According to the above embodiment, since the light-emitting device comprises the first heat-conductive structure in addition to the light-emitting structure, the first heat-conductive structure is in contact with each light-emitting structure, and the first heat-conductive structure is configured to conduct the heat generated by the light-emitting structure away, so that the heat generated by the light-emitting structure can be conducted away in time through the first heat-conductive structure, the heat dissipation speed of the light-emitting device can be increased, and the light-emitting efficiency of the light-emitting device can be improved.

[0051] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present application. BRIEF DESCRIPTION OF DRAWINGS

[0052] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and serve to explain the principles of the present application, together with the description.

[0053] Figure 1 is a structural schematic diagram of a light-emitting device according to an embodiment of the present application.

[0054] Figure 2 is Figure 1 is a sectional view along the sectional line AA'.

[0055] Figure 3 is a structural schematic diagram of another light-emitting device according to an embodiment of the present application.

[0056] Figure 4 is a structural schematic diagram of a light-emitting device according to an embodiment of the present application.

[0057] Figure 5 is Figure 4 is a sectional view along the sectional line AA'. DETAILED DESCRIPTION

[0058] The exemplary embodiments will be described in detail herein below with reference to the drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of apparatuses and methods consistent with some aspects of the present application as detailed in the appended claims.

[0059] In the related art, the light emitting area of a light emitting diode (LED) is relatively large, and under the premise that the light emitting brightness is determined, the current required for driving the LED to emit light is also determined, and the large light emitting area will inevitably result in a small current density. When the LED works under a small current density, the light emitting efficiency of the LED is relatively low.

[0060] The inventor realizes that, in order to improve the light emitting efficiency of the LED, the LED needs to work under a high current density, and then the light emitting area of the LED needs to be reduced.

[0061] However, if the size of the LED is directly reduced, due to the side wall effect existing at the edge of the LED, when the size of the LED is reduced, the side wall effect still exists and will result in an increase in the proportion of the failure area caused by the side wall effect; in addition, the reduction of the light emitting area will inevitably result in an increase in the thermal effect of the LED, and the thermal effect will result in a decrease in the light emitting efficiency of the LED. Therefore, on the basis of the reduction of the light emitting area, it is necessary to consider how to avoid the negative influence of the increase in the side wall effect and improve the heat dissipation performance of the LED.

[0062] To solve the above technical problems, the embodiment of the present application provides a light emitting device and a display substrate, which can increase the heat dissipation speed of the light emitting device, improve the heat dissipation performance of the light emitting device, and further improve the light emitting efficiency of the light emitting device.

[0063] As shown in Figure 1 and Figure 2 shown, the embodiment of the present application provides a light emitting device. Wherein, Figure 2 for Figure 1 a cross-sectional view along the cross-sectional line AA'. The light emitting device, as shown in Figures 1-2 , comprises at least one light emitting structure 11 and a first heat conduction structure 12, the first heat conduction structure 12 is in contact with each light emitting structure 11, and the first heat conduction structure 12 is configured to conduct the heat generated by the light emitting structure 11 out.

[0064] In the embodiment, since the light emitting device comprises not only the light emitting structure but also the first heat conduction structure, the first heat conduction structure is in contact with each light emitting structure, and the first heat conduction structure is configured to conduct the heat generated by the light emitting structure out, so that the heat generated by the light emitting structure can be conducted out in time through the first heat conduction structure, the heat dissipation speed of the light emitting device can be increased, and the light emitting efficiency of the light emitting device can be further improved.

[0065] The above briefly introduces the light emitting device provided by the embodiment of the present application, and the following will introduce the light emitting device provided by the embodiment of the present application in detail.

[0066] The embodiment of the present application also provides a light emitting device. The light emitting device, as shown in Figure 1 and Figure 2As shown, the light emitting device includes a substrate 13, two light emitting structures 11, a first heat conducting structure 12, a first electrode 14, a second electrode 15, a third electrode 16, a first conductive layer 17, a second conductive layer 18, a first insulating layer 19, a second insulating layer 21, a third insulating layer 22, a reflective layer 23, a second pad 24 and a third pad 25.

[0067] In the embodiment, the material of the substrate 13 is sapphire. The main component of sapphire is aluminum oxide (Al203). Of course, in other embodiments, the material of the substrate 13 can also be silicon carbide (SiC), gallium nitride (GaN) or silicon.

[0068] In the embodiment, the thermal conductivity of the substrate 13 can be 40 W / m.C, but is not limited thereto.

[0069] In the embodiment, as shown, Figure 2 The two light emitting structures 11 are located between the substrate 13 and the first heat conducting structure 12. Each light emitting structure 11 includes a first semiconductor layer 111, a superlattice layer 112, a first semiconductor layer 113, a light emitting layer 114, an electron blocking layer 115 and a second semiconductor layer 116. Among them, the first semiconductor layer 111 and the first semiconductor layer 113 are one of P-type semiconductor layer and N-type semiconductor layer, and the second semiconductor layer 116 is the other of P-type semiconductor layer and N-type semiconductor layer. In the embodiment, the first semiconductor layer 111 and the first semiconductor layer 113 are N-type semiconductor layers, and the second semiconductor layer 116 is a P-type semiconductor layer.

