processing device

Abstract

The present invention relates to a processing apparatus. A technique capable of improving in-plane uniformity and inter-plane uniformity of film thickness is provided. A processing apparatus of a technical solution of the present disclosure includes: a processing container that is a substantially cylindrical shape, in which a plurality of substrates are housed as multiple layers with a space interval in a length direction of the processing container; and a gas nozzle that extends in the length direction of the processing container, in which a plurality of gas holes that eject gas into the processing container are provided with a space interval in a length direction of the gas nozzle, the gas holes are arranged every other one with respect to the plurality of substrates housed as multiple layers, and the gas holes eject gas toward a side surface of the corresponding substrate.

Description

Technical Field

[0001] This disclosure relates to a processing apparatus. Background Technology

[0002] A film-forming apparatus is known to have a gas dispersion nozzle that extends vertically along the inner sidewall of a cylindrical processing container and has a plurality of gas ejection holes formed along a length corresponding to the wafer support area of ​​the wafer boat (for example, see Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2011-135044 Summary of the Invention

[0004] The problem the invention aims to solve

[0005] This disclosure provides a technique that can improve the in-plane and inter-plane uniformity of film thickness.

[0006] Solution for solving the problem

[0007] A processing apparatus according to a present disclosure includes: a processing container, which is generally cylindrical in shape, and a plurality of substrates are housed in a multilayer structure with open gaps along the length of the processing container; and a gas nozzle extending along the length of the processing container, wherein a plurality of gas holes are provided at open gaps along the length of the gas nozzle for ejecting gas into the processing container, the gas holes being arranged at intervals relative to the plurality of substrates housed in the multilayer structure, and the gas holes ejecting gas toward the side of the corresponding substrate.

[0008] The effects of the invention

[0009] According to this disclosure, the in-plane uniformity and inter-plane uniformity of film thickness can be improved. Attached Figure Description

[0010] Figure 1 This is a schematic diagram illustrating an example of a processing apparatus for an implementation method.

[0011] Figure 2 This is a schematic diagram showing an example of the configuration of a gas nozzle.

[0012] Figure 3 This is a diagram illustrating an example of the positional relationship between the gas pores and the wafer.

[0013] Figure 4 It is a diagram used to illustrate the simulation conditions.

[0014] Figure 5 This is a graph showing the analysis results of the gas velocity distribution within the wafer plane.

[0015] Figure 6 This is a graph showing the analysis results of the gas velocity distribution within the wafer plane.

[0016] Figure 7 This is a graph showing the analysis results of the gas velocity distribution within the wafer plane.

[0017] Figure 8 This is a graph showing the analysis results of the gas velocity distribution between wafers.

[0018] Figure 9 This is a graph showing the analytical results of the active species concentration distribution between wafers.

[0019] Figure 10 This is another example of the positional relationship between the gas pores and the wafer. Detailed Implementation

[0020] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the drawings, the same or corresponding components or parts are labeled with the same or corresponding reference numerals, and repeated descriptions are omitted.

[0021] [Processing device]

[0022] Reference Figure 1 and Figure 2 Here is an example of a processing apparatus for an embodiment. Figure 1 This is a schematic diagram illustrating an example of a processing apparatus for an implementation method. Figure 2 This is a diagram illustrating an example of the configuration of a gas nozzle.

[0023] The processing device 1 includes a processing container 10, a gas supply unit 30, an exhaust unit 50, a heating unit 70, and a control unit 90.

[0024] The processing container 10 includes an inner tube 11 and an outer tube 12. The inner tube 11, also referred to as the inner layer tube, is formed into a generally cylindrical shape with a top and an open lower end. The top 11a of the inner tube 11 is, for example, flat. The outer tube 12, also referred to as the outer layer tube, is formed into a generally cylindrical shape with a top and an open lower end that covers the outside of the inner tube 11. The inner tube 11 and the outer tube 12 are arranged coaxially to form a double-tube structure. The inner tube 11 and the outer tube 12 are, for example, made of a heat-resistant material such as quartz.

