Organic device, manufacturing method, display device, electronic device, and moving body

Abstract

An organic device includes: a reflective film disposed on a substrate; a first insulating film covering the reflective film; a plurality of lower electrodes disposed on the first insulating film; a second insulating film covering a peripheral portion of each of the plurality of lower electrodes and also covering the first insulating film between the plurality of lower electrodes; an organic functional film covering the plurality of lower electrodes and the second insulating film; and an upper electrode disposed on the organic functional film. The reflective film includes a first reflective portion for a first pixel and a second reflective portion for a second pixel. When T1 is defined as the thickness of the first insulating film disposed at a central portion of the first reflective portion, T2 is defined as the thickness of the first insulating film disposed at a central portion of the second reflective portion, ΔT1 is defined as a step on a surface of the first insulating film on the first reflective portion, and ΔT2 is defined as a step on a surface of the first insulating film on the second reflective portion, T1>T2 and ΔT1<ΔT2 are satisfied.

Description

Technical Field

[0001] The present invention relates to an organic device, a method for manufacturing the same, a display device, a photoelectric conversion device, an electronic device, a lighting device, and a moving body. Background Art

[0002] Organic devices such as light-emitting devices including an organic electroluminescence (hereinafter referred to as organic EL) film are known. The organic devices include an organic functional layer containing an organic compound. Japanese Unexamined Patent Application Publication No. 2017-107887 discloses an electro-optical device having a configuration in which when light emitted from an organic EL element passes through a color filter, a desired emission color is obtained for each of B, G, and R pixels. In this electro-optical device, for each of the B, G, and R pixels, an optical resonance structure is formed between the counter electrode and the power supply line serving as a reflection layer, so that light emission with enhanced luminance is obtained at the resonance wavelength corresponding to each of the B, G, and R emission colors.

[0003] In the electro-optical device described in Japanese Unexamined Patent Application Publication No. 2017-107887, the end structures of the pixels are very different between pixels of different colors. Therefore, in the electro-optical device described in Patent Document 1, the leakage current between adjacent pixels may vary greatly depending on the combination of the colors of adjacent pixels. This is disadvantageous for suppressing, for example, image quality degradation caused by color mixing. Summary of the Invention

[0004] The present invention provides a technique that is advantageous for suppressing image quality degradation caused by leakage current between pixels.

[0005] One aspect of the present invention provides an organic device including a reflection film disposed on a substrate, a first insulating film configured to cover the reflection film, a plurality of lower electrodes disposed on the first insulating film, a second insulating film configured to cover the peripheral portions of each of the plurality of lower electrodes and the first insulating film between the plurality of lower electrodes, an organic functional film configured to cover the plurality of lower electrodes and the second insulating film, and an upper electrode disposed on the organic functional film, wherein the reflection film includes a first reflection portion for a first pixel and a second reflection portion for a second pixel, and T1>T2 and ΔT1<ΔT2 are satisfied, where T1 represents the thickness of the first insulating film disposed on the central portion of the first reflection portion, T2 represents the thickness of the first insulating film disposed on the central portion of the second reflection portion, ΔT1 represents the step on the surface of the first insulating film on the first reflection portion, and ΔT2 represents the step on the surface of the first insulating film on the second reflection portion.

[0006] Other features and advantages of the present invention will become apparent from the following description in conjunction with the accompanying drawings. Note that in all the drawings, the same reference numerals denote the same or similar components. Description of the Drawings

[0007] The drawings included in and constituting a part of the specification illustrate embodiments of the present invention and, together with the description, are used to explain the principles of the present invention.

[0008] Figure 1 is a schematic diagram showing a cross-sectional structure of an organic device according to a first embodiment;

[0009] Figure 2 is a schematic diagram showing a cross-sectional structure of a modified example of an organic device according to a first embodiment;

[0010] Figure 3A is a diagram showing a manufacturing method of an organic device according to a first embodiment;

[0011] Figure 3B is a diagram showing a manufacturing method of an organic device according to a first embodiment;

[0012] Figure 3C is a diagram showing a manufacturing method of an organic device according to a first embodiment;

[0013] Figure 3D is a diagram showing a manufacturing method of an organic device according to a first embodiment;

[0014] Figure 3E is a diagram showing a manufacturing method of an organic device according to a first embodiment;

[0015] Figure 3F is a diagram showing a manufacturing method of an organic device according to a first embodiment;

[0016] Figure 3G is a diagram showing a manufacturing method of an organic device according to a first embodiment;

[0017] Figure 3H is a diagram showing a manufacturing method of an organic device according to a first embodiment;

[0018] Figure 4 is a schematic diagram showing a cross-sectional structure of an organic device according to a second embodiment;

[0019] Figure 5A is a diagram showing a manufacturing method of an organic device according to a second embodiment;

[0020] Figure 5B is a diagram showing a manufacturing method of an organic device according to a second embodiment;

[0021] Figure 5C is a view showing a manufacturing method of an organic device according to a second embodiment;

[0022] Figure 5D is a view showing a manufacturing method of an organic device according to a second embodiment;

[0023] Figure 5E is a view showing a manufacturing method of an organic device according to a second embodiment;

[0024] Figure 5F is a view showing a manufacturing method of an organic device according to a second embodiment;

[0025] Figure 5G is a view showing a manufacturing method of an organic device according to a second embodiment;

[0026] Figure 5H is a view showing a manufacturing method of an organic device according to a second embodiment;

[0027] Figure 5I is a view showing a manufacturing method of an organic device according to a second embodiment;

[0028] Figure 6 is a view schematically showing a plan view of an organic device according to a third embodiment;

[0029] Figure 7A is a view schematically showing a cross-sectional structure of an organic device according to a third embodiment;

[0030] Figure 7B is a view schematically showing a cross-sectional structure of an organic device according to a third embodiment;

[0031] Figure 8 is a view schematically showing a plan view of an organic device according to a fourth embodiment;

[0032] Figure 9A is a view schematically showing a cross-sectional structure of an organic device according to a fourth embodiment;

[0033] Figure 9B is a view schematically showing a cross-sectional structure of an organic device according to a fourth embodiment;

[0034] Figure 10 is a view schematically showing a cross-sectional structure of an organic device according to a fifth embodiment;

[0035] Figure 11 is a schematic view showing an example of a display device;

[0036] Figure 12A is a schematic view showing an example of a display device;

[0037] Figure 12B is a schematic diagram showing an example of a display device;

[0038] Figure 13A is a schematic diagram showing an example of a display device;

[0039] Figure 13B is a schematic diagram showing an example of a display device;

[0040] Figure 14A is a schematic diagram showing an example of a lighting device;

[0041] Figure 14B is a schematic diagram showing an example of a moving body;

[0042] Figure 15A is a diagram showing an example of a display camera device;

[0043] Figure 15B is a diagram showing an example of a display camera device; and

[0044] Figure 15C is a diagram showing an example of a display camera device. Detailed Description of the Embodiment

[0045] Hereinafter, the embodiments will be described in detail with reference to the drawings. Note that the following embodiments are not intended to limit the scope of the claimed invention. In the embodiments, a plurality of features are described, but the invention does not require all of these features, and a plurality of such features can be appropriately combined. Further, in the drawings, the same reference numerals denote the same or similar configurations, and redundant description thereof is omitted.

[0046] Figure 1 Schematically shows a cross-sectional structure of an organic device 1 according to a first embodiment. Figure 2 Schematically shows a cross-sectional structure of a modified example of the organic device 1 according to the first embodiment. The organic device 1 includes a first pixel 201r, a second pixel 201g, and a third pixel 201b. The first pixel 201r, the second pixel 201g, and the third pixel 201b are pixels that are different from each other in terms of the structure of an (hereinafter-described) optical adjustment film 114. The first pixel 201r, the second pixel 201g, and the third pixel 201b are pixels that are different from each other in terms of the color of light emitted from the organic device 1 to the outside. The first pixel 201r emits red (R) light, the second pixel 201g emits green (G) light, and the third pixel 201b emits blue (B) light. The organic device 1 may include a plurality of first pixels 201r, a plurality of second pixels 201g, and a plurality of third pixels 201b. As Figure 6 schematically shown, if the first pixel 201r, the second pixel 201g, and the third pixel 201b are arranged, thenFigure 1 or Figure 2 The cross-sectional structure shown may correspond to a cross-section taken along line C-C' in Figure 6 . In Figure 6 , R, G, and B respectively correspond to the first pixel 201r, the second pixel 201g, and the third pixel 201b.

[0047] The organic device 1 may include a substrate such as a semiconductor substrate 101. On the semiconductor substrate 101, an element isolation region 102 (e.g., STI) and MOS transistors for driving light-emitting elements (organic EL elements) may be configured. The MOS transistors may include gate electrodes 103 and source / drain regions 104. The first interlayer insulating film 105 may be configured on the semiconductor substrate 101, and the first wiring layer 107 may be configured on the first interlayer insulating film 105. The gate electrodes 103 and the source / drain regions 104 may be electrically connected to a first wiring pattern of the first wiring layer 107 via the first conductive plug 106. The first interlayer insulating film 105 may be, for example, a BPSG film formed by a thermal CVD method or a SiO 2 film. The first wiring layer pattern of the first wiring layer 107 may be, for example, an AlCu film including a barrier metal such as Ti / TiN. The first conductive plug 106 may be, for example, a W plug including a barrier metal such as Ti / TiN.

