Driving circuit for driving light-emitting unit

Abstract

The present disclosure discloses a driving circuit for driving a light-emitting unit, which includes a driving transistor, a compensation transistor and a switch transistor for driving the light-emitting unit. The driving transistor includes a gate terminal, a source terminal and a drain terminal. The compensation transistor includes a source terminal, a drain terminal electrically connected to the gate terminal of the driving transistor and a gate terminal. The switch transistor includes a gate terminal, a source terminal and a drain terminal electrically connected to the source terminal of the compensation transistor.

Description

Technical Field

[0001] The present disclosure relates to a driving circuit for driving a light-emitting unit. Background Art

[0002] Light-emitting devices have been widely used in various fields, such as display, lighting, etc. A driving circuit for driving a light-emitting unit affects the operation of the light-emitting device, and therefore plays an important role in the design of the light-emitting device. Summary of the invention

[0003] The present disclosure is directed to a driving circuit for driving a light-emitting unit and improving the light-emitting quality thereof.

[0004] According to an embodiment of the present disclosure, a driving circuit for driving a light-emitting unit includes a driving transistor, a compensation transistor, and a switch transistor. The driving transistor includes a gate terminal, a source terminal, and a drain terminal. The compensation transistor includes a gate terminal electrically connected to the gate terminal of the driving transistor, a source terminal, and a drain terminal electrically connected to the gate terminal of the driving transistor. The switch transistor includes a gate terminal, a source terminal, and a drain terminal electrically connected to the source terminal of the compensation transistor.

[0005] In order to make the above content easier to understand, the following describes the details with reference to several embodiments and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The accompanying drawings are included to provide a further understanding of the present disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the present disclosure and together with the description serve to explain the principles of the present invention.

[0007] Figure 1 The diagram illustrates a driving circuit for driving a light-emitting unit according to some embodiments of the present disclosure;

[0008] Figure 2 shows a driving circuit in a reset phase according to some embodiments of the present disclosure;

[0009] Figure 3 shows a driving circuit in a scanning phase according to some embodiments of the present disclosure;

[0010] Figure 4 The driving circuit of the light emitting stage according to some embodiments of the present disclosure is shown;

[0011] Figure 5 illustrates a top view of a transistor layout according to an embodiment;

[0012] Figure 6 A top view of the layout of a single sub-transistor is illustrated;

[0013] Figure 7illustrates a cross-sectional view of a single sub-transistor according to an embodiment;

[0014] Figure 8 The diagram illustrates a driving circuit for driving a light-emitting unit according to some embodiments of the present disclosure;

[0015] Fig. 9 The diagram illustrates a driving circuit for driving a light-emitting unit according to some embodiments of the present disclosure;

[0016] Fig.10 The diagram illustrates a driving circuit for driving a light-emitting unit according to some embodiments of the present disclosure;

[0017] Fig.11 The diagram illustrates a driving circuit for driving a light-emitting unit according to some embodiments of the present disclosure;

[0018] Fig.12 The diagram illustrates a driving circuit for driving a light-emitting unit according to some embodiments of the present disclosure;

[0019] Fig.13 The diagram illustrates a driving circuit for driving a light-emitting unit according to some embodiments of the present disclosure;

[0020] Fig.14 The diagram illustrates a driving circuit for driving a light-emitting unit according to some embodiments of the present disclosure.