[0070] In the embodiment, the thermal conductivity of the first semiconductor layer 111 and the thermal conductivity of the first semiconductor layer 113 can be 130 W / m.C. The thermal conductivity of the light emitting layer 114 can be 3.47 x 10 -4 W / m.C, and the thermal conductivity of the second semiconductor layer 116 can be 130 W / m.C.

[0071] In the embodiment, as shown, Figure 2 The first semiconductor layer 111 is located on the substrate 13, the superlattice layer 112 is located on the side of the first semiconductor layer 111 away from the substrate 13, and the first semiconductor layer 113 is located on the side of the superlattice layer 112 away from the first semiconductor layer 111. The material of the superlattice layer 112 can be GaN or InGaN, but is not limited thereto. The superlattice layer 112 is configured to improve the lattice matching between the first semiconductor layer 111 and the first semiconductor layer 113, and to reduce or prevent the propagation from the defect substrate 13, the first semiconductor layer 111 to the first semiconductor layer 113, so that the dysfunction of the light emitting device can be avoided.

[0072] In the embodiment, as shown, Figure 2As shown, the light-emitting layer 114 is located on the side of the first semiconductor layer 113 away from the substrate. The light-emitting layer 114 may include a multiple quantum well structure. For example, the multiple quantum well structure may be a periodic structure with alternating GaN (gallium nitride) and InGaN (gallium indium nitride), but is not limited thereto.

[0073] In this embodiment, as Figure 2 As shown, the electron blocking layer 115 is located on the side of the light-emitting layer 114 away from the first semiconductor layer 113, and the second semiconductor layer 116 is located on the side of the light-emitting layer 114 away from the first semiconductor layer. The electron blocking layer 115 is configured to prevent electrons in the light-emitting layer 114 from escaping to the second semiconductor layer 116, which can improve the luminous efficiency.

[0074] In this embodiment, as Figure 2 As shown, the two light-emitting structures 11 include a first light-emitting structure 11A and a second light-emitting structure 11B. The first light-emitting structure 11A and the second light-emitting structure 11B are connected in series with the first electrode 14 through a first conductive layer 17. The light-emitting color of the first light-emitting structure 11A and the light-emitting color of the second light-emitting structure 11B may be the same.

[0075] In this embodiment, as Figure 1 and Figure 2 As shown, the substrate 13 includes a first light-emitting region E1, a second light-emitting region E2, and a non-light-emitting region E3. The first light-emitting region E1 and the second light-emitting region E2 are adjacent to the non-light-emitting region E3, respectively. In this embodiment, the first light-emitting region E1 is the light-emitting region corresponding to the second light-emitting structure 11B, and the second light-emitting region E2 is the light-emitting region corresponding to the first light-emitting structure 11A. The area of ​​the first light-emitting region E1 is smaller than the area of ​​the second semiconductor layer 116 in the second light-emitting structure 11B, and the area of ​​the second light-emitting region E2 is smaller than the area of ​​the second semiconductor layer 116 in the first light-emitting structure 11A.

[0076] In this embodiment, as Figure 2 As shown, the second insulating layer 21 is located between the first light-emitting structure 11A and the second light-emitting structure 11B, between the first conductive layer 17 and the substrate 13, and between the first electrode 14 and the substrate 13.

[0077] In this embodiment, as Figure 2 As shown, the orthogonal projection of the second insulating layer 21 on the substrate 13 is located in the non-light-emitting region E3, and the first end of the second insulating layer 21 is located on the side of the second semiconductor layer 116 in the second light-emitting structure 11B away from the substrate 13, and the second end is in contact with the first semiconductor layer 111 of the first light-emitting structure 11A.

[0078] In this embodiment, the thermal conductivity of the second insulating layer 21 may be 2.33 W / mC, but is not limited thereto.

[0079] In the embodiment, as shown in Figure 2 The first conductive layer 17 is located on the side of the second light emitting structure 11B away from the substrate 13. A part of the first conductive layer 17 has a projection on the substrate 13 in the first light emitting region E1 and is connected with the second semiconductor layer 116 in the second light emitting structure 11B, and another part of the first conductive layer 17 has a projection on the substrate 13 in the non-light emitting region E3 and is connected with the second end of the first electrode 14.

[0080] In the embodiment, the material of the first conductive layer 17 can be a transparent conductive material, for example, the material of the first conductive layer 17 can be ITO (indium tin oxide), but is not limited thereto.

