A preparation method and application of flexible and special-shaped perovskite solar cell module

Abstract

The present invention belongs to the technical field of new energy materials, and discloses a method for preparing a flexible and special-shaped perovskite solar cell module and its application. In the process of preparing solar cells by the vapor phase method, a slightly movable ultra-fine mask wire is used, and the slight relative displacement between the substrate and the mask wire is used as the interval between the P1, P2, and P3 patterns, so that a solar cell module with a geometric fill factor greater than 95% and high output power can be prepared without a barrier layer. The present invention avoids the problem of excessive damage to the perovskite active layer and the bottom electrode on both sides of the scribed pattern during the laser scribing of P2 and P3, and thus has the advantage of being compatible with flexible and special-shaped curved substrates. The present invention can produce high-quality and high-uniformity perovskite active layer films, and at the same time shows a module with a dead zone area close to that of the laser scribing method, and can prepare efficient perovskite solar cell modules on large-area flexible and special-shaped substrates.

Description

Technical Field

[0001] The present invention belongs to the technical field of new energy materials, and in particular relates to a preparation method and application of a flexible and special-shaped perovskite solar cell module with a high geometric filling factor. Background Art

[0002] At present, the certified power conversion efficiency of small-area perovskite solar cells has reached 25.5%. The rapid improvement of small-area cell efficiency will drive the rapid development of module efficiency. When modularizing solar cells, several common ways to make groove patterns include laser scribing to prepare grooves (patterns) and mechanical methods to prepare grooves (patterns).

[0003] In 2015, Ballif et al. used the laser scribing method to prepare perovskite solar cell modules for the first time, and the dead area of ​​the device was less than 16%; in 2018, Zhu Kai et al. used a one-step anti-solvent method to prepare perovskite films, and used a 532nm laser to etch P1, P2, and P3, and the dead zone width of the obtained battery was 0.89mm. They found that due to the damage of the edge perovskite film caused by laser scribing, the dead zone width of the prepared module was larger, which in turn affected the performance of the module. In 2020, Bruno et al. used the co-evaporation method to prepare perovskite films, using a wavelength of 1064nm and a pulse energy of 40μJ to etch P1, and P3 was prepared using a 500μm tape mask. They found that when using the laser etching method to prepare modules, the edges of the perovskite film may be irreparably affected, which is not conducive to the reproducibility of the module's performance. In 2021, Qi Yabing et al. used CO 2 The laser is used to scribe the channel, P1 has a width of 0.05mm, P2 is scribed with a pulse energy of 5.6W and a speed of 20mm / s, and the width is 250μm. P3 is separated by mechanical scribing to separate the upper electrodes of each sub-battery. When the mechanical scribing method is used to prepare the module, when scribing P3, it is easy to cause the silver electrode and ITO electrode of the same battery to contact, causing a short circuit of the device, which is not suitable for large-scale preparation of modules.

[0004] At the same time, it is very difficult to prepare modules on simple special-shaped substrates. The mechanical scribing method can easily cause damage to the substrate, and the focusing surface is difficult to adjust in real time according to the actual curvature of the surface during the laser scribing process.

[0005] In 2019, Han Liyuan et al. introduced low-dimensional gC into perovskite solar cell modules. 3 N 4 Barrier materials are used to inhibit the diffusion of iodine ions in perovskite into the electrode, enhancing device stability.

[0006] But the two-dimensional gC 3 N4 The preparation cycle of barrier materials is long and the process is complicated. At the same time, the purity of the prepared barrier materials will also affect the performance of the device, increasing the difficulty of preparing the battery module.

[0007] Through the above analysis, the problems and defects of the prior art are as follows:

[0008] (1) Laser scribing can damage the perovskite film at the edge of the scribing area, affecting the performance of the device;

[0009] (2) The laser scribing energy is large, which is not conducive to the preparation of modules on flexible substrates;

[0010] (3) The preparation process of the module barrier layer is complicated.

[0011] The difficulty in solving the above problems and defects is that laser scribing inevitably damages the perovskite film around the scribing area, and because the local temperature of the laser scribing is too high, there are certain difficulties in preparing flexible perovskite films. And on a curved substrate, when the substrate moves relative to the laser, the problem of focusing the laser on the perovskite layer is also difficult to effectively overcome; on the other hand, the traditional module needs to prepare a barrier layer before preparing P3 to prevent the electrode from contacting the bottom perovskite layer. Adding an additional barrier layer increases the difficulty of the process and reduces the repeatability of the process.

[0012] The significance of solving the above problems and defects is as follows: the preparation module of the mask scribing method will not affect the perovskite film around the scribing area; the preparation module of the mask scribing method is conducive to the preparation of modules on flexible or even curved substrates; the preparation module of the mask scribing method avoids the use of a barrier layer, simplifies the preparation process, and is convenient for actual production applications. Summary of the invention

[0013] In order to overcome the problems existing in the related art, the embodiments disclosed in the present invention provide a flexible and special-shaped perovskite solar cell module with a high geometric filling factor, a preparation method and application thereof. Specifically, it relates to a preparation method of a flexible and special-shaped perovskite solar cell module with a high geometric filling factor (ratio of effective area to total area).

[0014] The technical solution is as follows: A method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor, using a vapor phase mask method to prepare P1, P2, and P3 patterns, specifically comprising:

[0015] Step 1: using a mask line La mask, depositing the electrode 1 of the solar cell module on a pre-cleaned flexible substrate or a special-shaped substrate, the mask area formed on the substrate is P1; the width is 0.10-0.12 mm;

[0016] Step 2: The mask thin line La and the substrate are slightly moved relative to each other for the first time, and the mask thin line Lb is formed after the movement;

[0017] Step 3, take out the substrate in the vacuum chamber, and use the fine adjustment function of the substrate to slightly move the mask line Lb and the substrate for the second time in the same direction as the moving direction of the mask line Lb relative to the mask line La, and form the mask line Lc after the movement;

[0018] Step 4, the mask line Lc and the substrate are slightly moved for the third time in the same direction as the movement direction of the mask line Lc relative to the mask line Lb, and the mask line Ld is formed after the movement;

[0019] Step 5, the mask fine line Ld and the substrate are slightly moved relative to each other for the fourth time, and the direction is the same as the moving direction of the mask fine line Ld relative to the mask fine line Lc; after the movement, the mask fine line Le is formed;

[0020] Step six, remove the mask thin line Le, disconnect the electrode 2 of the sub-cell, form P3 on the substrate, and obtain a flexible and special-shaped perovskite solar cell module with a high geometric filling factor.

[0021] In one embodiment, the electrode 1 in step 1 is a transparent conductive electrode 1, including one of an indium-doped tin oxide film, a fluorine-doped tin oxide film, an oxide / ultra-thin metal / oxide film, and an ultra-thin metal / ultra-thin metal film;

[0022] The electrode 1 is prepared by magnetron sputtering, chemical vapor deposition, vacuum evaporation or a combination of these methods.

