Display device and repairing method thereof

Abstract

Display device and repairing method thereof. A display device is disclosed, including: a substrate, a sub-pixel including a transmissive portion and a light emitting portion is disposed on the substrate; a transistor disposed on the substrate; and an organic light emitting diode connected to the transistor. The transmissive portion includes a repairing portion in which an anode electrode of the organic light emitting diode is connected to an extension line extending from an electrode of the transistor through a contact hole.

Description

Technical Field

[0001] This disclosure relates to a display device, and more specifically, to a display device and a method thereof capable of improving aperture ratio and performing pixel repair. Background Technology

[0002] With the development of the information society, the demand for display devices for displaying images is increasing in various forms. Display devices have rapidly evolved into flat panel displays (FPDs), which are thin, lightweight, and can have a large area, replacing bulky cathode ray tubes (CRTs). FPD devices include liquid crystal displays (LCDs), plasma display panels (PDPs), organic light-emitting diode (OLED) displays, and electrophoretic displays (EDs), among others.

[0003] Among them, OLED devices are self-emissive elements that emit light themselves, have a fast response speed, and offer significant advantages in luminous efficiency, brightness, and viewing angle. In particular, OLED devices can even be formed on flexible substrates, can be driven at lower voltages than plasma display panels or inorganic electroluminescent displays, have relatively low power consumption, and offer excellent color performance.

[0004] Recently, a transparent display device has been developed, allowing visibility from its front to its back. This transparent display device, for example, is implemented using a transparent organic light-emitting display device consisting of a light-emitting portion that emits light from each pixel region and a transmissive portion that transmits external light through it. Because pixel regions exhibit a trade-off between a larger light-emitting portion and a smaller transmissive portion, it is difficult to increase the aperture ratio of the light-emitting portion. Therefore, research is underway to increase the aperture ratio of the light-emitting portion without reducing the transmissive portion in the transparent display device. Summary of the Invention

[0005] Technical issues

[0006] This disclosure provides a display device and a repair method thereof that can prevent the loss of the transmissive portion to the greatest extent and perform pixel repair.

[0007] Technical solution

[0008] A display device according to one embodiment may include a substrate on which sub-pixels, including transmissive portions and light-emitting portions, are disposed; a transistor disposed on the substrate; and an organic light-emitting diode connected to the transistor. The transmissive portion may include a repair portion in which the anode electrode of the organic light-emitting diode is connected through a contact hole to an extension line extending from the electrode of the transistor.

[0009] The anode electrode may include a first anode electrode disposed at the first light-emitting portion and having a first extension portion extending to the repair portion; and a second anode electrode disposed at the second light-emitting portion and having a second extension portion extending to the repair portion. The first extension portion may be connected to the extension line via a first contact hole, and the second extension portion may be connected to the extension line via a second contact hole.

[0010] When the second light-emitting portion is defective, the second anode electrode can be cut inside the second contact hole or in the second extension portion to separate it from the extension line.

[0011] The anode electrode may include a first anode electrode disposed in the first light-emitting portion and a second anode electrode disposed in the second light-emitting portion. The first anode electrode and the second anode electrode may extend into the repair portion and be connected to each other within the repair portion.

[0012] The extension line may include an exposed portion formed on one side of the anode electrode adjacent to the repair portion and not overlapping with the anode electrode.

[0013] The display device may further include: a partition wall formed on the side of the anode electrode adjacent to the exposed portion and having an inverted conical side surface; an organic light-emitting layer covering the anode electrode and the partition wall; and a cathode electrode formed on the light-emitting layer.

[0014] One side of the anode electrode may not be covered by the cathode electrode and the light-emitting layer surrounding the partition wall.

[0015] The passivation layer and the outer coating can be inserted between one side of the anode electrode and the extension line.

[0016] A passivation layer can be inserted only on one side of the anode electrode and between the extension line.

[0017] The exposed portion may be a portion that protrudes from a part of the side of the extension line that overlaps with the first anode electrode toward the outside of the first anode electrode.

[0018] When the first or second light-emitting part is defective, the exposed part can be connected to one side of the first anode electrode.

[0019] The display device may further include a passivation layer covering the extension line within the repaired portion; and an outer coating layer formed on the passivation layer and having an opening in a region exposing the passivation layer. A first anode electrode may be disposed on the outer coating layer such that at least one region thereof overlaps with the opening and the extension line.

[0020] When the first or second light-emitting part is defective, the passivation layer can be removed inside the opening, and the extension line and the first anode electrode can be connected to each other.

[0021] The repair method for the display device according to the embodiment may include: a cutting step of disconnecting the connection between the second anode electrode and the extension line in the repair section when the second light-emitting portion is defective; and a welding step of connecting the first anode electrode and the extension line in the repair section.

[0022] The cutting step may include irradiating the second contact hole or the second extension with a laser beam.

[0023] The welding process may include irradiating the exposed portion with a laser beam.

[0024] The welding process may include irradiating a laser beam onto a first anode electrode within the opening.

[0025] The passivation layer can be removed using a laser beam, and the first anode electrode can be connected to an extension line.

[0026] Technical effect

[0027] An organic light-emitting display device according to an embodiment of the present disclosure has a first repair portion and a second repair portion, thereby enabling the repair of the organic light-emitting display device to be performed when a fault or defect of a sub-pixel is detected.

[0028] Furthermore, the organic light-emitting display device according to embodiments of the present disclosure improves the aperture ratio by forming a contact portion between a first electrode and the driving transistor via an extension line extending from an electrode (e.g., the source) of a driving transistor, said electrode being the upper electrode of a capacitor.

[0029] In the organic light-emitting display device according to the present disclosure, the anode contact portion of the organic light-emitting diode is formed in the transmissive portion rather than in the light-emitting portion, thereby improving the aperture ratio. Attached Figure Description

[0030] Figure 1 This is a schematic block diagram of an organic light-emitting display device;

[0031] Figure 2 This is a schematic circuit diagram of a sub-pixel;

[0032] Figure 3 This is an example circuit diagram of a sub-pixel;

[0033] Figure 4 This is a top view of an organic light-emitting display device according to an embodiment of the present disclosure;

[0034] Figure 5 It is along Figure 4A cross-sectional view taken from line I-I';

[0035] Figure 6 It is along Figure 4 A cross-sectional view taken from line II-II';

[0036] Figure 7 This is an enlarged view of the repaired portion according to the first embodiment.

[0037] Figure 8 It is along Figure 7 A cross-sectional view taken from line III-III';

[0038] Figure 9 This is an enlarged view of the repair portion according to the second embodiment.

[0039] Figure 10 It is along Figure 9 A cross-sectional view taken from line IV-IV';

[0040] Figure 11 It is a description used for Figure 10 A cross-sectional view of the laser cutting method for pixel restoration in the organic light-emitting display device shown;

[0041] Figure 12 This is an enlarged view of the repair portion according to the third embodiment.

[0042] Figure 13 It shows along Figure 12 Implementation method of cross-sectional view taken by line V-V';

[0043] Figure 14 It is a description used for Figure 13 A cross-sectional view of the laser welding method for pixel repair in the organic light-emitting display device shown.

[0044] Figure 15 It shows along Figure 12 Another implementation of the cross-sectional view taken by line V-V';

[0045] Figure 16 It is a description used for Figure 15 A cross-sectional view of the laser welding method for pixel repair in the organic light-emitting display device shown.

[0046] Figure 17 This is an enlarged view of the repair portion according to the fourth embodiment.

[0047] Figure 18 It shows along Figure 17 Another embodiment of the cross-sectional view taken by line VI-VI'; and

[0048] Figure 19 It is a description used for Figure 18A cross-sectional view of the laser welding method for pixel repair in the organic light-emitting display device shown.

