Display device and tiled display device comprising the same

Abstract

A display device and a tile-type display device including the same are provided. The display device includes a substrate including a plurality of light emitting areas and a plurality of light blocking areas each surrounding the plurality of light emitting areas; a thin film transistor layer including a thin film transistor disposed on the substrate and a connection wiring connected to the thin film transistor; a light emitting element layer disposed on the thin film transistor layer and including a plurality of light emitting elements each corresponding to the plurality of light emitting areas; an encapsulation layer covering the light emitting element layer; and a pad disposed on the encapsulation layer and contacting the connection wiring through a contact hole disposed in the encapsulation layer.

Description

Technical Field

[0001] The present invention relates to a display device and a tile-type display device including the display device. Background Technology

[0002] With the development of the information society, the demand for display devices for displaying images is increasing in various forms. For example, display devices are being used in a variety of electronic devices such as smartphones, digital cameras, laptops, navigation devices, and smart TVs. Display devices can be flat panel displays such as Liquid Crystal Display Devices (LCDs), Field Emission Display Devices (FEP Displays), and Organic Light Emitting Display Devices (OLEDs). In these flat panel displays, the light-emitting display element can include a self-emissive element where each pixel of the display panel emits light, thus allowing images to be displayed without a backlight unit that supplies light to the display panel.

[0003] In manufacturing display devices with large screen sizes, the increased pixel count can lead to higher defect rates in the light-emitting elements, potentially reducing productivity and reliability. To address this issue, tile-type display devices can achieve large-screen displays by connecting multiple relatively small display devices. Due to the non-display areas or border areas of each of the adjacent display devices, tile-type display devices may include multiple sections called seams, which are the boundary portions between the multiple display devices. When displaying an image across the entire screen, these boundary portions between the multiple display devices can create a sense of separation, reducing the immersive experience of the image. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a tile-type display device that can eliminate the sense of separation between multiple display devices and improve the immersive experience of images by preventing the boundary portions or non-display areas between multiple display devices from being identifiable.

[0005] The technical problems of this invention are not limited to those mentioned above, and other technical problems not mentioned can be clearly understood by those skilled in the art through the following description.

[0006] A display device according to an embodiment for solving the aforementioned technical problem includes: a substrate including a plurality of light-emitting regions and a plurality of light-shielding regions, the plurality of light-shielding regions respectively surrounding the plurality of light-emitting regions; a thin-film transistor layer including thin-film transistors and interconnecting wirings, the thin-film transistors being disposed on the substrate and the interconnecting wirings being connected to the thin-film transistors; a light-emitting element layer disposed on the thin-film transistor layer and including a plurality of light-emitting elements corresponding to the plurality of light-emitting regions respectively; an encapsulation layer covering the light-emitting element layer; and a pad disposed on the encapsulation layer and contacting the interconnecting wirings through contact holes disposed on the encapsulation layer.

[0007] The thin-film transistor layer may further include: a connecting electrode, disposed on the thin-film transistor to connect the first electrode of the thin-film transistor and the light-emitting element, wherein the connecting wiring and the connecting electrode may be disposed on the same layer.

[0008] The connection wiring can be arranged on the same layer as the gate electrode of the thin-film transistor.

[0009] The pad or the connecting wiring may overlap with the plurality of light-shielding areas.

[0010] The display device may further include a metal layer disposed on the encapsulation layer and spaced apart from the pad portion.

[0011] The metal layer can be made of the same material as the pad.

[0012] The display device may further include: a protective film covering the metal layer; and a flexible film disposed on the pad and connected to the pad.

[0013] Each of the plurality of light-emitting elements may include: a first electrode disposed on the thin-film transistor layer and connected to the thin-film transistor; a second electrode disposed on the thin-film transistor layer spaced apart from the first electrode; and a light-emitting diode disposed between the first electrode and the second electrode, spaced apart from the first electrode and the second electrode.

[0014] The light-emitting element layer may further include: a first contact electrode covering one end of the light-emitting diode and the first electrode to connect the light-emitting diode and the first electrode; and a second contact electrode covering the other end of the light-emitting diode and the second electrode to connect the light-emitting diode and the second electrode.

[0015] The light-emitting element layer may further include: a protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode; and a reflective component covering the protective layer and reflecting the light emitted by the light-emitting diode toward the substrate, wherein the reflective components of each of the plurality of light-emitting regions may be spaced apart from each other.

[0016] The encapsulation layer may cover the upper and side surfaces of the reflective component as well as a portion of the thin-film transistor layer.

[0017] The light-emitting element layer may further include: a protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode; and a reflective component covering the protective layer and the thin-film transistor layer, and reflecting the light emitted by the light-emitting diode toward the substrate.

[0018] A tile-type display device according to an embodiment for solving the aforementioned technical problem includes: a plurality of display devices, each of the plurality of display devices including a display area and a non-display area, the display area being equipped with a plurality of pixels, and the non-display area surrounding the display area; and a bonding member for bonding the plurality of display devices, wherein each of the plurality of display devices includes: a substrate including a plurality of light-emitting areas as part of the display area, and a plurality of light-shielding areas surrounding the plurality of light-emitting areas as another part of the display area; a thin-film transistor layer including thin-film transistors and interconnect wiring, the thin-film transistors being disposed on the substrate, and the interconnect wiring being connected to the thin-film transistors; a light-emitting element layer disposed on the thin-film transistor layer and including a plurality of light-emitting elements corresponding to the plurality of light-emitting areas respectively; an encapsulation layer covering the light-emitting element layer; and a pad disposed on the encapsulation layer and contacting the interconnect wiring through contact holes disposed on the encapsulation layer.

[0019] The thin-film transistor layer may further include: a connection electrode, disposed on the thin-film transistor to connect the first electrode of the thin-film transistor and the light-emitting element, wherein the connection wiring may be disposed on the same layer as the connection electrode.

[0020] The connection wiring can be arranged on the same layer as the gate electrode of the thin-film transistor.

[0021] The pad or the connecting wiring may overlap with the non-display area or the multiple light-shielding areas.

[0022] Each of the plurality of display devices may further include a metal layer disposed on the encapsulation layer and spaced apart from the pad portion.

[0023] Each of the plurality of display devices may further include: a protective film covering the metal layer; and a flexible film disposed on the pad and connected to the pad.

[0024] Each of the plurality of light-emitting elements may include a first electrode, a second electrode, and a light-emitting diode, wherein the second electrode is spaced apart from the first electrode, and the light-emitting diode is arranged between the first electrode and the second electrode, spaced apart from the first electrode and the second electrode. The light-emitting element layer may further include a first contact electrode and a second contact electrode, wherein the first contact electrode connects the light-emitting diode and the first electrode, and the second contact electrode connects the light-emitting diode and the second electrode.

[0025] The light-emitting element layer may further include: a protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode; and a reflective component covering the protective layer and reflecting the light emitted by the light-emitting diode toward the substrate.

[0026] The details of other embodiments are included in the detailed description and accompanying drawings.

[0027] In the display device according to the embodiment and the tile-type display device including the display device, light emitted from the light-emitting element layer can be reflected by a reflective member, thereby being emitted towards the front of the display device through the substrate. A pad can be arranged on the edge of the display device on the encapsulation layer. Each of the plurality of display devices can minimize the area of ​​the non-display area of ​​the display device by including a pad arranged at the rear. Therefore, the tile-type display device can prevent the user from identifying the non-display area or boundary portion between the plurality of display devices by minimizing the spacing between the plurality of display devices.

[0028] The effects of the embodiments are not limited to those illustrated above, and more diverse effects are included in this specification. Attached Figure Description

[0029] Figure 1 This is a plan view showing a tile-type display device according to an embodiment.

[0030] Figure 2 This is a plan view showing a display device according to an embodiment.

[0031] Figure 3 It is along Figure 2 The cross-sectional view taken by the intercept line I-I'.

[0032] Figure 4 yes Figure 3 A magnified view of region A1.

[0033] Figure 5This is a diagram illustrating a light-emitting element according to one embodiment.

[0034] Figure 6 This is a plan view showing the combined structure of a tile-type display device according to an embodiment.

[0035] Figure 7 It is along Figure 6 A cross-sectional view of an example taken from section II-II'.

[0036] Figure 8 It is along Figure 6 A cross-sectional view of another example taken by section II-II'.

[0037] Figure 9 It is along Figure 6 Another example of a cross-section taken from the section line II-II'.

[0038] Figures 10 to 18 This is a cross-sectional view illustrating the manufacturing process of a display device according to an embodiment.

