Substrate processing apparatus and substrate processing method

Abstract

The inner peripheral end (74a) of the top portion (86) of the first shield faces the peripheral end face (Wc) of the substrate (W) in the horizontal direction, separated by a first annular gap (C1). The inner peripheral end (75a) of the top portion (88) of the second shield faces the outer peripheral end (28c) of the circular plate portion (28) in the horizontal direction, separated by a second annular gap (C2). The substrate facing surface (26a) maintains a predetermined distance (WU) from the surface (Wa) of the substrate (W), while the shielding member (6) faces the substrate (W). The sum (L1+L2) of the distance (L1) of the first annular gap (C1) and the distance (L2) of the second annular gap (C2) is greater than or equal to the flow path width (WF) in the exhaust path (EP), and less than or equal to the distance (WU) between the substrate facing surface (26a) and the surface (Wa) of the substrate (W) (WF≤(L1+L2)≤WU)).

Description

Technical Field

[0001] This application claims priority based on Japanese Patent Application No. 2019-122134, filed on June 28, 2019, the entire contents of which are incorporated herein by reference.

[0002] This invention relates to a substrate processing apparatus and a substrate processing method. Examples of substrates that are the objects of processing include semiconductor wafers, substrates for liquid crystal display devices, substrates for FPD (Flat Panel Display) devices such as organic EL (Electroluminescence) display devices, substrates for optical discs, substrates for magnetic disks, substrates for optical discs, substrates for photomasks, ceramic substrates, substrates for solar cells, etc. Background Technology

[0003] In the manufacturing process of semiconductor devices, a leaf-type substrate processing apparatus is sometimes used to process the surface of substrates such as semiconductor wafers with a processing liquid such as a chemical solution. This leaf-type substrate processing apparatus includes, for example: a spin chuck that holds and rotates the substrate approximately horizontally; a nozzle for supplying the processing liquid to the substrate rotating through the spin chuck; a shielding member opposite to the surface (upper surface) of the substrate held in the spin chuck; a processing cup for capturing the processing liquid discharged from the substrate; and a chamber for housing the spin chuck and the shielding member.

[0004] In the following Patent Document 1, the rotary chuck includes, for example, a circular plate-shaped rotary base having an outer diameter larger than that of the substrate; and a plurality of clamping members disposed at appropriate intervals on the outer periphery of the upper surface of the rotary base on a circumference corresponding to the outer periphery shape of the substrate.

[0005] Furthermore, in Patent Document 1, the shielding member, in order to more effectively isolate the upper space relative to the space surrounding the upper space above the substrate (the space formed between the substrate and the shielding member), i.e., the outer space, includes a circular plate portion disposed above the substrate held on the rotating chuck, and a cylindrical portion hanging down from the periphery of the circular plate portion. Because the gap formed between the lower end of the cylindrical portion of the shielding member and the outer peripheral edge of the upper surface of the rotating base is kept narrow (see Patent Document 1), Figure 3 Therefore, it can effectively prevent oxygen-containing ambient gases from the outer space from entering the space above. Thus, it can maintain the space above in a low-oxygen environment.

[0006] Furthermore, in Patent Document 1, the processing cup has multiple protective covers. These covers divide the space for air and liquid drainage. The air and liquid drainage paths are depressurized by driving an air venting device, thereby venting the liquid. The inner periphery of each protective cover surrounds and is adjacent to the cylindrical portion of the shielding member.

[0007] Existing technical documents

[0008] Patent documents

[0009] Patent Document 1: Japanese Patent No. 6330998 Summary of the Invention

[0010] Rotary chucks include clamping rotary chucks that hold the substrate horizontally by using multiple clamping members arranged around the substrate, and vacuum rotary chucks (so-called vacuum chucks) that hold the substrate horizontally by adsorbing the lower surface of the substrate.

[0011] In a clamping rotary chuck, a circular plate-shaped rotating base with an outer diameter larger than that of the substrate is used. In contrast, in a vacuum rotary chuck, a circular plate-shaped rotating base with an outer diameter smaller than that of the substrate is used.

[0012] In a clamping rotary chuck, the outer periphery of the rotating base is positioned on the outer side compared to the peripheral end face of the substrate. Therefore, in the substrate processing apparatus described in Patent Document 1, the outer periphery of the rotating base is positioned below the gap between the peripheral end face of the substrate and the cylindrical portion of the shielding member. However, in a vacuum rotary chuck, since the outer periphery of the rotating base is positioned on the inner side compared to the peripheral end face of the substrate, even when using a shielding member having a circular plate portion and a cylindrical portion, there is a concern that oxygen-containing ambient gas may pass through the gap between the peripheral end face of the substrate and the cylindrical portion of the shielding member and enter the space between the upper surface of the substrate and the shielding member (see reference). Figure 12 ).

[0013] Therefore, the object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can perform chemical treatment on the upper surface of a substrate in a low-oxygen environment when the substrate is located in the central part of the substrate rather than the outer periphery of the substrate.

[0014] One embodiment of the present invention provides a substrate processing apparatus, comprising: a chamber; a substrate holding unit disposed below a substrate and having a base plate smaller than the substrate in plan view, the substrate being held horizontally on the base plate inside the chamber; a shielding member having a circular plate portion having a substrate facing surface spaced apart from the upper surface of the substrate held by the substrate holding unit; and a processing cup having an inner shield and an outer shield, the inner shield having a surrounding area around the substrate holding unit. The outer shield has a first cylindrical portion and a first protective cover top portion extending from the upper end of the first cylindrical portion toward a vertical line passing through the center of the substrate held by the substrate holding unit. The inner peripheral end of the first protective cover top portion is horizontally opposite to the peripheral end face of the substrate through a first annular gap. The outer shield has a second cylindrical portion surrounding the first cylindrical portion and a second protective cover top portion extending from the upper end of the second cylindrical portion toward the vertical line and located above the first protective cover top portion. The inner peripheral end of the second protective cover top portion is horizontally opposite to the peripheral end face of the substrate through a first annular gap. The outer periphery of the aforementioned circular plate portion is horizontally opposite to the outer periphery of the aforementioned processing cup through a second annular gap. The aforementioned processing cup has a first space divided by the top ends of the aforementioned first shield and the aforementioned second shield, and an exhaust path communicating with the aforementioned first space. An inactive gas supply unit is formed between the aforementioned substrate held by the aforementioned substrate holding unit and the aforementioned shielding member, and supplies inactive gas to the second space communicating with the aforementioned first space. A liquid supply unit supplies liquid medicine to the upper surface of the aforementioned substrate held by the aforementioned substrate holding unit. A control device controls the aforementioned inactive gas supply unit and the aforementioned liquid medicine supply unit. The aforementioned control device performs the following steps: a positive pressure maintenance step, in which inactive gas is supplied to the aforementioned second space by the aforementioned inactive gas supply unit to maintain both the aforementioned first space and the aforementioned second space at a positive pressure; and a liquid medicine treatment step, in parallel with the aforementioned positive pressure maintenance step, in which liquid medicine is supplied to the upper surface of the aforementioned substrate held by the aforementioned substrate holding unit by the aforementioned liquid medicine supply unit to treat the upper surface of the aforementioned substrate with the liquid medicine.

[0015] According to this structure, a shielding member disposed above the substrate held in the substrate holding unit faces the upper surface of the substrate at a predetermined interval between the substrate facing surface and the upper surface of the substrate. The inner peripheral end of the top portion of the first shield faces the peripheral end face of the substrate in the horizontal direction, separated by a first annular gap. The inner peripheral end of the top portion of the second shield faces the outer peripheral end of the circular plate portion of the shielding member in the horizontal direction, separated by a second annular gap. When the substrate and the circular plate portion are rotated relative to the processing cup, annular gaps (first annular gap and second annular gap) need to be provided between the peripheral end face of the substrate and the top portion of the first shield, and between the outer peripheral end of the circular plate portion and the top portion of the first shield, respectively.

[0016] By supplying an inactive gas to the second space, both the first space (the space divided by the top portions of the first and second shields) and the second space (the space formed between the substrate and the aforementioned shielding member) are maintained at positive pressure. This effectively prevents oxygen-containing ambient gases from entering the second space through the two annular gaps, as the space within the chamber communicating with the first and second spaces. Consequently, the second space can be maintained in a low-oxygen environment.

[0017] While maintaining a positive pressure in the first and second spaces through the supply of inert gas, the upper surface of the substrate is treated with a chemical solution. This allows for chemical treatment of the substrate in a low-oxygen environment.

[0018] Therefore, even if the support substrate is located in the center rather than the outer periphery, the upper surface of the substrate can be treated with a chemical solution in a low-oxygen environment.

[0019] In one embodiment of the present invention, the positive pressure maintenance process includes a step of supplying an inactive gas with a flow rate greater than that of the exhaust gas discharged from the exhaust path to the second space.

[0020] According to this structure, an inactive gas with a flow rate greater than that of the exhaust gas discharged from the exhaust path is supplied to the second space. Therefore, it is relatively easy to maintain a positive pressure in both the first and second spaces.

[0021] In one embodiment of the present invention, the flow path width in the exhaust path is less than or equal to the total gap distance, which is the sum of the distance of the first annular gap and the distance of the second annular gap.

[0022] According to this structure, because the exhaust path has a narrow flow width, it is relatively easy to maintain positive pressure in both the first and second spaces. Furthermore, since the total gap distance is greater than the flow width in the exhaust path, ambient gas in the second space, which is under positive pressure, can easily pass through the first and second annular gaps and flow out into the proximity space. Therefore, it is possible to suppress or prevent oxygen-containing ambient gas in the proximity space from entering the second space through these two annular gaps.

[0023] Alternatively, the total distance of the aforementioned gaps may be less than or equal to the distance between the upper surface of the substrate held by the substrate holding unit and the opposite surface of the substrate of the shielding member.

[0024] According to this structure, the two annular gaps are narrow. This allows for more effective suppression or prevention of oxygen-containing gases from the adjacent space from entering the second space through these two annular gaps. Consequently, the second space can be maintained in a low-oxygen environment.

[0025] In one embodiment of the present invention, the flow path width in the exhaust path may be less than the distance between the upper surface of the substrate held by the substrate holding unit and the substrate-opposite surface of the shielding member.

[0026] According to this structure, due to the narrow exhaust path, it is relatively easy to maintain positive pressure in the first and second spaces.

[0027] When the width of the flow path in the exhaust path is less than or equal to the total distance of the gaps, it is preferable that the width of the flow path is the radial distance between the first cylindrical portion and the second cylindrical portion.

[0028] According to this structure, the radial distance between the first and second cylindrical portions is less than or equal to the total clearance distance. Because the exhaust path has a narrow flow width, it is relatively easy to maintain positive pressure in both the first and second spaces.

[0029] In one embodiment of the present invention, the substrate processing apparatus further includes an exhaust unit that draws ambient gas inside the processing cup through the exhaust path, thereby discharging the ambient gas of the chamber outside the chamber. The exhaust unit discharges both the ambient gas of the first space and the second space, and the ambient gas of the space outside the processing cup and inside the chamber.

[0030] According to this structure, the exhaust unit removes the ambient gas from both the first and second spaces, as well as the ambient gas from the space outside the cup and inside the chamber. Because it is necessary to stabilize the airflow within the chamber, the exhaust force of the exhaust unit cannot be excessively increased.