[0049] Figure Labels

[0050] PL1: First power line; PL2: Second cathode power line

[0051] SL: Sensor cable DL1~DL4: First to fourth data cables

[0052] GL: Gate line; ST: Sensing transistor

[0053] DR: Driver transistor; SW: Switching transistor

[0054] CST: Capacitor; ANO: Anode electrode

[0055] ANO1: First anode electrode; ANO2: Second anode electrode

[0056] RP: Repair section; CAC: Cathode contact section

[0057] EMA1: First luminous part; EMA2: Second luminous part Detailed Implementation

[0058] In the following description, one or more embodiments of this disclosure will be described with reference to the accompanying drawings. Throughout the disclosure, the same reference numerals denote substantially the same components. In the following description, detailed descriptions of known functions and configurations incorporated in connection with this disclosure are omitted where such descriptions might make the subject matter of the disclosure very unclear. Furthermore, the component names used in the following description may have been chosen to facilitate the writing of the specification and may differ from the component names of the actual product.

[0059] Organic light-emitting display devices, liquid crystal displays, electrophoretic displays, and the like can be used as display devices according to embodiments of this disclosure. In this disclosure, an organic light-emitting display device will be described as an example. An organic light-emitting display device includes a light-emitting layer composed of organic matter between a first electrode serving as an anode and a second electrode serving as a cathode. Therefore, electrons provided from the first electrode and holes provided from the second electrode combine within the light-emitting layer, forming excitons as electron-hole pairs. The organic light-emitting display device is a self-emissive display device that emits light through the energy generated when excitons return to their ground state.

[0060] Figure 1 This is a schematic block diagram of an organic light-emitting display device.

[0061] Reference Figure 1 The organic light-emitting display device includes an image processing unit 110, a timing controller 120, a data driver 130, a scan driver 140, and a display panel 150.

[0062] The image processing unit 110 outputs a data enable signal DE and image data DATA provided from an external source. The image data DATA may include multiple grayscale data. In addition to the data enable signal DE, the image processing unit 110 may also output horizontal synchronization signals, vertical synchronization signals, and clock signals as control signals.

[0063] The timing controller 120 receives image data DATA from the image processing unit 110. Additionally, the timing controller 120 receives control signals, including a data enable signal DE, from the image processing unit 110. The timing controller 120 processes the image data DATA and the control signals to suit the operating conditions of the display panel 150, and then outputs the image data DATA, a gate timing control signal GDC for controlling the operating timing of the scan driver 140, and a data timing control signal DDC for controlling the operating timing of the data driver 130.

[0064] Data driver 130 generates a data signal from image data DATA in response to a data timing control signal DDC provided from timing controller 120. Data driver 130 can output the data signal generated via data lines DL1 to DLn.

[0065] In various implementations, the data driver 130 may also be connected to the sub-pixel SP of the display panel 150 via multiple sensing lines (or reference lines). The data driver 130 may provide a reference voltage (or sensing voltage, initialization voltage) to the sub-pixel SP via the multiple sensing lines, or it may sense the state of the sub-pixel SP based on electrical signals fed back from the sub-pixel SP.

[0066] The scan driver 140 generates a scan signal in response to the gate timing control signal GDC provided from the timing controller 120. The scan driver 140 outputs the scan signal through gate lines GL1 to GLm.

[0067] Display panel 150 displays an image in response to data signals and scan signals provided from data driver 130 and scan driver 140. Display panel 150 includes subpixels SP for displaying the image. The subpixels SP may be arranged, for example, in a matrix at display panel 150. Depending on their light-emitting characteristics, the subpixels SP may have the same or different light-emitting areas.

[0068] Each subpixel SP can display any of the first to third colors. In this embodiment, each subpixel SP can display any of red, green, and blue. In another embodiment, each subpixel SP can display any of cyan, magenta, and yellow.

[0069] Alternatively, each subpixel SP can display any of the first to fourth colors. In this embodiment, each subpixel SP can display any of red, green, blue, and white.

[0070] The timing controller 120, the data driver 130, and the scan driver 140 can each be composed of individual integrated circuits (ICs), or can be composed of integrated circuits in which at least some of them are integrated. For example, the data driver 130 can be composed of an integrated circuit integrated with the timing controller 120.

[0071] In addition, Figure 1 In this design, the data driver 130 and the scan driver 140 are shown as components separate from the display panel 150. However, at least one of the data driver 130 and the scan driver 140 can be configured in an in-panel manner, integrally formed with the display panel 150. For example, the scan driver 140 can be integrally formed with the display panel 150 according to a gate-in-panel (GIP) method.

[0072] Figure 2 This is a schematic circuit diagram of a sub-pixel. Figure 3 This is an example circuit diagram for a sub-pixel. Figure 2 As an example, a sub-pixel SP connected to the first gate line GL1 and the first data line DL1 is shown.

[0073] refer to Figure 2 Subpixels SP may include switching transistors SW, driving transistors DR, capacitors Cst, compensation circuits CC, and organic light-emitting diodes OLED.

[0074] The first electrode (e.g., drain) of the switching transistor SW is electrically connected to the data line DL1, and the second electrode (e.g., source) is electrically connected to the first node N1. The gate of the switching transistor SW is electrically connected to the gate line GL1. In response to a scan signal provided through the gate line GL1, the switching transistor SW transmits a data signal provided through the data line DL1 to the first node N1.

[0075] The capacitor Cst is electrically connected to the first node N1 to charge the voltage applied to the first node N1.

[0076] The first electrode (e.g., drain) of the driving transistor DR receives a high-potential driving voltage EVDD, and the second electrode (e.g., source) is electrically connected to the first electrode (e.g., anode) of the organic light-emitting diode (OLED). The driving transistor DR can control the amount of driving current flowing through the OLED in response to the voltage applied to the gate electrode.

[0077] Organic light-emitting diodes (OLEDs) output light corresponding to the driving current. OLEDs can output light corresponding to any of the three colors: red, green, and blue.

[0078] A compensation circuit CC can be provided within the sub-pixel SP to compensate for factors such as the threshold voltage of the driving transistor DR. The compensation circuit CC can consist of one or more transistors. The compensation circuit CC can be configured differently depending on the compensation method used for the sub-pixel SP.

[0079] refer to Figure 3 In this embodiment, the sensing transistor ST can be included in the compensation circuit CC.

[0080] In this embodiment, the first electrode of the switching transistor SW is electrically connected to the data line DL1, and the second electrode is electrically connected to the gate electrode of the driving transistor DR. The gate of the switching transistor SW is electrically connected to the first gate line GL1-1.

[0081] The first electrode of capacitor Cst is electrically connected to the gate electrode of driving transistor DR, and the second electrode is electrically connected to the first electrode of organic light-emitting diode OLED.

[0082] The first electrode of the driving transistor DR receives a high-potential driving voltage EVDD, and the second electrode is electrically connected to the first electrode (e.g., the anode electrode) of the organic light-emitting diode OLED. The gate electrode of the driving transistor DR is electrically connected to the second electrode of the switching transistor SW.

[0083] The first electrode (e.g., drain) of the sensing transistor ST receives a reference voltage (or a sensing voltage VREF), and the second electrode (e.g., source) is electrically connected to the second electrode of the driving transistor DR. The gate electrode of the sensing transistor ST is connected to the first-second gate line GL1-2. In response to a scan signal applied to the first-second gate line GL1-2, the sensing transistor ST can provide the sensing voltage VREF to the driving transistor DR, or it can transmit a voltage or current including the electrical characteristics of the driving transistor DR to the data driver 130.

