Image sensing device and method of manufacturing the same

Abstract

The present application provides an image sensing device and a manufacturing method thereof. The image sensing device includes a substrate, a first circuit layer on the substrate, and at least one nanowire photodiode on the first circuit layer and electrically connected to the first circuit layer. The nanowire photodiode includes a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer. The lower material layer includes a perovskite material.

Description

Technical Field

[0001] This invention relates to an image sensing element and a method for manufacturing the same, and more particularly to an image sensing element comprising a nanowire photodiode made of perovskite material. Background Technology

[0002] With the continuous development and growth of digital cameras and electronic scanning products, the market demand for image sensing elements continues to increase. Currently, commonly used image sensing elements include two main categories: charge-coupled devices (CCD sensors) and complementary metal-oxide-semiconductor (CMOS image sensors, CIS). CMOS image sensors are widely used due to their advantages such as low operating voltage, low power consumption, high operating efficiency, random access capability, and the ability to be mass-produced using current semiconductor technology.

[0003] The light-sensing principle of a CMOS image sensor is to distinguish incident light into combinations of different wavelengths. For example, incident light is distinguished into combinations of red, blue, and green light, which are then received by multiple optically sensitive elements, such as photodiodes, on or within a semiconductor substrate, and converted into digital signals of different intensities.

[0004] In existing CMOS image sensors (CIS), photodiodes are fabricated inside the substrate within the pixel area, occupying a large portion of the pixel area. Furthermore, since the photodiode contains a PN junction, which is also located inside the substrate, photoelectrons can easily diffuse into the substrate, increasing crosstalk and parasitic lightensitivity, thus affecting the performance of the CMOS image sensor. Summary of the Invention

[0005] The present invention provides an image sensing element comprising a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on and electrically connected to the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a PN junction or a Schottky junction is formed between the lower material layer and the upper material layer, wherein the lower material layer comprises perovskite material.

[0006] The present invention also provides a method for forming an image sensing element, comprising providing a substrate, forming a first circuit layer on the substrate, and forming at least one nanowire photodiode on the first circuit layer and electrically connected to the first circuit layer, wherein the nanowire photodiode includes a lower material layer and an upper material layer, and a PN junction or a Schottky junction is formed between the lower material layer and the upper material layer, wherein the lower material layer includes perovskite material.

[0007] This invention provides an image sensing element and its fabrication method, comprising a nanowire photodiode composed of perovskite material and a metal oxide layer. The nanowire photodiode is located above the circuit layer, reducing the component's footprint and crosstalk. Furthermore, the method provided by this invention utilizes a low-temperature deposition process to form the nanowire photodiode, allowing integration with existing fabrication processes without compromising component quality. Attached Figure Description

[0008] Figures 1 to 7 This is a cross-sectional structural diagram of an image sensing element fabricated according to an embodiment of the present invention.

[0009] Explanation of main component symbols

[0010] 1: Image sensing element

[0011] 100: First Component

[0012] 100A: Basal region

[0013] 100B: Circuit Area

[0014] 100C: Image sensor area

[0015] 110: Base

[0016] 112: Insulation structure

[0017] 120: Transistor

[0018] 122: Conductive plug

[0019] 124: Conductive circuit

[0020] 126: Dielectric layer

[0021] 130: Dielectric layer

[0022] 132: Contact Structure

[0023] 134: Nanowire pores

[0024] 135: Precursor layer

[0025] 136: Lower material layer

[0026] 138: Upper material layer

[0027] 139: Nanowire photodiode

[0028] 140: PN junction

[0029] 142: Transparent Electrode

[0030] 143: Flattening layer

[0031] 144: Color Filter

[0032] 146: Microlenses

[0033] 200: Second Component

[0034] 200A: Basal region

[0035] 200B: Circuit Area

[0036] 200C: Combination Zone

[0037] 202: Bonding layer

[0038] 204: Wire

[0039] 210: Base

[0040] 300: Contact Structure Detailed Implementation

[0041] To enable those skilled in the art to further understand the present invention, preferred embodiments of the present invention are described below, and the composition and desired effects of the present invention are explained in detail with reference to the accompanying drawings.