[0021] Description of Reference Numerals

[0022] 100A, 100B, 100C, 200A, 200B, 200C, 300A, 300B: drive circuit

[0023] 110, 310: Light-emitting unit

[0024] 120: driving transistor

[0025] 120G: Gate terminal of driver transistor

[0026] 120S: Source terminal of the driver transistor

[0027] 120D: Drain terminal of the driver transistor

[0028] 130: Compensation transistor

[0029] 130G: Gate terminal of compensation transistor

[0030] 130S: Source terminal of compensation transistor

[0031] 130D: Drain terminal of compensation transistor

[0032] 140: Switching transistor

[0033] 140G: Gate terminal of the switching transistor

[0034] 140S: Source terminal of the switching transistor

[0035] 140D: Drain terminal of the switching transistor

[0036] 150: Reset transistor

[0037] 150G: Reset transistor gate terminal

[0038] 150S: Reset the source terminal of the transistor

[0039] 150D: Drain terminal of reset transistor

[0040] 160: first light emitting transistor

[0041] 160G: Gate terminal of the first light emitting transistor

[0042] 160S: Source terminal of the first light emitting transistor

[0043] 160D: drain terminal of the first light emitting transistor

[0044] Cpar: parasitic capacitance

[0045] Vdd: driving voltage

[0046] Vss: another driving voltage

[0047] Vrst: reset voltage

[0048] Crst: Reset current

[0049] Csw: Switching current

[0050] Cem: luminous current

[0051] CDV: Compensated Data Voltage

[0052] DL: Data line

[0053] DT: Data voltage

[0054] A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q: Node

[0055] CGL: Common Gate Layer

[0056] CSL: Common Source Layer

[0057] CDL: Common Drain Layer

[0058] SCL: Semiconductor Layer

[0059] IL: Insulation layer

[0060] GE: Gate Electrode

[0061] SE: Source electrode

[0062] DE: Drain electrode

[0063] 10: Transistor

[0064] 12: Sub-transistor

[0065] CH: Channel area

[0066] CHW: Channel Width

[0067] CHL: Channel Length

[0068] 170:Selection Unit

[0069] 172: Selecting light-emitting transistors

[0070] 172G: Select the gate terminal of the light emitting transistor

[0071] 172S: Select the source terminal of the light emitting transistor

[0072] 172D: Select the drain terminal of the light emitting transistor

[0073] 174: Select reset transistor

[0074] 174G selects the gate terminal of the reset transistor

[0075] 174S: Select the source terminal of the reset transistor

[0076] 174D: Select the drain terminal of the reset transistor

[0077] 176: Select switch transistor

[0078] 176G selects the gate terminal of the switch transistor

[0079] 176S: Select the source terminal of the switch transistor

[0080] 176D: Select the drain terminal of the switch transistor

[0081] 180: Control unit

[0082] 182: first control transistor

[0083] 182G: Gate terminal of the first control transistor

[0084] 182S: Source terminal of the first control transistor

[0085] 182D: Drain terminal of the first control transistor

[0086] 184: Second control transistor

[0087] 184G: Gate terminal of the second control transistor

[0088] 184S: Source terminal of the second control transistor

[0089] 184D: Drain terminal of the second control transistor

[0090] 190, 380: Storage capacitor

[0091] Vref: reference voltage

[0092] 210: second light emitting transistor

[0093] 210G: Gate terminal of the second light emitting transistor

[0094] 210S: Source terminal of the second light emitting transistor

[0095] 210D: Drain terminal of the second light emitting transistor

[0096] 220: third light emitting transistor

[0097] 220G: Gate terminal of the third light emitting transistor

[0098] 220S: Source terminal of the third light emitting transistor

[0099] 220D: drain terminal of the third light emitting transistor

[0100] 230: Other switching transistors

[0101] 230G: Gate terminal of other switching transistors

[0102] 230S: Source terminal of other switching transistors

[0103] 230D: Drain terminal of other switching transistors

[0104] 320: N-type driver transistor

[0105] 330: N-type compensation transistor

[0106] 342: N-type first switch transistor

[0107] 344: N-type second switch transistor

[0108] 352: N-type first reset transistor

[0109] 354: N-type second reset transistor

[0110] 362: N-type first light emitting transistor

[0111] 364: N-type second light emitting transistor

[0112] 366: N-type third light-emitting transistor

[0113] 368: N-type fourth light emitting transistor

[0114] 372: N-type first control transistor

[0115] 374: N-type second control transistor DETAILED DESCRIPTION

[0116] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals will be used in the drawings and the description to refer to the same or like parts.

[0117] Certain words are used throughout this disclosure and in the appended claims to refer to specific components. Those skilled in the art will appreciate that display device manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following description and claims, the words "including" and "comprising" are open-ended words and should therefore be interpreted as "including but not limited to..."

[0118] The electrical connection described in the present disclosure may refer to a direct connection or an indirect connection. In the case of a direct connection, the endpoints of two components on the circuit are directly connected or connected to each other through a wire segment. In the case of an indirect connection, a switch, a diode, a capacitor, an inductor, a resistor, other suitable components, or a combination of the above components are located between the endpoints of two components on the circuit. However, the present disclosure is not limited thereto.

[0119] Although the terms first, second, third, etc. can be used to describe a variety of components, the components are not limited to these terms. These terms are only used to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but may be replaced by first, second, third, etc. according to the order of the components declared in the claims. Therefore, in the following description, the first component may be the second component in the claims.

[0120] In the present disclosure, adjacent circuit units may share the same part or shared wire, or may include specific parts thereof. In addition, any numerical value disclosed herein may imply a nearby range of the disclosed numerical value. For example, if the first numerical value is equal to the second numerical value, it means that there may be an error of about 10% between the first numerical value and the second numerical value.

[0121] It should be noted that the following embodiments may replace, reorganize, or mix the technical features in several different embodiments to implement other embodiments without departing from the spirit of the present disclosure.

[0122] Figure 1 The diagram illustrates a driving circuit for driving a light-emitting unit according to an embodiment of the present disclosure. The driving circuit 100A for driving the light-emitting unit 110 may include at least one driving transistor 120, a compensation transistor 130, and a switch transistor 140. The driving transistor 120 includes a gate terminal 120G, a source terminal 120S, and a drain terminal 120D. The compensation transistor 130 includes a gate terminal 130G electrically connected to the gate terminal 120G of the driving transistor 120, a source terminal 130S, and a drain terminal 130D electrically connected to the gate terminal 120G of the driving transistor 120. The switch transistor 140 includes a gate terminal 140G electrically connected to the scan signal SCN, a source terminal 140S, and a drain terminal 140D electrically connected to the source terminal 130S of the compensation transistor 130. The driving circuit 100A may further include a data line DL, and the source terminal 140S of the switch transistor 140 is electrically connected to the data line DL. In addition, the source terminal 120S of the driving transistor 120 may be electrically connected to the driving voltage Vdd. In an embodiment, the light emitting unit 110 may emit light by driving current, and the drain terminal 120D of the driving transistor 120 may be electrically connected to the light emitting unit 110 to control the driving current. Specifically, the light emitting unit 110 may be a current driving component such as a light emitting diode, and the light emitting diode (LED) may include an inorganic light emitting diode, an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini-LED), a micro light emitting diode (micro-LED), or a quantum dot light emitting diode (QLED or QDLED), but the present disclosure is not limited thereto.

[0123] In the driving circuit 100A, the scanning signal SCN electrically connected to the gate terminal 140G of the switching transistor 140 can determine whether the switching transistor 140 is turned on or off. The on / off operation of the switching transistor 140 can determine whether the data voltage DT on the data line DL is transmitted to the compensation transistor 130. In other words, the data voltage DT on the data line DL is transmitted to the source terminal 130S of the compensation transistor 130 through the source terminal 140S of the switching transistor 140 and the drain terminal 140D of the switching transistor 140. The drain terminal 130D of the compensation transistor 130 and the gate terminal 130G of the compensation transistor 130 are both electrically connected to the gate terminal 120G of the driving transistor 120 at the node A. Figure 1Node A represents the electrical connection of gate terminal 120G, gate terminal 130G and drain terminal 130D. In an embodiment, since gate terminal 130G is electrically connected to drain terminal 130D, compensation transistor 130 has a diode connection configuration. Since compensation transistor 130 has a diode connection configuration, under the compensation of compensation transistor 130, data voltage DT on source terminal 130S becomes compensation data voltage CDV and is provided to node A. In some embodiments, compensation data voltage CDV may be the result of subtracting the absolute value of threshold voltage of compensation transistor 130 from data voltage DT voltage value. In addition, driving transistor 120 and compensation transistor 130 may have substantially the same threshold voltage. Compensation data voltage CDV may turn on driving transistor 120, thereby allowing driving voltage Vdd to be provided to drain terminal 120D of driving transistor 120.

[0124] The driving circuit 100A may further include a reset transistor 150 and a first light emitting transistor 160. The reset transistor 150 is electrically connected to the gate terminal 120G of the driving transistor 120, and the first light emitting transistor 160 is electrically connected between the drain terminal 120D of the driving transistor 120 and the light emitting unit 110. The reset transistor 150 may include a gate terminal 150G electrically connected to a reset signal RST, a source terminal 150S electrically connected to the gate terminal 120G of the driving transistor 120 by a node B, and a drain terminal 150D electrically connected to a reset voltage Vrst. Figure 1 , node B represents a node on a path to which the source terminal 150S of the reset transistor 150 is electrically connected, and this electrical connection path is electrically connected to the gate terminal 120G, the gate terminal 130G, and the drain terminal 130D. In some embodiments, node A and node B may be the same point. In some alternative embodiments, the source terminal 150S of the reset transistor 150 may be electrically connected to the gate terminal 120G of the drive transistor 120 through other nodes, and the present disclosure is not limited thereto. The first light-emitting transistor 160 may include a gate terminal 160G electrically connected to the light-emitting signal EM, a source terminal 160S electrically connected to the drain terminal 120D of the drive transistor 120, and a drain terminal 160D electrically connected to the light-emitting unit 110.

