A method, device and electronic device for determining an etching simulation model

Abstract

The present invention discloses a method, device and electronic device for determining an etching simulation model, and relates to the field of microelectronic technology. The method for determining an etching simulation model comprises: determining the etching rate of each site on the substrate surface at the current moment according to the substrate morphology data and ion flow distribution at the current moment, and obtaining a one-dimensional etching rate data set; based on the coordinates of each site, converting the one-dimensional etching rate data set into a two-dimensional etching rate data set; expanding each two-dimensional etching rate data in the two-dimensional etching rate data set to a plane, and determining an expanded etching rate data set; based on the expanded etching rate data set and the level set function, determining the etching profile data set of the substrate at the current moment; at least based on the etching profile data set of the substrate at the current moment, determining the etching simulation model, expanding the etching rate from the substrate surface to the inside of the substrate, and ensuring the numerical stability in the simulation of the etching process and the accuracy and reliability of the established target simulation model.

Description

Technical Field

[0001] The invention relates to the field of microelectronic technology, and in particular to a method, a device and an electronic device for determining an etching simulation model. Background Art

[0002] The etching process is a relatively important technology in the field of pattern transfer in semiconductor manufacturing. The etching process can directly determine the dimensional accuracy, actual performance and integration of devices on silicon wafers. Modeling and simulating the etching process through computer-aided design can greatly shorten the development cycle of integrated circuits, reduce development costs, and provide relevant support for the development of advanced etching processes.

[0003] At present, the methods that can be used to simulate the plasma etching process include the cellular method, the line simulation method, the ray simulation method and other methods. However, the above simulation methods themselves have some shortcomings. For example, the cellular method has a large amount of calculation and cannot guarantee the stability of the simulation values. The line simulation method has low accuracy and is not easy to expand to three dimensions. The feature simulation method has low calculation efficiency, etc. These shortcomings lead to low numerical stability in the simulation of the etching process, reducing the accuracy and reliability of the etching process simulation. Summary of the invention

[0004] The purpose of the present invention is to provide a method, device and electronic equipment for determining an etching simulation model to solve the problem that the numerical stability of the existing plasma etching process simulation method is low, which reduces the accuracy and reliability of the etching process simulation.

[0005] In a first aspect, the present invention provides a method for determining an etching simulation model, comprising:

[0006] Determine the etching rate of each site on the substrate surface at the current moment according to the substrate morphology data and ion flow distribution at the current moment, and obtain a one-dimensional etching rate data set;

[0007] Based on the coordinates of each site, converting the one-dimensional etching rate data set into a two-dimensional etching rate data set;

[0008] Expanding each two-dimensional etching rate data in the two-dimensional etching rate data set to a plane to determine an expanded etching rate data set;

[0009] Based on the extended etching rate data set and the level set function, an etching profile data set of the substrate at the current moment is determined.

[0010] When the above-mentioned technical scheme is adopted, the method for determining the etching simulation model provided in the embodiment of the present application can determine the etching rate of each site on the surface of the substrate at the current moment according to the substrate morphology data and ion flow distribution at the current moment, and obtain a one-dimensional etching rate data set. Based on the coordinates of the various sites, the one-dimensional etching rate data set is converted into a two-dimensional etching rate data set, and each two-dimensional etching rate data in the two-dimensional etching rate data set is extended to a plane to determine the extended etching rate data set. Based on the extended etching rate data set and the level set function, the etching contour data set of the substrate at the current moment is determined. The etching rate can be extended from the substrate surface to the inside of the substrate, and the interface change information can be quickly and accurately tracked to ensure the numerical stability in the etching process simulation and the accuracy and reliability of the established target simulation model.

[0011] In a possible implementation, the one-dimensional etching rate data set includes the etching rate of each of the sites, and the two-dimensional etching rate data set includes the etching rate of each of the sites and the coordinate data of the points corresponding to each of the etching rates;

[0012] The one-dimensional etching rate data set is converted into a two-dimensional etching rate data set based on the coordinates of each site.

[0013] In a possible implementation, the step of extending each two-dimensional etching rate data in the two-dimensional etching rate data set to a plane to determine an extended etching rate data set includes:

[0014] The etching rate in each two-dimensional etching rate data in the two-dimensional etching rate data set is extended to the corresponding plane along the normal direction of the corresponding site to obtain an extended etching rate set.

[0015] In a possible implementation, determining the etching rate of each site on the substrate surface at the current moment according to the substrate morphology data and the ion flow distribution at the current moment to obtain a one-dimensional etching rate data set includes:

[0016] Determine the etching rate function of the substrate surface profile at the current moment based on the current substrate topography data and ion flux distribution;

[0017] A one-dimensional etching rate data set of each point on the substrate profile is determined based on the etching rate function.

[0018] In a possible implementation, determining a one-dimensional etching rate data set for each location on the substrate profile based on the etching rate function includes:

[0019] Determine substrate contour data corresponding to the substrate contour at the current moment;

[0020] Determine the position information and visible opening angle of each of the sites on the substrate based on the substrate contour data;

[0021] Determining the one-dimensional etching rate data of each of the sites based on the etching rate function, the position information and the visible opening angle, in combination with the ion incidence distribution function and the substrate normal data; determining the one-dimensional etching rate data of each of the sites;

[0022] The one-dimensional etching rate data set includes the etching rate of each of the sites.

[0023] In a possible implementation, the target etching profile data includes etching profile data evolving over time.

