Display panel, manufacturing method and display device

Abstract

The present invention relates to a display panel, a preparation method and a display device, wherein the display panel includes a TFT substrate, a light-emitting layer, a cathode layer, a conductive layer and an encapsulation layer, wherein the light-emitting layer is arranged on the TFT substrate; the cathode layer is arranged on the light-emitting layer; the conductive layer is arranged on the cathode layer; the encapsulation layer is arranged on the conductive layer; wherein the light-emitting layer is divided into a pixel area and a non-pixel area; the conductive layer includes a conductive structure, the conductive structure covers the non-pixel area, and the conductive structure is electrically connected to the cathode layer. Thus, the cathode surface resistance of the display panel can be significantly reduced, and the display unevenness effect caused by the voltage drop can be improved. The present application forms a conductive layer with a conductive structure above the cathode layer of the display panel, and the conductive structure can cover the non-pixel area, thereby reducing the cathode resistance of the display panel and improving the display uniformity without affecting the display effect. The display panel of the present application has a simple structure and has a significant effect of improving the cathode voltage drop.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a display panel, a preparation method and a display device. Background Art

[0002] For top-emitting large-size AMOLED display panels, in order to ensure light extraction efficiency, the cathode should be made into a film layer with high transmittance as much as possible, and the cathode thickness should be relatively thin. However, a too thin cathode will bring a large cathode resistance, resulting in a voltage drop on the entire surface of the evaporated cathode, affecting the display uniformity. Therefore, how to reduce the cathode surface resistance is a difficult problem currently faced by top-emitting AMOLED panels.

[0003] In the prior art, although the cathode voltage drop (IR Drop) can be significantly improved by using an auxiliary electrode, the existing method of improving the cathode voltage drop is complex and has a high process difficulty, and is prone to poor contact between the substrate wiring and the cathode, resulting in poor product quality. Summary of the invention

[0004] Based on this, it is necessary to provide a display panel, preparation method and display device to address the problem that the existing methods for improving cathode voltage drop are complex, the process is difficult, and poor contact between substrate wiring and cathode is prone to occur.

[0005] In a first aspect, the present application provides a display panel, comprising:

[0006] TFT substrate;

[0007] A light-emitting layer, wherein the light-emitting layer is arranged on the TFT substrate;

[0008] A cathode layer, wherein the cathode layer is disposed on the light-emitting layer;

[0009] A conductive layer, the conductive layer is disposed on the cathode layer;

[0010] A packaging layer, the packaging layer is arranged on the conductive layer;

[0011] The light-emitting layer is divided into a pixel area and a non-pixel area; the conductive layer includes a conductive structure, the conductive structure covers the non-pixel area, and the conductive structure is electrically connected to the cathode layer.

[0012] Optionally, the conductive structure is a grid structure.

[0013] Optionally, the conductive structure is prepared from a conductive solution.

[0014] Optionally, the TFT substrate further includes a substrate plate and a TFT circuit layer; the TFT circuit layer is arranged on the substrate plate.

[0015] In a second aspect, the present application provides a method for preparing a display panel, comprising:

[0016] Providing a TFT substrate;

[0017] A light-emitting layer is prepared on a TFT substrate; the light-emitting layer is divided into a pixel area and a non-pixel area;

[0018] preparing a cathode layer on the light-emitting layer;

[0019] preparing a conductive layer on the cathode layer;

[0020] preparing a packaging layer on the conductive layer;

[0021] The conductive layer includes a conductive structure, which covers the non-pixel area and electrically connects the conductive structure to the cathode layer.

[0022] Optionally, a conductive layer is prepared on the cathode layer, comprising:

[0023] coating a photoresist on the cathode layer;

[0024] Photolithography is performed on the photoresist based on a preset pattern to form a photoresist channel; the preset pattern is a photoresist region pattern above the cathode layer corresponding to the pixel region;

[0025] Applying a conductive solution on the cathode layer and making the conductive solution flow levelly on the photoresist channel to form a first semi-finished product;

[0026] The conductive solution in the first semi-finished product is dried to form a conductive structure.