[0125] In the present embodiment, the driving transistor 120 may be a transistor of a larger size, while the compensating transistor 130 may have a smaller size. In some embodiments, the size of the driving transistor 120 may be 1 to 50 times the size of the compensating transistor 130, but the present disclosure is not limited thereto. Due to the size difference, the coupling effect between the ends of the driving transistor 120 is more obvious than the coupling effect between the ends of the compensating transistor 130. In some embodiments, a parasitic capacitor Cpar may be formed between the gate terminal 120G of the driving transistor 120 and the source terminal 120S of the driving transistor 120 and affect the operation of the driving circuit 100A. For example, the parasitic capacitor Cpar may maintain the compensation data voltage CDV provided to the node A within a certain range, and the loss from the compensating transistor 130 may be reduced, so that the light-emitting unit 110 may emit light stably and reduce unexpected fluctuations.

[0126] In an embodiment, the driving circuit 100A includes five transistors, namely, a driving transistor 120, a compensation transistor 130, a switch transistor 140, a reset transistor 150, and a first light-emitting transistor 160, and the five transistors can be transistors of the same conductivity type. For example, the five transistors can all be P-type transistors, and the on-voltage can be a low logic voltage, and the off-voltage can be a high logic voltage, but the present disclosure is not limited to this. The operation phases of the driving circuit 100A can include a reset phase, a scanning phase, and a light-emitting phase, and each phase is respectively as follows: Figure 2 , Figure 3 and Figure 4 The five transistors are all P-type transistors, but the present disclosure is not limited thereto. In some embodiments, the five transistors are all N-type transistors. In some other embodiments, some transistors may be P-type transistors, while others may be N-type transistors.

[0127] exist Figure 2 1 shows the driving circuit 100A in the reset phase, at which the switch transistor 140 and the first light emitting transistor 160 are turned off, and the reset transistor 150 is turned on. When the reset transistor 150 is turned on, the reset voltage Vrst is provided to the node A and the node B with the reset current Crst. In an embodiment, the reset voltage Vrst is sufficient to turn on the driving transistor 120 and the compensation transistor 130, and can be stored by the parasitic capacitor Cpar. In other words, even if the reset transistor 150 is turned off, the reset voltage Vrst provided to the node A and the node B can still maintain the conduction of the driving transistor 120 and the compensation transistor 130.

[0128] exist Figure 31 shows the driving circuit 100A entering the scanning phase after the reset phase, at which time the first light emitting transistor 160 remains turned off, the reset transistor 150 is turned off and the switch transistor 140 is turned on. When the switch transistor 140 is turned on, the data voltage DT on the data line DL is allowed to pass through the switch transistor 140 and is transmitted to the source terminal 130S of the compensation transistor 130, and because the source terminal 130S of the compensation transistor 130 is electrically connected to the drain terminal 130D of the compensation transistor 130, a switching current Csw is generated and the switching current Csw flows from the data line DL through the switch transistor 140 and the compensation transistor 130 to the node B and the node A. Since the diode connection configuration of the compensation transistor 130 allows the data voltage DT on the data line DL to be compensated, the compensated data voltage CDV can be provided to the node A and stored due to the parasitic capacitance Cpar in the driving transistor 120. In some embodiments, the compensation data voltage CDV may be the result of the voltage value of the data voltage DT minus the absolute value of the threshold voltage of the compensation transistor 130, and the compensation data voltage CDV enables the driving transistor 120 to be turned on. In addition, after the compensation voltage CDV is stored at the node A, the compensation transistor 130 may become a cut-off state. In other words, when the compensation data voltage CDV is provided to the node A and stored, the switching current Csw may disappear. The voltage value of the compensation data voltage CDV may exceed the threshold gate-source voltage of the driving transistor 120 (the gate-source voltage is understood as the voltage difference between the gate and the source of the transistor) and turn on the driving transistor 120.

[0129] exist Figure 4 , a driving circuit 100A entering a light-emitting phase after a scanning phase is shown, at which time the reset transistor 150 remains turned off, the switch transistor 140 may be turned off, and the first light-emitting transistor 160 may be turned on. In the light-emitting phase, since the parasitic capacitor Cpar stores the compensation data voltage CDV at the node A (i.e., the gate terminal 120G of the driving transistor 120), the driving transistor 120 remains turned on, that is, the gate-source voltage of the driving transistor 120 is maintained within a certain range by the parasitic capacitor Cpar. Therefore, the driving voltage Vdd is allowed to be transmitted to one end of the light-emitting unit 110, and the other end of the light-emitting unit 110 is electrically connected to other driving voltages Vss. In some embodiments, the driving voltage Vdd may be a high-level voltage, and the driving voltage Vss may be a low-level voltage, so that the light-emitting current Cem may be generated and passed through the light-emitting unit 110 to enable the light-emitting unit 110 to emit light, but the present disclosure is not limited thereto.

[0130] Figure 5 The figure illustrates a top view of a layout of a transistor according to some embodiments. Figure 5In the embodiment, the transistor 10 may include a plurality of sub-transistors 12 electrically connected in parallel, and the transistor 10 may be used as an implementation design of one or more transistors in any one of the embodiments described in the driving circuit 100A and the present disclosure. The semiconductor material of the transistor 10 may include a semiconductor layer SCL made of single crystal silicon, polycrystalline silicon, amorphous silicon, an oxide semiconductor material or an organic semiconductor material, but the present disclosure is not limited thereto. In some embodiments, different transistors may include semiconductor layers made of different semiconductor materials, but the present disclosure is not limited thereto. Each sub-transistor 12 includes a gate electrode GE, a source electrode SE and a drain electrode DE overlapping the semiconductor layer SCL, and the gate electrode GE is shown to be located between the source electrode SE and the drain electrode DE in the top view. The gate electrode GE of the sub-transistor 12 may be connected to a common gate line CGL, the source electrode SE of the sub-transistor 12 may be connected to a common source line CSL, and the drain electrode DE of the sub-transistor 12 may be connected to a common drain line CDL, so that the sub-transistors 12 are connected in parallel. In addition, adjacent sub-transistors 12 may share a source electrode SE and / or a drain electrode DE, so that the design of the transistor 10 can be more compact.

