Exposure machine, method and device for analyzing the position of a mask

Abstract

The application discloses an exposure machine, a shutter position analysis method and device. The exposure machine comprises a glass substrate, a shutter arranged opposite to the glass substrate, and a mask plate arranged between the shutter and the substrate. The mask plate comprises an exposure area, a non-exposure area and a scale. The scale comprises a scale body and a scale mark arranged on the scale body. The scale mark reference line coincides with the boundary line of the exposure area and the non-exposure area. The measurement range of the scale mark is greater than the size of the diffraction area of the shutter. The shutter is used for shielding the non-exposure area, and the edge of the shutter coincides with the boundary line. In the embodiment of the application, the scale is arranged to monitor the shutter position accuracy. If an abnormality is found, it can be corrected in time to avoid the scrap after the defective product is produced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to an exposure machine, a baffle position analysis method and device. BACKGROUND

[0002] When a mask is used to make a pattern on a glass substrate, since all areas of the mask are not needed for each exposure, a baffle is used to shield the non-exposure areas above and below the mask to prevent the pattern on the substrate from being too large or too small. However, the baffle is driven by a machine, and the driving position is affected by mechanical factors, which may deviate in production. When the position of the baffle deviates greatly from the preset position, the pattern on the glass substrate will be affected, resulting in a decrease in the quality of the final product.

[0003] Currently, for a CF (Color Filter) substrate, the position of the baffle is not monitored in the early stage, the baffle position is misplaced or deviates, and the problem cannot be monitored in time. Only when the product is made can the problem be found, resulting in the scrap of defective products. SUMMARY

[0004] The present application provides an exposure machine, a baffle position analysis method and device, which are used to set a scale to monitor the position accuracy of the baffle. If an abnormality is found, it can be corrected in time to avoid the scrap of defective products.

[0005] In a first aspect, the present application provides an exposure machine, comprising:

[0006] a glass substrate;

[0007] a baffle, disposed opposite to the glass substrate;

[0008] a mask, disposed between the baffle and the substrate, the mask comprising an exposure area, a non-exposure area and a scale, the scale comprising a scale body and a scale mark disposed on the scale body, a scale reference line of the scale mark coinciding with a boundary line between the exposure area and the non-exposure area, a measurement range of the scale mark being greater than the size of a diffraction area of the baffle, the baffle being used to shield the non-exposure area, and an edge of the baffle coinciding with the boundary line.

[0009] In this embodiment, the scale is used to monitor the position accuracy of the baffle. If an abnormality is found, it can be corrected in time to avoid the scrap of defective products, shorten the tact time and increase the production capacity.

[0010] In some embodiments, the mask comprises a plurality of scales.

[0011] In the embodiment, the edge line of the diffraction region of the baffle is not a completely regular and smooth line, but has a certain fluctuation. Multiple scales are arranged, and the projection information of the multiple scales is analyzed and monitored to avoid large errors caused by monitoring the position of the baffle by a single scale.

[0012] In some embodiments, the multiple scales are arranged at intervals along the extension direction of the boundary line.

[0013] In the embodiment, the multiple scales are arranged at intervals along the extension direction of the boundary line, the edge lines at different positions of the diffraction region are collected, and the errors caused by the fluctuation of the edge of the diffraction region are balanced.

[0014] In some embodiments, the numbers of the scale start from the scale number at the scale reference line and increase or decrease to both sides in turn.

[0015] In the embodiment, the scale reference line of the scale is the center line of the image of the baffle diffraction region projected on the glass substrate when the baffle is at the preset position, that is, the edge of the baffle coincides with the boundary line. The scale reference line is set as the center line of the scale, so that whether the baffle deviates can be determined more intuitively and quickly.

[0016] In a second aspect, the application provides a baffle position analysis method, comprising:

[0017] Controlling exposure light to irradiate a mask plate of the exposure machine;

[0018] Obtaining scale information of a glass substrate exposed on the exposure machine;

[0019] Analyzing the baffle position of the baffle of the exposure machine according to the scale information;

[0020] If the baffle position deviates from the preset position, adjusting the baffle according to the baffle position.

[0021] In the embodiment, the scale is arranged to monitor the position accuracy of the baffle. If an abnormality is found, it can be corrected in time to avoid the scrap of defective products, shorten the tact time, and increase the production capacity.

