A method for passivating inorganic perovskite solar cells with inorganic materials

Abstract

The present invention discloses a method for passivating inorganic perovskite solar cells with inorganic materials, and relates to the technical field of perovskite solar cells. The present invention proposes spin-coating a nickel iodide isopropanol solution on the surface of an inorganic perovskite film, and the spin-coated perovskite film does not require further annealing. On the one hand, the iodine in the nickel iodide can fill the iodine vacancies in the inorganic perovskite, which can effectively reduce the deep energy level defects caused by iodine vacancies, reduce non-radiative recombination at the interface, and improve the efficiency of the inorganic perovskite solar cell. On the other hand, based on this method to passivate the surface defects of the inorganic perovskite film, the required nickel iodide concentration is only 0.225 mg / mL, which is far lower than the concentration required for other organic materials to achieve the same passivation effect.

Description

Technical Field

[0001] The present invention belongs to the technical field of perovskite solar cells, and in particular relates to a method for passivating inorganic perovskite solar cells with inorganic materials. Background Art

[0002] Over the past decade, perovskite materials have made rapid progress due to their excellent optoelectronic properties, with the photoelectric conversion efficiency increasing from 3.8% to 25.5%. The highest efficiency devices are all based on organic-inorganic hybrid perovskites, but due to the presence of methylamine and formamidinium ions, they cannot operate at high temperatures.

[0003] Inorganic perovskites, due to their lack of organic components, have inherent advantages in thermal stability. Furthermore, with a band gap greater than 1.68 eV, they are ideal top cell materials for crystalline silicon tandem solar cells. Over the past six years, inorganic perovskites have experienced rapid development, with efficiency increasing to 20.8%. However, this efficiency still lags behind that of organic-inorganic hybrid perovskite solar cells of the same band gap, with defects at the surface and grain boundaries being the primary factors affecting their efficiency. Because polycrystalline inorganic perovskite films prepared by the solution method are prone to the formation of iodine vacancies, non-radiative recombination caused by deep-level defects is the primary factor affecting their efficiency and stability. Therefore, improving the defect state density at the surface and grain boundaries of inorganic perovskite films is crucial.

[0004] Currently, high-efficiency perovskite solar cells usually require surface passivation treatment on the perovskite surface. However, surface passivation materials are currently mainly based on organic substances, such as phenylethylamine iodine. The inherent thermal instability of organic substances themselves leads to great challenges in the stability of the device under service conditions.

[0005] In summary, the shortcomings of existing perovskite solar cells based on organic surface passivation materials can be summarized as follows: 1) The inherent thermal instability of organic passivation materials is detrimental to the long-term stability of perovskite solar cells. 2) Organic passivation materials generally require high concentrations to achieve effective passivation. Excessive organic salts can easily affect the efficient transport of charge carriers, adversely affecting device performance. Summary of the Invention

[0006] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art and provide a method for passivating inorganic perovskite solar cells with inorganic materials.

[0007] To achieve the purpose of the present invention, we propose a method for surface passivation of defects by spin-coating a low-concentration nickel iodide solution on the surface of an inorganic perovskite film. This method can optimize the interface and inhibit non-radiative recombination, thereby significantly improving the open circuit voltage and fill factor of inorganic perovskite cells.

[0008] Technical solution of the present invention

[0009] A method for passivating an inorganic perovskite solar cell with an inorganic material comprises: after the inorganic perovskite thin film of the inorganic perovskite solar cell is prepared and annealed, the inorganic perovskite thin film is passivated using a spin coating method using a nickel iodide isopropanol solution with a concentration of less than 0.3 mg / mL. The spin coating speed for the passivation treatment is 3000-5000 r / min, the coating time is 20-60 seconds, and the thickness is 1-10 nm.

[0010] The structure of the passivated inorganic perovskite solar cell includes, from bottom to top, a glass / ITO substrate, a tin dioxide electron transport layer, an inorganic perovskite light absorption layer, a nickel iodide passivation layer, a hole transport layer, and a metal electrode.

