Method for processing a bonded substrate

Abstract

The present application provides a processing method of a bonded substrate, which can expose a part of a terminal portion of each bonded substrate in a state of a mother substrate. The processing method of a bonded substrate of a first substrate and a second substrate includes the following steps: setting a removal target portion, which is perpendicular to an extension direction of a non-contact space between the first substrate and the second substrate, narrower toward the non-contact space, at a portion of the second substrate along the non-contact space; a scribing step of forming a scribe line on a non-bonding surface of the second substrate and extending a crack from the scribe line along a boundary surface of the removal target portion; a breaking step of abutting a breaking rod from the first substrate side and further extending the crack to separate the removal target portion from the second substrate at the boundary surface; and a removal step of removing the separated removal target portion to expose a portion of the non-contact space in the first substrate.

Description

Technical Field

[0001] This invention relates to the processing of bonding substrates, and particularly to the processing of a mother substrate (bonding mother substrate) from which individual pieces obtained by splitting are used as bonding substrates. Background Technology

[0002] For example, as a method for obtaining a substrate for use in liquid crystal panels and other bonding substrates, a method of dividing a mother substrate (bonding mother substrate) at a given position is widely used, wherein a portion formed by sealing a given sealing member and a sealing portion formed by a sealing member are regularly arranged, and two large-sized glass substrates are bonded together using the sealing member, thereby forming a mother substrate (bonding mother substrate).

[0003] In the process of manufacturing such bonding substrates, sometimes a process is performed in which the end (end material portion) of one of the two glass substrates constituting each bonding substrate is removed, exposing a portion of the other glass substrate opposite to the end material portion. In most cases, since a terminal portion for electrical connection is provided in the exposed portion, this process is also called terminal lead-out.

[0004] Previously, such terminal lead-out processing was performed as a step in the process of dividing the mother substrate into smaller pieces (for obtaining individual bonding substrates) (see, for example, Patent Document 1 and Patent Document 2).

[0005] Furthermore, methods for cutting the portion of a glass veneer surrounded by a closed curve using cutting wheels with different left and right cutting angles are also known (see, for example, Patent Document 3).

[0006] Prior art literature

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent Application Publication No. 2014-214053

[0009] Patent Document 2: Japanese Patent Application Publication No. 2014-214054

[0010] Patent Document 3: Japanese Patent Application Publication No. 7-223828 Summary of the Invention

[0011] The problem that the invention aims to solve

[0012] Conventional terminal lead-out processing, as disclosed in Patent Documents 1 and 2, is performed after a so-called cross-cutting of the two substrates constituting the mother substrate, which are cut along the longitudinal and transverse directions respectively.

[0013] However, recently, there has been a technical requirement to maintain the state of the mother substrate, that is, to expose the portions of the mother substrate that become the terminals of the respective bonding substrates without cross-cutting at least one substrate of the mother substrate.

[0014] On the other hand, Patent Document 3 only discloses a method for cutting the portion surrounded by a closed curve from the single board, and does not disclose or suggest any method for exposing the terminal portion of the bonding substrate.

[0015] The present invention was made in view of the above-mentioned problems, and its object is to provide a method for processing a bonding substrate in which the terminal portions of each bonding substrate are exposed while the mother substrate is in the state.

[0016] Methods for solving problems

[0017] To address the aforementioned issues, technical solution 1 provides a method for processing a laminated substrate formed by bonding a first substrate and a second substrate. The laminated substrate has a strip-shaped non-contact space between the first substrate and the second substrate, where the first substrate and the second substrate are not in contact. The processing method comprises: a removal target portion setting step, in which a removal target portion is set on a portion of the second substrate along the non-contact space, with a cross-section perpendicular to the extending direction of the non-contact space narrowing towards the non-contact space; a scribing step, in which a scribing line is formed on the surface of the second substrate not bonded to the first substrate along a line intersecting at least one of the boundary surfaces of a pair of boundary surfaces of the removal target portion, causing a crack to extend from the scribing line along the boundary surface; a breaking step, in which a breaking rod is pressed against the first substrate side of the laminated substrate after the scribing step and further pressed in, thereby causing the crack to extend along the boundary surface and separating the removal target portion from the second substrate at the boundary surface; and a removal step, in which the removal target portion separated by the breaking step is removed, exposing the portion in the first substrate that divides the non-contact space.

