Driving substrate and display panel
By employing a dual-gate structure and heterojunction design in the driving substrate, and utilizing active sublayers with different band gaps to form a two-dimensional electron gas and a multi-layer electron conductive channel, the problem of low carrier mobility in metal oxide thin film transistors is solved, enabling high-performance display applications.
CN115799276BActive Publication Date: 2026-07-03WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO LTD
- Filing Date
- 2022-12-26
- Publication Date
- 2026-07-03
Smart Images
Figure CN115799276B_ABST
Abstract
This application discloses a driving substrate and a display panel. The driving substrate includes a substrate, a first gate, a buffer layer, an active layer, a gate insulating layer, a second gate, an interlayer dielectric layer, a source, and a drain. The active layer includes a first active sublayer and a second active sublayer sequentially disposed on the buffer layer. The band gaps of the first and second active sublayers are different. Since the active layer includes a first active sublayer and a second active sublayer with different band gaps, the first and second active sublayers form a heterojunction. Due to the bending of the band gap at the heterojunction interface, a two-dimensional electron gas is formed at the contact interface between the first and second active layers. The two-dimensional electron gas is confined to move within a two-dimensional plane, thereby reducing the scattering effect of ionized impurity centers and thus exhibiting good transport properties, effectively improving the carrier mobility of the driving substrate.
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