Organic light emitting display device

Abstract

An organic light-emitting display device is provided, comprising: a substrate, comprising a light-emitting region and a reflective region; a plurality of sensing patterns, which are arranged in the light-emitting region and the reflective region and comprise a material having a first reflectivity; and a reflective pattern, which is arranged in the reflective region and comprises a material having a second reflectivity and overlaps with the plurality of sensing patterns.

Description

[0001] This application is a divisional application of the invention patent application "Organic Light Emitting Display Device" with application date of September 29, 2016 and application number 201610864942.3. Technical Field

[0002] Exemplary embodiments of the present invention relate to an organic light emitting display ("OLED") device and a method of manufacturing the OLED device. More particularly, exemplary embodiments relate to an OLED device having a mirror function and a touch function and a method of manufacturing the OLED device. Background Art

[0003] Flat panel display ("FPD") devices are widely used as display devices for electronic devices due to their light weight and thinness compared to cathode ray tube ("CRT") display devices. Typical examples of flat panel display devices include liquid crystal display ("LCD") devices and organic light emitting diode ("OLED") display devices. Compared with LCD, OLED has many advantages such as higher brightness and wider viewing angle. In addition, because OLED display devices do not require backlight, OLED display devices can be made thinner than LCD. In an OLED display device, electrons and holes are injected into an organic thin layer through a cathode and an anode, and then recombine in the organic thin layer to generate excitons, thereby emitting light of a predetermined wavelength.

[0004] Recently, a mirror OLED device has been developed, which reflects an image of an object (or target) located in front of the OLED device by including a reflective member. In addition, an OLED device having a mirror function and a touch function has also been developed. Summary of the invention

[0005] In order to manufacture an organic light emitting display ("OLED") device having a mirror function and a touch function, an additional process for forming an electrode layer having a touch function is generally employed, thereby increasing manufacturing costs.

[0006] Exemplary embodiments of the present invention provide an OLED device having a mirror function and a touch function.

[0007] Exemplary embodiments of the present invention also provide a method of manufacturing the OLED device.

[0008] In an exemplary embodiment of an OLED device according to the present invention, the OLED device includes: a substrate including a light-emitting area and a reflective area; a plurality of sensing patterns arranged in the light-emitting area and the reflective area and including a material having a first reflectivity; and a reflective pattern arranged in the reflective area, including a material having a second reflectivity and overlapping the plurality of sensing patterns.

[0009] In an exemplary embodiment, the OLED device may further include an opposite substrate facing the substrate. A sensing pattern may be disposed on a first surface of the opposite substrate, the sensing pattern may be disposed between the substrate and the opposite substrate, and a reflective pattern may be disposed on the sensing pattern. The OLED device may further include: an insulating layer disposed between the sensing pattern and the reflective pattern and including an adhesive material.

[0010] In exemplary embodiments, the reflective pattern may be electrically connected to the substrate through a conductive adhesive member.

[0011] In an exemplary embodiment, the OLED device may further include a thin film encapsulation layer disposed on the substrate. The sensing pattern may be disposed on the thin film encapsulation layer, and the reflective pattern may be disposed on the sensing pattern. The OLED device may further include: an insulating layer disposed between the sensing pattern and the reflective pattern and including an adhesive material.

[0012] In an exemplary embodiment, the OLED device may further include a first thin film encapsulation layer disposed on the substrate. The sensing pattern may be disposed on the first thin film encapsulation layer, and the reflective pattern may be disposed on the sensing pattern. The OLED device may further include a second thin film encapsulation layer disposed between the sensing pattern and the reflective pattern.

[0013] In an exemplary embodiment, the sensing patterns may be classified into a plurality of sensing groups including a predetermined number of sensing patterns among the plurality of sensing patterns. When a touch signal is applied to the sensing pattern, a sensing group among the plurality of sensing groups to which the touch signal is applied may be detected, and a precise touch position in the sensing group to which the touch signal is applied may be detected.

[0014] In an exemplary embodiment, when a touch signal is applied to the sensing group, a signal the same as the touch signal may be applied to the reflective pattern.

[0015] In an exemplary embodiment, the reflective pattern may include a plurality of sub-reflective patterns having an area corresponding to an area of ​​one of the plurality of sensing groups. When a touch signal is applied to the sensing group, a signal identical to the touch signal may be applied to the sub-reflective pattern overlapping the sensing group to which the touch signal is applied.

[0016] In an exemplary embodiment, the reflective pattern may include a plurality of sub-reflective patterns having an area corresponding to an area of ​​a predetermined number of sensing patterns among the plurality of sensing patterns. The sub-reflective patterns may sense a wide range of touch positions, and after the sub-reflective patterns sense the touch positions, the sensing patterns may sense a precise touch position.

[0017] In an exemplary embodiment, the reflective pattern may include a plurality of sub-reflective patterns having an area corresponding to an area of ​​one sensing pattern. One sub-reflective pattern may be electrically connected to one sensing pattern.

[0018] In an exemplary embodiment of a method for manufacturing an OLED device, the OLED device includes a substrate including a light-emitting area and a reflective area, and the method includes: forming a plurality of sensing patterns including a material having a first reflectivity on the light-emitting area and the reflective area, and forming a reflective pattern including a material having a second reflectivity on the reflective area, wherein the reflective pattern overlaps the sensing pattern.

[0019] In an exemplary embodiment, the step of forming the sensing pattern and the step of forming the reflection pattern may include: forming the sensing pattern on a first surface of the opposite substrate facing the substrate; forming an insulating layer on the sensing pattern; and forming the reflection pattern on the insulating layer. The sensing pattern and the reflection pattern may be disposed between the substrate and the opposite substrate.

[0020] In an exemplary embodiment, the method may further include electrically connecting the reflective pattern to the substrate through a conductive adhesive member.

[0021] In an exemplary embodiment, the step of forming the sensing pattern and the step of forming the reflective pattern may include: forming a thin film encapsulation layer on the substrate; forming the sensing pattern on the thin film encapsulation layer; forming an insulating layer on the sensing pattern; and forming the reflective pattern on the insulating layer.

[0022] In an exemplary embodiment, the step of forming a sensing pattern and the step of forming a reflective pattern may include: forming a first thin film encapsulation layer on a substrate; forming a sensing pattern on the first thin film encapsulation layer; forming a second thin film encapsulation layer including a material identical to that of the first thin film encapsulation layer on the sensing pattern; and forming a reflective pattern on the second thin film encapsulation layer.

[0023] In an exemplary embodiment, the sensing patterns may be classified into a plurality of sensing groups including a predetermined number of sensing patterns among the plurality of sensing patterns. When a touch signal is applied to the sensing pattern, the sensing group to which the touch signal is applied may be detected, and a precise touch position in the sensing group to which the touch signal is applied may be detected.

[0024] In an exemplary embodiment, when a touch signal is applied to the sensing group, a signal the same as the touch signal may be applied to the reflective pattern.

[0025] In an exemplary embodiment, the reflective pattern may include a plurality of sub-reflective patterns having an area corresponding to an area of ​​one sensing group. When a touch signal is applied to the sensing group, a signal identical to the touch signal may be applied to the sub-reflective pattern overlapping the sensing group to which the touch signal is applied.

[0026] In an exemplary embodiment, the reflective pattern may include a plurality of sub-reflective patterns having an area corresponding to an area of ​​a predetermined number of sensing patterns among the plurality of sensing patterns. The sub-reflective patterns may sense a wide range of touch positions, and after the sub-reflective patterns sense the touch positions, the sensing patterns may sense a precise touch position. One sub-reflective pattern may be electrically connected to one sensing pattern.

[0027] In exemplary embodiments, the reflective pattern may include a plurality of sub-reflective patterns having an area corresponding to an area of ​​one sensing pattern.

[0028] According to an exemplary embodiment, the OLED device includes a reflective member having a mirror function and a touch function. Therefore, an additional process for forming an electrode layer having a touch function can be omitted. In this way, the manufacturing cost can be reduced.

[0029] In addition, the OLED device includes a first reflective member disposed in the reflective region and a second reflective member disposed in the light emitting region and the reflective region. Therefore, diffuse reflection occurring at the edge of the first reflective member can be reduced.

[0030] In addition, the OLED device includes a thin film encapsulation layer. Therefore, a flexible OLED device having a mirror function and a touch function can be manufactured. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments of the present invention with reference to the accompanying drawings, in which:

[0032] Figure 1 is a plan view showing an exemplary embodiment of an organic light emitting display ("OLED") device according to the present invention;

[0033] Figure 2 It is along Figure 1 A cross-sectional view taken along line II';

[0034] Figures 3 to 10 It shows the manufacturing Figure 2 A cross-sectional view of a method for an OLED device;

[0035] Fig.11 It is shown Figure 2 A plan view of the reflection pattern;

[0036] Fig.12 It is shown Figure 2 A plan view of a sensing pattern;

[0037] Fig.13 It is shown Fig.11 The reflection pattern and Fig.12 A plan view of a sensing pattern;

[0038] Fig.14 It is shown Figure 2 A plan view of the reflection pattern;

[0039] Fig.15 It is shown Figure 2 A plan view of a sensing pattern;

[0040] Fig.16 It is shown Fig.14 The reflection pattern and Fig.15 A plan view of a sensing pattern;

[0041] Fig.17 It is shown Figure 2 A plan view of the reflection pattern;

[0042] Fig.18 It is shown Figure 2 A plan view of a sensing pattern;

[0043] Fig.19 It is shown Fig.17 The reflection pattern and Fig.18 A plan view of a sensing pattern;

[0044] Fig. 20 It is shown Figure 2 A plan view of the reflection pattern;

[0045] Fig.21 It is shown Figure 2 A plan view of a sensing pattern;

[0046] Fig. 22 It is shown Fig. 20 The reflection pattern and Fig.21 A plan view of a sensing pattern;

[0047] Fig.23 It is shown Figure 2 A plan view of the reflection pattern;

[0048] Fig.24 It is shown Figure 2 A plan view of a sensing pattern;

[0049] Fig.25 It is shown Fig.23 The reflection pattern and Fig.24 A plan view of a sensing pattern;

[0050] Fig.26 is a plan view showing an exemplary embodiment of an OLED device according to the present invention;

[0051] Fig. 27 It is along Fig.26 A cross-sectional view taken along line IV-IV';

[0052] Figure 28 to Figure 35 It shows the manufacturing Fig. 27 A cross-sectional view of a method for an OLED device;

[0053] Fig.36 It is shown Fig. 27 A plan view of the reflection pattern;

[0054] Fig.37 It is shown Fig. 27 A plan view of a sensing pattern;

[0055] Fig.38 It is shown Fig.36 The reflection pattern and Fig.37 A plan view of a sensing pattern;

[0056] Fig.39 It is shown Fig. 27 A plan view of the reflection pattern;

[0057] Fig.40 It is shown Fig. 27 A plan view of a sensing pattern;

[0058] Fig.41 It is shown Fig.39 The reflection pattern and Fig.40 A plan view of a sensing pattern;

[0059] Fig.42 It is shown Fig. 27 A plan view of the reflection pattern;

[0060] Fig.43 It is shown Fig. 27 A plan view of a sensing pattern;

[0061] Fig.44 It is shown Fig.42 The reflection pattern and Fig.43 A plan view of a sensing pattern;

[0062] Fig.45 is a plan view showing an exemplary embodiment of an OLED device according to the present invention;

[0063] Fig.46 It is along Fig.45 A cross-sectional view taken along line V-V';

[0064] Figures 47 to 54 It shows the manufacturing Fig.46 A cross-sectional view of a method for an OLED device;

[0065] Fig.55 It is shown Fig.46 A plan view of the reflection pattern;

[0066] Fig.56 It is shown Fig.46 A plan view of a sensing pattern;

[0067] Fig.57 It is shown Fig.55 The reflection pattern and Fig.56 A plan view of a sensing pattern;

[0068] Fig.58 is a plan view showing an exemplary embodiment of an OLED device according to the present invention;

[0069] Fig.59 It is along Fig.58 A cross-sectional view taken along line VI-VI';

[0070] Figure 60 to Figure 67 It shows the manufacturing Fig.59 A cross-sectional view of a method for an OLED device;

[0071] Fig.68 It is shown Fig.59 A plan view of the reflection pattern;

[0072] Fig.69 It is shown Fig.59 A plan view of a sensing pattern;

[0073] Fig.70 It is shown Fig.68 The reflection pattern and Fig.69 A plan view of a sensing pattern;

[0074] Fig.71 It is shown Fig.59 A plan view of the reflection pattern;

[0075] Fig.72 It is shown Fig.59 A plan view of a sensing pattern;

[0076] Fig.73 It is shown Fig.71 The reflection pattern and Fig.72 A plan view of a sensing pattern;

[0077] Fig.74 It is shown Fig.59 A plan view of the reflection pattern;

[0078] Fig.75 It is shown Fig.59 A plan view of a sensing pattern;

[0079] Fig.76 It is shown Fig.74 The reflection pattern and Fig.75 A plan view of a sensing pattern;

[0080] Fig.77 It is shown Fig.59 A plan view of the reflection pattern;

[0081] Fig.78 It is shown Fig.59 A plan view of a sensing pattern;

[0082] Fig.79 It is shown Fig.77 The reflection pattern and Fig.78 A plan view of a sensing pattern;

[0083] Fig.80 It is shown Fig.59 A plan view of the reflection pattern;

[0084] Fig.81 It is shown Fig.59 A plan view of a sensing pattern;

[0085] Fig.82 It is shown Fig.80 The reflection pattern and Fig.81 A plan view of a sensing pattern;

[0086] Fig.83 is a plan view showing an exemplary embodiment of an OLED device according to the present invention;

[0087] Fig.84 It is along Fig.83 A cross-sectional view taken along line VII-VII';

[0088] Figures 85 to 92 It shows the manufacturing Fig.84 A cross-sectional view of a method for an OLED device;

[0089] Fig.93 It is shown Fig.84 A plan view of the reflection pattern;

[0090] Fig.94 It is shown Fig.84 A plan view of a sensing pattern;

[0091] Fig.95 It is shown Fig.93 The reflection pattern and Fig.94 A plan view of a sensing pattern;

[0092] Fig.96 It is shown Fig.84 A plan view of the reflection pattern;

[0093] Fig.97 It is shown Fig.84 A plan view of a sensing pattern;

[0094] Fig.98 It is shown Fig.96 The reflection pattern and Fig.97 A plan view of a sensing pattern;

[0095] Fig.99 It is shown Fig.84 A plan view of the reflection pattern;

[0096] Fig.100 It is shown Fig.84 A plan view of a sensing pattern;

[0097] Fig.101 It is shown Fig.99 The reflection pattern and Fig.100 A plan view of a sensing pattern;

[0098] Fig.102 It is shown Fig.84 A plan view of the reflection pattern;

[0099] Fig.103 It is shown Fig.84 A plan view of a sensing pattern;

[0100] Fig.104 It is shown Fig.102 The reflection pattern and Fig.103 A plan view of a sensing pattern;

[0101] Fig.105 It is shown Fig.84 A plan view of the reflection pattern;

[0102] Fig.106 It is shown Fig.84 a plan view of a sensing pattern; and

[0103] Fig.107 It is shown Fig.105 The reflection pattern and Fig.106 A plan view of the sensing pattern. DETAILED DESCRIPTION

[0104] Hereinafter, the present invention will be explained in detail with reference to the accompanying drawings. However, the present invention can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that the present invention will be thorough and complete, and these embodiments will fully convey the scope of the present invention to those skilled in the art. The same reference numerals represent the same elements throughout.