[0048] The second interlayer insulating film 108 may be configured on the first wiring layer 107, and a plurality of reflective portions 110 may be configured on the second interlayer insulating film 108. The first wiring pattern of the first wiring layer 107 and the corresponding reflective portions 110 may be electrically connected via the second conductive plug 109. The second interlayer insulating film 108 may be, for example, a SiO formed by a plasma CVD method 2 . The plurality of reflective portions 110 only need to be made of a reflective material. The material of the plurality of reflective portions 110 is preferably a high-reflectivity material such as Al, Ag, or Pt, or may be an alloy containing such a material. Al or an alloy containing Al as a main component is particularly preferred because it is easy to improve the resolution. In addition, the reflective portion 110 may have a stacked structure and may be an AlCu film, and the AlCu film includes a barrier metal such as Ti / TiN between the film and the second interlayer insulating film 108. The second conductive plug 109 may be, for example, a W film including a barrier metal such as Ti / TiN. The plurality of reflective portions 110 may be configured in the wiring layer.

[0049] The optical adjustment film 114 can be configured to cover a plurality of reflection portions 110. The optical adjustment film 114 can include a first film 111, a second film 112 disposed (stacked) on the first film 111, and a third film 113 disposed (stacked) on the second film 112. The optical adjustment film 114 can include a portion formed by the stacked films of the first film 111, the second film 112, and the third film 113, a portion formed by the stacked films of the second film 112 and the third film 113, and a portion formed by the single-layer film of the third film 113. The optical adjustment film 114 or the first film 111, the second film 112, and the third film 113 are light-transmissive insulating films and can be formed of, for example, SiO 2 films, SiN films, SiON films, etc. In a region where both the first film 111 and the second film 112 are present, the second film 112 is disposed on the first film 111. In a region where the first film 111, the second film 112, and the third film 113 are all present, the third film 113 is disposed on the second film 112, and the second film 112 is disposed on the first film 111.

[0050] In the first embodiment, the first pixel 201r includes an optical adjustment film 114r on the reflection portion 110 used for the first pixel 201r, and the optical adjustment film 114r is formed by the stacked films of the first film 111, the second film 112, and the third film 113. The optical adjustment film 114r includes a portion formed by the stacked films of the first film 111, the second film 112, and the third film 113 in the peripheral portion of the reflection portion 110 used for the first pixel 201r. In addition, the optical adjustment film 114r includes a portion formed by the stacked films of the first film 111, the second film 112, and the third film 113 in the central portion of the reflection portion 110 used for the first pixel 201r. The thickness of the optical adjustment film 114r in the central portion of the reflection portion 110 used for the first pixel 201r is represented by Tr. The optical adjustment film 114r of the first pixel 201r includes a step ΔTr on its surface (upper surface). In this example, the step ΔTr can be 0. That is, the step Tr is 0 or more. In Figure 1 or Figure 2 the example shown, the step ΔTr is 0 and not shown. Note that the thickness of the optical adjustment film 114r located in the central portion of the reflection portion 110 is preferably substantially equal to the thickness of the optical adjustment film 114r located in the peripheral portion of the reflection portion 110. In this specification, if D represents the distance from the center of gravity of a member to an end, the central portion of a given member (e.g., a reflection portion or a lower electrode) represents the portion within a range of D / 3 from the center of gravity of the member in a plan view (plane diagram). The peripheral portion of the member represents the portion within a range of D / 8 from the end of the member toward the center of gravity of the member.

[0051] In the first embodiment, the second pixel 201g includes an optical adjustment film 114g. The optical adjustment film 114g includes a portion formed of a stacked film of a first film 111, a second film 112, and a third film 113 in a peripheral portion of a reflection portion 110 used in the second pixel 201g. In addition, the optical adjustment film 114g includes a portion formed of a stacked film of the second film 112 and the third film 113 in a central portion of the reflection portion 110 used in the second pixel 201g. The thickness of the optical adjustment film 114g in the central portion of the reflection portion 110 used in the second pixel 201g is represented by Tg. The optical adjustment film 114g of the second pixel 201g includes a step ΔTg on its surface (upper surface) due to the thickness difference between the peripheral portion and the central portion. In this example, the step ΔTg is greater than 0. Note that the film thickness of the optical adjustment film 114g located in the central portion of the reflection portion 110 is preferably smaller than the film thickness of the optical adjustment film 114g located in the peripheral portion of the reflection portion 110.

[0052] In the first embodiment, the third pixel 201b includes an optical adjustment film 114b. The optical adjustment film 114b includes a portion formed of a stacked film of a first film 111, a second film 112, and a third film 113 in a peripheral portion of a reflection portion 110 used in the third pixel 201b. In addition, the optical adjustment film 114b includes a portion formed of a single-layer film of the third film 113 in a central portion of the reflection portion 110 used in the third pixel 201b. The thickness of the optical adjustment film 114b in the central portion of the reflection portion 110 used in the third pixel 201b is represented by Tb. The optical adjustment film 114b of the third pixel 201b includes a step ΔTb on its surface (upper surface) due to the thickness difference between the peripheral portion and the central portion. In this example, the step ΔTb is greater than 0. Note that the film thickness of the optical adjustment film 114b located in the central portion of the reflection portion 110 is preferably smaller than the film thickness of the optical adjustment film 114b located in the peripheral portion of the reflection portion 110.

[0053] In this example, it is preferably satisfied that Tr > Tg and ΔTr < ΔTg. This means that the difference in the thickness of the optical adjustment film 114r in the peripheral portion of the reflection portion 110 used by the first pixel 201r and the thickness of the optical adjustment film 114g in the peripheral portion of the reflection portion 110 used by the second pixel 201g is reduced. This indicates that this configuration can reduce the difference in the magnitude of the leakage current between the first pixel 201r and another pixel (the second pixel 201g or the third pixel 201b) and the magnitude of the leakage current between the second pixel 201g and another pixel (the first pixel 201r or the third pixel 201b). Therefore, this configuration is beneficial for making the leakage current between the first pixel 201r and other pixels and the leakage current between the second pixel 201g and other pixels less than a predetermined value. As a result, this configuration is beneficial for making the leakage current between pixels less than a predetermined value. In addition, this configuration is beneficial for making the leakage current between the lower electrode 115 and the upper electrode 120 uniform between the first pixel 201r and the second pixel 201g, and is effective for suppressing image quality degradation caused by color mixing. The thickness of the optical adjustment film 114r in the peripheral portion of the reflection portion 110 used by the first pixel 201r and at least a part of the thickness of the optical adjustment film 114g in the peripheral portion of the reflection portion 110 used by the second pixel 201g are particularly preferably substantially equal to each other.

[0054] Alternatively, it is preferably satisfied that Tg > Tb and ΔTg < ΔTb. This means that the difference in the thickness of the optical adjustment film 114g in the peripheral portion of the reflection portion 110 used by the second pixel 201g and the thickness of the optical adjustment film 114b in the peripheral portion of the reflection portion 110 used by the third pixel 201b is reduced. This indicates that this configuration can reduce the difference in the magnitude of the leakage current between the second pixel 201g and another pixel (the first pixel 201r or the third pixel 201b) and the magnitude of the leakage current between the third pixel 201b and another pixel (the first pixel 201r or the second pixel 201g). Therefore, this configuration is beneficial for making the leakage current between the second pixel 201g and other pixels and the leakage current between the third pixel 201b and other pixels less than a predetermined value. As a result, this configuration is beneficial for making the leakage current between pixels less than a predetermined value. In addition, this configuration is beneficial for making the leakage current between the lower electrode 115 and the upper electrode 120 uniform between the second pixel 201g and the third pixel 201b, and is effective for suppressing image quality degradation caused by color mixing. The thickness of the optical adjustment film 114g in the peripheral portion of the reflection portion 110 used by the second pixel 201g and at least a part of the thickness of the optical adjustment film 114b in the peripheral portion of the reflection portion 110 used by the third pixel 201b are particularly preferably substantially equal to each other.

[0055] In addition, it is preferably satisfied that Tr>Tg>Tb and ΔTr<ΔTg<ΔTb. This means that the thickness difference between the optical adjustment films 114r, 114g, and 114b in the peripheral portions of the reflection portion 110 used for the first pixel 201r, the second pixel 201g, and the third pixel 201b is reduced. This indicates that this configuration can reduce the difference in the magnitude of the leakage current between the first pixel 201r, the second pixel 201g, and the third pixel 201b. Therefore, this configuration is beneficial to making the leakage current between pixels less than a predetermined value. In addition, this configuration is beneficial to making the leakage current between the lower electrode 115 and the upper electrode 120 uniform among the first pixel 201r, the second pixel 201g, and the third pixel 201b, and is effective for suppressing image quality deterioration caused by color mixing. It is particularly preferably that at least a part of the thicknesses of the optical adjustment films 114r, 114g, and 114b in the peripheral portions of the reflection portion 110 used for the first pixel 201r, the second pixel 201g, and the third pixel 201b are substantially equal to each other. In addition, it is particularly preferably that the thicknesses of the optical adjustment films 114r, 114g, and 114b in the peripheral portions of the reflection portion 110 used for the first pixel 201r, the second pixel 201g, and the third pixel 201b are substantially equal to at least a part of the thickness of the optical adjustment film 114r in the central portion of the reflection portion 110 used for the first pixel 201r.

[0056] A plurality of lower electrodes 115 may be disposed on the optical adjustment film 114 (114r, 114g, and 114b). The plurality of lower electrodes 115 may be made of a transparent material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). In Figure 1 the first embodiment shown, each lower electrode 115 extends to an opening 116 (contact hole) formed in the optical adjustment film 114 and is electrically connected to the peripheral portion of the reflection portion 110 disposed below the lower electrode 115 in the opening 116. In Figure 2 the modified example shown, each lower electrode 115 is electrically connected to the peripheral portion of the reflection portion 110 disposed below the lower electrode 115 through a plug 117 passing through the optical adjustment film 114. The plug 117 may be, for example, a W plug including a barrier metal such as Ti / TiN.