[0024] 7. In a possible implementation, the etching profile dataset of the substrate at the current moment is determined based on the extended etching rate dataset and the level set function, satisfying the following formula:

[0025] in, represents the Hamiltonian operator; F represents the extended etching rate set; T is the time required for etching from the substrate surface to the inside of the substrate when etching is performed at the etching rate corresponding to the current site in the extended etching rate set.

[0026] In a possible implementation, determining the etching simulation model based at least on the etching profile dataset of the substrate at the current moment includes:

[0027] Evolving over time, obtaining a data set of etching profiles of the substrate at multiple moments;

[0028] The etching simulation model is determined based on the etching profile data set of the substrate at the multiple moments.

[0029] In a second aspect, the present invention further provides a device for determining an etching simulation model, the device comprising:

[0030] A first determination module is used to determine the etching rate of each site on the substrate surface at the current moment according to the substrate morphology data and ion flow distribution at the current moment, and obtain a one-dimensional etching rate data set;

[0031] A conversion module, configured to convert the one-dimensional etching rate data set into a two-dimensional etching rate data set based on the coordinates of each site;

[0032] A second determination module is used to expand each two-dimensional etching rate data in the two-dimensional etching rate data set to a plane to determine an expanded etching rate data set;

[0033] The third determination module is used to determine the etching profile dataset of the substrate at the current moment based on the extended etching rate dataset and the level set function.

[0034] In a possible implementation, the one-dimensional etching rate data set includes the etching rate of each of the sites, and the two-dimensional etching rate data set includes the etching rate of each of the sites and the coordinate data of the points corresponding to each of the etching rates.

[0035] In a possible implementation manner, the second determining module includes:

[0036] The expansion submodule is used to expand the etching rate in each two-dimensional etching rate data in the two-dimensional etching rate data set to the corresponding plane along the normal direction of the corresponding site to obtain an expanded etching rate set.

[0037] In a possible implementation manner, the first determining module includes:

[0038] A first determination submodule is used to determine an etching rate function of a substrate surface profile at a current moment based on current substrate topography data and ion flux distribution;

[0039] The second determination submodule is used to determine a one-dimensional etching rate data set of each site on the substrate profile based on the etching rate function.

[0040] In a possible implementation manner, the second determining submodule includes:

[0041] A first determining unit, configured to determine substrate contour data corresponding to a substrate contour at a current moment;

[0042] A second determining unit, configured to determine position information and a visible opening angle of each of the sites on the substrate based on the substrate contour data;

[0043] A third determining unit, configured to determine the one-dimensional etching rate data of each of the sites based on the etching rate function, the position information and the visible opening angle, in combination with the ion incidence distribution function and the substrate normal data;

[0044] The one-dimensional etching rate data set includes the etching rate of each of the sites.

[0045] In a possible implementation, the third determination module satisfies the following formula:

[0046] in, represents the Hamiltonian operator; F represents the extended etching rate set; T is the time required for etching from the substrate surface to the inside of the substrate when etching is performed at the etching rate corresponding to the current site in the extended etching rate set.

[0047] In a possible implementation manner, the fourth determining module includes:

[0048] An acquisition submodule is used to acquire the etching profile data set of the substrate at multiple moments by evolving it over time;

[0049] The third determination submodule is used to determine the etching simulation model based on the etching profile data set of the substrate at the multiple moments.

[0050] The beneficial effects of the device for determining an etching simulation model provided in the second aspect are the same as the beneficial effects of the method for determining an etching simulation model described in the first aspect or any possible implementation of the first aspect, and are not elaborated here.

[0051] In the third aspect, the present invention also provides an electronic device, comprising: one or more processors; and one or more machine-readable media having instructions stored thereon, which, when executed by the one or more processors, enables the device to execute the method for determining the etching simulation model described in any possible implementation of the first aspect.

[0052] The beneficial effects of the electronic device provided in the third aspect are the same as the beneficial effects of the method for determining the etching simulation model described in the second aspect or any possible implementation of the second aspect, and are not elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0054] Figure 1 A schematic flow chart of a method for determining an etching simulation model provided in an embodiment of the present application is shown;

[0055] Figure 2 A schematic diagram of a level set is shown;

[0056] Figure 3 A schematic diagram of a visible opening angle provided by an embodiment of the present application is shown;

[0057] Figure 4 A schematic diagram of an outline scene of an etching outline at the current moment and the next moment provided by an embodiment of the present application is shown;

[0058] Figure 5A schematic flow chart of another method for determining an etching simulation model provided in an embodiment of the present application is shown;

[0059] Figure 6 A schematic diagram of the structure of a device for determining an etching simulation model provided in an embodiment of the present application is shown;

[0060] Figure 7 A schematic diagram of the hardware structure of an electronic device provided by an embodiment of the present invention;

[0061] Figure 8 A schematic diagram of the structure of a chip provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0062] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their order is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0063] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0064] In the present invention, "at least one" means one or more, and "plurality" means two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b, c can be single or multiple.

[0065] Figure 1 A schematic diagram of a process for determining an etching simulation model provided in an embodiment of the present application is shown, such as Figure 1 As shown, the method for determining the etching simulation model includes:

[0066] Step 101: According to the substrate morphology data and ion flow distribution at the current moment, the etching rate of each site on the substrate surface at the current moment is determined to obtain a one-dimensional etching rate data set.

[0067] In this application, the etching simulation model refers to an etching simulation model based on the level set method. The level set method is one of the methods for simulating the plasma etching process. The level set method can establish a rigorous mathematical model, quickly and accurately track interface change information, and ensure the stability of numerical values ​​during the simulation process.