[0105] It will be understood that when an element is referred to as being “on” another element, the element can be directly on the other element or intervening elements may be present therebetween. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.

[0106] It will be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings herein, the "first element", "first component", "first region", "first layer" or "first part" discussed below may be referred to as a second element, second component, second region, second layer or second part.

[0107] The terms used herein are only for the purpose of describing specific embodiments and are not intended to be limiting. As used herein, unless the content clearly indicates otherwise, the singular "one (kind / person)" and "the / said" are intended to include plural forms (including "at least one (kind)"). "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more related listed items. It will also be understood that when the term "includes" and / or its variations or "comprising" and / or its variations are used in this specification, it means that there are described features, regions, wholes, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components and / or their groups.

[0108] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element as shown in the figures. It will be understood that the relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. In an exemplary embodiment, when the device in one of the drawings is flipped, the elements described as being on the "lower" side of the other elements will then be positioned as being on the "upper" side of the other elements. Therefore, depending on the specific orientation of the drawings, the exemplary term "lower" may include both "lower" and "upper" orientations. Similarly, when the device in one of the drawings is flipped, the elements described as being "below" or "beneath" other elements will then be positioned as being "above" other elements. The exemplary terms "below..." or "under..." may therefore include both "above..." and "below..." orientations.

[0109] As used herein, "about" or "approximately" is inclusive of the stated value and means within an acceptable range of deviation for the particular value determined by one of ordinary skill in the art, taking into account the measurements being discussed and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0110] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. It will also be understood that, unless expressly defined herein, terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present invention, and will not be interpreted in an ideal or overly formal sense.

[0111] Exemplary embodiments are described herein with reference to cross-sectional views as schematic diagrams of idealized embodiments. In this way, variations in the shapes of the diagrams caused by, for example, manufacturing techniques and / or tolerances will be expected. Therefore, the embodiments described herein should not be construed as being limited to the specific shapes of the regions shown herein, but will include deviations in shapes caused, for example, by manufacturing. In exemplary embodiments, the regions shown or described as flat may generally have rough and / or nonlinear features. In addition, the sharp angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shapes of the regions, nor are they intended to limit the scope of the claims.

[0112] Figure 1 is a plan view illustrating an organic light emitting display ("OLED") device according to an exemplary embodiment of the present invention. Figure 2 It is along Figure 1 A cross-sectional view taken along line II'.

[0113] Reference Figure 1 and Figure 2 , an OLED device according to an exemplary embodiment of the present invention may include a light emitting region II and a reflective region III. Pixels 60, 70, and 80 may be located in the light emitting region II, and a transparent window may be located in the reflective region III. In an exemplary embodiment, for example, pixel 60 may be a pixel emitting red, pixel 70 may be a pixel emitting green, and pixel 80 may be a pixel emitting blue.

[0114] The reflective member may be disposed in the light emitting region II and the reflective region III. The reflective member may include a first reflective member disposed in the reflective region III and a second reflective member disposed in the light emitting region II and the reflective region III. The first reflective member may have a reflectivity different from that of the second reflective member. When the reflective member includes only the first reflective member, diffuse reflection may occur at the edge of the first reflective member. However, the OLED device according to an exemplary embodiment of the present invention includes a second reflective member disposed in the light emitting region II and the reflective region III. Therefore, diffuse reflection occurring at the edge of the first reflective member may be reduced.

[0115] The first reflective member according to an exemplary embodiment of the present invention may be a first reflective pattern 370 including a material having a predetermined reflectivity. In addition, the second reflective member according to an exemplary embodiment of the present invention may be a sensing pattern 390 including a material having a predetermined reflectivity and configured to sense a touch position. The reflective pattern 370 may overlap the sensing pattern 390.

[0116] The sensing pattern 390 can be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when contacting an electrical conductor, the capacitance of the sensing pattern 390 around the touch position is changed. Therefore, the touch panel sensor (not shown) can determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance. However, the present invention is not limited to this, and the reflective pattern 370 can be used as a sensing electrode of a self-capacitive touch screen panel. In addition, both the reflective pattern 370 and the sensing pattern 390 can be used as a sensing electrode of a self-capacitive touch screen panel.

[0117] The OLED 100 according to an exemplary embodiment of the present invention includes a first substrate 110, a buffer layer 115, a first insulating layer 150, a second insulating layer 190, a third insulating layer 270, a light emitting structure, a pixel defining layer 310, a reflective pattern 370, a sensing pattern 390, and a second substrate 350. Here, the light emitting structure includes a semiconductor element 250, a lower electrode 290, a light emitting layer 330, and an upper electrode 340. The semiconductor element 250 includes an active pattern (active layer) 130, a gate electrode 170, a source electrode 210, and a drain electrode 230. An opening 380 is defined in the reflective pattern 370.

[0118] The OLED device 100 may include a plurality of pixel regions. One pixel region may include a light emitting region II and a reflective region III. The reflective region III may substantially surround the light emitting region II. The semiconductor element 250, the lower electrode 290, the light emitting layer 330, and a portion of the upper electrode 340 may be disposed in the light emitting region II. In addition, the reflective pattern 370 may be disposed in the reflective region III, and the sensing pattern 390 may be disposed in the light emitting region II and the reflective region III.

[0119] A display image may be displayed in the light emitting region II. An image of an object located in front of the OLED device 100 may be reflected in the reflective region III.

[0120] The light emitting structure may be disposed on the first substrate 110. The first substrate 110 may include a transparent material. In an exemplary embodiment, the first substrate 110 may include, for example, quartz, artificial quartz, calcium fluoride, fluorine-doped quartz, soda-lime glass, alkali-free glass, etc. In an optional exemplary embodiment, the first substrate 110 may include a flexible transparent resin substrate. Here, the flexible transparent resin substrate for the first substrate 110 may include a polyimide substrate. In an exemplary embodiment, the polyimide substrate may include, for example, at least one of a first polyimide layer, a barrier film layer, a second polyimide layer, etc. When the polyimide substrate is thin and flexible, the polyimide substrate may be disposed on a rigid glass substrate to help support the formation of the light emitting structure. That is, in an exemplary embodiment, the first substrate 110 may have a structure in which a first polyimide layer, a barrier film layer, and a second polyimide layer are stacked on a glass substrate. Here, after disposing the insulating layer on the second polyimide layer, the light emitting structure (eg, the semiconductor element 250 , the capacitor, the lower electrode 290 , the light emitting layer 330 , the upper electrode 340 , etc.) may be disposed on the insulating layer.

[0121] After the light emitting structure is disposed on the insulating layer, the glass substrate may be removed. Because the polyimide substrate is thin and flexible, it may be difficult to directly dispose the light emitting structure on the polyimide substrate. Therefore, the light emitting structure is disposed on a rigid glass substrate, and then the polyimide substrate may be used as the first substrate 110 after removing the glass substrate. Because the OLED device 100 includes the light emitting region II and the reflective region III, the first substrate 110 may also include the light emitting region II and the reflective region III.

[0122] The buffer layer 115 may be disposed on the first substrate 110. The buffer layer 115 may extend from the light emitting region II into the reflective region III. The buffer layer 115 may prevent metal atoms and / or impurities from diffusing (e.g., outgassing) from the first substrate 110. In addition, the buffer layer 115 may control the heat transfer rate in the crystallization process for forming the active pattern 130, thereby obtaining a substantially uniform active pattern 130. In addition, the buffer layer 115 may improve the surface flatness of the first substrate 110 when the surface of the first substrate 110 is relatively irregular. Depending on the type of the first substrate 110, at least two buffer layers may be disposed on the first substrate 110, or no buffer layer may be disposed.

[0123] The semiconductor element 250 may include an active pattern 130, a gate electrode 170, a source electrode 210, and a drain electrode 230. In an exemplary embodiment, for example, the active pattern 130 may be disposed on the first substrate 110. In an exemplary embodiment, the active pattern 130 may include, for example, at least one of an oxide semiconductor, an inorganic semiconductor (e.g., amorphous silicon, polycrystalline silicon, etc.), an organic semiconductor, and the like.

[0124] The first insulating layer 150 may be disposed on the active pattern 130. The first insulating layer 150 may cover the active pattern 130 in the light emitting region II, and may extend in the first direction on the first substrate 110. That is, the first insulating layer 150 may be disposed on the entire first substrate 110. In an exemplary embodiment, the first insulating layer 150 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0125] The gate electrode 170 may be disposed on a portion of the first insulating layer 150 under which the active pattern 130 is disposed. In exemplary embodiments, the gate electrode 170 may include, for example, a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

[0126] The second insulating layer 190 may be disposed on the gate electrode 170. The second insulating layer 190 may cover the gate electrode 170 in the light emitting region II, and may extend in the first direction on the first substrate 110. That is, the second insulating layer 190 may be disposed on the entire first substrate 110. In an exemplary embodiment, the second insulating layer 190 may include, for example, a silicon compound, a metal oxide, or the like.

[0127] The source electrode 210 and the drain electrode 230 may be disposed on the second insulating layer 190. The source electrode 210 may contact the first side of the active layer 130 by removing a portion of the first insulating layer 150 and a portion of the second insulating layer 190. The drain electrode 230 may contact the second side of the active layer 130 by removing a second portion of the first insulating layer 150 and a second portion of the second insulating layer 190. In an exemplary embodiment, each of the source electrode 210 and the drain electrode 230 may include, for example, a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

[0128] The third insulating layer 270 may be disposed on the source electrode 210 and the drain electrode 230. The third insulating layer 270 may cover the source electrode 210 and the drain electrode 230 in the light emitting region II, and may extend in the first direction on the first substrate 110. That is, the third insulating layer 270 may be disposed on the entire first substrate 110. In an exemplary embodiment, the third insulating layer 270 may include, for example, a silicon compound, a metal oxide, or the like.

[0129] The lower electrode 290 may be disposed on the third insulating layer 270. By removing a portion of the third insulating layer 270, the lower electrode 290 may contact the drain electrode 230. In addition, the lower electrode 290 may be electrically connected to the semiconductor element 250. In an exemplary embodiment, the lower electrode 290 may include, for example, a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

[0130] The pixel defining layer 310 may be disposed on the third insulating layer 270 to expose a portion of the lower electrode 290. The pixel defining layer 310 may include an organic material or an inorganic material. In this case, the light emitting layer 330 may be disposed on the portion of the lower electrode 290 exposed by the pixel defining layer 310.

[0131] The light emitting layer 330 may be disposed on the exposed lower electrode 290. The light emitting layer 330 may be disposed using a light emitting material that generates light of different colors (eg, red light, blue light, and green light).

[0132] The upper electrode 340 may be disposed on the pixel defining layer 310 and the light emitting layer 330. The upper electrode 340 may cover the pixel defining layer 310 and the light emitting layer 330 in the light emitting region II and the reflective region III, and may extend along the first direction on the first substrate 110. That is, the upper electrode 340 may be electrically connected to the first pixel to the third pixel. In an exemplary embodiment, the upper electrode 340 may include, for example, a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These materials may be used alone or in combination.

[0133] The sensing pattern 390 may be disposed on the second substrate 350. The sensing pattern 390 may include a material having a predetermined reflectivity. In an exemplary embodiment, the sensing pattern 390 may include, for example, gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the sensing pattern 390 may include, for example, an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the sensing pattern 390 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x )wait.

[0134] The second substrate 350 and the first substrate 110 may include substantially the same material. In an exemplary embodiment, the second substrate 350 may include, for example, quartz, artificial quartz, calcium fluoride, fluorine-doped quartz, soda-lime glass, alkali-free glass, etc. In an exemplary embodiment, the second substrate 350 may include a transparent inorganic material or a flexible plastic. In an exemplary embodiment, the second substrate 350 may include, for example, a flexible transparent resin substrate. In this case, in order to increase the flexibility of the OLED device 100, the second substrate 350 may include a stacked structure in which at least one organic layer and at least one inorganic layer are alternately stacked.

[0135] The fourth insulating layer 385 is disposed on the sensing patterns 390. The fourth insulating layer 385 may include an adhesive material.

[0136] The reflective pattern 370 is disposed on the fourth insulating layer 385. The reflective pattern 370 may be disposed in the reflective region III.

[0137] The reflective pattern 370 may include a material having a predetermined reflectivity. In an exemplary embodiment, the reflective pattern 370 may include, for example, gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the reflective pattern 370 may include, for example, an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the reflective pattern 370 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x )wait.

[0138] Figures 3 to 10 It shows the manufacturing Figure 2 A cross-sectional view of a method of manufacturing an OLED device 100 is shown.

[0139] Reference Figure 3 A buffer layer 115 is disposed on the first substrate 110 . Then, an active pattern 130 and a first insulating layer 150 are disposed on the buffer layer 115 .

[0140] In an exemplary embodiment, the first substrate 110 may include, for example, quartz, artificial quartz, calcium fluoride, fluorine-doped quartz, soda-lime glass, alkali-free glass, or the like.

[0141] A buffer layer 115 may be disposed on the first substrate 110. The buffer layer 115 may extend from the light emitting region II into the reflective region III. The buffer layer 115 may prevent metal atoms and / or impurities from diffusing (e.g., outgassing) from the first substrate 110. In addition, the buffer layer 115 may control the heat transfer rate in a crystallization process for forming the active pattern 130, thereby obtaining a substantially uniform active pattern 130. In addition, the buffer layer 115 may improve the surface flatness of the first substrate 110 when the surface of the first substrate 110 is relatively irregular. Depending on the type of the first substrate 110, at least two buffer layers may be disposed on the first substrate 110, or no buffer layer may be disposed.

[0142] In exemplary embodiments, the active pattern 130 may include, for example, at least one of an oxide semiconductor, an inorganic semiconductor (eg, amorphous silicon, polycrystalline silicon, etc.), an organic semiconductor, and the like.

[0143] The first insulating layer 150 may be disposed on the active pattern 130. The first insulating layer 150 may cover the active pattern 130 in the light emitting region II, and may extend in the first direction on the first substrate 110. That is, the first insulating layer 150 may be disposed on the entire first substrate 110. In an exemplary embodiment, the first insulating layer 150 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0144] Reference Figure 4 , a gate electrode 170 and a second insulating layer 190 are disposed on the first substrate 110 on which the first insulating layer 150 is disposed.

[0145] The gate electrode 170 may be disposed on a portion of the first insulating layer 150 under which the active pattern 130 is disposed. In exemplary embodiments, the gate electrode 170 may include, for example, a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

[0146] A second insulating layer 190 may be disposed on the gate electrode 170. The second insulating layer 190 may cover the gate electrode 170 in the light emitting region II and may extend in the first direction on the first substrate 110. That is, the second insulating layer 190 may be disposed on the entire first substrate 110. In an exemplary embodiment, the second insulating layer 190 may include, for example, a silicon compound, a metal oxide, or the like.

[0147] Reference Figure 5 , a source electrode 210 and a drain electrode 230 are disposed on the first substrate 110 on which the second insulating layer 190 is disposed.