[0081] In the embodiment, as shown in Figure 2 The area where the first conductive layer 17 contacts the second semiconductor layer 116 in the second light emitting structure 11B is smaller than the area of the second semiconductor layer 116 in the second light emitting structure 11B, so that the light emitting area of the second light emitting structure 11B can be reduced without reducing the size of the light emitting device, thereby avoiding causing the side wall effect.

[0082] In the embodiment, as shown in Figure 2 The first semiconductor layer 111 of the first light emitting structure 11A is connected with the first end of the first electrode 14, and the second semiconductor layer 116 of the second light emitting structure 11B is connected with the second end of the first electrode 14 through the first conductive layer 17.

[0083] In the embodiment, as shown in Figure 2 The rest of the layers in the first light emitting structure 11A except the first semiconductor layer 111 have a projection on the substrate 13 within the projection of the first semiconductor layer 111 on the substrate 13, the first semiconductor layer 111 in the first light emitting structure 11A includes a first connecting part 1111, the projection of the first connecting part 1111 on the substrate 13 does not overlap with the projection of the rest of the layers in the first light emitting structure 11A except the first semiconductor layer 111 on the substrate 13, the first connecting part 1111 is located on the side of the first semiconductor layer 111 close to the second light emitting structure 11B, and the first connecting part 1111 is connected with the first end of the first electrode 14.

[0084] In the embodiment, as shown in Figure 2 The third insulating layer 22 is located between the second conductive layer 18 and the first light emitting structure 11A. The third insulating layer 22 has a projection on the substrate 13 in the non-light emitting region E3, and the first end of the third insulating layer 22 is located on the side of the second semiconductor layer 116 in the first light emitting structure 11A away from the substrate 13, and the second end contacts the first semiconductor layer 111 of the first light emitting structure 11A.

[0085] In the present embodiment, the thermal conductivity of the third insulating layer 22 can be 2.33 W / m.C, but is not limited thereto.

[0086] In the present embodiment, as shown in FIG. 1, the second conductive layer 18 is located between the first light emitting structure 11A and the first insulating layer 19. A portion of the second conductive layer 18 has a normal projection on the substrate 13 located in the second light emitting region E2 and is connected with the second semiconductor layer 116 in the first light emitting structure 11A, and another portion of the second conductive layer 18 has a normal projection on the substrate 13 located in the non-light emitting region E3 and is connected with the second electrode 15. Figure 2

[0087] In the present embodiment, the area of the second conductive layer 18 in contact with the second semiconductor layer 116 in the first light emitting structure 11A is smaller than the area of the second semiconductor layer 116, so that the light emitting area of the first light emitting structure 11A can be reduced without reducing the size of the light emitting device.

[0088] In the present embodiment, the material of the second conductive layer 18 can be a transparent conductive material, for example, the material of the second conductive layer 18 can be ITO (indium tin oxide), but is not limited thereto.

[0089] In the present embodiment, the thermal conductivity of the first conductive layer 17 and the second conductive layer 18 can be 6 W / m.C, but is not limited thereto.

[0090] In the present embodiment, as shown in FIG. 1, the second electrode 15 is connected with the second semiconductor layer 116 in the first light emitting structure 11A. The second electrode 15 is a positive electrode. The normal projection on the substrate 13 of the layers in the first light emitting structure 11A other than the first semiconductor layer 111 is located within the normal projection on the substrate 13 of the first semiconductor layer 111, the first semiconductor layer 111 in the first light emitting structure 11A includes a support portion 1112 located on the side of the first semiconductor layer 111 away from the second light emitting structure 11B, and the normal projection on the substrate 13 of the second electrode 15 is located within the normal projection on the substrate 13 of the support portion 1112. Figure 2

[0091] In the present embodiment, as shown in FIG. 1, the second electrode 15 is connected with the second semiconductor layer 116 in the first light emitting structure 11A. The second electrode 15 is a positive electrode. The normal projection on the substrate 13 of the layers in the first light emitting structure 11A other than the first semiconductor layer 111 is located within the normal projection on the substrate 13 of the first semiconductor layer 111, the first semiconductor layer 111 in the first light emitting structure 11A includes a support portion 1112 located on the side of the first semiconductor layer 111 away from the second light emitting structure 11B, and the normal projection on the substrate 13 of the second electrode 15 is located within the normal projection on the substrate 13 of the support portion 1112. Figure 1 ​​As shown, the third electrode 16 is connected with the first semiconductor layer 111 in the second light emitting structure 11B. The third electrode 16 is a negative electrode. The orthographic projection of the rest of layers in the second light emitting structure 11B on the substrate 13 is within the orthographic projection of the first semiconductor layer 111 on the substrate 13, the first semiconductor layer 111 in the second light emitting structure 11B includes a second connecting part 1113, the orthographic projection of the second connecting part 1113 on the substrate 13 does not overlap with the orthographic projection of the rest of layers in the second light emitting structure 11B on the substrate 13. The second connecting part 1113 is located at the side of the first semiconductor layer 111 away from the first light emitting structure 11A, and the second connecting part 1113 is connected with the third electrode 16. The orthographic projection of the third electrode 16 on the substrate 13 is within the orthographic projection of the second connecting part 1113 on the substrate 13.

