Substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus. An etching process using a phosphoric acid aqueous solution added with an additive is stably performed. A substrate processing apparatus according to one aspect of the present disclosure includes an inner tank, an outer tank, a lid, and a liquid contact member. The inner tank has an opening at an upper portion, and the inner tank immerses a substrate in a processing liquid. The outer tank is disposed outside the inner tank, and the outer tank receives the processing liquid flowing out from the opening. The lid opens and closes the opening. The liquid contact member has hydrophobicity, and the liquid contact member is disposed at a position where it contacts the processing liquid when the processing liquid containing bubbles flows out from the inner tank to the outer tank.

Description

Technical Field

[0001] The disclosed embodiments relate to a substrate processing apparatus. Background Technology

[0002] Previously, the following techniques were known: in a substrate processing system, the substrate was immersed in an aqueous solution of phosphoric acid with additives to perform etching treatment on the substrate (see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-67995 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for reliably implementing etching processes using an aqueous solution of phosphoric acid with added additives.

[0008] Solution for solving the problem

[0009] A substrate processing apparatus disclosed herein includes an inner tank, an outer tank, a cover, and a liquid contact member. The inner tank has an opening at its upper part for immersing a substrate in a processing liquid. The outer tank is disposed outside the inner tank and receives the processing liquid flowing out from the opening. The cover opens and closes the opening. The liquid contact member is hydrophobic and is disposed at a position that contacts the processing liquid as it flows from the inner tank to the outer tank containing bubbles.

[0010] The effects of the invention

[0011] According to this disclosure, etching processes using an aqueous solution of phosphoric acid with added additives can be stably implemented. Attached Figure Description

[0012] Figure 1 This is a schematic top view showing the structure of the substrate processing system according to the embodiment.

[0013] Figure 2 This is a schematic block diagram showing the structure of the etching process apparatus according to the embodiment.

[0014] Figure 3 This is an enlarged cross-sectional view showing the structure of the processing tank in the embodiment.

[0015] Figure 4A This diagram illustrates the defoaming mechanism of bubbles generated by hydrophobic liquid contact components.

[0016] Figure 4BThis diagram illustrates the defoaming mechanism of bubbles generated by hydrophobic liquid contact components.

[0017] Figure 4C This diagram illustrates the defoaming mechanism of bubbles generated by hydrophobic liquid contact components.

[0018] Figure 4D This diagram illustrates the defoaming mechanism of bubbles generated by hydrophobic liquid contact components.

[0019] Figure 5 This is a top view showing an example of the configuration of the liquid contact members in the processing tank of the embodiment.

[0020] Figure 6 This is a top view showing another example of the configuration of the liquid contact members of the processing tank in the embodiment.

[0021] Figure 7 This is an enlarged cross-sectional view showing the structure of the processing tank in Modified Example 1 of the embodiment.

[0022] Figure 8 This is a top view showing an example of the arrangement of the liquid contact members in the processing tank of a modified embodiment 1.

[0023] Figure 9 This is a top view showing another example of the configuration of the liquid contact member of the treatment tank in a modified example 1 of the embodiment.

[0024] Figure 10 This is a perspective view showing an example of another shape of the liquid contact member of the modified embodiment 1.

[0025] Figure 11 This is a perspective view showing an example of another shape of the liquid contact member of the modified embodiment 1.

[0026] Figure 12 This is an enlarged cross-sectional view showing the structure of the processing tank in Modified Example 2 of the embodiment.

[0027] Figure 13 This is a top view showing an example of the configuration of the liquid contact member of the treatment tank in a modified embodiment 2.

[0028] Figure 14 This is an enlarged cross-sectional view showing the structure of the processing tank in Modified Example 3 of the embodiment.

[0029] Figure 15 This is a top view showing an example of the configuration of the liquid contact member of the treatment tank in a modified embodiment 3.

[0030] Figure 16This is an enlarged cross-sectional view showing the structure of the processing tank in Modified Example 4 of the embodiment.

[0031] Figure 17 This is a top view showing an example of the configuration of the liquid contact member of the treatment tank in Modified Example 4 of the embodiment.

[0032] Figure 18 This is a perspective view showing an example of the shape of the liquid contact member in Modification 4 of the embodiment.

[0033] Figure 19 This is a perspective view showing an example of another shape of the liquid contact member in variation 4 of the embodiment.

[0034] Figure 20 This is a perspective view showing an example of another shape of the liquid contact member in variation 4 of the embodiment.

[0035] Figure 21 This is a perspective view showing the structure of the substrate lifting mechanism in Modified Example 5 of the embodiment.

[0036] Figure 22 This is an enlarged cross-sectional view showing the structure of the substrate processing unit in Modified Example 5 of the embodiment. Detailed Implementation

[0037] Hereinafter, embodiments of the substrate processing apparatus disclosed in this application will be described in detail with reference to the accompanying drawings. However, this disclosure is not limited to the embodiments shown below. Furthermore, the drawings are illustrative, and it should be noted that the dimensional relationships and proportions of the elements may sometimes differ from reality. Moreover, the drawings may sometimes contain portions with different dimensional relationships and proportions.

[0038] Previously, the following techniques were known: in a substrate processing system, the substrate was immersed in an aqueous solution of phosphoric acid with additives to perform an etching process on the substrate.

[0039] For example, by immersing the substrate in an aqueous solution of phosphoric acid (H3PO4), the silicon nitride film in the silicon nitride film (SiN) and silicon oxide film (SiO2) stacked on the substrate can be selectively etched.

[0040] Furthermore, by adding a silicon solution containing silicon to an aqueous phosphoric acid solution, the etching selectivity of the silicon nitride film can be improved. Moreover, by adding an additive that inhibits the precipitation of silicon oxide (hereinafter also referred to as "precipitation inhibitor") to the aqueous phosphoric acid solution, the precipitation of silicon oxide on the silicon oxide film during the etching process can be suppressed.

[0041] However, in the aforementioned prior art, since the alcohols used as solvents in the additives boil in the high-temperature etching solution, a large number of bubbles are sometimes generated in the etching solution.

[0042] Furthermore, because the etching solution contains alcohols that function as surfactants, the bubbles generated at one time are difficult to defoam. Therefore, sometimes the etching solution containing a large number of bubbles will overflow from the processing tank.

[0043] As a result, the amount of liquid in the treatment tank is greatly reduced, making it difficult to carry out the etching process stably.

[0044] Therefore, it is hoped that the above-mentioned problems can be overcome and that the etching process using an aqueous solution of phosphoric acid with additives can be stably implemented.

[0045] <Structure of the substrate processing system>

[0046] First, refer to Figure 1 The structure of the substrate processing system 1 according to the embodiment will be described. Figure 1 This is a schematic top view showing the structure of the substrate processing system 1 according to the embodiment. The substrate processing system 1 is an example of a substrate processing apparatus.

[0047] like Figure 1 As shown, the substrate processing system 1 of the embodiment includes a carrier feeding and discharging unit 2, a batch forming unit 3, a batch placing unit 4, a batch conveying unit 5, a batch processing unit 6, and a control unit 7.

[0048] The carrier feeding and discharging unit 2 includes a carrier platform 20, a carrier conveying mechanism 21, carrier storage units 22 and 23, and a carrier placement platform 24.