[0148] The source electrode 210 and the drain electrode 230 may be disposed on the second insulating layer 190. The source electrode 210 may contact the first side of the active layer 130 by removing a portion of the first insulating layer 150 and a portion of the second insulating layer 190. The drain electrode 230 may contact the second side of the active layer 130 by removing a second portion of the first insulating layer 150 and a second portion of the second insulating layer 190. In an exemplary embodiment, each of the source electrode 210 and the drain electrode 230 may include, for example, a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

[0149] Reference Figure 6 A third insulating layer 270 and a lower electrode 290 are disposed on the first substrate 110 on which the source electrode 210 and the drain electrode 230 are disposed.

[0150] A third insulating layer 270 may be disposed on the source electrode 210 and the drain electrode 230. The third insulating layer 270 may cover the source electrode 210 and the drain electrode 230 in the light emitting region II, and may extend in the first direction on the first substrate 110. That is, the third insulating layer 270 may be disposed on the entire first substrate 110. In an exemplary embodiment, the third insulating layer 270 may include, for example, a silicon compound, a metal oxide, or the like.

[0151] A lower electrode 290 may be disposed on the third insulating layer 270. By removing a portion of the third insulating layer 270, the lower electrode 290 may contact the drain electrode 230. In addition, the lower electrode 290 may be electrically connected to the semiconductor element 250. In an exemplary embodiment, the lower electrode 290 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0152] Reference Figure 7 , a pixel defining layer 310 , a light emitting layer 330 , and an upper electrode 340 are disposed on the first substrate 110 on which the lower electrode 290 is disposed.

[0153] A pixel defining layer 310 may be disposed on the third insulating layer 270 to expose a portion of the lower electrode 290. The pixel defining layer 310 may include an organic material or an inorganic material. In this case, a light emitting layer 330 may be disposed on a portion of the lower electrode 290 exposed by the pixel defining layer 310.

[0154] The light emitting layer 330 may be disposed on the exposed lower electrode 290. The light emitting layer 330 may be disposed with a light emitting material generating light of different colors (eg, red light, blue light, and green light).

[0155] An upper electrode 340 may be disposed on the pixel defining layer 310 and the light emitting layer 330. The upper electrode 340 may cover the pixel defining layer 310 and the light emitting layer 330 in the light emitting region II and the reflective region III, and may extend along the first direction on the first substrate 110. That is, the upper electrode 340 may be electrically connected to the first pixel to the third pixel. In an exemplary embodiment, the upper electrode 340 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These materials may be used alone or in combination.

[0156] Reference Figure 8 , a sensing pattern 390 is disposed on the second substrate 350 .

[0157] The sensing pattern 390 may be disposed on the first surface of the second substrate 350. The sensing pattern 390 may be disposed between the first substrate 110 and the second substrate 350. The sensing pattern 390 may be disposed in the light emitting region II and the reflective region III.

[0158] The sensing pattern 390 may include a material having a predetermined reflectivity. In an exemplary embodiment, the sensing pattern 390 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the sensing pattern 390 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the sensing pattern 390 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0159] The second substrate 350 and the first substrate 110 may include substantially the same material. In an exemplary embodiment, the second substrate 350 may include, for example, at least one of quartz, artificial quartz, calcium fluoride, fluorine-doped quartz, soda-lime glass, alkali-free glass, and the like.

[0160] Reference Fig. 9 , a fourth insulating layer 385 is disposed on the second substrate 350 on which the sensing pattern 390 is disposed.

[0161] The fourth insulating layer 385 may prevent oxidation of the sensing pattern 390. The fourth insulating layer 385 may include an adhesive material. The fourth insulating layer 385 may prevent the reflection pattern 370 and the sensing pattern 390 from being separated from the second substrate 350. The fourth insulating layer 385 may insulate between the reflection pattern 370 and the sensing pattern 390.

[0162] Reference Fig.10 , a reflective pattern 370 is disposed on the fourth insulating layer 385 .

[0163] A reflective pattern 370 may be disposed in the reflective region III.

[0164] The reflective pattern 370 may include a material having a predetermined reflectivity. In an exemplary embodiment, the reflective pattern 370 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the reflective pattern 370 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the reflective pattern 370 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0165] Fig.11 It is shown Figure 2 Plan view of the reflection pattern. Fig.12 It is shown Figure 2 A plan view of the sensing pattern. Fig.13 It is shown Fig.11 The reflection pattern and Fig.12 A plan view of the sensing pattern.

[0166] Reference Figure 2 and Figures 11 to 13 , a reflection pattern 370 and a sensing pattern 390 are shown.

[0167] The reflection pattern 370 is disposed only in the reflection region III. Therefore, the reflection pattern 370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflection pattern 370 is disposed as one pattern.

[0168] The sensing pattern 390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 390 may be electrically connected to a sensing driver (not shown) through a connecting line 395. The connecting line 395 may include the same material as that of the sensing pattern 390. The connecting line 395 may be disposed on the same layer as the sensing pattern 390. However, the present invention is not limited thereto, and the connecting line 395 may include a material different from that of the sensing pattern 390.

[0169] The sensing pattern 390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 390 around the touch position is changed. Therefore, a touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0170] The sensing pattern 390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 390 may have an appropriate size according to the size of the display device.

[0171] Fig.14 It is shown Figure 2 Plan view of the reflection pattern. Fig.15 It is shown Figure 2 A plan view of the sensing pattern. Fig.16 It is shown Fig.14 The reflection pattern and Fig.15 A plan view of the sensing pattern.

[0172] Reference Figure 2 and Figures 14 to 16 , a reflection pattern 370 and a sensing pattern 390 are shown.

[0173] The reflective pattern 370 is only disposed in the reflective region III. Therefore, the reflective pattern 370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 370 may be used as a sensing electrode of a self-capacitive touch screen panel. The reflective pattern 370 may have a size corresponding to a predetermined number of unit pixels Px. The reflective pattern 370 may have an appropriate size according to the size of the display device.

[0174] The reflective pattern 370 may be electrically connected to a sensing driver (not shown) through a first connection line 375. The first connection line 375 may include the same material as that of the reflective pattern 370. The first connection line 375 may be disposed on the same layer as the reflective pattern 370. However, the present invention is not limited thereto, and the first connection line 375 may include a material different from that of the reflective pattern 370.

[0175] The sensing pattern 390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 390 may be electrically connected to a sensing driver (not shown) through a second connection line 395. The second connection line 395 may include the same material as that of the sensing pattern 390. The second connection line 395 may be disposed on the same layer as the sensing pattern 390. However, the present invention is not limited thereto, and the second connection line 395 may include a material different from that of the sensing pattern 390.

[0176] The sensing pattern 390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 390 around the touch position is changed. Therefore, a touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0177] The sensing pattern 390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 390 may have an appropriate size according to the size of the display device.

[0178] In the illustrated exemplary embodiment, the size of the reflection pattern 370 may be greater than that of the sensing pattern 390. In the exemplary embodiment, for example, the reflection pattern 370 may have a size corresponding to four sensing patterns 390. However, the present invention is not limited thereto, and the reflection pattern 370 may have various sizes.

[0179] Since the reflective pattern 370 is set to a large area, the reflective pattern 370 can detect a touch position in a wide range (e.g., a range corresponding to the area of ​​the reflective pattern 370). Therefore, the reflective pattern 370 senses a touch position in a wide range, and after the reflective pattern 370 senses the touch position, the sensing pattern 390 senses a precise touch position. Therefore, high-speed driving of the touch screen panel can be performed.

[0180] Fig.17 It is shown Figure 2 Plan view of the reflection pattern. Fig.18 It is shown Figure 2 A plan view of the sensing pattern. Fig.19 It is shown Fig.17 The reflection pattern and Fig.18 A plan view of the sensing pattern.

[0181] Reference Figure 2 and Figures 17 to 19 , a reflection pattern 370 and a sensing pattern 390 are shown.

[0182] The reflection pattern 370 is disposed only in the reflection region III. Therefore, the reflection pattern 370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflection pattern 370 is disposed as one pattern.

[0183] The sensing pattern 390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 390 may be electrically connected to the sensing driver 600 through a connecting line 395. The connecting line 395 may include the same material as that of the sensing pattern 390. The connecting line 395 may be disposed on the same layer as the sensing pattern 390. However, the present invention is not limited thereto, and the connecting line 395 may include a material different from that of the sensing pattern 390.

[0184] The sensing pattern 390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 390 around the touch position is changed. Therefore, a touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0185] The sensing pattern 390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 390 may have an appropriate size according to the size of the display device.

[0186] In the exemplary embodiment shown, the sensing patterns 390 are classified into a plurality of sensing groups including a predetermined number of sensing patterns. In the exemplary embodiment, for example, the sensing patterns of group A are electrically connected to the first group driver 510, and the sensing patterns of group B are electrically connected to the second group driver 520. The first group driver 510 and the second group driver 520 are electrically connected to the sensing driver 600.

[0187] When a touch signal is applied to the sensing pattern 390, the sensing group to which the touch signal is applied is detected, and a precise touch position in the sensing group to which the touch signal is applied is detected. Therefore, high-speed driving of the touch screen panel can be performed.

[0188] Fig. 20 It is shown Figure 2 Plan view of the reflection pattern. Fig.21 It is shown Figure 2 A plan view of the sensing pattern. Fig. 22 It is shown Fig. 20 The reflection pattern and Fig.21 A plan view of the sensing pattern.

[0189] Reference Figure 2 and Figure 20 to Figure 22 , a reflection pattern 370 and a sensing pattern 390 are shown.

[0190] The reflective pattern 370 is disposed only in the reflective region III. Therefore, the reflective pattern 370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 370 may be electrically connected to the sensing driver 600 through the first connection line 375. The first connection line 375 may include the same material as that of the reflective pattern 370. The first connection line 375 may be disposed on the same layer as the reflective pattern 370. However, the present invention is not limited thereto, and the first connection line 375 may include a material different from that of the reflective pattern 370.

[0191] The sensing pattern 390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 390 may be electrically connected to the sensing driver 600 through the second connection line 395. The second connection line 395 may include the same material as the sensing pattern 390. The second connection line 395 may be disposed on the same layer as the sensing pattern 390. However, the present invention is not limited thereto, and the second connection line 395 may include a material different from the sensing pattern 390.

[0192] The sensing pattern 390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 390 around the touch position is changed. Therefore, a touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0193] The sensing pattern 390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 390 may have an appropriate size according to the size of the display device.

[0194] In the exemplary embodiment shown, the sensing patterns 390 are classified into a plurality of sensing groups including a predetermined number of sensing patterns. In the exemplary embodiment, for example, the sensing patterns of group A are electrically connected to the first group driver 510, and the sensing patterns of group B are electrically connected to the second group driver 520. The first group driver 510 and the second group driver 520 are electrically connected to the sensing driver 600.

[0195] When a touch signal is applied to the sensing pattern 390, the sensing group to which the touch signal is applied is detected, and a precise touch position in the sensing group to which the touch signal is applied is detected. Therefore, high-speed driving of the touch screen panel can be performed.

[0196] When a touch signal is applied to the sensing pattern 390, a potential difference occurs between the sensing pattern 390 and the reflective pattern 370. Therefore, capacitance occurs between the sensing pattern 390 and the reflective pattern 370, so that touch sensitivity decreases due to the capacitance between the sensing pattern 390 and the reflective pattern 370.

[0197] However, in the illustrated exemplary embodiment, when a touch signal is applied to the sensing pattern 390, a signal identical to the touch signal is applied to the reflective pattern 370. Therefore, there is no potential difference between the sensing pattern 390 and the reflective pattern 370. Therefore, there is no capacitance between the sensing pattern 390 and the reflective pattern 370, so that a decrease in touch sensitivity can be prevented.

[0198] Fig.23 It is shown Figure 2 Plan view of the reflection pattern. Fig.24 It is shown Figure 2 A plan view of the sensing pattern. Fig.25 It is shown Fig.23 The reflection pattern and Fig.24 A plan view of the sensing pattern.

[0199] Reference Figure 2 and Figure 23 to Figure 25 , a reflection pattern 370 and a sensing pattern 390 are shown.

[0200] The reflective pattern 370 is disposed only in the reflective region III. Therefore, the reflective pattern 370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 370 may be electrically connected to the sensing driver 600 through the first connection line 375. The first connection line 375 may include the same material as that of the reflective pattern 370. The first connection line 375 may be disposed on the same layer as the reflective pattern 370. However, the present invention is not limited thereto, and the first connection line 375 may include a material different from that of the reflective pattern 370.

[0201] The sensing pattern 390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 390 may be electrically connected to the sensing driver 600 through the second connection line 395. The second connection line 395 may include the same material as the sensing pattern 390. The second connection line 395 may be disposed on the same layer as the sensing pattern 390. However, the present invention is not limited thereto, and the second connection line 395 may include a material different from the sensing pattern 390.

[0202] The sensing pattern 390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, when the electrical conductor is contacted, the capacitance of the sensing pattern 390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0203] The sensing pattern 390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 390 may have an appropriate size according to the size of the display device.

[0204] In the illustrated exemplary embodiment, the sensing patterns 390 are classified into a plurality of sensing groups including a predetermined number of sensing patterns. In the exemplary embodiment, for example, the sensing patterns of group A are electrically connected to the first group driver 510, and the sensing patterns of group B are electrically connected to the second group driver 520. The first group driver 510 and the second group driver 520 are electrically connected to the sensing driver 600.

[0205] When a touch signal is applied to the sensing pattern 390, the sensing group to which the touch signal is applied is detected, and a precise touch position in the sensing group to which the touch signal is applied is detected. Therefore, high-speed driving of the touch screen panel can be performed.

[0206] In the illustrated exemplary embodiment, the reflective pattern 370 is provided to have a size corresponding to one set of sensing patterns 390. In the exemplary embodiment, the reflective pattern 370 may have a size corresponding to, for example, eight sensing patterns 390. However, the present invention is not limited thereto, and the reflective pattern 370 may have various sizes.

[0207] When a touch signal is applied to the sensing pattern 390, a potential difference occurs between the sensing pattern 390 and the reflective pattern 370. Therefore, capacitance occurs between the sensing pattern 390 and the reflective pattern 370, so that touch sensitivity decreases due to the capacitance between the sensing pattern 390 and the reflective pattern 370.

[0208] However, in the illustrated exemplary embodiment, when a touch signal is applied to the sensing pattern 390, a signal identical to the touch signal is applied to the reflective pattern 370. Therefore, there is no potential difference between the sensing pattern 390 and the reflective pattern 370. Therefore, there is no capacitance between the sensing pattern 390 and the reflective pattern 370, so that a decrease in touch sensitivity can be prevented.

[0209] Fig.26 is a plan view showing an OLED device according to an exemplary embodiment of the present invention. Fig. 27 It is along Fig.26 A cross-sectional view taken along line IV-IV'.

[0210] In addition to the conductive adhesive member 1400, the OLED device according to the illustrated exemplary embodiment is Figure 1 and Figure 2 The OLED devices are substantially the same and thus like reference numerals are used for the same elements and repeated explanation will be omitted.

[0211] Reference Fig.26 and Fig. 27 , the reflective pattern 1370 disposed on the second substrate 1350 is electrically connected to the conductive adhesive member 1400. The conductive adhesive member 1400 may be electrically connected to a pad (not shown) disposed on the first substrate 1110.