[0025] On one side of the inner tube 11, a receiving portion 13 for accommodating a gas nozzle is formed along its length direction (vertical direction). For the receiving portion 13, a portion of the side wall of the inner tube 11 protrudes outward to form a protrusion 14, and the receiving portion 13 is formed inside the protrusion 14.

[0026] Facing the receiving section 13, a rectangular exhaust slit 15 is formed on the side wall opposite to the inner tube 11 along its length (vertical direction). The exhaust slit 15 exhausts the gas inside the inner tube 11. The length of the exhaust slit 15 is formed to extend upward and downward in the same or longer direction as the boat 16 described later.

[0027] The processing container 10 houses the boat 16. The boat 16 holds multiple substrates at intervals in the vertical direction, making them substantially horizontal. The substrates may be, for example, semiconductor wafers (hereinafter referred to as "wafer W").

[0028] The lower end of the processing container 10 is supported by a generally cylindrical manifold 17, for example, made of stainless steel. A flange 18 is formed at the upper end of the manifold 17, and the lower end of the outer tube 12 is disposed on and supported by the flange 18. A sealing member 19, such as an O-ring, is placed between the lower end of the outer tube 12 and the flange 18 to make the interior of the outer tube 12 airtight.

[0029] A ring-shaped support portion 20 is provided on the inner wall of the upper part of the manifold 17. The support portion 20 supports the lower end of the inner tube 11. A cover 21 is airtightly installed at the opening at the lower end of the manifold 17 by means of a sealing member 22 such as an O-ring. The cover 21 airtightly seals the opening at the lower end of the processing container 10, i.e., the opening of the manifold 17. The cover 21 is, for example, made of stainless steel.

[0030] A rotating shaft 24, supporting the boat 16 for rotation, is provided through the center of the cover 21 by means of a magnetic fluid seal 23. The lower part of the rotating shaft 24 is supported by the arm 25a of the lifting mechanism 25, which is composed of a boat lifting mechanism, so that it can rotate freely.

[0031] A rotating plate 26 is provided at the upper end of the rotating shaft 24. A boat 16 for holding the wafer W is placed on the rotating plate 26 by means of a quartz insulated stage 27. Therefore, by raising and lowering the lifting mechanism 25, the cover 21 and the boat 16 move up and down together, allowing the boat 16 to be inserted and removed relative to the processing container 10.

[0032] The gas supply unit 30 is located in the manifold 17. The gas supply unit 30 has a plurality of (e.g., 7) gas nozzles 31 to 37.

[0033] Multiple gas nozzles 31-37 are arranged in a row circumferentially within the receiving portion 13 of the inner tube 11. Each gas nozzle 31-37 is disposed within the inner tube 11 along its length and is supported such that its base is bent in an L-shape and passes through the manifold 17. Multiple gas holes 31a-37a are provided at predetermined intervals along the length of each gas nozzle 31-37. The gas holes 31a-37a are, for example, oriented towards the center C side (wafer W side) of the inner tube 11.

[0034] Each gas nozzle 31-37 ejects various gases, such as raw material gases, reaction gases, etching gases, and purge gases, approximately horizontally towards the wafer W from multiple gas holes 31a-37a. The raw material gas may be, for example, a gas containing silicon (Si) or a metal. The reaction gas is used to react with the raw material gas to generate reaction products; for example, it may be a gas containing oxygen or nitrogen. The etching gas is used to etch various films; for example, it may be a gas containing halogens such as fluorine, chlorine, or bromine. The purge gas is used to purge any remaining raw material or reaction gases within the processing container 10; for example, it may be an inactive gas. Further details about the gas nozzles 31-37 will be described below.

[0035] The exhaust section 50 exhausts the gas that exits from the inner tube 11 via the exhaust slit 15 and from the gas outlet 28 via the space P1 between the inner tube 11 and the outer tube 12. The gas outlet 28 is formed on the upper side wall of the manifold 17 and above the support 20. An exhaust passage 51 is connected to the gas outlet 28. A pressure regulating valve 52 and a vacuum pump 53 are sequentially provided in the exhaust passage 51, enabling the exhaust of gas from the processing container 10.