[0068] Figure 2 A schematic diagram of a level set is shown in Figure 2 The level set method uses the zero isosurface of a higher-dimensional level set function (φ(x,y,t)) to implicitly express the curve under study (Γ(0)), and uses a specific velocity field to drive the boundary change of the surface. The boundary motion analysis and tracking of the curve are achieved by solving the level set equation.

[0069] Among them, the velocity function F is the velocity in the normal direction of Γ, so that φ(x,y,t)=±d, where d is the distance from the point (x,y) to Γ, positive values ​​indicate outside Γ, and negative values ​​indicate inside Γ. According to the chain rule, the level set evolution equation can be expressed as:

[0070] The above-mentioned level set evolution equation has two forms of solutions, one is a static solution and the other is a time-dependent solution. In this application, the static solution of the level set evolution equation is used. The solution of the static equation corresponding to the static level set evolution equation can be expressed as: Where T is the time required from Γ to passing through the point (x, y). In the construction model, the initial substrate can be regarded as the zero level set Γ.

[0071] In the present application, the etch rate function of the substrate surface profile at the current moment can be determined based on the current substrate morphology data and ion flux distribution, and the one-dimensional etch rate data set (etch-rate) of each site on the substrate profile can be determined based on the etch rate function.

[0072] In reactive ion etching (RIE), the etching rate function of the substrate surface profile at the current moment can be solved based on the data corresponding to the particle flow distribution. After solving the etching rate function, the one-dimensional etching rate data set of each site on the substrate profile can be determined based on the etching rate function.

[0073] Specifically, determining a one-dimensional etching rate data set for each location on the substrate profile based on the etching rate function may include the following sub-steps:

[0074] Sub-step A1: Determine substrate contour data corresponding to the substrate contour at the current moment.

[0075] Wherein, substrate contour line data can be constructed based on the signed distance function, and substrate contour data can be extracted based on the substrate contour line data, wherein the substrate contour data includes a two-dimensional array of substrate contours of a series of position coordinates. The signed distance function is a function customized according to actual etching conditions, and the actual etching conditions include the height and shape data of the hard mask, etc.

[0076] Sub-step A2: Determine the position information and visible opening angle of each of the sites on the substrate based on the substrate contour data.

[0077] The position information of each site on the substrate and the visible opening angle of each site can be determined based on the substrate contour two-dimensional array in the substrate contour data. Figure 3 A schematic diagram of a visible opening angle provided in an embodiment of the present application is shown. Figure 3 As shown, the viewing angle includes θ 1 and θ 2 .

[0078] Sub-step A3: determining the one-dimensional etching rate data of each of the sites based on the etching rate function, the position information and the visible opening angle, in combination with the ion incidence distribution function and the substrate normal data; determining the one-dimensional etching rate data of each of the sites;

[0079] The one-dimensional etching rate data set includes the etching rate of each of the sites.

[0080] In the present application, for each site, the etching rate of the site can be solved based on the etching rate function, the position information corresponding to the site, the visible opening angle, combined with the ion incidence distribution function and the substrate direction data, that is, a one-dimensional etching rate data set. The solved etching rate is one-dimensional data, and the numerical value is the etching rate of each site, which does not contain the position information of the substrate.

[0081] The ion incident angle distribution function adopts a normal distribution, and it is set that 95% of the ions are incident within a certain angle deviating from the vertical normal, and the standard deviation controls the angle of the incident ions deviating from the normal.

[0082] The expression of ion incident distribution function J(θ) is:

[0083]

[0084] Wherein, σ represents the standard deviation and θ represents the ion incident angle.

[0085] After determining the etching rate of each site on the substrate surface at the current moment according to the substrate topography data and the ion flow distribution at the current moment and obtaining a one-dimensional etching rate data set, step 102 is performed.

[0086] Step 102: Based on the coordinates of each site, convert the one-dimensional etching rate data set into a two-dimensional etching rate data set.

[0087] In the present application, the etching rate array in the one-dimensional etching rate data set does not save the position coordinates of the site. Therefore, the etching rate of each site in the one-dimensional etching rate data set can be assigned to the two-dimensional etching rate array to obtain the two-dimensional etching rate data set (speed) including the etching rate of each site and the coordinate data of the substrate corresponding to each site.

[0088] The one-dimensional etching rate data set includes the etching rate of each of the sites, and the two-dimensional etching rate data set includes the etching rate of each of the sites and the coordinate data of the sites corresponding to each of the etching rates.

[0089] Among them, the assigned two-dimensional etching rate array, the assigned coordinates are the coordinates of the corresponding substrate site, and the assignment method can be to assign two units in the vertical direction and one unit in the horizontal direction.

[0090] After determining the etching rate of each site on the substrate surface at the current moment according to the substrate morphology data and the ion flow distribution at the current moment and obtaining a one-dimensional etching rate data set, step 103 is performed.

[0091] Step 103: Expand each two-dimensional etching rate data in the two-dimensional etching rate data set to a plane to determine an expanded etching rate data set.

[0092] In the present application, reactive ion etching is carried out along the normal direction of the substrate surface. The two-dimensional etching rate data set can be expanded to each level set plane by solving the static level set equation to form an extended etching rate, that is, to determine the extended etching rate related data (f-ext).

[0093] Among them, the etching rate of the substrate site in the two-dimensional etching rate array is extended to the entire plane along the normal direction to form extended etching rate related data. The extended etching rate related data includes the extended etching rate. Specifically, it can be solved by: The extended etching rate is obtained, where represents the Hamiltonian operator, F is the f-ext array, that is, the extended etching rate, and φ represents the level set function.

