Current sensor, electronic device and detection device

Abstract

The present invention discloses a current sensor, an electronic device and a detection device, wherein the current sensor comprises a detection circuit and a sensing component, wherein the detection circuit is used to conduct with a circuit to be detected of a chip, and the sensing component comprises a plurality of magnetoresistive units formed on the chip, wherein the magnetization direction of a pinned layer of each magnetoresistive unit is arranged along its thickness direction, and at least two of the plurality of magnetoresistive units are connected to form a half-bridge circuit, wherein the detection circuit comprises at least a first detection section and a second detection section which are arranged in parallel and respectively wound around the two magnetoresistive units, wherein the first detection section generates a first induced magnetic field, and the second detection section generates a second induced magnetic field, and the spiral directions of the current flowing through the first detection section and the current flowing through the second detection section are arranged in opposite directions, so that the first induced magnetic field is opposite to the second induced magnetic field.

Description

Technical Field

[0001] The present invention relates to the field of sensor technology, and in particular to a current sensor, an electronic device and a detection device. Background Art

[0002] In the field of new energy vehicles, current detection is a very important part of chip reliability testing. Internal testing uses built-in self-test technology (Built-In-Self-Test, BIST) to integrate a built-in current sensor (Built-In-Current-Sensor, BICS) between the circuit under test (Circuit Under Test, CUT) and the power supply, and processes and analyzes the current flowing through the circuit under test to obtain defect information of the circuit under test. In common built-in current sensors, the sensing direction of the magnetoresistive sensor is within its plane. Summary of the invention

[0003] The main purpose of the present invention is to provide a current sensor, an electronic device and a detection device, and to provide a current sensor with a wide range based on the tunneling magnetoresistance effect.

[0004] To achieve the above object, the present invention provides a current sensor, comprising:

[0005] A detection circuit, used for conducting with a circuit to be detected of the chip; and

[0006] A sensing component, the sensing component comprising a plurality of magnetoresistive units formed on the chip, the magnetization direction of the pinned layer of each magnetoresistive unit being arranged along the thickness direction thereof, and at least two of the plurality of magnetoresistive units being connected to form a half-bridge circuit;

[0007] Among them, the detection circuit includes at least a first detection section and a second detection section which are arranged in parallel and respectively wound around the two sides of the magnetic resistance units, the first detection section generates a first induced magnetic field, the second detection section generates a second induced magnetic field, and the spiral directions of the current flowing through the first detection section and the second detection section are set in opposite directions, so that the first induced magnetic field is opposite to the second induced magnetic field.

[0008] Optionally, the sensing component includes four magnetoresistive units, and the four magnetoresistive units are connected to form a full-bridge circuit;

[0009] The detection circuit includes two first detection circuits, and each of the first detection circuits has the first detection section and the second detection section, which are arranged around the corresponding magnetic resistance unit.

[0010] Optionally, a plurality of the magnetoresistive units are arranged on the same straight line.

[0011] Optionally, two of the first detection circuits are connected in series; or,

[0012] The two first detection circuits are arranged in parallel.

[0013] Optionally, the sensing component includes four magnetoresistive units, and the four magnetoresistive units are connected to form a full-bridge circuit;

[0014] There are two first detection sections and they are arranged in series with each other. The two first detection sections are respectively wound around two of the magnetic resistance units, and the magnetic field directions of the two first induced magnetic fields generated accordingly are opposite;

[0015] There are two second detection sections which are arranged in series with each other. The two second detection sections are respectively wound around two of the magnetic resistance units, and the magnetic field directions of the two corresponding second induction magnetic fields are opposite.

[0016] Optionally, at least one of the magnetoresistive units comprises a plurality of magnetic tunnel junctions connected in series in sequence; and / or,

[0017] At least one of the magnetoresistive units includes a plurality of magnetic tunnel junction units arranged in parallel, and each of the magnetic tunnel junction units includes a plurality of magnetic tunnel junctions connected in series in sequence.

[0018] Optionally, the detection circuit is arranged around the periphery of each magnetic tunnel junction.

[0019] Optionally, the detection circuit is arranged around the periphery of the array formed by the plurality of magnetic tunnel junction units.