[0022] In some embodiments, the obtaining of the scale information of the glass substrate exposed on the exposure machine comprises:

[0023] Obtaining scale information of multiple scales exposed on the glass substrate of the exposure machine;

[0024] Determining the scale information according to the scale information of the multiple scales.

[0025] In the embodiment, the edge line of the diffraction area of the baffle is not a complete regular and smooth line, but has a certain fluctuation, a plurality of scales are arranged, and the projection information of the plurality of scales is analyzed and monitored to avoid a large error caused by monitoring the position of the baffle by using a single scale.

[0026] In some embodiments, the baffle position of the baffle of the exposure machine is analyzed according to the scale information, including:

[0027] The scale reference line of the scale is determined according to the scale information;

[0028] The baffle position of the baffle is analyzed according to the scale reference line.

[0029] In the embodiment, the scale reference line of the scale is the center line of the image of the scale projected on the diffraction area of the baffle on the glass substrate when the baffle is at the preset position, that is, the edge of the baffle coincides with the boundary line, and the scale reference line is used as a reference to more intuitively and quickly determine whether the baffle is shifted.

[0030] In some embodiments, the baffle position of the baffle is analyzed according to the scale reference line, including:

[0031] If the scale reference line is the center line of the scale information, the baffle position is a preset position;

[0032] If the scale reference line is not the center line of the scale information, the baffle position of the baffle is analyzed according to the offset information of the scale reference line.

[0033] In the embodiment, if the scale reference line is not the center line of the scale information, it indicates that the edge of the baffle does not coincide with the boundary line between the exposure area and the non-exposure area, the baffle position is not a preset position, and the baffle is shifted. The scale reference line corresponds to the edge of the baffle, and the offset of the scale reference line can be used to quickly confirm the offset of the edge of the baffle.

[0034] In some embodiments, the offset information includes an offset direction and an offset amount, and if the scale reference line is not the center line of the scale information, the baffle position of the baffle is analyzed according to the offset amount of the scale reference line, including:

[0035] If the scale reference line is not the center line of the scale information, the baffle position is offset from the preset position;

[0036] The scale data on both sides of the scale reference line is determined according to the scale information;

[0037] The offset direction and the offset amount of the scale reference line are analyzed according to the scale data on both sides;

[0038] According to the offset direction and the offset amount, a shutter position of the shutter is analyzed.

[0039] In the embodiment, the scale reference line corresponds to the edge of the shutter, and the offset direction and the offset amount of the scale reference line are the offset direction and the offset amount of the shutter, so that the shutter position of the shutter is quickly determined.

[0040] In a third aspect, the present application provides a shutter position analysis device, comprising:

[0041] An exposure module is configured to control exposure light to irradiate a mask of the exposure machine.

[0042] An information acquisition module is in communication connection with the exposure module and is configured to acquire scale information of a scale exposed on a glass substrate of the exposure machine.

[0043] A position analysis module is in communication connection with the information acquisition module and is configured to analyze a shutter position of a shutter of the exposure machine according to the scale information.

[0044] A shutter adjustment module is in communication connection with the position analysis module and is configured to adjust the shutter according to the shutter position if the shutter position deviates from a preset position.

[0045] In the embodiment, the scale is configured to monitor the shutter position accuracy, and if an abnormality is found, the abnormality can be corrected in time to avoid defective products from being scrapped, shorten the tact time, and increase the production capacity.

[0046] In some embodiments, the information acquisition module is further configured to acquire scale information of a plurality of scales exposed on the glass substrate of the exposure machine, and determine the scale information according to the scale information of the plurality of scales.

[0047] In the embodiment, the edge line of the diffraction region of the shutter is not a completely regular and smooth line, but has a certain fluctuation, a plurality of scales are configured, and the projection information of the plurality of scales is analyzed and monitored to avoid a large error caused by monitoring the position of the shutter by a single scale.

[0048] In some embodiments, the position analysis module is further configured to determine a scale reference line of the scale according to the scale information, and analyze the shutter position of the shutter according to the scale reference line.

[0049] In the embodiment, the scale reference line of the scale is the center line of the image of the scale projected onto the diffraction region of the shutter on the glass substrate when the shutter is in the preset position, that is, the edge of the shutter coincides with the boundary line, and the scale reference line is taken as a reference to more intuitively and quickly determine whether the shutter deviates.

[0050] In some embodiments, the position analysis module is further configured to: if the scale reference line is a center line of the scale information, the shutter position is a preset position; and if the scale reference line is not the center line of the scale information, analyzing the shutter position of the shutter according to offset information of the scale reference line.