[0057] The organic device 1 may further include an insulating film 118 that covers the peripheral portions of each of the plurality of lower electrodes 115 and the optical adjustment film 114 between the plurality of lower electrodes 115. Each lower electrode 115 may include a central portion and a peripheral portion surrounding the central portion. The central portion and the peripheral portion may have different thicknesses, and the thickness of the central portion may be less than the thickness of the peripheral portion. The peripheral portion of the lower electrode 115 may be an area covered with the insulating film 118. Each lower electrode 115 may have a step along the optical adjustment film 114. The step of the optical adjustment film 114 may include a portion inclined with respect to the substrate. The insulating film 118 may be, for example, SiO formed by a plasma CVD method. 2 The insulating film 118 is configured to electrically insulate the plurality of lower electrodes 115 from each other.

[0058] An organic functional film 119 may be disposed on the insulating film 118. The organic functional film 119 includes at least an organic light-emitting material layer, and may further include, for example, a charge transport layer and a charge blocking layer. The organic functional film 119 may be continuously disposed in the first pixel 201r and the second pixel 202g. The term "the organic functional film is continuously disposed" may mean that the organic functional films are connected, the organic functional film is disposed on the pixels, or the first pixel and the second pixel share an organic functional film. In addition to the first pixel and the second pixel, the organic functional film 119 may also be continuously disposed in the third pixel 203b. An upper electrode 120 may be disposed on the organic functional film 119. The upper electrode 120 may be made of a transparent material so as to transmit the light generated by the organic functional film 119 without obstruction. The upper electrode 120 may be formed of a thin film of, for example, gold, platinum, silver, aluminum, chromium, magnesium, or an alloy thereof. A sealing film 121 may be disposed on the upper electrode 120. The sealing film 121 is a film for preventing water from penetrating into the semiconductor substrate 101, the organic functional film 119, and the upper electrode 120, and is formed of, for example, a SiN film formed by a plasma CVD method. A color filter layer 122 may be disposed on the sealing film 121. The color filter layer 122 may include a color filter 122R for the first pixel 201r, a color filter 122g for the second pixel 201g, and a color filter 123b for the third pixel 201b. A microlens (not shown) may be provided on the upper side or the lower side of the color filter layer 122. The microlens may be intended to improve the light-emitting efficiency.

[0059] The MOS transistors formed on the semiconductor substrate 101 send electrical signals to each of the lower electrodes 115, and the organic functional film 119 generates light. The light emitted from the organic functional film 119 to the semiconductor substrate 101 is reflected by the reflection portion 110. The light emitted from the organic functional film 119 to the upper electrode 120 and the light reflected by the reflection portion 110 are amplified by resonating at wavelengths corresponding to the thicknesses Tr, Tg, or Tb of the optical adjustment film 114 in the central portion of the reflection portion 110 used for each of the pixels 201r, 201g, and 201b. The light amplified in this way is emitted through the color filters 122r, 122g, or 122b.

[0060] In consideration of the light amplification effect, the thicknesses Tr, Tg, and Tb of the optical adjustment film 114 in the central portion of the reflection portion 110 used for the pixels 201r, 201g, and 201b are determined. On the other hand, the steps ΔTr, ΔTg, and ΔTb can be determined in such a way that the leakage current between the pixels is less than a predetermined value. For example, the steps ΔTr, ΔTg, and ΔTb can be determined in such a way that the thicknesses of the optical adjustment film 114 in the peripheral portions of the reflection portion 110 used for the pixels 201r, 201g, and 201b are equal to each other.

[0061] It is desirable that Tr, Tg, and Tb can be replaced by T1, T2, and T3, ΔTr, ΔTg, and ΔTb can be replaced by ΔT1, ΔT2, and ΔT3, and T1>T2>T3 and ΔT1<ΔT2<ΔT3 are satisfied. Alternatively, it is desirable that Tr and Tg can be replaced by T1 and T2, ΔTr and ΔTg can be replaced by ΔT1 and ΔT2, and T1>T2 and ΔT1<ΔT2 are satisfied. Alternatively, it is desirable that Tg and Tb can be replaced by T1 and T2, ΔTg and ΔTb can be replaced by ΔT1 and ΔT2, and T1>T2 and ΔT1<ΔT2 are satisfied. This embodiment has described the case where the thicknesses Tr, Tg, and Tb of the optical adjustment film 114 in the central portion of the reflection portion 110 used for the red, green, and blue light-emitting pixels have the relationship of Tr>Tg>Tb and the steps ΔTr, ΔTg, and ΔTb have the relationship of ΔTr<ΔTg<ΔTb. However, the magnitude relationship depending on the emission color is not limited to this. For example, the following relationships are possible.

[0062] Relationship A: Tr>Tb>Tg, ΔTr<ΔTb<ΔTg

[0063] Relationship B: Tg>Tr>Tb, ΔTg<ΔTr<ΔTb

[0064] Relationship C: Tg>Tb>Tr, ΔTg<ΔTb<ΔTr

[0065] Relationship D: Tb>Tr>Tg, ΔTb<ΔTr<ΔTg

[0066] Relationship E: Tb > Tg > Tr, ΔTb < ΔTg < ΔTr

[0067] The following will refer to Figures 3A to 3H to describe the manufacturing method of the organic device 1 according to the first embodiment. Note that the description of the steps up to the formation of the conductive plug 109 will be omitted. In Figure 3A the step shown, for example, an AlCu film (for example, an Al film added with 0.5 (atm%) of Cu) is formed on the second interlayer insulating film 108 in which the conductive plug 109 is formed by a sputtering method. After that, the AlCu film can be patterned through a photolithography step and a dry etching step to form a plurality of reflection portions 110. Then, in Figure 3B the step shown, for example, a first film 111a formed of a SiO 2 film is formed by a plasma CVD method. After that, in Figure 3C the step shown, for example, a part of the first film 111a located on the central portion of the reflection portion 110 of the second pixel 201g is removed through a photolithography step and a dry etching step to form a first film 111b. Then, in Figure 3D the step shown, for example, a second film 112a formed of a SiO 2 film is formed by a plasma CVD method. Then, in Figure 3E the step shown, the portions of the first film 111b and the second film 112a located on the central portion of the reflection portion 110 of the third pixel 201b are opened through a photolithography step and a dry etching step. Thus, the first film 111 and the second film 112 are formed.

[0068] Then, in Figure 3F the step shown, for example, a third film 113 formed of a SiO 2 film is formed by a plasma CVD method to form an optical adjustment film 114 formed of the first film 111, the second film 112, and the third film 113. The optical adjustment film 114 includes a first optical adjustment film 114r for the first pixel 201r, a second optical adjustment film 114g for the second pixel 201g, and a third optical adjustment film 114b for the third pixel 201b. The first optical adjustment film 114r has a thickness Tr and a step ΔTr, the second optical adjustment film 114g has a thickness Tg and a step ΔTg, and the third optical adjustment film 114b has a thickness Tb and a step ΔTb. Figures 3A to 3HThe method shown can easily and precisely control the thicknesses of the optical adjustment films 114r, 114g, and 114b in the central portion of the reflection portion 110 used for the first pixel 201r, the second pixel 201g, and the third pixel 201b. In this example, since the thickness of the optical adjustment film 114 can be precisely controlled, optical characteristics such as luminous efficiency and chromaticity of the light-emitting pixels can be precisely controlled. Different from this method, a method of controlling the thicknesses of the optical adjustment films 114r, 114g, and 114b in the central portion of the reflection portion 110 used for the first pixel 201r, the second pixel 201g, and the third pixel 201b by the etching time is also provided. However, in the method of controlling the thickness by the etching time, it is difficult to precisely control the thickness.

[0069] In Figure 3G the step shown, openings 116 (contact holes) are formed in the optical adjustment film 114 through a photolithography step and a dry etching step. After that, for example, an electrode film such as an ITO film or an IZO film is formed by a sputtering method and patterned through a photolithography step and a dry etching step, thereby forming a plurality of lower electrodes 115. In this manufacturing method, the edges of the photoresist patterns for forming the openings 116 and the lower electrodes 115 can be arranged in a region (peripheral portion of the pixel) with a small height difference between the pixels 201r, 201g, and 201b. Therefore, the processing errors of the openings 116 and the lower electrodes 115 between the pixels 201r, 201g, and 201b can be reduced. At least a part of the end portion of each lower electrode 115 is particularly preferably arranged to overlap the peripheral portion of the reflection portion 110 of each pixel in a plan view.

[0070] Next, in Figure 3H the step shown, for example, an SiO 2 film is formed by a plasma CVD method so as to cover the peripheral portion of each of the plurality of lower electrodes 115 and the optical adjustment film 114 between the plurality of lower electrodes 115. After that, the SiO 2 film is patterned through a photolithography step and a dry etching step, thereby forming an insulating film 118. Regarding the insulating film 118, the processing errors between the pixels 201r, 201g, and 201b can also be reduced.

[0071] Although not shown, for example, an organic functional film 119 and an upper electrode 120 are sequentially formed by a vacuum deposition method using a deposition mask, and then, for example, a sealing film 121 is formed by a CVD method. After that, a color filter layer 122 can be formed by a photolithography method. In addition, a microlens can be formed on the upper side or the lower side of the color filter layer to improve the luminous efficiency.

[0072] Figure 4The cross-sectional structure of the organic device 1 according to the second embodiment is schematically shown. Matters not mentioned as the second embodiment can be referred to the first embodiment. In the second embodiment, a plurality of reflecting portions 301 instead of the plurality of reflecting portions 110 in the first embodiment are disposed on the second interlayer insulating film 108. An antireflection electrode 302 is disposed in contact with each reflecting portion 301. Each reflecting portion 301 and each antireflection electrode 302 are electrically connected to each other. Each reflecting portion 301 can be formed of, for example, an AlCu film including a barrier metal such as Ti / TiN. Each antireflection electrode 302 can be formed of a layer including at least one of TiN, Ti, W, Co, Ta, and TaN, and can also have a stacked structure thereof. The film thickness of the antireflection electrode 302 is preferably about 1 to 200 nm. Each antireflection electrode can be formed by, for example, known techniques such as a sputtering method or a deposition method.