[0212] The conductive adhesive member 1400 may include a conductive material. The reflective pattern 1370 may be electrically connected to a pad (not shown) disposed on the first substrate 1110 through the conductive adhesive member 1400. Therefore, an additional flexible printed circuit board ("FPCB") is not required.

[0213] The sensing pattern 1390 can be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when contacting an electrical conductor, the capacitance of the sensing pattern 1390 around the touch position is changed. Therefore, the touch panel sensor (not shown) can determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance. However, the present invention is not limited to this, and the reflective pattern 1370 can be used as a sensing electrode of a self-capacitive touch screen panel. In addition, both the reflective pattern 1370 and the sensing pattern 1390 can be used as a sensing electrode of a self-capacitive touch screen panel.

[0214] Figure 28 to Figure 35 It shows the manufacturing Fig. 27 A cross-sectional view of a method for manufacturing an OLED device.

[0215] Reference Fig.28 A buffer layer 1115 is disposed on the first substrate 1110. Then, an active pattern 1130 and a first insulating layer 1150 are disposed on the buffer layer 1115.

[0216] In an exemplary embodiment, the first substrate 1110 may include, for example, at least one of quartz, artificial quartz, calcium fluoride, fluorine-doped quartz, soda-lime glass, alkali-free glass, and the like.

[0217] A buffer layer 1115 may be disposed on the first substrate 1110. The buffer layer 1115 may extend from the light emitting region II into the reflective region III. The buffer layer 1115 may prevent metal atoms and / or impurities from diffusing (e.g., outgassing) from the first substrate 1110. In addition, the buffer layer 1115 may control the heat transfer rate in a crystallization process for forming the active pattern 1130, thereby obtaining a substantially uniform active pattern 1130. In addition, the buffer layer 1115 may improve the surface flatness of the first substrate 1110 when the surface of the first substrate 1110 is relatively irregular. Depending on the type of the first substrate 1110, at least two buffer layers may be disposed on the first substrate 1110, or no buffer layer may be disposed.

[0218] In exemplary embodiments, the active pattern 1130 may include, for example, at least one of an oxide semiconductor, an inorganic semiconductor (eg, amorphous silicon, polysilicon, etc.), an organic semiconductor, or the like.

[0219] A first insulating layer 1150 may be disposed on the active pattern 1130. The first insulating layer 1150 may cover the active pattern 1130 in the light emitting region II, and may extend along the first direction on the first substrate 1110. That is, the first insulating layer 1150 may be disposed on the entire first substrate 1110. In an exemplary embodiment, the first insulating layer 1150 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0220] Reference Fig.29 , a gate electrode 1170 and a second insulating layer 1190 are disposed on a first substrate 1110 on which a first insulating layer 1150 is disposed.

[0221] The gate electrode 1170 may be disposed on a portion of the first insulating layer 1150 under which the active pattern 1130 is disposed. In exemplary embodiments, the gate electrode 1170 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0222] A second insulating layer 1190 may be disposed on the gate electrode 1170. The second insulating layer 1190 may cover the gate electrode 1170 in the light emitting region II, and may extend along the first direction on the first substrate 1110. That is, the second insulating layer 1190 may be disposed on the entire first substrate 1110. In an exemplary embodiment, the second insulating layer 1190 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0223] Reference Fig.30 , a source electrode 1210 and a drain electrode 1230 are disposed on a first substrate 1110 on which a second insulating layer 1190 is disposed.

[0224] A source electrode 1210 and a drain electrode 1230 may be disposed on the second insulating layer 1190. The source electrode 1210 may contact a first side of the active layer 1130 by removing a portion of the first insulating layer 1150 and a portion of the second insulating layer 1190. The drain electrode 1230 may contact a second side of the active layer 1130 by removing a second portion of the first insulating layer 1150 and a second portion of the second insulating layer 1190. In an exemplary embodiment, each of the source electrode 1210 and the drain electrode 1230 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0225] Reference Fig.31 , a third insulating layer 1270 and a lower electrode 1290 are disposed on the first substrate 1110 on which the source electrode 1210 and the drain electrode 1230 are disposed.

[0226] A third insulating layer 1270 may be disposed on the source electrode 1210 and the drain electrode 1230. The third insulating layer 1270 may cover the source electrode 1210 and the drain electrode 1230 in the light emitting region II, and may extend along the first direction on the first substrate 1110. That is, the third insulating layer 1270 may be disposed on the entire first substrate 1110. In an exemplary embodiment, the third insulating layer 1270 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0227] A lower electrode 1290 may be disposed on the third insulating layer 1270. By removing a portion of the third insulating layer 1270, the lower electrode 1290 may contact the drain electrode 1230. In addition, the lower electrode 1290 may be electrically connected to the semiconductor element 1250. In an exemplary embodiment, the lower electrode 1290 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0228] Reference Fig.32 , a pixel defining layer 1310 , a light emitting layer 1330 , and an upper electrode 1340 are disposed on the first substrate 1110 on which the lower electrode 1290 is disposed.

[0229] A pixel defining layer 1310 may be disposed on the third insulating layer 1270 to expose a portion of the lower electrode 1290. The pixel defining layer 1310 may include an organic material or an inorganic material. In this case, a light emitting layer 1330 may be disposed on a portion of the lower electrode 1290 exposed by the pixel defining layer 1310.

[0230] The light emitting layer 1330 may be disposed on the exposed lower electrode 1290. The light emitting layer 1330 may be disposed with a light emitting material generating light of different colors (eg, red light, blue light, and green light).

[0231] An upper electrode 1340 may be disposed on the pixel defining layer 1310 and the light emitting layer 1330. The upper electrode 1340 may cover the pixel defining layer 1310 and the light emitting layer 1330 in the light emitting region II and the reflective region III, and may extend along the first direction on the first substrate 1110. That is, the upper electrode 1340 may be electrically connected to the first pixel to the third pixel. In an exemplary embodiment, the upper electrode 1340 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These materials may be used alone or in combination.

[0232] Reference Fig.33 , a sensing pattern 1390 is disposed on the second substrate 1350 .

[0233] The sensing pattern 1390 may be disposed on the first surface of the second substrate 1350. The sensing pattern 1390 may be disposed between the first substrate 1110 and the second substrate 1350. The sensing pattern 1390 may be disposed in the light emitting region II and the reflective region III.

[0234] The sensing pattern 1390 may include a material having a predetermined reflectivity. In an exemplary embodiment, the sensing pattern 1390 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the sensing pattern 1390 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the sensing pattern 1390 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0235] The second substrate 1350 and the first substrate 1110 may include substantially the same material. In an exemplary embodiment, the second substrate 1350 may include, for example, at least one of quartz, artificial quartz, calcium fluoride, fluorine-doped quartz, soda-lime glass, alkali-free glass, and the like.

[0236] Reference Fig.34 , a fourth insulating layer 1385 is disposed on the second substrate 1350 on which the sensing pattern 1390 is disposed.

[0237] The fourth insulating layer 1385 may prevent oxidation of the sensing pattern 1390. The fourth insulating layer 1385 may include an adhesive material. The fourth insulating layer 1385 may prevent the reflection pattern 1370 and the sensing pattern 1390 from being separated from the second substrate 1350. The fourth insulating layer 1385 may insulate between the reflection pattern 1370 and the sensing pattern 1390.

[0238] Reference Fig.35 , a reflective pattern 1370 is disposed on the fourth insulating layer 1385 .

[0239] A reflective pattern 1370 may be disposed in the reflective region III.

[0240] The reflective pattern 1370 may include a material having a predetermined reflectivity. In an exemplary embodiment, the reflective pattern 1370 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the reflective pattern 1370 may include at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the reflective pattern 1370 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0241] Reference Fig. 27 , the reflective pattern 1370 is connected to the first substrate 1110 using a conductive adhesive member 1400 .

[0242] The conductive adhesive member 1400 may include a conductive material. The reflective pattern 1370 may be electrically connected to a pad (not shown) disposed on the first substrate 1110 through the conductive adhesive member 1400. Therefore, an additional FPCB is not required.

[0243] Fig.36 It is shown Fig. 27 Plan view of the reflection pattern. Fig.37 It is shown Fig. 27 A plan view of the sensing pattern. Fig.38 It is shown Fig.36 The reflection pattern and Fig.37 A plan view of the sensing pattern.

[0244] Reference Fig. 27 and Figure 36 to Figure 38 , a reflection pattern 1370 and a sensing pattern 1390 are shown.

[0245] The reflective pattern 1370 is disposed only in the reflective region III. Therefore, the reflective pattern 1370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 1370 may be used as a sensing electrode of a self-capacitive touch screen panel. The reflective pattern 1370 may have a size corresponding to a predetermined number of unit pixels Px. The reflective pattern 1370 may have an appropriate size according to the size of the display device.

[0246] The reflective pattern 1370 may be electrically connected to a sensing driver (not shown) through a first connection line 1375. The first connection line 1375 may include the same material as that of the reflective pattern 1370. The first connection line 1375 may be disposed on the same layer as the reflective pattern 1370. However, the present invention is not limited thereto, and the first connection line 1375 may include a material different from that of the reflective pattern 1370.

[0247] The reflective pattern 1370 disposed on the second substrate 1350 is electrically connected to the conductive adhesive member 1400. The conductive adhesive member 1400 may be electrically connected to a pad (not shown) disposed on the first substrate 1110.

[0248] The sensing pattern 1390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 1390 may be electrically connected to a sensing driver (not shown) through a second connection line 1395. The second connection line 1395 may include the same material as that of the sensing pattern 1390. The second connection line 1395 may be disposed on the same layer as the sensing pattern 1390. However, the present invention is not limited thereto, and the second connection line 1395 may include a material different from that of the sensing pattern 1390.

[0249] The sensing pattern 1390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 1390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0250] The sensing pattern 1390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 1390 may have an appropriate size according to the size of the display device.

[0251] In the illustrated exemplary embodiment, the size of the reflection pattern 1370 may be greater than that of the sensing pattern 1390. In an exemplary embodiment, for example, the reflection pattern 1370 may have a size corresponding to four sensing patterns 1390. However, the present invention is not limited thereto, and the reflection pattern 1370 may have various sizes.

[0252] Since the reflective pattern 1370 is set to a large area, the reflective pattern 1370 can detect a wide range of touch positions. Therefore, the reflective pattern 1370 senses a wide range of touch positions, and after the reflective pattern 1370 senses the touch position, the sensing pattern 1390 senses a precise touch position. Therefore, high-speed driving of the touch screen panel can be performed.

[0253] Fig.39 It is shown Fig. 27 Plan view of the reflection pattern. Fig.40 It is shown Fig. 27 A plan view of the sensing pattern. Fig.41 It is shown Fig.39 The reflection pattern and Fig.40 A plan view of the sensing pattern.

[0254] Reference Fig. 27 and Figure 39 to Figure 41 , a reflection pattern 1370 and a sensing pattern 1390 are shown.

[0255] The reflective pattern 1370 is disposed only in the reflective region III. Therefore, the reflective pattern 1370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 1370 may be electrically connected to the sensing driver 1600 through the first connection line 1375. The first connection line 1375 may include the same material as that of the reflective pattern 1370. The first connection line 1375 may be disposed on the same layer as the reflective pattern 1370. However, the present invention is not limited thereto, and the first connection line 1375 may include a material different from that of the reflective pattern 1370.

[0256] The reflective pattern 1370 disposed on the second substrate 1350 is electrically connected to the conductive adhesive member 1400. The conductive adhesive member 1400 may be electrically connected to a pad (not shown) disposed on the first substrate 1110.

[0257] The sensing pattern 1390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 1390 may be electrically connected to the sensing driver 1600 through the second connection line 1395. The second connection line 1395 may include the same material as the sensing pattern 1390. The second connection line 1395 may be disposed on the same layer as the sensing pattern 1390. However, the present invention is not limited thereto, and the second connection line 1395 may include a material different from the sensing pattern 1390.

[0258] The sensing pattern 1390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 1390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0259] The sensing pattern 1390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 1390 may have an appropriate size according to the size of the display device.

[0260] In the illustrated exemplary embodiment, the sensing patterns 1390 are classified into a plurality of sensing groups including a predetermined number of sensing patterns. In the exemplary embodiment, for example, the sensing patterns of group A are electrically connected to the first group driver 1510, and the sensing patterns of group B are electrically connected to the second group driver 1520. The first group driver 1510 and the second group driver 1520 are electrically connected to the sensing driver 1600.

[0261] When a touch signal is applied to the sensing pattern 1390, the sensing group to which the touch signal is applied is detected, and a precise touch position in the sensing group to which the touch signal is applied is detected. Therefore, high-speed driving of the touch screen panel can be performed.

[0262] When a touch signal is applied to the sensing pattern 1390, a potential difference occurs between the sensing pattern 1390 and the reflective pattern 1370. Therefore, capacitance occurs between the sensing pattern 1390 and the reflective pattern 1370, so that touch sensitivity decreases due to the capacitance between the sensing pattern 1390 and the reflective pattern 1370.

[0263] However, in the illustrated exemplary embodiment, when a touch signal is applied to the sensing pattern 1390, a signal identical to the touch signal is applied to the reflective pattern 1370. Therefore, there is no potential difference between the sensing pattern 1390 and the reflective pattern 1370. Therefore, there is no capacitance between the sensing pattern 1390 and the reflective pattern 1370, thereby preventing a decrease in touch sensitivity.

[0264] Fig.42 It is shown Fig. 27 Plan view of the reflection pattern. Fig.43 It is shown Fig. 27 A plan view of the sensing pattern. Fig.44 It is shown Fig.42 The reflection pattern and Fig.43 A plan view of the sensing pattern.

[0265] Reference Fig. 27 and Figure 42 to Figure 44 , a reflection pattern 1370 and a sensing pattern 1390 are shown.

[0266] The reflective pattern 1370 is disposed only in the reflective region III. Therefore, the reflective pattern 1370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 1370 may be electrically connected to the sensing driver 1600 through the first connection line 1375. The first connection line 1375 may include the same material as that of the reflective pattern 1370. The first connection line 1375 may be disposed on the same layer as the reflective pattern 1370. However, the present invention is not limited thereto, and the first connection line 1375 may include a material different from that of the reflective pattern 1370.

[0267] The reflective pattern 1370 disposed on the second substrate 1350 is electrically connected to the conductive adhesive member 1400. The conductive adhesive member 1400 may be electrically connected to a pad (not shown) disposed on the first substrate 1110.

[0268] The sensing pattern 1390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 1390 may be electrically connected to the sensing driver 1600 through the second connection line 1395. The second connection line 1395 may include the same material as the sensing pattern 1390. The second connection line 1395 may be disposed on the same layer as the sensing pattern 1390. However, the present invention is not limited thereto, and the second connection line 1395 may include a material different from the sensing pattern 1390.

[0269] The sensing pattern 1390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 1390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0270] The sensing pattern 1390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 1390 may have an appropriate size according to the size of the display device.

[0271] In the illustrated exemplary embodiment, the sensing patterns 1390 are classified into a plurality of sensing groups including a predetermined number of sensing patterns. In the exemplary embodiment, for example, the sensing patterns of group A are electrically connected to the first group driver 1510, and the sensing patterns of group B are electrically connected to the second group driver 1520. The first group driver 1510 and the second group driver 1520 are electrically connected to the sensing driver 1600.