[0092] In the embodiment, as shown in Figure 2 With Figure 1 As shown, the first heat conducting structure 12 is in contact with the first light emitting structure 11A and the second light emitting structure 11B respectively, and is located at the side of the second semiconductor layer 116 away from the light emitting layer 114, the orthographic projection of the first heat conducting structure 12 on the substrate 13 is located in the non-light emitting area E3. The first heat conducting structure 12 is configured to conduct the heat generated by the first light emitting structure 11A and the second light emitting structure 11B away.

[0093] In the embodiment, as shown in Figure 2 With Figure 2 As shown, the first heat conducting structure 12 includes a heat conducting layer 121. The heat conducting layer 121 is located at the side of the second semiconductor layer 116 away from the light emitting layer 114, and is used to conduct the heat generated by the light emitting layer 114 away.

[0094] In the embodiment, the material of the heat conducting layer 121 is the same as the material of the first conductive layer 17 and the material of the second conductive layer 18, which is a transparent conductive material, for example, ITO. In this way, the light emitting efficiency of the light emitting device can not be affected. The heat conducting layer 121 can be in the same layer as the first conductive layer 17 and the second conductive layer 18, and is prepared by the same process. In this way, one patterning process can be saved, and cost can be saved.

[0095] In the embodiment, as shown in Figure 2 As shown, the first insulating layer 19 is located at the side of the heat conducting layer 121 away from the second semiconductor layer 116, and covers the substrate 13, the two light emitting structures 11, the first heat conducting structure 12, the first electrode 14, the second electrode 15, the third electrode 16, the first conductive layer 17 and the second conductive layer 18. The first insulating layer 19 is used to protect the two light emitting structures 11, the first heat conducting structure 12, the first electrode 14, the second electrode 15, the third electrode 16, the first conductive layer 17 and the second conductive layer 18.

[0096] In the embodiment, the thermal conductivity of the first insulating layer 19 can be 2.33 W / m.C, but is not limited thereto.

[0097] In the embodiment, as shown in FIG. 1, the first heat-conducting structure 12 further includes a first pad 122. The first pad 122 is located on the side of the reflective layer 23 away from the first insulating layer 19, and the first pad 122 is connected with the heat-conducting layer 121 through the via hole on the first insulating layer 19 and the via hole 231 on the reflective layer 23. Figure 1 In the embodiment, the thermal conductivity of the reflective layer 23 can be 4.95 W / m.C, but is not limited thereto.

[0098] In the embodiment, as shown in FIG. 1, the first heat-conducting structure 12 further includes a first conductive part 123. A part of the first conductive part 123 is located in the via hole on the first insulating layer 19 and the via hole 231 on the reflective layer 23, and another part of the first conductive part 123 is located on the side of the reflective layer 23 away from the first insulating layer 19 and connected with the first pad 122, i.e., the first pad 122 is connected with the heat-conducting layer 121 through the first conductive part 123. In this way, the first heat-conducting structure 12 can conduct the heat generated by the light-emitting structure 11 away.

[0099] Figure 1

[0100] In the embodiment, as shown in FIG. 1, the first heat-conducting structure 12 further includes a first conductive part 123. A part of the first conductive part 123 is located in the via hole on the first insulating layer 19 and the via hole 231 on the reflective layer 23, and another part of the first conductive part 123 is located on the side of the reflective layer 23 away from the first insulating layer 19 and connected with the first pad 122, i.e., the first pad 122 is connected with the heat-conducting layer 121 through the first conductive part 123. In this way, the first heat-conducting structure 12 can conduct the heat generated by the light-emitting structure 11 away. Figure 1

[0101] In the embodiment, as shown in FIG. 1, the first heat-conducting structure 12 further includes a first conductive part 123. A part of the first conductive part 123 is located in the via hole on the first insulating layer 19 and the via hole 231 on the reflective layer 23, and another part of the first conductive part 123 is located on the side of the reflective layer 23 away from the first insulating layer 19 and connected with the first pad 122, i.e., the first pad 122 is connected with the heat-conducting layer 121 through the first conductive part 123. In this way, the first heat-conducting structure 12 can conduct the heat generated by the light-emitting structure 11 away. Figure 1 In the embodiment, as shown in FIG. 1, the first heat-conducting structure 12 further includes a first conductive part 123. A part of the first conductive part 123 is located in the via hole on the first insulating layer 19 and the via hole 231 on the reflective layer 23, and another part of the first conductive part 123 is located on the side of the reflective layer 23 away from the first insulating layer 19 and connected with the first pad 122, i.e., the first pad 122 is connected with the heat-conducting layer 121 through the first conductive part 123. In this way, the first heat-conducting structure 12 can conduct the heat generated by the light-emitting structure 11 away.