[0031] However, by specifying the flow path width in the exhaust path as described above, it is relatively easy to maintain the first and second spaces at positive pressure without using strong exhaust force.

[0032] In one embodiment of the present invention, the inner shield and the outer shield are configured to be raised and lowered independently of each other.

[0033] According to this structure, the vertical distance between the top of the first shield and the top of the second shield can be adjusted. Thus, the alignment of the top of the first shield with respect to the peripheral end face of the substrate and the alignment of the top of the second shield with respect to the outer peripheral end of the circular plate portion of the shield can be easily achieved without depending on the distance between the upper surface of the substrate and the opposing surface of the substrate of the shielding member.

[0034] In the case where the inner shield and the outer shield can be raised and lowered independently, the substrate processing apparatus may also include an exhaust flow adjustment ring, which is disposed on at least one of the inner shield and the outer shield. The exhaust flow adjustment ring adjusts the flow path width of the exhaust path as the inner shield and the outer shield move relative to each other in the vertical direction, thereby changing the pressure loss of the exhaust path.

[0035] According to this structure, by changing the relative vertical relationship between the inner and outer shields, the flow path width of the exhaust path can be narrowed, thereby increasing the pressure loss of the exhaust path. This makes it easier to maintain positive pressure in both the first and second spaces.

[0036] In one embodiment of the present invention, the inner peripheral end of the top portion of the first protective cover of the inner protective cover is located inside the outer peripheral end of the circular plate portion in the horizontal direction.

[0037] According to this structure, the inner peripheral end of the inner shield that forms the first annular gap together with the peripheral end face of the substrate is located inside the outer peripheral end of the circular plate that forms the second annular gap together with the inner peripheral end of the outer shield. Therefore, the second gap can be moved away from the peripheral end face of the substrate. If the peripheral end face of the substrate is close to the second gap, there is a concern that the outer peripheral portion of the upper surface of the substrate may be oxidized when oxygen-containing ambient gas enters the second space through the second gap.

[0038] In this structure, since the second gap can be moved away from the peripheral end face of the substrate, even if an oxygen-containing ambient gas enters the second space through the second gap, oxidation of the upper surface of the substrate can be suppressed or prevented.

[0039] The second embodiment of the present invention provides a substrate processing method performed by a substrate processing apparatus.

[0040] The aforementioned substrate processing apparatus includes: a chamber; a substrate holding unit disposed below a substrate, having a base plate smaller than the substrate when viewed from above, and horizontally holding the substrate on the base plate inside the chamber; a shielding member having a circular plate portion having a substrate facing surface spaced apart from the upper surface of the substrate held by the substrate holding unit; and a processing cup having an inner shield and an outer shield, the inner shield having a first cylindrical portion surrounding the substrate holding unit, and a vertical line extending from the upper end of the first cylindrical portion toward the center portion of the substrate held by the substrate holding unit. The first protective cover top portion extends outward, and the inner peripheral end of the first protective cover top portion is horizontally opposite to the peripheral end face of the substrate through a first annular gap. The outer protective cover has a second cylindrical portion surrounding the first cylindrical portion, and a second protective cover top portion extending from the upper end of the second cylindrical portion toward the vertical line and located above the first protective cover top portion. The inner peripheral end of the second protective cover top portion is horizontally opposite to the outer peripheral end of the circular plate portion through a second annular gap. The processing cup has a first space divided by the first protective cover top portion and the second protective cover top portion, and an exhaust path communicating with the first space.

[0041] The above-described substrate processing method includes the following steps: a shielding member facing step, wherein the distance between the opposing surfaces of the substrate and the upper surface of the substrate is kept fixed while the shielding member is positioned above the substrate held in the substrate holding unit; a protective cover facing step, wherein the inner protective cover and the outer protective cover are arranged such that the inner peripheral end of the top portion of the first protective cover is horizontally facing the peripheral end surface of the substrate held by the substrate holding unit through a first annular gap, and the inner peripheral end of the top portion of the second protective cover is horizontally facing the outer peripheral end of the circular plate portion of the shielding member through a second annular gap, thereby forming a structure inside the processing cup composed of the above-described shielding member. The first space defined by the top portion of the first shield and the top portion of the second shield, and the exhaust path communicating with the first space; a positive pressure maintenance process, in parallel with the shielding member opposing process and the shield opposing process, supplies an inactive gas to the second space formed between the substrate held by the substrate holding unit and the shielding member, maintaining both the first space and the second space at a positive pressure; and a liquid treatment process, in parallel with the shielding member opposing process, the shield opposing process and the positive pressure maintenance process, supplies a liquid to the upper surface of the substrate held by the substrate holding unit, and performs liquid treatment on the upper surface of the substrate.

[0042] According to this method, a shielding member disposed above the substrate held in the substrate holding unit faces the upper surface of the substrate at a predetermined interval between the substrate facing surface and the upper surface of the substrate. The inner peripheral end of the top portion of the first shield faces the peripheral end face of the substrate in the horizontal direction, separated by a first annular gap. The inner peripheral end of the top portion of the second shield faces the outer peripheral end of the circular plate portion in the horizontal direction, separated by a second annular gap. When the substrate and the circular plate portion are rotated relative to the processing cup, annular gaps (first annular gap and second annular gap) need to be provided between the peripheral end face of the substrate and the top portion of the first shield, and between the outer peripheral end of the circular plate portion and the top portion of the first shield, respectively.

[0043] By supplying an inactive gas to the second space, both the first space (the space divided by the top portions of the first and second shields) and the second space (the space formed between the substrate and the aforementioned shielding member) are maintained at positive pressure. This effectively prevents oxygen-containing ambient gases from entering the second space through the two annular gaps, as the space within the chamber communicating with the first and second spaces. Consequently, the second space can be maintained in a low-oxygen environment.

[0044] While maintaining a positive pressure in the first and second spaces through the supply of inert gas, the upper surface of the substrate is treated with a chemical solution. This allows for chemical treatment of the substrate in a low-oxygen environment.

[0045] Therefore, even if the support substrate is located in the center rather than the outer periphery, the upper surface of the substrate can be treated with a chemical solution in a low-oxygen environment.

[0046] In a second embodiment of the present invention, the positive pressure maintenance process includes a process of supplying an inactive gas to the second space at a flow rate greater than the flow rate of the exhaust gas discharged from the exhaust path.

[0047] According to this method, an inactive gas with a flow rate greater than that of the exhaust gas discharged from the exhaust path is supplied to the second space. This makes it relatively easy to maintain a positive pressure in both the first and second spaces.

[0048] A third embodiment of the present invention provides a substrate processing apparatus, comprising: a chamber; a substrate holding unit disposed below a substrate and having a base plate smaller than the substrate in plan view, the substrate being held horizontally on the base plate inside the chamber; a shielding member having a circular plate portion having a substrate facing surface spaced apart from the upper surface of the substrate held by the substrate holding unit; and a processing cup having an inner shield and an outer shield, the inner shield having a first cylindrical portion surrounding the substrate holding unit and a first shield top portion extending from the upper end of the first cylindrical portion toward a vertical line passing through the center of the substrate held by the substrate holding unit, the inner peripheral end of the first shield top portion being horizontally aligned with the peripheral end surface of the substrate through a first annular gap. In contrast, the outer shield has a second cylindrical portion surrounding the first cylindrical portion, and a second shield top portion extending from the upper end of the second cylindrical portion toward the vertical line and located above the first shield top portion. The inner peripheral end of the second shield top portion is horizontally opposite to the outer peripheral end of the circular plate portion through a second annular gap. The processing cup has a first space divided by the first shield top portion and the second shield top portion, and an exhaust path communicating with the first space. An inactive gas supply unit is formed between the substrate held by the substrate holding unit and the shielding member, and supplies inactive gas to the second space communicating with the first space. A liquid supply unit supplies liquid medicine to the upper surface of the substrate held by the substrate holding unit.

[0049] According to this structure, a shielding member disposed above the substrate held in the substrate holding unit faces the upper surface of the substrate at a predetermined interval between the substrate facing surface and the upper surface of the substrate. The inner peripheral end of the top portion of the first shield faces the peripheral end face of the substrate in the horizontal direction, separated by a first annular gap. The inner peripheral end of the top portion of the second shield faces the outer peripheral end of the circular plate portion in the horizontal direction, separated by a second annular gap. The first space (the space divided by the top portions of the first and second shields) and the second space (the space formed between the substrate and the shielding member) are connected. When the substrate and the circular plate portion are rotated relative to the processing cup, annular gaps (the first annular gap and the second annular gap) need to be provided between the peripheral end face of the substrate and the top portion of the first shield, and between the outer peripheral end of the circular plate portion and the top portion of the first shield, respectively.

[0050] By supplying an inert gas to the second space, both the first and second spaces can be maintained at positive pressure. In this state, oxygen-containing ambient gases from the adjacent space within the chamber connected to the first and second spaces can be effectively prevented from entering the second space through the two annular gaps. Thus, the second space can be maintained in a low-oxygen environment.

[0051] By maintaining the first and second spaces under positive pressure through the supply of inactive gas, the upper surface of the substrate is treated with a chemical solution, thereby enabling the substrate to be treated with a chemical solution in a low-oxygen environment.

[0052] Therefore, even if the support substrate is located in the center rather than the outer periphery, the upper surface of the substrate can be treated with a chemical solution in a low-oxygen environment.

[0053] The foregoing or other objects, features and effects of this invention will become clear with reference to the accompanying drawings and the following description of the embodiments. Attached Figure Description

[0054] Figure 1 This is a schematic diagram of a substrate processing apparatus according to one embodiment of the present invention, viewed from above.

[0055] Figure 2 This is an illustrative cross-sectional view used to explain an example of the structure of the processing unit included in the aforementioned substrate processing apparatus.

[0056] Figure 3 This is a bottom view of the shielding component of the aforementioned processing unit.

[0057] Figure 4A This is a diagram showing the non-relative state of the protective cover of the processing cup of the above-mentioned processing unit.

[0058] Figure 4B This diagram illustrates an example of the capture state of the protective cover of the processing cup in the aforementioned processing unit.

[0059] Figure 5 This is a block diagram illustrating the electrical structure of the main parts of the aforementioned substrate processing apparatus.

[0060] Figure 6 This is a cross-sectional view showing the surface of the substrate processed by the aforementioned substrate processing apparatus under magnification.

[0061] Figure 7 This is a flowchart illustrating the contents of a substrate processing example performed in the aforementioned processing unit.

[0062] Figure 8A This is an illustrative diagram used to explain the above-described substrate processing example.

[0063] Figure 8B It is used to explain the continuation Figure 8A A diagram illustrating the subsequent processes.

[0064] Figure 8C It is used to explain the continuation Figure 8B A diagram illustrating the subsequent processes.

[0065] Figure 9 This is a diagram used to illustrate the first variation of the present invention.

[0066] Figure 10 is a diagram illustrating a second variation of the present invention.

[0067] Figure 11 is a diagram illustrating the third modification of the present invention.

[0068] Figure 12 This diagram illustrates the substrate processing using a rotating chuck at the center of the substrate for adsorption and retention. Detailed Implementation

[0069] Figure 1 This is a schematic diagram of a substrate processing apparatus 1 according to one embodiment of the present invention, viewed from above.