[0039] Explanation of reference numerals in the attached figures

[0040] TD: Tile-type display device

[0041] 10: Display device; 20: Connecting component

[0042] SUB: Substrate; CFL: Color filter layer

[0043] WLCL: Wavelength conversion layer; TFTL: Thin film transistor layer

[0044] EML: Light-emitting element layer; EL: Light-emitting element

[0045] CTE1: First contact electrode; CTE2: Second contact electrode

[0046] RM: Reflective component; TFE: Encapsulation layer

[0047] CWL: Connecting Wiring; PD: Pad.

[0048] ACT: Connecting Membrane 210: Flexible Membrane

[0049] 220: Source drive unit PF: Protective film Detailed Implementation

[0050] References and Appendix Figure 1The advantages and features of the invention, as well as the methods for achieving them, will become clear from the detailed embodiments described below. However, the invention can be implemented in many different forms and is not limited to the embodiments disclosed below. These embodiments are provided only to complete the disclosure of the invention and to fully inform those skilled in the art of the invention of its scope. The invention is defined only by the scope of the claims.

[0051] The reference to elements or layers being "on" other elements or layers includes situations where they are immediately above or adjacent to other elements, or where other layers or elements are sandwiched in between. Throughout this specification, the same reference numerals refer to the same constituent elements. The shapes, sizes, proportions, angles, quantities, etc., disclosed in the drawings used to illustrate embodiments are exemplary, and therefore the invention is not limited to the illustrated matters.

[0052] Although terms such as "first" and "second" are used to describe various constituent elements, these constituent elements are clearly not limited to these terms. These terms are only used to distinguish one constituent element from another. Therefore, the "first constituent element" mentioned below can obviously also be a "second constituent element" within the technical concept of this invention.

[0053] The various features of the multiple embodiments of the present invention can be partially or wholly combined or integrated with each other, and can be linked and driven in various ways in terms of technology. Each embodiment can be implemented independently of each other, or can be implemented together in a related relationship.

[0054] The specific embodiments will now be described with reference to the accompanying drawings.

[0055] Figure 1 This is a plan view showing a tile-type display device according to an embodiment.

[0056] Reference Figure 1 The tile-type display device TD may include multiple display devices 10. The multiple display devices 10 may be arranged in a grid pattern, but are not limited to this. The multiple display devices 10 may be connected along a first direction (X-axis direction) or a second direction (Y-axis direction), and the tile-type display device TD may have a specific shape. For example, the multiple display devices 10 may each have the same size as each other, but are not limited to this. As another example, the multiple display devices 10 may have different sizes than each other.

[0057] Each of the plurality of display devices 10 may be rectangular in shape, including a long side and a short side. The plurality of display devices 10 may be arranged such that their long or short sides are connected to each other. Some of the display devices 10 may be arranged along the edge of the tile-type display device TD, thus forming one side of the tile-type display device TD. Other display devices 10 may be arranged at the corners of the tile-type display device TD, and may form two adjacent sides of the tile-type display device TD. Still other display devices 10 may be arranged inside the tile-type display device TD and may be surrounded by other display devices 10.

[0058] Each of the plurality of display devices 10 may include a display area DA and a non-display area NDA. The display area DA may include a plurality of pixels and display an image. The non-display area NDA may be arranged around the display area DA and may not display an image.

[0059] The tile-type display device TD can have a planar shape as a whole, but is not limited to this. The tile-type display device TD can give users a sense of three-dimensionality by having a three-dimensional shape. For example, in the case where the tile-type display device TD has a three-dimensional shape, at least a portion of the multiple display devices 10 can have a curved shape. As another example, each of the multiple display devices 10 can have a three-dimensional shape by having a planar shape and being connected to each other at a predetermined angle.

[0060] A tile-type display device TD can be formed by connecting the non-display areas NDA of each of adjacent display devices 10. Multiple display devices 10 can be connected to each other via bonding or adhesive components. Therefore, the non-display areas NDA between multiple display devices 10 can be surrounded by adjacent display areas DA. The distance between the display areas DA of each of the multiple display devices 10 can be close enough that the non-display areas NDA or the boundary portions between the multiple display devices 10 are not recognizable to the user. Furthermore, the external light reflectivity of the display areas DA of each of the multiple display devices 10 can be substantially the same as the external light reflectivity of the non-display areas NDA between the multiple display devices 10. Accordingly, the tile-type display device TD can prevent the non-display areas NDA or boundary portions between multiple display devices 10 from being recognized, thereby eliminating the sense of separation between the multiple display devices 10 and improving the immersive experience of the image.

[0061] Figure 2 This is a plan view showing a display device according to an embodiment.

[0062] Reference Figure 2The display device 10 may include a plurality of pixels arranged along a plurality of rows and columns in a display area DA. Each of the plurality of pixels may include a light-emitting area LA defined by a pixel-defining film, and may emit light having a predetermined peak wavelength through the light-emitting area LA. For example, the display area DA of the display device 10 may include a first light-emitting area LA1 to a third light-emitting area LA3. Each of the first light-emitting area LA1 to the third light-emitting area LA3 may be a region that emits light generated by the light-emitting element of the display device 10 to the outside of the display device 10.

[0063] The first light-emitting region LA1 to the third light-emitting region LA3 can emit light with a predetermined peak wavelength to the outside of the display device 10. The first light-emitting region LA1 can emit light of a first color, the second light-emitting region LA2 can emit light of a second color, and the third light-emitting region LA3 can emit light of a third color. For example, the first color of light can be red light with a peak wavelength in the range of 610 nm to 650 nm, the second color of light can be green light with a peak wavelength in the range of 510 nm to 550 nm, and the third color of light can be blue light with a peak wavelength in the range of 440 nm to 480 nm, but it is not limited to these.

[0064] The first light-emitting areas LA1 to the third light-emitting areas LA3 can be arranged sequentially along the first direction (X-axis direction) of the display area DA. For example, the width of the first light-emitting area LA1 in the first direction (X-axis direction) can be wider than the width of the second light-emitting area LA2 in the first direction, and the width of the second light-emitting area LA2 in the first direction can be wider than the width of the third light-emitting area LA3 in the first direction. As another example, the widths of the first light-emitting area LA1, the second light-emitting area LA2, and the third light-emitting area LA3 in the first direction can be substantially the same.

[0065] For example, the area of ​​the first luminous region LA1 can be wider than the area of ​​the second luminous region LA2, and the area of ​​the second luminous region LA2 can be wider than the area of ​​the third luminous region LA3. Alternatively, the areas of the first luminous region LA1, the second luminous region LA2, and the third luminous region LA3 can be substantially the same.

[0066] The display area DA of the display device 10 may include multiple light-shielding areas BA surrounding multiple light-emitting areas LA. For example, the display area DA may include first light-shielding areas BA1 to third light-shielding areas BA3. The first light-shielding area BA1, the second light-shielding area BA2, and the third light-shielding area BA3 may each be arranged on one side of the first light-emitting area LA1, the second light-emitting area LA2, and the third light-emitting area LA3, and may prevent color mixing of light emitted from the first light-emitting area LA1 to the third light-emitting area LA3.

[0067] Figure 3 It is along Figure 2 The cross-sectional view taken by the intercept I-I'. Figure 4 yes Figure 3 A magnified view of region A1.

[0068] Reference Figure 3 and Figure 4 The display area DA of the display device 10 may include a first light-emitting area LA1 to a third light-emitting area LA3. Each of the first light-emitting area LA1 to the third light-emitting area LA3 may be an area that emits light generated by the light-emitting diode ED of the display device 10 to the outside of the display device 10.

[0069] The display device 10 may include a substrate SUB, a color filter layer CFL, a wavelength conversion layer WLCL, a thin film transistor layer TFTL, a light-emitting element layer EML, an encapsulation layer TFE, a metal layer HRL, and a protective film PF.

[0070] The substrate SUB can be a base substrate or a base component, and can be made of insulating materials such as polymer resins. For example, the substrate SUB can be a flexible substrate capable of bending, folding, and rolling. The substrate SUB may include, but is not limited to, polyimide (PI).

[0071] The color filter layer CFL may include a first light-shielding component BK1, first color filters CF1 to third color filters CF3, a first protective layer PAS1, and a first planarization layer OC1.