[0131] Figure 6 The diagram illustrates a cross section of a sub-transistor according to some embodiments. Figure 6 In the sub-transistor 12, the gate electrode GE may be disposed above the semiconductor layer SCL with an insulating layer IL therebetween, so that the gate electrode GE may not directly contact the semiconductor layer SCL. The drain electrode DE and the source electrode SE are disposed on the semiconductor layer SCL and directly contact the semiconductor layer SCL. The region where the gate electrode GE overlaps the semiconductor layer SCL may be regarded as a channel region CH, and the source electrode SE and the drain electrode DE are respectively located at two opposite sides of the channel region CH. The characteristics of the transistor 10 may be determined by the channel region CH of the sub-transistor 12.

[0132] Figure 7 The diagram illustrates a cross-sectional view of the arrangement of a single sub-transistor 12. Figures 5 to 7 , the sub-channel length CHL and the sub-channel width CHW of the channel region CH of each sub-transistor 12, the sub-channel length CHL is the length measured in the direction from the source terminal SE across the gate terminal GE to the drain terminal DE, and the sub-channel width CHW is the width measured in the direction intersecting the sub-channel length CHL. In the present disclosure, the ratio of the sub-channel width CHW to the sub-channel length CHL (i.e., CHW / CHL) can represent the size of the sub-transistor 12, and the size of the transistor 10 can be known from the sum of the sizes of the sub-transistors 12.

[0133] In some embodiments, in order to implement the design in the previous embodiment in which the size of the driving transistor 120 is larger than the size of the compensation transistor 130, the driving transistor 120 may have a structure similar to the transistor 10 and the compensation transistor 130 may have a structure similar to a sub-transistor 12. For example, the compensation transistor 130 may be composed of one sub-transistor 12, and the driving transistor 120 may be composed of a plurality of sub-transistors 12 connected in parallel. The size of the sub-transistor 12 used to constitute the driving transistor 120 may be substantially the same as the size of the sub-transistor 12 used to constitute the compensation transistor 130, so that the threshold voltage of the driving transistor 120 is substantially the same as the threshold voltage of the compensation transistor 130. In some embodiments, the design of the driving circuit 100A may place the compensation transistor 130 near or next to the driving transistor 120. In some embodiments, the driving transistor 120 and the compensation transistor 130 may be as close as possible in the applied device to improve uniformity. It should be noted that Figures 5 to 7 The appearances of the driving transistor 120 and the compensation transistor 130 are only examples, and the present disclosure is not limited thereto.

[0134] Figure 8 The diagram illustrates a driving circuit for driving a light emitting unit according to some embodiments. Figure 8 In, similar Figure 1 The driving circuit 100A shown in the figure, the driving circuit 100B for driving the light-emitting unit 110 includes a driving transistor 120, a compensation transistor 130, a switch transistor 140, a reset transistor 150 and a first light-emitting transistor 160, and the difference is that the driving circuit 100B also includes a selection unit 170, wherein the electrical connection mode of the driving transistor 120, the compensation transistor 130, the switch transistor 140, the reset transistor 150 and the first light-emitting transistor 160 can refer to the previous description, and will not be repeated here. The selection unit 170 can be electrically connected to the source terminal 120S of the driving transistor 120, and selects one of the driving voltage Vdd and the reference voltage Vref to be electrically connected to the source terminal 120S of the driving transistor 120.

[0135] In an embodiment, the selection unit 170 may include a selection light emitting transistor 172, a selection reset transistor 174, and a selection switch transistor 176. The selection light emitting transistor 172 may include a gate terminal 172G electrically connected to the light emitting signal EM, a source terminal 172S electrically connected to the driving voltage Vdd, and a drain terminal 172D electrically connected to the source terminal 120S of the driving transistor 120. The selection reset transistor 174 may include a gate terminal 174G electrically connected to the reset signal RST, a source terminal 174S electrically connected to the reference voltage Vref, and a drain terminal 174D electrically connected to the drain terminal 172D of the selection light emitting transistor 172. The selection switch transistor 176 may include a gate terminal 176G electrically connected to the scan signal SCN, a source terminal 176S electrically connected to the reference voltage Vref, and a drain terminal 176D electrically connected to the drain terminal 174D of the selection reset transistor 174. Specifically, the drain terminal 174D of the selection reset transistor 174 and the drain terminal 176D of the selection switch transistor 176 may be electrically connected to each other at , and the node C is electrically connected to the drain terminal 172D of the selection light emitting transistor 172 through the node D. The drain terminal 172D of the selection light emitting transistor 172 is electrically connected to the source terminal 120S of the driving transistor 120. Therefore, the node C and the node D may be represented as the drain terminal 172D of the selection light emitting transistor 172, the drain terminal 174D of the selection reset transistor 174, and the drain terminal 176D of the selection switch transistor 176 are electrically connected to the source terminal 120S of the driving transistor 120. In some embodiments, the node C and the node D may be combined, but the present disclosure is not limited thereto. In addition, the source terminal 174S of the selection reset transistor 174 may be electrically connected to the source terminal 176S of the selection switch transistor 176 at the node E, and the node E may be electrically connected to the reference voltage Vref.

[0136] The operation of the driving circuit 100B may include a reset phase, a scanning phase, and a light emitting phase. In the reset phase, the reset transistor 150 is turned on, at which time the switch transistor 140 and the first light emitting transistor 160 may be turned off, and in the selection unit 170, the reset transistor 174 is selected to be turned on while the light emitting transistor 172 and the switch transistor 176 are selected to be turned off. In this way, the reset voltage Vrst is provided to the node A through the reset transistor 150, and the reference voltage Vref is provided to the node C and the node D through the reset transistor 174, so that the reference voltage Vref can be provided to the source terminal 120S of the driving transistor 120, and the reset voltage Vrst can be provided to the gate terminal 120G of the driving transistor 120.

[0137] In the scanning phase, the reset transistor 150 is turned off and the switch transistor 140 is turned on, and the first light emitting transistor 160 remains turned off. In the selection unit 170, the light emitting transistor 172 is selected to remain turned off, while the reset transistor 174 is selected to be turned off and the switch transistor 176 is selected to be turned on. During the scanning phase, as described above, the data voltage DT on the data line DL is allowed to be transmitted to the source terminal 130S of the compensation transistor 130, and the compensation data voltage CDV can be provided to the node A by the diode connection configuration of the compensation transistor 130. In addition, the operation of the selection unit 170 allows the reference voltage Vref to be provided to the source terminal 120S of the driving transistor 120. Accordingly, during the reset phase and the scanning phase, the voltage of the source terminal 120S of the driving transistor 120 is maintained at the reference voltage Vref. Because the reference voltage Vref replaces the driving voltage Vdd, the effect of the voltage fluctuation on the source terminal 120S of the driving transistor 120 is small due to the effect of the parasitic capacitor Cpar, so that the compensation data voltage CDV at the node A can be maintained.