[0070] The substrate processing apparatus 1 is a leaf-type apparatus that processes substrates W, such as silicon wafers, one by one. In this embodiment, the substrate W is a circular substrate. The substrate processing apparatus 1 includes: multiple processing units 2 that process the substrates W using a processing fluid; a loading port LP that holds a substrate receiving container C for accommodating the multiple substrates W processed by the processing units 2; an indexing robot IR and a transfer robot CR that transport the substrates W between the loading port LP and the processing units 2; and a control device 3 that controls the substrate processing apparatus 1. The indexing robot IR transports the substrates W between the substrate receiving container C and the transfer robot CR. The transfer robot CR transports the substrates W between the indexing robot IR and the processing units 2. The multiple processing units 2, for example, have the same structure.

[0071] Figure 2 This is a schematic cross-sectional view used to illustrate a structural example of processing unit 2. Figure 3 This is a bottom view of the shielding component 6. Figure 4A This is a diagram showing the non-relative state of the protective cover of the cup 13. Figure 4B This is a diagram illustrating an example of the shield capture state (second shield capture state) of the processing cup 13.

[0072] like Figure 2 As shown, the processing unit 2 includes: a box-shaped chamber 4; a rotating chuck (substrate holding unit) 5, which holds a substrate W in a horizontal position within the chamber 4 and rotates the substrate W about a vertical axis of rotation (a defined vertical line) A1 passing through the center of the substrate W; and a shielding member 6, which is used to shield the upper surface (surface Wa) of the substrate W held in the rotating chuck 5 (see reference). Figure 6The space above the shielding member 6 is shielded from the surrounding ambient gas. The processing unit 2 also includes: a central nozzle 7, which extends vertically inside the shielding member 6, for spraying processing gas or processing fluid (medicine, cleaning fluid, organic solvent, etc.) toward the central portion of the upper surface of the substrate W held on the rotary chuck 5; a medicine supply unit 8, for supplying hydrofluoric acid, as an example of a medicine, to the central nozzle 7; a cleaning fluid supply unit 9, for supplying cleaning fluid to the central nozzle 7; an organic solvent supply unit 10, for supplying an organic solvent, as a low surface tension liquid, to the central nozzle 7; an inactive gas supply unit 11, for supplying inactive gas to the central nozzle 7; and a cylindrical processing cup 13, which surrounds the side of the rotary chuck 5.

[0073] The chamber 4 includes: a box-shaped partition wall 18 housing the rotary chuck 5 and the shielding component 6; an FFU (fan filter unit) 19 serving as an air supply unit that supplies clean air (air filtered by a filter) from the upper part of the partition wall 18 into the partition wall 18; and an exhaust duct (exhaust unit) 20 that discharges gas from the lower part of the partition wall 18 into the chamber 4. The FFU 19 is positioned above the partition wall 18 and installed on the top wall of the partition wall 18. The FFU 19 supplies clean air downward into the chamber 4 from the top wall of the partition wall 18. The exhaust duct 20 is connected to the cylindrical component 70 of the processing cup 13 (described later) and to the exhaust device (exhaust unit) 14 installed in the factory where the substrate processing apparatus 1 is installed.

[0074] The exhaust duct 20 guides the gas inside the chamber 4 toward the exhaust device 14. Therefore, a downward airflow is formed within the chamber 4 via the FFU 19 and the exhaust duct 20. The processing of the substrate W is performed while the downward airflow is formed within the chamber 4.

[0075] like Figure 2As shown, the rotary chuck 5 in this embodiment is a vacuum suction chuck. The rotary chuck 5 suctions the central portion of the lower surface (the back side opposite to surface Wa) of the substrate W. The rotary chuck 5 includes: a lower rotation shaft 21 extending in the vertical direction; a rotating base 22 mounted on the upper end of the lower rotation shaft 21 and holding the substrate W in a horizontal posture by suctioning the lower surface of the substrate W; and a rotary motor 23 having a rotation shaft coaxially coupled with the lower rotation shaft 21. The substrate W is placed on the rotating base 22. The rotating base 22 includes a horizontally circular upper surface 22a having an outer diameter smaller than the outer diameter of the substrate W. The center of the substrate W is disposed on a vertical rotation axis A1 passing through the center portion of the upper surface 22a of the rotating base 22. Although the rotating base 22 contacts the central portion of the lower surface of the substrate W, it does not contact the outer periphery of the lower surface of the substrate W. Therefore, with the lower surface of the substrate W held by the rotating base 22, the outer periphery of the substrate W extends outward compared to the peripheral edge of the rotating base 22. Driven by the rotary motor 23, the substrate W rotates about the central axis of the lower rotation shaft 21.

[0076] The shielding component 6 includes a shielding plate 26 and an upper rotating shaft 27 integrally rotatable on the shielding plate 26. The shielding plate 26 includes a circular plate portion 28 held in a horizontal position. A cylindrical through hole is formed in the center of the circular plate portion 28, through which the shielding plate 26 and the upper rotating shaft 27 pass vertically. The through hole includes a cylindrical inner circumferential surface that divides the internal space. A central nozzle 7 is inserted vertically into the through hole. The shielding plate 26 (i.e., the circular plate portion 28) is a circular plate with an outer diameter larger than the outer diameter of the substrate W.

[0077] On the lower surface of the shielding plate 26 (circular plate portion 28), a substrate opposing surface 26a is formed, which is opposite to the upper surface of the substrate W held in the rotary chuck 5 in the vertical direction. The substrate opposing surface 26a is a flat surface parallel to the upper surface of the substrate W held in the rotary chuck 5.

[0078] The central nozzle 7 extends vertically along the vertical axis, i.e., the rotation axis A1, which passes through the center of the shielding plate 26 (circular plate portion 28) and the base plate W. The central nozzle 7 is positioned above the rotating chuck 5 and is inserted into the internal space of the shielding plate 26 and the upper rotating shaft 27. The central nozzle 7 moves up and down together with the shielding plate 26 and the upper rotating shaft 27.

[0079] The upper rotating shaft 27 is rotatably supported by a support arm 31 extending horizontally above the shielding plate 26. A shielding plate rotating unit 32, including an electric motor, is connected to the shielding plate 26 and the upper rotating shaft 27. The shielding plate rotating unit 32 causes the shielding plate 26 and the upper rotating shaft 27 to rotate relative to the support arm 31 about a central axis coaxial with the rotation axis A1.

[0080] Additionally, the shielding component lifting unit 33, which includes an electric motor, ball screw, etc., is combined with the support arm 31. The shielding component lifting unit 33 causes the shielding component 6 (shielding plate 26 and upper rotating shaft 27) and the central nozzle 7 to rise and fall together with the support arm 31 in the vertical direction.

[0081] The shielding component lifting unit 33 moves the shielding plate 26 up and down between a lower position and an upper position, wherein the lower position is when the substrate facing surface 26a is close to the upper surface of the substrate W held in the rotating chuck 5. Figure 2 The position shown by the dashed line is the position where the vertical distance from the opposite surface 26a of the substrate to the upper surface of the substrate W is greater than that of the lower position. Figure 2 (The position indicated by the solid line).

[0082] The shielding space consists of the shield space SP1 (first space), which will be described later. (See reference...) Figure 4B (etc.) and the space SP2 (second space) on the substrate. See reference. Figure 4B (etc.) are formed. The substrate space SP2 is the space between the substrate-facing surface 26a of the shielding member 6 located at the lower position and the upper surface of the substrate W. Although this shielding space is not completely isolated from the space around it, it is within the space of the substrate space SP2, the shield space SP1, and the space within the chamber 4 that communicates with both (hereinafter referred to as "access space SP3"). Figure 4B There is almost no fluid flow between them.

[0083] The central nozzle 7 includes: a cylindrical housing 40 extending vertically; and a first nozzle pipe 41, a second nozzle pipe 46, a third nozzle pipe 51, and a fourth nozzle pipe 56 respectively inserted vertically inside the housing 40. The first to fourth nozzle pipes 41, 46, 51, and 56 are respectively equivalent to inner pipes.

[0084] like Figure 3 As shown, the lower end of the first nozzle pipe 41 opens at the lower end face of the housing 40, forming a first nozzle outlet (central nozzle outlet) 41a. Liquid medicine from the liquid medicine supply unit 8 is supplied through the first nozzle pipe 41.

[0085] like Figure 2 As shown, the liquid medicine supply unit 8 includes: a liquid medicine pipe 42 connected to the upstream end of the first nozzle pipe 41; a liquid medicine valve 43 clamped in the middle of the liquid medicine pipe 42; and a first flow rate regulating valve 44 that changes the flow rate of the liquid medicine flowing in the liquid medicine pipe 42. Liquid medicine with reduced dissolved oxygen content (low dissolved oxygen concentration) is supplied from the liquid medicine supply source to the liquid medicine pipe 42. The first flow rate regulating valve 44 may have a structure including a valve body with an internal valve seat, a valve core for opening and closing the valve seat, and an actuator for moving the valve core between an open position and a closed position. Other flow rate regulating valves may have the same structure.

[0086] If the chemical solution valve 43 is open, the chemical solution is sprayed downwards from the first spray outlet 41a. If the chemical solution valve 43 is closed, the spraying of the chemical solution from the first spray outlet 41a stops. The spraying flow rate of the chemical solution from the first spray outlet 41a is adjusted by the first flow rate adjustment valve 44. Examples of chemical solutions include hydrofluoric acid (dilute hydrofluoric acid), buffered hydrofluoric acid (Buffered HF: a mixture of hydrofluoric acid and ammonium fluoride), FOM (hydrofluoric acid ozone), FPM (hydrofluoric acid and hydrogen peroxide mixture), SC1 (ammonia and hydrogen peroxide mixture), SC2 (hydrochloric acid and hydrogen peroxide mixture), SPM (sulfuric acid / hydrogen peroxide mixture), and polymer removal solutions. Chemical solutions containing hydrofluoric acid (hydrofluoric acid, buffered hydrofluoric acid, FOM, FPM, etc.) are suitable as etching solutions for removing oxide films (silicon oxide films).

[0087] When using a solution containing hydrofluoric acid, in order to prevent oxidation of the substrate W surface Wa due to oxygen in the hydrofluoric acid, the dissolved oxygen content of the hydrofluoric acid-containing solution supplied to the solution piping 42 is sufficiently reduced. The solution with reduced dissolved oxygen content is supplied from the solution supply source to the solution piping 42.

[0088] like Figure 3 As shown, the lower end of the second nozzle pipe 46 opens at the lower end face of the housing 40, forming a second nozzle outlet (central nozzle outlet) 46a. Cleaning fluid from the cleaning fluid supply unit 9 is supplied through the second nozzle pipe 46.

[0089] like Figure 2 As shown, the cleaning fluid supply unit 9 includes: a cleaning fluid pipe 47 connected to the upstream end of the second nozzle pipe 46; a cleaning fluid valve 48 clamped in the middle of the cleaning fluid pipe 47; and a second flow rate regulating valve 49 for changing the flow rate of the cleaning fluid flowing in the cleaning fluid pipe 47. If the cleaning fluid valve 48 is open, the cleaning fluid is sprayed downwards from the second nozzle outlet 46a. If the cleaning fluid valve 48 is closed, the spraying of the cleaning fluid from the second nozzle outlet 46a stops. The second flow rate regulating valve 49 adjusts the spraying flow rate of the cleaning fluid from the second nozzle outlet 46a. The cleaning fluid is water. The water is, for example, deionized water (DIW), but not limited to DIW, and may also be carbonated water, electrolyzed ionized water, hydrogen-rich water, ozone water, ammonia water, and hydrochloric acid water diluted to a concentration of approximately 10 ppm to 100 ppm.