[0049] The carrier stage 20 holds multiple carriers 9 transported from the outside. Each carrier 9 is a container that holds multiple (e.g., 25) wafers W arranged vertically in a horizontal orientation. The carrier transport mechanism 21 transports the carriers 9 between the carrier stage 20, the carrier storage sections 22 and 23, and the carrier placement stage 24.

[0050] The substrate transport mechanism 30, described later, is used to transport multiple unprocessed wafers W from the carrier 9 placed on the carrier stage 24 to the batch processing unit 6. Furthermore, the substrate transport mechanism 30 is used to transport multiple processed wafers W from the batch processing unit 6 to the carrier 9 placed on the carrier stage 24.

[0051] The batch forming unit 3 has a substrate transport mechanism 30, which is used to form batches. A batch consists of multiple (e.g., 50 sheets) of wafers W, which are combined and processed simultaneously by combining wafers W housed in one or more carriers 9. The multiple wafers W forming a batch are arranged with their face-to-face states spaced apart by a certain interval.

[0052] The substrate transport mechanism 30 transports multiple wafers W between the carrier 9 placed on the carrier stage 24 and the batch placement section 4.

[0053] The batch placement unit 4 has a batch transport stage 40, which is used to temporarily (standby) place (standby) batches transported by the batch transport unit 5 between the batch forming unit 3 and the batch processing unit 6. The batch transport stage 40 has an infeed-side stage 41 for placing batches formed in the batch forming unit 3 before processing and an outfeed-side stage 42 for placing batches processed in the batch processing unit 6. Multiple wafers W in a batch are placed in a vertical arrangement back-to-back on the infeed-side stage 41 and the outfeed-side stage 42.

[0054] The batch transport unit 5 includes a batch transport mechanism 50, which is used to transport batches between the batch placement unit 4 and the batch processing unit 6, and inside the batch processing unit 6. The batch transport mechanism 50 includes a guide rail 51, a moving body 52, and a substrate holder 53.

[0055] The guide rail 51 is arranged along the X-axis direction, spanning the batch placement section 4 and the batch processing section 6. The moving body 52 is configured to move along the guide rail 51 while holding multiple wafers W. A substrate holder 53 is disposed on the moving body 52, which holds the multiple wafers W arranged back-to-back in an upright position.

[0056] The batch processing unit 6 performs etching, cleaning, and drying processes on multiple wafers W in a batch. Two etching units 60, a cleaning unit 70, a cleaning unit 80, and a drying unit 90 are arranged along the guide rail 51 in the batch processing unit 6.

[0057] Etching apparatus 60 performs batch etching on multiple wafers W. Cleaning apparatus 70 performs batch cleaning on multiple wafers W. Cleaning apparatus 80 cleans the substrate holder 53. Drying apparatus 90 performs batch drying on multiple wafers W. The number of etching apparatus 60, cleaning apparatus 70, cleaning apparatus 80, and drying apparatus 90 is not limited to... Figure 1 Examples.

[0058] The etching processing apparatus 60 includes an etching tank 61, a rinsing tank 62, and substrate lifting mechanisms 63 and 64.

[0059] The processing tank 61 is capable of accommodating a batch of wafers W arranged in an upright position. The processing tank 61 stores an etching solution (hereinafter also referred to as "etching solution"). The details of the processing tank 61 will be described later.

[0060] The processing tank 62 contains a rinsing solution (such as deionized water). Multiple wafers W forming a batch are held in a front-to-back arrangement in an upright position by the substrate lifting mechanisms 63 and 64.

[0061] The etching apparatus 60 uses a substrate lifting mechanism 63 to hold the batch transported by the batch transport unit 5 and immerses it in the etching solution in the processing tank 61 for etching. The etching process takes approximately 1 to 3 hours.

[0062] The batches that have undergone etching in processing tank 61 are conveyed to processing tank 62 by batch conveying unit 5. The etching processing apparatus 60 then holds the conveyed batches using substrate lifting mechanism 64 and immerses them in rinsing liquid in processing tank 62 for rinsing. The batches that have undergone rinsing in processing tank 62 are then conveyed to processing tank 71 of cleaning processing apparatus 70 by batch conveying unit 5.

[0063] The cleaning processing apparatus 70 includes a cleaning tank 71, a rinsing tank 72, and substrate lifting mechanisms 73 and 74. The cleaning tank 71 stores a cleaning solution (hereinafter also referred to as "cleaning solution"). The cleaning solution may be, for example, SC-1 (a mixture of ammonia, hydrogen peroxide, and water).

[0064] The rinsing tank 72 contains a rinsing solution (such as deionized water). Multiple wafers W in a batch are held in a standing position by the substrate lifting mechanisms 73 and 74.

[0065] The cleaning process apparatus 70 uses the substrate lifting mechanism 73 to hold the batch conveyed by the batch conveying unit 5 and immerses it in the cleaning solution of the processing tank 71 to perform cleaning process.

[0066] The batches that have undergone cleaning in the processing tank 71 are conveyed to the processing tank 72 by the batch conveying unit 5. The cleaning processing apparatus 70 then holds the conveyed batches using the substrate lifting mechanism 74 and immerses them in the rinsing solution of the processing tank 72 for rinsing. The batches that have undergone rinsing in the processing tank 72 are then conveyed to the processing tank 91 of the drying processing apparatus 90 by the batch conveying unit 5.

[0067] The drying apparatus 90 includes a processing tank 91 and a substrate lifting mechanism 92. A drying gas is supplied to the processing tank 91. Multiple wafers W in a batch are held in a front-to-back arrangement in an upright position by the substrate lifting mechanism 92.

[0068] The drying apparatus 90 uses a substrate lifting mechanism 92 to hold the batches transported by the batch transport unit 5 and performs drying treatment using processing gas supplied in the processing tank 91. The batches that have undergone drying treatment in the processing tank 91 are transported to the batch loading unit 4 via the batch transport unit 5.

[0069] The cleaning process apparatus 80 performs cleaning process on the substrate holder 53 by supplying a cleaning solution to the substrate holder 53 of the batch conveying mechanism 50 and then supplying it with a drying gas.

[0070] The control unit 7 controls the operation of each part of the substrate processing system 1 (carrier feeding / discharging unit 2, batch forming unit 3, batch placing unit 4, batch conveying unit 5, and batch processing unit 6, etc.). The control unit 7 controls the operation of each part of the substrate processing system 1 based on signals from switches, various sensors, etc.

[0071] The control unit 7 includes a microcomputer and various circuits. The microcomputer has a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc. The control unit 7 controls the operation of the board processing system 1 by reading and executing programs stored in a storage unit (not shown).

[0072] The control unit 7 has a storage medium 8 that can be read by a computer. The storage medium 8 stores the aforementioned program that controls various processes executed in the substrate processing system 1. The program can be stored in the computer-readable storage medium 8 or loaded into the storage medium 8 of the control unit 7 from other storage media.

[0073] Storage media 8 that can be read by a computer include, for example, hard disks (HD), floppy disks (FD), optical discs (CD), magneto-optical discs (MO), and memory cards.

[0074] <Structure of the Etching Processing Equipment>

[0075] Next, refer to Figure 2 The structure of the etching process apparatus 60 for performing the etching process on wafer W will be described. Figure 2 This is a schematic block diagram showing the structure of the etching processing apparatus 60 according to the embodiment.

