Apparatus, system, and method for an elliptical atom object trap

Abstract

The present disclosure provides an atomic object trap apparatus and a method of operating the same. The atomic object trap apparatus includes two or more radio frequency (RF) electrodes formed concentrically in a substantially elliptical shape, and three or more trapping and / or transport (TT) electrode sequences formed concentrically in a substantially elliptical shape. The two or more RF electrodes and the three or more TT electrode sequences define an atomic object trap of a substantially elliptical shape. At least one of the three or more TT electrode sequences is disposed concentrically between the two or more RF electrodes. Each of the RF electrodes and the TT electrode sequences is elliptical in shape such that each of the RF electrodes and the TT electrode sequences includes two substantially parallel longitudinal regions and two cross-arc loop regions, the four regions forming a substantially elliptical shape. The method involves operating a quantum computing system including the exemplary atomic object trap apparatus.

Description

TECHNICAL FIELD

[0001] Various embodiments relate to apparatuses, systems, and methods for atomic object traps. BACKGROUND

[0002] Atomic object traps can use electric fields to trap one or more atomic objects in a potential well. Atomic objects can be trapped for a number of purposes, which can include, for example, mass spectrometry, research, and / or controlling their quantum states. Trapped atomic objects, such as trapped ions, can encode information in their quantum states and act as qubits in quantum computing. Through the efforts, ingenuity, and innovation of the inventors, many of the deficiencies of such prior atomic object traps have been addressed by developing solutions structured in accordance with embodiments of the present invention, many examples of which are described in detail herein. SUMMARY

[0003] Exemplary embodiments provide atomic object traps, atomic object trap apparatuses, quantum computers including atomic object trap apparatuses, quantum computer systems including atomic object trap apparatuses, and the like. In various embodiments, the atomic objects are atoms, ions, ion crystals, and the like. As used herein, an ion crystal is a group of atoms and / or ions (e.g., pairs of ions including qubit atomic objects and sympathetic cooling atomic objects). The provided embodiments are optimized to support the simultaneous trapping of a relatively large number of atomic objects with a relatively small amount of electrical signaling. In exemplary embodiments, the atomic object trap apparatuses are generally elliptical in shape and have enhanced compactness and electrical connectivity. For example, the elliptical shape of the atomic object trap apparatuses enables laser beams, electrical leads, and the like to be shared between different and spatially separated zones and / or electrodes.

[0004] According to an aspect of the present disclosure, an atomic object trap apparatus is provided. The atomic object trap apparatus includes two or more radio frequency (RF) electrodes formed concentrically in a substantially elliptical shape, and three or more trapping and / or transport (TT) electrode sequences formed concentrically in a substantially elliptical shape. The two or more RF electrodes and the three or more TT electrode sequences define an atomic object trap of a substantially elliptical shape. At least one TT electrode sequence is disposed concentrically between the two or more RF electrodes. Each of the substantially elliptical shape RF electrode and TT electrode sequence includes two substantially parallel longitudinal regions and two cross-arc loop regions. In an exemplary embodiment, each of the substantially parallel longitudinal regions of each of the three or more TT electrode sequences is arranged into a plurality of zones, and each of the cross-arc loop regions of the at least one TT electrode sequence disposed concentrically between the two or more RF electrodes includes a plurality of TT electrodes arranged into three or more TT electrode subgroups. In an exemplary embodiment, the TT electrodes of each of the three or more TT electrode subgroups are in electrical communication with each other. In an exemplary embodiment, the plurality of TT electrodes are arranged such that every n-1 TT electrodes are associated with one TT electrode subgroup, where n is greater than 1.

[0005] In an exemplary embodiment, each of the TT electrode subgroups is configured to be independently operated to at least one of: (a) create a plurality of potential wells, or (b) move a potential well. In an exemplary embodiment, creating a plurality of potential wells and moving a potential well are configured such that at least one atomic object within the defined atomic object trap is transported from a first longitudinal region of an RF electrode to a second longitudinal region of the RF electrode via one of the two cross-arc loop regions. In an exemplary embodiment, the at least one atomic object includes an ion crystal. The ion crystal includes a qubit atomic object and a sympathetic cooling (SC) atomic object.

[0006] In example embodiments, the plurality of zones includes a plurality of gate zones and a plurality of auxiliary zones. In example embodiments, each gate zone is disposed between two auxiliary zones, the gate zone is configured for an action to be performed on at least one atomic object within the gate zone (e.g., by application of one or more electromagnetic fields), and the auxiliary zones are configured for stabilizing the at least one atomic object during a transport operation of the at least one atomic object. As used herein, stabilizing the at least one atomic object includes holding the at least one atomic object such that quantum information / data stored and / or encoded by the qubit atomic object is not disturbed or lost. In example embodiments, the action performed includes at least one of the following operations: (a) a splitting operation, (b) a combining operation, or (c) an exchange operation, the action being caused at least in part by a manipulation source. In example embodiments, the manipulation source is a laser beam configured to serve as the manipulation source for one or more gate zones. In example embodiments, each gate zone of the at least one sequence of TT electrodes disposed concentrically between the two or more RF electrodes includes at least five TT electrodes. In example embodiments, each auxiliary zone of the at least one sequence of electrodes disposed concentrically between the two or more RF electrodes includes at least three TT electrodes.

[0007] In example embodiments, at least one of the two cross-arc ring line regions of the at least one sequence of TT electrodes disposed concentrically between the two or more RF electrodes includes a loading aperture configured for loading an atomic object into the ion trap. In example embodiments, (a) the two or more RF electrodes are disposed between a first sequence of TT electrodes and a third sequence of TT electrodes, (b) the two or more RF electrodes form at least one elliptical gap, and (c) a second sequence of TT electrodes is disposed within the elliptical gap. In example embodiments, the ion trap device is part of a trapped atomic object quantum computer.

[0008] According to another aspect of the present disclosure, an atomic object trap device is provided. The atomic object trap device includes a plurality of radio frequency (RF) electrodes of an elliptical shape and a plurality of sequences of trapping and / or transport (TT) electrodes of an elliptical shape. The plurality of RF electrodes and the plurality of sequences of TT electrodes define an ion trap. The defined atomic object trap includes a longitudinal gate region and two ring line regions. In example embodiments, the longitudinal gate region is arranged into a plurality of zones, and the two ring line regions are configured to be operated so as to cause an atomic object within the atomic object trap to be transported from a first zone of the plurality of zones to a second zone of the plurality of zones. In example embodiments, each of the two ring line regions includes a plurality of TT electrodes disposed between RF electrodes, the plurality of TT electrodes being energized to generate a plurality of electric potentials.

[0009] In an example embodiment, the plurality of TT electrodes are arranged into three or more TT electrode subgroups. In an example embodiment, the TT electrodes of each TT electrode subgroup are in electrical communication with each other and are energized together. In an example embodiment, the plurality of TT electrodes are arranged such that every nth-1 TT electrode is associated with one TT electrode subgroup, where n is greater than 1. In an example embodiment, each TT electrode subgroup is configured to be independently operated to at least one of: (a) create a plurality of potential wells, or (b) move a potential well. For example, the created potential wells can be dynamic. In an example embodiment, creating a plurality of potential wells and moving a potential well are configured such that at least one atomic object within the defined atomic object trap is transported from a first longitudinal region of the RF electrode to a second longitudinal region of the RF electrode. In an example embodiment, the at least one atomic object comprises an ion crystal. The ion crystal comprises a qubit atomic object and a sympathetic cooling (SC) atomic object.

[0010] In an example embodiment, the plurality of zones comprises a plurality of gate zones and a plurality of auxiliary zones. In an example embodiment, each gate zone is disposed between two auxiliary zones, the gate zone is configured for an action to be performed on at least one atomic object within the gate zone, and the auxiliary zones are configured for stabilizing the at least one atomic object during a transport operation of the at least one atomic object. In an example embodiment, the performed action comprises at least one of: (a) a splitting operation, (b) a combining operation, or (c) an exchange operation, the action being at least partially caused by a manipulation source. In an example embodiment, the manipulation source is a laser beam. The laser beam is configured to serve as a manipulation source for one or more gate zones. In an example embodiment, at least one of the two loop regions of the defined atomic object trap comprises a loading hole configured for loading an atomic object into the atomic object trap. In an example embodiment, the atomic object trap device is part of a trapped atomic object quantum computer.

[0011] According to yet another aspect of the present disclosure, a method of operating a quantum computing system including an atomic object trap apparatus is provided. The method includes loading a plurality of atomic objects through a loading aperture located at a cross-arc loop region of a trapping and / or transport (TT) electrode sequence, where the TT electrode sequence is substantially elliptical in shape and disposed between two substantially elliptical shaped radio frequency (RF) electrodes. Each substantially elliptical shaped TT electrode sequence and RF electrode includes two substantially parallel longitudinal regions and two cross-arc loop regions. The method further includes cooling the plurality of atomic objects using a cooling laser beam, detecting an amount of fluorescence emitted by the plurality of atomic objects (e.g., emitted in response to cooling of the atomic objects, and / or emitted as part of the cooling of the atomic objects), and transporting the plurality of atomic objects. The transporting generates at least one electric potential configured to cause loading of a second plurality of atomic objects through the loading aperture.