[0073] The optical adjustment film 306 can be configured to cover the plurality of reflecting portions 301 and the plurality of antireflection electrodes 302. The optical adjustment film 306 can include a portion formed of a stacked film of the first film 303, the second film 304, and the third film 305, a portion formed of a stacked film of the second film 304 and the third film 305, and a portion formed of a single-layer film of the third film 305. The optical adjustment film 306 or the first film 303, the second film 304, and the third film 305 can be formed of, for example, an SiO 2 film. By forming openings in a part of the interlayer insulating film material and the antireflection electrode material on the reflecting portions 301 of the first pixel 201r, the second pixel 201g, and the third pixel 201b, optical adjustment films 306r, 306g, and 306b with different film thicknesses are formed. If Tr, Tg, and Tb represent the film thicknesses, and ΔTr, ΔTg, and ΔTb represent the stepped film thicknesses formed by the openings, the film thicknesses and the steps have a film thickness relationship of Tr>Tg>Tb and ΔTr<ΔTg<ΔTr, respectively. The member forming each antireflection electrode 302 preferably exists in at least a part of the peripheral portion of the reflecting portion 301, and is more preferably formed to surround the reflecting portion 301. The thickness of each reflecting portion can be different between the central portion and the peripheral portion, and the thickness of the central portion can be smaller than the thickness of the peripheral portion.

[0074] The lower electrode 307 is disposed on the optical adjustment film 306. Each lower electrode 307 is desirably made of a transparent material and is formed using indium tin oxide (ITO) or indium zinc oxide (IZO). An opening 308 is formed in the optical adjustment film 306, and each antireflection electrode 302 and each lower electrode 307 are electrically connected in the opening 308. If each reflecting portion 301 is made of AlCu and each lower electrode 307 is made of an oxygen-containing material, aluminum oxide is formed when each reflecting portion 301 and each lower electrode 307 are in direct contact with each other, which may cause a conduction failure. To address this problem, by electrically connecting each reflecting portion 301 and each lower electrode 307 via the antireflection electrode 302 made of TiN or the like that is difficult to react with oxygen, the occurrence of conduction failure can be prevented. Similar to the first embodiment, the insulating film 118, the organic functional film 119, the upper electrode 120, the sealing film 121, and the color filter 122 may be disposed on the lower electrode 307.

[0075] In the second embodiment, the first pixel 201r includes the optical adjustment film 306r on the reflecting portion 301, and the optical adjustment film 306r may be formed of a stacked film of the first film 303, the second film 304, and the third film 305. The optical adjustment film 306r includes a portion formed of a stacked film of the first film 303, the second film 304, and the third film 305 in the peripheral portion of the reflecting portion 301 used in the first pixel 201r. The optical adjustment film 306r includes a portion formed of a stacked film of the first film 303, the second film 304, and the third film 305 in the central portion of the reflecting portion 301 used in the first pixel 201r. The thickness of the optical adjustment film 306r in the central portion of the reflecting portion 301 used in the first pixel 201r is represented by Tr. The optical adjustment film 306r of the first pixel 201r includes a step ΔTr on its surface (upper surface). In this example, the step Δtr is greater than 0. Additionally, the step between the upper surface of the central portion of the reflecting portion 301 of the first pixel 201r and the upper surface of the antireflection electrode 302 is preferably approximately equal to the step ΔTr.

[0076] In the second embodiment, the second pixel 201g includes an optical adjustment film 306g. The optical adjustment film 306g includes a portion formed of a stacked film of a first film 303, a second film 304, and a third film 305 in a peripheral portion of a reflection portion 301 used in the second pixel 201g. The optical adjustment film 306g includes a portion formed of a stacked film of the second film 304 and the third film 305 in a central portion of the reflection portion 301 used in the second pixel 201g. The thickness of the optical adjustment film 306g in the central portion of the reflection portion 301 used in the second pixel 201g is represented by Tg. The optical adjustment film 306g of the second pixel 201g includes a step ΔTg on its surface (upper surface) due to the thickness difference between the peripheral portion and the central portion and the thickness of the antireflection electrode. In this example, the step ΔTg is greater than 0.

[0077] In the second embodiment, the third pixel 201b includes an optical adjustment film 306b. The optical adjustment film 306b includes a portion formed of a stacked film of a first film 303, a second film 304, and a third film 305 in a peripheral portion of a reflection portion 301 used in the third pixel 201b. The optical adjustment film 306b includes a portion formed of a single-layer film of the third film 305 in a central portion of the reflection portion 301 used in the third pixel 201b. The thickness of the optical adjustment film 306b in the central portion of the reflection portion 301 used in the third pixel 201b is represented by Tb. The optical adjustment film 306b of the third pixel 201b includes a step ΔTb on its surface (upper surface) due to the thickness difference between the peripheral portion and the central portion and the thickness of the antireflection electrode. In this example, the step ΔTb is greater than 0.

[0078] In this example, preferably Tr>Tg and ΔTr<ΔTg are satisfied. This means that the difference in the thickness of the optical adjustment film 306r in the peripheral portion of the reflection portion 301 used by the first pixel 201r and the thickness of the optical adjustment film 306g in the peripheral portion of the reflection portion 301 used by the second pixel 201g is reduced. This indicates that this configuration can reduce the difference in the magnitude of the leakage current between the first pixel 201r and another pixel (the second pixel 201g or the third pixel 201b) and the magnitude of the leakage current between the second pixel 201g and another pixel (the first pixel 201r or the third pixel 201b). Therefore, this configuration is beneficial for making the leakage current between the first pixel 201r and other pixels and the leakage current between the second pixel 201g and other pixels less than a predetermined value. As a result, this configuration is beneficial for making the leakage current between pixels less than a predetermined value. In addition, this configuration is beneficial for making the leakage current between the lower electrode 307 and the upper electrode 120 uniform between the first pixel 201r and the second pixel 201g, and is effective for suppressing deterioration of the image quality caused by color mixing. The thickness of the optical adjustment film 306r in the peripheral portion of the reflection portion 301 used by the first pixel 201r and at least a part of the thickness of the optical adjustment film 306g in the peripheral portion of the reflection portion 301 used by the second pixel 201g are particularly preferably substantially equal to each other.

[0079] Alternatively, preferably Tg>Tb and ΔTg<ΔTb are satisfied. This means that the difference in the thickness of the optical adjustment film 306g in the peripheral portion of the reflection portion 301 used by the second pixel 201g and the thickness of the optical adjustment film 306b in the peripheral portion of the reflection portion 301 used by the third pixel 201b is reduced. This indicates that this configuration can reduce the difference in the magnitude of the leakage current between the second pixel 201g and another pixel (the first pixel 201r or the third pixel 201b) and the magnitude of the leakage current between the third pixel 201b and another pixel (the first pixel 201r or the second pixel 201g). Therefore, this configuration is beneficial for making the leakage current between the second pixel 201g and other pixels and the leakage current between the third pixel 201b and other pixels less than a predetermined value. As a result, this configuration is beneficial for making the leakage current between pixels less than a predetermined value. In addition, this configuration is beneficial for making the leakage current between the lower electrode 307 and the upper electrode 120 uniform between the second pixel 201g and the third pixel 201b, and is effective for suppressing deterioration of the image quality caused by color mixing. The thickness of the optical adjustment film 306g in the peripheral portion of the reflection portion 301 used by the second pixel 201g and at least a part of the thickness of the optical adjustment film 306b in the peripheral portion of the reflection portion 301 used by the third pixel 201b are particularly preferably substantially equal to each other.

[0080] In addition, it is preferably satisfied that Tr>Tg>Tb and ΔTr<ΔTg<ΔTb. This means that the thickness difference between the optical adjustment films 306r, 306g, and 306b in the peripheral portions of the reflection portions 301 used for the first pixel 201r, the second pixel 201g, and the third pixel 201b is reduced. This indicates that this configuration can reduce the difference in the magnitude of the leakage current between the first pixel 201r, the second pixel 201g, and the third pixel 201b. Therefore, this configuration is beneficial for making the leakage current between pixels less than a predetermined value. In addition, this configuration is beneficial for making the leakage current between the lower electrode 307 and the upper electrode 120 uniform among the first pixel 201r, the second pixel 201g, and the third pixel 201b, and is effective for suppressing the deterioration of image quality caused by color mixing. It is particularly preferable that at least a part of the thicknesses of the optical adjustment films 306r, 306g, and 306b in the peripheral portions of the reflection portions 301 used for the first pixel 201r, the second pixel 201g, and the third pixel 201b are substantially equal to each other. In addition, it is particularly preferable that the thicknesses of the optical adjustment films 306r, 306g, and 306b in the peripheral portions of the reflection portions 301 used for the first pixel 201r, the second pixel 201g, and the third pixel 201b are substantially equal to at least a part of the thickness of the optical adjustment film 306r in the central portion of the reflection portion 301 used for the first pixel 201r.

[0081] This embodiment has described the case where the thicknesses Tr, Tg, and Tb of the optical adjustment film 306 in the central portions of the reflection portions 301 used for the red, green, and blue light-emitting pixels have the relationship of Tr>Tg>Tb and the steps ΔTr, ΔTg, and ΔTb have the relationship of ΔTr<ΔTg<ΔTb. However, the magnitude relationship depending on the emission color is not limited to this. For example, the following relationships are possible.

