Display device

Abstract

A display device includes a display module including a light emitting element for generating light and a display panel for displaying an image using the light, and a detection module disposed below the display module to receive an external signal. The detection module includes a substrate, a detector disposed on the substrate to detect the external signal, a sensor driving circuit disposed on the substrate to drive the detector, and a light blocking layer for blocking external light from entering the sensor driving circuit and for receiving a light blocking voltage.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0044289, filed on April 10, 2020, which is incorporated herein by reference for all purposes, as fully set forth herein. Technical Field

[0003] The embodiments of the present invention generally relate to a display device, and more specifically, to a display device with improved performance. Background Technology

[0004] Display devices display images to provide various functions for organic communication with users, such as providing information to users or detecting user input. Recently, display devices have included functions for detecting users' fingerprints.

[0005] Fingerprint recognition methods include capacitive methods for detecting capacitance changes formed between electrodes, optical methods for detecting incident light using optical sensors, and ultrasonic methods for detecting vibrations using piezoelectric materials.

[0006] The information disclosed in this background section is only for understanding the background of the inventive concept, and therefore, the above information may contain information that does not constitute prior art. Summary of the Invention

[0007] The applicant recognizes that external light entering the display device can degrade the performance of detection modules (e.g., fingerprint detection modules) included in the display device.

[0008] The detection module and the display device having the detection module, constructed according to the principles and embodiments of the present invention, can prevent the performance of the detection module from being degraded due to external light. For example, a light-shielding layer can prevent external light from entering the sensor driving circuit to which a light-shielding voltage is applied.

[0009] The detection module and the display device having the detection module constructed according to the principles and embodiments of the present invention have a light-shielding member such as a light-shielding layer in the sensor unit to reduce the problem of increased leakage current of transistors included in the sensor drive circuit of the display device due to external light.

[0010] Furthermore, by applying a light-shielding voltage to the light-shielding layer, the potential difference between the control electrode and the input electrode of the transistor can be prevented from increasing to a certain level or higher due to hysteresis. In other words, by preventing the degradation of the transistor's driving performance, the sensing performance of the sensor unit can be improved, and the overall reliability of the detection module can be enhanced.

[0011] Additional features of the inventive concept will be set forth in the description which follows, and these additional features will be partly apparent from the description, or may be learned by practice of the inventive concept.

[0012] According to one aspect of the present invention, a detection module for a display device is provided, the detection module comprising: a substrate; a detector disposed on the substrate for detecting external signals; a sensor driving circuit disposed on the substrate for driving the detector; and a light-shielding layer for preventing external light from entering the sensor driving circuit and for receiving a light-shielding voltage.

[0013] The light-shielding layer can be disposed between the substrate and the sensor driving circuit.

[0014] The sensor driving circuit may include at least one transistor.

[0015] The transistor may include: an active layer; a control electrode disposed on and overlapping the active layer; and an input electrode and an output electrode spaced apart from each other on the control electrode. A light-shielding layer may be disposed between the active layer and the substrate.

[0016] The transistor may include: an active layer; a control electrode disposed below and overlapping the active layer; an input electrode and an output electrode, the input electrode and the output electrode being spaced apart from each other on the control electrode. A light-shielding layer may be disposed between the control electrode and the substrate.

[0017] The light-shielding layer may include an opening that at least partially overlaps with the control electrode.

[0018] The detection module may further include a power line for supplying the light-shielding voltage to the light-shielding layer, wherein the light-shielding voltage is a ground voltage or a substantially constant voltage.

[0019] The light-shielding layer may include: a lower light-shielding layer disposed between the substrate and the sensor driving circuit; and an upper light-shielding layer disposed on the sensor driving circuit.

[0020] At least one of the lower light-shielding layer and the upper light-shielding layer can be configured to receive the light-shielding voltage.

[0021] The sensor driving circuit may include at least one transistor, wherein the detector overlaps with the transistor.

[0022] The upper light-shielding layer may include an opening that overlaps with the location where the output electrode of the transistor and the detector are connected.

[0023] The area of ​​the lower light-shielding layer can be larger than the area of ​​the upper light-shielding layer.

[0024] The detector may include a detection element, which includes a photoelectric conversion element.

[0025] The detection module may further include an optical system comprising multiple transmissive portions and light-absorbing portions provided around the multiple transmissive portions. The detection element may be disposed below the optical system to receive light passing through the multiple transmissive portions.

[0026] According to another aspect of the present invention, a display device includes: a display module including a light-emitting element for generating light and a display panel for displaying an image using the light; and a detection module disposed below the display module to receive external signals. The detection module includes: a substrate; a detector disposed on the substrate to detect the external signals; a sensor driving circuit disposed on the substrate to drive the detector; and a light-shielding layer for preventing external light from entering the sensor driving circuit and for receiving a light-shielding voltage.

[0027] The light-shielding layer can be disposed between the substrate and the sensor driving circuit.

[0028] The sensor driving circuit may include at least one transistor.

[0029] The transistor may include: an active layer; a control electrode disposed on and overlapping the active layer; and an input electrode and an output electrode spaced apart from each other on the control electrode. A light-shielding layer may be disposed between the active layer and the substrate.

[0030] The transistor may include: an active layer; a control electrode disposed below and overlapping the active layer; an input electrode and an output electrode, the input electrode and the output electrode being spaced apart from each other on the control electrode. A light-shielding layer may be disposed between the control electrode and the substrate.

[0031] The light-shielding layer may include: a lower light-shielding layer disposed between the substrate and the sensor driving circuit; and an upper light-shielding layer disposed on the sensor driving circuit.

[0032] The light-shielding voltage can be applied to at least one of the lower light-shielding layer and the upper light-shielding layer.

[0033] The sensor driving circuit may include at least one transistor connected to the detector. The upper light-shielding layer may include an opening corresponding to the location where the output electrode of the transistor and the detector are connected.

[0034] The area of ​​the lower light-shielding layer can be larger than the area of ​​the upper light-shielding layer.

[0035] The detector may include a detection element, which includes a photoelectric conversion element.

[0036] The detection module may further include an optical system comprising multiple transmissive portions and light-absorbing portions provided around the multiple transmissive portions. The detection element and the sensor driving circuit may overlap with the multiple transmissive portions.

[0037] The light-shielding layer comprises a metallic material.

[0038] It will be understood that both the foregoing general description and the following detailed description are exemplary and illustrative, and are intended to provide further explanation of the claimed invention. Attached Figure Description

[0039] The accompanying drawings are included to provide a further understanding of the invention. The drawings are incorporated in and form a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the inventive concept.

[0040] Figure 1A This is a perspective view of an embodiment of a display device constructed according to the principles of the present invention.

[0041] Figure 1B yes Figure 1A An exploded perspective view of the display device.

[0042] Figure 2 This is a cross-sectional view of an embodiment of a display module and a detection module constructed according to the principles of the present invention.

[0043] Figure 3 yes Figure 2 A floor plan of the display panel in the display module.

[0044] Figure 4 yes Figure 1A A partially enlarged cross-sectional view of the display device.

[0045] Figure 5A This is an enlarged cross-sectional view of an embodiment of a sensor unit constructed according to the principles of the present invention.

[0046] Figure 5B This is an enlarged cross-sectional view of an embodiment of a sensor unit constructed according to the principles of the present invention.

[0047] Figure 6 It is shown Figure 5A and Figure 5B The diagram shows the light-shielding layer and power lines.

[0048] Figure 7A yes Figure 5A and Figure 5B The equivalent circuit diagram of a representative sensing pixel.

[0049] Figure 7B It is shown Figure 7A The graph shows the cutoff current characteristics of the transistor.

[0050] Figure 8A This is an enlarged cross-sectional view of an embodiment of a sensor unit constructed according to the principles of the present invention.

[0051] Figure 8B This is an enlarged cross-sectional view of an embodiment of a sensor unit constructed according to the principles of the present invention.

[0052] Figure 9 It is shown Figure 8A The diagram shows the upper light-shielding layer, the lower light-shielding layer, and the power lines.

[0053] Figure 10A This is an enlarged cross-sectional view of an embodiment of a sensor unit constructed according to the principles of the present invention.

[0054] Figure 10B This is an enlarged cross-sectional view of an embodiment of a sensor unit constructed according to the principles of the present invention.

