Non-volatile α-Fe2O3 / TiO2 heterojunction memristors, their fabrication and multi-value storage control methods
By designing α-Fe2O3/TiO2 heterojunction memristors and employing multi-value storage control methods, the problems of complex fabrication and low reliability of existing memristors have been solved, realizing a non-volatile memristor with high stability and high-density multi-value storage.
CN114628581BActive Publication Date: 2026-07-24GUANGXI UNIVERSITY OF TECHNOLOGY
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUANGXI UNIVERSITY OF TECHNOLOGY
- Filing Date
- 2022-03-17
- Publication Date
- 2026-07-24
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Figure CN114628581B_ABST
Abstract
The application provides a nonvolatile alpha-Fe2O3 / TiO2 heterojunction memristor and a preparation and multi-value storage control method thereof, comprising a bottom electrode, an epitaxial TiO2 heterojunction resistive switching layer and an alpha-Fe2O3 heterojunction resistive switching layer are sequentially grown on the bottom electrode, and an upper electrode is deposited on the surface of the alpha-Fe2O3 heterojunction resistive switching layer. The application is a low-cost, high-density nonvolatile alpha-Fe2O3 / TiO2 heterojunction memristor, which has high stability, high reliability, high resistive switching ratio, and bipolar resistive switching storage characteristics. A simple, inexpensive and efficient hydrothermal preparation method is adopted, the controllable design of the alpha-Fe2O3 / TiO2 heterojunction is realized, and a simple and efficient implementation process is provided for the development and application of related materials.
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