[0090] like Figure 3 As shown, the lower end of the third nozzle pipe 51 opens at the lower end face of the housing 40, forming the third nozzle outlet (central nozzle outlet) 51a. Organic solvent from the organic solvent supply unit 10 is supplied through the third nozzle pipe 51.

[0091] like Figure 2 As shown, the organic solvent supply unit 10 includes: an organic solvent pipe 52 connected to the upstream end of the third nozzle pipe 51; an organic solvent valve 53 clamped in the middle of the organic solvent pipe 52; and a third flow rate regulating valve 54 for changing the flow rate of the organic solvent flowing in the organic solvent pipe 52. If the organic solvent valve 53 is open, organic solvent is sprayed downwards from the third nozzle outlet 51a. If the organic solvent valve 53 is closed, the spraying of organic solvent from the third nozzle outlet 51a is stopped. The spraying flow rate of organic solvent from the third nozzle outlet 51a is adjusted by the third flow rate regulating valve 54.

[0092] The organic solvent supplied to organic solvent pipe 52 is a solvent with a surface tension lower than that of water. Specific examples of organic solvents include alcohols, mixtures of fluorinated organic solvents and alcohols. Alcohols include, for example, at least one of methanol, ethanol, propanol, and IPA. Fluorinated organic solvents include, for example, at least one of HFE (hydrofluoroether) and HFC (hydrofluorocarbon). An example of an organic solvent being IPA (isopropanol) is described below.

[0093] like Figure 3 As shown, the lower end of the fourth nozzle pipe 56 opens at the lower end face of the housing 40, forming a fourth nozzle outlet (inactive gas outlet) 56a. Inactive gas from the inactive gas supply unit 11 is supplied through the fourth nozzle pipe 56.

[0094] like Figure 2 As shown, the inactive gas supply unit 11 includes: an inactive gas pipe 57 connected to the upstream end of the fourth nozzle pipe 56; an inactive gas valve 58 clamped in the middle of the inactive gas pipe 57; and a fourth flow regulating valve 59 for changing the flow rate of the inactive gas flowing in the inactive gas pipe 57. If the inactive gas valve 58 is open, the inactive gas is ejected (blown out) downwards from the fourth nozzle outlet 56a. If the inactive gas valve 58 is closed, the ejection of the inactive gas from the fourth nozzle outlet 56a stops. The ejection flow rate of the inactive gas from the fourth nozzle outlet 56a is adjusted by the fourth flow regulating valve 59. The inactive gas is, for example, nitrogen, but it can also be argon, etc.

[0095] like Figure 2 , Figure 4A and Figure 4B As shown, the processing cup 13 is positioned outward (away from the rotation axis A1) compared to the base plate W held in the rotating chuck 5.

[0096] The following mainly refers to Figure 4A and Figure 4B The instructions for handling cup 13 are explained.

[0097] The processing cup 13 captures the processing liquid (medicinal solution, cleaning solution, organic solvent, etc.) discharged from the substrate W held in the rotary chuck 5 and delivers it to a discharge device corresponding to the type of processing liquid. The processing cup 13 delivers the ambient gas held on the substrate W in the rotary chuck 5 to the exhaust device 14 via the exhaust pipe 20.

[0098] The processing cup 13 includes: a cylindrical component 70; a plurality of cups (first cup 71, second cup 72, and third cup 73) surrounding the rotating chuck 5 on the inner side of the cylindrical component 70; and a plurality of processing liquids (in) that are scattered around the substrate W. Figure 2 In the example, there are three protective covers (first protective cover (inner protective cover) 74, second protective cover (outer protective cover) 75, and third protective cover 76); and a protective cover lifting unit 78 that allows multiple protective covers to be raised and lowered individually. The processing cup 13 is disposed on the outer side (away from the rotation axis A1) compared to the outer periphery of the base plate W held in the rotating chuck 5.

[0099] Each cup (first cup 71, second cup 72, and third cup 73) is cylindrical (annular) and surrounds the rotating chuck 5. The second cup 72, being the second from the inside, is positioned outwards compared to the first cup 71, and the outermost third cup 73 is positioned outwards compared to the second cup 72. The third cup 73 is, for example, integral with the second cover 75 and rises and falls together with the second cover 75. Each cup (first cup 71, second cup 72, and third cup 73) has an upwardly opening annular groove.

[0100] The first drain pipe 79 is connected to the tank of the first receiving cup 71. The processing liquid (mainly cleaning liquid) introduced into the tank of the first receiving cup 71 is transported through the first drain pipe 79 to the drain processing equipment outside the substrate processing device 1, where it is processed.

[0101] The second drain pipe 80 is connected to the tank of the second cup 72. The treatment liquid (mainly a chemical solution) introduced into the tank of the second cup 72 is transported through the second drain pipe 80 to the drain treatment equipment outside the substrate processing device 1, where it is processed.

[0102] The third drain pipe 81 is connected to the tank of the third cup 73. The processing liquid (mainly organic solvent) introduced into the tank of the third cup 73 is transported through the third drain pipe 81 to the drain processing equipment outside the substrate processing device 1, where it is processed.

[0103] The innermost first protective cover 74 surrounds the rotating chuck 5 and has a rotation axis A1 relative to the substrate W (see reference). Figure 2The first shield 74 has a roughly rotationally symmetrical shape when viewed from above. It includes: a cylindrical lower end portion 83 surrounding the rotary chuck 5; a cylindrical portion 84 extending outward from the upper end of the lower end portion 83 (away from the rotation axis A1 of the substrate W); a first cylindrical portion 85 extending vertically upward from the outer periphery of the upper surface of the cylindrical portion 84; and an annular first shield top portion 86 extending inward from the upper end of the first cylindrical portion 85 (approaching the rotation axis A1 of the substrate W). The lower end portion 83 is located in a groove of the first cup 71 and is received inside the groove of the first cup 71 when the first shield 74 is in its closest position to the first cup 71. The inner peripheral end 74a of the first shield 74 (the top of the first shield top portion 86) is circular when viewed from above, surrounding the substrate W held in the rotary chuck 5. The inner diameter of the inner peripheral end 74a of the first shield 74 is larger than the outer diameter of the substrate W. The top portion 86 of the first protective cover is an inclined portion that extends inward and obliquely upward from the upper end of the first cylindrical portion 85. For example... Figure 4A , Figure 4B As shown, the cross-sectional shape of the top part 86 of the first protective cover is straight.

[0104] The second shield 75, the second one from the inside, surrounds the rotating chuck 5 outside the first shield 74 and has a shape that is approximately rotationally symmetrical with respect to the rotation axis A1 of the substrate W. The second shield 75 has: a second cylindrical portion 87 coaxial with the first shield 74; and a second shield top portion 88 extending from the upper end of the second cylindrical portion 87 toward the center (in a direction close to the rotation axis A1 of the substrate W). The second cylindrical portion 87 is located in a groove of the second cup 72. The second shield top portion 88 is an inclined portion extending inward and obliquely upward from the upper end of the second cylindrical portion 87. Figure 4A , Figure 4B As shown, the cross-sectional shape of the top portion 88 of the second shield is linear. The inner peripheral end 75a of the second shield 75 (the top of the top portion 88 of the second shield) is circular in plan view, surrounding the substrate W held in the rotating chuck 5. The inner diameter of the inner peripheral end 75a of the second shield 75 is larger than the outer diameter of the substrate W.

[0105] The top part 88 of the second shield is disposed above the top part 86 of the first shield 74 and overlaps with the top part 86 of the first shield 74 when viewed from above. The top part 88 of the second shield is formed such that it approaches the top part 86 of the first shield without contacting it when the first shield 74 and the second shield 75 are closest in the vertical direction.

[0106] The outermost third shield 76 surrounds the rotating chuck 5 outside the second shield 75 and has a shape that is approximately rotationally symmetrical in plan view with respect to the rotation axis A1 of the substrate W. The third shield 76 has: a cylindrical portion 89 coaxial with the second shield 75; and a third shield top portion 90 extending from the upper end of the cylindrical portion 89 toward the center (in a direction close to the rotation axis A1 of the substrate W). The cylindrical portion 89 is located in a groove of the third cup 73. The inner peripheral end 76a of the third shield 76 (the top of the third shield top portion 90) is circular in plan view, surrounding the substrate W held in the rotating chuck 5. The inner diameter of the inner peripheral end 76a of the third shield 76 is larger than the outer diameter of the substrate W. The third shield top portion 90 is an inclined portion that slopes inward and upward from the upper end of the cylindrical portion 89. Figure 4A , Figure 4B As shown, the cross-sectional shape of the top part 90 of the third protective cover is straight.

[0107] The top part 90 of the third shield is disposed above the top part 88 of the second shield 75, and overlaps with the top part 88 of the second shield 75 when viewed from above. The top part 90 of the third shield is formed such that it approaches the top part 88 of the second shield without contacting it when the second shield 75 and the third shield 76 are closest in the vertical direction.

[0108] The inner peripheral ends (i.e., the top ends) 74a, 75a, and 76a of each top end (top end of the first protective cover 86, top end of the second protective cover 88, and top end of the third protective cover 90) are defined by the inner peripheral ends of the folded-back portions that bend downwards.

[0109] The processing cup 13 is foldable. The protective cover lifting unit 78 unfolds and folds the processing cup 13 by lifting at least one of the three protective covers (first protective cover 74, second protective cover 75, and third protective cover 76).

[0110] The cover lifting unit 78 raises and lowers each cover (first cover 74, second cover 75, and third cover 76) between an upper position and a lower position. The cover lifting unit 78 can keep each cover stationary at any position within the range from the upper position to the lower position. The upper position is the position where the inner peripheral end of the top part (top part 86 of the first cover, top part 88 of the second cover, and top part 90 of the third cover) is positioned above the upper surface of the substrate W, and the lower position is the position where the inner peripheral end of the top part is positioned below the upper surface of the substrate W.

[0111] The inner circumferential ends 75a of the second shield 75 and 76a of the third shield 76 are arranged radially outward compared to the inner circumferential end 74a of the first shield 74. That is, the diameter D2 of the inner circumferential ends 75a of the second shield 75 and 76a of the third shield 76 (refer to...) Figure 4A The diameter D1 of the inner peripheral end 74a of the first protective cover 74 is greater than that of the first protective cover 74 (refer to...). Figure 4A (Refer to D2 > D1). The difference between diameter D2 and diameter D1 is, for example, 10 mm.

[0112] The diameter D1 of the inner peripheral end 74a of the first protective cover 74 is smaller than the outer diameter D3 of the circular plate portion 28 of the shielding member 6 (i.e., the outer diameter of the shielding plate 26). Figure 4B ).

[0113] With all three shields (shield 1 74, shield 2 75, and shield 3 76) in the lower position, it is achieved that none of the shields is in contact with the peripheral end face Wc of the substrate W (refer to...). Figure 4B The horizontally relative shield is in a non-relative state.