[0082] Relationship A: Tr>Tb>Tg, ΔTr<ΔTb<ΔTg

[0083] Relationship B: Tg>Tr>Tb, ΔTg<ΔTr<ΔTb

[0084] Relationship C: Tg>Tb>Tr, ΔTg<ΔTb<ΔTr

[0085] Relationship D: Tb>Tr>Tg, ΔTb<ΔTr<ΔTg

[0086] Relationship E: Tb>Tg>Tr, ΔTb<ΔTg<ΔTr

[0087] Next, reference will be made to Figures 5A to 5I Describe the manufacturing method of the organic device 1 according to the second embodiment. Note that the description of the steps until the formation of the conductive plug 109 will be omitted. In Figure 5AIn the steps shown, for example, an AlCu film (e.g., an Al film added with 0.5 (atm%) of Cu) and a TiN film (anti-reflection film) are formed on the second interlayer insulating film 108 in which the conductive plug 109 is formed by a sputtering method. Then, the stacked film of the AlCu film and the TiN film can be patterned through a photolithography step and a dry etching step, thereby forming a plurality of stacked bodies each formed of a stacked film of a reflection portion 301 and an anti-reflection electrode 302a. At this time, in the exposure step of the photolithography step, when the anti-reflection electrode 302a suppresses the reflected wave from the AlCu film, a fine reflection portion 301 can be formed.

[0088] Next, in Figure 5B the steps shown, the anti-reflection electrode 302a in the central portion of the reflection portion 301 of each first pixel 201r is removed through a photolithography step and a dry etching step, and a plurality of anti-reflection electrodes 302b are formed. Next, in Figure 5C the steps shown, for example, a first film 303a formed of a SiO 2 film is formed by a plasma CVD method. Next, in Figure 5D the steps shown, the portions of the first film 303a and the anti-reflection electrode 302a located in the central portion of the reflection portion 301 of the second pixel 201g are removed through a photolithography step and a dry etching step. Thus, an anti-reflection electrode 302c and a first film 303b are formed.

[0089] Next, in Figure 5E the steps shown, for example, a second film 304a formed of a SiO 2 film is formed by a plasma CVD method. Next, in Figure 5F the steps shown, the portions of the anti-reflection electrode 302, the first film 303b, and the second film 304a located in the central portion of the reflection portion 301 of the third pixel 201b are removed through a photolithography step and a dry etching step. Thus, an anti-reflection electrode 302, a first film 303, and a second film 304 are formed. Next, in Figure 5G the steps shown, for example, a third film 305 formed of a SiO 2 film is formed by a plasma CVD method, thereby forming an optical adjustment film 306 formed of the first film 303, the second film 304, and the third film 305.

[0090] The optical adjustment film 306 includes a first optical adjustment film 306r for the first pixel 201r, a second optical adjustment film 306g for the second pixel 201g, and a third optical adjustment film 306b for the third pixel 201b. The first optical adjustment film 306r has a thickness Tr and a step ΔTr, the second optical adjustment film 306g has a thickness Tg and a step ΔTg, and the third optical adjustment film 306b has a thickness Tb and a step ΔTb. Figures 5A to 5IThe method shown can easily and precisely control the thicknesses of the optical adjustment films 306r, 306g, and 306b in the central portion of the reflection portion 301 used for the first pixel 201r, the second pixel 201g, and the third pixel 201b. In this example, since the thickness of the optical adjustment film 306 can be precisely controlled, optical characteristics such as luminous efficiency and chromaticity of the light-emitting pixels can be precisely controlled. Different from this method, a method of controlling the thicknesses of the optical adjustment films 306r, 306g, and 306b in the central portion of the reflection portion 301 used for the first pixel 201r, the second pixel 201g, and the third pixel 201b by etching time is also provided. However, in the method of controlling the thickness by etching time, it is difficult to precisely control the thickness.

[0091] Next, in Figure 5H the step shown, openings 308 (contact holes) are formed in the optical adjustment film 306 by a photolithography step and a dry etching step. After that, for example, an electrode film such as an ITO film or an IZO film is formed by a sputtering method and patterned by a photolithography step and a dry etching step, thereby forming a plurality of lower electrodes 307. In this manufacturing method, the edges of the photoresist patterns for forming the openings 308 and the lower electrodes 307 can be arranged in a region (peripheral portion of the pixels) where the height difference between the pixels 201r, 201g, and 201b is small. Therefore, the processing errors of the openings 308 and the lower electrodes 307 between the pixels 201r, 201g, and 201b can be reduced. At least a part of the end portion of each lower electrode 307 is particularly preferably arranged to overlap the antireflection electrode 302 in the peripheral portion of the reflection portion 301 of each pixel in a plan view.

[0092] Next, in Figure 5I the step shown, for example, an SiO 2 film is formed by a plasma CVD method so as to cover the peripheral portions of each of the plurality of lower electrodes 307 and the optical adjustment film 306 between the plurality of lower electrodes 307. After that, the SiO 2 film is patterned by a photolithography step and a dry etching step, thereby forming an insulating film 118. Regarding the insulating film 118, the processing errors between the pixels 201r, 201g, and 201b can also be reduced. Next, although not shown, for example, an organic functional film 119 and an upper electrode 120 are sequentially formed by a vacuum deposition method using a deposition mask. After that, for example, a sealing film 121 is formed by a CVD method, and then, a color filter layer 122 can be formed by a photolithography method. In addition, a microlens can be formed on the upper side or the lower side of the color filter layer.

[0093] Figure 6 A plan view of an organic device according to the third embodiment is schematically shown. Figure 7A A schematic illustration is shown alongFigure 6 The cross-sectional structure taken along line A-A' in Figure 7B is schematically shown along Figure 6 the cross-sectional structure taken along line B-B' in. Matters not mentioned as the third embodiment may be referred to the first or second embodiment. In the third embodiment, a third wiring layer including a reflective film 402 and a wiring pattern 401 is disposed on the second interlayer insulating film 108. Each of the first pixel 201r, the second pixel 201g, and the third pixel 201b includes a lower electrode 403. Each lower electrode 403 may have, for example, a hexagonal shape, but may have another polygonal shape or a shape other than a polygon. The third wiring layer on which the reflective film 402 and the wiring pattern 401 are disposed is a wiring layer for electrically connecting the lower electrode 403 and a lower wiring layer (not shown). The reflective film 402 is electrically insulated from the wiring pattern 401. As Figure 7B shown, the reflective film 402 is a conductor commonly provided for a plurality of pixels including the first pixel 201r, the second pixel 201g, and the third pixel 201b. The reflective film 402 is not separated between pixels and extends over a plurality of pixels in the pixel array region of the organic device. In this configuration, it can also be considered that the reflective film 402 includes a plurality of reflective portions corresponding to the plurality of lower electrodes 403, respectively. It is also considered that the central portion of the reflective portion used for each pixel is a portion overlapping the central portion of the lower electrode 403 disposed on the reflective portion, and the peripheral portion of the reflective portion used for each pixel is a portion overlapping the peripheral portion of the lower electrode 403 disposed on the reflective portion.

[0094] An optical adjustment film 404 according to the first or second embodiment is disposed on the reflective film 402 and the wiring pattern 401. The lower electrode 403 may be disposed on the optical adjustment film 404. The lower electrode 403 and the wiring pattern 401 of the third wiring layer may be electrically connected in an opening 405 formed in the optical adjustment film 404.

[0095] In the third embodiment, the potential of the reflective film 402 can be arbitrarily set. The potential of the reflective film 402 is particularly preferably set such that the potential difference between the upper electrode and the reflective film 402 is lower than the light emission threshold voltage of the organic functional film (the threshold voltage at which the organic functional film operates). When the reflective film 402 is electrically connected to the wiring pattern 401 of a given pixel due to manufacturing variations, the potential of the wiring pattern 401 becomes equal to the potential of the reflective film 402. Since the potential of the wiring pattern 401 and the potential of the lower electrode 403 are equal to each other, if the potential difference between the reflective film 402 and the upper electrode is set to a value equal to or lower than the light emission threshold voltage of the organic light emitting element, the pixel in which the reflective film 402 and the lower electrode 403 are electrically connected does not emit light, and thus no large pixel defects occur.

[0096] Figure 8It is a diagram showing the planar configuration of the third wiring layer according to the fourth embodiment. Figure 9A It schematically shows along Figure 8 the cross-sectional structure taken along line D-D' in Figure 9B It schematically shows along Figure 8 the cross-sectional structure taken along line E-E' in Matters not mentioned as the fourth embodiment may be referred to the first to third embodiments. In the fourth embodiment, the third wiring layer including the reflective film 504 and the wiring pattern 503 is disposed on the second interlayer insulating film 108. Each of the first pixel 201r, the second pixel 201g, and the third pixel 201b includes a lower electrode 509. Each lower electrode 509 may have, for example, a hexagonal shape, but may have another polygonal shape or a shape other than a polygon. As the pixel array, any array such as a stripe array, a delta array, a Bayer array, or a pentile array may be adopted. In particular, the delta array is preferred because circular microlenses are easily arranged. The third wiring layer on which the reflective film 504 and the wiring pattern 503 are disposed is a wiring layer for electrically connecting the lower electrode 509 and the lower wiring layer. The reflective film 504 and the wiring pattern 503 are electrically insulated by removing the conductive material 502 on the reflective material 501 in the third wiring layer. As Figure 9A shown, the wiring pattern 503 has a structure in which the conductive material 502 is stacked on the reflective material 501. The reflective material 501 only needs to be reflective and conductive, and is preferably, for example, a high-reflectivity material such as Al, Ag, or Pt. In addition, the reflective material 501 may be an alloy containing these materials and has a stacked structure. An alloy containing Al is particularly preferred. The conductive material 502 only needs to be conductive, and is particularly preferably a material that is stable when contacting the reflective material 501 and the lower electrode 509. In addition, the conductive material 502 preferably has a low reflectivity, and particularly preferably contains TiN or Ti. The film thickness of the conductive material 502 is preferably about 1 nm to 100 nm.