[0072] The first light-shielding component BK1 can be disposed on the substrate SUB in the first light-shielding area BA1 to the third light-shielding area BA3. The first light-shielding component BK1 can overlap with the second light-shielding component BK2 in the thickness direction. The first light-shielding component BK1 can block the transmission of light. The first light-shielding component BK1 can prevent light from entering between the first light-emitting area LA1 to the third light-emitting area LA3 and causing color mixing, thereby improving the color reproduction rate. The first light-shielding component BK1 can be arranged in a grid pattern around the first light-emitting area LA1 to the third light-emitting area LA3 on a plane.

[0073] A first color filter CF1 can be disposed on a first light-emitting region LA1 on a substrate SUB. The first color filter CF1 can be surrounded by a first light-shielding member BK1. The first color filter CF1 can overlap with a first wavelength conversion section WLC1 in the thickness direction. The first color filter CF1 can selectively transmit light of a first color (e.g., red light) and block or absorb light of a second color (e.g., green light) and a third color (e.g., blue light). For example, the first color filter CF1 can be a red color filter and can include a red colorant. The red colorant can be made using red dye or red pigment.

[0074] The second color filter CF2 can be disposed on the second light-emitting region LA2 on the substrate SUB. The second color filter CF2 can be surrounded by the first light-shielding member BK1. The second color filter CF2 can overlap with the second wavelength conversion section WLC2 in the thickness direction. The second color filter CF2 can selectively transmit light of a second color (e.g., green light) and block or absorb light of a first color (e.g., red light) and a third color (e.g., blue light). For example, the second color filter CF2 can be a green color filter and can include a green colorant. The green colorant can be made using green dye or green pigment.

[0075] A third color filter CF3 can be disposed on a third light-emitting region LA3 on a substrate SUB. The third color filter CF3 can be surrounded by a first light-shielding member BK1. The third color filter CF3 can overlap with the light-transmitting portion LTU in the thickness direction. The third color filter CF3 can selectively transmit light of a third color (e.g., blue light) and block or absorb light of a first color (e.g., red light) and a second color (e.g., green light). For example, the third color filter CF3 can be a blue color filter and can include a blue colorant. The blue colorant can be made using blue dye or blue pigment.

[0076] The first color filter CF1 to the third color filter CF3 can absorb a portion of the light flowing in from the outside of the display device 10, thereby reducing reflected light caused by external light. Therefore, the first color filter CF1 to the third color filter CF3 can prevent color distortion caused by external light reflection.

[0077] Since the first color filter CF1 to the third color filter CF3 are arranged between the substrate SUB and the thin-film transistor layer TFTL, the display device 10 does not require an additional substrate for the first color filter CF1 to the third color filter CF3. Therefore, the thickness of the display device 10 can be relatively reduced.

[0078] The first protective layer PAS1 can cover the first color filter CF1 to the third color filter CF3. The first protective layer PAS1 can protect the first color filter CF1 to the third color filter CF3.

[0079] The first planarization layer OC1 may be disposed on top of the first protective layer PAS1, thereby planarizing the upper end of the color filter layer CFL. The first planarization layer OC1 may include an organic material. For example, the first planarization layer OC1 may include at least one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0080] The wavelength conversion layer WLCL may include a first capping layer CAP1, a second light-shielding component BK2, a first wavelength conversion part WLC1, a second wavelength conversion part WLC2, a light-transmitting part LTU, a second capping layer CAP2, and a second planarization layer OC2.

[0081] The first capping layer CAP1 can be disposed on the first planarization layer OC1 of the color filter layer CFL. The first capping layer CAP1 can seal the lower surfaces of the first wavelength conversion section WLC1, the second wavelength conversion section WLC2, and the light-transmitting section LTU. The first capping layer CAP1 may include an inorganic material. For example, the first capping layer CAP1 may include at least one of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon nitride.

[0082] The second light-shielding component BK2 can be arranged on the first cover layer CAP1, from the first light-shielding area BA1 to the third light-shielding area BA3. The second light-shielding component BK2 can overlap with the first light-shielding component BK1 in the thickness direction. The second light-shielding component BK2 can block light transmission. The second light-shielding component BK2 can prevent light from entering between the first light-emitting area LA1 to the third light-emitting area LA3 and causing color mixing, thereby improving color reproduction efficiency. The second light-shielding component BK2 can be arranged in a grid pattern around the first light-emitting area LA1 to the third light-emitting area LA3 on a plane.

[0083] The second light-shielding component BK2 may include an organic light-shielding material and a hydrophobic component. The hydrophobic component may be composed of a fluorinated monomer or a fluorinated polymer, specifically, it may include a fluorinated aliphatic polycarbonate. For example, the second light-shielding component BK2 may be composed of a black organic material including the hydrophobic component. The second light-shielding component BK2 may be formed through a coating process and an exposure process using the organic light-shielding material containing the hydrophobic component.

[0084] The second light-shielding component BK2 can separate the first wavelength conversion section WLC1, the second wavelength conversion section WLC2, and the light-transmitting section LTU to their respective light-emitting regions LA by including a hydrophobic component. For example, in the case where the first wavelength conversion section WLC1, the second wavelength conversion section WLC2, and the light-transmitting section LTU are formed by inkjet printing, the ink composition may flow on the upper surface of the second light-shielding component BK2. In this case, the second light-shielding component BK2 can guide the ink composition to each light-emitting region LA by including a hydrophobic component. Therefore, the second light-shielding component BK2 can prevent the ink composition from mixing.

[0085] The first wavelength conversion unit WLC1 can be disposed on the first light-emitting region LA1 on the first capping layer CAP1. The first wavelength conversion unit WLC1 can be surrounded by the second light-shielding component BK2. The first wavelength conversion unit WLC1 may include a first base resin BS1, a first scatterer SCT1, and a first wavelength shifter WLS1.

[0086] The first base resin BS1 may include substances with relatively high light transmittance. The first base resin BS1 may be composed of transparent organic substances. For example, the first base resin BS1 may include at least one of the following organic substances: epoxy resin, acrylic resin, Cardo resin, and imide resin.

[0087] The first scatterer SCT1 may have a different refractive index than the first base resin BS1 and may form an optical interface with the first base resin BS1. For example, the first scatterer SCT1 may include a light-scattering material or light-scattering particles that scatter at least a portion of the transmitted light. For example, the first scatterer SCT1 may include metal oxides such as titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), or may include organic particles such as acrylic resins or polyurethane resins. The first scatterer SCT1 can scatter light in random directions independent of the incident direction of the incident light without substantially changing the peak wavelength of the incident light.

[0088] The first wavelength shifter WLS1 can convert or shift the peak wavelength of the incident light to a first peak wavelength. For example, the first wavelength shifter WLS1 can convert and emit red light with a single peak wavelength in the range of 610 nm to 650 nm supplied by the display device 10. The first wavelength shifter WLS1 can be a quantum dot, a quantum rod, or a phosphor. A quantum dot can be a particulate material that emits a specific color when electrons migrate from the conduction band to the valence band.

[0089] For example, quantum dots can be semiconductor nanocrystal materials. Quantum dots can have specific band gaps depending on their composition and size, thereby emitting light with an inherent wavelength after absorbing light. Examples of semiconductor nanocrystals containing quantum dots can include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or combinations thereof.

[0090] The light emitted by the first wavelength shifter WLS1 can have a full width at half maximum (FWHM) of a emission wavelength spectrum below 45 nm, 40 nm, or 30 nm, and can further improve the color purity and color reproduction of the colors displayed by the display device 10. The light emitted by the first wavelength shifter WLS1 can be emitted in multiple directions regardless of the incident direction of the incident light. Therefore, the lateral recognition of red displayed in the first emitting region LA1 can be improved.

[0091] A portion of the light supplied by the light-emitting element layer EML can be transmitted through the first wavelength conversion section WLC1 instead of being converted to red light by the first wavelength shifter WLS1. Of the light supplied by the light-emitting element layer EML, the light that is not converted by the first wavelength conversion section WLC1 and is incident on the first color filter CF1 can be blocked by the first color filter CF1. Furthermore, of the light supplied by the light-emitting element layer EML, the red light converted by the first wavelength conversion section WLC1 can be transmitted through the first color filter CF1 and emitted to the outside. Therefore, the first light-emitting region LA1 can emit red light.

[0092] The second wavelength conversion unit WLC2 can be disposed on the second light-emitting region LA2 on the first capping layer CAP1. The second wavelength conversion unit WLC2 can be surrounded by the second light-shielding member BK2. The second wavelength conversion unit WLC2 may include the second base resin BS2, the second scatterer SCT2, and the second wavelength shifter WLS2.