[0023] In one embodiment, the first relative micro-movement distance in step 2 is 0.025-0.040 mm; after the movement to form the mask fine line Lb, the following steps are required:

[0024] Depositing at least a charge transport layer 1 by a vapor phase method;

[0025] The substrate with the mask area P1 and the mask fine line Lb is placed in a vacuum chamber, and the vacuum degree of the vacuum chamber is evacuated to 5·E. -4 -1·10 -4 Pa, the charge transport layer 1 is deposited in a vacuum environment.

[0026] In one embodiment, the vapor deposited charge transport layer 1 comprises an oxide or halide charge transport layer (such as NiO x 、TiO x 、ZnO、CuI、SnO 2 ), an organic charge transport layer (such as TAPC, TPD, CuPc, MeO-2PACz, PTAA, NPB,) or a combination of several thereof.

[0027] In one embodiment, the second micro-movement distance in step 3 is 0.025-0.040 mm. After the mask fine line Lc is formed after the movement, it is necessary to further perform: preparing the perovskite active layer by a two-step gas phase method or preparing the perovskite active layer by a multi-source co-evaporation method;

[0028] The two-step gas phase method for preparing the perovskite active layer comprises:

[0029] Putting the substrate with the charge transport layer 1 into the vacuum chamber again;

[0030] The vacuum degree of the vacuum chamber is pumped to 5.10 -3 -1·10 -3 Pa, prepare loose and uniform metal halide thin films by vacuum evaporation;

[0031] The obtained metal halide film is removed and placed in the device cavity together with the organic ammonium halide powder;

[0032] The metal halide is one or a combination of lead chloride, lead bromide, lead iodide, stannous chloride, stannous bromide, stannous iodide and stannous fluoride;

[0033] The organic ammonium halide is one or a combination of methylammonium chloride, ethylammonium chloride, methylammonium chloride, ethylammonium bromide, methylammonium bromide, dimethylammonium bromide, methylammonium iodide, ethylammonium iodide, methylammonium chloride and dimethylammonium iodide;

[0034] The perovskite active layer comprises one of methylamine lead iodine perovskite, methylamine tin iodine perovskite, cesium lead iodine perovskite, formamidinium lead iodine perovskite, methylamine lead chloroperovskite, methylamine lead bromine perovskite, formamidinium lead chloroperovskite, and formamidinium lead bromine perovskite;

[0035] The preparation method of the perovskite active layer is a physical vapor deposition method, a chemical vapor deposition method, or a combination of the two.

[0036] In one embodiment, the third micro-movement distance in step 4 is 0.025-0.040 mm. After the movement forms the mask fine line Ld, the following steps are required:

[0037] At least a charge transport layer 2 is deposited by a vapor phase method;

[0038] No insulating adhesive layer is provided between the charge transport layer 2 and the electrode 2 .

[0039] In one embodiment, the fourth relative micro-movement distance in step 5 is 0.02-0.05 mm. After the thin mask line Le is formed after the movement, the following steps are required:

[0040] Depositing at least an electrode 2 by a vapor phase method;

[0041] Electrode 2 is in direct contact with electrode 1; forming a series path.

[0042] In one embodiment, the mask thin wires La-Le include one or more of ultra-fine iron wires, bendable ultra-fine copper wires, hard copper wires, stainless steel wires, and nickel-titanium alloy memory wires.

[0043] Another object of the present invention is to provide a flexible and special-shaped perovskite solar cell with a high geometric filling factor prepared according to the preparation method.

[0044] Another object of the present invention is to provide a flexible and special-shaped perovskite solar cell with a high geometric filling factor for use in a hybrid power generation grid network.

[0045] Combining all the above technical solutions, the advantages and positive effects of the present invention are as follows:

[0046] The present invention belongs to the technical field of new energy materials, and discloses a method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor (ratio of effective area to total area). In the process of preparing solar cells by a vapor phase method, a finely movable ultra-fine mask wire is used, and the slight relative displacement between the substrate and the mask wire is used as the interval of the P1, P2, and P3 patterns, and a solar cell module with a geometric filling factor of not less than 95% and high output power can be prepared without an additional barrier layer. This method avoids the problem of excessive damage to the perovskite active layer and the bottom electrode on both sides of the scribed pattern during the laser scribing of P2 and P3, and thus has the advantage of being compatible with flexible and special-shaped curved substrates. Compared with the prior art, this method can produce high-quality and high-uniformity perovskite active layer films, and at the same time shows a module with a dead zone area close to that of the laser scribing method, and can prepare efficient perovskite solar cell modules on large-area flexible and special-shaped substrates.

[0047] Compared with the prior art, the advantages of the present invention further include:

[0048] The present invention can prepare a perovskite solar cell module with a high geometric fill factor (GFF) and high output power on a flexible and special-shaped substrate without providing an additional barrier layer.

[0049] The present invention prepares perovskite solar cell modules by vapor deposition, successfully overcoming the problems of device damage caused by excessive laser intensity and inconvenience in marking special-shaped substrates when using laser to etch P1, P2, and P3 patterns when preparing solar cell modules on flexible and special-shaped substrates.

[0050] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0052] Figure 1 It is a flow chart of a method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor provided by an embodiment of the present invention.

[0053] Figure 2 It is a schematic structural diagram of a perovskite solar cell module prepared by a mask method according to an embodiment of the present invention.

[0054] FIG3 is a process flow chart of a perovskite solar cell module prepared by a mask method according to the first embodiment of the present invention (scale=200 μm).

[0055] FIG. 4 is a physical picture of a solar cell module prepared on a flexible substrate using a mask method according to an embodiment of the present invention.

[0056] 5 is a scanning electron microscope (SEM) characterization comparison diagram of a perovskite film prepared by a two-step vapor phase method (right) and a perovskite film prepared by a spray coating method (left) provided in an embodiment of the present invention (scale bar = 2 μm).

[0057] FIG. 6 is a diagram of a module P2 region ( Figure 6(i)-Figure 6(iii) ) and the P2 area of ​​the non-fine-tunable mask line preparation module ( Figure 6 (I) - Figure 6 (III) ) Surface energy spectrum analysis (EDS) characterization comparison chart (scale bar = 2μm).

[0058] Figure 7 is a current density-voltage (JV) curve diagram of a solar cell module prepared using a movable mask fine-line mask (left) and an immovable mask fine-line mask (right) under simulated sunlight, provided in an embodiment of the present invention; wherein Figure 7(a) is a curve diagram of the immovable mask method, and Figure 7(b) is a current density-voltage (JV) curve diagram of the prepared solar cell module under simulated sunlight.

[0059] FIG8 is a partial physical picture of a solar cell module prepared by a mask method according to an example of the present invention, wherein FIG8(a) is an overall physical picture of a solar cell module preparation device prepared by a mask method, FIG8(b) is an effect diagram of a substrate fixing fixture, FIG8(c) is an effect diagram of a 0.10 mm mask line and a substrate tightly fitting together; and FIG8(d) is a physical picture of a fine-tuning device. DETAILED DESCRIPTION

[0060] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific implementation disclosed below.