[0084] Depending on the compensation algorithm (or the configuration of the compensation circuit), the operating time of the sensing transistor ST can be similar to, the same as, or different from the operating time of the switching transistor SW. In the illustrated embodiment, a first scan signal Scan1 can be applied to gate line GL1-1, and a second scan signal Scan2 can be applied to gate line GL1-2. In another embodiment, the gates of the switching transistor SW and the sensing transistor ST can be connected to a common gate line.

[0085] The data driver 130 can sense the characteristics of the sub-pixel SP based on the voltage or current transmitted through the sensing transistor ST. The data driver 130 can perform real-time sensing during non-display periods of the image or over N frames (N is an integer greater than or equal to 1). In this embodiment, when the switching transistor SW and the sensing transistor ST are simultaneously turned on, the data driver 130 can separate (divide) the sensing operation and output operation of the data signal in a time-division manner.

[0086] The compensation target based on the sensing results may include digital data signals, analog data signals, and gamma signals, etc. The compensation circuit for generating a compensation signal (or compensation voltage) based on the sensing results may be implemented within the data driver 130, within the timing controller 120, or as a separate circuit.

[0087] exist Figure 3 The present invention describes a 3T (transistor) 1C (capacitor) structure as an example, wherein the sub-pixel SP includes a switching transistor SW, a driving transistor DR, a capacitor Cst, an organic light-emitting diode OLED, and a sensing transistor ST. However, the spirit of the present disclosure is not limited thereto, and the sub-pixel SP can have various structures, such as 3T2C, 4T2C, 5T1C, 6T2C, etc.

[0088] In addition, although Figure 2 and Figure 3 The illustration shows an example of an NMOS transistor, but this embodiment is not limited to this. For example, some or all of the transistors constituting each sub-pixel SP may be formed by PMOS transistors. In various embodiments, some or all of the transistors may be implemented using low-temperature polycrystalline silicon (LTPS) thin-film transistors, oxide thin-film transistors, or low-temperature polycrystalline oxide (LTPO) thin-film transistors.

[0089] Figure 4 This is a top view of an organic light-emitting display device according to an embodiment of the present disclosure. Figure 5 It is along Figure 4 The cross-sectional view taken from line I-I'. Figure 6 It is along Figure 4 The cross-sectional view taken from line II-II'.

[0090] Reference Figure 4 The organic light-emitting display device disclosed herein includes first to fourth sub-pixels SPn1 to SPn4, wherein gate line GL and first to fourth data lines DL1 to DL4 are defined in an overlapping region. Each of the first to fourth sub-pixels SPn1 to SPn4 includes a first light-emitting portion EMA1 and a second light-emitting portion EMA2, and a transmissive portion TA as the remaining area excluding the first light-emitting portion EMA1 and the second light-emitting portion EMA2.

[0091] Gate line GL is connected to the sensing transistor ST and the switching transistor SW of the first to fourth sub-pixels SPn1 to SPn4.

[0092] The first to fourth sub-pixels SPn1 to SPn4 are collectively connected to the sensing line SL, to which the sensing voltage VREF is applied. The sensing line SL is connected to the sensing transistor ST of the first to fourth sub-pixels SPn1 to SPn4 via the first sensing connection line SC1 and the second sensing connection line SC2. For example, the sensing line SL can be connected to the first sub-pixel SPn1 and the third sub-pixel SPn3 via the first sensing connection line SC1, and can be connected to the second sub-pixel SPn2 and the fourth sub-pixel SPn4 via the second sensing connection line SC2.

[0093] A first power line PL1, to which a high-potential driving voltage EVDD is applied, is located on the side of the first sub-pixel SPn1 and the second sub-pixel SPn2. The first to fourth sub-pixels SPn1 to SPn4 are respectively connected to the first power line PL1 via power connection lines EVC. For example, the first power line PL1 is connected to the power connection line EVC, and the power connection line EVC is connected to the driving transistors DR of the first to fourth sub-pixels SPn1 to SPn4.

[0094] A second power line PL2, which applies a low-potential driving voltage EVSS, is positioned on the third and fourth sub-pixels SPn3 and SPn4 sides. The second power line PL2 is connected to the second electrode (e.g., the cathode electrode) of the organic light-emitting diode (OLED).

[0095] Each of the first to fourth sub-pixels SPn1 to SPn4 includes a driving transistor DR, a capacitor Cst, a sensing transistor ST, and a switching transistor SW.

[0096] Each of the first to fourth sub-pixels SPn1 to SPn4 includes a first light-emitting portion EMA1 and a second light-emitting portion EMA2. In this embodiment, a portion of the first light-emitting portion EMA1 may be configured to overlap with the driving transistor DR, and a portion of the second light-emitting portion EMA2 may be configured to overlap with the sensing transistor ST and the switching transistor SW.

[0097] A first anode electrode ANO1 is disposed in a first light-emitting portion EMA1 provided in each of the first to fourth sub-pixels SPn1 to SPn4, and a second anode electrode ANO2 is disposed in a second light-emitting portion EMA2. The first anode electrode ANO1 and the second anode electrode ANO2 together or independently form the anode electrode ANO of the organic light-emitting diode (OLED). Figure 4 In one embodiment, the first anode electrode ANO1 and the second anode electrode ANO2 are electrically connected to form the anode electrode ANO of the organic light-emitting diode (OLED).

[0098] The anode electrode ANO is connected to the second electrode (e.g., the source electrode) of the driving transistor DR through a contact hole CH. In this embodiment, the contact hole CH is formed in the region where the first anode electrode ANO1 and the second anode electrode ANO2 branch. The anode electrode ANO can be connected to the second electrode of the driving transistor DR through the contact hole. As shown, the anode electrode ANO can be directly connected to the second electrode of the driving transistor DR, or it can be connected to the second electrode of the driving transistor DR via one electrode of the capacitor Cst.

[0099] The regions where the first anode electrode ANO1 and the second anode electrode ANO2 branch are located are situated within the repair portion RP provided in the transmission portion TA. In this embodiment, a contact hole CH is disposed within the repair portion RP. When either the first light-emitting portion EMA1 or the second light-emitting portion EMA2 fails due to foreign matter that may occur during processing, a disconnect may occur between the anode electrode of the failed light-emitting portion and the contact hole within the repair portion RP. Then, the driving current is not applied from the driving transistor DR to the anode electrode of the failed light-emitting portion, and the failed light-emitting portion does not emit light. Thus, the sub-pixel SP can be repaired by disconnecting the defective anode electrode from the driving transistor DR.

[0100] In the following text, reference will be made to Figure 5 and Figure 6 Describe the detailed stack-up structure of the organic light-emitting display device.

[0101] Substrate 110 is the base substrate of display panel 150 and may be a light-transmitting substrate. Substrate 110 may be a rigid substrate including glass or tempered glass, or it may be a flexible substrate made of plastic. For example, substrate 110 may be formed of plastic materials such as polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polycarbonate (PC). However, the material of substrate 110 is not limited to these.

[0102] A first conductive layer may be disposed on the substrate 110. The first conductive layer may include a light-blocking layer 120. The light-blocking layer 120 blocks external light from entering and prevents photocurrent from being generated in the thin-film transistor. The first conductive layer may also include data lines DL1 to DL4, power lines PL1 and PL2, sensing lines SL, etc.

[0103] The buffer layer 125 at least partially covers the first conductive layer. The buffer layer 125 prevents the diffusion of ions or impurities from the substrate 110 and blocks moisture penetration. Furthermore, the buffer layer 125 improves the surface flatness of the substrate 110. The buffer layer 125 may comprise inorganic materials, such as oxides and nitrides, organic materials, or organic-inorganic composites, and may be formed as a single layer or multiple layers. For example, the buffer layer 125 may have a structure consisting of three or more layers of silicon oxide, silicon nitride, and silicon oxide.