[0042] For ease of explanation, the accompanying drawings are merely illustrative to facilitate understanding of the invention, and their detailed proportions can be adjusted according to design requirements. The vertical relationships between relative elements in the drawings described herein should be understood by those skilled in the art to refer to the relative positions of objects; therefore, all can be flipped to present the same components, and this should all fall within the scope of this specification, as stated herein.

[0043] Please refer to Figures 1 to 7 , Figures 1 to 7 A cross-sectional structural diagram illustrating an image sensing element fabricated according to an embodiment of the present invention is shown. Figure 1As shown, firstly, a first element 100 is provided. From the cross-sectional view, the first element 100 includes a base region 100A, a circuit region 100B located on the base region 100A, and an image sensing element region 100C located on the circuit region 100B.

[0044] The substrate region 100A includes a substrate 110 and an insulating structure 112 within the substrate 110. The substrate 110 can be various semiconductor substrates, such as a silicon substrate, an epitaxial silicon substrate, a silicon germanium substrate, a silicon carbide substrate, or a silicon-on-insulator (SOI) substrate. The insulating structure 112 is, for example, shallow trench isolation (STI), and its material may include silicon oxide, silicon nitride, or other insulating materials. Other material or structural features of the substrate 110 and the insulating structure 112 described above are prior art and will not be elaborated upon here.

[0045] The circuit region 100B may include switching elements such as transistors, conductive lines connecting the switching elements, plugs, etc., all of which are located within the dielectric layer. Taking this embodiment as an example, the circuit region 100B includes a transistor 120, at least one conductive plug 122 connecting the transistor 120, and at least one conductive line 124 connecting the conductive plug 122, all of which are located within the dielectric layer 126. The transistor 120 may include a gate (G), source (S), drain (D), and semiconductor layer, among other basic structures. The conductive plug 122 and conductive line 124 may be made of materials with good conductivity, such as tungsten, cobalt, copper, or aluminum. The dielectric layer 126 may be made of materials such as silicon oxide, silicon nitride, or silicon oxynitride; this embodiment uses silicon oxide as an example, but is not limited thereto. Other material or structural features of the transistor 120, conductive plug 122, conductive line 124, and dielectric layer 126 described above are prior art and will not be elaborated upon here.

[0046] The image sensing element area 100C defines the location of the pixel area and includes structures such as image sensing elements (e.g., light-emitting diodes), color filters, and microlenses. These elements will be formed in subsequent steps. Figure 1As shown, the image sensing element region 100C includes a dielectric layer 130 and a contact structure 132. The dielectric layer 130 is made of materials such as silicon oxide, silicon nitride, or silicon oxynitride. This embodiment uses silicon oxide as an example, but it is not limited to this. The contact structure 132 can be made of a material with good conductivity, such as metals like tungsten, cobalt, copper, or aluminum. In this embodiment, the contact structure 132 is used to electrically connect to the conductive plug 122 or conductive line 124 in the lower circuit region 100B, and then to a portion of the transistor 120.

[0047] Then as Figure 2 As shown, an etching step is performed in the dielectric layer 130 to form multiple nanowire holes 134, the positions of which correspond to the conductive plugs 122 or conductive lines 124 below. In subsequent steps, photodiodes will be formed within the nanowire holes 134, and color filters and microlenses will be formed on the photodiodes. Therefore, in this embodiment, the positions of the nanowire holes 134 also define the positions of the pixel areas of the image sensing element. In this embodiment, the nanowire holes 134 can be arranged in an array (not shown), so the color filters (possibly including red, green, and blue color filters) and microlenses contained in the pixel area are also arranged in an array. For simplicity, only a portion of the nanowire holes 134 are shown in this embodiment.