[0097] As Figure 9BAs shown, the reflective film 504 is a conductor commonly provided for a plurality of pixels including a first pixel 201r, a second pixel 201g, and a third pixel 201b, and is formed of a reflective material 501 and a conductive material 502. The reflective film 504 is not separated between the pixels and extends over the plurality of pixels in the pixel array region of the organic device. In this configuration, it can also be considered that the reflective film 504 includes a plurality of reflective portions respectively corresponding to the plurality of lower electrodes 403. It is also considered that the central portion of the reflective portion used for each pixel is the portion that overlaps the central portion of the lower electrode 403 disposed on the reflective portion in a plan view, and the peripheral portion of the reflective portion used for each pixel is the portion that overlaps the peripheral portion of the lower electrode 403 disposed on the reflective portion in a plan view. In the reflective portion of the reflective film 504, the conductive material 502 is removed to expose the reflective material 501. The conductive material 502 is provided in at least a part of the peripheral portion of each reflective portion. In the peripheral portion of each reflective portion, the conductive material 502 is particularly preferably provided so as to surround the central portion of the reflective portion. In addition, the conductive material 502 is preferably provided between the first pixel 201r, the second pixel 201g, and the third pixel 201b. By using a material having a reflectivity lower than that of the reflective material 501 as the conductive material 502 provided in the peripheral portion of each reflective portion, stray light can be reduced and the contrast can be improved.

[0098] An optical adjustment film 508 according to each of the first to third embodiments is disposed on the reflective film 504 and the wiring pattern 503. A plurality of lower electrodes 509 may be disposed on the optical adjustment film 508. The organic device 1 may further include an insulating film 510 that covers the peripheral portion of each of the plurality of lower electrodes 509 and the optical adjustment film 508 between the plurality of lower electrodes 509. The insulating film 510 corresponds to the insulating film 118 in the first embodiment. The lower electrode 509 and the wiring pattern 503 of the third wiring layer may be electrically connected in an opening 511 formed in the optical adjustment film 508. Since the reflective film 504 and the plurality of wiring patterns 503 disposed in the third wiring layer are electrically insulated, the plurality of lower electrodes 509 corresponding to the plurality of wiring patterns can be electrically connected.

[0099] In the fourth embodiment, the potential of the reflective film 504 can be arbitrarily set. The potential of the reflective film 504 is particularly preferably set such that the potential difference between the reflective film 504 and the upper electrode is equal to or lower than the light emission threshold voltage of the organic light emitting element. When the reflective film 504 is electrically connected to the wiring pattern 503 of a given pixel due to manufacturing variations, the potential of the wiring pattern 503 becomes equal to the potential of the reflective film 504. If the potential difference between the reflective film 504 and the upper electrode is set to a value equal to or lower than the light emission threshold voltage of the organic light emitting element, the pixel electrically connected to the reflective film 504 does not emit light, and thus no large pixel defects occur.

[0100] Figure 10 FIG. 2 schematically shows a cross-sectional view of an organic device according to the fifth embodiment. Matters not mentioned as the fifth embodiment may be referred to the first to fourth embodiments. In the fifth embodiment, a gap 520 is provided between the reflective film 504 and the wiring pattern 503. By providing the gap 520, the insulation between the reflective film 504 and the wiring pattern 503 formed in the same layer can be improved. In particular, if the potential of the reflective film 504 is different from that of the wiring pattern 503, the occurrence of leakage current between the reflective film 504 and the wiring pattern 503 can be suppressed by improving the insulation between them. The gap 520 is particularly preferably provided so as to surround the outer periphery of the wiring pattern. Preferably, the gap 520 is filled with a vacuum or an inert gas. Further, if the reflective film is electrically isolated and provided for each pixel, a gap 520 is preferably provided between the reflective films used for the respective pixels. The gap 520 can be formed by any method. For example, the gap 520 can be formed by etching the optical adjustment film 508 into a groove shape. As another method, the gap 502 can be formed by etching the reflective film 504 or the wiring pattern 503 of the third wiring layer and forming the optical adjustment film 508 by a relatively isotropic growth film forming method. Further, the upper part of the gap 502 is preferably covered with an insulating film, and more preferably covered with the optical adjustment film 508.

[0101] Modifications of the above embodiments will be described below. The organic EL element (organic light emitting element) may have a structure in which an anode, an organic compound layer (organic functional film), and a cathode are disposed on a substrate. A protective layer, a color filter, etc. may be provided on the cathode. If a color filter is provided, a planarization layer may be provided between the protective layer and the color filter. The planarization layer may be made of an acrylic resin or the like.

[0102] Quartz, glass, a silicon wafer, a resin, a metal, etc. can be used as the substrate. Further, switching elements such as transistors, wirings, etc. may be provided on the substrate, and an insulating layer may be provided thereon. The insulating layer can be made of any material as long as it can form contact holes to ensure the conduction state between the anode 2 and the wiring and can ensure insulation from the unconnected wiring. For example, resins such as polyimide, silicon oxide, silicon nitride, etc. can be used.

[0103] A pair of electrodes can be used as electrodes. The pair of electrodes can be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a high potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode. In this example, a configuration in which the lower electrode is the anode and the upper electrode is the cathode or a configuration in which the lower electrode is the cathode and the upper electrode is the anode can be adopted. The lower electrode and the upper electrode only need to have translucency, and can have reflectivity and absorbency.

[0104] As a constituent material of the anode, a material having as large a work function as possible is preferably used. For example, metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, or tungsten, mixtures containing some of them, or alloys obtained by combining some of them can be used. In addition, for example, metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), or indium zinc oxide can be used. In addition, conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0105] One of these electrode materials can be used alone, or two or more of them can be used in combination. The anode can be formed of a single layer or multiple layers.

[0106] When the electrode is used as a reflective film, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, their alloys, their stacked layers, etc. can be used. When the electrode is used as a transparent electrode, an oxide transparent conductive layer made of indium tin oxide (ITO), indium zinc oxide, etc. can be used, but the present invention is not limited thereto. Lithography technology can be used to form the electrode.

[0107] On the other hand, as a constituent material of the cathode, a material having a small work function is preferably used. Examples of such materials include alkali metals such as lithium, alkaline earth metals such as calcium, metals such as aluminum, titanium, manganese, silver, lead, or chromium, and mixtures containing some of them. Alternatively, alloys obtained by combining these metals can also be used. For example, magnesium-silver alloys, aluminum-lithium alloys, aluminum-magnesium alloys, silver-copper alloys, zinc-silver alloys, etc. can be used. Metal oxides such as indium tin oxide (ITO) can also be used. One of these electrode materials can be used alone, or two or more of them can be combined. The cathode can have a single-layer structure or a multi-layer structure. Among them, silver is preferably used. In order to suppress the aggregation of silver, a silver alloy is more preferably used. The ratio of the alloy is not limited as long as the aggregation of silver can be suppressed. For example, the ratio can be 1:1.

[0108] The method for forming the cathode is not particularly limited, but a deposition heating method, a DC sputtering method, or an AC sputtering method can be used. The DC sputtering method or the AC sputtering method is preferably used because it provides good film coverage and the resistance is easily reduced.

[0109] A protective layer can be provided on the upper electrode. For example, by attaching glass provided with a moisture absorbent to the cathode, it is possible to suppress the penetration of water or the like into the organic compound layer and to suppress the occurrence of display defects. In addition, as another embodiment, a passivation film made of silicon nitride or the like can be provided on the cathode to suppress the penetration of water or the like into the organic EL layer. For example, the protective layer can be formed as follows: form the cathode, transfer it to another chamber without breaking the vacuum, and form a silicon nitride film with a thickness of 2 μm by CVD method. After forming the film using the CVD method, atomic layer deposition (ALD method) can be used to provide the protective layer..

[0110] A color filter can be provided on the protective layer. For example, a color filter that takes into account the size of the organic light-emitting element can be provided on another substrate, and this substrate can be bonded to the substrate on which the organic light-emitting element is provided. Alternatively, the color filter can be patterned on the above-mentioned protective layer using photolithography technology. The color filter can be formed of a polymer material. In addition, microlenses can be formed on the upper side or the lower side of the color filter layer.

[0111] A planarization layer can be provided between the color filter and the protective layer. The planarization layer can be formed of an organic compound and can be made of a low-molecular material or a polymer material. However, a polymer material is more preferred.

[0112] The planarization layer can be provided above and below the color filter, and they can use the same or different materials. More specifically, examples of the materials include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin.

[0113] An opposing substrate can be provided on the planarization layer. The opposing substrate is called so because it is provided at a position corresponding to the above-mentioned substrate. The constituent material of the opposing substrate can be the same as that of the above-mentioned substrate.

[0114] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) of the organic light-emitting element according to an embodiment of the present invention are formed by the following method.

[0115] The organic compound layers of the organic light-emitting element according to an embodiment of the present invention can be formed by a dry process using a vacuum deposition method, an ion deposition method, a sputtering method, a plasma method, etc. Instead of the dry process, a wet process of forming a layer by dissolving a solute in an appropriate solvent and using a known coating method (for example, spin coating method, dipping method, casting method, LB method, spraying method, etc.) can be used.

[0116] Here, when forming a layer by a vacuum deposition method, a solution coating method, etc., crystallization hardly occurs and excellent temporal stability is obtained. In addition, when forming a layer by a coating method, a film can be formed in combination with an appropriate binder resin.

[0117] Examples of the binder resin include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin. However, these are only examples and the binder resin is not limited thereto.

[0118] One of these binder resins can be used alone as a homopolymer or copolymer, or two or more of them can be used in combination. In addition, additives such as known plasticizers, antioxidants, ultraviolet absorbers, etc. can also be used as needed.

[0119] The application of the organic device will be exemplarily described below. The organic device can be used as a constituent member of a display device or a lighting device. In addition, the organic device can be applied to an exposure light source of an electrophotographic imaging device, a backlight of a liquid crystal display device, a light-emitting device including a color filter in a white light source, etc.