[0076] The etching processing apparatus 60 includes an etching solution supply unit 100 and a substrate processing unit 110. The etching solution supply unit 100 generates etching solution L and supplies it to the substrate processing unit 110. The etching solution L is an example of a processing solution.

[0077] The etching solution supply unit 100 includes a phosphoric acid aqueous solution supply unit 101, a silicon solution supply unit 102, a precipitation inhibitor supply unit 103, a mixing mechanism 104, an etching solution supply path 105, and a flow regulator 106.

[0078] The phosphoric acid aqueous solution supply unit 101 supplies phosphoric acid aqueous solution to the mixing mechanism 104. The phosphoric acid aqueous solution supply unit 101 includes a phosphoric acid aqueous solution supply source 101a, a phosphoric acid aqueous solution supply path 101b, and a flow regulator 101c.

[0079] The phosphoric acid aqueous solution supply source 101a is, for example, a container for storing phosphoric acid aqueous solution. The phosphoric acid aqueous solution supply path 101b connects the phosphoric acid aqueous solution supply source 101a and the mixing mechanism 104, supplying phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply source 101a to the mixing mechanism 104.

[0080] A flow regulator 101c is disposed in the phosphoric acid aqueous solution supply path 101b and is used to adjust the flow rate of the phosphoric acid aqueous solution supplied to the mixing mechanism 104. The flow regulator 101c includes an on / off valve, a flow control valve, and a flow meter, etc.

[0081] The silicon solution supply unit 102 supplies silicon solution to the mixing mechanism 104. The silicon solution supply unit 102 has a silicon solution supply source 102a, a silicon solution supply path 102b, and a flow regulator 102c.

[0082] The silicon solution supply source 102a is, for example, a container for storing silicon solution. The silicon solution supply path 102b connects the silicon solution supply source 102a and the mixing mechanism 104, supplying silicon solution from the silicon solution supply source 102a to the mixing mechanism 104.

[0083] A flow regulator 102c is disposed in the silicon solution supply path 102b and is used to adjust the flow rate of the silicon solution supplied to the mixing mechanism 104. The flow regulator 102c includes an on / off valve, a flow control valve, and a flow meter, etc. The silicon solution in the embodiment is, for example, a solution formed by dispersing silica gel.

[0084] The precipitation inhibitor supply unit 103 supplies precipitation inhibitor to the mixing unit 104. The precipitation inhibitor supply unit 103 includes a precipitation inhibitor supply source 103a, a precipitation inhibitor supply path 103b, and a flow regulator 103c.

[0085] The precipitation inhibitor supply source 103a is, for example, a container for storing precipitation inhibitors. The precipitation inhibitor supply path 103b connects the precipitation inhibitor supply source 103a and the mixing mechanism 104, supplying precipitation inhibitors from the precipitation inhibitor supply source 103a to the mixing mechanism 104.

[0086] A flow regulator 103c is configured in the precipitation inhibitor supply path 103b to adjust the flow rate of the precipitation inhibitor supplied to the mixing mechanism 104. The flow regulator 103c includes an on / off valve, a flow control valve, and a flow meter, etc.

[0087] The precipitation inhibitor of the embodiment only needs to contain a component that inhibits the precipitation of silicon oxide. Alternatively, the precipitation inhibitor may contain a component that inhibits the precipitation of silicon oxide by stabilizing silicon ions dissolved in an aqueous phosphoric acid solution in a dissolved state. Furthermore, the precipitation inhibitor may contain a component that inhibits the precipitation of silicon oxide using other known methods.

[0088] The precipitation inhibitor in this embodiment can be, for example, an aqueous solution of hexafluorosilicic acid (H2SiF6) containing fluorine. Alternatively, the precipitation inhibitor may contain additives such as ammonia to stabilize the hexafluorosilicic acid in the aqueous solution.

[0089] As a precipitation inhibitor for implementation, for example, ammonium hexafluorosilicate (NH4)2SiF6, sodium hexafluorosilicate (Na2SiF6), etc. can be used.

[0090] Alternatively, the precipitation inhibitor in the implementation method may contain ions with a radius of [missing information]. Compounds containing elements that are cations. Here, "ionic radius" is the radius of an ion obtained empirically from the sum of the radii of the anion and the cation, derived from the lattice constant of the crystal lattice.

[0091] Alternatively, the precipitation inhibitor in the implementation may be an oxide containing any of the elements selected from aluminum, potassium, lithium, sodium, magnesium, calcium, zirconium, tungsten, titanium, molybdenum, hafnium, nickel, and chromium.

[0092] Alternatively, the precipitation inhibitor in the embodiment may replace the oxide of any of the above-mentioned elements, or contain at least one of the nitride, chloride, bromide, hydroxide, and nitrate of any of the above-mentioned elements in addition to the oxide of any of the above-mentioned elements.

[0093] Alternatively, the precipitation inhibitor in the embodiments may contain at least one of Al(OH)3, AlCl3, AlBr3, Al(NO3)3, Al2(SO4)3, AlPO4, and Al2O3.

[0094] Alternatively, the precipitation inhibitor of the embodiments may contain at least one of KCl, KBr, KOH, and KNO3. Furthermore, the precipitation inhibitor of the embodiments may contain at least one of LiCl, NaCl, MgCl2, CaCl2, and ZrCl4.

[0095] The mixing mechanism 104 mixes an aqueous phosphoric acid solution, a silicon solution, and a precipitation inhibitor to generate an etchant L. That is, the etchant L in this embodiment contains an aqueous phosphoric acid solution, a precipitation inhibitor, and a silicon solution.

[0096] Furthermore, at least one of the silicon solution and the precipitation inhibitor in the embodiment contains an alcohol as a solvent. The alcohol contained as a solvent is, for example, any one of methanol, ethanol, propanol, and isopropanol. Thus, the etching solution L in the embodiment contains an aqueous phosphoric acid solution and the aforementioned alcohol.

[0097] The etching solution supply path 105 connects the mixing mechanism 104 and the outer tank 112 of the processing tank 61, and supplies etching solution L from the mixing mechanism 104 to the outer tank 112.

[0098] A flow regulator 106 is disposed in the etching solution supply path 105 and is used to adjust the flow rate of the etching solution L supplied to the outer tank 112. The flow regulator 106 includes an on / off valve, a flow control valve, and a flow meter.

[0099] The substrate processing unit 110 immerses the wafer W in the etching solution L supplied from the etching solution supply unit 100 and performs an etching process on the wafer W. The wafer W is an example of a substrate. In an embodiment, for example, the silicon nitride film in the silicon nitride film and the silicon oxide film formed on the wafer W can be selectively etched.

[0100] The substrate processing unit 110 includes a processing tank 61, a substrate lifting mechanism 63, a circulation path 120, a DIW supply unit 130, a bubbling gas supply unit 140, and a processing liquid discharge unit 150. The processing tank 61 has an inner tank 111, an outer tank 112, and a cover 113.

[0101] The inner tank 111 is a tank for immersing the wafer W in the etching solution L, and contains the etching solution L for immersion. The inner tank 111 has an opening 111a at the top, and the etching solution L is stored up to the vicinity of the opening 111a.