[0048] Please refer to Figure 3 A lower material layer 136 is formed within the nanowire apertures 134. This lower material layer 136 can be formed by chemical vapor deposition (CVD), but is not limited to this; it may also be formed by other methods such as physical vapor deposition (PVD) or atomic layer deposition (ALD). It is worth noting that in this embodiment, the lower material layer 136 is formed after the circuit region 100B has been formed. Therefore, to avoid the fabrication process temperature during the formation of the lower material layer 136 affecting the components (such as transistor 120) within the lower circuit region 100B, a low-temperature deposition process is used to form the lower material layer 136. In this embodiment, the low-temperature deposition process temperature is below 400 degrees Celsius to avoid temperature affecting the component quality within the lower circuit region 100B.

[0049] Furthermore, it is worth noting that the underlying material layer 136 used in this embodiment contains perovskite, which has the general molecular formula ABX3, where A contains methylamine ions, formamidinium ions, and cesium metal ions (Cs). + B contains metal cations (Pb). 2+ Sn 2+ Bi 2+ X contains a halide anion (Cl...) - , Br- ,I - Taking this embodiment as an example, the lower material layer 136 contains MAPbI3 (methylaminolead iodide), FASnCl3, FASnBr3, FASnI3, and FASnCl. x Br y I 3-x-y , MASnCl3, MASnBr3, MASnI3, MASnCl x Br y I 3-x-y , CsSnCl3, CsSnBr3, CsSnI3, CsSnCl x Br y I 3-x-y , FAPbCl3, FAPbBr3, FAPbI3, FAPbCl x Br y I 3-x-y , MAPbCl3, MAPbBr3, MAPbI3, APbCl x Br y I 3-x-y , CsPbCl3, CsPbBr3, CsPbI3, CsPbCl x Br y I 3-x-y FABiCl3, FABiBr3, FABi I3 FABiCl x Br y I 3-x-y , MABiCl3, MABiBr3, MABiI3, MABiCl x Br y I 3-x-y , CsBiCl3, CsBiBr3, CsBiI3, CsBiCl x Br y I 3-x-y The material, wherein the parameters x and y are in the range of 0 to 3, is perovskite. Perovskite material possesses characteristics such as strong light absorption, low-temperature deposition capability, a direct band gap, and the ability to change the band gap by adjusting the material composition. Therefore, it is a suitable material for photodiodes in CMOS image sensors. In this embodiment, perovskite material is deposited by CVD, which also allows the fabrication process temperature to be controlled below 400 degrees Celsius, reducing the probability of affecting other components below.

[0050] In some embodiments, before forming the lower material layer 136 within the nanowire aperture 134, a precursor layer 135 can be formed first within the nanowire aperture 134, located between the lower material layer 136 and the bottom surface (exposed conductive lines 124) of the nanowire aperture 134. The precursor layer 135 contains one of the same metal elements as the lower material layer 136, which helps to make the lower material layer 136 bond more firmly with the conductive lines 124. The material of the precursor layer 135 can be adjusted to match the material of the lower material layer 136. For example, if the lower material layer 136 is lead methylaminoiodide, the precursor layer 135 can be lead, but it is not limited to this.

[0051] like Figure 4 As shown, after the lower material layer 136 is formed within the nanowire apertures 134, if the lower material layer 136 has filled the nanowire apertures 134, part of the lower material layer 136 within the nanowire apertures 134 can be removed through steps such as etching back or planarization. Then, an upper material layer 138 is formed within the nanowire apertures 134, with the upper material layer 138 positioned above the lower material layer 136. It is understood that if the lower material layer 136 does not completely fill the nanowire apertures 134 during formation, the aforementioned etching back steps can be omitted, and the upper material layer 138 can be formed directly within the nanowire apertures 134.