[0036] A heating element 70 is disposed around the outer tube 12. The heating element 70 is, for example, disposed on a base plate (not shown). The heating element 70 has a generally cylindrical shape so as to cover the outer tube 12. The heating element 70 includes, for example, a heating element for heating the wafer W inside the processing container 10.

[0037] The control unit 90 controls the operation of each part of the processing device 1. The control unit 90 may be, for example, a computer. The computer program that performs the operation of each part of the processing device 1 is stored in a storage medium. The storage medium may be, for example, a floppy disk, optical disk, hard disk, flash memory, DVD, etc.

[0038] [Gas Nozzle]

[0039] Reference Figure 3 This is an example illustrating the positional relationship between the gas nozzle orifice and the wafer. Gas nozzle 34 will be used as an example in the following description, but other gas nozzles 31-33 and 35-37 may have the same structure as gas nozzle 34.

[0040] like Figure 3 As shown, the gas nozzle 34 extends along the length of the inner tube 11. Multiple gas holes 34a1 to 34a are provided at predetermined intervals along the length of the gas nozzle 34. n Furthermore, n is an integer greater than or equal to 1. Multiple gas orifices 34a1 to 34a n For example, towards the center C side (wafer W side) of the inner tube 11. Multiple gas holes 34a1 to 34a nCompared to the multiple wafers W1 to W1 housed in multiple layers within the inner tube 11 n They are arranged at every other position and oriented toward their corresponding wafers W1 to W2. n Gas is ejected from the side. Thus, multiple gas holes 34a1 to 34a... n The gas holes 34a are arranged such that the spacing H2 between adjacent gas holes is twice the spacing H1 between adjacent wafers W, and are oriented towards the corresponding wafers W1 to W2. n Gas was ejected from the side.

[0041] Specifically, the gas hole 34a1 is positioned at the same height as wafer W1, opposite to the side surface of wafer W1. Thus, gas is ejected from the gas hole 34a1 toward the side surface of wafer W1. The gas ejected from the gas hole 34a1 collides with the side surface of wafer W1, and is diverted between wafers W0 and W1, and between wafers W1 and W2. That is, approximately the same flow rate of gas is supplied to the upper surface of wafer W1 and the upper surface of wafer W2.

[0042] Furthermore, the gas port 34a2 is positioned at the same height as wafer W3, opposite to the side surface of wafer W3. Thus, gas is ejected from the gas port 34a2 toward the side surface of wafer W3. The gas ejected from the gas port 34a2 collides with the side surface of wafer W3, and is diverted between wafers W2 and W3, and between wafers W3 and W4. That is, approximately the same flow rate of gas is supplied to the upper surface of wafer W3 and the upper surface of wafer W4.

[0043] Furthermore, the gas port 34a3 is positioned at the same height as wafer W5, opposite to the side surface of wafer W5. Thus, gas is ejected from the gas port 34a3 toward the side surface of wafer W5. The gas ejected from the gas port 34a3 collides with the side surface of wafer W5, and is diverted between wafers W4 and W5, and between wafers W5 and W6. That is, approximately the same flow rate of gas is supplied to the upper surface of wafer W5 and the upper surface of wafer W6.

[0044] Similarly, gas pore 34a n Configured with wafer W 2n－1 At the same height, with wafer W 2n－1 The sides are opposite each other. Therefore, gas pore 34a n Towards the wafer W 2n－1 Gas is ejected from the side. From gas port 34a n The ejected gas and the wafer W 2n－1 The side collision, and towards the wafer W 2n－2 With wafer W 2n－1 Between and wafer W 2n－1 With wafer W 2n The flow is split between them. That is, to the wafer W. 2n－1 The upper surface and wafer W2n The upper surface is supplied with approximately the same flow rate of gas.

[0045] As explained above, from gas pores 34a1 to 34a n The ejected gas and the wafer W1~W n The gas is diverted between the upper and lower wafers W by lateral collisions. Therefore, even if the spacing H2 between adjacent gas holes 34a is configured to be twice the spacing H1 between adjacent wafers W, it is possible to divert gas to all wafers W1 to W2. n Gas is supplied evenly. As a result, the wafer W1 to W2 can be reduced. n This reduces processing deviations and improves inter-surface uniformity. Furthermore, compared to multiple wafers W1 to W2... n When gas holes are provided separately, the number of gas holes is halved, thus increasing the gas flow rate from each gas hole. This increases the gas flow rate at the center of the wafer. Consequently, the deviation in gas flow rate between the wafer center and wafer edges is reduced, improving in-plane uniformity of the processing.