[0061] like Figure 1 As shown, the present invention provides a method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor, and adopts a vapor phase mask method to prepare P1, P2, and P3 patterns, which specifically includes:

[0062] S101, using a mask thin line La mask, depositing an electrode 1 of a solar cell module on a pre-cleaned flexible substrate or a special-shaped substrate, the mask area formed on the substrate is P1; the width is 0.10-0.12 mm;

[0063] S102, taking out the substrate from the vacuum chamber, slightly moving the mask line La and the substrate relative to each other for the first time, forming a mask line Lb after the movement, and evaporating a hole transport layer;

[0064] S103, take out the substrate in the vacuum chamber, and use the fine adjustment function of the substrate to slightly move the mask line Lb and the substrate for the second time, in the same direction as the movement direction of the mask line Lb relative to the mask line La, to form the mask line Lc after the movement, and evaporate lead iodide. Take it out and prepare a perovskite film by gas-solid reaction method;

[0065] S104, the mask fine line Lc and the substrate are slightly moved for the third time in the same direction as the movement direction of the mask fine line Lc relative to the mask fine line Lb, and the mask fine line Ld is formed after the movement, and an electron transport layer is evaporated;

[0066] S105, the mask fine line Ld and the substrate are slightly moved relative to each other for the fourth time, and the direction is the same as the direction in which the mask fine line Ld moves relative to the mask fine line Lc; after the movement, the mask fine line Le is formed, and the electrode 2 is evaporated;

[0067] S106, removing the mask thin line Le, disconnecting the electrode 2 of the sub-cell, forming P3 on the substrate, and manufacturing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor.

[0068] In a preferred embodiment of the present invention, the solar cell module with a high geometric fill factor is manufactured by using the spiral amplification principle of a spiral micrometer to cause a relatively small displacement between the substrate and the mask thin line;

[0069] The solar cell module with high geometric fill factor is segmented by ultra-fine lines, and the area occupied by the P1, P2, and P3 patterns in each sub-cell can be less than 5% of the total area of ​​the sub-cell;

[0070] The solar cell module with high geometric filling factor uses a plurality of mask lines La mask to prepare a transparent conductive electrode 1 on a flexible or irregular substrate, the width of the La mask line is D, and a plurality of parallel insulating areas P1 with a width of D are formed on the substrate to disconnect the electrodes 1 of adjacent sub-cells.

[0071] In a preferred embodiment of the present invention, the first micro-movement of the module preparation system is used to make the substrate and the mask line La move slightly relative to each other, the moving distance is D / 4, and the mask line after the movement is Lb. Through the Lb mask, at least the charge transport layer 1 is deposited by the vapor phase method.

[0072] In a preferred embodiment of the present invention, a second micro-shift is performed, the shift distance is D / 4, the mask fine line after the shift is Lc, the direction is the same as the shift direction of Lb relative to La, and the perovskite active layer is prepared by at least two steps of gas phase method through the mask of Lc;

[0073] The two-step method is used to prepare the perovskite active layer. The substrate with the existing P1 and the mask fine line Lc is placed in a vacuum chamber, and the vacuum degree of the vacuum chamber is pumped to 3·10 -3 -1·10 -3 Pa, preparing a loose and uniform metal halide film, placing the obtained substrate with the metal halide film and the organic ammonium halide powder together in the cavity of the reaction device, and preparing the perovskite active layer by a two-step gas phase method;

[0074] The metal halide includes at least one or a combination of lead chloride, cesium iodide, lead bromide, lead iodide, stannous chloride, stannous bromide, stannous iodide, and stannous fluoride; the perovskite active layer includes at least one or a combination of methylamine lead iodide perovskite, methylamine tin iodide perovskite, cesium lead iodide perovskite, formamidinium lead iodide perovskite, and formamidinium tin iodide perovskite; the preparation method of the perovskite active layer is one or a combination of physical vapor deposition and chemical vapor deposition.

[0075] In a preferred embodiment of the present invention, a third micro-shift is performed with a moving distance of D / 4. After the movement, the mask fine line is Ld, and the direction is the same as the moving direction of Lc relative to Lb. Under the mask of Ld, at least the electron transport layer 2 is deposited by a vapor phase method.

[0076] In a preferred embodiment of the present invention, the function of a partial mask area formed on the substrate through the Lb, Lc, and Ld masks is equivalent to P2 in the traditional three-step scribing process.

[0077] In a preferred embodiment of the present invention, no insulating adhesive layer is required to be disposed on the charge transport layer 2 .

[0078] In a preferred embodiment of the present invention, a fourth micro-shift is performed with a displacement distance of D / 2 and a direction the same as the movement direction of Ld relative to Lc. After the micro-shift, the mask fine line is Le. Under the mask of Le, at least the electrode 2 is deposited by vapor phase method.

[0079] In a preferred embodiment of the present invention, the electrode 2 is in contact with the transparent conductive electrode 1 of the adjacent sub-cell to form a series path.

[0080] The mask fine line Le is removed and P3 is formed on the substrate, successfully preparing a flexible or special-shaped solar cell module with a high geometric filling factor.

[0081] The technical solution of the present invention is further described below in conjunction with specific embodiments.

[0082] Example 1

[0083] The present invention provides a method for preparing a solar cell module with a high geometric fill factor on a flexible and special-shaped substrate. The steps of preparing the module by using a mask process are as follows:

[0084] 1) a mask thin line La is provided on a substrate, and a transparent conductive electrode 1 is formed by at least a vapor phase method;

[0085] Further, such as Figure 2 As stated, The area represents the formation of P1 on the substrate by the preset mask thin line La mask, with a width of 0.12 mm;

[0086] Furthermore, the transparent conductive electrode 1 is an indium-doped tin dioxide (ITO) transparent conductive film prepared by magnetron sputtering.

[0087] 2) Using the first slight displacement of the substrate, the substrate is slightly moved 0.10 mm relative to the mask fine line La to form the mask fine line Lb. Figure 2 ①-⑥As shown;

[0088] Further, a charge transport layer 1 is deposited by a vapor phase method, and the charge transport layer 1 covers the P1. Area, such as Figure 2 As shown;

[0089] Further, the existing mask P1 pattern and the flexible or shaped substrate with the Lb mask thin line are placed into the vacuum chamber;

[0090] Furthermore, the vacuum degree of the vacuum chamber is evacuated to 1.10 -4Pa, a charge transport layer 1 is prepared by a vapor deposition method;

[0091] Optionally, the vapor deposited charge transport layer 1 comprises at least an oxide or halide charge transport layer (such as NiO x 、TiO x 、ZnO、CuI、SnO 2 ), one or a combination of organic charge transport layers (such as TAPC, TPD, CuPc, MeO-2PACz, PTAA, NPB).