[0093] The second base resin BS2 may include a substance with relatively high light transmittance. The second base resin BS2 may be composed of a transparent organic substance. For example, the second base resin BS2 may be composed of the same substance as the first base resin BS1, or it may be composed of a substance exemplified in the first base resin BS1.

[0094] The second scatterer SCT2 may have a different refractive index than the second base resin BS2 and may form an optical interface with the second base resin BS2. For example, the second scatterer SCT2 may include a light-scattering material or light-scattering particles that scatter at least a portion of the transmitted light. For example, the second scatterer SCT2 may be constructed using the same material as the first scatterer SCT1, or it may be constructed using the material exemplified in the first scatterer SCT1. The second scatterer SCT2 can scatter light in random directions independent of the incident direction of the incident light without substantially changing the peak wavelength of the incident light.

[0095] The second wavelength shifter WLS2 can convert or shift the peak wavelength of the incident light to a second peak wavelength different from the first peak wavelength of the first wavelength shifter WLS1. For example, the second wavelength shifter WLS2 can convert and emit green light with a single peak wavelength in the range of 510 nm to 550 nm, supplied by the display device 10. The second wavelength shifter WLS2 can be a quantum dot, a quantum rod, or a phosphor. The second wavelength shifter WLS2 can include a material with the same properties as the material exemplified in the first wavelength shifter WLS1. The second wavelength shifter WLS2 can be constructed using quantum dots, quantum rods, or phosphors in a way that makes the wavelength conversion range of the second wavelength shifter WLS2 different from that of the first wavelength shifter WLS1.

[0096] The light-transmitting portion LTU can be arranged in the third light-emitting region LA3 on the first capping layer CAP1. The light-transmitting portion LTU can be surrounded by the second light-shielding member BK2. The light-transmitting portion LTU can maintain the peak wavelength of the incident light and allow the incident light to be transmitted. The light-transmitting portion LTU may include a third base resin BS3 and a third diffuser SCT3.

[0097] The third base resin BS3 may include a substance with relatively high light transmittance. The third base resin BS3 may be composed of a transparent organic substance. For example, the third base resin BS3 may be composed of the same substance as the first base resin BS1 or the second base resin BS2, or it may be composed of the substance exemplified in the first base resin BS1 or the second base resin BS2.

[0098] The third scatterer SCT3 may have a different refractive index than the third base resin BS3 and may form an optical interface with the third base resin BS3. For example, the third scatterer SCT3 may include a light-scattering material or light-scattering particles that scatter at least a portion of the transmitted light. For example, the third scatterer SCT3 may be constructed using the same material as the first scatterer SCT1 or the second scatterer SCT2, or it may be constructed using the material exemplified by the first scatterer SCT1 or the second scatterer SCT2. The third scatterer SCT3 may scatter light in random directions independent of the incident direction of the incident light without substantially changing the peak wavelength of the incident light.

[0099] Since the first wavelength conversion unit WLC1, the second wavelength conversion unit WLC2, and the light-transmitting unit LTU are arranged between the color filter layer CFL and the thin-film transistor layer TFTL, the display device 10 does not require an additional substrate for the first wavelength conversion unit WLC1, the second wavelength conversion unit WLC2, and the light-transmitting unit LTU. Therefore, the first wavelength conversion unit WLC1, the second wavelength conversion unit WLC2, and the light-transmitting unit LTU can be easily aligned with the first light-emitting region LA1 to the third light-emitting region LA3, respectively, and the thickness of the display device 10 can be relatively reduced.

[0100] The second capping layer CAP2 can cover the first wavelength conversion section WLC1, the second wavelength conversion section WLC2, the light-transmitting section LTU, and the second light-shielding member BK2. For example, the second capping layer CAP2 can seal the first wavelength conversion section WLC1, the second wavelength conversion section WLC2, and the light-transmitting section LTU, thereby preventing damage or contamination to the first wavelength conversion section WLC1, the second wavelength conversion section WLC2, and the light-transmitting section LTU. The second capping layer CAP2 can be made of the same material as the first capping layer CAP1, or it can be made of the material exemplified in the first capping layer CAP1.

[0101] The second planarization layer OC2 can be disposed on top of the second capping layer CAP2, thereby planarizing the upper end of the wavelength conversion layer WLCL. The second planarization layer OC2 may include an organic material. For example, the second planarization layer OC2 may include at least one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0102] The thin-film transistor layer (TFTL) may include a thin-film transistor (TFT), a gate insulating film (GI), an interlayer insulating film (ILD), a connection electrode (CNE), a second protective layer (PAS2), and a third planarization layer (OC3).

[0103] Thin-film transistors (TFTs) can be disposed on the second planarization layer OC2 of the wavelength conversion layer (WLCL) and can constitute the pixel circuit for each of multiple pixels. For example, the TFT can be a driving transistor or a switching transistor of the pixel circuit. The TFT may include a semiconductor region ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE.

[0104] The semiconductor region ACT, source electrode SE, and drain electrode DE can be disposed on the second planarization layer OC2 of the wavelength conversion layer WLCL. The semiconductor region ACT can overlap with the gate electrode GE in the thickness direction and can be insulated by the gate insulating film GI. The source electrode SE and drain electrode DE can be disposed by making the semiconductor region ACT a conductor.

[0105] The gate electrode GE can be disposed on top of the gate insulating film GI. The gate electrode GE can overlap with the semiconductor region ACT, and the gate insulating film GI can be disposed between the gate electrode GE and the semiconductor region ACT.

[0106] The gate insulating film GI can be disposed on top of the semiconductor region ACT, the source electrode SE, and the drain electrode DE. For example, the gate insulating film GI can cover the semiconductor region ACT, the source electrode SE, the drain electrode DE, and the second planarization layer OC2, and can insulate the semiconductor region ACT from the gate electrode GE. The gate insulating film GI may include a contact hole through which the connection electrode CNE passes.

[0107] The interlayer insulating film (ILD) can be disposed on top of the gate electrode GE. For example, the ILD may include contact holes that allow the connection electrode CNE to pass through. The contact holes of the ILD can be connected to the contact holes of the gate insulating film GI.

[0108] The connection electrode CNE can be disposed on the interlayer insulating film ILD. The connection electrode CNE can connect the drain electrode DE of the thin-film transistor TFT and the first electrode AE ​​of the light-emitting element EL. The connection electrode CNE can contact the drain electrode DE through contact holes disposed on the gate insulating film GI and the interlayer insulating film ILD.

[0109] The second protective layer PAS2 can be disposed above the connecting electrode CNE to protect the thin-film transistor TFT. For example, the second protective layer PAS2 may include a contact hole through which the first electrode AE ​​of the light-emitting element EL passes.

[0110] The third planarization layer OC3 can be disposed on top of the second protective layer PAS2 to planarize the upper end of the thin-film transistor layer TFTL. For example, the third planarization layer OC3 may include a contact hole through which the first electrode AE ​​of the light-emitting element EL passes. The contact hole of the third planarization layer OC3 can be connected to the contact hole of the second protective layer PAS2.

[0111] The light-emitting element layer EML may include a light-emitting element EL, a first contact electrode CTE1, a second contact electrode CTE2, a first insulating film IL1, a second insulating film IL2, a third protective layer PAS3, and a reflective component RM.

[0112] The light-emitting element EL can be disposed on the third planarization layer OC3 of the thin-film transistor layer TFTL. The light-emitting element EL can be disposed to overlap with one of the light-emitting regions LA1 to LA3.

[0113] The light-emitting element EL may include a first electrode AE, a second electrode CE, and a light-emitting diode ED.

[0114] The first electrode AE ​​can be disposed on the third planarization layer OC3 of the thin-film transistor layer TFTL. The first electrode AE ​​can be connected to the connection electrode CNE through contact holes disposed in the third planarization layer OC3 and the second protective layer PAS2. The first electrode AE ​​can be connected to the drain electrode DE of the thin-film transistor TFT through the connection electrode CNE. The first electrode AE ​​can be the anode of the light-emitting element EL, but is not limited thereto.

[0115] The second electrode CE can be arranged on the third planarization layer OC3 of the thin-film transistor layer TFTL, spaced apart from the first electrode AE. For example, the second electrode CE can receive the common voltage supplied to all pixels. The second electrode CE can be the cathode of the light-emitting element EL, but is not limited thereto.