[0055] Figure 11 It is shown Figure 10A The diagram shows the light-shielding layer and power lines. Detailed Implementation

[0056] In the following description, numerous specific details are set forth for illustrative purposes to provide a thorough understanding of various embodiments or implementations of the invention. As used herein, “embodiment” and “implementation” are interchangeable terms as non-limiting examples of apparatuses or methods employing one or more inventive concepts disclosed herein. However, it will be apparent that various embodiments may be practiced without these specific details or by one or more equivalent arrangements. In other instances, well-known structures and apparatuses are shown in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, the various embodiments may be different but are not necessarily exclusive. For example, the specific shape, configuration, and characteristics of an embodiment may be used or implemented in another embodiment without departing from the inventive concept.

[0057] Unless otherwise stated, the illustrated embodiments are to be understood as providing features of different details in some ways in which the inventive concept can be implemented in practice. Therefore, unless otherwise stated, features, components, modules, layers, films, panels, areas and / or aspects of various embodiments (hereinafter individually or collectively referred to as “elements”) may be combined, separated, interchanged and / or rearranged in other ways without departing from the inventive concept.

[0058] The use of crosshairs and / or shading in the accompanying drawings is generally provided to clarify the boundaries between adjacent elements. Thus, unless otherwise stated, the presence or absence of crosshairs or shading does not convey or indicate any preference or requirement for the specific material, material properties, size, scale, commonalities between the elements shown, and / or any other characteristics, properties, etc. Furthermore, the dimensions and relative dimensions of elements may be exaggerated in the drawings for clarity and / or descriptive purposes. When embodiments can be implemented differently, the specific process sequence may be performed differently than the order described. For example, two consecutively described processes may be performed substantially simultaneously or in the reverse order of their description. Additionally, the same reference numerals denote the same elements.

[0059] When a component or layer is referred to as being "on," "connected to," or "bonded to" another component or layer, the component or layer may be directly on, directly connected to, or directly bonded to the other component or layer, or there may be intermediate components or intermediate layers present. However, when a component or layer is referred to as being "directly on," "directly connected to," or "directly bonded to" another component or layer, there are no intermediate components or intermediate layers present. Therefore, the term "connection" can refer to a physical connection, electrical connection, and / or fluid connection with or without intermediate components. Furthermore, the first direction DR1, the second direction DR2, and the third direction DR3 are not limited to the three axes of a Cartesian coordinate system such as the x-axis, y-axis, and z-axis, and can be interpreted in a broader sense. For example, the first direction DR1, the second direction DR2, and the third direction DR3 can be perpendicular to each other, or can represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" can be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0060] Although the terms “first,” “second,” etc., may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, without departing from the teachings of this disclosure, the first element discussed below may be referred to as the second element.

[0061] For descriptive purposes, spatial relative terms such as “below,” “under,” “below,” “down,” “above,” “above,” “higher,” and “side” (e.g., as in “sidewall”) may be used herein to describe the relationship between one element (or more elements) and another element (or more elements) as shown in the accompanying drawings. In addition to the orientations depicted in the drawings, the spatial relative terms are also intended to cover different orientations of the device during use, operation, and / or manufacture. For example, if the device in the drawings is flipped, an element described as “below” or “under” other elements or features would subsequently be oriented “above” other elements or features. Thus, the exemplary term “below” can cover both above and below orientations. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or in other orientations), and thus, the spatial relative terms used herein shall be interpreted accordingly.

[0062] The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well. Furthermore, when used in this specification, the terms “comprises,” “comprising,” and / or “includes,” indicate the presence of the stated features, integrals, steps, operations, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof. It should also be noted that, as used herein, the terms “substantially,” “about,” and other similar terms are used as approximate terms rather than terms of degree, and thus, the terms “substantially,” “about,” and other similar terms are used to explain the inherent biases of measured, calculated, and / or provided values ​​that will be recognized by those skilled in the art.

[0063] In this document, various embodiments are described with reference to cross-sectional views and / or exploded views as schematic diagrams of idealized embodiments and / or intermediate structures. Thus, variations in the shapes illustrated will be expected, for example, due to manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not be construed as limited to the shapes of the specifically shown areas, but will include, for example, deviations in shape due to manufacturing processes. In this way, the areas shown in the drawings may be substantially schematic, and the shapes of these areas may not reflect the actual shapes of the areas of the device, and thus, are not necessarily intended to be limiting.

[0064] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs, to which this disclosure is part. Unless expressly defined herein, terms such as those defined in a general dictionary shall be interpreted as having a meaning consistent with their meaning in the context of the relevant field, and shall not be interpreted in an idealized or overly formalized sense.

[0065] Figure 1A This is a perspective view of an embodiment of a display device constructed according to the principles of the present invention, and Figure 1B yes Figure 1A An exploded perspective view of the display device. Figure 2 This is a cross-sectional view of an embodiment of a display module and a detection module constructed according to the principles of the present invention, and Figure 3 yes Figure 2 A floor plan of the display panel in the display module.

[0066] Reference Figure 1A and Figure 1B The display device DD can be a device activated by an electrical signal. The display device DD can be applied to various embodiments or taken in various forms. For example, in addition to large electronic devices such as televisions, monitors, or billboards, the display device DD can also be used in medium-sized electronic devices such as personal computers, laptop computers, personal digital terminals, car navigation units, game consoles, portable electronic devices, and cameras. Furthermore, these examples are presented only as embodiments, and it is apparent that the display device can be used in other electronic devices without departing from the scope of the inventive concept. In this embodiment, the display device DD is schematically shown as a smartphone.

[0067] The display device DD may include a display surface DS parallel to the first direction DR1 and the second direction DR2, and may display an image IM on the display surface DS facing the third direction DR3. The image IM may include static images and dynamic images. Figure 1AThe image shown here is an example of an observation window and icons for an image IM. The display surface DS on which the image IM is displayed can correspond to the front surface of the display device DD.

[0068] In the illustrated embodiment, the front (or upper) and rear (or lower) surfaces of each component are defined according to the direction shown in the reference image IM. The front and rear surfaces are opposite each other on a third direction DR3, and the normal direction of each of the front and rear surfaces may be parallel to the third direction DR3. Furthermore, the directions indicated by the first direction DR1, the second direction DR2, and the third direction DR3 can be converted to other directions as relative concepts. In the specification, "when viewed in a plane" may mean "when viewed in the third direction DR3".

[0069] The display device DD can detect user input applied from the outside. User input includes various types of external input such as a part of the user's body, light, heat, or pressure. In addition, the display device DD can detect user input applied to the side surface or rear surface of the display device DD, depending on the structure of the display device DD, but is not limited to any one embodiment.

[0070] The display device DD can detect biometric authentication information applied by an external user. A biometric detection area BSA can be provided on the display surface DS of the display device DD. The biometric detection area BSA can be provided over the entire area of ​​the transmission area TA, or it can be provided over some areas of the transmission area TA. That is, Figure 1A and Figure 1B The illustration shows a bioinformatics detection area (BSA) provided within a portion of a transmission region (TA), but the embodiment is not limited to this structure, and the entire transmission region (TA) can be used as the bioinformatics detection area (BSA). Figure 1A and Figure 1B The image exemplarily illustrates a bio-information detection area BSA. However, in addition to the bio-information detection area BSA, various detection areas, such as areas for detecting illuminance and areas for detecting infrared radiation, can be provided on the display surface DS of the display device DD.

[0071] The display device DD may include a window WP, an anti-reflective panel RPP, a display module DM, and a housing HU. In this embodiment, the window WP and the housing HU are combined to form the appearance of the display device DD.

[0072] Window WPs may include optically transparent insulating materials. For example, window WPs may include glass or plastic. Window WPs may have a multilayer or single-layer structure. For example, window WPs may include multiple plastic films bonded together by adhesives, or they may include a glass substrate and plastic films bonded together by adhesives.

[0073] As described above, the front surface of the window WP defines the display surface DS of the display device DD. The transmissive region TA can be an optically transparent region. For example, the transmissive region TA can be a region with a visible light transmittance of approximately 90% or greater.

[0074] The border region BZA can be a region with lower light transmittance compared to the transmission region TA. The border region BZA defines the shape of the transmission region TA. The border region BZA is adjacent to the transmission region TA and can surround the transmission region TA.

[0075] The border area BZA can have a predetermined color. The border area BZA covers the outer area NAA of the display module DM to prevent the outer area NAA from being visually identified from the outside. On the other hand, this is shown as an example, and the border area BZA can be omitted in the window WP.

[0076] An anti-reflective panel RPP can be positioned below the window WP. The anti-reflective panel RPP reduces the reflectivity of external light incident from the upper side of the window WP. In embodiments, the anti-reflective panel RPP can be omitted or may be included in the configuration of the display module DM.

[0077] The display module DM can display image IM, detect user input, and detect the user's biometric authentication information. The display module DM includes a front surface IS, which comprises an active region AA and a peripheral region NAA. The active region AA can be a region activated based on an electrical signal.