[0012] According to yet another example embodiment of the present disclosure, an apparatus is provided. The apparatus includes means for loading a plurality of atomic objects through a loading aperture located at a cross-arc loop region of a trapping and / or transport (TT) electrode sequence, where the TT electrode sequence is substantially elliptical in shape and disposed between two substantially elliptical shaped radio frequency (RF) electrodes. Each substantially elliptical shaped TT electrode sequence and RF electrode includes two substantially parallel longitudinal regions and two cross-arc loop regions. The apparatus includes means for cooling the plurality of atomic objects. The apparatus includes means for detecting an amount of fluorescence emitted by the plurality of atomic objects as part of the cooling process. The apparatus includes means for transporting the plurality of atomic objects. The transporting generates at least one electric potential configured to cause loading of a second plurality of atomic objects through the loading aperture. BRIEF DESCRIPTION OF DRAWINGS

[0013] Thus, having generally described the invention, a brief description of the drawings will be provided, which are not necessarily drawn to scale, and in which:

[0014] FIG. 1 A schematic of a quantum computer system including an atomic object trap apparatus according to an example embodiment is provided;

[0015] FIG. 2A A top view or plan view of a portion of an atomic object trap having an example architecture according to an example embodiment is provided;

[0016] FIG. 2B A top view or plan view of a portion of an atomic object trap having an example architecture according to an example embodiment is provided;

[0017] FIG. 2CA top view or plan view of a portion of an atomic object trap having an exemplary architecture according to exemplary embodiments is provided;

[0018] FIG. 3 is a flowchart showing performed operations according to exemplary embodiments;

[0019] FIG. 4 A schematic of an exemplary controller that can be used according to exemplary embodiments is provided; and

[0020] FIG. 5 A schematic of an exemplary computing entity that can be used according to exemplary embodiments is provided. DETAILED DESCRIPTION

[0021] The present application now will be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the applications are shown. Indeed, the applications can be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. The term "or" (also "and / or") is used herein in the alternative (either / or) and conjunctive sense (both / and) unless otherwise indicated. The terms "exemplary" and "example" are used herein to mean an example or illustration, and not an ideal or preferred embodiment. The terms "generally" and "about" are used herein to mean within engineering and / or manufacturing tolerances and / or within user measurement capabilities. Like numbers refer to like elements throughout.

[0022] Exemplary quantum computer system

[0023] FIG. 1A schematic of an exemplary quantum computer system 100 including an atomic object trap device and / or package 50 according to exemplary embodiments is provided. For example, the atomic object trap device and / or package 50 of the quantum computer system 100 can include an elliptical atomic object trap according to embodiments provided in the present disclosure. In various embodiments, the quantum computer system 100 includes a computing entity 10 and a quantum computer 110. In various embodiments, the quantum computer 110 includes a controller 30, a cryostat and / or vacuum chamber 40 that encloses the atomic object trap device and / or package 50, and one or more manipulation sources 60. In exemplary embodiments, the one or more manipulation sources 60 can include one or more lasers (e.g., optical lasers, microwave sources, etc.). In various embodiments, the one or more manipulation sources 60 are configured to manipulate and / or induce controlled quantum state evolution of one or more atomic objects within the atomic object trap of the atomic object trap device and / or package 50. For example, in exemplary embodiments in which the one or more manipulation sources 60 include one or more lasers 66, the lasers can provide one or more laser beams to the atomic object trap of the atomic object trap device and / or package 50 within the cryogenic and / or vacuum chamber 40. In various embodiments, the quantum computer 110 includes one or more voltage sources 55. For example, the voltage sources 55 can include a plurality of voltage drivers and / or voltage sources and / or at least one RF driver and / or voltage source. The voltage sources 55 can be electrically coupled to corresponding electrodes of the atomic object trap device and / or package 50 via corresponding leads.

[0024] In various embodiments, the computing entity 10 is configured to allow a user to provide input to the quantum computer 110 (e.g., via a user interface of the computing entity 10) and receive output from the quantum computer 110, view the output, etc. The computing entity 10 can communicate with the controller 30 of the quantum computer 110 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication. In exemplary embodiments, the computing entity 10 can translate, configure, format, etc. information / data, quantum computing algorithms, etc. into a computational language, executable instructions, command sets, etc. that the controller 30 can understand, execute, process, and / or implement. Likewise, the computing entity 10 can translate, configure, format, etc. information / data, commands, quantum computing results, and / or quantum information provided by the controller 30 into information / data that the computing entity 10 can understand, execute, process, and / or implement.

[0025] In various embodiments, controller 30 is configured to control voltage source 55, cryogenic systems and / or vacuum systems that control temperature and pressure within cryogenic chamber and / or vacuum chamber 40, manipulation source 60, and / or control various environmental conditions (e.g., temperature, pressure, etc.) within cryogenic chamber and / or vacuum chamber 40 and / or is configured to other systems that manipulate and / or cause controlled quantum state evolution of one or more atomic objects within atomic object trap of atomic object trap apparatus and / or package 50. In various embodiments, atomic objects trapped within atomic object trap of atomic object trap apparatus and / or package 50 are used as qubits of quantum computer 110.

[0026] In various embodiments, manipulation source 60 includes lasers and laser beams 66A-C that are delivered to atomic object trap apparatus and / or package 50. It should be appreciated that laser beams 66A-C are shown for informational purposes and are not limited to indicating that manipulation source can include only three laser beams. In various embodiments, manipulation source 60 includes a plurality of lasers and laser beams. In various embodiments, manipulation source 60 is configured to provide one or more regions and / or areas of an elliptical atomic object trap of atomic object trap apparatus and / or package 50. For example, manipulation source 60 can include laser beam 66A that can be provided to one region of the elliptical atomic object trap and another spatially separated region of the elliptical atomic object trap.

[0027] Similarly, voltage source 55 can include a plurality of voltage drivers and / or voltage sources and / or at least one RF driver and / or voltage source. One or more voltage drivers and / or voltage sources can be configured to operate and / or be connected to more than one electrode of an elliptical atomic object trap of atomic object trap apparatus and / or package 50. For example, one voltage driver and / or voltage source of voltage source 55 can be configured to operate a subset of electrodes of the elliptical atomic object trap.

[0028] Exemplary atomic object trap apparatus

[0029] FIG. 2ATop-view or plan view of an elliptical atomic object trap 200 of an atomic object trap device and / or package 50 according to an exemplary embodiment is provided. In various embodiments, the atomic object trap 200 is generally and / or substantially elliptical in shape, wherein the major axis of the ellipse defines a longitudinal axis 205 of the atomic object trap 200. In various embodiments, the elliptical atomic object trap 200 is configured to trap (e.g., via an electric field) a plurality of atomic objects. In various embodiments, the atomic objects may be atoms, ions, ionic crystals, etc. In various embodiments, an ionic crystal is a group of atoms and / or ions including and / or containing qubit atoms and / or ions and at least one inductively cooled (SC) atom and / or ion. In various embodiments, the atomic object trap device and / or package 50 may include an atomic object trap chip and / or substrate on which the elliptical atomic object trap 200 is defined or fabricated. In various embodiments, the elliptical atomic object trap 200 is a surface atomic object trap. For example, the elliptical atomic object trap 200 may be a surface Paul trap. like FIG. 2A As shown, the elliptical atom object trap 200 is generally elliptical in shape. For example, the elliptical atom object trap 200 includes a longitudinally gated region 210 and two trans-arc loop regions 220A-B, these three regions together forming a generally elliptical shape. The longitudinally gated region 210 may extend along the longitudinal axis 205 of the elliptical atom object trap 200. In various exemplary embodiments, the elliptical atom object trap 200 may include two or more radio frequency (RF) electrodes. For example, FIG. 2A The top view of the elliptical atom object trap 200 provided illustrates an elliptical atom object trap 200 comprising two radio frequency (RF) electrodes concentrically formed in a generally elliptical shape. Specifically, the elliptical atom object trap 200 includes an outer RF electrode 230 and an inner RF electrode 240. In various other embodiments, the elliptical atom object trap 200 may include multiple RF electrodes. Within a longitudinally gated region 210, the RF electrodes 230, 240 may be generally parallel to each other and / or generally parallel to the longitudinal axis 205.

[0030] Each RF electrode 230 and 240 can be generally elliptical in shape. For example, FIG. 2AThe outer RF electrode 230 is shown to include two generally parallel longitudinal regions and two cross-arc loop-line regions. Specifically, the two generally parallel longitudinal regions are located within the longitudinal gating region 210 of the elliptical atom-object trap 200, and each cross-arc loop-line region is located in the loop-line region 220A or 220B of the elliptical atom-object trap 200. That is, a cross-arc loop-line region of the RF electrode can refer to a portion of the RF electrode that is located within the loop-line region 220 of the elliptical atom-object trap 200, and a generally parallel longitudinal region of the RF electrode can refer to a portion of the RF electrode that is located within the longitudinal gating region 210 of the elliptical atom-object trap 200. The two generally parallel longitudinal regions can be generally parallel to the longitudinal axis 205 of the elliptical atom-object trap 200. The two cross-arc loop-line regions can be generally transverse and / or intersect the longitudinal axis 205 of the elliptical atom-object trap 200. As will be appreciated, the two generally parallel longitudinal regions and the two cross-arc loop-line regions of the outer RF electrode 230 form a complete elliptical loop, thereby defining the outer RF electrode 230.