[0011] The glass / ITO substrate is transparent conductive glass.

[0012] The tin dioxide electron transport layer is prepared by a spin coating-annealing process, the annealing process is carried out at 150° C., and the thickness is 20-50 nm.

[0013] The perovskite light absorption layer material is CsPbI 3-x Br x (0≤x≤1), prepared by solution spin coating process, the spin-coated inorganic perovskite film is annealed at 180° C., and has a thickness of 200-400 nm.

[0014] The hole transport layer is made of Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene), which is prepared by spin coating and has a thickness of 100-200 nm.

[0015] The metal electrode material is gold, which is prepared by a thermal evaporation process and has a thickness of 60-100 nm.

[0016] Advantages and beneficial effects of the present invention:

[0017] 1. The present invention proposes a method for passivating inorganic perovskite solar cells with inorganic materials. By using a solution spin coating method, the defects on the surface and grain boundaries of the inorganic perovskite film can be effectively improved, and non-radiative recombination can be reduced.

[0018] 2. At the same time, a method for passivating inorganic perovskite solar cells with inorganic materials has been developed. By optimizing the concentration of nickel iodide solution and the spin coating speed, inorganic perovskite solar cells with very high photoelectric conversion efficiency have been obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic structural diagram of an inorganic perovskite solar cell passivated by an inorganic material according to a specific embodiment of the present invention;

[0020] In the figure, 10 is a glass / ITO substrate, 20 is a SnO2 electron transport layer film, 30 is an inorganic perovskite film, 40 is a nickel iodide passivation layer, 50 is a hole transport layer, and 60 is a metal gold electrode;

[0021] Figure 2 1 is the IV characteristic curve of the inorganic perovskite solar cell according to the specific embodiment 1 of the present invention;

[0022] Figure 3 The IV characteristic curve of the inorganic perovskite solar cell of the specific embodiment 2 proposed by the present invention is

[0023] Figure 4 This is the IV characteristic curve of the inorganic perovskite solar cell of the specific embodiment 3 proposed by the present invention.

[0024] Figure 5 1 is the IV characteristic curve of the inorganic perovskite solar cell according to the specific embodiment 4 of the present invention;

[0025] Figure 6 1 is the IV characteristic curve of the inorganic perovskite solar cell according to the specific embodiment 5 of the present invention;

[0026] Figure 7 1 is the IV characteristic curve of the inorganic perovskite solar cell according to specific embodiment 6 of the present invention;

[0027] Figure 8 7 is the IV characteristic curve of the inorganic perovskite solar cell according to the specific embodiment of the present invention;

[0028] Figure 9 The present invention provides a flow chart of the method for preparing inorganic perovskite solar cells passivated with inorganic materials. DETAILED DESCRIPTION

[0029] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0030] Example 1:

[0031] The present invention provides a method for passivating inorganic materials to enhance inorganic perovskite solar cells. The method comprises spin-coating a low-concentration nickel iodide isopropanol solution on the surface of an annealed inorganic perovskite film, thereby effectively passivating surface defects of the inorganic perovskite film, improving the quality of the inorganic perovskite film, and thereby increasing the photoelectric conversion efficiency of the inorganic perovskite solar cell.

[0032] Step 1: Clean the glass / ITO substrate 10 with detergent, acetone and isopropyl alcohol for 10 minutes each, wherein the sheet resistance of the ITO layer is 7-15 ohms.

[0033] Step 2: Blow the cleaned glass / ITO substrate dry with nitrogen, UV treat it for 10 minutes, then spin-coat the SnO2 nanoparticle solution on the ITO / glass substrate, adjust the thickness of the SnO2 electron transport layer film 20 to 30nm by controlling the spin-coating speed, and then place it on a hot plate at 150°C for annealing for 30 minutes. After annealing, UV treat it for 10 minutes for standby use. This process is carried out in air.