[0078] In the illustrated embodiment, the active region AA can be the area where the image IM is displayed, and simultaneously, the area where external input is detected. The transmission region TA can at least overlap with the active region AA. For example, the transmission region TA overlaps with the front surface or at least a portion of the active region AA. Thus, a user can observe the image IM or provide external input through the transmission region TA. However, this is illustrated schematically, and the area in the active region AA where the image IM is displayed and the area where external input is detected can be separated from each other and are not limited to any particular configuration.

[0079] The peripheral region NAA can be the area covered by the border region BZA. The peripheral region NAA is adjacent to the active region AA. The peripheral region NAA can surround the active region AA. The driving circuitry and driving wiring for driving the active region AA can be set in the peripheral region NAA.

[0080] The driver module DC is electrically connected to the display module DM. The driver module DC includes the main circuit board MB and the first flexible circuit film D_FCB.

[0081] The main circuit board MB may include various driving circuits for driving the display module DM and connectors for power supply, etc. A first flexible circuit film D_FCB may be connected to the main circuit board MB and the display module DM. The driving module DC may also include a driving chip DIC mounted on the first flexible circuit film D_FCB. In one embodiment, the driving chip DIC may be directly mounted on the display module DM.

[0082] The housing HU is combined with the window WP. The housing HU and window WP are combined to provide a predetermined internal space. The display module DM can be housed in the internal space. The housing HU can include a material with relatively high rigidity. For example, the housing HU can include multiple frames and / or plates including glass, plastic or metal, or a combination thereof. The housing HU can stably protect the components of the display device DD housed in the internal space from external impacts.

[0083] A battery module or similar device that supplies power to the display device DD for overall operation can be located between the display module DM and the housing HU.

[0084] Reference Figure 1B and Figure 2 The display module DM may include a display panel DU and an input detection unit TU.

[0085] The display panel DU can display an image IM (refer to) based on electrical signals. Figure 1A The input detection unit TU can detect user input applied from the outside. User input can include various types of input provided outside the display device DD. The display panel DU can be a light-emitting display panel and is not particularly limited thereto. For example, the display panel DU can be an organic light-emitting display panel or a quantum dot light-emitting display panel. Externally applied user input can be provided in various forms. For example, user input can include external input (e.g., hovering), which is applied to be close to or spaced at a predetermined distance from the display device DD, and contact through a part of the body such as the user's hand. In addition, user input can take various forms such as force, pressure, temperature, and light.

[0086] The front surface IS of the display module DM can be defined as an active region AA and a peripheral region NAA. The active region AA can be defined as an area for transmitting the image IM provided by the display module DM. According to the illustrated embodiment, a biometric detection region BSA can be included in the active region AA. For example, the biometric detection region BSA can be surrounded by the active region AA. The biometric detection region BSA can be defined as an area for detecting the user's biometric authentication information. As an example, the user's fingerprint can be detected as biometric authentication information in the biometric detection region BSA.

[0087] Reference Figure 2 The display panel DU includes a substrate layer BL, a display circuit layer CL, a display element layer ED, and a packaging layer TFE. The display panel DU can be a flexible display panel. However, the embodiments are not limited to this. For example, the display panel DU can be a foldable display panel that folds based on a folding axis or a rigid display panel.

[0088] The substrate layer BL may include a synthetic resin film. A synthetic resin layer is formed on a working substrate used in manufacturing the display panel DU. Then, a conductive layer and an insulating layer are formed on the synthetic resin layer. When the working substrate is removed, the synthetic resin film is complete as the substrate layer BL. The synthetic resin layer may be a polyimide-based resin layer, and its material is not particularly limited. Alternatively, the substrate layer BL may include a glass substrate, a metal substrate, or an organic / inorganic composite substrate.

[0089] The display circuit layer CL is disposed on the substrate layer BL. The display circuit layer CL includes at least one insulating layer and circuit elements. Hereinafter, the insulating layer included in the display circuit layer CL is referred to as an intermediate insulating layer. The intermediate insulating layer includes at least one intermediate inorganic film and at least one intermediate organic film. The circuit elements include signal lines and driving circuits for pixels, etc. The display circuit layer CL can be formed by a formation process of insulating layers, semiconductor layers, and conductive layers via coating and deposition, and a patterning process of insulating layers, semiconductor layers, and conductive layers via photolithography.

[0090] The display element layer (ED) may include light-emitting elements and pixel-defining films. (See below for further details.) Figure 4 A detailed description of the display element layer (ED).

[0091] The encapsulation layer TFE seals the display element layer ED. The encapsulation layer TFE may include at least one organic film and at least one inorganic film. The inorganic film protects the display element layer ED from moisture / oxygen. The inorganic film may include, but is not limited to, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0092] Reference Figure 3 The display panel DU may include a drive circuit GDC, multiple signal lines SGL, and multiple pixels PX. The display panel DU may also include a pixel pad portion PLD disposed in the peripheral area NAA. The pixel pad portion PLD includes pixel pads D_PD connected to the corresponding signal lines among the multiple signal lines SGL.

[0093] Pixels (PX) are located within the active region (AA). Each pixel (PX) includes an organic light-emitting element (OLED) and a pixel driving circuit connected to the OLED. The driving circuit (GDC), signal line (SGL), pixel pad portion (PLD), and pixel driving circuit can be included. Figure 2The display circuit layer CL is shown in the diagram.

[0094] The driving circuit GDC may include a gate driving circuit. The gate driving circuit generates multiple gate signals (hereinafter referred to as gate signals) and sequentially outputs the gate signals to multiple gate lines (hereinafter referred to as gate lines), described later. The gate driving circuit may also output another control signal to the pixel driving circuit.

[0095] The signal line SGL includes the gate line GL, data line DL, pixel power line PPL, and control signal line CSL. One gate line in the gate line GL is connected to the corresponding pixel PX, and one data line in the data line DL is connected to the corresponding pixel PX. The pixel power line PPL is connected to pixel PX. The control signal line CSL provides control signals to the gate drive circuit. The signal line SGL overlaps with the active region AA and the peripheral region NAA.

[0096] The pixel pad portion PLD is the portion to which the first flexible circuit film D_FCB is connected, and the pixel pads D_PD of the pixel pad portion PLD are connected to the pads corresponding to the first flexible circuit film D_FCB. The pixel pads D_PD can be provided by exposing some wiring disposed on the display circuit layer CL from an insulating layer included in the display circuit layer CL.

[0097] Pixel pads D_PD are electrically connected to the corresponding pixel PX via signal line SGL. Furthermore, the drive circuit GDC can be connected to any one of the pixel pads D_PD.

[0098] Each pixel PX receives a gate signal from its corresponding gate line GL and a data signal from its corresponding data line DL. Additionally, each pixel PX receives a first power voltage from its pixel power line PPL. Each pixel PX may include one or more thin-film transistors, capacitors, and organic light-emitting elements.

[0099] Refer again Figure 2 The input detection unit TU can be directly disposed on the display panel DU. According to one embodiment, the input detection unit TU can be directly disposed on the encapsulation layer TFE. In this specification, "directly disposed" means "formed" through a continuous process, excluding "attached" via an additional adhesive layer. The input detection unit TU can be bonded to the encapsulation layer TFE via an adhesive film disposed on the encapsulation layer TFE, and is not limited to any particular embodiment.

[0100] The input detection unit TU includes detection electrodes, each of which includes a detection pattern and a detection line. The detection pattern and detection line can have a single-layer or multi-layer structure.

[0101] Reference Figure 1B and Figure 2 The display device DD may further include a detection module LSM disposed on the rear surface of the display module DM. The detection module LSM may be disposed on the rear surface of the display module DM concurrently with the biometric detection area BSA. The detection module LSM can detect external information such as biometric authentication information input through the biometric detection area BSA. The detection module LSM can detect biometric authentication information by receiving external signals including the biometric authentication information. The biometric detection area BSA is shown as a portion of the active area AA of the display module DM; however, those skilled in the art will readily understand that the biometric detection area BSA can be applied to the entire active area AA. When the biometric detection area BSA extends to the entire active area AA, the detection module LSM may be arranged corresponding to the active area AA of the display module DM.

[0102] As an example, the detection module LSM can be a light detection module that detects light including biometric authentication information. However, the embodiments are not limited to this. For example, the detection module LSM can be an ultrasonic detection module that detects ultrasound including biometric authentication information. In the following, the case where the detection module LSM is a light detection module will be described as an example.