[0031] Similar to the outer RF electrode 230, the inner RF electrode 240 can be generally elliptical in shape. For example, the inner RF electrode 240 also includes two generally parallel longitudinal regions and two cross-arc loop-line regions. In various example embodiments, the inner RF electrode 240 can be formed concentrically with the outer RF electrode 230. That is, the inner RF electrode 240 does not intersect the outer RF electrode 230. Because the inner RF electrode 240 can be formed concentrically with the outer RF electrode 230, the two generally parallel longitudinal regions of the inner RF electrode 240 and the two generally parallel longitudinal regions of the outer RF electrode 230 can also be parallel to each other and parallel to the longitudinal axis 205 of the elliptical atom-object trap 200. Likewise, the two cross-arc loop-line regions of the inner RF electrode 240 and the two cross-arc loop-line regions of the outer RF electrode 230 can cross the same angle and / or exhibit the same concavity such that the inner RF electrode 240 and the outer RF electrode 230 are concentric, and can also be generally transverse and / or intersect the longitudinal axis 205 of the elliptical atom-object trap 200.

[0032] In various exemplary embodiments, two or more RF electrodes (e.g., outer RF electrode 230 and inner RF electrode 240) can be fabricated above the upper surface of the atom object trap chip and / or substrate of the atom object trap apparatus and / or package 50. In various embodiments, other materials (e.g., dielectrics, insulators, shields, etc.) can be formed between the atom object trap chip and / or substrate and the two or more RF electrodes (and / or other elliptical atom object trap 200 components). In various embodiments, the RF electrodes 230, 240 can be made of a conductive material (e.g., copper, silver, gold, etc.) or an alloy of two or more conductive materials selected as suitable for conducting and / or emitting appropriate signals. In various embodiments, the RF electrodes 230, 240 can be made of copper, for example. In exemplary embodiments, the cross-sectional area of the RF electrodes can be determined and / or modified to enable the conduction of electrical currents (e.g., from about 0.01 A to about 10.0 A) oscillating at RF frequencies (e.g., from about 3 Hz to 0.3 GHz).

[0033] In various embodiments, the radial depth (e.g., the dimension in the x-y plane) and / or the thickness (e.g., the dimension of the RF electrode in the z-direction) of the outer RF electrode 230 and the inner RF electrode 240 can vary according to what is suitable for a particular application. In exemplary embodiments, each RF electrode 230, 240 can be configured to each have a radial depth of 80 pm. The radial depth dimension can also be defined as the radial dimension of each electrode from the center of the elliptical atom object trap 200. For example, the radial depth dimension can be substantially the y-dimension in the longitudinal gating region 210 and the x-dimension at the end of the ring line region 220. Likewise, the circumferential width dimension can also be defined as the dimension perpendicular to the radial depth dimension and substantially along the length of the elliptical shape of the elliptical atom object trap 200. For example, the circumferential width dimension can be substantially the x-dimension in the longitudinal gating region 210 and the y-dimension at the end of the ring line region 220.

[0034] In various example embodiments, the outer RF electrode 230 and the inner RF electrode 240 can be separated (e.g., insulated) from each other by an elliptical gap. In example embodiments, the elliptical gap separating the outer RF electrode 230 and the inner RF electrode 240 can be configured to have a radial depth of 80 pm, i.e., there is a radial distance of at least 80 pm between the two RF electrodes 230, 240. In example embodiments, the elliptical gap can be at least partially filled with an insulating material (e.g., a dielectric material). In various embodiments, the dielectric material can be silicon dioxide (e.g., formed by thermal oxidation) and / or other dielectric and / or insulating materials. In various example embodiments, the arrangement and geometry of the RF electrodes 230, 240 can be configured to produce an elliptical trapping region located about 70 pm above the surface of the atomic object trap (e.g., in the positive z-direction) and above the elliptical gap between the RF electrodes 230, 240. In various embodiments, the elliptical trapping region can be a three-dimensional volume above the elliptical atomic object trap 200 in which atomic objects are trapped and / or contained. The elliptical shape of the elliptical trapping region can be defined to coincide with, be an extrusion of, and / or be substantially identical to the elliptical gap between the RF electrodes 230, 240. In various example embodiments, the elliptical atomic object trap 200 can be configured to trap at least one atomic object in a portion of the elliptical trapping region. In various embodiments, RF signals can be applied to the two or more RF electrodes to generate electric and / or magnetic fields that are used to hold one or more atomic objects trapped within the elliptical trapping region. The electric and / or magnetic fields can be generated in a direction transverse to the elliptical length of the RF electrodes.

[0035] In various example embodiments, the elliptical atomic object trap 200 can include three or more generally elliptical shaped transport and / or trapping (TT) electrode sequences, with at least one such TT electrode sequence disposed between the RF electrodes. For example, FIG. 2AAn elliptical atom-object trap 200 is shown that includes three generally elliptical shaped transport and / or trapping (TT) electrode sequences: a first TT electrode sequence (hereinafter also referred to as outer TT electrode sequence) disposed outside of the outer RF electrode 230, a second TT electrode sequence disposed within the elliptical gap between the RF electrodes 230, 240, and a third TT electrode sequence (hereinafter also referred to as inner TT electrode sequence) disposed radially inside the inner RF electrode 240. In exemplary embodiments, the elliptical atom-object trap 200 includes multiple TT electrode sequences. Like the RF electrodes 230, 240, each TT electrode sequence can be generally elliptical in shape. For example, each TT electrode sequence can include two generally parallel longitudinal regions and two cross-arc loop-line regions. The two generally parallel longitudinal regions of each TT electrode sequence can be located and / or defined within the longitudinal gating region 210 of the elliptical atom-object trap 200, and each cross-arc loop-line region can be located and / or defined within the loop-line region 220 of the elliptical atom-object trap 200. Each TT electrode sequence can also be formed concentrically with the RF electrodes; that is, each of the elliptical atom-object trap 200 components (e.g., RF electrodes and TT electrode sequences) can be concentric with respect to one another. Thus, the longitudinal regions of all of the RF electrodes and TT electrode sequences can be parallel to the longitudinal axis 205 of the elliptical atom-object trap 200, and the cross-arc loop-line regions of all of the RF electrodes and TT electrode sequences can span the same angle and / or exhibit the same concavity, and can be transverse and / or intersect the longitudinal axis 205 of the elliptical atom-object trap 200.

[0036] In various exemplary embodiments, the upper surface (e.g., in the positive z-direction) of the elliptical atom-object trap 200 can have a planarized topology. For example, the upper surface (e.g., in the positive z-direction) of each RF electrode and each TT electrode sequence can be substantially co-planar. In various exemplary embodiments, the upper surface of each RF electrode and each TT electrode sequence can also be substantially co-planar or substantially flush with the upper surface of the atom-object trap apparatus and / or package 50. Likewise, in exemplary embodiments, the thickness (e.g., in the positive z-direction) of each RF electrode and each TT electrode sequence can be approximately equal. In one exemplary embodiment, the thickness of the RF electrodes 230, 240 and TT electrode sequences is in the range of approximately 0.1-20 pm. In different exemplary embodiments, the thickness (e.g., in the z-direction) of the outer TT electrode sequences and the inner TT electrode sequences is greater than the thickness of the RF electrodes 230, 240 and the at least one TT electrode sequence disposed between the RF electrodes, which have substantially the same thickness. In various exemplary embodiments, the three or more TT electrode sequences can have the same or substantially similar radial depth (e.g., dimension in the x-y plane) as the RF electrodes. For example, each TT electrode sequence can be configured to each have a radial depth of 80 pm. In exemplary embodiments, the at least one TT electrode sequence disposed between the RF electrodes can be configured to have a radial depth equal to or less than the radial depth of the elliptical gap separating the outer RF electrodes 230 and the inner RF electrodes 240. For example, the elliptical gap can be configured to have a radial depth of 80 pm and partially filled with an insulating material, resulting in the at least one TT electrode sequence disposed therein being configured to have a radial depth less than 80 pm.

[0037] In various example embodiments, there can be a circumferential gap between adjacent or neighboring TT electrodes in each TT electrode sequence. In example embodiments, each circumferential gap can be a space that is empty and / or at least partially filled with a dielectric material to prevent electrical communication between adjacent or neighboring TT electrodes. In example embodiments, each circumferential gap can be configured to be about 1-10 pm. In various example embodiments, each TT electrode sequence and adjacent or neighboring RF electrodes can be electrically insulated from each other to prevent electrical communication. For example, a dielectric material and / or insulating material having a radial depth of about 1-10 pm can be positioned at a location between a TT electrode sequence and an RF electrode to prevent electrical communication. In various embodiments, a TT voltage can be applied to the TT electrodes in each TT electrode sequence to hold and / or cause transport of one or more atomic objects trapped within the elliptical trapping region. For example, the TT voltage in combination with an RF signal applied to two or more RF electrodes can generate an electric field and / or a magnetic field configured to hold and / or cause transport of one or more trapped atomic objects.