[0094] After each two-dimensional etch rate data in the two-dimensional etch rate data set is expanded to a plane and the expanded etch rate data set is determined, step 104 is performed.

[0095] Step 104: Determine an etching profile dataset of the substrate at the current moment based on the extended etching rate dataset and the level set function.

[0096] In this application, the solution of the static equation corresponding to the level set evolution equation can be expressed as: in, represents the Hamiltonian operator, F is the f-ext array, that is, the extended etching rate, T is the time required to etch from the substrate surface to the inside of the substrate when etching is performed at the etching rate corresponding to the current site in the extended etching rate set, and the contour line of T is the etching profile.

[0097] For example, Figure 4 A schematic diagram of an etched contour scene at the current moment and the next moment provided by an embodiment of the present application is shown, such as Figure 4 As shown, the substrate is L, E is a hard mask or a photoresist, the etching profile at the current moment is M, and the etching profile at the next moment is N.

[0098] Step 105: Determine the etching simulation model based at least on the etching profile dataset of the substrate at the current moment.

[0099] Specifically, the etching profile data set of the substrate at multiple moments may be acquired by evolving over time; further, the etching simulation model may be determined based on the etching profile data set of the substrate at the multiple moments.

[0100] In reactive ion etching (RIE), the etching rate function of the substrate surface profile at the current moment can be first solved based on the data corresponding to the particle flow distribution. After solving the etching rate function, a one-dimensional etching rate data set of each site on the substrate profile is determined based on the etching rate function. Based on the coordinates of each site, the one-dimensional etching rate data set is converted into a two-dimensional etching rate data set. Each two-dimensional etching rate data in the two-dimensional etching rate data set is extended to a plane to determine an extended etching rate data set. Based on the extended etching rate data set and the level set function, the etching profile data set of the substrate at the current moment is determined. The etching rate corresponding to the etching rate function can be extended from the substrate surface to the inside of the substrate.

[0101] In summary, the method for determining the etching simulation model provided in the embodiment of the present application can determine the etching rate of each site on the substrate surface at the current moment according to the substrate morphology data and ion flow distribution at the current moment, and obtain a one-dimensional etching rate data set. Based on the coordinates of the various sites, the one-dimensional etching rate data set is converted into a two-dimensional etching rate data set, and each two-dimensional etching rate data in the two-dimensional etching rate data set is extended to a plane to determine the extended etching rate data set. Based on the extended etching rate data set and the level set function, the etching profile data set of the substrate at the current moment is determined. The etching rate can be extended from the substrate surface to the inside of the substrate, and the interface change information can be quickly and accurately tracked to ensure the numerical stability in the etching process simulation and the accuracy and reliability of the established target simulation model.

[0102] Figure 5 A schematic diagram of a process flow of another method for determining an etching simulation model provided in an embodiment of the present application is shown. Figure 5 As shown, the method for determining the etching simulation model includes:

[0103] Step 201: Determine the etching rate function of the substrate surface profile at the current moment based on the current substrate topography data and ion flux distribution.

[0104] In this application, the etching simulation model refers to an etching simulation model based on the level set method. The level set method is one of the methods for simulating the plasma etching process. The level set method can establish a rigorous mathematical model, quickly and accurately track interface change information, and ensure the stability of numerical values ​​during the simulation process.

[0105] Figure 2 A schematic diagram of a level set is shown in Figure 2 The level set method uses the zero isosurface of a higher-dimensional level set function (φ(x,y,t)) to implicitly express the curve under study (Γ(0)), and uses a specific velocity field to drive the boundary change of the surface. The boundary motion analysis and tracking of the curve are achieved by solving the level set equation.

[0106] Among them, the velocity function F is the velocity in the normal direction of Γ, so that φ(x,y,t)=±d, where d is the distance from the point (x,y) to Γ, positive values ​​indicate outside Γ, and negative values ​​indicate inside Γ. According to the chain rule, the level set evolution equation can be expressed as:

[0107] The above-mentioned level set evolution equation has two forms of solutions, one is a static solution and the other is a time-dependent solution. In this application, the static solution of the level set evolution equation is used. The solution of the static equation corresponding to the static level set evolution equation can be expressed as: Where T is the time required from Γ to passing through the point (x, y). In the construction model, the initial substrate can be regarded as the zero level set Γ.

[0108] In the present application, the etch rate function of the substrate surface profile at the current moment can be determined based on the current substrate morphology data and ion flux distribution, and the one-dimensional etch rate data set (etch-rate) of each site on the substrate profile can be determined based on the etch rate function.

[0109] In reactive ion etching (RIE), the etching rate function of the substrate surface profile at the current moment can be solved based on the data corresponding to the particle flow distribution.

[0110] Step 202: Determine a one-dimensional etching rate data set for each location on the substrate profile based on the etching rate function.

[0111] In reactive ion etching (RIE), the etching rate function of the substrate surface profile at the current moment can be solved based on the data corresponding to the particle flow distribution. After solving the etching rate function, the one-dimensional etching rate data set of each site on the substrate profile can be determined based on the etching rate function.

[0112] Specifically, determining a one-dimensional etching rate data set for each location on the substrate profile based on the etching rate function may include the following sub-steps:

[0113] Sub-step A1: Determine substrate contour data corresponding to the substrate contour at the current moment.

[0114] Wherein, substrate contour line data can be constructed based on the signed distance function, and substrate contour data can be extracted based on the substrate contour line data, wherein the substrate contour data includes a two-dimensional array of substrate contours of a series of position coordinates. The signed distance function is a function customized according to actual etching conditions, and the actual etching conditions include the height and shape data of the hard mask, etc.