[0020] Optionally, the detection circuit and the top electrodes of each of the magnetoresistive units are arranged on the same plane.

[0021] The present invention further provides an electronic device, comprising the above-mentioned current sensor, wherein the current sensor at least comprises:

[0022] A detection circuit, used for conducting with a circuit to be detected of the chip; and

[0023] A sensing component, the sensing component comprising a plurality of magnetoresistive units formed on the chip, the magnetization direction of a pinned layer of each magnetoresistive unit being arranged along the thickness direction thereof, and at least two of the plurality of magnetoresistive units being connected to form a half-bridge circuit;

[0024] Among them, the detection circuit includes at least a first detection section and a second detection section which are arranged in parallel and respectively wound around the two sides of the magnetic resistance units, the first detection section generates a first induced magnetic field, the second detection section generates a second induced magnetic field, and the spiral directions of the current flowing through the first detection section and the second detection section are set in opposite directions, so that the first induced magnetic field is opposite to the second induced magnetic field.

[0025] The present invention further provides a detection device, comprising the above-mentioned current sensor, wherein the current sensor at least comprises:

[0026] A detection circuit, used for conducting with a circuit to be detected of the chip; and

[0027] A sensing component, the sensing component comprising a plurality of magnetoresistive units formed on the chip, the magnetization direction of the pinned layer of each magnetoresistive unit being arranged along the thickness direction thereof, and at least two of the plurality of magnetoresistive units being connected to form a half-bridge circuit;

[0028] Among them, the detection circuit includes at least a first detection section and a second detection section which are arranged in parallel and respectively wound around the two sides of the magnetic resistance units, the first detection section generates a first induced magnetic field, the second detection section generates a second induced magnetic field, and the spiral directions of the current flowing through the first detection section and the second detection section are set in opposite directions, so that the first induced magnetic field is opposite to the second induced magnetic field.

[0029] In the technical solution of the present invention, the current passed through the detection circuit is the current to be measured, and the resistance value of each of the magnetoresistive units is known. According to the right-hand rule, when the current to be measured passes through the detection circuit, in the bridge structure composed of each of the magnetoresistive units, a magnetic field perpendicular to the plane in which the multiple magnetoresistive units are set is generated on each of the magnetoresistive units. The magnetic field will affect the resistance value of the corresponding magnetoresistive unit. According to the winding method of the detection circuit, the first detection segment and the second detection segment correspondingly generate the first induced magnetic field and the second induced magnetic field in opposite directions, so that the magnetoresistive units therein present a high resistance state and a low resistance state respectively. At this time, by reading the change in the output voltage of the bridge structure, the corresponding magnetic field size is judged and the size of the current to be measured is derived. Under this structure, the detection circuit is designed with the first detection segment and the second detection segment connected in parallel, so that a wider range of circuit quantities can be sensed after the current to be measured is passed, thereby having a larger range. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0031] Figure 1 A schematic diagram of a first embodiment of a current sensor provided by the present invention;

[0032] Figure 2 for Figure 1Schematic diagram of magnetic field direction of medium current sensor;

[0033] Figure 3 for Figure 1 A schematic diagram of an embodiment of a medium magnetic resistance unit;

[0034] Figure 4 for Figure 1 A schematic diagram of another embodiment of a medium magnetic resistance unit;

[0035] Figure 5 for Figure 1 Schematic diagram of the magnetic tunnel junction in the medium magnetoresistive unit;

[0036] Figure 6 A schematic diagram of a second embodiment of a current sensor provided by the present invention;

[0037] Figure 7 This is a schematic diagram of a third embodiment of a current sensor provided by the present invention.