[0138] In the light emitting stage, while the reset transistor 150 remains turned off, the switch transistor 140 can be turned off and the first light emitting transistor 160 can be turned on, and while the selected reset transistor 174 remains turned off, the selected switch transistor 176 is turned off and the selected light emitting transistor 172 is turned on. And by turning on the selected light emitting transistor 172, the driving voltage Vdd is allowed to be provided to the source terminal 120S of the driving transistor 120. In the start light emitting stage, the voltage on the source terminal 120S of the driving transistor 120 is converted from the reference voltage Vref to the driving voltage Vdd. This voltage change on the driving transistor 120 may cause the gate-source voltage to shift, but due to the presence of the parasitic capacitor Cpar, the gate-source voltage of the driving transistor 120 can be maintained within a certain range. Accordingly, in the light-emitting stage, because the capacitive coupling of the parasitic capacitor Cpar is used to maintain the gate-source voltage of the driving transistor 120, the influence of the voltage offset on the source terminal 120S of the driving transistor 120 is relatively small, and the conduction state of the driving transistor 120 and the light-emitting current Cem through the light-emitting unit 110 can both remain stable.

[0139] In some embodiments, the reference voltage Vref and the driving voltage Vdd can be substantially the same voltage value. For example, the reference voltage Vref and the driving voltage Vdd can be transmitted by the same voltage value by independent paths. The reference voltage Vref is provided during the reset phase and the scan phase, but not during the light-emitting phase, and the transmission path of the reference voltage Vref may not pass through the light-emitting unit 110 in the driving circuit 100B, which is a relatively high-resistance component in the driving circuit 100B. Accordingly, the reference voltage Vref can drop too much voltage without being affected by the resistance. In other words, since the high-resistance component can be expected to have a smaller current, the fluctuation of the voltage value of the reference voltage Vref can be very small or negligible. Therefore, the reference voltage Vref provided to the node D and the source terminal 120S of the driving transistor 120 can be substantially the same as the predetermined value, which helps to ensure that the gate-source voltage of the driving transistor 120 can be maintained during the reset phase and the scan phase. Figure 8 The selection unit 170 shown is an example, and the present disclosure is not limited thereto. In some other embodiments, the selection unit 170 may include more or fewer transistors, and may further include other circuit components or alternative circuit designs, which may be applied to the driving circuit 100B and can selectively connect the reference voltage Vref and the driving voltage Vdd to the source terminal 120S of the driving transistor 120, which also belongs to the scope of the present disclosure.

[0140] Fig. 9 The diagram illustrates a driving circuit for driving a light emitting unit according to some embodiments. Fig. 9 The driving circuit 100C for driving the light emitting unit 110 is similar to Figure 1The driving circuit 100A shown in the figure, the driving circuit 100C includes a driving transistor 120, a compensation transistor 130, a switch transistor 140, a reset transistor 150 and a first light-emitting transistor 160, and the difference is that the driving circuit 100C further includes a control unit 180 and a storage capacitor 190, wherein the electrical connection method of the driving transistor 120, the compensation transistor 130, the switch transistor 140, the reset transistor 150 and the first light-emitting transistor 160 can refer to the previous description and will not be repeated here. The control unit 180 may include a first control transistor 182 and a second control transistor 184, wherein the first control transistor 182 includes a drain terminal 182D electrically connected to the drain terminal 130D of the compensation transistor 130 at the node F, a source terminal 182S electrically connected to the gate terminal 130G of the compensation transistor 130 at the node G, and a gate terminal 182G. The second control transistor 184 includes a drain terminal 184D electrically connected to the source terminal 182S of the first control transistor 182 at a node G, a source terminal 184S electrically connected to the gate terminal 182G of the first control transistor 182 at a node H, and a gate terminal 184G electrically connected to the drain terminal 184D of the second control transistor 184 at a node I. The storage capacitor 190 is electrically connected between a node K and a node J, wherein the node K is electrically connected to the gate terminal 120G of the driving transistor 120, and the node J is electrically connected to the source terminal 120S of the driving transistor 120. In an embodiment, the gate terminal 182G of the first control transistor 182 and the source terminal 184S of the second control transistor 184 may be electrically connected to the scan signal SCN, like the gate terminal 140G of the switch transistor 140, and therefore, the gate terminal 182G of the first control transistor 182 and the source terminal 184S of the second control transistor 184 may be electrically connected to the gate terminal 140G of the switch transistor 140.

[0141] like Fig. 9 As shown, the control unit 180 is electrically connected between the gate terminal 130G and the drain terminal 130D of the compensation transistor 130. The control unit 180 can be used to control the operation of the compensation transistor 130. For example, the first control transistor 182 can determine whether the gate terminal 130G of the compensation transistor 130 is electrically connected to the drain terminal 130D of the compensation transistor 130, which will make the compensation transistor 130 have a diode connection configuration. In addition, in the control unit 180, the gate terminal 184G and the drain terminal 184D of the second control transistor 184 can be electrically connected to each other, which makes the second control transistor 184 have a diode connection configuration, which can help ensure the cut-off state of the compensation transistor 130.

[0142] Similar to the previous embodiment, the operation phase of the driving circuit 100C may also include a reset phase, a scan phase, and a light emitting phase. In the reset phase, the reset transistor 150 electrically connected to the gate terminal 120G of the driving transistor 120 may be turned on to transmit the reset voltage Vrst to the node L, while the switch transistor 140, the first light emitting transistor 160, and the first control transistor 12 are turned off. In this embodiment, the node F and the node K are electrically connected to the node L, so the reset voltage Vrst may also be transmitted to the drain terminal 130D of the compensation transistor 130 and the gate terminal 120G of the driving transistor 120. In addition, the reset voltage Vrst may be stored at the nodes F, K, and L through the storage capacitor 190 and the parasitic capacitor Cpar formed between the gate terminal 120G and the source terminal 120S of the driving transistor 120.