[0018] The invention of technical solution 2 is based on the processing method of bonding substrate described in technical solution 1, characterized in that, in the removal target part setting process, the removal target part is set as a cone shape; in the scribing process, the scribing line is formed along the intersection line with each of the pair of boundary surfaces, so that the crack extends from the scribing line along each of the pair of boundary surfaces; and in the crack breaking process, the crack extends along each of the pair of boundary surfaces.

[0019] The invention of technical solution 3 is based on the processing method of bonding substrate described in technical solution 1 or technical solution 2. The invention is characterized in that, in the scribing process, a scribing wheel with different inclination angles relative to the plane including the ridge line of the blade tip is pressed and rolled along the intersection line with the blade of the two blades having the smaller inclination angle relative to the plane located on the side of the object to be removed, thereby forming the scribing line.

[0020] The invention of technical solution 4 is based on the processing method of the bonding substrate described in technical solution 3, characterized in that the angle between each of the pair of boundary surfaces and the thickness direction of the bonding substrate is 3° to 30°, and when the smaller of the two blade surfaces' inclination angles relative to the plane is set as angle θ1 and the larger of the two blade surfaces is set as angle θ2, the angle θ1 is 45° to 75°, the angle θ2 is 55° to 80°, and the angle difference θ2-θ1 is 5° to 25°.

[0021] The invention of technical solution 5 is the processing method of bonding substrate described in technical solution 4, characterized in that the angle difference θ2-θ1 is 10°~20°.

[0022] The invention of technical solution 6 is a processing method for bonding substrate according to any one of technical solutions 1 to 5, characterized in that, in the breaking process, a retaining strip is pasted on the surface of the first substrate that is not bonded to the second substrate, so that the breaking rod abuts against the retaining strip.

[0023] The invention of technical solution 7 is a method for processing a bonding substrate according to any one of technical solutions 1 to 6, characterized in that, in the removal process, the part to be removed is removed from the bonding substrate by attaching the part to be removed to the adhesive member of the clamp having an adhesive member at the end.

[0024] The invention of technical solution 8 is a processing method for a bonding substrate as described in any one of technical solutions 1 to 7, characterized in that the first substrate and the second substrate are respectively made of different materials.

[0025] Invention Effects

[0026] According to the inventions of technical solutions 1 to 8, in a bonding (mother) substrate formed by bonding two substrates together, a strip-shaped non-contact space is provided between the two substrates. One substrate of the bonding mother substrate that divides the non-contact space is removed, thereby exposing the other substrate of the bonding substrate that similarly divides the non-contact space. Attached Figure Description

[0027] Figure 1 This is a schematic top view of the bonding of the mother substrate 1.

[0028] Figure 2 This is a partial schematic cross-sectional view of the bonding mother substrate 1.

[0029] Figure 3 This is a schematic top view showing the processing position of the bonding mother substrate 1.

[0030] Figure 4 This is a partial schematic cross-sectional view showing the processing position of the bonding mother substrate 1.

[0031] Figure 5 This is a diagram illustrating the process of engraving.

[0032] Figure 6 This is a diagram showing the bonding mother substrate 1 after the etching process.

[0033] Figure 7 This is a diagram illustrating the fracture treatment.

[0034] Figure 8 This is a diagram showing the bonding mother substrate 1 after the fracture treatment.

[0035] Figure 9 It is a diagram that represents the phased expansion picking process.

[0036] Figure 10 It is a diagram that represents the phased expansion picking process.

[0037] Figure 11 It is a diagram that represents the phased expansion picking process.

[0038] Figure 12 It is a diagram that represents the phased expansion picking process.

[0039] Figure 13 This is a diagram used to illustrate the effect of extended picking.

[0040] Figure 14 This is a diagram showing the bonding substrate 1 after all the removed object parts 9 have been removed.

[0041] -Explanation of Figure Markers-

[0042] 1. Laminating the mother substrate

[0043] 2 First brittle material substrate

[0044] 2f Non-contact area

[0045] 3 Second brittle material substrate

[0046] 4 enclosed areas

[0047] 5. Sealing section

[0048] 6. Sealing section

[0049] 8. Non-contact space

[0050] 9. Remove the object part

[0051] 9a, 9b (excluding the object part) boundary surfaces

[0052] 9f (excluding the object part) upper surface

[0053] 9s (excluding the object section) section

[0054] 100 engraving device

[0055] 102 Grating Wheels

[0056] 102a, 102b (cutting wheel) cutting edges

[0057] 102e (for engraving wheels) cutting tip

[0058] 102r (the edge of the engraving wheel tip)

[0059] 200 Fracture Device

[0060] 202 Fracture bar

[0061] 202e (fracture bar) blade tip

[0062] 300 expansion device

[0063] 302 Fixed components

[0064] 303 Pickup Fixture

[0065] 303e (lower end face of the pick-up fixture)

[0066] AT adhesive components

[0067] CR cracks

[0068] ET extension band

[0069] SL markings. Detailed Implementation

[0070] <Overview of bonding with the mother substrate>

[0071] Figure 1 This is a schematic top view of the bonding mother substrate 1, which is the object of processing in this embodiment. Figure 2 This is a partial schematic cross-sectional view of the bonding mother substrate 1.