[0038] Description of Figure Numbers:

[0039] Label name Label name 100 Current Sensors 21 First detection line 11 Magnetoresistive unit 211 First detection section 111 Magnetic Tunnel Junction 212 Second detection section 2 Detection circuit

[0040] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0041] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] It should be noted that if a directional indication is involved in the embodiment of the present invention, the directional indication is only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0043] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0044] In the field of new energy vehicles, current detection is a very important part of chip reliability testing, especially in scenarios such as power batteries and drive motors. A wide-range, high-precision micro current sensor is required to monitor the current changes in real time online to determine the working status. There are two ways to detect current: on-chip and off-chip. Compared with off-chip testing, on-chip testing is a more efficient and reliable method. On-chip testing uses built-in self-test technology (Built-In-Self-Test, BIST), integrates a built-in current sensor (Built-In-Current-Sensor, BICS) between the circuit under test (Circuit Under Test, CUT) and the power supply, processes and analyzes the current flowing through the circuit under test, and can obtain defect information of the circuit under test. Among all types of built-in current sensors in BICS, current sensors based on giant magnetoresistance (GMR) or tunneling magnetoresistance (TMR) have great application value due to their advantages such as high sensitivity, small size, low power consumption and compatibility with complementary metal-oxide-semiconductor transistor (CMOS) technology. This type of magnetoresistive sensor detects the current by measuring the magnetic field generated by the current.

[0045] In view of this, the present invention provides a current sensor which detects the magnitude of the current by measuring the magnetic field generated by the current based on the tunneling magnetoresistance effect. Figures 1 to 7 A schematic diagram of an embodiment of a current sensor provided by the present invention.

[0046] Please refer to Figure 1 to Figure 2The current sensor 100 includes a detection circuit 2 and a sensing component, wherein the detection circuit 2 is used to conduct with the circuit to be detected of the chip, and the sensing component includes a plurality of magnetoresistive units 11 formed on the chip, wherein the magnetization direction of the pinned layer of each magnetoresistive unit 11 is arranged along its thickness direction, and at least two magnetoresistive units 11 among the plurality of magnetoresistive units 11 are connected to form a half-bridge circuit, wherein the detection circuit 2 includes at least a first detection segment 211 and a second detection segment 212 which are arranged in parallel and respectively wound around the two magnetoresistive units 11, wherein the first detection segment 211 generates a first induced magnetic field, and the second detection segment 212 generates a second induced magnetic field, and the spiral directions of the current flowing through the first detection segment 211 and the current flowing through the second detection segment 212 are arranged in opposite directions, so that the first induced magnetic field is opposite to the second induced magnetic field.

[0047] In the technical solution of the present invention, the current passed through the detection circuit 2 is the current to be measured, and the resistance value of each of the magnetoresistive units 11 is known. According to the right-hand rule, when the current to be measured passes through the detection circuit 2, in the bridge structure composed of each of the magnetoresistive units 11, a magnetic field perpendicular to the plane in which the multiple magnetoresistive units 11 are set is generated on each of the magnetoresistive units 11, and the magnetic field will affect the resistance value of the corresponding magnetoresistive unit 11. According to the winding method of the detection circuit 2, the first detection segment 211 and the second detection segment 212 correspondingly generate the first induced magnetic field and the second induced magnetic field in opposite directions, so that the magnetoresistive unit 11 therein presents a high resistance state and a low resistance state respectively. At this time, by reading the change in the output voltage of the bridge structure, the corresponding magnetic field size is judged and the size of the current to be measured is derived. Under this structure, the detection circuit 2 is designed with the first detection segment 211 and the second detection segment 212 connected in parallel, so that a wider range of circuit quantities can be sensed after the current to be measured is passed, thereby having a larger range.

[0048] The present invention does not limit the composition of each of the magnetoresistive units 11. In one embodiment, at least one of the magnetoresistive units 11 includes a plurality of magnetic tunnel junctions 111 connected in series in sequence. In another embodiment, at least one of the magnetoresistive units 11 includes a plurality of magnetic tunnel junctions 111 connected in series in sequence. In other embodiments, each of the magnetoresistive units 11 is respectively composed of a plurality of magnetic tunnel junctions 111 connected in series and / or in parallel, that is, each of the magnetoresistive units 11 can be composed of a single magnetic tunnel junction 111, or a plurality of magnetic tunnel junctions 111 connected in series and / or in parallel. Specifically, the magnetoresistive units 11 can be rationally planned according to the design range of the current current sensor 100. The structural composition of each of the magnetoresistive units 11 can be the same or different. In this embodiment, the composition of each of the magnetoresistive units 11 is the same, so that the plurality of magnetoresistive units 11 have good consistency, which is convenient for calculation and analysis comparison.