[0104] A semiconductor layer 130 is formed at the buffer layer 125. The semiconductor layer 130 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material. Amorphous silicon or polycrystalline silicon may be used as the silicon-based semiconductor material. The oxide-based semiconductor material may include: indium tin gallium zinc oxide (InSnGaZnO) as a quaternary metal oxide, indium gallium zinc oxide (InGaZnO), indium tin zinc oxide (InSnZnO), indium aluminum zinc oxide (InAlZnO), tin gallium zinc oxide (SnGaZnO), aluminum gallium zinc oxide (AlGaZnO), tin aluminum zinc oxide (SnAlZnO) as a ternary metal oxide, indium zinc oxide (InZnO), tin zinc oxide (SnZnO), aluminum zinc oxide (AlZnO), zinc magnesium oxide (ZnMgO), tin magnesium oxide (SnMgO), indium magnesium oxide (InMgO), indium gallium oxide (InGaO), indium oxide (InO), tin oxide (SnO), zinc oxide (ZnO), etc.

[0105] The semiconductor layer 130 may include a source region and a drain region containing p-type or n-type impurities, and may include a channel formed between the source region and the drain region, respectively.

[0106] The lower electrode LCst of the capacitor is further disposed at the buffer layer 125. The lower electrode LCst can be formed of the same material as the semiconductor layer 130. In this embodiment, the lower electrode LCst can be an extension of the semiconductor layer 130. In this embodiment, the lower electrode LCst is integrally formed with the semiconductor layer 130 and forms a pattern.

[0107] A second conductive layer is disposed at the semiconductor layer 130. A gate insulating layer 135 is interposed between the semiconductor layer 130 and the second conductive layer. The gate insulating layer 135 may be silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof.

[0108] The second conductive layer includes a gate electrode 140. A portion of the gate electrode 140 is configured to overlap with the channel of the semiconductor layer 130. In this embodiment, the gate electrode 140 may be integrally formed with a wire electrically connected to the corresponding gate electrode 140, and may be patterned.

[0109] The second conductive layer is formed from any one of the elements selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or from an alloy thereof. The second conductive layer can be formed from any one of the elements selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or it can be a multilayer made of an alloy thereof. For example, the second conductive layer can be a molybdenum / aluminum-neodymium or molybdenum / aluminum bilayer.

[0110] The interlayer insulating layer 145 at least partially covers the second conductive layer. The interlayer insulating layer 145 may be a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, or multiple thereof.

[0111] A third conductive layer is disposed at the interlayer insulating layer 145. The third conductive layer may include a drain electrode 150a and a source electrode 150b. The drain electrode 150a and the source electrode 150b are connected to the semiconductor layer 130 through contact holes that expose the drain and source regions of the semiconductor layer 130, respectively. The semiconductor layer 130, gate electrode 140, drain electrode 150a, and source electrode 150b can form a transistor. The driving transistor DR is... Figure 5 and Figure 6 The example is shown below.

[0112] The third conductive layer also includes an upper electrode for the capacitor. The upper electrode for the capacitor is integrally formed with the source electrode 150b of the driving transistor DR and forms a pattern. That is, the source electrode 150b is arranged such that a region of the source electrode 150b overlaps with the lower electrode LCst of the capacitor and serves as the upper electrode for the capacitor.

[0113] The third conductive layer may further include an extension line SEL. The extension line SEL may consist of a portion extending substantially perpendicular to the first power line PL1 in the region of the capacitor's upper electrode. Such an extension line SEL intersects the data line DL1 and also intersects between the first light-emitting portion EMA1 and the second light-emitting portion EMA2. The extension line SEL extends from the region of the capacitor's upper electrode to the repair portion RP and is connected via a contact hole CH to the following anode electrodes ANO (more specifically, the first anode electrode ANO1 and the second anode electrode ANO2).

[0114] The third conductive layer can be formed as a single layer or multiple layers. When the third conductive layer is a single layer, it can be composed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. When the third conductive layer is composed of multiple layers, it can be formed as a bilayer of molybdenum / aluminum-neodymium, a titanium / aluminum / titanium, a molybdenum / aluminum / molybdenum, or a trilayer of molybdenum / aluminum-neodymium / molybdenum.

[0115] Passivation layer 160 at least partially covers the third conductive layer. Passivation layer 160 is an insulating layer for protecting the underlying device and may be a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, or multiple thereof. A contact hole CH exposing a portion of the extension line SEL is formed in passivation layer 160.

[0116] An outer coating 165 is disposed at the passivation layer 160. The outer coating 165 may be a planarization layer used to reduce height differences in the underlying structure, and may be composed of organic materials such as polyimide, benzocyclobutene resin, acrylate, etc. The outer coating 165 may be formed by a spin-coating glass (SOG) method, in which organic materials are coated in a liquefied form and then cured.

[0117] In the illustrated embodiment, the outer coating 165 is not formed at the contact hole CH, but rather the contact hole CH is exposed on top. However, this embodiment is not limited to this, and the outer coating 165 may be formed at the contact hole CH. In this embodiment, the contact hole CH may be formed to pass through both the outer coating 165 and the passivation layer 160.

[0118] An organic light-emitting diode (OLED) is disposed on a substrate 110, including circuit elements for driving a transistor (DR) disposed on the substrate 110. The OLED includes an anode electrode (ANO), a light-emitting material layer (EML), and a cathode electrode (CAT).

[0119] One of the anode electrode (ANO) and the cathode electrode (CAT) can be a transmitting electrode, and the other can be a reflecting electrode. For example, when an OLED has a bottom-emitting type, the anode electrode (ANO) can be a transmitting electrode, and the cathode electrode (CAT) can be a reflecting electrode. Conversely, when an OLED has a top-emitting type, the anode electrode (ANO) can be a reflecting electrode, and the cathode electrode (CAT) can be a transmitting electrode. In another example, when an OLED has a double-sided emission type, both the anode electrode (ANO) and the cathode electrode (CAT) can be transmitting electrodes. The detailed structure of an OLED will be described below using the case of a double-sided emission type as an example.

[0120] The anode electrode ANO can be formed on the outer coating 165 and / or the passivation layer 160 where the outer coating 165 is not formed. For example, the anode electrode ANO can be formed on the passivation layer 160 within the repair portion RP, and can also be formed on the outer coating 165 in the remaining areas excluding the repair portion RP. However, this embodiment is not limited to this. That is, when the outer coating 165 is formed in at least one area of ​​the repair portion RP, at least a portion of the anode electrode ANO can be formed on the outer coating 165 within the repair portion RP.

[0121] The anode electrode ANO can be made of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). When the anode electrode ANO is a reflective electrode, it may also include a reflective layer. The reflective layer can be made of aluminum (Al), copper (Cu), silver (Ag), nickel (Ni), or alloys thereof. In this embodiment, the reflective layer may be made of APC (silver / palladium / copper alloy).

[0122] The anode electrode ANO is connected to the extension line SEL through the passivation layer 160 or through the contact hole CH passing through the passivation layer 160 and the outer coating 165. The anode electrode ANO is also connected to the second electrode of the driving transistor DR and the upper electrode of the capacitor via the extension line SEL. Thus, when the anode electrode ANO is connected to the second electrode of the driving transistor DR and the upper electrode of the capacitor via the extension line SEL, the contact area is reduced compared to the case where the anode electrode is directly connected to the second electrode of the driving transistor DR or the upper electrode of a large-area capacitor. Therefore, in this embodiment, the area of ​​the light-emitting portions EMA1 and EMA2 can be further increased, and the area of ​​the transmissive portion TA can be prevented from decreasing through the contact hole CH.