[0272] When a touch signal is applied to the sensing pattern 1390, the sensing group to which the touch signal is applied is detected, and a precise touch position in the sensing group to which the touch signal is applied is detected. Therefore, high-speed driving of the touch screen panel can be performed.

[0273] In an exemplary embodiment, the reflective pattern 1370 is provided to have a size corresponding to one set of sensing patterns 1390. In an exemplary embodiment, the reflective pattern 1370 may have, for example, a size corresponding to eight sensing patterns 1390. However, the present invention is not limited thereto, and the reflective pattern 1370 may have various sizes.

[0274] When a touch signal is applied to the sensing pattern 1390, a potential difference occurs between the sensing pattern 1390 and the reflective pattern 1370. Therefore, capacitance occurs between the sensing pattern 1390 and the reflective pattern 1370, so that touch sensitivity decreases due to the capacitance between the sensing pattern 1390 and the reflective pattern 1370.

[0275] However, in the illustrated exemplary embodiment, when a touch signal is applied to the sensing pattern 1390, a signal identical to the touch signal is applied to the reflective pattern 1370. Therefore, there is no potential difference between the sensing pattern 1390 and the reflective pattern 1370. Therefore, there is no capacitance between the sensing pattern 1390 and the reflective pattern 1370, thereby preventing a decrease in touch sensitivity.

[0276] Fig.45 is a plan view showing an OLED device according to an exemplary embodiment of the present invention. Fig.46 It is along Fig.45 A cross-sectional view taken along line V-V'.

[0277] In addition to the reflective pattern 2370 and the contact hole CNT, the OLED device according to the illustrated exemplary embodiment is Figure 1 and Figure 2 The OLED devices are substantially the same and thus like reference numerals are used for the same elements and repeated explanation will be omitted.

[0278] Reference Fig.45 and Fig.46 , a contact hole CNT is provided in the fourth insulating layer 2385. The reflective pattern 2370 is electrically connected to the sensing pattern 2390 through the contact hole CNT.

[0279] The sensing pattern 2390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 2390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0280] In a plan view, the reflective pattern 2370 is set to a similar size as the sensing pattern 2390. The reflective pattern 2370 is electrically connected to the sensing pattern 2390 through the contact hole CNT. Therefore, the sensing electrode of the self-capacitive type touch screen panel can have a low resistance.

[0281] Figures 47 to 54 It shows the manufacturing Fig.46 A cross-sectional view of a method for manufacturing an OLED device.

[0282] Reference Fig.47A buffer layer 2115 is disposed on the first substrate 2110. Then, an active pattern 2130 and a first insulating layer 2150 are disposed on the buffer layer 2115.

[0283] In an exemplary embodiment, the first substrate 2110 may include, for example, at least one of quartz, artificial quartz, calcium fluoride, fluorine-doped quartz, soda-lime glass, alkali-free glass, and the like.

[0284] A buffer layer 2115 may be disposed on the first substrate 2110. The buffer layer 2115 may extend from the light emitting region II into the reflective region III. The buffer layer 2115 may prevent metal atoms and / or impurities from diffusing (e.g., outgassing) from the first substrate 2110. In addition, the buffer layer 2115 may control the heat transfer rate in a crystallization process for forming the active pattern 2130, thereby obtaining a substantially uniform active pattern 2130. In addition, the buffer layer 2115 may improve the surface flatness of the first substrate 2110 when the surface of the first substrate 2110 is relatively irregular. Depending on the type of the first substrate 2110, at least two buffer layers may be disposed on the first substrate 2110, or no buffer layer may be disposed.

[0285] In exemplary embodiments, the active pattern 2130 may include, for example, at least one of an oxide semiconductor, an inorganic semiconductor (eg, amorphous silicon, polysilicon, etc.), an organic semiconductor, or the like.

[0286] A first insulating layer 2150 may be disposed on the active pattern 2130. The first insulating layer 2150 may cover the active pattern 2130 in the light emitting region II, and may extend along the first direction on the first substrate 2110. That is, the first insulating layer 2150 may be disposed on the entire first substrate 2110. In an exemplary embodiment, the first insulating layer 2150 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0287] Reference Fig.48 , a gate electrode 2170 and a second insulating layer 2190 are disposed on a first substrate 2110 on which a first insulating layer 2150 is disposed.

[0288] The gate electrode 2170 may be disposed on a portion of the first insulating layer 2150 under which the active pattern 2130 is disposed. In exemplary embodiments, the gate electrode 2170 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0289] A second insulating layer 2190 may be disposed on the gate electrode 2170. The second insulating layer 2190 may cover the gate electrode 2170 in the light emitting region II and may extend along the first direction on the first substrate 2110. That is, the second insulating layer 2190 may be disposed on the entire first substrate 2110. In an exemplary embodiment, the second insulating layer 2190 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0290] Reference Fig.49 , a source electrode 2210 and a drain electrode 2230 are disposed on a first substrate 2110 on which a second insulating layer 2190 is disposed.

[0291] A source electrode 2210 and a drain electrode 2230 may be disposed on the second insulating layer 2190. The source electrode 2210 may contact a first side of the active layer 2130 by removing a portion of the first insulating layer 2150 and a portion of the second insulating layer 2190. The drain electrode 2230 may contact a second side of the active layer 2130 by removing a second portion of the first insulating layer 2150 and a second portion of the second insulating layer 2190. In an exemplary embodiment, each of the source electrode 2210 and the drain electrode 2230 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0292] Reference Fig.50 , a third insulating layer 2270 and a lower electrode 2290 are disposed on the first substrate 2110 on which the source electrode 2210 and the drain electrode 2230 are disposed.

[0293] A third insulating layer 2270 may be disposed on the source electrode 2210 and the drain electrode 2230. The third insulating layer 2270 may cover the source electrode 2210 and the drain electrode 2230 in the light emitting region II, and may extend along the first direction on the first substrate 2110. That is, the third insulating layer 2270 may be disposed on the entire first substrate 2110. In an exemplary embodiment, the third insulating layer 2270 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0294] A lower electrode 2290 may be disposed on the third insulating layer 2270. By removing a portion of the third insulating layer 2270, the lower electrode 2290 may contact the drain electrode 2230. In addition, the lower electrode 2290 may be electrically connected to the semiconductor element 2250. In an exemplary embodiment, the lower electrode 2290 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0295] Reference Fig.51A pixel defining layer 2310, a light emitting layer 2330 and an upper electrode 2340 are disposed on the first substrate 2110 on which the lower electrode 2290 is disposed.

[0296] A pixel defining layer 2310 may be disposed on the third insulating layer 2270 to expose a portion of the lower electrode 2290. The pixel defining layer 2310 may include an organic material or an inorganic material. In this case, a light emitting layer 2330 may be disposed on a portion of the lower electrode 2290 exposed by the pixel defining layer 2310.

[0297] The light emitting layer 2330 may be disposed on the exposed lower electrode 2290. The light emitting layer 2330 may be disposed using a light emitting material that generates light of different colors (eg, red light, blue light, and green light).

[0298] An upper electrode 2340 may be disposed on the pixel defining layer 2310 and the light emitting layer 2330. The upper electrode 2340 may cover the pixel defining layer 2310 and the light emitting layer 2330 in the light emitting region II and the reflective region III, and may extend along the first direction on the first substrate 2110. That is, the upper electrode 2340 may be electrically connected to the first pixel to the third pixel. In an exemplary embodiment, the upper electrode 2340 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These materials may be used alone or in combination.

[0299] Reference Fig.52 , a sensing pattern 2390 is disposed on the second substrate 2350 .

[0300] The sensing pattern 2390 may be disposed on the first surface of the second substrate 2350. The sensing pattern 2390 may be disposed between the first substrate 2110 and the second substrate 2350. The sensing pattern 2390 may be disposed in the light emitting region II and the reflective region III.

[0301] The sensing pattern 2390 may include a material having a predetermined reflectivity. In an exemplary embodiment, the sensing pattern 2390 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the sensing pattern 2390 may include at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the sensing pattern 2390 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaNx ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0302] The second substrate 2350 and the first substrate 2110 may include substantially the same material. In an exemplary embodiment, the second substrate 2350 may include, for example, at least one of quartz, artificial quartz, calcium fluoride, fluorine-doped quartz, soda-lime glass, alkali-free glass, and the like.

[0303] Reference Fig.53 , a fourth insulating layer 2385 is disposed on the second substrate 2350 on which the sensing pattern 2390 is disposed. Then, the fourth insulating layer 2385 is patterned to define the contact hole CNT.

[0304] The fourth insulating layer 2385 may prevent oxidation of the sensing pattern 2390. The fourth insulating layer 2385 may include an adhesive material. The fourth insulating layer 2385 may prevent the reflection pattern 2370 and the sensing pattern 2390 from being separated from the second substrate 2350. The fourth insulating layer 2385 may insulate between the reflection pattern 2370 and the sensing pattern 2390.

[0305] Reference Fig.54 , a reflective pattern 2370 is disposed on the fourth insulating layer 2385 in which the contact hole CNT is defined.

[0306] A reflective pattern 2370 may be disposed in the reflective region III. The reflective pattern 2370 is electrically connected to the sensing pattern 2390 through the contact hole CNT. Therefore, the sensing electrode of the self-capacitive type touch screen panel may have low resistance.

[0307] The reflective pattern 2370 may include a material having a predetermined reflectivity. In an exemplary embodiment, the reflective pattern 2370 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the reflective pattern 2370 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the reflective pattern 2370 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnOx ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0308] Fig.55 It is shown Fig.46 Plan view of the reflection pattern. Fig.56 It is shown Fig.46 A plan view of the sensing pattern. Fig.57 It is shown Fig.55 The reflection pattern and Fig.56 A plan view of the sensing pattern.

[0309] Reference Fig.46 and Figure 55 to Figure 57 , a reflection pattern 2370 and a sensing pattern 2390 are shown.

[0310] The reflection pattern 2370 is disposed only in the reflection region III. Therefore, the reflection pattern 2370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflection pattern 2370 is disposed as one pattern. In a plan view, the reflection pattern 2370 is disposed in a size similar to that of the sensing pattern 2390.

[0311] The sensing pattern 2390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 2390 may be electrically connected to a sensing driver (not shown) through a connecting line 2395. The connecting line 2395 may include the same material as that of the sensing pattern 2390. The connecting line 2395 may be disposed on the same layer as the sensing pattern 2390. However, the present invention is not limited thereto, and the connecting line 2395 may include a material different from that of the sensing pattern 2390.

[0312] The sensing pattern 2390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 2390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0313] The sensing pattern 2390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 2390 may have an appropriate size according to the size of the display device.

[0314] In a plan view, the reflective pattern 2370 is set to a similar size as the sensing pattern 2390. The reflective pattern 2370 is electrically connected to the sensing pattern 2390 through the contact hole CNT. Therefore, the sensing electrode of the self-capacitive type touch screen panel can have a low resistance.

[0315] Fig.58 is a plan view showing an OLED device according to an exemplary embodiment of the present invention. Fig.59 It is along Fig.58 A cross-sectional view taken along line VI-VI'.

[0316] The OLED device according to the illustrated exemplary embodiment is similar to the embodiment shown in FIG. 1 , except for the reflective pattern 3370, the thin film encapsulation layer 3410, the fourth insulating layer 3420, and the sensing pattern 3390. Figure 1 and Figure 2 The OLED devices are substantially the same and thus like reference numerals are used for the same elements and repeated explanation will be omitted.

[0317] Reference Fig.58 and Fig.59 , a thin film encapsulation layer 3410 is provided on the upper electrode 3340. The thin film encapsulation layer 3410 may be provided by stacking (eg, sequentially stacking) a first inorganic layer, an organic layer, and a second inorganic layer.

[0318] In an exemplary embodiment, the organic layer may include a polymer, and may also be a single layer or multiple layers (e.g., stacked layers) including, for example, one of polyethylene terephthalate, polyimide, polycarbonate, epoxy resin, polyethylene, and polyacrylate. In an exemplary embodiment, the organic layer may also include polyacrylate, for example, the organic layer may include a polymerized monomer composition including a diacrylate monomer or a triacrylate monomer. The monomer composition may also include a monoacrylate monomer. The monomer composition may also include a suitable photoinitiator such as a thermoplastic polyolefin ("TPO"), but is not limited thereto.

[0319] The first inorganic layer and the second inorganic layer may be a single layer or a stacked layer including a metal oxide or a metal nitride. In an exemplary embodiment, the first inorganic layer and the second inorganic layer may include silicon nitride (eg, SiN x ), aluminum oxide (e.g., Al 2 O 3 ), silicon oxide (e.g., SiO 2 ) and titanium oxide (e.g., TiO 2 ) In this case, the second inorganic layer can prevent or reduce moisture from penetrating into the light emitting structure.

[0320] The sensing pattern 3390 is disposed on the thin film encapsulation layer 3410. The sensing pattern 3390 may be disposed in the light emitting region II and the reflective region III.

[0321] The sensing pattern 3390 may include a material having a predetermined reflectivity. In an exemplary embodiment, the sensing pattern 3390 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the sensing pattern 3390 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the sensing pattern 3390 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0322] The fourth insulating layer 3420 is disposed on the sensing patterns 3390. The fourth insulating layer 3420 may include an adhesive material.

[0323] The reflective pattern 3370 is disposed on the fourth insulating layer 3420. The reflective pattern 3370 may be disposed in the reflective region III.

[0324] The reflective pattern 3370 may include a material having a predetermined reflectivity. In an exemplary embodiment, the reflective pattern 3370 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the reflective pattern 3370 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the reflective pattern 3370 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0325] The sensing pattern 3390 can be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when contacting an electrical conductor, the capacitance of the sensing pattern 3390 around the touch position is changed. Therefore, the touch panel sensor (not shown) can determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance. However, the present invention is not limited to this, and the reflective pattern 3370 can be used as a sensing electrode of a self-capacitive touch screen panel. In addition, both the reflective pattern 3370 and the sensing pattern 3390 can be used as a sensing electrode of a self-capacitive touch screen panel.

[0326] Figure 60 to Figure 67 It shows the manufacturing Fig.59 A cross-sectional view of a method for manufacturing an OLED device.

[0327] Reference Fig.60 A buffer layer 3115 is disposed on the first substrate 3110. Then, an active pattern 3130 and a first insulating layer 3150 are disposed on the buffer layer 3115.

[0328] In an exemplary embodiment, the first substrate 3110 may include, for example, at least one of quartz, artificial quartz, calcium fluoride, fluorine-doped quartz, soda-lime glass, alkali-free glass, and the like.

[0329] A buffer layer 3115 may be disposed on the first substrate 3110. The buffer layer 3115 may extend from the light emitting region II into the reflective region III. The buffer layer 3115 may prevent metal atoms and / or impurities from diffusing (e.g., outgassing) from the first substrate 3110. In addition, the buffer layer 3115 may control the heat transfer rate in a crystallization process for forming the active pattern 3130, thereby obtaining a substantially uniform active pattern 3130. In addition, the buffer layer 3115 may improve the surface flatness of the first substrate 3110 when the surface of the first substrate 3110 is relatively irregular. Depending on the type of the first substrate 3110, at least two buffer layers may be disposed on the first substrate 3110, or no buffer layer may be disposed.

[0330] In exemplary embodiments, the active pattern 3130 may include, for example, at least one of an oxide semiconductor, an inorganic semiconductor (eg, amorphous silicon, polycrystalline silicon, etc.), an organic semiconductor, or the like.