[0046] [Handling Method]

[0047] As an example of the processing method for implementing the method, the use of Figure 1 and Figure 2 The processing apparatus 1 shown describes a method for forming a silicon oxide film on a wafer W using atomic layer deposition (ALD). Furthermore, in the processing apparatus 1, gas nozzles 31-33 and 35-37 are also configured to... Figure 3 The structure of the gas nozzle 34 shown is the same and will be described.

[0048] First, the control unit 90 controls the lifting mechanism 25 to send the boat 16 holding multiple wafers W into the processing container 10, and uses the cover 21 to airtightly seal the opening at the lower end of the processing container 10, thereby sealing it.

[0049] Next, the control unit 90 repeats the cycle including the process of supplying raw material gas S1, the process of purging S2, the process of supplying reaction gas S3, and the process of purging S4 a predetermined number of times, thereby forming a silicon oxide film with a desired film thickness on multiple wafers W.

[0050] In process S1, silicon-containing gas, which serves as a raw material gas, is ejected into the processing container 10 from at least one of the seven gas nozzles 31 to 37, thereby causing the silicon-containing gas to be adsorbed onto multiple wafers W.

[0051] In step S2, residual silicon-containing gases and the like are removed from the processing container 10 by repeatedly performing gas replacement and vacuum suction cyclic purging. Gas replacement is the action of supplying purging gas into the processing container 10 from at least one of the seven gas nozzles 31 to 37. Vacuum suction is the action of venting the processing container 10 by using a vacuum pump 53.

[0052] In process S3, an oxidizing gas, which is a reaction gas, is ejected into the processing container 10 from at least one of the seven gas nozzles 31 to 37, thereby oxidizing the silicon raw material gas adsorbed on the multiple wafers W.

[0053] In step S4, repeated gas replacement and vacuum suction are used to purge the remaining oxidizing gases in the processing container 10. Step S4 can be the same as step S2.

[0054] After the ALD cycle, including processes S1 to S4, is repeated a predetermined number of times, the control unit 90 controls the lifting mechanism 25 to send the boat 16 out of the processing container 10.

[0055] As another example of the processing method for implementing the method, the use of Figure 1 and Figure 2 The processing apparatus 1 shown is used to form a silicon film on a wafer W by chemical vapor deposition (CVD).

[0056] First, the control unit 90 controls the lifting mechanism 25 to send the boat 16 holding multiple wafers W into the processing container 10, and uses the cover 21 to airtightly seal the opening at the lower end of the processing container 10, thereby sealing it.

[0057] Next, the control unit 90 ejects silicon-containing gas as a raw material gas into the processing container 10 from at least one of the seven gas nozzles 31 to 37, thereby forming a silicon film with a desired film thickness on the wafer W.

[0058] Next, the control unit 90 controls the lifting mechanism 25 to send the boat 16 out of the processing container 10.

[0059] According to the embodiments described above, when the raw material gas and the reaction gas are ejected into the inner tube 11, the reaction gas is directed relative to the multiple wafers W1 to W2 housed in the inner tube 11 in multiple layers. n Multiple gas holes 31a to 37a, arranged at every other point, face the corresponding wafers W1 to W. n Gas is ejected from the side of the wafer. Thus, the gas ejected from gas holes 31a-37a interacts with the wafers W1-W1. nThe side impact causes flow diversion between the upper and lower wafers W. Therefore, even if the spacing H2 between adjacent gas holes 34a is configured to be twice the spacing H1 between adjacent wafers W, it is possible to supply gas to all wafers W1 to W2. n Gas is supplied evenly. As a result, the wafer W1 to W2 can be reduced. n This reduces processing deviations and improves inter-surface uniformity. Furthermore, compared to multiple wafers W1 to W2... n When gas holes are provided separately, the number of gas holes is halved, thus increasing the gas flow rate from each gas hole. This increases the gas flow rate at the center of the wafer. Consequently, the deviation in gas flow rate between the wafer center and wafer edges is reduced, improving in-plane uniformity of the processing.