[0103] The detection module LSM may include a sensor unit SU and an optical system OS. The sensor unit SU may include an identification sensor capable of recognizing the user's biometric authentication information. As an example, the identification sensor may be a fingerprint recognition sensor that recognizes the user's fingerprint.

[0104] The optical system OS can be disposed on the sensor unit SU. The optical system OS receives light including biometric authentication information from the outside and provides the received biometric authentication information to the sensor unit SU. Hereinafter, to distinguish between light including biometric authentication information and external light that does not contain biometric authentication information, the light including biometric authentication information will be referred to as information light. As an embodiment, a structure in which the optical system OS is disposed between the sensor unit SU and the display panel DU is shown, but the location of the optical system OS is not limited to this. For example, the optical system OS can be disposed within the display panel DU.

[0105] The detection module LSM may further include a second flexible circuit film B_FCB and a readout chip ROIC. The readout chip ROIC outputs a sensor drive signal to the sensor unit SU to drive the sensor unit SU, and receives detection signals from the sensor unit SU. The readout chip ROIC is mounted on the second flexible circuit film B_FCB and is electrically connected to the sensor unit SU through the second flexible circuit film B_FCB.

[0106] The detection module LSM also includes an adhesive layer AL provided on the topmost layer of the detection module LSM. The detection module LSM can be fixed to the rear surface of the display panel DU via the adhesive layer AL. As an example, the adhesive layer AL may include an optically transparent adhesive material. Although in Figure 2 The diagram illustrates a structure in which the adhesive layer AL is disposed on the optical system OS, but the location of the adhesive layer AL is not limited to this. For example, when the optical system OS is disposed in the display panel DU, the adhesive layer AL can be disposed on the sensor unit SU.

[0107] Figure 4 yes Figure 1A A partially enlarged cross-sectional view of the display device. Figure 4 The same reference numerals in the figures are used with Figure 2 The components shown are the same or similar to those shown, and their detailed descriptions are omitted to avoid redundancy.

[0108] Reference Figure 4 The display panel DU includes a substrate layer BL, a display circuit layer CL disposed on the substrate layer BL, a display element layer ED, and a packaging layer TFE. The display panel DU may also include functional layers such as an anti-reflective layer and a refractive index control layer.

[0109] The display element layer ED may include a pixel defining film PDL and a light-emitting element OLED. The pixel defining film PDL may include an organic material. The light-emitting element OLED may include a first electrode AE, a light-emitting layer EML, and a second electrode CE. The first electrode AE ​​is disposed on the display circuit layer CL. The pixel defining film PDL is formed on the first electrode AE. An opening is defined in the pixel defining film PDL. The opening of the pixel defining film PDL exposes at least a portion of the first electrode AE. In one embodiment, the pixel defining film PDL may be omitted.

[0110] The emissive layer (EML) can be disposed in the region corresponding to the opening. That is, the EML can be formed separately from each pixel (PX). The EML can include organic and / or inorganic light-emitting materials. The EML can produce a predetermined color of light. For example, the EML can produce at least one of red, green, and blue light. The EML can include quantum dots or quantum rods.

[0111] In this embodiment, an emissive layer EML patterned on a pixel PX basis is exemplarily shown, but the embodiment is not limited thereto. A second electrode CE is disposed on the emissive layer EML. The second electrode CE can be commonly disposed in the pixel PX. An encapsulation layer TFE is disposed on the second electrode CE. Figure 4In this example, the light-emitting element OLED has an organic light-emitting diode structure, but the embodiments are not limited to this. That is, the light-emitting element OLED can have, for example, the structure of inorganic light-emitting diodes, quantum dot light-emitting diodes, and micro light-emitting diodes.

[0112] The detection module LSM is located below the display panel DU and receives light output from the display panel DU to identify biometric authentication information.

[0113] When the display panel DU is operated, light including image information is emitted from the light-emitting layer EML of the display panel DU, and the emitted light is displayed as an image on the display surface DS. When a user touches the display surface DS with their finger, the light is reflected by the finger and provided to the detection module LSM located below the display panel DU.

[0114] When a user's fingerprint FP touches the display surface DS, a difference occurs between the amount of reflected light reflected from the ridges RP of the fingerprint FP and the amount of reflected light reflected from the valleys VP. The detection module LSM can use this difference to identify the user's fingerprint FP.

[0115] The detection module LSM includes a sensor unit SU and an optical system OS.

[0116] The optical system OS includes a transmissive portion TP for transmitting information light Li incident on the detection module LSM, and a light-absorbing portion AP provided around the transmissive portion TP to absorb the information light Li. The optical system OS may include a collimator layer for focusing the information light Li reflected by a finger. The collimator layer may have a structure in which multiple openings or slits are formed, and as an example embodiment, the openings or slits may allow only light with an incident angle within a predetermined angular range to pass through. The aforementioned angular range may vary depending on the width of each of the openings or slits. Here, the openings or slits may be defined as the transmissive portion TP of the optical system OS.

[0117] The light-absorbing portion (AP) can have the property of absorbing light. The light-absorbing portion (AP) can be a colored layer. For example, the light-absorbing portion (AP) can include a material in which light-absorbing particles are dispersed. Alternatively, the light-absorbing portion (AP) can be a layer in which carbon-based pigments are mixed.

[0118] The sensor unit SU is positioned below the optical system OS and receives the information light Li that has passed through the transmission portion TP. In other words, the optical system OS can prevent light other than the information light Li reflected by the finger (i.e., external light Le) from entering the sensor unit SU.

[0119] The sensor unit SU includes a substrate in the form of a substrate BS, a member for blocking light (which may be in the form of a light-shielding layer LBL disposed on the substrate BS), and a sensing layer SL disposed on the light-shielding layer LBL.

[0120] The substrate BS can be an insulating substrate. For example, the substrate BS can be a silicon substrate, a glass substrate, or a plastic substrate.

[0121] A light-shielding layer LBL can be disposed on the upper surface of the substrate BS. The light-shielding layer LBL can prevent external light Le incident from the rear surface of the substrate BS from being provided to the sensing layer SL. As an embodiment, the light-shielding layer LBL may comprise a metallic material with high reflectivity. That is, the light-shielding layer LBL reflects the external light Le incident through the substrate BS to prevent the external light Le from being provided to the sensing layer SL. The light-shielding layer LBL can be provided with a size corresponding to the sensing layer SL. However, the embodiment is not limited to this. For example, the light-shielding layer LBL can be provided to partially correspond to the sensing layer SL.

[0122] The sensing layer SL can be disposed on the light-shielding layer LBL. The optical system OS can be disposed on the sensing layer SL. The sensing layer SL senses the information light Li that has passed through the transmission portion TP of the optical system OS.

[0123] Figure 5A and Figure 5B This is an enlarged cross-sectional view of an embodiment of a sensor unit constructed according to the principles of the present invention. Figure 6 It is shown Figure 5A and Figure 5B The diagram shows the light-shielding layer and power lines.

[0124] Reference Figure 4 and Figure 5A The sensor unit SU includes a substrate BS, a light-shielding layer LBL, and a sensing layer SL. The light-shielding layer LBL is disposed on the substrate BS, and the sensing layer SL is disposed on the light-shielding layer LBL. That is, the light-shielding layer LBL is disposed between the substrate BS and the sensing layer SL.

[0125] The sensing layer SL may include multiple sensing pixels S_PX. The multiple sensing pixels S_PX may be arranged in an array. Each sensing pixel S_PX includes a detector, which may be in the form of a detection element PD, and a sensor driving circuit for driving the detection element PD. A light-shielding layer LBL is disposed between the substrate (substrate BS) and the sensor driving circuit. Specifically, as described below, in Figure 5A In the middle, the light-shielding layer LBL is disposed between the active layer ACL and the substrate (substrate BS); Figure 5B In this process, the light-shielding layer LBL is disposed between the control electrode GE and the substrate (substrate BS).

[0126] The sensor drive circuit can electrically connect the detection element (PD) and external electronic components (e.g., the readout chip ROIC). Figure 2 As shown in the diagram), the sensor drive circuit can supply external power to the detection element PD to control the operation of the detection element PD, or provide the electrical signal generated by the detection element PD to external electronic components.

[0127] The sensing layer SL may also include multiple signal wirings connected to the sensing pixel S_PX. The sensing layer SL may also include a buffer layer BFL and multiple insulating layers L1 to L3. The buffer layer BFL is disposed on the light-shielding layer LBL and may include an insulating material. For example, the buffer layer BFL may include an organic film or an inorganic film. The insulating layers L1 to L3 include a first insulating layer L1, a second insulating layer L2, and a third insulating layer L3 stacked sequentially.