[0038] FIG. 2B An example top view or plan view of a portion of the annular line region 220 (such as FIG. 2A shown in FIG. 2) is shown. As shown, the annular line region 220A-B is configured to transport atomic objects trapped in the elliptical atomic object trap 200 from one region to another region. For example, the elliptical atomic object trap 200 can trap an atomic object in a portion of a first generally parallel longitudinal region of the elliptical trapping region, and the elliptical atomic object trap 200 can be configured to transport the atomic object through the annular line region 220 to another portion located in a second generally parallel longitudinal region of the elliptical trapping region. In various example embodiments, a particular annular line region 220 (e.g., 220A or 220B) can be selected based on a distance that an atomic object is to be transported. For example, when an atomic object is initially located at and / or is to be transported to a portion located at the right end of the longitudinal gating region 210, the controller 30 can select the annular line region 220B over the annular line region 220A to transport the atomic object. FIG. 2B FIG. 2A As shown, the right annular line region 220B (e.g., in the y-direction) is more similar to FIG. 2B the annular line region 220 shown in FIG. 2. However, regardless of which side of the elliptical atomic object trap the annular line region 220 is disposed, the annular line region can be configured in the same and / or similar manner. FIG. 2A The architecture shown and described in the annular line region 220 of FIG. 2 can be applicable to both annular line regions 220A and 220B of FIG. 2. In general, each annular line region 220 can be configured to transport atomic objects trapped in the elliptical atomic object trap 200 from one region to another region. For example, the elliptical atomic object trap 200 can trap an atomic object in a portion of a first generally parallel longitudinal region of the elliptical trapping region, and the elliptical atomic object trap 200 can be configured to transport the atomic object through the annular line region 220 to another portion located in a second generally parallel longitudinal region of the elliptical trapping region. In various example embodiments, a particular annular line region 220 (e.g., 220A or 220B) can be selected based on a distance that an atomic object is to be transported. For example, when an atomic object is initially located at and / or is to be transported to a portion located at the right end of the longitudinal gating region 210, the controller 30 can select the annular line region 220B over the annular line region 220A to transport the atomic object.

[0039] ​Each loop region 220 can include a cross-arc loop region of two or more RF electrodes and a cross-arc loop region of three or more TT electrode sequences. For example, FIG. 2B Cross-arc loop regions of outer RF electrodes 230 and inner RF electrodes 240 and a cross-arc loop region of second TT electrode sequences 250 disposed between the RF electrodes are shown. As previously discussed, these cross-arc loop regions can be concentric (e.g., spanning the same angle and / or exhibiting the same concavity) and the cross-arc loop region of second TT electrode sequences 250 is disposed in the gap between the cross-arc loop regions of outer RF electrodes 230 and inner RF electrodes 240. As previously described, in various exemplary embodiments, second TT electrode sequences 250 can be at least one TT electrode sequence.

[0040] Second TT electrode sequences 250 disposed between the RF electrodes include a plurality of TT electrodes. For example, second TT electrode sequences 250 include TT electrodes 222, 224, and 226 in a cross-arc loop region of second TT electrode sequences 250. In various exemplary embodiments, the plurality of TT electrodes of the cross-arc loop region of second TT electrode sequences 250 disposed between the RF electrodes can be arranged into three or more TT electrode subgroups. For example, FIG. 2BThe plurality of TT electrodes is shown arranged in three TT electrode subgroups, labeled "A", "B", and "C". For example, subgroup A can include TT electrodes labeled with "A", such as TT electrode 222; subgroup B can include TT electrodes labeled with "B", such as TT electrode 224; and subgroup C can include TT electrodes labeled with "C", such as TT electrode 226. As is clear from the figure, the plurality of TT electrodes is arranged such that every other electrode belongs to the same subgroup. In various exemplary embodiments, the plurality of TT electrodes can be arranged in n subgroups, such that every n-1 electrodes belong to the same subgroup (where n is greater than 1). In exemplary embodiments, n is at least three, as the inventors have recognized that at least three energized TT electrodes are needed to create and move a single potential well. In various exemplary embodiments, each TT electrode of a subgroup is in electrical communication with other TT electrodes of the same subgroup. For example, a TT electrode labeled with "A" belonging to subgroup A is in electrical communication with every other TT electrode belonging to subgroup A that is also labeled with "A". In various exemplary embodiments, TT electrodes belonging to a subgroup are electrically shorted together to allow electrical communication with one another. Due to the electrical shorting between TT electrodes of a subgroup, a subgroup of TT electrodes can be operated by one voltage waveform. For example, a subgroup of TT electrodes can be connected and / or configured to be in communication with a voltage driver and / or voltage source in voltage source 55, such that one voltage driver and / or voltage source can operate the subgroup of TT electrodes. Thus, in exemplary embodiments, the number of voltage sources 55 required to operate the loopline region can correspond to the number of subgroups. For example, FIG. 2B The three or more TT electrode subgroups in the shown loopline region 220 can be operated by three or more voltage waveforms. For example, FIG. 2B The shown loopline region 220 can be connected and / or configured to be in communication with at least three voltage drivers and / or voltage sources of voltage source 55. Specifically, the electric and / or magnetic fields generated at least in part by the voltages applied across all three or more TT electrode subgroups can trap at least one atomic object in one of a plurality of potential wells above the elliptical gap between the upper surface of second TT electrode sequence 250 and / or the RF electrode.

[0041] In various embodiments, the TT electrode subgroups can be operated to move a plurality of potential wells in order to transport at least one atomic object from a region of the elliptical trapping region in the longitudinal gating region 210 to another region of the elliptical trapping region in the longitudinal gating region 210. In an example embodiment, the TT electrode subgroups can be operated to transport the at least one atomic object from a first generally parallel longitudinal region of the elliptical trapping region to a second generally parallel longitudinal region of the elliptical trapping region, the two generally parallel longitudinal regions being portions of the elliptical trapping region located within the longitudinal gating region 210. As previously described, the elliptical trapping region can be a three-dimensional volume above the elliptical atomic object trap 200 within which atomic objects are trapped and / or contained, and can be located above (e.g., in the positive z-direction) the TT electrode sequence 250 disposed between the RF electrodes. For example, the TT voltage across three or more TT electrode subgroups can be raised or lowered to facilitate transport of the at least one atomic object and / or to block further transport of the at least one atomic object.

[0042] In various example embodiments, the loop region 220 can also include a loading aperture 280 configured for loading atomic objects into the elliptical atomic object trap 200. The loading aperture 280 can be a through-hole extending through the elliptical atomic object trap 200 and through the atomic object trap chip and / or substrate on which the elliptical atomic object trap 200 is defined to allow an atomic object source (e.g., an effusive oven) to be disposed below the atomic object trap device and / or package 50 such that atomic objects from the atomic object source can travel through the loading aperture 280 into the loop region 220. Once an atomic object passes through the loading aperture 280 into the loop region 220, the atomic object can be ionized and, as a result of the electric fields and / or corresponding potentials generated by the two or more RF electrodes and three or more TT electrode sequences, the resulting ionized atomic object can be trapped. In an example embodiment, an atomic object can enter the loop region 220 via the loading aperture 280 and interact with one of the manipulation sources 60, which can ionize the atomic object such that the resulting atomic object is trapped within the elliptical atomic object trap 200. In various example embodiments, the loop region 220 can be configured to receive atomic objects through the loading aperture 280, stabilize the atomic objects within the loop region 220 such that the atomic objects can be manipulated (e.g., initialized and / or ensured to be in a known initial quantum state) via one or more manipulation sources 60, etc.

[0043] In an exemplary embodiment, the loading TT electrodes 256A and 256B are TT electrodes positioned adjacent to the loading hole 280. For example, the loading hole 280 may be a through-hole at least partially disposed within the loading TT electrodes 256A and 256B. In various embodiments, the loading TT electrodes 256A and 256B are controlled independently (e.g., not part of subgroups A, B, or C). FIG. 2B In the exemplary embodiment shown, TT electrodes disposed on and / or adjacent to either side of the loading TT electrodes 256A and 256B are assigned to subgroup A. However, in various embodiments, TT electrodes disposed on the first side of the loading TT electrodes (e.g., adjacent to or near the loading TT electrode 256A) may be assigned to the first subgroup (e.g., subgroup A), and TT electrodes disposed on the second side of the loading TT electrodes (e.g., adjacent to or near the loading TT electrode 256B) may be assigned to different subgroups (e.g., subgroup B or C).