[0051] In the embodiment, if the scale reference line is not the center line of the scale information, it indicates that the edge of the shutter does not coincide with the boundary line between the exposure area and the non-exposure area, the shutter position is not the preset position, the shutter is offset, the scale reference line corresponds to the edge of the shutter, and the offset of the scale reference line can be used to quickly confirm the offset of the edge of the shutter.

[0052] In some embodiments, the position analysis module is further configured to: if the scale reference line is not the center line of the scale information, the shutter position is offset from the preset position; determining scale data on both sides of the scale reference line according to the scale information; analyzing the offset direction and the offset amount of the scale reference line according to the scale data on both sides; and analyzing the shutter position of the shutter according to the offset direction and the offset amount.

[0053] In the embodiment, the scale reference line corresponds to the edge of the shutter, the offset direction and the offset amount of the scale reference line are the offset direction and the offset amount of the shutter, and thus the shutter position of the shutter can be quickly determined.

[0054] The exposure machine, the shutter position analysis method and the shutter position analysis device provided in the embodiments of the present application can set a scale on a mask, the measurement range of the scale is greater than the size of the diffraction area of the shutter, the scale monitors the accuracy of the shutter position, and if an abnormality is found, the abnormality can be corrected in time to avoid the production of defective products. BRIEF DESCRIPTION OF DRAWINGS

[0055] The technical solutions and other beneficial effects of the present application will become apparent through the following detailed description of the specific embodiments of the present application in conjunction with the accompanying drawings.

[0056] Figure 1 FIG. 1 is a schematic diagram of an exposure machine in the embodiments of the present application;

[0057] Figure 2 FIG. 2 is a schematic diagram of a scale projection on a glass substrate in the embodiments of the present application;

[0058] Figure 3 FIG. 3 is a flowchart of a shutter position analysis method in the embodiments of the present application;

[0059] Figure 4 FIG. 4 is a structural schematic diagram of a shutter position analysis device in the embodiments of the present application.

[0060] REFERENCE NUMERALS:

[0061] 1, baffle; 2, mask; 21, exposure area; 22, non-exposure area; 23, scale; 3, glass substrate. DETAILED DESCRIPTION

[0062] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work are within the scope of protection of the present application.

[0063] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like indicate the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified and limited.

[0064] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements or the interaction relationship between two elements. For a person of ordinary skill in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0065] In the present application, unless specifically stated and limited otherwise, a first feature "on" or "under" a second feature can include that the first and second features are directly in contact, or that the first and second features are not directly in contact but are in contact through another feature between them. Moreover, the first feature "on", "above" and "over" the second feature includes that the first feature is directly above and obliquely above the second feature, or only means that the first feature is higher than the second feature in horizontal height. The first feature "under", "below" and "underneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or only means that the first feature is lower than the second feature in horizontal height.

[0066] The following disclosure provides many different embodiments, or examples, for implementing different structures of the present application. For the purpose of simplification, the components and arrangements of specific examples are described in the following. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeatedly refer to numbers and / or letters in different examples, and such repetition is for the purpose of simplification and clarity, which does not indicate the relationship between the various embodiments and / or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but those skilled in the art can realize the application of other processes and / or the use of other materials.

[0067] Please refer to Figure 1 The embodiment of the present application provides an exposure machine, which comprises a glass substrate 3, a baffle 1 and a mask 2. The baffle 1 is arranged opposite to the glass substrate 3, and the mask 2 is arranged between the baffle 1 and the substrate.

[0068] The mask 2 comprises an exposure area 21, a non-exposure area 22 and a ruler 23. The exposure machine needs to project the image of the exposure area 21 of the mask 2 onto the glass substrate 3, while avoiding the projection of the image of the non-exposure area 22 onto the glass substrate 3. The baffle 1 is arranged to shield the non-exposure area 22, so that the edge of the baffle 1 coincides with the boundary line between the exposure area 21 and the non-exposure area 22, thereby ensuring that the non-exposure area 22 is shielded while avoiding affecting the projection of the pattern of the exposure area 21. It is necessary to monitor whether there is a deviation of the baffle 1 relative to the preset position, that is, to judge whether the edge of the baffle 1 coincides with the boundary line between the exposure area 21 and the non-exposure area 22.