[0027] Optionally, the photoresist channel is a grid-shaped channel, and the conductive structure is a grid-shaped structure.

[0028] Optionally, the steps of preparing the TFT substrate include:

[0029] providing a substrate plate;

[0030] A TFT circuit layer is prepared on a substrate plate to form a TFT substrate.

[0031] In a third aspect, the present application provides a display device, comprising any one of the display panels described above.

[0032] Optionally, the display panel is an AMOLED panel.

[0033] One of the above technical solutions has the following advantages and beneficial effects:

[0034] In the display panel provided by each embodiment of the present application, the light-emitting layer is arranged on the TFT substrate; the cathode layer is arranged on the light-emitting layer; the conductive layer is arranged on the cathode layer; the encapsulation layer is arranged on the conductive layer; the light-emitting layer is divided into a pixel area and a non-pixel area; the conductive layer includes a conductive structure, the conductive structure covers the non-pixel area, and the conductive structure is electrically connected to the cathode layer, thereby significantly reducing the cathode surface resistance of the display panel and improving the display unevenness effect caused by the voltage drop (IR Drop). The present application forms a conductive layer with a conductive structure above the cathode layer of the display panel, and the conductive structure can cover the non-pixel area, thereby reducing the cathode resistance of the display panel and improving the display uniformity without affecting the display effect. The display panel of the present application has a simple structure and has a significant effect of improving the cathode voltage drop. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above and other purposes, features and advantages of the present application will become clearer through a more specific description of the preferred embodiments of the present application shown in the accompanying drawings. The same reference numerals indicate the same parts in all the accompanying drawings, and the drawings are not deliberately scaled to the actual size, and the focus is on illustrating the subject matter of the present application.

[0036] Figure 1 It is a schematic diagram of the structure of the display panel in the embodiment of the present application.

[0037] Figure 2 It is a schematic diagram of the structure of the display panel in the embodiment of the present application.

[0038] Figure 3 Schematic diagram of the process of manufacturing a display panel in an embodiment of the present application.

[0039] Figure 4 Schematic diagram of the process of preparing the conductive layer in the embodiment of the present application.

[0040] Description of reference numerals:

[0041] 100, TFT substrate; 200, light-emitting layer; 300, cathode layer; 400, conductive layer; 410, conductive structure; 500, encapsulation layer. DETAILED DESCRIPTION

[0042] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0043] It should be noted that when an element is considered to be "connected" to another element, it may be directly connected to the other element and combined with it as a whole, or there may be an intermediate element at the same time. The terms "disposed", "one end", "the other end" and similar expressions used herein are for illustrative purposes only.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0045] In existing display panels, in order to reduce the voltage drop on the panel cathode, a common method is to connect the substrate wiring in the plane to the cathode to form an auxiliary electrode design. This design can significantly improve the cathode voltage drop (IRDrop), but this design is more complicated and the process is more difficult, and there are often some negative effects caused by poor contact between the substrate wiring and the cathode.

[0046] In order to solve the problem that the existing method of improving the cathode voltage drop is complicated, the process is difficult, and the substrate wiring is prone to poor contact with the cathode, in one embodiment, Figure 1 and 2 As shown, a display panel is provided, including a TFT (Thin Film Transistor) substrate 100 , a light emitting layer 200 , a cathode layer 300 , a conductive layer 400 and an encapsulation layer 500 .

[0047] The light-emitting layer 200 is arranged on the TFT substrate 100; the cathode layer 300 is arranged on the light-emitting layer 200; the conductive layer 400 is arranged on the cathode layer 300; the encapsulation layer 500 is arranged on the conductive layer 400; wherein the light-emitting layer 200 is divided into a pixel area and a non-pixel area; the conductive layer 400 includes a conductive structure 410, the conductive structure 410 covers the non-pixel area, and the conductive structure 410 is electrically connected to the cathode layer 300.