[0072] The bonding substrate 1 generally has the following structure: in the sealing region 4 between the first brittle material substrate 2 and the second brittle material substrate 3, which are disposed face-to-face with each other, a sealing portion 6 made of a given sealing member (e.g., liquid crystal, resin) is used to seal the sealing portion 5 made of a given sealing member (e.g., liquid crystal, resin). In addition, electrodes 7 or the like may be provided in the sealing portion 5.

[0073] Examples of brittle materials used for the first brittle material substrate 2 include glass materials such as silicon, alkali-free glass, and quartz glass. Examples of brittle materials used for the second brittle material substrate 3 include glass materials such as alkali-free glass. The thickness of the first glass substrate 2 is, for example, about 0.1 mm to 1.0 mm, and the thickness of the second glass substrate 3 is about 0.1 mm to 1.0 mm. Furthermore, the planar dimensions of both (one side if it is rectangular, and the diameter if it is circular) are approximately 200 mm to 500 mm.

[0074] More specifically, such as Figure 1 As shown, the sealing portion 6 repeatedly sets the sealing portion 5, which is sealed around the sealing portion 5, in two mutually orthogonal directions (the first direction and the second direction) within the surface of the mating substrate 1, within a configurable range. Figure 1 In the accompanying figures, the first direction is set as the X-axis, the second direction as the Y-axis, and the vertical direction as the Z-axis, and the XYZ coordinates of the right-hand system are labeled.

[0075] Furthermore, in this embodiment, each sealing portion 5 and the sealing portion 6 that seals its surroundings are collectively referred to as a unit sealing region. Moreover, adjacent unit sealing regions (actually sealing portions 6) are continuous at least in a first direction, but in a second direction orthogonal to the first direction, adjacent unit sealing regions are separated by a given interval. In other words, adjacent unit sealing regions form a linear (strip-shaped) non-contact space 8 extending along the X-axis direction.

[0076] Furthermore, in the non-contact space 8, the first glass substrate 2 and the second glass substrate 3 are also separated in the Z-axis direction without passing through a unit sealing area. Hereinafter, the portion of the first glass substrate 2 exposed in the relevant non-contact space 8 will be specifically referred to as the non-contact region 2f.

[0077] In the bonding mother substrate 1 having the structure described above, each unit sealing region and a given range in the first brittle material substrate 2 and the second brittle material substrate 3 that at least sandwiches the unit sealing region constitute a structural unit of each bonding substrate. In other words, this structural unit exists repeatedly in two mutually orthogonal directions. Moreover, by dividing (monolithizing) the bonding mother substrate 1 so that these structural units are separated, a large number of bonding substrates can be obtained.

[0078] In other words, the bonding mother substrate 1 is a bonding substrate that is envisioned to be broken in subsequent processes. However, for ease of distinction, in this embodiment, the bonding substrate that is envisioned to be broken is referred to as the bonding mother substrate.

[0079] If the bonding substrate obtained by splitting the bonding mother substrate 1 is a liquid crystal substrate (the case where liquid crystal is sealed in the sealing part 5 as a sealing member), a terminal part for ensuring electrical connection between the liquid crystal substrate and the outside is usually provided in the non-contact area 2f.

[0080] <Processing Overview>

[0081] Figure 3 This is a schematic top view showing the processing position of the bonding mother substrate 1 in the processing method according to this embodiment. Figure 4 This is a partial schematic cross-sectional view of the bonding mother substrate 1, showing the relevant processing positions.

[0082] In the implementation method, it is roughly as follows: Figure 4 As shown, a process is performed to remove the removal target portion 9 from the second brittle material substrate 3, which is positioned opposite the non-contact region 2f of the first brittle material substrate 2 in the Z-axis direction. Figure 3 As shown, when viewed from above, the related removal target area 9 is a straight (strip-shaped) area extending along the X-axis direction.