[0049] Furthermore, the present invention does not limit the winding method of the first detection section 211, the second detection section 212 and each of the magnetic tunnel junctions 111. In one embodiment, please refer to Figure 3 , the detection circuit 2 is arranged around the peripheral side of each magnetic tunnel junction 111. In another embodiment, please refer to Figure 4 , the detection circuit 2 is wound around the array composed of multiple magnetic tunnel junction units. Both winding methods can achieve their functions. In comparison, the method of winding the detection circuit 2 around the magnetic tunnel junctions 111 is difficult to process, has higher precision requirements, and takes longer time to process.

[0050] Furthermore, the basic film structure of the magnetic tunnel junction 111 in the embodiment of the present invention is as follows: Figure 5 As shown, it includes a seed layer, an antiferromagnetic layer or a synthetic antiferromagnetic layer, a pinned layer, a tunneling layer, a free layer and a covering layer, etc., which are arranged in sequence. The direction of the pinned layer is pinned by the antiferromagnetic layer or the synthetic antiferromagnetic layer below it in a direction perpendicular to the film plane, the magnetic moment direction of the free layer can rotate with the vertical external magnetic field, and form a certain angle with the magnetic moment direction of the pinned layer, the tunneling layer plays a role of separation, and electrons move through the tunneling layer to produce a tunneling effect, the covering layer is a protective layer to prevent oxidation, the substrate is a manufacturing base, the seed layer is used to improve the roughness of the substrate, so that its surface is smoother, thereby providing a lattice structure that is more matched with the above-mentioned layer structure that plays a functional role, so as to achieve lattice matching, the magnetic moment direction of the pinned layer is fixed and points perpendicular to the plane direction, and the magnetic moment direction of the free layer can rotate relatively under the action of the corresponding magnetic field force to form an angle with the magnetic moment direction of the pinned layer. Each of the magnetoresistive units 11 is composed of a magnetic tunnel structure with perpendicular magnetic anisotropy, so that it changes under the influence of the magnetic field in the perpendicular plane direction generated by the detection circuit 2, so that the angle between it and the magnetic moment direction of the pinned layer changes, thereby causing the resistance value to change. Under this structure, the storage density and reliability of the current sensor 100 are improved compared with conventional designs.

[0051] It should be noted that the resistance value changes with the change of the angle between the magnetization directions of the free layer and the pinned layer. When the magnetic moment direction of the free layer is the same as that of the pinned layer, it is in a low resistance state. When the magnetic moment direction of the free layer is opposite to that of the pinned layer, it is in a high resistance state.

[0052] Moreover, in one embodiment of the present invention, the detection circuit 2 and the top electrode of each of the magnetoresistive units 11 are arranged on the same plane, that is, during processing, the detection circuit 2 and the corresponding top electrode of the magnetic tunnel junction 111 can be integrated on the same layer of the circuit layout. Such a setting simplifies the process steps and reduces the distance between the detection circuit 2 and the magnetoresistive unit 11. It should be noted that the processing and preparation of the top electrode and the detection circuit 2 can be achieved simultaneously through steps such as photolithography and evaporation.

[0053] It should be noted that in the present invention, it is only necessary to make the magnetic field generated by the detection circuit 2 affect the resistance state of some of the magnetoresistive units 11. In one embodiment, the sensing component includes four magnetoresistive units 11, and the four magnetoresistive units 11 are connected to form a full-bridge circuit. The detection circuit 2 includes two first detection circuits 21, and each of the first detection circuits 21 has the first detection segment 211 and the second detection segment 212, so as to be arranged around the corresponding magnetoresistive unit 11. That is, the four magnetoresistive units 11 are respectively affected by the two first induced magnetic fields and the two second induced magnetic fields to change into two high resistance states and two low resistance states.

[0054] For further information, please refer to Figure 2 , the two first detection circuits 21 are arranged in parallel, and when the current is input into the detection circuit 2, it is first shunted into the two first detection circuits 21, and then a second shunting is performed in each of the first detection circuits 21 to enter the corresponding first detection section 211 and the second detection section 212. In this structural state, the first detection section 211 and the second detection section 212 surrounded by the circumference of the two magnetic resistance units 11 on the same first detection circuit 21 are both arc-shaped, and the openings of the arcs are arranged oppositely. When the current to be measured is passed into the detection circuit 2, the size of the current to be measured can be deduced by reading the change in the output voltage of the bridge.