[0143] In the scanning phase, while the first light emitting transistor 160 remains turned off, the reset transistor 150 is turned off and the switch transistor 140 is turned on. The first control transistor 182 is turned on by the same scanning signal SCN as the switch transistor 140. The data voltage DT on the transmission line DL is allowed to be transmitted to the source terminal 130S of the compensation transistor 130 through the switch transistor 140. The turned-on first control transistor 182 electrically connects the gate terminal 130G and the drain terminal 130D of the compensation transistor 130, which enables the compensation transistor 130 to have a diode connection configuration. Accordingly, similar to the above-mentioned embodiment, the compensation data voltage CDV can be provided to the drain terminal 130D of the compensation transistor 130, the node F, the node K, the node L and the gate terminal 120G of the driving transistor 120. The compensation data voltage CDV can be the result of the voltage value of the data voltage DT minus the absolute value of the threshold voltage value of the compensation transistor 130, and enables the driving transistor 120 to be turned on. The compensation data voltage CDV can be stored at the drain terminal 130D of the compensation transistor 130, the node F, the node K, the node L, and the gate terminal 120G of the driving transistor 120 through the storage capacitor 190 and the parasitic capacitor Cpar connected between the gate terminal 120G and the source terminal 120S of the driving transistor 120. In addition, during the scan stage, the compensation data voltage CDV can also be provided to the node G and the node I.

[0144] In the light-emitting phase, when the reset transistor 150 remains turned off, the switch transistor 140 and the first control transistor 182 are turned off and the first light-emitting transistor 160 is turned on. In addition, the compensation data voltage CDV stored by the storage capacitor 190 and the parasitic capacitor Cpar allows the driving transistor 120 to remain turned on. Specifically, the parasitic capacitor Cpar and the storage capacitor 190 can maintain the gate-source voltage of the driving transistor 120 input in the scanning phase, so that the driving voltage Vdd can be allowed to be transmitted from the driving transistor 120 and the first light-emitting transistor 160 to one end of the light-emitting unit 110, and the other end of the light-emitting unit 110 is electrically connected to another driving voltage Vss, which enables the light-emitting unit 110 to emit light.

[0145] In the light emitting stage, the control unit 180 helps to maintain the compensation data voltage CDV stored at the gate terminal 120G of the driving transistor 120 to reduce leakage. Specifically, the second control transistor 184 in the control unit 180 has a diode connection configuration, and allows current to flow from the source terminal 184S to the drain terminal 184D in a single direction, which means that the gate terminal 130G of the compensation transistor 130 is biased to turn off the compensation transistor 130. Therefore, there is almost no leakage current between the parasitic capacitor Cpar and / or the storage capacitor 190 and the data line DL. In some embodiments, the storage capacitor 190 in the driving circuit 100C can be omitted, and the parasitic capacitor Cpar is used to achieve the purpose of maintaining the voltage. In some alternative embodiments, the storage capacitor 190 can be applied to the driving circuit 100A or the driving circuit 100B.

[0146] Fig.10 The figure illustrates a driving circuit for driving a light emitting unit according to some embodiments. Fig.10 As shown, the driving circuit 200A for driving the light emitting unit 110 is similar to Figure 1The driving circuit 100A shown in the figure, the driving circuit 200A includes a driving transistor 120, a compensation transistor 130, a switch transistor 140, a reset transistor 150 and a first light emitting transistor 160, and the difference is that the driving circuit 200A further includes a second light emitting transistor 210, a third light emitting transistor 220 and another switch transistor 230. In the embodiment, the connection method of the light emitting unit 110, the driving transistor 120, the compensation transistor 130, the switch transistor 140, the reset transistor 150 and the first light emitting transistor 160 can refer to the previous embodiment and will not be repeated here. The second light emitting transistor 210 may include a gate terminal 210G electrically connected to the light emitting signal EM, a source terminal 210S electrically connected to the drain terminal 130D of the compensation transistor 130 at the node M, and a drain terminal 210D electrically connected to the drain terminal 160D of the first light emitting transistor 160 at the node N. The third light emitting transistor 220 includes a gate terminal 220G electrically connected to the light emitting signal EM, a source terminal 220S electrically connected to the driving voltage Vdd, and a drain terminal 220D electrically connected to the source terminal 130S of the compensation transistor 130 at the node O. The switch transistor 230 includes a gate terminal 230G electrically connected to the scan signal SCN, a source terminal 230S electrically connected to the drain terminal 130D of the compensation transistor 130 at the node M, and a drain terminal 230D electrically connected to the gate terminal 130G of the compensation transistor 130 at the node P and the node Q. In an embodiment, the source terminal 150S of the reset transistor 150 may be electrically connected to the drain terminal 230D of the switch transistor 230 at the node P, and the node Q is electrically connected to the node P, wherein the node Q represents that the gate terminal 120G of the driving transistor 120, the gate terminal 130G of the compensation transistor 130, and the source terminal 150S of the reset transistor 150 are electrically connected. In an embodiment, the driving circuit 200A may have eight transistors, but the disclosure is not limited thereto. In some other embodiments, the driving circuit 200A may have more transistors.

[0147] The operation phases of the driving circuit 200A may include a reset phase, a scanning phase, and a light emitting phase. Similar to the previous embodiment, in the reset phase, the switch transistor 140, the switch transistor 230, the first light emitting transistor 160, the second light emitting transistor 210, and the third light emitting transistor 220 may be turned off and the reset transistor 150 may be turned on. Accordingly, the reset voltage Vrst may be provided to the node P and the node Q through the reset transistor 150. The reset voltage Vrst may be stored at the gate terminal 120G of the driving transistor 120 by the parasitic capacitance Cpar between the gate terminal 120G and the source terminal 120S of the driving transistor 120.

[0148] In the scanning phase, when the first light emitting transistor 160, the second light emitting transistor 210 and the third light emitting transistor 220 remain turned off, the reset transistor 150 is turned off and the switch transistor 140 and the switch transistor 230 are turned on. The data voltage DT on the data line DL is allowed to be transmitted to the node O by the turned-on switch transistor 140, and the turned-on switch transistor 230 can make the node M connected to the node P and the node Q, so that the compensation transistor 130 forms a diode connection configuration. The compensation transistor 130 therefore allows the compensation data voltage CDV to be provided to the node Q, and stores the compensation data voltage CDV at the gate terminal 120G of the driving transistor 120 by the action of the parasitic capacitor Cpar. The compensation data voltage CDV can be the result of the voltage value of the data voltage DT minus the absolute value of the threshold voltage of the compensation transistor 130, and enables the driving transistor 120 to be turned on. As described in the previous embodiment, the size of the driving transistor 120 is larger than the size of the compensation transistor 130, and the driving transistor 120 and the compensation transistor 130 can have substantially the same threshold voltage. The presence of the compensation data voltage CDV is ideal for the driving transistor 120 driving the light emitting unit 110 to emit light. For example, the compensation data voltage CDV may enable the driving transistor 120 to be turned on.