[0044] As described above, the loop region 220 may include a cross-arc loop region consisting of an outer TT electrode sequence and an inner TT electrode sequence. The outer TT electrode sequence is arranged radially outward from the outer RF electrode 230, and the inner TT electrode sequence is arranged radially inward from the inner RF electrode 240. FIG. 2A As roughly shown in the diagram. The outer TT electrode sequence and the inner TT electrode sequence each comprise a plurality of TT electrodes. In various exemplary embodiments, one TT electrode of the outer TT electrode sequence and one TT electrode of the inner TT electrode sequence may correspond to n TT electrodes of the TT electrode sequence 250 disposed between the RF electrodes, where n is greater than 1. In exemplary embodiments, n is at least three. Thus, one outer TT electrode and one inner TT electrode may correspond to at least three TT electrodes and may be configured to facilitate the generation, stabilization, and movement of a single potential well over these at least three TT electrodes. In various other exemplary embodiments, the number of outer TT electrodes and the number of inner TT electrodes corresponding to n TT electrodes are adjusted based on the curvature of the electrodes. For example, due to the curved geometry, the inner circumferential width (e.g., a dimension in the xy plane) of each TT electrode of the second TT electrode sequence 250 is smaller than the outer circumferential width of each TT electrode, so the number of outer TT electrodes corresponding to at least three TT electrodes may be greater than the number of inner TT electrodes. In exemplary embodiments, the outer TT electrode sequence and the inner TT electrode sequence may be operated independently of the second TT electrode sequence 250 disposed between the RF electrodes 230, 240. Specifically, the outer TT electrode and the inner TT electrode can be operated by voltage waveforms that are different from and / or independent of the three or more voltage waveforms that operate the three or more TT electrode subgroups disposed between the RF electrodes 230, 240.

[0045] The size of each outer TT electrode and inner TT electrode can be adjusted so that one outer TT electrode and one inner TT electrode correspond to at least three TT electrodes of the second TT electrode sequence 250. Returning to FIG. 2A The two outer TT electrodes at the end of each loop wire region (e.g., the two outer TT electrodes at each end of the longitudinal axis 205 of the elliptical atomic object trap 200) can also be configured to have a reduced radial depth. The width of these outer TT electrodes at least at the end of each loop wire region can be reduced as shown to reduce interference with electrical signals conducted through the outer RF electrodes 230, inner RF electrodes 240, and / or electrical leads (e.g., in electrical communication with the RF electrodes 230, 240 and / or one or more TT electrodes) that extend beneath the RF and / or TT electrodes of the elliptical atomic object trap 200 (e.g., at the ends of the elliptical atomic object trap 200). For example, in some embodiments, the influence of the electric fields generated by the RF electrodes 230 and 240 can extend beneath the elliptical atomic object trap 200, and reducing the radial dimension of these outer TT electrodes by a configured amount can prevent and / or reduce such influence beneath the elliptical atomic object trap 200. In various example embodiments, the size of the outer TT electrodes and inner TT electrodes can be determined and / or modified so as to enable the generation of an electric potential over the corresponding at least three TT electrodes of the second TT electrode sequence 250.

[0046] With continued reference to FIG. 2C , an example portion of the longitudinal gating region 210 of the elliptical atomic object trap 200 is shown. The longitudinal gating region 210 can include generally parallel longitudinal regions of two or more RF electrodes and generally parallel longitudinal regions of three or more TT electrode sequences. For example, FIG. 2C The generally parallel longitudinal regions of the RF electrodes 230, 240 and TT electrode sequences 250, 260, 270 are shown in FIG. 2C Only a portion of the longitudinal gating region 210 is provided rather than the entire longitudinal gating region 210 such as FIG. 2A is shown. In example embodiments, the longitudinal gating region 210 can be generally similar to, include, and / or be the same as a longitudinal ion trap, such as those described in co-pending U.S. Patent Application 16 / 717,602, the contents of which are incorporated by reference herein.

[0047] In various example embodiments, the longitudinal gating region 210 can be arranged into a plurality of zones. Thus, each generally parallel longitudinal region of the three TT electrode sequences 250, 260, 270 can also be arranged into a plurality of zones. For example, FIG. 2CA portion of the longitudinal gating region 210 is shown arranged into three zones 214A, 212A, and 214B in the upper half and three zones 214C, 212B, and 214D in the lower half. Each zone can include a portion of each of the two or more RF electrodes and a portion of the three or more TT electrode sequences. Each zone can also include a portion of the elliptical trapping region. As previously mentioned, the elliptical trapping region can be a three-dimensional volume above the elliptical atomic object trap 200 in which atomic objects are trapped and / or contained, and can be positioned specifically above at least one TT electrode sequence disposed between the RF electrodes. Thus, an atomic object trapped in a portion of the elliptical trapping region above a portion of the second TT electrode sequence 250 in the zone 212A can be considered to be trapped in the zone 212A.

[0048] In various example embodiments, the plurality of zones can include a plurality of gating zones and a plurality of auxiliary zones. For example, the zones 212A and 212B can be gating zones 212A and 212B, and the zones 214A, 214B, 214C, and 214D can be auxiliary zones 214A, 214B, 214C, and 214D. In various example embodiments, each gating zone can be disposed between two auxiliary zones. In other words, when an atomic object is transported out of a gating zone 212 and before entering any other gating zone 212, the atomic object can immediately enter an auxiliary zone 214. In various example embodiments, each gating zone 212 can include a plurality of electrodes of the second TT electrode sequence 250 disposed between the RF electrodes. In example embodiments, each gating zone 212 includes five electrodes of the second TT electrode sequence 250 disposed between the RF electrodes. For example, as shown, the gating zone 212 can include TT electrodes 252A-E (TT electrodes 252B, 252C, 252D are not explicitly labeled to reduce visual clutter of the figure). In various example embodiments, the TT electrodes 252A-E can be individually controllable. For example, each TT electrode 252A-E can be connected to and / or configured to be in electrical communication with a different voltage driver and / or voltage source of the voltage source 55. Thus, it is clear that because the TT electrodes in the longitudinal gating region can not be arranged into subgroups and can be individually controllable, the TT electrodes of the second TT electrode sequence 250 in the longitudinal gating region 210 are different from the TT electrodes of the second TT electrode sequence 250 in the cross-arc-ring-line region 220. In various example embodiments, the TT electrodes 252A-E can each have a different circumferential width. For example, the TT electrodes 252A, 252E can be wide matching electrodes, while the TT electrodes 252B, 252C, and 252D can be narrow matching electrodes. FIG. 2C

[0049] ​In various example embodiments, each gating region 212 can include a plurality of outer gating electrodes 262 of outer TT electrode sequence 260 and a plurality of inner gating electrodes 272 of inner TT electrode sequence 270. For example, gating region 212A of outer TT electrode sequence 260 can include at least five TT electrodes, and gating region 212A of inner TT electrode sequence 260 can also include at least five TT electrodes (e.g., outer gating electrodes 262 as shown can be outer gating electrodes 262A-262E). Thus, each gating region 212 can include fifteen TT electrodes from three or more TT electrode sequences. In various example embodiments, the number of gating electrodes 262, 272 from outer TT electrode sequence 260 and inner TT electrode sequence 270 belonging to a gating region 212 can be determined, configured, and / or modified based at least in part on an action to be performed on an atomic object within the gating region 212 or a level of control needed to be performed on the electric potential in the gating region 212. In various embodiments, the electrodes within a gating region 212 can be individually controllable. For example, each outer electrode 262, inner electrode 272, and electrode 252 disposed between RF electrodes 230, 240 can be operated by different voltage drivers and / or voltage sources in voltage source 55.

[0050] In various example embodiments, each gating region 212 can be configured for an action to be performed on at least one atomic object within each gating region 212A. For example, elliptical atomic object trap 200 can be configured to trap at least one atomic object into a portion of an elliptical trapping region within gating region 212A, where gating region 212A can be configured to perform a particular action on the at least one atomic object. Example actions can include a splitting operation (e.g., partitioning two atomic objects in the same potential well into two different and / or separate potential wells), a combining operation (e.g., bringing two atomic objects into the same potential well), an exchange operation (e.g., switching the relative positions of two or more atomic objects within the atomic object trap), and / or can enable a controlled quantum state evolution of the at least one atomic object trapped within elliptical atomic object trap 200 and / or an arbitrary rearrangement of one or more trapped atomic objects. For example, the ability to arbitrarily arrange one or more trapped atomic objects allows for an arbitrary placement of pairs of atomic objects in each gating region 212, which allows for performing quantum gate operations. After performing such quantum gate operations, the atomic objects can be arbitrarily rearranged and transported outside of the gating region 212 to facilitate performing another operation in the same gating region 212.

[0051] The various actions that can be performed within the gate regions 212 can be caused by a manipulation source in the manipulation sources 60. In various example embodiments, one of the manipulation sources 60 can be configured to cause actions in different gate regions 212. For example, due to the relative proximity of the two regions, a manipulation source such as the laser beam 66B can be configured to cause an action to be performed in the gate region 212A and another action to be performed in the gate region 212B. In another example, a manipulation source can be configured to cause actions to be performed in two gate regions that are more spatially separated (e.g., on different ends of the longitudinal gate region 210). In various example embodiments, multiple manipulation sources are needed to cool one or more trapped atomic objects in the gate regions 212 to near their motional ground state before quantum gate operations can be performed on the one or more trapped atomic objects. In example embodiments, the manipulation sources used to cool the one or more trapped atomic objects can be different from the manipulation sources used to cause performance of the quantum gate operations. Still further, after the quantum gate operations have been performed, another number of manipulation sources can be used to generate state-dependent fluorescence from the trapped atomic objects. In example embodiments, the manipulation sources used to generate the state-dependent fluorescence can be different from the manipulation sources used to cause performance of the quantum gate operations and the manipulation sources used to cool the one or more trapped atomic objects.