[0102] In the inner tank 111, a substrate lifting mechanism 63 is used to immerse multiple wafers W in etching solution L for etching. The substrate lifting mechanism 63 is configured to be able to lift and hold the multiple wafers W in a vertical, front-to-back arrangement.

[0103] The outer tank 112 is disposed outside the inner tank 111 in a manner that surrounds the inner tank 111, and is used to receive the etching solution L flowing out from the opening 111a of the inner tank 111. Figure 2 As shown, the liquid level in the outer tank 112 is maintained at a lower level than that in the inner tank 111.

[0104] In addition, the outer tank 112 has a temperature sensor (not shown) and a phosphoric acid concentration sensor. The temperature sensor detects the temperature of the etching solution L, and the phosphoric acid concentration sensor detects the phosphoric acid concentration of the etching solution L. The signals generated by the temperature sensor and the phosphoric acid concentration sensor of the outer tank 112 are sent to the control unit 7 described above.

[0105] The cover 113 opens and closes the opening 111a of the inner groove 111. That is, the cover 113 can move between a closed position covering the opening 111a of the inner groove 111 and an open position opening the opening 111a.

[0106] Control Unit 7 (refer to) Figure 1 By positioning the cover 113 in the closed position, the evaporation of the etching solution L within the inner tank 111 can be suppressed. Furthermore, by positioning the cover 113 in the open position, the control unit 7 can feed the wafer W into and out of the inner tank 111.

[0107] In addition, Figure 2 The example shown is configured to open and close the opening 111a using two covers 113, but the structure of the cover 113 is not limited to this example. For example, it can also be configured to open and close the opening 111a using one cover 113.

[0108] The inner groove 111, the outer groove 112, and the cover 113 are made of materials with high heat resistance and chemical resistance, such as quartz. As a result, the control unit 7 can use an etching solution L maintained at a high temperature (e.g., 150°C or higher) to etch the wafer W, thus enabling efficient etching of the wafer W.

[0109] The outer tank 112 and the inner tank 111 are connected by a circulation path 120. One end of the circulation path 120 is connected to the bottom of the outer tank 112, and the other end of the circulation path 120 is connected to the treatment fluid supply nozzle 125 located in the inner tank 111.

[0110] Pump 121, heater 122, filter 123 and silicon concentration sensor 124 are located in sequence on circulation path 120 from the outer tank 112 side.

[0111] Pump 121 is used to create a circulating flow of etching solution L, which is transported from outer tank 112 to inner tank 111 via circulation path 120. Furthermore, the etching solution L overflows from opening 111a of inner tank 111 and flows back to outer tank 112. Thus, a circulating flow of etching solution L is formed within substrate processing section 110. That is, this circulating flow is formed in outer tank 112, circulation path 120, and inner tank 111.

[0112] Heater 122 adjusts the temperature of the etching solution L circulating in circulation path 120. Filter 123 filters the etching solution L circulating in circulation path 120. Silicon concentration sensor 124 detects the silicon concentration of the etching solution L circulating in circulation path 120. The signal generated by silicon concentration sensor 124 is sent to control unit 7.

[0113] The DIW supply unit 130 includes a DIW supply source 130a, a DIW supply path 130b, and a flow regulator 130c. The DIW supply unit 130 supplies DIW (Deionized Water) to the outer tank 112 to adjust the concentration of the etching solution L stored in the processing tank 61.

[0114] The DIW supply path 130b connects the DIW supply source 130a and the outer tank 112, supplying DIW at a specified temperature from the DIW supply source 130a to the outer tank 112.

[0115] A flow regulator 130c is configured in the DIW supply path 130b to adjust the supply amount of DIW to the outer tank 112. The flow regulator 130c includes an on / off valve, a flow control valve, and a flow meter. By adjusting the supply amount of DIW using the flow regulator 130c, the temperature, phosphoric acid concentration, silicon concentration, and precipitation inhibitor concentration of the etching solution L within the etching processing apparatus 60 are adjusted.

[0116] The bubbling gas supply unit 140 ejects bubbles of an inactive gas (e.g., nitrogen) into the etching solution L stored in the inner tank 111. The bubbling gas supply unit 140 includes an inactive gas supply source 140a, an inactive gas supply path 140b, a flow regulator 140c, and a gas nozzle 140d.

[0117] The inactive gas supply path 140b connects the inactive gas supply source 140a and the gas nozzle 140d, supplying an inactive gas (e.g., nitrogen) from the inactive gas supply source 140a to the gas nozzle 140d.

[0118] A flow regulator 140c is configured in the inactive gas supply path 140b to adjust the supply amount of inactive gas to the gas nozzle 140d. The flow regulator 140c includes an on / off valve, a flow control valve, and a flow meter.

[0119] Gas nozzle 140d is located, for example, below wafer W and processing liquid supply nozzle 125 within inner tank 111. Gas nozzle 140d ejects bubbles of inactive gas into the etching solution L stored in inner tank 111.

[0120] The etching apparatus 60 of this embodiment supplies rapidly flowing etchant L to the gaps between multiple wafers W arranged within the inner tank 111 by ejecting bubbles of inactive gas from the gas nozzle 140d. Therefore, according to this embodiment, the multiple wafers W can be etched efficiently and uniformly.

[0121] When all or part of the etching solution L used in the etching process is replaced, the processing solution discharge unit 150 discharges the etching solution L to the discharge device DR. The processing solution discharge unit 150 has a discharge path 150a, a flow regulator 150b, and a cooling tank 150c.

[0122] Discharge path 150a is connected to circulation path 120. Flow regulator 150b is configured in discharge path 150a to adjust the discharge rate of etching solution L. Flow regulator 150b includes an on / off valve, a flow control valve, and a flow meter.

[0123] Cooling tank 150c temporarily stores and cools the etching solution L flowing through discharge path 150a. In cooling tank 150c, the discharge rate of etching solution L is adjusted using flow regulator 150b.

[0124] In the etching apparatus 60 described so far, an alcohol, sometimes used in the silicon solution and precipitation inhibitor (hereinafter also collectively referred to as "additive"), boils in the high-temperature etching solution L, generating a large number of bubbles B in the etching solution L (see reference). Figure 4A ).

[0125] Furthermore, in the etching processing apparatus 60, a large number of bubbles B are sometimes generated in the etching solution L due to bubbles of inactive gas ejected from the bubbling gas supply section 140.

[0126] Furthermore, since the etching solution L contains alcohols that function as surfactants, the bubbles B generated at one time are difficult to defoam. Therefore, the etching solution L containing a large amount of bubbles B may overflow from the outer tank 112 to the outside.

[0127] Therefore, in the substrate processing system 1 of the embodiment, by making the processing tank 61 into the structure described below, it is possible to efficiently defoam the bubbles B generated in the etching solution L.

[0128] <Details of the processing tank>

[0129] Next, refer to Figures 3-6The detailed structure of the processing tank 61 in the embodiment will be described. Figure 3 This is an enlarged cross-sectional view showing the structure of the processing tank 61 in the embodiment. Additionally, Figure 3 The diagram shows the state in which the cover 113 is positioned in the closed position and the etching solution L flows out from the gap between the edge 111b of the inner groove 111 and the cover 113 to the outer groove 112.

[0130] In addition to the inner tank 111, outer tank 112, and cover 113 described above, the processing tank 61 of this embodiment also includes a liquid contact member 114. This liquid contact member 114 is disposed in a container containing foam B (see reference 114). Figure 4A The position where the etching solution L comes into contact with the inner tank 111 when it flows out of the outer tank 112.