[0149] In the light emitting stage, when the reset transistor 150 remains turned off, the first light emitting transistor 160, the second light emitting transistor 210 and the third light emitting transistor 220 are turned on and the switch transistor 140 and the switch transistor 230 are turned off. At this time, the compensation transistor 130 does not involve a diode connection configuration because the switch transistor 230 is turned off in the light emitting stage and the compensation transistor 130 is in a conductive state by the compensation data voltage CDV stored at the gate terminal 130G. Since the second light emitting transistor 210, the third light emitting transistor 220 and the compensation transistor 130 are turned on, the driving voltage Vdd on the source terminal 220S of the third light emitting transistor 220 is allowed to be provided to the node N. In addition, the turning on of the first light emitting transistor 160 and the driving transistor 120 allows the driving voltage Vdd on the source terminal 120S of the driving transistor 120 to be transmitted to the node N. One end of the light emitting unit 110 is electrically connected to a node N to which a driving voltage Vdd is provided, and the other end is electrically connected to another driving voltage Vss, so that a light emitting current Cem flows through the light emitting unit 110 to drive the light emitting unit 110 to emit light.

[0150] Fig.11 The figure illustrates a driving circuit for driving a light emitting unit according to some embodiments. Fig.11As shown, the driving circuit 200B for driving the light-emitting unit 110 is similar to the driving circuit 200A, and includes a driving transistor 120, a compensation transistor 130, a switch transistor 140, a reset transistor 150, a first light-emitting transistor 160, a second light-emitting transistor 210, a third light-emitting transistor 220 and another switch transistor 230. The electrical connection between the light-emitting unit 110 and the eight transistors can refer to the previous description, which will not be repeated here. In addition, the driving circuit 200B can further include a selection unit 170, which is substantially the same as Figure 8 The selection unit 170 described. Specifically, the selection unit 170 may include a selection light emitting transistor 172, a selection reset transistor 174, and a selection switch transistor 176 to allow the reference voltage Vref and the driving voltage Vdd to be selectively provided to the source terminal 120S of the driving transistor 120. The electrical connection and operation of the selection light emitting transistor 172, the selection reset transistor 174, and the selection switch transistor 176 can be referred to. Figure 8 For example, in the reset phase, when the selection switch transistor 176 and the selection light emitting transistor 172 are turned off, the selection reset transistor 174 is turned on, so that the reference voltage Vref is provided to the source terminal 120S of the driving transistor 120. In the scanning phase, when the selection light emitting transistor 172 remains turned off, the selection switch transistor 176 is turned on and the selection reset transistor 174 is turned off, so that the reference voltage Vref is still provided to the source terminal 120S of the driving transistor 120. In the light emitting phase, when the selection reset transistor 174 remains turned off, the selection light emitting transistor 172 is turned on and the selection switch transistor 176 is turned off, so that the driving voltage Vdd is allowed to be provided to the source terminal 120S of the driving transistor 120.

[0151] As in Figure 8 As described in the embodiment of , the reference voltage Vref and the driving voltage Vdd can be substantially the same voltage value. The reference voltage Vref is transmitted in the reset phase and the scan phase, and the light emitting unit 110 having a larger resistance than other components is not on the transmission path of the reference voltage Vref. Due to the high resistance of the component, the reference voltage Vref is expected to become relatively small, and the phenomenon that the voltage drop of the reference voltage Vref caused by the resistance will be small or negligible, so as to ensure that the gate-source voltage of the driving transistor 120 can be kept stable during the light emitting phase.

[0152] Fig.12 The figure illustrates a driving circuit for driving a light emitting unit according to some embodiments. Fig.12As shown, the driving circuit 200C for driving the light-emitting unit 110 is similar to the driving circuit 200A, and includes a driving transistor 120, a compensation transistor 130, a switch transistor 140, a reset transistor 150, a first light-emitting transistor 160, a second light-emitting transistor 210, a third light-emitting transistor 220 and another switch transistor 230. The electrical connection between the light-emitting unit 110 and the eight transistors can be referred to the previous description and will not be repeated here. In addition, the driving circuit 200C can further include a storage capacitor 190, which is substantially the same as Fig. 9 The storage capacitor 190 electrically connected between the gate terminal 120G and the source terminal 120S of the driving transistor 120 and the parasitic capacitor Cpar electrically connected between the gate terminal 120G and the source terminal 120S of the driving transistor 120 have the same effect. For example, both the storage capacitor 190 and the parasitic capacitor Cpar help maintain the gate-source voltage of the driving transistor 120 stable.

[0153] In some embodiments, the driving transistor 120 and the compensating transistor 130 in the driving circuit 100A, the driving circuit 100B, the driving circuit 100C, the driving circuit 200A, the driving circuit 200B and the driving circuit 200C may substantially have the same threshold voltage, but the size of the driving transistor 120 is larger than the size of the compensating transistor 130, wherein the description of the transistor size can refer to Figures 5 to 7 In addition, the transistors mentioned in the above embodiments are all P-type transistors, but the present disclosure is not limited thereto.

[0154] Fig.13 The figure illustrates a driving circuit for driving a light emitting unit according to some embodiments. Fig.13 In the embodiment, the driving circuit 300A for driving the light-emitting unit 310 may include a driving transistor 320, a compensation transistor 330, a first switch transistor 342, a second switch transistor 344, a first reset transistor 352, a second reset transistor 354, a first light-emitting transistor 362, a second light-emitting transistor 364, a first control transistor 372, a second control transistor 374 and a storage capacitor 380. Specifically, the transistors in the driving circuit 300A are all N-type transistors. Similar to the above embodiment, the size of the driving transistor 320 is larger than the size of the compensation transistor 330, and the driving transistor 320 and the compensation transistor 330 can substantially have the same threshold voltage. Therefore, the parasitic capacitance Cpar of the gate terminal and the source terminal of the driving transistor 320 can help maintain the gate-source voltage of the driving transistor 320.

[0155] In an embodiment, the gate terminal of the driving transistor 320 is electrically connected to the storage capacitor 380, and the driving transistor 320 is electrically connected between the first light emitting transistor 362 and the second light emitting transistor 364, and the first light emitting transistor 362 is electrically connected between the driving transistor 320 and the light emitting unit 310. One end of the light emitting unit 310 is electrically connected to the driving voltage Vdd, and one end of the second light emitting transistor 364 is electrically connected to another driving voltage Vss. The first switch transistor 342 is electrically connected between the data line DL and the compensation transistor 330. The gate terminal of the compensation transistor 330 is electrically connected to the gate terminal of the driving transistor 320 through the second control transistor 374. The first control transistor 372 having a diode connection configuration is electrically connected between the gate terminal of the compensation transistor 330 and the gate terminal of the second control transistor 374. The first reset transistor 352 is electrically connected to the reset voltage Vrst and the gate terminal 320G of the driving transistor 320. The second reset transistor 354 is electrically connected to the reference voltage Vref and the source terminal 320S of the driving transistor 320. The second switch transistor 344 is electrically connected between the source terminal and the drain terminal of the second reset transistor 354. The storage capacitor 380 is electrically connected between the gate terminal 320G and the source terminal 320S of the driving transistor 320.