[0060] [Simulation Results]

[0061] First of all, Figure 1 and Figure 2 In the processing apparatus 1 shown, the velocity distribution of the gas ejected from the gas nozzle 34 through the gas orifice 34a into the inner tube 11 on the wafer W was simulated using thermofluid analysis. In this simulation, three levels X1 to X3 with altered configurations of the gas orifice 34a were analyzed.

[0062] Figure 4 This is a diagram used to illustrate the simulation conditions. In Figure 4 In the middle, starting from the left, the configuration of gas holes 34a for levels X1, X2, and X3 is shown in sequence.

[0063] Level X1 is a condition where the number of gas holes 34a is the same as the number of wafers W, and each gas hole 34a is positioned at the midpoint between adjacent wafers W in the vertical direction.

[0064] Level X2 is the condition that the spacing is increased to half the number of wafers W and each gas hole 34a is positioned at the midpoint between adjacent wafers W in the vertical direction.

[0065] Level X3 is the condition where the spacing is increased to half the number of gas holes 34a and each gas hole 34a is positioned at the same height as the wafer W.

[0066] Figure 5 This is a graph showing the analysis results of the gas velocity distribution within the wafer plane, with values ​​for levels X1 to X3 respectively. Figure 4 The diagram shows the in-plane distribution of gas flow velocity on three wafers W1 to W3 arranged continuously in the height direction. For each in-plane distribution, the 6 o'clock direction indicates the direction in which the gas nozzle 34 is positioned, and the 12 o'clock direction indicates the direction in which the exhaust slit 15 is positioned.

[0067] Figure 6 This is a graph showing the analysis results of the gas velocity distribution within the wafer plane, illustrating... Figure 5 The velocity of the gas distributed in the plane along a straight line from the 6 o'clock direction to the 12 o'clock direction. Figure 6 (a)~ Figure 6 In (c), the horizontal axis represents position [mm], and the vertical axis represents gas velocity [m / s]. Regarding position, -150mm is the outer end of wafer W at the 6 o'clock direction, 0mm is the center of wafer W, and +150mm is the outer end of wafer W at the 12 o'clock direction. Figure 6 (a) represents the result of leveling X1. Figure 6 (b) represents the result of leveling X2. Figure 6 (c) represents the result of leveling X3.

[0068] Figure 7 This is a graph showing the analysis results of the gas velocity distribution within the wafer plane. It illustrates the distribution across wafers W1 at level X1, W1 and W2 at levels X2, and W1 at level X3. Figure 5 The results were compared between the gas flow velocities along a straight line from the 6 o'clock direction to the 12 o'clock direction within the plane. Figure 7 In the diagram, the horizontal axis represents position [mm], and the vertical axis represents gas velocity [m / s]. Regarding position, -150mm is the outer end of wafer W at the 6 o'clock direction, 0mm is the center of wafer W, and +150mm is the outer end of wafer W at the 12 o'clock direction.

[0069] like Figures 5-7 As shown, at level X1, gas is supplied to all wafers W1 to W3 under the same environmental conditions, resulting in a uniform gas velocity distribution across all wafers W1 to W3. At level X2, the gas flow rate supplied to the space above wafer W1 and the gas flow rate supplied to the space between wafers W2 and W3 are doubled compared to level X1. Therefore, the gas velocity on wafers W1 and W3 is higher, but the gas velocity on wafer W2 is lower. Thus, at level X2, there is a deviation in gas velocity between wafers W. At level X3, the gas velocity distribution across all wafers W1 to W3 is uniform, and gas is supplied to wafers W1 to W3 at a higher velocity than at level X1.

[0070] Figure 8 It is a graph showing the analysis results of the gas velocity distribution between wafers, and it is a graph showing the gas velocity distribution obtained through analysis in a longitudinal section. Figure 8 (a) represents the result of leveling X1. Figure 8 (b) represents the result of leveling X2. Figure 8 (c) represents the result of leveling X3. Figure 8 (a)~ Figure 8 In (c), the left end is the position where the gas nozzle 34 is positioned, and the right end is the position where the exhaust slit 15 is positioned. Additionally, in Figure 8 (a)~ Figure 8 In (c), arrows indicate the direction of gas ejection.