[0048] Among them, the TFT substrate 100 refers to a substrate with a TFT array, which is composed of a capacitor element and a plurality of TFT devices. The TFT array is used to drive the on and off of the light-emitting device on the light-emitting layer 200. The light-emitting layer 200 is arranged on the TFT substrate 100, and the light-emitting layer 200 can be electrically connected to the circuit on the TFT substrate 100. The light-emitting layer 200 may include a light-emitting device (such as an OLED device). The light-emitting device on the light-emitting layer 200 can emit light based on the drive of the TFT substrate 100. It should be noted that the light-emitting layer 200 is closely attached to the TFT substrate 100. The light-emitting layer 200 can be divided into a pixel area and a non-pixel area, and the pixel area may include several groups of sub-pixel groups, and the sub-pixel group includes RGB (red, green, and blue) sub-pixels. One sub-pixel corresponds to one OLED device. The sub-pixel groups in the pixel area are arranged in an array. In one example, the sub-pixel groups are arranged at intervals. The interval area between the sub-pixel groups and the peripheral area of ​​the pixel area form a non-pixel area.

[0049] A cathode layer 300 is arranged on the light-emitting layer 200. The material of the cathode layer 300 can be, but is not limited to, metal materials such as aluminum, copper, and silver, and can also be transparent conductive materials such as indium tin oxide (ITO) and indium zinc oxide (IZO), but is not limited to these materials. The cathode layer 300 can be a single-layer film structure or a multi-layer film stacked structure. Specifically, it can be flexibly arranged according to the needs of actual product design.

[0050] A conductive layer 400 is disposed on the cathode layer 300, wherein the conductive layer 400 includes a conductive structure 410. The conductive structure 410 is located above the cathode layer 300 corresponding to the non-pixel area, the conductive structure 410 covers the non-pixel area, and the conductive structure 410 is electrically connected to the cathode layer 300. It should be noted that the conductive structure 410 is only disposed above the cathode layer 300 corresponding to the non-pixel area, and is not disposed above the cathode layer 300 corresponding to the pixel area, thereby forming a conductive layer 400 above the cathode layer 300, so as to effectively reduce the cathode surface resistance without affecting the light emission of the pixel area, and improve the uneven display effect caused by IR Drop.

[0051] The encapsulation layer 500 may be disposed on the conductive layer 400, and the encapsulation layer 500 may cover the cathode layer 300 and the conductive layer 400, thereby protecting the cathode layer 300 and the conductive layer 400 from external moisture and oxygen. It should be noted that the encapsulation layer 500 is closely attached to the conductive layer 400. The material of the encapsulation layer 500 includes, for example, silicon oxide, silicon nitride, silicon oxynitride, oxide formed by tetraethyl silicate TEOS, phosphosilicate glass PSG, borophosphosilicate glass BPSG, low-K dielectric materials with a dielectric constant K lower than 3.9, organic insulating materials such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc., other suitable dielectric materials or combinations thereof. Exemplarily, low-K dielectric materials include fluorosilicate glass FSG, carbon-doped silicon oxide, polyimide, etc. and combinations thereof. Providing the encapsulation layer 500 avoids interference of the external environment with the operation of the OLED device, which is beneficial to improving the stability of the operation of the OLED device.

[0052] In the above embodiment, the light-emitting layer 200 is arranged on the TFT substrate 100; the cathode layer 300 is arranged on the light-emitting layer 200; the conductive layer 400 is arranged on the cathode layer 300; the encapsulation layer 500 is arranged on the conductive layer 400; the light-emitting layer 200 is divided into a pixel area and a non-pixel area; the conductive layer 400 includes a conductive structure 410, the conductive structure 410 covers the non-pixel area, and the conductive structure 410 is electrically connected to the cathode layer 300, thereby significantly reducing the cathode surface resistance of the display panel and improving the display unevenness effect caused by the voltage drop (IRDrop). By forming a conductive layer 400 having a conductive structure 410 above the cathode layer 300 of the display panel, and the conductive structure 410 can cover the non-pixel area, thereby reducing the cathode resistance of the display panel and improving the display uniformity without affecting the display effect, the display panel of the present application has a simple structure and a significant effect of improving the cathode voltage drop.