[0052] In this embodiment, the upper material layer 138 is, for example, a transition metal oxide with strong P-type doping capability, a small molecule with strong electron-accepting capability, or a P-type material, such as MoO3 (molybdenum trioxide), V2O5, WO3, Si, Ge, GaAs, GaN, WSe2, NiO, Cu2O, CuO, TCNQ (Tetracyanoquinodimethane), F4-TCNQ, etc., but not limited to these. After both the lower material layer 136 and the upper material layer 138 are completed, the lower material layer 136 (perovskite material) within the nanowire aperture 134 contains an N-type conductive state, while the upper material layer 138 contains a P-type conductive state. Therefore, the two together constitute a nanowire photodiode 139 (composed of the lower material layer 136 and the upper material layer 138), and the nanowire photodiode 139 includes a PN junction 140 located at the boundary between the lower material layer 136 and the upper material layer 138. In this embodiment, the nanowire photodiode 139 and the PN junction 140 are located within the nanowire aperture 134 above the circuit region 100B, thus having the following advantages: First, the nanowire photodiode 139 does not occupy too much area of ​​the substrate 110, which is beneficial for the miniaturization of the overall image sensing element. Second, since the PN junction 140 is not located inside the substrate 110, when the nanowire photodiode 139 absorbs light and generates carriers, the carriers are not easily diffused into the substrate 110, thus avoiding the floating diffusion (FD) within the substrate 110 being affected by the carriers.

[0053] Then as Figure 5 As shown, a transparent electrode 142 is formed on the nanowire photodiode 139. The transparent electrode 142 is made of materials such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO), silver nanowire mesh, or graphene. The transparent electrode 142 is conductive, allowing it to be electrically connected to the nanowire photodiode 139 below, and also has good light transmittance, allowing light to pass through the transparent electrode 142 to reach the nanowire photodiode 139.

[0054] In other embodiments of the present invention, different junctions can be formed on the lower material layer 136 by adjusting the lower material layer 138. For example, as mentioned in the above embodiments, if the lower material layer 136 and the upper material layer 138 contain specific materials (as described in the previous paragraph, and will not be repeated here), a PN junction 140 can be formed between the lower material layer 136 and the upper material layer 138. However, in other embodiments of the present invention, if the upper material layer 138 is omitted after the lower material layer 136 is formed, and a transparent electrode 142 is directly formed on top of the lower material layer 136, a Schottky junction can be formed at the junction of the lower material layer 136 and the transparent electrode 142. This embodiment is also within the scope of the present invention.

[0055] Furthermore, the PN junction 140 described in this invention also includes two types: homojunction and heterojunction, the difference being the material of the upper material layer 138. For example, if the upper material layer 138 is selected from transition metal oxides with strong p-type doping capability (e.g., V2O5, WO3) and small molecules with strong electron-accepting capability (e.g., TCNQ, F4-TCNQ), the formed PN junction is a homojunction. On the other hand, if the upper material layer 138 is directly selected from p-type materials, such as Si, Ge, GaAs, GaN, WSe2, NiO, Cu2O, CuO, etc., the formed PN junction is a heterojunction.

[0056] like Figure 6 As shown, the currently formed first element 100, including a substrate region 100A, a circuit region 100B, and an image sensing element region 100C, is combined with another second element 200. The second element 200 may mainly include a substrate region 200A (including a substrate 210), a circuit region 200B, and a bonding region 200C. The substrate region 200A and the circuit region 200B may be similar to the substrate region 100A and the circuit region 100B mentioned above, and will not be described in detail here.

[0057] The second element 200 and the first element 100 can be formed on different substrates. Next, in... Figure 6 In this step, the first element 100 and the second element 200 are joined together. Furthermore, a bonding area 200C is formed above the circuit area 200B of the second element 200. The bonding area 200C may include a bonding layer 202 and wires 204 inside the bonding layer 202. The bonding layer 202 is, for example, an adhesive layer or other structural layer that helps to join the first element 100 and the second element 200, and the wires 204 may be located inside the bonding layer 202 and electrically connected to the circuit area 200B below.