[0114] The supply of processing liquid (medicinal solution, cleaning solution, organic solvent, etc.) to substrate W and the drying of substrate W are carried out with a protective cover facing the peripheral end face Wc of substrate W.

[0115] In addition, in order to achieve a state in which the processing liquid discharged from the outer periphery of the substrate W can be captured by the first shield 74 (described later) Figure 8A The state shown is referred to below as the "first shield capture state," with all three shields positioned in the upper position. In the first shield capture state, all the processing liquid discharged from the outer periphery of the rotating substrate W is received (captured) by the first shield 74.

[0116] In addition, in order to achieve a state in which the processing liquid discharged from the outer periphery of the substrate W can be captured by the third shield 76 (described later) Figure 8C The state shown is referred to below as the "third shield capture state". The first shield 74 and the second shield 75 are positioned in the lower position, and the third shield 76 is positioned in the upper position. In the third shield capture state, all the processing liquid discharged from the outer periphery of the rotating substrate W is caught (captured) by the third shield 76.

[0117] exist Figure 4B In the second shield capture state shown, all the processing liquid discharged from the outer periphery of the rotating substrate W is caught (captured) by the second shield 75. In the second shield capture state of the processing cup 13, the second shield 75 and the third shield 76 are in the upper position. On the other hand, the first shield 74 is not in the lower position, but rather in a position relative to its peripheral end face that is higher than the lower position and lower than the upper position. Figure 4B And as will be discussed later Figure 8A(The position of the first shield 74 shown). The relative position of the peripheral end faces is that the upper end of the first shield 74 is positioned above the lower end of the rotating base 22. The relative position of the peripheral end faces can also be that the upper end of the first shield 74 is positioned at the same height as the upper surface of the substrate W, or that the upper end of the first shield 74 is positioned at the height between the upper surface and the lower surface of the substrate W.

[0118] Furthermore, in the second shield-captured state of the processing cup 13, a shield-interval space (first space) SP1 is formed between the first shield 74 and the second shield 75. The shield-interval space SP1 surrounds and communicates with the substrate upper space (second space) SP2, which is the space between the substrate opposing surface 26a and the upper surface (surface Wa) of the substrate W. In the second shield-captured state of the processing cup 13, the processing liquid discharged from the outer periphery of the substrate W held in the rotary chuck 5 enters the shield-interval space SP1 and is received by the inner wall of the second shield 75.

[0119] In the second shield capture state of the handling cup 13, such as Figure 4B As shown, the inner peripheral end 74a of the top end portion 86 of the first shield is horizontally opposite to the peripheral end surface Wc of the substrate W through the first annular gap C1, and the inner peripheral end 75a of the top end portion 88 of the second shield is horizontally opposite to the outer peripheral end 28c of the circular plate portion 28 of the shielding member 6 through the second annular gap C2.

[0120] Distance L1 represents the radial distance (horizontal direction orthogonal to the rotation axis A1 of the substrate W) from the peripheral end face Wc of the substrate W to the inner peripheral end 74a of the top end portion 86 of the first shield. Distance L2 represents the radial distance from the outer peripheral end 28c of the circular plate portion 28 of the shielding member 6 to the inner peripheral end 75a of the top end portion 88 of the second shield. If the total distance L1 of the first annular gap C1 and the distance L2 of the second annular gap C2 (i.e., L1+L2) is defined as the total gap distance, then the flow path width WF in the exhaust path EP described later is less than or equal to the total gap distance (L1+L2) (WF < (L1+L2)).

[0121] As described above, the inner peripheral end 74a of the first shield 74 is located radially inward of the substrate W compared to the outer peripheral end 28c of the circular plate portion 28 of the shielding member 6. Therefore, the second annular gap C2 can be moved away radially outward from the outer peripheral end 28c of the substrate W.

[0122] An opening 70a is formed on the side wall of the cylindrical component 70 that handles the cup 13 (see reference). Figure 2 ), exhaust pipe 20 (refer to) Figure 2The exhaust device 14 is connected to the opening 70a. The suction force of the exhaust device 14 is always transmitted to the opening 70a via the exhaust pipe 20. Therefore, the opening 70a is always in a depressurized state.

[0123] In the second shield capture state of the handling cup 13, such as Figure 4B As shown, an exhaust path EP communicating with the space SP1 between the first shield 74 and the second shield 75 is formed. Specifically, the exhaust path EP includes: a narrow flow path P1 divided by the first cylindrical portion 85 and the second cylindrical portion 87; a flow path P2 divided by the outer wall 72a of the second cylindrical portion 87 and the second cup 72; and a flow path P3 divided by the outer wall 72a of the second cup 72 and the inner wall 73a of the third cup 73. The flow path width WF of the exhaust path EP represents the minimum distance of the exhaust path EP in the radial direction of the substrate W. In this embodiment, the narrow flow path P1 is the narrowest, therefore, the flow path width of the narrow flow path P1 (the interval of the narrow flow path P1 in the radial direction of the substrate W) is equivalent to the flow path width WF of the exhaust path EP. The exhaust gas discharged from between the second cup 72 and the third cup 73 into the internal space of the cylindrical member 70 is introduced into the exhaust pipe 20 through the opening 70a.

[0124] In the second shield capture state of the processing cup 13, the ambient gas above the substrate W (ambient gas in the space SP2 on the substrate) is drawn into the exhaust pipe 20 and the exhaust device 14 through the shield space SP1 and the exhaust path EP.

[0125] Furthermore, the exhaust duct 20 and exhaust device 14 not only draw in the ambient gas above the substrate W (the ambient gas in the space SP2 on the substrate), but also draw in the ambient gas inside the chamber 4. Specifically, the ambient gas inside the chamber 4 is introduced into the interior of the cylindrical component 70 by exhausting gas through the opening 70a via the exhaust duct 20. The ambient gas introduced into the interior of the cylindrical component 70 is then transported to the exhaust device 14 via the opening 70a and the exhaust duct 20.

[0126] That is, the exhaust pipe 20 and the exhaust device 14 draw in both the ambient gas in the shield space SP1 and the substrate space SP2, and the ambient gas outside the processing cup 13 and inside the chamber 4.

[0127] In the substrate processing example performed by the processing unit 2, when the processing cup 13 is in the second shield capture state, the shielding member 6 is positioned in the lower position. When the shielding member 6 is positioned in the lower position, the distance in the vertical direction from the upper surface of the substrate W to the substrate-facing surface 26a of the shielding member 6 is a predetermined interval WU. This interval WU is greater than or equal to the total gap distance (L1+L2) (WU≥(L1+L2)).

[0128] That is, the total gap distance (L1+L2) is greater than or equal to the flow path width WF in the exhaust path EP and less than or equal to the distance WU between the substrate opposite surface 26a and the upper surface of the substrate W (WF≤(L1+L2)≤WU).

[0129] Figure 5 This is a block diagram illustrating the electrical structure of the main parts of the substrate processing apparatus 1.

[0130] The control device 3 is constructed using, for example, a microcomputer. The control device includes an arithmetic unit such as a CPU, a storage unit such as a fixed storage device or a hard disk drive, and an input / output unit. The storage unit stores the program executed by the arithmetic unit.

[0131] Furthermore, the control device 3 is connected to a rotary motor 23, a shielding component lifting unit 33, a shielding plate rotating unit 32, and a protective cover lifting unit 78 as controlled objects. The control device 3 controls the operation of the rotary motor 23, the shielding component lifting unit 33, the shielding plate rotating unit 32, and the protective cover lifting unit 78 according to a predetermined program.

[0132] In addition, the control device 3 opens and closes the drug solution valve 43, the cleaning solution valve 48, the organic solvent valve 53, and the inactive gas valve 58 according to a predetermined program.

[0133] In addition, the control device 3 adjusts the opening of the first flow regulating valve 44, the second flow regulating valve 49, the third flow regulating valve 54, the fourth flow regulating valve 59, etc., according to a predetermined program.

[0134] The following describes the processing of a substrate W on a surface Wa, which serves as the device formation surface, where a pattern is formed.

[0135] Figure 6 This is an enlarged cross-sectional view showing the surface Wa of the substrate W processed by the substrate processing apparatus 1. The substrate W to be processed is, for example, a silicon wafer, on which a pattern 100 is formed. The pattern 100 is, for example, a fine pattern. The pattern 100 is as follows: Figure 6 As shown, the pattern can be a row-and-column arrangement of structures 101 with convex shapes (columnar). In this case, the linewidth W1 of the structure 101 is set to, for example, about 10 nanometers to 45 nanometers, and the spacing W2 of the pattern 100 is set to, for example, about 10 nanometers to several micrometers. The film thickness T of the pattern 100 is, for example, about 1 micrometer. In addition, the pattern 100 can have an aspect ratio (the ratio of film thickness T to linewidth W1) of, for example, about 5 to 500 (typically about 5 to 50).

[0136] Alternatively, pattern 100 can also be a pattern formed by repeating linear patterns created from microchannels. Alternatively, pattern 100 can also be formed by creating multiple micropores (voids or pores) on the thin film.

[0137] Pattern 100 includes, for example, an insulating film. Alternatively, pattern 100 may also include a conductive film. More specifically, pattern 100 may be formed from a laminated film consisting of multiple films stacked together, and includes both an insulating film and a conductive film. Pattern 100 may also be a pattern composed of a single layer of film. The insulating film may be a silicon oxide film (SiO2 film) or a silicon nitride film (SiN film). Additionally, the conductive film may be an amorphous silicon film with impurities introduced for low resistance, or it may be a metal film (e.g., a metal wiring film).

[0138] Alternatively, pattern 100 can be a hydrophilic membrane. An example of a hydrophilic membrane is a TEOS membrane (a type of silicon oxide membrane).

[0139] Figure 7 This is a flowchart illustrating the contents of a substrate processing example performed in processing unit 2. Figures 8A-8C This is a schematic diagram illustrating the above-described substrate processing example.

[0140] While referring to Figures 1 to 7 The above substrate processing example will be explained below. Please refer to the relevant documentation as appropriate. Figures 8A-8C .

[0141] First, the unprocessed substrate W (e.g., a circular substrate with a diameter of 300 mm) is moved from the substrate receiving container C into the processing unit 2 by the indexing robot IR and the transfer robot CR, and then moved into the interior of the chamber 4. Figure 7 (S1). The substrate W is delivered to the rotary chuck 5 with its surface Wa facing upward. Then, the rotary chuck 5 holds the substrate W by adsorbing and supporting the center of the lower surface of the substrate W.

[0142] The substrate W is moved into the chamber 4 when all the protective covers are positioned at the bottom. Figure 4A The process is carried out with the shield not in a relative position and the shielding component 6 retracted to the upper position.

[0143] After the transport robot CR retreats outside the processing unit 2, the control device 3 controls the shielding component lifting unit 33 to lower the shielding component 6, as shown. Figure 8A As shown, configure it in the following position ( Figure 7 S2: The shielding component descends. (Shielding component relative process). Thus, an on-substrate space SP2 is formed between the substrate opposing surface 26a and the upper surface of the substrate W.