[0331] A first insulating layer 3150 may be disposed on the active pattern 3130. The first insulating layer 3150 may cover the active pattern 3130 in the light emitting region II, and may extend along the first direction on the first substrate 3110. That is, the first insulating layer 3150 may be disposed on the entire first substrate 3110. In an exemplary embodiment, the first insulating layer 3150 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0332] Reference Fig.61 , a gate electrode 3170 and a second insulating layer 3190 are disposed on a first substrate 3110 on which a first insulating layer 3150 is disposed.

[0333] The gate electrode 3170 may be disposed on a portion of the first insulating layer 3150 under which the active pattern 3130 is disposed. In exemplary embodiments, the gate electrode 3170 may include, for example, at least one of metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, and the like.

[0334] A second insulating layer 3190 may be disposed on the gate electrode 3170. The second insulating layer 3190 may cover the gate electrode 3170 in the light emitting region II and may extend along the first direction on the first substrate 3110. That is, the second insulating layer 3190 may be disposed on the entire first substrate 3110. In an exemplary embodiment, the second insulating layer 3190 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0335] Reference Fig.62 , a source electrode 3210 and a drain electrode 3230 are disposed on a first substrate 3110 on which a second insulating layer 3190 is disposed.

[0336] A source electrode 3210 and a drain electrode 3230 may be disposed on the second insulating layer 3190. The source electrode 3210 may contact a first side of the active layer 3130 by removing a portion of the first insulating layer 3150 and a portion of the second insulating layer 3190. The drain electrode 3230 may contact a second side of the active layer 3130 by removing a second portion of the first insulating layer 3150 and a second portion of the second insulating layer 3190. In an exemplary embodiment, each of the source electrode 3210 and the drain electrode 3230 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0337] Reference Fig.63 , a third insulating layer 3270 and a lower electrode 3290 are disposed on the first substrate 3110 on which the source electrode 3210 and the drain electrode 3230 are disposed.

[0338] A third insulating layer 3270 may be disposed on the source electrode 3210 and the drain electrode 3230. The third insulating layer 3270 may cover the source electrode 3210 and the drain electrode 3230 in the light emitting region II, and may extend along the first direction on the first substrate 3110. That is, the third insulating layer 3270 may be disposed on the entire first substrate 3110. In an exemplary embodiment, the third insulating layer 3270 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0339] A lower electrode 3290 may be disposed on the third insulating layer 3270. By removing a portion of the third insulating layer 3270, the lower electrode 3290 may contact the drain electrode 3230. In addition, the lower electrode 3290 may be electrically connected to the semiconductor element 3250. In an exemplary embodiment, the lower electrode 3290 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0340] Reference Fig.64 A pixel defining layer 3310, a light emitting layer 3330 and an upper electrode 3340 are disposed on the first substrate 3110 on which the lower electrode 3290 is disposed.

[0341] A pixel defining layer 3310 may be disposed on the third insulating layer 3270 to expose a portion of the lower electrode 3290. The pixel defining layer 3310 may include an organic material or an inorganic material. In this case, a light emitting layer 3330 may be disposed on a portion of the lower electrode 3290 exposed by the pixel defining layer 3310.

[0342] A light emitting layer 3330 may be disposed on the exposed lower electrode 3290. The light emitting layer 3330 may be disposed using a light emitting material that generates light of different colors (eg, red light, blue light, and green light).

[0343] An upper electrode 3340 may be disposed on the pixel defining layer 3310 and the light emitting layer 3330. The upper electrode 3340 may cover the pixel defining layer 3310 and the light emitting layer 3330 in the light emitting region II and the reflective region III, and may extend along the first direction on the first substrate 3110. That is, the upper electrode 3340 may be electrically connected to the first pixel to the third pixel. In an exemplary embodiment, the upper electrode 3340 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These materials may be used alone or in combination.

[0344] Reference Fig.65 , a thin film encapsulation layer 3410 is disposed on the first substrate 3110 on which the upper electrode 3340 is disposed.

[0345] The thin film encapsulation layer 3410 may be provided by stacking (eg, sequentially stacking) a first inorganic layer, an organic layer, and a second inorganic layer.

[0346] In an exemplary embodiment, the organic layer may include a polymer, and may also be a single layer or multiple layers (e.g., stacked layers) including, for example, one of polyethylene terephthalate, polyimide, polycarbonate, epoxy resin, polyethylene, and polyacrylate. In an exemplary embodiment, the organic layer may also include polyacrylate, for example, the organic layer may include a polymerized monomer composition including a diacrylate monomer or a triacrylate monomer. The monomer composition may also include a monoacrylate monomer. The monomer composition may also include a suitable photoinitiator such as TPO, but is not limited thereto.

[0347] The first inorganic layer and the second inorganic layer may be a single layer or a stacked layer including a metal oxide or a metal nitride. In an exemplary embodiment, the first inorganic layer and the second inorganic layer may include, for example, silicon nitride (e.g., SiN x ), aluminum oxide (e.g., Al 2 O 3 ), silicon oxide (e.g., SiO 2 ) and titanium oxide (e.g., TiO 2 ) In this case, the second inorganic layer can prevent or reduce moisture from penetrating into the light emitting structure.

[0348] Reference Fig.66 , a sensing pattern 3390 is disposed on the first substrate 3110 on which the thin film encapsulation layer 3410 is disposed.

[0349] The sensing pattern 3390 may be disposed in the light emitting region II and the reflective region III.

[0350] The sensing pattern 3390 may include a material having a predetermined reflectivity. In an exemplary embodiment, the sensing pattern 3390 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the sensing pattern 3390 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the sensing pattern 3390 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0351] Reference Fig.67 , a fourth insulating layer 3420 is disposed on the first substrate 3110 on which the sensing pattern 3390 is disposed.

[0352] The fourth insulating layer 3420 is disposed on the sensing pattern 3390. The fourth insulating layer 3420 may prevent oxidation of the sensing pattern 3390. The fourth insulating layer 3420 may include an adhesive material. The fourth insulating layer 3420 may insulate between the reflective pattern 3370 and the sensing pattern 3390.

[0353] Reference Fig.59 , a reflective pattern 3370 is disposed on the first substrate 3110 on which the fourth insulating layer 3420 is disposed.

[0354] A reflective pattern 3370 may be provided in the reflective region III.

[0355] The reflective pattern 3370 may include a material having a predetermined reflectivity. In an exemplary embodiment, the reflective pattern 3370 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the reflective pattern 3370 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the reflective pattern 3370 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0356] Fig.68 It is shown Fig.59 Plan view of the reflection pattern. Fig.69 It is shown Fig.59 A plan view of the sensing pattern. Fig.70 It is shown Fig.68 The reflection pattern and Fig.69 A plan view of the sensing pattern.

[0357] Reference Fig.59 and Figures 68 to 70 , a reflection pattern 3370 and a sensing pattern 3390 are shown.

[0358] The reflective pattern 3370 is disposed only in the reflective region III. Therefore, the reflective pattern 3370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 3370 is disposed as one pattern.

[0359] The sensing pattern 3390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 3390 may be electrically connected to a sensing driver (not shown) through a connecting line 3395. The connecting line 3395 may include the same material as that of the sensing pattern 3390. The connecting line 3395 may be disposed on the same layer as the sensing pattern 3390. However, the present invention is not limited thereto, and the connecting line 3395 may include a material different from that of the sensing pattern 3390.

[0360] The sensing pattern 3390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 3390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0361] The sensing pattern 3390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 3390 may have an appropriate size according to the size of the display device.

[0362] Fig.71 It is shown Fig.59 Plan view of the reflection pattern. Fig.72 It is shown Fig.59 A plan view of the sensing pattern. Fig.73 It is shown Fig.71 The reflection pattern and Fig.72 A plan view of the sensing pattern.

[0363] Reference Fig.59 and Figure 71 to Figure 73 , a reflection pattern 3370 and a sensing pattern 3390 are shown.

[0364] The reflective pattern 3370 is only provided in the reflective region III. Therefore, the reflective pattern 3370 is not provided in the region where the pixels 60, 70 and 80 are provided. The reflective pattern 3370 may be used as a sensing electrode of a self-capacitive touch screen panel. The reflective pattern 3370 may have a size corresponding to a predetermined number of unit pixels Px. The reflective pattern 3370 may have an appropriate size according to the size of the display device.

[0365] The reflective pattern 3370 may be electrically connected to a sensing driver (not shown) through a first connection line 3375. The first connection line 3375 may include the same material as that of the reflective pattern 3370. The first connection line 3375 may be disposed on the same layer as the reflective pattern 3370. However, the present invention is not limited thereto, and the first connection line 3375 may include a material different from that of the reflective pattern 3370.

[0366] The sensing pattern 3390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 3390 may be electrically connected to a sensing driver (not shown) through a second connection line 3395. The second connection line 3395 may include the same material as that of the sensing pattern 3390. The second connection line 3395 may be disposed on the same layer as the sensing pattern 3390. However, the present invention is not limited thereto, and the second connection line 3395 may include a material different from that of the sensing pattern 3390.

[0367] The sensing pattern 3390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 3390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0368] The sensing pattern 3390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 3390 may have an appropriate size according to the size of the display device.

[0369] In the illustrated exemplary embodiment, the size of the reflection pattern 3370 may be greater than that of the sensing pattern 3390. In the exemplary embodiment, the reflection pattern 3370 may have a size corresponding to four sensing patterns 3390. However, the present invention is not limited thereto, and the reflection pattern 3370 may have various sizes.

[0370] Since the reflective pattern 3370 is set to a large area, the reflective pattern 3370 can detect a wide range of touch positions. Therefore, the reflective pattern 3370 senses a wide range of touch positions, and after the reflective pattern 3370 senses the touch position, the sensing pattern 3390 senses a precise touch position. Therefore, high-speed driving of the touch screen panel can be performed.

[0371] Fig.74 It is shown Fig.59 Plan view of the reflection pattern. Fig.75 It is shown Fig.59 A plan view of the sensing pattern. Fig.76 It is shown Fig.74 The reflection pattern and Fig.75 A plan view of the sensing pattern.

[0372] Reference Fig.59 and Figure 74 to Figure 76 , a reflection pattern 3370 and a sensing pattern 3390 are shown.

[0373] The reflection pattern 3370 is disposed only in the reflection region III. Therefore, the reflection pattern 1370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflection pattern 2370 is disposed as one pattern.

[0374] The sensing pattern 3390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 3390 may be electrically connected to the sensing driver 3600 through a connecting line 3395. The connecting line 3395 may include the same material as that of the sensing pattern 3390. The connecting line 3395 may be disposed on the same layer as the sensing pattern 3390. However, the present invention is not limited thereto, and the connecting line 3395 may include a material different from that of the sensing pattern 3390.

[0375] The sensing pattern 3390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 3390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0376] The sensing pattern 3390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 3390 may have an appropriate size according to the size of the display device.

[0377] In the exemplary embodiment shown, the sensing patterns 3390 are classified into a plurality of sensing groups including a predetermined number of sensing patterns. In the exemplary embodiment, for example, the sensing patterns of group A are electrically connected to the first group driver 3510, and the sensing patterns of group B are electrically connected to the second group driver 3520. The first group driver 3510 and the second group driver 3520 are electrically connected to the sensing driver 3600.

[0378] When a touch signal is applied to the sensing pattern 3390, the sensing group to which the touch signal is applied is detected, and a precise touch position in the sensing group to which the touch signal is applied is detected. Therefore, high-speed driving of the touch screen panel can be performed.

[0379] Fig.77 It is shown Fig.59 Plan view of the reflection pattern. Fig.78 It is shown Fig.59 A plan view of the sensing pattern. Fig.79 It is shown Fig.77 The reflection pattern and Fig.78 A plan view of the sensing pattern.

[0380] Reference Fig.59 and Figure 77 to Figure 79 , a reflection pattern 3370 and a sensing pattern 3390 are shown.

[0381] The reflective pattern 3370 is disposed only in the reflective region III. Therefore, the reflective pattern 1370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 3370 may be electrically connected to the sensing driver 3600 through the first connection line 3375. The first connection line 3375 may include the same material as that of the reflective pattern 3370. The first connection line 3375 may be disposed on the same layer as the reflective pattern 3370. However, the present invention is not limited thereto, and the first connection line 3375 may include a material different from that of the reflective pattern 3370.

[0382] The sensing pattern 3390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 3390 may be electrically connected to the sensing driver 3600 through the second connection line 3395. The second connection line 3395 may include the same material as the sensing pattern 3390. The second connection line 3395 may be disposed on the same layer as the sensing pattern 3390. However, the present invention is not limited thereto, and the second connection line 3395 may include a material different from the sensing pattern 3390.

[0383] The sensing pattern 3390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 3390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0384] The sensing pattern 3390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 3390 may have an appropriate size according to the size of the display device.

[0385] In the exemplary embodiment shown, the sensing patterns 3390 are classified into a plurality of sensing groups including a predetermined number of sensing patterns. In the exemplary embodiment, for example, the sensing patterns of group A are electrically connected to the first group driver 3510, and the sensing patterns of group B are electrically connected to the second group driver 3520. The first group driver 3510 and the second group driver 3520 are electrically connected to the sensing driver 3600.

[0386] When a touch signal is applied to the sensing pattern 3390, the sensing group to which the touch signal is applied is detected, and a precise touch position in the sensing group to which the touch signal is applied is detected. Therefore, high-speed driving of the touch screen panel can be performed.

[0387] When a touch signal is applied to the sensing pattern 3390, a potential difference occurs between the sensing pattern 3390 and the reflective pattern 3370. Therefore, capacitance occurs between the sensing pattern 3390 and the reflective pattern 3370, so that touch sensitivity decreases due to the capacitance between the sensing pattern 3390 and the reflective pattern 3370.

[0388] However, in the illustrated exemplary embodiment, when a touch signal is applied to the sensing pattern 3390, a signal identical to the touch signal is applied to the reflective pattern 3370. Therefore, there is no potential difference between the sensing pattern 3390 and the reflective pattern 3370. Therefore, there is no capacitance between the sensing pattern 3390 and the reflective pattern 3370, thereby preventing a decrease in touch sensitivity.

[0389] Fig.83 is a plan view showing an OLED device according to an exemplary embodiment of the present invention. Fig.84 It is along Fig.83 A cross-sectional view taken along line VII-VII'.

[0390] In addition to the reflective pattern 4370, the first thin film encapsulation layer 4410, the second thin film encapsulation layer 4420, and the sensing pattern 4390, the OLED device according to the illustrated exemplary embodiment is Figure 1 and Figure 2 The OLED devices are substantially the same and thus like reference numerals are used for the same elements and repeated explanation will be omitted.

[0391] Reference Fig.83 and Fig.84 , a thin film encapsulation layer is disposed on the upper electrode 4340. The thin film encapsulation layer may be provided by stacking (eg, sequentially stacking) a first inorganic layer, an organic layer, and a second inorganic layer.

[0392] In an exemplary embodiment, the organic layer may include a polymer, and may also be a single layer or multiple layers (e.g., stacked layers) including, for example, one of polyethylene terephthalate, polyimide, polycarbonate, epoxy resin, polyethylene, and polyacrylate. In an exemplary embodiment, the organic layer may also include polyacrylate, for example, the organic layer may include a polymerized monomer composition including a diacrylate monomer or a triacrylate monomer. The monomer composition may also include a monoacrylate monomer. The monomer composition may also include a suitable photoinitiator such as TPO, but is not limited thereto.