[0083] Among them, such as Figure 4 As shown, the object to be removed 9 is configured such that the spacing between its pair of boundary surfaces 9a and 9b, which extend along the X-axis, narrows towards the non-contact space 8. In other words, the object to be removed 9 is set to be conical in the YZ section (trapezoidal in cross-sectional view). The angle (tilt angle) formed by the boundary surfaces 9a and 9b with the thickness direction (Z-axis direction) of the bonding substrate 1 is approximately 3° to 30°. For example, when the thickness of the second brittle material substrate 3 is approximately 0.5 mm to 0.7 mm, the difference in the end positions (also called the removal amount) of the boundary surfaces 9a and 9b on the upper and lower surfaces of the second brittle material substrate 3 becomes more than 30 μm.

[0084] The process for removing the object 9 from the bonding substrate 1 is generally performed by steps such as scribing, breaking, and picking. These steps will be described in turn below.

[0085] <Engraving>

[0086] Figure 5 This diagram illustrates the scribing process performed in this embodiment. The scribing process is performed using a scribing apparatus 100. Figure 6 This is a diagram showing the bonding mother substrate 1 after the etching process.

[0087] During the scribing process, firstly, the bonding substrate 1 is placed and fixed on the worktable 101 of the scribing apparatus 100. The bonding substrate 1 is placed and fixed on the worktable 101 in an orientation where the surface of the first brittle material substrate 2 contacts the worktable 101, and the second brittle material substrate 3 forms the upper surface. Furthermore, in... Figure 5 In subsequent diagrams, the enclosed region 4 is sometimes simplified for the purpose of simplifying the illustration.

[0088] In the scribing apparatus 100, a scribing process is performed in advance on the bonding substrate 1 to target the boundary surfaces 9a and 9b of the removal target portion 9 as defined along the X-axis.

[0089] More specifically, scribing lines SL are formed on the second brittle material substrate 3 by pressing and rolling the scribing wheel (blade wheel) 102 along the intersection lines 9a1 and 9b1 of the boundary surfaces 9a and 9b and the surface of the second brittle material substrate 3 (the surface not in contact with the first brittle material substrate 2).

[0090] The scribing wheel 102 is a disc-shaped component with a triangular-shaped cutting tip 102e at its outer peripheral end. The scribing wheel 102 is held in a cage (not shown) and rotates freely in a vertical position. Furthermore, when the cutting tip 102e is in contact with the intersection lines 9a1 and 9b1 respectively, the cage is moved, thereby causing the cutting tip 102e to roll and press along the intersection lines 9a1 and 9b1 to form the scribing line SL.

[0091] In this embodiment, the scribing wheel 102 is a scribing wheel with an asymmetrical (unequal-sided triangular) cross-sectional shape of the tip 102e. Specifically, the scribing wheel 102 is characterized by the fact that the two cutting surfaces 102a and 102b forming the ridge 102r of the tip 102e each form an angle with the plane including the ridge 102r, and that the values ​​of the respective inclination angles θ1 and θ2 of the cutting surfaces 102a and 102b are different (assumed to be θ1 < θ2).

[0092] If the scribing wheel 102, with an asymmetrical cross-sectional shape of the blade tip 102e, is pressed and rolled in this manner, the crack CR extends (penetrates) from the scribing line SL toward the interior of the second brittle material substrate 3. However, the crack CR does not extend vertically downward, but rather extends in a manner inclined toward the side with the smaller inclination angle of the scribing wheel 102's cutting edge. In this embodiment, utilizing this property, the cutting edge 102a with an inclination angle θ1 is positioned on the side of the object to be removed 9, and the cutting edge 102b with an inclination angle θ2 is positioned on the opposite side. In this configuration, the scribing wheel 102 is pressed and rolled along the X-axis direction, so that the crack CR extends along the boundary surfaces 9a and 9b of each object to be removed 9.

[0093] More specifically, since the directions of inclination of boundary surface 9a and boundary surface 9b are opposite, therefore in Figure 5 In the engraving process with boundary surface 9a as shown by arrow AR1 and the engraving process with boundary surface 9b as shown by arrow AR2, the horizontal posture of the engraving wheel 102 differs by 180°.

[0094] Furthermore, multiple removal targets 9 are typically provided on a bonding substrate 1. Therefore, if all boundary surfaces 9a and 9b are etched using a single scribing wheel 102, it is preferable from the viewpoint of scribing efficiency and stability to rotate the horizontal position of the scribing wheel 102 180° after all the scribing processes targeting one boundary surface (e.g., boundary surface 9a) of the removal target 9 are completed.