[0055] In another embodiment, please refer to Figure 7 The two first detection circuits 21 are arranged in series. After the current to be measured is passed through, two magnetic fields with opposite directions are formed in each of the first detection circuits 21, so that the resistance state of the two magnetic resistance units 11 wound around the first detection segment 211 and the second detection segment 212 in each of the first detection circuits 21 changes from high to low.

[0056] In other embodiments, please refer to Figure 6, the sensor assembly includes four magnetoresistive units 11, the four magnetoresistive units 11 are connected to form a full-bridge circuit, the first detection section 211 is provided with two and arranged in series, the two first detection sections 211 are respectively wound around two of the magnetoresistive units 11, and the magnetic field directions of the two first induced magnetic fields generated are opposite, the second detection section 212 is provided with two and arranged in series, the two second detection sections 212 are respectively wound around two of the magnetoresistive units 11, and the magnetic field directions of the two second induced magnetic fields generated are opposite. At this time, after the current to be measured is passed, it enters two branches after a shunt, and the first detection section 211 and the second detection section 212 on each branch are not shunted, but it is necessary to pay attention to the winding direction of the two first detection sections 211 or the two second detection sections 212 on the same branch on the corresponding two magnetoresistive units 11. It is necessary to ensure that the arc-shaped openings formed by the two first detection sections 211 corresponding to the two magnetoresistive units 11 are arranged oppositely, so that two induced magnetic fields in opposite directions can be formed around the opposite sides of the two magnetoresistive units 11.

[0057] Moreover, in other embodiments, two of the first detection segments 211 and the second detection segments 212 are respectively provided, and are both provided in parallel and staggered with each other. Along the arrangement direction of each of the first detection segments 211 and each of the second detection segments 212, the induced magnetic fields formed by adjacent first detection segments 211 and second detection segments 212 on the corresponding magnetoresistive units 11 are in opposite directions, so that the four magnetoresistive units 11 are distributed in high and low resistance states, respectively.

[0058] In this embodiment, please refer to Figure 2 The four magnetoresistive units 11 are arranged on a straight line, which is orthogonal to the flow direction of the current in the detection circuit 2. This facilitates the wiring arrangement of the multiple magnetoresistive units 11 themselves, which is conducive to miniaturized design.

[0059] In the existing built-in current sensor, the detection circuit needs to be distributed on the top of the magnetoresistive unit to generate the magnetic field to be measured in the plane of the magnetoresistive unit. Therefore, it is necessary to add an insulating layer of a certain thickness, such as silicon oxide or silicon nitride, to isolate the detection circuit from the magnetoresistive unit. The magnetic field to be measured generated by the current to be measured is greatly reduced as the distance between the detection circuit and the magnetoresistive unit increases. The present invention proposes to use a vertical magnetic tunnel junction to make a current sensor 100. The detection circuit 2 is distributed in a ring shape along the magnetic tunnel junction 111. Therefore, during micro-nano processing, an insulating layer may not be used. The detection circuit 2 and the corresponding top electrode of the magnetic tunnel junction 111 are directly integrated in the same layer of the layout, which simplifies the process steps and reduces the distance between the detection circuit 2 and the magnetoresistive unit 11. The magnetic field to be measured on the magnetoresistive unit 11 is improved compared with the existing solution.