[0058] exist Figure 6 In this embodiment, the first element 100 and the second element 200 are combined with each other, and the first element 100 and the second element 200 can be electrically connected by forming a contact structure 300, such as a through-silicon via (TSV). In this embodiment, the second element 200 can serve as the logic circuit area of ​​the image sensing element. That is, in this embodiment, the crystalline area (i.e., the first element 100 containing the pixel area) and the logic circuit area (the second element 200) of the image sensing element can be fabricated separately and then combined with each other.

[0059] like Figure 7 As shown, after a planarization layer 143 is formed to cover the transparent electrode 142, a plurality of color filters 144 are formed on the planarization layer 143 and corresponding to each transparent electrode 142. The planarization layer 143 is, for example, a photoresist material, but is not limited thereto. The steps for forming these color filters can be summarized as follows: First, a first spin coating process is performed to form a first color filter layer (not shown) with a first color system (e.g., blue) on the surface of the transparent electrode 142. Then, a first pattern transfer step is performed on the first color filter layer using a photomask (not shown) with a pattern of the first color filter to form at least one first color filter on the transparent electrode 142. Next, a second color filter with a second color system (e.g., green) and a third color filter with a third color system (e.g., red), or other color filters with more color systems, are formed in the same way to complete the color filter array. Subsequently, a planarization layer (not shown) is formed on the color filter 144 using deposition and etching processes, and a plurality of microlenses 146 and a selective protective layer (not shown) are formed on the surface of the planarization layer, thus completing the image sensing element 1 of the present invention.

[0060] In conjunction with the above Figures 1 to 7 The present invention provides an image sensing element 1, comprising a substrate 110, a circuit layer 100B located on the substrate 110, and at least one nanowire photodiode 139 located on and electrically connected to the circuit layer 100B. The nanowire photodiode 139 comprises a lower material layer 136 and an upper material layer 138, and a PN junction 140 or a Schottky junction is provided between the lower material layer 136 and the upper material layer 138. The lower material layer 136 comprises perovskite material.

[0061] In some embodiments of the present invention, the perovskite material has the general molecular formula ABX3, wherein A contains methylamine ions, formamidinium ions, and cesium metal ions (Cs). + B contains metal cations (Pb). 2+ Sn 2+ ,Bi 2+ X contains a halide anion (Cl...) - , Br - ,I - ).

[0062] In some embodiments of the present invention, the perovskite material comprises MAPbI3 (methylaminolead iodide), FASnCl3, FASnBr3, FASnI3, and FASnCl. x Br y I 3-x-y MASnCl3, MASnB r3 MASnI3, MASnCl x Br y I 3-x-y , CsSnCl3, CsSnBr3, CsSnI3, CsSnCl x Br y I 3-x-y , FAPbCl3, FAPbBr3, FAPbI3, FAPbCl x Br y I 3-x-y ,MAPbCl3,MAPbBr3,MAPbI3,MAPbCl x Br y I 3-x-y , CsPbCl3, CsPbBr3, CsPbI3, CsPbCl x Br y I 3-x-y , FABiCl3, FABiBr3, FABiI3, FABiCl x Br y I 3-x-y , MABiCl3, MABiBr3, MABiI3, MABiCl x Br y I 3-x-y , CsBiCl3, CsBiBr3, CsBiI3, CsBiCl x Br y I 3-x-y The parameters x and y are in the range of 0 to 3.

[0063] In some embodiments of the present invention, the perovskite material comprises an N-type conductivity type, and the upper material layer 138 has a P-type conductivity type.

[0064] In some embodiments of the present invention, the upper material layer 138 comprises a metal oxide layer.