[0095] Alternatively, the marking device 100 may be configured with at least one set of two marking wheels 102 with a horizontal orientation difference of 180°, which simultaneously and in parallel mark the boundary surface 9a and mark the boundary surface 9b.

[0096] Figure 6 This shows the case where the bonding mother substrate 1 is completed after all the engraving processes targeting boundary surfaces 9a and 9b are finished.

[0097] The tilt angle θ1 of the scribing wheel 102 is preferably 45° to 75°, the tilt angle θ2 is preferably 55° to 80°, and the angle difference θ2-θ1 is preferably 5° to 25°. Furthermore, the angle difference θ2-θ1 is more preferably 10° to 20°. In addition, the larger the angle difference θ2-θ1, the easier it is to separate the target portion 9. However, if the angle difference θ2-θ1 is greater than 25°, there is a tendency for quality deterioration, such as notches, debris, and the extension of horizontal cracks, to easily occur at the end of the second brittle material substrate 3 that contacts the target portion 9 before separation. Therefore, this is not preferred.

[0098] In addition, the scribing load only needs to be around 6N to 35N, and the scribing speed only needs to be around 10mm / s to 300mm / s.

[0099] <Fracturing Treatment>

[0100] Figure 7 This diagram illustrates the fracture process performed in this embodiment. The fracture process is performed using a fracture device 200. Figure 8This is a diagram showing the bonding mother substrate 1 after the fracture treatment.

[0101] During the fracture process, firstly, an extension tape ET is attached to cover the entire exposed surface of the first brittle material substrate 2 (the opposite surface to the surface in contact with the sealing region 4) of the bonding mother substrate 1. More specifically, the extension tape ET is tensioned and disposed on a retaining ring (not shown in the figure), and the first brittle material substrate 2 is adhered and fixed to the adhesive surface of the extension tape ET exposed inside the ring. The extension tape ET is a method of attaching a retaining tape to reliably hold the bonding mother substrate 1 after the fracture process, and is designated as the object of extension during the extension pickup described later.

[0102] Furthermore, on the worktable 201 of the fracture device 200, which is at least partially composed of an elastomer, a bonding substrate 1 with a related extension tape ET is placed and fixedly attached. At this time, the bonding substrate 1 is positioned such that the second brittle material substrate 3 is the surface to be placed in contact with the worktable 201, and the first brittle material substrate 2 is the upper surface; in other words, it is placed and fixed on the worktable 201 with the attached extension tape ET in the uppermost position.

[0103] In the breaking device 200, a breaking process is generally performed, causing the crack CR formed from one side of the second brittle material substrate 3 along the boundary surfaces 9a and 9b of the removed object portion 9 to extend further into the interior, so that it penetrates to the other side that divides the non-contact space 8.

[0104] More specifically, the bonding substrate 1 is placed and fixed, and the breaking rod 202 is positioned so that the triangular-shaped blade tip 202e of the breaking rod 202, which is vertically below the crack CR, is positioned above the crack CR in a first direction extending along the crack CR. Based on this, as indicated by arrow AR3, the breaking rod 202 is lowered, and at its vertical position above the crack CR, it abuts against the bonding substrate 1 through the extension band ET, pressing in a given distance, and then immediately rises, retracting to its initial position.

[0105] By pressing in the crack-breaking rod 202, a force is applied from the elastic worktable 201 to the bonding substrate 1, widening both sides of the crack CR. As a result, the crack CR extends further along the boundary surfaces 9a and 9b, penetrating the second brittle material substrate 3. In other words, with the extension of the crack CR, the second brittle material substrate 3 is broken at the location where the boundary surfaces 9a and 9b are defined up to this point.

[0106] Furthermore, the relative position of the position where the fracture rod 202 abuts with the boundary surfaces 9a and 9b in the first direction can be appropriately adjusted according to the material and thickness of the first brittle material substrate 2 and the second brittle material substrate 3 constituting the bonding mother substrate 1, and the degree of extension of the crack CR during the scribing process.

[0107] The tip angle θ3 of the fracture rod 202 should be approximately 15° to 90°. Additionally, the indentation of the fracture rod 202 during fracture should be approximately 0.02 mm to 0.3 mm, and the descent speed should be approximately 5 mm / s to 100 mm / s.

[0108] By sequentially performing relevant fracture treatments on all cracks CR, such as... Figure 8 As shown, the entire object to be removed 9 contacts the second brittle material substrate 3 at the section 9s formed at the portion where the boundary surfaces 9a and 9b have been defined up to this point, and at the same time becomes a state of being separated from the second brittle material substrate 3.