[0128] The sensor driving circuit may include at least one transistor TR_T. The transistor TR_T is connected to the sensing element PD to provide an electrical signal to the sensing element PD. The transistor TR_T controls the operation of the sensing element PD. The transistor TR_T includes an active layer ACL, a control electrode GE, an input electrode IE, and an output electrode OE.

[0129] The active layer ACL is disposed on the buffer layer BFL and covered by the first insulating layer L1. The control electrode GE overlaps with the active layer ACL, and the first insulating layer L1 is disposed between the active layer ACL and the control electrode GE. The second insulating layer L2 is disposed on the control electrode GE. The control electrode GE and the first insulating layer L1 are covered by the second insulating layer L2. The input electrode IE and the output electrode OE are disposed on the second insulating layer L2.

[0130] The input electrode IE and the output electrode OE are spaced apart from each other on a plane. Furthermore, the input electrode IE and the output electrode OE overlap with the active layer ACL. The input electrode IE and the output electrode OE can contact the active layer ACL through vias provided in the first insulating layer L1 and the second insulating layer L2. The transistor TR_T controls the charge transfer in the active layer ACL through the control electrode GE and outputs the electrical signal input from the input electrode IE through the output electrode OE.

[0131] A third insulating layer L3 is disposed on transistor TR_T, and a detection element PD is disposed on the third insulating layer L3. The detection element PD is electrically connected to transistor TR_T. The detection element PD can be connected to the output electrode OE of transistor TR_T. When the sensor driving circuit includes multiple transistors, the detection element PD can be connected to one of the multiple transistors. The detection element PD may include a photodiode. In this case, the detection element PD includes a photodetector layer PSL, a first photodetector electrode E1, and a second photodetector electrode E2. The first photodetector electrode E1 and the second photodetector electrode E2 are spaced apart from each other, and the photodetector layer PSL is located between the first photodetector electrode E1 and the second photodetector electrode E2.

[0132] The first photodetector electrode E1 is disposed on the third insulating layer L3 and can be connected to the output electrode OE of the transistor TR_T through a through-hole provided in the third insulating layer L3. Therefore, the first photodetector electrode E1 can receive electrical signals from the transistor TR_T. The second photodetector electrode E2 can be conductive and transparent. For example, the second photodetector electrode E2 may comprise a transparent conductive oxide. The information light Li provided to the sensing layer SL can pass through the second photodetector electrode E2 and be provided to the photodetector layer PSL. The photodetector layer PSL and the optical system OS (see reference) Figure 4 The transmission portion TP (refer to) Figure 4 ) overlaps, and the transistor TR_T can overlap with the optical system OS (refer to Figure 4 The light absorption portion AP (reference) Figure 4 The information light Li passes through the transmission section TP and is provided to the detection element PD, but the information light Li absorbed by the light absorption section AP cannot be incident on the transistor TR_T.

[0133] The first photodetector electrode E1 and the second photodetector electrode E2 can receive different electrical signals from each other. The second photodetector electrode E2 is connected to a common voltage line to receive a common voltage. The second photodetector electrode E2 can be commonly disposed in the sensing pixel S_PX. That is, the second photodetector electrode E2 of the sensing pixel S_PX can be formed as an electrode. Since the first photodetector electrode E1 and the second photodetector electrode E2 are spaced apart from each other by the photodetector layer PSL, and the photodetector layer PSL is located between the first photodetector electrode E1 and the second photodetector electrode E2, a predetermined electric field can be formed between the first photodetector electrode E1 and the second photodetector electrode E2. The photodetector layer PSL generates an electrical signal by the information light Li incident on the photodetector layer PSL. The photodetector layer PSL can absorb the energy of the incident light to generate a charge. For example, the photodetector layer PSL may include a photosensitive semiconductor material.

[0134] The charge generated in the photodetector layer (PSL) alters the electric field between the first photodetector electrode E1 and the second photodetector electrode E2. The amount of charge generated in the PSL varies depending on whether light is incident on the detection element PD, and the amount and intensity of the light incident on the PD. Therefore, the electric field formed between the first photodetector electrode E1 and the second photodetector electrode E2 can be changed. The detection element PD can obtain the user's fingerprint information by observing the change in the electric field between the first photodetector electrode E1 and the second photodetector electrode E2.

[0135] However, this is shown exemplarily, and the detection element PD may include a phototransistor having a photodetector layer PSL as an active layer. In this case, the detection element PD can detect the amount of current flowing through the phototransistor to obtain fingerprint information. The detection element PD according to embodiments may include various photoelectric conversion elements capable of generating electrical signals in response to changes in light intensity, and is not limited to any one embodiment.

[0136] In addition to optical detection elements that can generate electrical signals in response to changes in light intensity, LSM (Light Detection Module) can also be used depending on the detection object and detection module. Figure 4 The detection method shown in the figure employs various types of detection elements in the detection element PD. For example, an ultrasonic detection element that detects ultrasonic waves and generates an electrical signal, or a piezoelectric element that detects pressure and outputs an electrical signal, can be used as the detection element PD.

[0137] The sensing layer SL also includes a protective layer EC. The protective layer EC is disposed on the sensing element PD to cover the sensing element PD. The protective layer EC may have insulating properties. For example, the protective layer EC may include at least one organic film and / or an inorganic film. The protective layer EC protects the sensing element PD by preventing external moisture, contaminants, or impacts from affecting the sensing element PD. This feature is described illustratively, and the protective layer EC may be omitted in the sensing module LSM.

[0138] The sensing layer SL may also include components for transmitting the light-blocking voltage V. BL ( Figure 7A (As shown) The power supply line PL is supplied to the light-shielding layer LBL, and the connection electrode CNE is electrically connected to the light-shielding layer LBL. The connection electrode CNE can be disposed on the same layer as the input electrode IE and output electrode OE of the transistor TR_T. That is, the connection electrode CNE is disposed on the second insulating layer L2, and can be connected to the light-shielding layer LBL by providing through holes in the buffer layer BFL, the first insulating layer L1, and the second insulating layer L2. However, the location of the connection electrode CNE is not limited to this. The connection electrode CNE can be disposed on the same layer as the control electrode GE.

[0139] A power line PL is disposed on the protective layer EC and electrically connected to the connecting electrode CNE. The power line PL can be connected to the connecting electrode CNE by providing a contact portion CNT that passes through the protective layer EC and the third insulating layer L3. However, the location of the power line PL is not limited to this. For example, the power line PL can be disposed on the same layer as the first photodetector electrode E1. In this case, the power line PL is connected to the connecting electrode CNE by providing a through-hole in the third insulating layer L3 and can be covered by the protective layer EC.

[0140] In addition to the control electrode GE overlapping with the active layer ACL and being located below the active layer ACL, Figure 5B The sensing layer SL shown can be with Figure 5A The sensing layer SL shown has the same structure. That is, Figure 5A The transistor TR_T shown has a top-gate structure, and Figure 5B The transistor TR_B shown has a bottom-gate structure. The control electrode GE of the bottom-gate transistor TR_B is disposed on the buffer layer BFL, and the active layer ACL is disposed on the first insulating layer L1. The input electrode IE and the output electrode OE can be connected to the active layer ACL through vias penetrating the second insulating layer L2.

[0141] exist Figure 5A and Figure 5B In this context, transistors TR_T and TR_B can correspond to the optical system OS (see reference). Figure 4 The light absorption portion AP (reference) Figure 4 The settings and the detection element PD can be configured with the optical system OS (see reference). Figure 4 The transmission portion TP (refer to) Figure 4 The information light Li provided from the outside overlaps. Therefore, some of the information light Li passes through the transmission part TP and is provided to the detection element PD, but some of the information light Li is blocked by the light absorption part AP so that it is not provided to the transistors TR_T and TR_B.

[0142] Reference Figure 6 The substrate BS overlaps with the biometric detection area BSA. The biometric detection area BSA includes a detection area SA that essentially detects biometric authentication information and a non-detection area NSA provided around the detection area SA. A light-shielding layer LBL can be provided on the substrate BS corresponding to the detection area SA.

[0143] like Figure 5A and Figure 5BAs shown, the power line PL is electrically connected to the light-shielding layer LBL. As an example, the power line PL may include a first power line PL1 and a second power line PL2 disposed in the non-detection area NSA. However, the number of power lines PL is not limited to this. The power line PL may include one power line or three or more power lines.