[0065] In some embodiments of the present invention, the upper material layer 138 comprises MoO3 (molybdenum trioxide), V2O5, WO3, Si, Ge, GaAs, GaN, WSe2, NiO, Cu2O, CuO, TCNQ (Tetracyanoquinodimethane), and F4-TCNQ.

[0066] In some embodiments of the present invention, at least one optical element (including a color filter 144 and a microlens 146) is located on the nanowire photodiode 139.

[0067] In some embodiments of the present invention, a second element 200 is further included, the second element 200 including at least a second substrate 210 and a second circuit layer 200B, and also including a contact structure 300 that passes through the substrate 110 and electrically connects the first circuit layer 100B and the second circuit layer 200B.

[0068] In some embodiments of the present invention, a precursor layer 135 is further included below the underlying material layer 136, wherein the precursor layer 135 contains a metallic element that is one of the components of the underlying material layer 136.

[0069] The present invention provides a method for forming an image sensing element 1, comprising: providing a substrate 110, forming a first circuit layer 100B on the substrate 110, forming at least one nanowire photodiode 139 on the first circuit layer 100B and electrically connected to the first circuit layer 100B, wherein the nanowire photodiode includes a lower material layer 136 and an upper material layer 138, and a PN junction 140 is formed between the lower material layer 136 and the upper material layer 138, wherein the lower material layer 136 includes perovskite material.

[0070] In some embodiments of the present invention, the perovskite material has the general molecular formula ABX3, wherein A contains methylamine ions, formamidinium ions, and cesium metal ions (Cs). + B contains metal cations (Pb). 2+ Sn 2+ ,Bi 2+ X contains a halide anion (Cl...) - , Br- ,I - ).

[0071] In some embodiments of the present invention, the perovskite material comprises MAPbI3 (methylaminolead iodide), FASnCl3, FASnBr3, FASnI3, and FASnCl. x Br y I 3-x-y , MASnCl3, MASnBr3, MASnI3, MASnCl x Br y I 3-x-y , CsSnCl3, CsSnBr3, CsSnI3, CsSnCl x Br y I 3-x-y , FAPbCl3, FAPbBr3, FAPbI3, FAPbCl x Br y I 3-x-y ,MAPbCl3,MAPbBr3,MAPbI3,MAPbCl x Br y I 3-x-y , CsPbCl3, CsPbBr3, CsPbI3, CsPbCl x Br y I 3-x-y , FABiCl3, FABiBr3, FABiI3, FABiCl x Br y I 3-x-y , MABiCl3, MABiBr3, MABiI3, MABiCl x Br y I 3-x-y , CsBiCl3, CsBiBr3, CsBiI3, CsBiCl x Br y I 3-x-y The parameters x and y are in the range of 0 to 3.

[0072] In some embodiments of the present invention, the perovskite material comprises an N-type conductive state.

[0073] In some embodiments of the present invention, the upper material layer 138 comprises a metal oxide layer and has a P-type conductivity.

[0074] In some embodiments of the present invention, the upper material layer 138 comprises MoO3 (molybdenum trioxide), V2O5, WO3, Si, Ge, GaAs, GaN, WSe2, NiO, Cu2O, CuO, TCNQ (Tetracyanoquinodimethane), and F4-TCNQ.

[0075] In some embodiments of the present invention, at least one optical element (including a color filter 144 and a microlens 146) is formed on the nanowire photodiode 139.

[0076] In some embodiments of the present invention, a second element 200 is formed, the second element 200 including at least a second substrate 210 and a second circuit layer 200B, and further including a contact structure 300 that passes through the substrate 110 and electrically connects the first circuit layer 100B and the second circuit layer 200B.

[0077] In some embodiments of the present invention, the underlying material layer is formed by a chemical vapor deposition (CVD) or an electrochemical method, and the fabrication process temperature is below 400 degrees Celsius.

[0078] In some embodiments of the present invention, the method of forming a nanowire photodiode 139 includes: forming a dielectric layer 130 on a circuit layer 100B, and etching a plurality of arrays of nanowire holes 134 on the dielectric layer 130.