[0109] <Pickup Processing>

[0110] As described above, in the bonding mother substrate 1 after the fracture treatment, all the removed portion 9 is separated from the second brittle material substrate 3 at the fracture surface 9s. Furthermore, as... Figure 4 As shown, apart from the object portion 9, which is originally separated from the non-contact space 8 of the sealing region 4 and is opposite to the non-contact region 2f of the first brittle material substrate 2, it does not come into contact with anything other than the second brittle material substrate 3.

[0111] Therefore, the removed portion 9 after the fracture treatment becomes a state in which it can be easily removed from the second brittle material substrate 3 by external force. In this embodiment, removing the removed portion 9 in the relevant state from the second brittle material substrate 3 is called a pick-up process.

[0112] In one embodiment, as a preferred method of the pickup process, the pickup process is performed by radially elongating the extension band ET. This pickup process is specifically referred to as extension pickup. The elongation of the extension band ET is performed to reduce the force acting between the cut surface 9s of the target portion 9 and the adjacent second brittle material substrate 3.

[0113] Extended pickup is performed using the extended device 300. Figures 9 to 12 This diagram illustrates the phased implementation of extended picking in this embodiment.

[0114] The expansion device 300 includes: a worktable 301 capable of horizontally supporting and fixing a bonding substrate 1 with an expansion tape ET attached to its upper surface, and which is vertically movable; and a fixing member 302 that fixes the outer peripheral end of the expansion tape ET when the bonding substrate 1 is fixed to the worktable 301 (more specifically, a retaining ring, not shown, is fixed to tension the expansion tape ET). The expansion device 300 can, for example, utilize apparatus used in an expansion process for separating a large number of chips obtained by monolithicizing a semiconductor element substrate using methods such as dicing. Furthermore, an expansion tape for the expansion process can also be used for the expansion tape ET attached at the time of the splitting process.

[0115] During the extended pickup process, the bonding mother substrate 1, after being fractured, remains in the state with the extended tape ET attached, and one side of the second brittle material substrate 3, which is attached to the target portion 9, is placed and fixed on the mounting stage 301 as the upper surface. At this time, the outer peripheral end of the extended tape ET is also fixed using the fixing member 302.

[0116] Next, as Figure 10 As indicated by arrow AR4, after the worktable 301 is raised a given distance, as indicated by arrow AR5, the pick-up jig 303 approaches the upper surface 9f of the object to be removed 9 from vertical above. The pick-up jig 303 is a jig formed by attaching a strip-shaped adhesive member AT to its flat lower end face 303e. Then, as... Figure 11 As shown, the adhesive member AT is brought into contact with the upper surface 9f of the object to be removed 9. The associated contact occurs in the first direction (in...). Figure 11 Within a suitable range (the entire range or a portion thereof) along the length direction of the object-to-be-removed portion 9 extending perpendicular to the paper surface, within the width of the object-to-be-removed portion 9 (in... Figure 10 The measurement is performed within the range of the Y-axis dimension.

[0117] If the pickup clamp 303 is raised vertically upwards in this state, then as Figure 12 As shown, the object removal part 9 is lifted as an integral part of the pick-up jig 303 by the adhesive force of the adhesive member AT attached to the object removal part 9. As a result, the object removal part 9 is removed from the second brittle material substrate 3, and the non-contact area 2f of the first brittle material substrate 2 is exposed.

[0118] More specifically, from the viewpoint of properly removing the target portion 9, the adhesive member AT is attached to the lower end face 303e of the pick-up jig 303 with a width slightly smaller than the width of the target portion 9. For example, if the width of the target portion 9 is 3.2 mm, then the width of the adhesive member AT can be approximately 3 mm. Moreover, the adhesive member AT contacts the upper surface 9f within the width of the target portion 9.

[0119] On the other hand, the length of the adhesive member AT, which is orthogonal to the width direction, is not particularly limited as long as it allows for the reliable and efficient removal of the object portion 9. For example, such as Figure 3 As shown, if the dimensions of each removal target portion 9 in the length direction of a bonding mother substrate 1 are different, then the dimension is sufficient to remove all removal target portions 9 effectively.