[0053] In one example, if Figure 2 As shown, the sub-pixel groups in the pixel area based on the light-emitting layer 200 are arranged in a regular array, and the sub-pixel groups are spaced apart, thereby forming non-pixel areas between the sub-pixel groups and around the sub-pixel groups, so that the non-pixel areas are in a grid shape, and the conductive structure 410 is arranged above the cathode layer 300 corresponding to the non-pixel area, so that the conductive structure 410 is in a grid structure.

[0054] The conductive structure 410 is used to cover the cathode layer 300 corresponding to the non-pixel area, and the thickness of the cathode layer 300 is increased to reduce the cathode resistance. In order to ensure that the cathode layer 300 has a high transmittance, the conductive structure 410 only covers the cathode layer 300 corresponding to the non-pixel area, so that the light transmission effect of the cathode above the pixel area will not be reduced. In addition, by setting the grid-shaped conductive structure 410, there is no need to design an auxiliary cathode structure, and no fine mask is required, which is suitable for large-size AMOLED processes.

[0055] In one example, the conductive structure 410 is prepared by a conductive solution. For example, the specific preparation process of the conductive structure 410 is: coating a photoresist on the cathode layer 300, and then photolithography a pattern on the cathode layer 300 corresponding to the non-pixel area to form a mesh channel; then coating the conductive solution on the cathode layer 300, and filling the mesh channel with the conductive solution; drying the conductive solution on the mesh channel to form a film, forming a mesh-shaped conductive structure 410, and then peeling off the photoresist to leave only the conductive layer 400 with the conductive structure 410. The mesh-shaped metal electrode can be realized without using a fine mask process, which is suitable for the production process of large-size AMOLED panels.

[0056] In one example, the TFT substrate 100 further includes a substrate plate and a TFT circuit layer; the TFT circuit layer is disposed on the substrate plate.

[0057] The substrate plate is a base prepared for production and used to support the raw materials. The material of the substrate plate can be either a hard material like glass or a flexible material like PET. The material can be flexibly selected according to the actual production needs. The circuit layer can be arranged on the substrate plate. The TFT circuit layer may include a TFT driving circuit and a signal line, etc.; the TFT circuit layer may also include an insulating component. The TFT driving circuit on the TFT circuit layer can be used to drive the light-emitting device on the light-emitting layer 200 to work. It should be noted that the circuit layer is closely attached to the substrate plate.

[0058] Exemplarily, a buffer layer is provided between the substrate plate and the TFT circuit layer, and the buffer layer can be used to protect the overall structure of the TFT circuit layer and the display panel. The TFT circuit layer includes a first gate insulating layer provided on the buffer layer, a second gate insulating layer provided on the first gate insulating layer, an interlayer dielectric layer provided on the second gate insulating layer, and a planarization layer provided on the interlayer dielectric layer. The first gate insulating layer is provided on the buffer layer, and the first gate insulating layer can be used to insulate the active unit included in the protection circuit layer. The second gate insulating sublayer is provided on the first gate insulating layer, and the second gate insulating layer can be used to insulate the first gate unit included in the protection circuit layer. The interlayer dielectric layer is provided on the second gate insulating layer, and the interlayer dielectric layer can be used to cover the first gate unit, the second gate unit and the source-drain unit, and protect the first gate unit and the second gate unit. The planarization layer is provided on the interlayer dielectric layer, and the planarization layer can be used to insulate and protect the source-drain unit, and planarize the surface of the source-drain unit.