[0092] 3) Take out the flexible or shaped substrate with the hole transport layer and perform a second micro-shift, where the substrate is slightly shifted by 0.025 mm relative to the mask fine line Lb to form the mask fine line Lc, in the same direction as the moving direction of Lb relative to La, such as Figure 2 ②-⑦ show the area covered by the base;

[0093] Further, such as Figure 2 As shown in the ⑤-⑦ area, the right side of the isolated silver electrode is in direct contact with the left side layer of the perovskite activity of the next sub-cell;

[0094] Further, the substrate with the Lc mask thin line is placed in the vacuum chamber again, and the perovskite active layer is prepared by at least two-step gas phase method;

[0095] Furthermore, the vacuum degree of the vacuum chamber is evacuated to 1.10 -3 Pa, preparation of loose and uniform metal halide films;

[0096] Furthermore, the deposition rate of the metal halide is 0.04 nm / s, and the film thickness is 260 nm.

[0097] 4) placing the obtained metal halide film and organic ammonium halide powder together into a device cavity;

[0098] Furthermore, the perovskite active layer was prepared using a two-step gas phase method;

[0099] Further, the perovskite active layer includes one of methylamine lead iodine perovskite, methylamine tin iodine perovskite, cesium lead iodine perovskite, and formamidine lead iodine perovskite;

[0100] Furthermore, the preparation method of the perovskite active layer is one or a combination of physical vapor deposition and chemical vapor deposition;

[0101] Furthermore, the perovskite active layer covers the ①-② region in P1; the ①-② region is as follows Figure 2 .

[0102] 5) The substrate is slightly moved relative to the mask line for the third time, with a slight movement distance of 0.04 mm to form a mask line Ld, with the same direction as the movement direction of Lc relative to Lb. Figure 2 As shown in ③-⑧;

[0103] Further, a charge transport layer 2 is deposited by a vapor phase method;

[0104] Optionally, the charge transport layer 2 includes at least an oxide or halide charge transport layer (such as NiO x 、TiO x 、ZnO、CuI、SnO 2 ), one or a combination of organic charge transport layers (such as TAPC, TPD, CuPc, MeO-2PACz, PTAA, NPB). Charge transport layer 2 and charge transport layer 1 are respectively hole and electron transport layers or electron and hole transport layers;

[0105] Furthermore, the region where the charge transport layer 2 is located covers the ②-③ region in P1; the ②-③ region is as follows Figure 2 ;

[0106] Furthermore, there is no need to provide an insulating adhesive layer between the charge transport layer 2 and the electrode 2 .

[0107] 6) The substrate is slightly moved relative to the mask fine line for the fourth time, with a slight movement distance of 0.025 mm to form Le, and the direction is the same as the moving direction of Ld relative to Lc;

[0108] Further, a metal electrode silver is deposited, and the silver electrode is not in direct contact with the perovskite active layer;

[0109] Further, such as Figure 2 As shown in ④-⑤, the silver electrode contacts the transparent conductive ITO electrode to form P2.

[0110] 7) Remove the mask thin line Le, isolate the silver electrode interconnection of the sub-cell, and successfully produce a perovskite solar cell module with a high geometric filling factor;

[0111] Further, such as Figure 2 ⑤-⑨ area is shown as P3;

[0112] Further, P1, P2, and P3 show a width of 0.310 mm and a geometric fill factor of 95.6%;

[0113] Optionally, the mask wires used to prepare the flexible and special-shaped perovskite solar cell modules include at least one or a combination of bendable ultra-fine copper wires, hard copper wires, stainless steel wires, and nickel-titanium alloy memory wires.

[0114] Example 2

[0115] The present invention provides a method for preparing a solar cell module with a high geometric fill factor on a flexible and special-shaped substrate. The steps of preparing the module by using a mask process are as follows:

[0116] 1) a mask thin line La is provided on a substrate, and a transparent conductive electrode 1 is formed by at least a vapor phase method;

[0117] Further, such as Figure 2 As stated, The area represents the formation of P1 on the substrate by the preset mask thin line La mask, with a width of 0.12 mm;

[0118] Furthermore, the transparent conductive electrode 1 is an indium-doped tin dioxide (ITO) transparent conductive film prepared by magnetron sputtering.

[0119] 2) Using the first slight displacement of the substrate, the substrate is slightly moved 0.025 mm relative to the mask fine line La to form the mask fine line Lb. Figure 2 ①-⑥As shown;

[0120] Further, a charge transport layer 1 is deposited by a vapor phase method, and the charge transport layer 1 covers the P1. Area, such as Figure 2 As shown;

[0121] Further, the existing mask P1 pattern and the flexible or shaped substrate with the Lb mask thin line are placed into the vacuum chamber;

[0122] Furthermore, the vacuum degree of the vacuum chamber is evacuated to 1.10 -4 Pa, a charge transport layer 1 is prepared by a vapor deposition method;

[0123] Optionally, the vapor deposited charge transport layer 1 comprises at least an oxide or halide charge transport layer (such as NiO x 、TiO x 、ZnO、CuI、SnO 2 ), one or a combination of organic charge transport layers (such as TAPC, TPD, CuPc, MeO-2PACz, PTAA, NPB).

[0124] 3) Take out the flexible or shaped substrate with the hole transport layer and perform a second micro-shift, where the substrate is slightly shifted by 0.030 mm relative to the mask fine line Lb to form the mask fine line Lc, in the same direction as the moving direction of Lb relative to La, such as Figure 2 ②-⑦ show the area covered by the base;

[0125] Further, such as Figure 2As shown in the ⑤-⑦ area, the right side of the isolated silver electrode is in direct contact with the left side layer of the perovskite activity of the next sub-cell;

[0126] Further, the substrate with the Lc mask thin line is placed in the vacuum chamber again, and the perovskite active layer is prepared by at least two-step gas phase method;

[0127] Furthermore, the vacuum degree of the vacuum chamber is evacuated to 1.10 -3 Pa, preparation of loose and uniform metal halide films;

[0128] Furthermore, the deposition rate of the metal halide is 0.04 nm / s, and the film thickness is 260 nm.

[0129] 4) placing the obtained metal halide film and organic ammonium halide powder together into a device cavity;

[0130] Furthermore, the perovskite active layer was prepared using a two-step gas phase method;

[0131] Further, the perovskite active layer includes one of methylamine lead iodine perovskite, methylamine tin iodine perovskite, cesium lead iodine perovskite, and formamidine lead iodine perovskite;

[0132] Furthermore, the preparation method of the perovskite active layer is one or a combination of physical vapor deposition and chemical vapor deposition;

[0133] Furthermore, the perovskite active layer covers the ①-② region in P1; the ①-② region is as follows Figure 2 .

[0134] 5) The substrate is slightly moved relative to the mask line for the third time, with a slight movement distance of 0.025 mm to form a mask line Ld, with the same direction as the movement direction of Lc relative to Lb. Figure 2 As shown in ③-⑧;

[0135] Further, a charge transport layer 2 is deposited by a vapor phase method;

[0136] Optionally, the charge transport layer 2 includes at least an oxide or halide charge transport layer (such as NiO x 、TiO x 、ZnO、CuI、SnO 2 ), one or a combination of organic charge transport layers (such as TAPC, TPD, CuPc, MeO-2PACz, PTAA, NPB). Charge transport layer 2 and charge transport layer 1 are respectively hole and electron transport layers or electron and hole transport layers;

[0137] Furthermore, the region where the charge transport layer 2 is located covers the ②-③ region in P1; the ②-③ region is as follows Figure 2 ;

[0138] Furthermore, there is no need to provide an insulating adhesive layer between the charge transport layer 2 and the electrode 2 .