[0052] In various example embodiments, each auxiliary region 214 can include a plurality of electrodes of a second TT electrode sequence 250 disposed between the RF electrodes. In example embodiments, each auxiliary region 214 includes three electrodes of the TT electrode sequence 250 disposed between the RF electrodes. For example, as shown, the auxiliary region 214 can include TT electrodes 254A-C (TT electrodes 254A, 254C are not explicitly labeled to reduce visual clutter in the figure). In various example embodiments, the TT electrodes 254A and 254C can be wide matching electrodes, while the TT electrode 254B can be a narrow matching electrode. Each auxiliary region 214 can also include a plurality of outer auxiliary electrodes 264 of an outer TT electrode sequence 260 and a plurality of inner auxiliary electrodes 274 of an inner TT electrode sequence 270. For example, the auxiliary region 214A can include one outer auxiliary electrode 264 from the outer TT electrode sequence 260 and one inner auxiliary electrode 274 from the inner TT electrode sequence 270. Thus, each auxiliary region can include five TT electrodes from three or more TT electrode sequences. Each TT electrode within an auxiliary region 214 can be individually controllable. For example, each of the TT electrodes 254A-C, outer auxiliary electrodes 264, and inner auxiliary electrodes 274 of the auxiliary region 214 can be connected to and / or configured to be in electrical communication with a different voltage driver of the voltage source 55. FIG. 2C

[0053] ​In various exemplary embodiments, each auxiliary region 214 may be configured for stabilizing and / or storing atomic objects therein, for separating at least one atomic object from a potential well having multiple atomic objects therein into different potential wells, and for transporting atomic objects through therein. In various exemplary embodiments, the auxiliary region 214 may be configured and / or designed to accommodate the storage and / or stabilization of one or more atomic objects during various atomic object transport steps.

[0054] In each gated region 212 or auxiliary region 214, an electric field generated by the voltage applied to each TT electrode in each region can trap at least one atomic object in a potential well above the upper surface of each region. Furthermore, these electric fields can be manipulated by controlling the applied voltage to facilitate the transport of the at least one atomic object to another region or to block further transport of the at least one atomic object. In various embodiments, to further aid in controlling transport between regions and / or stabilizing the trapping of the at least one atomic object in a particular region, the elliptical atomic object trap 200 can operate in a low-temperature chamber and / or vacuum chamber capable of cooling the atomic object trap to temperatures below 124 Kelvin (e.g., below 100 Kelvin, below 50 Kelvin, below 10 Kelvin, below 5 Kelvin, etc.).

[0055] and FIGS. 2A-2C Compared to the examples shown, various embodiments of the elliptical atomic object trap 200 may include more or fewer gate regions 212, and correspondingly more or fewer auxiliary regions 214. Various numbers of gate regions 212 and / or auxiliary regions 214, and various arrangements thereof, can be used in various embodiments, depending on the application. For example, returning to... FIG. 2A The exemplary embodiment shown includes an elliptical atomic object trap 200 comprising eight gated regions 212 and ten auxiliary regions 214.

[0056] Exemplary operations

[0057] FIG. 3 An exemplary method 300 for operating a quantum computer system including an atom object trap device and / or package 50 is illustrated. For example, method 300 can be performed to operate a quantum computer system 100 including an atom object trap device and / or package 50. Specifically, the atom object trap device and / or package 50 may include an elliptical atom object trap according to an exemplary embodiment provided in this disclosure, such as... FIGS. 2A-2C The elliptical atomic object trap 200 is shown. In various embodiments, the quantum computer system 100 may include means for performing and / or carrying out method 300. For example, method 300 may be performed at least in part by controller 30 and / or computing entity 10.

[0058] From block 302, a plurality of atomic objects can be loaded through a loading aperture of the atomic object trap. The loading aperture can be located in a cross-arc loop region of a trapping and / or transport (TT) electrode sequence, such as the cross-arc loop region of the second TT electrode sequence 250 shown in FIG. 2B That is, the TT electrode sequence can be generally elliptical in shape and disposed between two generally elliptical radio frequency (RF) electrodes, where each generally elliptical TT electrode sequence and RF electrode includes two generally parallel longitudinal regions and two cross-arc loop regions. For example, FIG. 2B The loading aperture 280 shown is an example of a loading aperture through which the plurality of atomic objects can be loaded at block 302. In various embodiments, the loading aperture 280 can be defined in the elliptical atomic object trap 200 in a location that minimizes perturbation of atomic objects trapped in the longitudinal gating region 210 or the loop region 220 (e.g., during a loading operation). For example, as shown in FIG. 2B The loading aperture 280 can be defined at an end of the loop region 220 to minimize perturbation of atomic objects trapped in the longitudinal gating region 210, in various example embodiments, the elliptical atomic object trap 200 can include one or more loading apertures 280, and the loading aperture 280 can be selected to load the plurality of atomic objects based on a relative distance from atomic objects trapped within the elliptical atomic object trap 200. After loading the plurality of atomic objects, the plurality of atomic objects can be trapped within an elliptical trapping region located above the elliptical atomic object trap 200. In particular, the plurality of atomic objects can be trapped in a portion of the elliptical trapping region located above the loading aperture 280 through which the plurality of atomic objects were loaded.

[0059] In various example embodiments, loading the plurality of atomic objects through the loading aperture can include using an effusive oven that can provide an atomic flux through the loading aperture. For example, the effusive oven can be part of the atomic object trap apparatus and / or package 50 and / or quantum computing system 100. The effusive oven can be operated to a particular temperature and / or temperature range that is configured to provide a predetermined atomic flux through the loading aperture. In various other embodiments, the quantum computing system 100 and / or atomic object trap apparatus and / or package 50 can include a device for providing an atomic flux through the loading aperture. In various example embodiments, loading the plurality of atomic objects through the loading aperture 280 further includes using a photoionization laser above the loading aperture to convert the provided atomic flux into ionized atomic objects. For example, the photoionization laser can be part of the atomic object trap apparatus and / or package 50 and / or quantum computing system 100. In various embodiments, the quantum computing system 100 and / or atomic object trap apparatus and / or package 50 can include various devices for converting a neutral atomic flux into ionized atomic objects. The provided atomic flux can be electrically neutral. In various example embodiments, the photoionization laser can be one of the manipulation sources 60.

[0060] Returning to FIG. 3 At block 304, the plurality of atomic objects can be cooled using a cooling laser beam. For example, the quantum computing system 100 and / or atomic object trap apparatus and / or package 50 can include a cooling laser beam or device for cooling the plurality of atomic objects. In various example embodiments, the cooling laser beam can be configured to operate at a particular frequency, wavelength, temperature, etc. to cool the plurality of atomic objects to a particular predetermined temperature, temperature range, kinetic energy, kinetic energy range, etc. For example, the controller 30 can operate the cooling laser beam with determined parameters to cool the plurality of atomic objects to a particular predetermined temperature, temperature range, kinetic energy, kinetic energy range, etc. In various example embodiments, the cooling laser beam can be one of the manipulation sources 60. For example, the plurality of atomic objects can be cooled sufficiently such that the atomic objects can be trapped, held, etc. within one or more potential wells generated by the RF and / or TT electrodes of the atomic object trap. In various example embodiments, the cooling laser beam can specifically be a Doppler cooling laser beam. In example embodiments, the interaction of the cooling laser beam with the atomic objects can cause the atomic objects to cool by fluorescing and / or emitting cold light (e.g., emitting one or more photons).

[0061] At block 306, an amount of fluorescence emitted by the plurality of atomic objects can be detected. Due to the cooling of the plurality of atomic objects (see block 304), an amount of fluorescence can be emitted. In particular, the amount of fluorescence emitted can depend on one or more of: the number of atomic objects that are cooled, the resulting temperature and / or kinetic energy of the plurality of atomic objects, the initial temperature and / or kinetic energy of the plurality of atomic objects (prior to cooling), and various parameters of the cooling laser beam or device used to cool the plurality of atomic objects. In various example embodiments, the quantum computing system 100 and / or the atomic object trap device and / or the package 50 can include a device for detecting the amount of fluorescence emitted by the plurality of atomic objects, such as a photodetector (e.g., a photodiode, a photomultiplier tube, etc.). In example embodiments, the controller 30 can be configured to operate such devices, such as photodetectors, and / or receive signals from such devices and control some components and / or parameters, such as apertures or image filters. In various example embodiments, the fluorescence emitted by the plurality of atomic objects can be Doppler fluorescence, in particular.

[0062] At block 308, the plurality of atomic objects can be transported from one portion of the elliptical trapping region to another portion of the elliptical trapping region. Prior to performing block 308, the plurality of atomic objects can be trapped and / or contained in a portion of the elliptical trapping region generally above and / or corresponding to the loading aperture 280. To transport the plurality of atomic objects to a different portion of the elliptical trapping region, the elliptical atomic object trap 200 can (e.g., by the controller 30) raise or lower the TT voltage across three or more TT electrode subgroups to facilitate transport of the plurality of atomic objects. For example, raising, lowering, or otherwise modifying the voltage waveform provided to the TT electrodes of the loop region can move the plurality of potential wells in which the plurality of atomic objects are trapped and / or contained. Transporting the plurality of atomic objects can cause at least one electric potential to be generated that is configured to cause loading of a second plurality of atomic objects through the loading aperture. In various example embodiments, the transport can depend on detecting an appropriate amount of fluorescence at block 306. For example, block 308 can not begin or be performed until a predetermined threshold of fluorescence is detected; that is, block 306 can be repeated indefinitely until such threshold criteria are reached and / or satisfied. In some embodiments, the method 300 can terminate if the predetermined threshold of fluorescence is not detected within a predetermined amount of time.