[0069] The mask 2 is provided with the ruler 23, and the image projected onto the glass substrate 3 by the ruler 23 is used to judge whether there is a deviation of the position of the baffle 1. In order to quantitatively analyze the position of the baffle 1, the ruler 23 comprises a ruler body and a scale arranged on the ruler body, and the position of the baffle 1 is analyzed based on the scale in the image projected onto the glass substrate 3 by the ruler 23. Further, the scale is provided with a scale reference line, and the scale reference line can be marked accordingly. The scale reference line is taken as a reference object, so that the position of the baffle 1 can be more intuitively understood.

[0070] In addition, since the CF substrate is adopted with positive PR (Photoresist), the light diffracts through the edge of the baffle 1, the intensity of the light in the diffraction area is lower than that in the non-diffraction area, but the pattern can still be exposed. If the measurement range of the scale is less than the size of the diffraction area of the baffle 1, when the position of the baffle 1 is offset, but the image of the scale 23 exposed on the glass substrate 3 does not offset out of the diffraction area, it cannot be inferred whether the position of the baffle 1 is offset. Therefore, the measurement range of the scale is greater than the size of the diffraction area of the baffle 1, which ensures that the offset of the position of the baffle 1 can be determined by the change of the scale of the scale 23 exposed on the glass substrate 3.

[0071] It should be noted that the image of the scale 23 exposed on the glass substrate 3 within the diffraction area range is based on the edge of the baffle 1 as the center, so the scale reference line is taken as the reference object. If the center line of the image of the scale 23 exposed in the diffraction area range is taken as the scale reference line when the baffle 1 is not offset, the offset state of the baffle 1 can be quickly determined based on the scale reference line after the baffle 1 is offset. Therefore, the scale reference line is set as the edge of the baffle 1 at the preset position, that is, the scale reference line of the scale coincides with the boundary line between the exposure area 21 and the non-exposure area 22.

[0072] In the embodiment, the scale 23 is provided to monitor the position accuracy of the baffle 1. If an abnormality is found, it can be corrected in time to avoid scrap after defective products are produced, shorten the tact time, and increase the production capacity. In addition, the embodiment is suitable for exposure of each film layer of the CF substrate.

[0073] In one embodiment, as shown in FIG. 1, the mask 2 includes a plurality of scales 23, and the projection information of the plurality of scales 23 is analyzed and monitored. Figure 2 It should be noted that, based on the setting of the exposure area 21 and the non-exposure area 22 on the mask 2, a plurality of baffles 1 can be provided, and one or more scales 23 corresponding to each baffle 1 need to be provided for monitoring. The scales 23 corresponding to different baffles 1 are provided with different marks for monitoring and analysis.

[0074] In one embodiment, when the mask 2 includes a plurality of scales 23, the scale reference line of the scale of each scale 23 coincides with the boundary line between the exposure area 21 and the non-exposure area 22, so the plurality of scales 23 are arranged at intervals along the extension direction of the boundary line. The plurality of scales 23 can be uniformly arranged at the same interval, or arranged at any random interval or arranged at intervals according to a certain functional relationship, which is not limited in the embodiment.

[0075] In one embodiment, since the scale reference line of the scale is the position of the baffle 1 when the edge of the baffle 1 coincides with the boundary line, that is, the preset position, the center line of the image of the baffle 1 diffraction region projected on the glass substrate 3, in order to more intuitively monitor the change of the baffle 1, the scale on the scale 23 is set to take the scale reference line as the symmetry axis, and the scale numbers are sequentially increased or decreased from the scale number at the scale reference line, but the specific setting method is not limited in this embodiment. For example, the scale at the scale reference line is set to 0, the scale extending to one side of the scale reference line is sequentially 1, 2, 3, and the scale extending to the other side of the scale reference line is sequentially -1, -2, -3. Here, 1, 2, 3 represent a measurement unit, which can be 1mm or 2mm, depending on the accuracy of the position of the baffle 1, which is not limited in this embodiment.

[0076] This embodiment sets the scale 23 on the mask 2 to monitor the position accuracy of the baffle 1 in the CF substrate, so that abnormalities can be corrected in time to avoid scrap after defective products are produced.

[0077] Please refer to Figure 3 The baffle position analysis method provided by the embodiment of the application comprises steps S101-S104, which are specifically as follows.

[0078] S101, control the exposure light to irradiate the mask of the exposure machine.