[0059] In one example, the light-emitting layer 200 is covered with a whole cathode to form a cathode layer 300. Based on the principle of covering the non-pixel area, a pattern is photoetched on the cathode layer 300 to form a mesh channel. Then a conductive solution is applied to the cathode layer 300 so that the conductive solution fills the mesh channel. The conductive solution is dried to form a film to form a conductive structure 410, which can significantly reduce the cathode surface resistance of the display panel and improve the display unevenness caused by IRDrop. By covering the cathode corresponding to the non-pixel area of ​​the display panel with a conductive solution, a mesh-interconnected conductive layer 400 is formed on the original cathode. This conductive layer 400 can effectively reduce the cathode surface resistance and improve IR Drop. In addition, the grid-like conductive layer 400 can be realized without the use of a finemask process, which is suitable for the production process of large-size AMOLED panels.

[0060] In one example, if Figure 3 As shown, the present application provides a method for preparing a display panel, comprising:

[0061] Step S310, providing a TFT substrate.

[0062] For example, the TFT substrate can be obtained by pre-preparation, for example, a substrate plate can be formed by deposition, and then a TFT circuit layer can be formed on the substrate plate by a low temperature polysilicon process to obtain the TFT substrate.

[0063] Step S320, preparing a light-emitting layer on the TFT substrate; the light-emitting layer is divided into a pixel area and a non-pixel area.

[0064] The light-emitting layer is formed by deposition on the TFT substrate through an evaporation process. The light-emitting layer is divided into a pixel area and a non-pixel area, wherein the pixel area may include several groups of sub-pixel groups, and the sub-pixel group includes RGB (red, green, and blue) sub-pixels. One sub-pixel corresponds to one OLED device. The sub-pixel groups in the pixel area are arranged in an array. In one example, the sub-pixel groups are spaced apart from each other. The spacing area between the sub-pixel groups and the peripheral area of ​​the pixel area form a non-pixel area.

[0065] Step S330, preparing a cathode layer on the light-emitting layer.

[0066] A cathode layer may be prepared on the light-emitting layer by a vacuum thermal evaporation process. The material of the cathode layer may be, but is not limited to, metal materials such as aluminum, copper, and silver, and may also be transparent conductive materials such as indium tin oxide (ITO) and indium zinc oxide (IZO), but is not limited to these materials. The cathode layer may be a single-layer film structure or a multi-layer film stacked structure. Specifically, it may be flexibly arranged according to the needs of actual product design.

[0067] Step S340, preparing a conductive layer on the cathode layer; wherein the conductive layer includes a conductive structure, the conductive structure covers the non-pixel area, and the conductive structure is electrically connected to the cathode layer.

[0068] Based on the principle of covering the non-pixel area, a conductive structure is coated on the cathode layer at a position corresponding to the non-pixel area, so that the conductive structure covers the non-pixel area, the conductive structure covers the non-pixel area, and the conductive structure is electrically connected to the cathode layer. It should be noted that the conductive structure is only arranged above the cathode layer corresponding to the non-pixel area, and is not arranged above the cathode layer corresponding to the pixel area, and then a conductive layer is formed above the cathode layer, so that the cathode surface resistance can be effectively reduced without affecting the light emission of the pixel area, and the display unevenness effect caused by IR Drop can be improved.

[0069] Step S350, preparing a packaging layer on the conductive layer.

[0070] A deposition process can be used to prepare an encapsulation layer above the conductive layer, and the encapsulation layer can cover the cathode layer and the conductive layer, thereby protecting the cathode layer and the conductive layer from external moisture and oxygen. It should be noted that the encapsulation layer is closely attached to the conductive layer. The materials of the encapsulation layer include, for example, silicon oxide, silicon nitride, silicon oxynitride, oxides formed by tetraethyl silicate TEOS, phosphosilicate glass PSG, borophosphosilicate glass BPSG, low-K dielectric materials with a dielectric constant K lower than 3.9, organic insulating materials such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc., other suitable dielectric materials or combinations thereof. Exemplarily, low-K dielectric materials include fluorosilicate glass FSG, carbon-doped silicon oxide, polyimide, etc. and combinations thereof. Providing an encapsulation layer avoids interference with the operation of the OLED device by the external environment, which is beneficial to improving the stability of the operation of the OLED device.