[0123] A dam layer 180 dividing the sub-pixels SP is disposed on the substrate 110 including the anode electrode ANO. The dam layer 180 at least partially covers the edge of the anode electrode ANO and exposes the central region of the anode electrode ANO. The central regions exposed but not covered by the dam layer 180 are defined as light-emitting portions EMA1 and EMA2. The dam layer 180 is made of an organic material such as polyimide, benzocyclobutene resin, acrylate, etc.

[0124] A light-emitting material layer (EML) is formed on the exposed anode electrode (ANO) that is not covered by the diaphragm layer 180. The light-emitting material layer (EML) can have a multilayer thin film structure including the light-emitting layer. Here, the color of the light generated by the light-emitting layer can be white, red, blue, green, etc., but is not limited to these.

[0125] The light-emitting layer may include, for example, a hole transport layer (HTL), an organic light-emitting layer (OLED), and an electron transport layer (ETL). The hole transport layer facilitates the transport of holes injected from the anode electrode (ANO) to the OLED. The OLED may be formed of an organic material, including phosphorescent or fluorescent materials. The electron transport layer facilitates the transport of electrons injected from the cathode electrode (CAT) to the OLED. In addition to the hole transport layer, OLED, and electron transport layer, the light-emitting material layer (EML) may also include a hole injection layer (HIL), a hole blocking layer (HBL), an electron injection layer (EIL), and an electron blocking layer (EBL).

[0126] The light-emitting material layer (EML) can be formed as a series structure of two or more stacked layers. In this case, each stack can include a hole transport layer, an organic light-emitting layer, and an electron transport layer. When the EML can be formed as a series structure of two or more stacked layers, a charge generation layer can be formed between the stacks. The charge generation layer can include an n-type charge generation layer disposed adjacent to the lower stack and a p-type charge generation layer formed at the n-type charge generation layer and disposed adjacent to the upper stack. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generation layer can be an organic layer obtained by doping an organic host material with electron transport capability with an alkali metal such as lithium (Li), sodium (Na), potassium (K), or cesium (Cs) or an alkaline earth metal such as magnesium (Mg), strontium (Sr), barium (Ba), or radium (Ra). The p-type charge generation layer can be an organic layer obtained by doping an organic host material with hole transport capability with a dopant.

[0127] The cathode electrode CAT is formed at the light-emitting material layer EML. The cathode electrode CAT can be widely formed in the light-emitting portions EMA1 and EMA2 as well as in the non-light-emitting areas surrounding the light-emitting portions EMA1 and EMA2.

[0128] The cathode electrode (CAT) can be made of a transparent conductive material (TCO) or a semi-transparent conductive material such as molybdenum (Mo), tungsten (W), silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), and their alloys. When the cathode electrode (CAT) is made of a semi-transparent conductive material, the luminous efficiency can be increased due to the microcavity.

[0129] The cathode electrode CAT is connected to the second power line PL2 in the cathode contact portion CAC. Specifically, in the cathode contact portion CAC, a portion of the cathode electrode CAT is configured to overlap with the second power line PL2, and a buffer layer 125 and an interlayer insulating layer 145 are inserted between the cathode electrode CAT and the second power line PL2. The cathode electrode CAT can be connected to the second power line PL2 through a contact hole that passes through the buffer layer 125 and the interlayer insulating layer 145 and exposes the second power line PL2.

[0130] The following section will describe in more detail the repair method for sub-pixels SP by repairing a portion of RP.

[0131] Figure 7 This is an enlarged view of the repaired portion of the first embodiment. Figure 8 It is along Figure 7 The cross-sectional view taken from line III-III'. Figure 8For ease of description, components unrelated to pixel restoration have been omitted.

[0132] and Figure 4 Refer to together Figure 7 and Figure 8 In the first embodiment, the first anode electrode ANO1 has a first extension portion EXT1 extending along the X-axis from the first light-emitting portion EMA1 to the repair portion RP. Furthermore, the second anode electrode ANO2 has a second extension portion EXT2 extending along the X-axis from the second light-emitting portion EMA2 to the repair portion RP. The second extension portion EXT2 is separate from the first extension portion EXT1.

[0133] The first extension portion EXT1 and the second extension portion EXT2 are connected to each other by a connecting pattern CNT extending along a Y-axis substantially perpendicular to the X-axis. For example, one end of the connecting pattern CNT may be connected to the first extension portion EXT1, and the other end of the connecting pattern CNT may be connected to the second extension portion EXT2.

[0134] The connecting pattern CNT is configured to overlap with a portion of the extension line SEL. Within the repair portion RP, a contact hole CH is formed in the area where a portion of the connecting pattern CNT and a portion of the extension line SEL overlap. The contact hole CH is formed to pass through at least one layer inserted between the connecting pattern CNT and the extension line SEL, exposing the lower extension line SEL. For example, the contact hole CH is formed to pass through at least one of the passivation layer 160 and the outer coating layer 165. The connecting pattern CNT can be connected to the extension line SEL through the contact hole CH.

[0135] In the same or similar manner as described above, the anode electrode ANO is connected to the extension line SEL through the contact hole CH at the connection pattern CNT. Since the extension line SEL forms a pattern together with the second electrode 150b of the driving transistor DR and the upper electrode of the capacitor, the anode electrode ANO is electrically connected to the second electrode 150b of the driving transistor DR and the upper electrode of the capacitor through the extension line SEL.

[0136] In this embodiment, when foreign matter or the like permeates into the light-emitting portions EMA1 and EMA2 and the corresponding light-emitting portions do not emit light with the correct brightness, image quality degradation of the display panel 150 can be prevented by blocking the light emission of the corresponding light-emitting portions. To prevent driving current from being applied to the corresponding anode electrodes ANO1 and ANO2, the electrical connection from the driving transistor DR to the corresponding anode electrodes ANO1 and ANO2 is disconnected. Specifically, within the repair portion RP, the connecting pattern CNT and / or the extension portions EXT1 and EXT2 of the corresponding anode electrodes ANO1 and ANO2 can be laser-cut.

[0137] For example, when a fault occurs in the first light-emitting portion EMA1, a laser beam is irradiated onto the first extension portion EXT1 of the connecting pattern CNT or the first anode electrode ANO1, thereby cutting the first extension portion EXT1 or the connecting pattern CNT. When the laser beam irradiates the connecting pattern CNT, the laser beam irradiates between the contact hole CH and the end of the connecting pattern CNT connected to the first extension portion EXT1. Figure 8 An example is shown where a laser beam is irradiated on the top and / or bottom surfaces of a connected pattern CNT.

[0138] Since the second anode electrode ANO2 is electrically connected to the driving transistor DR through the contact hole CH, the second anode electrode ANO2 can work normally without being related to the laser cutting of the first anode electrode ANO1.

[0139] Figure 9 This is an enlarged view of the repair portion according to the second embodiment. Figure 10 It is along Figure 9 The cross-sectional view taken from line IV-IV'. Figure 11 It is a description used for Figure 10 A cross-sectional view of the laser cutting method for pixel restoration in the illustrated organic light-emitting display device. Figures 9 to 11 In the image, components unrelated to pixel restoration have been omitted.

[0140] Let's refer to each other. Figure 9 and Figure 10 In the second embodiment, the first anode electrode ANO1 has a first extension portion EXT1 extending along the X-axis from the first light-emitting portion EMA1 to the repair portion RP. Furthermore, the second anode electrode ANO2 has a second extension portion EXT2 extending along the X-axis from the second light-emitting portion EMA2 to the repair portion RP.

[0141] The first extension portion EXT1 and the second extension portion EXT2 are configured to overlap with the extension line SEL portion. The extension line SEL can have various patterns to overlap with both the first and second extension portions EXT1 and EXT2. For example, the extension line SEL can consist of a first extension line SEL1 that overlaps with the first extension portion EXT1 and extends along the X-axis, and a second extension line SEL2 that overlaps with the second extension portion EXT2 and extends along the X-axis. The first extension line SEL1 and the second extension line SEL2 can be extension portions branching off from one end of the extension line SEL and having a shape that bends at a right angle. However, the shape of the extension line SEL is not limited to this. For example, the first extension line SEL1 and the second extension line SEL2 can be extension portions extending from the upper electrode of the capacitor along the X-axis direction.