[0116] A light-emitting diode (ED) can be disposed on the third planarization layer OC3 of the thin-film transistor layer (TFTL) between the first electrode AE ​​and the second electrode CE. The ED can be arranged to be spaced apart from both the first electrode AE ​​and the second electrode CE. One end of the ED can be connected to the first electrode AE ​​via a first contact electrode CTE1, and the other end can be connected to the second electrode CE via a second contact electrode CTE2. For example, multiple EDs can include active layers of the same material, thereby emitting light of the same wavelength or the same color. The light emitted from each of the first emitting region LA1 to the third emitting region LA3 can have the same color. For example, multiple EDs can emit light of a third color or blue light with a peak wavelength in the range of 440 nm to 480 nm. Therefore, the light-emitting element layer (EML) can emit light of a third color or blue light.

[0117] The first contact electrode CTE1 can cover one end of the light-emitting diode ED and the first electrode AE. The first contact electrode CTE1 can connect one end of the light-emitting diode ED and the first electrode AE. The first contact electrode CTE1 can be insulated from the second contact electrode CTE2 by means of the first insulating film IL1 and the second insulating film IL2.

[0118] The second contact electrode CTE2 can cover the other end of the light-emitting diode ED and the second electrode CE. The second contact electrode CTE2 can be connected to the other end of the light-emitting diode ED and the second electrode CE. The second contact electrode CTE2 can be insulated from the first contact electrode CTE1 by the first insulating film IL1 and the second insulating film IL2.

[0119] The first insulating film IL1 can cover a portion of the light-emitting diode ED. The first insulating film IL1 can prevent the second contact electrode CTE2 from extending to one end of the light-emitting diode ED. The first insulating film IL1 can insulate the first contact electrode CTE1 from the second contact electrode CTE2.

[0120] The second insulating film IL2 can cover a portion of the first insulating film IL1 and the second electrode CE. The second insulating film IL2 can prevent the first contact electrode CTE1 from extending to the second contact electrode CTE2.

[0121] The third protective layer PAS3 can cover the light-emitting element EL, the first contact electrode CTE1, and the second contact electrode CTE2. The third protective layer PAS3 can be arranged to overlap with one of the light-emitting areas from the first light-emitting area LA1 to the third light-emitting area LA3. The third protective layer PAS3 can prevent impurities such as moisture or air from penetrating from the outside, thereby preventing damage to multiple light-emitting elements EL.

[0122] The third protective layer PAS3 may include a material with relatively high light transmittance. The third protective layer PAS3 may be composed of transparent organic materials. For example, the third protective layer PAS3 may include at least one organic material selected from epoxy resins, acrylic resins, Cardo resins, and imide resins. For example, the third protective layer PAS3 may define the shape of the reflective component RM.

[0123] The reflective component RM can cover the third protective layer PAS3. The reflective component RM can reflect the light L emitted by the light-emitting diode ED towards the substrate SUB. The light L emitted by the light-emitting diode ED can be reflected by the reflective component RM and can pass through the thin-film transistor layer TFTL, wavelength conversion layer WLCL, and color filter layer CFL to be emitted in front of the display device 10. For example, the light L reflected by the reflective component RM can pass through the first wavelength conversion section WLC1 and the first color filter CF1 to be emitted towards the first light-emitting area LA1. The light emitted by the reflective component RM can pass through the second wavelength conversion section WLC2 and the second color filter CF2 to be emitted towards the second light-emitting area LA2. Furthermore, the light emitted by the reflective component RM can pass through the light-transmitting section LTU and the third color filter CF3 to be emitted towards the third light-emitting area LA3. The shape of the reflective component RM can be determined by the third protective layer PAS3, and the reflective component RM can have a shape that maximizes the light emission efficiency of the light-emitting element layer EML.

[0124] For example, the reflective component RM may include alloys, nitrides, or oxides containing at least one of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), copper (Cu), lithium fluoride / calcium (LiF / Ca), and lithium fluoride / aluminum (LiF / Al). The reflective component RM may have a single-layer structure or a multi-layer structure.

[0125] The encapsulation layer TFE can cover the light-emitting element layer EML. For example, the encapsulation layer TFE can cover the upper and side surfaces of the reflective component RM and a portion of the thin-film transistor layer TFTL. For example, the encapsulation layer TFE may include at least one inorganic film to prevent oxygen or moisture penetration. Furthermore, the encapsulation layer TFE may include at least one organic film to protect the display device 10 from foreign matter such as dust.

[0126] The metal layer HRL can be disposed on the encapsulation layer TFE. The metal layer HRL can dissipate heat generated inside the display device 10 to the outside. The thermal conductivity of the metal layer HRL can be higher than that of the encapsulation layer TFE. In cases where heat generated from the light-emitting element layer EML or the thin-film transistor layer TFTL is transferred through the encapsulation layer TFE, the metal layer HRL can dissipate heat to the outside of the display device 10.

[0127] The protective film PF can be applied to the metal layer HRL. The protective film PF can cover the metal layer HRL, thereby preventing damage to the metal layer HRL.

[0128] Figure 5 This is a diagram illustrating a light-emitting element according to one embodiment.

[0129] Reference Figure 5 A light-emitting diode (ED) may include a first semiconductor layer 111, a second semiconductor layer 113, an active layer 115, an electrode layer 117, and an insulating film 118. For example, an ED may have dimensions in micrometer or nanometer units, and may be an inorganic ED incorporating inorganic materials. An inorganic ED can be aligned between two electrodes based on an electric field formed in a specific direction between two opposing electrodes.

[0130] The first semiconductor layer 111 can be an n-type semiconductor. For example, in the case where a light-emitting diode (ED) emits blue light, the first semiconductor layer 111 can include a semiconductor with the chemical formula Al. x Ga y In 1-x-y The first semiconductor layer 111 may comprise at least one semiconductor material selected from AlGaInN, GaN, AlGaN, InGaN, AlN, and InN, which is doped with n-type dopant. The first semiconductor layer 111 may be doped with n-type dopant such as Si, Ge, or Sn. The first semiconductor layer 111 may be n-GaN doped with n-type Si. The length of the first semiconductor layer 111 may range from 1.5 μm to 5 μm, but is not limited thereto.

[0131] The second semiconductor layer 113 can be disposed on the active layer 115. For example, in the case where the light-emitting diode (ED) emits blue or green light, the second semiconductor layer 113 may include a semiconductor layer having the chemical formula Al. x Ga y In 1-x-yThe second semiconductor layer 113 may be a semiconductor material of type N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the second semiconductor layer 113 may include at least one semiconductor material selected from AlGaInN, GaN, AlGaN, InGaN, AlN, and InN, which is doped with p-type dopant. The second semiconductor layer 113 may be doped with p-type dopants such as Mg, Zn, Ca, Se, and Ba. The second semiconductor layer 113 may be p-GaN doped with p-type Mg. The length of the second semiconductor layer 113 may be in the range of 0.05 μm to 0.10 μm, but is not limited thereto.

[0132] Each of the first semiconductor layer 111 and the second semiconductor layer 113 may be formed as a single layer, but is not limited thereto. For example, each of the first semiconductor layer 111 and the second semiconductor layer 113 may have multiple layers including a cladding layer or a tensile strain barrier reducing (TSBR) layer.

[0133] An active layer 115 may be disposed between a first semiconductor layer 111 and a second semiconductor layer 113. The active layer 115 may comprise a single quantum well structure or a multi-quantum well structure. In the case where the active layer 115 comprises a multi-quantum well structure, multiple quantum layers and well layers may be stacked alternately. The active layer 115 emits light by the recombination of electron-hole pairs based on an electrical signal applied through the first semiconductor layer 111 and the second semiconductor layer 113. For example, in the case where the active layer 115 emits blue light, it may comprise materials such as AlGaN or AlGaInN. In the case where the active layer 115 is a multi-quantum well structure with alternating stacked quantum layers and well layers, the quantum layers may comprise materials such as AlGaN or AlGaInN, and the well layers may comprise materials such as GaN or AlInN. The active layer 115 may emit blue light by comprising AlGaInN as a quantum layer and AlInN as a well layer.

[0134] As another example, the active layer 115 may have a structure in which semiconductor materials with high band gap energy and semiconductor materials with low band gap energy are stacked alternately, and may include group 3 to group 5 semiconductor materials depending on the wavelength of the emitted light. The light emitted by the active layer 115 is not limited to blue light, and may emit red or green light depending on the situation. The length of the active layer 115 may be in the range of 0.05 μm to 0.10 μm, but is not limited thereto.

[0135] Light emitted from the active layer 115 can be emitted along the length of the light-emitting diode (ED) or towards both sides of the ED. The directionality of the light emitted from the active layer 115 is unrestricted.