[0034] Step 3: Spin coat 0.6M CsPbI in a nitrogen glove box using a one-step method 3-x Br x The perovskite solution, the solvent is a mixed solution of DMF:DMSO (4:1), the spin coating speed is 2500 r / min and the time is 60 s, and then it is placed on a hot plate at 180° C. for annealing for 10 minutes. The thickness of the inorganic perovskite film 30 is about 300 nm.

[0035] Step 4: Spin-coat a nickel iodide passivation layer 40 on the perovskite film using a spin-coating solution method. Nickel iodide is dissolved in isopropyl alcohol at a concentration of 0.15 mg / mL. The spin-coating speed is 3000 r / min, the time is 30 s, and the thickness is about 2 nm.

[0036] Step 5: Use the spin coating method to spin-coat a hole transport layer 50% Spiro-OMeTAD solution on the nickel iodide passivation layer. Spiro-OMeTAD is dissolved in chlorobenzene with a concentration of 72.3 mg / mL. The spin coating speed is 3000 r / min and the time is 30 s. The thickness is about 150 nm. Then place it in an oxygen glove box for oxidation for about two hours.

[0037] Step 6: Take out the oxidized device and evaporate a gold electrode 60 on the hole transport layer using thermal evaporation deposition method with a thickness of about 80nm (solar cell preparation process as shown in Figure 9 ).

[0038] Experimental results: The structure of perovskite solar cells is as follows Figure 1 As shown in the figure, at AM1.5, 100mW / cm 2 Under standard light intensity, the open circuit voltage of the solar cell prepared in this embodiment is 1.33V and the short circuit current density is 17.84mA / cm 2 , fill factor 79.83%, efficiency 19.06% ( Figure 2 ).

[0039] Example 2:

[0040] The present invention provides a method for passivating inorganic materials to enhance inorganic perovskite solar cells. The method comprises spin-coating a low-concentration nickel iodide isopropanol solution on the surface of an annealed inorganic perovskite film, thereby effectively passivating surface defects of the inorganic perovskite film, improving the quality of the inorganic perovskite film, and thereby increasing the photoelectric conversion efficiency of the inorganic perovskite solar cell.

[0041] Step 1: Clean the glass / ITO substrate 10 with detergent, acetone and isopropyl alcohol for 10 minutes each, wherein the sheet resistance of the ITO layer is 7-15 ohms.

[0042] Step 2: Blow the cleaned glass / ITO substrate dry with nitrogen, UV treat it for 10 minutes, then spin-coat the SnO2 nanoparticle solution on the ITO / glass substrate, adjust the thickness of the SnO2 electron transport layer film 20 to 30nm by controlling the spin-coating speed, and then place it on a hot plate at 150°C for annealing for 30 minutes. After annealing, UV treat it for 10 minutes for standby use. This process is carried out in air.

[0043] Step 3: Spin coat 0.6M CsPbI in a nitrogen glove box using a one-step method 3-x Br x The perovskite solution, the solvent is a mixed solution of DMF:DMSO (4:1), the spin coating speed is 2500 r / min and the time is 60 s, and then it is placed on a hot plate at 180° C. for annealing for 10 minutes. The thickness of the inorganic perovskite film 30 is about 300 nm.

[0044] Step 4: Spin-coat a nickel iodide passivation layer 40 on the perovskite film using a spin-coating solution method. Nickel iodide is dissolved in isopropyl alcohol at a concentration of 0.225 mg / mL. The spin-coating speed is 3000 r / min, the time is 30 s, and the thickness is about 2 nm.

[0045] Step 5: Use the spin coating method to spin-coat a hole transport layer 50% Spiro-OMeTAD solution on the nickel iodide passivation layer. Spiro-OMeTAD is dissolved in chlorobenzene with a concentration of 72.3 mg / mL. The spin coating speed is 3000 r / min and the time is 30 s. The thickness is about 150 nm. Then place it in an oxygen glove box for oxidation for about two hours.