[0079] In some embodiments of the present invention, the method of forming at least a nanowire photodiode 139 further includes: forming a lower material layer 136 within the nanowire apertures 134, and filling a portion of the nanowire apertures 134 with a chemical mechanical polishing or etching process.

[0080] In some embodiments of the present invention, the method of forming at least a nanowire photodiode further includes: forming an upper material layer 138 on a lower material layer 136 and filling nanowire pores 134, wherein a PN junction 140 is formed between the lower material layer 136 and the upper material layer 138.

[0081] In summary, this invention provides an image sensing element and its fabrication method, comprising a nanowire photodiode composed of perovskite material and a metal oxide layer. The nanowire photodiode is located above the circuit layer, reducing the component's footprint and lowering crosstalk. Furthermore, the method provided by this invention utilizes low-temperature deposition to form the nanowire photodiode, allowing integration with existing fabrication processes without compromising component quality.

[0082] The above description is only a preferred embodiment of the present invention. All equivalent changes and modifications made in accordance with the claims of the present invention should be included within the scope of the present invention.

Claims

1. An image sensing element, characterized in that, Include: Base; The first circuit layer is located on the substrate; A dielectric layer, located on the first circuit layer; and A precursor layer and at least one nanowire photodiode are located within at least one nanowire aperture in the dielectric layer and electrically connected to the first circuit layer. The nanowire photodiode includes a lower material layer and an upper material layer, with a PN junction or a Schottky junction between the lower material layer and the upper material layer. The lower material layer contains perovskite material. The precursor layer includes a bottom located between the lower material layer and the first circuit layer and a side portion located between the lower material layer and the aperture wall of the at least one nanowire aperture.

2. The image sensing element as described in claim 1, wherein the perovskite material has the general molecular formula ABX3, wherein A comprises methylamine ions, formamidinium ions, and cesium metal ions (Cs). + B contains metal cations (Pb). 2+ Sn 2+ ,Bi 2+ X contains a halide anion (Cl...) - , Br - ,I - ).

3. The image sensing element as described in claim 2, wherein the perovskite material comprises MAPbI3 (methylaminolead iodide), FASnCl3, FASnBr3, FASnI3, and FASnCl4. x Br y I 3-x-y , MASnCl3, MASnBr3, MASnI3, MASnCl x Br y I 3-x-y , CsSnCl3, CsSnBr3, CsSnI3, CsSnCl x Br y I 3-x-y , FAPbCl3, FAPbBr3, FAPbI3, FAPbCl x Br y I 3-x-y ,MAPbCl3,MAPbBr3,MAPbI3,MAPbCl x Br y I 3-x-y , CsPbCl3, CsPbBr3, CsPbI3, CsPbCl x Br y I 3-x-y , FABiCl3, FABiBr3, FABiI3, FABiCl x Br y I 3-x-y , MABiCl3, MABiBr3, MABiI3, MABiCl x Br y I 3-x-y , CsBiCl3, CsBiBr3, CsBiI3, CsBiCl x Br y I 3-x-y Where x and y are in the range of 0 to 3.

4. The image sensing element as claimed in claim 1, wherein the perovskite material comprises an N-type conductivity type and the upper material layer has a P-type conductivity type.

5. The image sensing element of claim 1, wherein the upper material layer comprises a metal oxide layer.

6. The image sensing element as claimed in claim 1, wherein the upper material layer comprises MoO3 (molybdenum trioxide), V2O5, WO3, Si, Ge, GaAs, GaN, WSe2, NiO, Cu2O, CuO, TCNQ (Tetracyanoquinodimethane), and F4-TCNQ.

7. The image sensing element of claim 1, comprising at least one optical element located on the nanowire photodiode.

8. The image sensing element of claim 1, further comprising a second element, the second element comprising at least a second substrate and a second circuit layer, and further comprising a contact structure passing through the substrate and electrically connecting the first circuit layer and the second circuit layer.