[0102] Figure 2 In the embodiment, as shown in FIG. 1, the first heat-conducting structure 12 further includes a first conductive part 123. A part of the first conductive part 123 is located in the via hole on the first insulating layer 19 and the via hole 231 on the reflective layer 23, and another part of the first conductive part 123 is located on the side of the reflective layer 23 away from the first insulating layer 19 and connected with the first pad 122, i.e., the first pad 122 is connected with the heat-conducting layer 121 through the first conductive part 123. In this way, the first heat-conducting structure 12 can conduct the heat generated by the light-emitting structure 11 away. Figure 1 In the embodiment, as shown in FIG. 1, the first heat-conducting structure 12 further includes a first conductive part 123. A part of the first conductive part 123 is located in the via hole on the first insulating layer 19 and the via hole 231 on the reflective layer 23, and another part of the first conductive part 123 is located on the side of the reflective layer 23 away from the first insulating layer 19 and connected with the first pad 122, i.e., the first pad 122 is connected with the heat-conducting layer 121 through the first conductive part 123. In this way, the first heat-conducting structure 12 can conduct the heat generated by the light-emitting structure 11 away.

[0103] Figure 1 ​​​​​As shown, the third pad 25 is connected with the third electrode 16 through the via on the first insulating layer 19 and the via 233 on the reflecting layer 23.

[0104] In the embodiment, as shown in FIG. 1, the light emitting device further comprises a third conductive part 27. A part of the third conductive part 27 is located in the via on the first insulating layer 19 and the via 233 on the reflecting layer 23, and another part of the third conductive part 27 is located on the side of the reflecting layer 23 away from the first insulating layer 19 and connected with the third pad 25, i.e. the third pad 25 is connected with the third electrode 16 through the third conductive part 27. In this way, the third pad 25 can conduct the heat generated by the second light emitting structure 11B away, improving the heat dissipation performance of the light emitting device. Figure 2 Figure 3 As shown, the light emitting device further comprises a third conductive part 27. A part of the third conductive part 27 is located in the via on the first insulating layer 19 and the via 233 on the reflecting layer 23, and another part of the third conductive part 27 is located on the side of the reflecting layer 23 away from the first insulating layer 19 and connected with the third pad 25, i.e. the third pad 25 is connected with the third electrode 16 through the third conductive part 27. In this way, the third pad 25 can conduct the heat generated by the second light emitting structure 11B away, improving the heat dissipation performance of the light emitting device.

[0105] In other embodiments, the light emitting device can further comprise a fourth pad. The fourth pad can be connected with the first electrode 14 through the via on the first insulating layer 19 and the via on the reflecting layer 23, and the area of the fourth pad can be the same as the area of the first pad 122. In this way, the fourth pad can conduct the heat generated by the first light emitting structure 11A and the second light emitting structure 11B away, increasing the heat dissipation channel and improving the heat dissipation performance of the light emitting device.

[0106] In other embodiments, the second insulating layer 21 can comprise a hollow part, and the first electrode 14 is in contact with the substrate 13 through the hollow part. In this way, the first electrode 14 can conduct the heat generated by the first light emitting structure 11A and the second light emitting structure 11B away through the substrate 13, increasing the heat dissipation channel and the heat dissipation area and improving the heat dissipation performance of the light emitting device.

[0107] In other embodiments, the thermal conductivity of the substrate 13 is greater than the thermal conductivity of the second insulating layer 21. In this way, the heat generated by the first light emitting structure 11A and the second light emitting structure 11B can be conducted away through the second insulating layer 21 and the substrate 13, improving the heat dissipation performance of the light emitting device.

[0108] In the embodiment, by arranging the heat conducting layer 121 on the side of the light emitting structure 11 away from the substrate, the heat conducting layer 121 can conduct the heat generated by the light emitting structure 11 away through the first pad 122, improving the heat dissipation performance of the light emitting device and further improving the light emitting efficiency of the light emitting device.

[0109] As shown, the embodiment of the present application further provides a light emitting device. As shown in FIG. 1, Figure 3 Figure 3 ​​As shown, different from the above embodiment, in the embodiment, the first heat conduction structure 12 does not include the heat conduction layer 121, the first heat conduction structure 12 includes the first electrode 14, the orthographic projection of the first electrode 14 on the substrate 13 is located in the non-light emitting area E3, and the first electrode 14 is in contact with the substrate 13. Thus, the first electrode 14 can conduct the heat generated by the first light emitting structure 11A and the second light emitting structure 11B out through the substrate 13, improving the heat dissipation performance of the light emitting device.