[0120] Furthermore, the pickup fixture 303 does not need to be part of the extension device 300; it can also be a separate component. Therefore, mechanical operation is not required. Figures 10 to 12 The series of removal actions shown can also be performed by an operator holding the pick-up clamp 303 and performing the related removal actions. However, from the viewpoint of reliably removing the object to be removed 9, it is necessary to bring the pick-up clamp 303 perpendicularly close to the horizontally mounted and fixed bonding substrate 1 so that the adhesive member AT is attached to the object to be removed 9, and after the attachment is performed, the pick-up clamp 303 is raised vertically. During these operations, when the pick-up clamp 303 is tilted, the second brittle material substrate 3 may develop gaps or other defects during the removal of the object to be removed 9, which is not preferable.

[0121] Figure 13 This diagram illustrates the effect of using the extension device 300 for extended pickup.

[0122] As described above, since the object to be removed 9 only contacts the second brittle material substrate 3 at the split surface 9s, in principle, the object to be removed 9 can be removed using the pick-up jig 303 even without using the extension device 300 to extend the extension band ET.

[0123] However, assuming that the bonding mother substrate 1 after the fracture treatment is placed only on a flat surface without elongating the extension band ET, due to the structural differences in the in-plane direction between the first brittle material substrate 2, which is the same as a whole, and the second brittle material substrate 3, which is periodically present with the removed target portion 9 separated from the periphery, the bonding mother substrate 1, as Figure 13As shown in (a), curve La becomes a downwardly convex warped state, and stress Fa acts on the removal target portion 9 from the second brittle material substrate 3 sandwiched therein in the second direction. Furthermore, when the first brittle material substrate 2 and the second brittle material substrate 3 are made of different materials, the following situation occurs: due to the difference in the coefficients of linear expansion between the first brittle material substrate 2 and the second brittle material substrate 3, the bonding mother substrate 1 becomes as... Figure 13 As shown by curve La in (a), the object is warped downwards, and stress Fa acts on the object to be removed from the second brittle material substrate 3 sandwiched in the second direction.

[0124] In relevant cases, in order to remove the object to be removed 9 by picking up the jig 303, it is necessary to overcome the friction caused by the stress Fa.

[0125] In contrast, when the extension device 300 is used to extend the extension strip ET as described above, the bonding mother substrate 1 is as follows: Figure 13 As shown in (b), curve Lb becomes an upwardly convex warped state. Therefore, in the relevant case, the stress Fb acting on the object to be removed 9 from the second brittle material substrate 3 sandwiched therewith in the second direction is greater than... Figure 13 The stress Fa is small in the case shown in (a). Therefore, when performing the extended pick-up described above, the removal of the object to be removed by the pick-up fixture 303 can be performed more easily and reliably.

[0126] Figure 14 This diagram shows the bonding mother substrate 1 after all the removed target portions 9 have been removed. This bonding mother substrate 1 is supplied to a given subsequent process. Furthermore, in... Figure 14 The image shows the situation after the extension band ET has been stripped, but depending on the subsequent process, it could also be the case that the extension band ET remains unchanged after being added.

[0127] By obtaining Figure 14 The bonding mother substrate 1 shown can be used to easily perform a given process targeting the non-contact area 2f of each structural unit of each bonding substrate. For example, if the bonding mother substrate 1 is a mother substrate for a liquid crystal substrate, it is not necessary to obtain each liquid crystal substrate by monolithization, and to perform electrical inspections on the terminal portions of each liquid crystal substrate that are exposed in the non-contact area 2f by removing the removal target section 9.

[0128] As explained above, according to this embodiment, the portion that divides the non-contact space between adjacent unit sealing areas can be appropriately removed from one of the brittle material substrates of the bonding mother substrate, thereby exposing the non-contact area of ​​the other brittle material substrate. The bonding mother substrate has a unit sealing area repeatedly provided in the sealing area between two brittle material substrates arranged face-to-face with each other. The unit sealing area is formed by sealing a sealing portion composed of a given sealing member to a sealing portion composed of a given sealing member.

[0129] Furthermore, in the above embodiment, the scribing process is performed with both boundary surfaces 9a and 9b of the bonding substrate 1 inclined. However, it is sufficient that at least one boundary surface is inclined, and the other boundary surface may not be inclined. In this case, regarding the other boundary surface, it is preferable to perform the scribing process in a manner that extends the crack CR to the other side of the pre-defined non-contact space 8. In addition, in the above embodiment, the scribing process is performed on both boundary surfaces 9a and 9b of the bonding substrate 1. However, it is sufficient that only at least one boundary surface is processed by the scribing process. Regarding the other boundary surface, it may also be divided by slicing or other methods.