[0079] Specifically, the exposure light is controlled to irradiate the mask of the exposure machine, so that the pattern on the mask is projected onto the glass substrate, and at the same time, the scale on the mask is also projected onto the glass substrate. The position of the baffle is continuously analyzed and monitored based on the scale information on the glass substrate. It should be noted that if the glass substrate is a CF substrate, the CF substrate has multiple film layers, and the embodiment is applicable to the baffle position monitoring of all film layers of the CF substrate. In addition, different film layers correspond to different scales with marks, so as to intuitively understand the baffle positions of the film layers of the CF substrate.

[0080] S102, acquire the scale information on the glass substrate exposed in the exposure machine.

[0081] Specifically, the scale information on the glass substrate exposed in the exposure machine is acquired. Since the CF substrate is a positive PR, the diffraction region of the baffle on the glass substrate will also project the pattern on the mask. In this embodiment, the position of the baffle of the CF substrate is mainly determined according to the projection information of the edge position of the diffraction region. The light is diffracted through the edge of the baffle, and the intensity of the light in the diffraction region is lower than that in the non-diffraction region, but the pattern can still be exposed. Therefore, the edge position of the scale information acquired on the glass substrate is actually the projection image of the edge position of the diffraction region.

[0082] In one embodiment, the step includes: S201, acquiring scale information of a plurality of scales exposed on a glass substrate of the exposure machine; and S202, determining the scale information according to the scale information of the plurality of scales.

[0083] Specifically, since the edge line of the diffraction region of the baffle is not a completely regular and smooth line, but has a certain fluctuation, the position of the baffle may have a large error when monitored by a single scale, and therefore the mask includes a plurality of scales, and the position of the baffle is monitored and analyzed based on the projection information of the plurality of scales. The scale information of a plurality of scales exposed on a glass substrate of the exposure machine is acquired, and the scale information is determined by comprehensively analyzing the scale information of the plurality of scales. The scale information is the scale range projected on the diffraction region of the baffle.

[0084] S103, analyzing the baffle position of the baffle of the exposure machine according to the scale information.

[0085] Specifically, the baffle position of the baffle of the exposure machine is analyzed according to the scale information of the scales projected on the glass substrate, in particular, the scale range projected on the diffraction region of the baffle.

[0086] It should be noted that the scale projected on the edge of the diffraction region of the baffle can be determined according to the scale information of the scales projected on the glass substrate, and then the scale range of the scales projected on the diffraction region of the baffle is calculated based on the size of the diffraction region of the baffle. The size of the diffraction region of the baffle is related to the structure of the baffle, the distance between the baffle and other components, and the illumination mode of the exposure light, and can be directly set to be acquired.

[0087] In one embodiment, the step includes: S301, determining a scale reference line of the scale according to the scale information; and S302, analyzing the baffle position of the baffle according to the scale reference line.

[0088] Specifically, the scale reference line of the scale has a corresponding mark, so that the scale reference line of the scale is determined according to the scale information of the scales projected on the glass substrate, and the offset state of the baffle is analyzed with the scale reference line as a reference object, and then the baffle position of the baffle is obtained.

[0089] In one embodiment, step S302, analyzing the baffle position of the baffle according to the scale reference line, includes: S401, if the scale reference line is a center line of the scale information, the baffle position is a preset position; and S402, if the scale reference line is not a center line of the scale information, the baffle position of the baffle is analyzed according to the offset information of the scale reference line.

[0090] Specifically, the scale reference line is set as the edge of the shutter at the preset position, that is, the scale reference line of the scale coincides with the boundary line between the exposure area and the non-exposure area. Taking the scale reference line as the reference object, since the scale information is projected on the scale range of the diffraction area of the shutter, the center line of the scale information is the position corresponding to the edge of the shutter. If the scale reference line is the center line of the scale information, that is, the scale reference line corresponds to the edge of the shutter, that is, the edge of the shutter coincides with the boundary line between the exposure area and the non-exposure area, the shutter position is the preset position, and the shutter does not deviate.

[0091] If the scale reference line is not the center line of the scale information, it indicates that the edge of the shutter does not coincide with the boundary line between the exposure area and the non-exposure area, and the shutter position is not the preset position. Therefore, the shutter deviates, and the shutter position of the shutter is analyzed according to the deviation information of the scale reference line relative to the center line of the scale information.