9. The image sensing element of claim 1, wherein the precursor layer comprises a metallic element that is the same as one of the components of the underlying material layer.

10. A method for forming an image sensing element, comprising: Provide a base; A first circuit layer is formed on the substrate; A dielectric layer is formed on the first circuit layer; and A precursor layer and at least one nanowire photodiode are formed in at least one nanowire hole in the dielectric layer and electrically connected to the first circuit layer. The nanowire photodiode includes a lower material layer and an upper material layer, with a PN junction between the lower material layer and the upper material layer. The lower material layer contains perovskite material. The precursor layer includes a bottom located between the lower material layer and the first circuit layer and a side portion located between the lower material layer and the hole wall of the at least one nanowire hole.

11. The formation method as described in claim 10, wherein the perovskite material has the general molecular formula ABX3, wherein A comprises methylamine ions, formamidinium ions, and cesium metal ions (Cs). + B contains metal cations (Pb). 2+ Sn 2+ ,Bi 2+ X contains a halide anion (Cl...) - , Br - ,I - ).

12. The formation method of claim 11, wherein the perovskite material comprises MAPbI3 (methylaminolead iodide), FASnCl3, FASnBr3, FASnI3, and FASnCl. x Br y I 3-x-y , MASnCl3, MASnBr3, MASnI3, MASnCl x Br y I 3-x-y , CsSnCl3, CsSnBr3, CsSnI3, CsSnCl x Br y I 3-x-y FAPbCl3, FAPbBr3, FAPb I3 ,FAPbCl x Br y I 3-x-y ,MAPbCl3,MAPbBr3,MAPbI3,MAPbCl x Br y I 3-x-y , CsPbCl3, CsPbBr3, CsPbI3, CsPbCl x Br y I 3-x-y , FABiCl3, FABiBr3, FABiI3, FABiCl x Br y I 3-x-y , MABiCl3, MABiBr3, MABiI3, MABiCl x Br y I 3-x-y , CsBiCl3, CsBiBr3, CsBiI3, CsBiCl x Br y I 3-x-y Where x and y are in the range of 0 to 3.

13. The formation method of claim 10, wherein the perovskite material comprises an N-type conductive state.

14. The forming method of claim 10, wherein the upper material layer comprises a metal oxide layer and the upper material layer has a P-type conductivity.

15. The forming method of claim 14, wherein the upper material layer comprises MoO3 (molybdenum trioxide), V2O5, WO3, Si, Ge, GaAs, GaN, WSe2, NiO, Cu2O, CuO, TCNQ (Tetracyanoquinodimethane), and F4-TCNQ.

16. The forming method of claim 10, comprising forming at least one optical element on the nanowire photodiode.

17. The forming method of claim 10, further comprising forming a second element, the second element comprising at least a second substrate and a second circuit layer, and further comprising forming a contact structure passing through the substrate and electrically connecting the first circuit layer and the second circuit layer.

18. The method of forming as claimed in claim 10, wherein the underlying material layer is formed by chemical vapor deposition or electrochemical means, and the manufacturing process temperature is below 400 degrees Celsius.

19. The method of forming as claimed in claim 10, wherein the method of forming at least the nanowire photodiode comprises: A dielectric layer is formed on the first circuit layer, and multiple arrays of nanowire holes are etched on the dielectric layer.

20. The method of forming as claimed in claim 19, wherein the method of forming at least the nanowire photodiode further comprises: A lower material layer is formed inside the nanowire pores, and the lower material layer fills part of the nanowire pores by chemical mechanical polishing or etching back.

21. The method of forming as claimed in claim 20, wherein the method of forming at least the nanowire photodiode further comprises: An upper material layer is formed on the lower material layer and fills the nanowire pores, wherein a PN junction or a Schottky junction is present between the lower material layer and the upper material layer.

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