[0142] A first contact hole CH1 is formed in the region where a portion of the first extension portion EXT1 overlaps with a portion of the extension line SEL, and a second contact hole CH2 is formed in the region where a portion of the second extension portion EXT2 overlaps with a portion of the extension line SEL. The first contact hole CH1 and the second contact hole CH2 are formed to pass through at least one layer inserted between the extension portions EXT1 and EXT2 and the extension line SEL, exposing the lower extension line SEL. The first extension portion EXT1 and the second extension portion EXT2 can be connected to the first extension line SEL1 and the second extension line SEL2 respectively through the first contact hole CH1 and the second contact hole CH2.

[0143] As described above, the first anode electrode ANO1 and the second anode electrode ANO2 are independently connected to the extension line SEL. Because the extension line SEL forms a pattern together with the second electrode 150b of the driving transistor DR and the upper electrode of the capacitor, the first anode electrode ANO1 and the second anode electrode ANO2 are independently connected to the second electrode 150b of the driving transistor DR and the upper electrode of the capacitor via the extension line SEL.

[0144] In this embodiment, when one of the light-emitting portions EMA1 and EMA2 fails, the electrical connection from the driving transistor DR to the corresponding anode electrode is broken. Specifically, within the repair portion RP, the extension portions EXT1 and EXT2 of the corresponding anode electrodes ANO1 and ANO2 can be laser-cut. For example, contact holes CH1 and CH2 can be destroyed by irradiating them with a laser. When extension lines SEL1 and SEL2 are exposed to the transmission portion TA, the laser irradiates the extension lines SEL1 and SEL2 from below, and can cut the extension lines SEL1 and SEL2.

[0145] Reference Figure 11 In this embodiment, for laser cutting, the laser beam irradiates the contact holes CH1 and CH2 of the extension portions EXT1 and EXT2. For example, when a fault occurs in the first light-emitting portion EMA1, the laser beam irradiates the first contact hole CH1 and can cut the first extension portion EXT1 formed within the first contact hole CH1.

[0146] Alternatively, when a fault occurs in the first light-emitting portion EMA1, the laser shines on the first extension line SEL1 from below and can cut the first extension line SEL1.

[0147] For ease of description, Figure 11 An example is shown where both the first contact hole CH1 and the first extension line SEL1 are cut. However, in some embodiments, only one of the first contact hole CH1 and the first extension line SEL1 may be cut.

[0148] Since the first anode electrode ANO1 and the second anode electrode ANO2 are independently connected to the driving transistor DR, one anode electrode can work normally without being affected by the laser cutting of the other anode electrode.

[0149] Figure 12 This is an enlarged view of the repair portion according to the third embodiment. Figure 13 It shows along Figure 12 Implementation method of cross-sectional view taken by line V-V'. Figure 14 It is a description used for Figure 13 A cross-sectional view of a laser welding method for pixel restoration in an organic light-emitting display device. Figures 12 to 14 For ease of description, components unrelated to pixel restoration have been omitted. Specifically, although... Figure 13 The cathode electrode CAT and the light-emitting material layer EML on the anode electrodes ANO1 and ANO2 are shown, but for convenience, Figure 14 They are omitted from the text.

[0150] Let's refer to each other. Figure 12 and Figure 13 In the third embodiment, the first anode electrode ANO1 has a first extension portion EXT1 extending along the X-axis from the first light-emitting portion EMA1 to the repair portion RP. Furthermore, the second anode electrode ANO2 has a second extension portion EXT2 extending along the X-axis from the second light-emitting portion EMA2 to the repair portion RP. The second extension portion EXT2 is disposed separately from the first extension portion EXT1.

[0151] The first extension portion EXT1 and the second extension portion EXT2 are connected to each other by a connecting pattern CNT extending along a Y-axis substantially perpendicular to the X-axis. For example, one end of the connecting pattern CNT may be connected to the first extension portion EXT1, and the other end of the connecting pattern CNT may be connected to the second extension portion EXT2.

[0152] The first extension portion EXT1 and the second extension portion EXT2 are configured to overlap with the extension line SEL. The extension line SEL can have various patterns to overlap with both the first extension portion EXT1 and the second extension portion EXT2. For example, the extension line SEL can consist of a first extension line SEL1 that overlaps with the first extension portion EXT1 and extends along the X-axis, and a second extension line SEL2 that overlaps with the second extension portion EXT2 and extends along the X-axis. The first extension line SEL1 and the second extension line SEL2 can be extension portions that branch off from one end of the extension line SEL and have a shape that bends at a right angle. However, the shape of the extension line SEL is not limited to this. For example, the first extension line SEL1 and the second extension line SEL2 can be extension portions that extend from the upper electrode of the capacitor along the X-axis direction.

[0153] A contact hole CH is formed in the region where one of the first extension portion EXT1 and the second extension portion EXT2 overlaps with the extension line SEL. In the illustrated embodiment, the contact hole CH is formed in the region where a portion of the second extension portion EXT2 overlaps with a portion of the second extension line SEL2. The contact hole CH is formed to pass through at least one layer interposed between the respective second extension portion EXT2 and the second extension line SEL2, and exposes the lower portion of the second extension line SEL2. The second anode electrode ANO2 can be connected to the second electrode 150b of the driving transistor DR through the second extension portion EXT2 and the contact hole CH.

[0154] Since the first extension portion EXT1 and the second extension portion EXT2 are connected to each other via the connecting pattern CNT, the first extension portion EXT1 can be connected to the second electrode 150b of the driving transistor DR via the connecting pattern CNT and the second extension portion EXT2. That is, the first anode electrode ANO1 is connected to the second electrode 150b of the driving transistor DR via the second anode electrode ANO2.

[0155] In this embodiment, the extension line SEL may have an exposed portion EXP that does not overlap with the first extension portion EXT1 and / or the second extension portion EXT2 within the repair portion RP. The exposed portion EXP is located adjacent to the anode electrode ANO, particularly the extension portions EXT1 and EXT2 of the anode electrode ANO. For example, the exposed portion EXP may have a pattern that protrudes outward from one side of the extension line SEL that partially overlaps with the extension portions EXT1 and EXT2 to the outside of the extension portions EXT1 and EXT2. However, the shape of the exposed portion EXP is not limited to this.

[0156] In this embodiment, the extension line SEL may have an exposed portion EXP only for the extension portions EXT1 and EXT2 of the anode electrodes ANO1 and ANO2 connected to the driving transistor DR via the other anode electrodes ANO1 and ANO2. In the illustrated embodiment, since the first anode electrode ANO1 is connected to the driving transistor DR via the second anode electrode ANO2, the first extension line SEL1 has an exposed portion EXP not covered by the first extension portion EXT1. However, this embodiment is not limited to this.

[0157] Reference Figure 13 In the repair portion RP, the passivation layer 160 at least partially covers the extension line SEL. An outer coating 165 is formed at the passivation layer 160. Here, the outer coating 165 is formed as an exposed portion EXP that does not cover the extension line SEL.

[0158] Extensions EXT1 and EXT2 of the anode electrode ANO are formed at the outer coating 165. A dam layer 180 is formed at the anode electrode ANO to define the light-emitting portions EMA1 and EMA2. In this embodiment, the dam layer 180 is formed to expose at least one area of ​​the extension portion (here, the first extension portion EXT1) adjacent to the exposed portion EXP of the extension line SEL.