[0136] Electrode layer 117 can be an ohmic contact electrode. Alternatively, electrode layer 117 can also be a Schottky contact electrode. A light-emitting diode (ED) can include at least one electrode layer 117. When the ED is electrically connected to an electrode, electrode layer 117 can reduce the resistance between the ED and the electrode. Electrode layer 117 can include a conductive metal. For example, electrode layer 117 can include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin-zinc oxide (ITZO). Electrode layer 117 can also include a semiconductor material doped with n-type or p-type semiconductors.

[0137] The insulating film 118 may surround the outer surfaces of multiple semiconductor layers and electrode layers. The insulating film 118 may surround the outer surface of the active layer 115 and may extend along the direction in which the light-emitting diode ED extends. The insulating film 118 may protect the light-emitting diode ED. For example, the insulating film 118 may surround the side surface of the light-emitting diode ED and may expose both ends of the light-emitting diode ED in the longitudinal direction.

[0138] The insulating film 118 may include a material with insulating properties, such as silicon oxide (SiO2). x Silicon oxide and silicon nitride (SiN) x Silicon nitride, silicon oxynitride (SiO2) x N y Materials include aluminum nitride (AlN) and aluminum oxide (Al2O3). Therefore, the insulating film 118 can prevent short circuits that may occur when the active layer 115 is in direct contact with the electrodes that transmit electrical signals to the light-emitting diode (ED). Furthermore, the insulating film 118, by including the active layer 115, protects the outer surface of the ED, thereby preventing a decrease in luminous efficiency.

[0139] The outer surface of the insulating film 118 can be surface treated. During the manufacture of the display device 10, light-emitting diodes (EDs) can be sprayed onto electrodes and aligned in a dispersed state within a predetermined ink. By applying a hydrophobic or hydrophilic treatment to the surface of the insulating film 118, the EDs can maintain a dispersed state within the ink without agglomerating with adjacent EDs.

[0140] Figure 6 This is a plan view showing the combined structure of a tile-type display device according to an embodiment. Figure 7 It is along Figure 6 A cross-sectional view of an example taken by section II-II'. The following will briefly describe or omit configurations that are the same as those described above.

[0141] Reference Figure 6 as well as Figure 7 The tile-type display device TD may include multiple display devices 10 and connecting components 20. For example, the tile-type display device TD may include a first display device 10-1 to a fourth display device 10-4, but the number of display devices 10 is not limited. Figure 6 The number of display devices 10 can be determined based on the size of each of the display devices 10 and the tile-type display devices TD.

[0142] Each of the first display device 10-1 and the second display device 10-2 may include a substrate SUB, a color filter layer CFL, a wavelength conversion layer WLCL, a thin film transistor layer TFTL, a light-emitting element layer EML, an encapsulation layer TFE, a metal layer HRL, a protective film PF, a pad PD, a connecting film ACF, a flexible film 210, and a source driving part 220.

[0143] The substrate SUB can be a base substrate or a base component, and can be made of insulating materials such as polymer resins. For example, the substrate SUB can be a flexible substrate capable of bending, folding, and rolling. The substrate SUB may include, but is not limited to, polyimide (PI).

[0144] The color filter layer (CFL), wavelength conversion layer (WLCL), thin-film transistor layer (TFTL), light-emitting element layer (EML), and encapsulation layer (TFE) can be sequentially stacked on the substrate SUB. Therefore, the substrate SUB can support the display device 10. Because the color filter layer (CFL), wavelength conversion layer (WLCL), thin-film transistor layer (TFTL), light-emitting element layer (EML), and encapsulation layer (TFE) are sequentially stacked on the substrate SUB, the display device 10 does not require an additional substrate for the wavelength conversion layer (WLCL) or the color filter layer (CFL). Therefore, the thickness of the display device 10 can be relatively reduced.

[0145] The thin-film transistor layer (TFTL) may include interconnect wiring (CWL) disposed on the interlayer insulating film (ILD). The interconnect wiring CWL and the interconnect electrode (CNE) may be constructed using the same material in the same layer. The interconnect wiring CWL may be disposed in the light-shielding area BA of the display area DA or the non-display area NDA. The interconnect wiring CWL may overlap with the first light-shielding component BK1 and the second light-shielding component BK2. The interconnect wiring CWL can supply voltage or signals from the pad portion (PD) to the thin-film transistor TFT. For example, the interconnect wiring CWL can supply data voltage received from the pad portion (PD) to the data line, and can supply power supply voltage received from the pad portion (PD) to the power line.

[0146] The pad portion (PD) can be disposed on the edge of the display device 10 on the encapsulation layer (TFE). The pad portion (PD) can be connected to the connection wiring CWL of the thin-film transistor layer (TFTL) through the first contact hole (CNT1) that passes through the encapsulation layer (TFE), the third planarization layer (OC3), and the second protective layer (PAS2). The pad portion (PD) can supply voltage or signals received from the flexible film 210 or the source driving section 220 to the connection wiring CWL.

[0147] The pad portion (PD) can be arranged behind the display device 10. For example, light emitted from the light-emitting element layer (EML) can be reflected by the reflective component (RM), and then emitted towards the front of the display device 10 through the thin-film transistor layer (TFTL), wavelength conversion layer (WLCL), color filter layer (CFL), and substrate (SUB). The pad portion (PD) can be arranged behind the display device 10 to minimize the area of ​​the non-display area (NDA) of the display device 10. For example, the pad portion (PD) can be arranged in the light-shielding area (BA) of the display area (DA) or the non-display area (NDA). The pad portion (PD) can overlap with the first light-shielding component (BK1) and the second light-shielding component (BK2). Therefore, the tile-type display device (TD) can prevent the user from identifying the non-display area (NDA) or boundary portion between the multiple display devices 10 by minimizing the spacing between them.

[0148] The pad PD and the metal layer HRL can be constructed using the same material in the same layer. The pad PD and the metal layer HRL can be fabricated by patterning the material constituting the pad PD and the metal layer HRL after coating the encapsulation layer TFE. Therefore, the display device 10 can reduce process steps and processing time, and lower manufacturing costs.

[0149] The connecting film ACF can attach the flexible film 210 to the pad portion PD. One surface of the connecting film ACF can be attached to the pad portion PD, and the other surface of the connecting film ACF can be attached to the flexible film 210. For example, the connecting film ACF can cover the entire pad portion PD, but is not limited thereto.

[0150] The connecting film ACF may include anisotropic conductive film. When the connecting film ACF includes anisotropic conductive film, the connecting film ACF may be conductive in the area where the pad PD and the contact pad of the flexible film 210 are in contact, and the flexible film 210 may be electrically connected to the pad PD.

[0151] The flexible film 210 can be disposed on the pad PD. One side of the flexible film 210 can be connected to the pad PD, and the other side of the flexible film 210 can be connected to the source circuit board (not shown). The flexible film 210 can transmit signals from the source drive unit 220 to the display device 10. For example, the source drive unit 220 can be an integrated circuit (IC). The source drive unit 220 can convert digital video data into analog data voltage based on the source control signal of the timing control unit and supply it to the data line of the display area DA through the flexible film 210.

[0152] The bonding component 20 can be arranged between each of the plurality of display devices 10, thereby bonding the side surfaces of adjacent display devices 10 together. The bonding component 20 can form a tile-type display device TD by connecting the side surfaces of the first display devices 10-1 to the fourth display devices 10-4 arranged in a grid pattern. The bonding component 20 can bond the side surfaces of the respective adjacent display devices 10.

[0153] For example, the bonding component 20 can be constructed using an adhesive or double-sided tape with a relatively thin thickness, thereby minimizing the spacing between the multiple display devices 10. As another example, the bonding component 20 can be constructed using a bonding frame with a relatively thin thickness, thereby minimizing the spacing between the multiple display devices 10. Therefore, the tile-type display device TD can prevent users from identifying the non-display area NDA or boundary portions between the multiple display devices 10.

[0154] Figure 8 It is along Figure 6 A cross-sectional view of another example taken by section II-II'. Figure 8 The display device in Figure 7 Based on the display device, the configuration of the connection wiring CWL has been modified. Configurations that are the same as those described above will be briefly described or omitted.