[0139] 6) The substrate is slightly moved relative to the mask fine line for the fourth time, with a slight movement distance of 0.03 mm to form Le, and the direction is the same as the moving direction of Ld relative to Lc;

[0140] Further, a metal electrode silver is deposited, and the silver electrode is not in direct contact with the perovskite active layer;

[0141] Further, such as Figure 2 As shown in ④-⑤, the silver electrode contacts the transparent conductive ITO electrode to form P2.

[0142] 7) Remove the mask thin line Le, isolate the silver electrode interconnection of the sub-cell, and successfully produce a perovskite solar cell module with a high geometric filling factor;

[0143] Further, such as Figure 2 ⑤-⑨ area is shown as P3;

[0144] Furthermore, the width shown in P1, P2, and P3 is 0.22 mm, and the geometric fill factor is 96.9%;

[0145] Optionally, the mask wires used to prepare the flexible and special-shaped perovskite solar cell modules include at least one or a combination of bendable ultra-fine copper wires, hard copper wires, stainless steel wires, and nickel-titanium alloy memory wires.

[0146] Example 3

[0147] The present invention provides a method for preparing a solar cell module with a high geometric fill factor on a flexible and special-shaped substrate. The steps of preparing the module by using a mask process are as follows:

[0148] 1) a mask thin line La is provided on a substrate, and a transparent conductive electrode 1 is formed by at least a vapor phase method;

[0149] Further, such as Figure 2 As stated, The area represents the formation of P1 on the substrate by the preset mask thin line La mask, with a width of 0.12 mm;

[0150] Furthermore, the transparent conductive electrode 1 is an indium-doped tin dioxide (ITO) transparent conductive film prepared by magnetron sputtering.

[0151] 2) Using the first slight displacement of the substrate, the substrate is slightly moved 0.075 mm relative to the mask fine line La to form the mask fine line Lb. Figure 2 ①-⑥As shown;

[0152] Further, a charge transport layer 1 is deposited by a vapor phase method, and the charge transport layer 1 covers the P1. Area, such as Figure 2 As shown;

[0153] Further, the existing mask P1 pattern and the flexible or shaped substrate with the Lb mask thin line are placed into the vacuum chamber;

[0154] Furthermore, the vacuum degree of the vacuum chamber is evacuated to 1.10 -4 Pa, a charge transport layer 1 is prepared by a vapor deposition method;

[0155] Optionally, the vapor deposited charge transport layer 1 comprises at least an oxide or halide charge transport layer (such as NiO x 、TiO x 、ZnO、CuI、SnO 2 ), one or a combination of organic charge transport layers (such as TAPC, TPD, CuPc, MeO-2PACz, PTAA, NPB).

[0156] 3) Take out the flexible or shaped substrate with the hole transport layer and perform a second micro-shift, where the substrate is slightly shifted 0.0325 mm relative to the mask fine line Lb to form the mask fine line Lc, in the same direction as the moving direction of Lb relative to La, such as Figure 2 ②-⑦ show the area covered by the base;

[0157] Further, such as Figure 2 As shown in the ⑤-⑦ area, the right side of the isolated silver electrode is in direct contact with the left side layer of the perovskite activity of the next sub-cell;

[0158] Further, the substrate with the Lc mask thin line is placed in the vacuum chamber again, and the perovskite active layer is prepared by at least two-step gas phase method;

[0159] Furthermore, the vacuum degree of the vacuum chamber is evacuated to 1.10 -3 Pa, preparation of loose and uniform metal halide films;

[0160] Furthermore, the deposition rate of the metal halide is 0.04 nm / s, and the film thickness is 260 nm.

[0161] 4) placing the obtained metal halide film and organic ammonium halide powder together into a device cavity;

[0162] Furthermore, the perovskite active layer was prepared using a two-step gas phase method;

[0163] Further, the perovskite active layer includes one of methylamine lead iodine perovskite, methylamine tin iodine perovskite, cesium lead iodine perovskite, and formamidine lead iodine perovskite;

[0164] Furthermore, the preparation method of the perovskite active layer is one or a combination of physical vapor deposition and chemical vapor deposition;

[0165] Furthermore, the perovskite active layer covers the ①-② region in P1; the ①-② region is as follows Figure 2 .

[0166] 5) The substrate is slightly moved relative to the mask line for the third time, with a slight movement distance of 0.0325 mm to form a mask line Ld, with the same direction as the movement direction of Lc relative to Lb. Figure 2 As shown in ③-⑧;

[0167] Further, a charge transport layer 2 is deposited by a vapor phase method;

[0168] Optionally, the charge transport layer 2 includes at least an oxide or halide charge transport layer (such as NiO x 、TiO x 、ZnO、CuI、SnO 2 ), one or a combination of organic charge transport layers (such as TAPC, TPD, CuPc, MeO-2PACz, PTAA, NPB). Charge transport layer 2 and charge transport layer 1 are respectively hole and electron transport layers or electron and hole transport layers;

[0169] Furthermore, the region where the charge transport layer 2 is located covers the ②-③ region in P1; the ②-③ region is as follows Figure 2 ;

[0170] Furthermore, there is no need to provide an insulating adhesive layer between the charge transport layer 2 and the electrode 2 .

[0171] 6) The substrate is slightly moved relative to the mask fine line for the fourth time, with a slight movement distance of 0.0325 mm to form Le, and the direction is the same as the moving direction of Ld relative to Lc;

[0172] Further, a metal electrode silver is deposited, and the silver electrode is not in direct contact with the perovskite active layer;

[0173] Further, such as Figure 2 As shown in ④-⑤, the silver electrode contacts the transparent conductive ITO electrode to form P2.

[0174] 7) Remove the mask thin line Le, isolate the silver electrode interconnection of the sub-cell, and successfully produce a perovskite solar cell module with a high geometric filling factor;

[0175] Further, such as Figure 2 ⑤-⑨ area is shown as P3;

[0176] Further, P1, P2, and P3 show a width of 0.2925 mm and a geometric fill factor of 95.9%;

[0177] Optionally, the mask wires used to prepare the flexible and special-shaped perovskite solar cell modules include at least one or a combination of bendable ultra-fine copper wires, hard copper wires, stainless steel wires, and nickel-titanium alloy memory wires.

[0178] Example 4

[0179] The present invention provides a method for preparing a solar cell module with a high geometric fill factor on a flexible and special-shaped substrate. The steps of preparing the module by using a mask process are as follows:

[0180] 1) a mask thin line La is provided on a substrate, and a transparent conductive electrode 1 is formed by at least a vapor phase method;

[0181] Further, such as Figure 2 As stated, The area represents the formation of P1 on the substrate by the preset mask thin line La mask, with a width of 0.12 mm;

[0182] Furthermore, the transparent conductive electrode 1 is an indium-doped tin dioxide (ITO) transparent conductive film prepared by magnetron sputtering.