[0159] In the area where the dam layer 180 is not formed, the first extension portion EXT1 is exposed upwards. A partition wall 185 is formed at the exposed first extension portion EXT1. The side surface of the partition wall 185 has an inverted conical shape. That is, the lower dimension of the partition wall 185 can be smaller than the upper dimension of the partition wall 185. Due to the inverted conical shape of the partition wall 185, the cathode electrode CAT and the light-emitting material layer EML, which are formed later, are formed so as not to cover the lower periphery of the partition wall 185. Therefore, at the periphery of the partition wall 185, the first extension portion EXT1 can be exposed upwards without being covered by the light-emitting material layer EML and the cathode electrode CAT.

[0160] Because of the separator 185, the first extension EXT1 is exposed upwards and is not covered by the light-emitting material layer EML and the cathode electrode CAT. Therefore, the first extension EXT1 can easily contact the extension line SEL (specifically, the exposed portion EXP of the extension line SEL) that is eluted (flowed out) in the process described below.

[0161] Furthermore, in the illustrated embodiment, although the partition wall 185 covers the patterned embankment 180 at the first extension ETX1, the embodiments of this disclosure are not limited thereto. That is, in various embodiments, the embankment 180 may not be formed under the partition wall 185.

[0162] In this embodiment, when one of the light-emitting portions EMA1 and EMA2 fails, the electrical connection from the driving transistor DR to the corresponding anode electrodes ANO1 and ANO2 is disconnected for pixel repair. Specifically, within the repair portion RP, the extension portions EXT1 and EXT2 of the corresponding anode electrodes ANO1 and ANO2 can be laser-cut.

[0163] When the electrical connection between the first anode electrode ANO1 and the driving transistor DR is broken, as referenced Figures 4 to 6 The laser beam is irradiated onto the first extension portion EXT1 of the connecting pattern CNT and / or the first anode electrode ANO1, thereby cutting the first extension portion EXT1 or the connecting pattern CNT. Since the second anode electrode ANO2 maintains an electrical connection with the driving transistor DR through the contact hole CH, the second anode electrode ANO2 can operate normally regardless of the laser cutting of the first anode electrode ANO1.

[0164] When the electrical connection between the second anode electrode ANO2 and the driving transistor DR is broken, as shown in the reference... Figure 11 The second extension portion EXT2 can be cut by irradiating the contact hole CH with a laser beam. Alternatively, the second extension line SEL2 or the connecting pattern CNT can be cut by irradiating the second extension line SEL2 or the connecting pattern CNT from below. Since the first anode electrode ANO1 is connected to the driving transistor DR via the second extension portion EXT2, cutting the second extension portion EXT2 disconnects the electrical connection between the first anode electrode ANO1 and the driving transistor DR. Therefore, laser welding may be required to reconnect the first anode electrode ANO1 and the driving transistor DR after laser cutting.

[0165] Reference Figure 14 In this embodiment, laser welding is performed on the exposed portion EXP of the extension portions EXT1 and EXT2. When the laser beam irradiates the exposed portion EXP, at least partially removing the passivation layer 160 and the upper layer formed at the exposed portion EXP, and the exposed portion EXP can be eluted. The eluted exposed portion EEXP can at least partially cover the surface of the first extension portion EXT1 exposed to the outside at a position adjacent to the eluted exposed portion EEXP. In this way, when the first extension portion EXT1 and the eluted exposed portion EEXP are connected to each other, an electrical connection can be made between the first anode electrode ANO1 and the drive transistor DR.

[0166] In the same or similar manner as described above, this embodiment repairs faulty sub-pixels SP. That is, when the first light-emitting portion EMA1 or the second light-emitting portion EMA2 is defective, repair can be performed in the same or similar manner as described above. Furthermore, in this embodiment, since the anode electrode ANO and the driving transistor DR are connected via the extension line SEL through the contact hole CH formed in the repair portion RP, the area of ​​the transmission portion TA can be prevented from decreasing due to the contact hole CH. Therefore, according to this embodiment, pixel repair can be performed while preventing the area of ​​the transmission portion TA from decreasing.

[0167] Figure 15 It shows along Figure 12 Another implementation of the cross-sectional view taken by line V-V'. Figure 16 It is a description used for Figure 15 A cross-sectional view of a laser welding method for pixel restoration in an organic light-emitting display device. Figure 15 and Figure 16 In the image, components unrelated to pixel restoration have been omitted.

[0168] Reference Figure 15In the repair portion RP, the passivation layer 160 at least partially covers the extension line SEL. An outer coating 165 is formed on the passivation layer 160. Here, the outer coating 165 is formed to not cover the exposed portion EXP of the extension line SEL. In the illustrated embodiment, the outer coating 165 exposes the exposed portion EXP of the first extension line SEL1 without covering it. Furthermore, in this embodiment, the outer coating 165 is formed to further expose a portion of the first extension line SEL1 adjacent to the exposed portion EXP.

[0169] Extensions EXT1 and EXT2 of the anode electrode ANO are formed at the outer coating 165. Since the outer coating 165 exposes a portion of the first extension line SEL1 adjacent to the exposed portion EXP without covering it, the first extension EXT1 is formed at the passivation layer 160 in the region adjacent to the exposed portion EXP. Therefore, in the region adjacent to the exposed portion EXP, only the passivation layer 160 is inserted between the exposed portion EXP and the first extension EXT1. Because the thickness of the passivation layer 160 is less than the thickness of the outer coating 165, in... Figure 15 In the embodiment shown, the distance between the first extension line SEL1 and the first extension portion EXT1 is less than Figure 13 The distance of the implementation shown.

[0170] A dam layer 180 is formed at the anode electrode ANO to define the light-emitting portions EMA1 and EMA2. The dam layer 180 is formed to expose at least one region of the first extension portion EXT1 adjacent to the exposed portion EXP of the extension line SEL. In this embodiment, in the region where a portion of the first extension portion EXT1 and a portion of the exposed portion EXP are arranged to overlap each other and the passivation layer 160 is interposed therebetween, the dam layer 180 is formed to expose at least a portion of the first extension portion EXT1.

[0171] In the area where the dam layer 180 is not formed, the first extension portion EXT1 is exposed upwards. A partition wall 185 is formed at the exposed first extension portion EXT1. The side surface of the partition wall 185 has an inverted conical shape. That is, the lower dimension of the partition wall 185 can be smaller than the upper dimension of the partition wall 185. Due to the inverted conical shape of the partition wall 185, the cathode electrode CAT and the light-emitting material layer EML, which are formed later, are formed so as not to cover the lower periphery of the partition wall 185. Therefore, at the periphery of the partition wall 185, the first extension portion EXT1 can be exposed upwards without being covered by the light-emitting material layer EML and the cathode electrode CAT.

[0172] Furthermore, in the illustrated embodiment, although the partition wall 185 covers the patterned embankment 180 at the first extension ETX1, the embodiments of this disclosure are not limited thereto. That is, in various embodiments, the embankment 180 may not be formed under the partition wall 185.

[0173] Reference Figure 16 During laser welding, a laser beam irradiates the exposed portion EXP. The laser beam can irradiate the surface of the exposed portion EXP that does not overlap with the first extension portion EXT1. When the laser beam irradiates, the passivation layer 160 and the upper layer formed at the exposed portion EXP are removed, and a portion of the exposed portion EXP can be washed away. The washed-away exposed portion EXP can cover the surface of the first extension portion EXT1, which is configured to partially overlap with the exposed portion EXP.

[0174] In this embodiment, the distance between the first extension line SEL1 and the first extension portion EXT1 is relatively smaller than... Figure 13 and Figure 14 The distance in the illustrated embodiment. Therefore, laser welding between the first extension line SEL1 and the first extension portion EXT1 can be performed more easily.