[0131] For example, such as Figure 3 As shown, the liquid contact member 114 is disposed on the inner wall surface 112a of the outer tank 112. The liquid contact member 114 is disposed, for example, on the inner wall surface 112a of the outer tank 112 between a position lower than a predetermined liquid level in the outer tank 112 and the edge portion 112b of the outer tank 112.

[0132] Furthermore, the liquid contact member 114 in this embodiment is made of a hydrophobic material. Moreover, by bringing the etching solution L containing bubbles B into contact with the hydrophobic liquid contact member 114, the processing tank 61 in this embodiment can efficiently defoam the bubbles B generated in the etching solution L. This mechanism will be explained below.

[0133] Figures 4A to 4D This is a diagram illustrating the defoaming mechanism of bubble B caused by the hydrophobic liquid contact member 114. Figure 4A The image shows the state in which bubble B has just adhered to the surface 114a of the liquid contact member 114.

[0134] like Figure 4A As shown, since the alcohol in the additive acts as surfactant S covering the surface of bubble B, bubble B is maintained without defoaming after adhering to the surface 114a of the liquid contact member 114. On the other hand, the surface 114a of the liquid contact member 114 is hydrophobic, and no liquid film is formed on the surface 114a of the liquid contact member 114. Therefore, surfactant S is almost absent on the surface 114a of the liquid contact member 114.

[0135] As a result, a concentration gradient of surfactant S is generated at the contact portion between bubble B and the surface 114a of the liquid contact member 114. Consequently, the surfactant S near this contact portion moves toward the surface 114a of the liquid contact member 114. Therefore, as... Figure 4BAs shown, in bubble B, a concentration gradient of surfactant S (i.e., a local gradient of surface tension) is generated between the contact portion that contacts the surface 114a of the liquid contact member 114 and other portions.

[0136] Therefore, in bubble B, a local gradient effect that eliminates surface tension is generated (the so-called Marangoni effect), thus, as Figure 4C As shown, the distribution of surfactant S is approximately uniform throughout bubble B.

[0137] However, at bubble B, a concentration gradient of surfactant S is generated again at the contact portion between bubble B and the surface 114a of liquid contact member 114. Therefore, surfactant S near the contact portion moves toward the surface 114a of liquid contact member 114.

[0138] Thus, the phenomenon of surfactant S near the contact portion moving towards the surface 114a of the liquid contact member 114, and the phenomenon caused by the Marangoni effect, are alternately and repeatedly generated in the bubbles B adsorbed on the surface 114a of the liquid contact member 114 near the contact portion.

[0139] As a result, the amount of surfactant S covering the surface of bubble B gradually decreases, and consequently, the surface tension of bubble B gradually increases, eventually as... Figure 4D As shown, the bubble B adhering to the surface 114a of the liquid contact member 114 is defoamed.

[0140] Thus, by bringing the etching solution L containing bubbles B into contact with the hydrophobic liquid contact member 114, the processing tank 61 of this embodiment can efficiently defoam the bubbles B generated in the etching solution L. Therefore, according to this embodiment, processing using the etching solution L with added additives can be carried out stably.

[0141] Furthermore, the quartz used as the raw material for the inner groove 111, outer groove 112, and cover 113 has a hydrophilic surface, making it difficult for it to naturally form hydrophilic compounds. Figures 4A to 4D The defoaming phenomenon of bubble B is described in the text.

[0142] The liquid contact component 114 may be made of any of the following materials: PTFE (polytetrafluoroethylene), PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer), and PCTFE (polytrifluorochloroethylene).

[0143] In this embodiment, the liquid contact member 114, as described above, has hydrophobicity and high chemical resistance, thereby enabling stable processing using an etching solution L containing an aqueous phosphoric acid solution.

[0144] Figure 5 This is a top view showing an example of the arrangement of the liquid contact member 114 of the processing tank 61 in the embodiment. Figure 5 As shown, in the processing slot 61, the outer slot 112 is configured to surround the four sides of the inner slot 111 when viewed from above.

[0145] In addition, Figure 5 In the example, the etching solution L flows out from the two edge portions 111b (left and right edge portions 111b in the figure) of the inner tank 111, which are the edges of the four sides of the inner tank 111, to the outer tank 112.

[0146] Therefore, the liquid contact member 114 of the embodiment can be disposed on the inner wall surface 112a of two of the four sides of the outer tank 112. In addition, the liquid contact member 114 can be disposed opposite to the edge portion 111b of the inner tank 111 on both sides from which the etching solution L flows out.

[0147] Thus, in the inner tank 111, the supply contains bubble B (refer to...) Figure 4A A liquid contact member 114 is disposed near the edge 111b from which the etching solution L flows out, thereby enabling more efficient defoaming of the bubbles B generated in the etching solution L.

[0148] Furthermore, the configuration of the liquid contact member 114 in the embodiment is not limited to... Figure 5 Examples. Figure 6 This is a top view showing another example of the configuration of the liquid contact member 114 of the processing tank 61 in the embodiment. Figure 6 In the example, the etching solution L flows from the edges 111b of all four sides of the inner tank 111 to the outer tank 112.

[0149] Therefore, the liquid contact member 114 of the embodiment can be disposed on the inner wall surface 112a of all four sides of the outer tank 112. That is, the liquid contact member 114 can be disposed opposite to the edge portion 111b of all four sides of the inner tank 111 from which the etching solution L flows out.

[0150] Thus, in the inner tank 111, the supply contains bubble B (refer to...) Figure 4A A liquid contact member 114 is disposed near the edge 111b from which the etching solution L flows out, thereby enabling more efficient defoaming of the bubbles B generated in the etching solution L.

[0151] As explained so far, the liquid contact member 114 of the embodiment can be disposed on at least two of the inner wall surfaces 112a of the four sides of the outer tank 112. This allows for more efficient defoaming of the bubbles B generated in the etching solution L.

[0152] In addition, although Figure 5 and Figure 6Although not shown, liquid contact members 114 may also be configured on the inner wall surfaces 112a of three of the four sides of the outer tank 112.

[0153] Furthermore, the processing tank 61 of the embodiment is not limited to the case where a hydrophobic liquid contact member 114 is disposed on the inner wall surface 112a of the outer tank 112, but may also be a case where the inner wall surface 112a of the outer tank 112 is itself a hydrophobic surface.

[0154] That is, at least a portion (here, the inner wall surface 112a of the outer tank 112) of the contact surface of the processing tank 61 in the embodiment that comes into contact with the etching solution L containing bubble B when it flows from the inner tank 111 to the outer tank 112 is a hydrophobic surface.

[0155] Therefore, as described above, bubbles B can also be defoamed on the inner wall surface 112a of the outer tank 112, which serves as a hydrophobic surface. Thus, bubbles B generated in the etching solution L can be defoamed efficiently. Therefore, according to the embodiment, the treatment using the etching solution L with added additives can be carried out stably.

[0156] In addition, as a method to make the surface of a hydrophilic raw material (quartz) hydrophobic, existing methods such as coating or lining with hydrophobic materials can be used.