[0144] Next, the control device 3 controls the rotary motor 23 to increase the rotational speed of the rotating base 22 to a specified liquid processing speed (within the range of 10 to 1200 rpm, for example, 1000 rpm), and maintains this liquid processing speed. Figure 7 S3: The substrate W begins to rotate. Since the substrate W is held on the rotating base 22, if the rotating base 22 rotates at a liquid processing speed, the substrate W will also rotate around the rotation axis A1 at a liquid processing speed.

[0145] In addition, the control device 3 controls the shielding plate rotation unit 32 to make the shielding plate 26 rotate around the rotation axis A1 synchronously with the rotation of the substrate W (that is, in the same direction and at the same speed as the rotation of the substrate W).

[0146] Additionally, the control device 3 controls the protective cover lifting unit 78 to raise the second protective cover 75 and the third protective cover 76 to the upper position, and positions the first protective cover 74 at the relative position on the peripheral end face. Figure 4B (as shown in the image). Therefore, the processing cup 13 is... Figure 4A The shield shown is switched to a non-relative state. Figure 4B The second shield capture state is shown. In this state, the inner peripheral end 74a of the top portion 86 of the first shield is horizontally opposite to the peripheral end face Wc of the substrate W, and the inner peripheral end 75a of the top portion 88 of the second shield is horizontally opposite to the outer peripheral end 28c of the circular plate portion 28 (shield facing process). As a result, a shield space SP1 communicating with the substrate space SP2 is provided adjacent to the outer side of the substrate space SP2.

[0147] Additionally, control device 3 opens inactive gas valve 58. Thus, as... Figure 8A As shown, an inert gas is ejected downwards (i.e., toward the center of the upper surface of the substrate W) from the fourth nozzle 56a of the central nozzle 7 (fourth nozzle piping 56). The flow rate of the inert gas ejected from the fourth nozzle 56a is adjusted to, for example, 100 (liters / minute) by the fourth flow rate regulating valve 59. The inert gas ejected from the fourth nozzle 56a expands along the upper surface of the substrate W in the substrate space SP2 between the upper surface of the substrate W and the substrate-facing surface 26a of the shielding member 6. As a result, the ambient gas in the substrate space SP2 is replaced with an inert gas, and the oxygen concentration in the ambient gas of the substrate space SP2 decreases.

[0148] from Figure 4BThe flow rate of exhaust gas passing through and being drawn into exhaust duct 20 via the exhaust path EP is determined based on multiple exhaust conditions, including the attraction force of the exhaust device 14 and the flow path width WF of the exhaust path EP formed under the capture state of the second shield of the processing cup 13. The flow rate of the inactive gas ejected from the fourth outlet 56a of the central nozzle 7 is greater than the flow rate of the exhaust gas passing through the exhaust path EP and being drawn into exhaust duct 20. That is, the inactive gas with a flow rate greater than that of the exhaust gas discharged from the exhaust path EP is supplied to the substrate space SP2.

[0149] If sufficient time has been given for supplying inactive gas to the substrate space SP2 to achieve a low oxygen concentration (e.g., oxygen concentration less than 100 ppm), and the rotation speed of the substrate W reaches the liquid processing speed, then the control device 3... Figure 8A As shown, the solution treatment process begins by using hydrofluoric acid, as an example of a solution, to treat the surface Wa of the substrate W. Figure 7 S4).

[0150] In the drug solution treatment process ( Figure 7 In step S4), the control device 3 opens the liquid valve 43. As a result, hydrofluoric acid is ejected from the first outlet 41a of the central nozzle 7 (first nozzle pipe 41) toward the center of the upper surface (surface Wa) of the rotating substrate W (liquid supply process). The flow rate of the hydrofluoric acid at this time is, for example, 2 (liters / minute). Hydrofluoric acid with sufficiently reduced dissolved oxygen content is used as the hydrofluoric acid supplied to the upper surface of the substrate W.

[0151] Hydrofluoric acid supplied to the upper surface of substrate W is moved towards the outer periphery of substrate W by centrifugal force generated by the rotation of substrate W. This forms a liquid film LF1 of hydrofluoric acid covering the entire area of ​​the upper surface of substrate W. In other words, a hydrofluoric acid-based coverage is performed on the upper surface of substrate W, covering the entire area of ​​the upper surface of substrate W with the liquid film LF1 of hydrofluoric acid. The hydrofluoric acid contained in the liquid film LF1 contacts the surface Wa of substrate W, thereby treating the surface Wa with hydrofluoric acid. Specifically, the native oxide film (silicon oxide film) formed on surface Wa is removed by hydrofluoric acid.

[0152] Hydrofluoric acid that has moved to the outer periphery of substrate W is scattered from the outer periphery of substrate W toward the side of substrate W. The hydrofluoric acid scattered from substrate W is caught by the inner wall of the second shield 75, flows down along the inner wall of the second shield 75, and is transported to the drainage treatment equipment outside substrate processing device 1 via the second cup 72 and the second drain pipe 80.

[0153] In the drug solution treatment process ( Figure 7In step S4), the inactive gas is continuously supplied at the aforementioned flow rate. The inactive gas is supplied to the substrate space SP2 via the control device 3, maintaining a positive pressure (higher than the pressure in the space outside the processing cup 13 and inside the chamber 4) on both the shield space SP1 and the substrate space SP2 (positive pressure maintenance process). This effectively prevents oxygen-containing ambient gases near the space SP3 from entering the substrate space SP2 through the first annular gap C1 and the second annular gap C2. Consequently, the substrate space SP2 can be maintained in a low-oxygen environment.

[0154] Then, while the space between the shields SP1 and the space on the substrate SP2 are maintained at positive pressure due to the supply of inactive gas, the surface Wa of the substrate W is treated with hydrofluoric acid. This allows the substrate W to be treated with hydrofluoric acid in a low-oxygen environment.

[0155] In the drug solution treatment process ( Figure 7 In step S4), the oxide film is removed from the surface Wa of the substrate W, which serves as the pattern forming surface. If the oxygen concentration in the ambient gas in contact with the substrate W is high, the thickness of the oxide film increases, or a new oxide film is formed. These oxide films are removed by a chemical solution. Therefore, if the oxygen concentration in the ambient gas in contact with the substrate W is high, the pattern 100 may become brittle.

[0156] By subjecting the surface Wa of substrate W to a hydrofluoric acid solution treatment in an environment with low oxygen concentration, the solution treatment process can be suppressed or prevented. Figure 7 Oxidation of surface Wa in S4). Thus, the brittleness of pattern 100 caused by oxidation of surface Wa of substrate W can be suppressed or prevented.

[0157] If a predetermined period elapses from the start of hydrofluoric acid spraying, control device 3 closes liquid valve 43, stopping the spraying of hydrofluoric acid from central nozzle 7 (first nozzle piping 41). Thus, the liquid treatment process ( Figure 7 (S4) ends.

[0158] Next, the control device 3 performs a cleaning process to replace the hydrofluoric acid on the substrate W with a cleaning solution and remove the hydrofluoric acid from the substrate W. Figure 7 (S5). Specifically, the control device 3 controls the cover lifting unit 78 to raise the first cover 74 of the processing cup 13, which is in the second cover capture state, from the relative position of the peripheral end face, thereby... Figure 8B As shown, the inner peripheral end 74a of the top portion 86 of the first protective cover (refer to...) Figure 4B It is located above the upper surface of the substrate W (achieving the first shield capture state).

[0159] While maintaining the rotational speed of the substrate W and the shielding plate 26 at the liquid processing speed, the control device 3 opens the cleaning fluid valve 48. As a result, cleaning fluid is sprayed from the second nozzle 46a of the central nozzle 7 (second nozzle piping 46) toward the center of the upper surface of the rotating substrate W. The cleaning fluid supplied to the center of the upper surface of the substrate W is moved toward the outer periphery of the substrate W by the centrifugal force generated by the rotation of the substrate W. This forms a liquid film LF2 of cleaning fluid covering the entire area of ​​the upper surface of the substrate W. By applying a coating of cleaning fluid to the surface Wa of the substrate W, the hydrofluoric acid adhering to the surface Wa is washed away by the cleaning fluid.

[0160] The cleaning fluid that moves to the outer periphery of the substrate W is dispersed from the outer periphery of the substrate W toward the side of the substrate W. The cleaning fluid dispersed from the substrate W is caught by the inner wall of the first protective cover 74, which is horizontally opposite to the peripheral end face Wc of the substrate W, and flows down along the inner wall of the first protective cover 74, and is transported to the drainage treatment equipment outside the substrate processing apparatus 1 via the first receiving cup 71 and the first drainage pipe 79.

[0161] If a predetermined period elapses from the start of the cleaning fluid supply, and the entire upper surface of the substrate W is covered by the cleaning fluid, the control device 3 continues to spray the cleaning fluid while controlling the rotary motor 23 and the shielding plate rotation unit 32 to gradually reduce the rotation speed of the substrate W and the shielding plate 26 from the liquid processing speed to the plating speed (a low rotation speed of zero or less than 40 rpm. In this substrate processing example, this is, for example, 10 rpm). Then, the control device 3 maintains the rotation speed of the substrate W at this plating speed (the plating cleaning process...). Figure 7 (S6) Thus, on the upper surface of the substrate W, a liquid film LF2 of cleaning fluid covering its entire area is supported in a liquid-covered state. In this state, the centrifugal force acting on the liquid film LF2 of cleaning fluid is less than the surface tension acting between the cleaning fluid and the upper surface of the substrate W, or the centrifugal force and the surface tension approximately cancel each other out. As the substrate W decelerates, the centrifugal force acting on the cleaning fluid on the substrate W weakens, and the amount of cleaning fluid discharged from the substrate W decreases. As a result, the thickness of the liquid film LF2 of cleaning fluid held on the upper surface of the substrate W increases.

[0162] If a predetermined period elapses from the deceleration of the substrate W's rotation to the liquid coating speed, the control device 3 maintains the rotation of the substrate W at the liquid coating speed while closing the cleaning fluid valve 48 to stop the cleaning fluid from being ejected from the central nozzle 7 (second nozzle piping 46).

[0163] Next, control device 3 begins the replacement process. Figure 7(S7). Specifically, the control device 3 maintains the rotation speed of the substrate W at the liquid coating speed while opening the organic solvent valve 53. As a result, IPA, an example of an organic solvent, is sprayed from the third nozzle 51a of the central nozzle 7 (third nozzle pipe 51) toward the center of the upper surface of the rotating substrate W. As a result, the cleaning liquid contained in the liquid film LF2 of the cleaning solution is replaced with IPA. As a result, a liquid film LF3 of IPA is maintained in a liquid coating state, covering the entire area of ​​the upper surface of the substrate W.

[0164] If a predetermined period elapses from the start of IPA ejection (sufficient time for the liquid film to be completely replaced by IPA), the control device 3 controls the shield lifting unit 78 to lower the first shield 74 and second shield 75 of the processing cup 13, which are in the first shield capture state, to the lower position, thereby... Figure 8C As shown, the inner wall of the third shield 76 is horizontally opposite to the peripheral end face Wc of the substrate W (achieving the third shield capture state).

[0165] IPA is discharged from the outer periphery of the substrate W. The IPA discharged from the outer periphery of the substrate W is received by the inner wall of the third shield 76, flows down along the inner wall of the third shield 76, and is transported to the drainage treatment equipment outside the substrate processing device 1 via the third cup 73 and the third drainage pipe 81.