[0110] As shown in the embodiment, the second insulating layer 21 includes a hollow part, and the first electrode 14 is in contact with the substrate 13 through the hollow part. Thus, the first electrode 14 can conduct the heat generated by the first light emitting structure 11A and the second light emitting structure 11B out through the substrate 13, improving the heat dissipation performance of the light emitting device. Figure 4 In the embodiment, the thermal conductivity of the substrate 13 is greater than the thermal conductivity of the second insulating layer 21. Thus, the heat generated by the first light emitting structure 11A and the second light emitting structure 11B can be conducted out through the second insulating layer 21 and the substrate 13, improving the heat dissipation performance of the light emitting device.

[0111] As shown in the embodiment, the second insulating layer 21 includes a hollow part, and the first electrode 14 is in contact with the substrate 13 through the hollow part. Thus, the first electrode 14 can conduct the heat generated by the first light emitting structure 11A and the second light emitting structure 11B out through the substrate 13, improving the heat dissipation performance of the light emitting device.

[0112] Figure 5 As shown in the embodiment, the second insulating layer 21 includes a hollow part, and the first electrode 14 is in contact with the substrate 13 through the hollow part. Thus, the first electrode 14 can conduct the heat generated by the first light emitting structure 11A and the second light emitting structure 11B out through the substrate 13, improving the heat dissipation performance of the light emitting device. Figure 5 Figure 4 As shown in the embodiment, the second insulating layer 21 includes a hollow part, and the first electrode 14 is in contact with the substrate 13 through the hollow part. Thus, the first electrode 14 can conduct the heat generated by the first light emitting structure 11A and the second light emitting structure 11B out through the substrate 13, improving the heat dissipation performance of the light emitting device. Figure 4 Figure 5 As shown in the embodiment, the second insulating layer 21 includes a hollow part, and the first electrode 14 is in contact with the substrate 13 through the hollow part. Thus, the first electrode 14 can conduct the heat generated by the first light emitting structure 11A and the second light emitting structure 11B out through the substrate 13, improving the heat dissipation performance of the light emitting device. Figure 4 In the embodiment, the material of the fourth pad 41 is metal. The thermal conductivity of the fourth pad 41 is greater than the thermal conductivity of the reflective layer 23, which can increase the speed of heat dissipation and improve the heat dissipation performance of the light emitting device.

[0113] As shown in the embodiment, the area of the fourth pad 41 is greater than the area of the first electrode 14, which can increase the heat dissipation area and improve the heat dissipation performance of the light emitting device.

[0114] Figure 4 As shown in the embodiment, the area of the fourth pad 41 is greater than the area of the first electrode 14, which can increase the heat dissipation area and improve the heat dissipation performance of the light emitting device.

[0115] As shown in the embodiment, the area of the fourth pad 41 is greater than the area of the first electrode 14, which can increase the heat dissipation area and improve the heat dissipation performance of the light emitting device. Figure 5 ​ ​​​​​As shown, the light emitting device further comprises a fourth conductive part 42, a part of the fourth conductive part 42 is located in the via hole on the first insulating layer 19 and the via hole 234 on the reflective layer 23, and another part is located on the side of the reflective layer 23 away from the first insulating layer 19 and connected with the fourth pad 41, that is, the fourth pad 41 is connected with the first electrode 14 through the fourth conductive part 42. In this way, the fourth pad 41 can conduct the heat generated by the first light emitting structure 11A and the second light emitting structure 11B away, improving the heat dissipation performance of the light emitting device.

[0116] The embodiment of the present application further provides a display substrate, comprising a driving back plate and the light emitting device of any of the above embodiments.

[0117] In the embodiment, the driving back plate comprises a second heat conduction structure, and the first heat conduction structure 12 of the light emitting device is in contact with the second heat conduction structure of the driving back plate. In this way, the heat generated by the light emitting device can be conducted to the driving back plate through the first heat conduction structure 12 and the second heat conduction structure, which can improve the heat dissipation performance of the light emitting device and further improve the light emitting efficiency of the light emitting device.

[0118] In the embodiment, the material of the second heat conduction structure can be metal. For example, the second heat conduction structure can be a metal block. In this way, the speed of increasing heat dissipation can be increased, and the heat dissipation performance of the light emitting device can be improved.

[0119] It should be noted that the display substrate in the embodiment can be any product or component with display function, such as electronic paper, mobile phone, tablet computer, television, notebook computer, digital photo frame, navigator, etc.

[0120] It should be noted that in the drawings, the size of the layer and the region can be exaggerated for clarity. It should be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer, or intervening layers can also be present. In addition, it should be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or layer, or one or more intervening layers or elements can also be present. In addition, it should be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer or element between the two layers or elements, or one or more intervening layers or elements can also be present. Similar reference numerals indicate similar elements throughout the specification.

[0121] In the present application, the terms "first", "second", etc. are used only for descriptive purposes and are not to be construed as indicating or implying relative importance. The term "a plurality of" means two or more, unless otherwise expressly specified.