[0155] Reference Figure 8The thin-film transistor layer (TFTL) may include connection wiring (CWL) disposed on the gate insulating film (GI). The connection wiring CWL and the gate electrode (GE) of the TFT may be constructed using the same material in the same layer. The connection wiring CWL may be disposed in the light-shielding area (BA) of the display area (DA) or the non-display area (NDA). The connection wiring CWL may overlap with the first light-shielding component (BK1) and the second light-shielding component (BK2). The connection wiring CWL can supply voltage or signals from the pad portion (PD) to the TFT. For example, the connection wiring CWL can supply the gate signal received from the pad portion (PD) to the gate line, and can supply the light-emitting signal received from the pad portion (PD) to the light-emitting control line.

[0156] The pad portion (PD) can be disposed on the edge of the display device 10 on the encapsulation layer (TFE). The pad portion (PD) can be connected to the connection wiring CWL of the thin-film transistor layer (TFTL) through the second contact hole (CNT2) penetrating the encapsulation layer (TFE), the third planarization layer (OC3), the second protective layer (PAS2), and the interlayer insulating film (ILD). The pad portion (PD) can supply voltage or signals received from the flexible film 210 or the source driving section 220 to the connection wiring CWL.

[0157] Figure 9 It is along Figure 6 Another example of a cross-section taken from the section line II-II'. Figure 9 The display device in Figure 7 Based on the display device, the configuration of the reflective component RM has been modified. Configurations that are the same as those described above will be briefly described or omitted.

[0158] Reference Figure 9 Each of the first display device 10-1 and the second display device 10-2 may include a substrate SUB, a color filter layer CFL, a wavelength conversion layer WLCL, a thin film transistor layer TFTL, a light-emitting element layer EML, a packaging layer TFE, a metal layer HRL, a protective film PF, a pad portion PD, a connecting film ACF, a flexible film 210, and a source driving portion 220.

[0159] The light-emitting element layer EML may include a light-emitting element EL, a first contact electrode CTE1, a second contact electrode CTE2, a first insulating film IL1, a second insulating film IL2, a third protective layer PAS3, and a reflective component RM.

[0160] The reflective component RM can cover the third protective layer PAS3 and the third planarization layer OC3. The reflective component RM can reflect the light L emitted by the light-emitting diode ED towards the substrate SUB. The light L emitted by the light-emitting diode ED can be reflected by the reflective component RM and can pass through the thin-film transistor layer TFTL, the wavelength conversion layer WLCL, and the color filter layer CFL to be emitted in front of the display device 10. For example, the light L reflected by the reflective component RM can pass through the first wavelength conversion section WLC1 and the first color filter CF1 to be emitted towards the first light-emitting area LA1. The light emitted from the reflective component RM can pass through the second wavelength conversion section WLC2 and the second color filter CF2 to be emitted towards the second light-emitting area LA2. Furthermore, the light emitted from the reflective component RM can pass through the light-transmitting section LTU and the third color filter CF3 to be emitted towards the third light-emitting area LA3. The shape of the reflective component RM can be determined by the third protective layer PAS3 and the third planarization layer OC3, and the reflective component RM can have a shape that maximizes the light emission efficiency of the light-emitting element layer EML.

[0161] For example, the reflective component RM may include alloys, nitrides, or oxides containing at least one of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), copper (Cu), lithium fluoride / calcium (LiF / Ca), and lithium fluoride / aluminum (LiF / Al). The reflective component RM may have a single-layer structure or a multi-layer structure.

[0162] The encapsulation layer TFE can cover the light-emitting element layer EML. The encapsulation layer TFE can cover the reflective component RM. For example, the encapsulation layer TFE can cover a portion of the third protective layer PAS3 covering the reflective component RM and another portion of the third planarization layer OC3 covering the reflective component RM. For example, the encapsulation layer TFE may include at least one inorganic film to prevent oxygen or moisture penetration. Furthermore, the encapsulation layer TFE may include at least one organic film to protect the display device 10 from foreign matter such as dust.

[0163] Figures 10 to 18 This is a cross-sectional view illustrating the manufacturing process of a display device according to an embodiment.

[0164] exist Figure 10 In this process, the color filter layer (CFL), the wavelength conversion layer (WLCL), and the thin-film transistor layer (TFTL) can be stacked sequentially on the substrate (SUB).

[0165] The color filter layer CFL may include a first light-shielding component BK1, first color filters CF1 to third color filters CF3, and a first planarization layer OC1.

[0166] The wavelength conversion layer WLCL may include a first capping layer CAP1, a second light-shielding component BK2, a first wavelength conversion part WLC1, a second wavelength conversion part WLC2, a light-transmitting part LTU, a second capping layer CAP2, and a second planarization layer OC2.

[0167] The thin-film transistor layer (TFTL) may include a thin-film transistor (TFT), a gate insulating film (GI), an interlayer insulating film (ILD), a connection electrode (CNE), a second protective layer (PAS2), and a third planarization layer (OC3).

[0168] exist Figure 11 In this design, the first electrode AE ​​can be disposed on the third planarization layer OC3 of the thin-film transistor layer TFTL. The first electrode AE ​​can be connected to the connection electrode CNE through contact holes disposed on the third planarization layer OC3 and the second protective layer PAS2. The first electrode AE ​​can be connected to the drain electrode DE of the thin-film transistor TFT through the connection electrode CNE. The first electrode AE ​​can be the anode of the light-emitting element EL, but is not limited thereto.

[0169] The second electrode CE can be arranged on the third planarization layer OC3 of the thin-film transistor layer TFTL, spaced apart from the first electrode AE. For example, the second electrode CE can receive the common voltage supplied to all pixels. The second electrode CE can be the cathode of the light-emitting element EL, but is not limited thereto.

[0170] exist Figure 12 In this embodiment, a light-emitting diode (ED) can be disposed on the third planarization layer OC3 of the thin-film transistor layer (TFTL) between a first electrode AE ​​and a second electrode CE. The ED can be arranged to be spaced apart from both the first electrode AE ​​and the second electrode CE. The ED can be aligned between the first electrode AE ​​and the second electrode CE based on an electric field formed in a specific direction between them. For example, the p-type semiconductor layer of the ED can face the first electrode AE, and the n-type semiconductor layer can face the second electrode CE, but this is not a limitation.

[0171] exist Figure 13 In this process, the first insulating film IL1 can cover a portion of the light-emitting diode ED. The first insulating film IL1 can prevent the second contact electrode CTE2 from extending to one end of the light-emitting diode ED.

[0172] The second contact electrode CTE2 can cover the other end of the light-emitting diode ED and the second electrode CE. For example, the second contact electrode CTE2 can connect the n-type semiconductor layer of the light-emitting diode ED and the second electrode CE.

[0173] exist Figure 14In this process, the second insulating film IL2 can cover a portion of the first insulating film IL1 and the second electrode CE. The second insulating film IL2 can prevent the first contact electrode CTE1 from extending into the second contact electrode CTE2.

[0174] The first contact electrode CTE1 may cover one end of the light-emitting diode ED and the first electrode AE. For example, the first contact electrode CTE1 may connect the p-type semiconductor layer of the light-emitting diode ED and the first electrode AE. The first contact electrode CTE1 may be insulated from the second contact electrode CTE2 by means of a first insulating film IL1 and a second insulating film IL2.

[0175] exist Figure 15 In this structure, the third protective layer PAS3 can cover the light-emitting element EL, the first contact electrode CTE1, and the second contact electrode CTE2. The third protective layer PAS3 can be arranged to overlap with one of the light-emitting regions LA1 to LA3. The third protective layer PAS3 can prevent impurities such as moisture or air from penetrating from the outside, thereby preventing damage to multiple light-emitting elements EL.

[0176] The third protective layer PAS3 may include a material with relatively high light transmittance. The third protective layer PAS3 may be composed of transparent organic materials. For example, the third protective layer PAS3 may include at least one organic material selected from epoxy resins, acrylic resins, Cardo resins, and imide resins. For example, the third protective layer PAS3 can determine the shape of the reflective component RM.

[0177] The reflective component RM can cover the third protective layer PAS3. The reflective component RM can reflect the light L emitted by the light-emitting diode ED towards the substrate SUB. The light L emitted by the light-emitting diode ED can be reflected by the reflective component RM and can pass through the thin-film transistor layer TFTL, wavelength conversion layer WLCL, and color filter layer CFL to be emitted in front of the display device 10. For example, the light L reflected by the reflective component RM can pass through the first wavelength conversion section WLC1 and the first color filter CF1 to be emitted towards the first light-emitting area LA1. The light emitted by the reflective component RM can pass through the second wavelength conversion section WLC2 and the second color filter CF2 to be emitted towards the second light-emitting area LA2. Furthermore, the light emitted by the reflective component RM can pass through the light-transmitting section LTU and the third color filter CF3 to be emitted towards the third light-emitting area LA3. The shape of the reflective component RM can be determined by the third protective layer PAS3, and the reflective component RM can have a shape that maximizes the light emission efficiency of the light-emitting element layer EML.