[0144] Reference Figure 6 One end of the first power line PL1 is connected to... Figure 5A and Figure 5B The light-shielding layer LBL shown overlaps in the detection area SA, and one end of the second power line PL2 overlaps with the light-shielding layer LBL in the detection area SA. A first contact portion CNT1 is provided at the portion where the first power line PL1 overlaps with the light-shielding layer LBL, and a second contact portion CNT2 is provided at the portion where the second power line PL2 overlaps with the light-shielding layer LBL. Therefore, the first power line PL1 is connected to the light-shielding layer LBL through the first contact portion CNT1, and the second power line PL2 is connected to the light-shielding layer LBL through the second contact portion CNT2. The connection structure of the first power line PL1 and the second power line PL2 with the light-shielding layer LBL is similar to... Figure 5A and Figure 5B The connection structure of the power line PL shown is similar to that of the light-shielding layer LBL. Therefore, a detailed description of the connection structure is omitted to avoid redundancy.

[0145] The first power pad PD1 is connected to the other end of the first power line PL1, and the second power pad PD2 is connected to the other end of the second power line PL2. The first power pad PD1 and the second power pad PD2 can be connected through the second flexible circuit film B_FCB ( Figure 2 (as shown) connected to the readout chip ROIC ( Figure 2 (As shown in the diagram). Therefore, the first power pad PD1 and the second power pad PD2 can receive the light-shielding voltage V from the readout chip ROIC. BL ( Figure 7A (As shown in the diagram). The first power line PL1 and the second power line PL2 can transmit the light-shielding voltage V received through the first power pad PD1 and the second power pad PD2. BL It is supplied to the light-shielding layer LBL.

[0146] When the detection module LSM( Figure 2 When the size of (as shown) increases, in order to increase the light-blocking voltage V BL The light-shielding voltage V is uniformly applied to the entire area of ​​the light-shielding layer LBL, and the number of power lines PL connected to the light-shielding layer LBL can be increased. Alternatively, as the number of contact points to which the power lines PL and the light-shielding layer LBL are connected increases, the light-shielding voltage V... BL It can be applied evenly to the entire area of ​​the light-shielding layer LBL.

[0147] Figure 7A yes Figure 5A and Figure 5B The equivalent circuit diagram of a representative sensing pixel, and Figure 7B It is shown Figure 7A The graph shows the cutoff current characteristics of the transistor.

[0148] Reference Figure 5A and Figure 7A The sensing pixel S_PX may include a sensor driving circuit SDC and a detection element PD. The sensor driving circuit SDC may include at least one transistor TR_T and a first sensing line SL1 and a second sensing line SL2 connected to the transistor TR_T. Although in Figure 7A The diagram shows a structure in which the sensor driver circuit SDC includes a transistor TR_T as an example, but the number of transistors included in the sensor driver circuit SDC is not limited to this.

[0149] The first sensing line SL1 can be connected to the control electrode GE of transistor TR_T, and the second sensing line SL2 can be connected to the input electrode IE of transistor TR_T. When the first sensing line SL1 receives a sensing signal, transistor TR_T is turned on, and the output of the detection element PD is provided to the second sensing line SL2 through the turned-on transistor TR_T. The second sensing line SL2 can provide the output of the detection element PD to the readout chip ROIC (see reference). Figure 2 The first photodetector electrode E1 of the detection element PD can be connected to the output electrode OE of the transistor TR_T, and the reference voltage V COM It can be provided to the second photodetector electrode E2.

[0150] The light-shielding layer LBL overlaps at least with the transistor TR_T. However, the light-shielding layer LBL can be set across the entire detection area SA. Figure 6 As shown in the diagram, it overlaps with transistor TR_T, sensing element PD, and first sensing line SL1 and second sensing line SL2. The light-blocking voltage V BL The light-shielding voltage V is applied to the light-shielding layer LBL. BL It can be a voltage of approximately 5V to approximately 10V. However, the light-shielding voltage V BL The voltage level is not specifically limited. That is, the shading voltage V BL The voltage level can be set differently depending on the characteristics of the transistor TR_T. For example, the light-blocking voltage V BL It can be a negative voltage, a positive voltage, or a ground voltage.

[0151] Figure 7B It is shown Figure 7A The graph shows the cutoff current characteristics of the transistor. Figure 7BIn the diagram, the first curve G1 shows the voltage-current characteristics of the transistor TR_T in the state where the light-shielding layer LBL is not provided, and the second curve G2 shows the voltage-current characteristics of the transistor TR_T in the state where the light-shielding layer LBL is provided.

[0152] When the light-shielding layer LBL is not provided in the sensor unit SU, the cutoff current of the transistor TR_T is higher than that of the transistor TR_T when the light-shielding layer LBL is provided in the sensor unit SU. In other words, when the light-shielding layer LBL is provided, the leakage current of the transistor TR_T due to external light is reduced.

[0153] By using a constant shading voltage V BL Applying a light-shielding layer LBL prevents the potential difference between the control electrode GE and the input electrode IE of transistor TR_T from increasing to a certain level or higher due to hysteresis. Light-shielding voltage V BL It can be a DC voltage with a substantially constant voltage level.

[0154] When in the sensor drive circuit SDC (such as Figure 7A When multiple transistors are provided in the example shown, the light-shielding voltage V is determined by considering the characteristics of each transistor. BL The optimal voltage level can be set and applied to the light-shielding layer LBL.

[0155] Thus, because of the light-shielding layer LBL, in addition to reducing the leakage current of the transistor TR_T caused by external light, the light-shielding voltage V can also be reduced. BL A light-shielding layer LBL is applied to prevent the driving performance of transistor TR_T from deteriorating. As a result, the sensing performance of sensor unit SU can be improved, and the reliability of sensor unit SU can also be improved.

[0156] Figure 8A and Figure 8B This is an enlarged cross-sectional view of an embodiment of a sensor unit constructed according to the principles of the present invention. Figure 9 It is shown Figure 8A The diagram shows the upper light-shielding layer, lower light-shielding layer, and power lines. However, for... Figure 5A The components shown are similar to or the same as the components shown in the diagram. Figure 8A and Figure 8B The same reference numerals are used in the figures, and their detailed descriptions are omitted to avoid redundancy.

[0157] Reference Figure 4 , Figure 8A and Figure 9The sensor unit SU includes a substrate BS, a lower light-shielding layer LBL1, and a sensing layer SL. The lower light-shielding layer LBL1 is disposed on the substrate BS, and the sensing layer SL is disposed on the lower light-shielding layer LBL1. That is, the lower light-shielding layer LBL1 is disposed between the substrate BS and the sensing layer SL.

[0158] The lower light-shielding layer LBL1 prevents external light Le incident from the rear surface of the substrate BS from being provided to the sensing layer SL. As an example, the lower light-shielding layer LBL1 may comprise a metallic material with high reflectivity or a light-absorbing material that absorbs light. That is, when the lower light-shielding layer LBL1 comprises a metallic material, it reflects the external light Le incident through the substrate BS, thereby preventing the external light Le from being provided to the sensing layer SL. On the other hand, when the lower light-shielding layer LBL1 comprises a light-absorbing material, it may be a colored layer. For example, the light-absorbing material may be a layer in which light-absorbing particles are dispersed.

[0159] The lower light-shielding layer LBL1 can be provided with a size corresponding to the sensing layer SL. However, the embodiments are not limited to this. For example, the lower light-shielding layer LBL1 can be provided to partially overlap with the sensing layer SL.

[0160] The sensing layer SL may include multiple sensing pixels S_PX and an upper light-shielding layer LBL2. Each sensing pixel S_PX may have the same characteristics as... Figure 5A The structure is similar to that of the sensing pixel S_PX shown in the figure.

[0161] The upper light-shielding layer LBL2 can be configured to cover the sensor driving circuit of each sensing pixel S_PX. As an embodiment, the upper light-shielding layer LBL2 can be disposed on the third insulating layer L3. The upper light-shielding layer LBL2 is disposed on the transistor TR_T included in the sensor driving circuit, thereby preventing light incident through the upper surface of the sensor unit SU from incident on the active layer ACL of the transistor TR_T. As an embodiment, the upper light-shielding layer LBL2 can include a metallic material with high reflectivity or a black organic material capable of absorbing light. That is, the upper light-shielding layer LBL2 can include the same material as the lower light-shielding layer LBL1, or it can include a different material than the lower light-shielding layer LBL1.

[0162] The detection element PD can be disposed on the upper light-shielding layer LBL2. A fourth insulating layer L4 can be further disposed between the upper light-shielding layer LBL2 and the detection element PD. The upper light-shielding layer LBL2 and the detection element PD can be insulated by the fourth insulating layer L4. The fourth insulating layer L4 can be omitted.