[0060] In the technical solution of the present invention, the detection circuit 2 and the four magnetoresistive units 11 arranged around the magnetoresistive units 11 together constitute a Wheatstone full-bridge current sensor. The first detection segment 211 or the second detection segment 212 surrounding each magnetoresistive unit 11 generates a magnetic field perpendicular to the plane direction after the current to be measured is passed through, and different currents surround the direction to generate induced magnetic fields in opposite directions, thereby affecting the magnetic moment direction of the free layer in the magnetic tunnel junction 111 with perpendicular magnetic anisotropy, causing the resistance state of the magnetoresistive unit 11 to change, resulting in a change in the output voltage, thereby forming a built-in, wide-range, high-precision miniature current sensor 100. In addition, as the size of the magnetic tunnel junction 111 is miniaturized, the radius of the detection circuit 2 arranged around the magnetoresistive unit 111 and the distance between it and the magnetic tunnel junction 111 can also be further reduced, and the magnetic field generated by the current to be measured will also be further increased, thereby improving the sensitivity of the current sensor 100 and realizing current detection as small as microamperes or even nanoamperes. The design of this current sensor 100 can achieve wide range and high precision applications. Large current detection can be achieved by adjusting parameters such as the width, radius, and distance from the magnetic resistance unit 11 of the detection circuit 2. It can be used for detecting the battery current of new energy vehicles, etc., and has a wide range of applications.

[0061] The present invention further provides an electronic device, including the above-mentioned current sensor 100. The electronic device includes all the technical features of the above-mentioned current sensor 100, and therefore also has the technical effects brought by all the above-mentioned technical features, which will not be described one by one here.

[0062] The present invention further provides a detection device, including the above-mentioned current sensor 100. The detection device includes all the technical features of the above-mentioned current sensor 100, and therefore also has the technical effects brought by all the above-mentioned technical features, which will not be described one by one here.

[0063] The above description is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the inventive concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. A current sensor, characterized in that: include: A detection circuit, used for conducting with a circuit to be detected of the chip; as well as, A sensing component, the sensing component comprising a plurality of magnetoresistive units formed on the chip, the magnetization direction of the pinned layer of each magnetoresistive unit being arranged along the thickness direction thereof, at least two of the plurality of magnetoresistive units being connected to form a half-bridge circuit; each of the magnetoresistive units being composed of a single vertical magnetic tunnel junction, or being composed of a plurality of vertical magnetic tunnel junctions connected in series and / or in parallel; Among them, the detection circuit includes at least a first detection section and a second detection section which are arranged in parallel and respectively wound around the two sides of the magnetic resistance units, the first detection section generates a first induced magnetic field, the second detection section generates a second induced magnetic field, and the spiral directions of the current flowing through the first detection section and the second detection section are set in opposite directions, so that the first induced magnetic field is opposite to the second induced magnetic field.

2. The current sensor according to claim 1, characterized in that The sensing assembly includes four magnetoresistive units, and the four magnetoresistive units are connected to form a full-bridge circuit; The detection circuit includes two first detection circuits, and each of the first detection circuits has the first detection section and the second detection section, which are arranged around the corresponding magnetic resistance unit.

3. The current sensor according to claim 1 or 2, characterized in that: The plurality of magnetoresistive units are arranged on the same straight line.

4. The current sensor according to claim 2, characterized in that: The two first detection circuits are arranged in series; or, The two first detection circuits are arranged in parallel.

5. The current sensor according to claim 1, wherein: The sensing assembly includes four magnetoresistive units, and the four magnetoresistive units are connected to form a full-bridge circuit; There are two first detection sections and they are arranged in series with each other. The two first detection sections are respectively wound around two of the magnetic resistance units, and the magnetic field directions of the two first induced magnetic fields generated accordingly are opposite; There are two second detection sections which are arranged in series with each other. The two second detection sections are respectively wound around two of the magnetic resistance units, and the magnetic field directions of the two corresponding second induction magnetic fields are opposite.

6. The current sensor according to claim 1, wherein: At least one of the magnetoresistive units includes a plurality of magnetic tunnel junction units arranged in parallel, and each of the magnetic tunnel junction units includes a plurality of magnetic tunnel junctions connected in series in sequence.

7. The current sensor according to claim 6, characterized in that The detection circuit is arranged around the peripheral side of each magnetic tunnel junction.

8. The current sensor according to claim 6, characterized in that: The detection circuit is arranged around the periphery of the array formed by the plurality of magnetic tunnel junction units.

9. The current sensor according to claim 1, wherein: The detection circuit and the top electrodes of each of the magnetoresistive units are arranged on the same plane.

10. An electronic device, characterized in that: Comprising a current sensor as claimed in any one of claims 1 to 9.

11. A detection device, characterized in that: Comprising a current sensor as claimed in any one of claims 1 to 9.

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