[0071] like Figure 8 (a) and Figure 8 As shown in (c), it can be seen that, at level X3, the region with higher gas flow rate extends to the center of wafer W compared to level X1. Based on this result, it is believed that by increasing the spacing to half the number of gas holes 34a and positioning each gas hole 34a at the same height as wafer W, the deviation in gas flow rate between the center and the ends of wafer W can be reduced, thereby improving the in-plane uniformity of gas flow rate.

[0072] In addition, such as Figure 8 As shown in (b), in the case of level X2, there is a significant difference in the gas flow rate at the center of wafer W between the space between wafers W including the height position where the gas hole 34a is located and the space between adjacent wafers W above and below that space. This is because the gas hole 34a is positioned in the middle between adjacent wafers W in the vertical direction, so the gas ejected from the gas hole 34a directly enters the space between wafers W. As a result, the presence or absence of the gas hole 34a has a greater impact. In contrast, in the case of level X3, the gas hole 34a is positioned at the same height position as the wafer W, so the gas ejected from the gas hole 34a collides with the side of the wafer W and is diverted into the space between wafers W above and below that wafer W. As a result, even if the spacing is increased to half the number of wafers W, the presence or absence of the gas hole 34a has a smaller impact. Furthermore, at level X3, the number of gas holes 34a is half that of level X1, resulting in a higher gas velocity ejected from each gas hole 34a. Therefore, at level X3, the gas velocity at the center of wafer W is higher than that at level X1. Based on this result, it is believed that by increasing the spacing to half the number of gas holes 34a and positioning each gas hole 34a at the same height as wafer W, both in-plane and inter-plane uniformity of gas velocity can be improved.

[0073] Next, in Figure 1 and Figure 2In the processing apparatus 1 shown, a simulation was performed using thermofluid analysis to analyze the concentration distribution of reactive species on the wafer W when gas is ejected from the gas nozzle 34 through the gas orifice 34a into the inner tube 11. The concentration distribution of reactive species was considered as the object of analysis because it takes into account the concentration of reactive species generated by the thermal decomposition of the raw material gas, which contributes to the thickness of a predetermined film formed on the wafer W. In this simulation, two levels, namely level X2 (refer to...), were analyzed with variations in the configuration of the gas orifice 34a. Figure 4 (b) and level X3 (refer to) Figure 4 The analysis was conducted on (c).

[0074] Figure 9 It is a graph showing the analytical results of the active species concentration distribution between wafers, and it is a graph showing the active species concentration distribution obtained through analysis in a longitudinal section. Figure 9 (a) represents the result of leveling X2. Figure 9 (b) represents the result of leveling X3. Figure 9 (a) and Figure 9 In (b), the left end is the position where the gas nozzle 34 is positioned, and the right end is the position where the exhaust slit 15 is positioned. Additionally, in Figure 9 (a) and Figure 9 In (b), arrows indicate the direction of gas ejection.

[0075] like Figure 9 As shown in (a), at level X2, the concentration distribution of reactive species differs considerably between the space between wafers W, including the height position where the gas pore 34a is positioned, and between the spaces between adjacent wafers W above and below in that space. In contrast, as... Figure 9 As shown in (b), at level X3, the concentration distribution of reactive species is approximately the same on all wafers W. Based on this result, it is believed that by increasing the spacing to half the number of gas holes 34a and placing each gas hole 34a at the same height as wafer W, the inter-plane uniformity of the concentration of reactive species on wafer W can be improved.

[0076] It should be considered that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The above embodiments may also be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0077] In the above embodiments, a plurality of gas holes 34a provided in a gas nozzle 34 are described in a per-layer arrangement of one of the plurality of wafers W housed in multiple layers, but this disclosure is not limited to this. For example, any one of the plurality of gas holes provided in the plurality of gas nozzles may be provided in a per-layer arrangement of one of the plurality of wafers W housed in multiple layers. This can suppress the pressure rise inside the gas nozzle. As a result, excessive decomposition of the feed gas inside the gas nozzle and film deposition can be suppressed. In addition, by using a plurality of gas nozzles, the number of gas holes in each gas nozzle can be reduced, and therefore the deviation of gas flow rate in the longitudinal direction of the gas nozzle is smaller.