[0166] If a predetermined period elapses after the organic solvent valve 53 has been opened, the control device 3 closes the organic solvent valve 53. Thus, the displacement process ( Figure 7 (S7) ends.

[0167] Next, a drying process is performed to dry the substrate W. Figure 7 (S8).

[0168] Specifically, the control device 3 maintains the processing cup 13 in the third shield capture state. With the shielding member 6 positioned in the lower position and inactive gas continuing to be ejected from the central nozzle 7, the control device 3 controls the rotary motor 23 and the shielding plate rotation unit 32 to increase the rotation speed of the substrate W and the shielding plate 26 to a drying rotation speed (e.g., several thousand rpm). At this drying rotation speed, the substrate W and the shielding plate 26 rotate. As a result, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is thrown around the substrate W.

[0169] If a predetermined period has elapsed since the acceleration of substrate W began, the control device 3 stops the rotation of substrate W based on the rotary chuck 5 by controlling the rotary motor 23. Figure 7 (S9). In addition, the control device 3 controls the shielding plate rotation unit 32 to stop the rotation of the shielding plate 26. Then, the control device 3 controls the shielding component lifting unit 33 to raise the shielding component 6 and retract it to the upper position.

[0170] Then, the substrate W is removed from chamber 4. Figure 7 (S10). Specifically, the control device 3 causes the robotic arm of the transfer robot CR to enter the interior of the chamber 4. The control device 3 releases the substrate W from the gripper of the rotating chuck 5. Then, the control device 3 keeps the released substrate W in the robotic arm of the transfer robot CR. Then, the control device 3 causes the robotic arm of the transfer robot CR to retract from the chamber 4. Thus, the processed substrate W is removed from the chamber 4, and the series of substrate processing steps ends. The removed substrate W is delivered from the transfer robot CR to the indexing robot IR, and is stored in the substrate receiving container C by the indexing robot IR.

[0171] Based on the above, according to this embodiment, the shielding member 6 is positioned as follows: The distance between the substrate facing surface 26a and the upper surface of the substrate W is maintained at a predetermined distance WU, and the shielding member 6 is positioned opposite the upper surface of the substrate W held in the rotating chuck 5. Furthermore, the inner peripheral end 74a of the first shield top portion 86 is horizontally positioned opposite the peripheral end surface Wc of the substrate W across the first annular gap C1, and the inner peripheral end 75a of the second shield top portion 88 is horizontally positioned opposite the outer peripheral end 28c of the circular plate portion 28 of the shielding member 6 across the second annular gap C2. Thus, the shield space SP1 between the first shield 74 and the second shield 75 is positioned around the substrate space SP2, which is the space between the substrate facing surface 26a and the upper surface of the substrate W, and communicates with the substrate space SP2.

[0172] Furthermore, by supplying an inactive gas to the substrate space SP2, both the shield space SP1 and the substrate space SP2 are maintained at positive pressure. This effectively prevents oxygen-containing ambient gases from entering the substrate space SP2 through the two annular gaps (first annular gap C1 and second annular gap C2) within the proximity space SP3, which communicates with both the shield space SP1 and the substrate space SP2. Consequently, the substrate space SP2 can be maintained in a low-oxygen environment.

[0173] While maintaining a positive pressure in the shield space SP1 and the substrate space SP2 through the supply of inactive gas, the surface Wa of the substrate W is treated with a chemical solution (containing hydrofluoric acid). This allows for the treatment of the surface Wa of the substrate W with the chemical solution (containing hydrofluoric acid) in a low-oxygen environment.

[0174] Therefore, when the rotating chuck 5 (vacuum chuck) supports the central part of the substrate W instead of the outer periphery of the substrate W, the surface Wa of the substrate W can be treated with a chemical solution (hydrofluoric acid) in a low-oxygen environment.

[0175] Furthermore, the flow path width WF in the exhaust path EP is less than or equal to the sum of the distance L1 of the first annular gap C1 and the distance L2 of the second annular gap C2, i.e., the total gap distance (L1+L2). Because the flow path width WF in the exhaust path EP is narrow, the pressure loss in the exhaust path EP is large when the processing cup 13 is in the second shield trapping state. Therefore, it is easier to maintain a positive pressure in the shield space SP1 and the substrate space SP2. Additionally, because the total gap distance (L1+L2) is greater than or equal to the flow path width WF in the exhaust path EP, ambient gas in the substrate space SP2, which is under positive pressure, easily flows out into the proximity space SP3 through the first annular gap C1 and the second annular gap C2. Thus, it is possible to suppress or prevent ambient gas in the proximity space SP3 from entering the substrate space SP2 through these two annular gaps (the first annular gap C1 and the second annular gap C2).

[0176] The total gap distance (L1+L2) is less than or equal to the distance WU between the substrate-facing surface 26a of the shielding member 6 in the lower position and the upper surface of the substrate W. Therefore, the two annular gaps (first annular gap C1 and second annular gap C2) are relatively narrow. This allows for more effective suppression or prevention of oxygen-containing ambient gases within the approach space SP3 from entering the substrate space SP2 through these two annular gaps (first annular gap C1 and second annular gap C2). Consequently, the substrate space SP2 can be maintained in a low-oxygen environment.

[0177] Furthermore, the exhaust duct 20 and exhaust device 14 not only draw in ambient gases from the shield space SP1 and the substrate space SP2, but also from the space outside the processing cup 13 and inside the chamber 4. Since it is necessary to stabilize the airflow within the chamber 4, the exhaust force of the exhaust device 14 cannot be excessively increased. In the case where the exhaust device 14 is a shared exhaust source in the factory where the substrate processing apparatus 1 is installed, due to the limitations of the exhaust force available in the factory, it is difficult to ensure sufficient exhaust force to achieve adequate exhaust of the processing cup 13. However, by narrowing the flow path width WF in the exhaust path EP as described above, it is relatively easy to maintain positive pressure in the shield space SP1 and the substrate space SP2 without using strong exhaust force.

[0178] Furthermore, since the inner peripheral end 74a of the first shield 74 is located inside the outer peripheral end 28c of the circular plate portion 28 of the shielding member 6 in the horizontal direction, the second annular gap C2 can be moved away from the peripheral end face Wc of the substrate W. If the peripheral end face Wc of the substrate W is close to the second annular gap C2, there is a concern that when oxygen-containing ambient gas enters the space SP2 on the substrate through the second annular gap C2, the outer periphery of the surface Wa of the substrate W may be oxidized by this ambient gas.

[0179] However, in this embodiment, since the second annular gap C2 is moved away from the peripheral end face Wc of the substrate W, even if an oxygen-containing ambient gas enters the space SP2 on the substrate through the second annular gap C2, the oxidation of the outer periphery of the surface Wa of the substrate W can be suppressed or prevented.

[0180] The above describes the embodiments of the present invention, but the present invention can also be implemented in other ways.

[0181] For example, it is also possible that, in the third shield capture state of processing the cup 13, the first shield 74 and the second shield 75 are not configured to the lower position, but rather configured to... Figure 8C The middle position is indicated by the dashed line. In this case, it is possible to suppress the entry of oxygen-containing ambient gases into the space between the substrate W and the shielding member 6. The middle position is the position between the upper position and the lower position. The middle position can also be the position where the inner peripheral end 74a of the first shield 74 is positioned above the lower end of the rotating base 22, and the inner peripheral end 75a of the second shield 75 is positioned below the upper surface of the substrate W.

[0182] In the aforementioned substrate processing example, as long as in the chemical solution processing step ( Figure 7 In S4), the shielding component 6 is positioned in the lower position, and in subsequent cleaning processes ( Figure 7 S5), liquid cleaning process ( Figure 7 S6) and replacement process ( Figure 7 In S7), the shielding component 6 can also be configured in the upper position.

[0183] In this case, a nozzle different from the central nozzle 7 (e.g., a scanning nozzle capable of moving along the upper surface of the substrate W) can also be used to supply cleaning fluid or organic solvent.

[0184] like Figure 9 As shown, the inner diameter of the inner peripheral end 74a of the first shield 74 may also be equal to the inner peripheral end 75a of the second shield 75, and equal to the inner peripheral end 76a of the third shield 76. In this case, the inner peripheral end 74a of the first shield 74 is larger than the outer diameter D3 of the circular plate portion 28 of the shielding member 6 (i.e., the outer diameter of the shielding plate 26). The outer diameter D3 of the circular plate portion 28 of the shielding member 6 is equal to or approximately equal to the outer diameter of the base plate W held in the rotating chuck 5.

[0185] In the aforementioned embodiment, the flow path (narrow flow path P1) divided by the first cylindrical portion 85 and the second cylindrical portion 87 is the narrowest part of the exhaust path EP, and the horizontal spacing of the narrow flow path P1 is the flow path width WF of the exhaust path EP. However, a part of the exhaust path EP other than the narrow flow path P1 can also be the narrowest part of the exhaust path EP.

[0186] like Figure 10A and Figure 10B As shown, the first protective cover top portion 86 and the second protective cover 75 can also be connected in such a way that the vertical distance between the first protective cover top portion 86 and the second protective cover top portion 88 is kept fixed. Figure 10A The second shield capture state is shown, in which the processing liquid discharged from the substrate W is captured by the top part 88 of the second shield. Figure 10B The first shield capture state is shown, in which the processing liquid discharged from the substrate W is captured by the top part 86 of the first shield.

[0187] exist Figure 10A and Figure 10B In the processing cup shown, the first protective cover and the second protective cover are integrated. Specifically, from... Figure 4A The processing cup 13 shown above removes the first cup 71 and the first cover 74, and only the top part 86 of the first cover 74 is provided below the top part 88 of the second cover, so that the top part 86 of the first cover is combined (integrated) with the middle part (middle part in the vertical direction) of the second cylindrical part 87.

[0188] At the root (outer periphery) of the top part 86 of the first shield, a through hole 201 is formed to guide the processing liquid received by the top part 88 of the second shield toward the second cylindrical part 87.

[0189] like Figure 11A and Figure 11B As shown, an annular exhaust flow adjustment ring 301 can also be provided in the exhaust path EP, the spacing between it and the first shield 74 and the second shield 75 in the vertical direction correspondingly changing the flow path width WF of the exhaust path EP. The exhaust flow adjustment ring 301 rises and falls together with the second shield 75. By raising and lowering the second shield 75, as... Figure 11A and Figure 11B As shown, when in the second shield capture state of the processing cup 13, the flow path width WF of the exhaust path EP can be adjusted. Figure 11B In, with Figure 11A As shown, the shielding component 6 is positioned below, and... Figure 11A As shown, compared to the second shield 75, it is positioned below to reduce the flow path width WF. Figure 11B In the middle, the first shield 74 and the exhaust flow adjustment ring 301 divide the narrowest part of the exhaust path EP. Figure 11A In comparison, Figure 11BIn this configuration, the flow path width WF of the exhaust path EP decreases, thus increasing the pressure loss of the exhaust path EP and reducing the exhaust flow rate of the exhaust path EP. In other words, the exhaust flow rate of the exhaust path EP can be increased or decreased simply by changing the position of the exhaust flow rate adjustment ring 301. This makes it easier to maintain a positive pressure in the space between the shields SP1 and the space on the substrate SP2. Furthermore, the exhaust flow rate adjustment ring 301 can also be vertically and vertically mounted on the first shield 74.