[0393] The first inorganic layer and the second inorganic layer may be a single layer or a stacked layer including a metal oxide or a metal nitride. In an exemplary embodiment, the first inorganic layer and the second inorganic layer may include, for example, silicon nitride (e.g., SiN x ), aluminum oxide (e.g., Al 2O 3 ), silicon oxide (e.g., SiO 2 ) and titanium oxide (e.g., TiO 2 ) In this case, the second inorganic layer can prevent or reduce moisture from penetrating into the light emitting structure.

[0394] In the illustrated exemplary embodiment, the thin film encapsulation layer may include a first thin film encapsulation layer 4410 and a second thin film encapsulation layer 4420. In the exemplary embodiment, the first thin film encapsulation layer 4410 may have a first inorganic layer and an organic layer. The second thin film encapsulation layer 4420 may have a second inorganic layer, but is not limited thereto.

[0395] The sensing pattern 4390 is disposed on the first thin film encapsulation layer 4410. The sensing pattern 4390 may be disposed in the light emitting region II and the reflective region III.

[0396] The sensing pattern 4390 may include a material having a predetermined reflectivity. In an exemplary embodiment, the sensing pattern 4390 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the sensing pattern 4390 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the sensing pattern 4390 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0397] The second thin film encapsulation layer 4420 is disposed on the sensing pattern 4390. The reflective pattern 4370 is disposed on the second thin film encapsulation layer 4420. The reflective pattern 4370 may be disposed in the reflective region III.

[0398] The reflective pattern 4370 may include a material having a predetermined reflectivity. In an exemplary embodiment, the reflective pattern 4370 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the reflective pattern 4370 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the reflective pattern 4370 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0399] The sensing pattern 4390 can be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when contacting an electrical conductor, the capacitance of the sensing pattern 4390 around the touch position is changed. Therefore, the touch panel sensor (not shown) can determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance. However, the present invention is not limited to this, and the reflective pattern 4370 can be used as a sensing electrode of a self-capacitive touch screen panel. In addition, both the reflective pattern 4370 and the sensing pattern 4390 can be used as a sensing electrode of a self-capacitive touch screen panel.

[0400] Figures 85 to 92 It shows the manufacturing Fig.84 A cross-sectional view of a method for manufacturing an OLED device.

[0401] Reference Fig.85 A buffer layer 4115 is disposed on the first substrate 4110. Then, an active pattern 4130 and a first insulating layer 4150 are disposed on the buffer layer 4115.

[0402] In an exemplary embodiment, the first substrate 4110 may include, for example, at least one of quartz, artificial quartz, calcium fluoride, fluorine-doped quartz, soda-lime glass, alkali-free glass, and the like.

[0403] A buffer layer 4115 may be disposed on the first substrate 4110. The buffer layer 4115 may extend from the light emitting region II into the reflective region III. The buffer layer 4115 may prevent metal atoms and / or impurities from diffusing (e.g., outgassing) from the first substrate 4110. In addition, the buffer layer 4115 may control the heat transfer rate in a crystallization process for forming the active pattern 4130, thereby obtaining a substantially uniform active pattern 4130. In addition, the buffer layer 4115 may improve the surface flatness of the first substrate 4110 when the surface of the first substrate 4110 is relatively irregular. Depending on the type of the first substrate 4110, at least two buffer layers may be disposed on the first substrate 4110, or no buffer layer may be disposed.

[0404] In exemplary embodiments, the active pattern 4130 may include, for example, at least one of an oxide semiconductor, an inorganic semiconductor (eg, amorphous silicon, polycrystalline silicon, etc.), an organic semiconductor, and the like.

[0405] A first insulating layer 4150 may be disposed on the active pattern 4130. The first insulating layer 4150 may cover the active pattern 4130 in the light emitting region II, and may extend along the first direction on the first substrate 4110. That is, the first insulating layer 4150 may be disposed on the entire first substrate 4110. In an exemplary embodiment, the first insulating layer 4150 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0406] Reference Fig.86 , a gate electrode 4170 and a second insulating layer 4190 are disposed on a first substrate 4110 on which a first insulating layer 4150 is disposed.

[0407] The gate electrode 4170 may be disposed on a portion of the first insulating layer 4150 under which the active pattern 4130 is disposed. In exemplary embodiments, the gate electrode 4170 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0408] A second insulating layer 4190 may be disposed on the gate electrode 4170. The second insulating layer 4190 may cover the gate electrode 4170 in the light emitting region II and may extend along the first direction on the first substrate 4110. That is, the second insulating layer 4190 may be disposed on the entire first substrate 4110. In an exemplary embodiment, the second insulating layer 4190 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0409] Reference Fig.87 , a source electrode 4210 and a drain electrode 4230 are disposed on a first substrate 4110 on which a second insulating layer 4190 is disposed.

[0410] A source electrode 4210 and a drain electrode 4230 may be disposed on the second insulating layer 4190. The source electrode 4210 may contact a first side of the active layer 4130 by removing a portion of the first insulating layer 4150 and a portion of the second insulating layer 4190. The drain electrode 4230 may contact a second side of the active layer 4130 by removing a second portion of the first insulating layer 4150 and a second portion of the second insulating layer 4190. In an exemplary embodiment, each of the source electrode 4210 and the drain electrode 4230 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0411] Reference Fig.88 , a third insulating layer 4270 and a lower electrode 4290 are disposed on the first substrate 4110 on which the source electrode 4210 and the drain electrode 4230 are disposed.

[0412] A third insulating layer 4270 may be disposed on the source electrode 4210 and the drain electrode 4230. The third insulating layer 4270 may cover the source electrode 4210 and the drain electrode 4230 in the light emitting region II, and may extend along the first direction on the first substrate 4110. That is, the third insulating layer 4270 may be disposed on the entire first substrate 4110. In an exemplary embodiment, the third insulating layer 4270 may include, for example, at least one of a silicon compound, a metal oxide, and the like.

[0413] A lower electrode 4290 may be disposed on the third insulating layer 4270. By removing a portion of the third insulating layer 4270, the lower electrode 4290 may contact the drain electrode 4230. In addition, the lower electrode 4290 may be electrically connected to the semiconductor element 4250. In an exemplary embodiment, the lower electrode 4290 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like.

[0414] Reference Fig.89 A pixel defining layer 4310, a light emitting layer 4330, and an upper electrode 4340 are disposed on the first substrate 4110 on which the lower electrode 4290 is disposed.

[0415] A pixel defining layer 4310 may be disposed on the third insulating layer 4270 to expose a portion of the lower electrode 4290. The pixel defining layer 4310 may include an organic material or an inorganic material. In this case, a light emitting layer 4330 may be disposed on a portion of the lower electrode 4290 exposed by the pixel defining layer 4310.

[0416] A light emitting layer 4330 may be disposed on the exposed lower electrode 4290. The light emitting layer 4330 may be disposed using a light emitting material that generates light of different colors (eg, red light, blue light, and green light).

[0417] An upper electrode 4340 may be disposed on the pixel defining layer 4310 and the light emitting layer 4330. The upper electrode 4340 may cover the pixel defining layer 4310 and the light emitting layer 4330 in the light emitting region II and the reflective region III, and may extend along the first direction on the first substrate 4110. That is, the upper electrode 4340 may be electrically connected to the first pixel to the third pixel. In an exemplary embodiment, the upper electrode 4340 may include, for example, at least one of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These materials may be used alone or in combination.

[0418] Reference Fig.90 , a first thin film encapsulation layer 4410 is disposed on the first substrate 4110 on which the upper electrode 4340 is disposed.

[0419] In the illustrated exemplary embodiment, the thin film encapsulation layer may include a first thin film encapsulation layer 4410 and a second thin film encapsulation layer 4420. The thin film encapsulation layer may be provided by stacking (eg, sequentially stacking) a first inorganic layer, an organic layer, and a second inorganic layer.

[0420] In an exemplary embodiment, the organic layer may include a polymer, and may also be a single layer or multiple layers (e.g., stacked layers) including, for example, one of polyethylene terephthalate, polyimide, polycarbonate, epoxy resin, polyethylene, and polyacrylate. In an exemplary embodiment, the organic layer may also include polyacrylate, for example, the organic layer may include a polymerized monomer composition including a diacrylate monomer or a triacrylate monomer. The monomer composition may also include a monoacrylate monomer. The monomer composition may also include a suitable photoinitiator such as TPO, but is not limited thereto.

[0421] The first inorganic layer and the second inorganic layer may be a single layer or a stacked layer including a metal oxide or a metal nitride. In an exemplary embodiment, the first inorganic layer and the second inorganic layer may include, for example, silicon nitride (e.g., SiN x ), aluminum oxide (e.g., Al 2 O 3 ), silicon oxide (e.g., SiO 2 ) and titanium oxide (e.g., TiO 2 ) In this case, the second inorganic layer can prevent or reduce moisture from penetrating into the light emitting structure.

[0422] The first thin film encapsulating layer 4410 may have a first inorganic layer. However, the present invention is not limited thereto, and the first thin film encapsulating layer 4410 may have a first inorganic layer and an organic layer.

[0423] Reference Fig.91, a sensing pattern 4390 is disposed on the first substrate 4110 on which the first thin film encapsulation layer 4410 is disposed.

[0424] The sensing pattern 4390 may be disposed in the light emitting region II and the reflective region III.

[0425] The sensing pattern 4390 may include a material having a predetermined reflectivity. In an exemplary embodiment, the sensing pattern 4390 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the sensing pattern 4390 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the sensing pattern 4390 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0426] Reference Fig.92 , a second thin film encapsulation layer 4420 is disposed on the first substrate 4110 on which the sensing pattern 4390 is disposed.

[0427] The second thin film encapsulating layer 4420 may have a second inorganic layer. However, the present invention is not limited thereto, and the second thin film encapsulating layer 4420 may have an organic layer and a second inorganic layer.

[0428] The thin film encapsulation layer according to the illustrated exemplary embodiment includes a first thin film encapsulation layer 4410 and a second thin film encapsulation layer 4420. In addition, a sensing pattern 4390 is disposed between the first thin film encapsulation layer 4410 and the second thin film encapsulation layer 4420. That is, the sensing pattern 4390 is disposed in the thin film encapsulation layer.

[0429] Reference Fig.84 , a reflective pattern 4370 is disposed on the first substrate 4110 on which the second thin film encapsulation layer 4420 is disposed.

[0430] A reflective pattern 4370 may be provided in the reflective region III.

[0431] The reflective pattern 4370 may include a material having a predetermined reflectivity. In an exemplary embodiment, the reflective pattern 4370 may include, for example, at least one of gold (Au), silver (Ag), aluminum (Al), magnesium (Mg), platinum (Pt), nickel (Ni), titanium (Ti), etc. In an alternative exemplary embodiment, the reflective pattern 4370 may include, for example, at least one of an alloy, a metal nitride, a conductive metal oxide, etc. In an exemplary embodiment, the reflective pattern 4370 may include, for example, an aluminum alloy, aluminum nitride (AlN x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, chromium nitride (CrN x ), molybdenum-containing alloys, titanium nitride (TiN x ), Tantalum Nitride (TaN x ), strontium ruthenium oxide (SRO), zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ) etc.

[0432] Fig.93 It is shown Fig.84 Plan view of the reflection pattern. Fig.94 It is shown Fig.84 A plan view of the sensing pattern. Fig.95 It is shown Fig.93 The reflection pattern and Fig.94 A plan view of the sensing pattern.

[0433] Reference Fig.84 and Figure 93 to Figure 95 , a reflection pattern 4370 and a sensing pattern 4390 are shown.

[0434] The reflective pattern 4370 is disposed only in the reflective region III. Therefore, the reflective pattern 4370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 4370 is provided as one pattern.

[0435] The sensing pattern 4390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 4390 may be electrically connected to a sensing driver (not shown) through a connecting line 4395. The connecting line 4395 may include the same material as that of the sensing pattern 4390. The connecting line 4395 may be disposed on the same layer as the sensing pattern 4390. However, the present invention is not limited thereto, and the connecting line 4395 may include a material different from that of the sensing pattern 4390.

[0436] The sensing pattern 4390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 4390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0437] The sensing pattern 4390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 4390 may have an appropriate size according to the size of the display device.

[0438] Fig.96 It is shown Fig.84 Plan view of the reflection pattern. Fig.97 It is shown Fig.84 A plan view of the sensing pattern. Fig.98 It is shown Fig.96 The reflection pattern and Fig.97 A plan view of the sensing pattern.

[0439] Reference Fig.84 and Figures 96 to 98 , a reflection pattern 4370 and a sensing pattern 4390 are shown.

[0440] The reflective pattern 4370 is only provided in the reflective region III. Therefore, the reflective pattern 4370 is not provided in the region where the pixels 60, 70 and 80 are provided. The reflective pattern 4370 may be used as a sensing electrode of a self-capacitive touch screen panel. The reflective pattern 4370 may have a size corresponding to a predetermined number of unit pixels Px. The reflective pattern 4370 may have an appropriate size according to the size of the display device.

[0441] The reflective pattern 4370 may be electrically connected to a sensing driver (not shown) through a first connection line 4375. The first connection line 4375 may include the same material as that of the reflective pattern 4370. The first connection line 4375 may be disposed on the same layer as the reflective pattern 4370. However, the present invention is not limited thereto, and the first connection line 4375 may include a material different from that of the reflective pattern 4370.

[0442] The sensing pattern 4390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 4390 may be electrically connected to a sensing driver (not shown) through a second connection line 4395. The second connection line 4395 may include the same material as that of the sensing pattern 4390. The second connection line 4395 may be disposed on the same layer as the sensing pattern 4390. However, the present invention is not limited thereto, and the second connection line 4395 may include a material different from that of the sensing pattern 4390.

[0443] The sensing pattern 4390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 4390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0444] The sensing pattern 4390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 4390 may have an appropriate size according to the size of the display device.

[0445] In the illustrated exemplary embodiment, the size of the reflection pattern 4370 may be greater than that of the sensing pattern 4390. In an exemplary embodiment, for example, the reflection pattern 4370 may have a size corresponding to four sensing patterns 4390. However, the present invention is not limited thereto, and the reflection pattern 4370 may have various sizes.

[0446] Since the reflective pattern 4370 is set to a larger area, the reflective pattern 4370 can detect a wide range of touch positions. Therefore, the reflective pattern 4370 senses a wide range of touch positions, and after the reflective pattern 4370 senses the touch position, the sensing pattern 4390 senses a precise touch position. Therefore, high-speed driving of the touch screen panel can be performed.

[0447] Fig.99 It is shown Fig.84 Plan view of the reflection pattern. Fig.100 It is shown Fig.84 A plan view of the sensing pattern. Fig.101 It is shown Fig.99 The reflection pattern and Fig.100 A plan view of the sensing pattern.

[0448] Reference Fig.84 and Figures 99 to 101 , a reflection pattern 4370 and a sensing pattern 4390 are shown.

[0449] The reflective pattern 4370 is disposed only in the reflective region III. Therefore, the reflective pattern 4370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 4370 is provided as one pattern.