[0130] Furthermore, during the scribing process, scribing lines that intersect with the boundary surfaces 9a and 9b of the target portion 9 can be further formed on the bonding substrate 1.

[0131] In addition, the pickup clamp 303 can also be a clamp with an attached adsorption component instead of a strip-shaped adhesive component AT.

[0132] Furthermore, in the above embodiments, the bonding substrate 1, which is the object of processing, can also be understood to have the following structure: the first brittle material substrate 2 and the second brittle material substrate 3 pass through a certain direction in the plane ( Figure 1 In the case of sealing portions 6, which are periodically and discretely arranged unit sealing areas in the second direction (i.e., the Y-axis direction), the non-contact space 8 is understood as a linear space periodically and discretely arranged in a certain direction within the surface of the mating substrate 1.

[0133] Therefore, the processing method of the above embodiment can also be as follows: in the strip-shaped non-contact space between the two substrates in the bonding (mother) substrate formed by bonding two substrates, one substrate of the bonding mother substrate that divides the non-contact space is removed, so that the other substrate of the bonding substrate that divides the non-contact space in the same way can be exposed.

Claims

1. A method for processing a bonding substrate, comprising bonding a first substrate and a second substrate together to form a bonding substrate, characterized in that, The bonding substrate has a strip-shaped non-contact space between the first substrate and the second substrate, where the first substrate and the second substrate are not in contact. The method for processing the bonding substrate includes: In the object removal setting process, an object removal portion is set on the portion of the second substrate along the non-contact space, with a cross section perpendicular to the extending direction of the non-contact space that becomes narrower towards the non-contact space. In the scribing process, a scribing line is formed on the surface of the second substrate that is not attached to the first substrate along the intersection line with at least one of the boundary surfaces of a pair of boundary surfaces of the object to be removed, so that a crack extends from the scribing line along the boundary surface. In the cleaving process, the cleaving rod is pressed against the first substrate side of the bonding substrate that has undergone the scribing process and further pressed in, thereby causing the crack to extend along the boundary surface and causing the object to be removed to break off from the second substrate at the boundary surface. as well as The removal process removes the portion to be removed that has been broken up by the cracking process, exposing the portion in the first substrate that divides the non-contact space.

2. The processing method for bonding substrate according to claim 1, characterized in that, In the object removal setting process, the object removal section is set to a cone shape. In the scribing process, the scribing lines are formed along the lines intersecting the respective pair of boundary surfaces, causing cracks to extend from the scribing lines along the respective pair of boundary surfaces. In the fracture process, the crack extends along each of the pair of boundary surfaces.

3. The method for processing a bonding substrate according to claim 1 or claim 2, characterized in that, In the engraving process, a graving wheel with different inclination angles relative to the plane including the ridge line of the blade tip is pressed and rolled along the intersection line with the blade with the smaller inclination angle relative to the plane on the side of the part to be removed, thereby forming the engraving line.

4. The processing method for bonding substrate according to claim 3, characterized in that, The angle between each of the pair of boundary surfaces and the thickness direction of the bonding substrate is 3° to 30°. When the smaller of the two cutting edges' inclination angles relative to the plane is designated as angle θ1 and the larger one as angle θ2, The angle θ1 is 45° to 75°. The angle θ2 is 55° to 80°. The angular difference θ2-θ1 is 5° to 25°.

5. The method for processing a bonding substrate according to claim 4, characterized in that, The angle difference θ2-θ1 is 10° to 20°.

6. The method for processing a bonding substrate according to claim 1 or claim 2, characterized in that, In the fracture process, a retaining strip is attached to the side of the first substrate that is not attached to the second substrate, so that the fracture rod abuts against the retaining strip.

7. The method for processing a bonding substrate according to claim 1 or claim 2, characterized in that, The method for processing the bonding substrate includes: In the pasting process, no later than the start of the removal process, an extension tape is pasted onto the side of the first substrate that is not attached to the second substrate. In the removal process, the target portion is removed from the bonding substrate in a state where the extension strip is radially elongated toward the bonding substrate.

8. The method for processing a bonding substrate according to claim 1 or claim 2, characterized in that, In the removal process, the object to be removed is removed from the bonding substrate by attaching the object to the adhesive member of the clamp having an adhesive member at its end.

9. The method for processing a bonding substrate according to claim 8, characterized in that, The width of the adhesive member is smaller than the width of the removed object portion.

10. The method for processing a bonding substrate according to claim 1 or claim 2, characterized in that, The first substrate and the second substrate are made of different materials.

Images