[0071] In the above embodiment, a light-emitting layer is prepared on a TFT substrate; the light-emitting layer is divided into a pixel area and a non-pixel area; a cathode layer is prepared on the light-emitting layer; a conductive layer is prepared on the cathode layer; wherein the conductive layer includes a conductive structure, the conductive structure covers the non-pixel area, and the conductive structure is electrically connected to the cathode layer; and a packaging layer is prepared on the conductive layer, thereby significantly reducing the cathode surface resistance of the display panel and improving the display unevenness effect caused by the voltage drop (IR Drop). By forming a conductive layer with a conductive structure above the cathode layer of the display panel, and the conductive structure can cover the non-pixel area, the cathode resistance of the display panel can be reduced without affecting the display effect, and the display uniformity can be improved. The display panel preparation process of the present application is simple, and a grid-shaped conductive layer can be realized without using a fine mask process, which is suitable for the production process of large-size AMOLED panels.

[0072] In one example, if Figure 4 As shown, a conductive layer is prepared on the cathode layer, comprising:

[0073] Step S410, coating a photoresist on the cathode layer.

[0074] Among them, photoresist, also known as photoresist, is a photosensitive material used in many industrial processes. For example, photoresist is coated on the cathode layer, and then a coating layer with a pattern is engraved on the cathode layer through a photolithography process. Exemplarily, the photoresist can be a positive photoresist, which is a type of photoresist, and the part that is exposed to light will dissolve in the photoresist developer, while the part that is not exposed to light will not dissolve in the photoresist developer. The photoresist can also be a negative photoresist, which is a type of photoresist, and the part that is exposed to light will not dissolve in the photoresist developer, while the part that is not exposed to light will dissolve in the photoresist developer.

[0075] Step S420, photolithography is performed on the photoresist based on a preset pattern to form a photoresist channel; the preset pattern is a photoresist region pattern above the cathode layer corresponding to the pixel region.

[0076] Among them, the preset pattern is the photoresist area pattern above the cathode layer of the corresponding pixel area. By adopting the photolithography process, the photoresist above the corresponding non-pixel area is removed, and the photoresist above the corresponding pixel area is retained, and then the photoresist area pattern above the cathode layer of the corresponding pixel area is formed on the cathode layer, and the area where the photoresist is removed forms a photoresist channel.

[0077] In step S430 , a conductive solution is coated on the cathode layer, and the conductive solution is made to flow levelly on the photoresist channel to form a first semi-finished product.

[0078] The conductive solution refers to a liquid with conductive properties, and the conductive solution solidifies to form a conductive solid. The conductive solution is coated on the cathode layer, and the conductive solution flows into the photoresist channel, and the photoresist channel is filled with the conductive solution, so that the conductive solution flows level with the photoresist channel, thereby forming a first semi-finished product.

[0079] Step S440, drying the conductive solution in the first semi-finished product to form a conductive structure.

[0080] The conductive solution in the first semi-finished product is dried and film-formed to solidify the conductive solution, thereby obtaining a conductive structure.

[0081] Exemplarily, a mesh channel is formed by coating a photoresist on the cathode layer, and then photolithography is performed on the cathode layer corresponding to the non-pixel area to form a mesh channel; a conductive solution is then coated on the cathode layer, and the mesh channel is filled with the conductive solution; the conductive solution on the mesh channel is dried to form a film to form a mesh-like conductive structure, and then the photoresist is stripped to leave only the conductive layer with the conductive structure. By using photolithography and solution film-forming processes to form a mesh-like conductive layer formed of a conductive solution on the cathode layer of the display panel, the panel cathode resistance is reduced and the display uniformity is improved. In addition, the mesh-like metal electrode can be realized without the use of a fine mask process, which is suitable for the production process of large-size AMOLED panels.

[0082] In one example, the photoresist channel is a grid-shaped channel, and the conductive structure is a grid-shaped structure.