[0092] In one embodiment, in step S402, if the scale reference line is not the center line of the scale information, the shutter position of the shutter is analyzed according to the deviation information of the scale reference line, and the deviation information includes a deviation direction and a deviation amount, including: S501, if the scale reference line is not the center line of the scale information, the shutter position deviates from the preset position; S502, determining the scale data on both sides of the scale reference line according to the scale information; S503, analyzing the deviation direction and the deviation amount of the scale reference line according to the scale data on both sides; and S504, analyzing the shutter position of the shutter according to the deviation direction and the deviation amount.

[0093] Specifically, if the scale reference line is not the center line of the scale information, it indicates that the edge of the shutter does not coincide with the boundary line between the exposure area and the non-exposure area, and the shutter position deviates from the preset position. Since the scale information is projected on the scale range of the diffraction area of the shutter, the scale data on both sides of the scale reference line is determined according to the scale information. For example, the edge scale data on one side of the scale reference line of certain scale information is -2, and the edge scale data on the other side is 4. The value of the scale reference line is 0, and the value of the center line of the scale information is 1. Therefore, the value of the scale reference line is different from that of the center line of the scale information, and the shutter position deviates from the preset position.

[0094] The deviation information of the scale reference line includes a deviation direction and a deviation amount. The deviation direction and the deviation amount of the scale reference line relative to the center line of the scale information are analyzed according to the scale data on both sides. For example, the edge scale data on one side of the scale reference line of certain scale information is -2, and the edge scale data on the other side is 4. The value of the scale reference line is 0, and the value of the center line of the scale information is 1. Relative to the center line of the scale information, the scale reference line deviates in the direction from scale 4 to scale -2, and the deviation amount is 1.

[0095] Since the center line of the scale information is the position corresponding to the edge of the baffle, the scale reference line is the position corresponding to the edge of the baffle when the baffle is at the preset position, the baffle position of the baffle is analyzed based on the offset direction and offset amount of the scale reference line relative to the center line of the scale information, for example, the edge scale data on one side of the scale reference line of certain scale information is -2, the edge scale data on the other side is 4, the value of the scale reference line is 0, and the value of the center line of the scale information is 1, relative to the center line of the scale information, the scale reference line is offset along the extension direction of scale 4 to scale -2, and the offset amount is 1, and correspondingly, the center line of the scale information is offset along the extension direction of scale -2 to scale 4 relative to the scale reference line, and the offset amount is 1, that is, the baffle is offset along the extension direction of scale -2 to scale 4, and the offset amount is 1.

[0096] In S104, if the baffle position deviates from the preset position, the baffle is adjusted according to the baffle position.

[0097] Specifically, if it is analyzed that the baffle position deviates from the preset position, the baffle is adjusted according to the baffle position, that is, the baffle is adjusted according to the offset direction and offset amount.

[0098] In the embodiment, the scale is used to monitor the accuracy of the baffle position, and if an abnormality is found, it can be corrected in time to avoid the production of defective products, shorten the tact time, and increase the production capacity. In addition, the embodiment is suitable for exposure of each film layer of the CF substrate. At the same time, the position of the baffle is analyzed based on the offset of the scale projected in the diffraction region, so as to quickly determine the offset state of the baffle.

[0099] In order to better implement the baffle position analysis method in the embodiment of the present application, based on the baffle position analysis method, a baffle position analysis device is further provided in the embodiment of the present application, as shown in Figure 4 The baffle position analysis device 100 comprises:

[0100] An exposure module 110 is configured to control exposure light to irradiate a mask plate of the exposure machine.

[0101] An information acquisition module 120 is in communication connection with the exposure module 110 and is configured to acquire scale information exposed on a glass substrate of the exposure machine.

[0102] A position analysis module 130 is in communication connection with the information acquisition module 120 and is configured to analyze a baffle position of a baffle of the exposure machine according to the scale information.

[0103] A baffle adjustment module 140 is in communication connection with the position analysis module 130 and is configured to adjust the baffle according to the baffle position if the baffle position deviates from a preset position.

[0104] In some embodiments of the present application, the information obtaining module 120 is further configured to obtain scale information of a plurality of scales exposed on a glass substrate of the exposure machine; and determine the scale information according to the scale information of the plurality of scales.

[0105] In some embodiments of the present application, the position analyzing module 130 is further configured to determine a scale reference line of the scale according to the scale information; and analyze the shutter position of the shutter according to the scale reference line.

[0106] In some embodiments of the present application, the position analyzing module 130 is further configured to, if the scale reference line is a center line of the scale information, the shutter position is a preset position; and if the scale reference line is not the center line of the scale information, analyze the shutter position of the shutter according to offset information of the scale reference line.