[0183] 2) Using the first slight displacement of the substrate, the substrate is slightly moved 0.12 mm relative to the mask fine line La to form the mask fine line Lb. Figure 2 ①-⑥As shown;

[0184] Further, a charge transport layer 1 is deposited by a vapor phase method, and the charge transport layer 1 covers the P1. Area, such as Figure 2 As shown;

[0185] Further, the existing mask P1 pattern and the flexible or shaped substrate with the Lb mask thin line are placed into the vacuum chamber;

[0186] Furthermore, the vacuum degree of the vacuum chamber is evacuated to 1.10 -4 Pa, a charge transport layer 1 is prepared by a vapor deposition method;

[0187] Optionally, the vapor deposited charge transport layer 1 comprises at least an oxide or halide charge transport layer (such as NiO x 、TiO x 、ZnO、CuI、SnO 2), one or a combination of organic charge transport layers (such as TAPC, TPD, CuPc, MeO-2PACz, PTAA, NPB).

[0188] 3) Take out the flexible or shaped substrate with the hole transport layer and perform a second micro-shift, where the substrate is slightly shifted by 0.040 mm relative to the mask line Lb to form the mask line Lc, in the same direction as the direction of Lb relative to La. Figure 2 ②-⑦ show the area covered by the base;

[0189] Further, such as Figure 2 As shown in the ⑤-⑦ area, the right side of the isolated silver electrode is in direct contact with the left side layer of the perovskite activity of the next sub-cell;

[0190] Further, the substrate with the Lc mask thin line is placed in the vacuum chamber again, and the perovskite active layer is prepared by at least two-step gas phase method;

[0191] Furthermore, the vacuum degree of the vacuum chamber is evacuated to 1.10 -3 Pa, preparation of loose and uniform metal halide films;

[0192] Furthermore, the deposition rate of the metal halide is 0.04 nm / s, and the film thickness is 260 nm.

[0193] 4) placing the obtained metal halide film and organic ammonium halide powder together into a device cavity;

[0194] Furthermore, the perovskite active layer was prepared using a two-step gas phase method;

[0195] Further, the perovskite active layer includes one of methylamine lead iodine perovskite, methylamine tin iodine perovskite, cesium lead iodine perovskite, and formamidine lead iodine perovskite;

[0196] Furthermore, the preparation method of the perovskite active layer is one or a combination of physical vapor deposition and chemical vapor deposition;

[0197] Furthermore, the perovskite active layer covers the ①-② region in P1; the ①-② region is as follows Figure 2 .

[0198] 5) The substrate is slightly moved relative to the mask line for the third time, with a slight movement distance of 0.035 mm to form a mask line Ld, with the same direction as the movement direction of Lc relative to Lb. Figure 2 As shown in ③-⑧;

[0199] Further, a charge transport layer 2 is deposited by a vapor phase method;

[0200] Optionally, the charge transport layer 2 includes at least an oxide or halide charge transport layer (such as NiO x 、TiO x 、ZnO、CuI、SnO 2 ), one or a combination of organic charge transport layers (such as TAPC, TPD, CuPc, MeO-2PACz, PTAA, NPB). Charge transport layer 2 and charge transport layer 1 are respectively hole and electron transport layers or electron and hole transport layers;

[0201] Furthermore, the region where the charge transport layer 2 is located covers the ②-③ region in P1; the ②-③ region is as follows Figure 2 ;

[0202] Furthermore, there is no need to provide an insulating adhesive layer between the charge transport layer 2 and the electrode 2 .

[0203] 6) The substrate is slightly moved relative to the mask fine line for the fourth time, with a slight movement distance of 0.040 mm to form Le, and the direction is the same as the moving direction of Ld relative to Lc;

[0204] Further, a metal electrode silver is deposited, and the silver electrode is not in direct contact with the perovskite active layer;

[0205] Further, such as Figure 2 As shown in ④-⑤, the silver electrode contacts the transparent conductive ITO electrode to form P2.

[0206] 7) Remove the mask thin line Le, isolate the silver electrode interconnection of the sub-cell, and successfully produce a perovskite solar cell module with a high geometric filling factor;

[0207] Further, such as Figure 2 ⑤-⑨ area is shown as P3;

[0208] Further, P1, P2, and P3 show a width of 0.310 mm and a geometric fill factor of 95.6%;

[0209] Optionally, the mask wires used to prepare the flexible and special-shaped perovskite solar cell modules include at least one or a combination of bendable ultra-fine copper wires, hard copper wires, stainless steel wires, and nickel-titanium alloy memory wires.

[0210] Comparative Example 1:

[0211] 1) The flexible substrate or the special-shaped substrate is cleaned with a glass cleaning agent and deionized water ultrasonically for 30 minutes in sequence and dried.

[0212] 2) Using the mask line La mask, a transparent conductive film is deposited onto the cleaned substrate to form a P1 insulating channel.

[0213] 3) Lb is formed by slightly shifting La relative to the substrate, with a distance of 0.03 mm. A hole transport layer is vapor deposited under the existing P1 and the mask fine line Lb.

[0214] 4) Lc is formed by slightly shifting Lb relative to the substrate. The direction of the slight shift is the same as that of Lb relative to La, and the slight shift distance is 0.03 mm.

[0215] 5) 0.461 g PbI2 and 0.159 g MAI were dissolved in 1 mL of anhydrous DMF, and 80 μL of DMSO and 80 μL of DMI were added. The mixture was heated to 100 °C and magnetically stirred for 90 minutes to form MAPbI 3 Solution.

[0216] 6) Use a spraying device to spray the dissolved MAPbI 3 The solution is sprayed onto the cleaned substrate.

[0217] 7) Sprayed MAPbI 3 The solution was placed on a hot plate at 70°C and annealed for 5 minutes, and then the temperature was set to 120°C and annealed for 30 minutes to obtain a perovskite film.

[0218] 8) forming Ld by slightly shifting Lc relative to the substrate, the direction of the slight shift being the same as that of Lc relative to Lb, and preparing an electron transport layer by a vapor phase method;

[0219] 9) The micro-movement of Ld relative to the substrate is used to form Le. The micro-movement direction is the same as that of Lc relative to Lb, and the micro-movement distance is 0.03 mm.

[0220] 10) Deposit silver electrodes using a vapor phase method.

[0221] 11) Remove Le and successfully prepare perovskite solar cell module.

[0222] Comparative Example Compared with the vapor phase method of the present invention, the perovskite active layer in the comparative example is prepared by a solution method. Due to the incomplete infiltration of the solution into the substrate during the spraying process, MAPbI 3 The agglomeration of the solution produces a large number of holes. The spraying method will produce a diffraction effect of the solution, resulting in a larger area of ​​the sub-cells occupied by P1, P2, and P3, which ultimately affects the output power of the device. However, the vapor phase method in the present invention prepares a uniform and dense perovskite film. Since there is no diffraction effect, the geometric filling factor of the module is increased, and the output power of the device is increased.