[0063] The plurality of atomic objects can be transported from one portion of the cross-arc loop region of the second TT electrode sequence to another portion of the cross-arc loop region of the second TT electrode sequence. Precisely, the plurality of atomic objects can be located above (e.g., in the positive z-direction) the second TT electrode sequence 250 in the elliptical trapping region (as described above in connection with block 306), and can be transported to a different portion of the cross-arc loop region of the second TT electrode sequence 250. In various example embodiments, the transport can be performed by raising or lowering the TT voltage across three or more TT electrode subgroups to facilitate transport of the plurality of atomic objects. For example, raising, lowering, or otherwise modifying the voltage waveform provided to the TT electrodes of the cross-arc loop region can move the plurality of potential wells in which the plurality of atomic objects are trapped and / or contained. Transporting the plurality of atomic objects can cause at least one electric potential to be generated that is configured to cause loading of a second plurality of atomic objects through the loading aperture. In various example embodiments, the transport can depend on detecting an appropriate amount of fluorescence at block 306. For example, block 308 can not begin or be performed until a predetermined threshold of fluorescence is detected; that is, block 306 can be repeated indefinitely until such threshold criteria are reached and / or satisfied. In some embodiments, the method 300 can terminate if the predetermined threshold of fluorescence is not detected within a predetermined amount of time. FIGS. 2A-2Cand can be transported from a position above a portion of the second TT electrode sequence 250 to another position above another portion of the second TT electrode sequence 250. In various exemplary embodiments, a portion of the TT electrode sequence is defined by n or more TT electrodes, where n is greater than 1, through which the plurality of atomic objects can be captured and transported back and forth. In exemplary embodiments, n is at least three. For example, as described in the context of FIG. 2B As described in the context of, the TT electrodes of the TT electrode sequence 250 can each belong to a different sub-group, allowing for the creation and movement of multiple potential wells. Thus, the plurality of atomic objects can be transported by operating the TT electrodes of the TT electrode sequence 250, or more specifically, operating each of the sub-groups of TT electrodes. In various exemplary embodiments, the across-arc-ring region operates like a “conveyor belt” such that the plurality of atomic objects can be transported to adjacent portions, each defined by n or more TT electrodes. In various exemplary embodiments, the plurality of atomic objects can be transported directly from the across-arc-ring region to a region within the longitudinal gating region 210 of the elliptical atomic object trap 200.

[0064] In various exemplary embodiments, automatically transporting the plurality of atomic objects causes a new potential to be created above the loading aperture, such that the second plurality of atomic objects can be loaded through the loading aperture. In various exemplary embodiments, the method 300 can be repeated multiple times because automatically transporting the plurality of atomic objects can enable the loading of the second plurality of atomic objects. The method 300 can be repeated until a desired number of atomic objects are loaded into the elliptical atomic object trap. In various exemplary embodiments, the second plurality of atomic objects can be of a different species than the first plurality of atomic objects loaded at block 302. For example, different atomic object species can be loaded to enable sympathetic laser cooling of some of the atomic objects captured in the longitudinal gating region 210.

[0065] Technical advantages

[0066] Various embodiments provide technical solutions to the technical problem of providing an atomic object trap device that provides sufficient atomic object position control, enables various atomic object transport functions (e.g., transporting atomic objects, separating two or more atomic objects in one potential well into different potential wells, swapping and / or separating two atomic objects (e.g., dividing two atomic objects in the same potential well into two different and / or separate potential wells), etc.), and enables manipulation of atomic objects within the atomic object trap via a manipulation source, while minimizing physical space on a chip and minimizing the amount of voltage waveforms (e.g., electrical leads) required to operate such an atomic object trap device. The novel elliptical atomic object trap architecture enables a relatively large number of trap regions (e.g., to thereby provide more qubits for a quantum computer system) with a relatively small amount of electrical signals required for operation and a relatively small physical area required on the atomic object trap chip. The large number of trap regions enables simultaneous capture of a large number of atomic objects, thereby providing a quantum computer system with a large number of qubits. FIG. 2A An example architecture is shown that is capable of simultaneously capturing 50 individual atomic objects. The presently described elliptical atomic object trap architecture improves microfabrication to a greater degree than microfabrication of existing atomic object traps.

[0067] Exemplary controller

[0068] In various embodiments, the atomic object trap device and / or package 50 is incorporated into a quantum computer 110. In various embodiments, the quantum computer 110 also includes a controller 30 configured to control various elements of the quantum computer 110. For example, the controller 30 can be configured to control the voltage source 55, a cryogenic system and / or a vacuum system that controls temperature and pressure within the cryogenic chamber and / or vacuum chamber 40, the manipulation source 60, and / or other systems that control environmental conditions (e.g., temperature, humidity, pressure, etc.) within the cryogenic chamber and / or vacuum chamber 40 and / or are configured to manipulate and / or cause controlled quantum state evolution of one or more atomic objects within the atomic object trap of the elliptical atomic object trap device and / or package 50.

[0069] As FIG. 4As shown, in various embodiments, controller 30 can include various controller elements, including a processing element 405, a memory 410, a driver controller element 415, a communication interface 420, an analog-to-digital converter element 425, etc. For example, processing element 405 can include a programmable logic device (CPLD), a microprocessor, a co-processing entity, an application-specific instruction-set processor (ASIP), an integrated circuit, an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a programmable logic array (PLA), a hardware accelerator, other processing devices and / or circuitry, etc. The term circuitry can refer to a completely hardware implementation or a combination of hardware and computer program product. In an example embodiment, processing element 405 of controller 30 includes and / or is in communication with a clock.

[0070] For example, memory 410 can include non-transitory memory such as volatile and / or non-volatile memory such as one or more of the following: a hard disk, a ROM, a PROM, an EPROM, an EEPROM, a flash memory, a MMC, a SD memory card, a memory stick, a CBRAM, a PRAM, a FeRAM, a RRAM, a SONOS, a racetrack memory, a RAM, a DRAM, a SRAM, a FPM DRAM, an EDO DRAM, a SDRAM, a DDR SDRAM, a DDR2 SDRAM, a DDR3 SDRAM, a RDRAM, a RIMM, a DIMM, a SIMM, a VRAM, a cache memory, a register memory, etc. In various embodiments, memory 410 can store qubit records corresponding to qubits of a quantum computer (e.g., stored in a qubit record data store, a qubit record database, a qubit record table, etc.), calibration tables, executable queues, computer program code (e.g., in one or more computer languages, a specialized controller language, etc.), etc. In an example embodiment, execution of at least a portion of the computer program code stored in memory 410 (e.g., by processing element 405) causes controller 30 to perform one or more steps, operations, processes, procedures, etc. described herein for tracking phases of atomic objects within an atomic system and causing phase adjustments of one or more manipulation sources and / or signals produced thereby.

[0071] In various embodiments, driver controller elements 415 can include one or more drivers and / or controller elements each configured to control one or more drivers. In various embodiments, driver controller elements 415 can include drivers and / or driver controllers. For example, a driver controller can be configured to cause one or more corresponding drivers to be operated in accordance with executable instructions, commands, etc. scheduled and executed by controller 30 (e.g., by processing elements 405). In various embodiments, driver controller elements 415 can enable controller 30 to operate manipulation source 60. In various embodiments, a driver can be a laser driver; a vacuum component driver; a driver for controlling the flow of current and / or voltage applied to TT, RF, and / or other electrodes used to hold and / or control the atomic object trapping potential of elliptical atomic object trap 200; a cryogenic and / or vacuum system component driver; etc. For example, a driver can control and / or include TT and / or RF voltage drivers and / or voltage sources that provide voltage and / or electrical signals to TT electrodes and / or RF electrodes via a plurality of leads. In various embodiments, controller 30 includes means for transmitting and / or receiving signals from one or more optical receiver components, such as cameras, MEM cameras, CCD cameras, photodetectors, photodiodes, photomultiplier tubes, etc. For example, controller 30 can include one or more analog-to-digital converter elements 425 configured to receive signals from one or more optical receiver components, calibration sensors, etc.

[0072] In various embodiments, controller 30 can include a communication interface 420 for interacting and / or communicating with computing entity 10. For example, controller 30 can include communication interface 420 for receiving executable instructions, command sets, etc. from computing entity 10 and providing outputs received from quantum computer 110 (e.g., from an optical collection system) and / or results of processing the outputs to computing entity 10. In various embodiments, computing entity 10 and controller 30 can communicate via a direct wired and / or wireless connection and / or one or more wired and / or wireless networks 20.

[0073] Exemplary computing entity

[0074] Referring now to FIG. 5 , an example computing entity 10 is shown. Example computing entities can be used in conjunction with embodiments of the present application. In various embodiments, computing entity 10 is configured to allow a user to provide input to quantum computer system 100 (e.g., via a user interface of computing entity 10 by the user) and receive, view, etc. output from quantum computer system 100.