[0115] Sub-step A2: Determine the position information and visible opening angle of each of the sites on the substrate based on the substrate contour data.

[0116] The position information of each site on the substrate and the visible opening angle of each site can be determined based on the substrate contour two-dimensional array in the substrate contour data. Figure 3 A schematic diagram of a visible opening angle provided in an embodiment of the present application is shown. Figure 3 As shown, the viewing angle includes θ 1 and θ 2 .

[0117] Sub-step A3: determining the one-dimensional etching rate data of each of the sites based on the etching rate function, the position information and the visible opening angle, in combination with the ion incidence distribution function and the substrate normal data; determining the one-dimensional etching rate data of each of the sites;

[0118] The one-dimensional etching rate data set includes the etching rate of each of the sites.

[0119] In the present application, for each site, the etching rate of the site can be solved based on the etching rate function, the position information corresponding to the site, the visible opening angle, combined with the ion incidence distribution function and the substrate direction data, that is, a one-dimensional etching rate data set. The solved etching rate is one-dimensional data, and the numerical value is the etching rate of each site, which does not contain the position information of the substrate.

[0120] The ion incident angle distribution function adopts a normal distribution, and it is set that 95% of the ions are incident within a certain angle deviating from the vertical normal, and the standard deviation controls the angle of the incident ions deviating from the normal.

[0121] The expression of the ion incident distribution function J(θ) is:

[0122]

[0123] Wherein, σ represents the standard deviation and θ represents the ion incident angle.

[0124] Step 203: assigning the etching rate of each site in the one-dimensional etching rate data set to a two-dimensional etching rate array to obtain the two-dimensional etching rate data set including the etching rate of each site and the coordinate data of the substrate corresponding to each site.

[0125] The one-dimensional etching rate data set includes the etching rate of each of the sites, and the two-dimensional etching rate data set includes the etching rate of each of the sites and the coordinate data of the sites corresponding to each of the etching rates.

[0126] In the present application, the etching rate array in the one-dimensional etching rate data set does not save the position coordinates of the site. Therefore, the etching rate of each site in the one-dimensional etching rate data set can be assigned to the two-dimensional etching rate array to obtain the two-dimensional etching rate data set (speed) including the etching rate of each site and the coordinate data of the substrate corresponding to each site.

[0127] The one-dimensional etching rate data set includes the etching rate of each of the sites, and the two-dimensional etching rate data set includes the etching rate of each of the sites and the coordinate data of the sites corresponding to each of the etching rates.

[0128] Among them, the assigned two-dimensional etching rate array, the assigned coordinates are the coordinates of the corresponding substrate site, and the assignment method can be to assign two units in the vertical direction and one unit in the horizontal direction.

[0129] Step 204: Expand each two-dimensional etching rate data in the two-dimensional etching rate data set to a plane to determine an expanded etching rate data set.

[0130] The etching rate in each two-dimensional etching rate data in the two-dimensional etching rate data set is extended to the corresponding plane along the normal direction of the corresponding site to obtain an extended etching rate set.

[0131] In the present application, reactive ion etching is carried out along the normal direction of the substrate surface. The two-dimensional etching rate data set can be expanded to each level set plane by solving the static level set equation to form an extended etching rate, that is, to determine the extended etching rate related data (f-ext).

[0132] Among them, the etching rate of the substrate site in the two-dimensional etching rate array is extended to the entire plane along the normal direction to form extended etching rate related data. The extended etching rate related data includes the extended etching rate. Specifically, it can be solved by: The extended etching rate is obtained, where represents the Hamiltonian operator, F is the f-ext array, that is, the extended etching rate, and φ represents the level set function.

[0133] Step 205: Determine an etching profile dataset of the substrate at the current moment based on the extended etching rate dataset and the level set function.

[0134] The target etching profile data includes etching profile data evolving over time.

[0135] In this application, the solution of the static equation corresponding to the level set evolution equation can be expressed as: Among them, represents the Hamiltonian operator, F is the f-ext array, that is, the extended etching rate, φ represents the level set function, T is the time required to etch from the substrate surface to the inside of the substrate when etching is performed at the etching rate corresponding to the current site in the extended etching rate set, and the contour line of T is the etching profile.

[0136] For example, Figure 4 A schematic diagram of an etched contour scene at the current moment and the next moment provided by an embodiment of the present application is shown, such as Figure 4 As shown, the etching profile at the current moment is M, and the etching profile at the next moment is N.

[0137] Step 206: Determine the etching simulation model based at least on the etching profile dataset of the substrate at the current moment.

[0138] Specifically, the etching profile data set of the substrate at multiple moments may be acquired by evolving over time; further, the etching simulation model may be determined based on the etching profile data set of the substrate at the multiple moments.

[0139] In reactive ion etching (RIE), the etching rate function of the substrate surface profile at the current moment can be first solved based on the data corresponding to the particle flow distribution. After solving the etching rate function, a one-dimensional etching rate data set of each site on the substrate profile is determined based on the etching rate function. Based on the coordinates of each site, the one-dimensional etching rate data set is converted into a two-dimensional etching rate data set. Each two-dimensional etching rate data in the two-dimensional etching rate data set is extended to a plane to determine an extended etching rate data set. Based on the extended etching rate data set and the level set function, the etching profile data set of the substrate at the current moment is determined. The etching rate corresponding to the etching rate function can be extended from the substrate surface to the inside of the substrate.