[0083] The sub-pixel groups in the pixel area based on the light-emitting layer are arranged in an array in a regular manner, and the sub-pixel groups are arranged at intervals, so that non-pixel areas are formed between the sub-pixel groups and outside the sub-pixel groups, so that the non-pixel areas are grid-shaped. After the photoresist undergoes a photolithography process, a grid-shaped photoresist channel is formed above the corresponding non-pixel area. The conductive solution is dried to form a film on the photoresist channel to form a solidified conductive structure, and then the conductive structure is a grid-shaped structure. The conductive structure is used to cover the cathode layer corresponding to the non-pixel area, and the cathode layer thickness is increased to reduce the cathode resistance. In order to ensure that the cathode layer has a high transmittance, the conductive structure only covers the cathode layer corresponding to the non-pixel area, so it will not reduce the light transmission effect of the cathode above the pixel area. In addition, by setting a grid-shaped conductive structure, there is no need to design an auxiliary cathode structure, and no fine mask is required, which is suitable for large-size AMOLED processes.

[0084] In one example, the steps of preparing the TFT substrate include:

[0085] A substrate plate is provided; a TFT circuit layer is prepared on the substrate plate to form a TFT substrate.

[0086] The substrate plate may be a glass substrate plate. A TFT circuit layer may be prepared on the substrate plate by a low-temperature polysilicon process to form a TFT substrate.

[0087] For example, the TFT circuit layer may include a first gate insulating layer, a second gate insulating layer, an interlayer dielectric layer, and a planarization layer. A first gate insulating layer is prepared on a substrate, a second gate insulating layer is prepared on the first gate insulating layer, an interlayer dielectric layer is prepared on the second gate insulating layer, and a planarization layer is prepared on the interlayer dielectric layer. The first gate insulating layer, the second gate insulating layer, the interlayer dielectric layer, and the planarization layer are combined to form a circuit layer. Exemplarily, the first gate insulating layer, the second gate insulating layer, the interlayer dielectric layer, and the planarization layer may be sequentially formed on the base layer by a low temperature polysilicon process.

[0088] In the process of preparing the first gate insulating layer and the second gate insulating layer, the first gate insulating layer and the second gate insulating layer need to be photolithographically processed through a photomask to form light-transmitting holes in corresponding areas. In the process of preparing the interlayer dielectric layer and the planarization layer, the interlayer dielectric layer and the planarization layer also need to be photolithographically processed to form anti-overflow grooves and light-transmitting holes in corresponding areas.

[0089] In one example, a polysilicon unit is prepared in the first gate insulating layer, a first gate unit is prepared in the second gate insulating layer, a second gate unit is prepared in the interlayer dielectric layer, and a source-drain unit is prepared in the planarization layer. It should be noted that the source-drain unit can sequentially pass through the interlayer dielectric layer, the first gate insulating layer, and the second gate insulating layer to form an electrical connection with the polysilicon unit.

[0090] In one example, a buffer layer may be prepared between the substrate plate and the TFT circuit layer, and the buffer layer may be used to protect the overall structure of the TFT circuit layer and the display panel.

[0091] In one example, the light-emitting layer may include a pixel defining layer and an organic light-emitting layer. The pixel defining layer may be formed on the circuit layer based on a low-temperature polysilicon process. The organic light-emitting layer may be deposited on the pixel defining layer by an evaporation process. In the preparation process of the pixel defining layer, the pixel defining layer may be formed with an anti-overflow groove and a light-transmitting hole in a corresponding area by photolithography technology.

[0092] In one embodiment, a display device is provided, comprising any one of the display panels described above.

[0093] For specific contents of the display panel, reference may be made to the description of the display panel in the above embodiment, which will not be repeated here.

[0094] In the above-mentioned embodiments, the light-emitting layer is arranged on the TFT substrate; the cathode layer is arranged on the light-emitting layer; the conductive layer is arranged on the cathode layer; the encapsulation layer is arranged on the conductive layer; the light-emitting layer is divided into a pixel area and a non-pixel area; the conductive layer includes a conductive structure, the conductive structure covers the non-pixel area, and the conductive structure is electrically connected to the cathode layer, thereby significantly reducing the cathode surface resistance of the display panel and improving the display unevenness effect caused by the voltage drop (IR Drop). By forming a conductive layer with a conductive structure above the cathode layer of the display panel, and the conductive structure can cover the non-pixel area, thereby reducing the cathode resistance of the display panel and improving the display uniformity without affecting the display effect, the display panel of the present application has a simple structure and a significant effect of improving the cathode voltage drop.