[0156] Fig.14 The figure illustrates a driving circuit for driving a light emitting unit according to some embodiments. Fig.14 The driving circuit 300B for driving the light-emitting unit 310 is similar to the driving circuit 300A, and the driving circuit 300B includes a driving transistor 320, a compensation transistor 330, a first switch transistor 342, a second switch transistor 344, a first reset transistor 352, a second reset transistor 354, a first light-emitting transistor 362, a second light-emitting transistor 364 and a storage capacitor 380. The difference from the driving circuit 300A is that the driving circuit 300B may not include the first control transistor 372 and the second control transistor 374, and the driving circuit 300B further includes a third switch transistor 346, a third light-emitting transistor 366 and a fourth light-emitting transistor 368. Specifically, the transistors of the driving circuit 300B are all N-type transistors.

[0157] The electrical connection method of the light emitting unit 310, the driving transistor 320, the compensation transistor 330, the first switch transistor 342, the second switch transistor 344, the first reset transistor 352, the second reset transistor 354, the first light emitting transistor 362, the second light emitting transistor 364 and the storage capacitor 380 can refer to Fig.13 The description of the embodiments will not be repeated here.

[0158] In an embodiment, the third switch transistor 346 is electrically connected between the gate terminal 330G and the drain terminal 330D of the compensation transistor 330. The third light emitting transistor 366 is electrically connected between the drain terminal 330D of the compensation transistor 330 and the light emitting unit 310. The fourth light emitting transistor 368 is electrically connected to the driving voltage Vss and electrically connected to the source terminal 330S of the compensation transistor 330. The operation of the third switch transistor 346 can determine whether the compensation transistor 330 is a diode electrical connection configuration or a transistor electrical connection configuration. For example, when the third switch transistor 346 is turned off, the compensation transistor 330 can be used as a driving transistor.

[0159] In summary, the driving circuit according to some embodiments of the present disclosure includes a compensation transistor and a driving transistor that have essentially the same threshold voltage. The data voltage provided to the gate terminal of the driving transistor is compensated by the compensation transistor. The compensated data voltage is maintained and stored by the parasitic capacitance of the driving transistor, so that the light-emitting performance of the light-emitting unit driven by the driving circuit disclosed in some embodiments can be satisfactory and stable. In other words, the driving circuit according to some embodiments of the present disclosure can achieve an improved light-emitting effect of the light-emitting unit.

[0160] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A driving circuit for driving a light-emitting unit, characterized in that: The driving circuit comprises: A driving transistor including a gate terminal, a source terminal and a drain terminal; a compensation transistor including a gate terminal electrically connected to the gate terminal of the driving transistor, a source terminal, and a drain terminal electrically connected to the gate terminal of the driving transistor; a switch transistor including a gate terminal, a source terminal, and a drain terminal connected to the source terminal of the compensation transistor; A first light emitting transistor, electrically connected to the drain terminal of the driving transistor; a second light emitting transistor, comprising a gate terminal, a source terminal electrically connected to the drain terminal of the compensation transistor, and a drain terminal electrically connected to the drain terminal of the first light emitting transistor; and The third light emitting transistor includes a gate terminal, a source terminal electrically connected to the driving voltage, and a drain terminal electrically connected to the source terminal of the compensation transistor.

2. The driving circuit according to claim 1, characterized in that: The driving transistor includes a plurality of sub-transistors connected in parallel, wherein the plurality of sub-transistors have the same channel size, and at least one of the plurality of sub-transistors has the same channel size as the compensation transistor.

3. The driving circuit according to claim 1, characterized in that: Also includes: A reset transistor is electrically connected to the gate terminal of the driving transistor.

4. The driving circuit according to claim 1, characterized in that: Also includes: A selection unit, for selecting one of a driving voltage and a reference voltage to be electrically connected to the source terminal of the driving transistor, wherein the selection unit comprises: Selecting a light emitting transistor, including a gate terminal, a source terminal electrically connected to the driving voltage, and a drain terminal electrically connected to the source terminal of the driving transistor; A selection reset transistor includes a gate terminal, a source terminal electrically connected to the reference voltage, and a drain terminal electrically connected to the drain terminal of the selection light emitting transistor; as well as The selection switch transistor includes a gate terminal, a source terminal electrically connected to the reference voltage, and a drain terminal electrically connected to the drain terminal of the selection reset transistor, wherein the reference voltage and the driving voltage have the same voltage value.

5. The driving circuit according to claim 1, characterized in that: Also includes: A storage capacitor is connected between the gate terminal of the driving transistor and the source terminal of the driving transistor.

6. The driving circuit according to claim 3, characterized in that: Also includes: another switch transistor, comprising a gate terminal, a source terminal electrically connected to the drain terminal of the compensation transistor, and a drain terminal electrically connected to the gate terminal of the compensation transistor; a storage capacitor connected between the gate terminal of the driving transistor and the source terminal of the driving transistor; as well as a selection unit, configured to electrically connect one of the driving voltage and a reference voltage to the source terminal of the driving transistor; Wherein the selection unit comprises: Selecting a light emitting transistor, including a gate terminal, a source terminal electrically connected to the driving voltage, and a drain terminal electrically connected to the source terminal of the driving transistor; A select reset transistor includes a gate terminal, a source terminal electrically connected to the reference voltage, and a drain terminal electrically connected to the select node; as well as The selection switch transistor includes a gate terminal, a source terminal electrically connected to the reference voltage, and a drain terminal electrically connected to the source terminal of the driving transistor, wherein the reference voltage and the driving voltage have the same voltage value.

7. The driving circuit according to claim 1, characterized in that: The driving transistor, the compensation transistor and the switch transistor are transistors of the same conductivity type.

8. The driving circuit according to claim 1, characterized in that: A data line is also included, wherein the source terminal of the switch transistor is electrically connected to the data line. 9 . The driving circuit according to claim 1 , wherein the light emitting unit comprises a light emitting diode. 10 . The driving circuit according to claim 1 , wherein a threshold voltage value of the driving transistor and a threshold voltage value of the compensation transistor are the same.

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