[0190] In the aforementioned embodiments, it was described that the relative positional relationship between the shielding member 6 and the rotary chuck 5 in the vertical direction was changed by raising and lowering the shielding member 6. However, it is also possible to raise and lower both the shielding member 6 and the rotary chuck 5 or only raise and lower the rotary chuck 5 to change the relative positional relationship between the shielding member 6 and the rotary chuck 5 in the vertical direction.

[0191] The cross-sectional shape of the top part of each shield of the cup 13 (top part 86 of the first shield, top part 88 of the second shield, and top part 90 of the third shield) can also be, for example, a smoothly upward-convex arc.

[0192] Alternatively, the space SP1 between the shields may not be divided by the first shield 74 and the second shield 75, but by the second shield 75 and the third shield 76.

[0193] The example given is a case where the cup 13 is a three-layer cup. However, as long as the cup 13 has an inner protective cover and an outer protective cover, it can also be a two-layer cup, or even a multi-layer cup with four or more layers.

[0194] The rotary chuck 5 is not limited to a vacuum chuck. It can also be a Bernoulli chuck that uses Bernoulli's law to generate an adsorption force that attracts the substrate W to the upper surface of the rotary base 22 and fixes the substrate W to the rotary base 22. Alternatively, it can be an electrostatic chuck that allows the substrate W to be electrostatically adsorbed onto the upper surface of the rotary base 22.

[0195] The embodiments of the present invention have been described in detail, but these are merely specific examples used to clarify the technical content of the present invention. The present invention should not be limited to these specific examples, and the spirit and scope of the present invention are defined only by the appended claims.

[0196] Explanation of reference numerals in the attached figures

[0197] 1: Substrate processing device

[0198] 2: Processing Unit

[0199] 3: Control device

[0200] 4: Chamber

[0201] 5: Rotary chuck (substrate holding unit)

[0202] 6: Shielding components

[0203] 8: Medicine supply unit

[0204] 11: Inactive gas supply unit

[0205] 13: Handling the cup

[0206] 14: Exhaust system (exhaust unit)

[0207] 20: Exhaust pipe (exhaust unit)

[0208] 26: Shielding panel

[0209] 26a: Opposite surface of substrate

[0210] 28: Circular plate section

[0211] 28c: Peripheral end

[0212] 74: First Shield (Inner Shield)

[0213] 74a: Inner peripheral end

[0214] 75: Second Shield (Outer Shield)

[0215] 75a: Inner peripheral end

[0216] 85: First cylindrical section

[0217] 86: Top of the first protective shield

[0218] 87: Second cylindrical section

[0219] 88: Top of the second protective shield

[0220] A1: Axis of rotation (vertical line)

[0221] C1: First annular gap

[0222] C2: Second annular gap

[0223] EP: Exhaust path

[0224] L1: Distance (distance of the first annular gap)

[0225] L2: Distance (distance between the second annular gap)

[0226] SP1: Shield Space (Space 1)

[0227] SP2: Space on the substrate (second space)

[0228] Wa: Surface

[0229] Wc: Peripheral

[0230] WF: Flow path width

[0231] WU: Spacing (the distance between the upper surface of the substrate and the opposite surface of the substrate).

Claims

1. A substrate processing apparatus, comprising: chamber; A substrate holding unit, disposed below a substrate, has a base plate smaller than the substrate when viewed from above, and horizontally holds the substrate on the base plate inside the chamber; A shielding member having a circular plate portion having a substrate opposing surface that is spaced apart from the upper surface of the substrate held by the substrate holding unit; The processing cup has an inner shield and an outer shield. The inner shield has a first cylindrical portion surrounding the substrate holding unit and a first shield top portion extending from the upper end of the first cylindrical portion toward a vertical line passing through the center of the substrate held by the substrate holding unit. The inner circumferential end of the first shield top portion is directly opposite the circumferential end face of the substrate in the horizontal direction through a first annular gap. The outer shield has a second cylindrical portion surrounding the first cylindrical portion and a second shield top portion extending from the upper end of the second cylindrical portion toward the vertical line and located above the first shield top portion. The inner circumferential end of the second shield top portion is horizontally opposite the outer circumferential end of the circular plate portion through a second annular gap. The processing cup has a first space divided by the first shield top portion and the second shield top portion inside, and an exhaust path communicating with the first space. An inactive gas supply unit supplies inactive gas to a second space formed between the substrate held by the substrate holding unit and the shielding member and communicating with the first space; A drug supply unit supplies drug solution to the upper surface of the substrate held by the substrate holding unit; and The control device controls the inactive gas supply unit and the liquid medicine supply unit. The control device performs the following steps: In the positive pressure maintenance process, with the inner circumferential end of the top portion of the first shield directly facing the peripheral end face of the substrate in the horizontal direction through a first annular gap, and the inner circumferential end of the top portion of the second shield facing the outer circumferential end of the circular plate in the horizontal direction through a second annular gap, inactive gas is supplied to the second space using the inactive gas supply unit to maintain both the first and second spaces at a positive pressure; and In the parallel process of the positive pressure maintenance process, the liquid treatment step involves supplying liquid to the upper surface of the substrate held by the substrate holding unit using the liquid supply unit, thereby treating the upper surface of the substrate with the liquid.

2. The substrate processing apparatus according to claim 1, wherein, The positive pressure maintenance process includes a process of supplying an inactive gas with a flow rate greater than that of the exhaust gas discharged from the exhaust path to the second space.

3. The substrate processing apparatus according to claim 1, wherein, The flow path width in the exhaust path is less than or equal to the total gap distance, which is the sum of the distance of the first annular gap and the distance of the second annular gap.

4. The substrate processing apparatus according to claim 3, wherein, The total gap distance is less than the distance between the upper surface of the substrate held by the substrate holding unit and the opposite surface of the substrate of the shielding member.

5. The substrate processing apparatus according to claim 1, wherein, The flow path width in the exhaust path is less than the distance between the upper surface of the substrate held by the substrate holding unit and the substrate-opposite surface of the shielding member.

6. The substrate processing apparatus according to any one of claims 3 to 5, wherein, The flow path width is the radial distance between the first cylindrical portion and the second cylindrical portion.

7. The substrate processing apparatus according to any one of claims 3 to 5, wherein, The substrate processing apparatus further includes an exhaust unit that draws ambient gas from inside the processing cup through the exhaust path, thereby discharging the ambient gas from the chamber to the outside of the chamber. The exhaust unit discharges both the ambient gas from the first and second spaces and the ambient gas from the space outside the processing cup and inside the chamber.

8. The substrate processing apparatus according to any one of claims 1 to 5, wherein, The inner and outer shields are configured to be raised and lowered independently of each other.

9. The substrate processing apparatus according to claim 8, wherein, It also includes an exhaust flow adjustment ring, which is disposed on at least one of the inner shield and the outer shield. The exhaust flow adjustment ring adjusts the flow path width of the exhaust path as the inner shield and the outer shield move relative to each other in the vertical direction, thereby changing the pressure loss of the exhaust path.

10. The substrate processing apparatus according to any one of claims 1 to 5, wherein, The inner peripheral end of the top portion of the first protective cover of the inner protective cover is located inside the outer peripheral end of the circular plate portion in the horizontal direction.

11. A substrate processing method, performed by a substrate processing apparatus, The substrate processing apparatus includes: chamber; A substrate holding unit, disposed below a substrate, has a base plate smaller than the substrate when viewed from above, and horizontally holds the substrate on the base plate inside the chamber; A shielding member having a circular plate portion having a substrate-facing surface that is spaced apart from the upper surface of the substrate held by the substrate holding unit; and The processing cup has an inner shield and an outer shield. The inner shield has a first cylindrical portion surrounding the substrate holding unit and a first shield top portion extending from the upper end of the first cylindrical portion toward a vertical line passing through the center of the substrate held by the substrate holding unit. The inner circumferential end of the first shield top portion is directly opposite the circumferential end face of the substrate in the horizontal direction through a first annular gap. The outer shield has a second cylindrical portion surrounding the first cylindrical portion and a second shield top portion extending from the upper end of the second cylindrical portion toward the vertical line and located above the first shield top portion. The inner circumferential end of the second shield top portion is horizontally opposite the outer circumferential end of the circular plate portion through a second annular gap. The processing cup has a first space divided by the first shield top portion and the second shield top portion inside, and an exhaust path communicating with the first space. The substrate processing method includes the following steps: In the process of positioning the shielding member, while keeping the distance between the opposing surfaces of the substrate and the upper surface of the substrate fixed, the shielding member is positioned above the substrate held in the substrate holding unit. In the process of shielding relative steps, the inner shield and the outer shield are configured such that the inner peripheral end of the top part of the first shield is directly opposite to the peripheral end face of the substrate held by the substrate holding unit in the horizontal direction through the first annular gap, and the inner peripheral end of the top part of the second shield is horizontally opposite to the outer peripheral end of the circular plate part of the shielding member through the second annular gap, thereby forming a first space divided by the top parts of the first shield and the second shield, and an exhaust path communicating with the first space inside the processing cup; In a positive pressure maintenance process, parallel to the shielding member opposing process and the protective cover opposing process, an inactive gas is supplied to a second space formed between the substrate and the shielding member held by the substrate holding unit, thereby maintaining both the first space and the second space at a positive pressure; and The liquid treatment process, in parallel with the shielding component opposing process, the protective cover opposing process, and the positive pressure maintaining process, supplies liquid to the upper surface of the substrate held by the substrate holding unit, thereby treating the upper surface of the substrate with the liquid.

12. The substrate processing method according to claim 11, wherein, The positive pressure maintenance process includes a process of supplying the second space with an inactive gas at a flow rate greater than that of the exhaust gas discharged from the exhaust path.

13. A substrate processing apparatus, comprising: chamber; A substrate holding unit, disposed below a substrate, has a base plate smaller than the substrate when viewed from above, and horizontally holds the substrate on the base plate inside the chamber; A shielding member having a circular plate portion having a substrate opposing surface that is spaced apart from the upper surface of the substrate held by the substrate holding unit; The processing cup has an inner shield and an outer shield. The inner shield has a first cylindrical portion surrounding the substrate holding unit and a first shield top portion extending from the upper end of the first cylindrical portion toward a vertical line passing through the center of the substrate held by the substrate holding unit. The inner circumferential end of the first shield top portion is directly opposite the circumferential end face of the substrate in the horizontal direction through a first annular gap. The outer shield has a second cylindrical portion surrounding the first cylindrical portion and a second shield top portion extending from the upper end of the second cylindrical portion toward the vertical line and located above the first shield top portion. The inner circumferential end of the second shield top portion is horizontally opposite the outer circumferential end of the circular plate portion through a second annular gap. The processing cup has a first space divided by the first shield top portion and the second shield top portion inside, and an exhaust path communicating with the first space. An inactive gas supply unit, wherein the inner peripheral end of the top portion of the first shield is directly opposite the peripheral end face of the substrate in the horizontal direction through a first annular gap, and the inner peripheral end of the top portion of the second shield is opposite the outer peripheral end of the circular plate portion in the horizontal direction through a second annular gap, supplies inactive gas to a second space formed between the substrate held by the substrate holding unit and the shielding member, and communicating with the first space; and A drug supply unit supplies drug solution to the upper surface of the substrate held by the substrate holding unit.

Images