[0450] The sensing pattern 4390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 4390 may be electrically connected to the sensing driver 4600 through a connection line 4395. The connection line 4395 may include the same material as that of the sensing pattern 4390. The connection line 4395 may be disposed on the same layer as the sensing pattern 4390. However, the present invention is not limited thereto, and the connection line 4395 may include a material different from that of the sensing pattern 4390.

[0451] The sensing pattern 4390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 4390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0452] The sensing pattern 4390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 4390 may have an appropriate size according to the size of the display device.

[0453] In the illustrated exemplary embodiment, the sensing patterns 4390 are classified into a plurality of sensing groups including a predetermined number of sensing patterns. In the exemplary embodiment, for example, the A group sensing patterns are electrically connected to the first group driver 4510, and the B group sensing patterns are electrically connected to the second group driver 4520. The first group driver 4510 and the second group driver 4520 are electrically connected to the sensing driver 4600.

[0454] When a touch signal is applied to the sensing pattern 4390, the sensing group to which the touch signal is applied is detected, and a precise touch position in the sensing group to which the touch signal is applied is detected. Therefore, high-speed driving of the touch screen panel can be performed.

[0455] Fig.102 It is shown Fig.84 Plan view of the reflection pattern. Fig.103 It is shown Fig.84 A plan view of the sensing pattern. Fig.104 It is shown Fig.102 The reflection pattern and Fig.103 A plan view of the sensing pattern.

[0456] Reference Fig.84 and Figure 102 to Figure 104 , a reflection pattern 4370 and a sensing pattern 4390 are shown.

[0457] The reflective pattern 4370 is disposed only in the reflective region III. Therefore, the reflective pattern 4370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 4370 may be electrically connected to the sensing driver 4600 through the first connection line 4375. The first connection line 4375 may include the same material as that of the reflective pattern 4370. The first connection line 4375 may be disposed on the same layer as the reflective pattern 4370. However, the present invention is not limited thereto, and the first connection line 4375 may include a material different from that of the reflective pattern 4370.

[0458] The sensing pattern 4390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 4390 may be electrically connected to the sensing driver 4600 through the second connection line 4395. The second connection line 4395 may include the same material as the sensing pattern 4390. The second connection line 4395 may be disposed on the same layer as the sensing pattern 4390. However, the present invention is not limited thereto, and the second connection line 4395 may include a material different from the sensing pattern 4390.

[0459] The sensing pattern 4390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 4390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0460] The sensing pattern 4390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 4390 may have an appropriate size according to the size of the display device.

[0461] In the illustrated exemplary embodiment, the sensing patterns 4390 are classified into a plurality of sensing groups including a predetermined number of sensing patterns. In the exemplary embodiment, for example, the A group sensing patterns are electrically connected to the first group driver 4510, and the B group sensing patterns are electrically connected to the second group driver 4520. The first group driver 4510 and the second group driver 4520 are electrically connected to the sensing driver 4600.

[0462] When a touch signal is applied to the sensing pattern 4390, the sensing group to which the touch signal is applied is detected, and a precise touch position in the sensing group to which the touch signal is applied is detected. Therefore, high-speed driving of the touch screen panel can be performed.

[0463] When a touch signal is applied to the sensing pattern 4390, a potential difference occurs between the sensing pattern 4390 and the reflective pattern 4370. Therefore, capacitance occurs between the sensing pattern 4390 and the reflective pattern 4370, so that touch sensitivity decreases due to the capacitance between the sensing pattern 4390 and the reflective pattern 4370.

[0464] However, in the illustrated exemplary embodiment, when a touch signal is applied to the sensing pattern 4390, a signal identical to the touch signal is applied to the reflective pattern 4370. Therefore, there is no potential difference between the sensing pattern 4390 and the reflective pattern 4370. Therefore, there is no capacitance between the sensing pattern 4390 and the reflective pattern 4370, thereby preventing a decrease in touch sensitivity.

[0465] Fig.105 It is shown Fig.84 Plan view of the reflection pattern. Fig.106 It is shown Fig.84 A plan view of the sensing pattern. Fig.107 It is shown Fig.105 The reflection pattern and Fig.106 A plan view of the sensing pattern.

[0466] Reference Fig.84 and Figures 105 to 107 , a reflection pattern 4370 and a sensing pattern 4390 are shown.

[0467] The reflective pattern 4370 is disposed only in the reflective region III. Therefore, the reflective pattern 4370 is not disposed in the region where the pixels 60, 70, and 80 are disposed. The reflective pattern 4370 may be electrically connected to the sensing driver 4600 through the first connection line 4375. The first connection line 4375 may include the same material as that of the reflective pattern 4370. The first connection line 4375 may be disposed on the same layer as the reflective pattern 4370. However, the present invention is not limited thereto, and the first connection line 4375 may include a material different from that of the reflective pattern 4370.

[0468] The sensing pattern 4390 is disposed in the light emitting region II and the reflective region III. The sensing pattern 4390 may be electrically connected to the sensing driver 4600 through the second connection line 4395. The second connection line 4395 may include the same material as the sensing pattern 4390. The second connection line 4395 may be disposed on the same layer as the sensing pattern 4390. However, the present invention is not limited thereto, and the second connection line 4395 may include a material different from the sensing pattern 4390.

[0469] The sensing pattern 4390 may be used as a sensing electrode of a self-capacitive touch screen panel. In an exemplary embodiment, for example, when an electrical conductor is contacted, the capacitance of the sensing pattern 4390 around the touch position is changed. Therefore, the touch panel sensor (not shown) may determine the touch position based on a capacitive sensing signal corresponding to the change in capacitance.

[0470] The sensing pattern 4390 may have a size corresponding to a predetermined number of unit pixels Px. The sensing pattern 4390 may have an appropriate size according to the size of the display device.

[0471] In the illustrated exemplary embodiment, the sensing patterns 4390 are classified into a plurality of sensing groups including a predetermined number of sensing patterns. In the exemplary embodiment, for example, the A group sensing patterns are electrically connected to the first group driver 4510, and the B group sensing patterns are electrically connected to the second group driver 4520. The first group driver 4510 and the second group driver 4520 are electrically connected to the sensing driver 4600.

[0472] When a touch signal is applied to the sensing pattern 4390, the sensing group to which the touch signal is applied is detected, and a precise touch position in the sensing group to which the touch signal is applied is detected. Therefore, high-speed driving of the touch screen panel can be performed.

[0473] In an exemplary embodiment, the reflective pattern 4370 is provided to have a size corresponding to one set of sensing patterns 4390. In an exemplary embodiment, the reflective pattern 4370 may have, for example, a size corresponding to eight sensing patterns 4390. However, the present invention is not limited thereto, and the reflective pattern 4370 may have various sizes.

[0474] When a touch signal is applied to the sensing pattern 4390, a potential difference occurs between the sensing pattern 4390 and the reflective pattern 4370. Therefore, capacitance occurs between the sensing pattern 4390 and the reflective pattern 4370, so that touch sensitivity decreases due to the capacitance between the sensing pattern 4390 and the reflective pattern 4370.

[0475] However, in the illustrated exemplary embodiment, when a touch signal is applied to the sensing pattern 4390, a signal identical to the touch signal is applied to the reflective pattern 4370. Therefore, there is no potential difference between the sensing pattern 4390 and the reflective pattern 4370. Therefore, there is no capacitance between the sensing pattern 4390 and the reflective pattern 4370, thereby preventing a decrease in touch sensitivity.

[0476] According to an exemplary embodiment, the OLED device includes a reflective member having a mirror function and a touch function. Therefore, an additional process for forming an electrode layer having a touch function can be omitted. In this way, the manufacturing cost can be reduced.

[0477] In addition, the OLED device includes a first reflective member disposed in the reflective region and a second reflective member disposed in the light emitting region and the reflective region. Therefore, diffuse reflection occurring at the edge of the first reflective member can be reduced.

[0478] In addition, the OLED device includes a thin film encapsulation layer. Therefore, a flexible OLED device having a mirror function and a touch function can be manufactured.

[0479] The foregoing is an illustration of the present invention and should not be construed as limiting the present invention. Although some exemplary embodiments of the present invention have been described, it will be readily appreciated by those skilled in the art that many changes may be made to the exemplary embodiments without departing substantially from the novel teachings and advantages of the present invention. Therefore, all such changes are intended to be included within the scope of the present invention as defined in the claims. In the claims, the term of means plus function is intended to cover the structure described herein as performing the function, and not only structural equivalents, but also equivalent structures. Therefore, it will be understood that the foregoing description is an illustration of the present invention and is not construed as being limited to the specific exemplary embodiments disclosed, and modifications to the disclosed exemplary embodiments and other exemplary embodiments are intended to be included within the scope of the claims. The present invention is defined by the claims and the equivalents of the claims included therein.

Claims

1. A display device, the display device include: a first substrate having a plurality of pixel regions defined therein; a plurality of pixels, located on the first substrate and comprising a plurality of light-emitting layers located between a plurality of lower electrodes and an upper electrode; a second substrate having a side facing the first substrate, wherein the plurality of light-emitting layers are disposed between the second substrate and the first substrate; A touch sensor electrode is located on the second substrate, wherein the touch sensor electrode is located between the first substrate and the second substrate; A plurality of connection lines, respectively connected to the touch sensor electrodes; a pixel defining layer, separating the plurality of pixel regions; and Sense driver, wherein the touch sensor electrodes are electrically connected to the sensing driver; Wherein, the touch sensor electrodes and the plurality of connection lines are formed of metal, The touch sensor electrodes and the plurality of connection lines are located in the same layer. Wherein, the touch sensor electrodes are connected to corresponding connection lines.

2. The display device according to claim 1, in, The touch sensor electrodes and the plurality of connection lines are formed of molybdenum, and Wherein, the first substrate and the second substrate include glass.

3. The display device according to claim 1, in, The touch sensor electrodes are located between the plurality of pixels in a plan view.

4. The display device according to claim 3, in, The touch sensor electrodes and the plurality of connection lines are formed of molybdenum, and Wherein, the first substrate and the second substrate include glass.

5. A display device, the display device include: a first substrate having a plurality of pixel regions defined therein; a plurality of pixels, located on the first substrate and comprising a plurality of light-emitting layers located between a plurality of lower electrodes and an upper electrode; a second substrate having a side facing the first substrate, wherein the plurality of light-emitting layers are disposed between the second substrate and the first substrate; A touch sensor electrode is located on the second substrate, wherein the touch sensor electrode is located between the first substrate and the second substrate; A plurality of connection lines connected to the touch sensor electrodes; A pixel defining layer, separating the plurality of pixel regions; a thin film encapsulation layer, located on the upper electrode; and Sense driver, wherein the touch sensor electrodes are electrically connected to the sensing driver; Wherein, the touch sensor electrodes and the plurality of connection lines are formed of metal, The touch sensor electrodes and the plurality of connection lines are located in the same layer. The thin film encapsulation layer includes a first encapsulation layer, an organic layer and a second inorganic layer stacked sequentially.

6. The display device according to claim 5, in, The touch sensor electrodes and the plurality of connection lines are formed of aluminum and titanium, and Wherein, the first substrate and the second substrate include glass.

7. The display device according to claim 5, in, The touch sensor electrodes are located between the plurality of pixels in a plan view.

8. The display device according to claim 7, in, The touch sensor electrodes and the plurality of connection lines are formed of aluminum and titanium, and Wherein, the first substrate and the second substrate include flexible resin.

9. A display device, the display device include: substrate; a buffer layer, located on the substrate; an active pattern, located on the buffer layer; a first insulating layer, located on the active pattern; a gate electrode, located on a portion of the first insulating layer; a second insulating layer, located on the gate electrode; A source electrode and a drain electrode, located on the substrate; A third insulating layer, located on the source electrode and the drain electrode; A lower electrode, located on the third insulating layer; A light-emitting layer, located on the lower electrode; An upper electrode, located on the light-emitting layer; a pixel defining layer, located on the third insulating layer to expose a portion of the lower electrode; A thin film encapsulation layer, located on the upper electrode; A touch sensor electrode, located on the thin film encapsulation layer; A plurality of connection lines connected to the touch sensor electrodes; as well as Sense driver, wherein the touch sensor electrodes are electrically connected to the sensing driver; wherein the touch sensor electrodes and the plurality of connection lines are formed of aluminum and titanium, The touch sensor electrodes and the plurality of connection lines are located in the same layer. Wherein, the substrate comprises: a first polyimide layer; a barrier film layer, disposed on the first polyimide layer; and a second polyimide layer disposed on the barrier film layer, and The thin film encapsulation layer includes a first encapsulation layer, an organic layer and a second inorganic layer stacked sequentially.

10. A display device, the display device include: substrate; a buffer layer, located on the substrate; an active pattern, located on the buffer layer; a first insulating layer, located on the active pattern; a gate electrode, located on a portion of the first insulating layer; a second insulating layer, located on the gate electrode; A source electrode and a drain electrode, located on the substrate; A third insulating layer, located on the source electrode and the drain electrode; A lower electrode, located on the third insulating layer; A light-emitting layer, located on the lower electrode; An upper electrode, located on the light-emitting layer; a pixel defining layer, located on the third insulating layer to expose a portion of the lower electrode; A thin film encapsulation layer, located on the upper electrode; A touch sensor electrode, located on the thin film encapsulation layer; A connecting wire connected to the touch sensor electrode; as well as Sense driver, wherein the touch sensor electrodes are electrically connected to the sensing driver; wherein the touch sensor electrodes and the connecting wires are formed of aluminum and titanium, Wherein, the touch sensor electrodes and the connecting wires are located in the same layer, Wherein, the touch sensor electrodes are connected to corresponding connection lines, Wherein, the substrate comprises: a first polyimide layer; a barrier film layer, disposed on the first polyimide layer; and a second polyimide layer disposed on the barrier film layer, and The thin film encapsulation layer includes a first encapsulation layer, an organic layer and a second inorganic layer stacked sequentially.

11. A display device, the display device include: a first substrate having a plurality of pixel regions defined therein; a plurality of pixels, located on the first substrate and comprising a plurality of light-emitting layers located between a plurality of lower electrodes and an upper electrode; A touch sensor electrode, located on the first substrate; A plurality of connection lines connected to the touch sensor electrodes; A pixel defining layer, separating the plurality of pixel regions; A thin film encapsulation layer, located on the upper electrode; as well as Sense driver, wherein the touch sensor electrodes are electrically connected to the sensing driver, wherein the touch sensor electrodes and the plurality of connection lines are formed of aluminum and titanium, The touch sensor electrodes and the plurality of connection lines are located in the same layer, and The thin film encapsulation layer includes a first encapsulation layer, an organic layer and a second inorganic layer stacked sequentially.

12. An organic light emitting display device, the organic light emitting display device include: substrate; An organic light-emitting unit, located on the substrate; A metal layer, located on the organic light-emitting unit; A first insulating layer, located on the metal layer; A plurality of sensing patterns, located on the first insulating layer; A thin film encapsulation layer, located on the organic light-emitting unit; as well as Sense driver, Wherein, the organic light-emitting unit comprises an anode, an organic light-emitting layer and a cathode, wherein the plurality of sensing patterns are formed of aluminum and titanium, wherein the metal layer is electrically connected to the sensing driver to improve touch sensitivity, and The metal layer and the plurality of sensing patterns are used as touch sensor electrodes.

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