[0122] Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. It is intended that the application cover any and all variations of the application that come within the scope of the

[0123] It is understood that the application is not limited to the precise construction herein disclosed and shown in the drawings, and that various modifications and changes can be made by those skilled in the art without departing from the scope of the application. The scope of the application is limited only by the claims that follow.

Claims

1. A light emitting device, characterized by, The light emitting device comprises: at least one light emitting structure and a first heat conducting structure, the first heat conducting structure being in contact with each of the light emitting structures, the first heat conducting structure being configured to conduct heat generated by the light emitting structures away; the light emitting structure comprises two light emitting structures in series; the light emitting device further comprises a substrate; each of the light emitting structures comprises a first semiconductor layer, a light emitting layer, an electron blocking layer and a second semiconductor layer; the first semiconductor layer is on the substrate, the light emitting layer is on a side of the first semiconductor layer away from the substrate, and the second semiconductor layer is on a side of the light emitting layer away from the first semiconductor layer; the electron blocking layer is between the light emitting layer and the second semiconductor layer; the first heat conducting structure comprises a first electrode; the two light emitting structures in series comprise a first light emitting structure and a second light emitting structure, the first semiconductor layer of the first light emitting structure is connected to a first end of the first electrode, and the second semiconductor layer of the second light emitting structure is connected to a second end of the first electrode; the first electrode is in contact with the substrate; the substrate comprises a non-light emitting region; a footprint of the first electrode on the substrate is in the non-light emitting region; the light emitting device further comprises a first conductive layer; the first conductive layer is on a side of the second light emitting structure away from the substrate; the substrate further comprises a first light emitting region adjacent to the non-light emitting region; a part of the first conductive layer has a footprint on the substrate in the first light emitting region and is connected to the second semiconductor layer in the second light emitting structure, and another part of the first conductive layer has a footprint on the substrate in the non-light emitting region and is connected to the second end of the first electrode; the light emitting device further comprises a second insulating layer between the first light emitting structure and the second light emitting structure, between the first conductive layer and the substrate, and between the first electrode and the substrate; a footprint of the second insulating layer on the substrate is in the non-light emitting region, a first end of the second insulating layer is on a side of the second semiconductor layer in the second light emitting structure away from the substrate, and a second end of the second insulating layer is in contact with the first semiconductor layer of the first light emitting structure; a footprint of the rest of the layers in the first light emitting structure except the first semiconductor layer on the substrate is within a footprint of the first semiconductor layer on the substrate; the first semiconductor layer in the first light emitting structure comprises a first connecting portion, a footprint of the first connecting portion on the substrate does not overlap with a footprint of the rest of the layers in the first light emitting structure except the first semiconductor layer on the substrate, the first connecting portion is on a side close to the second light emitting structure, and the first connecting portion is connected to the first end of the first electrode; the second insulating layer comprises a hollow portion, and the first electrode is in contact with the substrate through the hollow portion.

2. The light emitting device of claim 1, wherein, the light emitting device further comprises a substrate; the light emitting structure is between the substrate and the first heat conducting structure; the light emitting structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer; The first semiconductor layer is located on the substrate, the light-emitting layer is located on the side of the first semiconductor layer away from the substrate, and the second semiconductor layer is located on the side of the light-emitting layer away from the first semiconductor layer; The substrate comprises a non-light-emitting region; The first heat-conducting structure is located on the side of the second semiconductor layer away from the light-emitting layer, and the orthographic projection of the first heat-conducting structure on the substrate is located in the non-light-emitting region.

3. The light emitting device of claim 2, wherein, The first heat-conducting structure comprises a heat-conducting layer, and the heat-conducting layer is located on the side of the second semiconductor layer away from the light-emitting layer.

4. The light emitting device of claim 3, wherein, Further comprising a first insulating layer and a reflective layer; the first insulating layer is located on the side of the heat-conducting layer away from the second semiconductor layer, and the reflective layer is located on the side of the first insulating layer away from the heat-conducting layer; The first heat-conducting structure further comprises a first pad, the first pad is located on the side of the reflective layer away from the first insulating layer, and the first pad is connected with the heat-conducting layer through the via hole on the first insulating layer and the via hole on the reflective layer.

5. The light emitting device of claim 4, wherein, Further comprising a first electrode, a second electrode and a third electrode, and two light-emitting structures are connected in series through the first electrode; The two light-emitting structures comprise a first light-emitting structure and a second light-emitting structure, the first semiconductor layer of the first light-emitting structure is connected with the first end of the first electrode, and the second semiconductor layer of the second light-emitting structure is connected with the second end of the first electrode; The second electrode is connected with the second semiconductor layer in the first light-emitting structure, and the third electrode is connected with the first semiconductor layer in the second light-emitting structure.