[0078] Figure 10 This is another example of the positional relationship between the gas pores and the wafer. Figure 10 In the example shown, each of the multiple wafers W housed in multiple layers is provided with one of the multiple gas holes 110a, 120a located at one of the two gas nozzles 110, 120. That is, the multiple gas holes 110a are arranged such that the spacing H3 between adjacent gas holes 110a is four times the spacing H1 between adjacent wafers W. Similarly, the multiple gas holes 120a are arranged such that the spacing H4 between adjacent gas holes 120a is four times the spacing H1 between adjacent wafers W. Specifically, gas hole 110a1 is positioned at the same height as wafer W1, facing the side of wafer W1. Thus, gas hole 110a1 ejects gas toward the side of wafer W1. Gas hole 120a1 is positioned at the same height as wafer W3, facing the side of wafer W3. Thus, gas hole 120a1 ejects gas toward the side of wafer W3. Gas hole 110a2 is positioned at the same height as wafer W5, facing the side of wafer W5. Therefore, gas is ejected from the gas port 110a2 toward the side of wafer W5. Gas port 120a2 is positioned at the same height as wafer W7, opposite to the side of wafer W7. Therefore, gas is ejected from the gas port 120a2 toward the side of wafer W7.

[0079] In the above embodiments, the case of an L-shaped gas nozzle has been described as an example, but this disclosure is not limited to this. For example, the gas nozzle may also be a straight pipe that extends along the length of the inner tube on the inner sidewall and is supported by inserting its lower end into a nozzle support (not shown).

[0080] In the above embodiments, the processing apparatus is described as a device that supplies gas from a gas nozzle arranged along the length of the processing container and discharges gas from an exhaust slit arranged opposite to the gas nozzle; however, this disclosure is not limited to this. For example, the processing apparatus may also be a device that supplies gas from a gas nozzle arranged along the length of a vessel and discharges gas from a gas outlet arranged above or below the vessel.

[0081] In the above embodiments, the processing container is described as having a double-tube structure with an inner tube and an outer tube, but this disclosure is not limited to this. For example, the processing container may also be a container with a single-tube structure.

[0082] In the above embodiments, the case where the processing apparatus is a non-plasma apparatus has been described, but this disclosure is not limited thereto. For example, the processing apparatus may also be a plasma apparatus such as a capacitively coupled plasma apparatus or an inductively coupled plasma apparatus.

Claims

1. A processing apparatus, wherein, The processing device includes: A processing container, which is generally cylindrical in shape, houses multiple substrates in a multilayer configuration with open gaps along its length; and A gas nozzle extends along the length of the processing container, and a plurality of gas holes are provided at intervals along the length of the gas nozzle to spray gas into the processing container. Each of the gas holes is arranged at every other space relative to the plurality of substrates housed in a multilayer structure. Each of the gas holes ejects gas toward the corresponding side of the substrate. The gas holes are positioned at the same height as the corresponding substrate.

2. The processing apparatus according to claim 1, wherein, The gas vent faces the center of the processing container.

3. The processing apparatus according to claim 1 or 2, wherein, The processing container is provided with an exhaust slit opposite to the gas hole to discharge the gas inside the processing container.

4. A processing apparatus, wherein, The processing device includes: A processing container, which is generally cylindrical in shape, houses multiple substrates in a multilayer configuration with open gaps along its length; and Multiple gas nozzles extend along the length of the processing container, and each nozzle has multiple gas holes spaced apart along its length to eject gas into the processing container. Each of the plurality of gas holes in the plurality of gas nozzles is disposed in a manner that alternates between each of the plurality of gas holes in the plurality of gas nozzles and the plurality of substrates housed in multiple layers. Each of the plurality of gas holes ejects gas toward the corresponding side of the substrate. The gas holes are positioned at the same height as the corresponding substrate.

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