[0046] Step 6: Take out the oxidized device and use thermal evaporation deposition to evaporate a metal gold electrode 60 on the hole transport layer with a thickness of about 80nm. Experimental results: The structure of the perovskite solar cell is as follows Figure 1 As shown in the figure, at AM1.5, 100mW / cm 2 Under standard light intensity, the open circuit voltage of the solar cell prepared in this embodiment is 1.36V, and the short circuit current density is 17.88mA / cm 2, fill factor 80.54%, efficiency 19.53% ( Figure 3 ).

[0047] Example 3:

[0048] The present invention provides a method for passivating inorganic materials to enhance inorganic perovskite solar cells. The method comprises spin-coating a low-concentration nickel iodide isopropanol solution on the surface of an annealed inorganic perovskite film, thereby effectively passivating surface defects of the inorganic perovskite film, improving the quality of the inorganic perovskite film, and thereby increasing the photoelectric conversion efficiency of the inorganic perovskite solar cell.

[0049] Step 1: Clean the glass / ITO substrate 10 with detergent, acetone and isopropyl alcohol for 10 minutes each, wherein the sheet resistance of the ITO layer is 7-15 ohms.

[0050] Step 2: Blow the cleaned glass / ITO substrate dry with nitrogen, UV treat it for 10 minutes, then spin-coat the SnO2 nanoparticle solution on the ITO / glass substrate, adjust the thickness of the SnO2 electron transport layer film 20 to 30nm by controlling the spin-coating speed, and then place it on a hot plate at 150°C for annealing for 30 minutes. After annealing, UV treat it for 10 minutes for standby use. This process is carried out in air.

[0051] Step 3: Spin coat 0.6M CsPbI in a nitrogen glove box using a one-step method 3-x Br x The perovskite solution, the solvent is a mixed solution of DMF:DMSO (4:1), the spin coating speed is 2500 r / min and the time is 60 s, and then it is placed on a hot plate at 180° C. for annealing for 10 minutes. The thickness of the inorganic perovskite film 30 is about 300 nm.

[0052] Step 4: Spin-coat a nickel iodide passivation layer 40 on the perovskite film using a spin-coating solution method. Nickel iodide is dissolved in isopropyl alcohol at a concentration of 0.225 mg / mL. The spin-coating speed is 5000 r / min and the time is 30 s.

[0053] Step 5: Use the spin coating method to spin-coat a hole transport layer 50% Spiro-OMeTAD solution on the nickel iodide passivation layer. Spiro-OMeTAD is dissolved in chlorobenzene with a concentration of 72.3 mg / mL. The spin coating speed is 3000 r / min and the time is 30 s. The thickness is about 150 nm. Then place it in an oxygen glove box for oxidation for about two hours.

[0054] Step 6: Take out the oxidized device and use thermal evaporation deposition to evaporate a metal gold electrode 60 on the hole transport layer with a thickness of about 80nm. Experimental results: The structure of the perovskite solar cell is as follows Figure 1 As shown in the figure, at AM1.5, 100mW / cm2 Under standard light intensity, the open circuit voltage of the solar cell prepared in this embodiment is 1.30V and the short circuit current density is 17.95mA / cm 2 , fill factor 80.90%, efficiency 18.85% ( Figure 4 ).

[0055] Example 4:

[0056] The present invention provides a method for passivating inorganic materials to enhance inorganic perovskite solar cells. The method comprises spin-coating a low-concentration nickel iodide isopropanol solution on the surface of an annealed inorganic perovskite film, thereby effectively passivating surface defects of the inorganic perovskite film, improving the quality of the inorganic perovskite film, and thereby increasing the photoelectric conversion efficiency of the inorganic perovskite solar cell.