[0120] The display device can be an image information processing device, which includes an image input unit for inputting image information from a area array CCD, a line array CCD, a memory card, etc. and an information processing unit for processing the input information, and displays the input image on a display unit.

[0121] In addition, the display unit included in a imaging device or an inkjet printer can have a touch panel function. The driving method of the touch panel function can be an infrared method, a capacitive method, a resistive film method, or an electromagnetic induction method, and there is no particular limitation. This display device can be used for the display unit of a multifunctional printer.

[0122] Next, a display device according to an embodiment will be described with reference to the accompanying drawings.

[0123] Figure 11 is a schematic diagram showing an example of a display device according to the present embodiment. The display device 1000 can include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits (FPC) 1002 and 1004 are respectively connected to the touch panel 1003 and the display panel 1005. Transistors are printed on the circuit board 1007. If the display device is not a portable device, the battery 1008 is not required. Even when the display device is a portable device, the battery 1008 can be arranged at other positions. The display panel 1005 can be formed of the organic device 1.

[0124] The display device according to the present embodiment can be used in the display unit of a photoelectric conversion device, which includes an optical unit having a plurality of lenses and an image sensor for receiving light that has passed through the optical unit. The photoelectric conversion device can include a display unit for displaying the information acquired by the image sensor. In addition, the photoelectric conversion device can use the information acquired by the image sensor to obtain information, and the display unit can display other information. The display unit can be a display unit exposed outside the photoelectric conversion device or a display unit configured in a viewfinder. The photoelectric conversion device can be a digital camera or a digital video camera.

[0125] Figure 12A FIG. 4 is a schematic diagram showing an example of a photoelectric conversion device according to the present embodiment. The photoelectric conversion device 1100 can include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 can include the display device according to the present embodiment. In this case, the display device can not only display the image to be captured but also display environmental information, shooting instructions, and the like. Examples of environmental information are the intensity and direction of external light, the moving speed of the subject, and the possibility that the subject is blocked by an obstacle.

[0126] The timing suitable for shooting is a very short time, so it is preferable to display information as quickly as possible. Therefore, it is preferable to use a display device using the organic light-emitting element of the present invention. This is because the organic light-emitting element has a high response speed. The display device using the organic light-emitting element can be used in devices that require a display speed preferably higher than that of a liquid crystal display device.

[0127] The photoelectric conversion device 1100 includes an optical unit (not shown). The optical unit has a plurality of lenses and forms an image on an image sensor housed in the housing 1104. The focus of the plurality of lenses can be adjusted by adjusting the relative position. This operation can also be performed automatically.

[0128] The display device according to the present embodiment can include red, green, and blue color filters. The red, green, and blue color filters can be arranged in a delta array.

[0129] The display device according to the present embodiment can also be used in the display unit of a portable terminal. At this time, the display unit can have both a display function and an operation function. Examples of portable terminals are portable phones such as smartphones, tablet computers, and head-mounted displays.

[0130] Figure 12BIt is a schematic diagram showing another example of an electronic device according to the present embodiment. The electronic device 1200 includes a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 can accommodate a circuit, a printed board having the circuit, a battery, and a communication unit. The operation unit 1202 can be a button or a touch panel type reaction unit. The operation unit can also be a biometric authentication unit that performs unlocking and the like by authenticating fingerprints. An electronic device including a communication unit can also be regarded as a communication device.

[0131] Figure 13A and Figure 13B It is a schematic diagram showing an example of a display device according to the present embodiment. Figure 13A It shows a display device such as a TV monitor or a PC monitor. The display device 1300 includes a frame 1301 and a display unit 1302. The light-emitting device according to the present embodiment can be used for the display unit 1302. The display device 1300 includes a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to Figure 13A the form shown. The lower side of the frame 1301 can also be used as a base. In addition, the frame 1301 and the display unit 1302 can be bent. In this case, the radius of curvature can be 5000 (inclusive) mm to 6000 (inclusive) mm.

[0132] Figure 13B It is a schematic diagram showing another example of a display device according to the present embodiment. Figure 13B The display device 1310 shown is foldable, that is, the display device 1310 is a so-called foldable display device. The display device 1310 includes a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. Each of the first display unit 1311 and the second display unit 1312 can include a light-emitting device according to the present embodiment. The first display unit 1311 and the second display unit 1312 can also be a seamless display device. The first display unit 1311 and the second display unit 1312 can be divided by the bending point. The first display unit 1311 and the second display unit 1312 can display different images, and can also display an image together.

[0133] Figure 14AIt is a schematic diagram showing an example of a lighting device according to the present embodiment. The lighting device 1400 can include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light source can include an organic light-emitting element according to the present embodiment. The color filter can be a color filter that improves the color rendering property of the light source. When lighting is performed, etc., the light diffusion unit can project the light of the light source over a wide range by effectively diffusing the light. The color filter and the light diffusion unit can be provided on the lighting light emission side. As needed, the lighting device can further include a cover located on the outermost side.

[0134] The lighting device is, for example, a device for illuminating an interior. The lighting device can emit white light, natural white light, or light of any color from blue to red. The lighting device can further include a light control circuit for controlling these light components. The lighting device can further include an organic light-emitting element according to the present invention and a power supply circuit connected to the organic light-emitting element. The power supply circuit is a circuit that converts an AC voltage into a DC voltage. The white color has a color temperature of 4200K, and the natural white color has a color temperature of 5000K. The lighting device can also include a color filter.

[0135] In addition, the lighting device according to the present embodiment can include a heat dissipation unit. The heat dissipation unit radiates the heat inside the device to the outside of the device, and examples are metals and liquid silicone having a high specific heat.

[0136] Figure 14B It is a schematic diagram of an automobile as an example of a moving body according to the present embodiment. The automobile has a taillight as an example of a lighting fixture. The automobile 1500 has a taillight 1501 and can have a form in which the taillight is turned on when a braking operation or the like is performed.

[0137] The taillight 1501 can include an organic light-emitting element according to the present embodiment. The taillight can include a protective member for protecting the organic EL element. There is no limitation on the material of the protective member as long as it is a transparent material having a certain degree of strength, and polycarbonate is preferred. Furan dicarboxylic acid derivatives, acrylonitrile derivatives, etc. can be mixed in the polycarbonate.

[0138] The automobile 1500 can include a vehicle body 1503 and a window 1502 mounted on the vehicle body 1503. This window can be a window for checking the front and rear of the automobile or a transparent display. The transparent display can include an organic light-emitting element according to the present embodiment. In this case, the constituent materials such as the electrodes of the organic light-emitting element are preferably formed of a transparent member.

[0139] The mobile body according to the present embodiment can be a ship, an aircraft, a drone, etc. The mobile body can include a main body and a lighting device installed in the main body. The lighting device can emit light to notify the position of the main body. The lighting device includes an organic light-emitting element according to the present embodiment.

[0140] As described above, when a device using the organic light-emitting element according to the present embodiment is used, stable display with high image quality can be performed even during long-time display.

[0141] Figures 15A to 15C An application example of a display device according to an embodiment of the present invention is shown. The display device according to an embodiment of the present invention can be applied to an information display device such as a viewfinder of a camera, a head-mounted display, or smart glasses.

[0142] Figure 15A FIG. is an example showing a schematic configuration of a display device serving as a viewfinder of an imaging device such as a camera. The display device 1 emits display light 7 and infrared light 8, and the display light and the infrared light pass through an optical member 22 to reach the user's eyeball 6. An imaging device 23 including an image sensor converts the infrared light reflected by the user's eyeball 6 into electrical information, and detects the line of sight based on this information. Instead of providing the imaging device, an image sensor can be provided on the insulating layer of the display device 1 and serve as a display imaging device.

[0143] Figure 15B An example of an imaging device such as a camera is shown. The imaging device 24 includes a viewfinder 25, a display 26, an operation unit 27, and a housing 28. Figure 15A The shown display device is provided in the viewfinder 25.

[0144] Figure 15A An example in which the display light 7 and the infrared light 8 pass through the same optical member 22 is shown. However, different optical members can be provided for the display light and the infrared light respectively. In addition, instead of providing the imaging device, an image sensor can be provided on the substrate of the display device 1 and serve as a display imaging device. The detected line-of-sight information can be used for controlling the display device and various devices connected to the display device, such as focus control of a camera, resolution control of a displayed image, and substitution of button operations.

[0145] The display device according to an embodiment of the present invention can include an imaging device having a light receiving element, and can control a display image on the display device based on line-of-sight information of a user from the imaging device.

[0146] More specifically, the display device can determine a first visual field area that the user is gazing at and a second visual field area other than the first visual field area based on the line-of-sight information. The first visual field area and the second visual field area can be determined by the control device of the display device, or alternatively, the areas determined by an external control device can be received. In the display area of the display device, the display resolution of the first visual field area can be controlled to be higher than that of the second visual field area. That is, the resolution of the second visual field area can be lower than that of the first visual field area.

[0147] In addition, the display area includes a first display area and a second display area different from the first display area, and a higher-priority area is determined from the first display area and the second display area based on the line-of-sight information. The first visual field area and the second visual field area can be determined by the control device of the display device, or alternatively, the areas determined by an external control device can be received. The resolution of the higher-priority area can be controlled to be higher than that of the areas other than the higher-priority area. That is, the resolution of the relatively low-priority area can be low.

[0148] Note that AI can be used to determine the first visual field area or the higher-priority area. The AI can be a model configured to estimate the angle of the line of sight and the distance to the target in front of the line of sight from the image of the eyeball using the image of the eyeball and the actual viewing direction of the eyeball in the image as supervision data. The AI program can be held by the display device, the imaging device, or an external device. If the external device holds the AI program, it is transmitted to the display device via communication.