[0075] As FIG. 5As shown, computing entity 10 can include an antenna 512, a transmitter 504 (e.g., radio), a receiver 506 (e.g., radio), and a processing element 508 that provides signals to and receives signals from the transmitter 504 and receiver 506, respectively. The signals provided to and received from the transmitter 704 and receiver 706, respectively, can include signaling information / data in accordance with the air interface standards of the applicable wireless system, such as standards for cellular systems, Bluetooth® wireless systems, IEEE 802.11 wireless systems, and / or IEEE 802.16 wireless systems. In this regard, the computing entity 10 can be capable of operating with one or more air interface standards, communication protocols, modulation types, and access types. For example, the computing entity 10 can be configured to use a wired data transmission protocol, such as fiber optic distributed data interface (FDDI), digital subscriber line (DSL), Ethernet, asynchronous transfer mode (ATM), frame relay, data over cable service interface specification (DOCSIS), or any other wired transmission protocol. Similarly, the computing entity 10 can be configured to communicate via a wireless external communication network using any of a variety of protocols, such as general packet radio service (GPRS), universal mobile telecommunications system (UMTS), code division multiple access 2000 (CDMA2000), CDMA2000 IX (lxRTT), wideband code division multiple access (WCDMA), global system for mobile communications (GSM), enhanced data rates for GSM evolution (EDGE), time division-synchronous code division multiple access (TD-SCDMA), long term evolution (LTE), evolved universal terrestrial radio access network (E-UTRAN), evolution-data optimized (EVDO), high-speed packet access (HSPA), high-speed downlink packet access (HSDPA), IEEE 802.11 (Wi-Fi), Wi-Fi Direct, 802.16 (WiMAX), ultra-wideband (UWB), infrared (IR) protocols, near-field communication (NFC) protocols, Wibree, Bluetooth protocols, wireless universal serial bus (USB) protocols, and / or any other wireless protocol. The computing entity 10 can use such protocols and standards to communicate using border gateway protocol (BGP), dynamic host configuration protocol (DHCP), domain name system (DNS), file transfer protocol (FTP), hypertext transfer protocol (HTTP), TLS / SSL / secure HTTP, internet message access protocol (IMAP), network time protocol (NTP), simple mail transfer protocol (SMTP), remote login, transport layer security (TLS), secure sockets layer (SSL), internet protocol (IP), transport control protocol (TCP), user datagram protocol (UDP), datagram congestion control protocol (DCCP), stream control transmission protocol (SCTP), hypertext markup language (HTML), and / or the like.

[0076] Via these communication standards and protocols, computing entity 10 can communicate with various other entities using concepts such as Unstructured Supplementary Service Data (USSD), Short Message Service (SMS), Multimedia Message Service (MMS), Dual-Tone Multi-Frequency Signaling (DTMF), and / or Subscriber Identity Module Dialer (SIM dialer). Computing entity 10 can also download changes, add-ons, and updates, e.g., to its firmware, software (e.g., including executable instructions, applications, program modules), and operating system.

[0077] According to one embodiment, computing entity 10 can include location-determining aspects, devices, modules, functional accessories, and / or similar words used herein interchangeably. For example, computing entity 10 can include outdoor positioning aspects, such as a positioning module adapted to obtain, for example, latitude, longitude, altitude, geocode, heading, bearing, direction, speed, UTC, date, and / or various other information / data. In one embodiment, the positioning module can obtain data, sometimes referred to as ephemeris data, by identifying the number of satellites in view and the relative positions of those satellites. These satellites can be a variety of different satellites, including LEO satellite systems, DOD satellite systems, the European Union Galileo positioning system, the Chinese BeiDou satellite navigation system, the Indian Regional Navigational Satellite System, and the like. Alternatively, location information / data can be determined by triangulating the position of user computing entity 10 in connection with various other systems, including cellular towers, Wi-Fi access points, and the like. Similarly, computing entity 10 can include indoor positioning aspects, such as a positioning module adapted to obtain, for example, latitude, longitude, altitude, geocode, heading, bearing, direction, speed, time, date, and / or various other information / data. Some of these indoor aspects can use various positioning or location technologies, including RFID tags, indoor beacons or transmitters, Wi-Fi access points, cellular towers, nearby computing devices (e.g., smartphones, laptops), and the like. For example, such technologies can include iBeacon, Gimbal Proximity Beacon, BLE transmitters, Near-Field Communication (NFC) transmitters, and the like. These indoor positioning aspects can be used in a variety of settings to determine the location of a person or thing to within inches or centimeters.

[0078] The computing entity 10 can also include user interface devices that include one or more user input / output interfaces (e.g., a display 516 and / or speakers / speaker drivers coupled to the processing element 508, and a touchscreen, keyboard, mouse, and / or microphone coupled to the processing element 508). For example, the user output interfaces can be configured to provide applications, browsers, user interfaces, interfaces, dashboards, screens, webpages, pages, and / or like words used herein interchangeably that are executed on the computing entity 10 and / or accessible via the computing entity to cause the display or aural presentation of user information / data, and for user interaction therewith via one or more user input interfaces. The user input interfaces can include any of a number of devices allowing the computing entity 10 to receive data, such as a keypad 518 (hard or soft), a touch display, a sound / voice or motion interface, a scanner, a reader, or other input devices. In embodiments including a keypad 518, the keypad 518 can include (or cause display of) the conventional numeric (0-9) and related keys (#, *), and other keys used in operating the computing entity 10, and can include a full set of alphabetic keys or a set of keys that, when activated, provide a full set of alphanumeric keys, for example. In addition to providing input, the user input interfaces can also be used to activate or deactivate certain functions, such as screen savers and / or sleep modes, for example. Through these input devices, the user computing entity 10 can collect information / data, user interactions / inputs, and the like.

[0079] The computing entity 10 can also include a volatile storage or memory 522 and / or a non-volatile storage or memory 524 that can be embedded and / or can be removable. For example, the non-volatile memory can be ROM, PROM, EPROM, EEPROM, flash memory, MMCs, SD memory cards, Memory Sticks, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, and the like. The volatile memory can be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and the like. The volatile and non-volatile storage or memory can store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, byte code, compiled code, interpreted code, machine code, executable instructions, and the like to implement the functionality of the computing entity 10.

[0080] Conclusions

[0081] Those skilled in the art who have the benefit of the teachings of the foregoing description and associated drawings will appreciate many modifications and other embodiments thereof. It is to be understood that the foregoing description is by way of example only, and is not intended to limit the application in any way, as described in the appended claims. Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.

Claims

1. An atom object trap device, the atom object trap device comprising: Two or more radio frequency (RF) electrodes concentrically formed in a generally elliptical shape, and Each of the three or more capture and / or transport TT electrode sequences is concentrically formed in a generally elliptical shape. The two or more RF electrodes and the three or more TT electrode sequences form two generally parallel longitudinal regions and two trans-arc loop regions, the two trans-arc loop regions connecting the two generally parallel longitudinal regions to each other. The two or more RF electrodes and the three or more TT electrode sequences define an atomic object trap of a generally elliptical shape. The two generally parallel longitudinal regions are arranged into multiple regions, including multiple gated regions and multiple auxiliary regions. Each of the multiple gated regions is configured to perform a gating operation on one or more atomic objects placed within it.

2. The atomic object trap device of claim 1, wherein each trans-arc loop region of at least one TT electrode sequence concentrically disposed between the two or more RF electrodes comprises a plurality of TT electrodes arranged in three or more TT electrode subgroups, and the TT electrodes of the subgroups in the three or more TT electrode subgroups are electrically connected to each other.

3. The atomic object trap device according to claim 2, wherein the TT electrodes of each TT electrode subgroup are electrically connected to each other.

4. The atomic object trap device according to claim 2, wherein each TT electrode subgroup is configured to be operated independently to perform at least one of the following operations: (a) generating a plurality of potential traps, or (b) moving potential traps.

5. The atomic object trap device of claim 4, wherein generating a plurality of potential traps and moving the potential traps is configured such that at least one atomic object within the defined atomic object trap is transported from a first longitudinal region of the RF electrode to a second longitudinal region of the RF electrode.

6. The atom object trap device of claim 5, wherein the at least one atom object comprises an ionic crystal, the ionic crystal comprising a qubit atom object and an inductively cooled (SC) atom object.

7. The atomic object trap device of claim 2, wherein each of the plurality of gated regions is disposed between two auxiliary regions, the gated region being configured for an action to be performed on at least one atomic object within the gated region, and the two auxiliary regions being configured for stabilizing the at least one atomic object during a transport operation of the at least one atomic object.

8. The atomic object trap device of claim 7, wherein the action comprises at least one of the following operations performed at least in part by the manipulation source: (a) a separation operation, (b) a combination operation, (c) a swap operation, or (d) a gate operation.

9. The atomic object trap device according to claim 1, wherein (a) the two or more RF electrodes are disposed between a first TT electrode sequence and a third TT electrode sequence, (b) the two or more RF electrodes form at least one elliptical gap, and (c) a second TT electrode sequence is disposed within the elliptical gap.

10. The atom object trap device of claim 1, wherein the atom object trap device is part of a captured ion quantum computer.

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