[0157] <Variation Example 1>

[0158] Next, refer to Figures 7 to 22 Various modifications of the substrate processing system 1 of the embodiment will be described. Figure 7 This is an enlarged cross-sectional view showing the structure of the processing groove 61 in Modified Example 1 of the Embodiment. Furthermore, in the various modifications described below, the same reference numerals are used for the same parts as in the Embodiment, and repeated descriptions are omitted.

[0159] In Modification 1, the arrangement of the liquid contact member 114 of the treatment tank 61 differs from the embodiment described above. Specifically, in Modification 1, the liquid contact member 114 is plate-shaped and is vertically disposed inside the outer tank 112. This liquid contact member 114 is, for example, flat and disposed between the bottom surface of the outer tank 112 and a position higher than a predetermined liquid level in the outer tank 112.

[0160] In variation example 1, Figure 7 The liquid contact member 114 is positioned as shown, thereby enabling the liquid to contact a liquid containing bubble B (see reference). Figure 4A When the etching solution L flows from the inner tank 111 to the outer tank 112, the etching solution L comes into contact with the hydrophobic liquid contact member 114.

[0161] Therefore, in Modified Example 1, the bubbles B generated in the etching solution L can be defoamed efficiently, and thus, the processing using the etching solution L with added additives can be carried out stably.

[0162] Figure 8 This is a top view showing an example of the arrangement of the liquid contact member 114 of the treatment tank 61 in Modified Example 1 of the embodiment. Additionally, in Figure 8 In the example, the etching solution L flows out from the two edge portions 111b (left and right edge portions 111b in the figure) of the inner tank 111, which are the edges of the four sides of the inner tank 111, to the outer tank 112.

[0163] Therefore, the liquid contact member 114 of Modified Example 1 can be disposed on both sides of the outer tank 112 located on the four sides of the inner tank 111. In addition, the liquid contact member 114 can be disposed opposite to the edge portion 111b of the two sides of the inner tank 111 from which the etching solution L flows out.

[0164] Thus, in the inner tank 111, the supply contains bubble B (refer to...) Figure 4A A liquid contact member 114 is disposed near the edge 111b from which the etching solution L flows out, thereby enabling more efficient defoaming of the bubbles B generated in the etching solution L.

[0165] Furthermore, the configuration of the liquid contact member 114 in Modified Example 1 is not limited to... Figure 8 Examples. Figure 9 This is a top view showing another example of the arrangement of the liquid contact member 114 of the processing tank 61 in Modified Example 1 of the embodiment. Figure 9 In the example, the etching solution L flows from the edges 111b of all four sides of the inner tank 111 to the outer tank 112.

[0166] Therefore, the liquid contact member 114 of Modified Example 1 can be disposed on all four sides of the outer tank 112 located on the four sides of the inner tank 111. That is, the liquid contact member 114 can be disposed opposite to the edge portion 111b of all four sides of the inner tank 111 from which the etching solution L flows out.

[0167] Thus, in the inner tank 111, the supply contains bubble B (refer to...) Figure 4A A liquid contact member 114 is disposed near the edge 111b from which the etching solution L flows out, thereby enabling more efficient defoaming of the bubbles B generated in the etching solution L.

[0168] As explained so far, the liquid contact member 114 of Modified Example 1 can be disposed on at least two sides of the outer groove 112, which is located on the four sides of the inner groove 111. This allows for more efficient defoaming of the bubbles B generated in the etching solution L.

[0169] In addition, although Figure 8 and Figure 9 Although not shown in the diagram, liquid contact members 114 may also be arranged on three sides of the outer groove 112 located on the four sides of the inner groove 111.

[0170] Furthermore, in the above example, the liquid contact member 114 is shown to be in the form of a flat plate, but the shape of the liquid contact member 114 is not limited to a flat plate. Figure 10 and Figure 11 This is a perspective view showing an example of another shape of the liquid contact member 114 in a variation of embodiment 1.

[0171] like Figure 10 As shown, the liquid contact member 114 in Modified Example 1 can also be constructed by combining columnar members. This increases the surface area of ​​the liquid contact member 114, thus enabling more efficient handling of bubbles B (see reference) generated in the etching solution L. Figure 4A Defoaming is performed.

[0172] In addition, such as Figure 11 As shown, the liquid contact member 114 in Modified Example 1 can also be configured as a serrated shape. This increases the surface area of ​​the liquid contact member 114, thus enabling more efficient handling of bubbles B (see reference) generated in the etching solution L. Figure 4A Defoaming is performed.

[0173] Furthermore, in Modification 1, the method of increasing the surface area of ​​the liquid contact member 114 is not limited to... Figure 10 and Figure 11 For example, the plate-shaped member could be hollow, or its surface could be rough. This increases the surface area of ​​the liquid contact member 114, thus enabling more efficient defoaming of the bubbles B generated in the etching solution L.

[0174] <Variation Example 2>

[0175] Figure 12 This is an enlarged cross-sectional view showing the structure of the processing tank 61 in modified example 2 of the embodiment. Figure 13 This is a top view showing an example of the arrangement of the liquid contact member 114 in the processing tank 61 of Modified Example 2 of the embodiment. Additionally, in Figure 13 The illustration of cover 113 is omitted in the text.

[0176] like Figure 12 As shown, in Modified Example 2, the liquid contact member 114 is disposed on the bottom surface 113a of the cover 113. Furthermore, as... Figure 13As shown, in Modified Example 2, the liquid contact member 114 is configured, for example, along the edge portions 111b of the inner groove 111 on both sides from which the etching solution L flows out (the left and right edge portions 111b in the figure).

[0177] In Modification 2, the liquid contact member 114 is disposed at the aforementioned position, thereby enabling the liquid to contact with the bubble B (see reference). Figure 4A When the etching solution L flows from the inner tank 111 to the outer tank 112, the etching solution L comes into contact with the hydrophobic liquid contact member 114.

[0178] Therefore, in Modification 2, the bubbles B generated in the etching solution L can be defoamed efficiently, and thus, the processing using the etching solution L with added additives can be carried out stably.

[0179] Furthermore, in Modification 2, the liquid contact member 114 can be disposed along the edge portions 111b on both sides of the inner tank 111 from which the etching solution L flows out. That is, for the liquid contact member 114 in Modification 2, it may not be disposed on the bottom surface 113a, except for the portion adjacent to the gap between the edge portion 111b from which the etching solution L flows out and the cover 113.

[0180] Therefore, the interior of the inner tank 111 can be visually inspected from the outside using the central portion of the quartz cover 113 (the portion where the liquid contact member 114 is not disposed). Thus, according to Modified Example 2, the state of the wafer W during the etching process can be visually inspected, and therefore, the process using the etch solution L with added additives can be performed more stably.

[0181] In addition, in Modification 2, when the etching solution L flows out from the edge portion 111b of three or four sides of the inner tank 111, the liquid contact member 114 can be arranged along the edge portion 111b of three or four sides of the inner tank 111.

[0182] Furthermore, the processing groove 61 in Modified Example 2 is not limited to the case where a hydrophobic liquid contact member 114 is disposed on the bottom surface 113a of the cover 113, but may also be a hydrophobic surface itself.

[0183] Therefore, bubbles B can also be defoamed on the bottom surface 113a of the cover 113, which is a hydrophobic surface, thus efficiently defoaming bubbles B generated in the etching solution L. Therefore, according to Modified Example 2, the treatment using the etching solution L with added additives can be carried out stably.