[0140] In summary, the method for determining the etching simulation model provided in the embodiment of the present application can determine the etching rate of each site on the substrate surface at the current moment according to the substrate morphology data and ion flow distribution at the current moment, and obtain a one-dimensional etching rate data set. Based on the coordinates of the various sites, the one-dimensional etching rate data set is converted into a two-dimensional etching rate data set, and each two-dimensional etching rate data in the two-dimensional etching rate data set is extended to a plane to determine the extended etching rate data set. Based on the extended etching rate data set and the level set function, the etching profile data set of the substrate at the current moment is determined. The etching rate can be extended from the substrate surface to the inside of the substrate, and the interface change information can be quickly and accurately tracked to ensure the numerical stability in the etching process simulation and the accuracy and reliability of the established target simulation model.

[0141] Figure 6 A schematic diagram of the structure of a device for determining an etching simulation model provided in an embodiment of the present application is shown. Figure 6 As shown, the device comprises:

[0142] A first determination module 301 is used to determine the etching rate of each site on the substrate surface at the current moment according to the substrate morphology data and ion flow distribution at the current moment, and obtain a one-dimensional etching rate data set;

[0143] A conversion module 302, configured to convert the one-dimensional etching rate data set into a two-dimensional etching rate data set based on the coordinates of each site;

[0144] A second determination module 303 is used to expand each two-dimensional etching rate data in the two-dimensional etching rate data set to a plane to determine an expanded etching rate data set;

[0145] A third determination module 304 is used to determine an etching profile dataset of the substrate at the current moment based on the extended etching rate dataset and the level set function;

[0146] The fourth determination module 305 is used to determine the etching simulation model based on at least the etching profile dataset of the substrate at the current moment.

[0147] Optionally, the one-dimensional etching rate data set includes the etching rate of each of the sites, and the two-dimensional etching rate data set includes the etching rate of each of the sites and the coordinate data of the points corresponding to each of the etching rates; the conversion module includes:

[0148] The etching rate of each site in the one-dimensional etching rate data set is assigned to a two-dimensional etching rate array to obtain the two-dimensional etching rate data set including the etching rate of each site and the coordinate data of the substrate corresponding to each site.

[0149] In a possible implementation, the one-dimensional etching rate data set includes the etching rate of each of the sites, and the two-dimensional etching rate data set includes the etching rate of each of the sites and the coordinate data of the points corresponding to each of the etching rates.

[0150] In a possible implementation manner, the second determining module includes:

[0151] The expansion submodule is used to expand the etching rate in each two-dimensional etching rate data in the two-dimensional etching rate data set to the corresponding plane along the normal direction of the corresponding site to obtain an expanded etching rate set.

[0152] In a possible implementation manner, the first determining module includes:

[0153] A first determination submodule is used to determine an etching rate function of a substrate surface profile at a current moment based on current substrate topography data and ion flux distribution;

[0154] The second determination submodule is used to determine a one-dimensional etching rate data set of each site on the substrate profile based on the etching rate function.

[0155] In a possible implementation manner, the second determining submodule includes:

[0156] A first determining unit, configured to determine substrate contour data corresponding to a substrate contour at a current moment;

[0157] A second determining unit, configured to determine position information and a visible opening angle of each of the sites on the substrate based on the substrate contour data;

[0158] A third determining unit, configured to determine the one-dimensional etching rate data of each of the sites based on the etching rate function, the position information and the visible opening angle, in combination with the ion incidence distribution function and the substrate normal data;

[0159] The one-dimensional etching rate data set includes the etching rate of each of the sites.

[0160] In a possible implementation, the third determination module satisfies the following formula:

[0161] in, represents the Hamiltonian operator; F represents the extended etching rate set; T is the time required for etching from the substrate surface to the inside of the substrate when etching is performed at the etching rate corresponding to the current site in the extended etching rate set.

[0162] In a possible implementation manner, the fourth determining module includes:

[0163] An acquisition submodule is used to acquire the etching profile data set of the substrate at multiple moments by evolving it over time;

[0164] The third determination submodule is used to determine the etching simulation model based on the etching profile data set of the substrate at the multiple moments.

[0165] The device for determining the etching simulation model provided in the embodiment of the present application can determine the etching rate of each site on the surface of the substrate at the current moment according to the substrate morphology data and ion flow distribution at the current moment, and obtain a one-dimensional etching rate data set. Based on the coordinates of the various sites, the one-dimensional etching rate data set is converted into a two-dimensional etching rate data set, and each two-dimensional etching rate data in the two-dimensional etching rate data set is expanded to a plane to determine the expanded etching rate data set. Based on the expanded etching rate data set and the level set function, the etching contour data set of the substrate at the current moment is determined. The etching rate can be expanded from the substrate surface to the inside of the substrate, and the interface change information can be quickly and accurately tracked, thereby ensuring the numerical stability in the etching process simulation and ensuring the accuracy and reliability of the established target simulation model.

[0166] The present invention provides a device for determining an etching simulation model, which can be implemented as follows: Figures 1 to 5 To avoid repetition, any of the methods shown for expanding the etching rate in the etching simulation model will not be described again here.

[0167] The electronic device in the embodiment of the present invention may be a device, or a component, integrated circuit, or chip in a terminal. The device may be a mobile electronic device or a non-mobile electronic device. For example, the mobile electronic device may be a mobile phone, a tablet computer, a laptop computer, a PDA, an in-vehicle electronic device, a wearable device, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA), etc. The non-mobile electronic device may be a server, a network attached storage (NAS), a personal computer (PC), a television (TV), a teller machine, or a self-service machine, etc., which is not specifically limited in the embodiment of the present invention.