[0175] Figure 17 This is an enlarged view of the repair portion according to the fourth embodiment. Figure 18 It shows along Figure 17 Another implementation of the cross-sectional view taken by line VI-VI'. Figure 19 It is a description used for Figure 18 A cross-sectional view of a laser welding method for pixel restoration in an organic light-emitting display device. Figures 17 to 19 In the image, components unrelated to pixel restoration have been omitted.

[0176] refer to Figure 17 and Figure 18 The passivation layer 160 at least partially covers the extension line SEL. An outer coating 165 is formed at the passivation layer 160. Here, a portion of the outer coating 165 overlaps with the region of the first extension line SEL1 and has an opening OPN that exposes the passivation layer 160.

[0177] An anode electrode ANO is formed at the outer coating 165. The anode electrode ANO covers the passivation layer 160 exposed in the opening OPN formed in the outer coating 165. In this region, the distance between the first extension EXT1 and the first extension line SEL1 can be relatively reduced.

[0178] Reference Figure 19During laser welding, a laser beam irradiates the opening OPN. When irradiated, the passivation layer 160 inserted between the first extension portion EXT1 and the first extension line SEL1 is removed, and the washed-out first extension portion EEXT1 at least partially covers the surface of the first extension line SEL1. Therefore, an electrical connection is formed between the first extension portion EXT1 and the first extension line SEL1 via the washed-out first extension portion EEXT1.

[0179] In this embodiment, the structure of the repair portion RP is relatively simple compared to the previous embodiment, making it easier to perform pixel repair processing.

[0180] Although embodiments of this disclosure have been described with reference to the accompanying drawings, those skilled in the art will understand that this disclosure may be implemented in other specific forms without departing from the spirit or essential characteristics of this disclosure. Therefore, the above embodiments and advantages are merely examples and should not be construed as limiting this disclosure. This teaching can be readily applied to other types of devices. The foregoing description of embodiments is intended to be illustrative, not to limit the scope of the claims. Many substitutions, modifications, and variations will be apparent to those skilled in the art. In the claims, the apparatus plus function claims are intended to cover not only structural equivalents but also equivalent structures.

Claims

1. A display device, comprising: A substrate, wherein a sub-pixel comprising a transmissive portion and a light-emitting portion is disposed thereon; Transistors disposed on the substrate; as well as An organic light-emitting diode connected to the transistor. The transmission portion includes a repair portion, in which the anode electrode of the organic light-emitting diode is connected via a contact hole to an extension line extending from the electrode of the transistor. The extension line includes a first extension line and a second extension line branching from one end of the extension line, and the contact hole is disposed at the end of at least one of the first extension line and the second extension line away from the branch position. Wherein, each of the first extension line and the second extension line includes a portion overlapping with the anode electrode, and The first extension line and the second extension line are configured to allow one of the first extension line and the second extension line to be selectively disconnected from the anode electrode by laser cutting or selectively connected to the anode electrode by laser welding at the portion where they overlap with the anode electrode.

2. The display device according to claim 1, wherein, The anode electrode includes: A first anode electrode, the first anode electrode being disposed at the first light-emitting portion and having a first extension portion extending to the repair portion; and The second anode electrode is disposed at the second light-emitting portion and has a second extension portion extending to the repair portion. The first extension portion is connected to the extension line through a first contact hole, and the second extension portion is connected to the extension line through a second contact hole.

3. The display device according to claim 2, wherein, When the second light-emitting portion is defective, the second anode electrode is cut in the second contact hole or in the second extension portion to separate it from the extension line.

4. The display device according to claim 1, wherein, The anode electrode includes: A first anode electrode disposed in the first light-emitting portion; and The second anode electrode is disposed in the second light-emitting part. The first anode electrode and the second anode electrode extend into the repair portion and are connected to each other within the repair portion.

5. The display device according to claim 4, wherein, The extension line includes an exposed portion formed on one side of the anode electrode adjacent to the repair portion and not overlapping with the anode electrode.

6. The display device according to claim 5, further comprising: A partition wall is formed on the side of the anode electrode adjacent to the exposed portion and has an inverted conical side surface; The light-emitting layer of the organic light-emitting diode covering the anode electrode and the partition wall; as well as A cathode electrode is formed at the light-emitting layer.

7. The display device according to claim 6, wherein, One side of the anode electrode is not covered by the light-emitting layer and the cathode electrode surrounding the partition wall.

8. The display device according to claim 6, wherein, A passivation layer and an outer coating are inserted between one side of the anode electrode and the extension line.

9. The display device according to claim 6, wherein, Only a passivation layer is inserted between one side of the anode electrode and the extension line.

10. The display device according to claim 6, wherein, The exposed portion is a portion that protrudes from the side of the extension line that overlaps with the first anode electrode toward the outside of the first anode electrode.

11. The display device according to claim 10, wherein, When the first light-emitting portion or the second light-emitting portion is defective, the exposed portion is connected to one side of the first anode electrode.

12. The display device according to claim 4, further comprising: A passivation layer covering the extension line within the repaired portion; as well as An outer coating layer is formed at the passivation layer and has an opening that exposes a region of the passivation layer. The first anode electrode is disposed at the outer coating such that at least one region of the first anode electrode overlaps with the opening and the extension line.

13. The display device according to claim 12, wherein, When the first light-emitting portion or the second light-emitting portion is defective, the passivation layer is removed inside the opening, and the extension line and the first anode electrode are connected to each other.

14. The display device according to claim 1, wherein, The first extension line and the second extension line branch off and extend along a first direction at one end, and continue to extend along a second direction.

15. A method for repairing a display device, the display device comprising: A substrate, wherein a sub-pixel is provided, comprising a transmissive portion, a first light-emitting portion, and a second light-emitting portion; Transistors disposed on the substrate; A first anode electrode disposed in the first light-emitting portion; as well as The second anode electrode is disposed in the second light-emitting part. The transmission portion includes a repair portion, in which the first anode electrode and the second anode electrode are connected via contact holes to an extension line extending from the electrode of the transistor. The extension line includes a first extension line and a second extension line branching from one end of the extension line. The contact hole is located at the end of at least one of the first extension line and the second extension line away from the branch position. Wherein, each of the first extension line and the second extension line includes a portion overlapping with the first anode electrode or the second anode electrode, and Wherein, when the second light-emitting portion is defective, the repair method includes: The cutting step of disconnecting the connection between the second anode electrode and the second extension line within the repair section; and The welding step of connecting the first anode electrode and the first extension wire within the repair section.

16. The repair method according to claim 15, wherein: The first anode electrode has a first extension portion that extends into the repaired portion; The second anode electrode has a second extension that extends into the repaired portion. The first extension portion is connected to the extension line through a first contact hole, and the second extension portion is connected to the extension line through a second contact hole. The cutting step includes irradiating the second contact hole or the second extension with a laser beam.

17. The repair method according to claim 15, in, The extension line includes an exposed portion formed on one side adjacent to the first anode electrode within the repair portion and not overlapping with the first anode electrode. Furthermore, the welding step includes irradiating the exposed portion with a laser beam.

18. The repair method according to claim 17, wherein, The exposed portion is eluted by the laser beam and connected to one side of the first anode electrode.

19. The repair method according to claim 15, wherein, The display device further includes: A passivation layer covering the extension line within the repaired portion; and An outer coating layer is formed at the passivation layer and has an opening that exposes a region of the passivation layer. The first anode electrode is disposed at the outer coating such that at least one region of the first anode electrode overlaps with the opening and the extension line. Furthermore, the welding step includes irradiating the first anode electrode within the opening with a laser beam.

20. The repair method according to claim 19, wherein, The passivation layer is removed by the laser beam, and the first anode electrode is connected to the extension line.

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