[0223] Comparative Example 2:

[0224] 1) The flexible substrate or the special-shaped substrate is cleaned with a glass cleaning agent and deionized water ultrasonically for 30 minutes in sequence and dried.

[0225] 2) Using the mask line La mask, a transparent conductive film is deposited on the cleaned substrate to form a P1 insulating channel.

[0226] 3) Set Lb at a position 0.05 mm away from La, set Lc at a position 0.05 mm away from Lb and 0.22 mm away from La, and remove the mask thin line La.

[0227] 4) Fix the positions of Lb and Lc and deposit a hole transport layer on the substrate by vacuum evaporation.

[0228] 5) On a substrate with a hole transport layer, a lead iodide film is obtained by vacuum vapor evaporation, and a perovskite active layer is prepared by a two-step vapor phase method.

[0229] 5) Place the fixed position Lb and Lc mask thin wires into the vacuum chamber and vacuum evaporate the electron transport layer C 60 .

[0230] 6) The mask thin line Lb is removed and a silver electrode is prepared by vacuum deposition.

[0231] 7) The mask thin line Lc is removed and the perovskite solar cell module is successfully prepared.

[0232] Compared with the solar cell module prepared by the movable mask thin wire in the comparative example and the present invention, the perovskite layer is in direct contact with the silver electrode during the preparation of the module in the comparative example, resulting in the generation of module leakage current, and the migration of iodine ions in the perovskite to the silver electrode damages the stability of the module. In contrast, the present invention uses a movable mask thin wire, and by slightly moving the mask thin wire Lc before depositing the electron transport layer, the electron transport layer covers the surface and side of the perovskite, isolates the silver electrode from the direct contact with the perovskite active layer, reduces the occurrence of leakage current, and inhibits the diffusion of iodine ions in the perovskite to the silver electrode, thereby enhancing the stability of the module.

[0233] Specifically, FIG3 shows the process of preparing a perovskite solar cell module on a flexible substrate using a mask method (scale = 200 μm). In the figure: FIG3 (a) sputtering ITO using a mask method; FIG3 (b) depositing NiO x Figure; Figure 3 (c) MAPbl 3 Perovskite film preparation diagram; Figure 3 (d) deposition of C 60 / BCP diagram; Figure 3(e) Module preparation completion diagram.

[0234] Using the mask thin line La mask, ITO is deposited on the pre-cleaned flexible substrate or special-shaped substrate, and the mask area formed on the substrate is P1, such as Figure 2 The mask fine line and the substrate undergo a first slight relative movement to form the mask fine line Lb. At this time, the hole transport layer MeO-2PACz is prepared by vacuum evaporation, and The area is the P1 part covered by the charge transport layer 1; the mask fine line and the substrate are slightly shifted relative to each other for the second time to form the mask fine line Lc. At this time, the MAPbI 3 FIG4 is a physical picture of a solar cell module prepared on a flexible substrate using a mask method according to an embodiment of the present invention. FIG4(a) is a MAPbI prepared on a flexible substrate using a two-step vapor phase method. 3 The actual picture of the film, the Figure 2 ①-② area is MAPbI 3 The P1 part is covered; the mask line and the substrate are slightly shifted for the third time, and the mask line is Ld after the slight shift. At this time, the vacuum thermal evaporation method is used to prepare C 60 / BCP, formed as Figure 2 ②-③ area is C 60 / BCP covers the P1 part; the mask fine line and the substrate are slightly shifted relative to each other for the fourth time, and the electrode silver is deposited by vapor phase method. The silver coverage area on the substrate can be divided into two parts, as shown in the figure. Figure 2 The ③-④ area is the silver-covered P1 area, and the ④-⑤ area is the connecting area P2. The function of the ④-⑤ area is to make the silver of the previous sub-cell directly contact with the ITO of the next sub-cell to form a series path. Remove the mask fine line Le to form the module structure P3. Figure 4 (b) shows a real picture of the module prepared on a flexible substrate using the fine-tunable mask fine line mask method.

[0235] FIG5 compares scanning electron microscope (SEM) characterization images of a perovskite film prepared by a spray coating method ( FIG5( a )) and a perovskite film prepared by a vapor phase method ( FIG5( b )) (scale bar = 2 μm).

[0236] The left figure shows that the perovskite film is prepared by spraying. The film is discontinuous, and there is no obvious grain structure under the scanning electron microscope after annealing. The solvent evaporates too quickly, resulting in holes and discontinuity in the film. The right figure shows the method for preparing the perovskite film in an example of the present invention. There is no solvent involved, and the gas-solid reaction method is used. After annealing, the film is uniform and the grains are large.

[0237] FIG. 6 is a diagram of a module P2 region ( Figure 6(i)-Figure 6(iii) ) and the P2 area of ​​the non-fine-tunable mask line preparation module ( Figure 6 (I) - Figure 6 (III) ) Surface energy spectrum analysis (EDS) characterization comparison chart.

[0238] Figure 6(i) shows the surface morphology of the P2 region of the module prepared using the fine-tunable mask line (scale = 2 μm), and Figures 6(ii) and 6(iii) are the distribution diagrams of the Ag element and the I element in the P2 region obtained by surface energy spectrum analysis, respectively. Figure 6(i)-Figure 6(iii) It can be seen that there are Ag and I elements in the P2 frame area, and the distribution of Ag element is significantly more than that of I element. The atomic percentages of the two are Ag:I=78.4:21.6.

[0239] FIG6(I) shows the surface morphology of the P2 region of the module prepared using a non-fine-tuning mask line. FIG6(II) and FIG6(III) are the distribution diagrams of the Ag element and the I element in the P2 region obtained by surface energy spectrum analysis. Figure 6 (I) - Figure 6 (III) It can be seen that there are Ag and I elements in the P2 frame area, and the distribution of Ag is slightly greater than that of I. The atomic percentages of the two are Ag:I=65.8:34.2. From the data in the figure, it can be seen that the atomic content of I in the P2 area of ​​the module prepared by fine-tuning the mask fine line is significantly lower than that of the module prepared without fine-shifting the mask fine line. The fine shift of the mask line isolates the direct contact between the perovskite film and silver, hinders the migration of iodine ions in the perovskite to the silver electrode, and plays the role of a barrier layer.

[0240] FIG. 7 is a graph showing the current density-voltage (JV) curves of solar cell modules prepared using the movable mask method ( FIG. 7( a )) and the non-removable mask method ( FIG. 7( b )) under simulated sunlight.

[0241] The module device structure prepared in the present invention is: PET / ITO / PTAA / MAPbI 3 / C 60 The left figure shows the current density-voltage (JV) curve of the two-subcell series module prepared by the relatively movable mask fine line mask method. Its open circuit voltage is 2.054V and the short circuit current density is 11.05mA / cm 2 , the fill factor is 0.59; the right figure shows the current density-voltage (JV) curve of the two sub-battery series module prepared by the mask fine line mask method without relative movement, with an open circuit voltage of 1.78V and a short circuit current density of 10.5mA / cm 2 , the fill factor is 0.38. It can be seen that when the mask fine line and the substrate do not move slightly relative to each other, the performance of the module decreases. The reason is that when the mask line and the substrate do not move slightly relative to each other, the perovskite active layer will come into direct contact with Ag, resulting in leakage current, which reduces the open circuit voltage and short circuit current density of the module.