[0095] In one example, the display panel is an AMOLED panel. For example, the display panel can be a large-size top-emitting AMOLED display panel. A conductive solution is used to cover the cathode layer corresponding to the non-pixel area of ​​the AMOLED display panel, that is, a mesh-like interconnected conductive layer is formed on the original cathode layer. This mesh-like conductive layer can significantly reduce the cathode surface resistance of the large-size top-emitting AMOLED display panel and improve the display unevenness caused by IRDrop; it can use photolithography and solution film-forming processes, and is suitable for large-size AMOLED process technologies such as G8.5 generation lines; there is no need for cathode contact hole design and the process difficulty is reduced. In addition, a grid-like metal conductive layer can be realized without the use of a fine mask process, which is suitable for large-size AMOLED panel manufacturing processes.

[0096] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0097] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as constraints on the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A display panel, characterized in that: include: TFT substrate; A light-emitting layer, wherein the light-emitting layer is disposed on the TFT substrate; a cathode layer, the cathode layer being disposed on the light-emitting layer; A conductive layer, the conductive layer being disposed on the cathode layer; an encapsulation layer, the encapsulation layer being disposed on the conductive layer; Among them, the light-emitting layer is divided into a pixel area and a non-pixel area, and the sub-pixel groups in the pixel area are arranged in an array in a regular manner and are set at intervals, and the non-pixel area includes the areas formed between the sub-pixel groups and the periphery of the sub-pixel groups; the conductive layer includes a conductive structure, the conductive structure covers the non-pixel area, and the conductive structure is electrically connected to the cathode layer.

2. The display panel according to claim 1, characterized in that: The conductive structure is a grid-like structure.

3. The display panel according to claim 2, characterized in that: The conductive structure is prepared from a conductive solution.

4. The display panel according to claim 1, characterized in that: The TFT substrate further comprises a substrate plate and a TFT circuit layer; the TFT circuit layer is arranged on the substrate plate.

5. A method for preparing a display panel, characterized in that: include: Providing a TFT substrate; A light-emitting layer is prepared on the TFT substrate; the light-emitting layer is divided into a pixel area and a non-pixel area, the sub-pixel groups in the pixel area are regularly arranged in an array and are arranged at intervals, and the non-pixel area includes areas formed between the sub-pixel groups and around the sub-pixel groups; preparing a cathode layer on the light-emitting layer; preparing a conductive layer on the cathode layer; preparing an encapsulation layer on the conductive layer; The conductive layer includes a conductive structure, which covers the non-pixel area and electrically connects the conductive structure to the cathode layer.

6. The method for preparing a display panel according to claim 5, characterized in that: The step of preparing a conductive layer on the cathode layer comprises: coating a photoresist on the cathode layer; Performing photolithography on the photoresist based on a preset pattern to form a photoresist channel; the preset pattern is a photoresist region pattern above the cathode layer corresponding to the pixel region; Applying a conductive solution on the cathode layer and making the conductive solution flow levelly on the photoresist channel to form a first semi-finished product; The conductive solution in the first semi-finished product is dried to form the conductive structure.

7. The method for preparing a display panel according to claim 6, characterized in that: The photoresist channel is a grid-shaped channel, and the conductive structure is a grid-shaped structure.

8. The method for preparing a display panel according to claim 5, characterized in that: The steps of preparing the TFT substrate include: Providing a substrate plate; A TFT circuit layer is prepared on the substrate plate to form the TFT substrate.

9. A display device, characterized in that: A display panel comprising any one of claims 1 to 4.

10. The display device according to claim 9, characterized in that The display panel is an AMOLED panel.

Images