[0178] For example, the reflective component RM may include alloys, nitrides, or oxides containing at least one of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), copper (Cu), lithium fluoride / calcium (LiF / Ca), and lithium fluoride / aluminum (LiF / Al). The reflective component RM may have a single-layer structure or a multi-layer structure.

[0179] exist Figure 16 In this process, the encapsulation layer TFE can cover the light-emitting element layer EML. For example, the encapsulation layer TFE can cover the upper and side surfaces of the reflective component RM and a portion of the thin-film transistor layer TFTL. For example, the encapsulation layer TFE may include at least one inorganic film to prevent oxygen or moisture penetration. Furthermore, the encapsulation layer TFE may include at least one organic film to protect the display device 10 from foreign matter such as dust.

[0180] The first contact hole CNT1 can be patterned using a mask MSK disposed on the package layer TFE. For example, the material constituting the mask MSK can be disposed on the package layer TFE and then patterned using a wet etching process. Furthermore, a portion of the package layer TFE, the third planarization layer OC3, and the second protective layer PAS2 can be patterned using a dry etching process. The mask MSK can be removed after the first contact hole CNT1 is formed. The formation process of the first contact hole CNT1 is not limited to wet etching or dry etching.

[0181] exist Figure 17 In this process, the pad portion PD can be arranged on the edge of the encapsulation layer TFE. The pad portion PD can be connected to the connection wiring CWL of the thin film transistor layer TFTL through the first contact hole CNT1 that passes through the encapsulation layer TFE, the third planarization layer OC3, and the second protective layer PAS2.

[0182] The pad PD can be arranged behind the display device 10. For example, light emitted from the light-emitting element layer EML can be reflected by the reflective component RM, thereby passing through the thin-film transistor layer TFTL, wavelength conversion layer WLCL, color filter layer CFL, and substrate SUB and emitting towards the front of the display device 10. The pad PD can be arranged behind the display device 10 to minimize the area of ​​the non-display area NDA of the display device 10. For example, the pad PD can be arranged in the light-shielding area BA of the display area DA or the non-display area NDA. The pad PD can overlap with the first light-shielding component BK1 and the second light-shielding component BK2. Therefore, the tile-type display device TD can prevent the user from identifying the non-display area NDA or boundary portion between the multiple display devices 10 by minimizing the spacing between them.

[0183] The metal layer HRL can be disposed on the TFE layer in an area other than the area where the pad PD is disposed. The metal layer HRL can be separated from and insulated from the pad PD. The metal layer HRL can dissipate heat generated inside the display device 10 to the outside. The thermal conductivity of the metal layer HRL can be higher than that of the TFE layer. In cases where heat generated from the light-emitting element layer EML or the thin-film transistor layer TFTL is transferred through the TFE layer, the metal layer HRL can dissipate heat to the outside of the display device 10.

[0184] The pad PD and the metal layer HRL can be constructed using the same material in the same layer. The pad PD and the metal layer HRL can be fabricated by patterning the material constituting the pad PD and the metal layer HRL after coating the encapsulation layer TFE. Therefore, the display device 10 can reduce process steps and processing time, and lower manufacturing costs.

[0185] exist Figure 18 In this configuration, the flexible film 210 can be disposed on the pad PD. One side of the flexible film 210 can be connected to the pad PD, and the other side of the flexible film 210 can be connected to the source circuit board (not shown). The flexible film 210 can transmit signals from the source drive unit 220 to the display device 10. For example, the source drive unit 220 can be an integrated circuit (IC). The source drive unit 220 can convert digital video data into analog data voltage based on the source control signal of the timing control unit and supply it to the data line of the display area DA through the flexible film 210.

[0186] The protective film PF can be applied to the metal layer HRL. The protective film PF can cover the metal layer HRL, thereby preventing damage to the metal layer HRL.

[0187] In this way, the area of ​​the non-display area NDA of the display device 10 can be minimized by arranging the pad portion PD of each of the plurality of display devices 10 behind the display device 10. For example, the pad portion PD can be arranged in the light-shielding area BA of the display area DA or the non-display area NDA. The pad portion PD can overlap with the first light-shielding member BK1 and the second light-shielding member BK2. Therefore, the tile-type display device TD can minimize the spacing between the plurality of display devices 10, thereby preventing the user from identifying the non-display area NDA or boundary portions between the plurality of display devices 10.

[0188] While embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will understand that other specific forms can be implemented without altering the technical concept or essential features of the invention. Therefore, the embodiments described above should be understood as exemplary in all respects, and not as limiting.

Claims

1. A display device, comprising: The substrate includes multiple light-emitting areas and multiple light-shielding areas, wherein the multiple light-shielding areas respectively surround the multiple light-emitting areas; A thin-film transistor layer includes thin-film transistors and interconnect wiring, wherein the thin-film transistors are disposed on the substrate and the interconnect wiring is connected to the thin-film transistors; A light-emitting element layer is disposed on the thin-film transistor layer and includes a plurality of light-emitting elements corresponding to the plurality of light-emitting regions respectively; An encapsulation layer that covers the light-emitting element layer; as well as A pad is disposed on the encapsulation layer and contacts the connection wiring through contact holes disposed on the encapsulation layer. The pad or the connecting wire overlaps with the light-shielding components on the plurality of light-shielding areas.

2. The display device as claimed in claim 1, wherein, The thin-film transistor layer further includes: a connecting electrode, disposed on the thin-film transistor and connecting the first electrode of the thin-film transistor and the light-emitting element. The connecting wiring and the connecting electrode are arranged on the same layer.

3. The display device as claimed in claim 1, wherein, The connection wiring is arranged on the same layer as the gate electrode of the thin-film transistor.

4. The display device as claimed in claim 1, wherein, Also includes: The color filter layer includes multiple light-shielding components and multiple color filters. The plurality of light-shielding components include a first light-shielding component and a second light-shielding component that overlap each other in the thickness direction.

5. The display device as claimed in claim 1, wherein, Also includes: A metal layer is disposed on the encapsulation layer and spaced apart from the pad portion.

6. The display device as claimed in claim 5, wherein, The metal layer is made of the same material as the pad portion.

7. The display device as claimed in claim 6, wherein, Also includes: A protective film covers the metal layer; as well as A flexible membrane is disposed on the pad portion and connected to the pad portion.

8. The display device as claimed in claim 1, wherein, Each of the plurality of light-emitting elements includes: A first electrode is disposed on the thin-film transistor layer and connected to the thin-film transistor; A second electrode is disposed on the thin-film transistor layer, spaced apart from the first electrode; and A light-emitting diode is arranged between the first electrode and the second electrode, spaced apart from the first electrode and the second electrode.

9. The display device as claimed in claim 8, wherein, The light-emitting element layer further includes: A first contact electrode covers one end of the light-emitting diode and the first electrode, thereby connecting the light-emitting diode and the first electrode; and The second contact electrode covers the other end of the light-emitting diode and the second electrode, thereby connecting the light-emitting diode and the second electrode.

10. The display device as claimed in claim 9, wherein, The light-emitting element layer further includes: A protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode; and A reflective component covers the protective layer and reflects the light emitted by the light-emitting diode toward the substrate. The reflective components of each of the plurality of light-emitting regions are spaced apart from each other.

11. The display device as claimed in claim 10, wherein, The encapsulation layer covers the upper and side surfaces of the reflective component and a portion of the thin-film transistor layer.

12. The display device as claimed in claim 9, wherein, The light-emitting element layer further includes: A protective layer covering the light-emitting element, the first contact electrode, and the second contact electrode; and A reflective component covers the protective layer and the thin-film transistor layer, and reflects the light emitted by the light-emitting diode toward the substrate.

13. A tile-type display device, comprising: A plurality of display devices, each of the plurality of display devices including a display area and a non-display area, the display area being equipped with a plurality of pixels, and the non-display area surrounding the display area; as well as Combined components, combined with the multiple display devices, Each of the plurality of display devices is a display device according to any one of claims 1 to 3 and 5 to 12. The multiple light-emitting areas included in the substrate correspond to a portion of the display area, and the multiple light-shielding areas included in the substrate correspond to another portion of the display area.

14. The tile-type display device as claimed in claim 13, wherein, The pad or the connecting wiring overlaps with the non-display area or the multiple light-shielding areas.

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