[0184] <Variation Example 3>

[0185] Figure 14This is an enlarged cross-sectional view showing the structure of the processing tank 61 in modified example 3 of the embodiment. Figure 15 This is a top view showing an example of the arrangement of the liquid contact member 114 of the processing tank 61 in a modified embodiment 3.

[0186] like Figure 14 As shown, in Modified Example 3, the liquid contact member 114 is disposed at the edge portion 111b of the inner groove 111. Furthermore, as... Figure 15 As shown, the liquid contact member 114 of Modified Example 3 is disposed, for example, in the edge portions 111b of the inner tank 111 on the four sides of the inner tank 111, on the two sides from which the etching solution L flows out (the left and right edge portions 111b in the figure).

[0187] Therefore, in variation example 3, it is possible to contain bubble B (refer to...) Figure 4A When the etching solution L flows from the inner tank 111 to the outer tank 112, the etching solution L comes into contact with the hydrophobic liquid contact member 114.

[0188] Therefore, according to Modification Example 3, the bubbles B generated in the etching solution L can be defoamed efficiently, and thus, the processing using the etching solution L with added additives can be carried out stably.

[0189] In addition, such as Figure 14 As shown, the liquid contact member 114 of Modified Example 3 can also be disposed on the inner wall surface 111c of the inner groove 111 adjacent to the edge portion 111b and the outer wall surface 111d of the inner groove 111 adjacent to the edge portion 111b.

[0190] That is, the liquid contact member 114 in Modified Example 3 can also be disposed near the edge portion 111b of the inner tank 111. Thus, in Modified Example 3, the bubbles B generated in the etching solution L can be defoamed more efficiently.

[0191] In addition, in modified example 3, when the etching solution L flows out from the edge portion 111b of three or four sides of the inner tank 111, a liquid contact member 114 can be disposed on the edge portion 111b of three or four sides of the inner tank 111.

[0192] Furthermore, the processing tank 61 in Modified Example 3 is not limited to the case where a hydrophobic liquid contact member 114 is disposed on the edge portion 111b of the inner tank 111, but may also be a hydrophobic surface itself on the edge portion 111b of the inner tank 111.

[0193] Therefore, bubbles B can also be defoamed at the edge 111b of the inner tank 111, which serves as a hydrophobic surface. Thus, bubbles B generated in the etching solution L can be defoamed efficiently. Therefore, according to Modified Example 3, the processing using the etching solution L with added additives can be carried out stably.

[0194] <Variation Example 4>

[0195] Figure 16 This is an enlarged cross-sectional view showing the structure of the processing tank 61 in modified example 4 of the embodiment. Figure 17 This is a top view showing an example of the arrangement of the liquid contact member 114 in the treatment tank 61 of Modified Example 4 of the embodiment. Furthermore, Figure 18 This is a perspective view showing an example of the shape of the liquid contact member 114 in Modified Example 4 of the embodiment.

[0196] like Figure 16 As shown, in Modified Example 4, the liquid contact member 114 is configured to block the etching solution L flowing from the inner tank 111 to the outer tank 112. For example, as... Figure 16 As shown, in Modified Example 4, the liquid contact member 114 is positioned above the predetermined liquid level of the outer tank 112 and below the edge portion 111b of the inner tank 111 from which the etching solution L flows out.

[0197] In addition, such as Figure 17 As shown, in Modified Example 4, the liquid contact member 114 is arranged, for example, along the edge portions 111b (left and right edge portions 111b in the figure) on both sides of the inner groove 111 from which the etching solution L flows out. Furthermore, as... Figure 18 As shown, the liquid contact member 114 of Modified Example 4 has a ladder-like shape.

[0198] In variation 4, by arranging the ladder-shaped liquid contact member 114 at the aforementioned location, it is possible to achieve liquid contact in the presence of bubble B (see reference). Figure 4A When the etching solution L flows from the inner tank 111 to the outer tank 112, the etching solution L comes into contact with the hydrophobic liquid contact member 114.

[0199] Therefore, in Modification Example 4, the bubbles B generated in the etching solution L can be defoamed efficiently, and thus, the processing using the etching solution L with added additives can be carried out stably.

[0200] Furthermore, in Modification 4, the liquid contact member 114 can be ladder-shaped. This increases the surface area of ​​the liquid contact member 114, thus enabling more efficient defoaming of bubbles B generated in the etching solution L.

[0201] Furthermore, the shape of the liquid contact member 114 in Modified Example 4 is not limited to a ladder shape. Figure 19 and Figure 20 This is a perspective view showing an example of another shape of the liquid contact member 114 in variation 4 of the embodiment.

[0202] like Figure 19As shown, the liquid contact member 114 in Modified Example 4 can also have a structure with an inclined surface. This increases the surface area of ​​the liquid contact member 114, thus enabling more efficient handling of bubbles B (see reference) generated in the etching solution L. Figure 4A Defoaming is performed.

[0203] In addition, such as Figure 20 As shown, the liquid contact member 114 in Modified Example 4 can also have a lattice-like shape. This increases the surface area of ​​the liquid contact member 114, thus enabling more efficient handling of bubbles B (see reference) generated in the etching solution L. Figure 4A Defoaming is performed.

[0204] In addition, in variation 4, when the etching solution L flows out from the edge portion 111b of three or four sides of the inner tank 111, the liquid contact member 114 can be arranged along the edge portion 111b of three or four sides of the inner tank 111.

[0205] <Variation Example 5>

[0206] Figure 21 This is a perspective view showing the structure of the substrate lifting mechanism 63 in modified example 5 of the embodiment. Figure 21 As shown, the substrate lifting mechanism 63 has a back plate portion 63a and a support portion 63b. The back plate portion 63a is generally flat and extends in the vertical direction. The support portion 63b extends from the back plate portion 63a in the horizontal direction and supports the wafer W in an upright position.

[0207] Figure 22 This is an enlarged cross-sectional view showing the structure of the substrate processing unit 110 in Modified Example 5 of the embodiment. Additionally, Figure 22 The substrate lifting mechanism 63 is shown in the lowered position and the wafer W (refer to) Figure 21 The state of being immersed in etching solution L.

[0208] like Figure 22 As shown, in Modification 5, the liquid contact member 114 is disposed on a portion of the surface of the substrate lifting mechanism 63. For example, in Modification 5, the liquid contact member 114 is disposed on the back plate portion 63a of the substrate lifting mechanism 63 between a position lower than a predetermined liquid level in the inner tank 111 and the upper end of the back plate portion 63a.

[0209] In Modification 5, by arranging the liquid contact member 114 at the aforementioned location, it is possible to achieve a liquid contact in the presence of bubble B (see reference). Figure 4A When the etching solution L flows from the inner tank 111 to the outer tank 112, the etching solution L comes into contact with the hydrophobic liquid contact member 114.

[0210] Therefore, in Modified Example 5, the bubbles B generated in the etching solution L can be defoamed efficiently, and thus, the processing using the etching solution L with added additives can be carried out stably.

[0211] Furthermore, the substrate processing unit 110 in Modification 5 is not limited to the case where a hydrophobic liquid contact member 114 is partially disposed on the surface of the substrate lifting mechanism 63, but may also be a localized hydrophobic surface on the surface of the substrate lifting mechanism 63 itself.