[0057] Step 1: Clean the glass / ITO substrate 10 with detergent, acetone and isopropyl alcohol for 10 minutes each, wherein the sheet resistance of the ITO layer is 7-15 ohms.

[0058] Step 2: Blow the cleaned glass / ITO substrate dry with nitrogen, UV treat it for 10 minutes, then spin-coat the SnO2 nanoparticle solution on the ITO / glass substrate, adjust the thickness of the SnO2 electron transport layer film 20 to 30nm by controlling the spin-coating speed, and then place it on a hot plate at 150°C for annealing for 30 minutes. After annealing, UV treat it for 10 minutes for standby use. This process is carried out in air.

[0059] Step 3: Spin coat 0.6M CsPbI in a nitrogen glove box using a one-step method 3-x Br x The perovskite solution, the solvent is a mixed solution of DMF:DMSO (4:1), the spin coating speed is 2500 r / min and the time is 60 s, and then it is placed on a hot plate at 180° C. for annealing for 10 minutes. The thickness of the inorganic perovskite film 30 is about 300 nm.

[0060] Step 4: Spin-coat a nickel iodide passivation layer 40 on the perovskite film using a spin-coating solution method. Nickel iodide is dissolved in isopropyl alcohol at a concentration of 0.225 mg / mL. The spin-coating speed is 3000 r / min and the time is 60 s.

[0061] Step 5: Use the spin coating method to spin-coat a hole transport layer 50% Spiro-OMeTAD solution on the nickel iodide passivation layer. Spiro-OMeTAD is dissolved in chlorobenzene with a concentration of 72.3 mg / mL. The spin coating speed is 3000 r / min and the time is 30 s. The thickness is about 150 nm. Then place it in an oxygen glove box for oxidation for about two hours.

[0062] Step 6: Take out the oxidized device and use thermal evaporation deposition to evaporate a metal gold electrode 60 on the hole transport layer with a thickness of about 80nm. Experimental results: The structure of the perovskite solar cell is as follows Figure 1 As shown in the figure, at AM1.5, 100mW / cm 2 Under standard light intensity, the open circuit voltage of the solar cell prepared in this embodiment is 1.31V and the short circuit current density is 17.91mA / cm 2 , fill factor 81.61%, efficiency 19.07% ( Figure 5 ).

[0063] Example 5:

[0064] The present invention provides a method for passivating inorganic materials to enhance inorganic perovskite solar cells. The method comprises spin-coating a low-concentration nickel iodide isopropanol solution on the surface of an annealed inorganic perovskite film, thereby effectively passivating surface defects of the inorganic perovskite film, improving the quality of the inorganic perovskite film, and thereby increasing the photoelectric conversion efficiency of the inorganic perovskite solar cell.

[0065] Step 1: Clean the glass / ITO substrate 10 with detergent, acetone and isopropyl alcohol for 10 minutes each, wherein the sheet resistance of the ITO layer is 7-15 ohms.

[0066] Step 2: Blow the cleaned glass / ITO substrate dry with nitrogen, UV treat it for 10 minutes, then spin-coat the SnO2 nanoparticle solution on the ITO / glass substrate, adjust the thickness of the SnO2 electron transport layer film 20 to 30nm by controlling the spin-coating speed, and then place it on a hot plate at 150°C for annealing for 30 minutes. After annealing, UV treat it for 10 minutes for standby use. This process is carried out in air.

[0067] Step 3: Spin coat 0.6M CsPbI in a nitrogen glove box using a one-step method 3-x Br x The perovskite solution, the solvent is a mixed solution of DMF:DMSO (4:1), the spin coating speed is 2500 r / min and the time is 60 s, and then it is placed on a hot plate at 180° C. for annealing for 10 minutes. The thickness of the inorganic perovskite film 30 is about 300 nm.