[0163] A detection element PD is disposed on the fourth insulating layer L4, and the first photodetector electrode E1 of the detection element PD is connected to the output electrode OE of the transistor TR_T through a via provided in the third insulating layer L3 and the fourth insulating layer L4. The upper light-shielding layer LBL2 may be provided with a first opening portion OP_T1 corresponding to the via. When the first opening portion OP_T1 is provided with a size corresponding to the via, since the side surface of the upper light-shielding layer LBL2 is not covered by the fourth insulating layer L4, the side surface of the upper light-shielding layer LBL2 may be connected to the first photodetector electrode E1. When the first opening portion OP_T1 is provided with a size larger than the via, the fourth insulating layer L4 is disposed between the upper light-shielding layer LBL2 and the first photodetector electrode E1. Therefore, the upper light-shielding layer LBL2 and the first photodetector electrode E1 can be electrically insulated by the fourth insulating layer L4.

[0164] like Figure 9 As shown, the first opening portion OP_T1 can have a circular shape on a plane. However, the shape of the first opening portion OP_T1 is not limited to this.

[0165] When the upper part of transistor TR_T is covered by the upper light-shielding layer LBL2, transistor TR_T can correspond to the optical system OS ( Figure 4 The transmission portion TP (shown in the diagram) Figure 4 (As shown in the diagram). That is, the transmission portion TP of the optical system OS can extend to the placement area of ​​the transistor TR_T. As described above, when the transmission portion TP is extended, the area of ​​the detection element PD in each sensing pixel S_PX can also increase correspondingly to the transmission portion TP. In summary, since the transistor TR_T is covered by the upper light-shielding layer LBL2, the area occupied by the detection element PD in each sensing pixel S_PX can be increased, and as a result, the overall sensing performance of the sensor unit SU can be improved.

[0166] The sensing layer SL may also include a connection electrode CNE electrically connected to the lower light-shielding layer LBL1 and a device for transmitting the light-shielding voltage V. BL ( Figure 7A (As shown) The power supply line PL is supplied to the lower light-shielding layer LBL1. The connection electrode CNE can be disposed on the same layer as the input electrode IE and output electrode OE of the transistor TR_T. That is, the connection electrode CNE is disposed on the second insulating layer L2, and can be connected to the lower light-shielding layer LBL1 by providing through holes in the buffer layer BFL, the first insulating layer L1 and the second insulating layer L2.

[0167] The power line PL is disposed on the protective layer EC and electrically connected to the connecting electrode CNE. The power line PL can be connected to the connecting electrode CNE via a contact portion CNT that passes through the protective layer EC, the third insulating layer L3, and the fourth insulating layer L4. However, the location of the power line PL is not limited to this. For example, the power line PL can be disposed on the same layer as the first photodetector electrode E1. In this case, the contact portion CNT can be provided to pass through the third insulating layer L3 and the fourth insulating layer L4.

[0168] The upper light-shielding layer LBL2 can be opened to correspond to the contact portion CNT, allowing the power line PL and the connecting electrode CNE to connect to each other. For example... Figure 9 As shown, when the power line PL includes a first power line PL1 and a second power line PL2, the lower light-shielding layer LBL1 can be connected to the first power line PL1 and the second power line PL2 respectively via a first contact portion CNT1 and a second contact portion CNT2. In this case, the upper light-shielding layer LBL2 can be configured not to overlap with the first contact portion CNT1 and the second contact portion CNT2. That is, the lower light-shielding layer LBL1 can have a larger area than the upper light-shielding layer LBL2, and the lower light-shielding layer LBL1 can have a portion that does not overlap with the upper light-shielding layer LBL2. The first contact portion CNT1 and the second contact portion CNT2 can be provided in the portion of the lower light-shielding layer LBL1 that does not overlap with the upper light-shielding layer LBL2.

[0169] Figure 8B The upper light-shielding layer LBL2 shown can be electrically connected to the lower light-shielding layer LBL1 via the connecting electrode CNE. The upper light-shielding layer LBL2 is connected to the connecting electrode CNE via a lower contact portion CNT_L that penetrates the third insulating layer L3. The upper light-shielding layer LBL2 is connected to the power line PL via an upper contact portion CNT_U that penetrates the fourth insulating layer L4 and the protective layer EC. Therefore, the light-shielding voltage V supplied through the power line PL... BL (Refer to Figure 7A It can be applied to the lower shading layer LBL1 and the upper shading layer LBL2.

[0170] Figure 8B The diagram shows a structure in which the lower light-shielding layer LBL1 and the upper light-shielding layer LBL2 are connected to the power line PL at the same location, but the embodiment is not limited to this. The lower light-shielding layer LBL1 and the upper light-shielding layer LBL2 may contact the power line PL at different locations.

[0171] In addition, although in Figure 8BThe diagram shows a structure in which the lower light-shielding layer LBL1 and the upper light-shielding layer LBL2 are in contact along a power line PL, but the embodiment is not limited to this. That is, the lower light-shielding layer LBL1 and the upper light-shielding layer LBL2 can be connected to different power lines. Furthermore, when the lower light-shielding layer LBL1 and the upper light-shielding layer LBL2 are connected to different power lines, light-shielding voltages with the same voltage level or light-shielding voltages with different voltage levels can be applied to the lower light-shielding layer LBL1 and the upper light-shielding layer LBL2 respectively.

[0172] Figure 8B The light-shielding voltage V is shown. BL The structure is applied to the lower light-shielding layer LBL1 and the upper light-shielding layer LBL2, but the embodiment is not limited to this. That is, the power line PL is connected to at least one of the lower light-shielding layer LBL1 and the upper light-shielding layer LBL2, such that the light-shielding voltage V BL It can be applied to at least one of the lower light-shielding layer LBL1 and the upper light-shielding layer LBL2.

[0173] Figure 10A and Figure 10B This is an enlarged cross-sectional view of an embodiment of a sensor unit constructed according to the principles of the present invention. Figure 11 It is shown Figure 10A The diagram shows the light-shielding layer and power lines. However, for Figure 10A and Figure 10B The components shown are related to Figure 5A , Figure 5B , Figure 8A and Figure 8B The components shown are the same components, using the same reference numerals, and their detailed descriptions are omitted to avoid redundancy.

[0174] Reference Figure 4 , Figure 10A and Figure 11 The sensor unit SU includes a substrate BS, a lower light-shielding layer LBL3, and a sensing layer SL. The lower light-shielding layer LBL3 is disposed on the substrate BS, and the sensing layer SL is disposed on the lower light-shielding layer LBL3. That is, the lower light-shielding layer LBL3 is disposed between the substrate BS and the sensing layer SL.

[0175] The lower light-shielding layer LBL3 prevents external light Le incident from the rear surface of the substrate BS from being provided to the sensing layer SL. As an embodiment, the lower light-shielding layer LBL3 may comprise a metallic material with high reflectivity. That is, the lower light-shielding layer LBL3 reflects the external light Le incident through the substrate BS to prevent the external light Le from being provided to the sensing layer SL. The lower light-shielding layer LBL3 may be provided with a size corresponding to the sensing layer SL. However, the embodiment is not limited to this. For example, the lower light-shielding layer LBL3 may be provided to partially overlap with the sensing layer SL.

[0176] The sensing layer SL includes multiple sensing pixels S_PX. Each sensing pixel S_PX includes a sensor driving circuit and a detection element PD. The sensor driving circuit includes at least one transistor TR_E. The lower light-shielding layer LBL3 may include a second opening portion OP_B corresponding to the at least one transistor TR_E.

[0177] As an example, the transistor TR_E may have a bottom-gate structure. Specifically, the transistor TR_E includes a control electrode GE_E, an active layer ACL, an input electrode IE, and an output electrode OE. The control electrode GE_E is disposed on the buffer layer BFL and is covered by a first insulating layer L1. The active layer ACL is disposed on the first insulating layer L1 and overlaps with the control electrode GE_E, with the first insulating layer L1 located between the active layer ACL and the control electrode GE_E. The control electrode GE_E may have a size corresponding to that of the active layer ACL. For example, the control electrode GE_E may have a size substantially equal to or larger than that of the active layer ACL. Therefore, when viewed from the rear surface of the substrate BS, the active layer ACL and the control electrode GE_E may completely overlap, and the active layer ACL may be obscured by the control electrode GE_E. A second insulating layer L2 is disposed on the active layer ACL. The input electrode IE and the output electrode OE are disposed on the second insulating layer L2.