[0149] When performing display control based on line-of-sight detection, smart glasses that also include an imaging device configured to capture the outside can be preferably applied. The smart glasses can display the captured external information in real time.

[0150] In addition, a first imaging device and a second imaging device can be provided. The first imaging device includes a light-receiving element configured to receive infrared light. The second imaging device for photographing the outside includes a light-receiving element different from the light-receiving element of the first imaging device, and the imaging resolution of the second imaging device can be controlled based on the line-of-sight information of the user of the first imaging device. By setting a low imaging resolution in another area, the amount of information can be reduced compared to the prioritized area. Therefore, it is possible to attempt to reduce power consumption and display latency. The prioritized area can be set as the first imaging area, and the area with a priority lower than that of the first imaging area can be set as the second imaging area.

[0151] Figure 15CIt is a schematic diagram showing an example of smart glasses. The camera display device 29 represented by the smart glasses includes a control unit 30, a transparent display unit 31, and an external camera unit (not shown). If the present invention is applied to smart glasses, both the display device and the external camera device can be controlled based on the detected line-of-sight information, and an attempt is made to reduce power consumption and display latency. For example, by reducing the camera resolution and display resolution of areas other than the area being gazed at by the user in the display area, the amount of information regarding imaging and display can be reduced, and power consumption and display latency can be decreased.

[0152] As described above, according to an embodiment of the present invention, by reducing the situation where visible light emitted by the infrared light emitting element leaks into adjacent pixels, a display device that suppresses deterioration of display quality even when the display device is miniaturized can be provided.

[0153] The present invention is not limited to the above embodiments, and various changes and modifications can be made within the spirit and scope of the present invention. Therefore, in order to inform the public of the scope of the present invention, the appended claims are presented.

[0154] This application claims the priority of Japanese Patent Application No. 2019-195526 filed on October 28, 2019, and Japanese Patent Application No. 2020-163887 filed on September 29, 2020, the entire contents of which are incorporated herein by reference.

[0155] List of reference numerals

[0156] 1: Organic device, 110: Reflective portion (reflective film), 301: Reflective electrode (reflective film), 402: Reflective film, 115: Lower electrode, 307: Lower electrode, 403: Lower electrode, 114: Optical adjustment film, 306: Optical adjustment film, 404: Optical adjustment film, 120: Upper electrode, 201r: First pixel, 201g: Second pixel, 201b: Third pixel.

Claims

1. An organic device, which includes a reflective film disposed on a substrate, a first insulating film configured to cover the reflective film, a plurality of lower electrodes disposed on the first insulating film, a second insulating film configured to cover the peripheral portions of each of the plurality of lower electrodes and the first insulating film between the plurality of lower electrodes, an organic functional film configured to cover the plurality of lower electrodes and the second insulating film, and an upper electrode disposed on the organic functional film, wherein, the potential difference between the upper electrode and the reflective film is lower than the threshold voltage at which the organic functional film operates, wherein the reflective film includes a first reflective portion for a first pixel and a second reflective portion for a second pixel, wherein T1 > T2 and ΔT1 < ΔT2 are satisfied, where T1 represents the thickness of the first insulating film disposed on the central portion of the first reflective portion, T2 represents the thickness of the first insulating film disposed on the central portion of the second reflective portion, ΔT1 represents the step on the surface of the first insulating film on the first reflective portion, and ΔT2 represents the step on the surface of the first insulating film on the second reflective portion.

2. The organic device according to claim 1, wherein, the first insulating film includes a first film and a second film, the first film and the second film are disposed in the central portion of the first reflective portion, and it is the second film rather than the first film that is disposed in the central portion of the second reflective portion.

3. The organic device according to claim 2, wherein, in a region where both the first film and the second film exist, the second film is disposed on the first film.

4. The organic device according to claim 1, wherein, the reflective film further includes a third reflective portion for a third pixel, and wherein T1 > T2 > T3 and ΔT1 < ΔT2 < ΔT3 are satisfied, where T3 represents the thickness of the first insulating film disposed on the central portion of the third reflective portion, and ΔT3 represents the step on the surface of the first insulating film on the third reflective portion.

5. The organic device according to claim 4, wherein, the first insulating film includes a first film, a second film, and a third film, the first film, the second film, and the third film are disposed in the central portion of the first reflective portion, it is the second film and the third film rather than the first film that are disposed in the central portion of the second reflective portion, and it is the third film rather than the first film and the second film that is disposed in the central portion of the third reflective portion.

6. The organic device according to claim 1, wherein, the reflective film includes a plurality of reflective portions, the plurality of reflective portions include a first reflective portion and a second reflective portion, and each of the plurality of reflective portions is disposed below a corresponding one of the plurality of lower electrodes, and each of the plurality of lower electrodes is electrically connected to a corresponding one of the plurality of reflective portions.

7. The organic device according to claim 6, wherein, Each of the plurality of lower electrodes extends into an opening formed in the first insulating film and is electrically connected in the opening to a peripheral portion of a corresponding one of the plurality of reflective portions.

8. The organic device according to claim 6, wherein, each of the plurality of lower electrodes is electrically connected to a peripheral portion of a corresponding one of the plurality of reflective portions through a first conductive plug passing through the first insulating film.

9. The organic device according to claim 6, wherein, in a peripheral portion of the reflective portion, a conductive layer is provided on the reflective film, and each of the plurality of lower electrodes is electrically connected to the conductive layer.

10. The organic device according to claim 9, wherein, the conductive layer is made of a material having a reflectance lower than that of the reflective film.

11. The organic device according to claim 1, wherein, the reflective film is formed of a conductor provided commonly for the plurality of lower electrodes.

12. The organic device according to claim 1, wherein, the reflective film is electrically insulated from the plurality of lower electrodes.

13. The organic device according to claim 12, wherein, the plurality of lower electrodes are electrically connected to a wiring pattern provided adjacent to the reflective film, and the reflective film is insulated from the wiring pattern.

14. The organic device according to claim 13, wherein, the wiring pattern is made of a conductive material having a reflectance lower than that of the reflective film.

15. The organic device according to claim 14, wherein, in the reflective film, the conductive material is formed on at least a part of the reflective film in a peripheral portion of each reflective portion.

16. The organic device according to claim 1, wherein, the reflective film includes a first reflective portion for a first pixel and a second reflective portion for a second pixel, and a gap is provided at least between the first reflective portion and the second reflective portion.

17. The organic device according to claim 13, wherein, a gap is provided at least between the reflective film and the wiring pattern.

18. The organic device according to any one of claims 1 to 17, wherein, the organic device is configured as a display device.

19. A display and imaging device, which comprises: an imaging device; and the organic device according to any one of claims 1 to 17, and the organic device is configured as a display device, wherein, a display image on the display device is controlled based on line-of-sight information of a user provided from the imaging device.

20. An imaging device, which comprises: an optical unit having a plurality of lenses; an image sensor configured to receive light that has passed through the optical unit; and a display unit configured to display an image captured by the image sensor, wherein, the display unit includes the organic device according to any one of claims 1 to 17.

21. An electronic device, which comprises: a display unit including the organic device according to any one of claims 1 to 17; a housing provided with the display unit; and a communication unit provided in the housing and configured to perform external communication.

22. A lighting device, which comprises: a light source, which comprises the organic device according to any one of claims 1 to 17; and one of a light diffusing unit and an optical film, configured to transmit light emitted by the light source.

23. A moving body, which comprises: a lighting fixture, which comprises the organic device according to any one of claims 1 to 17; and a main body, on which the lighting fixture is provided.

24. A method for manufacturing an organic device, characterized in that it comprises: a step of forming a reflective film on a substrate; a step of forming a first insulating film to cover the reflective film; a step of forming a plurality of lower electrodes on the first insulating film; a step of forming a second insulating film to cover the peripheral portion of each of the plurality of lower electrodes and the first insulating film between the plurality of lower electrodes; a step of forming an organic functional film to cover the plurality of lower electrodes and the second insulating film; and a step of forming an upper electrode on the organic functional film, wherein the potential difference applied between the upper electrode and the reflective film is lower than the threshold voltage at which the organic functional film operates, wherein the reflective film comprises a first reflective portion for a first pixel and a second reflective portion for a second pixel, and wherein, in the step of forming the first insulating film, T1>T2 and ΔT1<ΔT2 are satisfied, where T1 represents the thickness of the first insulating film disposed on the central portion of the first reflective portion, T2 represents the thickness of the first insulating film disposed on the central portion of the second reflective portion, ΔT1 represents the step on the surface of the first insulating film at the peripheral portion and the central portion of the first reflective portion, and ΔT2 represents the step on the surface of the first insulating film at the peripheral portion and the central portion of the second reflective portion.

25. The method for manufacturing an organic device according to claim 24, wherein, in the step of forming the first insulating film, the first insulating film is formed such that the first insulating film comprises a first film and a second film, the first film and the second film are disposed in the central portion of the first reflective portion, and the second film rather than the first film is disposed in the central portion of the second reflective portion.

26. The method for manufacturing an organic device according to claim 24, wherein, the reflective film further comprises a third reflective portion for a third pixel, and wherein, T1>T2>T3 and ΔT1<ΔT2<ΔT3 are satisfied, where T3 represents the thickness of the first insulating film disposed on the central portion of the third reflective portion, and ΔT3 represents the step on the surface of the first insulating film at the peripheral portion and the central portion of the third reflective portion.

27. The method for manufacturing an organic device according to claim 26, wherein, In the step of forming the first insulating film, the first insulating film is formed such that the first insulating film includes a first film, a second film, and a third film. The first film, the second film, and the third film are disposed in the central portion of the first reflecting portion. The second film and the third film, rather than the first film, are disposed in the central portion of the second reflecting portion. And the third film, rather than the first film and the second film, is disposed in the central portion of the third reflecting portion.

Images