[0068] Step 4: Spin-coat a nickel iodide passivation layer 40 on the perovskite film using a spin-coating solution method. Nickel iodide is dissolved in isopropyl alcohol at a concentration of 0.30 mg / mL. The spin-coating speed is 3000 r / min, the time is 30 s, and the thickness is about 2 nm.

[0069] Step 5: Use the spin coating method to spin-coat a hole transport layer 50% Spiro-OMeTAD solution on the nickel iodide passivation layer. Spiro-OMeTAD is dissolved in chlorobenzene with a concentration of 72.3 mg / mL. The spin coating speed is 3000 r / min and the time is 30 s. The thickness is about 150 nm. Then place it in an oxygen glove box for oxidation for about two hours.

[0070] Step 6: Take out the oxidized device and use thermal evaporation deposition to evaporate a metal gold electrode 60 on the hole transport layer with a thickness of about 80nm. Experimental results: The structure of the perovskite solar cell is as follows Figure 1 As shown in the figure, at AM1.5, 100mW / cm 2 Under standard light intensity, the open circuit voltage of the solar cell prepared in this embodiment is 1.34V and the short circuit current density is 17.73mA / cm 2 , fill factor 79.02%, efficiency 18.82% ( Figure 6 ).

[0071] Example 6 (comparative example):

[0072] Unpassivated CsPbI 3-x Br x A method for preparing a (0≤x≤1) perovskite solar cell comprises the following steps:

[0073] Step 1: Clean the glass / ITO substrate 10 with detergent, acetone and isopropyl alcohol for 10 minutes each, wherein the sheet resistance of the ITO layer is 7-15 ohms.

[0074] Step 2: Blow the cleaned glass / ITO substrate dry with nitrogen, UV treat it for 10 minutes, then spin-coat the SnO2 nanoparticle solution on the ITO / glass substrate, adjust the thickness of the SnO2 electron transport layer film 20 to 30nm by controlling the spin-coating speed, and then place it on a hot plate at 150°C for annealing for 30 minutes. After annealing, UV treat it for 10 minutes for standby use. This process is carried out in air.

[0075] Step 3: Spin coat 0.6M CsPbI in a nitrogen glove box using a one-step method 3-x Br x The perovskite solution, the solvent is a mixed solution of DMF:DMSO (4:1), the spin coating speed is 2500 r / min and the time is 60 s, and then it is placed on a hot plate at 180° C. for annealing for 10 minutes. The thickness of the inorganic perovskite film 30 is about 300 nm.

[0076] Step 4: Use the spin coating method to spin-coat a hole transport layer 50% Spiro-OMeTAD solution on the inorganic perovskite film. Spiro-OMeTAD is dissolved in chlorobenzene at a concentration of 72.3 mg / mL. The spin coating speed is 3000 r / min and the time is 30 s. The thickness is about 150 nm. Then place it in an oxygen glove box for oxidation for about two hours.

[0077] Step 5: Take out the oxidized device and use thermal evaporation deposition to evaporate a gold electrode 60 on the hole transport layer with a thickness of about 80nm. Figure 1 As shown in the figure, at AM1.5, 100mW / cm 2 Under standard light intensity, the open circuit voltage of the solar cell prepared in this embodiment is 1.27V and the short circuit current density is 17.70mA / cm 2 , fill factor 77.95%, efficiency 17.49% ( Figure 7 ).

[0078] Example 7 (comparative example):

[0079] A method for preparing an inorganic perovskite passivated with octylammonium iodide and its application in an inorganic solar cell comprises the following steps:

[0080] Step 1: Clean the glass / ITO substrate 10 with detergent, acetone and isopropyl alcohol for 10 minutes each, wherein the sheet resistance of the ITO layer is 7-15 ohms.

[0081] Step 2: Blow the cleaned glass / ITO substrate dry with nitrogen, UV treat it for 10 minutes, then spin-coat the SnO2 nanoparticle solution on the ITO / glass substrate, adjust the thickness of the SnO2 electron transport layer film 20 to 30nm by controlling the spin-coating speed, and then place it on a hot plate at 150°C for annealing for 30 minutes. After annealing, UV treat it for 10 minutes for standby use. This process is carried out in air.