[0107] In some embodiments of the present application, the position analyzing module 130 is further configured to, if the scale reference line is not the center line of the scale information, the shutter position is offset from a preset position; determine scale data on both sides of the scale reference line according to the scale information; analyze the offset direction and the offset amount of the scale reference line according to the scale data on both sides; and analyze the shutter position of the shutter according to the offset direction and the offset amount.

[0108] In the above embodiments, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the relevant description of other embodiments.

[0109] Each technical feature of the above embodiments can be combined arbitrarily, and in order to make the description concise, each technical feature of the above embodiments is not described in all possible combinations, however, as long as the combination of these technical features does not exist contradictory, it should be considered as the scope of the present application.

[0110] The above has introduced in detail the exposure machine, the shutter position analyzing method and the device provided by the embodiments of the present application, the principle and the implementation mode of the present application have been described by applying specific examples in this paper, the above embodiment is only used to help understanding the method of the present application and its core idea; at the same time, for the person skilled in the art, according to the idea of the present application, the specific implementation mode and the application range will have the change, on the basis of the above, the content of the specification should not be understood as the limitation of the present application.

Claims

1. An exposure machine, characterized in that, include: Glass substrate; The glass substrate is a color filter substrate and uses positive photoresist; A baffle is disposed opposite to the glass substrate; A photomask is disposed between the baffle and the substrate. The photomask includes an exposure area, a non-exposure area, and multiple scales. Each scale includes a scale body and graduations on the scale body. The reference line of the graduations coincides with the boundary line between the exposure area and the non-exposure area. The measurement range of the graduations is larger than the size of the diffraction area of ​​the baffle. The baffle is used to block the non-exposure area, and the edge of the baffle coincides with the boundary line. The photomask is analyzed and monitored based on the projection information of the multiple scales.

2. The exposure machine as described in claim 1, characterized in that, The plurality of scales are spaced apart along the extension direction of the dividing line.

3. The exposure machine as described in claim 1, characterized in that, The numbers on the scale begin at the scale reference line and increase or decrease sequentially to both sides.

4. A baffle position analysis method, applied to the exposure machine according to any one of claims 1 to 3, characterized in that, include: Control the exposure light to illuminate the photomask of the exposure machine; Obtain scale information on the glass substrate exposed on the exposure machine; The position of the baffle of the exposure machine is analyzed based on the scale information; If the position of the baffle deviates from the preset position, the baffle is adjusted according to the position of the baffle.

5. The baffle position analysis method as described in claim 4, characterized in that, The step of obtaining scale information on the glass substrate exposed on the exposure machine includes: Obtain the scale information of multiple scales exposed on the glass substrate of the exposure machine; The scale information is determined based on the scale information of the multiple scales.

6. The baffle position analysis method as described in claim 4, characterized in that, The step of analyzing the baffle position of the exposure machine based on the scale information includes: The scale reference line is determined based on the scale information; The position of the baffle is analyzed based on the scale reference line.

7. The baffle position analysis method as described in claim 6, characterized in that, The step of analyzing the baffle position based on the scale reference line includes: If the scale reference line is the center line of the scale information, then the baffle position is a preset position; If the scale reference line is not the center line of the scale information, then the position of the baffle is analyzed based on the offset information of the scale reference line.

8. The baffle position analysis method as described in claim 7, characterized in that, The offset information includes the offset direction and offset amount. If the scale reference line is not the center line of the scale information, then the position of the baffle is analyzed based on the offset amount of the scale reference line, including: If the scale reference line is not the center line of the scale information, the baffle position is offset from a preset position; The scale data on both sides of the scale reference line are determined based on the scale information; The offset direction and offset amount of the scale reference line are analyzed based on the scale data on both sides. The position of the baffle is analyzed based on the offset direction and the offset amount.

9. A baffle position analysis device, characterized in that, The apparatus, applied to the exposure machine according to any one of claims 1 to 3, comprises: An exposure module is used to control the exposure light to illuminate the photomask of the exposure machine; The information acquisition module is communicatively connected to the exposure module and is used to acquire scale information exposed on the glass substrate of the exposure machine. The position analysis module is communicatively connected to the information acquisition module and is used to analyze the position of the baffle of the exposure machine based on the scale information. The baffle adjustment module is communicatively connected to the position analysis module and is used to adjust the baffle according to the baffle position if the baffle position deviates from the preset position.

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