[0242] FIG8 is a physical picture of a part of the device for preparing a solar cell module using the mask method.

[0243] Figure 8(a) is a physical picture of the whole device for preparing solar cell modules by mask method, which includes three main components, as shown in the right figure. Figure 8(b) is a substrate fixing fixture, which is used to fix the substrate to prevent the position of the substrate relative to the mask line from changing during vacuum evaporation or magnetron sputtering, thereby destroying the module structure; Figure 8(c) shows the 0.10mm mask line and substrate tightly fitted together to prevent the sputtered molecules from diffracting during magnetron sputtering; Figure 8(d) is a fine-tuning device, which can achieve an accuracy of 0.03mm during rotation. Rotating this device during the fine-tuning process will push the substrate and the mask line to move slightly relative to each other, which is an important part of this device.

[0244] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the disclosure disclosed herein. This application is intended to cover any variations, uses or adaptations of the present disclosure, which follow the general principles of the present disclosure and include common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present disclosure are indicated by the appended claims.

[0245] It should be understood that the present disclosure is not limited to the precise structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure should be limited by the appended claims.

Claims

1. A method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor, characterized in that: The method for preparing the flexible and special-shaped perovskite solar cell module with a high geometric filling factor adopts a vapor phase mask method to prepare P1, P2, and P3 patterns, specifically comprising: Step 1: using a mask thin line La mask, depositing the electrode 1 of the solar cell module on a pre-cleaned flexible substrate or a special-shaped substrate, and the mask area formed on the substrate is P1; Step 2, taking out the substrate from the vacuum chamber, slightly moving the mask thin line La and the substrate relative to each other for the first time, forming the mask thin line Lb after the movement, and preparing the charge transport layer 1; Step 3, take out the substrate in the vacuum chamber, and use the fine-tuning function of the substrate to slightly move the mask line Lb and the substrate for the second time in the same direction as the movement direction of the mask line Lb relative to the mask line La, and form the mask line Lc after the movement to prepare the perovskite light-absorbing layer; Step 4, the mask fine line Lc and the substrate are slightly moved for the third time in the same direction as the movement direction of the mask fine line Lc relative to the mask fine line Lb, and the mask fine line Ld is formed after the movement to prepare the charge transport layer 2; Step 5, the mask fine line Ld and the substrate are slightly moved relative to each other for the fourth time, and the direction is the same as the moving direction of the mask fine line Ld relative to the mask fine line Lc, and the mask fine line Le is formed after the movement, and the electrode 2 is prepared; Step six, remove the mask thin line Le, disconnect the electrode 2 of the sub-cell, form P3 on the substrate, and obtain a flexible and special-shaped perovskite solar cell module with a high geometric filling factor.

2. The method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor according to claim 1, characterized in that: The electrode 1 in step 1 is a transparent conductive electrode 1, including one of an indium-doped tin oxide film, an aluminum-doped zinc oxide, a boron-doped zinc oxide, a fluorine-doped tin oxide film, an oxide / ultra-thin metal / oxide film, and an ultra-thin metal / ultra-thin metal film; The electrode 1 is prepared by magnetron sputtering, chemical vapor deposition, vacuum evaporation or a combination of these methods.

3. The method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor according to claim 1, characterized in that: The first relative micro-movement distance in step 2 is 0.025-0.12 mm; after the movement to form the mask fine line Lb, it is necessary to further perform: at least depositing the charge transport layer 1 by a vapor phase method; The substrate with the mask area P1 and the mask fine line Lb is placed in a vacuum chamber, and the vacuum degree of the vacuum chamber is evacuated to 5·10 -4 -1·10 -4 Pa, the charge transport layer 1 is deposited in a vacuum environment.

4. The method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor according to claim 3, characterized in that: The vapor deposited charge transport layer 1 comprises: NiO in an oxide or halide charge transport layer x 、TiO x , ZnO, CuI, SnO2 or a combination thereof; the organic charge transport layer is TAPC, TPD, CuPc, MeO-2PACz, PTAA, NPB or a combination thereof.

5. The method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor according to claim 1, characterized in that: The second micro-movement distance in step 3 is 0.025-0.040 mm. After the mask fine line Lc is formed after the movement, it is necessary to further perform: preparing the perovskite active layer by a two-step gas phase method or preparing the perovskite active layer by a multi-source co-evaporation method; The two-step gas phase method for preparing the perovskite active layer comprises: Putting the substrate with the charge transport layer 1 into the vacuum chamber again; The vacuum degree of the vacuum chamber is pumped to 5.10 -3 -1·10 -3 Pa, prepare loose and uniform metal halide films by vapor deposition; The substrate with the metal halide film is removed and placed in a vacuum device cavity together with the organic ammonium halide powder; The metal halide is one or a combination of lead chloride, lead bromide, lead iodide, stannous chloride, stannous bromide, stannous iodide and stannous fluoride; The organic ammonium halide is one or a combination of methylammonium chloride, ethylammonium chloride, methylammonium chloride, ethylammonium bromide, methylammonium bromide, dimethylammonium bromide, methylammonium iodide, ethylammonium iodide, methylammonium chloride and dimethylammonium iodide; The perovskite active layer comprises one of methylamine lead iodine perovskite, methylamine tin iodine perovskite, cesium lead iodine perovskite, formamidinium lead iodine perovskite, methylamine lead chloroperovskite, methylamine lead bromine perovskite, formamidinium lead chloroperovskite, and formamidinium lead bromine perovskite; The preparation method of the perovskite active layer is a physical vapor deposition method, a chemical vapor deposition method, or a combination of the two.

6. The method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor according to claim 1, characterized in that: In step 4, the third micro-shift distance is 0.025-0.040 mm. After the mask fine line Ld is formed after the shift, the following steps are required: At least a charge transport layer 2 is deposited by a vapor phase method; No insulating adhesive layer is provided between the charge transport layer 2 and the electrode 2 .

7. The method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor according to claim 1, characterized in that: In step 5, the fourth relative micro-movement distance is 0.02-0.05 mm. After the thin mask line Le is formed after the movement, the following steps are required: Depositing at least an electrode 2 by a vapor phase method; Electrode 2 is in direct contact with electrode 1; forming a series path.

8. The method for preparing a flexible and special-shaped perovskite solar cell module with a high geometric filling factor according to claim 1, characterized in that: The mask thin wires La-Le include one or more of ultra-fine iron wires, bendable ultra-fine copper wires, hard copper wires, stainless steel wires, and nickel-titanium alloy memory wires.

9. A flexible and special-shaped perovskite solar cell with a high geometric filling factor prepared according to the preparation method according to any one of claims 1 to 8.

10. A flexible and special-shaped perovskite solar cell with a high geometric filling factor as claimed in claim 9 is used in a hybrid power generation grid network.

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