[0082] Step 3: Spin coat 0.6M CsPbI in a nitrogen glove box using a one-step method 3-x Br x The perovskite solution, the solvent is a mixed solution of DMF:DMSO (4:1), the spin coating speed is 2500 r / min and the time is 60 s, and then it is placed on a hot plate at 180° C. for annealing for 10 minutes. The thickness of the inorganic perovskite film 30 is about 300 nm.

[0083] Step 4: Use the spin coating method to spin octyl ammonium iodide passivation layer on the perovskite film. Octyl ammonium iodide is dissolved in isopropanol with a concentration of 5 mg / mL and the spin coating speed is 3000 r / min for 30 seconds.

[0084] Step 5: Use the spin coating method to spin-coat a hole transport layer 50% Spiro-OMeTAD solution on the octyl ammonium iodide passivation layer. Spiro-OMeTAD is dissolved in chlorobenzene at a concentration of 72.3 mg / mL. The spin coating speed is 3000 r / min and the time is 30 s. The thickness is about 150 nm. Then place it in an oxygen glove box for oxidation for about two hours.

[0085] Step 6: Take out the oxidized device and evaporate a metal gold electrode 60 on the hole transport layer using a thermal evaporation deposition method to a thickness of about 80 nm.

[0086] Experimental results: The structure of perovskite solar cells is as follows Figure 1 As shown in the figure, at AM1.5, 100mW / cm 2 Under standard light intensity, the open circuit voltage of the solar cell prepared in this embodiment is 1.29V and the short circuit current density is 18.16mA / cm 2 , filling factor 80.03%, efficiency 18.78% ( Figure 8 ).

[0087] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for passivating inorganic perovskite solar cells with inorganic materials, characterized in that: The passivation method is to passivate the inorganic perovskite film of the inorganic perovskite solar cell by using a spin coating solution method after the inorganic perovskite film is prepared and annealed. The inorganic perovskite film is passivated using a nickel iodide isopropanol solution with a concentration of less than 0.3 mg / mL.

2. The method for passivating inorganic perovskite solar cells with inorganic materials according to claim 1, characterized in that: The spin coating speed of the passivation treatment is 3000-5000 r / min, and the time is 20-60 s.

3. The method for passivating an inorganic perovskite solar cell using an inorganic material according to claim 1 or 2, wherein: The structure of the passivated inorganic perovskite solar cell includes, from bottom to top, a glass / ITO substrate, a tin dioxide electron transport layer, an inorganic perovskite light absorption layer, a nickel iodide passivation layer, a hole transport layer, and a metal electrode.

4. The method for passivating inorganic perovskite solar cells with inorganic materials according to claim 3, characterized in that: The glass / ITO substrate is transparent conductive glass.

5. The method for passivating inorganic perovskite solar cells with inorganic materials according to claim 3, characterized in that: The tin dioxide electron transport layer is prepared by a spin coating-annealing process, the annealing process is carried out at 150° C., and the thickness is 20-50 nm.

6. The method for passivating inorganic perovskite solar cells with inorganic materials according to claim 3, characterized in that: The perovskite light absorption layer material is CsPbI 3-x Br x , wherein 0≤x≤1, is prepared by a solution spin coating process, and the spin-coated inorganic perovskite film is annealed at 180° C. and has a thickness of 200-400 nm.

7. The method for passivating inorganic perovskite solar cells with inorganic materials according to claim 3, characterized in that: The hole transport layer is made of Spiro-OMeTAD, which is prepared by spin coating and has a thickness of 100-200 nm.

8. The method for passivating inorganic perovskite solar cells with inorganic materials according to claim 3, characterized in that: The metal electrode material is gold, which is prepared by a thermal evaporation process and has a thickness of 60-100 nm.

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