[0212] Therefore, bubbles B can be defoamed locally on the hydrophobic surface of the substrate lifting mechanism 63, thus efficiently defoaming bubbles B generated in the etching solution L. Therefore, according to Modified Example 5, processing using the etching solution L with added additives can be stably implemented.

[0213] The substrate processing apparatus (substrate processing system 1) of the embodiment includes an inner tank 111, an outer tank 112, a cover 113, and a liquid contact member 114. The inner tank 111 has an opening 111a at its upper part, through which a substrate (wafer W) is immersed in a processing solution (etching solution L). The outer tank 112 is disposed outside the inner tank 111 and receives the processing solution (etching solution L) flowing out from the opening 111a. The cover 113 opens and closes the opening 111a. The liquid contact member 114 is hydrophobic and is positioned to contact the processing solution (etching solution L) containing bubbles B as it flows from the inner tank 111 to the outer tank 112. This allows for stable processing using an etching solution L with added additives.

[0214] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the liquid contact member 114 is disposed on the inner wall surface 112a of the outer tank 112. As a result, the bubbles B generated in the etching solution L can be defoamed efficiently.

[0215] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the outer tank 112 is configured to surround the four sides of the inner tank 111. Additionally, liquid contact members 114 are disposed on at least two of the inner wall surfaces 112a of the four sides of the outer tank 112. This allows for more efficient defoaming of the bubbles B generated in the etching solution L.

[0216] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the liquid contact member 114 is plate-shaped and is vertically disposed inside the outer tank 112. This allows for efficient defoaming of the bubbles B generated in the etching solution L.

[0217] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the outer tank 112 is configured to surround the four sides of the inner tank 111. Additionally, the liquid contact member 114 is configured to surround at least two sides of the inner tank 111. This allows for more efficient defoaming of the bubbles B generated in the etching solution L.

[0218] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the liquid contact member 114 is disposed on the bottom surface 113a of the cover 113. As a result, the bubbles B generated in the etching solution L can be defoamed efficiently.

[0219] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the liquid contact member 114 is arranged along the edge portion 111b of the inner tank 111 from which the processing liquid (etching solution L) flows out when viewed from above. As a result, the processing using the etching solution L with added additives can be carried out more stably.

[0220] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the liquid contact member 114 is disposed at the edge portion 111b of the inner tank 111 where the processing liquid (etching liquid L) flows out. As a result, bubbles B generated in the etching liquid L can be defoamed efficiently.

[0221] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the liquid contact member 114 is configured to block the processing liquid (etching liquid L) flowing out from the inner tank 111 to the outer tank 112. As a result, the bubbles B generated in the etching liquid L can be defoamed efficiently.

[0222] Furthermore, the substrate processing apparatus (substrate processing system 1) of the embodiment also includes a substrate lifting mechanism 63 that holds the substrate (wafer W) and feeds it in and out relative to the inner tank 111. Additionally, a liquid contact member 114 is disposed on a portion of the surface of the substrate lifting mechanism 63. This allows for efficient defoaming of bubbles B generated in the etching solution L.

[0223] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the liquid contact member 114 is made of any one of PTFE, PFA, and PCTFE. This allows for stable processing using the etching solution L containing an aqueous phosphoric acid solution.

[0224] The substrate processing apparatus (substrate processing system 1) of the embodiment includes an inner tank 111, an outer tank 112, and a cover 113. The inner tank 111 has an opening 111a at its upper part, through which a substrate (wafer W) is immersed in a processing solution (etching solution L). The outer tank 112 is disposed outside the inner tank 111 and receives the processing solution (etching solution L) flowing out from the opening 111a. The cover 113 opens and closes the opening 111a. Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, at least a portion of the contact surface with the processing solution (etching solution L) containing bubbles B when it flows from the inner tank 111 to the outer tank 112 is hydrophobic. Therefore, processing using an etching solution L with added additives can be stably performed.

[0225] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the processing solution (etching solution L) is phosphoric acid with added alcohol-based additives. This allows for etching of the silicon nitride film in the silicon nitride film and silicon oxide film stacked on the wafer W with a high selectivity.

[0226] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the alcohol is any one of methanol, ethanol, propanol, and isopropanol. Therefore, the additive can be readily added to the phosphoric acid aqueous solution.

[0227] The embodiments of this disclosure have been described above, but this disclosure is not limited to the above embodiments, and various modifications can be made without departing from its spirit. For example, in the above embodiments, an example is shown in which an etching solution L containing an aqueous phosphoric acid solution, a silicon solution, and a precipitation inhibitor is used as the processing solution, but the composition of the processing solution is not limited to this example.

[0228] For example, in this disclosure, organic acids can also be used as processing solutions to process wafer W. Specifically, for example, at least one of acetic acid, formic acid, oxalic acid, and maleic acid can be used as processing solutions to process wafer W.

[0229] Therefore, when an organic acid is used as a treatment solution, it functions as a surfactant, and thus, a large amount of foam is sometimes generated in the treatment solution. Therefore, by applying the technique of this disclosure as described herein, it is possible to efficiently defoam the foam generated in the organic acid treatment solution.

[0230] The embodiments disclosed herein should be considered illustrative in all respects, not restrictive. In fact, the above embodiments can be implemented in a variety of forms. Furthermore, the above embodiments can be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

Claims

1. A substrate processing apparatus, wherein, The substrate processing apparatus includes: The inner tank has an opening at the top, which is used for immersing the substrate in the treatment solution. An outer tank, disposed outside the inner tank, receives the treatment liquid flowing out from the opening; A cover that opens and closes the opening; and A liquid contact member, which is hydrophobic, is positioned to contact the treatment liquid as the foam-containing treatment liquid flows from the inner tank to the outer tank.

2. The substrate processing apparatus according to claim 1, wherein, The liquid contact component is disposed on the inner wall surface of the outer tank.

3. The substrate processing apparatus according to claim 2, wherein, The outer groove is configured to surround the four sides of the inner groove. The liquid contact member is disposed on the inner wall surface of at least two of the four sides of the outer tank.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The liquid contact component is plate-shaped and is vertically installed inside the outer tank.

5. The substrate processing apparatus according to claim 4, wherein, The outer groove is configured to surround the four sides of the inner groove. The liquid contact member is configured to surround at least two sides of the inner tank.

6. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The liquid contact component is disposed on the bottom surface of the cover.

7. The substrate processing apparatus according to claim 6, wherein, The liquid contact member is arranged along the edge of the inner tank from which the treatment liquid flows out when viewed from above.

8. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The liquid contact member is disposed at the edge of the inner tank where the treatment liquid flows out.

9. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The liquid contact member is configured to block the processing liquid flowing from the inner tank to the outer tank.

10. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The substrate processing apparatus further includes a substrate lifting mechanism that holds the substrate and feeds the substrate in and out relative to the inner groove. The liquid contact member is disposed on a portion of the surface of the substrate lifting mechanism.

11. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The liquid contact component is made of any one of PTFE (polytetrafluoroethylene), PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer), and PCTFE (polychlorotrifluoroethylene).

12. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The treatment solution is phosphoric acid with added alcohol-based additives.

13. The substrate processing apparatus according to claim 12, wherein, The alcohol is any one of methanol, ethanol, propanol, and isopropanol.

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