[0168] The electronic device in the embodiment of the present invention may be a device having an operating system. The operating system may be an Android operating system, an iOS operating system, or other possible operating systems, which are not specifically limited in the embodiment of the present invention.

[0169] Figure 7 FIG. 1 is a schematic diagram showing the hardware structure of an electronic device provided by an embodiment of the present invention. Figure 7 As shown, the electronic device 400 includes a processor 410 .

[0170] like Figure 7 As shown, the processor 410 may be a general-purpose central processing unit (CPU), a microprocessor, an application-specific integrated circuit (ASIC), or one or more integrated circuits for controlling the execution of the program of the present invention.

[0171] like Figure 7 As shown, the electronic device 400 may further include a communication line 440. The communication line 440 may include a path for transmitting information between the components.

[0172] Optional, such as Figure 7 As shown, the electronic device may further include a communication interface 420. There may be one or more communication interfaces 420. The communication interface 420 may use any transceiver or other device for communicating with other devices or communication networks.

[0173] Optional, such as Figure 7As shown, the electronic device may further include a memory 430. The memory 430 is used to store computer-executable instructions for executing the solution of the present invention, and is controlled to execute by a processor. The processor is used to execute the computer-executable instructions stored in the memory, thereby implementing the method provided by the embodiment of the present invention.

[0174] like Figure 7 As shown, the memory 430 may be a read-only memory (ROM) or other types of static storage devices that can store static information and instructions, a random access memory (RAM) or other types of dynamic storage devices that can store information and instructions, or an electrically erasable programmable read-only memory (EEPROM), a compact disc read-only memory (CD-ROM) or other optical disc storage, optical disc storage (including compressed optical disc, laser disc, optical disc, digital versatile disc, Blu-ray disc, etc.), a magnetic disk storage medium or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto. The memory 430 may exist independently and be connected to the processor 410 via a communication line 440. The memory 430 may also be integrated with the processor 410.

[0175] Optionally, the computer-executable instructions in the embodiment of the present invention may also be referred to as application program codes, which is not specifically limited in the embodiment of the present invention.

[0176] In a specific implementation, as an example, Figure 7 As shown, the processor 410 may include one or more CPUs, such as Figure 7 CPU0 and CPU1 in.

[0177] In a specific implementation, as an example, Figure 7 As shown, the terminal device may include multiple processors, such as Figure 7 The first processor 4101 and the second processor 4102 in the embodiment of the present invention are shown in FIG. Each of these processors can be a single-core processor or a multi-core processor.

[0178] Figure 8 Schematic diagram of the structure of the chip provided by the embodiment of the present invention. Figure 8 As shown, the chip 500 includes one or more (including two) processors 410 .

[0179] Optional, such as Figure 8As shown, the chip also includes a communication interface 420 and a memory 430. The memory 430 may include a read-only memory and a random access memory, and provide operation instructions and data to the processor. A portion of the memory may also include a non-volatile random access memory (NVRAM).

[0180] In some embodiments, Figure 8 As shown, the memory 430 stores the following elements, execution modules or data structures, or their subsets, or their extended sets.

[0181] In the embodiment of the present invention, Figure 8 As shown, the corresponding operation is performed by calling the operation instruction stored in the memory (the operation instruction may be stored in the operating system).

[0182] like Figure 8 As shown, the processor 410 controls the processing operations of any one of the terminal devices, and the processor 410 may also be referred to as a central processing unit (CPU).

[0183] like Figure 8 As shown, the memory 430 may include a read-only memory and a random access memory, and provide instructions and data to the processor. A portion of the memory 430 may also include an NVRAM. For example, in an application, the memory, the communication interface, and the memory are coupled together through a bus system, wherein the bus system may include a power bus, a control bus, and a status signal bus in addition to a data bus. However, for the sake of clarity, in Figure 8 Various buses are labeled as bus system 540 .

[0184] like Figure 8As shown, the method disclosed in the above embodiment of the present invention can be applied to a processor or implemented by a processor. The processor may be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above method can be completed by an integrated logic circuit of hardware in the processor or an instruction in the form of software. The above processor may be a general-purpose processor, a digital signal processor (digital signal processing, DSP), an ASIC, a field-programmable gate array (field-programmable gate array, FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components. The methods, steps and logic block diagrams disclosed in the embodiments of the present invention can be implemented or executed. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc. The steps of the method disclosed in the embodiment of the present invention can be directly embodied as being executed by a hardware decoding processor, or executed by a combination of hardware and software modules in the decoding processor. The software module may be located in a mature storage medium in the field such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is located in a memory, and the processor reads the information in the memory and completes the steps of the above method in combination with its hardware.

[0185] On the one hand, a computer-readable storage medium is provided, in which instructions are stored. When the instructions are executed, the functions performed by the terminal device in the above embodiment are implemented.

[0186] On the one hand, a chip is provided, which is applied to a terminal device. The chip includes at least one processor and a communication interface. The communication interface is coupled to at least one processor, and the processor is used to run instructions to implement the functions performed by the determination method of the etching simulation model in the above embodiment.

[0187] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented by software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer programs or instructions. When the computer program or instruction is loaded and executed on a computer, the process or function described in the embodiment of the present invention is executed in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, a terminal, a user device or other programmable device. The computer program or instruction can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer program or instruction can be transmitted from one website site, computer, server or data center to another website site, computer, server or data center by wired or wireless means. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server, data center, etc. that integrates one or more available media. The available medium can be a magnetic medium, such as a floppy disk, a hard disk, or a tape; it can also be an optical medium, such as a digital video disc (DVD); it can also be a semiconductor medium, such as a solid state drive (SSD).