6. The light emitting device of claim 5, wherein, Further comprising a first conductive layer; the first conductive layer is located between the second light-emitting structure and the first insulating layer; The substrate further comprises a first light-emitting region, the first light-emitting region is adjacent to the non-light-emitting region; a part of the first conductive layer is located in the first light-emitting region, and the orthographic projection of the part of the first conductive layer on the substrate is located in the first light-emitting region and is connected with the second semiconductor layer in the second light-emitting structure; another part of the first conductive layer is located in the non-light-emitting region, and the orthographic projection of the another part of the first conductive layer on the substrate is located in the non-light-emitting region and is connected with the second end of the first electrode.

7. The light emitting device of claim 6, wherein the light emitting device is a light emitting diode. Further comprising a second insulating layer, the second insulating layer is located between the first light-emitting structure and the second light-emitting structure, between the first conductive layer and the substrate, and between the first electrode and the substrate; The orthographic projection of the second insulating layer on the substrate is located in the non-light-emitting region, the first end of the second insulating layer is located on the side of the second semiconductor layer in the second light-emitting structure away from the substrate, and the second end of the second insulating layer is in contact with the first semiconductor layer of the first light-emitting structure; The orthographic projection of the remaining layers of the first light-emitting structure except the first semiconductor layer on the substrate is located within the orthographic projection of the first semiconductor layer on the substrate, the first semiconductor layer in the first light-emitting structure comprises a first connecting portion, the orthographic projection of the first connecting portion on the substrate does not overlap with the orthographic projection of the remaining layers of the first light-emitting structure except the first semiconductor layer on the substrate, the first connecting portion is located on the side close to the second light-emitting structure, and the first connecting portion is connected with the first end of the first electrode.

8. The light emitting device of claim 5, wherein, The second conductive layer is located between the first light-emitting structure and the first insulating layer; The substrate further comprises a second light-emitting region adjacent to the non-light-emitting region; a part of the second conductive layer has a projection on the substrate located in the second light-emitting region and connected with the second semiconductor layer in the first light-emitting structure, and another part of the second conductive layer has a projection on the substrate located in the non-light-emitting region and connected with the second electrode.

9. The light emitting device of claim 8, wherein, The third insulating layer is located between the second conductive layer and the first light-emitting structure; The third insulating layer has a projection on the substrate located in the non-light-emitting region, and a first end of the third insulating layer is located on a side of the second semiconductor layer in the first light-emitting structure away from the substrate, and a second end is in contact with the first semiconductor layer of the first light-emitting structure; The first semiconductor layer in the first light-emitting structure comprises a support part located on a side away from the second light-emitting structure, and the second electrode has a projection on the substrate located in the projection of the support part on the substrate.

10. The light emitting device of claim 5, wherein, The first semiconductor layer in the second light-emitting structure comprises a second connecting part, and a projection of the second connecting part on the substrate does not overlap with a projection of the rest of the layers in the second light-emitting structure except the first semiconductor layer on the substrate; The second connecting part is located on a side away from the first light-emitting structure, and the second connecting part is connected with the third electrode.

11. The light emitting device of claim 5, wherein, The second electrode and the third electrode are located between the substrate and the first insulating layer; The light-emitting device further comprises a second pad and a third pad, the second pad is connected with the second electrode through a via hole on the first insulating layer and a via hole on the reflective layer, and the third pad is connected with the third electrode through a via hole on the first insulating layer and a via hole on the reflective layer.

12. The light emitting device of claim 7, wherein, The thermal conductivity of the substrate is greater than that of the second insulating layer.

13. The light emitting device of claim 5, wherein, The fourth pad is connected with the first electrode through a via hole on the first insulating layer and a via hole on the reflective layer.

14. The light emitting device of claim 1, wherein, Two light-emitting structures are included, and the two light-emitting structures are connected in series. The light-emitting device further comprises a substrate, a first insulating layer and a reflective layer; each light-emitting structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer; the first semiconductor layer is located on the substrate, the light-emitting layer is located on a side of the first semiconductor layer away from the substrate, and the second semiconductor layer is located on a side of the light-emitting layer away from the first semiconductor layer; The first insulating layer is located on a side of the light-emitting structure away from the substrate, and the reflective layer is located on a side of the first insulating layer away from the substrate. The first heat-conducting structure comprises a first electrode and a fourth pad; two of the light-emitting structures comprise a first light-emitting structure and a second light-emitting structure, a first semiconductor layer of the first light-emitting structure is connected to a first end of the first electrode, and a second semiconductor layer of the second light-emitting structure is connected to a second end of the first electrode; The substrate comprises a non-light-emitting region; the first electrode and the fourth pad are located in the non-light-emitting region in orthographic projection on the substrate; and the fourth pad is connected to the first electrode through a via hole on the first insulating layer and a via hole on the reflective layer.

15. A display substrate, comprising: Comprise: a driving backplane and the light-emitting device of any one of claims 1 to 14; the driving backplane comprises a second heat-conducting structure; the first heat-conducting structure of the light-emitting device is in contact with the second heat-conducting structure of the driving backplane.

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