[0178] The second opening portion OP_B of the lower light-shielding layer LBL3 overlaps with the control electrode GE_E. The second opening portion OP_B of the lower light-shielding layer LBL3 can have a size corresponding to that of the control electrode GE_E. For example, the second opening portion OP_B of the lower light-shielding layer LBL3 can have a size that is substantially equal to or smaller than that of the control electrode GE_E. Therefore, the second opening portion OP_B of the lower light-shielding layer LBL3 can completely overlap with the control electrode GE_E.

[0179] When the sensor driving circuit includes multiple transistors TR_E, the lower light-shielding layer LBL3 may include at least one opening portion that overlaps with at least one of the multiple transistors TR_E. That is, the lower light-shielding layer LBL3 may include multiple opening portions that overlap with each of the multiple transistors TR_E, and may include some of the opening portions that overlap with some of the multiple transistors TR_E.

[0180] like Figure 11 As shown, the second opening portion OP_B can have a circular shape. However, the shape of the second opening portion OP_B is not limited to this. The second opening portion OP_B can have a shape corresponding to the shape of the control electrode GE_E and the active layer ACL.

[0181] The lower light-shielding layer LBL3 can be electrically connected to the power line PL to receive the light-shielding voltage V from the power line PL. BL ( Figure 7A (As shown in the diagram). The connection structure between the lower light-shielding layer LBL3 and the power line PL is the same as that shown in the reference diagram. Figure 5A and Figure 6 The connection structure of the light-shielding layer LBL and the power line PL is similar, so its description is omitted. As an example, the power line PL in the sensing layer SL can be omitted. That is, when the second opening portion OP_B is provided in the lower light-shielding layer LBL3, the light-shielding voltage V... BL It can be omitted from the lower light-shielding layer LBL3.

[0182] Reference Figure 10B The sensing layer SL may further include an upper light-shielding layer LBL4. The upper light-shielding layer LBL4 may be configured to cover the sensor driving circuitry of each sensing pixel S_PX. As an embodiment, the upper light-shielding layer LBL4 may be disposed on the third insulating layer L3. The upper light-shielding layer LBL4 is disposed on the transistor TR_E included in the sensor driving circuitry, thereby preventing light incident through the upper surface of the sensor unit SU from incident on the active layer ACL of the transistor TR_E. As an embodiment, the upper light-shielding layer LBL4 may include a metallic material with high reflectivity or a black organic material capable of absorbing light. That is, the upper light-shielding layer LBL4 may include the same material as the lower light-shielding layer LBL3, or it may include other materials.

[0183] The detection element PD can be disposed on the upper light-shielding layer LBL4. A fourth insulating layer L4 can be further disposed between the upper light-shielding layer LBL4 and the detection element PD. The upper light-shielding layer LBL4 and the detection element PD can be insulated by the fourth insulating layer L4. The fourth insulating layer L4 can be omitted.

[0184] The detection element PD is disposed on the fourth insulating layer L4, and the first photodetector electrode E1 of the detection element PD is connected to the output electrode OE of the transistor TR_E through through-holes provided in the third insulating layer L3 and the fourth insulating layer L4. The upper light-shielding layer LBL4 may be provided with a first opening portion OP_T1 corresponding to the through-hole.

[0185] When the upper portion of transistor TR_E is covered by the upper light-shielding layer LBL4, transistor TR_E can correspond to the optical system OS (see reference). Figure 4 The transmission portion TP (refer to) Figure 4 In other words, the transmission portion TP of the optical system OS can extend to the placement area of ​​the transistor TR_E. As mentioned above, when the transmission portion TP is extended, the area of ​​the detection element PD in each sensing pixel S_PX can also increase correspondingly to the transmission portion TP. In summary, since the transistor TR_E is covered by the upper light-shielding layer LBL4, the area occupied by the detection element PD in each sensing pixel S_PX can be increased, and as a result, the overall sensing performance of the sensor unit SU can be improved.

[0186] The sensing layer SL may also include a power line PL, which is used to electrically connect to the upper light-shielding layer LBL4 to supply a light-shielding voltage V. BL ( Figure 7A (As shown in the diagram). The power line PL is disposed on the protective layer EC and electrically connected to the upper light-shielding layer LBL4. The power line PL can be connected to the upper light-shielding layer LBL4 by providing a contact portion CNT that passes through the protective layer EC and the fourth insulating layer L4. However, the location of the power line PL is not limited to this. For example, the power line PL can be disposed on the same layer as the first photodetector electrode E1. In this case, the contact portion CNT can be provided in the fourth insulating layer L4.

[0187] Figure 10B The diagram shows a structure in which the lower light-shielding layer LBL3 is not connected to the power line PL, but the lower light-shielding layer LBL3 and the upper light-shielding layer LBL4 can be connected to the power line PL together.

[0188] The lower light-shielding layer LBL3 and the upper light-shielding layer LBL4 can be connected to a single power line PL, but the embodiment is not limited to this. That is, the lower light-shielding layer LBL3 and the upper light-shielding layer LBL4 can be connected to different power lines. In addition, when the lower light-shielding layer LBL3 and the upper light-shielding layer LBL4 are connected to different power lines, light-shielding voltages with the same voltage level or light-shielding voltages with different voltage levels can be applied to the lower light-shielding layer LBL3 and the upper light-shielding layer LBL4 respectively.

[0189] The detection module and the display device having the detection module constructed according to the principles and embodiments of the present invention provide a light-shielding member such as a light-shielding layer in the sensor unit to improve the problem of increased leakage current of transistors included in the sensor driving circuit of the display device due to external light.

[0190] Furthermore, by applying a substantially constant light-shielding voltage to the light-shielding layer, the potential difference between the control electrode and the input electrode of the transistor can be prevented from increasing to a certain level or higher due to hysteresis. In other words, by preventing the degradation of the transistor's driving performance, the sensing performance of the sensor unit can be improved, and the overall reliability of the detection module can be enhanced.

[0191] Although specific embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Therefore, the inventive concept is not limited to these embodiments, but is limited to the broader scope of the appended claims and various obvious modifications and equivalent arrangements that will be apparent to those skilled in the art.

Claims

1. A display device, comprising: The display module includes a light-emitting element for generating light and a display panel for displaying an image using the light; and The detection module, located below the display module, receives external signals and includes a detection area for detecting biometric information. The detection module includes: Base; A detector is disposed on the substrate to detect the external signal, and the detector includes a first photodetector electrode, a second photodetector electrode, and a photodetector layer between the first photodetector electrode and the second photodetector electrode; A sensor driving circuit is disposed on the substrate to drive the detector; and A light-shielding layer is used to prevent external light from entering the sensor driving circuit and to receive a light-shielding voltage. The light-shielding layer is provided with a size corresponding to the detection area. The sensor driving circuit includes at least one transistor. The detector is disposed on an insulating layer covering the input and output electrodes of the at least one transistor. One of the first photodetector electrode and the second photodetector electrode is connected to the output electrode through the insulating layer, and The light-shielding layer is disposed below the detector and overlaps with the at least one transistor and the detector.

2. The display device according to claim 1, wherein, The light-shielding layer is disposed between the substrate and the sensor driving circuit.

3. The display device according to claim 1, wherein, The at least one transistor includes: Active layer; A control electrode is disposed on and overlaps with the active layer; and The input electrode and the output electrode are spaced apart from each other on the control electrode. The light-shielding layer is disposed between the active layer and the substrate.

4. The display device according to claim 1, wherein, The at least one transistor includes: Active layer; A control electrode is disposed below the active layer and overlaps with the active layer; The input electrode and the output electrode are spaced apart from each other on the control electrode. The light-shielding layer is disposed between the control electrode and the substrate.

5. The display device according to claim 1, wherein, The light-shielding layer includes: The lower light-shielding layer is disposed between the substrate and the sensor driving circuit; and The upper light-shielding layer is disposed on the sensor driving circuit.

6. The display device according to claim 5, wherein, The light-shielding voltage is applied to at least one of the lower light-shielding layer and the upper light-shielding layer.

7. The display device according to claim 5, wherein, The upper light-shielding layer includes an opening portion, which is provided at a location corresponding to the connection between the output electrode of the at least one transistor and the detector.

8. The display device according to claim 7, wherein, The area of ​​the lower light-shielding layer is larger than the area of ​​the upper light-shielding layer.

9. The display device according to claim 5, wherein, The detector includes a detection element, which includes a photoelectric conversion element.

10. The display device according to claim 9, wherein, The detection module further includes an optical system comprising multiple transmissive portions and light-absorbing portions provided around the multiple transmissive portions. The detection element and the sensor driving circuit overlap with the plurality of transmission portions.

11. The display device according to claim 1, wherein, The light-shielding layer comprises a metallic material.

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