[0188] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0189] Although the present invention has been described in conjunction with specific features and embodiments thereof, it is apparent that various modifications and combinations may be made thereto without departing from the spirit and scope of the present invention. Accordingly, this specification and the accompanying drawings are merely exemplary illustrations of the present invention as defined by the appended claims and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the present invention. Obviously, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, the present invention is intended to include such modifications and variations if they fall within the scope of the claims of the present invention and their equivalents.

Claims

1. A method for determining an etching simulation model, It is characterized in that Applied to etching a substrate, the method comprises: According to the substrate morphology data and ion flow distribution at the current moment, the etching rate of each point on the substrate surface at the current moment is determined to obtain a one-dimensional etching rate data set, including: determining an etching rate function of the substrate surface profile at the current moment based on the substrate morphology data and ion flow distribution at the current moment; determining a one-dimensional etching rate data set of each point on the substrate profile based on the etching rate function; Based on the coordinates of each site, converting the one-dimensional etching rate data set into a two-dimensional etching rate data set; Expanding each two-dimensional etching rate data in the two-dimensional etching rate data set to a plane to determine an expanded etching rate data set, including: expanding the etching rate in each two-dimensional etching rate data in the two-dimensional etching rate data set along the normal direction of the corresponding site to the corresponding plane to obtain an expanded etching rate set; Based on the extended etching rate data set and the level set function, determining the etching profile data set of the substrate at the current moment includes satisfying the formula: in, represents the Hamiltonian operator; F represents the extended etching rate set; T is the time required for etching from the substrate surface to the inside of the substrate when etching is performed at the etching rate corresponding to the current position in the extended etching rate data set; The etching simulation model is determined based at least on the etching profile data set of the substrate at the current moment.

2. The method according to claim 1, It is characterized in that The one-dimensional etching rate data set includes the etching rate of each of the sites, and the two-dimensional etching rate data set includes the etching rate of each of the sites and the coordinate data of the sites corresponding to each of the etching rates.

3. The method according to claim 1, It is characterized in that The one-dimensional etching rate data set for each location on the substrate profile is determined based on the etching rate function, comprising: Determine substrate contour data corresponding to the substrate contour at the current moment; Determine the position information and visible opening angle of each of the sites on the substrate based on the substrate contour data; Based on the etching rate function, the position information and the visible opening angle, combined with the ion incidence distribution function and substrate normal data, determine the one-dimensional etching rate data of each of the sites; The one-dimensional etching rate data set includes the etching rate of each of the sites.

4. The method according to any one of claims 1 to 3, It is characterized in that The determining of the etching simulation model based at least on the etching profile data set of the substrate at the current moment comprises: Evolving over time, obtaining a data set of etching profiles of the substrate at multiple moments; The etching simulation model is determined based on the etching profile data set of the substrate at the multiple moments.

5. A device for determining an etching simulation model, It is characterized in that The device comprises: A first determination module is used to determine the etching rate of each site on the substrate surface at the current moment according to the substrate morphology data and the ion flow distribution at the current moment, so as to obtain a one-dimensional etching rate data set; the first determination module includes: a first determination submodule, used to determine the etching rate function of the substrate surface profile at the current moment based on the current substrate morphology data and the ion flow distribution; a second determination submodule, used to determine the one-dimensional etching rate data set of each site on the substrate profile based on the etching rate function; A conversion module, configured to convert the one-dimensional etching rate data set into a two-dimensional etching rate data set based on the coordinates of each site; A second determination module is used to expand each two-dimensional etching rate data in the two-dimensional etching rate data set to a plane to determine an expanded etching rate data set; the second determination module includes: an expansion submodule, which is used to expand the etching rate in each two-dimensional etching rate data in the two-dimensional etching rate data set along the normal direction of the corresponding site to the corresponding plane to obtain an expanded etching rate set; The third determination module is used to determine the etching profile dataset of the substrate at the current moment based on the extended etching rate dataset and the level set function; the third determination module satisfies the formula: in, represents the Hamiltonian operator; F represents the extended etching rate set; T is the time required for etching from the substrate surface to the inside of the substrate when etching is performed at the etching rate corresponding to the current position in the extended etching rate data set; The fourth determination module is used to determine the etching simulation model based on at least the etching profile data set of the substrate at the current moment.

6. The device according to claim 5, It is characterized in that The one-dimensional etching rate data set includes the etching rate of each of the sites, and the two-dimensional etching rate data set includes the etching rate of each of the sites and the coordinate data of the sites corresponding to each of the etching rates.

7. The device according to claim 5, It is characterized in that The second determining submodule includes: A first determining unit, configured to determine substrate contour data corresponding to a substrate contour at a current moment; A second determining unit, configured to determine position information and a visible opening angle of each of the sites on the substrate based on the substrate contour data; A third determination unit, configured to determine the one-dimensional etching rate data of each of the sites based on the etching rate function, the position information and the visible opening angle, in combination with the ion incidence distribution function and the substrate normal data; The one-dimensional etching rate data set includes the etching rate of each of the sites.

8. The device according to claim 5, It is characterized in that The fourth determination module comprises: An acquisition submodule is used to acquire the etching profile data set of the substrate at multiple moments by evolving it over time; The third determination submodule is used to determine the etching simulation model based on the etching profile data set of the substrate at the multiple moments.

9. An electronic device, It is characterized in that include: one or more processors; and one or more machine-readable media having instructions stored thereon, which, when executed by the one or more processors, enable the method for determining an etching simulation model as described in any one of claims 1 to 4 to be executed.

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